KR102389729B1 - Display device using semiconductor light emitting device - Google Patents

Abstract

A display device according to the present invention includes a plurality of frames, a plurality of light source units respectively disposed on one surface of the plurality of frames, the plurality of light sources including a substrate, a plurality of semiconductor light emitting devices mounted on the substrate, and the plurality of frames. It is mounted on a frame and includes an elastic member for applying an elastic force to the neighboring frames, and an adjustment bracket disposed on the other surfaces of the plurality of frames, wherein the adjustment bracket is configured to move the plurality of frames to adjust the distance between the neighboring light sources. It is characterized in that at least one side is formed with an adjustment hole inclined with respect to a direction toward one surface of the plurality of frames.

Description

Display device using semiconductor light emitting device {DISPLAY DEVICE USING SEMICONDUCTOR LIGHT EMITTING DEVICE}

The present invention relates to a display device, and more particularly, to a display device using a semiconductor light emitting device.

Recently, in the field of display technology, a display device having excellent characteristics such as a thin film type and a flexible type has been developed. In contrast, currently commercialized main displays are represented by LCD (Liguid Crystal Display) and AMOLED (Active Matrix Organic Light Emitting Diodes). However, in the case of LCD, there are problems in that the response time is not fast and flexible implementation is difficult, and in the case of AMOLED, there are weaknesses in that the lifespan is short and the mass production yield is not good.

On the other hand, a light emitting diode (Light Emitting Diode: LED) is a well-known semiconductor light emitting device that converts electric current into light. It has been used as a light source for display images of electronic devices including communication devices. Accordingly, a method for solving the above problems by implementing a display using the semiconductor light emitting device may be proposed.

In addition, recently, digital signage is developing in various forms, such as streaming high-resolution images using a large display or providing customized advertisements through interaction with users. Accordingly, a display using the semiconductor light emitting device can be applied even in the field of digital signage.

However, increasing the display size using one panel to realize a large screen with high resolution has limitations in manufacturing and cost of large panels. shall. In this case, if panels using semiconductor light emitting devices are used to implement high quality, the pitch is reduced (around tens of um), so the precision of the adjustment must be very high, and there are many difficulties in implementing this.

Accordingly, the present invention proposes a display device of a new structure based on a semiconductor light emitting device having a size of several to several tens of micrometers, but capable of adjusting the distance between panels.

SUMMARY OF THE INVENTION One object of the present invention is to provide a display device having a new structure that can control the distance between panels while supporting high quality.

Another object of the present invention is to implement a high-quality, large-area display without dark lines using a semiconductor light emitting device.

The display device according to the present invention implements a display device having a new structure by moving a plurality of frames and using an adjustment bracket for adjusting an interval between neighboring light source units.

As a specific example, the display device includes a plurality of frames, a plurality of light source units respectively disposed on one surface of the plurality of frames, the plurality of light sources including a substrate, a plurality of semiconductor light emitting devices mounted on the substrate, and the plurality of frames. It is mounted on the frame of the frame, and includes an elastic member for applying an elastic force to the neighboring frame, and an adjustment bracket disposed on the other surface of the plurality of frames. In order to move the plurality of frames to adjust the distance between the neighboring light sources, an adjustment hole is formed in the adjustment bracket in which at least one side is inclined with respect to a direction toward one surface of the plurality of frames.

In an embodiment, the length of one side of the light source unit is longer than the length of one side of the frame so that the edge of the light source unit protrudes from the edge of the frame. An edge of the protruding light source may be disposed to cover at least a portion of the elastic member.

In an embodiment, the elastic member is disposed on side surfaces of the plurality of frames. The elastic member may be formed to cover a gap formed between the neighboring light source units. The elastic member may be in contact with at least one of the neighboring light source units to emit heat.

In an embodiment, a frame hole corresponding to the adjustment hole is formed in the frame. A thread corresponding to the thread of the adjustment rod may be formed in the frame hole.

In an embodiment, the display device includes a fixing bracket coupled to the other surfaces of the plurality of frames. The fixing bracket may be fastened to an adjustment bracket disposed on a neighboring frame. The adjustment bracket and the fixing bracket may be respectively disposed on opposite sides of the frame. The adjustment bracket may be one of a plurality of adjustment brackets disposed on one side of the frame, and the fixing bracket may be one of a plurality of fixing brackets disposed on the other side of the frame.

In an embodiment, each of the plurality of light sources includes a plurality of semiconductor light emitting devices, a support substrate to which the plurality of semiconductor light emitting devices are coupled, and the plurality of semiconductor light emitting devices including a red sub-pixel, a green sub-pixel, and a blue sub-pixel, respectively. and a conversion layer for converting a color of light generated from at least some of the plurality of semiconductor light emitting devices to form a pixel. The semiconductor light emitting device corresponding to at least one of the red subpixel and the green subpixel may have a different light emitting area from the semiconductor light emitting device corresponding to the blue subpixel.

In the display device according to the present invention, a fine adjustment amount and a wide adjustment range, no shaking during adjustment, and very precise adjustment are possible by adjusting the distance between panels in an adjustment method using a screw thread using an eccentric adjustment rod Do.

In addition, by applying an elastic member through which heat is transferred to the side of the panel, a heat dissipation effect and light leakage prevention can be realized with a simple structure.

Furthermore, according to the structure proposed in the present invention, an ultra-high-definition panel having a very small pitch can be implemented as a seamless large screen without dark lines.

Also, in the present invention, since the light emitting areas of the red, green, and blue sub-pixels of the light source unit are different from each other, the driving current of each sub-pixel can be equally controlled.

In addition, in the present invention, the separated pixels can form a unit substrate, and the unit substrate is very small in size, which is very suitable for reducing the pixel interval of a large display such as a signage.

1 is a conceptual diagram illustrating an embodiment of a display device using a semiconductor light emitting device of the present invention.
FIG. 2 is a partially enlarged view of part A of FIG. 1 , and FIGS. 3A and 3B are cross-sectional views taken along lines BB and CC of FIG. 2 .
4 is a conceptual diagram illustrating the flip-chip type semiconductor light emitting device of FIG. 3 .
5A to 5C are conceptual views illustrating various forms of implementing colors in relation to a flip-chip type semiconductor light emitting device.
6 is a cross-sectional view illustrating a method of manufacturing a display device using a semiconductor light emitting device of the present invention.
7 is a perspective view illustrating another embodiment of a display device using the semiconductor light emitting device of the present invention.
FIG. 8 is a cross-sectional view taken along line DD of FIG. 7 ;
9 is a conceptual diagram illustrating the vertical semiconductor light emitting device of FIG. 8 .
10 is a conceptual diagram illustrating an embodiment of a digital signage using the semiconductor light emitting device of the present invention.
11 is a partial perspective view illustrating a part of a panel of FIG. 10 .
FIG. 12 is a cross-sectional view taken along line EE of FIG. 11 , and FIG. 13 is a cross-sectional view taken along line FF of FIG. 11 .
14 is a plan view of a semiconductor light emitting device package of the present invention, and FIG. 15 is a plan view of a support substrate.
16A and 16B are a rear perspective view and a front conceptual view for explaining an assembly structure in which the panel of FIG. 11 is assembled with a surrounding panel.
17 is an enlarged view of one frame of FIG. 16 .
18A and 18B are enlarged views and cross-sectional views of the adjustment bracket.
19 and 20 are respectively operation diagrams for adjusting the interval between panels in the present invention.

Hereinafter, the embodiments disclosed in the present specification will be described in detail with reference to the accompanying drawings, but the same or similar components are assigned the same reference numbers regardless of reference numerals, and redundant description thereof will be omitted. The suffixes "module" and "part" for components used in the following description are given or mixed in consideration of only the ease of writing the specification, and do not have distinct meanings or roles by themselves. In addition, in describing the embodiments disclosed in the present specification, if it is determined that detailed descriptions of related known technologies may obscure the gist of the embodiments disclosed in this specification, the detailed description thereof will be omitted. In addition, it should be noted that the accompanying drawings are only for easy understanding of the embodiments disclosed in the present specification, and should not be construed as limiting the technical spirit disclosed herein by the accompanying drawings.

It is also understood that when an element, such as a layer, region, or substrate, is referred to as being “on” another component, it may be directly present on the other element or intervening elements in between. There will be.

