KR102358842B1 - Light emitting device package and lighting source unit - Google Patents

Abstract

The light emitting device package disclosed in the embodiment includes first and second frames spaced apart from each other; a body disposed between the first and second frames; a first light emitting device having first and second electrodes and disposed on the first frame; a second light emitting device having first and second electrodes and disposed on the body; and an adhesive disposed between the second light emitting device and the body, wherein the intensity of the wavelength of the light emitted from the first light emitting device and the wavelength of the light emitted from the second light emitting device is the largest. The wavelengths are different from each other, and the second electrode of the first light emitting element is disposed to face the first electrode of the second light emitting element, and between the second electrode of the first light emitting element and the first electrode of the second light emitting element It may include a first intermetallic compound layer disposed on the.

Description

Light emitting device package and light source device {LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SOURCE UNIT}

The embodiment relates to a package having a semiconductor device and a light source device.

The embodiment relates to a package having a light emitting device and a light source device having the same.

A semiconductor device including a compound such as GaN or AlGaN has many advantages, such as having a wide and easily adjustable band gap energy, and thus can be used in various ways as a light emitting device, a light receiving device, and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials have developed red, green, and It has the advantage of being able to implement light of various wavelength bands, such as blue and ultraviolet. In addition, a light emitting device such as a light emitting diode or a laser diode using a group 3-5 or group 2-6 compound semiconductor material may be implemented as a white light source with good efficiency by using a fluorescent material or combining colors. These light emitting devices have advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when a light receiving device such as a photodetector or a solar cell is manufactured using a group 3-5 or group 2-6 compound semiconductor material, a photocurrent is generated by absorbing light in various wavelength ranges through the development of the device material. By doing so, light of various wavelength ranges from gamma rays to radio wavelength ranges can be used. In addition, such a light receiving element has advantages of fast response speed, safety, environmental friendliness, and easy adjustment of element materials, and thus can be easily used in power control or ultra-high frequency circuits or communication modules.

Therefore, the semiconductor device can replace a light emitting diode backlight, a fluorescent lamp or an incandescent light bulb that replaces a cold cathode fluorescence lamp (CCFL) constituting a transmission module of an optical communication means and a backlight of a liquid crystal display (LCD) display device. The application is expanding to white light emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. In addition, the application of the semiconductor device may be extended to high-frequency application circuits, other power control devices, and communication modules.

A light emitting device (Light Emitting Device) may be provided as a pn junction diode having a property of converting electrical energy into light energy by using, for example, a group 3-5 element or a group 2-6 element on the periodic table, Various wavelengths can be realized by adjusting the composition ratio.

For example, nitride semiconductors are receiving great attention in the field of developing optical devices and high-power electronic devices due to their high thermal stability and wide bandgap energy. In particular, a blue light emitting device, a green light emitting device, an ultraviolet (UV) light emitting device, and a red light emitting device using a nitride semiconductor have been commercialized and widely used.

For example, in the case of an ultraviolet light emitting device, it is a light emitting diode that generates light distributed in a wavelength range of 200 nm - 400 nm, and is used in sterilization and purification, etc. can be used

Ultraviolet rays can be divided into UV-A (315nm-400nm), UV-B (280nm-315nm), and UV-C (200nm-280nm) in the order of the longest wavelength. The UV-A (315nm-400nm) region is applied in various fields such as industrial UV curing, printing ink curing, exposure machine, counterfeit detection, photocatalytic sterilization, special lighting (aquarium/agricultural use, etc.), and UV-B (280nm-315nm) ) area is used for medical purposes, and the UV-C (200nm-280nm) area is applied to air purification, water purification, and sterilization products.

Meanwhile, as a semiconductor device capable of providing a high output is requested, research on a semiconductor device capable of increasing the output by applying a high power is being conducted.

In addition, in a semiconductor device package, research is being conducted on a method for improving the light extraction efficiency of the semiconductor device and improving the luminous intensity at the package end. In addition, in a semiconductor device package, research is being conducted on a method for improving the bonding force between the package electrode and the semiconductor device.

In addition, in a semiconductor device package, research is being conducted on a method for reducing manufacturing cost and improving manufacturing yield by improving process efficiency and changing the structure.

The embodiment may provide a light emitting device package and a light source device capable of improving color reproducibility.

The embodiment may provide a light emitting device package and a light source device in which light emitting devices emitting different colors are stacked on light emitting devices having different peak wavelengths.

The embodiment may provide a light emitting device package and a light source device in which light emitting devices emitting different colors are connected in series on light emitting devices having different peak wavelengths.

The embodiment may provide a semiconductor device package and a light source device capable of preventing a re-melting phenomenon from occurring in a bonding region between electrodes of light emitting devices in a process in which the light emitting device package is re-bonded to a substrate or the like.

A light emitting device package according to an embodiment includes first and second frames spaced apart from each other; a body disposed between the first and second frames; a first light emitting device having first and second electrodes and disposed on the first frame; a second light emitting device having first and second electrodes and disposed on the body; and an adhesive disposed between the second light emitting device and the body, wherein the intensity of the wavelength of the light emitted from the first light emitting device and the wavelength of the light emitted from the second light emitting device is the largest. The wavelengths are different from each other, and the second electrode of the first light emitting element is disposed to face the first electrode of the second light emitting element, and between the second electrode of the first light emitting element and the first electrode of the second light emitting element It may include a first intermetallic compound layer disposed on the.

