KR102714143B1 - Methods and support bracket devices for substrate processing - Google Patents

Abstract

Aspects of the present disclosure relate to methods and support bracket devices for substrate processing, such as plasma processing chambers. In one implementation, the substrate processing chamber includes a chamber body. The chamber body includes one or more sidewalls, each of the one or more sidewalls including an inner surface. The substrate processing chamber also includes a pedestal having a support surface, a processing volume above the pedestal, and a lower volume below the pedestal. The substrate processing chamber also includes a bracket mounted to an inner surface of a sidewall of the one or more sidewalls. The bracket includes a first end, a second end, and a longitudinal length between the first end and the second end. The bracket also includes a gas opening formed in the bracket between the first end and the second end. The gas opening allows gas to flow through the gas opening.

Description

Methods and support bracket devices for substrate processing

[0001] Aspects of the present disclosure generally relate to methods and support bracket devices for substrate processing, such as plasma processing chambers.

[0002] Substrate processing chambers, such as plasma-enhanced chemical vapor deposition (PECVD) processing chambers, can be used to deposit thin films on substrates to form electronic devices. The substrate processing chambers are cleaned to remove accumulation of materials resulting from the processing operations. During the cleaning, cleaning gases are introduced into the substrate processing chambers. The flow of the cleaning gases throughout the processing chambers is non-uniform, causing the cleaning gases to be concentrated in specific areas of the processing chambers. The non-uniform flow of the cleaning gases and the resulting concentration in specific areas requires longer cleaning times to effectively clean the entire substrate processing chambers. The non-uniform flow of the cleaning gases also increases the amount of cleaning gases required to effectively clean the substrate processing chambers, thereby increasing the consumption of the cleaning gases.

[0003] Longer cleaning times and increased consumption of cleaning gases result in operational delays, increased cleaning costs, and reduced throughput and yield of substrate processing chambers.

[0004] Therefore, there is a need for devices and methods that enable faster cleaning rates, less consumption of cleaning gas, increased cost efficiency, and increased throughput.

[0005] Aspects of the present disclosure generally relate to methods and support bracket devices for substrate processing, such as plasma processing chambers.

[0006] In one embodiment, a substrate processing chamber includes a chamber body. The chamber body includes one or more sidewalls, each of the one or more sidewalls including an inner surface. The substrate processing chamber also includes a pedestal having a support surface, a processing volume above the pedestal, and a lower volume below the pedestal. The substrate processing chamber also includes a bracket mounted to an inner surface of the sidewall of the one or more sidewalls. The bracket includes a first end, a second end, and a longitudinal length between the first end and the second end. The bracket also includes a vertical portion and a horizontal portion. The horizontal portion includes at least one surface parallel to the support surface of the pedestal. The bracket also includes a gas opening formed between the first end and the second end in the bracket. The gas opening allows gas to flow from the processing volume through the gas opening to the lower volume. The substrate processing chamber also includes a shadow frame that is movable to and from contacting the bracket.

[0007] In one embodiment, a method of operating a substrate processing chamber includes processing a substrate disposed on a support surface of a pedestal. The pedestal is disposed in a chamber body. The method also includes removing the substrate from the support surface. The method also includes directing one or more cleaning gases over the support surface of the pedestal and into a gas opening formed in a bracket mounted to the chamber body. The gas opening is disposed between a first end and a second end of the bracket.

[0008] In one embodiment, a method of operating a substrate processing chamber includes processing a substrate disposed in a processing volume with a shadow frame disposed at a gap from one or more brackets mounted on a chamber body. The method also includes moving the shadow frame into contact with the one or more brackets mounted on the chamber body. The method also includes flowing one or more cleaning gases into the processing volume. Flowing the one or more cleaning gases includes flowing the one or more cleaning gases through one or more gas openings formed in each of the one or more brackets.