The display device described in this specification includes a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation system, and a slate PC. , Tablet PC, Ultra Book, digital TV, desktop computer, and the like. However, it will be readily apparent to those skilled in the art that the configuration according to the embodiment described in the present specification may be applied to a display capable device even in a new product form to be developed later.

1 is a conceptual diagram illustrating an embodiment of a display device using a semiconductor light emitting device of the present invention.

As illustrated, information processed by the control unit of the display apparatus 100 may be displayed using a flexible display.

The flexible display includes a display that can be bent, bent, twisted, folded, or rolled by an external force. For example, the flexible display may be a display manufactured on a thin and flexible substrate that can be bent, bent, folded, or rolled like paper while maintaining the display characteristics of a conventional flat panel display.

In a state in which the flexible display is not bent (eg, a state having an infinite radius of curvature, hereinafter referred to as a first state), the display area of the flexible display becomes a flat surface. In a state bent by an external force in the first state (eg, a state having a finite radius of curvature, hereinafter referred to as a second state), the display area may be a curved surface. As shown, the information displayed in the second state may be visual information output on the curved surface. Such visual information is implemented by independently controlling the emission of sub-pixels arranged in a matrix form. The unit pixel means a minimum unit for realizing one color.

The unit pixel of the flexible display may be implemented by a semiconductor light emitting device. In the present invention, a light emitting diode (LED) is exemplified as a type of a semiconductor light emitting device that converts current into light. The light emitting diode is formed to have a small size, so that it can serve as a unit pixel even in the second state.

Hereinafter, a flexible display implemented using the light emitting diode will be described in more detail with reference to the drawings.

2 is a partially enlarged view of part A of FIG. 1, FIGS. 3A and 3B are cross-sectional views taken along lines B-B and C-C of FIG. 2, and FIG. 4 is a conceptual diagram showing the flip-chip type semiconductor light emitting device of FIG. 3A, 5A to 5C are conceptual views illustrating various forms of implementing colors in relation to a flip-chip type semiconductor light emitting device.

2, 3A, and 3B , the display device 100 using a passive matrix (PM) type semiconductor light emitting device is exemplified as the display device 100 using a semiconductor light emitting device. However, the examples described below are also applicable to an active matrix (AM) type semiconductor light emitting device.

The display device 100 includes a substrate 110 , a first electrode 120 , a conductive adhesive layer 130 , a second electrode 140 , and a plurality of semiconductor light emitting devices 150 .

The substrate 110 may be a flexible substrate. For example, to implement a flexible display device, the substrate 110 may include glass or polyimide (PI). In addition, any material such as polyethylene naphthalate (PEN) or polyethylene terephthalate (PET) may be used as long as it has insulating properties and is flexible. In addition, the substrate 110 may be made of either a transparent material or an opaque material.

The substrate 110 may be a wiring substrate on which the first electrode 120 is disposed, and thus the first electrode 120 may be located on the substrate 110 .

As shown, the insulating layer 160 may be disposed on the substrate 110 on which the first electrode 120 is positioned, and the auxiliary electrode 170 may be positioned on the insulating layer 160 . In this case, a state in which the insulating layer 160 is laminated on the substrate 110 may be a single wiring board. More specifically, the insulating layer 160 is made of an insulating and flexible material such as polyimide (PI, Polyimide), PET, PEN, etc., and is integrally formed with the substrate 110 to form a single substrate.

The auxiliary electrode 170 is an electrode that electrically connects the first electrode 120 and the semiconductor light emitting device 150 , is located on the insulating layer 160 , and is disposed to correspond to the position of the first electrode 120 . For example, the auxiliary electrode 170 may have a dot shape and may be electrically connected to the first electrode 120 by an electrode hole 171 penetrating the insulating layer 160 . The electrode hole 171 may be formed by filling the via hole with a conductive material.

Referring to the drawings, the conductive adhesive layer 130 is formed on one surface of the insulating layer 160 , but the present invention is not necessarily limited thereto. For example, a layer performing a specific function is formed between the insulating layer 160 and the conductive adhesive layer 130 , or the conductive adhesive layer 130 is disposed on the substrate 110 without the insulating layer 160 . is also possible In a structure in which the conductive adhesive layer 130 is disposed on the substrate 110 , the conductive adhesive layer 130 may serve as an insulating layer.

The conductive adhesive layer 130 may be a layer having adhesiveness and conductivity, and for this purpose, a material having conductivity and a material having adhesiveness may be mixed in the conductive adhesive layer 130 . In addition, the conductive adhesive layer 130 has flexibility, thereby enabling a flexible function in the display device.

For this example, the conductive adhesive layer 130 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. The conductive adhesive layer 130 may be configured as a layer that allows electrical interconnection in the Z direction passing through the thickness, but has electrical insulation in the horizontal X-Y direction. Accordingly, the conductive adhesive layer 130 may be referred to as a Z-axis conductive layer (however, hereinafter referred to as a 'conductive adhesive layer').

The anisotropic conductive film is a film in which an anisotropic conductive medium is mixed with an insulating base member, and when heat and pressure are applied, only a specific portion has conductivity by the anisotropic conductive medium. Hereinafter, it will be described that heat and pressure are applied to the anisotropic conductive film, but other methods are also possible in order for the anisotropic conductive film to have partial conductivity. In this method, for example, only one of the heat and pressure may be applied or UV curing may be performed.

In addition, the anisotropic conductive medium may be, for example, conductive balls or conductive particles. As shown, in this example, the anisotropic conductive film is a film in which conductive balls are mixed with an insulating base member, and when heat and pressure are applied, only a specific portion has conductivity by the conductive balls. The anisotropic conductive film may be in a state in which the core of the conductive material contains a plurality of particles covered by an insulating film made of a polymer material. . At this time, the shape of the core may be deformed to form a layer in contact with each other in the thickness direction of the film. As a more specific example, heat and pressure are applied as a whole to the anisotropic conductive film, and an electrical connection in the Z-axis direction is partially formed by a height difference of a counterpart adhered by the anisotropic conductive film.

As another example, the anisotropic conductive film may be in a state in which an insulating core contains a plurality of particles coated with a conductive material. In this case, the conductive material is deformed (compressed) in the portion to which heat and pressure are applied, so that it has conductivity in the thickness direction of the film. As another example, a form in which the conductive material penetrates the insulating base member in the Z-axis direction to have conductivity in the thickness direction of the film is also possible. In this case, the conductive material may have a pointed end.

As shown, the anisotropic conductive film may be a fixed array anisotropic conductive film (ACF) in which conductive balls are inserted into one surface of the insulating base member. More specifically, the insulating base member is formed of a material having an adhesive property, and the conductive balls are intensively disposed on the bottom of the insulating base member, and when heat and pressure are applied from the base member, it is deformed together with the conductive balls. Accordingly, it has conductivity in the vertical direction.

However, the present invention is not necessarily limited thereto, and the anisotropic conductive film has a form in which conductive balls are randomly mixed in an insulating base member, or is composed of a plurality of layers and conductive balls are arranged on one layer (double- ACF) are all possible.

The anisotropic conductive paste is a combination of a paste and a conductive ball, and may be a paste in which a conductive ball is mixed with an insulating and adhesive base material. Also, a solution containing conductive particles may be a solution containing conductive particles or nano particles.

Referring back to the drawing, the second electrode 140 is spaced apart from the auxiliary electrode 170 and is positioned on the insulating layer 160 . That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 in which the auxiliary electrode 170 and the second electrode 140 are located.

After the conductive adhesive layer 130 is formed in the state where the auxiliary electrode 170 and the second electrode 140 are positioned on the insulating layer 160, the semiconductor light emitting device 150 is connected in a flip-chip form by applying heat and pressure. In this case, the semiconductor light emitting device 150 is electrically connected to the first electrode 120 and the second electrode 140 .

Referring to FIG. 4 , the semiconductor light emitting device may be a flip chip type light emitting device.

For example, the semiconductor light emitting device includes a p-type electrode 156 , a p-type semiconductor layer 155 on which the p-type electrode 156 is formed, an active layer 154 formed on the p-type semiconductor layer 155 , an active layer ( It includes an n-type semiconductor layer 153 formed on the 154 , and an n-type electrode 152 spaced apart from the p-type electrode 156 in the horizontal direction on the n-type semiconductor layer 153 . In this case, the p-type electrode 156 may be electrically connected to the auxiliary electrode 170 and the conductive adhesive layer 130 , and the n-type electrode 152 may be electrically connected to the second electrode 140 .

