KR102582652B1 - 레이저 결정화 장치 - Google Patents
레이저 결정화 장치 Download PDFInfo
- Publication number
- KR102582652B1 KR102582652B1 KR1020160175628A KR20160175628A KR102582652B1 KR 102582652 B1 KR102582652 B1 KR 102582652B1 KR 1020160175628 A KR1020160175628 A KR 1020160175628A KR 20160175628 A KR20160175628 A KR 20160175628A KR 102582652 B1 KR102582652 B1 KR 102582652B1
- Authority
- KR
- South Korea
- Prior art keywords
- diffraction grating
- lens
- laser beam
- crystallization device
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005499 laser crystallization Methods 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 230000003287 optical effect Effects 0.000 claims abstract description 26
- 230000001154 acute effect Effects 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000005350 fused silica glass Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 16
- 239000010409 thin film Substances 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910020751 SixGe1-x Inorganic materials 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06817—Noise reduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
- B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/095—Refractive optical elements
- G02B27/0955—Lenses
- G02B27/0961—Lens arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/467—Control electrodes for flat display tubes, e.g. of the type covered by group H01J31/123
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
- H01J9/241—Manufacture or joining of vessels, leading-in conductors or bases the vessel being for a flat panel display
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0071—Beam steering, e.g. whereby a mirror outside the cavity is present to change the beam direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
- H01S3/08009—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection using a diffraction grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
- H10D30/6745—Polycrystalline or microcrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
- H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
- H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
- H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
- H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Recrystallisation Techniques (AREA)
- Laser Beam Processing (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Abstract
Description
도 2는 본 발명의 레이저 결정화 장치를 나타낸 도면이다.
도 3은 도 2의 회절 격자에 대한 사시도이다.
도 4는 도 2의 광원, 회절 격자, 제 1 렌즈 어레이 및 제 2 렌즈 어레이에 대한 확대도이다.
도 5는 도 2의 광중첩부로부터 출사된 레이저 빔의 장축 방향으로의 세기를 나타낸 도면이다.
도 6은 도 2의 광원, 회절 격자, 제 1 렌즈 어레이 및 제 2 렌즈 어레이에 대한 다른 실시예의 확대도이다.
300: 회절 격자 300a: 입사면
300b: 출사면 112a: 서브 레이저 빔
401: 제 1 렌즈 어레이 402: 제 2 렌즈 어레이
401a: 제 1 렌즈 402a: 제 2 렌즈
311: 법선 L1-L4: 서브 광선
350: 격자 α: 입사각
f: 초점 W1, W2: 폭
Claims (19)
- 복수의 서브 빔을 포함하는 레이저 빔을 출사하는 광원;
상기 광원으로부터의 레이저 빔을 입사 받고, 그 입사된 레이저 빔의 진로 및 크기를 변경하여 출력하는 회절 격자;
상기 회절 격자로부터의 레이저 빔을 분할하는 광분할부; 및
상기 광분할부로부터의 분할된 레이저 빔을 중첩하여 기판으로 조사하는 광중첩부를 포함하며;
상기 광원으로부터 상기 회절 격자의 입사면에 조사된 레이저 빔과 상기 회절 격자의 출사면에 대한 법선이 이루는 각은 예각이고,
