[go: up one dir, main page]

KR102689406B1 - The space transformer for the probe card - Google Patents

The space transformer for the probe card Download PDF

Info

Publication number
KR102689406B1
KR102689406B1 KR1020180141979A KR20180141979A KR102689406B1 KR 102689406 B1 KR102689406 B1 KR 102689406B1 KR 1020180141979 A KR1020180141979 A KR 1020180141979A KR 20180141979 A KR20180141979 A KR 20180141979A KR 102689406 B1 KR102689406 B1 KR 102689406B1
Authority
KR
South Korea
Prior art keywords
electrode pad
probe card
discharge hole
conversion unit
space conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020180141979A
Other languages
Korean (ko)
Other versions
KR20200057494A (en
Inventor
이재환
이정미
정희석
Original Assignee
주식회사 기가레인
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 기가레인 filed Critical 주식회사 기가레인
Priority to KR1020180141979A priority Critical patent/KR102689406B1/en
Priority to CN201921549363.5U priority patent/CN211374848U/en
Publication of KR20200057494A publication Critical patent/KR20200057494A/en
Application granted granted Critical
Publication of KR102689406B1 publication Critical patent/KR102689406B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07364—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch
    • G01R1/07378—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch using an intermediate adapter, e.g. space transformers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

본 발명은 프로브카드용 공간변환부에 관한 것으로서, 접촉 검사를 위한 프로브카드의 전극 재배선을 위한 공간변환부에 있어서, 비전도성 재질로 구성되는 절연부; 상기 절연부 상부에 형성되는 제1 전극패드; 상기 절연부 하부에 형성되는 제2 전극패드; 상기 제1 전극패드 및 상기 제2 전극패드를 전기적으로 연결하는 배선부; 상기 제1 전극패드를 수직으로 관통하는 제1 배출홀; 을 포함한다.The present invention relates to a space conversion unit for a probe card. The space conversion unit for rewiring electrodes of a probe card for contact inspection includes: an insulating unit made of a non-conductive material; a first electrode pad formed on the insulating part; a second electrode pad formed below the insulating part; a wiring portion electrically connecting the first electrode pad and the second electrode pad; a first discharge hole vertically penetrating the first electrode pad; Includes.

Description

프로브카드용 공간변환부{The space transformer for the probe card}The space transformer for the probe card}

본 발명은 프로브카드용 공간변환부에 관한 것이다.The present invention relates to a space conversion unit for a probe card.

도 1에 도시된 바와 같이, 접촉 검사를 위한 프로브카드는 전극 재배선을 위한 공간변환부(10)에 있어서, 공간변환부(10)는 배선부(400)와 전극패드(210,220) 사이를 전기적으로 연결하는 비아홀(510,520)을 포함한다.As shown in FIG. 1, the probe card for contact inspection has a spatial conversion unit 10 for electrode rewiring, and the spatial conversion unit 10 electrically connects the wiring unit 400 and the electrode pads 210 and 220. It includes via holes (510,520) connecting to.

비아홀(510,520)은 전도성 재질을 충진하는 과정에서 공기 또는 이물질(20)(이하 이물질(20)로 통칭)을 내포하게 된다.The via holes 510 and 520 contain air or foreign substances 20 (hereinafter collectively referred to as foreign substances 20) during the process of filling them with a conductive material.

이물질(20)은 겉으로는 문제가 없다가 프로브카드가 고온 환경 검사를 수행할 때 이물질(20)이 팽창하여 전극패드(210,220)를 밀어내는 문제점이 있다.The foreign matter 20 appears to be fine on the outside, but when the probe card performs a high-temperature environmental test, the foreign matter 20 expands and pushes out the electrode pads 210 and 220.

이러한 문제점은, 프로브카드의 접촉 정렬을 틀어지게 하는 문제점이 있고, 심한 경우 전극패드(210,220)와 비아홀(510,520)의 접촉이 분리되므로 정상적 검사 수행을 불가능하게 하는 문제점이 있다.This problem has the problem of distorting the contact alignment of the probe card, and in severe cases, the contact between the electrode pads 210 and 220 and the via holes 510 and 520 is separated, making normal inspection impossible.

본 발명은 프로브카드용 공간변환부를 제공하는데 그 목적이 있다.The purpose of the present invention is to provide a space conversion unit for a probe card.