Referring back to FIGS. 2, 3A, and 3B , the auxiliary electrode 170 is formed to be elongated in one direction, so that one auxiliary electrode may be electrically connected to the plurality of semiconductor light emitting devices 150 . For example, p-type electrodes of left and right semiconductor light emitting devices with respect to the auxiliary electrode may be electrically connected to one auxiliary electrode.

More specifically, the semiconductor light emitting device 150 is press-fitted into the conductive adhesive layer 130 by heat and pressure, through which the p-type electrode 156 and the auxiliary electrode 170 of the semiconductor light emitting device 150 are pressed. Only a portion and a portion between the n-type electrode 152 and the second electrode 140 of the semiconductor light emitting device 150 have conductivity, and there is no press-fitting of the semiconductor light emitting device in the remaining portion, so that the semiconductor light emitting device does not have conductivity. As described above, the conductive adhesive layer 130 not only interconnects the semiconductor light emitting device 150 and the auxiliary electrode 170 and between the semiconductor light emitting device 150 and the second electrode 140 , but also forms an electrical connection.

In addition, the plurality of semiconductor light emitting devices 150 constitute a light emitting device array, and the phosphor layer 180 is formed on the light emitting device array.

The light emitting device array may include a plurality of semiconductor light emitting devices having different luminance values. Each semiconductor light emitting device 150 constitutes a unit pixel and is electrically connected to the first electrode 120 . For example, there may be a plurality of first electrodes 120 , the semiconductor light emitting devices may be arranged in, for example, several columns, and the semiconductor light emitting devices in each column may be electrically connected to any one of the plurality of first electrodes.

In addition, since the semiconductor light emitting devices are connected in a flip-chip form, semiconductor light emitting devices grown on a transparent dielectric substrate can be used. In addition, the semiconductor light emitting devices may be, for example, nitride semiconductor light emitting devices. Since the semiconductor light emitting device 150 has excellent luminance, individual unit pixels can be configured even with a small size.

As illustrated, barrier ribs 190 may be formed between the semiconductor light emitting devices 150 . In this case, the partition wall 190 may serve to separate individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 130 . For example, by inserting the semiconductor light emitting device 150 into the anisotropic conductive film, the base member of the anisotropic conductive film may form the barrier rib.

In addition, when the base member of the anisotropic conductive film is black, the barrier rib 190 may have reflective properties and increase contrast even without a separate black insulator.

As another example, a reflective barrier rib may be separately provided as the barrier rib 190 . In this case, the barrier rib 190 may include a black or white insulator depending on the purpose of the display device. When the barrier rib of the white insulator is used, it is possible to increase reflectivity, and when the barrier rib of the black insulator is used, it is possible to have reflective properties and increase the contrast.

The phosphor layer 180 may be located on the outer surface of the semiconductor light emitting device 150 . For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and the phosphor layer 180 performs a function of converting the blue (B) light into a color of a unit pixel. The phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 constituting an individual pixel.

That is, a red phosphor 181 capable of converting blue light into red (R) light may be stacked on the blue semiconductor light emitting device 151 at a position forming a unit pixel of red color, and a position constituting a unit pixel of green color In , a green phosphor 182 capable of converting blue light into green (G) light may be stacked on the blue semiconductor light emitting device 151 . In addition, only the blue semiconductor light emitting device 151 may be used alone in the portion constituting the blue unit pixel. In this case, unit pixels of red (R), green (G), and blue (B) may form one pixel. More specifically, a phosphor of one color may be stacked along each line of the first electrode 120 . Accordingly, one line in the first electrode 120 may be an electrode for controlling one color. That is, red (R), green (G), and blue (B) may be sequentially disposed along the second electrode 140 , thereby realizing a unit pixel.

However, the present invention is not necessarily limited thereto, and instead of the phosphor, the semiconductor light emitting device 150 and the quantum dot (QD) are combined to implement unit pixels of red (R), green (G), and blue (B). there is.

In addition, a black matrix 191 may be disposed between each of the phosphor layers to improve contrast. That is, the black matrix 191 may improve contrast of light and dark.

However, the present invention is not necessarily limited thereto, and other structures for implementing blue, red, and green colors may be applied.

Referring to FIG. 5A , each of the semiconductor light emitting devices 150 mainly uses gallium nitride (GaN), and indium (In) and/or aluminum (Al) are added together to emit a variety of light including blue light. It can be implemented as a device.

In this case, the semiconductor light emitting device 150 may be a red, green, and blue semiconductor light emitting device to form a sub-pixel, respectively. For example, red, green, and blue semiconductor light emitting devices R, G, and B are alternately arranged, and unit pixels of red, green, and blue colors by the red, green and blue semiconductor light emitting devices The pixels form one pixel, through which a full-color display can be realized.

Referring to FIG. 5B , the semiconductor light emitting device may include a white light emitting device W in which a yellow phosphor layer is provided for each device. In this case, a red phosphor layer 181 , a green phosphor layer 182 , and a blue phosphor layer 183 may be provided on the white light emitting device W to form a unit pixel. In addition, a unit pixel may be formed on the white light emitting device W by using a color filter in which red, green, and blue are repeated.

Referring to FIG. 5C , a structure in which a red phosphor layer 181 , a green phosphor layer 182 , and a blue phosphor layer 183 are provided on the ultraviolet light emitting device UV is also possible. In this way, the semiconductor light emitting device can be used in the entire region not only for visible light but also for ultraviolet (UV) light, and can be extended in the form of a semiconductor light emitting device in which ultraviolet (UV) can be used as an excitation source of the upper phosphor. .

Referring back to this example, the semiconductor light emitting device 150 is positioned on the conductive adhesive layer 130 to constitute a unit pixel in the display device. Since the semiconductor light emitting device 150 has excellent luminance, individual unit pixels can be configured even with a small size. The size of the individual semiconductor light emitting device 150 may have a side length of 80 μm or less, and may be a rectangular or square device. In the case of a rectangle, the size may be 20X80㎛ or less.

In addition, even when a square semiconductor light emitting device 150 having a side length of 10 μm is used as a unit pixel, sufficient brightness to form a display device appears. Accordingly, for example, when the unit pixel is a rectangular pixel having one side of 600 μm and the other side of 300 μm, the distance between the semiconductor light emitting devices is relatively large. Accordingly, in this case, it is possible to implement a flexible display device having HD image quality.

The display device using the semiconductor light emitting device described above can be manufactured by a new type of manufacturing method. Hereinafter, the manufacturing method will be described with reference to FIG. 6 .

6 is a cross-sectional view illustrating a method of manufacturing a display device using a semiconductor light emitting device of the present invention.

Referring to this figure, first, the conductive adhesive layer 130 is formed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are positioned. An insulating layer 160 is laminated on the first substrate 110 to form one substrate (or wiring board), and the wiring substrate includes a first electrode 120 , an auxiliary electrode 170 , and a second electrode 140 . this is placed In this case, the first electrode 120 and the second electrode 140 may be disposed in a mutually orthogonal direction. In addition, in order to implement a flexible display device, the first substrate 110 and the insulating layer 160 may each include glass or polyimide (PI).

The conductive adhesive layer 130 may be implemented by, for example, an anisotropic conductive film, and for this purpose, the anisotropic conductive film may be applied to the substrate on which the insulating layer 160 is positioned.

Next, the second substrate 112 corresponding to the positions of the auxiliary electrode 170 and the second electrodes 140 and on which the plurality of semiconductor light emitting devices 150 constituting individual pixels are located is formed with the semiconductor light emitting device 150 . ) is disposed to face the auxiliary electrode 170 and the second electrode 140 .

In this case, the second substrate 112 is a growth substrate on which the semiconductor light emitting device 150 is grown, and may be a sapphire substrate or a silicon substrate.

When the semiconductor light emitting device is formed in units of wafers, the semiconductor light emitting device can be effectively used in a display device by having an interval and a size that can form a display device.

