KR102569631B1 - Chemical mechanical polishing apparatus and control method thereof - Google Patents

Abstract

The present invention relates to a chemical mechanical polishing apparatus and a control method thereof, wherein the chemical mechanical polishing apparatus is provided to be spaced apart from a polishing pad with which a substrate contacts during a chemical mechanical polishing process, and to be spaced apart from the upper surface of the polishing pad and to exist on the upper surface of the polishing pad. The temperature of the polishing pad can be uniformly controlled by including a temperature control unit for controlling the surface temperature of the polishing pad using a fluid as a medium.

Description

Chemical mechanical polishing device and its control method {CHEMICAL MECHANICAL POLISHING APPARATUS AND CONTROL METHOD THEREOF}

The present invention relates to a chemical mechanical polishing device and a control method thereof, and more particularly, to a chemical mechanical polishing device capable of uniformly adjusting the temperature of a polishing pad and a control method thereof.

As semiconductor devices are manufactured by integrating fine circuit lines at a high density, corresponding precision polishing is performed on the surface of the wafer. In order to more precisely polish the wafer, a chemical mechanical polishing process (CMP process) in which not only mechanical polishing but also chemical polishing is performed as shown in FIGS. 1 and 2 is performed.

That is, on the upper surface of the polishing table 10, the polishing pad 11 in contact with the wafer W is pressed and rotated (11d) together with the polishing table 10, and the slurry of the supply unit 30 for chemical polishing While the slurry is supplied through the supply port 32, mechanical polishing by friction is performed on the wafer W. At this time, the wafer W is rotated (20d) at a position determined by the carrier head 20, and a polishing process of accurately flattening is performed.

The slurry applied to the surface of the polishing pad 11 is evenly spread on the polishing pad 11 by the conditioner 40 in which the arm 41 rotates in the direction indicated by 41d while rotating in the direction indicated by reference numeral 40d. and the polishing pad 11 can maintain a constant polishing surface by the mechanical dressing process of the conditioner 40.

On the other hand, during the chemical mechanical polishing process, if the temperature of the polishing pad 11 is non-uniform, the polishing uniformity and the stability of the polishing rate are deteriorated. should be able to

However, conventionally, there is a problem in that polishing non-uniformity increases and stability decreases due to an increase in the surface temperature of the polishing pad 11 according to the wafer film quality, which is a material to be polished. In particular, conventionally, as the surface temperature of the polishing pad 11 is non-uniform for each section along the radial direction of the polishing pad 11, the polishing uniformity and the stability of the polishing rate are deteriorated.

In addition, since the slurry-based chemical polishing process is greatly affected by temperature, when the surface temperature of the polishing pad varies, the polished surface of the wafer becomes non-uniform due to the variation in chemical polishing amount.

In the past, a method of lowering the surface temperature of the polishing pad by a separate rinsing process has been proposed. However, conventionally, as the rinsing process is uniformly performed on the surface of the polishing pad without considering the temperature conditions of the surface section of the polishing pad, it is difficult to uniformly control the surface temperature of the polishing pad as a whole, and the polishing process must be stopped during the rinsing process. Therefore, there is a problem in that productivity is lowered.

To this end, recently, various studies have been made to constantly adjust the surface temperature of the polishing pad and improve the quality of the polishing surface of the wafer, but it is still insufficient and development thereof is required.

An object of the present invention is to provide a chemical mechanical polishing device capable of uniformly adjusting the surface temperature of a polishing pad and a control method thereof.

Particularly, an object of the present invention is to provide a chemical mechanical polishing device capable of individually adjusting the surface temperature of a polishing pad for each section along the radial direction of the polishing pad and a control method thereof.

In addition, an object of the present invention is to provide a chemical mechanical polishing apparatus and a control method thereof capable of improving stability and reliability and improving productivity.

In addition, an object of the present invention is to provide a chemical mechanical polishing apparatus and a control method capable of preventing variation in chemical polishing amount due to variation in surface temperature of a polishing pad and improving polishing quality of a substrate.

According to a preferred embodiment of the present invention for achieving the above-described objects of the present invention, a chemical mechanical polishing apparatus is provided to be spaced apart from a polishing pad with which a substrate is in contact during a chemical mechanical polishing process and an upper part of the polishing pad. The temperature of the polishing pad can be uniformly controlled by including a temperature control unit for adjusting the surface temperature of the polishing pad using the fluid present on the upper surface as a medium.

For reference, in the present invention, a substrate may be understood as an object that can be polished on a polishing pad using a carrier head, and the present invention is not limited or limited by the type and characteristics of the substrate. For example, a wafer may be used as the substrate.

Also, in the present invention, the fluid present on the upper surface of the polishing pad may include at least one of slurry (CMP slurry) and cleaning water (eg, DIW) present on the upper surface of the polishing pad. In some cases, the temperature control unit may be configured to control the surface temperature of the polishing pad using gas as a medium.

The temperature control unit may be provided in various structures capable of adjusting the surface temperature of the polishing pad by using a fluid present on the upper surface of the polishing pad as a heat transfer medium according to required conditions and design specifications. Preferably, the temperature control unit may be configured to divide the surface of the polishing pad into a plurality of surface sections and independently control the temperature of the plurality of surface sections by using a fluid present on the upper surface of the polishing pad as a heat transfer medium.

The surface of the polishing pad may be divided into a plurality of surface sections in various ways according to required conditions and design specifications. For example, the surface of the polishing pad may be divided into a plurality of ring-shaped surface sections having different diameters along the radial direction of the polishing pad.

Preferably, the temperature control unit provides a plurality of temperature control sections divided to correspond to a plurality of surface sections, and the temperature control unit may be partially provided on a partial region of the upper surface of the polishing pad. Such a structure allows a chemical mechanical polishing process using a carrier head and a modification process of the polishing pad using a conditioner to be performed on the upper surface of the polishing pad, and a surface temperature control process by the temperature control unit to be simultaneously performed.

As an example of the temperature control unit, the temperature control unit includes a section dividing member for providing a plurality of temperature control sections divided to correspond to a plurality of surface sections, and a fluid present on the surface of the polishing pad provided on each of the plurality of temperature control sections. and a heat transfer member through which heat is transferred.

The section dividing member may be provided in various structures according to required conditions and design specifications. For example, the section dividing member may include a housing member provided to cover a portion of the upper surface of the polishing pad, and a partition member dividing the inner space of the housing member into a plurality of temperature control sections corresponding to a plurality of surface sections, , A plurality of surface sections can be defined by the partition wall member.

The heat transfer member may be provided in various structures capable of contacting a fluid present on the surface of the polishing pad and transferring heat. For example, the heat transfer member may be selectively heated or cooled according to the temperature of a plurality of surface sections. For example, when the temperature of the specific surface section is high, the heat transfer member is cooled, so that the temperature of the specific surface section can be lowered using the fluid present in the specific surface section as a medium. Conversely, when the temperature of the other specific surface section is low, the heat transfer member is heated, so that the temperature of the other specific surface section can be increased using the fluid present in the other specific surface section as a medium.

The type and characteristics of the heat transfer member may be variously changed according to required conditions and design specifications. For example, as the heat transfer member, a conventional thermoelectric element using heat absorption or heat generation by a Peltier effect may be used.

In addition, a heat dissipation member may be provided above the heat transfer member to enable heat transfer with the heat transfer member. The heat dissipation member may be provided in various structures capable of transferring heat with the heat transfer member, and the present invention is not limited or limited by the type and characteristics of the heat dissipation member. For example, a conventional heat sink capable of absorbing heat from a heat transfer member and dissipating it to the outside may be used as a heat dissipation member.

In addition, in order to further enhance the heat transfer effect (eg, heat dissipation characteristics) by the heat dissipation member, a heat transfer fluid supply unit for supplying a heat transfer fluid capable of transferring heat to the heat dissipation member may be provided above the heat dissipation member. Here, the heat transfer fluid may be understood as a concept including both liquid fluid and gaseous fluid.

In addition, a spray nozzle may be connected to the outlet of the heat transfer fluid supply unit, and the spray nozzle may be provided so that the spray direction is directed toward the surface of the polishing pad. Preferably, a spray nozzle may be provided to spray the heat transfer fluid in a direction from the inside to the outside of the polishing pad, and foreign substances remaining on the surface of the polishing pad are blown out of the polishing pad by the heat transfer fluid sprayed along the spray nozzle. may be discharged.

