KR102493317B1 - X-ray detector - Google Patents

Abstract

The present invention relates to an X-ray image sensor. The X-ray image sensing element may include a first region including a first pixel region including a first photodiode and a thin film transistor, and a second region disposed adjacent to an outer circumferential surface of the first region and including only a second photodiode. A second region including a pixel region is included, wherein an area of the second photodiode is larger than an area of the first photodiode.

Description

X-ray image detector {X-RAY DETECTOR}

The present invention relates to an X-ray image sensor. Specifically, it relates to an X-ray image sensing element in which a dummy pixel region including a photodiode is formed in a dummy region adjacent to an array region.

Currently, a diagnostic X-ray device, which is widely used for medical purposes, is photographed using an X-ray detection film, and a predetermined film printing time is required to know the result.

However, in recent years, thanks to the development of semiconductor technology, a digital X-ray detector (hereinafter referred to as "X-ray image sensing device") using a thin film transistor has been researched/developed.

The X-ray image sensing device uses a thin film transistor as a switching device, and has an advantage of displaying an X-ray image on a screen in real time as soon as an X-ray is captured, thereby diagnosing a result.

Hereinafter, the configuration and operation of the X-ray image sensing element will be described.

1 is a plan view showing a schematic configuration of a conventional X-ray image sensing device. FIG. 2 is a cross-sectional view showing a cross section taken along the line A-A' of FIG. 1;

Referring to FIGS. 1 and 2 , the X-ray image sensing device includes a substrate 10 and a scintillation layer 20 formed on the substrate 10 .

The substrate 10 includes an array area 11 for sensing an image and a dummy area 12 surrounding an outer circumferential surface of the display area 11 . The display area 11 includes a plurality of unit pixel areas, and a readout integrated circuit 30 (ROIC) for receiving photocurrents output from the plurality of unit pixel areas is provided on one side.

The scintillation layer 20 is disposed on the substrate 10 and has a constant thickness on the display area 11 . However, a dummy region 12 in which the thickness of the scintillation layer 20 is non-uniform is formed on the outer circumferential surface of the display region 11 for reasons of processing. This dummy area 12 is not used as a pixel area and is not connected to the readout integrated circuit 30 because it is difficult to obtain normal image information because a constant light source is not incident thereon.

This dummy area has a problem in that the size of the X-ray image sensing element is unnecessarily increased because it exists as an surplus area.

A technical problem to be solved by the present invention is to provide an X-ray image sensing device capable of generating additional power capable of charging a battery in a dummy area by forming a dummy pixel area including a photodiode in a dummy area adjacent to an array area. is to do

The objects of the present invention are not limited to the above-mentioned objects, and other objects and advantages of the present invention not mentioned above can be understood by the following description and will be more clearly understood by the examples of the present invention. It will also be readily apparent that the objects and advantages of the present invention may be realized by means of the instrumentalities and combinations indicated in the claims.

One aspect according to the X-ray image sensing device of the present invention for achieving the above technical problem is a first region including a first pixel region including a first photodiode and a thin film transistor, and a A second region disposed adjacent to an outer circumferential surface and including a second pixel region including only a second photodiode, wherein an area of the second photodiode is larger than an area of the first photodiode.

In addition, the first photodiode has one end connected to a bias line and the other end connected to the thin film transistor, and the thin film transistor has a source terminal connected to the first photodiode and a first data line. It may include a drain terminal and a gate terminal connected to the gate line.

The first data wire and the gate wire may define the first pixel area, and the second data wire and the gate wire disposed parallel to the first data wire may define the second pixel area. there is.

In addition, the second photodiode may be disposed to be spaced apart from the gate wire and may be electrically non-conductive.

In addition, a current output from a lead-out unit receiving a signal output from a first data wire connected to the thin film transistor and a second data wire disposed parallel to the first data wire connected to the second photodiode A receiving battery unit may be further included.

The battery unit may provide power to a gate integrated circuit that transmits a signal to a gate line crossing the first and second pixel regions.

