KR102552035B1 - OLED display device and method for manufacturing the same - Google Patents

Abstract

According to one aspect of the present invention, preparing a substrate on which an anode electrode layer including a thin film transistor and an anode electrode respectively corresponding to R, G, and B sub-pixels to be formed is formed; aligning a fine mask for a common layer on which patterns corresponding to each of the R, G, and B sub-pixels are formed with the substrate, and depositing a hole organic layer for each sub-pixel; aligning a fine mask for an R light emitting layer having a pattern corresponding to the R subpixel and the substrate, and depositing an R light emitting layer; aligning the substrate with a fine mask for the G light-emitting layer having a pattern corresponding to the G sub-pixel, and depositing the G light-emitting layer; aligning the substrate with a fine mask for the B light-emitting layer having a pattern corresponding to the B sub-pixel, and depositing the B light-emitting layer; aligning the substrate with a fine mask for a common layer on which patterns corresponding to the R, G, and B sub-pixels are formed, and depositing an electron organic layer for each sub-pixel; A method for manufacturing an OLED display device is provided, including forming a cathode electrode layer on the substrate.

Description

OLED display device and method for manufacturing an OLED display device {OLED display device and method for manufacturing the same}

The present invention relates to an OLED display device and a method for manufacturing an OLED display device.

Organic Luminescence Emitting Device (OLED) is a self-emitting device that emits light by itself using the electroluminescence phenomenon that emits light when a current flows through a fluorescent organic compound. Therefore, a lightweight and thin flat panel display device can be manufactured.

A flat panel display device using such an organic light emitting device has a fast response speed and a wide viewing angle, and is emerging as a next-generation display device.

In the organic electroluminescent device, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer, which are organic material layers other than the anode electrode and the cathode electrode, are made of organic thin films, and these organic thin films are formed on a substrate by vacuum thermal evaporation. will be deposited on

The vacuum thermal evaporation method consists of placing a substrate in a vacuum chamber, aligning a mask having a predetermined pattern on the substrate, and then heating a crucible of an evaporation source to deposit deposition particles evaporated in the crucible on the substrate. .

Common layers such as the hole injection layer, the hole common layer of the hole transport layer, and the electron common layer such as the electron transport layer and the electron injection layer use an open metal mask (OMM) to perform organic material deposition. And, the light emitting layer is deposited with an organic material using a fine metal mask (FMM) for each R, G, and B subpixel. Accordingly, the common layer is deposited on the entire substrate without being separated from each other by pixel, and the light emitting layer is deposited separately from each other for each sub-pixel.

In this way, when the common layers are connected to each other on the entire surface without being separated from each other, an etching process of the common layer is required to electrically connect the cathode layer with the auxiliary electrode, and during use, propagation of pixel defects due to defects in the cathode layer is prevented. There is a risk of causing

Republic of Korea Patent Registration No. 10-2067968 (2020.01.20 notice)

The present invention is an OLED display device capable of preventing the propagation of pixel defects due to the omission of the etching process of the common layer and the failure of the cathode layer by depositing a common layer providing electrons or electrons as a light emitting layer to be separated from each other for each sub-pixel. And to provide a method for manufacturing an OLED display device.

According to one aspect of the present invention, preparing a substrate on which an anode electrode layer including a thin film transistor and an anode electrode respectively corresponding to R, G, and B sub-pixels to be formed is formed; aligning a fine mask for a common layer on which patterns corresponding to each of the R, G, and B sub-pixels are formed with the substrate, and depositing a hole organic layer for each sub-pixel; aligning a fine mask for an R light emitting layer having a pattern corresponding to the R subpixel and the substrate, and depositing an R light emitting layer; aligning the substrate with a fine mask for the G light-emitting layer having a pattern corresponding to the G sub-pixel, and depositing the G light-emitting layer; aligning the substrate with a fine mask for the B light-emitting layer having a pattern corresponding to the B sub-pixel, and depositing the B light-emitting layer; aligning the substrate with a fine mask for a common layer on which patterns corresponding to the R, G, and B sub-pixels are formed, and depositing an electron organic layer for each sub-pixel; A method for manufacturing an OLED display device is provided, including forming a cathode electrode layer on the substrate.