상기 광 분할부는,
상기 회절 격자와 상기 광중첩부 사이에 위치하며, 상기 회절 격자로부터의 레이저 빔이 입사되는 복수의 반원기둥 형상의 제1 렌즈들을 포함하는 제 1 렌즈 어레이를 포함하고,
인접한 상기 제1 렌즈들을 통과하는 서브 빔들 간의 위상차는 상기 레이저 빔의 공간적 가간섭성 길이보다 큰, 레이저 결정화 장치. - 제 1 항에 있어서,
상기 각은 5도 내지 65도인 레이저 결정화 장치. - 제 1 항에 있어서,
상기 회절 격자의 회절각은 0도인 레이저 결정화 장치. - 제 1 항에 있어서,
상기 회절 격자의 파장 길이는 343nm인 레이저 결정화 장치. - 제 1 항에 있어서,
상기 광 분할부는,
상기 제 1 렌즈 어레이와 상기 광중첩부 사이에 위치하며, 상기 제 1 렌즈 어레이로부터의 레이저 빔이 입사되는 복수의 반원기둥 형상의 제 2 렌즈들을 포함하는 제 2 렌즈 어레이를 포함하는 레이저 결정화 장치. - 제 5 항에 있어서,
상기 회절 격자와 상기 제 1 렌즈 어레이 사이의 거리는 100mm 내지 1000mm인 레이저 결정화 장치. - 제 5 항에 있어서,
상기 제 1 렌즈 어레이와 상기 제 2 렌즈 어레이 사이의 거리는 135mm인 레이저 결정화 장치. - 제 5 항에 있어서,
제 1 렌즈는 3mm의 두께 및 110.8mm의 곡률을 갖는 레이저 결정화 장치. - 제 5 항에 있어서,
제 2 렌즈는 3mm의 두께 및 25.7mm의 곡률을 갖는 레이저 결정화 장치. - 제 5 항에 있어서,
상기 제 1 렌즈 어레이, 상기 제 2 렌즈 어레이 및 상기 회절 격자 중 적어도 하나는 용융 실리카(fused silica)를 포함하는 물질로 이루어진 레이저 결정화 장치. - 제 1 항에 있어서,
상기 광중첩부는 적어도 하나의 집광 렌즈를 포함하는 레이저 결정화 장치. - 제 11 항에 있어서,
상기 적어도 하나의 집광 렌즈는,
상기 광중첩부와 상기 기판 사이에 위치한 제 1 집광 렌즈; 및
상기 제 1 집광 렌즈와 상기 기판 사이에 위치한 제 2 집광 렌즈를 포함하는 레이저 결정화 장치. - 제 12 항에 있어서,
상기 제 1 집광 렌즈의 출사면 및 상기 제 2 집광 렌즈의 입사면이 볼록한 레이저 결정화 장치. - 제 12 항에 있어서,
상기 제 1 집광 렌즈와 상기 제 2 집광 렌즈 간의 거리는 14000mm인 레이저 결정화 장치. - 제 12 항에 있어서,
상기 제 2 집광 렌즈와 상기 기판 간의 거리는 500mm인 레이저 결정화 장치. - 제 12 항에 있어서,
상기 제 1 집광 렌즈는 40mm의 두께 및 6822mm의 곡률을 갖는 레이저 결정화 장치. - 제 12 항에 있어서,
제 2 집광 렌즈는 50mm의 두께 및 6822mm의 곡률을 갖는 레이저 결정화 장치. - 제 12 항에 있어서,
상기 제 1 집광 렌즈 및 상기 제 2 집광 렌즈 중 적어도 하나는 용융 실리카(fused silica)를 포함하는 물질로 이루어진 레이저 결정화 장치. - 제 1 항에 있어서,
상기 회절 격자는 투과형 블레이즈드 격자(blazed transmission grating)인 레이저 결정화 장치.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020160175628A KR102582652B1 (ko) | 2016-12-21 | 2016-12-21 | 레이저 결정화 장치 |
EP17208649.8A EP3340402B1 (en) | 2016-12-21 | 2017-12-19 | Laser polycrystallization apparatus |
US15/848,086 US10403499B2 (en) | 2016-12-21 | 2017-12-20 | Laser polycrystallization apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020160175628A KR102582652B1 (ko) | 2016-12-21 | 2016-12-21 | 레이저 결정화 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20180072906A KR20180072906A (ko) | 2018-07-02 |
KR102582652B1 true KR102582652B1 (ko) | 2023-09-25 |
Family
ID=60781753
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020160175628A Active KR102582652B1 (ko) | 2016-12-21 | 2016-12-21 | 레이저 결정화 장치 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10403499B2 (ko) |
EP (1) | EP3340402B1 (ko) |
KR (1) | KR102582652B1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102582652B1 (ko) * | 2016-12-21 | 2023-09-25 | 삼성디스플레이 주식회사 | 레이저 결정화 장치 |
IT201700114962A1 (it) * | 2017-10-12 | 2019-04-12 | Automotive Lighting Italia Spa | Attrezzatura di saldatura laser simultanea di un fanale automobilistico e metodo di saldatura laser simultanea di un fanale automobilistico |
KR102516486B1 (ko) | 2017-12-05 | 2023-04-03 | 삼성디스플레이 주식회사 | 레이저 결정화 장치 |
KR102688794B1 (ko) * | 2019-01-11 | 2024-07-29 | 삼성디스플레이 주식회사 | 레이저 결정화 장치 |
EP3855219B1 (en) * | 2020-01-21 | 2024-09-18 | Focuslight Technologies Inc. | Diffuser device |