Another aspect according to the X-ray image sensing device of the present invention for achieving the above technical problem is a substrate on which first and second regions are defined, a first pixel region disposed in the first region, and disposed in the second region and a second pixel region, wherein the first pixel region includes an active pattern formed on the substrate, a gate line formed on the active pattern, an interlayer insulating layer covering upper surfaces of the active pattern and the gate line, and the gate line. A first data line formed on one side of the wiring and in contact with the upper surface of the active pattern through the interlayer insulating film, a contact formed on the other side of the gate wiring and in contact with the upper surface of the active pattern through the interlayer insulating film, and A first PIN layer formed on the interlayer insulating film and electrically connected to the contact, wherein the second pixel area is formed on the interlayer insulating film and disposed parallel to the first data line. A wire and a second PIN layer electrically connected to the second data wire, wherein the area of the second PIN layer is larger than that of the first PIN layer.

Also, the first data line and the second data line may be disposed to cross the gate line.

In addition, a first metal layer disposed to be in contact with the upper surface of the contact and the lower surface of the first PIN layer, a first transparent electrode disposed to be in contact with the upper surface of the first PIN layer, and the second data wire It may further include a second metal layer disposed to be in contact with an upper surface and a lower surface of the second PIN layer, and a second transparent electrode disposed to be in contact with an upper surface of the second PIN layer.

In addition, it further includes a first bias wire disposed in contact with the upper surface of the first transparent electrode, and a second bias wire disposed in contact with the upper surface of the second transparent electrode, the first bias wire and the second bias wire disposed in contact with the upper surface of the second transparent electrode The bias wires may be arranged to be spaced apart from each other by the same distance.

Further, a scintillator layer covering the first and second regions is included, wherein the first thickness of the scintillator layer measured in the first region is equal to the second thickness of the scintillator layer measured in the second region. It may be formed larger than the thickness.

In addition, a thickness of the scintillator layer may gradually decrease as the distance from the second data wire in the second region increases.

In addition, the first PIN layer and the second PIN layer may be formed through the same process.

In addition, the first area and the second area may be disposed adjacent to each other, and the second area may not include the active pattern.

The X-ray image sensing device of the present invention includes a dummy pixel region composed of photodiodes in a dummy region adjacent to an array region, so that additional power can be generated using an unused surplus area. According to the present invention, the operating time (ie, usable time) of the X-ray image sensing device may be extended by charging the battery with power additionally generated in the dummy pixel region, and operation energy efficiency of the X-ray image sensing device may be improved.

1 is a plan view showing a schematic configuration of a conventional X-ray image sensing device.
FIG. 2 is a cross-sectional view showing a cross section taken along line AA′ of FIG. 1 .
3 is a block diagram showing an X-ray image sensing device according to an embodiment of the present invention.
FIG. 4 is a plan view illustrating a unit pixel area included in area S of FIG. 3 and a dummy pixel area.
FIG. 5 is a cross-sectional view showing a cross section taken along lines BB′ and C-C′ of FIG. 4 .
6 is a circuit diagram for explaining the operation of a unit pixel area included in an X-ray image sensing device according to an embodiment of the present invention.
7 is a circuit diagram for explaining an operation of a dummy pixel region included in an X-ray image sensing device according to an embodiment of the present invention.

The above objects, features and advantages will be described later in detail with reference to the accompanying drawings, and accordingly, those skilled in the art to which the present invention belongs will be able to easily implement the technical spirit of the present invention. In describing the present invention, if it is determined that the detailed description of the known technology related to the present invention may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted. Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the same reference numerals are used to indicate the same or similar components.

Hereinafter, an X-ray image sensing device according to an embodiment of the present invention will be described in detail with reference to FIGS. 3 to 7 .

3 is a block diagram showing an X-ray image sensing device according to an embodiment of the present invention.

Referring to FIG. 3 , an X-ray image sensing device according to an embodiment of the present invention includes a substrate 1000, a gate unit 1200, a lead-out unit 1300 (ROIC), and a battery unit 1400 (Battery). include

The substrate 1000 includes a first region 1100 (hereinafter referred to as an array region) and a second region 1150 (hereinafter referred to as a dummy region) disposed on an outer circumferential surface of the first region. The substrate 110 may be formed of a transparent glass substrate having high light transmittance. However, this is only one embodiment and the present invention is not limited thereto.

The array area 1100 includes gate lines GL and data lines DL that are vertically and horizontally arranged to define a unit pixel area Px.

The dummy area 1150 is disposed to surround the outer circumferential surface of the array area 1100 . For example, the dummy area 1150 may be disposed to surround three sides of the array area 1100 . However, the present invention is not limited thereto.

The dummy region 1150 is disposed between the array region 1100 and the gate portion 1200 and a plurality of gate lines GL extending from the gate portion 1200 may pass therethrough.