Then, the wiring board and the second board 112 are thermocompression-bonded. For example, the wiring substrate and the second substrate 112 may be thermocompression-bonded by applying an ACF press head. The wiring substrate and the second substrate 112 are bonded by the thermocompression bonding. Due to the properties of the anisotropic conductive film having conductivity by thermocompression bonding, only the portion between the semiconductor light emitting device 150 and the auxiliary electrode 170 and the second electrode 140 has conductivity, and through this, the electrodes and the semiconductor light emission. The device 150 may be electrically connected. At this time, the semiconductor light emitting device 150 is inserted into the anisotropic conductive film, and through this, a barrier rib may be formed between the semiconductor light emitting devices 150 .

Then, the second substrate 112 is removed. For example, the second substrate 112 may be removed using a laser lift-off (LLO) method or a chemical lift-off (CLO) method.

Finally, the second substrate 112 is removed to expose the semiconductor light emitting devices 150 to the outside. If necessary, a transparent insulating layer (not shown) may be formed by coating silicon oxide (SiOx) or the like on the wiring board to which the semiconductor light emitting device 150 is coupled.

In addition, the method may further include forming a phosphor layer on one surface of the semiconductor light emitting device 150 . For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and a red or green phosphor for converting the blue (B) light into the color of the unit pixel is the blue semiconductor light emitting device. A layer may be formed on one surface of the device.

The manufacturing method or structure of the display device using the semiconductor light emitting device described above may be modified in various forms. As an example, a vertical semiconductor light emitting device may also be applied to the display device described above. Hereinafter, a vertical structure will be described with reference to FIGS. 5 and 6 .

In addition, in the modification or embodiment described below, the same or similar reference numerals are assigned to the same or similar components as those of the preceding example, and the description is replaced with the first description.

7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention, FIG. 8 is a cross-sectional view taken along line D-D of FIG. 7 , and FIG. 9 is a conceptual view showing the vertical semiconductor light emitting device of FIG. 8 am.

Referring to the drawings, the display device may be a display device using a passive matrix (PM) type vertical semiconductor light emitting device.

The display device includes a substrate 210 , a first electrode 220 , a conductive adhesive layer 230 , a second electrode 240 , and a plurality of semiconductor light emitting devices 250 .

The substrate 210 is a wiring substrate on which the first electrode 220 is disposed, and may include polyimide (PI) to implement a flexible display device. In addition, any material that has insulating properties and is flexible may be used.

The first electrode 220 is positioned on the substrate 210 and may be formed as a bar-shaped electrode long in one direction. The first electrode 220 may serve as a data electrode.

The conductive adhesive layer 230 is formed on the substrate 210 on which the first electrode 220 is positioned. Like a display device to which a flip chip type light emitting element is applied, the conductive adhesive layer 230 is an anisotropic conductive film (ACF), an anisotropic conductive paste, and a solution containing conductive particles. ), and so on. However, in this embodiment as well, a case in which the conductive adhesive layer 230 is implemented by an anisotropic conductive film is exemplified.

After the anisotropic conductive film is positioned on the substrate 210 in a state where the first electrode 220 is positioned, when the semiconductor light emitting device 250 is connected by applying heat and pressure, the semiconductor light emitting device 250 becomes the first It is electrically connected to the electrode 220 . In this case, the semiconductor light emitting device 250 is preferably disposed on the first electrode 220 .

The electrical connection is created because, as described above, when heat and pressure are applied to the anisotropic conductive film, it partially has conductivity in the thickness direction. Accordingly, the anisotropic conductive film is divided into a conductive portion and a non-conductive portion in the thickness direction.

In addition, since the anisotropic conductive film contains an adhesive component, the conductive adhesive layer 230 implements not only electrical connection but also mechanical bonding between the semiconductor light emitting device 250 and the first electrode 220 .

As described above, the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230 and constitutes individual pixels in the display device through this. Since the semiconductor light emitting device 250 has excellent luminance, individual unit pixels can be configured even with a small size. The size of the individual semiconductor light emitting device 250 may have a side length of 80 μm or less, and may be a rectangular or square device. In the case of a rectangle, the size may be 20X80㎛ or less.

The semiconductor light emitting device 250 may have a vertical structure.

A plurality of second electrodes 240 disposed in a direction crossing the longitudinal direction of the first electrode 220 and electrically connected to the vertical semiconductor light emitting device 250 are positioned between the vertical semiconductor light emitting devices.

Referring to FIG. 9 , the vertical semiconductor light emitting device includes a p-type electrode 256 , a p-type semiconductor layer 255 formed on the p-type electrode 256 , and an active layer 254 formed on the p-type semiconductor layer 255 . ), an n-type semiconductor layer 253 formed on the active layer 254 , and an n-type electrode 252 formed on the n-type semiconductor layer 253 . In this case, the lower p-type electrode 256 may be electrically connected to the first electrode 220 and the conductive adhesive layer 230 , and the upper n-type electrode 252 may be a second electrode 240 to be described later. ) can be electrically connected to. The vertical semiconductor light emitting device 250 has a great advantage in that it is possible to reduce the chip size because electrodes can be arranged up and down.

Referring back to FIG. 8 , a phosphor layer 280 may be formed on one surface of the semiconductor light emitting device 250 . For example, the semiconductor light emitting device 250 is a blue semiconductor light emitting device 251 that emits blue (B) light, and a phosphor layer 280 for converting the blue (B) light into the color of a unit pixel is provided. can be In this case, the phosphor layer 280 may be a red phosphor 281 and a green phosphor 282 constituting individual pixels.

That is, a red phosphor 281 capable of converting blue light into red (R) light may be stacked on the blue semiconductor light emitting device 251 at a position forming a unit pixel of red color, and a position constituting a unit pixel of green color In , a green phosphor 282 capable of converting blue light into green (G) light may be stacked on the blue semiconductor light emitting device 251 . In addition, only the blue semiconductor light emitting device 251 may be used alone in the portion constituting the blue unit pixel. In this case, unit pixels of red (R), green (G), and blue (B) may form one pixel.

However, the present invention is not necessarily limited thereto, and as described above in a display device to which a flip chip type light emitting device is applied, other structures for implementing blue, red, and green colors may be applied.

Referring back to the present embodiment, the second electrode 240 is positioned between the semiconductor light emitting devices 250 and is electrically connected to the semiconductor light emitting devices 250 . For example, the semiconductor light emitting devices 250 may be arranged in a plurality of columns, and the second electrode 240 may be positioned between the columns of the semiconductor light emitting devices 250 .

Since the distance between the semiconductor light emitting devices 250 constituting individual pixels is sufficiently large, the second electrode 240 may be positioned between the semiconductor light emitting devices 250 .

The second electrode 240 may be formed as a bar-shaped electrode long in one direction, and may be disposed in a direction perpendicular to the first electrode.

Also, the second electrode 240 and the semiconductor light emitting device 250 may be electrically connected to each other by a connection electrode protruding from the second electrode 240 . More specifically, the connection electrode may be an n-type electrode of the semiconductor light emitting device 250 . For example, the n-type electrode is formed as an ohmic electrode for ohmic contact, and the second electrode covers at least a portion of the ohmic electrode by printing or deposition. Through this, the second electrode 240 and the n-type electrode of the semiconductor light emitting device 250 may be electrically connected.

As illustrated, the second electrode 240 may be positioned on the conductive adhesive layer 230 . In some cases, a transparent insulating layer (not shown) including silicon oxide (SiOx) may be formed on the substrate 210 on which the semiconductor light emitting device 250 is formed. When the second electrode 240 is positioned after the transparent insulating layer is formed, the second electrode 240 is positioned on the transparent insulating layer. In addition, the second electrode 240 may be formed to be spaced apart from the conductive adhesive layer 230 or the transparent insulating layer.

If a transparent electrode such as indium tin oxide (ITO) is used to position the second electrode 240 on the semiconductor light emitting device 250, the ITO material has a problem of poor adhesion to the n-type semiconductor layer. there is. Accordingly, the present invention has the advantage of not using a transparent electrode such as ITO by locating the second electrode 240 between the semiconductor light emitting devices 250 . Therefore, it is possible to improve light extraction efficiency by using a conductive material having good adhesion to the n-type semiconductor layer as a horizontal electrode without being limited by the selection of a transparent material.

