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KR102700929B1 - LED measuring device - Google Patents

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KR102700929B1
KR102700929B1 KR1020210183959A KR20210183959A KR102700929B1 KR 102700929 B1 KR102700929 B1 KR 102700929B1 KR 1020210183959 A KR1020210183959 A KR 1020210183959A KR 20210183959 A KR20210183959 A KR 20210183959A KR 102700929 B1 KR102700929 B1 KR 102700929B1
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micro led
measuring device
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정탁
박준범
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한국광기술원
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0433—Sockets for IC's or transistors
    • G01R1/0441—Details
    • G01R1/0466—Details concerning contact pieces or mechanical details, e.g. hinges or cams; Shielding
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes
    • G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2863—Contacting devices, e.g. sockets, burn-in boards or mounting fixtures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2889—Interfaces, e.g. between probe and tester

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Abstract

본 발명은 LED 측정장치에 관한 것으로서, 더욱 상세하게는 크기가 매우 작은 마이크로 LED 칩에 대한 컨택 및 EL 측정을 간편하게 할 수 있는 LED 측정장치에 관한 것이다.
본 발명에 따른 LED 측정장치는 엘라스토머 소재를 적용하여 탄력이 있는 컨택 장치를 통해 마이크로 LED 칩의 사이즈에 관계없이 컨택이 가능하고, 웨이퍼의 휘어짐 현상(보잉)에도 확실하게 모든 마이크로 LED 칩에 대한 접촉 및 EL 측정이 가능함과 동시에, 대량의 마이크로 LED 칩에 대한 EL 측정이 가능한 장점이 있다.The present invention relates to an LED measuring device, and more specifically, to an LED measuring device that can easily perform contact and EL measurements on a very small micro LED chip.
The LED measuring device according to the present invention has the advantage of being able to contact regardless of the size of the micro LED chip through an elastic contact device using an elastomeric material, and of being able to reliably contact and measure EL for all micro LED chips even when the wafer is bowed, while also being able to measure EL for a large number of micro LED chips.

Figure R1020210183959
Figure R1020210183959

Description

LED 측정장치{LED measuring device}LED measuring device

본 발명은 LED 측정장치에 관한 것으로서, 더욱 상세하게는 크기가 매우 작은 마이크로 LED 칩에 대한 컨택 및 EL 측정을 간편하게 할 수 있는 LED 측정장치에 관한 것이다.The present invention relates to an LED measuring device, and more specifically, to an LED measuring device that can easily perform contact and EL measurements on a very small micro LED chip.

차세대 디스플레이로 주목받는 마이크로 LED 디스플레이는 100 μm 이하 단위의 LED 칩 자체를 발광재료로 사용하는 디스플레이로서, 기존의 OLED와 LCD 대비 전력효율성, 명암비, 반응속도, 시야각, 밝기, 한계 해상도, 수명 등에서 모두 월등한 스펙을 가진다. 이러한 장점으로 인해 마이크로 LED를 다양한 형태의 디스플레이 장치에 적용하기 위한 연구들이 진행 중에 있다.Micro LED display, which is attracting attention as a next-generation display, is a display that uses LED chips of 100 μm or less as light-emitting materials, and has superior specifications in power efficiency, contrast ratio, response speed, viewing angle, brightness, limit resolution, lifespan, etc. compared to existing OLEDs and LCDs. Due to these advantages, research is being conducted to apply micro LEDs to various types of display devices.

이때, 마이크로 LED 칩은 반도체 웨이퍼 상에 에피 소재를 성장시켜 제조될 수 있는데, 이러한 마이크로 LED 칩은 인터포저 및 전사 등의 제조 공정을 거쳐 디스플레이 장치에 적용 가능한 형태로 마련될 수 있다.At this time, micro LED chips can be manufactured by growing epi materials on a semiconductor wafer, and these micro LED chips can be prepared in a form applicable to display devices through manufacturing processes such as interposer and transfer.