The dummy area 1150 includes a dummy pixel area Dx. The dummy pixel region Dx includes a photodiode that converts an incident light source into electric power. Charges generated by the photodiode may be transferred to the battery unit 1400 to charge the battery unit 1400 . A detailed description of this will be described below.

The gate unit 1200 includes a plurality of gate integrated circuits 1250 that control operations of thin film transistors included in a plurality of unit pixel regions Px provided in the array region 1100 .

Specifically, the gate integrated circuit 1250 may turn on/off the thin film transistor included in each pixel region Px by providing a gate signal through the gate line GL. The thin film transistor may operate as a switch that transfers charges generated by the photodiode to the data line DL. A detailed description of this will be described later with reference to FIG. 6 .

The lead-out unit 1300 amplifies and pre-processes the current signal transmitted through the data line DL, converts it into a digital signal, and outputs an image corresponding to the converted signal.

For example, when X-rays are taken on a part of the body, the size of the current signal is large in the part of the body through which the X-rays pass, and the size of the current signal is small in the part where the X-ray transmittance is low. This difference is displayed through an image. can do.

The battery unit 1400 provides power so that the driving circuit including the gate unit 1200 and the lead-out unit 1300 can operate. The battery unit 1400 may include a secondary battery capable of charging and discharging, but the present invention is not limited thereto.

Although not clearly shown in the drawings, a scintillation layer (not shown) may be laminated or directly evaporated on the substrate 1000 in the form of a film.

The scintillation layer (not shown) absorbs photons and emits a light source from the inside. The light source is transmitted to a photodiode implemented in the unit pixel area Px of the array area 1100 and the dummy pixel area Dx of the dummy area 1150 included in the substrate 1000, and the photodiode ( A photocurrent is generated in the photodiode.

Subsequently, the photocurrent generated in the unit pixel region Px is transmitted to the lead-out unit 1300 through the first data line (DL1 in FIG. 4 ) by the thin film transistor operating as a switching element.

In addition, the photocurrent generated in the dummy region 1150 is transmitted to the battery unit 1400 through a second data line (DL2 in FIG. 4 ). That is, the photocurrent generated in the dummy region 1150 may be used to charge the battery unit 1400 .

FIG. 4 is a plan view illustrating a unit pixel area included in area S of FIG. 3 and a dummy pixel area. FIG. 5 is a cross-sectional view showing a cross section taken along lines BB' and C-C' of FIG. 4 .

Referring to FIG. 4 , the unit pixel area Px is defined by the first data line DL1 and the gate line GL. The dummy pixel area Dx is defined by the second data line DL2 and the gate line GL.

In this case, the first data line DL1 and the second data line DL2 are formed to extend in the first direction and may be arranged side by side to be spaced apart from each other, and the gate line GL is formed to extend in the first direction and be spaced apart from each other. It may be formed to extend in a second direction crossing the second data line DL2.

The unit pixel area Px and the dummy pixel area Dx may share the same gate line GL. That is, the unit pixel region Px and the dummy pixel region Dx may be disposed at positions corresponding to the same row on the substrate 1000 .

The unit pixel area Px and the dummy pixel area Dx may be disposed adjacent to each other. However, the present invention is not limited thereto, and the unit pixel area Px and the dummy pixel area Dx may be spaced apart from each other.

Also, the unit pixel area Px and the dummy pixel area Dx may be formed to have heights or widths.

Specifically, the unit pixel region Px may include a first photodiode PD1 and a thin film transistor TFT.

The thin film transistor TFT may be formed in an area where the first data line DL1 and the gate line GL cross each other. For example, the thin film transistor TFT may be disposed in a lower left area of the unit pixel area Px. However, this is only one example, and the present invention is not limited thereto.

The first photodiode PD1 may be disposed to overlap a portion of the thin film transistor TFT. However, the present invention is not limited thereto, and the first photodiode PD1 may be disposed to be electrically connected to one end of the thin film transistor TFT without overlapping with the thin film transistor TFT.

The first bias wire B1 may be disposed on the first photodiode PD1 to overlap with the first photodiode PD1. The first bias line B1 may be disposed to extend in the same direction as the first data line DL1. That is, the first bias line B1 and the first data line DL1 may be disposed in parallel. However, this is only one example, and the present invention is not limited thereto.

