KR102464047B1 - Plasma processing apparatus - Google Patents

Abstract

By reducing plasma leakage, the etching rate is improved.
The plasma processing apparatus has an opening 11 provided at one end, and a cylindrical electrode 10 into which a process gas is introduced. A high-frequency power supply for applying a high-frequency voltage is connected to the cylindrical electrode 10 . The plasma processing apparatus is provided with the rotary table 3 as a conveyance part, and the rotary table 3 passes the workpiece|work W directly under the opening part 11 of the cylindrical electrode 10. As shown in FIG. The plasma processing apparatus also includes a magnetic member 17 that forms, in the vicinity of the opening 11 , a magnetic field B including lines of magnetic force that are substantially parallel to the conveyance direction of the workpiece W .

Description

Plasma processing apparatus {PLASMA PROCESSING APPARATUS}

The present invention relates to a plasma processing apparatus.

DESCRIPTION OF RELATED ART In the manufacturing process of various products, such as a semiconductor device, a liquid crystal display, or an optical disk, thin films, such as an optical film, are formed into a film, for example on a workpiece|work, such as a wafer and a glass substrate. A thin film can be created by repeating film formation for forming a film of a metal or the like on the work and film processing such as etching, oxidation or nitriding on the formed film.

Although film formation and film processing can be performed by various methods, there is one using plasma as one of them. In film-forming, the target which consists of a material to form into a film is arrange|positioned in a vacuum container. An inert gas is introduced into the vacuum vessel, a direct current voltage is applied to the target to turn the inert gas into plasma to generate ions, and the ions are collided with the target. Film formation is performed by depositing the material struck from the target on the work.

In the film treatment, an electrode for generating plasma is placed in a vacuum container, and the formed work is placed under the electrode. A process gas is introduced into a vacuum vessel, and a high-frequency voltage is applied to an electrode to turn the process gas into plasma to generate ions. In the case of etching, an inert gas such as argon gas is used as the process gas. In the case of oxidation treatment, oxygen is used, and in the case of nitriding treatment, nitrogen is used. A film treatment such as etching the film or generating an oxide or nitride is performed by impinging the generated ions on the film on the work.

A plasma processing apparatus in which a rotary table is disposed inside one vacuum container so that such film formation and film treatment can be performed continuously, and a plurality of film forming units and film treatment units are disposed in a circumferential direction above the rotary table. There is (for example, refer to Patent Documents 1 and 2). An optical film etc. are formed by holding and conveying a workpiece|work on a rotary table, and making it pass under the film-forming unit and a film processing unit.

For example, in a film processing unit in which electrodes such as those in Patent Documents 1 and 2 are formed in a cylindrical shape with a closed upper end (hereinafter referred to as a "tubular electrode"), plasma is generated by introducing a process gas into the cylindrical electrode. occurs inside of The opening of the cylindrical electrode is arranged to face the face of the rotary table through a narrow clearance, and the workpiece is configured to pass under the opening with a narrow clearance. In this way, the film treatment can be performed while reducing the outflow of plasma.

Patent Document 1: Japanese Patent Laid-Open No. 2002-256428 Patent Document 2: Japanese Patent Publication No. 57-27183

In the film processing unit, in order to improve the etching rate or the compound production rate, it is necessary to increase the voltage applied to the electrode or increase the pressure of the process gas to be introduced. However, when the voltage or gas pressure is increased, the plasma generated inside the cylindrical electrode is expanded to the outside, the self-bias voltage is reversed, and there is a possibility that the film treatment cannot be established.

In order to solve the above-mentioned problems, an object of this invention is to suppress the leakage of the discharge of the inside of a cylindrical electrode to the outside, and to stabilize a process in a plasma processing apparatus, and to improve a process speed.

In order to achieve the above object, a plasma processing apparatus of the present invention includes a cylindrical electrode having an opening formed at one end and into which a process gas is introduced, a power supply for applying a voltage to the cylindrical electrode, and directly under the opening It is provided with a conveyance part which carries in and carries out a workpiece|work, and a magnetic member which forms the magnetic field containing the magnetic force line parallel to the conveyance direction of the said workpiece|work in the vicinity of the said opening part.