In addition, according to the present invention, a slurry (CMP slurry) for chemical polishing of a substrate may be supplied on the temperature controller. Of course, in some cases, it is also possible to configure the slurry to be supplied to the upper surface of the polishing pad through a slurry supply unit provided separately from the temperature control unit. For example, a slurry supply hole may be formed on the temperature controller, and slurry for a chemical polishing process of the substrate may be supplied to the upper surface of the polishing pad through the slurry supply hole. Preferably, the slurry supply hole may be disposed behind the above-described spray nozzle along the rotational direction of the polishing pad. More preferably, a slurry application slot communicating with a slurry supply hole may be formed on the bottom surface of the temperature controller facing the polishing pad, and the slurry supplied to the slurry supply hole may be applied to the upper surface of the polishing pad along the slurry application slot. there is.

Meanwhile, the chemical mechanical polishing apparatus according to the present invention may include a temperature measurement unit for measuring the temperature of the polishing pad and a control unit for controlling the temperature control unit according to the result measured by the temperature measurement unit.

The temperature measuring unit may be provided to measure the temperature of the polishing pad in various ways according to required conditions and design specifications. For example, the temperature measuring unit includes a first temperature measuring unit for measuring the surface temperature of the polishing pad at the entrance of the temperature controller along the rotational direction of the polishing pad, and a surface temperature of the polishing pad at the outlet of the temperature controller along the rotational direction of the polishing pad. It may include a second temperature measurement unit for measuring , and the controller may control the temperature controller according to the results measured by the first temperature measurement unit and the second temperature measurement unit.

Here, that the control unit controls the temperature control unit may be understood as a concept that includes both adjusting power applied to the heat transfer member (thermoelectric element) or adjusting the supply amount of the heat transfer fluid supplied along the heat transfer fluid supply unit. .

The first temperature measuring unit and the second temperature measuring unit may be provided in various structures according to required conditions and design specifications. For example, the first temperature measurement unit may include a plurality of first temperature sensors disposed at the entrance of the temperature control unit along the rotational direction of the polishing pad to correspond to the plurality of surface sections, and the second temperature measurement unit may include a plurality of surface sections. It may include a plurality of second temperature sensors respectively disposed at outlets of the temperature control unit along the rotational direction of the polishing pad corresponding to the section.

According to another preferred embodiment of the present invention, the surface temperature of the polishing pad is controlled using a polishing pad, which is in contact with the substrate during the chemical mechanical polishing process, and a fluid provided on the top of the polishing pad and present on the upper surface of the polishing pad as a medium. A control method of a chemical mechanical polishing apparatus including a temperature control unit for measuring a surface temperature of a polishing pad, a temperature measurement step of measuring the surface temperature of a polishing pad, and adjusting the temperature of a fluid according to the result measured in the temperature measurement step to produce a polishing pad using the fluid as a medium. It includes a temperature control step of controlling the temperature.

For reference, the surface of the polishing pad may be divided into a plurality of surface sections in various ways according to required conditions and design specifications. For example, the surface of the polishing pad may be divided into a plurality of ring-shaped surface sections having different diameters along the radial direction of the polishing pad.

In the temperature measuring step, the temperature of the polishing pad may be measured in various ways according to required conditions and design specifications. For example, in the temperature measurement step, the temperatures of a plurality of surface sections may be individually measured. Preferably, the temperature measuring step includes an inlet temperature measuring step of measuring the surface temperature of a plurality of surface sections at the inlet of the temperature controller along the rotational direction of the polishing pad, and a plurality of temperature controllers at the outlet of the temperature controller along the rotational direction of the polishing pad. An outlet temperature measuring step of measuring the surface temperature of the surface section may be included.

In the temperature control step, the temperature of the plurality of surface sections may be individually adjusted according to the temperatures of the plurality of surface sections individually measured in the temperature measurement step. Preferably, in the temperature control step, the temperatures of the plurality of surface sections may be individually adjusted so that the temperature difference measured in the inlet temperature measuring step and the outlet temperature measuring step is within a predetermined range.

In the temperature control step, the surface temperature of the polishing pad can be adjusted using the fluid present on the upper surface of the polishing pad as a medium by controlling the temperature controller.

For reference, in the present invention, the fluid present on the upper surface of the polishing pad may include at least one of a slurry (CMP slurry) and cleaning water (eg, DIW) present on the upper surface of the polishing pad. In some cases, the temperature control unit may be configured to control the surface temperature of the polishing pad using gas as a medium.

The temperature control unit may be provided in various structures capable of adjusting the surface temperature of the polishing pad by using a fluid present on the upper surface of the polishing pad as a heat transfer medium according to required conditions and design specifications. For example, the temperature control unit includes a section dividing member providing a plurality of temperature control sections divided to correspond to a plurality of surface sections, each provided on the plurality of temperature control sections, and heat transfer between the fluid present on the surface of the polishing pad. It may include a heat transfer member made of. In addition, the type and characteristics of the heat transfer member may be variously changed according to required conditions and design specifications. For example, as the heat transfer member, a conventional thermoelectric element using heat absorption or heat generation by a Peltier effect may be used.

For reference, controlling the temperature control unit in the temperature control step is understood as a concept that includes both adjusting the power applied to the heat transfer member (thermoelectric element) and adjusting the supply amount of the heat transfer fluid supplied along the heat transfer fluid supply unit. It can be.

According to another preferred embodiment of the present invention, a chemical mechanical polishing apparatus includes a polishing pad with which a substrate comes into contact during a chemical mechanical polishing process, provided on the upper part of the polishing pad, and dividing the surface of the polishing pad into a plurality of surface sections, and It includes a temperature control unit that independently controls the temperature of the dog's surface section.

The surface of the polishing pad may be divided into a plurality of surface sections by the temperature controller in various ways according to required conditions and design specifications. For example, the surface of the polishing pad may be divided into a plurality of ring-shaped surface sections having different diameters along the radial direction of the polishing pad. Alternatively, the temperature controller may divide the surface of the polishing pad into a plurality of surface sections having a radial structure based on the rotation center of the polishing pad or into a plurality of surface sections having other structures.

The temperature control unit may be provided in various structures capable of independently controlling the temperature of a plurality of surface sections according to required conditions and design specifications. For example, the temperature control unit may include a contact member contacting the surface of the polishing pad to enable heat transfer with the polishing pad, and a heat transfer member through which heat is transferred to the contact member, and the contact member and the heat transfer member are individually disposed in a plurality of surface sections. can be provided as

The contact member contacts the polishing pad and may be formed of various structures and materials capable of transferring heat. Preferably, the contact member may be formed of a material capable of maximizing heat transfer efficiency while minimizing damage to the polishing pad. In addition, the contact member may be in surface contact or line contact with the surface of the polishing pad, but in some cases, it is also possible to configure the contact member to indirectly contact the surface of the polishing pad by using an intermediate medium having excellent thermal conductivity.

The heat transfer member is provided on the upper surface of the contact member to conduct heat transfer with the contact member, and is configured to control the temperature of the contact member through which heat is transferred to the heat transfer member by adjusting the temperature of the heat transfer member. For example, the heat transfer member may be selectively heated or cooled according to the temperature of a plurality of surface sections.

The type and characteristics of the heat transfer member may be variously changed according to required conditions and design specifications. For example, as the heat transfer member, a conventional thermoelectric element using heat absorption or heat generation by a Peltier effect may be used.

In addition, a cooling unit for cooling the heat transfer member may be provided above the heat transfer member. The cooling unit may be provided in various structures capable of transferring heat to the heat transfer member, and the present invention is not limited or limited by the structure and characteristics of the cooling unit. For example, the cooling unit may include a cooling plate connected to an upper portion of the heat transfer member to enable heat transfer, and a cooling fluid flow path through which cooling fluid flows along the inside of the cooling plate.

The contact member and the heat transfer member individually provided to the plurality of surface sections may be integrally connected by a connection member provided on the upper part of the polishing pad.

The connection member may be provided in various structures capable of integrally connecting the contact member and the heat transfer member adjacent to each other. Preferably, the connection member may be formed of a flexible material, and the contact member may be configured to contact the polishing pad by self-load while connected to the connection member. Here, in the state in which the contact member is in contact with the polishing pad by its own weight, the load of the contact member and the connection member does not act on the surface of the polishing pad at all, or only a very small part of the total load of the contact member and the connection member It can be understood as including all states acting on the surface of the polishing pad. More preferably, flow guide grooves may be formed in the connecting member so that the fluidity of the connecting member along the vertical direction can be effectively ensured for each of the plurality of surface section areas.