The light emitting device package disclosed in the embodiment includes first and second frames spaced apart from each other; a body coupled to the first and second frames; and a plurality of light emitting devices disposed on the first and second frames, wherein the plurality of light emitting devices include a first light emitting device emitting a first light, a second light emitting device emitting a second light, and a third light emitting device a third light emitting device for emitting Each of the third light emitting devices includes first and second electrodes, the first light emitting device is disposed on the first frame and is electrically connected to the first frame, and the second light emitting device includes the first and first light emitting devices It is disposed on at least one of the two frames and is electrically connected to the second frame, and the third light emitting device is disposed on the first and second light emitting devices, and is electrically connected to the first and second light emitting devices. and the first electrode of the third light emitting device faces the second electrode of the first light emitting device and is connected to the second electrode of the first light emitting device, and the second electrode of the third light emitting device is the second electrode It may face the first electrode of the light emitting device and may be connected to the first electrode of the first light emitting device.

According to an embodiment, a third light emitting device having first and second electrodes and disposed on the second frame is included, and the wavelength with the greatest intensity among wavelengths of light emitted from the third light emitting device is the first and second light emitting devices. Among the wavelengths of light emitted from the second light emitting element, the intensity is different from the largest wavelength, and the first electrode of the third light emitting element is disposed to face the second electrode of the second light emitting element, and the second electrode of the third light emitting element is and a second intermetallic compound layer disposed between the first electrode and the second electrode of the second light emitting device.

According to an embodiment, the first electrode of the first light emitting element is connected to the first frame by a wire, the second electrode of the third light emitting element is connected to the second frame by a wire, and the second light emitting element A lower surface area of the first and second electrodes may be larger than an upper surface area of the second electrode of the first light emitting element and the first electrode of the third light emitting element.

In an embodiment, the second electrode of the second light emitting device may face the second frame and be connected to the second frame.

According to an embodiment, the first and third light emitting devices emit different blue peak wavelengths and main wavelengths, and the second light emitting device emits green peak wavelengths, and the first to third light emitting devices emit light. It may include a molding part having a red phosphor.

According to an embodiment, the first light emitting device may emit a blue wavelength, the second light emitting device may emit a green wavelength, and a molding part having a red phosphor on the first and second light emitting devices may be included.

According to an embodiment, the first and second intermetallic compound layers include at least one of Ag _x In _y , Cu _x Sn _y , Ag _x Sn _y , Au _x Sn _y , Cu _x Ni _y , wherein x is 0<x<1, y=1-x.

According to an embodiment, an upper portion of the package body may be opened, the first and second frames may be exposed, and a cavity may include a cavity in which the molding part is disposed.

According to an embodiment, the adhesive may be in contact with the first to third light emitting devices and in contact with at least one of the body and the first and second frames, and the body may have a recess in which a part of the adhesive is disposed. have.

According to an embodiment, the upper surface of the second frame is disposed higher than the height of the upper surface of the first light emitting device, and the body includes an inclined side surface and is in contact with the adhesive light emitting device package according to the embodiment. It may include a light source device having

The embodiment may provide a high voltage package by connecting a plurality of light emitting devices in series.

The embodiment may provide a package for high color reproduction and a light source device by having a plurality of light emitting devices emitting different peak wavelengths and at least one light emitting device emitting different colors.

In an embodiment, light efficiency may be improved.

In the embodiment, the electrodes of the light emitting devices are directly connected, so that thermal characteristics may be improved.

In the embodiment, by arranging light emitting devices that emit light of different wavelengths in the same color, the use ratio of the LED chip can be improved.

By bonding the light emitting devices according to the embodiment with a low-temperature metal compound layer, a re-melting phenomenon occurs in the bonding region in the light emitting device package in the process of re-bonding the light emitting device package on the circuit board. can be prevented

1 is a plan view of a light emitting device package according to a first embodiment.
FIG. 2 is a cross-sectional view on the AA side of the light emitting device package of FIG. 1 .
FIG. 3 is a first modified example of the light emitting device package of FIG. 2 .
FIG. 4 is a second modified example of the light emitting device package of FIG. 2 .
FIG. 5 is a view showing a detailed example of light emitting devices of the light emitting device package of FIG. 2 .
6 is a cross-sectional view illustrating an example of a third light emitting device in the light emitting device package of FIG. 5 .
7(a)(b) is a diagram illustrating an example of an intermetallic compound layer and a paste between electrodes, and (c) is a diagram illustrating an area difference between the electrodes.
8 is a view showing a first modified example of the light emitting device package of FIG. 1 .
9 is a view showing a second modified example of the light emitting device package of FIG. 1 .
FIG. 10 is a view showing a third modified example of the light emitting device package of FIG. 1 .
11 is an example of a cross-sectional view of a light emitting device package according to a second embodiment.
12 is an example of a cross-sectional side view of a light source device having a light emitting device package according to an embodiment.
13 is another example of a light source device in which a plurality of light emitting devices are disposed according to the third embodiment.
14 is an example in which a plurality of light emitting units of FIG. 13 are arranged.
15 is an example of a wavelength spectrum emitted from the light emitting device package of FIG. 1 .
16 is an example of a wavelength spectrum emitted from the light emitting device package of FIG. 11 .