As a magnetic field is formed in the vicinity of the opening of the cylindrical electrode by the magnetic member, the plasma electrons inside the cylindrical electrode are captured by the magnetic field, and the discharge inside the cylindrical electrode is not leaked to the outside even under conditions of high voltage and high gas pressure. it gets difficult Thereby, the inversion of the self-bias voltage can be suppressed and the film processing can be performed stably. Further, as the magnetic field includes lines of magnetic force parallel to the transport direction of the work, a tunnel of the magnetic field is formed inside the cylindrical electrode, and plasma is induced in the tunnel and spreads evenly, so that the ions spread throughout the work. Accordingly, the etching rate and the compound generation rate of the plasma processing apparatus can be improved, thereby improving reliability.

1 is a plan view schematically showing the configuration of a plasma processing apparatus according to a first embodiment of the present invention.
FIG. 2 is a cross-sectional view taken along line AA of FIG. 1 .
FIG. 3 is a cross-sectional view taken along line BB of FIG. 1 .
Fig. 4(a) is a view schematically illustrating a magnetic field formed by a plasma generated in the cylindrical electrode and a magnetic member by simplifying Fig. 3 . (b) is a simplified plan view of the film processing unit, and is a diagram schematically showing the plasma generated in the cylindrical electrode and the magnetic field formed by the magnetic member.
Fig. 5 is a simplified plan view of a film treatment unit showing a modified example of the first embodiment of the present invention.
6 is a schematic configuration diagram of a plasma processing apparatus according to a second embodiment of the present invention.
FIG. 7A is a view schematically illustrating a magnetic field formed by plasma generated in the cylindrical electrode and a magnetic member by simplifying FIG. 6 . (b) is a simplified plan view of the film processing unit, and is a diagram schematically showing the plasma generated in the cylindrical electrode and the magnetic field formed by the magnetic member.
8 is a cross-sectional view showing the configuration of a film treatment unit according to another embodiment of the present invention.

[First embodiment]

[composition]

EMBODIMENT OF THE INVENTION Embodiment of this invention is described concretely with reference to drawings.

1 and 2 , the plasma processing apparatus has a chamber 1 having a substantially cylindrical shape. The chamber 1 is provided with an exhaust part 2, and the inside of the chamber 1 can be exhausted by vacuum. An approximately circular rotary table 3 is disposed inside the chamber 1 . A drive mechanism (not shown) is connected to the central axis of the rotary table 3 . By driving the drive mechanism, the rotary table 3 rotates with its central axis as its rotation axis. A plurality of holding portions 3a for holding the work W are provided on the upper surface of the rotary table 3 . The plurality of holding portions 3a are provided at equal intervals along the circumferential direction of the rotary table 3 . As the rotary table 3 rotates, the work W held by the holding portion 3a moves in the circumferential direction of the rotary table 3 . In other words, on the surface of the rotary table 3, a conveyance path (hereinafter referred to as a "conveyance path P") which is a circular movement trajectory of the workpiece is formed.

Hereinafter, when simply referred to as "the circumferential direction", "the circumferential direction of the rotary table 3" is meant, and when simply referred to as "the radial direction", "the radial direction of the rotary table 3" is meant. In addition, although the flat board|substrate is used as an example of the workpiece|work W in this embodiment, the kind of the workpiece|work W to which plasma processing is performed is not limited to a specific thing. For example, you may use a curved board|substrate which has a recessed part or a convex part at the center.

Above the rotary table 3, a unit (hereinafter, referred to as a “processing unit”) for processing each process in the plasma processing apparatus is provided. Each processing unit is arrange|positioned so that it may mutually vacate a predetermined space|interval along the conveyance path P of the workpiece|work formed on the surface of the rotary table 3, and may adjoin. The process of each process is performed by the workpiece|work W hold|maintained by the holding|maintenance part 3a passing under each processing unit.

In the example of FIG. 1 , seven processing units 4a to 4g are arranged along the conveyance path P on the rotary table 3 . In the present embodiment, the processing units 4a , 4b , 4c , 4d , 4f , and 4g are film-forming units that perform a film-forming process on the work W . The processing unit 4e is a film processing unit that processes the film formed on the work W by the film forming unit. In this embodiment, the film-forming unit is demonstrated as what performs sputtering. Incidentally, the film processing unit is described as performing etching. Between the processing unit 4a and the processing unit 4g, an unprocessed workpiece W is loaded into the chamber 1 from the outside, and the processed workpiece W is transported out of the chamber 1 . A load lock unit 5 is provided. In addition, in this embodiment, let the conveyance direction of the workpiece|work W be a clockwise direction in FIG. 1, and let it be the direction toward the processing unit 4g from the position of the processing unit 4a. Of course, this is an example, and the conveyance direction, the kind of processing unit, the order in which it was arranged, and the number are not limited to a specific thing, It can determine suitably.

