KR102677377B1 - 연마 패드 및 그의 제조 방법 - Google Patents
연마 패드 및 그의 제조 방법 Download PDFInfo
- Publication number
- KR102677377B1 KR102677377B1 KR1020207031363A KR20207031363A KR102677377B1 KR 102677377 B1 KR102677377 B1 KR 102677377B1 KR 1020207031363 A KR1020207031363 A KR 1020207031363A KR 20207031363 A KR20207031363 A KR 20207031363A KR 102677377 B1 KR102677377 B1 KR 102677377B1
- Authority
- KR
- South Korea
- Prior art keywords
- polishing pad
- dry
- polishing
- polyurethane sheet
- wet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/08—Processes
- C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/30—Low-molecular-weight compounds
- C08G18/38—Low-molecular-weight compounds having heteroatoms other than oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/40—High-molecular-weight compounds
- C08G18/48—Polyethers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
- C08G18/72—Polyisocyanates or polyisothiocyanates
- C08G18/74—Polyisocyanates or polyisothiocyanates cyclic
- C08G18/76—Polyisocyanates or polyisothiocyanates cyclic aromatic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polyurethanes Or Polyureas (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
Description
도 2는, 실시예 2의 연마 패드(폴리우레탄 시트)의 건조 상태 및 습윤 상태에 있어서의 20 내지 100℃에서의 저장 탄성률 E', 손실 탄성률 E" 및 tanδ를 나타내는 도면이다. 도 2 중, ◆는, 건조 상태의 연마 패드에 있어서의 E', E" 및 tanδ의 값을 의미하고, ×는, 습윤 상태의 연마 패드에 있어서의 E', E" 및 tanδ의 값을 의미한다.
도 3은, 실시예 3의 연마 패드(폴리우레탄 시트)의 건조 상태 및 습윤 상태에 있어서의 20 내지 100℃에서의 저장 탄성률 E', 손실 탄성률 E" 및 tanδ를 나타내는 도면이다. 도 3 중, ◆는, 건조 상태의 연마 패드에 있어서의 E', E" 및 tanδ의 값을 의미하고, ×는, 습윤 상태의 연마 패드에 있어서의 E', E" 및 tanδ의 값을 의미한다.
도 4는, 비교예 1의 연마 패드(폴리우레탄 시트)의 건조 상태 및 습윤 상태에 있어서의 20 내지 100℃에서의 저장 탄성률 E', 손실 탄성률 E" 및 tanδ를 나타내는 도면이다. 도 4 중, ◆는, 건조 상태의 연마 패드에 있어서의 E', E" 및 tanδ의 값을 의미하고, ×는, 습윤 상태의 연마 패드에 있어서의 E', E" 및 tanδ의 값을 의미한다.
도 5는, 실시예 1 내지 3 및 비교예 1의 연마 패드를 이용하여 3.5psi, 2.9psi 및 1.5psi의 연마 압력으로 Cu막 기판을 연마하였을 때의 연마 레이트(Å/분)를 나타내는 도면이다.
Claims (11)
- 폴리우레탄 시트를 갖는 연마층을 구비하는 연마 패드이며,
3일간 수욕 중에 침지해 둔 습윤 상태의 상기 폴리우레탄 시트의, 초기 하중 148g, 변형 범위 0.1%, 측정 주파수 1.6㎐, 인장 모드에서의, 20℃ 내지 100℃의 온도 범위에 있어서의 손실 정접 tanδ의 피크값(tanδ 피크wet)과, 수욕 중에 침지되어 있지 않은 건조 상태의 상기 폴리우레탄 시트의, 초기 하중 148g, 변형 범위 0.1%, 측정 주파수 1.6㎐, 인장 모드에서의, 20℃ 내지 100℃의 온도 범위에 있어서의 손실 정접 tanδ의 피크값(tanδ 피크dry) 사이의, 하기 식에서 구해지는 tanδ 피크값 변화율이 1.0% 이하이고,
상기 건조 상태의 폴리우레탄 시트의, 40℃, 초기 하중 148g, 변형 범위 0.1%, 측정 주파수 1.6㎐, 인장 모드에 있어서의 저장 탄성률(E'dry)이 200 내지 400㎫인, 상기 연마 패드.
tanδ 피크값 변화율=|tanδ 피크wet-tanδ 피크dry|/tanδ 피크dry×100 - 제1항에 있어서,
상기 습윤 상태의 폴리우레탄 시트의, 40℃, 초기 하중 148g, 변형 범위 0.1%, 측정 주파수 1.6㎐, 인장 모드에 있어서의 저장 탄성률(E'wet)과, 상기 건조 상태의 폴리우레탄 시트의, 40℃, 초기 하중 148g, 변형 범위 0.1%, 측정 주파수 1.6㎐, 인장 모드에 있어서의 저장 탄성률(E'dry) 사이의, 하기 식에서 구해지는 저장 탄성률의 변화율이 32% 이하인, 연마 패드.
