KR102718812B1 - Organic light emitting display device, method for manufacturing the same, and head mounted display including the same - Google Patents

Abstract

The present invention relates to an organic light-emitting display device capable of improving the lifespan of an organic light-emitting layer and preventing a non-light-emitting portion from being displayed in a grid shape, a method for manufacturing the same, and a head-mounted display including the same. An organic light-emitting display device according to one embodiment of the present invention comprises: a thin film transistor disposed on a lower substrate; a first planarizing film disposed on the thin film transistor; a contact hole penetrating the first planarizing film to expose a source or drain electrode of the thin film transistor; a first electrode electrically connected to the source or drain electrode of the thin film transistor; an organic light-emitting layer disposed on the first electrode; and a second electrode disposed on the organic light-emitting layer. A region where the first electrode, the organic light-emitting layer, and the second electrode are laminated is defined as a light-emitting portion that emits light. The contact hole overlaps the light-emitting portion.

Description

Organic light emitting display device, method for manufacturing the same, and head mounted display including the same {ORGANIC LIGHT EMITTING DISPLAY DEVICE, METHOD FOR MANUFACTURING THE SAME, AND HEAD MOUNTED DISPLAY INCLUDING THE SAME}

The present invention relates to an organic light emitting display device, a method for manufacturing the same, and a head-mounted display including the same.

As the information society develops, the demand for display devices for displaying images is increasing in various forms. Accordingly, various display devices such as liquid crystal displays (LCDs), plasma display panels (PDPs), and organic light emitting displays (OLEDs) are being utilized recently.

Among display devices, organic light-emitting display devices are self-luminous, and have superior viewing angles and contrast ratios compared to liquid crystal displays (LCDs). They do not require a separate backlight, so they can be made thin and light, and have the advantage of low power consumption. In addition, organic light-emitting display devices can be driven by low DC voltage, have a fast response speed, and have the advantage of low manufacturing costs.

An organic light emitting display device includes anode electrodes, a bank that partitions the anode electrodes, a hole transporting layer formed on the anode electrodes, an organic light emitting layer, an electron transporting layer, and a cathode electrode formed on the electron transporting layer. In this case, when a high potential voltage is applied to the anode electrode and a low potential voltage is applied to the cathode electrode, holes and electrons move to the organic light emitting layer through the hole transporting layer and the electron transporting layer, respectively, and combine with each other in the organic light emitting layer to emit light.

In an organic light-emitting display device, the region where the anode electrode, the organic light-emitting layer, and the cathode electrode are sequentially laminated becomes a light-emitting portion that emits light, and the region where the bank is formed becomes a non-light-emitting portion that does not emit light. The bank serves to define the light-emitting portion.

The anode electrode is connected to the source or drain electrode of the thin film transistor through the contact hole, and a high potential voltage is applied through the thin film transistor. Since the organic light-emitting layer is difficult to be uniformly deposited within the contact hole due to the step of the contact hole, it is not formed in the contact hole. In other words, the contact hole is covered by the bank.

Meanwhile, recently, small organic light-emitting display devices used in mobile devices, etc. have high resolutions, so the pixel size is getting smaller and smaller. However, contact holes are formed by a photo process, and due to the limitations of the photo process, they cannot be formed below a certain size. In other words, even if the pixel size gets smaller, there is a limit to how small the contact hole can get.

Since the contact hole is placed in the non-emission portion, when the pixel size decreases, the area ratio of the non-emission portion increases and the area ratio of the emission portion decreases. When the area ratio of the emission portion decreases, the emission brightness of the emission portion must be increased, so the lifespan of the organic light-emitting layer decreases.

In addition, head mounted displays including organic light-emitting diode displays have been developed recently. A head mounted display (HMD) is a glasses-type monitor device for virtual reality (VR) that is worn in the form of glasses or a helmet and focuses on a close distance in front of the user's eyes. However, in the case of a head mounted display, since the image of the organic light-emitting diode display is directly in front of the user's eyes, if the ratio of the area occupied by the non-luminous portion in the pixels is high, the non-luminous portion may be recognized in a grid shape as in Fig. 1.

The present invention provides an organic light-emitting display device capable of improving the lifespan of an organic light-emitting layer, a method for manufacturing the same, and a head-mounted display including the same.

In addition, the present invention provides an organic light-emitting display device capable of preventing a non-luminous portion from being displayed in a grid shape, a method for manufacturing the same, and a head-mounted display including the same.

An organic light-emitting display device according to one embodiment of the present invention comprises: a thin film transistor disposed on a lower substrate; a first planarizing film disposed on the thin film transistor; a contact hole penetrating the first planarizing film to expose a source or drain electrode of the thin film transistor; a first electrode electrically connected to the source or drain electrode of the thin film transistor; an organic light-emitting layer disposed on the first electrode; and a second electrode disposed on the organic light-emitting layer. A region where the first electrode, the organic light-emitting layer, and the second electrode are laminated is defined as a light-emitting portion that emits light. The contact hole overlaps the light-emitting portion.

A method for manufacturing an organic light-emitting display device according to one embodiment of the present invention includes the steps of forming a thin film transistor on a first substrate, forming a first planarization film on the thin film transistor, forming a contact hole penetrating the first planarization film to expose a source or drain electrode of the thin film transistor, forming an auxiliary electrode connected to the source or drain electrode of the thin film transistor through the contact hole, forming a second planarization film filling the contact hole on the auxiliary electrode, forming a first electrode connected to the auxiliary electrode on the second planarization film, forming an organic light-emitting layer on the first electrode, and forming a second electrode on the organic light-emitting layer.

In an embodiment of the present invention, a contact hole is formed to overlap with a light-emitting portion, and a second planarizing film is filled in the contact hole to planarize the step of the contact hole. Accordingly, in an embodiment of the present invention, an organic light-emitting layer can be formed with a uniform thickness on the second planarizing film, so that even if the contact hole is formed to overlap with the light-emitting portion, light can be uniformly output from the light-emitting portion.

In addition, since the embodiment of the present invention can form the contact hole to overlap with the light-emitting portion, the area of the light-emitting portion can be made independent of the area of the contact hole. As a result, since the embodiment of the present invention can design the area of the light-emitting portion without being restricted by the area of the contact hole, the area of the light-emitting portion can be maximized, thereby improving the lifespan of the organic light-emitting layer.

In addition, the embodiment of the present invention can minimize the area of the non-luminous portion by maximizing the area of the luminous portion. Accordingly, when the embodiment of the present invention is applied to a head-mounted display, the non-luminous portion can be prevented from being displayed in a grid shape.

In addition, the embodiment of the present invention forms the bank so as to cover the inclined portion of the second flattening film. Accordingly, the embodiment of the present invention can prevent the charge generation layer of the first electrode or the organic light-emitting layer and the second electrode from being short-circuited by forming the organic light-emitting layer thinly on the inclined portion of the second flattening film.

Furthermore, in the embodiment of the present invention, when pixels are formed in a square shape, the area of the light-emitting portion can be expanded not only in one direction (up and down direction) but also in the other direction (left and right direction) compared to when pixels are formed in a rectangular shape, so that the area can be further expanded. As a result, the embodiment of the present invention can not only improve the lifespan of the organic light-emitting layer, but also minimize the area of the non-light-emitting portion.

Figure 1 is an example drawing showing a grid pattern of an image displayed by a conventional head-mounted display.
FIG. 2 is a perspective view showing an organic light-emitting display device according to one embodiment of the present invention.
FIG. 3 is a plan view showing the first substrate, gate driver, source driver IC, flexible film, circuit board, and timing controller of FIG. 2.
Figure 4 is a plan view showing in detail an example of pixels in a display area.
Figure 5 is a cross-sectional view showing an example of I-I' of Figure 4.
FIG. 6 is a flowchart showing a method for manufacturing an organic light-emitting display device according to one embodiment of the present invention.
FIGS. 7A to 7G are cross-sectional views taken along line I-I' for explaining a method for manufacturing an organic light-emitting display device according to one embodiment of the present invention.
FIGS. 8A and 8B are cross-sectional views I-I' showing step S105 of FIG. 6 in detail.
Fig. 9 is a cross-sectional view showing another example of I-I' of Fig. 4.
FIG. 10 is a flowchart showing a method for manufacturing an organic light-emitting display device according to another embodiment of the present invention.
FIGS. 11A to 11C are cross-sectional views taken along line I-I' for explaining a method for manufacturing an organic light-emitting display device according to another embodiment of the present invention.
Figure 12 is a plan view detailing another example of pixels in the display area.
Fig. 13 is a cross-sectional view showing an example of Ⅱ-Ⅱ' of Fig. 12.
FIG. 14 is a flowchart showing a method for manufacturing an organic light-emitting display device according to another embodiment of the present invention.
FIGS. 15a and 15b are cross-sectional views of II-II' for explaining a method for manufacturing an organic light-emitting display device according to another embodiment of the present invention.
Fig. 16 is a cross-sectional view showing another example of Ⅱ-Ⅱ' of Fig. 12.
FIG. 17 is a flowchart showing a method for manufacturing an organic light-emitting display device according to another embodiment of the present invention.
FIGS. 18a to 18c are cross-sectional views of II-II' for explaining a method for manufacturing an organic light-emitting display device according to another embodiment of the present invention.
Figure 19 is a plan view detailing another example of pixels in the display area.
Figure 20 is a plan view detailing another example of pixels in the display area.
FIGS. 21A and 21B are exemplary drawings showing a head-mounted display according to an embodiment of the present invention.
FIG. 22 is an exemplary drawing showing an example of the display storage case of FIGS. 21a and 21b.
FIG. 23 is an exemplary drawing showing another example of the display storage case of FIGS. 21a and 21b.
FIG. 24 is an exemplary drawing showing a grid pattern of an image displayed by a head-mounted display according to an embodiment of the present invention.

