KR102675455B1 - 양자점을 이용한 발광형 표지판 - Google Patents
양자점을 이용한 발광형 표지판 Download PDFInfo
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- KR102675455B1 KR102675455B1 KR1020220017153A KR20220017153A KR102675455B1 KR 102675455 B1 KR102675455 B1 KR 102675455B1 KR 1020220017153 A KR1020220017153 A KR 1020220017153A KR 20220017153 A KR20220017153 A KR 20220017153A KR 102675455 B1 KR102675455 B1 KR 102675455B1
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 44
- 238000004020 luminiscence type Methods 0.000 title 1
- 239000011347 resin Substances 0.000 claims abstract description 76
- 229920005989 resin Polymers 0.000 claims abstract description 76
- AMFGWXWBFGVCKG-UHFFFAOYSA-N Panavia opaque Chemical compound C1=CC(OCC(O)COC(=O)C(=C)C)=CC=C1C(C)(C)C1=CC=C(OCC(O)COC(=O)C(C)=C)C=C1 AMFGWXWBFGVCKG-UHFFFAOYSA-N 0.000 claims description 14
- 239000003085 diluting agent Substances 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 8
- HWSSEYVMGDIFMH-UHFFFAOYSA-N 2-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOCCOC(=O)C(C)=C HWSSEYVMGDIFMH-UHFFFAOYSA-N 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000013307 optical fiber Substances 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 4
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadec-1-ene Chemical compound CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 235000012489 doughnuts Nutrition 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 3
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XVDBWWRIXBMVJV-UHFFFAOYSA-N n-[bis(dimethylamino)phosphanyl]-n-methylmethanamine Chemical compound CN(C)P(N(C)C)N(C)C XVDBWWRIXBMVJV-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- WIYVVIUBKNTNKG-UHFFFAOYSA-N 6,7-dimethoxy-3,4-dihydronaphthalene-2-carboxylic acid Chemical compound C1CC(C(O)=O)=CC2=C1C=C(OC)C(OC)=C2 WIYVVIUBKNTNKG-UHFFFAOYSA-N 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- SXMUXFDPJBTNRM-UHFFFAOYSA-N [2-hydroxy-3-[4-[2-[4-[2-hydroxy-3-(2-methylprop-2-enoyloxy)propoxy]phenyl]propan-2-yl]phenoxy]propyl] 2-methylprop-2-enoate;2-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOCCOC(=O)C(C)=C.C1=CC(OCC(O)COC(=O)C(=C)C)=CC=C1C(C)(C)C1=CC=C(OCC(O)COC(=O)C(C)=C)C=C1 SXMUXFDPJBTNRM-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000012045 crude solution Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
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Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H01L31/125—
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/20—Optical components
- H02S40/22—Light-reflecting or light-concentrating means
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/34—Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
- H02S40/345—Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes with cooling means associated with the electrical connection means, e.g. cooling means associated with or applied to the junction box
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/18—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
Abstract
Description
도 2는 본 발명의 일 실시예에 따른 발광형 표지판의 분리 사시도이다.
도 3은 본 발명의 일 실시예에 따른 레진층을 구성하는 혼합레진의 점도를 측정한 결과이다.
도 4는 본 발명의 일 실시예에 따른 레진층을 구성하는 혼합레진의 온도에 따른 점보의 변화를 측정한 결과이다.
도 5는 본 발명의 일 실시예에 따른 양자점이 혼합된 레진층의 휘도 및 CIE 색공간 변화를 측정한 결과이다.