In addition, fluid flow grooves may be formed on the bottom surface of the contact member to allow fluid existing on the upper surface of the polishing pad to flow. Preferably, the fluid flow groove may be provided so that the fluid flows in a direction from the inside to the outside of the polishing pad.

Here, the fluid present on the upper surface of the polishing pad may include at least one of slurry (CMP slurry) and cleaning water (eg, DIW) present on the upper surface of the polishing pad. In some cases, the fluid present on the upper surface of the polishing pad may include a gas forcibly flowing on the upper surface of the polishing pad.

In addition, the chemical mechanical polishing apparatus according to another embodiment of the present invention may include a temperature measurement unit for measuring the temperature of the polishing pad, and a control unit for controlling the temperature control unit according to the result measured by the temperature measurement unit.

The temperature measuring unit may be provided to measure the temperature of the polishing pad in various ways according to required conditions and design specifications. For example, the temperature measuring unit may include a plurality of temperature sensors arranged for each of the plurality of surface sections, and the controller may individually control the temperatures of the plurality of surface sections according to the results measured by the plurality of temperature sensors.

Here, that the control unit controls the temperature control unit may be understood as a concept including both adjusting the power applied to the heat transfer member (thermoelectric element) or adjusting the cooling performance (cooling fluid supply amount) of the cooling unit.

According to another preferred embodiment of the present invention, a polishing pad having a plurality of surface sections divided along a radial direction and contacting a substrate during a chemical mechanical polishing process, provided on top of the polishing pad, and having a plurality of surfaces of the polishing pad. A control method of a chemical mechanical polishing apparatus including a temperature control unit dividing into two surface sections and independently controlling the temperature of a plurality of surface sections includes a temperature measurement step of measuring the temperature of a plurality of surface sections, and measurement in the temperature measurement step. It includes a temperature control step of adjusting the temperature of a plurality of surface sections according to the results obtained.

The surface of the polishing pad may be divided into a plurality of surface sections in various ways according to required conditions and design specifications. For example, the surface of the polishing pad may be divided into a plurality of ring-shaped surface sections having different diameters along the radial direction of the polishing pad.

In the temperature measurement step, the temperature of each surface section can be measured in various ways according to the required conditions and design specifications. For example, the temperature of each surface section may be measured by a temperature measuring unit including a plurality of temperature sensors disposed for each of a plurality of surface section areas.

In the temperature control step, the surface temperature of the polishing pad may be adjusted by controlling the temperature control unit provided on the top of the polishing pad. The temperature controller may be provided in various structures capable of adjusting the surface temperature of the polishing pad according to required conditions and design specifications. For example, the temperature control unit includes a contact member contacting the polishing pad and the surface of the polishing pad to enable heat transfer, a thermoelectric element through which heat is transferred to the contact member, and a cooling unit for cooling the thermoelectric element, respectively, in a plurality of surface sections. Can be provided individually.

The type and characteristics of the heat transfer member may be variously changed according to required conditions and design specifications. For example, as the heat transfer member, a conventional thermoelectric element using heat absorption or heat generation by a Peltier effect may be used.

In addition, the contact member and the heat transfer member individually provided to the plurality of surface sections may be integrally connected by a connection member provided on the upper part of the polishing pad. Preferably, the connection member may be formed of a flexible material, and the contact member may be configured to contact the polishing pad by self-load while connected to the connection member.

For reference, controlling the temperature control unit in the temperature control step can be understood as a concept that includes both adjusting the power applied to the heat transfer member (thermoelectric element) or controlling the cooling performance (cooling fluid supply amount) of the cooling unit. there is.

In addition, the control method of the chemical mechanical polishing apparatus according to another embodiment of the present invention may include a fluid flow step of flowing a fluid present on the upper surface of the polishing pad from the inside to the outside of the polishing pad. To this end, a fluid flow groove may be formed on the bottom surface of the contact member for the fluid present on the upper surface of the polishing pad to flow, and the fluid present on the upper surface of the polishing pad, that is, the fluid used in the chemical mechanical polishing process, and Foreign substances included in the fluid may be discharged to the outside of the polishing pad after flowing in a direction from the inside to the outside of the polishing pad along the fluid flow groove.

Here, the fluid present on the upper surface of the polishing pad may include at least one of slurry (CMP slurry) and cleaning water (eg, DIW) present on the upper surface of the polishing pad. In some cases, the fluid present on the upper surface of the polishing pad may include a gas forcibly flowing on the upper surface of the polishing pad.

As described above, according to the present invention, the surface temperature of the polishing pad can be uniformly controlled.

In particular, according to the present invention, the surface temperature profile of the polishing pad can be uniformly adjusted as a whole by individually adjusting the surface temperature of the polishing pad for each section along the radial direction of the polishing pad, and polishing uniformity and polishing characteristics can be improved.

In addition, according to the present invention, since the temperature of the polishing pad can be adjusted through the medium of the fluid present on the upper surface of the polishing pad, it is possible to maximize heat transfer characteristics by increasing the contact area, and to more accurately control the temperature of the polishing pad. It is possible, and the structure and process can be simplified.

In addition, according to the present invention, it is possible to prevent stability and reliability deterioration due to the surface temperature variation of the polishing pad, and productivity can be improved because the temperature control process of the polishing pad can be performed simultaneously while the polishing process is performed.

In addition, according to the present invention, it is possible to prevent the variation of chemical polishing amount according to the surface temperature variation of the polishing pad and improve the polishing quality of the substrate.

1 and 2 are views for explaining a conventional chemical mechanical polishing apparatus;
3 is a view for explaining a chemical mechanical polishing apparatus according to the present invention;
4 to 6 are chemical mechanical polishing apparatus according to the present invention, views for explaining the temperature control unit;
7 is a chemical mechanical polishing apparatus according to the present invention, a view for explaining a spray nozzle;
8 is a chemical mechanical polishing apparatus according to the present invention, a view for explaining a slurry supply hole and a slurry application slot;
9 is a view for explaining a chemical mechanical polishing apparatus according to another embodiment of the present invention;
10 to 12 are chemical mechanical polishing apparatus according to another embodiment of the present invention, views for explaining the temperature control unit;
13 is a chemical mechanical polishing apparatus according to another embodiment of the present invention, a view for explaining a fluid flow groove;
14 is a block diagram for explaining a control method of a chemical mechanical polishing apparatus according to the present invention;
15 is a block diagram for explaining a control method of a chemical mechanical polishing apparatus according to another embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or limited by the embodiments. For reference, in the present description, the same numbers refer to substantially the same elements, and descriptions may be made by citing contents described in other drawings under these rules, and contents determined to be obvious to those skilled in the art or repeated contents may be omitted.

3 is a view for explaining the chemical mechanical polishing apparatus according to the present invention, and FIGS. 4 to 6 are views for explaining the temperature controller in the chemical mechanical polishing apparatus according to the present invention. 7 is a chemical mechanical polishing apparatus according to the present invention, which is a view for explaining a spray nozzle, and FIG. 8 is a chemical mechanical polishing apparatus according to the present invention, which is a view for explaining a slurry supply hole and a slurry application slot. .

3 to 8, the chemical mechanical polishing apparatus according to the present invention includes a polishing pad 111 and a temperature controller 200.

The polishing pad 111 may be formed to have a circular disk shape, and is provided on the upper surface of the rotating polishing table 110 .

A chemical mechanical polishing process may be performed by pressing the substrate onto the upper surface of the polishing pad 111 by the carrier head 120 in a state in which the slurry is supplied to the upper surface of the polishing pad 111, and the polishing pad 111 and After the chemical mechanical polishing process using the slurry is finished, the substrate 10 may be transferred to a cleaning device.

For reference, in the present invention, the substrate 10 may be understood as an object that can be polished on the polishing pad 111, and the present invention is not limited or limited by the type and characteristics of the substrate 10 no. For example, a wafer may be used as the substrate 10 .

The carrier head 120 may be provided in various structures according to required conditions and design specifications. For example, the carrier head 120 includes a body portion (not shown) rotatably provided, a base portion (not shown) provided rotatably together with the body portion, and an elastic membrane (not shown) provided on the bottom of the base portion. City) may be provided, including.

