KR102682019B1 - Inspection and metrology apparatus, and inspection and metrology method of the same - Google Patents

Abstract

The present invention discloses an inspection and measurement device and an inspection and measurement method thereof. The device includes a stage on which a substrate is provided, a sensor disposed on the stage, an objective lens disposed between the sensor and the stage to project the substrate, and illuminating light onto the substrate through the objective lens. a light source provided, a first bandwidth filter unit disposed between the light source and the objective lens and controlling the wavelength of the illumination light to a first bandwidth to detect a broadband image of the substrate to the sensor, the light source and the objective A second bandwidth filter unit is disposed between the lenses and controls the wavelength of the illumination light to a second bandwidth smaller than the first bandwidth to detect a narrow-band image of the substrate in the sensor.

Description

Inspection and metrology apparatus, and inspection and metrology method of the same}

The present invention relates to an inspection and measurement device and its inspection and measurement method. More specifically, it relates to an inspection and measurement device used in the manufacturing process of a semiconductor device and an inspection and measurement method thereof.

Semiconductor devices are used as core components in telecommunications equipment. With the rapid development of the information and communication field, the high performance and high integration of semiconductor devices are accelerating. In addition, the manufacturing processes of semiconductor devices are being controlled more precisely. Nevertheless, the production yield of semiconductor manufacturing devices is not easily improved.

The problem to be solved by the present invention is to provide an inspection and measurement device that can inspect defects in a substrate and measure surface characteristics of the inspected substrate, and an inspection and measurement method thereof.

The present invention discloses an inspection and measurement device. His device includes a stage on which a substrate is provided; A sensor disposed on the stage; an objective lens disposed between the sensor and the stage to project the substrate; a light source providing illumination light on the substrate through the objective lens; a first bandwidth filter unit disposed between the light source and the objective lens and detecting a wideband image of the substrate by the sensor by controlling a wavelength of the illumination light to a first bandwidth; and a second bandwidth filter unit disposed between the light source and the objective lens, and configured to detect a narrowband image of the substrate in the sensor by controlling the wavelength of the illumination light to a second bandwidth smaller than the first bandwidth.

An inspection and measurement device according to an example of the present invention includes a stage on which a substrate is provided; an objective lens disposed on the stage and projecting the substrate; an image sensor disposed on the objective lens; an alternative lens disposed between the image sensor and the objective lens to form an image of the substrate; a first illumination light source providing first illumination light having a first bandwidth on the substrate to detect a broadband image of the substrate to the sensor; and a second illumination light source providing second illumination light having a second bandwidth less than the first bandwidth on the substrate to cause the sensor to detect a narrowband image of the substrate.

An inspection and measurement method according to an example of the present invention includes recognizing the position of a substrate; determining whether to inspect the substrate for defects; When inspecting a defect in the substrate, providing illumination light of a first bandwidth to the substrate to detect a broadband image having a defect image corresponding to the defect on the substrate; Determining whether to measure surface characteristics of the substrate; and detecting a plurality of narrow-band images by providing the illumination light of a second bandwidth smaller than the first bandwidth on the substrate when measuring surface characteristics of the substrate.

An inspection and measurement device according to an embodiment of the present invention includes a first illumination light source that provides first illumination light of a first bandwidth on a substrate to detect a broadband image to a sensor, and a first illumination light source that is smaller than the first bandwidth on the substrate. and a second illumination light source providing second illumination light with two bandwidths to detect narrowband images. The control unit may analyze broadband images to inspect defects in the substrate and measure surface characteristics of the substrate by analyzing the narrow-band images without moving the inspected substrate.

1 is a diagram showing a semiconductor manufacturing facility equipped with an inspection and measurement device according to the concept of the present invention.
FIG. 2 is a diagram showing an example of the inspection and measurement device of FIG. 1.
FIG. 3 is a diagram showing a broadband image detected by the first reflected light of FIG. 2.
FIGS. 4 and 5 are diagrams showing an example of the imaging aperture of FIG. 2 and the first and second lighting apertures.
FIG. 6 is a diagram showing first to fourth narrowband images detected by the second reflected light of FIG. 2.
FIG. 7 is graphs showing first and second spectra obtained from the first to fourth narrowband images of FIG. 6.
FIG. 8 is a flow chart showing an example of an inspection and measurement method using the inspection and measurement device of FIG. 2.
Figure 9 shows defect images of Figure 3.
FIG. 10 is a flow chart showing an example of an inspection and measurement method using the inspection and measurement device of FIG. 2.
FIG. 11 is a flow chart showing an example of steps in which the defect inspection of FIG. 10 is performed prior to surface property measurement.
FIG. 12 is a flow chart showing an example of a step in which the surface property measurement of FIG. 10 is performed prior to the defect inspection.
13 and 14 are diagrams showing an example of the inspection and measurement device of FIG. 1.
15 and 16 are diagrams showing an example of the inspection and measurement device of FIG. 1.
FIG. 17 is a flow chart showing an inspection and measurement method using the inspection and measurement devices of FIGS. 15 and 16.

Figure 1 shows a semiconductor manufacturing facility 1 equipped with an inspection and measurement device 20 according to the concept of the present invention.

