KR102520584B1 - Process measurement apparatus and method thereof - Google Patents

Abstract

A process measuring device and method capable of increasing production by reducing working time are provided. The process measurement method is performed by a computing device, receives a plurality of sensed values from a plurality of sensors disposed in a wafer-type temperature sensor, and determines a first temperature value of a first heating zone based on the plurality of sensed values. and determining a first compensation value based on a first difference value corresponding to a difference between the first temperature value and the target value, wherein the first difference value is the first value. When the first difference value is the second value, the first compensation ratio between the first compensation value and the first compensation value is different from the second compensation ratio between the first difference value and the first compensation value.

Description

Process measurement apparatus and method

The present invention relates to process instrumentation apparatus and methods.

When manufacturing a semiconductor device or a display device, various processes such as photography, etching, ashing, ion implantation, thin film deposition, and cleaning are performed. A wafer type temperature sensor may be used to measure the process environment and conditions. A wafer-type temperature sensor includes a plurality of sensors installed on a wafer-type body. By inserting the wafer-type temperature sensor into the process equipment and measuring the temperature distribution within the process equipment, the temperature distribution actually applied to the wafer can be measured/predicted.

A conventional process measurement method using a wafer-type temperature sensor is as follows. A wafer-type temperature sensor is introduced into a bake unit, and a temperature distribution within the bake unit is measured. The wafer-type temperature sensor is moved from the bake unit to a dedicated data output device to output data (i.e., measured temperature distribution). The operator checks the output data and determines the offset of the bake unit. The determined offset is reflected, the wafer-type temperature sensor is drawn into the bake unit again, and the temperature distribution in the bake unit is measured again. The operator repeats the above operations until the temperature distribution within the bake unit meets the desired distribution. In particular, since the offset is arbitrarily calculated by the operator or determined based on experience, a difference in working time inevitably occurs depending on the skill level of the operator.

The problem to be solved by the present invention is to provide a process measuring device and method capable of increasing production by reducing working time.

The tasks of the present invention are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the following description.

One aspect of the process measurement method of the present invention for achieving the above object is performed by a computing device, receives a plurality of sensing values from a plurality of sensors disposed in a wafer-type temperature sensor, and measures the plurality of sensing values. Based on the value, generating a first temperature value of a first heating zone, and determining a first compensation value based on a first difference value corresponding to a difference between the first temperature value and a target value, When the first difference value is a first value, the first compensation ratio between the first difference value and the first compensation value is a ratio between the first difference value and the first compensation value when the first difference value is a second value. It is different from the second compensation ratio.

The first compensation value is a compensation value smaller than the first difference value.

To generate the first temperature value, the wafer-type temperature sensor includes a first sensor and a second sensor corresponding to the first heating zone, and the second sensor is the first sensor in the first heating zone. It may be disposed outside the first sensor, and the first temperature value may be generated based on a first sensed value of the first sensor and a second sensed value of the second sensor. The first temperature value may be a weighted average of the first sensed value and the second sensed value, and a first weight assigned to the first sensed value may be greater than a second weight assigned to the second sensed value. there is. Alternatively, the first temperature value is a weighted average of the first sensing value and the second sensing value, and the second weight given to the second sensing value is the second heating zone adjacent to the first heating zone. It may be influenced by the second temperature value.

The method may further include regenerating the first temperature value of the first heating zone by receiving a plurality of sensing values again from the wafer-type temperature sensor after reflecting the determined first compensation value. Generating a first temperature value of the first heating zone in a state in which the wafer-type temperature sensor is introduced into the substrate processing apparatus, determining the first compensation value, and first temperature value of the first heating zone regenerating proceeds continuously.

When a standard deviation of the plurality of sensing values received for a predetermined period of time is maintained below a predetermined value, the first temperature value may be generated.

The method may further include estimating a temperature gradation based on a plurality of sensing values provided from the wafer-type temperature sensor, and overlapping the temperature gradation with a plurality of heating zones and displaying the temperature gradation.

Another aspect of the process measurement method of the present invention for achieving the above object is performed by a computing device, receiving a plurality of sensing values from a plurality of sensors disposed in a wafer-type temperature sensor, and based on the plurality of sensing values. A first temperature value of the first heating zone and a second temperature value of a second heating zone adjacent to the first heating zone are generated, and a first difference value corresponding to a difference between the first temperature value and the target value It may include determining a first compensation value based on, determining a second compensation value based on a second difference value corresponding to a difference between the second temperature value and a target value, and the first compensation value. .

The first difference value is greater than the second difference value.

When the first difference value is a first value, the first compensation ratio between the first difference value and the first compensation value is a ratio between the first difference value and the first compensation value when the first difference value is a second value. It may be different from the second compensation ratio.

When the first difference value is a first value, the first reflection ratio in which the first compensation value affects the second compensation value is such that when the first difference value is a second value, the first compensation value is the second compensation value. It may be different from the second reflection ratio that affects the compensation value.

The first compensation value may not be affected by the second compensation value.