본 발명의 실시예에 따른 프로브카드용 공간변환부는, 접촉 검사를 위한 프로브카드의 전극 재배선을 위한 공간변환부에 있어서, 비전도성 재질로 구성되는 절연부; 상기 절연부 상부에 형성되는 제1 전극패드; 상기 절연부 하부에 형성되는 제2 전극패드; 상기 제1 전극패드 및 상기 제2 전극패드를 전기적으로 연결하는 배선부; 상기 제1 전극패드를 수직으로 관통하는 제1 배출홀; 을 포함한다.A space conversion unit for a probe card according to an embodiment of the present invention includes an insulation unit made of a non-conductive material in a space conversion unit for rewiring electrodes of a probe card for contact testing; a first electrode pad formed on the insulating part; a second electrode pad formed below the insulating part; a wiring portion electrically connecting the first electrode pad and the second electrode pad; a first discharge hole vertically penetrating the first electrode pad; Includes.

상기 배선부는, 상기 제1 전극패드의 하부 위치의 상기 절연부에 매몰되도록 전도성 재질로 형성되는 제1 비아홀; 및 상기 제2 전극패드의 상부 위치의 상기 절연부에 매몰되도록 전도성 재질로 형성되는 제2 비아홀; 를 포함한다.The wiring portion includes a first via hole formed of a conductive material to be buried in the insulating portion located below the first electrode pad; and a second via hole formed of a conductive material to be buried in the insulating portion located above the second electrode pad. Includes.

상기 제1 배출홀은 상기 제1 비아홀이 형성된 반경에 적어도 일부가 겹치도록 위치하는 것을 특징으로 한다.The first discharge hole is positioned so that at least part of the radius of the first via hole overlaps.

상기 제1 배출홀은 다수개가 형성되고, 근접하여 위치하는 상기 제1 배출홀 간의 이격 거리는 상기 제1 배출홀 지름의 1.5배 이상인 것을 특징으로 한다.A plurality of first discharge holes are formed, and the separation distance between the first discharge holes located adjacent to each other is 1.5 times or more than the diameter of the first discharge hole.

상기 제1 배출홀의 지름은 40 μm 이상인 것을 특징으로 한다.The diameter of the first discharge hole is characterized in that it is 40 μm or more.

청구항 1 내지 5에 있어서, 상기 제2 전극패드를 수직으로 관통하는 제2 배출홀; 을 포함한다.The method according to claims 1 to 5, further comprising: a second discharge hole vertically penetrating the second electrode pad; Includes.

이물질(20)이 팽창하더라도 배출홀을 통해 이물질(20)을 방출하므로 전극패드를 이물질(20)이 밀어내는 문제점을 방지하는 효과가 있다.Even if the foreign matter 20 expands, the foreign matter 20 is discharged through the discharge hole, thereby preventing the problem of the foreign matter 20 pushing out the electrode pad.

도 1은 종래의 문제점에 따른 공간변환부의 단면도
도 2는 종래의 문제점에 따른 전극패드의 평면도
도 3은 본 발명의 실시예에 따른 공간변환부의 단면도
도 4는 본 발명의 실시예에 따른 전극패드의 평면도
도 5는 본 발명의 실시예에 따른 전극패드의 평면도Figure 1 is a cross-sectional view of the space conversion unit according to the conventional problem
Figure 2 is a plan view of an electrode pad according to a conventional problem.
Figure 3 is a cross-sectional view of the space conversion unit according to an embodiment of the present invention
4 is a plan view of an electrode pad according to an embodiment of the present invention.
5 is a plan view of an electrode pad according to an embodiment of the present invention.

도 1에 도시된 바와 같이, 접촉 검사를 위한 프로브카드는 전극 재배선을 위한 공간변환부(10)에 있어서, 공간변환부(10)는 배선부(400)와 전극패드(210,220) 사이를 전기적으로 연결하는 비아홀(510,520)을 포함한다.As shown in FIG. 1, the probe card for contact inspection has a spatial conversion unit 10 for electrode rewiring, and the spatial conversion unit 10 electrically connects the wiring unit 400 and the electrode pads 210 and 220. It includes via holes (510,520) connecting to.