Referring to FIG. 1, the semiconductor manufacturing facility 1 of the present invention may include a unit process device 10 and an inspection and measurement device 20. The unit process device 10 can perform a unit process on a substrate (W in FIG. 2). For example, the unit process may include a thin film deposition process, a photolithography process, an etching process, and a cleaning process. Additionally, the unit process may include a diffusion process, a heat treatment process, and an ion implantation process. The inspection and measurement device 20 can perform an inspection process and a measurement process for the substrate W. For example, the inspection process may be a process of inspecting defects (e.g., particle defects, electrical short defects, line cut defects) on the substrate W. The metrology process may be a process of measuring surface characteristics (e.g., critical dimension (CD) thin film thickness, line width) of the substrate W.

According to one example, the unit process device 10 and the inspection and measurement device 20 may be arranged in a row. The unit process device 10 may be placed at the front of the inspection and measurement device 20. For example, the unit process device 10 may include a thin film deposition device 12, a photolithography device 14, an etching device 16, and a cleaning device 18. The thin film deposition device 12 can form a thin film on the substrate W. The photolithography apparatus 14 may form a photoresist pattern on the substrate W or the thin film. The etching device 16 may etch the thin film of the substrate W based on the photoresist pattern. The cleaning device 18 can clean the substrate W. Alternatively, the unit process device 10 may include a diffusion device, a heat treatment device, and an ion implantation device.

The inspection and measurement device 20 may be placed at the rear of the unit process device 10. The inspection and measurement device 20 can inspect and measure the upper surface of the substrate W on which a unit process has been completed. Alternatively, the inspection and measurement device 20 may be disposed within the unit process device 10. For example, the inspection and measurement device 20 may be disposed between the thin film deposition device 12 and the photolithography device 14 and between the photolithography device 14 and the etching device 16. The inspection and measurement device 20 can inspect whether a unit process is normal. According to one example, the inspection and measurement device 20 may obtain information about the results of a unit process.

Figure 2 shows an example of the inspection and measurement device 20 of Figure 1.

Referring to FIG. 2, the inspection and measurement device 20 may be a device that combines an optical inspection device (e.g., Bright Field Microscope) and an optical measurement device (e.g., spectroscopic ellipsometry, spectroscopic reflectometry). According to one example, the inspection and measurement device 20 includes a stage 30, an objective lens 32, an image sensor 40, an imaging optical system 50, and a first illumination light source 60. , may include a first illumination optical system 70, a second illumination light source 80, a second illumination optical system 90, and a control unit 100.

The stage 30 can accommodate the substrate W. The control unit 100 may control the stage 30 to move the substrate W. During the inspection and measurement process of the substrate W, the stage 30 may be moved in a direction parallel to the substrate W (ex, x direction, y direction).

The objective lens 32 may be placed on the stage 30. The objective lens 32 may magnify and project the substrate W onto the image sensor 40 . For example, the objective lens 32 may have a numerical aperture (NA) of about 0.92.

The image sensor 40 may be placed on the objective lens 32. The image sensor 40 may be disposed on the optical axis 101 of the first and second reflected lights 65 and 85 reflected from the substrate W. The optical axis 101 of the imaging optical system 50 may extend in the third direction (z). The image sensor 40 may detect the image of the substrate W using the first and second reflected lights 65 and 85. The image sensor 40 may include a charge coupled device (CCD) or a CMOS image sensor. Although not shown, the image sensor 40 may have a plurality of pixels arranged in a matrix form. The resolved distance of the image sensor 40 may be inversely proportional to the numerical aperture (NA) of the objective lens 32 and may be proportional to the wavelengths of the first and second reflected lights 65 and 85 ( ex, R=Kλ/NA, R is the resolution distance of the image sensor 40, K=0.5, NA is the numerical aperture of the objective lens 32). When the first and second reflected lights 65 and 85 have a wavelength (λ) of about 200 nm and the objective lens 32 has a numerical aperture (NA) of about 0.92, the image sensor 40 It can have a resolution distance that can distinguish images over about 108nm wide. In addition, the sensitivity of the image sensor 40 may be equal to the incident angle θ of the first and second illumination lights 63 and 83 incident on the substrate W by the objective lens 32. (ex, NA=n sinθ, where NA is the numerical aperture of the objective lens 32, n is the refractive index of air (n=1), and θ is the angle of incidence). When the numerical aperture (NA) of the objective lens 32 is 0.92, the sensitivity of the image sensor 40 and the angle of incidence (θ) of the first and second illumination lights 63 and 83 may each be 66.66. there is.

The imaging optical system 50 may be disposed between the objective lens 32 and the image sensor 40. Here, the 'imaging' of the imaging optical system 50 is a term used to distinguish it from the 'illumination' of the first and second illumination optical systems 70 and 90, and the imaging side ) can be understood and/or interpreted. According to one example, the imaging optical system 50 may include imaging relay lenses 51, an imaging polarizer 52, an imaging aperture 53, and an alternative lens 54. The imaging relay lenses 51 may enable adjustment of the distance between the alternative lenses 54 of the objective lens 32. The imaging polarizer 52 may be disposed between the imaging relay lenses 51 and the image sensor 40. The imaging polarizer 52 may polarize the first and second reflected lights 65 and 85. The first and second reflected lights 65 and 85 may be linearly polarized or elliptically polarized.