In the substrate, an auxiliary electrode may be formed between the anode electrodes. In this case, as the cathode electrode layer is formed in the step of forming the cathode electrode layer, the auxiliary electrode and the cathode electrode layer may be connected.

The anode electrode layer may be a transparent electrode of indium tin oxide (ITO), and the cathode electrode layer may be a thin metal electrode or a conductive oxide layer.

The substrate may include an auxiliary electrode formed between the anode electrode; Banks covering edges of the anode electrode and edges of the auxiliary electrode may be further included at both ends of the auxiliary electrode.

Each of the R, G, and B subpixels may be formed on the anode electrode between the banks.

According to another aspect of the present invention, a substrate having an anode electrode layer including a thin film transistor and anode electrodes respectively corresponding to the R, G, and B sub-pixels; an R subpixel including a hole organic layer, an R emission layer, and an electron organic layer sequentially stacked on an anode electrode corresponding to the R subpixel; a G subpixel spaced apart from the R subpixel and including a hole organic layer, a G emission layer, and an electron organic layer sequentially stacked on an anode electrode corresponding to the G subpixel; a B subpixel spaced apart from the R subpixel and the G subpixel and including a hole organic layer, a B emission layer, and an electron organic layer sequentially stacked on an anode electrode corresponding to the B subpixel; An OLED display device including a cathode electrode layer formed on the R sub-pixel, the G sub-pixel, and the B sub-pixel is provided.

The hole organic layer and the electron organic layer of each of the R sub-pixel, G sub-pixel, and B sub-pixel are deposited using a fine mask for a common layer formed with a pattern corresponding to each of the R, G, and B sub-pixels. The light-emitting layer of each of the R sub-pixel, G sub-pixel, and B sub-pixel is deposited using a fine mask for the light-emitting layer having a pattern corresponding to any one of the R, G, and B sub-pixels. can

In the substrate, an auxiliary electrode is formed between the anode electrode. In this case, as the cathode electrode layer is formed, the auxiliary electrode and the cathode electrode layer between the R subpixel, the G subpixel, and the B subpixel are formed. can be connected

The anode electrode layer may be a transparent electrode of indium tin oxide (ITO), and the cathode electrode layer may be a thin metal electrode or a conductive oxide layer.

The substrate may include an auxiliary electrode formed between the anode electrode; Banks covering edges of the anode electrode and edges of the auxiliary electrode may be further included at both ends of the auxiliary electrode.

Each of the R subpixel, the G subpixel, and the B subpixel may be formed on the anode electrode between the banks.

According to an embodiment of the present invention, the common layer providing holes or electrons to the light emitting layer is deposited so as to be separated from each other for each sub-pixel, so that the etching process of the common layer can be omitted and the propagation of pixel defects due to defects in the cathode layer can be prevented. .

1 is a flowchart of a method for manufacturing an OLED display device according to an embodiment of the present invention.
2 to 8 are flowcharts of a method of manufacturing an OLED display device according to an embodiment of the present invention.
9 is a view showing a substrate of an OLED display device manufacturing method according to an embodiment of the present invention.
10 is a view showing a fine mask for a common layer in a method for manufacturing an OLED display device according to an embodiment of the present invention.
11 to 13 are views for explaining a method of forming a light emitting layer in a method of manufacturing an OLED display device according to an embodiment of the present invention.
14 is a schematic diagram of an OLED display device according to another embodiment of the present invention.

Since the present invention can apply various transformations and have various embodiments, specific embodiments will be illustrated in the drawings and described in detail in the detailed description. However, it should be understood that this is not intended to limit the present invention to specific embodiments, and includes all transformations, equivalents, and substitutes included in the spirit and scope of the present invention. In describing the present invention, if it is determined that a detailed description of related known technologies may obscure the gist of the present invention, the detailed description will be omitted.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. These terms are only used for the purpose of distinguishing one component from another.

Hereinafter, an embodiment of an OLED display device and a method for manufacturing an OLED display device according to the present invention will be described in detail with reference to the accompanying drawings, and in the description with reference to the accompanying drawings, the same or corresponding components are indicated by the same reference numbers and duplicate descriptions thereof will be omitted.