비아홀(510,520)은 전도성 재질을 충진하는 과정에서 공기 또는 이물질(20)(이하 이물질(20)로 통칭)을 내포하게 된다.The via holes 510 and 520 contain air or foreign substances 20 (hereinafter collectively referred to as foreign substances 20) during the process of filling them with a conductive material.

이물질(20)은 겉으로는 문제가 없다가 프로브카드가 고온 환경 검사를 수행할 때 이물질(20)이 팽창하여 전극패드(210,220)를 밀어내는 문제점이 있다.The foreign matter 20 appears to be fine on the outside, but when the probe card performs a high-temperature environmental test, the foreign matter 20 expands and pushes out the electrode pads 210 and 220.

이러한 문제점은, 프로브카드의 접촉 정렬을 틀어지게 하는 문제점이 있고, 심한 경우 전극패드(210,220)와 비아홀(510,520)의 접촉이 분리되므로 정상적 검사 수행을 불가능하게 하는 문제점이 있다.This problem has the problem of distorting the contact alignment of the probe card, and in severe cases, the contact between the electrode pads 210 and 220 and the via holes 510 and 520 is separated, making normal inspection impossible.

이러한 문제점을 해결하기 위해서, 본 발명의 실시예에 따른 프로브카드용 공간변환부(10)는, 도 3에 도시된 바와 같이, 절연부(100), 제1 전극패드(210), 제2 전극패드(220), 배선부(400), 및 제1 배출홀(310)을 포함한다.In order to solve this problem, the space conversion unit 10 for a probe card according to an embodiment of the present invention includes an insulating part 100, a first electrode pad 210, and a second electrode, as shown in FIG. 3. It includes a pad 220, a wiring portion 400, and a first discharge hole 310.

절연부(100)는 비전도성 재질로 구성된다.The insulating portion 100 is made of a non-conductive material.

절연부(100)는 세라믹으로 형성될 수 있다.The insulating portion 100 may be formed of ceramic.

제1 전극패드(210)는 절연부(100) 상부에 형성된다.The first electrode pad 210 is formed on the insulating part 100.

제2 전극패드(220)는 절연부(100) 하부에 형성된다.The second electrode pad 220 is formed below the insulating portion 100.

배선부(400)는 제1 전극패드(210) 및 제2 전극패드(220)를 전기적으로 연결한다.The wiring portion 400 electrically connects the first electrode pad 210 and the second electrode pad 220.

제1 배출홀(310)은 제1 전극패드(210)를 수직으로 관통한다.The first discharge hole 310 penetrates the first electrode pad 210 vertically.

또한, 제1 배출홀(310) 외에도 선택에 따라서 제2 배출홀(320)을 더 포함할 수 있다.Additionally, in addition to the first discharge hole 310, a second discharge hole 320 may be further included depending on selection.

제2 배출홀(320)은 제2 전극패드(220)를 수직으로 관통한다.The second discharge hole 320 penetrates the second electrode pad 220 vertically.

배출홀(310,320)의 일측은 비아홀(510,520)과 닿거나 근접하게 위치되어 배출홀(310,320)을 통해 이물질(20)이 방출(방출은 배출홀을 통해 배출된다는 의미를 포함하고, 배출되지 않고 배출홀(310,320)에 머물게 되는 상태의 의미 또한 포함한다.)된다.One side of the discharge holes (310,320) touches or is located close to the via holes (510,520), so that the foreign matter 20 is discharged through the discharge holes (310,320) (emission includes the meaning of being discharged through the discharge hole, and is discharged without being discharged) It also includes the meaning of the state of staying in the hall (310, 320).

이와 같이, 이물질(20)이 팽창하더라도 배출홀(310,320)을 통해 이물질(20)을 방출하므로 전극패드를 이물질(20)이 밀어내는 문제점을 방지하는 효과가 있다.In this way, even if the foreign matter 20 expands, the foreign matter 20 is discharged through the discharge holes 310 and 320, thereby preventing the problem of the foreign matter 20 pushing out the electrode pad.

본 발명의 실시예에 따른 프로브카드용 공간변환부(10)의 배선부(400)는, 도 3에 도시된 바와 같이, 제1 비아홀(510), 및 제2 비아홀(520)을 포함한다.As shown in FIG. 3, the wiring unit 400 of the space conversion unit 10 for a probe card according to an embodiment of the present invention includes a first via hole 510 and a second via hole 520.