To generate the first temperature value, the wafer-type temperature sensor includes a first sensor and a second sensor corresponding to the first heating zone, and the second sensor is the first sensor in the first heating zone. disposed outside one sensor, the first temperature value is a weighted average of the first sensed value and the second sensed value, and a first weight given to the first sensed value is given to the second sensor greater than the second weight to be

After reflecting the determined first compensation value and second compensation value, a plurality of sensed values are received again from the wafer-type temperature sensor, and the first temperature value of the first heating zone and the second temperature value of the second heating zone are received. Further comprising regenerating the value, wherein the first temperature value and the second temperature value are generated in a state in which the wafer-type temperature sensor is introduced into the substrate processing apparatus, and the first compensation value and the second compensation value Determining and regenerating the first temperature value and the second temperature value proceed continuously.

Another aspect of the process measurement method of the present invention for achieving the above object is performed by a computing device, receives a plurality of sensing values from a plurality of sensors disposed in a wafer-type temperature sensor, and calculates the plurality of sensing values. Based on this, a temperature gradation is estimated, the estimated temperature gradation is overlapped with a plurality of heating zones and displayed, and based on the plurality of sensing values, a temperature value of each of the plurality of heating zones is calculated and displayed. may include

The method may further include determining and displaying a compensation value for each of the plurality of heating zones based on a plurality of difference values corresponding to a difference between a temperature value of each of the plurality of heating zones and a target value.

Accumulated compensation values of each of the plurality of heating zones may be displayed together.

A manual input column in which a compensation value can be additionally input by an operator is further included.

Details of other embodiments are included in the detailed description and drawings.

1 shows an exemplary substrate processing apparatus to which a process metrology method according to some embodiments of the present invention is applied.
FIG. 2A is a plan view illustrating a heater installed in the substrate support unit of FIG. 1 .
FIG. 2B is a diagram for explaining an exemplary configuration of a heating zone (eg, Z6) of FIG. 2A.
FIG. 3 is a block diagram illustrating a process measurement module of FIG. 1 .
4 is a flowchart illustrating a process measurement method according to some embodiments of the present invention.
FIG. 5 is a flowchart for explaining an example of S320 (temperature distribution analysis and compensation value determination step) of FIG. 4 .
6 is a diagram for explaining a relationship between sensors of a wafer-type temperature sensor and a heating zone of a substrate processing apparatus.
FIG. 7 is a diagram for explaining step S326 of FIG. 5 .
8 is a flowchart for explaining another example of S320 (temperature distribution analysis and compensation value determination step) of FIG. 4 .
9 is a GUI (Graphic User Interface) for describing software used in a process measurement method according to some embodiments of the present invention.
FIG. 10 is a diagram for explaining the temperature distribution viewer of FIG. 9 .
FIG. 11 is a diagram for explaining the data table of FIG. 9 .

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Advantages and features of the present invention, and methods for achieving them, will become clear with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various different forms, only the present embodiments make the disclosure of the present invention complete, and the common knowledge in the art to which the present invention belongs It is provided to fully inform the holder of the scope of the invention, and the present invention is only defined by the scope of the claims. Like reference numbers designate like elements throughout the specification.

The spatially relative terms "below", "beneath", "lower", "above", "upper", etc. It can be used to easily describe the correlation between elements or components and other elements or components. Spatially relative terms should be understood as encompassing different orientations of elements in use or operation in addition to the orientations shown in the figures. For example, when flipping elements shown in the figures, elements described as “below” or “beneath” other elements may be placed “above” the other elements. Thus, the exemplary term “below” may include directions of both below and above. Elements may also be oriented in other orientations, and thus spatially relative terms may be interpreted according to orientation.

Although first, second, etc. are used to describe various elements, components and/or sections, it is needless to say that these elements, components and/or sections are not limited by these terms. These terms are only used to distinguish one element, component or section from another element, component or section. Accordingly, it goes without saying that the first element, first element, or first section referred to below may also be a second element, second element, or second section within the spirit of the present invention.

Terminology used herein is for describing the embodiments and is not intended to limit the present invention. In this specification, singular forms also include plural forms unless specifically stated otherwise in a phrase. As used herein, "comprises" and/or "comprising" means that a stated component, step, operation, and/or element is present in the presence of one or more other components, steps, operations, and/or elements. or do not rule out additions.

Unless otherwise defined, all terms (including technical and scientific terms) used in this specification may be used in a meaning commonly understood by those of ordinary skill in the art to which the present invention belongs. In addition, terms defined in commonly used dictionaries are not interpreted ideally or excessively unless explicitly specifically defined.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description with reference to the accompanying drawings, the same or corresponding components regardless of reference numerals are given the same reference numerals, Description is omitted.

1 shows an exemplary substrate processing apparatus to which a process metrology method according to some embodiments of the present invention is applied. FIG. 2A is a plan view illustrating a heater installed in the substrate support unit of FIG. 1 , and FIG. 2B is a diagram illustrating an exemplary configuration of a heating zone (eg, Z6) of FIG. 2A . FIG. 3 is a block diagram illustrating a process measurement module of FIG. 1 .

First, in FIG. 1 , a bake unit is shown as an example of the substrate processing apparatus 100 . The bake unit is a device for heating a substrate to a process temperature or higher, and may heat the entire area of the substrate to a uniform temperature or adjust the temperature of each area of the substrate according to an operator.