The structural example of the processing unit 4a which is a film-forming unit is shown in FIG. Although the other film-forming units 4b, 4c, 4d, 4f, and 4g may be comprised similarly to the film-forming unit 4a, you may apply another structure. As shown in FIG. 2, the film-forming unit 4a is equipped with the target 6 adhered to the upper surface of the inside of the chamber 1 as a sputtering source. The target 6 is a plate-shaped member made of a material to be deposited on the work W. The target 6 is provided in the position opposite to the work W, when the work W passes under the film-forming unit 4a. A DC power supply 7 for applying a DC voltage to the target 6 is connected to the target 6 . Moreover, a sputtering gas introduction part 8 for introducing a sputtering gas into the interior of the chamber 1 is provided in the vicinity of the location where the target 6 is attached on the upper surface of the chamber 1 . As the sputtering gas, for example, an inert gas such as argon can be used. A barrier rib 9 for reducing the outflow of plasma is provided around the target 6 . In addition, as for the power supply, well-known ones such as a DC pulse power supply and an RF power supply can be applied.

The structural example of the film|membrane treatment unit 4e is shown in FIGS. FIG. 2 is a cross-sectional view taken along line A-A of FIG. 1 . FIG. 3 is a cross-sectional view taken along line B-B of FIG. 1 . Fig. 4(a) is a schematic diagram partially simplified of Fig. 3, and shows the action of the membrane treatment unit 4e. Fig. 4(b) is a simplified plan view of the film treatment unit 4e, showing the action of the film treatment unit 4e.

The film processing unit 4e is provided with an electrode (hereinafter referred to as a "tubular electrode") 10 formed in a cylindrical shape provided on the upper surface of the inside of the chamber 1 . The cylindrical electrode 10 has an angular cylindrical shape, has an opening 11 at one end, and is closed at the other end. The cylindrical electrode 10 penetrates through the through hole provided on the upper surface of the chamber 1 , so that the end of the opening 11 is located inside the chamber 1 and the closed end is located outside the chamber 1 . are placed The tubular electrode 10 is supported on the periphery of the through hole of the chamber 1 via an insulating material 21 . The opening 11 of the cylindrical electrode 10 is arrange|positioned at the position facing the conveyance path P formed on the turn table 3 . That is, the rotary table 3 conveys the workpiece|work W as a conveyance part, and makes it pass directly under the opening part 11. As shown in FIG. And the position directly under the opening part 11 turns into the passage position of the workpiece|work W.

As shown in Fig. 4B, the cylindrical electrode 10 has a fan shape that, when viewed from above, expands in diameter from the center side in the radial direction r of the rotary table 3 to the outside. The opening 11 of the cylindrical electrode 10 is similarly shaped like a fan. The speed at which the workpiece W held on the rotary table 3 passes under the opening 11 becomes slower toward the center side in the radial direction r of the rotary table 3, and goes outward. the faster it goes Therefore, if the opening 11 is a simple rectangle or a square, a difference occurs in time for the workpiece W to pass directly under the opening 11 from the center side and the outside in the radial direction. By expanding the diameter of the opening 11 from the center side to the outside in the radial direction r, the time for the workpiece W to pass through the opening 11 can be made constant, and the plasma treatment described later can be made uniform. can However, a rectangle or a square may be sufficient as long as the difference in passing time does not become a problem on a product.