The elastic membrane has an opening formed in a central portion, an inner end adjacent to the central portion of the elastic membrane may be fixed to the base portion, and an outer end of the elastic membrane may be fixed to the base portion by a retainer ring coupled to an edge portion of the base portion. can

The elastic membrane may be provided in various structures according to required conditions and design specifications. For example, a plurality of flips (eg, ring-shaped flips) may be formed on the elastic membrane, and a plurality of pressure partitioned between the base portion and the elastic membrane along the radial direction of the base portion by the plurality of flips. A chamber may be provided.

A pressure sensor for measuring a pressure may be provided in each pressure chamber between the base part and the elastic membrane. The pressure of each pressure chamber may be individually controlled by the control of the pressure chamber controller 800, and the pressure at which the substrate 10 is pressed may be individually adjusted by adjusting the pressure of each pressure chamber.

In addition, a central pressure chamber (not shown) may be formed in the center of the carrier head 120 through the opening of the elastic membrane. The central pressure chamber not only directly communicates with the substrate 10 to pressurize the wafer during the polishing process, but also grips the substrate 10 by adhering the substrate 10 to the elastic membrane of the carrier head 120 by applying a suction pressure thereto. It may also serve to move to a third location (eg, cleaning device) in one state.

In addition, a conditioner for modifying the surface of the polishing pad 111 is provided on the other side of the upper surface of the polishing pad 111 .

The conditioner is provided to rotate about the center of rotation of the arm 141, and the polishing pad 111 can maintain a constant polishing surface by the mechanical dressing process of the conditioner 40.

The temperature control unit 200 is provided to be spaced apart from the top of the polishing pad 111, and controls the surface temperature of the polishing pad 111 using the fluid 112 present on the upper surface of the polishing pad 111 as a medium. It consists of

For reference, in the present invention, the fluid 112 present on the upper surface of the polishing pad 111 refers to the slurry (CMP slurry) and washing water (eg, DIW) present on the upper surface of the polishing pad 111 At least one may be included. For reference, in the embodiment of the present invention, an example in which the temperature controller 200 is configured to control the surface temperature of the polishing pad 111 using a liquid fluid present on the upper surface of the polishing pad 111 as a medium will be described. However, in some cases, it is also possible that the temperature control unit is configured to control the surface temperature of the polishing pad using gas as a medium.

The temperature control unit 200 has various structures capable of adjusting the surface temperature of the polishing pad 111 by using the fluid 112 present on the upper surface of the polishing pad 111 as a heat transfer medium according to required conditions and design specifications. can be provided as Preferably, the temperature control unit 200 divides the surface of the polishing pad 111 into a plurality of surface sections, and uses the fluid 112 present on the upper surface of the polishing pad 111 as a heat transfer medium to create a plurality of surfaces. It can be configured to independently regulate the temperature of the sections.

As described above, during the polishing process, there is a problem in that the temperature of a specific region of the surface of the polishing pad 111 locally rises due to reasons such as the type of film quality of the substrate and the change in the pressing force by the carrier head 120. The temperature controller 200 divides the surface of the polishing pad 111 into a plurality of surface sections and individually controls the surface temperature of each surface section, so that the surface temperature of the polishing pad 111 can be maintained uniformly as a whole. make it possible

The surface of the polishing pad 111 may be divided into a plurality of surface sections in various ways according to required conditions and design specifications. For example, the surface of the polishing pad 111 may be divided into a plurality of ring-shaped surface sections having different diameters along the radial direction of the polishing pad 111 .

As an example of the temperature control unit 200 capable of controlling the temperature of the polishing pad 111 using the fluid 112 present on the upper surface of the polishing pad 111 as a medium, the temperature control unit 200 is divided into sections. It may be configured to include the member 300 and the heat transfer member 400.

The section dividing member 300 provides a plurality of temperature control sections divided to correspond to a plurality of surface sections. Here, the plurality of temperature control sections can be understood as independently partitioned (partitioned) spaces corresponding to a plurality of surface sections, and in a specific temperature control section, only the temperature of the corresponding specific surface section can be adjusted. For example, when the surface of the polishing pad 111 is divided into six surface sections Z1 to Z6, the section dividing member 300 provides six temperature control sections C1 corresponding to the six surface sections Z1 to Z6. ~ C6) can be provided, for example, the surface temperature of the Z3 surface section can be controlled in the C3 temperature control section, and the surface temperature of the Z4 surface section can be controlled in the C4 temperature control section.

For reference, the temperature control unit 200 provides a plurality of temperature control sections C1 to C6 divided to correspond to a plurality of surface sections, and the temperature control section 200 is part of the upper surface of the polishing pad 111. may be partially provided in the area. For example, the temperature controller 200 may be provided in an approximate sector shape, and each temperature control section C1 to C6 may be provided in an arc shape having different radii. In this structure, a chemical mechanical polishing process using a carrier head and a reforming process of the polishing pad 111 using a conditioner are performed on the upper surface of the polishing pad 111, and a surface temperature control process by the temperature control unit 200 is performed. allow this to be done simultaneously.

The section dividing member 300 may be provided in various structures according to required conditions and design specifications. For example, the section dividing member 300 includes a housing member 310 provided to cover a portion of the upper surface of the polishing pad 111, and a plurality of divided internal spaces of the housing member 310 to correspond to a plurality of surface sections. It may include a partition wall member 320 dividing into two temperature control sections C1 to C6, and the plurality of surface sections may be defined by the partition wall member 320. For example, the housing member 310 may be formed in an approximate fan shape, and the partition member 320 may be provided in an arc shape to divide the internal space of the housing member 310 into a plurality of temperature control sections. In some cases, it is also possible that a plurality of temperature control sections are configured by separate housing members.

The heat transfer member 400 is provided on each of the plurality of temperature control sections C1 to C6, and can contact the fluid 112 present on the surface of the polishing pad 111 to transfer heat, and the fluid can be used as a medium. It is configured to adjust the temperature of the polishing pad 111 .

The heat transfer member 400 may be provided in various structures capable of contacting the fluid 112 present on the surface of the polishing pad 111 and transferring heat. The heat transfer member 400 may be selectively heated or cooled according to the temperature of a plurality of surface sections. For example, when the temperature of the specific surface section is high, the heat transfer member is cooled, so that the temperature of the specific surface section can be lowered using the fluid present in the specific surface section as a medium. Conversely, when the temperature of the other specific surface section is low, the heat transfer member is heated, so that the temperature of the other specific surface section can be increased using the fluid present in the other specific surface section as a medium.

The type and characteristics of the heat transfer member 400 may be variously changed according to required conditions and design specifications. Referring to FIG. 6 , a conventional thermoelectric element using heat absorption or heat generation by a Peltier effect may be used as the heat transfer member 400 . Preferably, the heat transfer member 400 may be provided in a size and shape corresponding to each corresponding temperature control section C1 to C6 so that heat transfer by the heat transfer member 400 can be efficiently performed. In some cases, it is also possible that the heat transfer member is provided in a smaller size and a different shape than the corresponding temperature control section.

In addition, referring to FIG. 6 , a heat dissipation member 500 may be provided above the heat transfer member 400 to enable heat transfer with the heat transfer member 400 .

For example, the heat dissipation member 500 may be provided to dissipate heat from the heat transfer member 400 to the outside. The heat dissipation member 500 may be provided in various structures capable of transferring heat to the heat transfer member 400, and the present invention is not limited or limited by the type and characteristics of the heat dissipation member 500. Hereinafter, an example in which a conventional heat sink capable of absorbing heat from the heat transfer member 400 and dissipating it to the outside is used as the heat dissipation member 500 will be described. The heat dissipation member 500 may also be provided in a size and shape corresponding to the heat transfer member 400 to maximize heat transfer efficiency.

Also, referring to FIGS. 6 and 7 , a heat transfer fluid supply unit 600 supplying a heat transfer fluid capable of transferring heat with the heat dissipation member 500 may be provided above the heat dissipation member 500 .

The heat transfer fluid supply unit 600 may be provided to further increase the heat transfer effect (eg, heat dissipation characteristics) by the heat dissipation member 500 . For example, the heat transfer fluid supply unit 600 may be provided to quickly dissipate heat from the heat dissipation member 500 . Here, the heat transfer fluid may be understood as a concept including both liquid fluid and gaseous fluid. For example, washing water (DIW) or nitrogen (N ₂ ) gas may be used as the heat transfer fluid.

The heat transfer fluid supply unit 600 may be provided in the form of a closed flow path capable of accommodating the heat dissipation member 500 therein, but may also be provided in the form of an open flow path in some cases.