The substrate processing apparatus 100 may include a chamber 110 , an entrance 112 , a substrate support unit 120 , and the like.

The chamber 110 provides a space for heating a substrate therein. During the baking process, the inside of the chamber 110 may be in a normal pressure or reduced pressure atmosphere. An entrance 112 is installed at one side of the chamber 110 , and a wafer for a baking process may be put in or a wafer after a baking process may be taken out through the entrance 112 . Although not separately shown, a peripheral hole for introducing air current (eg, inert gas or air) into the chamber 110 may be formed on a sidewall of the chamber 110 .

A substrate support unit 120 is disposed in the chamber 110 , and a wafer is seated on the upper surface of the substrate support unit 120 and subjected to heat treatment.

As shown in FIG. 2A, the substrate support unit 120 may be divided into a plurality of heating zones (Z1 to Z15), and at least one heating member is provided in each heating zone (Z1 to Z15). installed The heating member may be, for example, a thermoelectric element or a hot wire. The plurality of heating zones Z1 to Z15 are located on the same plane of the substrate support unit 120 . In addition, the plurality of heating zones (Z1 ~ Z15) can be independently temperature-controlled. As shown in FIG. 2B , hot wires may be arranged/arranged in a predetermined manner in the heating zone (eg, Z6).

For example, the heating zone Z1 is located at the very center of the substrate support unit 120, and two heating zones Z2 and Z3 are located to surround the heating zone Z1. In addition, four heating zones Z4, Z5, Z6, and Z7 are positioned to surround the two heating zones Z2 and Z3. Here, in each heating zone (eg Z2), two heating zones (eg Z4 and Z5) may be located. In addition, eight heating zones (Z8 to Z15) are positioned to surround the two heating zones (Z4, Z5, Z6, Z7). Here, each heating zone (eg, Z4) may include two heating zones (eg, Z8 and Z9).

In FIG. 2A, it has been described that the heating zones Z1 to Z15 are arranged in four layers (ie, Z1, Z2 to Z3, Z4 to Z7, and Z8 to Z15) by way of example, but it is not limited thereto. That is, the heating zone may be arranged in 3 layers or 5 layers. In addition, in FIG. 2A, it has been described that there are two heating zones (eg, Z8 and Z9) corresponding to the outside of each heating zone (eg, Z4), but it is not limited thereto. That is, there may be three or more heating zones corresponding to the outside of each heating zone.

The plurality of heating zones Z1 to Z15 are illustrated as being divided into 15, but are not limited thereto. For example, it may be 16 or more.

In addition, although not separately illustrated, a plurality of pin holes may be installed on a seating surface (a surface in contact with the substrate) of the substrate support unit 120 , and lift pins movable in a vertical direction may be provided in the pin holes. The lift pin lifts the substrate or places the substrate on the seating surface of the substrate support unit 120 .

Meanwhile, the substrate processing apparatus 100 is not limited to a bake unit, and may be any apparatus that measures a temperature distribution using a wafer-type temperature sensor.

Also, depending on the embodiment, a cooling plate for cooling the wafer may be further installed in the bake unit. A cooling means such as cooling water or a thermoelectric element is installed inside the cooling plate to cool the wafer to a temperature equal to or close to room temperature.

The substrate processing apparatus 100 may be connected to the process measurement module 200 . Referring to FIG. 3, the process measurement module 200 is a computing device and may include a display 210, a processor 220, a communication module 230, a memory 240, a bus 250, an input/output interface, and the like. can

By means of the bus 250, various components such as the display 210, the processor 220, the communication module 230, and the memory 240 can connect and communicate with each other (ie control message transfer and data transfer). .

The processor 220 may include one or more of a central processing unit, an application processor, or a communication processor (CP). The processor 220 may, for example, execute calculations or data processing related to control and/or communication of at least one other element of the computing device.

The display 210 may be, for example, a liquid crystal display (LCD), a light emitting diode (LED) display, an organic light emitting diode (OLED) display, a microelectromechanical systems (MEMS) display, or an electronic paper display. can include The display 210 may display, for example, various types of content (eg, text, image, video, icon, and/or symbol) to the user. The display 210 may include a touch screen, and may receive, for example, a touch, gesture, proximity, or hovering input using an electronic pen or a part of the user's body.

The memory 240 may include volatile memory (eg, DRAM, SRAM, or SDRAM) and/or non-volatile memory (eg, one time programmable ROM (OTPROM), PROM, EPROM, EEPROM, mask ROM, flash ROM, flash memory, PRAM, RRAM, MRAM, hard drive, or solid state drive (SSD)). The memory 240 may include internal memory and/or external memory. Memory 240 may store, for example, instructions or data related to at least one other component of the computing device. Also, memory 240 may store software and/or programs.

The memory 240 stores instructions for performing a process measurement method to be described with reference to FIGS. 4 to 11 .