The advantages and features of the present invention, and the method for achieving them, will become clear with reference to the embodiments described in detail below together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and these embodiments are provided only to make the disclosure of the present invention complete and to fully inform a person having ordinary skill in the art to which the present invention belongs of the scope of the invention, and the present invention is defined only by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining embodiments of the present invention are exemplary, and the present invention is not limited to the matters illustrated. The same reference numerals refer to the same components throughout the specification. In addition, in explaining the present invention, if it is determined that a detailed description of a related known technology may unnecessarily obscure the gist of the present invention, the detailed description will be omitted.

In the present specification, when the words "includes," "has," and "consists of," are used, other parts may be added unless "only" is used. When a component is expressed in the singular, it includes the plural unless there is a special explicit description.

When interpreting a component, it is interpreted as including the error range even if there is no separate explicit description.

When describing a positional relationship, for example, when the positional relationship between two parts is described as 'on ~', 'upper ~', 'lower ~', 'next to ~', etc., one or more other parts may be located between the two parts, unless 'right' or 'directly' is used.

When describing a temporal relationship, for example, when describing a temporal relationship using phrases such as 'after', 'following', 'next to', or 'before', it can also include cases where there is no continuity, as long as 'right away' or 'directly' is not used.

Although the terms first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Accordingly, a first component referred to below may also be a second component within the technical concept of the present invention.

“X-axis direction”, “Y-axis direction” and “Z-axis direction” should not be interpreted as merely geometric relationships in which the relationship between them is perpendicular to each other, but may mean a wider directionality within the range in which the configuration of the present invention can function functionally.

The term "at least one" should be understood to include all combinations that can be represented from one or more of the associated items. For example, the meaning of "at least one of the first, second, and third items" can mean not only each of the first, second, or third items, but also all combinations of items that can be represented from two or more of the first, second, and third items.

The individual features of the various embodiments of the present invention may be partially or wholly combined or combined with each other, and may be technically linked and driven in various ways, and each embodiment may be implemented independently of each other or may be implemented together in a related relationship.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

FIG. 2 is a perspective view showing an organic light-emitting display device according to one embodiment of the present invention. FIG. 3 is a plan view showing a first substrate, a gate driver, a source driver IC, a flexible film, a circuit board, and a timing controller of FIG. 2.

Referring to FIGS. 2 and 3, an organic light-emitting display device (100) according to an embodiment of the present invention includes a display panel (110), a gate driver (120), a source driver integrated circuit (hereinafter referred to as “IC”) (130), a flexible film (140), a circuit board (150), and a timing control unit (160).

The display panel (110) includes a first substrate (111) and a second substrate (112). The second substrate (112) may be a sealing substrate. The first substrate (111) and the second substrate (112) may be plastic or glass.

Gate lines, data lines, and pixels (P) are formed on one side of the first substrate (111) facing the second substrate (112). The pixels (P) are provided in an area defined by the intersection structure of the gate lines and data lines.

Each of the pixels (P) may include an organic light-emitting element having a thin film transistor, a first electrode, an organic light-emitting layer, and a second electrode. Each of the pixels (P) supplies a predetermined current to the organic light-emitting element according to a data voltage of a data line when a gate signal is input from a gate line using the thin film transistor. Accordingly, the organic light-emitting element of each of the pixels (P) can emit light with a predetermined brightness according to a predetermined current. A detailed description of each of the pixels (P) will be described later with reference to FIG. 4.

The display panel (110) can be divided into a display area (DA) where pixels are formed to display an image, as shown in FIG. 3, and a non-display area (NDA) where no image is displayed. Gate lines, data lines, and pixels (P) can be formed in the display area (DA). Gate driving units (120) and pads can be formed in the non-display area (NDA).

The gate driver (120) supplies gate signals to the gate lines according to the gate control signal input from the timing controller (160). The gate driver (120) may be formed in a non-display area (DA) outside one side or both sides of the display area (DA) of the display panel (110) in a GIP (gate driver in panel) manner. Alternatively, the gate driver (120) may be manufactured as a driving chip, mounted on a flexible film, and attached to a non-display area (DA) outside one side or both sides of the display area (DA) of the display panel (110) in a TAB (tape automated bonding) manner.

The source drive IC (130) receives digital video data and a source control signal from the timing control unit (160). The source drive IC (130) converts digital video data into analog data voltages according to the source control signal and supplies the same to data lines. When the source drive IC (130) is manufactured as a driving chip, it can be mounted on a flexible film (140) in a COF (chip on film) or COP (chip on plastic) manner.

Pads such as data pads may be formed in the non-display area (NDA) of the display panel (110). Wires connecting the pads and the source drive IC (130) and wires connecting the pads and the wires of the circuit board (150) may be formed in the flexible film (140). The flexible film (140) is attached onto the pads using an anisotropic conducting film, thereby connecting the pads and the wires of the flexible film (140).

The circuit board (150) may be attached to the flexible films (140). The circuit board (150) may have a plurality of circuits implemented with driving chips mounted thereon. For example, a timing control unit (160) may be mounted on the circuit board (150). The circuit board (150) may be a printed circuit board or a flexible printed circuit board.

The timing control unit (160) receives digital video data and timing signals from an external system board through a cable of the circuit board (150). The timing control unit (60) generates a gate control signal for controlling the operation timing of the gate driver (120) and a source control signal for controlling the source drive ICs (130) based on the timing signal. The timing control unit (160) supplies the gate control signal to the gate driver (120) and the source control signal to the source drive ICs (130).

Fig. 4 is a plan view showing in detail an example of pixels in a display area. Fig. 5 is a cross-sectional view showing I-I' of Fig. 4.

Referring to FIGS. 4 and 5, a buffer film (210) is formed on one surface of a first substrate (111) facing a second substrate (112). The buffer film (210) is formed on one surface of the first substrate (111) to protect the thin film transistors (220) and the organic light-emitting elements (280) from moisture penetrating through the first substrate (111) which is vulnerable to moisture permeation. The buffer film (210) may be formed of a plurality of inorganic films that are alternately laminated. For example, the buffer film (210) may be formed as a multi-film in which one or more inorganic films of a silicon oxide film (SiO _x ), a silicon nitride film (SiN _x ), and SiON are alternately laminated. The buffer film (210) may be omitted.

Thin film transistors (220) are formed on the buffer film (210). Each of the thin film transistors (220) includes an active layer (221), a gate electrode (222), a source electrode (223), and a drain electrode (224). In FIG. 5, the thin film transistors (220) are exemplified as being formed in a top gate method in which the gate electrode (222) is positioned above the active layer (221), but it should be noted that the present invention is not limited thereto. That is, the thin film transistors (220) may be formed in a bottom gate method in which the gate electrode (222) is positioned below the active layer (221), or in a double gate method in which the gate electrode (222) is positioned above and below the active layer (221).

An active layer (221) is formed on the buffer film (210). The active layer (221) may be formed of a silicon-based semiconductor material or an oxide-based semiconductor material. A light-blocking layer may be formed between the buffer film (210) and the active layer (221) to block external light incident on the active layer (221).

A gate insulating film (220) may be formed on the active layer (221). The gate insulating film (230) may be formed of an inorganic film, for example, a silicon oxide film (SiO _x ), a silicon nitride film (SiN _x ), or a multi-film thereof.

A gate electrode (222) and a gate line may be formed on the gate insulating film (220). The gate electrode (222) and the gate line may be formed as a single layer or multiple layers made of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

An interlayer insulating film (240) may be formed on the gate electrode (222) and the gate line. The interlayer insulating film (240) may be formed of an inorganic film, for example, a silicon oxide film (SiO _x ), a silicon nitride film (SiN _x ), or a multi-film thereof.

A source electrode (223), a drain electrode (224), and a data line may be formed on the interlayer insulating film (240). Each of the source electrode (223) and the drain electrode (224) may be connected to the active layer (221) through a contact hole (CT1) penetrating the gate insulating film (230) and the interlayer insulating film (240). The source electrode (223), the drain electrode (224), and the data line may be formed as a single layer or multiple layers made of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

A protective film (250) for insulating the thin film transistor (220) may be formed on the source electrode (223), the drain electrode (224), and the data line. The protective film (250) may be formed of an inorganic film, for example, a silicon oxide film (SiO _x ), a silicon nitride film (SiN _x ), or a multi-film thereof.