As described above, the cylindrical electrode 10 penetrates the through hole of the chamber 1 , and a part thereof is exposed to the outside of the chamber 1 . A portion of the cylindrical electrode 10 exposed to the outside of the chamber 1 is covered with an external shield 12 as shown in FIG. 3 . The space inside the chamber 1 is kept airtight by the outer shield 12 . A periphery of a portion of the cylindrical electrode 10 positioned inside the chamber 1 is covered with an inner shield 13 . The inner shield 13 has a cylindrical shape coaxial with the cylindrical electrode 10 , and is supported on the upper surface inside the chamber 1 . Each side surface of the cylinder of the inner shield 13 is provided substantially parallel to each side surface of the cylinder electrode 10 . The lower end of the inner shield 13 is at the same height as the opening 11 of the cylindrical electrode 10, but at the lower end of the inner shield 13, a flange extending parallel to the upper surface of the rotary table 3 ( 14) is installed. This flange 14 suppresses the plasma generated inside the cylindrical electrode 10 from flowing out to the outside of the inner shield 13 . The work W conveyed by the rotary table 3 passes through the gap between the rotary table 3 and the flange 14 , and is carried in directly under the opening of the cylindrical electrode 10 , and again the rotary table 3 ) and the flange 14 , and is carried out from directly under the opening of the cylindrical electrode 10 .

An RF power supply 15 for applying a high-frequency voltage is connected to the cylindrical electrode 10 . A matching box (not shown) is connected in series to the output side of the RF power supply 15 . The RF power supply is also connected to the chamber 1, and the cylindrical electrode 10 is a cathode, and the chamber 1 is an anode. In addition, the chamber 1 and the rotary table 3 are grounded. The inner shield 13 with flange 14 is also grounded.

In addition, a process gas introduction part 16 is connected to the cylindrical electrode 10 , and a process gas is introduced into the cylindrical electrode 10 from an external process gas supply source via the process gas introduction part 16 . The process gas can be appropriately changed according to the purpose of the film treatment. For example, in the case of etching, an inert gas such as argon can be used as the etching gas. When performing oxidation treatment, oxygen can be used. When nitriding is performed, nitrogen can be used. The RF power source 15 and the process gas introduction unit 16 are connected together to the cylindrical electrode 10 via a through hole provided in the external shield 12 .

Further, a magnetic member 17 is provided below the rotary table 3 . The magnetic member 17 is mounted on a support 18 attached to the bottom surface of the chamber 1 , and is disposed at a position opposite to the opening 11 of the cylindrical electrode 10 with the rotary table 3 interposed therebetween. has been As shown in FIG. 4, the magnetic member 17 can be comprised with a pair of rod-shaped permanent magnets which consist of the 1st magnet 17a and the 2nd magnet 17b. The first magnet 17a and the second magnet 17b are spaced apart from each other so that portions having different polarities face each other. "Arrange so that parts of different polarities are opposed" means that the S pole side of the second magnet 17b faces the N pole side of the first magnet 17a, and the second magnet 17a faces the S pole side of the first magnet 17a. This means arranging the magnet 17b so that the north pole side faces each other. Moreover, the 1st magnet 17a and the 2nd magnet 17b are respectively arrange|positioned so that it may be orthogonal with respect to the rotation direction of the turn table 3 .

By arranging the first magnet 17a and the second magnet 17b to face portions of different polarities at a predetermined distance, a magnetic field B is generated between the first magnet 17a and the second magnet 17b. Occurs. As shown in Fig. 4(a), this magnetic field B passes through the rotary table 3 up and down and forms a magnetic force line formed in an arc shape from the first magnet 17a to the second magnet 17b. include In addition, this magnetic field B contains magnetic force lines parallel to or substantially parallel to the rotary table 3 in the vicinity of the opening 11 of the cylindrical electrode 10 . As shown in Fig. 4(b), since the first magnet 17a and the second magnet 17b are disposed so as to be perpendicular to the rotation direction of the rotation table 3, the magnetic field B is generated by the rotation table ( It becomes parallel to the conveyance direction of the workpiece|work W formed in 3). The distance between the first magnet 17a and the second magnet 17b is appropriate in consideration of the magnetic force of the magnet so that the magnetic field formed between the two magnets obtains sufficient magnetic force to capture the electrons of plasma, which will be described later. can be determined In Fig. 4(b), the first magnet 17a and the second magnet 17b are opposed to each other with a gap equal to the circumferential width of the opening 11, but as shown in the modified example of Fig. 5, the opening ( 11), you may make the space|interval narrower than the circumferential direction width|variety and make them oppose. Even if an inexpensive and weak magnet is used, plasma electrons are easily captured by making the distance to each other close.

In addition, the magnetic force of the first magnet 17a and the second magnet 17b, the arrangement interval, and the separation distance between the rotary table 3 are set under the condition that the magnetic flux density on the work W is 200 Gauss or more. desirable.

