KR102680008B1 - 체적 음향 공진기 - Google Patents
체적 음향 공진기 Download PDFInfo
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- KR102680008B1 KR102680008B1 KR1020160103168A KR20160103168A KR102680008B1 KR 102680008 B1 KR102680008 B1 KR 102680008B1 KR 1020160103168 A KR1020160103168 A KR 1020160103168A KR 20160103168 A KR20160103168 A KR 20160103168A KR 102680008 B1 KR102680008 B1 KR 102680008B1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/177—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator of the energy-trap type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/176—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of ceramic material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/547—Notch filters, e.g. notch BAW or thin film resonator filters
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/877—Conductive materials
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- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
도 3은 본 발명의 일 실시예에 따른 프레임 전극층을 나타낸 사시도이다.
도 4는 본 발명의 다른 실시예에 따른 프레임 전극층을 나타낸 사시도이다.
도 5는 본 발명의 일 실시예에 따른 유효 전기기계 결합 계수(effective electromechanical coupling coefficient)의 제곱 값(Kt2)을 측정한 결과를 나타내는 그래프이다.
도 6는 본 발명의 일 실시예에 따른 스퓨리어스 노이즈의 피크치(Spurious Noise_Peak)를 측정한 결과를 나타내는 그래프이다.
도 7은 본 발명의 일 실시예에 따른 삽입 손실(Insertion Loss)를 측정한 결과를 나타내는 그래프이다.
도 8은 본 발명의 일 실시예에 따른 감쇄(Attenuation) 특성을 측정한 결과를 나타내는 그래프이다.
도 9은 본 발명의 일 실시예에 따른 품질 계수를 측정한 결과를 나타내는 그래프이다.
도 10은 본 발명의 일 실시예에 따른 분할부 또는 오목부의 총 길이에 대한 프레임 전극 또는 볼록부의 총 길이의 비율에 따른 유효 전기기계 결합 계수의 제곱 값(Kt2) 및 병렬 품질 계수(Qp)를 측정한 결과를 나타내는 그래프이다.
도 11 및 도 12는 본 발명의 일 실시예들에 따른 필터의 개략적인 회로도이다.
길이 A[㎛] | 개수 B | 길이 C[㎛] | 길이 D[㎛] | 비율 E[%] | |
Ref | 0 | 0 | 0 | 314 | 0 |
Case 1 | 10 | 20 | 200 | 114 | 175.44 |
Case 2 | 10 | 10 | 100 | 214 | 46.73 |
Case 3 | 10 | 5 | 50 | 264 | 18.94 |
Case 4 | 12 | 16 | 192 | 122 | 157.38 |
Case 5 | 12 | 8 | 96 | 218 | 44.04 |
Case 6 | 12 | 4 | 48 | 266 | 18.05 |
Case 7 | 8 | 24 | 192 | 122 | 157.39 |
Case 8 | 8 | 12 | 96 | 218 | 44.04 |
Case 9 | 8 | 6 | 48 | 266 | 18.05 |
Kt2[%] | SN_Peak[dB] | Qp | Qs | |
Ref | 5.8274 | 0.1776 | 835.15 | 94.292 |
Case 1 | 5.9104 | 0.1635 | 671.77 | 95.999 |
Case 2 | 5.8816 | 0.1669 | 750.81 | 91.771 |
Case 3 | 5.8527 | 0.1572 | 752.66 | 90.469 |
Case 4 | 5.883 | 0.1554 | 697.95 | 84.715 |
Case 5 | 5.8534 | 0.1653 | 788.81 | 97.37 |
Case 6 | 5.8245 | 0.1793 | 817.52 | 87.007 |
Case 7 | 5.8845 | 0.1501 | 661.17 | 89.575 |
Case 8 | 5.8556 | 0.1398 | 734.57 | 93.544 |
Case 9 | 5.8267 | 0.1446 | 751.09 | 97.182 |
112: 에어 캐비티
120: 절연층
130: 멤브레인
135: 공진부
140: 제1 전극층
150: 압전층
160: 제2 전극층
190: 프레임 전극층
Claims (18)
- 기판;
상기 기판 상부에 순차적으로 적층되는 제1 전극층, 압전층 및 제2 전극층을 포함하고, 활성 영역 및 비활성 영역으로 구획되는 공진부; 및
상기 활성 영역 내에서 상기 활성 영역의 외주부를 따라 이격 배치되는 복수의 프레임 전극을 포함하는 프레임 전극층; 을 포함하고,
상기 프레임 전극층은, 상기 복수의 프레임 전극 중 인접하는 프레임 전극 사이에서 형성되는 복수의 분할부를 더 포함하고,
상기 복수의 분할부의 길이에 대한 상기 복수의 프레임 전극의 길이의 비는 20~200%인 체적 음향 공진기.