In addition, a spray nozzle 610 may be connected to the outlet of the heat transfer fluid supply unit 600, and the spray nozzle 610 may be provided so that the spray direction is directed toward the surface of the polishing pad 111. Accordingly, the heat transfer fluid supplied along the heat transfer fluid supply unit 600 may be sprayed onto the surface of the polishing pad 111 .

Such a structure makes it possible to clean foreign substances remaining on the surface of the polishing pad 111 by reusing the heat transfer fluid used to improve the heat dissipation characteristics of the heat dissipation member 500 . Preferably, the spray nozzle 610 may be provided to spray the heat transfer fluid in a direction from the inside to the outside of the polishing pad 111, and foreign substances remaining on the surface of the polishing pad 111 may be removed from the spray nozzle 610. The heat transfer fluid sprayed along may be discharged to the outside of the polishing pad 111 .

In addition, according to the present invention, a slurry (CMP slurry) for chemical polishing of a substrate may be supplied on the temperature controller 200 described above. Of course, in some cases, it is also possible to configure the slurry to be supplied to the upper surface of the polishing pad through a slurry supply unit provided separately from the temperature control unit.

For example, a slurry supply hole 330 may be formed on the temperature controller 200, and the slurry for chemical polishing of the substrate is supplied to the upper surface of the polishing pad 111 through the slurry supply hole 330. can Preferably, the slurry supply hole 330 may be disposed behind the spray nozzle 610 described above along the rotational direction of the polishing pad 111 .

In this structure, after foreign matter remaining on the surface of the polishing pad 111 is discharged to the outside of the polishing pad 111 by the heat transfer fluid sprayed through the injection nozzle 610, the surface of the polishing pad 111 is cleaned. to allow a new slurry to be supplied.

The slurry supply hole 330 may be provided in various structures according to required conditions and design specifications. For example, the slurry supply hole 330 may be formed on the outlet side of the aforementioned housing member 310 along the rotational direction of the polishing pad 111 . In some cases, it is also possible to provide a structure in which the slurry supply hole is connected to the outer surface of the housing member.

In addition, referring to FIG. 8, a slurry application slot 340 communicating with a slurry supply hole 330 may be formed on the bottom surface of the temperature controller 200 facing the polishing pad 111, and the slurry supply The slurry supplied to the hole 330 may be applied to the upper surface of the polishing pad 111 along the slurry application slot 340 .

Preferably, the slurry application slot 340 may be formed in an arc shape along the outlet end of the temperature control unit 200 (housing member), and the slurry supplied to the slurry supply hole 330 forms an arc-shaped application slot. It can be spread widely. Moreover, since the slurry supplied to the slurry supply hole 330 can be widely applied along the slurry application slot 340 after being filled in the slurry application slot 340, a uniform amount is applied to the surface of the polishing pad 111 as a whole. The slurry may be applied thinly.

Meanwhile, the chemical mechanical polishing apparatus according to the present invention includes a temperature measurement unit for measuring the temperature of the polishing pad 111 and a control unit 800 for controlling the temperature control unit 200 according to the result measured by the temperature measurement unit. can include

The temperature measuring unit may be provided to measure the temperature of the polishing pad 111 in various ways according to required conditions and design specifications. As an example, referring to FIG. 5 , the temperature measurement unit 710 measures the surface temperature of the polishing pad 111 at the entrance of the temperature control unit 200 along the rotational direction of the polishing pad 111. , and a second temperature measuring unit 720 for measuring the surface temperature of the polishing pad 111 at an outlet of the temperature controller 200 along the rotational direction of the polishing pad 111, the control unit ( 800) may control the temperature control unit 200 according to the results measured by the first temperature measurement unit 710 and the second temperature measurement unit 720.

That is, before performing the temperature control process by the temperature control unit, the temperature of the polishing pad 111 is first measured at the inlet of the temperature control unit 200 using the first temperature measuring unit 710, and the temperature control unit After the temperature control process is completed, the temperature of the polishing pad 111 is measured at the outlet of the temperature control unit 200 again using the second temperature measuring unit 720, and then the first temperature measuring unit 710 and By controlling the temperature control unit 200 according to the result measured by the second temperature measuring unit 720, it is possible to more accurately control the temperature of the polishing pad 111. Preferably, the control unit 800 determines that the difference between the temperature measured by the first temperature measurement unit 710 and the temperature measured by the second temperature measurement unit 720 is within a predetermined range (eg, 1°C to 5°C). It is possible to control the temperature controller 200 so that

Here, the control unit 800 controls the temperature control unit 200 means that the power applied to the heat transfer member 400 (eg, a thermoelectric element) is adjusted or supplied along the heat transfer fluid supply unit 600. It can be understood as a concept that includes all of controlling the supply amount of the heat transfer fluid.

The first temperature measurement unit 710 and the second temperature measurement unit 720 may be provided in various structures according to required conditions and design specifications. For example, the first temperature measuring unit 710 includes a plurality of first temperature sensors 712 disposed at the inlet of the temperature controller 200 along the rotational direction of the polishing pad 111 corresponding to the plurality of surface sections. ), and the second temperature measuring unit 720 may include a plurality of second temperature measuring units 720 respectively disposed at the outlet of the temperature adjusting unit 200 along the rotational direction of the polishing pad 111 corresponding to the plurality of surface sections. A temperature sensor 722 may be included.

Various temperature sensors may be used as the first temperature sensor 712 and the second temperature sensor 722 according to required types and design specifications. For example, a conventional infrared (IR) temperature sensor may be used as the first temperature sensor 712 and the second temperature sensor 722, and the first temperature sensor 712 and the second temperature sensor 722 may be used as described above. It may be mounted in a sensor mounting hole (not shown) formed in one housing member 310 . In some cases, it is possible to use other non-contact sensors as the first temperature sensor and the second temperature sensor. Alternatively, it is also possible to mount a contact temperature sensor on the upper surface of the polishing table on which the polishing pad is seated and measure the temperature of the polishing pad using the contact temperature sensor.

On the other hand, Figure 14 is a block diagram for explaining the control method of the chemical mechanical polishing apparatus according to the present invention. In addition, the same or equivalent reference numerals are given to the same or equivalent parts as those of the above-described configuration, and a detailed description thereof will be omitted.

Referring to FIG. 14, a polishing pad 111 in contact with a substrate during a chemical mechanical polishing process, and a fluid provided on the top of the polishing pad 111 spaced apart and existing on the upper surface of the polishing pad 111 as a medium are used for polishing. A control method of a chemical mechanical polishing apparatus including a temperature controller 200 for adjusting the surface temperature of the pad 111 includes a temperature measuring step (S10) of measuring the surface temperature of the polishing pad 111, the temperature A temperature control step (S20) of adjusting the temperature of the polishing pad 111 through the fluid by adjusting the temperature of the fluid according to the result measured in the measuring step (S20) is included.

Step 1-1:

First, the surface temperature of the polishing pad 111 is measured (S10).

For reference, the surface of the polishing pad 111 may be divided into a plurality of surface sections in various ways according to required conditions and design specifications. For example, the surface of the polishing pad 111 may be divided into a plurality of ring-shaped surface sections having different diameters along the radial direction of the polishing pad 111 .

In the temperature measuring step (S10), the temperature of the polishing pad 111 may be measured in various ways according to required conditions and design specifications. For example, in the temperature measuring step (S10), the temperatures of the plurality of surface sections may be individually measured.

Preferably, the temperature measuring step (S10) includes an inlet temperature measuring step of measuring the surface temperature of a plurality of surface sections at the inlet of the temperature controller 200 along the rotational direction of the polishing pad 111, and the polishing An outlet temperature measuring step of measuring surface temperatures of a plurality of surface sections at the outlet of the temperature controller 200 along the rotational direction of the pad 111 may be included.

For reference, the inlet temperature is determined by the first temperature sensor 712 disposed at the inlet of the temperature controller 200 along the rotational direction of the polishing pad 111 corresponding to the plurality of surface sections. It can be measured by the temperature measurement unit 710, and the outlet temperature corresponds to the plurality of second surface sections disposed at the outlet of the temperature control unit 200 along the rotational direction of the polishing pad 111. It can be measured by the second temperature measuring unit 720 including the temperature sensor 722 .

Various temperature sensors may be used as the first temperature sensor 712 and the second temperature sensor 722 according to required types and design specifications. For example, a conventional infrared (IR) temperature sensor may be used as the first temperature sensor 712 and the second temperature sensor 722, and the first temperature sensor 712 and the second temperature sensor 722 may be used as described above. It may be mounted in a sensor mounting hole (not shown) formed in one housing member 310 . In some cases, it is also possible to mount a contact temperature sensor on the upper surface of the polishing plate on which the polishing pad is seated and measure the temperature of the polishing pad using the contact temperature sensor.