A first planarization film (260) may be formed on the protective film (250) to level the step caused by the thin film transistor (220). The first planarization film (260) may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

A contact hole (CNT) is formed in the protective film (250) and the first planarization film (260) to expose the drain electrode (224) of the thin film transistor (220) by penetrating the protective film (250) and the first planarization film (260). The contact hole (CNT) is formed to overlap with the light-emitting portion (EA) as shown in FIG. 4. In FIG. 4, a part of the contact hole (CNT) overlaps with the light-emitting portion (EA), but the present invention is not limited thereto, and the entire contact hole (CNT) may overlap with the light-emitting portion (EA).

An auxiliary electrode (281a) is formed on the first flattening film (260). The auxiliary electrode (281a) can be connected to the drain electrode (224) of the thin film transistor through a contact hole (CNT). In Fig. 5, the auxiliary electrode (281a) is exemplified as being connected to the drain electrode (224) of the thin film transistor (220), but it may also be connected to the source electrode (223) of the thin film transistor (220).

A second planarization film (270) may be formed on the auxiliary electrode (281a). The second planarization film (270) is filled in the contact hole (CNT) to planarize the step caused by the contact hole (CNT). The second planarization film (270) may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

The second planarization film (270) is formed to cover the contact hole (CNT) in order to fill the step of the contact hole (CNT). Accordingly, the second planarization film (270) may be formed wider than the contact hole (CNT) as shown in FIG. 4. However, the embodiment of the present invention is not limited thereto. That is, the second planarization film (270) may be formed to be the same width as or narrower than the contact hole (CNT).

In addition, the second planarization film (270) may be formed wider than the light-emitting portion (EA) as shown in FIG. 4. In this case, since the first electrode (281b), the organic light-emitting layer (282), and the second electrode (283) in the light-emitting portion (EA) are formed on the second planarization film (270), the organic light-emitting layer (282) in the light-emitting portion (EA) may be formed with a uniform thickness, so that the light-emitting portion (EA) may output uniform light.

Due to the characteristics of the manufacturing process of the second flattening film (270), the thickness (t2) of the second flattening film (270) may be formed thicker than the thickness (t1) of the first flattening film (260). A detailed explanation of the reason why the thickness (t2) of the second flattening film (270) is formed thicker than the thickness (t1) of the first flattening film (260) will be described later with reference to FIGS. 8a and 8b.

An organic light-emitting element (280) is formed on the second flattening film (270). The organic light-emitting element (280) includes a first electrode (281b), an organic light-emitting layer (282), and a second electrode (283). An area where the first electrode (281b), the organic light-emitting layer (282), and the second electrode (283) are laminated is defined as a light-emitting portion (EA). The first electrode (281b) may be an anode electrode, and the second electrode (283) may be a cathode electrode.

The first electrode (281b) may be formed on the second planarization film (270). As shown in FIG. 4, the first electrode (281b) may be formed wider than the auxiliary electrode (281a), and thus, the auxiliary electrode (281a) that is not covered by the second planarization film (270) may be connected to the first electrode (281b). In FIG. 4, the first electrode (281b) and the auxiliary electrode (281a) are connected to each other on the outside of both side surfaces of the contact hole (CNT), but the present invention is not limited thereto. That is, the first electrode (281b) and the auxiliary electrode (281a) may be connected to each other on the outside of at least one side surface of the contact hole (CNT).

The auxiliary electrode (281a) and the first electrode (281b) may be made of the same material. Alternatively, each of the auxiliary electrode (281a) and the first electrode (281b) may be made of one metal layer or two or more metal layers.

Each of the auxiliary electrode (281a) and the first electrode (281b) may be formed of a transparent metal material or an opaque metal material. The transparent metal material may be a TCO (Transparent Conductive Material) such as ITO or IZO, or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). The opaque metal material may be aluminum (Al), silver (Ag), molybdenum (Mo), a laminated structure of molybdenum and titanium (Mo/Ti), copper (Cu), a laminated structure of aluminum and titanium (Ti/Al/Ti), a laminated structure of aluminum and ITO (ITO/Al/ITO), an APC alloy, or a laminated structure of an APC alloy and ITO (ITO/APC/ITO). The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

For example, the first electrode (281b) may be formed of a laminated structure of two or more layers including a highly reflective metal material, such as aluminum (Al) or silver (Ag), and a transparent metal material, and the auxiliary electrode (281a) may be formed of a low-resistance metal material, such as molybdenum (Mo), a laminated structure of molybdenum and titanium (Mo/Ti), copper (Cu), or a laminated structure of aluminum and titanium (Ti/Al/Ti). In addition, in order to form a reflection area as wide as possible, the first electrode (281b) may be formed of a transparent metal material, and the auxiliary electrode (281a) may be formed of a highly reflective metal material, such as aluminum (Al) or silver (Ag).

The bank (284) may be formed to cover the edge of the first electrode (281b) on the first planarization film (260) to define the light-emitting portion (EA). The area where the bank (284) is formed does not emit light and thus may be defined as a non-light-emitting portion. In other words, it serves to define the light-emitting portion (EA). The thickness (t3) of the bank (284) may be formed to be thicker than the distance (t4) between the first planarization film (260) and the organic light-emitting layer (282).

Meanwhile, the second planarization film (270) is formed convexly. In addition, since the organic light-emitting layer (282) is formed by a method such as an evaporation deposition method that does not have good step coverage characteristics, it may be formed thinly in the inclined portion of the second planarization film (270). As a result, the charge generation layer of the first electrode (281a) or the organic light-emitting layer (282) and the second electrode (283) may be short-circuited in the inclined portion of the second planarization film (270). Step coverage refers to the formation of a film deposited by a predetermined deposition method so as to be connected without being interrupted even in a portion where a step is formed. However, in the embodiment of the present invention, since the bank (284) is formed to cover the inclined portion of the second flattening film (270), it is possible to prevent the charge generation layer of the first electrode (281a) or the organic light-emitting layer (282) and the second electrode (283) from being short-circuited at the inclined portion of the second flattening film (270).

An organic light-emitting layer (282) is formed on the first electrode (281b) and the bank (284). The organic light-emitting layer (282) may include a hole transporting layer, a light emitting layer, and an electron transporting layer. In this case, when voltage is applied to the first electrode (281b) and the second electrode (283), holes and electrons move to the light-emitting layer through the hole transporting layer and the electron transporting layer, respectively, and combine with each other in the light-emitting layer to emit light.

The organic light-emitting layer (282) may be a white light-emitting layer that emits white light. In this case, the organic light-emitting layer (282) may be formed to cover the first electrode (281b) and the bank (284) as shown in FIG. 5. In addition, in this case, the color filters (321, 322, 323) may be formed to overlap the light-emitting portion (EA).

Alternatively, the organic light-emitting layer (282) may include a red light-emitting layer that emits red light, a green light-emitting layer that emits green light, and a blue light-emitting layer that emits blue light. In this case, the light-emitting portion (EA) may be divided into a red light-emitting portion including a red light-emitting layer, a green light-emitting portion including a green light-emitting layer, and a blue light-emitting portion including a blue light-emitting layer, and each of the red light-emitting portion, the green light-emitting portion, and the blue light-emitting portion may not include a color filter. The red light-emitting layer may be formed on the first electrode (281b) of the red light-emitting portion, the green light-emitting layer may be formed on the first electrode (281b) of the green light-emitting portion, and the blue light-emitting layer may be formed on the first electrode (281b) of the blue light-emitting portion.

The second electrode (283) is formed on the organic light-emitting layer (282). The second electrode (283) may be formed of a transparent metal material (TCO, Transparent Conductive Material) such as ITO or IZO that can transmit light, or a semi-transmissive metal material (Semi-transmissive Conductive Material) such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). A capping layer may be formed on the second electrode (283).

A sealing film (290) is formed on the second electrode (283). The sealing film (290) serves to prevent oxygen or moisture from penetrating into the organic light-emitting layer (282) and the second electrode (283). To this end, the sealing film (290) may include at least one inorganic film and at least one organic film. In FIG. 5, the sealing film (290) is exemplified as including a first inorganic film (291), an organic film (292), and a second inorganic film (293), but is not limited thereto.

The first inorganic film (291) is formed on the second electrode (283) to cover the second electrode (283). The organic film (292) is formed on the first inorganic film (291) to cover the first inorganic film (291). The organic film (292) is preferably formed to a sufficient thickness to prevent foreign substances (particles) from penetrating the first inorganic film (291) and entering the organic light-emitting layer (282) and the second electrode (283). The second inorganic film (293) is formed on the organic film (292) to cover the organic film (292).

Each of the first and second inorganic films can be formed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide or titanium oxide. The organic film can be formed of acrylic resin, epoxy resin, phenolic resin, polyamide resin or polyimide resin.