[0009] So that the above-described features of the present disclosure may be understood in detail, a more particular description of the present disclosure, briefly summarized above, may be had by reference to the embodiments, some of which are illustrated in the appended drawings. It should be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of the scope, for the invention may admit to other equally effective embodiments.
[0010] Figure 1a is a schematic cross-sectional view of a substrate processing chamber according to one implementation.
[0011] FIG. 1b is a schematic enlarged view of a portion of the substrate processing chamber illustrated in FIG. 1a according to one implementation.
[0012] FIG. 1c is a schematic plan view of the substrate processing chamber illustrated in FIG. 1a according to one implementation.
[0013] FIG. 1d is a schematic isometric view of the second bracket illustrated in FIGS. 1a - 1c according to one implementation.
[0014] FIG. 1e is a schematic enlarged isometric plan view of the second bracket illustrated in FIG. 1d according to one implementation.
[0015] FIG. 1f is a schematic enlarged isometric bottom view of the second bracket illustrated in FIG. 1d according to one implementation.
[0016] Figure 2a is a schematic plan view of a substrate processing chamber according to one implementation.
[0017] FIG. 2b is a schematic isometric view of the second bracket illustrated in FIG. 2a according to one implementation.
[0018] FIG. 2c is a schematic enlarged isometric plan view of the second bracket illustrated in FIG. 2b according to one implementation.
[0019] FIG. 2d is a schematic enlarged isometric bottom view of the second bracket illustrated in FIG. 2c, according to one implementation.
[0020] Figure 3 is a schematic plan view of a substrate processing chamber according to one implementation.
[0021] Figure 4 is a schematic plan view of a substrate processing chamber according to one implementation.
[0022] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the drawings. It is contemplated that elements and features of one embodiment may be beneficially incorporated into other embodiments without further recitation.

[0023] Aspects of the present disclosure generally relate to methods and support bracket devices for substrate processing, such as plasma processing chambers.

[0024] FIG. 1A is a schematic cross-sectional view of a substrate processing chamber (100) according to one implementation. The substrate processing chamber (100) may be, for example, a plasma processing chamber. In one example, the substrate processing chamber (100) is a plasma processing chamber used as part of a PECVD system. The substrate processing chamber (100) is operable to perform a deposition process for an encapsulation layer by a PECVD process. It is noted that the substrate processing chamber (100) of FIG. 1A is only an exemplary apparatus that may be used to form electronic devices on a substrate. One suitable chamber for a PECVD process is available from Applied Materials, Inc., located in Santa Clara, California. It is contemplated that other deposition chambers, including deposition chambers from other manufacturers, may be utilized in conjunction with aspects of the present disclosure.

[0025] The substrate processing chamber (100) includes one or more sidewalls (102) (e.g., four sidewalls (102) are exemplified in FIG. 1C) and a bottom portion (104) defining a chamber body (105) of the substrate processing chamber (100). The chamber body (105) and a lid assembly (130) are used to define a processing volume (108) of the interior volume of the substrate processing chamber (100). The lid assembly (130) includes a backing plate (106) and a gas distribution plate or diffuser (110). The diffuser (110) includes gas openings (124) formed through the diffuser (110) to introduce gases into the processing volume (108), and the diffuser (110) may also be referred to as a faceplate or showerhead.

[0026] The diffuser (110) is coupled to the backing plate (106), and a plenum (117) is between the backing plate (106) and the diffuser (110). The plenum (117) defines a gap between the backing plate (106) and the diffuser (110).

[0027] The backing plate (106) includes a plurality of gas openings (101A-101C) (three are shown in FIG. 1A) formed through the backing plate (106). Each gas opening of the plurality of gas openings (101A-101C) is fluidly connected to a conduit of the plurality of conduits (116A-116C). A processing gas source (112) is fluidly connected to the first gas opening (101A) through the first conduit (116A) to provide processing gas to the plenum (117).

[0028] Gases from the plenum (117) flow through gas apertures (124) of the diffuser (110) into the processing volume (108). A plurality of remote plasma sources (118A-118C), such as inductively coupled remote plasma sources, are coupled to a plurality of conduits (116A-116C). A radio frequency (RF) power source (122) is coupled to the backing plate (106) and/or the diffuser (110) to provide RF power to the diffuser (110). The RF power source (122) is used to generate an electric field between the diffuser (110) and a pedestal (120) (the pedestal (120) may be referred to as a substrate support or susceptor). The electric field enables a plasma to form from gases present between the diffuser (110) and the pedestal (120) within the processing volume (108). A variety of RF frequencies can be used, such as from about 0.3 MHz to about 200 MHz. In one example, the RF power source (122) provides power to the diffuser (110) at a frequency of 13.56 MHz.

[0029] The backing plate (106) is disposed on a cover plate (126) which is disposed on the sidewalls (102) of the substrate processing chamber (100). A seal (128), such as an elastomeric O-ring, is provided between the sidewalls (102) and the cover plate (126). The cover plate (126), the backing plate (106), and components coupled thereto, such as a diffuser (110) and a plurality of conduits (116A), may define a cover assembly (130). The cover assembly (130) may also include components positioned on or attached to the cover assembly (130), such as an RF power source (122) and remote plasma sources (118A-118C). The cover assembly (130) may be removable from the chamber body (105), and the cover assembly (130) may be aligned with the chamber body (105) by indexing pins (131).

