KR102574851B1 - Slurry composition for chemical mechanical polishing - Google Patents

Abstract

Disclosed is a slurry composition for chemical mechanical polishing that can be applied to a semiconductor manufacturing process, etc., including an additive represented by Formula 1 below, a stabilizer, an abrasive, an oxidizing agent, and a catalyst. The composition can lower the selectivity of the polishing rate of the silicon nitride film compared to the polishing rate of tungsten without impairing the characteristics of the tungsten polishing rate.
[Formula 1]

Description

Chemical mechanical polishing slurry composition {SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING}

The present invention relates to a chemical mechanical polishing slurry composition that can be applied to semiconductor manufacturing processes and the like.

Semiconductors have a structure in which thin films are stacked on a wafer through a deposition process. The thin film is composed of a metal film using tungsten, copper, aluminum, etc. to act as a wiring plug, or an insulating film using a silicon nitride film or silicon oxide film to electrically separate a metal film layer from an internal connection layer.

In recent years, as the design rules of semiconductor devices have become smaller, the semiconductor manufacturing process has also been further refined. However, as the design rule is miniaturized, the level difference between the surfaces of the interlayer films also increases, limiting stacking. Therefore, a planarization process must be performed to remove the level difference of a specific film formed on the substrate.

Processes for realizing film planarization include processes such as SOG, etch back, and BPSG reflow. Chemical mechanical polishing (CMP), which has advantages, is the most used recently.

In general, a CMP slurry composition for polishing tungsten has been used to polish tungsten using a silicon nitride film as a polishing stop film. Accordingly, a slurry composition having a low silicon nitride film removal rate and a high tungsten removal rate has been used.

However, in the case of polishing using such a slurry composition, the process time may be long due to the low polishing rate for the silicon nitride film. Accordingly, problems such as damage to the tungsten plug and erosion or dishing may occur.

Therefore, there is a need to develop a chemical mechanical polishing slurry composition capable of simultaneously polishing tungsten and silicon nitride films and lowering the selectivity ratio of the polishing rate of the silicon nitride film to the polishing rate of tungsten.

Korean Registered Patent Publication No. 10-1470979 (2014.12.03) Japanese Patent Registration No. 5013732 (2012.06.15) Japanese Unexamined Patent Publication No. 2009-164188 (2009.07.23)

The present invention was created to solve the above-mentioned problems, and by increasing the polishing rate of the silicon nitride film, lowering the selectivity ratio of the silicon nitride film polishing rate to the tungsten polishing rate, and facilitating the removal of the silicon nitride film A chemical mechanical polishing slurry composition is providing

As a technical means for achieving the above technical problem, the chemical mechanical polishing slurry composition according to one aspect of the present invention includes an additive represented by Formula 1, a stabilizer, an abrasive, an oxidizing agent, and an iron catalyst.

[Formula 1]

In the above formula, R ₁ and R ₂ are each independently hydrogen (H), heavy hydrogen (D), a substituted or unsubstituted C1 to C20 alkyl group, or a carboxyl group (COOH), but at least one of R ₁ and R ₂ is It may be a carboxyl group (COOH),

R ₃ and R ₄ are each independently hydrogen (H), heavy hydrogen (D), a hydroxy group (OH), a carboxyl group (COOH), a substituted or unsubstituted C1 to C20 alkyl group, or a C1 to C20 alkoxy group, At least one of R ₃ and R ₄ may be a hydroxy group (OH), a carboxyl group (COOH), a substituted or unsubstituted C1 to C20 alkyl group, or a C1 to C20 alkoxy group.

Here, the additive represented by Chemical Formula 1 may be a material represented by Chemical Formula 2 or Chemical Formula 3 below.

[Formula 2]

[Formula 3]

The stabilizer may be an amino acid that forms a chelate bond with iron ions.

0.01 to 0.5% by weight of the additive, 0.01 to 0.5% by weight of the stabilizer, 0.1 to 5.0% by weight of the abrasive, and 0.1 to 5.0% by weight of the oxidizing agent, based on 100% by weight of the total amount of the chemical mechanical polishing slurry composition, iron catalyst in an amount of 10 to 300 ppm, the remainder being deionized water.

The chemical mechanical polishing slurry composition may further include aspartic acid as an auxiliary additive.

The auxiliary additive may be included in an amount of 0.01 to 0.2% by weight based on 100% by weight of the total amount of the composition.