1 is a flowchart of a method for manufacturing an OLED display device according to an embodiment of the present invention, and FIGS. 2 to 8 are flowcharts of a method for manufacturing an OLED display device according to an embodiment of the present invention. 9 is a view showing a substrate of a method for manufacturing an OLED display device according to an embodiment of the present invention, and FIG. 10 is a fine mask for a common layer of a method for manufacturing an OLED display device according to an embodiment of the present invention. it is a drawing 11 to 13 are diagrams for explaining a method of forming a light emitting layer in a method of manufacturing an OLED display device according to an embodiment of the present invention.

2 to 13, the substrate 12, the thin film transistor 14, the planarization layer 16, the anode electrode 18, the anode electrode layer 19, the auxiliary electrode 20, the bank 21, the hole injection layer (24), hole transport layer 25, hole organic layer 26, R light emitting layer 28, electron transport layer 30, electron injection layer 31, electron organic layer 32, R subpixel 33, G light emitting layer (34), G sub-pixel 35, B light-emitting layer 36, B sub-pixel 37, cathode electrode layer 38, fine mask 39 for common layer, fine mask 40 for R light-emitting layer, for G light-emitting layer A fine mask 42 and a fine mask 44 for the B light emitting layer are shown.

The OLED display device manufacturing method according to the present embodiment includes the steps of preparing a substrate 12 on which thin film transistors 14 and anode electrodes 18 respectively corresponding to R, G, and B sub-pixels 37 to be formed are formed. and; A fine mask 39 for the common layer on which patterns corresponding to the R, G, and B subpixels 33, 35, and 37 are formed is aligned with the substrate 12, and the hole organic layer for each subpixel is aligned. depositing (26); aligning the substrate 12 with the fine mask 40 for the R light emitting layer on which the pattern corresponding to the R subpixel 33 is formed, and depositing the R light emitting layer 28; aligning the substrate 12 with the fine mask 40 for the R light-emitting layer having the pattern corresponding to the G sub-pixel 35 formed thereon, and depositing the G light-emitting layer 34; aligning the substrate 12 with the fine mask 44 for the B light-emitting layer having a pattern corresponding to the B sub-pixel 37, and depositing the B light-emitting layer 36; The substrate 12 is aligned with the fine mask 39 for the common layer on which patterns corresponding to the R, G, and B subpixels 33, 35, and 37 are formed, and the electron organic layer 32 is formed for each subpixel. depositing; and forming a cathode electrode layer 38 on the substrate 12 .

Hereinafter, a method for manufacturing an OLED display device will be described in detail with reference to FIGS. 2 to 8 .

First, as shown in FIG. 2, prepare a substrate 12 on which thin film transistors 14 and anode electrodes 18 corresponding to R, G, and B sub-pixels 33, 35, and 37 to be formed are formed. Do (S200). The prepared substrate 12 may be loaded into a deposition chamber for deposition.

As shown in FIG. 2, the 'substrate 12' according to the present embodiment is a substrate prepared immediately before deposition of the R, G, and B sub-pixels 33, 35, and 37 is performed, and is a glass substrate. It may be a substrate 12 on which a thin film transistor 14, a planarization layer 16, an anode electrode 18 electrically connected to the thin film transistor 14, and the like are formed.

The anode electrode 18 may be formed for each subpixel to correspond to the R, G, and B subpixels 33, 35, and 37, respectively. Hereinafter, the layer in which the anode electrode 18 is formed for each sub-pixel is referred to as the anode electrode layer 19 .

The OLED display is a principle in which a voltage is applied between the anode electrode layer 19 and the cathode electrode layer 38 so that a difference in energy is formed in the sub-pixels 33, 35, and 37 to self-luminesce, and the injected electrons and holes This recombination causes the remaining energy to be generated as light. At this time, it is possible to control the wavelength of light emitted according to the amount of the dopant of the organic material, and it is possible to realize full color.

In this embodiment, a form formed by depositing a transparent conductive oxide (Indium Tin Oxide: ITO) as the anode electrode layer 19 on the substrate 12 by a sputtering method is presented.