The dummy pixel region Dx includes the second photodiode PD2. Unlike the unit pixel area Px, the dummy pixel area Dx may not include the thin film transistor TFT.

The second photodiode PD2 may be electrically connected to a portion of the second data line DL2 and may be spaced apart from the gate line GL.

The second bias wire B2 may be disposed on the second photodiode PD2 to overlap with the second photodiode PD2. The second bias wire B2 may be disposed to extend in the same direction as the first bias wire B1. That is, the second bias wire B2 and the first bias wire B1 may be spaced apart from each other by the same distance (ie, in parallel). However, this is only one example, and the present invention is not limited thereto.

Here, since the dummy pixel region Dx does not include the thin film transistor TFT unlike the unit pixel region Px, the second photodiode PD2 is formed to have a larger area than the first photodiode PD1. It can be. In this case, the second photodiode PD2 may have a larger vertical cross-sectional area or cross-sectional area than the first photodiode PD1.

Through this, the dummy pixel region Dx can generate more charges with respect to the incident light source, so that a larger current can be provided to the battery unit 1400 . Since the current provided to the battery unit 1400 is used to operate the X-ray image sensing element, the operating time of the X-ray image sensing element can be increased and operational energy efficiency can be improved through the operation of the dummy pixel region Dx. .

Referring to FIG. 5 , a unit pixel region Px and a dummy pixel region Dx of an X-ray image sensing device according to an exemplary embodiment of the present invention are formed on the same substrate 110 .

Hereinafter, the unit pixel region Px will be described with reference to a cross section of the unit pixel region Px (a cross section cut along line BB′ in FIG. 4 ).

An active pattern 120 is formed on the substrate 110 . The active pattern 120 may be formed in a region where the first data line 140 (DL1) and the gate line 125 (GL) intersect, and a portion of the first data line 140 and the gate line 125 may be formed. It can be arranged to overlap with a part of.

The active pattern 120 may include amorphous silicon (a-Si), polycrystalline silicon, low-temperature poly-Si (LTPS), transition metal dichalcogenides, silicon ( Si), oxide semiconductors, organic semiconductors, and III-V compound semiconductors, but may be formed of at least one material, but the present invention is not limited thereto.

A gate wiring 125 is formed on the active pattern 120 . The gate line 125 operates as a gate electrode of the thin film transistor TFT, and a gate signal Vg may be applied. A gate insulating layer 122 may be formed between the active pattern 120 and the gate wiring 125 .

Here, the gate wiring 125 may include a conductive material. However, the present invention is not limited thereto, and the gate wiring 125 may be made of non-metal such as polysilicon.

The gate insulating layer 122 may include a material selected from a group including HfO2, ZrO2, Ta2O5, TiO2, SrTiO3, or (Ba, Sr)TiO3, which is a high-k film. The gate insulating layer 122 may be formed to an appropriate thickness depending on the material it contains.

A first interlayer insulating layer 130 covering the gate wiring 125 and the active pattern 120 is formed on the substrate 110 .

The first interlayer insulating film 130 may electrically insulate semiconductor elements under the first interlayer insulating film 130 from semiconductor elements on the top of the first interlayer insulating film 130 . The first interlayer insulating film is silicon such as borosilicate glass (BSG), phosphoSilicate Glass (PSG), boroPhosphoSilicate Glass (BPSG), Undoped Silicate Glass (USG), TetraEthylOrthoSilicate Glass (TEOS), or High Density Plasma-CVD (HDP-CVD). It can be formed using oxides.

A plurality of contact holes may be formed in the first interlayer insulating layer 130 . A first data wire 140 and a source/drain electrode 145 filling each contact hole are formed on the first interlayer insulating layer 130 . In this case, upper surfaces of the first data line 140 and the source/drain electrodes 145 may all be disposed on the same plane. However, the present invention is not limited thereto.

Specifically, the first data wire 140 is formed on one side of the gate wire 125 and penetrates the first interlayer insulating layer 130 to contact the upper surface of the active pattern 120 . The source/drain electrode 145 is formed on the other side of the gate wiring 125 and penetrates the first interlayer insulating layer 130 to contact the upper surface of the active pattern 120 . The first data line 140 and the first source/drain electrode 145 may be electrically connected to source/drain terminals of the thin film transistor TFT.

A second interlayer insulating film 150 covering the first data line 140 and the source/drain electrodes 145 is formed on the first interlayer insulating film 130 . Since the second interlayer insulating film 150 may perform an insulating function similar to that of the first interlayer insulating film 130 described above, duplicate descriptions will be omitted.