For example, the memory 240 receives a plurality of sensing values from a plurality of sensors disposed in the wafer-type temperature sensor, and generates a first temperature value of a first heating zone based on the plurality of sensing values, , instructions for determining a first compensation value based on a first difference value corresponding to a difference between the first temperature value and a target value. Here, the first compensation ratio between the first difference value and the first compensation value when the first difference value is a first value is the first difference value and the first compensation value when the first difference value is a second value. It is controlled differently from the second compensation ratio between

Alternatively, the memory 240 receives a plurality of sensing values from a plurality of sensors disposed in the wafer-type temperature sensor, and based on the plurality of sensing values, the first temperature value of the first heating zone and the first heating A second temperature value of a second heating zone adjacent to the zone is generated, a first compensation value is determined based on a first difference value corresponding to a difference between the first temperature value and a target value, and the second temperature value and It may include instructions for determining a second compensation value based on a second difference value corresponding to a difference between target values and the first compensation value.

Alternatively, the memory 240 receives a plurality of sensing values from a plurality of sensors disposed in the wafer-type temperature sensor, estimates a temperature gradation based on the plurality of sensing values, and calculates the estimated temperature gradation. It may include instructions for overlapping with a plurality of heating zones and displaying, calculating and displaying temperature values of each of the plurality of heating zones based on the plurality of sensing values.

Also, the communication module 230 may communicate with the substrate processing apparatus 100 through a wired and/or wireless method. Wireless communication is, for example, LTE, LTE-A (LTE Advance), CDMA (code division multiple access), WCDMA (wideband CDMA), UMTS (universal mobile telecommunications system), WiBro (Wireless Broadband), or GSM (Global System for Mobile Communications) may include cellular communication using at least one of the like. Alternatively, wireless communication may include wireless fidelity (WiFi), light fidelity (LiFi), Bluetooth, Bluetooth Low Energy (BLE), Zigbee, near field communication (NFC), magnetic secure transmission, radio frequency ( RF), or a body area network (BAN). Alternatively, wireless communication may include GNSS. The GNSS may be, for example, a Global Positioning System (GPS), a Global Navigation Satellite System (Glonass), a Beidou Navigation Satellite System (hereinafter “Beidou”) or Galileo, the European global satellite-based navigation system. Wired communications include, for example, USB (universal serial bus), HDMI (high definition multimedia interface), RS-232 (recommended standard 232), power line communications, or POTS (plain old telephone service), computer networks such as LAN or WAN) and the like.

4 is a flowchart illustrating a process measurement method according to some embodiments of the present invention.

Referring to FIG. 4 , the wafer-type temperature sensor is conveyed into the substrate processing apparatus (refer to 100 in FIG. 1) (S310).

Subsequently, the temperature distribution in the substrate processing apparatus 100 is measured using a wafer-type temperature sensor. In addition, while the wafer-type temperature sensor is drawn into the substrate processing apparatus 100 (that is, without moving the wafer-type temperature sensor to a separate dedicated data output device), the temperature distribution of the substrate processing apparatus 100 is analyzed, , a compensation value is determined (S320). A method of analyzing the temperature distribution and determining the compensation value will be described later in detail using FIGS. 5 to 8 .

Subsequently, after reflecting the determined compensation value, the temperature distribution in the substrate processing apparatus 100 is measured again using the wafer-type temperature sensor. Again, it is checked whether the measured temperature distribution is suitable for the target temperature distribution (S330). If it is not suitable for the target temperature distribution, it returns to step S320. If it is suitable for the target temperature distribution, it ends.

As described above, data may be exchanged with each other while the process measurement module 200 and the substrate processing apparatus 100 are wired and/or wirelessly connected. There is no need to move the wafer-type temperature sensor from the substrate processing apparatus 100 to a dedicated data output device to read the temperature distribution measured by the wafer-type temperature sensor. That is, in a state where the wafer-type temperature sensor is located within the substrate processing apparatus 100. Temperature distribution analysis and compensation value determination (S320), temperature distribution re-measurement after reflecting the compensation value and suitability determination (S330) are continuously performed.

FIG. 5 is a flowchart for explaining an example of S320 (temperature distribution analysis and compensation value determination step) of FIG. 4 . 6 is a diagram for explaining a relationship between sensors of a wafer-type temperature sensor and a heating zone of a substrate processing apparatus. FIG. 7 is a diagram for explaining step S326 of FIG. 5 .

First, referring to FIG. 5 , a plurality of sensing values are received from a plurality of sensors disposed in the wafer type temperature sensor (S322).

Specifically, as shown in FIG. 6, a plurality of sensors (for example, 61, 62, 63, 52, and 73) disposed in the wafer-type temperature sensor correspond to a plurality of heating zones Z5, Z6, and Z7. It can be. For example, some sensors 61, 62, and 63 correspond to a heating zone Z6, another sensor 52 corresponds to another heating zone Z5, and another sensor 73 corresponds to another heating zone. It may correspond to zone Z7. In FIG. 6, three sensors 61, 62, and 63 are shown to correspond to one heating zone (eg, Z6) for convenience of description, but it is not limited thereto.

The process measurement module 200 may receive sensing values measured by the sensors (eg, 61, 62, 63, 52, and 73) in a wired and/or wireless manner. In a state where the wafer-type temperature sensor is located in the substrate processing apparatus 100, the process measurement module 200 may receive sensing values.