Hereinafter, an embodiment will be described with reference to the accompanying drawings. In the description of embodiments, each layer (film), region, pattern or structure is “on/over” or “under” the substrate, each layer (film), region, pad or pattern. In the case of being described as being formed on, “on/over” and “under” include both “directly” or “indirectly” formed through another layer. do. In addition, the reference for the upper / upper or lower of each layer will be described with reference to the drawings, but the embodiment is not limited thereto.

Hereinafter, a semiconductor device package according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The semiconductor device of the semiconductor device package may include a light emitting device that emits light of ultraviolet, infrared, or visible light. Hereinafter, as an example of a semiconductor device, a light emitting device is applied as an example, and a non-light emitting device, for example, a Zener diode, or a sensing device for monitoring wavelength or heat is included in a package or a light source device to which the light emitting device is applied. can

A light emitting device package according to the first embodiment will be described with reference to FIGS. 1 to 7 . 1 is a plan view of a light emitting device package according to a first embodiment, FIG. 2 is a cross-sectional view on the AA side of the light emitting device package of FIG. 1, FIG. 3 is a first modified example of the light emitting device package of FIG. 2, and FIG. 4 is It is a second modified example of the light emitting device package of FIG. 2 , FIG. 5 is a view showing the detailed configuration of the light emitting devices of the light emitting device package of FIG. 2 , and FIG. 6 is an example of a third light emitting device in the light emitting device package of FIG. 7(a)(b) is a diagram showing an example of an intermetallic compound layer and a paste between electrodes, and (c) is a diagram showing an area difference between the electrodes.

The light emitting device package 100 according to the embodiment, as shown in FIGS. 1 and 2 , may include a package package body 110 and a plurality of light emitting devices 151 , 152 , and 153 .

The package body 110 may be coupled to the first frame 121 and the second frame 131 . The package body 110 may be a support member for supporting the first and second frames 121 and 131 , for example, a support substrate. In the package body 110 , the first frame 121 and the second frame 131 may be disposed to be spaced apart from each other. A body 113 may be disposed between the first and second frames 121 and 131 . The body 113 may be made of the same material as the package body 110 or a different material. When the body 113 and the package body 110 are made of different materials, an interface may be formed between the two bodies.

The package body 110 and the body 113 may be made of a resin material or an insulating material. The package body 110 may include, for example, polyphthalamide (PPA: Polyphthalamide), PCT (Polychloro Triphenyl), LCP (Liquid Crystal Polymer), PA9T (Polyamide9T), silicone, epoxy molding compound (EMC), At least one selected from a group including a silicon molding compound (SMC), ceramic, photo sensitive glass (PSG), and sapphire (Al ₂ O ₃ ) may be formed. In addition, the package body 110 and the body 113 may include a high refractive filler such as TiO ₂ and SiO ₂ in an epoxy material. The package body 110 and the body 113 may be made of a reflective resin material. As another example, the package body 110 and the body 113 may be made of a transparent or non-transparent material.

The first frame 121 and the second frame 131 may be separated from each other by the body 113 . When the first frame 121 and the second frame 131 are a conductive material or an electrode, the separation unit 113 is an electrode separation member and may be formed of an insulating material. The separation part 113 is disposed between the first frame 121 and the second frame 131 and may be formed of the same material as the package body 110 or may be made of a material different from that of the package body 110 . . The separation unit 113 may be made of a transparent or non-transparent material. The package body 110 may include the body 113 and first and second frames 121 and 131 .

The package body 110 may include a cavity 112 . In the cavity 112 , an upper portion of the package body 110 may be opened, and the first frame 121 and the second frame 131 may be exposed. The first frame 121 and the second frame 131 may be exposed at the bottom of the cavity 112 . The body 113 may be exposed at the bottom of the cavity 112 . The side surface 116 of the cavity 112 may have an inclined surface or a vertical surface with respect to a horizontal straight line at the bottom of the package, or may have an inclined surface and a vertical surface. The top view shape of the cavity 112 may include a circular shape, an elliptical shape, or a polygonal shape. The cavity 112 may have a narrower or smaller bottom area or width than the upper area or width.

The first frame 121 and the second frame 131 may be made of a conductive material, for example, may include a metal material. The first frame 121 and the second frame 131 may be formed of a metal, for example, platinum (Pt), titanium (Ti), nickel (Ni), copper (Cu), gold (Au), tantalum (Ta), or aluminum. It may include at least one of (Al) and silver (Ag), and may be formed as a single layer or a multi-layer having different metal layers.

The first frame 121 may include a first extension part 123 extending to the first side of the package body 110 through the package body 110 , and the first extension part 123 . may protrude single or plural. A surface opposite to the first side of the package body 110 may be a second side. The first frame 121 has at least one hole 125 in a region overlapping the package body 110 in a vertical direction, and a portion of the package body 110 is coupled through the hole 125 . can be

The second frame 131 may include a second extension portion 133 extending to the second side of the package body 110 through the package body 110 , and the second extension portion 133 . may protrude single or plural. The second frame 131 has at least one hole 135 in a region overlapping with the package body 110 in a vertical direction, and a portion of the package body 110 is coupled through the hole 135 . can be

The thickness T2 of the first frame 121 and the second frame 131 may be provided to be 220 μm or less, for example, may be provided in a range of 180 μm to 220 μm. For example, the holes 125 and 135 of the first and second frames 121 and 131 may be formed as a stepped region in which the lower region has a larger area or width than the upper region. The thickness T2 of the step region may be 100 μm or less, for example, in the range of 20 μm to 100 μm. Here, the thickness difference T2-T1 in the step region may be selected to be at least 100 μm or more. This is in consideration of the thickness of the injection process that can provide crack-free (crack-free) of the package body (110).