The imaging aperture 53 may be disposed between the imaging polarizer 52 and the image sensor 40. The first and second reflected lights 65 and 85 may pass through the imaging aperture 53. The imaging aperture 53 may define the beam size of each of the first and second reflected lights 65 and 85. According to one example, the imaging aperture 53 may include a first diaphragm 55 and first and second imaging holes 56 and 57 within the first diaphragm 55.

The first diaphragm 55 may include a circular black film. The first diaphragm 55 may absorb the first and second reflected lights 65 and 85. The first and second imaging holes 56 and 57 may be separated on both sides of the first diaphragm 55. When the first imaging hole 56 is disposed on one side (ex, left) of the first direction (x), the second imaging hole 57 is disposed on the other side (ex, right) of the first direction (x). can be placed. The present invention is not limited to this, and the positions of the first and second imaging holes 56 and 57 may be changed. The first imaging hole 56 allows the first reflected light 65 to pass through, and the second imaging hole 57 allows the second reflected light 85 to pass through. The first and second imaging holes 56 and 57 may determine beam sizes of the first and second reflected lights 65 and 85.

The alternative lens 54 may be disposed between the imaging aperture 53 and the image sensor 40. The alternative lens 54 may form an image of the first and second reflected lights 65 and 85 on the image sensor 40 and detect the image of the substrate W on the image sensor 40 . The alternative lens 54 may include a tube lens. The magnification of the image of the substrate W may be calculated as the product of the magnification of the objective lens 32 and the magnification of the alternative lens 54.

The first illumination light source 60 may be placed on one side of the objective lens 32. When the second illumination light 83 is removed, the first illumination light source 60 may provide the first illumination light 63 on the substrate W. The first illumination light 63 may be reflected on the substrate W to generate the first reflected light 65. The first illumination light 63 may have the same wavelength as the wavelength of the first reflected light 65. According to one example, the first illumination light source 60 may include a first light source 62 and a first bandwidth filter unit 64.

The first light source 62 may generate first source light 61. For example, the first light source 62 may include a xenon plasma lamp or an ultraviolet laser.

The first bandwidth filter unit 64 may be disposed on the optical axis 102 of the first illumination light 63 between the first light source 62 and the objective lens 32. The optical axis 102 of the first illumination light 63 may be in the first direction (x). For example, the first bandwidth filter unit 64 may include an optical filter. The first bandwidth filter unit 64 may transmit a portion of the first source light 61 to obtain the first illumination light 63. The first illumination light 63 may have a first wavelength band. For example, the first wavelength band may range from about 260 nm to about 360 nm and have a bandwidth of about 100 nm. Here, the wavelength band can be defined as a wavelength range between the lower limit wavelength and the upper limit wavelength, and the bandwidth can be defined as the wavelength difference between the upper limit wavelength and the lower limit wavelength. The present invention may not be limited thereto. The first wavelength band is selected from a wavelength range of about 100 nm to about 2000 nm, and may have a bandwidth of about 30 nm to about 100 nm.

The first illumination optical system 70 may be disposed between the first bandwidth filter unit 64 and the objective lens 32. The first illumination optical system 70 may transmit the first illumination light 63 to the objective lens 32. Here, 'illumination' of the first illumination optical system 70 may be understood and/or interpreted as 'illuminating side'. According to one example, the first illumination optical system 70 includes a first rod lens 71, a first collimating lens 72, a first illumination aperture 73, and first illumination relay lenses 74. , may include a first lighting polarizer 75 and a first beam splitter 76. The first rod lens 71 may transmit the first illumination light 63 to the collimating lens 72. The first collimating lens 72 may provide the first illumination light 63 to the first illumination aperture 73.

The first illumination aperture 73 may define the beam size of the first illumination light 63. For example, the first lighting aperture 73 may include a second diaphragm 77 and a first lighting hole 78 within the second diaphragm 77. The second diaphragm 77 may be the same as the first diaphragm 55. The second diaphragm 77 may include a black circular film. The first lighting hole 78 may have a circular shape. The present invention may not be limited to this, and the first lighting hole 78 may have a polygonal shape such as a triangle, square, pentagon, hexagon, or octagon, or a ring shape. When the first illumination hole 78 and the first imaging hole 56 have the same shape and the same arrangement structure, the first illumination light 63 and the first reflected light 65 are the same beam. You can have any size. Accordingly, light transmission efficiency can be maximized. When the first imaging hole 56 is disposed on one side (ex, left) of the first diaphragm 55, the first lighting hole 78 is located on one side (ex, left) of the second diaphragm 77. It can be placed on the left). Conversely, when the first imaging hole 56 is disposed on the other side (ex, right) of the first diaphragm 55, the first lighting hole 78 is located on the other side (ex, right) of the second diaphragm 77. ex, can be placed on the right).

The first lighting relay lenses 74 may be disposed between the first lighting aperture 73 and the objective lens 32. The first illumination relay lenses 74 may enable adjustment of the distance between the first illumination light source 60 and the objective lens 32. The first lighting polarizer 75 may be disposed between the first lighting relay lenses 74.