Steps 1-2:

Next, the temperature of the polishing pad 111 is controlled through the fluid by adjusting the temperature of the fluid according to the result measured in the temperature measurement step (S20).

Preferably, in the temperature control step (S20), the temperature of the plurality of surface sections may be individually adjusted according to the temperatures of the plurality of surface sections individually measured in the temperature measurement step (S10). More preferably, in the temperature control step, the temperature of the plurality of surface sections can be individually adjusted so that the temperature difference measured in the inlet temperature measurement step and the outlet temperature measurement step is within a predetermined range (eg, 1 ° C to 5 ° C) there is.

In the temperature control step (S20), temperature control of the polishing pad 111 may be performed in various ways according to required conditions and design specifications. For example, in the temperature control step (S20), the temperature control unit 200 provided to be spaced apart from the top of the polishing pad 111 is controlled to use the fluid present on the upper surface of the polishing pad 111 as a medium. ) can control the surface temperature.

For reference, in the present invention, the fluid present on the upper surface of the polishing pad 111 refers to at least one of a slurry (CMP slurry) and washing water (eg, DIW) present on the upper surface of the polishing pad 111 can include In some cases, the temperature control unit may be configured to control the surface temperature of the polishing pad using gas as a medium.

The temperature control unit 200 may be provided in various structures capable of adjusting the surface temperature of the polishing pad 111 by using the fluid present on the upper surface of the polishing pad 111 as a heat transfer medium according to required conditions and design specifications. can

For example, the temperature controller 200 includes a section dividing member 300 providing a plurality of temperature control sections C1 to C6 divided to correspond to a plurality of surface sections, and a plurality of temperature control sections C1 to C6. C6) may include a heat transfer member 400 that is provided on each surface and transfers heat to a fluid present on the surface of the polishing pad 111.

The section dividing member 300 provides a plurality of temperature control sections C1 to C6 divided to correspond to a plurality of surface sections. Here, the plurality of temperature control sections (C1 to C6) can be understood as independently partitioned (partitioned) spaces corresponding to a plurality of surface sections, and in a specific temperature control section, the temperature of the corresponding specific surface section can only be adjusted. For example, the temperature control section 200 may be provided in a sector shape, and each of the temperature control sections C1 to C6 provided by the section dividing member 300 is an arc having a different radius. (arc) form.

The heat transfer member 400 may be provided in various structures capable of contacting a fluid present on the surface of the polishing pad 111 and transferring heat. The heat transfer member 400 may be selectively heated or cooled according to the temperature of a plurality of surface sections. For example, when the temperature of the specific surface section is high, the heat transfer member 400 is cooled, so that the temperature of the specific surface section can be lowered using the fluid present in the specific surface section as a medium. Conversely, when the temperature of the other specific surface section is low, the heat transfer member 400 is heated, so that the temperature of the other specific surface section can be increased using the fluid present in the other specific surface section as a medium.

The type and characteristics of the heat transfer member 400 may be variously changed according to required conditions and design specifications. For example, as the heat transfer member 400, a conventional thermoelectric element using heat absorption or heat generation by a Peltier effect may be used.

In addition, a heat dissipation member 500 may be provided on top of the heat transfer member 400 to enable heat transfer with the heat transfer member 400, and a heat transfer fluid capable of transferring heat to the heat dissipation member 500 on the top of the heat dissipation member 500. A heat transfer fluid supply unit 600 supplying may be provided.

For reference, controlling the temperature control unit 200 in the temperature control step (S20) means adjusting the power applied to the heat transfer member 400 (thermoelectric element) or supplying the heat transfer fluid along the supply unit 600. It can be understood as a concept that includes all of controlling the supply amount of the heat transfer fluid. Basically, in the temperature control step (S20), the temperature of the polishing pad 111 can be adjusted by adjusting the temperature of the thermoelectric element to adjust the temperature of the fluid.

Hereinafter, a chemical mechanical polishing apparatus according to another embodiment of the present invention will be described. 9 is a view for explaining a chemical mechanical polishing apparatus according to another embodiment of the present invention, and FIGS. 10 to 12 are views for explaining a temperature controller in a chemical mechanical polishing apparatus according to another embodiment of the present invention. 13 is a chemical mechanical polishing apparatus according to another embodiment of the present invention, which is a view for explaining a fluid flow groove. In addition, the same or equivalent reference numerals are given to the same or equivalent parts as the above-described configuration, and a detailed description thereof will be omitted.

9 to 13, a chemical mechanical polishing apparatus according to another embodiment of the present invention includes a polishing pad 111 and a temperature controller 200'.

The polishing pad 111 may be formed to have a circular disk shape, and is provided on the upper surface of the rotating polishing table 110 .

A chemical mechanical polishing process may be performed by pressing the substrate onto the upper surface of the polishing pad 111 by the carrier head 120 in a state in which the slurry is supplied to the upper surface of the polishing pad 111, and the polishing pad 111 and After the chemical mechanical polishing process using the slurry is finished, the substrate 10 may be transferred to a cleaning device.

For reference, in the present invention, the substrate 10 may be understood as an object that can be polished on the polishing pad 111, and the present invention is not limited or limited by the type and characteristics of the substrate 10 no. For example, a wafer may be used as the substrate 10 .

The carrier head 120 may be provided in various structures according to required conditions and design specifications. For example, the carrier head 120 includes a body portion (not shown) rotatably provided, a base portion (not shown) provided rotatably together with the body portion, and an elastic membrane (not shown) provided on the bottom of the base portion. City) may be provided, including.

The elastic membrane has an opening formed in a central portion, an inner end adjacent to the central portion of the elastic membrane may be fixed to the base portion, and an outer end of the elastic membrane may be fixed to the base portion by a retainer ring coupled to an edge portion of the base portion. can

The elastic membrane may be provided in various structures according to required conditions and design specifications. For example, a plurality of flips (eg, ring-shaped flips) may be formed on the elastic membrane, and a plurality of pressure partitioned between the base portion and the elastic membrane along the radial direction of the base portion by the plurality of flips. A chamber may be provided.

A pressure sensor for measuring a pressure may be provided in each pressure chamber between the base part and the elastic membrane. The pressure of each pressure chamber may be individually controlled by the control of the pressure chamber controller 800', and the pressure at which the substrate 10 is pressed may be individually adjusted by adjusting the pressure of each pressure chamber.

In addition, a central pressure chamber (not shown) may be formed in the center of the carrier head 120 through the opening of the elastic membrane. The central pressure chamber not only directly communicates with the substrate 10 to pressurize the wafer during the polishing process, but also grips the substrate 10 by adhering the substrate 10 to the elastic membrane of the carrier head 120 by applying a suction pressure thereto. It may also serve to move to a third location (eg, cleaning device) in one state.

In addition, a conditioner for modifying the surface of the polishing pad 111 is provided on the other side of the upper surface of the polishing pad 111 .

The conditioner is provided to rotate about the center of rotation of the arm 141, and the polishing pad 111 can maintain a constant polishing surface by the mechanical dressing process of the conditioner 40.

The temperature controller 200' is provided above the polishing pad 111, divides the surface of the polishing pad 111 into a plurality of surface sections, and is configured to independently control the temperature of the plurality of surface sections. .

The surface of the polishing pad 111 may be divided into a plurality of surface sections by the temperature controller 200' in various ways according to required conditions and design specifications. For example, the surface of the polishing pad 111 may be divided into a plurality of ring-shaped surface sections having different diameters along the radial direction of the polishing pad 111 . Hereinafter, an example in which the surface of the polishing pad 111 is divided into six ring-shaped surface sections Z1 to Z6 along the radial direction of the polishing pad 111 will be described. In some cases, it is also possible that the surface of the polishing pad is divided into less than 5 or more than 7 surface sections. Alternatively, the temperature controller may divide the surface of the polishing pad into a plurality of surface sections having a radial structure based on the rotation center of the polishing pad or into a plurality of surface sections having other structures.

The temperature controller 200' may be provided in various structures capable of independently controlling the temperature of a plurality of surface sections according to required conditions and design specifications. For example, the temperature controller 200' may include a contact member 300' and a heat transfer member 400'.

The contact member 300' is provided in each of a plurality of surface sections and directly contacts the surface of the polishing pad 111 to enable heat transfer with the polishing pad 111 in the plurality of surface sections.