In this step, the substrate 12 on which the thin film transistor 14, the anode electrode 18, and the like are formed is prepared for deposition of an organic material.

On the other hand, the substrate 12, the auxiliary electrode 20 formed between the anode electrode 18 and; A bank 21 covering the edge of the anode electrode 18 and the edge of the auxiliary electrode 20 may be included at both ends of the auxiliary electrode 20 . When the bank 21 is formed on the substrate 12 , each of the subpixels 33 , 35 , and 37 may be formed on the anode electrode 18 between the banks 21 .

In order for the OLED display device to implement full color, R sub-pixel 33 and G sub-pixel (which form red (R), green (G), and blue (B), which are the three primary colors of light) 35), unit pixels composed of three sub-pixels of the B sub-pixel 37 are arranged at regular intervals. Each sub-pixel includes an organic material layer formed by sequentially depositing a hole injection layer 24, a hole transport layer 25, a corresponding emission layer, an electron transport layer 30, and an electron injection layer 31.

Next, as shown in FIG. 3, a fine mask 39 for the common layer having patterns corresponding to the R, G, and B subpixels 33, 35, and 37, respectively, and the substrate 12 are aligned. and depositing a hole organic layer 26 for each sub-pixel (S200).

10 shows a fine mask 39 for a common layer according to the present embodiment, in which opening patterns corresponding to R, G, and B sub-pixels 33, 35, and 37 are formed. The fine mask 39 for the common layer is aligned on the substrate 12 to correspond to the regions of the R, G, and B sub-pixels 37 to be formed, and the hole organic layer 26 is deposited.

In general, a hole organic layer in which holes move and an electron organic layer in which electrons move are deposited on a substrate using an open mask with an open front surface, and R, G, and B light emitting layers are respectively for each sub-pixel. It is formed by depositing each of them using a fine metal mask in an independent chamber.

By the way, in this embodiment, the hole organic layer 26 and the electron organic layer 32, which are common layers, have patterns corresponding to the R, G, and B sub-pixels 33, 35, and 37, respectively. The fine mask 39 for the common layer is formed. A method of forming a common layer separated for each sub-pixel on the substrate 12 using

That is, as shown in FIG. 10, the hole organic layer 26 or the hole organic layer 26 or As a form of forming the electron organic layer 32, the common layer takes the form of each sub-pixel separated from each other, unlike the prior art.

According to this method, each of the subpixels 33, 35, and 37 including the common layer is separated from each other, thereby omitting the conventional etching process of the common layer, and preventing the propagation of pixel defects due to defects in the cathode layer.

The hole organic layer 26 is an organic material layer for injecting holes into the light emitting layer, and may be composed of a hole injection layer 24 (Hole Injection Layer, HIL) and a hole transport layer 25 (Hole Transport Layer, HTL), and an electron organic layer ( 32) is an organic material layer for generating and injecting electrons into the light emitting layer, and may be composed of an electron transport layer 30 (electron transfer layer, ETL) and an electron injection layer 31 (electron injection layer, EIL).

According to this embodiment, as shown in FIG. 3, a hole injection layer 24 (Hole Injection Layer, HIL) and a hole transport layer 25 are formed on the anode electrode 18 using the fine mask 39 for the common layer. ) (Hole Transport Layer, HTL) is sequentially deposited.

In forming the hole organic layer 26, after aligning one fine mask 39 for the common layer with the substrate 12, the hole injection layer 24 and the hole transport layer 25 may be sequentially deposited, but the same mask In order to avoid contamination between the hole injection layer 24 and the hole transport layer 25 due to use, fine masks 39 for individual common layers are aligned on the substrate 12, respectively, and the hole injection layer 24 and the hole transport layer 25 are formed. It is also possible to deposit each of them separately.

Next, as shown in FIG. 4, the fine mask 40 for the R light emitting layer having the pattern corresponding to the R subpixel 33 formed thereon is aligned with the substrate 12, and the R light emitting layer 28 is deposited ( S300).