The plasma processing apparatus further includes a control unit 20 . The control unit 20 is constituted by an arithmetic processing device such as a PLC or a CPU. The control unit 20 controls the introduction and exhaust of the sputter gas and the process gas into the chamber 1 , the control of the DC power supply 7 and the RF power supply 15 , and the control of the rotation speed of the rotary table 3 . control, etc.

[Action]

The operation of the plasma processing apparatus of the present embodiment will be described. An unprocessed workpiece W is loaded into the chamber 1 from the load lock chamber. The carried-in work W is held by the holding part 3a of the rotary table 3 . The inside of the chamber 1 is exhausted by the exhaust part 2, and it is in a desired vacuum state. By driving the rotary table 3, the work W is conveyed along the conveyance path P and passed under each processing unit 4a-4g.

In the film forming unit 4a, sputtering gas is introduced from the sputtering gas introduction unit 8, and a DC voltage is applied from the DC power supply 7 to the sputtering source. The sputtering gas is turned into plasma by the application of a DC voltage and ions are generated. When the generated ions collide with the target 6 , the material of the target 6 is ejected. A thin film is formed on the work W by depositing the protruding material on the work W passing under the film forming unit 4a. In the other film forming units 4b, 4c, 4d, 4f, and 4g, film forming is performed in the same manner. However, it is not necessarily necessary to form a film in all film forming units.

The workpiece W on which the film was formed in the film forming units 4a to 4d is then transferred by the rotary table 3 on the transfer path P, and in the film processing unit 4e, the cylindrical electrode 10 is It passes through the position directly below the opening 11 of the , that is, the film treatment position. As described above, in this embodiment, an example in which etching is performed in the film processing unit 4e will be described. In the film processing unit 4e , an etching gas is introduced into the cylindrical electrode 10 from the process gas introduction unit 16 , and a high-frequency voltage is applied from the RF power supply 15 to the cylindrical electrode 10 . The etching gas is turned into plasma by application of a high-frequency voltage to generate ions. The generated ions collide with the thin film on the work W passing under the opening 11 of the cylindrical electrode 10, whereby the thin film is etched. In addition, the plasma inside the cylindrical electrode 10 spreads in the radial direction r of the rotary table 3 .

As shown in FIG. 3 , a first magnet 17a and a second magnet 17b are disposed directly under the opening 11 so as to be orthogonal to the rotational direction. A magnetic field B is generated between the first magnet 17a and the second magnet 17b. This magnetic field B is generated from the first magnet 17a, passes through the rotary table 3 and the work W, reaches the vicinity of the opening 11 above the work W, and again W) and a magnetic force line passing through the rotary table 3 and reaching the second magnet 17b. In other words, the magnetic field B includes lines of magnetic force formed across the work. As described above, when a magnetic field is formed in the vicinity of the opening 11 , that is, between the opening 11 and the work, plasma inside the cylindrical electrode 10 is captured by the magnetic field B and the Plasma density in the vicinity increases. Ions easily collide with the film of the work W held on the rotary table 3 . Moreover, the magnetic field B contains the magnetic force line parallel to the conveyance direction of the workpiece|work W. Since this magnetic force line widens the inside of the cylindrical electrode 10 in the radial direction r, a tunnel of a magnetic field in the radial direction is formed. As the plasma is captured by the tunnel of the magnetic field, the plasma tends to spread in the radial direction r, and ions collide without leaving the workpiece W passing directly under the opening 11 .

The workpiece W subjected to the film treatment in the film treatment unit 4e is then film-formed in the film-forming units 4f and 4g to form a thin film. This process is repeatedly performed by rotation of the rotary table 3 , and the workpiece W on which a desired thin film is formed is taken out of the chamber 1 from the load lock part 5 .

[effect]

As described above, the plasma processing apparatus of the present embodiment includes a cylindrical electrode 10 having an opening 11 provided at one end and into which a process gas is introduced. An RF power supply 15 for applying a voltage is connected to the cylindrical electrode 10 . The plasma processing apparatus is provided with the rotation table 3 as a conveyance part, The rotation table 3 conveys the workpiece|work W, and makes it pass directly under the opening part 11 of the cylindrical electrode 10. As shown in FIG. The plasma processing apparatus is also provided with a magnetic member 17 that forms, in the vicinity of the opening 11 , a magnetic field B including lines of magnetic force that are substantially parallel to the workpiece W .