The contact member 300' contacts the polishing pad 111 and may be formed of various structures and materials capable of transferring heat. Preferably, the contact member 300' may be formed of a material capable of maximizing heat transfer efficiency while minimizing damage to the polishing pad 111. For example, the contact member 300' may be formed of a ceramic material such as silicon carbide (SiC) having high thermal conductivity.

The contact member 300' may be provided to contact the surface of the polishing pad 111 in various ways according to required conditions and design specifications. For example, the contact member 300' may make surface contact or line contact with the surface of the polishing pad 111. Hereinafter, an example in which the contact member 300' is formed in the form of a square block having a width corresponding to the width of each surface section will be described. In some cases, it is also possible to configure the contact member to indirectly contact the surface of the polishing pad by using an intermediate medium having excellent thermal conductivity.

For reference, the temperature control unit 200' individually controls the temperature of a plurality of surface sections, but the temperature control unit 200' may be partially provided on a partial area of the upper surface of the polishing pad 111. In this structure, a chemical mechanical polishing process using a carrier head and a reforming process of the polishing pad 111 using a conditioner are performed on the upper surface of the polishing pad 111, and the surface temperature is controlled by the temperature control unit 200'. Allows the process to be performed concurrently.

The heat transfer member 400' is provided on the upper surface of the contact member 300' so that heat transfer with the contact member 300' is achieved, and heat transfer between the heat transfer member 400' and the heat transfer member 400' is achieved by controlling the temperature of the heat transfer member 400'. It is configured to be able to adjust the temperature of the contact member 300 '. For example, the heat transfer member 400' may be selectively heated or cooled according to the temperature of a plurality of surface sections. For example, when the temperature of the specific surface section is high, the heat transfer member 400' is cooled, thereby lowering the temperature of the contact member 300' existing in the specific surface section, thereby contacting the specific surface section with the contact member 300'. temperature can be lowered. Conversely, when the temperature of the other specific surface section is low, it is also possible to heat the heat transfer member 400' to increase the temperature of the other specific surface section via the contact member 300'.

The type and characteristics of the heat transfer member 400' may be variously changed according to required conditions and design specifications. Referring to FIG. 10 , a conventional thermoelectric element using heat absorption or heat generation by a Peltier effect may be used as the heat transfer member 400'.

10 to 12, a cooling unit 500' for cooling the heat transfer member 400' may be provided above the heat transfer member 400'.

The cooling unit 500' may be provided to dissipate heat from the heat transfer member 400' to the outside. The cooling unit 500' may be provided in various structures capable of transferring heat to the heat transfer member 400', and the present invention is not limited or limited by the structure and characteristics of the cooling unit 500'. For example, the cooling unit 500' includes a cooling plate 510' connected to the upper portion of the heat transfer member 400' to enable heat transfer, and a cooling fluid flowing along the inside of the cooling plate 510'. It may be configured to include a cooling fluid flow path 520'.

Cooling fluid may be individually supplied or integrally supplied to the cooling fluid passages 520' provided to each of the cooling units 500'. For example, referring to FIG. 12, the inlet of the cooling fluid flow path 520' of each cooling unit 500' may be commonly connected to a cooling fluid injection line, and the cooling fluid flow path of each cooling unit 500' The outlet of 520' may be commonly connected to a cooling fluid discharge line.

In addition, the cooling plate 510' may be formed of a material having excellent thermal conductivity, and various types of fluids may be used as the cooling fluid.

In addition, the contact member 300' and the heat transfer member 400', which are individually provided in the plurality of surface sections, may be integrally connected by a connection member 600' provided on the upper part of the polishing pad 111. .

The connection member 600' may be provided in various structures capable of integrally connecting the contact member 300' and the heat transfer member 400' adjacent to each other. For example, the connecting member 600' may be formed in a bar shape having a predetermined length, and on the lower surface of the connecting member 600', a cooling unit 500' corresponding to each surface section, and a heat transfer member 400' ) and the contact member 300' may be sequentially attached.

In addition, the connection member 600' may be formed of a flexible material, and the contact member 300' is connected to the connection member 600' by its own weight to the polishing pad ( 111) may be configured to contact.

Here, the fact that the contact member 300' contacts the polishing pad 111 by its own weight means that the connection member 600' is bent by the weight of the contact member 300' and the contact member 300' It can be understood as being in contact with the polishing pad 111 . In addition, when the contact member 300' is in contact with the polishing pad 111 by its own weight, the load of the contact member 300' and the connection member 600' acts on the surface of the polishing pad 111 at all. Otherwise, only a very small portion of the total load of the contact member 300' and the connection member 600' acts on the surface of the polishing pad 111.

Preferably, a flow guide groove 610' may be formed in the connection member 600' so that the fluidity of the connection member 600' along the vertical direction can be effectively guaranteed for each of the plurality of surface sections. For example, the flow guide groove 610' may be formed on the lower surface of the connecting member 600' so as to be formed at a corresponding position between a plurality of surface section areas. In some cases, a flow guide groove may be formed on the upper surface of the connecting member, or other structures may provide fluidity to the connecting member.

In addition, referring to FIG. 13 , a fluid flow groove 310' may be formed on the bottom surface of the contact member 300' through which the fluid present on the upper surface of the polishing pad 111 flows.

Here, the fluid present on the upper surface of the polishing pad 111 may include at least one of a slurry (CMP slurry) and washing water (eg, DIW) present on the upper surface of the polishing pad 111. there is. In some cases, the fluid present on the upper surface of the polishing pad may include a gas forcibly flowing on the upper surface of the polishing pad.

As the polishing pad 111 rotates, the fluid present on the upper surface of the polishing pad 111 may flow along the fluid flow groove 310'. Preferably, the fluid flow groove 310' may be provided so that the fluid flows in a direction from the inside to the outside of the polishing pad 111. For example, the fluid flow groove 310 ′ may be formed in a curved shape from the inside to the outside of the polishing pad 111 .

In this structure, the fluid present on the upper surface of the polishing pad 111, that is, the fluid used in the chemical mechanical polishing process and foreign substances contained in the fluid flow along the fluid flow groove 310' to the inside of the polishing pad 111. After flowing in the direction toward the outside, it is allowed to be discharged to the outside of the polishing pad 111.

Referring back to FIG. 9 , the chemical mechanical polishing apparatus according to the present invention has a temperature measurement unit 700' for measuring the temperature of the polishing pad 111, and a temperature measurement according to the result measured by the temperature measurement unit 700'. A control unit 800' for controlling the control unit 200' may be included.

The temperature measuring unit 700 ′ may be provided to measure the temperature of the polishing pad 111 in various ways according to required conditions and design specifications. For example, referring to FIG. 9 , the temperature measuring unit 700' may include a plurality of temperature sensors 710' disposed for each of a plurality of surface section areas, and the controller 800' may include a plurality of temperature sensors. Depending on the result measured in 710', the temperature of a plurality of surface sections can be individually controlled.

Here, the control unit 800' controls the temperature control unit 200' means that the power applied to the heat transfer member 400' (eg, a thermoelectric element) is adjusted or the cooling unit 500' It can be understood as a concept that includes all control of cooling performance (cooling fluid supply amount).

As the temperature sensor 710', various temperature sensors 710' may be used according to required types and design specifications. For example, a conventional infrared (IR) temperature sensor 710' may be used as the temperature sensor 710', and the temperature sensor 710' may be formed in a sensor mounting hole formed on the above-described connection member 600' ( not shown). In some cases, it is possible to use other non-contact sensors as temperature sensors. Alternatively, it is also possible to mount a contact temperature sensor on the upper surface of the polishing table on which the polishing pad is seated and measure the temperature of the polishing pad using the contact temperature sensor.

Meanwhile, FIG. 15 is a block diagram for explaining a control method of a chemical mechanical polishing apparatus according to another embodiment of the present invention. In addition, the same or equivalent reference numerals are given to the same or equivalent parts as the above-described configuration, and a detailed description thereof will be omitted.

Referring to FIG. 15, a polishing pad 111 in contact with a substrate during a chemical mechanical polishing process, provided on top of the polishing pad 111, divides the surface of the polishing pad 111 into a plurality of surface sections, and A control method of a chemical mechanical polishing apparatus including a temperature control unit 200' for independently adjusting the temperature of a surface section includes a temperature measuring step (S10) of measuring the surface temperature of the polishing pad 111, the temperature and a temperature control step (S20) of adjusting the temperature of the plurality of surface sections according to the results measured in the measuring step.