[0030] With continued reference to the substrate processing chamber (100) of FIG. 1A, the processing volume (108) is accessed through a sealable slit valve opening (132) formed through one of the sidewalls (102). Accordingly, a substrate (134) can be conveyed in and out of the processing volume (108) through the slit valve opening (132). A pedestal (120) includes a support surface (136) for supporting a substrate (134) thereon, wherein a stem (138) is coupled to a lift system (140) for raising and lowering the pedestal (120).

[0031] A mask frame (142) and a shadow frame (103) are included within the substrate processing chamber (100). The shadow frame (103) and/or the mask frame (142) may be positioned over a periphery of the substrate (134) during processing. The shadow frame (103) and/or the mask frame (142) may include a plurality of screens, such as mask screens, coupled to the shadow frame (103) and/or the mask frame (142) that include microscopic openings corresponding to devices or layers formed on the substrate (134). The present disclosure contemplates that the mask frame (142) or the shadow frame (103) may be omitted. The present disclosure also contemplates that the mask frame (142) and the shadow frame (103) may be combined into a single component.

[0032] Substrate lift pins (144) are movably positioned through the pedestal (120) to move the substrate (134) to and from the support surface (136) to enable substrate transfer. The pedestal (120) may also include heating and/or cooling elements to maintain the pedestal (120) and the substrate (134) positioned on the pedestal (120) at a desired temperature.

[0033] Support members (148) are also shown as being at least partially disposed within the processing volume (108). The support members (148) may also function as alignment and/or positioning devices relative to the shadow frame (103) and/or the mask frame (142). The support members (148) are coupled to a motor (150) operable to move the support members (148) relative to the pedestal (120) and thereby position the shadow frame (103) and/or the mask frame (142) relative to the substrate (134). A vacuum pump (152) is coupled to the substrate processing chamber (100) to control the pressure within the processing volume (108).

[0034] The substrate processing chamber (100) includes one or more brackets (109A-109D) mounted on inner surfaces (141) of sidewalls (102) (FIG. 1C illustrates four brackets (109A-109D) mounted on four sidewalls (102). During processing of substrates, such as the substrate (134), the shadow frame (103) is elevated above the brackets (109A-109D) such that the shadow frame (103) is positioned with a predetermined gap from each of the brackets (109A-109D) so that the shadow frame (103) does not contact the brackets (109A-109D). During processing, processing gases flow from the processing volume (108) into the lower volume (111) through the gap between the shadow frame (103) and the brackets (109A-109D). Between processing of the substrates, for example after processing of the substrate (134), the substrate processing chamber (100) may be cleaned. In one example, the substrate (134) is removed from the substrate processing chamber (100) after processing and before cleaning. After processing of the substrate (134), the shadow frame (103) is moved into contact with the brackets (109A-109D) by lowering the shadow frame (103) relative to the brackets (109A-109D). The shadow frame (103) is lowered toward the bottom (104) of the chamber body (105) away from the diffuser (110). The shadow frame (103) and/or the mask frame (142) can be moved (e.g., raised and/or lowered) using one or more of the stem (138), the pedestal (120), the lift system (140), the support members (148), and/or the motor (150). The brackets (109A-109D) support the shadow frame (103) above.

[0035] The substrate processing chamber (100) is cleaned while the shadow frame (103) is in contact with the brackets (109A-109D). During the cleaning of the substrate processing chamber (100), a cleaning gas (107) from a cleaning gas source (119) may be provided to a plurality of remote plasma sources (118A-118C). In one example, the cleaning gas (107) comprises a fluoride material, such as NF ₃ , F ₂ , and/or SF ₆ . A first remote plasma source (118A) is fluidly connected to the first gas opening (101A). A second remote plasma source (118B) is fluidly connected to the second gas opening (101B) of the backing plate (106). A third remote plasma source (118C) is fluidly connected to a third gas opening (101C) of the backing plate (106).

[0036] As described above, the shadow frame (103) is movable to contact the brackets (109A-109D) and not to contact the brackets (109A-109D). When contacting the brackets (109A-109D), the shadow frame (103) of the substrate processing chamber (100) is in the cleaning position. When the shadow frame (103) is positioned with a certain gap from the brackets (109A-109D) so that the shadow frame (103) does not contact the brackets (109A-109D), the shadow frame (103) of the substrate processing chamber is in the processing position.