The first illumination polarizer 75 may polarize the first illumination light 63. The first illumination polarizer 75 may be the same as the imaging polarizer 52. The polarization shape and polarization direction of the first illumination light 63 may be the same as the polarization shape and polarization direction of the first reflected light 65. If the first illumination light 63 is linearly polarized, the first reflected light 65 may be linearly polarized. Additionally, when the first illumination light 63 is elliptically polarized, the first reflected light 65 may be elliptically polarized.

The first beam splitter 76 may be disposed between the first lighting relay lenses 74 and the objective lens 32. Additionally, the first beam splitter 76 may be disposed between the objective lens 32 and the imaging relay lenses 51. The first beam splitter 76 may provide the first illumination light 63 to the objective lens 32. The first illumination light 63 may be incident on the substrate W through the objective lens 32. The first illumination light 63 may be reflected by the substrate W to generate the first reflected light 65. The first reflected light 65 may be provided to the image sensor 40 through the objective lens 32, the first beam splitter 76, and the imaging optical system 50.

Figure 3 shows the broadband image 110 detected by the first reflected light 65 of Figure 2.

Referring to FIG. 3 , the first reflected light 65 may cause the image sensor 40 and the control unit 100 to detect the wideband image 110 of the substrate W. The broadband image 110 may be an inspection image. According to one example, the broadband image 110 may have defect images 112. The defect images 112 may appear due to particle defects, short defects, or line cut defects on the substrate W. Accordingly, the control unit 100 may analyze the wideband image 110 and the defect images 112 to inspect defects on the substrate W.

Referring again to FIG. 2, when the first illumination light 63 is turned off, the second illumination light source 80 provides a second illumination light 83 on the substrate W. can be provided. The control unit 100 can measure surface characteristics of the inspected substrate W using the second illumination light 83 without moving the substrate W. According to one example, the second illumination light source 80 may include a second light source 82 and a second bandwidth filter unit 84. The second light source 82 may generate second source light 81. The second light source 82 may be the same as the first light source 62.

The second bandwidth filter unit 84 may be disposed on the optical axis 102 of the second illumination light 83 between the second light source 82 and the second illumination optical system 90. The optical axis 102 of the second illumination light 83 may be in the first direction (x). The second bandwidth filter unit 84 may include a monochromator. The second bandwidth filter unit 84 may extract the second illumination light 83 by splitting the second source light 81. For example, the second bandwidth filter unit 84 may include a prism 86 and a slit structure 88. The prism 86 may split the second source light 81. The slit structure 88 may have a slit 87. The slit 87 may selectively pass a portion of the split source light 81 to generate the second illumination light 83. The second illumination light 83 may have a plurality of second wavelength bands within the first wavelength band. The second illumination light 83 in each of the second wavelength bands may have a second bandwidth that is smaller than the first bandwidth. For example, when the first bandwidth is about 100 nm, the second bandwidth may be about 20 nm. The second wavelength bands of the second illumination light 83 may be in the wavelength categories of 240 nm to 260 nm, 260 nm to 280 nm, 280 nm to 300 nm, and 300 nm to 320 nm. Accordingly, the second bandwidth filter unit 84 can extract the second illumination light 83 into the second bandwidth that is narrower than the first bandwidth of the first illumination light 63.

The second illumination optical system 90 may be disposed between the slit structure 88 and the objective lens 32. The second illumination optical system 90 may transmit the second illumination light 83 to the objective lens 32. According to one example, the second illumination optical system 90 includes a second rod lens 91, a second collimating lens 92, a second illumination aperture 93, second illumination relay lenses 94, and a second illumination relay lens 94. It may include an illumination polarizer 95 and a second beam splitter 96. The second rod lens 91 may transmit the second illumination light 83 to the second collimating lens 92. The second collimating lens 92 may provide the second illumination light 83 to the second illumination aperture 93.

The second illumination aperture 93 may define the beam size of the second illumination light 83. For example, the second lighting aperture 93 may include a third diaphragm 97 and a second lighting hole 98 within the third diaphragm 97. The third diaphragm 97 may be the same as the first and second diaphragms 55 and 77. The third diaphragm 97 may include a black circular film. The second lighting hole 98 may have a circular shape. The present invention may not be limited to this, and the second lighting hole 98 may have various shapes. When the second illumination hole 98 and the second imaging hole 57 have the same shape and the same arrangement structure, the second illumination light 83 and the second reflected light 85 are the same beam. You can have any size. Additionally, light transmission efficiency can be as high as possible. When the second imaging hole 57 is disposed on the other side (ex, right) of the first diaphragm 55 during measurement of the spectral tilt optical system, the second illumination hole 98 is located on the third diaphragm ( 97) can be placed on the other side (ex, right). Conversely, when the second imaging hole 57 is disposed on one side (ex, left) of the first diaphragm 55, the second lighting hole 98 is located on one side (ex, left) of the third diaphragm 97. ex, left).

FIG. 4 shows an example of the imaging aperture 53 of FIG. 2 and the first and second lighting apertures 73 and 93.