Step 2-1:

First, the surface temperature of the polishing pad 111 is measured (S10).

For reference, the surface of the polishing pad 111 may be divided into a plurality of surface sections in various ways according to required conditions and design specifications. For example, the surface of the polishing pad 111 may be divided into a plurality of ring-shaped surface sections having different diameters along the radial direction of the polishing pad 111 .

In the temperature measuring step (S10), the temperature of each surface section can be measured in various ways according to required conditions and design specifications. For example, the temperature of each surface section may be measured by a temperature measuring unit 700' including a plurality of temperature sensors 710' arranged for each of a plurality of surface section areas.

As the temperature sensor 710', various temperature sensors 710' may be used according to required types and design specifications. For example, a conventional infrared (IR) temperature sensor 710' may be used as the temperature sensor 710'. In some cases, it is also possible to mount a contact temperature sensor on the upper surface of the polishing plate on which the polishing pad is seated and measure the temperature of the polishing pad using the contact temperature sensor.

Step 2-2:

Next, the temperature of the plurality of surface sections is adjusted according to the result measured in the temperature measurement step (S20).

That is, in the temperature control step (S20), the temperature of the plurality of surface sections may be individually adjusted according to the temperatures of the plurality of surface sections individually measured in the temperature measurement step (S10).

For reference, the temperature control of the polishing pad 111 in the temperature control step (S20) may be performed in various ways according to required conditions and design specifications.

For example, in the temperature adjusting step ( S20 ), the surface temperature of the polishing pad 111 may be adjusted by controlling the temperature controller 200 ′ provided above the polishing pad 111 .

The temperature controller 200' may be provided in various structures capable of adjusting the surface temperature of the polishing pad 111 according to required conditions and design specifications. For example, the temperature controller 200' includes a contact member 300' contacting the surface of the polishing pad 111 to enable heat transfer with the polishing pad 111, and heat transfer between the contact member 300' and the contact member 300'. Each of the plurality of surface sections including a thermoelectric element formed thereon and a cooling unit 500' for cooling the thermoelectric element may be individually provided.

The contact member 300' contacts the polishing pad 111 and may be formed of various structures and materials capable of transferring heat. Preferably, the contact member 300' may be formed of a material capable of maximizing heat transfer efficiency while minimizing damage to the polishing pad 111.

The heat transfer member 400' is provided on the upper surface of the contact member 300' so that heat transfer with the contact member 300' is achieved, and heat transfer between the heat transfer member 400' and the heat transfer member 400' is achieved by controlling the temperature of the heat transfer member 400'. It is configured to be able to adjust the temperature of the contact member 300 '. For example, the heat transfer member 400' may be selectively heated or cooled according to the temperature of a plurality of surface sections.

The type and characteristics of the heat transfer member 400' may be variously changed according to required conditions and design specifications. For example, as the heat transfer member 400', a conventional thermoelectric element using heat absorption or heat generation by a Peltier effect may be used.

In addition, a cooling unit 500' for cooling the heat transfer member 400' may be provided above the heat transfer member 400'. The cooling unit 500' may be provided in various structures capable of radiating heat from the heat transfer member 400' to the outside. For example, the cooling unit 500' includes a cooling plate 510' connected to the upper portion of the heat transfer member 400' to enable heat transfer, and a cooling fluid flowing along the inside of the cooling plate 510'. It may be configured to include a cooling fluid flow path 520'.

In addition, the contact member 300' and the heat transfer member 400', which are individually provided in the plurality of surface sections, may be integrally connected by a connection member 600' provided on the upper part of the polishing pad 111. . Preferably, the connection member 600' may be formed of a flexible material, and the contact member 300' is connected to the connection member 600' by its own weight to the polishing pad ( 111) may be configured to contact.

For reference, controlling the temperature control unit 200' in the temperature control step (S20) means adjusting power applied to the heat transfer member 400' (eg, a thermoelectric element) or cooling unit 500. ') can be understood as a concept that includes all of adjusting the cooling performance (cooling fluid supply amount). Basically, in the temperature control step (S20), the temperature of the polishing pad 111 can be adjusted by adjusting the temperature of the thermoelectric element to adjust the temperature of the contact member 300'.

In addition, a method for controlling a chemical mechanical polishing apparatus according to another embodiment of the present invention includes a fluid flow step of flowing the fluid present on the upper surface of the polishing pad 111 from the inside to the outside of the polishing pad 111. can include

To this end, a fluid flow groove (see 310' in FIG. 13) through which fluid existing on the upper surface of the polishing pad 111 flows may be formed on the bottom surface of the contact member 300', and the polishing pad 111 The fluid present on the upper surface of the polishing pad 111, in other words, the fluid used in the chemical mechanical polishing process and foreign substances included in the fluid flow along the fluid flow groove 310' from the inside to the outside of the polishing pad 111, and then It may be discharged to the outside of the polishing pad 111 .

Here, the fluid present on the upper surface of the polishing pad 111 may include at least one of a slurry (CMP slurry) and washing water (eg, DIW) present on the upper surface of the polishing pad 111. there is. In some cases, the fluid present on the upper surface of the polishing pad may include a gas forcibly flowing on the upper surface of the polishing pad.

As described above, although it has been described with reference to preferred embodiments of the present invention, those skilled in the art can variously modify and modify the present invention within the scope not departing from the spirit and scope of the present invention described in the claims below. You will understand that it can be changed.

110: polishing table 111: polishing pad
120: carrier head 200: temperature control unit
300: section dividing member 310: housing member
320: bulkhead member 330: slurry supply hole
340: slurry application slot 400: heat transfer member
500: heat dissipation member 600: heat transfer fluid supply unit
610: injection nozzle 710: first temperature measuring unit
720: second temperature measurement unit 800: control unit

Claims (37)

delete delete delete delete delete delete delete delete delete delete delete In the chemical mechanical polishing device,
a polishing pad with which the substrate is in contact during a chemical mechanical polishing process;
A heat transfer member provided to be spaced apart from the top of the polishing pad and controlling the surface temperature of the polishing pad using the fluid present on the upper surface of the polishing pad as a medium, and transferring heat with the fluid present on the surface of the polishing pad; a heat transfer fluid supply unit provided above the heat transfer member to supply a heat transfer fluid; and a heat transfer fluid supply unit connected to an outlet of the heat transfer fluid supply unit and supplied along the heat transfer fluid supply unit to spray the polishing pad on the surface of the polishing pad. A spray nozzle for adjusting the temperature of the pad and discharging foreign substances remaining on the surface of the polishing pad to the outside of the polishing pad, and disposed behind the spray nozzle along the rotation direction of the polishing pad to distribute slurry to the polishing pad A temperature control unit including a slurry supply hole for supplying;
Chemical mechanical polishing apparatus comprising a.
According to claim 12,
A slurry application slot communicating with the slurry supply hole is formed on the bottom surface of the temperature controller facing the polishing pad,
The chemical mechanical polishing apparatus, characterized in that the slurry supplied to the slurry supply hole is applied to the upper surface of the polishing pad along the slurry application slot.
In the chemical mechanical polishing device,
a polishing pad with which the substrate is in contact during a chemical mechanical polishing process;
Provided to be spaced apart from the upper part of the polishing pad and controlling the surface temperature of the polishing pad using a fluid present on the upper surface of the polishing pad as a medium, dividing the surface of the polishing pad into a plurality of surface sections, and a temperature control unit that independently controls the temperature of the surface section;
a first temperature measurement unit for measuring the surface temperature of the polishing pad at an entrance of the temperature controller along the rotational direction of the polishing pad;
a second temperature measurement unit for measuring the surface temperature of the polishing pad at an outlet of the temperature controller along the rotational direction of the polishing pad;
a control unit controlling the temperature control unit according to the results measured by the first temperature measurement unit and the second temperature measurement unit;
Chemical mechanical polishing apparatus comprising a.
According to claim 14,
The control unit controls the temperature control unit so that the temperature difference between the temperature measured by the first temperature measurement unit and the temperature measured by the second temperature measurement unit is within a predetermined range.
According to claim 14,
The first temperature measuring unit includes a plurality of first temperature sensors disposed at the entrance of the temperature control unit along the rotational direction of the polishing pad to correspond to the plurality of surface sections,
The second temperature measurement unit comprises a plurality of second temperature sensors disposed at the outlet of the temperature control unit along the rotational direction of the polishing pad to correspond to the plurality of surface sections.


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