Color filters (321, 322, 323) and a black matrix (310) may be formed on a second substrate (112) facing the first substrate (111). A red color filter (323) may be formed on a red light-emitting portion, a blue color filter (322) may be formed on a blue light-emitting portion, and a green color filter (321) may be formed on a green light-emitting portion. A black matrix (BM) may be placed between the color filters (321, 322, 323). When the organic light-emitting layer (282) includes a red light-emitting layer that emits red light, a green light-emitting layer that emits green light, and a blue light-emitting layer that emits blue light, the color filters (321, 322, 323) and the black matrix (310) may be omitted.

The sealing film (290) of the first substrate (111) and the color filters (321, 322, 323) of the second substrate (112) are bonded using an adhesive layer (330), thereby allowing the first substrate (111) and the second substrate (112) to be bonded together. The adhesive layer (330) may be a transparent adhesive resin.

As described above, the embodiment of the present invention forms the contact hole (CNT) to overlap with the light-emitting portion (EA), and fills the contact hole (CNT) with a second planarization film (270) to planarize the step of the contact hole (CNT). Accordingly, the embodiment of the present invention can form an organic light-emitting layer with a uniform thickness on the second planarization film (270), so that even if the contact hole (CNT) is formed to overlap with the light-emitting portion (EA), light can be uniformly output from the light-emitting portion (EA).

In addition, since the organic light-emitting element deteriorates over time, it is very important to extend the life of the organic light-emitting element in the organic light-emitting display device. When the area of the light-emitting portion where the organic light-emitting layer emits light is expanded, the life of the organic light-emitting element can be extended. Since the embodiment of the present invention can form the contact hole (CNT) to overlap the light-emitting portion (EA), the area of the light-emitting portion (EA) can be made independent of the area of the contact hole (CNT). As a result, since the embodiment of the present invention can design the area of the light-emitting portion (EA) without being restricted by the area of the contact hole (CNT), the area of the light-emitting portion (EA) can be maximized, thereby improving the life of the organic light-emitting layer.

In addition, the embodiment of the present invention can minimize the area of the non-luminous portion by maximizing the area of the light-emitting portion (EA). Accordingly, when the embodiment of the present invention is applied to a head-mounted display, the non-luminous portion can be prevented from being displayed in a grid shape.

Fig. 6 is a flow chart showing a method for manufacturing an organic light-emitting display device according to one embodiment of the present invention. Figs. 7a to 7g are cross-sectional views taken along line I-I' for explaining a method for manufacturing an organic light-emitting display device according to one embodiment of the present invention.

The cross-sectional views illustrated in FIGS. 7a to 7g relate to the manufacturing method of the organic light-emitting display device illustrated in FIG. 5 described above, and therefore, the same reference numerals are assigned to the same components. Hereinafter, a manufacturing method of an organic light-emitting display device according to an embodiment of the present invention will be described in detail by connecting FIG. 6 and FIGS. 7a to 7g.

First, a thin film transistor (220), a protective film (250), and a first planarization film (260) are formed on a first substrate (111) as shown in Fig. 7a.

Before forming the thin film transistor (220), a buffer film (210) can be formed on the first substrate (111) to protect against moisture penetrating through the first substrate (111). The buffer film (210) is intended to protect the thin film transistor (220) and the organic light-emitting element (260) from moisture penetrating through the first substrate (111) which is vulnerable to moisture permeation, and can be formed of a plurality of inorganic films that are alternately laminated. For example, the buffer film (210) can be formed as a multi-film in which one or more inorganic films of a silicon oxide film (SiO _x ), a silicon nitride film (SiN _x ), and SiON are alternately laminated. The buffer film (210) can be formed using a CVD (Chemical Vapor Deposition) method.

Then, an active layer (221) of a thin film transistor is formed on the buffer film. Specifically, an active metal layer is formed on the entire surface of the buffer film (210) using a sputtering method or a MOCVD method (Metal Organic Chemical Vapor Deposition). Then, the active metal layer is patterned using a mask process using a photoresist pattern to form the active layer (221). The active layer (221) can be formed of a silicon-based semiconductor material or an oxide-based semiconductor material.

Then, a gate insulating film (210) is formed on the active layer (221). The gate insulating film (210) may be formed of an inorganic film, for example, a silicon oxide film (SiO _x ), a silicon nitride film (SiN _x ), or a multi-film thereof. The gate insulating film (210) may be formed using a CVD method.

Then, the gate electrode (222) of the thin film transistor (220) and the gate line are formed on the gate insulating film (210). Specifically, a first metal layer is formed on the entire surface of the gate insulating film (210) using a sputtering method or a MOCVD method. Then, the first metal layer is patterned using a mask process using a photoresist pattern to form the gate electrode (222) and the gate line. The gate electrode (222) and the gate line can be formed as a single layer or multiple layers made of one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

Then, an interlayer insulating film (230) is formed on the gate electrode (222). The interlayer insulating film (230) can be formed of an inorganic film, for example, a silicon oxide film (SiO _x ), a silicon nitride film (SiN _x ), or a multi-film thereof. The interlayer insulating film (230) can be formed using a CVD method.

Then, contact holes (C1) are formed to expose the active layer (221) by penetrating the gate insulating film (210) and the interlayer insulating film (230).

Then, the source and drain electrodes (223, 224) of the thin film transistor (220) and the data line are formed on the interlayer insulating film (230). Specifically, a second metal layer is formed on the entire surface of the interlayer insulating film (230) using a sputtering method or a MOCVD method. Then, the second metal layer is patterned using a mask process using a photoresist pattern to form the source and drain electrodes (223, 224) and the data line. Each of the source and drain electrodes (223, 224) can be connected to the active layer (221) through a contact hole (CT1) penetrating the gate insulating film (210) and the interlayer insulating film (230). The source and drain electrodes (223, 224) and the data line may be formed as a single layer or multiple layers made of one or an alloy of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu).

Then, a protective film (240) is formed on the source and drain electrodes (223, 224) of the thin film transistor (220). The protective film (240) may be formed of an inorganic film, for example, a silicon oxide film (SiO _x ), a silicon nitride film (SiN _x ), or a multi-film thereof. The protective film (240) may be formed using a CVD method.

Then, a planarization film (250) is formed on the protective film (240) to planarize the step caused by the thin film transistor (220). The planarization film (250) can be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. (S101 of FIG. 6)

Second, as shown in Fig. 7b, a contact hole (CNT) is formed to expose the source or drain electrode (224) of the thin film transistor (220) by penetrating the protective film (250) and the first planarization film (260). (S102 of Fig. 6)

Thirdly, an auxiliary electrode (281a) is formed on the first flattening film (260) as shown in Fig. 7c. The auxiliary electrode (281a) can be connected to the source or drain electrode (224) of the thin film transistor (220) through a contact hole (CNT).

Specifically, a third metal layer is formed on the entire surface of the first planarization film (260) using a sputtering method or MOCVD method, etc. Then, the third metal layer is patterned using a mask process using a photoresist pattern to form an auxiliary electrode (281a).

The auxiliary electrode (281a) may be formed of a transparent metal material or an opaque metal material. The transparent metal material may be a TCO (Transparent Conductive Material) such as ITO, IZO, or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). The opaque metal material may be aluminum (Al), silver (Ag), molybdenum (Mo), a laminated structure of molybdenum and titanium (Mo/Ti), copper (Cu), a laminated structure of aluminum and titanium (Ti/Al/Ti), a laminated structure of aluminum and ITO (ITO/Al/ITO), an APC alloy, or a laminated structure of an APC alloy and ITO (ITO/APC/ITO). The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu). (S103 of FIG. 6)

Fourth, a second planarization film (270) is formed on the auxiliary electrode (281a) as shown in Fig. 7d. The second planarization film (270) is filled in the contact hole (CNT) to level the step caused by the contact hole (CNT).

Specifically, as shown in FIG. 8a, an organic material (270') is coated on the first planarization film (260) and the auxiliary electrode (281a). The organic material (270') may be an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. The organic material (270') may be formed on the first planarization film (260) and the auxiliary electrode (281a) using slit coating, spin coating, or evaporation. The organic material (270') is formed so as to fill the contact hole (CNT).

Then, as shown in Fig. 8b, a mask (M) is finally placed on the contact hole (CNT), and then the organic material (270') formed in the area where the mask (M) is not placed is developed using a photolithography process. As a result, the second planarization film (270) can be formed to cover the contact hole (CNT).

As described above, when the second planarization film (270) is formed using a photolithography process as shown in FIGS. 8A and 8B, the second planarization film (270) may be formed to not only fill the contact hole (CNT), but also cover a portion of the auxiliary electrode (281a) formed on the first planarization film (260). Accordingly, when the second planarization film (270) is formed using a photolithography process as shown in FIGS. 8A and 8B, the thickness (t2) of the second planarization film (270) may be formed thicker than the thickness (t1) of the first planarization film (260). As a result, the second planarization film (270) may be formed wider than the contact hole (CNT). (S104 of FIG. 6)

Fifthly, a first electrode (281b) is formed on the second flattening film (270) as shown in Fig. 8e. The first electrode (281b) can be connected to an auxiliary electrode (281a) that is not covered by the second flattening film (270) on the first flattening film (260).