Name | Mixing(g) | |
Bis-GMA | TEGDMA | |
BT50 | 150 | 50 |
BT55 | 150 | 55 |
BT60 | 150 | 60 |
BT65 | 150 | 65 |
BT70 | 150 | 70 |
갈륨 전구체 농도 (mol/%) |
PL 발광 파장 (㎚) |
절대양자효율 (%) |
0 | 524 | 88 |
0.01 | 522 | 91 |
0.03 | 516 | 82 |
0.05 | 513 | 70 |
0 | 621 | 87 |
0.01 | 618 | 90 |
0.03 | 611 | 81 |
0.05 | 606 | 73 |
110 태양전지 120 표시패널부
130 광원부 131 발광소자
132 광원케이스
133a 양자점(적색) 133b 양자점(녹색)
134 레진층 135 수용부
Claims (7)
- 태양전지(110)와, 표시패널부(120)와, 광원부(130)와, 구동회로를 포함하는 발광형 표지판(100)을 포함하며,
상기 광원부(130)가 구동회로에 전기적으로 연결된 발광다이오드(LED)가 구비된 발광소자(131), 상기 발광소자(131)를 내부에 수용하면서 표시패널부(120)와 동일한 크기를 가지는 광원케이스(132), 및 상기 발광소자(131)와 일정 간격으로 이격되고 양자점이 혼합된 혼합레진으로 이루어진 레진층(134)을 포함하며,
상기 혼합레진은 Bis-GMA(bisphenol A-glycidyl methacrylate) 레진과 희석제가 70 내지 73: 27 내지 30 중량비로 혼합된 것을 특징으로 하는 발광형 표지판. - 제1항에 있어서, 상기 레진층(134)은 양자점이 혼합되어 있고, 표시패널부(120)에서 표시되는 형성 패턴과 일치하는 패턴으로 발광소자(131)의 상부에 일정 간격으로 이격되어 위치하는 것을 특징으로 하는 발광형 표지판.
- 제1항에 있어서, 상기 레진층(134)은 양자점의 발광 색상에 따라 1 내지 3개의 층으로 형성된 것을 특징으로 하는 발광형 표지판.
- 제1항에 있어서, 상기 레진층(134)의 혼합레진은 점도가 27℃에서 1,400 내지 1,600cps인 것을 특징으로 하는 발광형 표지판.
- 삭제
- 제1항에 있어서, 상기 희석제는 TEDGMA(Triethylene glycol dimethacrylate)인 것을 특징으로 하는 발광형 표지판.
- 삭제
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020220017153A KR102675455B1 (ko) | 2022-02-09 | 2022-02-09 | 양자점을 이용한 발광형 표지판 |
Applications Claiming Priority (1)
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KR1020220017153A KR102675455B1 (ko) | 2022-02-09 | 2022-02-09 | 양자점을 이용한 발광형 표지판 |
Publications (2)
Publication Number | Publication Date |
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KR20230120500A KR20230120500A (ko) | 2023-08-17 |
KR102675455B1 true KR102675455B1 (ko) | 2024-06-17 |
Family
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KR1020220017153A Active KR102675455B1 (ko) | 2022-02-09 | 2022-02-09 | 양자점을 이용한 발광형 표지판 |
Country Status (1)
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Citations (1)
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KR200293529Y1 (ko) * | 2002-04-26 | 2002-10-31 | 최정식 | 태양전지를 적용한 자체발광 이엘 도로광고물 |
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KR101009603B1 (ko) | 2010-09-01 | 2011-01-20 | (주)피엘티 | 발광형 표지판 |
KR101098857B1 (ko) | 2011-08-01 | 2011-12-26 | (주)피엘티 | 광케이블을 이용한 발광형 표지판 |
CN104838437B (zh) * | 2012-10-04 | 2017-12-22 | 纳米技术有限公司 | 使用量子点的照明标识 |
KR20160001267U (ko) * | 2014-10-08 | 2016-04-18 | 대우조선해양 주식회사 | 안전 표시용 스티커 |
KR101918433B1 (ko) * | 2014-12-25 | 2018-11-13 | 쇼와 덴코 가부시키가이샤 | 수지 조성물, 컬러 필터, 그 제조 방법 및 화상 표시 소자 |
KR101550641B1 (ko) | 2015-03-31 | 2015-09-08 | 주식회사 태성 | 광섬유 발광형 교통 표지판 |
KR101835819B1 (ko) | 2017-08-11 | 2018-03-08 | 주식회사 에이엘테크 | 광섬유 발광형 표지 장치 |
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KR200293529Y1 (ko) * | 2002-04-26 | 2002-10-31 | 최정식 | 태양전지를 적용한 자체발광 이엘 도로광고물 |
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