The chemical mechanical polishing slurry composition may further include a pH adjusting agent, and the pH of the composition may be 2 to 3.

The chemical mechanical polishing slurry composition may polish tungsten and silicon nitride films.

The chemical mechanical polishing slurry composition may have a ratio of a tungsten polishing rate (Å/min) and a silicon nitride film polishing rate (Å/min) of 3:1 to 4:1.

A method for polishing a substrate including tungsten and silicon nitride films according to another aspect of the present invention includes depositing a tungsten-containing metal film on a substrate; forming a silicon nitride film on the substrate; and polishing the substrate with the aforementioned chemical mechanical polishing slurry composition.

The chemical mechanical polishing slurry composition according to the present invention can lower the selectivity between tungsten and silicon nitride by increasing the polishing rate of the silicon nitride film without excessively degrading the tungsten polishing rate characteristics, and can facilitate the removal of the silicon nitride layer. can In addition, due to the lowered selectivity, chemical mechanical polishing may be possible while minimizing damage to the tungsten plug, erosion, dishing, and the like.

Hereinafter, the present invention will be described in more detail. However, this is presented as an example, and the present invention is not limited thereby, and the present invention is only defined by the scope of the claims to be described later.

In the present specification, "substituted" means substituted with an alkyl group, a hydroxy group, an amine group, a carboxy group, a sulfone group, a sulfonic acid group, or a carboxylic acid ester group unless otherwise defined.

In this specification, unless otherwise defined, "a combination of these" means that two or more substances are mixed, two or more substituents are bonded with a linking group, or two or more substituents are bonded by condensation.

Unless otherwise defined, the term "alkyl group" in the present specification means a "saturated alkyl group" that does not contain any alkene or alkyne groups. The alkyl group may be branched, straight-chain or cyclic. The alkyl group may be a C1 to C20 alkyl group, and more specifically, a C1 to C6 lower alkyl group, a C7 to C10 intermediate alkyl group, or a C11 to C20 higher alkyl group. For example, a C1 to C4 alkyl group means that there are 1 to 4 carbon atoms in the alkyl chain, which is methyl, ethyl, propyl, iso-propyl, n-butyl, iso-butyl, sec-butyl and t-butyl. indicates that it is selected from the group consisting of Typical alkyl groups include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, t-butyl, pentyl, hexyl, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl and the like. .

Chemical-mechanical polishing (CMP) is a type of surface planarization technology for semiconductor devices. In general, the CMP process is performed through mechanical polishing using a polishing pad and chemical action of a slurry for CMP. At this time, the polishing efficiency of the CMP slurry can have a great influence on semiconductor productivity.

When the CMP slurry composition is applied to a semiconductor wafer, the polishing rate of each component included in the semiconductor wafer may vary depending on the physical properties of each component, the type of abrasive, and the content and type of components included in the slurry composition.

The present invention provides a chemical mechanical polishing slurry composition for polishing tungsten, which improves the polishing selectivity of the silicon nitride film to tungsten by increasing the polishing rate of the silicon nitride film.

The chemical mechanical polishing slurry composition according to one aspect of the present invention includes an additive, a stabilizer, an abrasive, an oxidizing agent and an iron catalyst.

The additive may be a pyridine-based compound represented by Formula 1 below.

[Formula 1]

In Formula 1, R ₁ and R ₂ are each independently hydrogen (H), heavy hydrogen (D), a substituted or unsubstituted C1 to C20 alkyl group, or a carboxyl group (COOH), but at least one of R ₁ and R ₂ One may be a carboxyl group (COOH), R ₃ and R ₄ are each independently hydrogen (H), heavy hydrogen (D), a hydroxyl group (OH), a carboxyl group (COOH), substituted or unsubstituted C1 to C20 An alkyl group or a C1 to C20 alkoxy group, wherein at least one of R ₃ and R ₄ is a hydroxyl group (OH), a carboxyl group (COOH), a substituted or unsubstituted C1 to C20 alkyl group, or a C1 to C20 alkoxy group. there is.

The additive represented by Chemical Formula 1 may be a pyridine compound in which one residue is substituted with a carboxyl group and one or two residues are substituted with hydroxyl groups.

More specifically, the additive represented by Formula 1 may be a material represented by Formula 2 or Formula 3 below.