The light emitting devices 151 , 152 , and 153 may be formed of a compound semiconductor of a group II and group VI element, or/and a compound semiconductor of a group III and group V element. For example, the light emitting device may selectively include a semiconductor device manufactured using a series of compound semiconductors such as AlInGaN, InGaN, AlGaN, GaN, GaAs, InGaP, AllnGaP, InP, and InGaAs. The plurality of light emitting devices 151 , 152 , and 153 may emit different colors. The plurality of light emitting devices 151 , 152 , and 153 may emit different peak wavelengths and/or different dominant wavelengths within the same color. The plurality of light emitting devices 151 , 152 , and 153 include two or more light emitting devices that emit different peak wavelengths and different main wavelengths within the same first color, and at least one light emitting device that emits a second color different from the first color. It may include elements. Accordingly, since the light emitting device package 100 emits multicolor and colors having different peak wavelengths and different main wavelengths, high color gamut can be improved. The peak wavelength is a wavelength having the greatest intensity among wavelengths of light emitted from each light emitting device. The plurality of light emitting devices 151 , 152 , and 153 may have different wavelengths with the greatest intensity among wavelengths of light.

The plurality of light emitting devices 151 , 152 , and 153 may be stacked in a multi-layered structure. The plurality of light emitting devices 151 , 152 , and 153 may be stacked in two or more layers, thereby improving the chip density of the LED. Here, the light emitting devices 151 , 152 , and 153 having a multilayer structure are a one-layer device disposed on the bottom of the cavity 112 , a two-layer device disposed on the first-layer device, and the first and second layer devices are arranged in a vertical direction. At least some of them may overlap. The regions overlapping in the vertical direction may be regions facing each other.

The plurality of light emitting devices 151 , 152 , and 153 may be arranged in a first direction (X) as shown in FIG. 1 . At least one or two of the plurality of light emitting devices 151 , 152 , and 153 may be arranged in the first direction (X). At least one or two of the plurality of light emitting devices 151 , 152 , and 153 may be disposed on the first or second frames 121 and 131 . As another example, all the light emitting devices 151 , 152 , and 153 may be disposed on any one of the first and second frames 121 and 131 . The plurality of light emitting devices 151 , 152 , and 153 may be disposed on the first and second frames 121 and 131 at the bottom of the cavity 112 .

Each of the plurality of light emitting devices 151 , 152 , and 153 may include a first electrode P1 , P3 , and P5 and a second electrode P2 , P4 , and P6 . The first electrodes P1, P3, and P5 may be connected to the p-type semiconductor layer of each light emitting device 151, 152, and 153, and the second electrodes P2, P4, P6 may be connected to the n-type semiconductor layer of each light emitting device. have.

The plurality of light emitting devices 151 , 152 and 153 include a first light emitting device 151 disposed on a first frame 121 , a second light emitting device 152 disposed on the second frame 131 , and the first light emitting device ( 151) and a third light emitting device 153 disposed on the second light emitting device 152 may be included. The first and second light emitting devices 151 and 152 may emit the same color. The third light emitting device 153 may emit light of a color different from that of the first and second light emitting devices 151 and 152 .

2 and 5 , the first light emitting device 151 emits a first light W1, the second light emitting device 152 emits a second light W2, and the third light emitting device 152 emits a second light W2. The device 153 may emit the third light W3 . The third light W3 may have a longer wavelength than the second light W2 , and the second light W2 may have a longer wavelength than the first light W1 . The first light W1 and the second light W2 may have, for example, a blue wavelength, and the third light W3 may have a green wavelength. The difference between the peak wavelengths of the first light W1 and the second light W2 may have a difference of 5 nm or more, for example, 10 nm or more. 15 , the first light W1 may have a blue wavelength of less than 450 nm, and the second light W2 may have a blue wavelength of 450 nm or more. As the wavelength difference between the first light W1 and the second light W2 increases, the full width at half maximum of the blue wavelength may increase, and as the width at half maximum increases, the color reproducibility of the blue wavelength may be improved. By using chips that emit different peak wavelengths and different main wavelengths within the same color as the first and second light emitting devices 151 and 152, the chip usage ratio can be increased and various blue wavelengths can be applied. In this case, when a chip having a wavelength difference of 2 nm or less is used for the first and second light emitting devices 151 and 152, chips having a wavelength difference of 3 nm or more cannot be used, but this embodiment can solve the above problem. 5 and 15 , the third light W3 may have a green wavelength, for example, in a range of 500 nm to 600 nm.

Here, the third light emitting device 153 may be connected to the first light emitting device 151 in series, and the second light emitting device 152 may be connected to the third light emitting device 153 in series. Voltages applied to the first, third, and second light emitting devices 151 , 153 , and 152 may be in the range of, for example, 8.3V to 9.6V. Alternatively, the voltage supplied to the light emitting device package, that is, the driving voltage may be 8V or more, for example, 8.3V to 9.6V. The driving voltage of the package may vary depending on the number of light emitting devices, for example, the driving voltage of each of the light emitting devices 151 , 152 and 153 × n (n≥2 LEDs).