한편, 제조중이거나 출하 전인 디스플레이는 해당 디스플레이를 구성하는 소자의 품질을 검사하는 전수검사 공정이 필수적으로 수반되어야 한다. 참고로, 본 발명에서는 반도체 웨이퍼 상에 칩 단위의 마이크로 LED가 구성되어 있는 형태의 검사 대상체에 대한 전수검사 공정에 한하여 언급하고자 한다.Meanwhile, displays that are being manufactured or before shipment must necessarily undergo a full inspection process to inspect the quality of the elements that make up the display. For reference, the present invention will only refer to a full inspection process for an inspection target in the form of a micro LED chip unit configured on a semiconductor wafer.

마이크로 LED뿐 아니라 기존 LED에 대한 전수검사 공정에는 대표적으로 전기적 특성 검사와 광학적 특성 검사가 포함될 수 있다. 이때, 전기적 특성 검사는 LED에 구비된 +, -전극에 복수의 프로브 핀을 접촉시켜, LED에 전기적인 신호를 인가하고, LED를 통하여 흐르는 전류 및 전압 등의 전기적 특성을 측정하는 것이며, 광학적 특성 검사는 LED에 구비된 +, -전극에 복수의 프로브 핀을 접촉시켜, LED에 전기적인 신호를 인가할 때, 발광하는 LED의 광량, 광 스펙트럼 등의 광학적 특성을 측정하는 것이다. 이와 같은 검사공정을 통해 LED의 정상 동작여부 및 양품 판단이 이루어질 수 있는 것이다. The comprehensive inspection process for not only micro LEDs but also existing LEDs may typically include electrical characteristic inspection and optical characteristic inspection. At this time, the electrical characteristic inspection is to contact multiple probe pins to the + and - electrodes provided on the LED, apply an electrical signal to the LED, and measure the electrical characteristics such as the current and voltage flowing through the LED, and the optical characteristic inspection is to contact multiple probe pins to the + and - electrodes provided on the LED, apply an electrical signal to the LED, and measure the optical characteristics such as the amount of light emitted by the LED and the optical spectrum. Through this inspection process, it is possible to determine whether the LED is operating normally and whether it is a good product.

그러나, 마이크로 LED의 경우, 하나의 마이크로 LED 칩 크기가 수십 μm에 이르고, 이웃한 마이크로 LED 칩들 상호간 간격이 매우 협소하여, 단일의 반도체 웨이퍼 상에 실장된 전체적인 마이크로 LED에 대한 전수검사 공정을 수행하는데 오랜 시간이 소요될 수밖에 없고, 마이크로 LED가 아닌 기존 LED에 특화된 검사 장비가 해당 공정에 적용되기에는 어려움이 존재한다.However, in the case of micro LEDs, the size of a single micro LED chip is several tens of μm, and the gap between adjacent micro LED chips is very narrow, so it inevitably takes a long time to perform a comprehensive inspection process on all micro LEDs mounted on a single semiconductor wafer, and it is difficult to apply inspection equipment specialized for existing LEDs, not micro LEDs, to the process.

좀더 구체적인 예시를 들자면, 반도체 웨이퍼 내에 수 십만개 이상의 마이크로 LED가 구성될 수 있는데, 전수검사 시 하나의 단위 LED를 검사한 후 다른 단위 LED에 프로브 핀을 이동 접속시켜 가며 반도체 웨이퍼 내모든 마이크로 LED에 대한 전수검사를 순차적으로 수행하게 되므로 검사시간이 많이 소요될 수밖에 없는 문제가 있다.To give a more specific example, a semiconductor wafer may contain hundreds of thousands of micro LEDs, and during a full inspection, after inspecting one unit LED, the probe pins are moved to connect to other unit LEDs to sequentially inspect all micro LEDs in the semiconductor wafer, which inevitably takes a long time to inspect.