[Formula 2]

[Formula 3]

The additive represented by Formula 2 is 6-hydroxypyridine-3-carboxylic acid (CAS No. 5006-66-6). It is also named 2-Hydroxy-5-pyridinecarboxylic acid or 6-Hydroxynicotinic acid, the empirical formula is C ₆ H ₅ NO ₃ and the molecular weight is 139.11 g/mol.

The additive represented by Formula 3 is 2,6-dihydroxypyridine-4-carboxylic acid (CAS No. 99-11-6). It is also named 2,6-Dihydroxyisonicotinic acid or citrazinic acid, has an empirical formula of C ₆ H ₅ NO ₄ and a molecular weight of 155.11 g/mol.

The additive may be included for the purpose of widening the contact area between the composition and the polishing target by increasing the zeta potential of the chemical mechanical polishing slurry composition and thereby increasing stability and dispersibility. For example, when 2,6-dihydroxypyridine-4-carboxylic acid is added at an acidic pH of 3.0 or less, the zeta potential may be increased by +1.5 to 2.5, and the zeta potential may increase during polishing of silicon nitride on a substrate. The particle dispersion force and the contact area increase, and accordingly, the polishing performance of the slurry can be increased.

The additive may be 0.01 to 0.5% by weight based on the total weight of the composition. If it is less than 0.01% by weight, the polishing of the silicon nitride film cannot be improved, and if it is more than 0.5% by weight, the polishing rate of tungsten may be hindered.

The stabilizer may be included for the purpose of preventing a decrease in the polishing rate by making it possible to maintain the concentration of iron ions in the solution by inhibiting the binding of iron ions with other compositions by forming a chelate bond with the iron ions of the iron catalyst.

The stabilizer is preferably an amino acid that binds to iron ions, such as tartaric acid, malonic acid, malic acid, citric acid, maleic acid, fumaric acid, oxalic acid, triethanolamine, succinic acid, glutaric acid, citraconic acid, itaconic acid, glycolic acid, thio It may be an amino acid such as glycolic acid, lactic acid, isocystric acid, gluconic acid, oxaloacetic acid, glycine, alanine, beta-alanine, valine, or leucine. Among them, amino acids such as tartaric acid, malonic acid, malic acid, citric acid, maleic acid, oxalic acid, fumaric acid, triethanolamine, glycine, alanine, beta-alanine, valine, and leucine may be used, and these may be used alone or in combination of two or more. can be used in combination.

The stabilizer may be more preferably malonic acid. The stabilizer promotes the decomposition of the oxidizing agent as a result of the reaction with the oxidizing agent by the iron catalyst, and prevents the loss of function of the oxidizing agent, thereby maintaining the polishing performance of the chemical mechanical polishing slurry composition for a long period of time. there is.

The stabilizer may be 0.01 to 0.5% by weight based on the total weight of the composition. If the content is less than 0.01% by weight, since the stabilizer cannot form a bond with iron ions, there is a problem that the catalyst and the oxidizing agent react and the oxidizing agent deteriorates. Formation may cause a problem that the function of the catalyst is lowered.

The abrasive is included for the purpose of polishing tungsten and silicon nitride films, and common metal oxide particles may be used. Preferably, it may be ceria (CeO ₂ ), silica (SiO ₂ ), alumina (Al ₂ O ₃ ), zirconia (ZrO ₂ ), titania (TiO ₂ ), germania (GeO ₂ ) or a mixture thereof, more preferably Preferably, colloidal silica may be used.

The colloidal silica is also referred to as silica sol, and means that solid silica particles are stably dispersed in a liquid such as water or organic solvent without precipitating or aggregating. do. The colloidal silica may be prepared by various methods such as dialysis, electrodialysis, peptization, acid-neutralization, and ion exchange.

The particle size of the colloidal silica used as the abrasive is 20 nm to 120 nm and is preferably spherical. As an abrasive, only colloidal silica of the same size may be used, or colloidal silica of different sizes may be mixed and used.

If the particle size of the abrasive is less than 20 nm, the polishing efficiency of the substrate may decrease, and if the particle size exceeds 120 nm, excessive scratching may occur.

The abrasive may be included in an amount of 0.1 to 0.5% by weight based on the total weight of the composition. If the abrasive is less than 0.1% by weight, there may be a problem that the polishing effect by the abrasive hardly occurs, and if it exceeds 5% by weight, mechanical polishing by the abrasive may cause excessive surface defects. can Therefore, the content of colloidal silica can be adjusted within the above range. More specifically, the content of colloidal silica may be 1 to 3% by weight.