11(a) shows a fine mask 40 for an R light emitting layer in which an opening pattern is formed in a corresponding region of an R subpixel 33. (40) is aligned, and as shown in FIG. 11 (b), an R light emitting layer (28) is deposited on the corresponding hole organic layer (26).

Next, as shown in FIG. 5, the substrate 12 is aligned with the fine mask 40 for the R light emitting layer on which the pattern corresponding to the G subpixel 35 is formed, and the G light emitting layer 34 is deposited ( S400).

12(a) shows a fine mask 42 for the G light emitting layer having an opening pattern formed in a corresponding region of the G subpixel 35, and a fine mask 42 for the B light emitting layer on the substrate 12 on which the hole organic layer 26 is formed. (42) is aligned, and as shown in FIG. 12 (b), a G light emitting layer (34) is deposited on the corresponding hole organic layer (26).

Next, as shown in FIG. 6, the substrate 12 is aligned with the fine mask 44 for the B light-emitting layer on which the pattern corresponding to the B sub-pixel 37 is formed, and the B light-emitting layer 36 is deposited ( S500).

13(a) shows a fine mask 44 for the B light-emitting layer having an opening pattern formed in a corresponding region of the B sub-pixel 37, and a fine mask 44 for the B light-emitting layer on the substrate 12 having the hole organic layer 26 formed thereon (44) is aligned, and as shown in FIG. 13(b), a B light emitting layer 36 is deposited on the hole organic layer 26.

Through the above process, as shown in FIG. 13 (b), an R light emitting layer 28, a G light emitting layer 34, and a B light emitting layer 36 are formed on the corresponding hole organic layer 26. In this embodiment, a method of depositing the light emitting layers in the order of the R light emitting layer 28, the G light emitting layer 34, and the B light emitting layer 36 has been proposed, but the deposition order of the light emitting layers may be different.

Next, as shown in FIG. 7, the substrate 12 is aligned with the fine mask 39 for the common layer on which patterns corresponding to the R, G, and B sub-pixels 33, 35, and 37 are formed, respectively. An electron organic layer 32 is deposited for each pixel (S600). In this step, similar to the method of forming the hole organic layer 26, the electron organic layer 32 is formed using the fine mask 39 for the common layer having patterns corresponding to the R, G, and B subpixels 33, 35, and 37, respectively. form

That is, as shown in FIG. 10, the corresponding R, G, and B subpixels 33, 35, and 37 are formed using the fine mask 39 for the common layer formed with corresponding opening patterns, respectively. 33, 35, 37) to form an electron organic layer 32.

As described above, the electron organic layer 32 is an organic material layer that generates and injects electrons into the light emitting layer, and after aligning the fine mask 39 for the common layer with the substrate 12, the electron transport layer 30 and the electron injection layer 31 can be sequentially deposited.

In forming the electron organic layer 32, the electron transport layer 30 and the electron injection layer 31 may be sequentially deposited after aligning one fine mask 39 for the common layer with the substrate 12, but using the same mask. In consideration of contamination between the electron transport layer 30 and the electron injection layer 31 according to the above, the electron transport layer 30 and the electron injection layer 31 are respectively aligned by aligning the individual fine masks 39 for the common layer with the substrate 12, respectively. Deposition is also possible.

Next, as shown in FIG. 8 , a cathode electrode layer 38 is formed on the substrate 12 (S700). Referring to FIG. 8 , a cathode electrode layer 38 is formed on the substrate 12 on which the R light emitting layer 28, the G light emitting layer 34, and the B light emitting layer 36 are formed on the corresponding anode electrode 18.

In contrast to the form in which a transparent electrode is formed by depositing an indium tin oxide (ITO) as the anode electrode layer 19, in this embodiment, a thin metal electrode is deposited on the organic material layer as the cathode electrode layer 38. present a form It is possible to form a transparent cathode electrode by depositing a thin metal electrode. In order to transmit light generated from the organic layer by forming Mg, Ag, Ca, Mg:Ag, Al:Li, etc., it can be formed as a thin film of about 200 Å. Of course, it is also possible to form the cathode electrode layer 38 with a conductive oxide film.