제1 비아홀(510)은 제1 전극패드(210)의 하부 위치의 절연부(100)에 매몰되도록 전도성 재질로 형성된다.The first via hole 510 is formed of a conductive material to be buried in the insulating portion 100 located below the first electrode pad 210.

제2 비아홀(520)은 제2 전극패드(220)의 상부 위치의 절연부(100)에 매몰되도록 전도성 재질로 형성된다.The second via hole 520 is formed of a conductive material to be buried in the insulating portion 100 located above the second electrode pad 220.

제1 배출홀(310)은 제1 비아홀(510)이 형성된 반경에 적어도 일부가 겹치도록 위치할 수 있다.The first discharge hole 310 may be located so that at least a portion of the radius of the first via hole 510 overlaps.

즉, 제1 배출홀(310)은 제1 비아홀(510)이 형성된 반경에는 전기적 접촉을 위해 형성하지 않는 것이 가장 좋으나, 제1 비아홀(510)이 형성된 반경과 이격될수록 이물질(20)의 방출 효과가 낮아 지므로 제1 배출홀(310)은 제1 비아홀(510)이 형성된 반경에 일부만 겹치도록 위치하는 것이 가장 효과가 좋다.In other words, it is best not to form the first discharge hole 310 within the radius where the first via hole 510 is formed for electrical contact. However, as the first discharge hole 310 is spaced apart from the radius where the first via hole 510 is formed, the effect of discharging the foreign matter 20 increases. Since is lowered, it is most effective to position the first discharge hole 310 so that it only partially overlaps the radius where the first via hole 510 is formed.

그러나 앞선 효과의 의미는 효과가 좋은 실시예를 제시한 것으로 반드시 이렇게 해야함을 한정한것은 아니다.However, the meaning of the preceding effect is to present an example with good effect and does not necessarily limit the need to do so.

본 발명의 실시예에 따른 프로브카드용 공간변환부(10)는, 도 4에 도시된 바와 같이, 제1 배출홀(310)은 다수개가 형성되고, 근접하여 위치하는 제1 배출홀(310) 간의 이격 거리는 제1 배출홀(310) 지름의 1.5배 이상일 수 있다.As shown in FIG. 4, the space conversion unit 10 for a probe card according to an embodiment of the present invention has a plurality of first discharge holes 310, and the first discharge holes 310 are located close to each other. The distance between them may be 1.5 times or more than the diameter of the first discharge hole 310.

이때, 제1 배출홀(310)의 지름은 40 μm 이상이다.At this time, the diameter of the first discharge hole 310 is 40 μm or more.

제1 배출홀(310) 간의 이격 거리를 확보하여 전기적 접촉성은 유지하고, 제1 배출홀(310)의 지름을 일정이상으로 함으로써 이물질(20)의 방출 효과는 낮아지지 않도록 할 수 있다.Electrical contact can be maintained by securing the separation distance between the first discharge holes 310, and by setting the diameter of the first discharge hole 310 to a certain level or more, the effect of releasing foreign substances 20 can be prevented from being lowered.

도 4, 5에 도시된 바와 같이, 제1 배출홀(310)은 원 또는 사각 형상으로 형성될 수 있고, 배열하여 배치 가능한 형상이라면 어떠한 형상으로든 형성하는 것이 가능하며, 전극패드(210,220)도 도시된 원 형상외에도 사각 형상으로 형성될 수 있다.As shown in Figures 4 and 5, the first discharge hole 310 can be formed in a circular or square shape, and can be formed in any shape as long as it can be arranged, and the electrode pads 210 and 220 are also shown. In addition to the circular shape, it can be formed in a square shape.

앞서서 설명한 제1 배출홀(310)에 관한 설명은 필요에 따라 제2 배출홀(320)에도 적용될 수 있으며, 이에 대한 설명은 생략한다.The description of the first discharge hole 310 described above may also be applied to the second discharge hole 320 if necessary, and description thereof will be omitted.