The oxidizing agent may serve to oxidize the surface of the tungsten film into a brittle oxide that is easily polished by an abrasive.

The oxidizing agent may be an inorganic or organic peroxide containing one or more peroxide bonds (-OO-). The oxidizing agent is preferably hydrogen peroxide, urea ^hydrogen peroxide, monopersulfate (SO ₅ ^2- ), dipersulfate (S ₂ O ₈ ^2- ), peracetic acid, percarbonate, benzoyl peroxide, periodic acid, periodate salt, It may be at least one selected from perbromic acid, perboric acid, perborate salts, perchloroic acid and perchlorate salts, permanganates and permanganate salts, and mixtures thereof, and more preferably hydrogen peroxide.

The oxidizing agent may be included in an amount of 0.1 to 5.0% by weight based on the total weight of the slurry composition. When the amount of the oxidizing agent is less than 0.1% by weight, the oxidation reaction does not sufficiently occur, which may cause a problem in that the polishing rate of the metal film is slowed down. A problem in that it is difficult to control the polishing selectivity of silicon nitride may occur.

The iron catalyst may be included for the purpose of facilitating polishing of the metal film by transferring electrons from the metal being oxidized to the oxidizing agent.

The iron catalyst is preferably an inorganic salt of iron such as iron nitrate (II or III), iron sulfate (II or III), iron halide (II or III) including fluoride, chloride, bromide and iodide, and Organic ferric (II and III) compounds such as perchlorates, perbromates and periodates and acetates, acetylacetonates, citrates, gluconates, oxalates, phthalates, and succinates, and mixtures thereof and more preferably iron nitrate (II or III) or iron sulfate (II or III).

The catalyst may be included in a concentration of 10 to 300 ppm in the composition. If the iron catalyst is less than 10 ppm, it may be difficult to function as a catalyst, and if it is more than 300 ppm, the possibility of tungsten surface defects increases due to the excessive polishing rate for the metal film, and the formation of tungsten and silicon nitride A problem in which it is difficult to control the polishing selectivity may occur.

The chemical mechanical polishing slurry composition described above may further include aspartic acid (CAS No. 614-45-8) or a derivative thereof as an auxiliary additive. Aspartic acid is one of the amino acids obtained by hydrolyzing proteins. Its chemical formula is C ₄ H ₇ O ₄ N and its molecular weight is 133.10 g/mol.

The aspartic acid may be either D-aspartic acid (CAS No. 1783-96-6) or L-aspartic acid (CAS No. 56-84-8). The aspartic acid derivative may be one in which one or more residues of aspartic acid are substituted with an alkyl group or another functional group.

The aspartic acid or a derivative thereof has an acid dissociation constant (pKa) of about 3.9, and thus allows the chemical mechanical polishing slurry composition to have pH stability in an acidic region, thereby helping oxidation of the polishing target.

The auxiliary additive may be included in an amount of 0.01 to 0.5% by weight based on the total weight of the slurry composition. When the amount of the auxiliary additive is less than 0.01% by weight, a synergistic effect of polishing tungsten may not occur, and when it is greater than 0.5% by weight, it may be difficult to control the polishing selectivity of silicon nitride.

The chemical mechanical polishing slurry composition described above may further include a pH adjusting agent for adjusting pH.

The pH adjusting agent may include an acid adjusting agent or a basic adjusting agent, and preferably, the acid adjusting agent is hydrochloric acid (HCl), nitric acid (HNO ₃ ), sulfuric acid (H ₂ SO ₄ ), phosphoric acid (H ₂ PO ₄ ), It may be selected from carboxylic acids (CH ₃ COOH) and combinations thereof, and the basicity modifier is potassium hydroxide (KOH), sodium hydroxide (NaOH), ammonium hydroxide (NH ₄ OH), tetramethylamine hydroxide (TMAH), tetramethylamine (TMA) and combinations thereof. More preferably, nitric acid (HNO ₃ ), phosphoric acid (H ₂ PO ₄ ), or carboxylic acid (CH ₃ COOH) as an acidity regulator and potassium hydroxide (KOH) or sodium hydroxide (NaOH) as a basicity regulator may be used.

The pH of the CMP slurry composition for polishing tungsten controlled by the pH adjusting agent may be 2 to 3. This is related to the stabilization of the iron ion compound, and within the above range, the iron ion compound affecting the polishing rate of the silicon nitride film is stable, so that the polishing rate of the silicon nitride film can be improved and the slurry can be stabilized for a long period of time.