대한민국 등록특허 제10-1199718호Republic of Korea Patent No. 10-1199718 대한민국 등록특허 제10-2286322호Republic of Korea Patent No. 10-2286322 대한민국 등록특허 제10-2281948호Republic of Korea Patent No. 10-2281948

본 발명은 상기와 같은 종래의 문제를 해결하기 위한 것으로서, 엘라스토머 소재를 적용하여 탄력이 있는 컨택 장치를 통해 마이크로 LED 칩의 사이즈에 관계없이 컨택이 가능하여 마이크로 LED 칩에 대한 EL 측정이 가능함과 동시에, 대량의 마이크로 LED 칩에 대한 EL 측정이 가능한 LED 측정장치를 제공하는데 그 목적이 있다.The present invention is intended to solve the above-described conventional problems, and provides an LED measuring device capable of measuring EL for a micro LED chip regardless of its size by applying an elastic contact device using an elastomeric material, and capable of measuring EL for a large number of micro LED chips.

상기와 같은 목적을 달성하기 위한 본 발명에 따른 LED 측정장치는 마이크로 LED 칩을 EL 방식으로 검사하기 위한 것으로서, 기판에 라인상으로 배열된 복수의 마이크로 LED 칩 각각의 양전극에 병렬 접속되고, 전원을 공급하는 제1리드가 연결되는 제1 라인컨택부와; 기판에 라인상으로 배열된 복수의 마이크로 LED 칩 각각의 음전극에 병렬 접속되고, 전원을 공급하는 제2리드가 연결되는 제2 라인컨택부;를 포함하고, 상기 제1 라인컨택부 및 상기 제2 라인컨택부 각각은 상기 마이크로 LED 칩들의 배열 길이와 대응되는 길이를 가지도록 연장되고 상하방향으로 일정 두께를 가지도록 연장되며 탄성을 가지도록 엘라스토머 소재로 형성된 지지층과, 상기 지지층의 하면에 형성되고, 전기전도성을 가지도록 메탈소재로 형성된 컨택층을 포함하는 것을 특징으로 한다.In order to achieve the above object, the LED measuring device according to the present invention is for inspecting a micro LED chip using an EL method, and includes: a first line contact part connected in parallel to the positive electrodes of each of a plurality of micro LED chips arranged in a line on a substrate and to which a first lead for supplying power is connected; and a second line contact part connected in parallel to the negative electrodes of each of a plurality of micro LED chips arranged in a line on a substrate and to which a second lead for supplying power is connected; and each of the first line contact part and the second line contact part is characterized in that it includes a support layer formed of an elastomeric material to have an elasticity and to have a length corresponding to the array length of the micro LED chips and to have a constant thickness in the vertical direction, and a contact layer formed on a lower surface of the support layer and to have electrical conductivity and to which the metal material is connected.

상기 컨택층은 상기 마이크로 LED 칩의 전극에 접촉되는 저면이 평탄하게 형성된 것을 특징으로 한다.The above contact layer is characterized in that the lower surface that comes into contact with the electrode of the micro LED chip is formed flat.

상기 컨택층은 상기 마이크로 LED 칩의 전극에 접촉되는 하부에 상기 컨택층의 길이방향을 따라 돌기부와 인입홈이 반복되는 요철부가 형성된 것을 특징으로 한다.The above contact layer is characterized in that a protruding portion and a recessed portion are formed along the longitudinal direction of the contact layer at a lower portion that contacts the electrode of the micro LED chip.

상기 요철부는 삼각파형 또는 구형파형 또는 정현파형을 이루도록 형성된 것을 특징으로 한다.The above-mentioned uneven portion is characterized by being formed to form a triangular waveform, a square waveform, or a sinusoidal waveform.