Specifically, a fourth metal layer is formed on the entire surface of the first and second planarization films (260, 270) using a sputtering method or a MOCVD method. Then, the fourth metal layer is patterned using a mask process using a photoresist pattern to form a first electrode (281b).

The first electrode (281b) may be formed of a transparent metal material or an opaque metal material. The transparent metal material may be a TCO (Transparent Conductive Material) such as ITO, IZO, or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). The opaque metal material may be aluminum (Al), silver (Ag), molybdenum (Mo), a laminated structure of molybdenum and titanium (Mo/Ti), copper (Cu), a laminated structure of aluminum and titanium (Ti/Al/Ti), a laminated structure of aluminum and ITO (ITO/Al/ITO), an APC alloy, or a laminated structure of an APC alloy and ITO (ITO/APC/ITO). The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu). (S105 of FIG. 6)

Sixth, as shown in Fig. 8f, a bank (284), an organic light-emitting layer (282), a second electrode (283), and a sealing film (290) are formed in sequence.

First, a bank (284) is formed to cover the edge of the first electrode (281b) to partition the light-emitting portion (EA). The bank (270) can be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

Then, an organic light-emitting layer (282) is formed on the first electrode (281b) and the bank (284). The organic light-emitting layer (282) can be formed by a deposition process or a solution process. When the organic light-emitting layer (282) is formed by a deposition process, it can be formed using an evaporation method.

When the organic light-emitting layer (262) is a common layer formed in common in the light-emitting portions (EA), the organic light-emitting layer (262) may be formed as a white light-emitting layer that emits white light. When the organic light-emitting layer (262) is a white light-emitting layer, it may be formed in a tandem structure of two or more stacks. Each of the stacks may include a hole transporting layer, at least one light emitting layer, and an electron transporting layer. In addition, a charge generation layer may be formed between the stacks. The charge generation layer may include an n-type charge generation layer positioned adjacent to the lower stack and a p-type charge generation layer formed on the n-type charge generation layer and positioned adjacent to the upper stack. The n-type charge generation layer injects electrons into the lower stack, and the p-type charge generation layer injects holes into the upper stack. The n-type charge generation layer can be formed by an organic layer doped with an alkali metal such as Li, Na, K, or Cs, or an alkaline earth metal such as Mg, Sr, Ba, or Ra. The p-type charge generation layer can be formed by doping a dopant into an organic material having hole transport capability.

Then, a second electrode (283) is formed on the organic light-emitting layer (282). The second electrode (283) may be a common layer formed in common on the light-emitting portions (EA). The second electrode (283) may be formed of a transparent metal material (TCO, Transparent Conductive Material) such as ITO or IZO that can transmit light, or a semi-transmissive metal material (Semi-transmissive Conductive Material) such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). A capping layer may be formed on the second electrode (283).

Then, a sealing film (290) is formed on the second electrode (283). The sealing film (290) serves to prevent oxygen or moisture from penetrating into the organic light-emitting layer (282) and the second electrode (283). To this end, the sealing film (290) may include at least one inorganic film and at least one organic film.

For example, the sealing film (290) may include a first inorganic film (291), an organic film (292), and a second inorganic film (293). In this case, the first inorganic film (291) is formed to cover the second electrode (283). The organic film (292) is formed to cover the first inorganic film. It is preferable that the organic film (292) be formed to have a sufficient thickness to prevent foreign substances (particles) from penetrating the first inorganic film (291) and entering the organic light-emitting layer (282) and the second electrode (263). The second inorganic film (293) is formed to cover the organic film.

Each of the first and second inorganic films (291, 293) may be formed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide or titanium oxide. The organic film (292) may be formed of acrylic resin, epoxy resin, phenolic resin, polyamide resin or polyimide resin. (S106 of FIG. 6)

Seventh, as shown in Fig. 7g, the first substrate (111) and the second substrate (112) are joined by bonding the sealing film (290) of the first substrate (111) and the color filters (321, 322, 323) of the second substrate (112) using an adhesive layer (330). The adhesive layer (330) may be a transparent adhesive resin. (S107 of Fig. 6)

Fig. 9 is a cross-sectional view showing another example of I-I' of Fig. 4.

In FIG. 9, the bank (284) is substantially the same as described in conjunction with FIG. 5, except that it is formed to fill the step caused by the second flattening film (270) between the first electrodes (281b). Therefore, in FIG. 9, a detailed description of the remaining components except for the bank (284) is omitted.

The bank (284) may be formed to cover the edge of the first electrode (281b) on the first planarization film (260) to define the light-emitting portion (EA). The area where the bank (284) is formed does not emit light and thus may be defined as a non-light-emitting portion. In other words, it serves to define the light-emitting portion (EA). The thickness (t5) of the bank (284) may be formed to be thinner than the distance (t6) between the first planarization film (260) and the organic light-emitting layer (282) in the light-emitting portion (EA).

Meanwhile, the second planarization film (270) is formed convexly. In addition, since the organic light-emitting layer (282) is formed by a method such as an evaporation deposition method that does not have good step coverage characteristics, it may be formed thinly in the inclined portion of the second planarization film (270). As a result, the charge generation layer of the first electrode (281a) or the organic light-emitting layer (282) and the second electrode (283) may be short-circuited in the inclined portion of the second planarization film (270). Step coverage refers to the formation of a film deposited by a predetermined deposition method so as to be connected without being interrupted even in a portion where a step is formed. However, in the embodiment of the present invention, since the bank (284) is formed to cover the inclined portion of the second flattening film (270), it is possible to prevent the charge generation layer of the first electrode (281a) or the organic light-emitting layer (282) and the second electrode (283) from being short-circuited at the inclined portion of the second flattening film (270).

FIG. 10 is a flow chart showing a method for manufacturing an organic light-emitting display device according to another embodiment of the present invention. FIGS. 11a to 11c are cross-sectional views taken along line I-I' for explaining a method for manufacturing an organic light-emitting display device according to another embodiment of the present invention.

A method for manufacturing an organic light-emitting display device according to another embodiment of the present invention illustrated in FIG. 10 is substantially the same as described with reference to FIG. 6 and FIGS. 7A to 7G, except for the step of forming a bank (284), an organic light-emitting layer (282), a second electrode (283), and an encapsulating film (290) in step S106 of FIG. 6. Therefore, the steps of forming the bank (284), the organic light-emitting layer (282), the second electrode (283), and the encapsulating film (290) will be described in detail below with reference to FIG. 10 and FIGS. 11A to 11C. Since the cross-sectional views illustrated in FIGS. 11A to 11C relate to the method for manufacturing an organic light-emitting display device illustrated in FIG. 9 described above, the same reference numerals are given to the same components.

Below, steps S201 to S203 are described in detail with reference to FIG. 10 and FIG. 11a to FIG. 11c.

First, as shown in Fig. 11a, an organic material (284') is coated on the first flattening film (260) and the first electrode (281b).

The organic material (284') may be an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. The organic material (284') may be formed on the first planarization film (260) and the first electrode (281b) using slit coating, spin coating, or evaporation. The organic material (284') may be formed to fill a space between the second planarization film (260). (S201 of FIG. 10)

Then, as shown in Fig. 11b, the organic material (284') is dry etched to form a bank (284). It is preferable that the dry etching material be selected from a material that can etch the organic material (284'), but cannot etch the first electrode (281b).

When forming a bank (284) using a dry etching process, the bank (284) may be formed to be filled between the second planarization films (270). In particular, the bank (284) filled between the second planarization films (270) may be formed to be recessed by dry etching. Therefore, when forming a bank (284) using a dry etching process, the thickness (t5) of the bank (284) may be formed to be thinner than the distance (t6) between the first planarization film (260) and the organic light-emitting layer (282) in the light-emitting portion (EA). (S202 of FIG. 10)

Then, as shown in Fig. 11c, an organic light-emitting layer (282), a second electrode (283), and a sealing film (290) are formed in sequence.

An organic light-emitting layer (282) is formed on the first electrode (281b) and the bank (284). The organic light-emitting layer (282) can be formed by a deposition process or a solution process. When the organic light-emitting layer (282) is formed by a deposition process, it can be formed using an evaporation method.

When the organic light-emitting layer (262) is a common layer formed in common in the light-emitting portions (EA), the organic light-emitting layer (262) may be formed as a white light-emitting layer that emits white light. When the organic light-emitting layer (262) is a white light-emitting layer, it may be formed in a tandem structure of two or more stacks. Each of the stacks may include a hole transporting layer, at least one light emitting layer, and an electron transporting layer. In addition, a charge generation layer may be formed between the stacks. The charge generation layer may include an n-type charge generation layer positioned adjacent to the lower stack and a p-type charge generation layer formed on the n-type charge generation layer and positioned adjacent to the upper stack. The n-type charge generation layer injects electrons into the lower stack, and the p-type charge generation layer injects holes into the upper stack. The n-type charge generation layer can be formed by an organic layer doped with an alkali metal such as Li, Na, K, or Cs, or an alkaline earth metal such as Mg, Sr, Ba, or Ra. The p-type charge generation layer can be formed by doping a dopant into an organic material having hole transport capability.