10 공간변환부 20 이물질
100 절연부 210 제1 전극패드
220 제2 전극패드 310 제1 배출홀
320 제2 배출홀 400 배선부
510 제1 비아홀 520 제2 비아홀10 Space conversion unit 20 Foreign matter
100 Insulating part 210 First electrode pad
220 2nd electrode pad 310 1st discharge hole
320 2nd discharge hole 400 wiring section
510 1st via hole 520 2nd via hole

Claims (6)

접촉 검사를 위한 프로브카드의 전극 재배선을 위한 공간변환부에 있어서,
비전도성 재질로 구성되는 절연부;
상기 절연부 상부에 형성되는 제1 전극패드;
상기 절연부 하부에 형성되는 제2 전극패드;
상기 제1 전극패드 및 상기 제2 전극패드를 전기적으로 연결하는 배선부;
상기 제1 전극패드를 수직으로 관통하는 제1 배출홀; 및
상기 제2 전극패드를 수직으로 관통하는 제2 배출홀;을 포함하고,
상기 제1 배출홀과 상기 제2 배출홀은, 각각 복수개로 마련되어 복수의 행과 복수의 열로 배열되는, 프로브카드용 공간변환부.In the space conversion unit for electrode rewiring of the probe card for contact inspection,
an insulating part made of a non-conductive material;
a first electrode pad formed on the insulating part;
a second electrode pad formed below the insulating part;
a wiring portion electrically connecting the first electrode pad and the second electrode pad;
a first discharge hole vertically penetrating the first electrode pad; and
It includes a second discharge hole vertically penetrating the second electrode pad,
A space conversion unit for a probe card, wherein the first discharge hole and the second discharge hole are each provided in plural numbers and arranged in a plurality of rows and a plurality of columns. 청구항 1에 있어서,
상기 배선부는,
상기 제1 전극패드의 하부 위치의 상기 절연부에 매몰되도록 전도성 재질로 형성되는 제1 비아홀; 및
상기 제2 전극패드의 상부 위치의 상기 절연부에 매몰되도록 전도성 재질로 형성되는 제2 비아홀; 를 포함하는,
프로브카드용 공간변환부.In claim 1,
The wiring part,
a first via hole formed of a conductive material to be buried in the insulating part located below the first electrode pad; and
a second via hole formed of a conductive material to be buried in the insulating portion located above the second electrode pad; Including,
Space conversion unit for probe card. 청구항 2에 있어서,
상기 제1 배출홀은 상기 제1 비아홀이 형성된 반경에 적어도 일부가 겹치도록 위치하는 것을 특징으로 하는,
프로브카드용 공간변환부.In claim 2,
Characterized in that the first discharge hole is positioned so that at least a portion overlaps the radius where the first via hole is formed.
Space conversion unit for probe card. 청구항 2에 있어서,
복수의 상기 제1 배출홀은, 근접하여 위치하는 상기 제1 배출홀 간의 이격 거리는 상기 제1 배출홀 지름의 1.5배 이상인 것을 특징으로 하는,
프로브카드용 공간변환부.In claim 2,
The plurality of first discharge holes are characterized in that the separation distance between the first discharge holes located in close proximity is 1.5 times or more than the diameter of the first discharge hole,
Space conversion unit for probe card. 청구항 4에 있어서,
상기 제1 배출홀의 지름은 40 μm 이상인 것을 특징으로 하는,
프로브카드용 공간변환부.In claim 4,
Characterized in that the diameter of the first discharge hole is 40 μm or more,
Space conversion unit for probe card. 삭제delete
KR1020180141979A 2018-11-16 2018-11-16 The space transformer for the probe card Active KR102689406B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020180141979A KR102689406B1 (en) 2018-11-16 2018-11-16 The space transformer for the probe card
CN201921549363.5U CN211374848U (en) 2018-11-16 2019-09-18 Space conversion part for probe card

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020180141979A KR102689406B1 (en) 2018-11-16 2018-11-16 The space transformer for the probe card

Publications (2)

Publication Number Publication Date
KR20200057494A KR20200057494A (en) 2020-05-26
KR102689406B1 true KR102689406B1 (en) 2024-07-29

Family

ID=70915330

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180141979A Active KR102689406B1 (en) 2018-11-16 2018-11-16 The space transformer for the probe card

Country Status (2)

Country Link
KR (1) KR102689406B1 (en)
CN (1) CN211374848U (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102594037B1 (en) * 2021-04-29 2023-10-25 (주)샘씨엔에스 Method for impedance matching of space transformer for probe card