The chemical mechanical polishing slurry composition may have a ratio of a tungsten polishing rate to a silicon nitride film polishing rate of 3:1 to 15:1, more preferably 3:1 to 4:1.

As the chemical mechanical polishing slurry composition described above is added in the polishing process, the polishing rate of the silicon nitride film can be increased without lowering the tungsten polishing rate. In this case, the tungsten polishing rate may be substantially the same as that of the tungsten polishing rate when polishing is performed with the chemical mechanical polishing slurry composition not containing the additive. The polishing rate of the tungsten is specifically 90% or more, more preferably 93% or more can be achieved.

A method of polishing a substrate including a tungsten and silicon nitride film according to another aspect of the present invention includes depositing a tungsten-containing metal film on a substrate; forming a silicon nitride film on the substrate; and polishing the substrate with the chemical mechanical polishing slurry composition described above.

Since the description of the slurry composition is the same as that described above, repeated description will be omitted. For each step, a conventional deposition process and a polishing process may be applied.

On the other hand, when it is said that a certain part includes a certain component in this specification, it means that it may further include other components without excluding other components unless otherwise specified, and if a person skilled in the art It will be appreciated that various additional components may be included in the above-described chemical mechanical polishing slurry composition depending on the purpose and conditions under which it is used.

Hereinafter, embodiments of the present invention will be described in detail so that those skilled in the art can easily implement the present invention. However, the present invention may be embodied in many different forms and is not limited to the embodiments described herein.

Example One

A slurry for chemical mechanical polishing by mixing 0.05% by weight of 6-hydroxypyridine-3-carboxylic acid (HPCA) as an additive, 2% by weight of colloidal silica as an abrasive, a catalyst and stabilizer, an oxidizing agent, and excess deionized water (DIW) A composition was prepared. An appropriate amount of a pH adjusting agent was added to the prepared composition to adjust the pH to 2.3.

Example 2

A slurry for chemical mechanical polishing by mixing 0.02% by weight of 2,6-dihydroxypyridine-4-carboxylic acid (DPCA) as an additive, 2% by weight of colloidal silica as an abrasive, a catalyst and stabilizer, an oxidizing agent and excess deionized water A composition was prepared. An appropriate amount of a pH adjusting agent was added to the prepared composition to adjust the pH to 2.3.

Example 3

0.02% by weight of 2,6-dihydroxypyridine-4-carboxylic acid (DPCA) as an additive, 0.1% by weight of aspartic acid as an auxiliary additive, 2% by weight of colloidal silica as an abrasive, catalyst and stabilizer, oxidizing agent and A slurry composition for chemical mechanical polishing was prepared by mixing deionized water. An appropriate amount of a pH adjusting agent was added to the prepared composition to adjust the pH to 2.3.

Example 4

A slurry for chemical mechanical polishing by mixing 0.05% by weight of dihydroxypyridine carboxylic acid as an additive, 0.1% by weight of aspartic acid as an auxiliary additive, 2% by weight of colloidal silica as an abrasive, a catalyst, a stabilizer, an oxidizing agent, and excess deionized water A composition was prepared. An appropriate amount of a pH adjusting agent was added to the prepared composition to adjust the pH to 2.3.

comparative example One

A slurry composition for chemical mechanical polishing was prepared by mixing 2% by weight of colloidal silica, a catalyst and a stabilizer, an oxidizing agent, and excess deionized water as an abrasive. An appropriate amount of a pH adjusting agent was added to the prepared composition to adjust the pH to 2.3.

Experimental example : Tungsten and silicon nitride film Comparison of polishing rates of deposited wafers

As wafers used to observe the polishing characteristics, a 4x4 cm ² flat wafer in which tungsten was deposited to a thickness of 5000 Å and a 4x4 cm ² flat wafer in which a silicon nitride film was deposited to a thickness of 2000 Å were used.

As the polishing equipment, G&P Technology's Poli-400 was used, and as the polishing pad, DOW's IC1010 pad was used. The slurry and the polishing pad were brought into contact with the wafer, and polishing was performed while rotating at a spindle speed of 100 rpm. The results are summarized in Table 1 below.

division 6-hydroxypyridine-3-carboxylic acid 2,6-Dihydroxypyridine-4-carboxylic acid aspartic acid WRR
(Å/min) SiN RR
(Å/min) selectivity Comparative Example 1 - - - 1600 100 16:1 Example 1 0.05 - - 1500 110 14:1 Example 2 0.02 - 1300 410 3:1 Example 3 - 0.02 0.1 1600 390 4:1 Example 4 - 0.05 0.1 1500 450 3:1

As shown in Table 1, the chemical mechanical polishing slurry composition of Examples 1 to 4 has a higher polishing rate of the silicon nitride film without significantly lowering the polishing rate of tungsten than the chemical mechanical polishing slurry composition prepared in Comparative Example 1. It can be seen that the selectivity value is low.