Since the magnetic field B formed in the vicinity of the opening 11 traps electrons of the plasma generated inside the cylindrical electrode 10 , a plasma confinement effect occurs and the plasma starts to leak out of the cylindrical electrode 10 . can be reduced. Thereby, the inversion of the self-bias voltage can be suppressed, and the film processing can be performed stably. In addition, since the plasma density increases in the vicinity of the work W held by the rotary table 3, the plasma easily collides with the film on the work W, and the etching rate can be improved. Moreover, the magnetic field B contains the magnetic force line parallel to the conveyance direction of the workpiece|work W. Accordingly, a tunnel of the magnetic field is formed in the radial direction r of the inside of the cylindrical electrode 10 . As plasma is captured in this tunnel, it is guided to this tunnel and spreads in the radial direction r, so that ions can collide with the workpiece W without leaving any residue. As a result, the etching rate and compound generation rate of the plasma processing apparatus can be improved, and the etching precision can be increased. In addition to etching, the same effect is obtained even when oxidation treatment or nitridation treatment is performed.

The magnetic member 17 is a first magnet 17a and a second magnet 17b which are a pair of magnets arranged so that different portions of respective polarities face each other. The 1st magnet 17a and the 2nd magnet 17b are provided below the passage position of the workpiece|work W as directly under the opening part 11. As shown in FIG. The magnetic field B is formed so as to span the work W passing through the film processing position. As the magnetic field B is formed in this way, plasma is concentrated in the vicinity of the central portion in the circumferential direction of the opening 11, and diffusion of the plasma can be suppressed. In addition, the magnetic field B includes magnetic lines of force that are substantially parallel to the work W, and since these lines of magnetic force are formed at a position close to the work, a high plasma density can be obtained in the vicinity of the work W.

The magnetic member 17 is specifically provided below the rotary table 3 . For example, in the case where the magnetic member 17 is incorporated in an existing plasma processing apparatus, it is not necessary to change the configuration of the film processing unit 4e and attachment is easy.

[Second embodiment]

Next, a second embodiment will be described with reference to FIGS. 6 and 7 . In addition, about the same component as the component of 1st Embodiment, the same code|symbol is attached|subjected and detailed description is abbreviate|omitted.

In the second embodiment, as shown in FIG. 6 , the magnetic member 17 is provided in the vicinity of the side surface of the cylindrical electrode 10 . Specifically, the magnetic member 17 is attached to the side surface of the inner shield 13 covering the cylindrical electrode 10 . More specifically, the first magnet 17a and the second magnet 17b are in contact with opposite side surfaces in the conveying direction of the inner shield 13 , and the upper surface and the inner shield 13 inside the chamber 1 . It is attached to be supported on the flange 14 of

Accordingly, in the vicinity of the opening 11 of the cylindrical electrode 10, the first magnet 17a and the second magnet 17b face each other with an interval corresponding to the width of the opening 11 empty. . Further, the first magnet 17a and the second magnet 17b are arranged so as to be orthogonal to the rotation direction of the rotary table 3 . The 1st magnet 17a and the 2nd magnet 17b are arrange|positioned so that parts of mutually different polarity may oppose similarly to 1st Embodiment.

As shown in FIG. 7 , a magnetic field B is generated between the first magnet 17a and the second magnet 17b attached to the side surface of the inner shield 13 . The magnetic field B contains magnetic force lines substantially parallel to the rotary table 3 in the vicinity of the opening 11 of the cylindrical electrode 10 . Since the first magnet 17a and the second magnet 17b are disposed so as to be orthogonal to the rotation direction of the rotary table 3 , the magnetic field B is applied in the conveying direction of the workpiece W formed on the rotary table 3 . become parallel with

As in the first embodiment, since this magnetic force line captures electrons in the plasma generated inside the cylindrical electrode 10, a confinement effect occurs, and plasma leaking out of the cylindrical electrode 10 can be reduced. have. Thereby, the inversion of the self-bias voltage can be suppressed, and the film processing can be performed stably. In addition, since the plasma density in the vicinity of the rotary table 3 increases, the etching rate can be improved.

[Other embodiments]

This invention is not limited to said embodiment. For example, in the above-described embodiment, etching was performed in the film treatment, but an oxidation treatment or a nitriding treatment may be performed. In the case of oxidation treatment, oxygen gas may be introduced into the film treatment unit 4e, and in the case of nitriding treatment, nitrogen gas may be introduced into the film treatment unit 4e.