The process measurement module 200 may receive sensing values in real time. For example, the process measurement module 200 may continuously or continuously receive sensing values. For example, the process measurement module 200 may continuously receive sensing values 60 times for 3 minutes.

Subsequently, based on the plurality of sensed values provided, a first temperature value of the first heating zone (eg, Z6 in FIG. 6 ) is generated (S324).

Specifically, generating the first temperature value may be performed after a standard deviation of the plurality of sensed values received for a predetermined period of time is maintained below a predetermined value.

The sensor values are continuously provided, and the standard deviation of the provided sensor values is calculated. Here, if the standard deviation is maintained below a predetermined value during a predetermined period (eg, 60 sampling periods), a stable condition is determined. A standard deviation of a plurality of sensor values provided at the time of the x-th sampling is referred to as an “x-th standard deviation”. For example, the 1st standard deviation can be 0.3, the 2nd standard deviation can be 0.25, and the 20th standard deviation can be 0.03. The 21st standard deviation can drop below 0.03. If all of the 21st standard deviation to the 80th standard deviation remain less than 0.03 (that is, if the standard deviation remains less than 0.03 for 60 sampling periods), it can be determined as a stable state. In a stable state, a first temperature value is generated.

For example, the wafer-type temperature sensor includes a first sensor (61 in FIG. 6) and a second sensor (62 and 63 in FIG. 6) corresponding to a first heating zone (eg, Z6 in FIG. 6), , The second sensors 62 and 63 may be disposed outside the first sensor 61 in the first heating zone Z6.

The first temperature value of the first heating zone Z6 may be generated based on the first sensed value of the first sensor 61 and the second sensed value of the second sensors 62 and 63 .

For example, the first temperature value may be a weighted average of the first sensing values and the second sensing values, and a first weight assigned to the first sensing values may be greater than a second weight assigned to the second sensing values. In addition, the second weight given to the second sensing value may be influenced by the second temperature value of the second heating zone (eg, Z5) adjacent to the first heating zone Z6.

The first sensor 61 located in the center of the first heating zone Z6 is located in the surrounding heating zones (for example, Z5 and Z6) compared to the other sensors 62 and 63 of the first heating zone Z6. are less affected by In addition, since the first temperature value is a representative value representing the first heating zone Z6, a large weight may be given to the first sensed value of the first sensor 61.

On the other hand, the second sensors 62 and 63 disposed outside the first heating zone Z6 affect not only the first heating zone Z6 itself, but also the surrounding heating zones (eg, Z5 and Z7). is also affected by Accordingly, when the temperature of the surrounding heating zone (eg, Z5) is high, the second sensing value of the second sensor (eg, 62) may also increase. Accordingly, the second weight given to the second sensed value is influenced by the temperature value of the surrounding heating zone.

Subsequently, a first compensation value is determined based on the first difference value corresponding to the difference between the first temperature value and the target value (S326).

Specifically, a first difference value corresponding to a difference between the first temperature value and the target value TG is calculated. For example, when the first temperature value is 100°C and the target value TG is 110°C, the first difference value is 10°C.

A first compensation value may be determined based on the first difference value (ie, 10°C).

Here, the compensation value may be a parameter value adjusted for each heating zone Z1 to Z15 for independent heat treatment in each heating zone Z1 to Z15. For example, if the temperature of each heating zone Z1 to Z15 is adjusted by adjusting the amount of current provided to each heating zone Z1 to Z15, the compensation value may be a change in the amount of current. For example, a current amount of a heating zone may be 1A and a compensation value may be 0.1A. In this case, the current amount of the heating zone may be changed to 1.1A.

Meanwhile, in some embodiments of the present invention, the first compensation value may be determined as a compensated value smaller than the first difference value. For example, even if the first difference value is 10°C and the compensation value generally known (or calculated by a calculation formula) is 0.2A to increase 10°C, the first compensation value may be determined to be 0.1A instead of 0.2A. there is.

Since there are a plurality of heating zones Z1 to Z15 adjacent to each other in the substrate support unit 120, the temperature of each heating zone Z1 to Z15 is not determined only by the amount of current supplied to each heating zone Z1 to Z15. , It is greatly affected by the temperature of the surrounding heating zones (Z1 to Z15). Due to the influence of the surrounding heating zones (Z1 to Z15), if the compensation value is determined to be 0.2A to increase the temperature by 10°C, it can be increased by 15°C instead of 10°C. Therefore, in the process measurement method according to some embodiments of the present invention, the first compensation value is set to a compensated value smaller than the first difference value (eg, 10 ° C) (eg, a value that can be raised by 5 ° C). can decide

Subsequently, after reflecting the determined first compensation value, the first temperature value of the first heating zone Z6 is regenerated using the wafer-type temperature sensor. If the regenerated first temperature value does not conform to the target value, the first compensation value is recalculated, and the recalculated first compensation value is reflected. repeat this process.

Here, a method of determining the compensation value will be described in more detail with reference to FIG. 7 . The x-axis of FIG. 7 represents time, and the y-axis represents the temperature value of the heating zone (eg, Z6). Each of STEP1~STEP4 means a tuning step.