Then, a second electrode (283) is formed on the organic light-emitting layer (282). The second electrode (283) may be a common layer formed in common on the light-emitting portions (EA). The second electrode (283) may be formed of a transparent metal material (TCO, Transparent Conductive Material) such as ITO or IZO that can transmit light, or a semi-transmissive metal material (Semi-transmissive Conductive Material) such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). A capping layer may be formed on the second electrode (283).

Then, a sealing film (290) is formed on the second electrode (283). The sealing film (290) serves to prevent oxygen or moisture from penetrating into the organic light-emitting layer (282) and the second electrode (283). To this end, the sealing film (290) may include at least one inorganic film and at least one organic film.

For example, the sealing film (290) may include a first inorganic film (291), an organic film (292), and a second inorganic film (293). In this case, the first inorganic film (291) is formed to cover the second electrode (283). The organic film (292) is formed to cover the first inorganic film. It is preferable that the organic film (292) be formed to have a sufficient thickness to prevent foreign substances (particles) from penetrating the first inorganic film (291) and entering the organic light-emitting layer (282) and the second electrode (263). The second inorganic film (293) is formed to cover the organic film.

Each of the first and second inorganic films (291, 293) may be formed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide or titanium oxide. The organic film (292) may be formed of acrylic resin, epoxy resin, phenolic resin, polyamide resin or polyimide resin. (S203 of FIG. 10)

Fig. 12 is a plan view showing another example of pixels in a display area in detail. Fig. 13 is a cross-sectional view showing another example of Ⅱ-Ⅱ' of Fig. 12.

The pixel (P) of the organic light-emitting display device illustrated in FIGS. 12 and 13 is substantially the same as described in conjunction with FIGS. 4 and 5, except for the second planarization film (270), the auxiliary electrode (281a), and the first electrode (281b). Therefore, in FIGS. 12 and 13, a detailed description of other components except for the second planarization film (270), the auxiliary electrode (281a), and the first electrode (281b) is omitted.

The auxiliary electrode (281a) is formed on the first planarization film (260). The auxiliary electrode (281a) can be connected to the drain electrode (224) of the thin film transistor through a contact hole (CNT). In Fig. 13, the auxiliary electrode (281a) is exemplified as being connected to the drain electrode (224) of the thin film transistor (220), but it may also be connected to the source electrode (223) of the thin film transistor (220).

A second planarization film (270) may be formed on the auxiliary electrode (281a). The second planarization film (270) is filled in the contact hole (CNT) to planarize the step caused by the contact hole (CNT). The second planarization film (270) may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

The second planarization film (270) is formed to fill the contact hole (CNT) in order to fill the step of the contact hole (CNT). In Fig. 13, the second planarization film (270) is exemplified as being substantially the same as the contact hole (CNT), but is not limited thereto. That is, the second planarization film (270) may be formed narrower than the contact hole (CNT).

Due to the characteristics of the manufacturing process of the second flattening film (270), the thickness (t7) of the second flattening film (270) can be formed thinner than the thickness (t1) of the first flattening film (260). A detailed explanation of the reason why the thickness (t7) of the second flattening film (270) is formed thinner than the thickness (t1) of the first flattening film (260) will be described later in conjunction with FIG. 15a and FIG. 15b.

The first electrode (281b) may be formed on the second planarization film (270). As shown in FIG. 12, the first electrode (281b) may be formed wider than the auxiliary electrode (281a). In addition, as shown in FIG. 12, the auxiliary electrode (281a) and the first electrode (281b) may each be formed wider than the second planarization film (270). Since the second planarization film (270) is formed to fill only the contact hole (CNT), the auxiliary electrode (281a) may be connected to the first electrode (281b) on the first planarization film (260). In FIG. 6, the first electrode (281b) and the auxiliary electrode (281a) are connected on the outer sides of both sides of the contact hole (CNT), but this is not limited thereto. That is, the first electrode (281b) and the auxiliary electrode (281a) can be connected to each other on the outside of at least one side of the contact hole (CNT).

The auxiliary electrode (281a) and the first electrode (281b) may be made of the same material. Alternatively, each of the auxiliary electrode (281a) and the first electrode (281b) may be made of one metal layer or two or more metal layers.

Each of the auxiliary electrode (281a) and the first electrode (281b) may be formed of a transparent metal material or an opaque metal material. The transparent metal material may be a TCO (Transparent Conductive Material) such as ITO or IZO, or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). The opaque metal material may be aluminum (Al), silver (Ag), molybdenum (Mo), a laminated structure of molybdenum and titanium (Mo/Ti), copper (Cu), a laminated structure of aluminum and titanium (Ti/Al/Ti), a laminated structure of aluminum and ITO (ITO/Al/ITO), an APC alloy, or a laminated structure of an APC alloy and ITO (ITO/APC/ITO). The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

For example, the first electrode (281b) may be formed of a two-layer or more laminated structure including a highly reflective metal material, such as aluminum (Al) or silver (Ag), and a transparent metal material, and the auxiliary electrode (281a) may be formed of a low-resistance metal material, such as molybdenum (Mo), a laminated structure of molybdenum and titanium (Mo/Ti), copper (Cu), or a laminated structure of aluminum and titanium (Ti/Al/Ti). In addition, in order to form the reflection area as wide as possible, the first electrode (281b) may be formed of a transparent metal material, and the auxiliary electrode (281a) may be formed of a highly reflective metal material, such as aluminum (Al) or silver (Ag).

Fig. 14 is a flow chart showing a method for manufacturing an organic light-emitting display device according to another embodiment of the present invention. Figs. 15a and 15b are cross-sectional views taken along line II-II' for explaining a method for manufacturing an organic light-emitting display device according to another embodiment of the present invention.

A method for manufacturing an organic light-emitting display device according to another embodiment of the present invention illustrated in FIG. 14 is substantially the same as that described with reference to FIGS. 6 and 7A to 7G, except for the step of forming a second planarization film (270) in step S104 of FIG. 6. Therefore, the step of forming the second planarization film (270) will be described in detail below with reference to FIGS. 14, 15A, and 15B. The cross-sectional views illustrated in FIGS. 15A and 15B relate to the method for manufacturing an organic light-emitting display device illustrated in FIG. 13 described above, and therefore, the same reference numerals are given to the same components.

Below, steps S301 and S302 are described in detail by connecting FIG. 14, FIG. 15a and FIG. 15b.

First, as shown in Fig. 15a, an organic material (270') is coated on the first planarization film (260) and the auxiliary electrode (281a). The organic material (270') may be an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. The organic material (270') may be formed on the first planarization film (260) and the auxiliary electrode (281a) using slit coating, spin coating, or evaporation. The organic material (270') is formed so as to fill the contact hole (CNT).

Then, as shown in Fig. 15b, the organic material (270') is dry etched to form a second planarization film (270). It is preferable that the dry etching material be selected from a material that can etch the organic material (270'), but cannot etch the auxiliary electrode (281a).

As described above, when the second planarization film (270) is formed using a dry etching process, the second planarization film (270) can only fill the contact hole (CNT). In particular, the second planarization film (270) filled in the contact hole (CNT) can be formed to be more recessed than the first planarization film (260) by dry etching. Therefore, when the second planarization film (270) is formed using a dry etching process, the thickness (t7) of the second planarization film (270) can be formed to be thinner than the thickness (t1) of the first planarization film (260). As a result, the second planarization film (270) can be formed to be substantially the same as the contact hole (CNT) or narrower than the contact hole (CNT).

Fig. 16 is a cross-sectional view showing another example of Ⅱ-Ⅱ' of Fig. 12.

In FIG. 16, it is substantially the same as described in conjunction with FIG. 5, except that instead of the second planarization film (270), an auxiliary electrode (281a) is formed to fill the contact hole (CNT). Therefore, in FIG. 16, the second planarization film (270) can be omitted. In FIG. 16, a detailed description of the remaining components except for the auxiliary electrode (281a) is omitted.

The auxiliary electrode (281a) is formed on the first planarization film (260). The auxiliary electrode (281a) can be connected to the drain electrode (224) of the thin film transistor through a contact hole (CNT). In Fig. 5, the auxiliary electrode (281a) is exemplified as being connected to the drain electrode (224) of the thin film transistor (220), but it may also be connected to the source electrode (223) of the thin film transistor (220).

The auxiliary electrode (281a) is filled in the contact hole (CNT) to level the step caused by the contact hole (CNT). That is, the auxiliary electrode (281a) is formed to cover the contact hole (CNT) to fill the step of the contact hole (CNT). Accordingly, the auxiliary electrode (281a) may be formed wider than the contact hole (CNT) as shown in FIG. 16. However, the embodiment of the present invention is not limited thereto. That is, the auxiliary electrode (281a) may be formed to be the same size as or narrower than the contact hole (CNT).

In addition, the auxiliary electrode (281a) may be formed wider than the light-emitting portion (EA). In this case, since the first electrode (281b), the organic light-emitting layer (282), and the second electrode (283) in the light-emitting portion (EA) are formed on the auxiliary electrode (281a), the organic light-emitting layer (282) in the light-emitting portion (EA) may be formed with a uniform thickness, so that the light-emitting portion (EA) may output uniform light.