KR102798220B1 (ko) * | 2021-12-29 | 2025-04-23 | 주식회사 아큐레이저 | 빔의 조사 영역을 재배치하는 빔 재배치부를 포함하여 이루어진 레이저 조사 장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001183605A (ja) * | 1999-02-04 | 2001-07-06 | Matsushita Electric Ind Co Ltd | 回折、散乱をなす光学素子を使用した投光、表示装置 |
JP2003090959A (ja) * | 2001-09-17 | 2003-03-28 | Ricoh Co Ltd | レーザ照明光学系、該光学系を用いた露光装置、レーザ加工機、及び投射装置 |
WO2004027493A1 (ja) * | 2002-09-20 | 2004-04-01 | Nippon Sheet Glass Company, Limited | 回折格子を用いた分光装置 |
JP2008052826A (ja) * | 2006-08-24 | 2008-03-06 | Funai Electric Co Ltd | 光ピックアップ装置 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3301054B2 (ja) * | 1996-02-13 | 2002-07-15 | 株式会社半導体エネルギー研究所 | レーザー照射装置及びレーザー照射方法 |
JPH09234579A (ja) * | 1996-02-28 | 1997-09-09 | Semiconductor Energy Lab Co Ltd | レーザー照射装置 |
EP1043110B1 (en) * | 1999-04-02 | 2006-08-23 | Murata Manufacturing Co., Ltd. | Laser method for machining through holes in a ceramic green sheet |
JP4748836B2 (ja) * | 1999-08-13 | 2011-08-17 | 株式会社半導体エネルギー研究所 | レーザ照射装置 |
JP3365500B2 (ja) | 2000-01-19 | 2003-01-14 | ウシオ電機株式会社 | 狭帯化ArFエキシマレーザ装置 |
AU2001274079A1 (en) | 2000-05-30 | 2001-12-11 | Thomson Licensing S.A. | Device for reading and/or writing optical recording media |
TW523791B (en) * | 2000-09-01 | 2003-03-11 | Semiconductor Energy Lab | Method of processing beam, laser irradiation apparatus, and method of manufacturing semiconductor device |
TWI240151B (en) | 2000-10-10 | 2005-09-21 | Asml Netherlands Bv | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
US6665471B1 (en) * | 2001-08-13 | 2003-12-16 | Nlight Photonics Corporation | System and method for optimizing the performance of multiple gain element laser |
DE10345177B3 (de) | 2003-09-29 | 2004-10-21 | Innovavent Gmbh | Linsensystem zum Homogenisieren von Laserpulsen |
JP4579575B2 (ja) * | 2004-05-14 | 2010-11-10 | 株式会社半導体エネルギー研究所 | レーザ照射方法及びレーザ照射装置 |
JP5072197B2 (ja) * | 2004-06-18 | 2012-11-14 | 株式会社半導体エネルギー研究所 | レーザ照射装置およびレーザ照射方法 |
WO2007069516A1 (en) * | 2005-12-16 | 2007-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device |
JP2007214527A (ja) * | 2006-01-13 | 2007-08-23 | Ihi Corp | レーザアニール方法およびレーザアニール装置 |
US7662703B2 (en) * | 2006-08-31 | 2010-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing crystalline semiconductor film and semiconductor device |
US7436588B2 (en) * | 2006-10-05 | 2008-10-14 | Northrop Grumman Corporation | Method and system for hybrid coherent and incoherent diffractive beam combining |
TWI394152B (zh) * | 2007-07-30 | 2013-04-21 | Sony Corp | Objective lens, optical read / write head and optical disc device |
EP2237079B1 (de) | 2009-04-03 | 2013-05-29 | Innovavent GmbH | Vorrichtung zum Homogenisieren kohärenter Strahlung |
US8432613B2 (en) * | 2009-04-21 | 2013-04-30 | Applied Materials, Inc. | Multi-stage optical homogenization |
US8902506B2 (en) | 2010-09-30 | 2014-12-02 | Panasonic Corporation | Laser speckle reduction element |
KR101298019B1 (ko) * | 2010-12-28 | 2013-08-26 | (주)큐엠씨 | 레이저 가공 장치 |