저장 탄성률의 변화율=|E'wet-E'dry|/E'dry×100 - 제1항 또는 제2항에 있어서,
상기 습윤 상태의 폴리우레탄 시트의, 초기 하중 148g, 변형 범위 0.1%, 측정 주파수 1.6㎐, 인장 모드에서의, 20℃ 내지 100℃의 온도 범위에 있어서의 tanδ 피크 온도가 60 내지 100℃이고, 또한 상기 건조 상태의 폴리우레탄 시트의, 초기 하중 148g, 변형 범위 0.1%, 측정 주파수 1.6㎐, 인장 모드에서의, 20℃ 내지 100℃의 온도 범위에 있어서의 tanδ 피크 온도가 60 내지 100℃인, 연마 패드. - 제1항 또는 제2항에 있어서,
상기 습윤 상태의 폴리우레탄 시트의 tanδ 피크값이 0.10 내지 0.20이고, 또한 상기 건조 상태의 폴리우레탄 시트의 tanδ 피크값이 0.10 내지 0.20인, 연마 패드. - 제1항 또는 제2항에 있어서,
상기 폴리우레탄 시트가, 평균 입경 10 내지 150㎛의 중공체를 포함하는, 연마 패드. - 프리폴리머로서의 폴리우레탄 결합 함유 이소시아네이트 화합물 (A)와, 경화제 (D)를 혼합하여 성형체용 혼합액을 얻는 공정, 및
상기 성형체용 혼합액으로부터 폴리우레탄 수지 성형체를 성형하여 폴리우레탄 시트를 얻는 공정
을 포함하는, 제1항 또는 제2항에 기재된 연마 패드의 제조 방법. - 제6항에 있어서,
상기 프리폴리머가 구성 성분으로서 2,6-톨릴렌디이소시아네이트(2,6-TDI) 및/또는 2,4-톨릴렌디이소시아네이트(2,4-TDI)를 포함하고, 또한 디페닐메탄-4,4'-디이소시아네이트(MDI)를 포함하지 않는, 연마 패드의 제조 방법. - 제6항에 있어서,
상기 프리폴리머의 NCO 당량이 440 내지 480인, 연마 패드의 제조 방법. - 제6항에 있어서,
상기 경화제가 3,3'-디클로로-4,4'-디아미노디페닐메탄 및 폴리프로필렌글리콜을 포함하는, 연마 패드의 제조 방법. - 제1항 또는 제2항에 있어서,
상기 폴리우레탄 시트의 구성 성분으로서, 3,3'-디클로로-4,4'-디아미노디페닐메탄 및 폴리프로필렌글리콜을 포함하는, 연마 패드. - 삭제
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018066808A JP7141230B2 (ja) | 2018-03-30 | 2018-03-30 | 研磨パッド及びその製造方法 |
JPJP-P-2018-066808 | 2018-03-30 | ||
PCT/JP2019/011405 WO2019188577A1 (ja) | 2018-03-30 | 2019-03-19 | 研磨パッド及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20200128180A KR20200128180A (ko) | 2020-11-11 |
KR102677377B1 true KR102677377B1 (ko) | 2024-06-24 |
Family
ID=68061692
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020207031363A Active KR102677377B1 (ko) | 2018-03-30 | 2019-03-19 | 연마 패드 및 그의 제조 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11883925B2 (ko) |
JP (1) | JP7141230B2 (ko) |
KR (1) | KR102677377B1 (ko) |
CN (1) | CN111936268B (ko) |
TW (1) | TWI806994B (ko) |
WO (1) | WO2019188577A1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7198662B2 (ja) * | 2018-12-27 | 2023-01-04 | ニッタ・デュポン株式会社 | 研磨パッド |
JP7527121B2 (ja) | 2019-03-26 | 2024-08-02 | 富士紡ホールディングス株式会社 | 研磨パッド及び研磨加工物の製造方法 |
KR102293781B1 (ko) * | 2019-11-11 | 2021-08-25 | 에스케이씨솔믹스 주식회사 | 연마패드, 이의 제조방법 및 이를 이용한 반도체 소자의 제조방법 |
CN111909353A (zh) * | 2020-06-30 | 2020-11-10 | 山东一诺威聚氨酯股份有限公司 | 低粘度聚氨酯制备抛光垫的方法 |
WO2022201254A1 (ja) * | 2021-03-22 | 2022-09-29 | 富士紡ホールディングス株式会社 | 研磨パッド及び研磨加工物の製造方法 |
CN114986265B (zh) * | 2022-05-31 | 2022-11-18 | 嘉兴美旺机械制造有限公司 | 一种智能控制刀片打磨工艺方法及系统 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001091971A1 (en) | 2000-05-27 | 2001-12-06 | Rodel Holdings, Inc. | Polishing pads for chemical mechanical planarization |
JP2004165408A (ja) * | 2002-11-13 | 2004-06-10 | Toray Ind Inc | 研磨パッド |
JP2010082708A (ja) | 2008-09-29 | 2010-04-15 | Fujibo Holdings Inc | 研磨パッド |
JP2016196057A (ja) * | 2015-04-03 | 2016-11-24 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
US20170014970A1 (en) | 2014-03-31 | 2017-01-19 | Fujibo Holdings, Inc. | Polishing pad and process for producing same |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6749485B1 (en) | 2000-05-27 | 2004-06-15 | Rodel Holdings, Inc. | Hydrolytically stable grooved polishing pads for chemical mechanical planarization |
US6454634B1 (en) | 2000-05-27 | 2002-09-24 | Rodel Holdings Inc. | Polishing pads for chemical mechanical planarization |
US6860802B1 (en) | 2000-05-27 | 2005-03-01 | Rohm And Haas Electric Materials Cmp Holdings, Inc. | Polishing pads for chemical mechanical planarization |
US6736709B1 (en) | 2000-05-27 | 2004-05-18 | Rodel Holdings, Inc. | Grooved polishing pads for chemical mechanical planarization |