Although the rotary table 3 was used as a conveyance part of a plasma processing apparatus in the above-mentioned embodiment, it is not limited to this. As long as it can convey the workpiece|work W and can convey it sequentially to a processing unit, it can apply as a conveyance part. For example, the conveyance part may be comprised by a rotating drum, and you may arrange|position each processing unit in the circumferential direction of a drum.

In the above embodiment, in the film processing unit 4e, the cylindrical electrode 10 is provided so as to penetrate the upper surface of the chamber 1, and the periphery of the cylindrical electrode 10 is surrounded by an outer shield 12 and an inner shield ( 13), but is not limited thereto. For example, as shown in FIG. 8 , the tubular electrode 10 is mounted on the upper surface of the chamber 1 with an insulating material 21 interposed therebetween, and the opening 11 of the tubular electrode 10 is inserted into the through hole of the chamber 1 . You can also connect it with . In this structure, since the cylindrical electrode 10 seals the inside of the chamber 1, the outer shield 12 can be omitted. In addition, since the upper surface inside the chamber 1 plays the same role as the flange 14 of the inner shield 13 , the inner shield 13 may be omitted. Electrons collide with the process gas that starts leaking from the opening 11 of the cylindrical electrode 10 to the outside and are ionized, but the electrons can flow to the ground in the vicinity of the opening 11, so that the ionization effect becomes thin as a result. Therefore, diffusion of plasma can be suppressed. However, if the gap between the opening 11 and the work W is wide, ionization occurs at a place away from the wall surface of the chamber 1 and plasma is diffused. It is preferable to shorten the distance of the upper surface to suppress the plasma leakage to the outside of the cylindrical electrode 10 .

In addition, the shape of the chamber 1 which accommodates the conveyance part and each processing unit, the kind and arrangement|positioning aspect of a processing unit are not limited to a specific thing, either, It can change suitably according to the type of the workpiece|work W and an installation environment.

Although a pair of bar magnets were used as the magnetic member 17 in the above-mentioned embodiment, it is not limited to this. As long as it can form the magnetic field B containing the magnetic force line parallel with respect to the rotary table 3, the thing of a different shape can be used. Also, instead of the permanent magnet, an electromagnet or the like in which a coil is wound around an iron core may be used.

DESCRIPTION OF SYMBOLS 1: chamber, 2: exhaust part, 3: rotary table, 3a: holding part, 4a, 4b, 4c, 4d, 4f, 4g: processing unit (film-forming unit), 4e: processing unit (film processing unit), 5: Load lock part, 6: target, 7: DC power supply, 8: sputter gas introduction part, 9: barrier rib, 10: cylindrical electrode, 11: opening, 12: external shield, 13: internal shield, 14: flange, 15: RF power, 16 process gas introduction part, 17 magnetic member, 17a first magnet, 17b second magnet, 18 support, 20 control unit, 21 insulating material, B magnetic field, P conveying path, W work, r: radial direction

Claims (4)

A plasma processing apparatus for processing a workpiece with plasma, comprising:
A cylindrical electrode having an opening formed at one end and into which a process gas is introduced;
a power supply for applying a voltage to the cylindrical electrode;
a conveying unit conveying the work and passing it directly under the opening;
A magnetic member that forms, in the vicinity of the opening, a magnetic field including lines of magnetic force parallel to the conveying direction of the work.
to provide
The plasma processing apparatus according to claim 1, wherein the magnetic field is formed at a position where the work conveyed by the conveying unit passes directly under the opening of the cylindrical electrode. The magnetic member according to claim 1, wherein the magnetic member is a pair of magnets provided below the passage position of the workpiece directly under the opening, and portions having different polarities face each other, and between the pair of magnets. and forming a magnetic field including magnetic force lines extending across the workpiece passing through the passing position. The rotary table according to claim 1, wherein the conveying unit is rotationally driven while holding the work on an upper surface,
and the magnetic member is provided below the rotary table to generate magnetic force lines parallel to the rotation direction of the rotary table. The plasma processing apparatus according to claim 1, wherein the magnetic member is a pair of magnets disposed in the vicinity of a side surface of the cylindrical electrode, and portions having different polarities face each other.

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