The first electrode P1 and the second electrode P2 of the first light emitting device 151 are disposed on or exposed, and the first electrode P3 and the second electrode P3 of the second light emitting device 152 ( P4) may be disposed on or exposed, and the first electrode P5 and the second electrode P6 of the third light emitting device 153 may be disposed or exposed underneath.

As shown in FIG. 2 , the first light emitting device 151 may be attached to the first frame 121 with an adhesive 129 . The first electrode P1 of the first light emitting device 151 is connected to the first frame 121 with a wire 141 , and the second electrode P2 is the first electrode of the third light emitting device 153 . It is electrically connected to (P1). The second electrode P2 of the first light emitting device 151 faces the first electrode P5 of the third light emitting device 153 , and the first electrode P5 of the third light emitting device 153 . and may overlap in the vertical direction.

The second light emitting device 152 may be adhered to at least one of the first and second frames 121 and 131 , for example, to the second frame 131 with an adhesive 139 . A second electrode P3 of the second light emitting device 152 is connected to a second frame 131 and a wire 142 , and the first electrode P3 is a second electrode of the third light emitting device 153 . It corresponds to (P6) and is electrically connected to each other. The first electrode P3 of the second light emitting device 152 faces the second electrode P6 of the third light emitting device 153 , and the second electrode P6 of the third light emitting device 153 . and may overlap in the vertical direction. The third light emitting device 153 may overlap the body 113 in a vertical direction. In the third light emitting device 153, the overlapping area with the body 113 may be overlapped by 80% or less, for example, in the range of 20% to 80%, and when the overlapping area exceeds the above range, electrode alignment is It can be difficult and the light interference can be large if it is less than the above range.

The first electrode P5 of the third light emitting device 153 is connected in series with the second electrode P2 of the first light emitting device 151, and the second electrode P6 is the second light emitting device It may be connected in series with the first electrode P3 of 152 . The third light emitting device 153 may connect the first light emitting device 151 and the second light emitting device 152 in series. The third light emitting device 153 may be a flip chip, and the first and second light emitting devices 151 and 152 may be horizontal chips.

The bottom area of the first electrode P5 of the third light emitting device 153 may be larger than the top area of the second electrode P2 of the first light emitting device 151 , and may be, for example, 1.5 times or more. The second electrode P6 of the third light emitting device 153 may be 1.5 times larger than the top surface area of the first electrode P3 of the second light emitting device 152 . When the third light emitting device 153 is aligned on the first light emitting device 151 and the second light emitting device 152 in a flip-chip method and then bonded, the third light emitting device 153 having a large area Alignment errors can be reduced by the first and second electrodes P5 and P6.

5 , the second electrode P2 of the first light emitting device 151 and the first electrode P5 of the third light emitting device 153 are bonded to each other. The second electrode P2 of the first light emitting device 151 and the first electrode P5 of the third light emitting device 153 may be bonded with a first intermetallic compound layer P10 . The first intermetallic compound (IMC) layer (P10) may include at least one of Ag and Au, for example, Ag solder, Ag-Sn-based, Au paste, Au-Sn-based, Au nanoshell (GNs: gold). nanoshell)-based material may be included. The first intermetallic compound layer P10 may include at least one of Ag _x In _y , Cu _x Sn _y , Ag _x Sn _y , Au _x Sn _y , Cu _x Ni _y , wherein x is 0<x< 1, y=1-x. The second electrode P2 of the first light emitting device 151 and the first electrode P5 of the third light emitting device 153 are eutectic bonded, so that the first intermetallic compound layer P10 is formed. can be formed. The first intermetallic compound layer P10 may be sintered at a relatively low temperature compared to a temperature heated when the light emitting device package is mounted, and may include at least one of Au, Ag, and Cu. have.

The first electrode P3 of the second light emitting device 152 and the second electrode P6 of the third light emitting device 153 are bonded to each other. The second electrode P3 of the second light emitting device 152 and the second electrode P6 of the third light emitting device 153 may be bonded with a second intermetallic compound layer P11 . The second intermetallic compound layer P11 may be the same material as the first intermetallic compound layer P10.

A molding part 181 may be disposed in the cavity 112 . The molding part 181 may include a transparent resin material. The molding part 181 may include a material such as transparent silicone or epoxy. The molding part 181 may cover the first to third light emitting devices 151 , 152 , and 153 . The molding part 181 may transmit light emitted from the first to third light emitting devices 151 , 152 , and 153 . The molding part 181 may be disposed in a single layer or in multiple layers, and in the case of a multilayer, a resin material having a lower refractive index toward the upper surface of the molding part 181 may be disposed.

The molding part 181 may include a phosphor therein. The phosphor may include a red phosphor, and the red phosphor may include a sulfide-based, oxysulfide-based, nitride-based, or fluoride-based phosphor. The red phosphor may include, for example, at least one of Ba ₃ SiO ₅ :Eu ²⁺ , Ba ₂ LiB ₅ O ₁₀ :Eu ²⁺ , Ba ₂ ^Mg (BO ₃ ) ₂ :Eu ²⁺ , or ^a fluoride compound. As the phosphor of, for example, it may include at least one of an MGF-based phosphor, a KSF-based phosphor, or a KTF-based phosphor.