A first metal layer 162 contacting the upper surface of the source/drain electrode 145 is formed on the second interlayer insulating film 150 . The first metal layer 162 may be formed to partially overlap the active pattern 120, but the present invention is not limited thereto. The first metal layer 162 may include any one of nickel, copper, silver, potassium, magnesium, cadmium, and aluminum, and a mixture of two or more metals may be used.

A first PIN layer 164 is formed on the first metal layer 162 . The first PIN layer 164 has a P-I-N structure in which an I-region (Intrinsic Area) not doped with any impurities exists between a P-region doped with P-type impurities and an N-region doped with N-type impurities. can include However, this is only one example, and the present invention is not limited thereto.

A first transparent electrode 166 may be formed on the first PIN layer 164 . The first transparent electrode 166 may include a transparent material through which a light source passes. For example, the first transparent electrode 166 may be indium tin oxide (ITO), tin oxide (TO), indium zinc oxide (IZO), or indium tin zinc oxide (Indium Tin Oxide). It may be made of a transparent conductive film such as zinc oxide (ITZO).

A third interlayer insulating film 170 covering the first transparent electrode 166 is formed on the second interlayer insulating film 150 . Since the third interlayer insulating film 170 may perform an insulating function similar to that of the first interlayer insulating film 130 described above, duplicate descriptions will be omitted.

A first bias wire 180 is formed on the third interlayer insulating film 170 to penetrate the third interlayer insulating film 170 and contact the upper surface of the first transparent electrode 166 . In addition, a fourth interlayer insulating film 190 covering the upper surface of the first bias wire 180 is formed on the third interlayer insulating film 170 .

Although not clearly shown in the drawing, a scintillation layer (not shown) may be formed on the fourth insulating interlayer 190 to have the same thickness from the upper surface of the substrate 110 . That is, the top surface of the scintillation layer (not shown) formed on the fourth interlayer insulating film 190 may be formed to have a uniform top surface.

Hereinafter, the dummy pixel region Dx will be described with reference to a cross section of the dummy pixel region Dx (a cross section cut along line C-C′ in FIG. 4 ).

A first interlayer insulating film 230 is formed on the substrate 110 . The first interlayer insulating film 230 is formed in the same process as the first interlayer insulating film 230 of the unit pixel region Px, and may be made of the same material.

A second data line 240 (DL2) is formed on the first interlayer insulating layer 230 . The long axis of the second data wire 240 may be formed to extend in the same direction as the long axis of the first data wire 140 . The second data line 240 is formed in the same process as the first data line 140 and may be made of the same material.

A second interlayer insulating film 250 covering the upper surface of the second data line 240 is formed on the first interlayer insulating film 230 . The second interlayer insulating film 250 may perform an insulating function similar to that of the first interlayer insulating film 230 described above.

A second metal layer 262 is formed on the first interlayer insulating layer 230 and partially contacts the upper surface of the second data line 240 . The second metal layer 262 may be formed to contact the upper surface of the protrusion of the second data line 240 . Accordingly, the second metal layer 262 may be formed to partially overlap the second data line 240 .

The second metal layer 262 may include the same material as the first metal layer 162 by being formed in the same process. However, this is only one example, and the present invention is not limited thereto.

A second PIN layer 264 is formed on the second metal layer 262 . Like the first PIN layer 164, the second PIN layer 264 is an I-region (intrinsic area) in which no impurities are doped between a P-region doped with P-type impurities and an N-region doped with N-type impurities. ) may include a P-I-N 　 structure having a structure in which In this case, the second PIN layer 264 may be formed within the same process as the first PIN layer 164 .

However, the cross-sectional area of the second PIN layer 264 may be larger than that of the first PIN layer 164 . This difference in area size is generated as the second PIN layer 264 extends to an area remaining when the dummy pixel area Dx does not include the thin film transistor TFT.

Through this, the dummy pixel region Dx has a structure capable of receiving more light sources than the unit pixel region Px, and a larger current can be generated and supplied to the battery unit 1400 .

A second transparent electrode 266 may be formed on the second PIN layer 264 . Like the first transparent electrode 166, the second transparent electrode 266 may include a transparent material through which a light source passes. The second transparent electrode 266 may be formed within the same process as the first transparent electrode 166 .