[0037] When this is done, a remote plasma is formed, and from this remote plasma, dissociated cleaning gas species are generated. The plasma of the cleaning gas (107) is provided to the processing volume (108) through the plurality of conduits (116A-116C) and through the gas openings (124) formed in the diffuser (110) to clean components of the substrate processing chamber (100), such as the inner surfaces (141) of the sidewalls (102). The cleaning gas may be further excited by the RF power source (122) and provided to flow through the diffuser (110) to reduce recombination of the dissociated cleaning gas species.

[0038] As illustrated in FIG. 1A, a cleaning gas (107) flows from a plurality of remote plasma sources (118A-118C) into a plurality of conduits (116A-116C). The cleaning gas (107) flows from the plurality of conduits (116A-116C) through a plurality of gas openings (101A-101C) of the backing plate (106) into a plenum (117). The cleaning gas (107) flows from the plenum (117) through the gas openings (124) into the processing volume (108). The cleaning gas (107) cleans components of the substrate processing chamber (100), such as the support surface (136) of the pedestal (120) and/or the inner surfaces (141) of the sidewalls (102).

[0039] A cleaning gas (107) flows from a processing volume (108) above a pedestal (120), through brackets (109A-109D), and into a lower volume (111) of a substrate processing chamber (100) below the pedestal (120). The cleaning gas (107) flows through the brackets (109A-109D) by flowing through gaps (113) disposed at corners of the chamber body (105) and by flowing through gas openings (115A, 115B) formed in one or more of the brackets (109A-109D). The gaps (113) and gas openings (115A, 115B) are illustrated in FIG. 1C. The cleaning gas (107) flows from the lower volume (111) and is exhausted from the substrate processing chamber (100). The cleaning gas (107) is exhausted from the lower volume (111) through the exhaust port (190) formed at the lowermost part (104) using a vacuum pump (152).

[0040] In one example, the first gas opening (101A) is optionally configured to provide both a processing gas and a cleaning gas to the plenum (117) of the substrate processing chamber (100). The second gas opening (101B) and the third gas opening (101C) are configured to provide a cleaning gas to the plenum (117) of the substrate processing chamber (100).

[0041] The substrate processing chamber (100) includes a plurality of brackets (109A-109D) (e.g., four brackets are illustrated in FIG. 1C). FIG. 1A illustrates a first bracket (109A) and a second bracket (109B). FIG. 1C illustrates a third bracket (109C) and a fourth bracket (109D).

[0042] FIG. 1B is a schematic, enlarged view of a portion of the substrate processing chamber (100) illustrated in FIG. 1A, according to one implementation. The second bracket (109B) includes a vertical portion (121) and a horizontal portion (123). The vertical portion (121) includes an inner surface (125) and an outer surface (127). The present disclosure contemplates that variations of the terms “inner” and “outer” herein are used to refer to a surface of the bracket (e.g., the second bracket (109B)). For example, variations of the terms “inner” and “outer” are used to refer to a center of the substrate processing chamber (100) disposed on a surface of the second bracket (109B). The horizontal portion (123) includes an upper surface (129), a lower surface (133), and an inner surface (135) extending between the lower surface (133) and the upper surface (129). The inner surface (135) is rounded. The lower surface of the shadow frame (103) contacts an upper portion of the inner surface (135) of the second bracket (109B).

[0043] The second bracket (109B) includes one or more protrusions (137) that protrude outwardly from an outer surface (127) of the vertical portion (121). The one or more protrusions (137) protrude into one or more recesses (139) formed in an inner surface (141) of the side wall (102). The horizontal portion (123) protrudes inwardly at least partially from the inner surface (125) of the vertical portion (121) and from the inner surface (141) toward the pedestal (120). The upper surface (129) and the lower surface (133) of the horizontal portion (123) are substantially parallel to the supporting surface (136) of the pedestal (120).

[0044] A second bracket (109B) is mounted to the side wall (102). An outer surface (127) interfaces with and contacts an inner surface (141) of the side wall (102). One or more protrusions (137) enable mounting of the second bracket (109B) to the side wall (102). One or more recessed surfaces (143) are formed in the inner surface (125). One or more openings (145) extend from the recessed surfaces (143) through the protrusions (137) to receive fasteners (e.g., screws, studs, and/or bolts). The fasteners within the openings (145) enable mounting of the second bracket (109B) to the side wall (102). The lower surface of each protrusion (137) rests on the shoulder of an individual recess (139) formed in the side wall (102).

[0045] The present disclosure contemplates that each of the plurality of brackets (109A-109D) illustrated in FIG. 1C may include features, aspects, components, and/or characteristics of the second bracket (109B).