The auxiliary electrode (281a) may be formed of a transparent metal material or an opaque metal material. The transparent metal material may be a TCO (Transparent Conductive Material) such as ITO, IZO, or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). The opaque metal material may be aluminum (Al), silver (Ag), molybdenum (Mo), a laminated structure of molybdenum and titanium (Mo/Ti), copper (Cu), a laminated structure of aluminum and titanium (Ti/Al/Ti), a laminated structure of aluminum and ITO (ITO/Al/ITO), an APC alloy, or a laminated structure of an APC alloy and ITO (ITO/APC/ITO). The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

As described above, the embodiment of the present invention forms the contact hole (CNT) to overlap with the light-emitting portion (EA), and forms the auxiliary electrode (281a) to fill the contact hole (CNT) in order to flatten the step of the contact hole (CNT). Accordingly, the embodiment of the present invention can form the organic light-emitting layer (282) with a uniform thickness on the auxiliary electrode (281a), so that even if the contact hole (CNT) is formed to overlap with the light-emitting portion (EA), light can be uniformly output from the light-emitting portion (EA).

In addition, since the organic light-emitting element deteriorates over time, it is very important to extend the life of the organic light-emitting element in the organic light-emitting display device. When the area of the light-emitting portion where the organic light-emitting layer emits light is expanded, the life of the organic light-emitting element can be extended. Since the embodiment of the present invention can form the contact hole (CNT) to overlap the light-emitting portion (EA), the area of the light-emitting portion (EA) can be made independent of the area of the contact hole (CNT). As a result, since the embodiment of the present invention can design the area of the light-emitting portion (EA) without being restricted by the area of the contact hole (CNT), the area of the light-emitting portion (EA) can be maximized, thereby improving the life of the organic light-emitting layer.

In addition, the embodiment of the present invention can minimize the area of the non-luminous portion by maximizing the area of the light-emitting portion (EA). Accordingly, when the embodiment of the present invention is applied to a head-mounted display, the non-luminous portion can be prevented from being displayed in a grid shape.

Fig. 17 is a flow chart showing a method for manufacturing an organic light-emitting display device according to another embodiment of the present invention. Figs. 18a and 18b are cross-sectional views taken along lines II-II' for explaining a method for manufacturing an organic light-emitting display device according to another embodiment of the present invention.

Steps S401, S402, S405, and S406 of the method for manufacturing an organic light-emitting display device according to another embodiment of the present invention illustrated in FIG. 17 are substantially the same as steps S101, S102, S106, and S107 of FIG. 6. Therefore, a detailed description of steps S401, S402, S405, and S406 of the method for manufacturing an organic light-emitting display device according to another embodiment of the present invention illustrated in FIG. 17 will be omitted. The cross-sectional views illustrated in FIGS. 18A to 18C relate to the method for manufacturing an organic light-emitting display device illustrated in FIG. 16 described above, and therefore, the same reference numerals are given to the same components.

Below, steps S403 and S404 are described in detail by connecting FIG. 17 and FIG. 18a to FIG. 18c.

First, as shown in Fig. 18a, a third metal layer (281a') that fills the contact hole (CNT) is formed on the entire surface of the first planarization film (260). In order to fill the contact hole (CNT), the third metal layer (281a') can be formed by coating and curing a liquid-state conductive layer.

Then, as shown in Fig. 18b, a fourth metal layer (281b) is formed on the entire surface of the third metal layer (281a'). The fourth metal layer (281b') can be formed using a sputtering method or an MOCVD method.

Then, the third and fourth metal layers (281a', 281b') are simultaneously patterned using a mask process using a photoresist pattern to form an auxiliary electrode (281a) and a first electrode (281b).

Each of the auxiliary electrode (281a) and the first electrode (281b) may be formed of a transparent metal material or an opaque metal material. The transparent metal material may be a TCO (Transparent Conductive Material) such as ITO or IZO, or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). The opaque metal material may be aluminum (Al), silver (Ag), molybdenum (Mo), a laminated structure of molybdenum and titanium (Mo/Ti), copper (Cu), a laminated structure of aluminum and titanium (Ti/Al/Ti), a laminated structure of aluminum and ITO (ITO/Al/ITO), an APC alloy, or a laminated structure of an APC alloy and ITO (ITO/APC/ITO). The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

For example, the first electrode (281b) may be formed of a laminated structure of two or more layers including a highly reflective metal material such as aluminum (Al) or silver (Ag) and a transparent metal material, and the auxiliary electrode (281a) may be formed of a low-resistance metal material such as molybdenum (Mo), a laminated structure of molybdenum and titanium (Mo/Ti), copper (Cu), or a laminated structure of aluminum and titanium (Ti/Al/Ti). In addition, in order to form a reflection area as wide as possible, the first electrode (281b) may be formed of a transparent metal material, and the auxiliary electrode (281a) may be formed of a highly reflective metal material such as aluminum (Al) or silver (Ag). (S403, S404 of FIG. 17)

Figure 19 is a plan view detailing another example of pixels in the display area.

The pixels (P) of the display area illustrated in Fig. 19 are substantially the same as those described in conjunction with Fig. 4, except that they are formed in a square shape. Therefore, a detailed description of the configurations of the pixels (P) in Fig. 19 is omitted.

In an embodiment of the present invention, when the pixel (P) is formed in a square shape as in FIG. 19, the area of the light-emitting portion (EA) can be expanded not only in one direction (up-down direction) but also in the other direction (left-right direction) compared to when the pixel (P) is formed in a rectangular shape as in FIG. 4, so that it can be further expanded. As a result, the embodiment of the present invention can not only improve the lifespan of the organic light-emitting layer, but also minimize the area of the non-light-emitting portion.

In addition, in an embodiment of the present invention, when the pixel (P) is formed in a square shape as in FIG. 19, the first electrode (281b) can be connected to the auxiliary electrode (281a) on the outside of all sides of the contact hole (CNT), so even when a process error occurs during the formation of the auxiliary electrode (281a), the first electrode (281b), and the contact hole (CNT), the first electrode (281b) can be connected to the auxiliary electrode (281a) on the outside of at least one side of the contact hole (CNT).

Meanwhile, the cross-sectional structure of Ⅲ-Ⅲ' of Fig. 19 may be substantially identical to the cross-sectional view of I-I' of Fig. 5 or the cross-sectional view of I-I' of Fig. 9.

Figure 20 is a plan view detailing another example of pixels in the display area.

The pixels (P) of the display area illustrated in Fig. 20 are substantially the same as those described in conjunction with Fig. 12, except that they are formed in a square shape. Therefore, a detailed description of the configurations of the pixels (P) in Fig. 20 is omitted.

In an embodiment of the present invention, when the pixel (P) is formed in a square shape as in FIG. 20, the area of the light-emitting portion (EA) can be further expanded in one direction (up-down direction) as well as the other direction (left-right direction) compared to when the pixel (P) is formed in a rectangular shape as in FIG. 12. As a result, the embodiment of the present invention can not only improve the lifespan of the organic light-emitting layer, but also minimize the area of the non-light-emitting portion.

In addition, in an embodiment of the present invention, when the pixel (P) is formed in a square shape as in FIG. 20, the first electrode (281b) can be connected to the auxiliary electrode (281a) on the outside of all sides of the contact hole (CNT), so even when a process error occurs during the formation of the auxiliary electrode (281a), the first electrode (281b), and the contact hole (CNT), the first electrode (281b) can be connected to the auxiliary electrode (281a) on the outside of at least one side of the contact hole (CNT).

Meanwhile, the cross-sectional structure of Ⅳ-Ⅳ' of Fig. 20 may be substantially identical to the cross-sectional view of Ⅱ-Ⅱ' of Fig. 13 or the cross-sectional view of Ⅱ-Ⅱ' of Fig. 16.

FIGS. 21A and 21B are exemplary drawings showing a head-mounted display according to an embodiment of the present invention.

Referring to FIGS. 21a and 21b, a head-mounted display (HMD) according to an embodiment of the present invention includes a display storage case (10), a left-eye lens (20a), a right-eye lens (20b), and a head-mounted band (30).

The display storage case (10) stores the display device and provides an image of the display device to the left eye lens (20a) and the right eye lens (20b). The display device may be an organic light-emitting display device according to an embodiment of the present invention. The organic light-emitting display device according to an embodiment of the present invention has already been described in detail above with reference to FIGS. 2 to 20.

The display storage case (10) may be designed to provide the same image to the left eye lens (20a) and the right eye lens (20b). Alternatively, the display storage case (10) may be designed to display the left eye image on the left eye lens (20a) and the right eye image on the right eye lens (20b).