상기 돌기부들 사이의 간격은 일 측 마이크로 LED 칩의 전극과 타 측 마이크로 LED 칩의 전극 사이의 간격보다 작게 설정된 것을 특징으로 한다.The spacing between the above protrusions is characterized by being set smaller than the spacing between the electrodes of one micro LED chip and the electrodes of the other micro LED chip.

본 발명에 따른 LED 측정장치는 엘라스토머 소재를 적용하여 탄력이 있는 컨택 장치를 통해 마이크로 LED 칩의 사이즈에 관계없이 컨택이 가능하고, 웨이퍼의 휘어짐 현상(보잉)에도 확실하게 모든 마이크로 LED 칩에 대한 접촉 및 EL 측정이 가능함과 동시에, 대량의 마이크로 LED 칩에 대한 EL 측정이 가능한 장점이 있다.The LED measuring device according to the present invention has the advantage of being able to contact regardless of the size of the micro LED chip through an elastic contact device using an elastomeric material, and of being able to reliably contact and measure EL for all micro LED chips even when the wafer is bowed, while also being able to measure EL for a large number of micro LED chips.

도 1은 본 발명에 따른 LED 측정장치를 나타낸 측면도.
도 2는 본 발명에 따른 LED 측정장치를 나타낸 정면도.
도 3은 본 발명에 따른 LED 측정장치를 나타낸 사시도.
도 4는 본 발명에 따른 LED 측정장치의 다른 실시 예에 따른 컨택층을 나타낸 측면도.
도 5는 본 발명에 따른 LED 측정장치의 또 다른 실시 예에 따른 컨택층을 나타낸 측면도.Figure 1 is a side view showing an LED measuring device according to the present invention.
Figure 2 is a front view showing an LED measuring device according to the present invention.
Figure 3 is a perspective view showing an LED measuring device according to the present invention.
FIG. 4 is a side view showing a contact layer according to another embodiment of an LED measuring device according to the present invention.
FIG. 5 is a side view showing a contact layer according to another embodiment of an LED measuring device according to the present invention.

이하, 첨부된 도면을 참조하면서 본 발명의 바람직한 실시 예에 따른 LED 측정장치에 대하여 상세하게 설명한다. Hereinafter, an LED measuring device according to a preferred embodiment of the present invention will be described in detail with reference to the attached drawings.

도 1 내지 도 5에는 본 발명에 따른 LED 측정장치(100)가 도시되어 있다. 도 1 내지 도 5를 참조하면, 본 발명에 따른 LED 측정장치(100)는 마이크로 LED 칩(20)을 EL 방식으로 검사하기 위한 것으로서, 기판(10)에 라인상으로 배열된 복수의 마이크로 LED 칩(20) 각각의 양전극(21)에 병렬 접속되고, 전원을 공급하는 제1리드가 연결되는 제1 라인컨택부(110)와; 기판(10)에 라인상으로 배열된 복수의 마이크로 LED 칩(20) 각각의 음전극(22)에 병렬 접속되고, 전원을 공급하는 제2리드가 연결되는 제2 라인컨택부(140);를 포함하고, 상기 제1 라인컨택부(140) 및 상기 제2 라인컨택부(140) 각각은 상기 마이크로 LED 칩(20)들의 배열 길이와 대응되는 길이를 가지도록 연장되고 상하방향으로 일정 두께를 가지도록 연장되며 탄성을 가지도록 엘라스토머 소재로 형성된 지지층(120, 150)과, 상기 지지층(120, 150)의 하면에 형성되고, 전기전도성을 가지도록 메탈소재로 형성된 컨택층(130, 160)을 포함한다.An LED measuring device (100) according to the present invention is illustrated in FIGS. 1 to 5. Referring to FIGS. 1 to 5, an LED measuring device (100) according to the present invention is for inspecting a micro LED chip (20) in an EL manner, and includes a first line contact portion (110) connected in parallel to positive electrodes (21) of each of a plurality of micro LED chips (20) arranged in a line on a substrate (10), and a first lead for supplying power is connected; A second line contact portion (140) is connected in parallel to the negative electrode (22) of each of a plurality of micro LED chips (20) arranged in a line on a substrate (10) and to which a second lead for supplying power is connected; and each of the first line contact portion (140) and the second line contact portion (140) includes a support layer (120, 150) formed of an elastomeric material to have elasticity and to have a predetermined thickness in the vertical direction and to have a length corresponding to the array length of the micro LED chips (20), and a contact layer (130, 160) formed on the lower surface of the support layer (120, 150) and formed of a metal material to have electrical conductivity.