As illustrated, a barrier rib 290 may be positioned between the semiconductor light emitting devices 250 . That is, a barrier rib 290 may be disposed between the vertical semiconductor light emitting devices 250 to isolate the semiconductor light emitting devices 250 constituting individual pixels. In this case, the partition wall 290 may serve to separate individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 230 . For example, by inserting the semiconductor light emitting device 250 into the anisotropic conductive film, the base member of the anisotropic conductive film may form the partition wall.

In addition, when the base member of the anisotropic conductive film is black, the barrier rib 290 may have reflective properties and increase contrast even without a separate black insulator.

As another example, as the barrier rib 190 , a reflective barrier rib may be separately provided. The barrier rib 290 may include a black or white insulator depending on the purpose of the display device.

If the second electrode 240 is directly positioned on the conductive adhesive layer 230 between the semiconductor light emitting device 250 , the barrier rib 290 is formed between the vertical semiconductor light emitting device 250 and the second electrode 240 . can be located between Accordingly, individual unit pixels can be configured with a small size by using the semiconductor light emitting device 250 , and the distance between the semiconductor light emitting devices 250 is relatively large enough to connect the second electrode 240 to the semiconductor light emitting device 250 . ), and there is an effect of realizing a flexible display device having HD picture quality.

Also, as illustrated, a black matrix 291 may be disposed between each phosphor to improve contrast. That is, the black matrix 291 may improve contrast of light and dark.

As described above, the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230 and constitutes individual pixels in the display device through this. Since the semiconductor light emitting device 250 has excellent luminance, individual unit pixels can be configured even with a small size. Accordingly, a full-color display in which unit pixels of red (R), green (G), and blue (B) constitute one pixel may be implemented by the semiconductor light emitting device.

In the display using the semiconductor light emitting device of the present invention described above, the semiconductor light emitting device grown on the growth substrate is transferred to the wiring board using an anisotropic conductive film (ACF). However, this method has disadvantages in that it is difficult to secure manufacturing reliability and the manufacturing cost is high.

In particular, in the case of digital signage, since a flexible property is not required, a different approach is required for a display using a semiconductor light emitting device.

Hereinafter, in the present invention, in order to overcome the technical difficulties described above and to realize a high-resolution display based on a microminiature micro light emitting diode, a pixel structure for a display based on a micro blue light emitting diode composed of several to several tens of micrometers in a new way suggest

In addition, in digital signage, multi-panel can be used to realize a large screen, but as the resolution increases, the pitch decreases (around tens of um), so the precision of adjustment between panels must be very high, and there are many difficulties in implementing this. In addition, it is difficult to implement a multi-panel in which light leakage does not occur due to errors in processing and manufacturing of parts and errors occurring during assembly. In order to overcome this problem, the present invention proposes a structure capable of easily adjusting the distance between panels when assembling a multi-panel.

Hereinafter, a display device according to another embodiment of the present invention utilizing a multi-panel will be described in detail with reference to the drawings, taking digital signage as an example.

10 is a conceptual diagram illustrating an embodiment of digital signage using a semiconductor light emitting device of the present invention, FIG. 11 is a partial perspective view for explaining a part of a panel of FIG. 10, and FIG. 12 is a line E-E of FIG. 13 is a cross-sectional view taken along line F-F of FIG. 11 , FIG. 14 is a plan view of a semiconductor light emitting device package of the present invention, and FIG. 15 is a plan view of a support substrate.

In addition, FIGS. 16A and 16B are a rear perspective view and a front conceptual view for explaining an assembly structure in which the panel of FIG. 11 is assembled with a surrounding panel, and FIG. 17 is an enlarged view of one frame of FIG. 16, FIGS. 18A and 18A and FIG. 18b is an enlarged view and cross-sectional view of the adjustment bracket, and FIGS. 19 and 20 are operation diagrams for adjusting the distance between panels in the present invention, respectively.

First, as shown in FIGS. 10, 11, 12, 13, 14 and 15, a digital signage using a passive matrix (PM) type semiconductor light emitting device as a display device using a semiconductor light emitting device. (DS) is illustrated. However, the examples described below are also applicable to an active matrix (AM) type semiconductor light emitting device.

The display device includes a display panel DP and a case DC, and the display panel DP includes a plurality of light sources 1000 .

Each of the plurality of light sources 1000 is a single display panel and is disposed on the front side of the case DC to display visual information. In addition to supporting the plurality of light sources 1000 , the case DC may be configured to form a space in which electronic components are accommodated.

The plurality of light source units 1000 may be formed in a rectangular shape and may be sequentially disposed in column and row directions. In this case, each of the plurality of light sources may include a plurality of RGB pixels. The pitch of the plurality of RGB pixels is constant, and the pitch may be maintained even between neighboring light sources, for example, the first light source unit 1000a and the second light source unit 1000b. In addition, the plurality of light sources may be disposed so that there is no gap between the plurality of light sources to prevent light leakage.

In this example, a mechanism for implementing a structure without such a pitch and a gap is disclosed. Prior to this, the structure of the plurality of light sources 1000 will be described in detail.

11 , 12 , 13 , 14 and 15 , the plurality of light source units 1000 includes a substrate 1010 and a plurality of semiconductor light emitting device packages 1050 , respectively.

The substrate 1010 may be a wiring substrate on which the first electrode 1020 and the second electrode 1040 are disposed. Accordingly, the first electrode 1020 and the second electrode 1040 may be positioned on the substrate 1010 . In this case, the first electrode 1020 and the second electrode 1040 may be wiring electrodes.

The substrate 1010 may be formed of a material that is insulating but is not flexible. In addition, the substrate 1010 may be made of either a transparent material or an opaque material.

Referring to the drawings, the semiconductor light emitting device package 1050 is coupled to one surface of the substrate 1010 . For example, the electrode of the semiconductor light emitting device package 1050 may be coupled to the wiring electrode by soldering or the like. In this case, the conductive adhesive layer described in the previous embodiment may be excluded.

The plurality of semiconductor light emitting device packages 1050 are chamfered on a wafer in pixel units, and one semiconductor light emitting device package 1050 includes a plurality of semiconductor light emitting devices 1051 , 1052 , 1053 , a conversion layer 1080 and a support. A substrate 1090 is provided.

Each of the plurality of semiconductor light emitting devices 1051, 1052, and 1053 is mainly made of gallium nitride (GaN), and indium (In) and/or aluminum (Al) are added together to emit blue light. can be implemented.

For this example, the plurality of semiconductor light emitting devices 1050 may be gallium nitride thin films formed in various layers, such as n-Gan, p-Gan, AlGaN, and InGan. However, the present invention is not necessarily limited thereto, and the plurality of semiconductor light emitting devices 1050 may be implemented as light emitting devices emitting green light.

As a more specific example, the semiconductor light emitting device 1050 may be a flip chip type light emitting device. The semiconductor light emitting device 1050 includes a first conductivity type electrode 1156 , a first conductivity type semiconductor layer 1155 on which the first conductivity type electrode 1156 is formed, and a first conductivity type semiconductor layer 1155 formed on the first conductivity type semiconductor layer 1155 . The active layer 1154 , the second conductivity type semiconductor layer 1153 formed on the active layer 1154 , and the second conductivity type electrode 1156 spaced apart from the first conductivity type electrode 1156 in the horizontal direction on the second conductivity type semiconductor layer 1153 . A type electrode 1152 is included. In this case, the first conductive electrode 1156 and the first conductive semiconductor layer 1155 may be a p-type electrode and a p-type semiconductor layer, and the second conductive electrode 1152 and the second conductive semiconductor layer 1152 . The type semiconductor layer 1153 may be an n-type electrode and an n-type semiconductor layer. Also, the active layer 1154 may be formed between the p-type semiconductor layer and the n-type semiconductor layer.

As shown, the plurality of semiconductor light emitting devices 1051 , 1052 , and 1053 constitute three sub-pixels, and these are combined to constitute one RGB pixel. That is, the plurality of semiconductor light emitting devices 1051 , 1052 , and 1053 form a red sub-pixel RSP, a green sub-pixel GSP, and a blue sub-pixel BSP, respectively. In this case, the semiconductor light emitting devices 1051 and 1052 corresponding to at least one of the red sub-pixel RSP and the green sub-pixel GSP include the semiconductor light emitting device 1053 corresponding to the blue sub-pixel BSP, and They have different luminous areas.