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200169725Y1 (en) 1997-07-28 2000-02-01 김영환 Boat for Semiconductor Wafer Deposition Equipment
JP2002196019A (en) 2000-10-25 2002-07-10 Advantest Corp Contact structure, its manufacturing method and probe contact assembly using this
JP2003255023A (en) 2002-02-27 2003-09-10 Seiko Epson Corp Probe card and probe card test method
JP2011064669A (en) * 2009-09-17 2011-03-31 Samsung Electro-Mechanics Co Ltd Space converter for probe card, and method for restoration of space converter
KR101870739B1 (en) 2017-02-28 2018-06-29 와이엠씨 주식회사 Method of manufacturing space transformer for probe card and space transformer for probe card by the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10135595A (en) * 1996-10-31 1998-05-22 Kyocera Corp Circuit board and method of manufacturing the same
JPH10293540A (en) * 1997-04-18 1998-11-04 Sony Corp Display device
JP2005265658A (en) * 2004-03-19 2005-09-29 Tokyo Electron Ltd Probe device adaptable to a plurality of types of testers
JP4757630B2 (en) * 2005-12-28 2011-08-24 日本発條株式会社 Probe card
KR101010675B1 (en) * 2008-12-05 2011-01-24 윌테크놀러지(주) Spatial transducers and probe cards containing them
KR101890812B1 (en) * 2016-09-29 2018-08-22 주식회사 아이에스시 Contact pin for test and contact device for test

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200169725Y1 (en) 1997-07-28 2000-02-01 김영환 Boat for Semiconductor Wafer Deposition Equipment
JP2002196019A (en) 2000-10-25 2002-07-10 Advantest Corp Contact structure, its manufacturing method and probe contact assembly using this
JP2003255023A (en) 2002-02-27 2003-09-10 Seiko Epson Corp Probe card and probe card test method
JP2011064669A (en) * 2009-09-17 2011-03-31 Samsung Electro-Mechanics Co Ltd Space converter for probe card, and method for restoration of space converter
KR101870739B1 (en) 2017-02-28 2018-06-29 와이엠씨 주식회사 Method of manufacturing space transformer for probe card and space transformer for probe card by the same

Also Published As

Publication number Publication date
KR20200057494A (en) 2020-05-26
CN211374848U (en) 2020-08-28

Similar Documents

Publication Publication Date Title
US20110186838A1 (en) Circuit architecture for the parallel supplying during an electric or electromagnetic testing of a plurality of electronic devices integrated on a semiconductor wafer
US20190139840A1 (en) Wafer scale testing and initialization of small die chips
US20210102974A1 (en) Hybrid probe card for testing component mounted wafer
TW201825920A (en) Vertical ultra-low leakage current probe card for dc parameter test
KR102145168B1 (en) Semiconductor device
KR102689406B1 (en) The space transformer for the probe card
CN206331052U (en) Panel structure and electrostatic damage detection system
CN102194795A (en) Test structure of dielectric layer under metal layer
CN102759677B (en) Chip testing structure and testing method
CN110301044B (en) Semiconductor device with a semiconductor layer having a plurality of semiconductor layers
KR20140020627A (en) Method of manufacturing for electric inspection jig
US10663487B2 (en) Low force wafer test probe with variable geometry
CN211122965U (en) Space conversion part for probe card with improved heat radiation
CN113437042B (en) Pad structure, semiconductor test structure and semiconductor test method
CN112510004B (en) Semiconductor packaging structure and manufacturing method thereof
TWM583945U (en) Space transformer for probe card
KR20230142272A (en) Structure of a probe -head with improved integration and a manufacturing method for the same
KR100787745B1 (en) PCM test pattern for semiconductor manufacturing
KR102790096B1 (en) Needle unit for electrical property inspection apparatus
US9521750B2 (en) Printed circuit board of probe card
TWI662678B (en) Test key structure
CN112510003B (en) Semiconductor packaging structure and manufacturing method thereof
US11404352B2 (en) Semiconductor device with through-substrate via and its method of manufacture
JPH0572231A (en) Circuit board inspection electrode device and inspection method
US20050285199A1 (en) Method for producing a semiconductor circuit, and corresponding semiconductor circuit

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20181116

PG1501 Laying open of application
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20211112

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20181116

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20231120

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20240502

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20240724

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20240724

End annual number: 3

Start annual number: 1

PG1601 Publication of registration