When the cathode electrode layer 38 is formed of a very thin film for transparency, there is a problem in that luminance becomes non-uniform due to difficulty in generating holes due to high sheet resistance. To this end, this problem can be solved by supplementing sheet resistance of the cathode electrode by placing the auxiliary electrode 20 in each sub-pixel and connecting it to the cathode electrode layer 38 .

In the conventional case, since the hole organic layer 26 and the electron organic layer 32 are deposited on the entire surface of the substrate 12 by an open mask, the upper part of the auxiliary electrode 20 is formed to connect the auxiliary electrode 20 and the cathode electrode. The organic material layer was removed or a separate partition wall was placed to connect the auxiliary electrode 20 and the cathode electrode.

However, in this embodiment, since the R sub-pixel 33, the G sub-pixel 35, and the B sub-pixel 37 are separately deposited, the cathode electrode is formed as an auxiliary electrode (by depositing the cathode electrode layer 38). 20) can be directly connected.

In the OLED display device formed by the above method, since the organic material layer is separated for each sub-pixel, propagation of defects to neighboring pixels due to a cathode electrode defect or a unit pixel defect can be prevented.

14 is a schematic diagram of an OLED display device according to another embodiment of the present invention.

14, a substrate 12, a thin film transistor 14, a planarization layer 16, an anode electrode 18, an anode electrode layer 19, an auxiliary electrode 20, a bank 21, a hole injection layer 24 , hole transport layer 25, hole organic layer 26, R light emitting layer 28, electron transport layer 30, electron injection layer 31, electron organic layer 32, R subpixel 33, G light emitting layer 34 , G subpixel 35, B light emitting layer 36, B subpixel 37, and cathode electrode layer 38 are shown.

In the OLED display device according to the present embodiment, a substrate having an anode electrode layer 19 including a thin film transistor 14 and anode electrodes 18 corresponding to the R, G, and B sub-pixels 33, 35, and 37, respectively, is formed. (12) and; an R subpixel 33 including a hole organic layer 26, an R emission layer 28, and an electron organic layer 32 sequentially stacked on the anode electrode 18 corresponding to the R subpixel 33; A hole organic layer 26, a G light emitting layer 34, and an electron organic layer 32 spaced apart from the R subpixel 33 and sequentially stacked on the anode electrode 18 corresponding to the G subpixel 35 are a G sub-pixel 35 comprising; A hole organic layer 26 and a B light emitting layer 36 spaced apart from the R subpixel 33 and the G subpixel 35 and sequentially stacked on the anode electrode 18 corresponding to the B subpixel 37 ), a B sub-pixel 37 including an electron organic layer 32; A cathode electrode layer 38 is formed on the R subpixel 33 , the G subpixel 35 , and the B subpixel 37 .

As shown in FIG. 2, the 'substrate 12' according to the present embodiment is a substrate prepared immediately before deposition of the R, G, and B sub-pixels 33, 35, and 37 is performed, and is a glass substrate. It may be a substrate 12 on which a thin film transistor 14, a planarization layer 16, an anode electrode 18 electrically connected to the thin film transistor 14, and the like are formed.

As the anode electrode layer 19 , a transparent conductive oxide film (Indium Tin Oxide: ITO) may be deposited on the substrate 12 by a sputtering method to form a transparent electrode.

The R subpixel 33 includes a hole organic layer 26 through which holes move, an R light-emitting layer 28, and electrons through which electrons move, which are sequentially stacked on the anode electrode 18 corresponding to the R subpixel 33. An organic layer 32 is included.

In addition, the G sub-pixel 35 is spaced apart from the R sub-pixel 33 and sequentially stacked on the anode electrode 18 corresponding to the G sub-pixel 35, a hole organic layer 26 through which holes move , G light emitting layer 34, and an electron organic layer 32 through which electrons move.

Further, the B sub-pixel 37 is spaced apart from the R sub-pixel 33 and the G sub-pixel 35 and sequentially stacked on the anode electrode 18 corresponding to the B sub-pixel 37. It includes a moving hole organic layer 26, a B light emitting layer 36, and an electron organic layer 32 in which electrons move.