For example, the plurality of semiconductor light emitting devices are coupled to the support substrate 1090 to form one semiconductor light emitting device package 1050, a first semiconductor light emitting device 1051, a second semiconductor light emitting device 1052, and A third semiconductor light emitting device 1053 may be included. Only the first semiconductor light emitting device 1051 , the second semiconductor light emitting device 1052 , and the third semiconductor light emitting device 1053 are provided in one package, and these may be blue semiconductor light emitting devices having different light emitting areas. However, the present invention is not necessarily limited thereto, and the first semiconductor light emitting device 1051 , the second semiconductor light emitting device 1052 , and the third semiconductor light emitting device 1053 have the same size as each other and emit light of the same size. can have area.

However, in the present embodiment, the first semiconductor light emitting device 1051 , the second semiconductor light emitting device 1052 , and the third semiconductor light emitting device 1053 are formed in different sizes to form the red sub-pixel RSP and the green sub-pixel. (GSP) and the blue sub-pixel (BSP) are illustrated respectively. For this example, the n-type semiconductor layer of one semiconductor light emitting device may have a top surface different from that of the n-type semiconductor layer of the other semiconductor light emitting device. The upper surface is a surface furthest from the wiring board, and may be an emission surface from which light is emitted from the semiconductor light emitting device. That is, each of the n-type semiconductor layers is formed as a rectangular parallelepiped, but the first semiconductor light emitting device 1051 , the second semiconductor light emitting device 1052 , and the third semiconductor light emitting device 1053 have upper and lower surfaces having different areas. .

However, an undoped semiconductor layer may be formed on the upper surface of the n-type semiconductor layer, and in this case, the upper surface of the undoped semiconductor layer furthest from the wiring substrate is light emitted from the semiconductor light emitting device. It can be an exit surface. Furthermore, microgrooves may be formed on the upper surface of the undoped semiconductor layer by roughing.

Also, as illustrated, the p-type semiconductor layer of any one of the plurality of semiconductor light emitting devices 1051 , 1052 , and 1053 may have a shape different from that of the other p-type semiconductor layer. As an example, the second semiconductor light emitting device 1052 and the third semiconductor light emitting device 1053 are each formed as a rectangular parallelepiped, but the first semiconductor light emitting device 1051 may have a different shape. In this case, the upper and lower surfaces of the second semiconductor light emitting device 1052 and the third semiconductor light emitting device 1053 may be formed in different areas.

The p-type semiconductor layer of the semiconductor light emitting device corresponding to the green sub-pixel GSP has a larger area than the p-type semiconductor layer of the semiconductor light emitting device corresponding to the blue sub-pixel BSP. The p-type semiconductor layer of the semiconductor light emitting device corresponding to the red sub-pixel RSP has a shape extending in both directions perpendicular to each other. For example, the p-type semiconductor layer may be formed in a shape in which two cuboids are integrated. Specifically, the p-type semiconductor layer of the first semiconductor light emitting device 1051 includes a base portion 1155a extending in parallel with the p-type semiconductor layer of the second semiconductor light emitting device 1052, and the base portion 1155a. may include a protrusion 1155b protruding in a direction perpendicular to the p-type semiconductor layer of the second semiconductor light emitting device. Accordingly, the p-type semiconductor layer of the first semiconductor light emitting device 1051 may have the largest area.

Since the p-type semiconductor layer has the above-described shape, the active layer 1154 overlapping the p-type semiconductor layer also includes the first semiconductor light emitting device 1051, the second semiconductor light emitting device 1052, and the third semiconductor light emitting device ( 1053) may have a larger area in the order of Through this, the first semiconductor light emitting device 1051 , the second semiconductor light emitting device 1052 , and the third semiconductor light emitting device 1053 have different light emitting areas.

As described above, in this example, since the red light-emitting area with low light efficiency is the largest, the amount of red light is sufficient even if the driving currents of each sub-pixel are the same. Although the efficiency is better than that of red, even in the case of green, which is lower than blue, a sufficient amount of light is secured even when the driving current is set to be the same as that of the blue pixel. In this example, since the conversion layer and the blue semiconductor light emitting device are used, the light efficiency is different for each sub-pixel.

As described above, the semiconductor light emitting device package 1050 may include a conversion layer 1080 disposed to cover the plurality of semiconductor light emitting devices 1051 , 1052 , and 1053 . For example, the semiconductor light emitting devices are blue semiconductor light emitting devices that emit blue (B) light, and the conversion layer 1080 converts the blue (B) light into colors such as yellow, white, red, and green. carry out In this case, the colors converted in each pixel may be different from each other. As an example, it is also possible to convert blue light into yellow in a green pixel, and convert blue light into a wavelength in which red and yellow are mixed in a red pixel.

As shown, the conversion layer 1080 includes a plurality of phosphor units 1081 and 1082 for converting a wavelength of light. In this case, a barrier rib 1084 may be formed between the plurality of phosphor units 1081 and 1082 .

For example, the plurality of phosphor parts 1081 and 1082 may include a first phosphor part 2081 disposed at a position forming a red pixel and a second phosphor part 1082 disposed at a position forming a green pixel. can In this case, in each of the first phosphor part 1081 and the second phosphor part 1082 , a red phosphor capable of converting the blue light of the blue semiconductor light emitting devices 1051 and 1052 into red light or green light and a green light A phosphor may be provided. In this case, a light-transmitting material 1083 that does not convert a color may be disposed at a position constituting the blue pixel. The light-transmitting material 1083 is a material having high transmittance in the visible ray region, and for example, an epoxy-based photoresist (PR), polydimethylsiloxane (PDMS), or resin may be used.

As another example, the first phosphor part 1081 and the second phosphor part 1082 may be provided with a yellow phosphor capable of converting blue light from the blue semiconductor light emitting devices 1051 and 1052 into yellow light or white light. there is. In this case, yellow light or white light may be converted into red, green, and blue while passing through the color filter.

Meanwhile, the plurality of phosphor units 1081 and 1082 may be partitioned by a partition wall 1084 . To this end, each of the plurality of semiconductor light emitting device packages may include a barrier rib 1084 . The barrier rib 1084 may serve to separate individual sub-pixels from each other, and may be disposed between the semiconductor light emitting devices.

In addition, the barrier rib 1084 may include photoresist, an optical polymer material, or other industrial plastic material. In addition, a reflective barrier rib may be separately provided as the barrier rib 1084 . In this case, the barrier rib 1084 may include a black or white insulator depending on the purpose of the display device. When the barrier rib of the white insulator is used, it is possible to increase reflectivity, and when the barrier rib of the black insulator is used, it is possible to have reflective properties and increase the contrast.

In addition, a reflective film structure for improving reflection characteristics may be introduced on the barrier rib 1084 . That is, reflective films having various structures, such as metal and dielectric thin films, may be disposed on both edges of the barrier rib 1084 .

For a structure in which individual sub-pixels are separated from each other as a unit pixel, they are combined to form one pixel, and the pixel is mounted on a wiring board as one package, the partition wall 1084 is separated from the edge portion 1085 A portion 1086 is provided. The edge portion 1085 is formed along the edges of each package, and the partition portion 1086 protrudes from the edge portion 1085 to partition between the red sub-pixel, green sub-pixel, and blue sub-pixel. .

As shown in the drawing, the semiconductor light emitting device package has a rectangular plane and is divided into three regions having different areas by the barrier rib. The three regions become regions corresponding to each sub-pixel, and in order to have different areas, the partitioning part 1086 may include a first part 1086a and a second part 1086b.

For example, the first portion 1086a extends in one direction, and the second portion 1086b protrudes from the first portion 1086a in another direction perpendicular to the one direction. Specifically, the first portion 1086a is disposed between the first semiconductor light emitting device 1051 , the third semiconductor light emitting device 1053 , and the second semiconductor light emitting device 1052 . The second portion 1086b protrudes from the first portion 1086a in a direction perpendicular to the first portion 1086a to partition the first semiconductor light emitting device 1051 and the third semiconductor light emitting device 1053 . do. Through this structure, in a compact space, each of the plurality of phosphor parts 1081 and 1082 and the part filled with the light-transmitting material corresponding to blue may have different areas.

As shown, the color filter CF is disposed to cover the conversion layer 1080 . More specifically, the color filter CF and the wavelength conversion layer 1080 may be coupled to each other by an adhesive layer (not shown). For example, as the adhesive layer is disposed between the color filter CF and the conversion layer 1080 , the color filter CF may be attached to the conversion layer 1080 .