[0046] FIG. 1C is a schematic plan view of the substrate processing chamber (100) illustrated in FIG. 1A, according to one implementation. The chamber body (105) includes four sidewalls (102A-102D) defining a rectangular shape of the chamber body (105). Each of the first bracket (109A), the second bracket (109B), the third bracket (109C), and the fourth bracket (109D) is mounted to a respective one of the four sidewalls (102) and is arranged parallel to a respective one of the four sidewalls (102). The first bracket (109A) includes a gas opening (115A) formed therein, and the second bracket (109B) includes a gas opening (115B) formed therein. A plurality of brackets (109A-109D) are arranged in a rectangular manner around the pedestal (120). Gaps (113) are arranged at corners of the chamber body (105) where two of the side walls (102) intersect (four gaps (113) are illustrated in FIG. 1C). The gaps (113) are arranged between individual ends of adjacent brackets of the plurality of brackets (109A-109D). For example, one of the gaps (113) is defined by an end of the first bracket (109A), an end of the third bracket (109C), a corner of the shadow frame (103), and an intersection (146) of two of the side walls (102).

[0047] For example, as illustrated in FIG. 1c, at least a portion of each gas opening (115A, 115B) is positioned between the side wall (102) of the chamber body (105) and the shadow frame (103) in the horizontal plane.

[0048] As discussed above, during cleaning, gases, such as cleaning gases, can flow through the gaps (113), the gas openings (115A) formed in the first bracket (109A), and the gas openings (115B) formed in the second bracket (109B).

[0049] During cleaning, the shadow frame (103) is moved into contact with the horizontal portion (123) of each bracket (109A-109D) (as illustrated in FIGS. 1A and 1B). Thus, the gap between the shadow frame (103) and the horizontal portion (123) that exists during processing is closed during cleaning. Thus, the cleaning gas (107) flowing in the processing volume (108) is directed across the upper surface of the shadow frame (103) across the support surface (136). Portions of the cleaning gas (107) flowing within the processing volume (108) are simultaneously directed into the gas openings (115A, 115B) and into the gaps (113), respectively. Portions of the cleaning gas (107) flow through the gas openings (115A, 115B) and the gaps (113), respectively, into the lower volume (111). For example, a first portion of the cleaning gas (107) may flow into the lower volume (111) through the gas opening (115A), while a second portion of the cleaning gas (107) may flow into the lower volume (111) through one of the gaps (113).

[0050] The chamber body (105) includes a pair of long sides (147C, 147D) and a pair of short sides (147A, 147B) that are shorter than the long sides (147C, 147D). In one example, the plurality of gas openings (101A-101C) and the plurality of conduits (116A-116C) of the backing plate (106) are aligned vertically with the horizontal positions (188A-188C). Brackets (109A, 109B) having the gas openings (115A, 115B) formed therein are mounted on the sidewalls (102) furthest from the plurality of gas openings (101A-101C) configured to introduce a cleaning gas into the processing volume (108). Brackets (109A, 109B) having gas openings (115A, 115B) formed therein are mounted on the short sides (147A, 147B) which are shorter than the long sides (147C, 147D).

[0051] In one embodiment that can be combined with other embodiments, the first long side (147C) is an electrical connection side, and the second long side (147D) is a water connection side of the chamber body (105). The first short side (147A) is a slit valve side, and the second short side (147B) is a windows side of the chamber body (105). The electrical connection side is connected to electrical equipment, and the water connection side is connected to a water manifold for delivering water to the substrate processing chamber (100). The slit valve side includes a slit valve opening (132), and the window side includes one or more windows. Brackets (109A, 109B) having gas openings (115A, 115B) formed inside are mounted on the slit valve side and the window side of the chamber body (105).

[0052] FIG. 1d is a schematic isometric view of the second bracket (109B) illustrated in FIGS. 1a - 1c according to one implementation. FIG. 1e is a schematic enlarged isometric top view of the second bracket (109B) illustrated in FIG. 1d according to one implementation. FIG. 1f is a schematic enlarged isometric bottom view of the second bracket (109B) illustrated in FIG. 1d according to one implementation. FIGS. 1d - 1f are described together.

[0053] The second bracket (109B) includes a first end (149), a second end (151), and a longitudinal length (LD ₁ ) between the first end (149) and the second end (151). The second bracket (109B) includes a plurality of recessed surfaces (143). Each of the recessed surfaces (143) includes two or more openings (145) for receiving fasteners. The second bracket (109B) includes a rigid body made of a metallic material, such as aluminum, partially coated with anodized aluminum. A gas opening (115B) is formed in the horizontal portion (123) and is positioned between the first end (149) and the second end (151). The gas opening (115B) includes a slot formed in an inner surface (135) of the horizontal portion (123). The gas opening (115B) extends from the inner surface (135) of the horizontal portion (123) to the inner surface (125) of the vertical portion (121). The gas opening (115B) extends from the upper surface (129) of the horizontal portion (123) to the lower surface (133).