In the first tuning step (STEP1), a difference value D1 corresponding to the difference between the temperature value of the heating zone Z6 and the target value TG is calculated. The compensation value C1 is determined as a value compensated for smaller than the difference value D1.

In the second tuning step (STEP2), a difference value D2 corresponding to the difference between the target value TG and the changed temperature value of the heating zone Z6 after reflecting the compensation value C1 is calculated. After reflecting the compensation value C1, the changed temperature value of the heating zone Z6 may be affected by the surrounding heating zones Z5 and Z7. That is, the temperature value of the heating zone Z6 changed after reflecting the compensation value C1 may be higher or lower than shown. The compensation value C2 is determined as a value compensated smaller than the difference value D2.

In the third tuning step (STEP3), after reflecting the compensation value (C2), a difference value (D3) corresponding to the difference between the changed temperature value of the heating zone (Z6) and the target value (TG) is calculated. After reflecting the compensation value C2, the changed temperature value of the heating zone Z6 may be affected by the surrounding heating zones Z5 and Z7. That is, the temperature value of the heating zone Z6 changed after reflecting the compensation value C2 may be higher or lower than shown. The compensation value C3 is determined as a value that is compensated smaller than the difference value D3.

In the fourth tuning step (STEP4), a difference value D4 corresponding to a difference between the target value TG and the changed temperature value of the heating zone Z6 after reflecting the compensation value C3 is calculated. After reflecting the compensation value C3, the changed temperature value of the heating zone Z6 may be affected by the surrounding heating zones Z5 and Z7. That is, the temperature value of the heating zone Z6 changed after reflecting the compensation value C3 may be higher or lower than shown. A compensation value is determined as a value that is compensated smaller than the difference value D4.

Meanwhile, the compensation ratio (=C1/D1) between the difference value D1 and the compensation value C1 in STEP1 is, for example, 50%, and the compensation between the difference value D2 and the compensation value C2 in STEP2 The ratio (=C2/D2) may be, for example, 30%, and the compensation ratio (=C3/D3) between the difference value D3 and the compensation value C3 in STEP3 may be, for example, 20%. That is, the compensation ratio may vary depending on the difference values D1 , D2 , and D3 . For example, the larger the difference values D1 , D2 , and D3 , the higher the compensation ratio, and the smaller the difference values D1 , D2 , and D3 , the lower the compensation ratio.

In this way, by varying the compensation ratios C1/D1, C2/D2, and C3/D3 according to the difference values D1, D2, and D3, the temperature value is more carefully adjusted to approach the target value. If the compensation ratios (C1/D1, C2/D2, C3/D3) are adjusted in this way, the number of tunings (STEP1 to STEP4) may increase, but more precise tuning is possible.

8 is a flowchart for explaining another example of S320 (temperature distribution analysis and compensation value determination step) of FIG. 4 . For convenience of description, the description will focus on differences from those described with reference to FIGS. 4 to 7 .

Referring to FIG. 8 , a plurality of sensing values are received from a plurality of sensors disposed in the wafer type temperature sensor (S322).

Then, based on the plurality of sensing values, the first temperature value of the first heating zone (eg, see Z6 in FIG. 6 ) and the second heating zone adjacent to the first heating zone (eg, see Z6 in FIG. 6 ) A second temperature value of (refer to Z5) is generated (S325).

As described above, generating the first temperature value/second temperature value may be performed after a standard deviation of the plurality of sensed values received for a preset period of time is maintained below a preset value.

As described above, the first temperature value/second temperature value may be generated based on sensing values of a plurality of sensors corresponding to each heating zone. A sensing value of a sensor positioned at the center of each heating zone has a high weight, and a weight of a sensing value of a sensor positioned outside each heating zone may change according to an influence of a surrounding heating zone.

Subsequently, a first compensation value is determined based on the first difference value corresponding to the difference between the first temperature value and the target value (S327). Subsequently, a second compensation value is determined based on the second difference value corresponding to the difference between the second temperature value and the target value and the first compensation value (S327).

Specifically, the first difference value is greater than the second difference value. Since the first difference value is greater than the second difference value, the first compensation value is determined before the second compensation value (without considering the second compensation value), and the first compensation value is also considered when determining the second compensation value. decide by That is, the first compensation value is not affected by the second compensation value.

As described above, when determining the first compensation value of the first heating zone Z6, the compensation ratio may vary depending on how much the difference value (refer to D1, D2, and D3 in FIG. 7) is. For example, the larger the difference values D1 , D2 , and D3 , the higher the compensation ratio, and the smaller the difference values D1 , D2 , and D3 , the lower the compensation ratio.

In addition, when determining the second compensation value of the second heating zone Z5, the first compensation value depends on the difference value (refer to D1, D2, and D3 in FIG. 7) in the first heating zone Z6. A reflection ratio affecting the second compensation value may be changed. For example, the larger the difference values D1 , D2 , and D3 , the higher the reflection ratio, and the smaller the difference values D1 , D2 , and D3 , the lower the reflection ratio.