In this case, the color filter CF selectively transmits light to realize red, green, and blue colors. The color filter CF may include respective portions for filtering the red wavelength, the green wavelength, and the blue wavelength, and may have a structure in which the respective portions are repeatedly disposed. In this case, a red filtering portion CF1 and a green filtering portion CF2 are disposed above the first phosphor 1081 and the second phosphor 1082 , and the light in the portion constituting the blue pixel A portion CF3 that filters blue may be disposed to cover the transmissive material 1083 . A black matrix BM may be disposed between the filling portions CF1 , CF2 , and CF3 .

As described above, in this example, it is combined with the conversion layer 1080, the partition wall 1084, and the color filter CF to implement unit pixels of red, green, and blue colors.

The sub-pixels implemented by the above structure are supported by the support substrate 1090 .

As shown, the support substrate 1090 includes a first region 1091 and a second region in which a first semiconductor light emitting device 1051 , a second semiconductor light emitting device 1052 , and a third semiconductor light emitting device 1053 are disposed. 1092 and a third region 1093 . In this case, the first area 1091 , the second area 1092 , and the third area 1093 may have different sizes. More specifically, the first region 1091 , the second region 1092 , and the third region 1093 may be regions corresponding to the red sub-pixel, the green sub-pixel, and the blue sub-pixel, respectively. Accordingly, a boundary between the first region 1091 , the second region 1092 , and the third region 1093 may be set by the partition wall 1084 .

The support substrate 1090 is formed of a silicon material, and a through silicon via (TSV) is formed on the support substrate 1090 .

The silicon through electrode TSV may be formed by filling the via hole with a conductive material. As described above, by using the support substrate 1090 having the TSV, one-to-one transfer at the wafer level can be very easy.

More specifically, since the support substrate 1090 is an etchable silicon substrate, a through-silicon electrode TSV may be formed by the etching. The silicon through electrode TSV passes through the support substrate 1090 at a position overlapping the semiconductor light emitting device.

The silicon through electrode TSV may be provided in plurality to correspond to each semiconductor light emitting device. A first through electrode TSV1, a second through electrode TSV2 and A third through electrode TSV3 may be disposed. In this case, the first through electrode TSV1 , the second through electrode TSV2 , and the third through electrode TSV3 are the first semiconductor light emitting device 1051 , the second semiconductor light emitting device 1052 and the third It may be electrically connected to the second conductive electrode of the semiconductor light emitting device 1053 . For the connection, an electrode pad 1094 may be disposed on one side of the support substrate to cover the first through electrode TSV1 , the second through electrode TSV2 , and the third through electrode TSV3 .

Meanwhile, on the support substrate, a fourth through electrode TSV4 electrically connected to the first conductive electrode of the first semiconductor light emitting device 1051 , the second semiconductor light emitting device 1052 , and the third semiconductor light emitting device 1053 . ) may be provided. For example, a common electrode 1095 connected to the first conductivity-type electrodes of the plurality of semiconductor light emitting devices may be formed on the supporting substrate 1090 .

As the common electrode 1095 extends to the fourth through electrode TSV4 , the first semiconductor light emitting device 1051 , the second semiconductor light emitting device 1052 , and the third semiconductor light emitting device 1053 . The conductive electrode is electrically connected to the other side of the support substrate using the fourth through electrode TSV4 as a common through electrode. A lower electrode 1096 may be disposed under the first through electrode TSV1 , the second through electrode TSV2 , the third through electrode TSV3 , and the fourth through electrode TSV4 , respectively.

According to the structure described above, the silicon through electrodes include one through electrode TSV4 connected to the common electrode, and a plurality of through electrodes connected to second conductive electrodes of the plurality of semiconductor light emitting devices, respectively. (TSV1, TSV2, TSV3) are provided.

On the other hand, as shown, each of the plurality of semiconductor light emitting device packages includes an insulating layer 1086 covering the plurality of semiconductor light emitting devices on the opposite side of the conversion layer 1080 with respect to the plurality of semiconductor light emitting devices. can

The insulating layer 1086 is an underfill layer that fills the space between the semiconductor light emitting devices, and is formed on one surface of the support substrate 1090 so that the semiconductor light emitting devices are bonded to the support substrate. To this end, the insulating layer 1086 may be made of a material having adhesive properties in addition to insulating properties.

In addition, the insulating layer 1086 may be formed of a material having high light reflectivity in order to remove light interference between individual devices and to improve light extraction. However, the present invention is not necessarily limited thereto. For example, the insulating layer 1086 may include a resin and reflective particles. The resin may be laminated on the support substrate to fill spaces between the plurality of semiconductor light emitting devices, and the reflective particles may be mixed with the resin.

In this case, the resin may include at least one of acrylic, epoxy, polyimide, a polymer-mixed coating agent, or photoresist. The reflective particles may include at least one of titanium oxide, alumina, magnesium oxide, antimony oxide, zirconium oxide, and silica. On the other hand, the reflective particles may be a white pigment.

According to the structure described above, in the semiconductor light emitting device package, one pixel is formed by using the support substrate 1090 as a unit substrate. That is, the semiconductor light emitting device package 1050 is chamfered on a wafer by dicing, etc., and may be moved to the substrate 1010 by pick and play.

For example, the substrate 1010 may be a wiring board, and between the wiring board and the semiconductor light emitting device package 1050 is made of a material having a lower melting point than the wiring electrodes 1020 and 1040 of the wiring board. A low melting point portion 1097 may be disposed. As a specific example, the low melting point portion 1097 is disposed between the wiring electrodes 1020 and 1040 of the wiring board and the lower electrode 1096 of the support substrate 1090 to realize electrical coupling. However, the present invention is not necessarily limited thereto, and the low melting point portion 1097 may be formed to surround the wiring electrode and the conductive electrodes of the plurality of semiconductor light emitting devices, respectively.

For this example, the low melting point portion 1097 may be plated on the wiring electrode with a solder material. The solder material may be, for example, at least one of Sb, Pd, Ag, Au, and Bi. In this case, solder may be deposited on the wiring electrode, and soldering may be performed using thermal energy.

As illustrated, the wiring substrate may have a larger area than the support substrate 1090 . A plurality of support substrates are disposed on the wiring board 1010 at predetermined intervals, and through this, one light source unit may be implemented.

In this case, the distance between the semiconductor light emitting device packages in one light source unit may be set to be the same. This interval may be equally set in other light source units. In addition, in the present embodiment, as described above, in the adjacent first light source unit 1000a and the second light source unit 1000b, the semiconductor light emitting device package of the first light source unit 1000a and the semiconductor light emission of the second light source unit 1000b A mechanism for making the spacing of the device packages equal to the spacing of the semiconductor light emitting device packages in one light source unit is proposed.

16A, 16B, 17, 18A and 18B , the display device may include a plurality of frames 2100 , an elastic member 2200 , and an adjustment bracket 2300 .

The plurality of light source units 1000 described above may be respectively disposed on one surface of the plurality of frames 2100 . In this example, one light source unit may be mounted on one frame.

For example, the plurality of frames 2100 may be formed in a flat plate shape, and the substrates of the light source units may be mounted on the front surface. In this case, the length of one side of the light source unit 1000 may be longer than the length of one side of the frame 2100 so that the edge of the light source unit 1000 protrudes from the edge of the frame 2100 . More specifically, the size of the light source unit 1000 may be set larger than that of the frame 2100 for fixing the light source unit 1000 .

In this case, if the length of the light source unit 1000 is set to be smaller than the length of the frame 2100 , the distance between the semiconductor light emitting device packages between the neighboring light source units 1000a and 1000b is increased, so that the display device has an equal interval. It becomes impossible to implement the pitch of . That is, equal intervals are implemented in the display device only when the pitch 1 and the pitch 2 shown in FIG. 16B are the same, but in this structure, it is difficult to adjust the pitch 1.

In this example, in order to solve this problem, the length of the light source unit 1000 is longer than the length of the frame 2100 and the distance between the side of the light source unit 1000 and the semiconductor light emitting device is shorter than the interval of the semiconductor light emitting device package. set In addition, the distance between the neighboring light source units 1000a and 1000b is increased to increase the distance between the neighboring light source units 1000a and 1000b to a set pitch. In this case, a space between the adjacent light source units 1000a and 1000b may be covered by the elastic member 2200 .