A third interlayer insulating film 270 covering the second transparent electrode 266 is formed on the third interlayer insulating film 350 .

On the third interlayer insulating film 170 , a second bias wire 280 penetrating the third interlayer insulating film 270 and contacting the upper surface of the second transparent electrode 266 is formed. The second bias wire 280 is disposed parallel to the first bias wire 180 and can be formed within the same process.

A fourth interlayer insulating film 290 covering an upper surface of the second bias wire 280 is formed on the third interlayer insulating film 270 .

Although not clearly shown in the drawing, a scintillation layer (not shown) may be disposed on the fourth insulating interlayer 290 . In this case, the scintillation layer (not shown) may have a shape in which the thickness gradually decreases as the distance from the second data wire 240 increases. That is, the upper surface of the scintillation layer (not shown) may be formed to have an acute angle with the upper surface of the substrate 110 .

The dummy pixel region Dx has scintillation layers (not shown) having different thicknesses, but as the light source is diffused within the scintillation layer (not shown), the maximum current can be generated for each external X-ray shot. . Also, since the dummy pixel region Dx has a larger light-receiving area than the unit pixel region Px, a larger current can be generated and supplied to the battery unit 1400 .

6 is a circuit diagram for explaining the operation of a unit pixel area included in an X-ray image sensing device according to an embodiment of the present invention. 7 is a circuit diagram for explaining an operation of a dummy pixel region included in an X-ray image sensing device according to an embodiment of the present invention.

Referring to FIG. 6 , the unit pixel area of the X-ray image sensing device includes one first photodiode PD1 and one thin film transistor TFT, respectively. In this case, the X-ray image sensor is configured by laminating or directly evaporation of a scintillation layer (not shown) on the 2D array substrate in the form of a film.

When photons from external X-rays are incident from the surface of the X-ray image sensing element, the scintillation layer (not shown) absorbs the photons and emits light from the inside. This light is transmitted to the first photodiode PD1 implemented in the unit pixel region Px, and a photocurrent is generated in the first photodiode PD1. That is, the first photodiode PD1 transfers electric charge generated by a light source (eg, X-ray) incident for a certain period of time to the thin film transistor TFT.

A bias voltage Vbias is applied to one end of the first photodiode PD1, and a thin film transistor TFT is connected to the other end. The first photodiode PD1 absorbs the light emitted from the scintillation layer (not shown) to generate charges corresponding to the intensity of the light source. At this time, the generated charge is applied to one side of the thin film transistor (TFT).

Subsequently, when the gate signal Vg is applied to the gate terminal of the thin film transistor TFT through the gate line GL, the charge provided from the first photodiode PD1 is transferred to the first data connected to the other end of the thin film transistor TFT. It is transmitted to the wiring DL1.

Then, the current signal Id by the charge transferred from the unit pixel region Px to the data line DL1 is transferred to the lead-out unit 1300 .

The lead-out unit 1300 amplifies the received current signal through an amplifier (charge AMP), and acquires a dark image and a bright image through the first switch S1 and the second switch S2, respectively. At this time, the lead-out unit 1300 may operate using a DCS (Double Correlation Sampling) method for image acquisition. However, this is only one example, and the present invention is not limited thereto.

Subsequently, the readout unit 1300 transfers an analog signal related to the acquired image to the ADC through the MUX. The ADC may convert an analog signal into a digital signal and output a signal for an image.

Referring to FIG. 7 , the dummy pixel region Dx transfers charge generated by a light source (eg, X-ray) incident for a predetermined time to the battery unit 1400 .

The dummy pixel region Dx includes the second photodiode PD2, one end of which is applied with the bias voltage Vbias, and the other end connected to the battery unit 1400.

The second photodiode PD2 absorbs light emitted from the scintillation layer (not shown) to generate electric charges corresponding to the intensity of the light source. At this time, the generated charge may be temporarily stored in the storage capacitor Cst, and the stored charge is transferred to the battery unit 1400 . However, the present invention is not limited thereto, and the storage capacitor Cst may be omitted.

That is, the X-ray image sensing element of the present invention operates by converting the extra amount of light generated during the operation of the X-ray image sensing element into power using the dummy pixel area Dx and storing the converted power in the battery unit 1400. available for

Through this, the X-ray image sensing device of the present invention can charge the battery unit 1400 with power additionally generated in the dummy pixel region Dx to extend the operation time (ie, usable time) of the X-ray image sensing device. , can improve the operating energy efficiency of the X-ray image sensing device.