본 발명에 따른 LED 측정장치(100)의 상기 컨택층(130, 160)은 상기 마이크로 LED 칩(20)의 전극(21, 22)에 접촉되는 저면이 평탄하게 형성된다.The contact layer (130, 160) of the LED measuring device (100) according to the present invention is formed so that the lower surface that comes into contact with the electrode (21, 22) of the micro LED chip (20) is flat.

본 발명에 따른 LED 측정장치(100)의 상기 컨택층(130, 160)은 상기 마이크로 LED 칩(20)의 전극(21, 22)에 접촉되는 하부에 상기 컨택층(130, 160)의 길이방향을 따라 돌기부와 인입홈이 반복되는 요철부가 형성된다.The contact layer (130, 160) of the LED measuring device (100) according to the present invention has a protruding portion and a recessed portion formed along the longitudinal direction of the contact layer (130, 160) in the lower portion that comes into contact with the electrode (21, 22) of the micro LED chip (20).

본 발명에 따른 LED 측정장치(100)의 상기 요철부는 도 4에 도시된 바와 같이 삼각파형의 돌기부(131) 및 인입홈(132)으로 구성될 수 있다.The uneven portion of the LED measuring device (100) according to the present invention may be composed of a triangular wave-shaped protrusion (131) and an inlet groove (132) as shown in FIG. 4.

또한, 본 발명에 따른 LED 측정장치(100)의 상기 요철부는 도 5에 도시된 바와 같이 구형파형의 돌기부(133) 및 인입홈(134)으로 구성될 수 있다.In addition, the uneven portion of the LED measuring device (100) according to the present invention may be composed of a rectangular wave-shaped protrusion (133) and an inlet groove (134) as shown in FIG. 5.

또한, 본 발명에 따른 LED 측정장치(100)의 상기 요철부는 정현파형의 돌기부 및 인입홈으로 구성될 수도 있다.In addition, the uneven portion of the LED measuring device (100) according to the present invention may be composed of a sinusoidal wave-shaped protrusion and an inlet groove.

본 발명에 따른 LED 측정장치의 상기 돌기부(131)들 사이의 간격은 일 측 마이크로 LED 칩(20)의 전극(21, 22)과 타 측 마이크로 LED 칩(21, 22)의 전극 사이의 간격보다 작게 형성된다.The gap between the protrusions (131) of the LED measuring device according to the present invention is formed smaller than the gap between the electrodes (21, 22) of one micro LED chip (20) and the electrodes of the other micro LED chip (21, 22).

상술한 바와 같은 본 발명에 따른 LED 측정장치는 엘라스토머 소재를 적용하여 탄력이 있는 컨택 장치를 통해 마이크로 LED 칩의 사이즈에 관계없이 컨택이 가능하고, 웨이퍼의 휘어짐 현상(보잉)에도 확실하게 모든 마이크로 LED 칩에 대한 접촉 및 EL 측정이 가능함과 동시에, 대량의 마이크로 LED 칩에 대한 EL 측정이 가능한 장점이 있다.The LED measuring device according to the present invention as described above has the advantage of being able to contact regardless of the size of the micro LED chip through an elastic contact device by applying an elastomeric material, and of being able to reliably contact and measure EL for all micro LED chips even when the wafer is bowed, while also being able to measure EL for a large number of micro LED chips.