The upper surface of the molding part 181 may include at least one of a horizontal plane, a concave curved surface, or a convex curved surface. An optical lens (not shown) may be disposed on the molding unit 181 , and the optical lens may control a directivity characteristic of light emitted through the molding unit 181 .

In the embodiment, in the light emitting device package 100, two or more third light emitting devices 153 having a longer wavelength than the blue wavelength are stacked on blue light emitting devices emitting different peak wavelengths and different main wavelengths, and a phosphor is formed. By molding with the molding part 181 having the present invention, it is possible to improve color gamut and increase the effectiveness of the blue LED chip. In addition, it is possible to change the amount of light by the two or more blue light emitting devices, and it is possible to reduce the problem of increased energy loss of the blue wavelength. In addition, the third light emitting device 153 , for example, a green light emitting device, may have the same size as the first light emitting device 151 or the second light emitting device 152 or may have a size 2 to 4 times larger than that of the first light emitting device 151 or the second light emitting device 152 . Accordingly, deterioration in characteristics of green light emitted through the package may be reduced.

In addition, since the first light emitting device 151, the third light emitting device 153, and the second light emitting device 152 are connected in series, consumption efficiency can be improved and the driver can be easily controlled.

3 is a first modified example of the light emitting device package of FIG. 2 . The light emitting device package includes an adhesive 118 disposed between the light emitting devices. The adhesive 118 may be in contact with at least one or two or more of the first to third light emitting devices 151 , 152 , and 153 . The adhesive 118 is a resin material, and includes, for example, at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. can In addition, the adhesive 118 may be an adhesive 118 that reflects light emitted from the light emitting devices 151 , 152 , and 153 , for example, Al ₂ O ₃ , SiO ₂ , TiO ₂ A resin containing a filler having a high refractive index. Or, it may include white silicone.

The adhesive 118 may be disposed between the third light emitting device 153 and the body 113 . The adhesive 118 may be disposed between the third light emitting device 153 and the first and second frames 121 and 131 . The adhesive 118 is in contact with at least one of the third light emitting device 153 and the first and second frames 121 and 131 to dissipate heat generated from the third light emitting device 153 to the first and second frames. It can conduct through at least one of (121,131). The heat-conducting property of the adhesive 118 is higher than the heat-conducting property of the molding part 181 , so that the heat generated from the third light emitting device 153 is conducted through the first and second frames 121 and 131 , and the Thermal stability of the third light emitting device 153 may be provided.

The adhesive 118 may be disposed between the first light emitting device 151 and the second light emitting device 152 . The thickness of the adhesive 118 may be greater than the thickness of the first light emitting device 151 and the second light emitting device 152 . The adhesive 118 is the second electrode P2 of the first light emitting device 151 , the first electrode P3 of the second light emitting device 152 , and the first and second electrodes of the third light emitting device 153 . It can be in contact with (P5, P6) or not. The adhesive 118 affects the bonding portion of the electrodes P2, P5, P3, and P6, or through the electrodes P2, P5, P3, and P6 to the upper surfaces of the first and second light emitting devices 151 and 152. It may be extended, and may be formed so as to be non-contact with the electrodes P2, P5, P3, and P6.

The adhesive 118 may be in contact with the molding part 181 . The width of the upper surface of the adhesive 118 may be the same as the distance between the first and second light emitting devices 151 and 152 , and the length in the second direction (Y direction in FIG. 1 ) is the third light emitting device 153 . It may be equal to or greater than the length of the second direction. This adhesive 118 is in contact with the lower surface of the third light emitting element 153 to conduct heat and reflect light, so that the heat dissipation characteristic of the third light emitting element 153 is improved and the first and second light emitting elements 151 and 152 It is possible to reduce light interference by reflecting light in the region between them.

FIG. 4 is a second modified example of the light emitting device package of FIG. 2 , and the same parts as those of FIGS. 2 and 3 will be referred to with reference to FIGS. 2 and 3 .

Referring to FIG. 4 , an adhesive 118 is disposed between the light emitting devices 151 , 152 , and 153 . The adhesive 118 will be described with reference to FIG. 3 . The adhesive 118 may be disposed between the body 113 and the third light emitting device 153 and may be in contact.

A recess 114 is disposed in the body 113 , and the depth of the recess 114 may be less than 1/2 of the thickness of the body 113 . A portion of the adhesive 118 may be filled in the recess 114 . Since the contact area of the adhesive 118 with the body 113 is increased, the adhesive 118 is supported by the body 113 to reduce the influence on the first and second light emitting devices 151 and 152 due to thermal expansion.

5 , each of the first to third light emitting devices 151 , 152 , and 153 includes a substrate 305 and a light emitting structure 310 on the substrate 305 . The light emitting structure 310 of each of the light emitting devices 151 , 152 and 153 includes an n-type semiconductor layer and a p-type semiconductor layer, and active layers A1 , A2 and A3 disposed between the n-type semiconductor layer and the p-type semiconductor layer. The active layer A1 of the first light emitting device 151 emits the first light W1, the active layer A2 of the second light emitting device 152 emits the second light W2, and the third light emission The active layer A3 of the device 153 may emit the third light W3 . The first light W1 may have a shorter wavelength than the second light W2 , and the second light W2 may have a shorter wavelength than the third light W3 . The first and second lights W1 and W2 have different peak wavelengths and different main wavelengths within the same color, and the third light W3 has a wavelength different from that of the first and second lights W1 and W2. to be. The first and second lights W1 and W2 are blue lights, and the third lights W3 are green lights. The third light emitting device 153 is provided in a chip structure similar to that of the twelfth light emitting devices 151 and 152 , but may be provided in a different chip structure, but is not limited thereto.