Referring to FIG. 4, when measuring a spectral vertical optical system, the imaging aperture 53 and the first and second illumination apertures 73 and 93 may all have the same shape and arrangement structure. According to one example, the imaging aperture 53 and the first and second lighting apertures 73 and 93 are located at the center of the first to third diaphragms 55, 77 and 97. It may include central holes 59, 79, and 99, respectively. The first to third central holes 59, 79, and 99 may have the same shape and size.

FIG. 5 shows an example of the imaging aperture 53 of FIG. 2 and the first and second lighting apertures 73 and 93.

Referring to FIG. 5, when measuring a spectral vertical optical system, the imaging aperture 53 and the first and second illumination apertures 73 and 93 are connected to first to third diaphragms 55, 77, and 97. ) The edge may include first to third edge holes 59a, 79a, and 99a, respectively. The first to third edge holes 59a, 79a, and 99a may have the same shape and size. For example, the first to third edge holes 59a, 79a, and 99a may have a ring shape.

Referring again to FIG. 2, the second lighting relay lenses 94 may be disposed between the second lighting aperture 93 and the objective lens 32. The second illumination relay lenses 94 may enable adjustment of the distance between the second illumination light source 80 and the objective lens 32. The second lighting polarizer 95 may be disposed between the second lighting relay lenses 94.

The second lighting polarizer 95 may polarize the second lighting light 83. The second lighting polarizer 95 may be the same as the imaging polarizer 52. The polarization shape and polarization direction of the second illumination light 83 may be the same as the polarization shape and polarization direction of the second reflected light 85.

The second beam splitter 96 may be disposed between the second lighting relay lenses 94 and the objective lens 32. Additionally, the second beam splitter 96 may be disposed between the objective lens 32 and the imaging relay lenses 51. The second beam splitter 96 may be arranged in a direction crossing the first beam splitter 76. The objective lens 32 may provide the second illumination light 83 to the substrate W. Incident directions of the first illumination light 63 and the second illumination light 83 may be opposite to each other. The second illumination light 83 may be reflected on the substrate W to generate the second reflected light 85. The second reflected light 85 may be provided to the image sensor 40 through the objective lens 32 and the imaging optical system 50.

Figure 6 shows first through fourth narrowband images 122-128 detected by the second reflected light 85 of Figure 2.

Referring to FIG. 6, the second reflected light 85 may be detected as first to fourth narrowband images 122-128 through the image sensor 40 and the control unit 100. The first narrowband image 122 was detected by second reflected light 85 in a wavelength range of about 240 nm to about 260 nm. The second to fourth narrowband images 124, 126, 128 were detected by second reflected light 85 in wavelength bands of about 260 nm to about 280 nm, about 280 nm to about 300 nm, and about 300 nm to about 320 nm, respectively. . The first to fourth narrowband images 122-128 may have different intensities and/or brightnesses depending on their positions.

FIG. 7 shows first and second spectra 132 and 134 obtained from the first through fourth narrowband images 122 - 128 of FIG. 6 .

Referring to FIG. 7, the control unit 100 may acquire first and second spectra 132 and 134 by analyzing the first to fourth narrowband images 122-128. The first spectrum 132 may correspond to the intensity of the second reflected light 85 within the first pixel P ₁ of each of the first to fourth narrowband images 122 - 128 . Additionally, the second spectrum 134 may correspond to the intensity of the second reflected light 85 within the second pixel P ₂ of each of the first to fourth narrowband images 122-128. there is.

The control unit 100 may analyze the first and second spectra 132 and 134 to calculate and/or measure surface characteristics (e.g., thin film thickness, pattern width) of the substrate W. The calculation method of surface properties will be explained in detail in the inspection and measurement method. Accordingly, the control unit 100 can inspect defects at the corresponding location of the substrate W and measure and/or measure surface characteristics of the substrate W without moving the inspected substrate W.

The inspection and measurement method of the inspection and measurement device 20 of the present invention configured as described above will be described as follows.

FIG. 8 is a flow chart showing an example of an inspection and measurement method using the inspection and measurement device 20 of FIG. 2.

Referring to FIG. 8, the inspection and measurement method of the present invention includes a step of recognizing the position of the substrate W (S10), a step of determining whether to inspect a defect of the substrate W (S20), and a broadband image Obtaining 110 (S30), acquiring defect images 112 (S40), determining whether to measure surface characteristics of the substrate W (S50), acquiring narrowband images It may include a step (S60), a step of acquiring spectra (S70), and a step of acquiring surface characteristics of the substrate (W) (S80).

First, when the substrate W is provided on the stage 30, the control unit 100 recognizes the corresponding position of the substrate W (S10).

Next, the control unit 100 determines whether to inspect the substrate W for defects (S20).

When it is determined that a defect in the substrate W is to be inspected, the control unit 100 acquires a broadband image 110 using the first illumination light source 60 and the image sensor 40 (S30) ). When the first illumination light source 60 provides the first illumination light 63 on the substrate W, the image sensor 40 detects the first reflected light 65 from the substrate W. can be received to obtain a broadband image 110 in the control unit 100. The first reflected light 65 may have the first wavelength band and the first bandwidth. The broadband image 110 may have defect images 112 . If it is determined that the defect of the substrate W cannot be inspected, the control unit 100 may determine whether to measure the surface characteristics of the substrate W (S50).