The R subpixel 33, the G subpixel 35, and the B subpixel 37 are spaced apart from each other, and accordingly, the hole organic layer 26 and the electron organic layer 32 constituting each common layer are spaced apart from each other. do. This means that each sub-pixel is independently deposited.

That is, as described above, the hole organic layer 26 and the electron organic layer 32 of each of the R subpixel 33, the G subpixel 35, and the B subpixel 37 are It is deposited using a fine mask 39 (Fine mask) for the common layer on which patterns corresponding to each of the subpixel 35 and the B subpixel 37 are formed, and the R subpixel 33 and the B subpixel 37G The light emitting layer of each of the subpixel 35 and the third subpixel includes a fine mask 40 for the light emitting layer having a pattern corresponding to any one of the R subpixel 33 , the G subpixel 35 , and the B subpixel 37 . , 42, 44), each sub-pixel can be formed separately from each other.

In general, a hole organic layer in which holes move and an electron organic layer in which electrons move are deposited on a substrate using an open mask with an open front surface, and R, G, and B light emitting layers are respectively for each sub-pixel. It is formed by depositing each of them using a fine mask in an independent chamber.

By the way, in this embodiment, the hole organic layer 26 and the electron organic layer 32, which are common layers, have patterns corresponding to the R, G, and B sub-pixels 33, 35, and 37, respectively. The fine mask 39 for the common layer is formed. A common layer is formed for each sub-pixel on the substrate 12 by using, so that each sub-pixel has a form separated from each other.

The hole organic layer 26 is an organic material layer for injecting holes into the light emitting layer, and may be composed of a hole injection layer 24 (Hole Injection Layer, HIL) and a hole transport layer 25 (Hole Transport Layer, HTL), and an electron organic layer ( 32) is an organic material layer for generating and injecting electrons into the light emitting layer, and may be composed of an electron transport layer 30 (electron transfer layer, ETL) and an electron injection layer 31 (electron injection layer, EIL).

The cathode electrode layer 38 is formed on the R subpixel 33 , the G subpixel 35 , and the B subpixel 37 .

In contrast to the form in which a transparent electrode is formed by depositing an indium tin oxide (ITO) as the anode electrode layer 19, in this embodiment, a thin metal electrode is deposited on the organic material layer as the cathode electrode layer 38. present a form It is possible to form a transparent cathode electrode by depositing a thin metal electrode. In order to transmit light generated from the organic layer by forming Mg, Ag, Ca, Mg:Ag, Al:Li, etc., it can be formed as a thin film of about 200 Å. Of course, it is also possible to form the cathode electrode layer 38 with a conductive oxide film.

On the other hand, the substrate 12, the auxiliary electrode 20 formed between the anode electrode 18 and; A bank 21 covering the edge of the anode electrode 18 and the edge of the auxiliary electrode 20 may be included at both ends of the auxiliary electrode 20 . When the banks 21 are formed on the substrate 12, an organic material layer corresponding to each subpixel is formed on the anode electrode 18 between the banks 21.

In this embodiment, since the R subpixel 33, the G subpixel 35, and the B subpixel 37 are separated from each other, the cathode electrode is formed to prevent voltage drop by deposition of the cathode electrode layer 38. It can be directly connected to the auxiliary electrode 20 to be.

Since the OLED display elements formed by the above method are separated for each sub-pixel, propagation of defects to neighboring pixels due to a cathode electrode defect or a unit pixel defect can be prevented.

Although the above has been described with reference to specific embodiments of the present invention, those skilled in the art can make various modifications to the present invention within the scope not departing from the spirit and scope of the present invention described in the claims below. It will be understood that it can be modified and changed accordingly.

Many embodiments other than those described above are within the scope of the claims of the present invention.