In addition, when 2,6-dihydroxypyridine-4-carboxylic acid (DPCA) containing one more hydroxy group than 6-hydroxypyridine-3-carboxylic acid (HPCA) is used as an additive, the polishing rate of the silicon film It can be confirmed that is significantly increased, and it can be confirmed that the selection ratio is further improved.

In addition, when aspartic acid was used as an auxiliary additive in 2,6-dihydroxypyridine-4-carboxylic acid (DPCA), it was confirmed that the polishing rate of the silicon nitride film was increased while resolving the lowering of the tungsten polishing rate. .

The above description of the present invention is for illustrative purposes, and those skilled in the art can understand that it can be easily modified into other specific forms without changing the technical spirit or essential features of the present invention. will be. Therefore, the embodiments described above should be understood as illustrative in all respects and not limiting. For example, each component described as a single type may be implemented in a distributed manner, and similarly, components described as distributed may be implemented in a combined form.

The scope of the present invention is indicated by the following claims rather than the detailed description above, and all changes or modifications derived from the meaning and scope of the claims and equivalent concepts should be interpreted as being included in the scope of the present invention. do.

Claims (10)

A chemical mechanical polishing slurry composition comprising an additive represented by Formula 1, a stabilizer, an abrasive, an oxidizing agent, and an iron catalyst.
[Formula 1]

In the above formula,
R ₁ and R ₂ are each independently hydrogen (H), heavy hydrogen (D), a substituted or unsubstituted C1 to C20 alkyl group, or a carboxyl group,
At least one of R ₁ and R ₂ is a carboxyl group;
R ₃ and R ₄ are each independently hydrogen (H), heavy hydrogen (D), a hydroxy group, a carboxyl group, a substituted or unsubstituted C1 to C20 alkyl group, or a C1 to C20 alkoxy group,
At least one of R ₃ and R ₄ is a hydroxy group, a carboxyl group, a substituted or unsubstituted C1 to C20 alkyl group, or a C1 to C20 alkoxy group,
The chemical mechanical polishing slurry composition is a chemical mechanical polishing slurry composition for polishing tungsten and silicon nitride films. In paragraph 1,
The chemical mechanical polishing slurry composition in which the additive represented by Formula 1 is a material represented by Formula 2 or Formula 3 below.
[Formula 2]

[Formula 3]
According to claim 1,
The chemical mechanical polishing slurry composition of claim 1, wherein the stabilizer is an amino acid that forms a chelate bond with iron ions. According to claim 1,
Based on 100% by weight of the total amount of the chemical mechanical polishing slurry composition,
0.01 to 0.5% by weight of the additive, 0.01 to 0.5% by weight of the stabilizer, 0.1 to 5.0% by weight of the abrasive and 0.1 to 5.0% by weight of the oxidizing agent,
10 to 300 ppm of the iron catalyst,
A chemical mechanical polishing slurry composition, the remainder being deionized water. According to claim 1,
The chemical mechanical polishing slurry composition further comprises aspartic acid or a derivative thereof as an auxiliary additive. According to claim 5,
The auxiliary additive is based on 100% by weight of the total amount of the composition,
A chemical mechanical polishing slurry composition that is contained in 0.01 to 0.2% by weight. According to claim 1,
The chemical mechanical polishing slurry composition further comprises a pH adjusting agent,
A chemical mechanical polishing slurry composition wherein the pH of the composition is 2 to 3. delete According to claim 1,
The chemical mechanical polishing slurry composition is a chemical mechanical polishing slurry composition in which the ratio of the tungsten polishing rate (Å / min) and the silicon nitride film polishing rate (Å / min) is 3: 1 to 4: 1. depositing a tungsten-containing metal film on the substrate;
forming a silicon nitride film on the substrate; and
A method for polishing a substrate comprising a tungsten and silicon nitride film, comprising polishing the substrate with the chemical mechanical polishing slurry composition according to any one of claims 1 to 7 and 9.