[0054] Each of the horizontal portion (123) and the vertical portion (121) includes a thickness of greater than or equal to 0.25 inches. For the horizontal portion (123), the thickness is measured between the upper surface (129) and the lower surface (133). For the vertical portion (121), the thickness is measured between the inner surface (125) and the outer surface (127).

[0055] The gas opening (115B) defines a first inner edge (153) and a second inner edge (154) of the horizontal portion (123). The gas opening (115B) includes an opening length (L ₁ ) between the first inner edge (153) and the second inner edge (154). The first inner edge (153) and the second inner edge (154) extend inwardly from the inner surface (125) of the vertical portion (121).

[0056] The longitudinal length (LD ₁ ) is greater than 20 inches, for example, in a range of 20 inches to 120 inches. In one example, the longitudinal length (LD ₁ ) is 65 inches. The aperture length (L ₁ ) is less than 15 inches, for example, in a range of 0.1 inches to 12 inches. In one example, the aperture length (L ₁ ) is 4 inches. In one example, the aperture length (L ₁ ) is 12 inches.

[0057] Brackets (109A, 109B) having gas apertures (115A, 115B) formed therein enable uniform distribution of cleaning gases throughout the processing volume (108) of the substrate processing chamber (100) during cleaning. Uniform distribution of the cleaning gases enables faster cleaning rates, less consumption of cleaning gas materials, reduced operating costs, and increased throughput. In an example where an aperture length (L ₁ ) of 4 inches is used for the gas apertures (115A, 115B) of the first bracket (109A) and the second bracket (109B), cleaning time is reduced by 53% compared to brackets without gas apertures (115A, 115B).

[0058] As discussed above, the shadow frame (103) contacts the brackets (109A-109D) during cleaning. The gas openings (115A, 115B) enable the benefits (e.g., uniform distribution of cleaning gases) for such configurations as compared to a configuration where the shadow frame (103) is elevated above and a gap from the brackets (109A-109D) during cleaning. The gas openings (115A, 115B) also enable the benefits for configurations where at least a portion of the cleaning gas (107) is introduced into the processing volume (108) at a location that is not vertically aligned with the horizontal center of the support surface (136) of the pedestal (120).

[0059] FIG. 2A is a schematic plan view of a substrate processing chamber (200) according to one implementation. Aspects of the substrate processing chamber (200) include many of the same aspects, features, components and characteristics of the substrate processing chamber (100) described above. Aspects of the substrate processing chamber (200) can be used as part of the substrate processing chamber (100) described above.

[0060] The first bracket (209A) includes a gas opening (215A) formed therein, and the second bracket (209B) includes a gas opening (215B) formed therein. The first bracket (209A) includes many of the same aspects, features, components, and characteristics of the first bracket (109A) described above. The second bracket (209B) includes many of the same aspects, features, components, and characteristics of the second bracket (109B) described above.

[0061] FIG. 2b is a schematic isometric view of the second bracket (209B) illustrated in FIG. 2a according to one implementation. FIG. 2c is a schematic enlarged isometric top view of the second bracket (209B) illustrated in FIG. 2b according to one implementation. FIG. 2d is a schematic enlarged isometric bottom view of the second bracket (209B) illustrated in FIG. 2c according to one implementation. FIGS. 2b-2d are described together.

[0062] The gas opening (215B) includes many of the same aspects, features, components and characteristics of the gas opening (115B) described above.

[0063] The gas opening (215B) defines a first inner edge (253) and a second inner edge (254) of the horizontal portion (123). The gas opening (215B) includes an opening length (L ₂ ) between the first inner edge (253) and the second inner edge (254). The first inner edge (253) and the second inner edge (254) extend inwardly from the inner surface (125) of the vertical portion (121). The first inner edge (253) and the second inner edge (254) are curved in a horizontal plane. The opening length (L ₂ ) is less than 15 inches, such as in a range of 0.1 inch to 12 inches. In one example, the opening length (L ₂ ) is 4 inches. In this example, the aperture length (L ₂ ) is 12 inches.

[0064] FIG. 3 is a schematic plan view of a substrate processing chamber (300) according to one implementation. Aspects of the substrate processing chamber (300) include many of the same aspects, features, components and characteristics of the substrate processing chamber (100) described above. Aspects of the substrate processing chamber (300) can be used as part of the substrate processing chamber (100) described above.