For example, if the difference value of the first heating zone Z6 is 20°C and the compensation ratio is 50%, the compensation value of the first heating zone Z6 can be determined as a value that can be increased by 10°C. . Here, when the difference value of the second heating zone (Z5) is 18 ℃, considering the compensation ratio of 50% and the reflection ratio of 50%, the compensation value of the second heating zone (Z5) is a value that can be raised by 9 ℃ Rather, it can be determined as a value that can be raised by less than 9 ° C (for example, a value that can be raised by 7 ° C) (considering the reflection ratio).

Alternatively, when the difference value of the first heating zone Z6 is 10°C and the compensation ratio is 40%, the compensation value of the first heating zone Z6 may be determined as a value that can be increased by 4°C. Here, when the difference value of the second heating zone Z5 is 8°C, considering the compensation rate of 40% and the reflection rate of 40%, the compensation value of the second heating zone Z5 is a value that can be raised by 3.2°C. Instead, it can be determined as a value that can be raised by less than 3.2°C (for example, a value that can be raised by 2.4°C) (considering the reflection ratio).

Subsequently, after reflecting the determined first compensation value and second compensation value, a plurality of sensing values are received again from the wafer-type temperature sensor, and the first temperature value of the first heating zone Z6 and the second heating zone Z5 are measured. The second temperature value is regenerated. If the regenerated first temperature value/second temperature value does not conform to the target value, the first compensation value/second compensation value is recalculated, and the recalculated first compensation value/second compensation value is reflected. repeat this process.

Generating a first temperature value and a second temperature value in a state in which the wafer-type temperature sensor is drawn into the substrate processing apparatus 100 (S325), and determining a first compensation value and a second compensation value (S327). , S328) and regenerating the first temperature value and the second temperature value are continuously performed.

9 is a GUI (Graphic User Interface) for describing software used in a process measurement method according to some embodiments of the present invention. FIG. 10 is a diagram for explaining the temperature distribution viewer of FIG. 9 . FIG. 11 is a diagram for explaining the data table of FIG. 9 .

First of all, referring to FIG. 9, the GUI 20 includes a temperature distribution viewer 21, a data table 22, a refresh button 23, an apply button 24, an automatic tuning button 25, and an update count input field 26. , a specification setting input column 27, and the like.

The temperature distribution viewer 21 overlaps and displays a temperature gradation (or temperature map) and a plurality of heating zones. Since the operator can simultaneously check the temperature gradation and the plurality of heating zones through the temperature distribution viewer 21, the heating zone out of the target value can be quickly determined and the process of changing the temperature distribution can be quickly recognized. If only the temperature gradient is displayed, the operator cannot clearly know the corresponding heating zone. The heating zone shown in the temperature distribution viewer 21 may be displayed in the form of an area as shown in FIG. 10 or may be displayed in the form of an arrangement of heating wires/heating elements as shown in FIG. 2B.

The process measurement module 200 receives a plurality of sensed values from a plurality of sensors disposed in the wafer type temperature sensor, and estimates a temperature gradation on the wafer based on the plurality of sensed values. The process measurement module 200 overlaps the estimated temperature gradation with a plurality of heating zones and displays them.

Here, referring to FIG. 10 , a temperature gradation and a heating zone are simultaneously displayed in the first area 21a of the temperature distribution viewer 21, and the temperature gradation is displayed in color, pattern, or the like. In the second area 21b, the temperature indicated by the color and pattern of the temperature gradation is indicated.

In addition, the process measurement module 200 may calculate the temperature value of each of the plurality of heating zones based on the plurality of sensed values provided and display the calculated temperature value in the form of a data table 22 .

Here, referring to FIG. 11 , the data table 22 may include a first part 22a to a fourth part 22d. Specifically, the first part 22a represents the temperature value of each of the plurality of heating zones (zone1 to zone4), and the second part 22b represents the difference value (that is, the temperature of each of the plurality of heating zones zone1 to zone4). value and the target value). The third part 22c represents the compensation value of each of the plurality of heating zones (zone1 to zone4). In the third part 22c, the compensation value may be displayed in the form of a current value or as a temperature corresponding to the current value. In addition, the fourth part 22d represents the accumulated compensation value of each of the plurality of heating zones zone1 to zone4.

Referring back to FIG. 9 , when the user clicks the refresh button 23, the data table 22 is refreshed.

When the user clicks the apply button 24, the new compensation value is applied.

When the user clicks the automatic tuning button 25, a plurality of tuning steps (eg, STEP1 to STEP4 in FIG. 7) are continuously performed within a preset range. For example, if the user inputs 3 in the update count input box 26, the tuning step is continuously performed up to 3 times (ie, STEP1 to STEP3 are continuously performed).

In addition, the user may input a standard standard deviation for determining a stable state in the specification setting input field 27 . That is, if the user enters, for example, 0.03 in the specification setting input box 27, and the calculated standard deviation is maintained below 0.03 for a predetermined period (eg, 60 sampling periods), a stable condition (stable condition) ) can be judged.

In addition, although not separately shown, a manual input field in which a compensation value can be additionally input by an operator may be further displayed. Through such manual input, the operator can reflect experience and proficiency and finish tuning more quickly.

Although the embodiments of the present invention have been described with reference to the above and accompanying drawings, those skilled in the art to which the present invention pertains can implement the present invention in other specific forms without changing the technical spirit or essential features. You will understand that there is Therefore, the embodiments described above should be understood as illustrative in all respects and not limiting.