In the display storage case (10), a left-eye organic light-emitting display device (11) positioned in front of the left-eye lens (20a) and a right-eye organic light-emitting display device (12) positioned in front of the right-eye lens (20b) can be stored, as shown in FIG. 22. FIG. 22 shows a cross-sectional view of the display storage case (10) when viewed from above. The left-eye organic light-emitting display device (11) can display a left-eye image, and the right-eye organic light-emitting display device (12) can display a right-eye image. Accordingly, the left-eye image displayed on the left-eye organic light-emitting display device (11) can be shown to the user's left eye (LE) through the left-eye lens (20a), and the right-eye image displayed on the right-eye organic light-emitting display device (11) can be shown to the user's right eye (RE) through the right-eye lens (20b).

In addition, in Fig. 22, a magnifying lens may be additionally placed between the left eye lens (20a) and the left eye organic light-emitting display device (11) and between the right eye lens (20b) and the right eye organic light-emitting display device (12). In this case, due to the magnifying lens, the images displayed on the left eye organic light-emitting display device (11) and the right eye organic light-emitting display device (12) may be magnified to the user.

In the display storage case (10), a mirror reflector (13) positioned in front of a left-eye lens (20a) and a right-eye lens (20b) as shown in FIG. 23, and an organic light-emitting display device (14) positioned on the mirror reflector (13) can be stored. FIG. 23 shows a cross-sectional view of the display storage case (10) when viewed from the side. The organic light-emitting display device (14) displays an image in the direction of the mirror reflector (13), and the mirror reflector (13) totally reflects the image of the organic light-emitting display device (14) in the direction of the left-eye lens (20a) and the right-eye lens (20b). Accordingly, the image displayed on the organic light-emitting display device (14) can be provided to the left-eye lens (20a) and the right-eye lens (20b). In FIG. 23, only the left-eye lens (20a) and the user's left eye (LE) are illustrated for convenience of explanation. When a mirror reflector (13) is used as in Fig. 23, the display storage case (10) can be formed thinly.

In addition, in Fig. 22, a magnifying lens may be additionally placed between the left eye lens (20a) and the mirror reflector (13) and between the right eye lens (20b) and the mirror reflector (13). In this case, the image displayed on the left eye organic light-emitting display device (11) and the right eye organic light-emitting display device (12) may be magnified to the user due to the magnifying lens.

The head-mounted band (30) is fixed to the display storage case (10). The head-mounted band (30) is exemplified as being formed to surround the upper surface and both sides of the user's head, but is not limited thereto. The head-mounted band (30) is intended to fix the head-mounted display to the user's head, and may be formed in the form of a glasses frame or a helmet.

Meanwhile, since the image of the organic light-emitting display device is displayed directly in front of the user's eyes in the conventional head-mounted display, there is a problem in that the non-luminous areas appear in a grid pattern as in FIG. 1. However, the embodiment of the present invention forms the contact hole (CNT) to overlap the light-emitting portion (EA), and fills the contact hole (CNT) with a second planarization film (270) to flatten the step of the contact hole (CNT). Accordingly, the embodiment of the present invention can form the organic light-emitting layer with a uniform thickness on the second planarization film (270), so that even if the contact hole (CNT) is formed to overlap the light-emitting portion (EA), light can be uniformly output from the light-emitting portion (EA). Accordingly, the embodiment of the present invention can minimize the area of the non-luminous portion by maximizing the area of the light-emitting portion (EA), and thus, when applied to a head-mounted display, it is possible to prevent the non-luminous portion from appearing in a grid pattern as in FIG. 24.

Although the embodiments of the present invention have been described in more detail with reference to the attached drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be made without departing from the technical idea of the present invention. Accordingly, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but to explain it, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are exemplary in all aspects and not restrictive. The protection scope of the present invention should be interpreted by the claims, and all technical ideas within a scope equivalent thereto should be interpreted as being included in the scope of the rights of the present invention.

100: Organic light-emitting display device 110: Display panel
111: Lower substrate 112: Upper substrate
120: Gate driver 130: Source driver IC
140: Flexible film 150: Circuit board
160: Timing controller 210: Buffer film
220: Thin film transistor 221: Active layer
222: Gate electrode 223: Source electrode
224: Drain electrode 230: Gate insulating film
240: Interlayer insulation 250: Protective film
260: 1st flattening film 270: 2nd flattening film
281a: Auxiliary electrode 280: Organic light-emitting device
281b: First electrode 282: Organic light-emitting layer
283: Second electrode 284: Bank
290: Seal 291: 1st Weapon Barrier
292: Organic membrane 293: Second inorganic membrane
310: Black Matrix 321: Green Color Filter
322: Blue color filter 323: Red color filter
330: Transparent adhesive layer HMD: Head-mounted display
10: Display storage case 11: Organic light-emitting display for right eye
12: Organic light-emitting display device for left eye 20a: Left eye lens
20b: Right eye lens 30: Head mounted band

Claims (18)

A thin film transistor arranged on a substrate;
A first planarizing film disposed on the thin film transistor;
A contact hole penetrating the first planarizing film to expose the source or drain electrode of the thin film transistor;
A first electrode electrically connected to the source or drain electrode of the thin film transistor;
An organic light-emitting layer disposed on the first electrode; and
A second electrode is provided on the organic light-emitting layer,
The region where the first electrode, the organic light-emitting layer, and the second electrode are laminated is defined as a light-emitting portion that emits light.
The above contact hole is characterized by overlapping with the light-emitting portion,
It further comprises a bank that covers the edge of the first electrode and partitions the light-emitting portion,
The area where the above bank is placed is characterized by being defined as a non-luminous area,
An organic light-emitting display device, characterized in that the thickness of the bank is thinner than the distance between the first planarizing film and the organic light-emitting layer in the light-emitting portion. In paragraph 1,
An organic light-emitting display device further comprising a second planarizing film filled in the contact hole to planarize the contact hole. In the second paragraph,
An organic light-emitting display device, characterized in that the thickness of the second planarizing film is thicker than the thickness of the first planarizing film. delete In the second paragraph,
An organic light-emitting display device, characterized in that the second flattening film is provided wider than the contact hole. In the second paragraph,
An organic light-emitting display device, characterized in that the second flattening film is provided wider than the light-emitting portion. In the second paragraph,
An organic light-emitting display device further comprising an auxiliary electrode disposed under the second flattening film and connected to a source or drain electrode of the thin film transistor through the contact hole. In paragraph 7,
An organic light-emitting display device, characterized in that the first electrode is connected to the auxiliary electrode on the outside of at least one side of the contact hole. In paragraph 7,
An organic light-emitting display device, characterized in that the first electrode is provided wider than the auxiliary electrode. delete delete delete Organic light emitting display;
A display storage case for storing the above organic light-emitting display device; and
A lens is provided on one side of the storage case and provides an image of the organic light-emitting display device.
The above organic light emitting display device,
A thin film transistor arranged on a substrate;
A first planarizing film disposed on the thin film transistor;
A contact hole penetrating the first planarizing film to expose the source or drain electrode of the thin film transistor;
A first electrode electrically connected to the source or drain electrode of the thin film transistor;
An organic light-emitting layer disposed on the first electrode; and
It comprises a second electrode disposed on the organic light-emitting layer,
The region where the first electrode, the organic light-emitting layer, and the second electrode are laminated is defined as a light-emitting portion that emits light.
The above contact hole is characterized by overlapping with the light-emitting portion,
It further comprises a bank that covers the edge of the first electrode and partitions the light-emitting portion,
The area where the above bank is placed is characterized by being defined as a non-luminous area,
A head-mounted display, characterized in that the thickness of the bank is thinner than the distance between the first planarizing film and the organic light-emitting layer in the light-emitting portion. A step of forming a thin film transistor and a first planarizing film covering the thin film transistor on a substrate;
A step of forming a contact hole penetrating the first planarization film to expose the source or drain electrode of the thin film transistor;
A step of forming an auxiliary electrode connected to the source or drain electrode of the thin film transistor through the contact hole;
A step of forming a second planarizing film filling the contact hole on the auxiliary electrode;
A step of forming a first electrode on the second flattening film;
A step of forming a bank that covers the edge of the first electrode and defines a light-emitting portion;
A step of forming an organic light-emitting layer on the first electrode; and
Comprising a step of forming a second electrode on the organic light-emitting layer,
The above contact hole overlaps with the above light-emitting part,
A method for manufacturing an organic light-emitting display device, characterized in that the thickness of the bank is thinner than the distance between the first planarizing film and the organic light-emitting layer in the light-emitting portion. In Article 14,
The step of forming the second flattening film is:
A step of coating an organic material on the first flattening film, the auxiliary electrode, and the contact hole; and
A method for manufacturing an organic light-emitting display device, characterized by comprising the step of forming the second planarization film by placing a mask on the contact hole and developing an organic material not covered by the mask. In Article 14,
The step of forming the second flattening film is:
A step of coating an organic material on the first flattening film, the auxiliary electrode, and the contact hole; and
A method for manufacturing an organic light-emitting display device, characterized by including a step of forming the second planarizing film by dry etching the organic material. delete In Article 14,
The steps of forming the above bank are:
A step of coating an organic material on the first flattening film and the first electrode; and
A method for manufacturing an organic light-emitting display device, characterized by including a step of forming the bank by dry etching the organic material.

Images