[0065] A plurality of brackets (309A-309D) are mounted to each of the four side walls (102) of the chamber body (105). Each bracket of the plurality of brackets (309A-309D) includes a plurality of gas openings (315A-315D) formed therein. The gas openings (315A-315D) on each bracket of the plurality of brackets (309A-309D) are spaced apart along the longitudinal length (LD ₁ ) of each bracket. The gas openings (315A-315D) are spaced such that portions (360A-360D) of the horizontal portion (123) of each bracket are positioned between the individual gas openings (315A-315D) of each bracket.

[0066] As an example, the first gas opening (315A) of the first bracket (309A) is spaced apart from the second gas opening (315A) along the longitudinal length (LD ₁ ) of the first bracket (309A). A portion (360A) of the horizontal portion (123) is positioned between the first gas opening (315A) and the second gas opening (315A) of the first bracket (309A).

[0067] The portions (360A-360D) of each bracket may have the same longitudinal lengths or may have different longitudinal lengths. The gas openings (315A-315D) of each bracket may have the same longitudinal lengths or may have different longitudinal lengths.

[0068] The present disclosure contemplates that a plurality of gas openings (315A-315D) may be included on each of the four brackets (309A-309D), as illustrated in FIG. 3. The present disclosure also contemplates that the plurality of gas openings (315A-315D) may be included on two of the four brackets (309A-309D), such as a first bracket (309A) on the first short side (147A) and a second bracket (309B) on the second short side (147B).

[0069] FIG. 4 is a schematic plan view of a substrate processing chamber (400) according to one implementation. Aspects of the substrate processing chamber (400) include many of the same aspects, features, components and characteristics of the substrate processing chamber (100) described above. Aspects of the substrate processing chamber (400) can be used as part of the substrate processing chamber (100) described above.

[0070] A plurality of brackets (409A-409D) are mounted to each of the four side walls (102) of the chamber body (105). Each bracket of the plurality of brackets (409A-409D) includes a plurality of gas openings (415A-415D) formed therein. The gas openings (415A-415D) on each bracket of the plurality of brackets (409A-409D) are spaced apart along the longitudinal length (LD ₁ ) of each bracket. The gas openings (415A-415D) are spaced such that portions (460A-460D) of the horizontal portion (123) of each bracket are positioned between the individual gas openings (415A-415D) of each bracket. The gas openings (415A-415D) of each individual bracket are disposed between the inner surface (135) of the horizontal portion (123) of the individual bracket and the inner surface (125) of the vertical portion (121). Portions (470A-470D) of the horizontal portion (123) of each bracket of the plurality of brackets (409A-409D) are disposed inside the individual gas openings (415A-415D).

[0071] As an example, the first gas opening (415A) of the first bracket (409A) is spaced apart from the second gas opening (415A) along the longitudinal length (LD ₁ ) of the first bracket (409A). The portion (460A) of the horizontal portion (123) is disposed between the first gas opening (415A) and the second gas opening (415A) of the first bracket (409A). The first gas opening (415A) and the second gas opening (415A) are disposed between the inner surface (125) of the vertical portion (121) of the first bracket (409A) and the inner surface (135) of the horizontal portion (123). The first part (470A) of the horizontal part (123) is positioned inside the first gas opening (415A), and the second part (470A) of the horizontal part (123) is positioned inside the second gas opening (415A).

[0072] The portions (460A-460D) of each bracket may have the same longitudinal lengths or may have different longitudinal lengths. The gas openings (415A-415D) of each bracket may have the same longitudinal lengths or may have different longitudinal lengths.

[0073] The present disclosure contemplates that a plurality of gas openings (415A-415D) may be included on each of the four brackets (409A-409D), as illustrated in FIG. 4. The present disclosure also contemplates that the plurality of gas openings (415A-415D) may be included on two of the four brackets (409A-409D), such as a first bracket (409A) on the first short side (147A) and a second bracket (409B) on the second short side (147B).

[0074] The present disclosure contemplates that aspects, components, features and/or characteristics of the substrate processing chambers (100-400), brackets (109-409), and/or gas openings (115-415) may be combined.

[0075] Benefits of the present disclosure include uniform distribution of cleaning gases; faster cleaning rates; less consumption of cleaning gas materials; operating efficiency; reduced operating costs; and increased throughput.

[0076] Aspects of the present disclosure include a substrate processing chamber having brackets; brackets having gas apertures formed therein, the gas apertures allowing cleaning gases to flow through the gas apertures; gas apertures formed in horizontal portions of the brackets; and L-shaped brackets. It is contemplated that one or more of these aspects disclosed herein may be combined. Moreover, it is contemplated that one or more of these aspects may include some or all of the benefits noted above.