As another example, the first and second light emitting devices 151 and 152 may emit green light having different peaks, and the third light emitting device 153 may emit blue light. As another example, the first light emitting device 151 may emit blue light, and the second and third light emitting devices may emit green light. As another example, the first and third light emitting devices 151 and 153 may emit blue light, and the second light emitting device 152 may emit green light. In an embodiment, at least one of the three or more light emitting devices may emit green light, at least one may emit blue light, and the other one is blue or green light having a different peak wavelength and a main wavelength from other light. can By adjusting the amount of the green and blue lights, color reproducibility can be increased.

6 is an example of the light emitting device according to the embodiment, and will be described as an example of the third light emitting device 153 .

Referring to FIG. 6 , the light emitting device 153 includes a light emitting structure 310 and a first electrode P5 and a second electrode P6 on the light emitting structure 310 .

The light emitting structure 310 may be provided as a group 2-6 compound semiconductor or a group 3-5 compound semiconductor, and includes a multilayer structure. The light emitting structure 310 may include a first conductivity type semiconductor layer 311 , an active layer 312 , and a second conductivity type semiconductor layer 313 . The active layer 312 may be disposed between the first conductivity-type semiconductor layer 311 and the second conductivity-type semiconductor layer 313 . The first conductivity-type semiconductor layer 311 may be provided as an n-type semiconductor layer, and the second conductivity-type semiconductor layer 313 may be provided as a p-type semiconductor layer. Of course, according to another example, the first conductivity type semiconductor layer 311 may be provided as a p-type semiconductor layer, and the second conductivity type semiconductor layer 313 may be provided as an n-type semiconductor layer. The light emitting structure 310 may include at least two or more elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). .

The light emitting structure 310 may be disposed on the substrate 305 . A semiconductor layer having a single-layer or multi-layer structure having a Group 2-6 compound semiconductor or a Group III-5 compound semiconductor may be disposed between the light emitting structure 310 and the substrate 305 , but is not limited thereto. The substrate 305 may be selectively formed from an insulating, conductive, or transmissive material. The substrate 305 may be selected from a group including, for example, a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, an uneven pattern may be formed on at least one of an upper and a lower surface of the substrate 305 , thereby improving light extraction efficiency.

The current diffusion layer 320 and the conductive layer 330 may be disposed on the light emitting structure 310 . The current diffusion layer 320 and the conductive layer 330 may improve current diffusion to increase light output. The current diffusion layer 320 may be made of oxide or nitride. The current diffusion layer 320 may vertically overlap the first electrode part 342 and may be in contact with the second conductive semiconductor layer 313 . The current diffusion layer 320 may improve the luminous flux by preventing current concentration under the first electrode part 342 to improve electrical reliability.

The conductive layer 330 may include at least one selected from the group consisting of a metal, a metal oxide, and a metal nitride. The conductive layer 330 may include a light-transmitting material. For example, the conductive layer 330 may include indium tin oxide (ITO), indium zinc oxide (IZO), IZO nitride (IZON), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), and indium gallium zinc (IGZO). oxide), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/ Au/ITO, Pt, Ni, Au, Rh, may include at least one selected from the group including Pd, may be a single layer or multi-layer. The conductive layer 330 may include a reflective material, for example, a metal such as Au, Al, Ag.

The protective layer 350 may protect an exposed surface of the light emitting structure 310 on the light emitting structure 310 . The protective layer 350 may be disposed on the first electrode part 342 . The protective layer 350 may include an opening exposing an upper region of the first electrode part 342 . The protective layer 350 may be disposed on the second electrode part 341 of the second electrode P6 . The protective layer 350 may include an opening exposing an upper region of the second electrode part 341 . For example, the protective layer 350 may be made of an insulating material. For example, the protective layer 350 is SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ It may be formed of at least one material selected from the group comprising:

The first electrode P5 may include at least one of a first electrode part 342 , a first reflective layer 362 , and a first pad 372 . The first electrode part 342 may be connected to the conductive layer 330 , and may be connected to the first pad 372 . The first reflective layer 362 may be made of an insulating material, and may be disposed around the first electrode part 342 to reduce light loss.

The second electrode P6 may include at least one of a second electrode part 341 , a second reflective layer 361 , and a second pad 371 . The second electrode part 341 may be connected to the first conductive semiconductor layer 311 and may be connected to the second pad 371 . The second reflective layer 361 may be made of an insulating material, and may be disposed around the second electrode part 341 to reduce light loss. For example, the first electrode part 342 and the second electrode part 341 may include ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag. , at least one of Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, or an alloy of two or more of these materials. For example, the first reflective layer 362 and the second reflective layer 361 may have a reflective structure made of a resin material, or a DBR (Distributed Bragg Reflector) layer or ODR (Omni Directional Reflector) layer in which layers having different refractive indices are stacked. can be provided as The first pad 372 and the second pad 371 include Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au, Hf, One or more materials or alloys from among Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO may be used to form a single layer or multiple layers. .