FIG. 9 shows defect images 112 of FIG. 3 .

Referring to FIGS. 8 and 9, the control unit 100 obtains defect images 112 from the wideband image 110 (S40). For example, the control unit 100 may obtain the defect images 112 by comparing the wideband image 110 with a reference image (not shown), that is, by removing the background image of the wideband image 110. there is. The reference image may be a pre-stored reference inspection image. Alternatively, the reference image may be a reference inspection image detected at another location on the substrate W. When the inspection process at the corresponding position of the substrate W is completed, the first illumination light 63 may be turned off.

Afterwards, the control unit 100 determines whether to measure the surface characteristics of the substrate W (S50).

When it is determined that the surface characteristics of the substrate W are measured, the control unit 100 acquires narrow-band images using the second illumination light source 80 and the image sensor 40 (S60) . When the second illumination light source 80 provides second illumination light 83 on the substrate W, the image sensor 40 receives the second reflected light 85 from the substrate W. By receiving the narrowband images, the control unit 100 can obtain narrowband images. The narrowband images may be the first to fourth narrowband images 122-128. The first to fourth narrowband images 122-128 may be images detected by the second reflected light 85 in each of the second wavelength bands. If it is determined that the surface characteristics of the substrate W cannot be measured, the control unit 100 may end the inspection process and measurement process at the recognized location of the substrate W.

Next, the control unit 100 acquires spectra by analyzing the brightness intensity within each pixel of the narrowband images (S70). The spectra may be acquired at each location of the substrate W. When the spectra are the first and second spectra 132 and 134 of FIG. 7, the first and second spectra 132 and 134 are the pixels corresponding to the first and second pixels P1 and P2. These may be measurement values at substrate (W) positions.

Then, the control unit 100 analyzes the spectra to obtain surface characteristics of the substrate W (S80). For example, the control unit 100 may obtain surface characteristics of the substrate W by comparing the spectra with reference spectra. For example, the reference spectra may have information about surface properties of the substrate W. The control unit 100 may obtain surface characteristics of the substrate W for each pixel by reading information on the reference spectra that match the spectra. When the inspection process at the corresponding position of the substrate W is completed, the second illumination light 83 may be turned off.

Although not shown, the stage 30 can move the substrate W from the first position to the second position. The control unit 100 may perform the inspection process and measurement process of steps 10 (S10) to 80 (S80) with respect to the second position of the substrate (W).

FIG. 10 is a flow chart showing an example of an inspection and measurement method using the inspection and measurement device 20 of FIG. 2.

Referring to FIG. 10, the inspection and measurement method includes preparing a substrate W (S100), determining whether to perform defect inspection first (S200), and performing the defect inspection prior to surface property measurement ( S300), and a step of measuring the surface characteristics prior to inspecting the defect (S400).

First, the substrate manufacturing apparatus and/or substrate manufacturing facility prepares the substrate W (S100). The robot arm can provide the substrate (W) on the stage (30).

Next, the control unit 100 determines whether to proceed with defect inspection of the substrate W first (S200).

If the defect inspection must be performed first, the control unit 100 performs the defect inspection before surface characteristic measurement (S300).

FIG. 11 shows an example of a step (S300) in which the defect inspection of FIG. 10 is performed prior to surface property measurement.

Referring to FIG. 11 , the step of performing defect inspection prior to measuring surface properties (S300) may be configured in the same manner as in FIG. 8 . According to one example, the step of performing defect inspection prior to surface characteristic measurement (S300) includes recognizing the position of the substrate (W) (S10) and determining whether to inspect the substrate (W) for defects. (S20), acquiring a broadband image 110 (S30), acquiring defect images 112 (S40), determining whether to measure surface characteristics of the substrate W (S50) , acquiring narrowband images (S60), acquiring spectra (S70), and acquiring surface characteristics of the substrate (W) (S80).

Referring again to FIG. 10, if the defect inspection is not performed first, the control unit 100 performs the surface characteristic measurement prior to the defect inspection (S400).

FIG. 12 shows an example of a step (S400) in which the surface characteristic measurement of FIG. 10 is performed prior to the defect inspection.

Referring to FIG. 12, the step of measuring surface characteristics prior to the defect inspection (S400) includes determining whether to measure the surface characteristics of the substrate W (S50) and acquiring narrow-band images ( S60), acquiring spectra (S70), acquiring surface characteristics of the substrate W (S80), recognizing the position of the substrate W (S10), defects in the substrate W It may include a step of determining whether to inspect (S20), a step of acquiring a wideband image 110 (S30), and a step of acquiring defect images 112 (S40).

13 and 14 show an example of the inspection and measurement device 20 of FIG. 1.