The above-described present invention, since various substitutions, modifications, and changes are possible to those skilled in the art without departing from the technical spirit of the present invention, the above-described embodiments and accompanying drawings is not limited by

110: substrate 120: active pattern
122: gate insulating film 125: gate wiring
130: first interlayer insulating film 140: first data wire
145: source/drain electrode 150: second interlayer insulating film
162: first metal layer 164: first PIN layer
166: first transparent electrode 170: third interlayer insulating film
180: first bias wire 190: fourth interlayer insulating film
230: first interlayer insulating film 240: second data wire
250: second interlayer insulating film 262: second metal layer
264: second PIN layer 266: second transparent electrode
270: third interlayer insulating film 280: second bias wiring

Claims (14)

a first region including a first pixel region including a first photodiode and a thin film transistor; and
A second region disposed adjacent to an outer circumferential surface of the first region and including a second pixel region including only a second photodiode;
An area of the second photodiode is formed larger than an area of the first photodiode;
The second pixel region does not include a thin film transistor.
X-ray image sensor.
According to claim 1,
The first photodiode has one end connected to a bias wire and the other end connected to the thin film transistor;
The thin film transistor includes a source terminal connected to the first photodiode, a drain terminal connected to a first data line, and a gate terminal connected to a gate line.
X-ray image sensor.
According to claim 2,
The first data wire and the gate wire define the first pixel area;
A second data line and the gate line disposed parallel to the first data line define the second pixel area.
X-ray image sensor.
According to claim 2,
The second photodiode is disposed to be spaced apart from the gate wire and is electrically non-conductive.
X-ray image sensor.
According to claim 1,
a lead-out unit receiving a signal output from a first data wire connected to the thin film transistor;
Further comprising a battery unit receiving a current output from a second data wire disposed parallel to the first data wire connected to the second photodiode.
X-ray image sensor.
According to claim 5,
The battery unit supplies power to a gate integrated circuit that transmits a signal to a gate line crossing the first and second pixel areas.
X-ray image sensor.
a substrate on which first and second regions are defined;
a first pixel area disposed in the first area; and
a second pixel area disposed in the second area;
The first pixel area,
an active pattern formed on the substrate;
a gate line formed on the active pattern;
an interlayer insulating layer covering upper surfaces of the active pattern and the gate line;
a first data wire formed on one side of the gate wire, passing through the interlayer insulating film and in contact with an upper surface of the active pattern;
a contact formed on the other side of the gate wire and penetrating the interlayer insulating layer to contact the upper surface of the active pattern; and
A first PIN layer formed on the interlayer insulating film and electrically connected to the contact;
The second pixel area,
a second data wire formed on the interlayer insulating film and disposed parallel to the first data wire; and
A second PIN layer electrically connected to the second data line,
The area of the second PIN layer is formed larger than the area of the first PIN layer,
The second pixel region does not include a thin film transistor.
X-ray image sensor.
According to claim 7,
The first data wire and the second data wire are disposed to cross the gate wire.
X-ray image sensor.
According to claim 7,
A first metal layer disposed to be in contact with the upper surface of the contact and the lower surface of the first PIN layer;
A first transparent electrode disposed in contact with the upper surface of the first PIN layer;
A second metal layer disposed to be in contact with the upper surface of the second data line and the lower surface of the second PIN layer;
Further comprising a second transparent electrode disposed in contact with the upper surface of the second PIN layer
X-ray image sensor.
According to claim 9,
A first bias wire disposed in contact with an upper surface of the first transparent electrode;
Further comprising a second bias wire disposed to contact the upper surface of the second transparent electrode,
The first bias wire and the second bias wire are disposed to be spaced apart from each other by the same distance.
X-ray image sensor.
According to claim 7,
Further comprising a scintillator layer covering the first and second regions,
The first thickness of the scintillator layer measured in the first region is formed greater than the second thickness of the scintillator layer measured in the second region.
X-ray image sensor.
According to claim 11,
The thickness of the scintillator layer gradually decreases as the distance from the second data wire in the second region increases.
X-ray image sensor.
According to claim 7,
The first PIN layer and the second PIN layer are formed through the same process
X-ray image sensor.
According to claim 7,
The first region and the second region are disposed adjacent to each other,
The second region does not include the active pattern.
X-ray image sensor.

Images