[0077] While the foregoing is directed to embodiments of the present disclosure, other and additional embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the following claims.

Claims (15)

As a substrate processing chamber,
A chamber body, wherein the chamber body comprises one or more side walls, each of the one or more side walls including an inner surface;
Pedestal - said pedestal including a supporting surface;
Processing volume above the pedestal;
Lower volume below the above pedestal;
A bracket mounted on the inner surface of a side wall of one or more of the side walls, said bracket comprising:
vertical part,
horizontal part,
Part 1 and Part 2,
A longitudinal length extending from the first end to the second end,
A gas opening formed along the longitudinal length of the bracket between the first end and the second end,
The horizontal portion includes at least one surface parallel to the supporting surface of the pedestal,
The gas opening allows gas to flow from the processing volume through the gas opening into the lower volume; and
Including a movable shadow frame so as to contact and not to contact the above bracket,
Substrate processing chamber. In the first paragraph,
The above horizontal portion protrudes at least partially inwardly from the inner surface,
Substrate processing chamber. In the second paragraph,
The above vertical portion includes an inner surface and an outer surface,
The above horizontal portion includes an upper surface and a lower surface, and
The above vertical portion intersects the above horizontal portion to form an L-shape of the bracket,
Substrate processing chamber. In the third paragraph,
The above gas opening comprises a slot formed on the inner surface of the horizontal portion, and the inner surface of the horizontal portion is rounded.
Substrate processing chamber. In the third paragraph,
The above gas opening is arranged between the inner surface of the horizontal portion and the inner surface of the vertical portion.
Substrate processing chamber. In the third paragraph,
The bracket comprises one or more protrusions protruding from the outer surface of the vertical portion and into one or more recesses formed on the inner surface of the side walls of the one or more side walls.
Substrate processing chamber. In the first paragraph,
The bracket further includes a second gas opening formed between the first end and the second end of the bracket,
The second gas opening allows the gas to flow from the processing volume through the second gas opening into the lower volume,
The second gas opening is spaced apart from the gas opening along the longitudinal length of the bracket.
Substrate processing chamber. In the first paragraph,
wherein said one or more side walls comprise four side walls defining a rectangular shape of said chamber body,
The above substrate processing chamber further includes a second bracket, a third bracket, and a fourth bracket,
Each of the second bracket, the third bracket, and the fourth bracket includes a gas opening, and
The above bracket, the second bracket, the third bracket, and the fourth bracket are spaced apart from each other so that a plurality of gaps are arranged at corners of the chamber body.
Substrate processing chamber. In the first paragraph,
The bracket is positioned between the sidewalls of the one or more sidewalls and the shadow frame of the substrate processing chamber.
Substrate processing chamber. A method of operating a substrate processing chamber, comprising:
A step of processing a substrate placed on a support surface of a pedestal, wherein the pedestal is placed in a chamber body;
a step of removing the substrate from the support surface; and
A step of directing one or more cleaning gases over the support surface of the pedestal and into gas openings formed in a bracket mounted on the chamber body,
The above gas opening is arranged along the longitudinal length of the bracket extending from the first end of the bracket to the second end,
A method of operating a substrate processing chamber. In Article 10,
Further comprising the step of moving the shadow frame into contact with the bracket prior to directing one or more cleaning gases over the support surface of the pedestal and into the gas opening;
A method of operating a substrate processing chamber. In Article 11,
further comprising the step of flowing one or more of the cleaning gases from the gas opening into a lower volume of the substrate processing chamber;
A method of operating a substrate processing chamber. In Article 11,
At least a portion of said gas opening is between said shadow frame and said chamber body in a horizontal plane,
A method of operating a substrate processing chamber. A method of operating a substrate processing chamber, comprising:
A step of processing a substrate placed in a processing volume with a shadow frame positioned at a gap from one or more brackets mounted on a chamber body;
a step of moving the shadow frame so as to come into contact with one or more brackets mounted on the chamber body; and
Comprising the step of flowing one or more cleaning gases into the processing volume,
The step of flowing one or more of the cleaning gases is:
A step of flowing said one or more cleaning gases through one or more gas openings formed in a longitudinal length extending from a first end to a second end of each of said one or more brackets,
A method of operating a substrate processing chamber. In Article 14,
further comprising the step of flowing said one or more cleaning gases from said one or more gas openings into a lower volume of said substrate processing chamber;
A method of operating a substrate processing chamber.