이상에서 설명한 본 발명에 따른 LED 측정장치는 첨부된 도면을 참조로 설명하였으나 이는 예시적인 것에 불과하며, 당해 기술분야에서 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시 예가 가능하다는 점을 이해할 것이다. The LED measuring device according to the present invention described above has been described with reference to the attached drawings, but this is merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible from this.

따라서, 본 발명의 진정한 기술적 보호의 범위는 첨부된 청구범위의 기술적 사상에 의해서만 정해져야 할 것이다.Therefore, the true scope of technical protection of the present invention should be determined solely by the technical idea of the appended claims.

10 : 기판
20 : 마이크로 LED 칩
21 : 양전극
22 : 음전극
100 : LED 측정장치
110 : 제1 라인컨택부
120, 150 : 지지층
130, 160 : 컨택층
140 : 제2 라인컨택부10 : Substrate
20: Micro LED Chip
21: Positive electrode
22 : Negative electrode
100 : LED measuring device
110: 1st line contact section
120, 150 : Support layer
130, 160: Contact layer
140: 2nd line contact section

Claims (5)

마이크로 LED 칩을 EL 방식으로 검사하기 위한 LED 측정장치에 있어서,
기판에 라인상으로 배열된 복수의 마이크로 LED 칩 각각의 양전극에 병렬 접속되고, 전원을 공급하는 제1리드가 연결되는 제1 라인컨택부와;
기판에 라인상으로 배열된 복수의 마이크로 LED 칩 각각의 음전극에 병렬 접속되고, 전원을 공급하는 제2리드가 연결되는 제2 라인컨택부;를 포함하고,
상기 제1 라인컨택부 및 상기 제2 라인컨택부 각각은 상기 마이크로 LED 칩들의 배열 길이와 대응되는 길이를 가지도록 연장되고 상하방향으로 일정 두께를 가지도록 연장되며 탄성을 가지도록 엘라스토머 소재로 형성된 지지층과, 상기 지지층의 하면에 형성되고, 전기전도성을 가지도록 메탈소재로 형성된 컨택층을 포함하고,
상기 컨택층은 상기 마이크로 LED 칩의 전극에 접촉되는 하부에 상기 컨택층의 길이방향을 따라 돌기부와 인입홈이 반복되는 요철부가 형성되며,
상기 돌기부들 사이의 간격은 일 측 마이크로 LED 칩의 전극과 타 측 마이크로 LED 칩의 전극 사이의 간격보다 작게 설정된 것을 특징으로 하는 LED 측정장치.In an LED measuring device for inspecting micro LED chips using the EL method,
A first line contact portion connected in parallel to the positive electrodes of each of a plurality of micro LED chips arranged in a line on a substrate and connected to a first lead for supplying power;
A second line contact part is connected in parallel to the negative electrode of each of a plurality of micro LED chips arranged in a line on the substrate, and a second lead for supplying power is connected;
Each of the first line contact portion and the second line contact portion includes a support layer formed of an elastomeric material to have elasticity and a contact layer formed on the lower surface of the support layer and formed of a metal material to have electrical conductivity, the support layer having a length corresponding to the array length of the micro LED chips and having a predetermined thickness in the vertical direction.
The contact layer has a protruding portion and a recessed portion formed along the length of the contact layer at the lower portion that contacts the electrode of the micro LED chip, and
An LED measuring device characterized in that the spacing between the protrusions is set smaller than the spacing between the electrodes of one micro LED chip and the electrodes of the other micro LED chip. 삭제delete 삭제delete 제1항에 있어서,
상기 요철부는 삼각파형 또는 구형파형 또는 정현파형을 이루도록 형성된 것을 특징으로 하는 LED 측정장치.In the first paragraph,
An LED measuring device characterized in that the above-mentioned uneven portion is formed to form a triangular waveform, a square waveform, or a sine waveform. 삭제delete
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