The elastic member 2200 may be a leaf spring or elastic rubber disposed on side surfaces of the plurality of frames, and may be mounted near an edge of the flat plate. The elastic member 2200 is configured to cover a gap formed between the neighboring light sources. For example, an edge of the protruding light source unit is disposed to cover at least a portion of the elastic member 2200 , and the elastic member 2200 extends from the edge of the protruding light source unit to elastically expand the adjacent frame or light source unit. made to support

In this case, the elastic member 2200 may be in contact with at least one of the neighboring light source units 1000a and 1000b to emit heat. For heat dissipation, the elastic member 2200 may be made of a material having good thermal conductivity. For example, the elastic member 2200 may be a heat dissipation pad, and in this case, the heat dissipation effect of the frame may be brought about.

Since the elastic member 2200 applies an elastic force to the neighboring frame or the neighboring light source units 1000a and 1000b, respectively, the distance between the neighboring light source units 1000a and 1000b is adjusted by moving the plurality of frames 2100 can To this end, the adjustment bracket 2300 may be disposed on the other surface of the plurality of frames 2100 . A fixing bracket 2400 may be coupled to the other surface of the plurality of frames.

The adjustment bracket 2300 and the fixing bracket 2400 may be respectively disposed on opposite sides of the frame. In this case, the adjustment bracket 2300 is one of a plurality of adjustment brackets disposed on one side of the frame, and the fixing bracket 2400 is one of a plurality of fixing brackets disposed on the other side of the frame. can be For this example, a plurality of adjustment brackets or a plurality of fixing brackets may be disposed on each side of the frame. In this embodiment, two fixing brackets are respectively disposed on the left side and the upper side of the frame, and the two adjustment brackets are respectively disposed on the right side and the lower side of the frame.

Referring to FIG. 17 , the adjustment bracket 2300 may include a first portion 2310 disposed on the frame and a second portion 2320 protruding in a vertical direction from the first portion 2310 . there is.

The first portion 2310 is a portion disposed on the rear surface of the frame and may be formed in a flat plate shape. The second portion 2320 may protrude from one side of the first portion 2310 and be disposed at an edge of the frame.

Assembly holes 2311 and 2321 may be formed in the first portion 2310 and the second portion 2320 , respectively. In this case, the assembly hole 2321 of the second part 2320 may be fastened to a fixing bracket provided in an adjacent frame.

The fixing bracket 2400 may have the same shape as the adjustment bracket. That is, the fixing bracket 2400 may include a first portion 2410 disposed on the frame and a second portion 2420 protruding in a vertical direction from the first portion 2410 .

The second part 2420 is disposed on the edge of the frame in the same way as the adjustment frame, and is formed to be in surface contact with the adjustment bracket of a neighboring frame. In addition, a fastening hole 2411 for connection with a frame is formed in the first part 2410 of the fixing bracket 2400 , and an adjustment bracket provided in an adjacent frame, more specifically, in the second part 2420 . A fastening hole 2421 to be fastened to the assembly hole 2321 of the second part 2320 may be formed.

The fixing bracket 2400 is fastened to an adjustment bracket disposed in an adjacent frame through the assembly hole 2321 and the fastening hole 2421 . At this time, in order to move the plurality of frames 2100 to adjust the spacing between neighboring light sources, the adjustment bracket 2300 has at least one side of the adjustment hole 2312 inclined with respect to the direction toward one surface of the plurality of frames. can be formed.

The adjustment hole 2312 may have an inclined surface 2313 such that a cross section of the adjustment hole 2312 decreases along a direction away from the frame 2100 . In this case, when the adjustment rod AD is inserted, the outer circumferential surface of the adjustment rod AD presses the inclined surface 2313 , and thus the frame 2100 moves in a direction perpendicular to the adjustment hole 2312 . . By using this, fine adjustment of the frame 2100 is possible. In this case, a peripheral projection AD1 for pressing the inclined surface 2313 may be formed on the outer peripheral surface of the adjustment rod AD.

For the fine adjustment, a frame hole 2101 corresponding to the adjustment hole 2312 may be formed in the frame 2100 . In this case, a thread corresponding to the thread of the adjustment rod may be formed in the frame hole 2101 .

According to the structure described above, it is possible to fine-tune the distance between the light source units, which will be described in more detail below.

As shown in (b) and (c) of Figure 19, when the adjustment rod (AD) is turned to the right, the adjustment rod (AD) goes down along the thread of the frame hole (2101) by pushing the inclined adjustment bracket (2300) The adjustment bracket 2300 is moved. Since the fixing bracket 2400 of the neighboring frame is connected to the adjustment bracket 2300, the neighboring frame moves as shown in FIGS. spacing will be reduced. The characteristic of this method is that very fine adjustment is possible by adjusting the pitch of the screw thread, and the adjustment amount does not change according to the shaking of the adjustment rod when adjusting with the screw method. In addition, it is possible to increase the adjustment range to the depth of the thread, and has the advantage that the adjustment amount is very constant.

Referring to (b) and (c) of FIG. 20 , when the adjustment rod AD is turned to the left, the adjustment rod AD rises along the thread of the frame hole 2101 . In this case, as shown in (a) and (d) of Figure 20, the adjustment bracket 2300 is pushed while the restoring force of the elastic member 2200 is applied to adjust the gap. Although a gap is generated between the neighboring light sources 1000a and 1000b, the elastic member 2200 fills the gap to prevent light leakage.

In the display device according to the present invention described above, very precise adjustment between panels is possible by adjusting the distance between the panels in an adjustment method using a screw thread using an eccentric adjustment rod. Furthermore, an ultra-high-definition panel with a very small pitch can be implemented as a seamless large screen without dark lines.

The display device using the semiconductor light emitting device described above is not limited to the configuration and method of the above-described embodiments, but all or part of each embodiment may be selectively combined so that various modifications may be made. may be

Claims (15)

a plurality of frames;
a plurality of light source units respectively disposed on one surface of the plurality of frames and including a substrate and a plurality of semiconductor light emitting devices mounted on the substrate;
an elastic member mounted on the plurality of frames and applying an elastic force to adjacent frames; and
It includes an adjustment bracket disposed on the other surface of the plurality of frames,
The display apparatus according to claim 1, wherein at least one side of the adjustment bracket has an adjustment hole inclined with respect to a direction toward one surface of the plurality of frames so as to adjust the distance between the neighboring light sources by moving the plurality of frames. According to claim 1,
A length of one side of the light source unit is longer than a length of one side of the frame so that an edge of the light source unit protrudes from the edge of the frame. 3. The method of claim 2,
An edge of the protruding light source part is disposed to cover at least a portion of the elastic member. According to claim 1,
The elastic member is disposed on the side of the plurality of frames,
The display device according to claim 1, wherein the display device is configured to cover a gap formed between the neighboring light source units while making contact with at least one of the neighboring light source units. delete delete According to claim 1,
A frame hole corresponding to the adjustment hole is formed in the frame,
A display device, characterized in that a screw thread is formed in the frame hole. delete According to claim 1,
Further comprising a fixing bracket coupled to the other surface of the plurality of frames,
The display device, characterized in that the fixing bracket is fastened to an adjustment bracket disposed on a neighboring frame. delete 10. The method of claim 9,
The display apparatus according to claim 1, wherein the adjustment bracket and the fixing bracket are respectively disposed on opposite sides of the frame. 10. The method of claim 9,
The adjustment bracket may be one of a plurality of adjustment brackets disposed on one side of the frame, and the fixing bracket may be one of a plurality of fixing brackets disposed on the other side of the frame. According to claim 1,
Each of the plurality of light source units,
a plurality of semiconductor light emitting devices;
a support substrate to which the plurality of semiconductor light emitting devices are coupled; and
and a conversion layer that converts a color of light generated from at least some of the plurality of semiconductor light emitting devices so that the plurality of semiconductor light emitting devices form a red sub-pixel, a green sub-pixel, and a blue sub-pixel; Device. 14. The method of claim 13,
The semiconductor light emitting device corresponding to at least one of the red sub-pixel and the green sub-pixel has a light emitting area different from that of the semiconductor light emitting device corresponding to the blue sub-pixel. delete

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