100: substrate processing device 110: chamber
112: entrance 120: substrate support unit
200: process measurement module 210: display
220: processor 230: communication module
240: memory 250: bus
Z1~Z15: Heating zone

Claims (20)

In the process measurement method performed by a computing device,
Receiving a plurality of sensing values from a plurality of sensors disposed in the wafer-type temperature sensor,
Based on the plurality of sensing values, a first temperature value of a first heating zone is generated,
Determining a first compensation value based on a first difference value corresponding to a difference between the first temperature value and a target value,
When the first difference value is a first value, a first compensation ratio between the first difference value and the first compensation value,
different from a second compensation ratio between the first difference value and the first compensation value when the first difference value is a second value. According to claim 1,
The first compensation value is a value compensated for smaller than the first difference value, the process measurement method. The method of claim 1, wherein generating the first temperature value comprises:
The wafer-type temperature sensor includes a first sensor and a second sensor corresponding to the first heating zone, the second sensor being disposed outside the first sensor in the first heating zone,
The first temperature value is generated based on a first sensed value of the first sensor and a second sensed value of the second sensor. Process instrumentation method. According to claim 3,
The first temperature value is a weighted average of the first sensed value and the second sensed value,
A first weight given to the first sensed value is greater than a second weight given to the second sensed value. According to claim 3,
The first temperature value is a weighted average of the first sensed value and the second sensed value,
A second weight given to the second sensing value is influenced by a second temperature value of a second heating zone adjacent to the first heating zone. According to claim 1,
After reflecting the determined first compensation value, further comprising receiving a plurality of sensing values from the wafer-type temperature sensor and regenerating the first temperature value of the first heating zone. According to claim 6,
Generating a first temperature value of the first heating zone in a state in which the wafer-type temperature sensor is introduced into the substrate processing apparatus, determining the first compensation value, and first temperature value of the first heating zone A method of measuring a process in which the regeneration of is carried out continuously. According to claim 1,
When a standard deviation of the plurality of sensing values provided for a predetermined period of time is maintained below a predetermined value, the first temperature value is generated. According to claim 1,
The process measurement method further comprising estimating a temperature gradation based on a plurality of sensing values provided from the wafer-type temperature sensor and displaying the temperature gradation by overlapping a plurality of heating zones. In the process measurement method performed by a computing device,
Receiving a plurality of sensing values from a plurality of sensors disposed in the wafer-type temperature sensor,
Based on the plurality of sensing values, a first temperature value of a first heating zone and a second temperature value of a second heating zone adjacent to the first heating zone are generated;
Determine a first compensation value based on a first difference value corresponding to a difference between the first temperature value and a target value;
And determining a second compensation value based on a second difference value corresponding to a difference between the second temperature value and the target value and the first compensation value. According to claim 10,
wherein the first difference value is greater than the second difference value. According to claim 10,
When the first difference value is a first value, a first compensation ratio between the first difference value and the first compensation value,
different from a second compensation ratio between the first difference value and the first compensation value when the first difference value is a second value. According to claim 10,
When the first difference value is a first value, the first reflection ratio in which the first compensation value affects the second compensation value,
When the first difference value is a second value, the first compensation value is different from a second reflection ratio affecting the second compensation value. According to claim 10,
The first compensation value is not affected by the second compensation value. 11. The method of claim 10, wherein generating the first temperature value comprises:
The wafer-type temperature sensor includes a first sensor and a second sensor corresponding to the first heating zone, the second sensor being disposed outside the first sensor in the first heating zone,
The first temperature value is generated based on a first sensed value of the first sensor and a second sensed value of the second sensor,
The first temperature value is a weighted average of the first sensed value and the second sensed value, and a first weight assigned to the first sensed value is greater than a second weight assigned to the second sensor. instrumentation method. According to claim 10,
After reflecting the determined first compensation value and second compensation value, a plurality of sensed values are received again from the wafer-type temperature sensor, and the first temperature value of the first heating zone and the second temperature value of the second heating zone are received. Further comprising regenerating the value,
Generating the first temperature value and the second temperature value, determining the first compensation value and the second compensation value, in a state in which the wafer-type temperature sensor is introduced into the substrate processing apparatus, and the first temperature value and regenerating the second temperature value proceeds continuously. In the process measurement method performed by a computing device,
Receiving a plurality of sensing values from a plurality of sensors disposed in the wafer-type temperature sensor,
Estimating a temperature gradation based on the plurality of sensing values,
The estimated temperature gradation is overlapped with a plurality of heating zones and displayed;
Based on the plurality of sensing values, the process measurement method comprising calculating and displaying the temperature value of each of the plurality of heating zones. According to claim 17,
The process measurement method further comprising determining and displaying a compensation value for each of the plurality of heating zones based on the plurality of difference values corresponding to the difference between the temperature value and the target value of each of the plurality of heating zones. According to claim 18,
The process measurement method further comprising displaying the accumulated compensation values of each of the plurality of heating zones together. According to claim 18,
Further comprising displaying a manual input field in which a compensation value can be additionally input by an operator, the process measurement method.

Images