US9190807B2 (en) * | 2013-12-16 | 2015-11-17 | TeraDiode, Inc. | Method for improving performance of wavelength beam combining diode laser systems |
CN105932545A (zh) * | 2016-07-06 | 2016-09-07 | 上海高意激光技术有限公司 | 一种激光阵列合束装置 |
KR102582652B1 (ko) * | 2016-12-21 | 2023-09-25 | 삼성디스플레이 주식회사 | 레이저 결정화 장치 |
-
2016
- 2016-12-21 KR KR1020160175628A patent/KR102582652B1/ko active Active
-
2017
- 2017-12-19 EP EP17208649.8A patent/EP3340402B1/en active Active
- 2017-12-20 US US15/848,086 patent/US10403499B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001183605A (ja) * | 1999-02-04 | 2001-07-06 | Matsushita Electric Ind Co Ltd | 回折、散乱をなす光学素子を使用した投光、表示装置 |
JP2003090959A (ja) * | 2001-09-17 | 2003-03-28 | Ricoh Co Ltd | レーザ照明光学系、該光学系を用いた露光装置、レーザ加工機、及び投射装置 |
WO2004027493A1 (ja) * | 2002-09-20 | 2004-04-01 | Nippon Sheet Glass Company, Limited | 回折格子を用いた分光装置 |
JP2008052826A (ja) * | 2006-08-24 | 2008-03-06 | Funai Electric Co Ltd | 光ピックアップ装置 |
Also Published As
Publication number | Publication date |
---|---|
EP3340402A2 (en) | 2018-06-27 |
EP3340402A3 (en) | 2018-09-26 |
EP3340402B1 (en) | 2022-01-26 |
US20180174836A1 (en) | 2018-06-21 |
US10403499B2 (en) | 2019-09-03 |
KR20180072906A (ko) | 2018-07-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102582652B1 (ko) | 레이저 결정화 장치 | |
KR102589766B1 (ko) | 레이저 장치 | |
US10957541B2 (en) | Short pulse fiber laser for LTPS crystallization | |
JP5133158B2 (ja) | 多重ビームレーザー装置 | |
US10437072B2 (en) | Line beam forming device | |
US20170087664A1 (en) | Polarization module and laser apparatus including the same | |
KR20080042690A (ko) | 광학장치 및 결정화장치 | |
CN104283099B (zh) | 执行激光晶化的方法 | |
KR100900685B1 (ko) | 다중 빔 레이저 장치 및 빔 스플리터 | |
JP7525989B2 (ja) | レーザ処理装置及びレーザ光モニタ方法 | |
US20060138351A1 (en) | Laser anneal apparatus | |
KR20210141799A (ko) | 레이저 장치 및 표시 장치의 제조 방법 | |
KR100862449B1 (ko) | 다중 빔 레이저 장치 | |
KR102796148B1 (ko) | 실리콘 결정화 장치 | |
KR102688794B1 (ko) | 레이저 결정화 장치 | |
KR100849820B1 (ko) | 다중 빔 레이저 장치 및 빔 스플리터 | |
KR20130057759A (ko) | 결정화 장치, 결정화 방법 및 유기 발광 표시 장치의 제조 방법 | |
KR102327231B1 (ko) | 레이저 결정화 장치의 모니터링 시스템 및 모니터링 방법 | |
JP2007189168A (ja) | レーザー照射光学系 | |
KR100862448B1 (ko) | 다중 빔 레이저 장치 | |
CN114121625A (zh) | 激光装置 | |
KR20210059131A (ko) | 레이저 결정화 장치 | |
JP4834790B1 (ja) | 光照射装置 | |
JP2011139082A (ja) | 光変調素子、結晶化装置、結晶化方法、薄膜半導体基板の製造装置、薄膜半導体基板の製造方法、薄膜半導体装置、薄膜半導体装置の製造方法および表示装置 | |
KR20130042305A (ko) | 레이저 결정화 장치 및 레이저 결정화 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20161221 |
|
PG1501 | Laying open of application | ||
A201 | Request for examination | ||
PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20211206 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 20161221 Comment text: Patent Application |
|
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20230220 Patent event code: PE09021S01D |
|
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20230811 |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20230920 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 20230920 End annual number: 3 Start annual number: 1 |
|
PG1601 | Publication of registration |