- 삭제
- 제1항에 있어서,
상기 복수의 분할부의 총 길이가 길수록 전기기계 결합 계수의 제곱 값이 상승하는 체적 음향 공진기.
- 삭제
- 제1항에 있어서,
상기 활성 영역은 상기 제1 전극층, 상기 압전층 및 상기 제2 전극층이 수직 방향으로 중첩된 영역에 해당하는 체적 음향 공진기.
- 제1항에 있어서, 상기 제1 전극층 및 상기 제2 전극층 각각은,
금(Au), 티탄(Ti), 탄탈(Ta), 몰리브덴(Mo), 루테늄(Ru), 백금(Pt), 텅스텐(W), 알루미늄(Al), 니켈(Ni), 및 이리듐(Ir) 중 하나 또는 이들의 합금으로 형성되는 체적 음향 공진기.
- 제1항에 있어서, 상기 압전층은,
질화 알루미늄(AlN), 산화아연(ZnO), 및 납 지르코늄 티타늄 산화물(PZT; PbZrTiO) 중 하나로 형성되는 체적 음향 공진기.
- 제1항에 있어서,
상기 압전층은 희토류 금속을 포함하고, 상기 희토류 금속은 스칸듐(Sc), 에르븀(Er), 이트륨(Y), 및 란탄(La) 중 적어도 하나를 포함하는 체적 음향 공진기.
- 제8항에 있어서,
상기 압전층은 상기 희토류 금속을 1~20at% 만큼 포함하는 체적 음향 공진기.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
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KR1020160103168A KR102680008B1 (ko) | 2016-08-12 | 2016-08-12 | 체적 음향 공진기 |
US15/486,806 US10541669B2 (en) | 2016-08-12 | 2017-04-13 | Bulk acoustic resonator |
CN201710392277.7A CN107733396B (zh) | 2016-08-12 | 2017-05-27 | 体声波谐振器 |
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KR20200030478A (ko) | 2018-09-12 | 2020-03-20 | 스카이워크스 글로벌 피티이. 엘티디. | 벌크 음향파 공진기를 위한 리세스 프레임 구조체 |
CN111193484A (zh) * | 2018-11-14 | 2020-05-22 | 天津大学 | 带粗糙面体声波谐振器、滤波器和电子设备 |
CN111342800A (zh) * | 2018-12-19 | 2020-06-26 | 天津大学 | 带离散结构的体声波谐振器、滤波器和电子设备 |
WO2020133003A1 (zh) * | 2018-12-26 | 2020-07-02 | 天津大学 | 包括环形凸起梁檐结构的声学谐振器、滤波器和电子设备 |
WO2020133000A1 (zh) * | 2018-12-26 | 2020-07-02 | 天津大学 | 体声波谐振器 |
KR102272592B1 (ko) * | 2019-01-31 | 2021-07-05 | 삼성전기주식회사 | 체적 음향 공진기 |
KR102276515B1 (ko) * | 2019-02-15 | 2021-07-14 | 삼성전기주식회사 | 체적 음향 공진기 |
CN111786652B (zh) * | 2019-04-04 | 2022-05-10 | 中芯集成电路(宁波)有限公司上海分公司 | 体声波谐振器及其制造方法和滤波器、射频通信系统 |
CN111786654B (zh) * | 2019-04-04 | 2023-01-06 | 中芯集成电路(宁波)有限公司上海分公司 | 体声波谐振器及其制造方法和滤波器、射频通信系统 |
CN110868172B (zh) * | 2019-04-23 | 2023-09-26 | 中国电子科技集团公司第十三研究所 | 薄膜体声谐振器和半导体器件 |
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