13 and 14, the inspection and measurement device 20 of the present invention uses any one of the first and second illumination light sources 60 and 80 according to defect inspection or surface characteristic measurement of the substrate W. It may include a bandwidth selection unit 130 that selectively provides the first and second illumination lights 63 and 83 to the optical axis 102. The bandwidth selection unit 130 may be connected to the control unit 100. The bandwidth selection unit 130 may align any one of the first and second illumination light sources 60 and 80 with the optical axis 102 of the first and second illumination light sources 63 and 83. . According to one example, the bandwidth selection unit 130 may be connected to the first and second illumination light sources 60 and 80. When the optical axis 102 is in the first direction (x), the bandwidth selection unit 130 selects the first and second illumination light sources 60 and 80 in the second direction (y) or the third direction ( z) can be moved. For example, the bandwidth selection unit 130 may include a plate driver.

The stage 30, image sensor 40, imaging optical system 50, and control unit 100 may be configured in the same manner as in FIG. 2 . The illumination optical system 170 may be the same as any one of the first and second illumination optical systems 70 and 90 of FIG. 2 . The rod lens 171, collimating lens 172, illumination diaphragm 173, illumination relay lenses 174, illumination polarizer 175, and beam splitter 176 of the illumination optical system 170 are the first of FIG. 2. The illumination optical system 70 includes a first rod lens 71, a first collimating lens 72, a first illumination aperture 73, first illumination relay lenses 74, a first illumination polarizer 75, and a first illumination polarizer 75. Each may correspond to the beam splitter 76. The imaging hole 56a of the imaging aperture 53 may have the same shape and direction as the first lighting hole 78 of the first lighting aperture 73. Likewise, the rod lens 171, collimating lens 172, illumination diaphragm 173, illumination relay lenses 174, illumination polarizer 175, and beam splitter 176 of the illumination optical system 170 are as shown in FIG. 2. The second illumination optical system 90 includes a second rod lens 91, a second collimating lens 92, a second illumination aperture 93, second illumination relay lenses 94, a second illumination polarizer 95, and Each may correspond to the second beam splitter 96. The imaging hole 56a may have the same shape and direction as the second lighting hole 98 of the second lighting aperture 93.

Referring to FIG. 13, when inspecting a defect in the substrate W, the bandwidth selection unit 130 selects the first illumination light source 60 along the optical axis 102 of the first illumination light 63. can be provided to. The first illumination light source 60 may provide the first illumination light 63 on the substrate W to detect the broadband image 110 to the image sensor 40 and the control unit 100. . The control unit 100 may inspect the substrate W for defects by analyzing the wideband image 110.

Referring to FIG. 14, when measuring the surface characteristics of the substrate W, the bandwidth selection unit 130 selects the second illumination light source 80 along the optical axis 102 of the second illumination light 83. ) can be provided. The second illumination light source 80 may provide second illumination light 83 on the substrate W to enable the image sensor 40 and the control unit 100 to detect narrow-band images. The control unit 100 may measure and/or measure surface characteristics of the substrate W by analyzing the narrow-band images.

15 and 16 show an example of the inspection and measurement device 20 of FIG. 1.

15 and 16, the bandwidth selection unit 130 of the inspection and measurement device 20 of the present invention selects first and second bandwidth filter units 164 according to defect inspection or surface characteristic measurement of the substrate W. 184) can be selectively provided to the optical axis 102 of the first and second illumination lights 163 and 183. According to one example, the bandwidth selection unit 130 may be connected to the first and second bandwidth filter units 164 and 184. When the optical axis 102 is in the first direction (x), the bandwidth selection unit 130 selects the first and second bandwidth filter units 164 and 184 in the second direction (y) or the third direction ( z) can be moved.

The stage 30, the image sensor 40, the imaging optical system 50, the illumination optical system 170, and the control unit 100 may be configured the same as those in FIGS. 13 and 14.

Referring to FIG. 15, when inspecting a defect in the substrate W, the bandwidth selection unit 130 selects the first bandwidth filter unit 164 between the illumination optical system 170 and the light source 162. It can be provided to the optical axis 102. The light source 162 may generate illumination light 161. The first bandwidth filter unit 164 may transmit a portion of the illumination light 161 to obtain the first illumination light 163. The first bandwidth filter unit 164 may provide the first illumination light 163 to the substrate W to detect the broadband image 110 to the image sensor 40 and the control unit 100. . The control unit 100 may inspect the substrate W for defects by analyzing the wideband image 110.

Referring to FIG. 16 , when measuring the surface characteristics of the substrate W, the bandwidth selection unit 130 may provide the second bandwidth filter unit 184 to the optical axis 102. The second bandwidth filter unit 184 may obtain second illumination light 183 by splitting the illumination light 161. According to one example, the second bandwidth filter unit 184 may include a prism 186 and a slit structure 188. The second bandwidth filter unit 184 may provide the second illumination light 183 to the substrate W to enable the image sensor 40 and the control unit 100 to detect narrow-band images. The control unit 100 may measure and/or measure surface characteristics of the substrate W by analyzing the narrow-band images.

FIG. 17 is a flow chart showing an example of an inspection and measurement method using the inspection and measurement device 20 of FIGS. 15 and 16.