SG111222A1 (en) | 2003-10-09 | 2005-05-30 | Rohm & Haas Elect Mat | Polishing pad |
US7074115B2 (en) | 2003-10-09 | 2006-07-11 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad |
JP4593643B2 (ja) * | 2008-03-12 | 2010-12-08 | 東洋ゴム工業株式会社 | 研磨パッド |
JP5687118B2 (ja) | 2011-04-15 | 2015-03-18 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
JP5945874B2 (ja) * | 2011-10-18 | 2016-07-05 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
US9873180B2 (en) * | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
KR102398128B1 (ko) * | 2014-11-28 | 2022-05-13 | 주식회사 쿠라레 | 연마층용 성형체 및 연마 패드 |
-
2018
- 2018-03-30 JP JP2018066808A patent/JP7141230B2/ja active Active
-
2019
- 2019-03-19 KR KR1020207031363A patent/KR102677377B1/ko active Active
- 2019-03-19 CN CN201980023988.4A patent/CN111936268B/zh active Active
- 2019-03-19 WO PCT/JP2019/011405 patent/WO2019188577A1/ja active Application Filing
- 2019-03-19 US US17/040,638 patent/US11883925B2/en active Active
- 2019-03-21 TW TW108109708A patent/TWI806994B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001091971A1 (en) | 2000-05-27 | 2001-12-06 | Rodel Holdings, Inc. | Polishing pads for chemical mechanical planarization |
JP2004165408A (ja) * | 2002-11-13 | 2004-06-10 | Toray Ind Inc | 研磨パッド |
JP2010082708A (ja) | 2008-09-29 | 2010-04-15 | Fujibo Holdings Inc | 研磨パッド |
US20170014970A1 (en) | 2014-03-31 | 2017-01-19 | Fujibo Holdings, Inc. | Polishing pad and process for producing same |
JP2016196057A (ja) * | 2015-04-03 | 2016-11-24 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2019177430A (ja) | 2019-10-17 |
CN111936268B (zh) | 2022-11-08 |
TW201942172A (zh) | 2019-11-01 |
WO2019188577A1 (ja) | 2019-10-03 |
KR20200128180A (ko) | 2020-11-11 |
CN111936268A (zh) | 2020-11-13 |
JP7141230B2 (ja) | 2022-09-22 |
US20210114166A1 (en) | 2021-04-22 |
TWI806994B (zh) | 2023-07-01 |
US11883925B2 (en) | 2024-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102677377B1 (ko) | 연마 패드 및 그의 제조 방법 | |
TWI683855B (zh) | 研磨墊之製造方法 | |
TWI621506B (zh) | 硏磨墊及其製造方法 | |
TWI767882B (zh) | 研磨墊及其製造方法 | |
JP7438658B2 (ja) | 研磨パッド及び研磨加工物の製造方法 | |
WO2020067401A1 (ja) | 研磨パッド及び研磨加工物の製造方法 | |
KR102587715B1 (ko) | 연마 패드 및 그 제조 방법 | |
JP2023157918A (ja) | 研磨パッド及び研磨加工物の製造方法 | |
JP7640673B2 (ja) | 研磨パッド及び研磨加工物の製造方法 | |
TWI833924B (zh) | 研磨墊、研磨光學材料或半導體材料之表面之方法、及減少研磨光學材料或半導體材料之表面時之刮痕之方法 | |
JP7384608B2 (ja) | 研磨パッド及び研磨加工物の製造方法 | |
TW201942175A (zh) | 研磨墊、研磨墊之製造方法及光學材料或半導體材料之表面研磨方法 | |
JP7527121B2 (ja) | 研磨パッド及び研磨加工物の製造方法 | |
TW201636406A (zh) | 研磨墊 | |
JP2024028398A (ja) | 研磨パッド及び研磨加工物の製造方法 | |
JP6761566B2 (ja) | 研磨パッド | |
JP2023049880A (ja) | 研磨パッド | |
JP2019177454A (ja) | 研磨パッド、研磨パッドの製造方法、及び光学材料又は半導体材料の表面を研磨する方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PA0105 | International application |
Patent event date: 20201029 Patent event code: PA01051R01D Comment text: International Patent Application |
|
PG1501 | Laying open of application | ||
A201 | Request for examination | ||
PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20211228 Comment text: Request for Examination of Application |
|
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20231030 Patent event code: PE09021S01D |
|
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20240516 |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20240618 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 20240619 End annual number: 3 Start annual number: 1 |
|
PG1601 | Publication of registration |