12: substrate 14: thin film transistor
16: planarization layer 18: anode electrode
19: anode electrode layer 20: auxiliary electrode
21: bank 24: hole injection layer
25: hole transport layer 26: hole organic layer
28: R light emitting layer 30: electron transport layer
31: electron injection layer 32: electron organic layer
33: R sub-pixel 34: G light emitting layer
35: G sub-pixel 36: B light-emitting layer
37: B sub-pixel 38: cathode electrode layer
39: fine mask for common layer 40: fine mask for R light emitting layer
42: G fine mask for light emitting layer 44: fine mask for B light emitting layer

Claims (11)

preparing a substrate having an anode electrode layer including thin film transistors and anode electrodes respectively corresponding to R, G, and B sub-pixels to be formed;
Align the substrate with a fine mask for the common layer on which the opening patterns corresponding to the R, G, and B sub-pixels are formed, and deposit a hole organic layer for each sub-pixel so that each sub-pixel has a separate shape. step of doing;
aligning the substrate with a fine mask for the R light-emitting layer having an opening pattern corresponding to the R sub-pixel, and depositing the R light-emitting layer;
aligning the substrate with a fine mask for the G light-emitting layer having an opening pattern corresponding to the G sub-pixel, and depositing the G light-emitting layer;
aligning the substrate with a fine mask for the B light-emitting layer having an opening pattern corresponding to the B sub-pixel, and depositing the B light-emitting layer;
aligning the substrate with a fine mask for a common layer having opening patterns corresponding to each of the R, G, and B sub-pixels, and depositing an electron organic layer for each sub-pixel so that each sub-pixel has a separate shape;
A method for manufacturing an OLED display device comprising the step of forming a cathode electrode layer on the substrate.
According to claim 1,
In the substrate, an auxiliary electrode is formed between the anode electrode,
As the cathode electrode layer is formed in the step of forming the cathode electrode layer, the auxiliary electrode and the cathode electrode layer are connected.
According to claim 2,
The anode electrode layer is a transparent electrode of a transparent conductive oxide (Indium Tin Oxide: ITO),
Characterized in that the cathode electrode layer is a thin metal electrode or a conductive oxide film, OLED display device manufacturing method.
According to claim 1,
the substrate,
an auxiliary electrode formed between the anode electrode;
Further comprising a bank (bank) covering the edge of the anode electrode and the edge of the auxiliary electrode at both ends of the auxiliary electrode, OLED display device manufacturing method.
According to claim 4,
wherein each of the R, G, and B sub-pixels is formed on the anode electrode between the banks.
a substrate on which an anode electrode layer including thin film transistors and anode electrodes respectively corresponding to the R, G, and B sub-pixels is formed;
an R subpixel including a hole organic layer, an R emission layer, and an electron organic layer sequentially stacked on an anode electrode corresponding to the R subpixel;
a G subpixel separated from the R subpixel and including a hole organic layer, a G emission layer, and an electron organic layer sequentially stacked on an anode electrode corresponding to the G subpixel;
a B subpixel separated from the R subpixel and the G subpixel and including a hole organic layer, a B emission layer, and an electron organic layer sequentially stacked on an anode electrode corresponding to the B subpixel;
and a cathode electrode layer formed on the R sub-pixel, the G sub-pixel, and the B sub-pixel.
According to claim 6,
The hole organic layer and the electron organic layer of each of the R subpixel, G subpixel, and B subpixel,
It is deposited using a fine mask for a common layer formed with opening patterns corresponding to the R, G, and B sub-pixels, respectively;
The light emitting layer of each of the R subpixel, G subpixel, and B subpixel,
An OLED display device, characterized in that deposited using a fine mask for a light emitting layer having an opening pattern corresponding to any one of the R, G, and B sub-pixels.
According to claim 6,
In the substrate, an auxiliary electrode is formed between the anode electrode,
By forming the cathode electrode layer, the auxiliary electrode between the R sub-pixel, the G sub-pixel, and the B sub-pixel is connected to the cathode electrode layer.
According to claim 7,
The anode electrode layer is a transparent electrode of a transparent conductive oxide (Indium Tin Oxide: ITO),
The cathode electrode layer is a thin metal electrode or a conductive oxide film, characterized in that, the OLED display device.
According to claim 6,
the substrate,
an auxiliary electrode formed between the anode electrode;
The OLED display device further comprises a bank covering an edge of the anode electrode and an edge of the auxiliary electrode at both ends of the auxiliary electrode.
According to claim 10,
wherein each of the R sub-pixel, the G sub-pixel and the B sub-pixel is formed on the anode electrode between the banks.

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