Referring to FIG. 17, the inspection and measurement method of the present invention includes a step of recognizing the position of the substrate W (S10), a step of determining whether to inspect a defect of the substrate W (S20), and the first Providing a bandwidth filter unit 164 (S22), acquiring the broadband image 110 (S30), acquiring the defect images 112 (S40), the surface of the substrate W Determining whether to measure characteristics (S50), providing the second bandwidth filter unit 184 (S52), acquiring narrowband images (S60), acquiring spectra (S70), and obtaining surface characteristics of the substrate W (S80).

First, when the substrate W is provided on the stage 30, the control unit 100 recognizes the corresponding position of the substrate W (S10).

Next, the control unit 100 determines whether to inspect the substrate W for defects (S20).

When the control unit 100 determines that the substrate W is inspected for a defect, the bandwidth selection unit 130 provides the first bandwidth filter unit 164 on the optical axis 102 ( S22). If defects in the substrate W are not inspected, the control unit 100 may determine whether to measure surface characteristics of the substrate W (S50).

Next, the control unit 100 acquires a broadband image 110 using the first bandwidth filter unit 164 and the image sensor 40 (S30). The first bandwidth filter unit 164 may provide the first illumination light 163 to the substrate (W). The image sensor 40 may receive the first reflected light 65 from the substrate W and cause the control unit 100 to obtain a broadband image 110.

Next, the control unit 100 obtains defect images 112 from the wideband image 110 (S40).

Then, the control unit 100 determines whether to measure the surface characteristics of the substrate W (S50).

If the control unit 100 determines that the surface characteristics of the substrate W are measured, the bandwidth selection unit 130 provides a second bandwidth filter unit 184 to the optical axis 102 (S52) . If the control unit 100 determines that the surface characteristics of the substrate W are not measured, the inspection process and measurement process at the recognized location of the substrate W may be terminated.

Next, the control unit 100 acquires narrow-band images using the second bandwidth filter unit 184 and the image sensor 40 (S60). When the second bandwidth filter unit 184 provides the second illumination light 183 on the substrate W, the image sensor 40 receives the second reflected light 85 from the substrate W. Narrowband images can be received and acquired in the control unit 100.

Next, the control unit 100 acquires spectra by analyzing the brightness intensity within each pixel of the narrowband images (S70). The spectra may be acquired at each location of the substrate W.

Finally, the control unit 100 analyzes the spectra to obtain surface characteristics of the substrate W (S80). For example, the control unit 100 may obtain surface characteristics of the substrate W by comparing the spectra with reference spectra.

As above, embodiments are disclosed in the drawings and specifications. Although specific terms are used here, they are used only for the purpose of describing the present invention and are not used to limit the meaning or scope of the present invention described in the patent claims. Therefore, those skilled in the art will understand that various modifications and other equivalent embodiments are possible. Therefore, the true scope of technical protection of the present invention should be determined by the technical spirit of the attached patent claims.

Claims (10)

A stage on which a substrate is provided;
A sensor disposed on the stage;
an objective lens disposed between the sensor and the stage to project the substrate;
a light source providing illumination light on the substrate through the objective lens;
a first bandwidth filter unit disposed between the light source and the objective lens and detecting a wideband image of the substrate by the sensor by controlling a wavelength of the illumination light to a first bandwidth; and
A second bandwidth filter unit disposed between the light source and the objective lens and controlling the wavelength of the illumination light to a second bandwidth smaller than the first bandwidth to detect a narrow-band image of the substrate in the sensor,
The first bandwidth filter unit includes an optical filter that transmits the illumination light and filters it into first illumination light,
The second bandwidth filter unit includes a monochromator that splits the illumination light to extract second illumination light,
The monochromator:
a prism that splits the illumination light; and
An inspection and measurement device comprising a slit structure having a slit that transmits a portion of the spectrum of the split illumination light.
According to claim 1,
Connected to the first and second bandwidth filter units, and adjusting any one of the first and second bandwidth filter units to the optical axis of the illumination light between the light source and the objective lens according to defect inspection or surface property measurement of the substrate. An inspection and measurement device further comprising a bandwidth selection unit that selectively provides a bandwidth.
According to claim 2,
The bandwidth selection unit is an inspection and measurement device including a flat plate driver.
delete delete According to claim 1,
It further includes an imaging optical system disposed between the sensor and the objective lens to transmit reflected light of the illumination light to the sensor,
The imaging optical system is:
imaging aperture; and
An inspection and measurement device comprising an alternative lens disposed between the imaging aperture and the sensor to image the reflected light onto the sensor.
According to claim 6,
The imaging aperture is:
first diaphragm; and
An inspection and measurement device comprising first and second imaging holes disposed within the first diaphragm and allowing the reflected light to pass through. According to claim 7,
The light source is:
a first light source adjacent to the first bandwidth filter unit; and
An inspection and measurement device comprising a second light source adjacent to the second bandwidth filter unit.
According to claim 8,
It further includes a first illumination optical system disposed between the first light source and the objective lens to transmit the illumination light to the substrate,
The first illumination optical system is an inspection and measurement device including a first illumination stop having a first illumination hole identical to the first imaging hole.
According to clause 9,
It further includes a second illumination optical system disposed between the second light source and the objective lens to transmit the illumination light to the substrate,
The second illumination optical system includes a second illumination stop having a second illumination hole identical to the second imaging hole.

Images