7A, the first electrode P5 of the third light emitting device 153 and the second electrode P2 of the first light emitting device 151 are formed on the first intermetallic compound layer P10. can be joined by The second electrode P6 of the third light emitting device 153 and the first electrode P3 of the second light emitting device 152 may be joined by a second intermetallic compound layer P11. The first and second intermetallic compound layers P10 and P11 may include at least one of Au, Cu, and Ag. The first and second intermetallic compound layers (P10, P11) may include at least one of Ag _x In _y , Cu _x Sn _y , Ag _x Sn _y , Au _x Sn _y , Cu _x Ni _y , wherein x is 0<x<1, y=1-x. The first and second intermetallic compound layers P10 and P11 may be larger than an area and a width of the electrodes P2 and P3 located thereunder. The electrodes P2 and P3 positioned below the first layer P21 may be Au, Ag, Pd, Sn, or In layers, and the second layer P22 is disposed under the first layer P21 and includes Cu , Cr, and Ni.

7 (b) may include the conductive epoxy solder paste P20 rather than the intermetallic compound layer, for example, Ag epoxy solder paste. Using this epoxy solder paste P20, the first electrode P5 of the third light emitting device 153 is bonded to the second electrode P2 of the first light emitting device 151, and the third light emitting device The second electrode P6 of 153 and the first electrode P3 of the third light emitting device 151 may be bonded.

As described above, the electrodes P2-P5 and P3-P6 of the two light emitting devices 151-153 and 152-153 disposed in the vertical direction are bonded with low-temperature bonding, for example, an intermetallic compound layer or an epoxy solder paste, and then sintered. can be Accordingly, in the process of re-bonding the light emitting device package on the circuit board, it is possible to prevent a re-melting phenomenon from occurring in the bonding region in the light emitting device package.

Referring to FIG. 7C , the first and second electrodes P5 and P6 of the third light emitting device 153 are bonded to the lower electrodes P2 and P3 , for example, the first light emitting device 151 . The area of the second electrode P2 and the first electrode P3 of the second light emitting device 152 may be larger than, for example, 1.5 times or more. Since the area or width of the first and second electrodes P5 and P6 of the third light emitting device 153 is large, the third light emitting device 153 disposed on the first and second light emitting devices 151 and 152 is It can reduce the alignment error. Here, the two electrodes P2-P5 and P3-P6 facing each other may have an area on a plane facing each other, and the area of the first and second electrodes P5 and P6 of the third light emitting device 153 is a lower surface area, and the area of the second electrode P2 of the first light emitting device 151 corresponding thereto may be the top area, and the area of the first electrode P3 of the second light emitting device 152 may be the top area. The first electrode P1 of the first light emitting device 151 or the second electrode P4 of the second light emitting device 152 is an align mark for mounting the third light emitting device 153 . can be used as

FIG. 8 is a first modified example of the light emitting device package of FIG. 1 , wherein the first and second light emitting devices 151 and 152 are disposed in a first direction (X), and at least some of them may overlap in the second direction (Y). . The first light emitting device 151 may be disposed on the first frame 121 or disposed on the first frame 121 and the body 113 . The second light emitting device 152 may be disposed on the second frame 131 or disposed on the second frame 131 and the body 113 . The first and second light emitting devices 151 and 152 may be spaced apart from each other by a distance smaller than the length of the third light emitting device 153 in the second direction. The second direction may be a direction orthogonal to the first direction.

The third light emitting device 153 may be disposed in the second direction and disposed on the first light emitting device 151 and the second light emitting device 152 . The body 113 disposed between the first frame 121 and the second frame 131 may be arranged in a second direction and may overlap the third light emitting device 153 in a vertical direction. The sizes of the first to third light emitting devices 151 , 152 and 153 may be the same as each other, or the third light emitting device 153 may be larger than other devices, but is not limited thereto.

By arranging the first and second light emitting devices 151 and 152 to be spaced apart from each other and face each other in the second direction, a wire bonding region may be provided in the first frame 121 and the second frame 131 . The bonding direction of the wire may be a second direction, and the wire connected to the first light emitting device 151 may extend in the second direction to be bonded to the first frame 121 , and the second light emitting device 152 may be bonded to the first frame 121 . ) may extend in the second direction and be bonded to the second frame 131 .

The third light emitting device 153 may be connected to the first and second light emitting devices 151 and 152 by the bonding method disclosed above. The first and second light emitting devices 151 and 152 may emit blue light, and the third light emitting device 153 may emit green light. A molding part 181 having a red phosphor may be disposed in the cavity 112 , but the present invention is not limited thereto.

FIG. 9 is a second modified example of the light emitting device package of FIG. 1 .

Referring to FIG. 9 , a plurality of light emitting devices may be disposed on the first and second frames 121 and 131 .

The plurality of light emitting devices includes first and second light emitting devices 151 and 152 facing each other in a first direction, and the first and second light emitting devices 151 and 152 spaced apart from the first and second light emitting devices 151 and 152 in a second direction. ) and a third light emitting device 155, a fourth light emitting device 156 on the first and third light emitting devices 151 and 155, and the second light emitting device 152 and a third light emitting device 156 A fifth light emitting device 157 is included thereon. The first to third light emitting devices 151 , 152 , and 155 may emit blue light, and the fourth and fifth light emitting devices 156 and 157 may emit green light. As another example, the first to third light emitting devices 151 , 152 , and 155 may emit green light, and the fourth and fourth light emitting devices 156 and 157 may emit blue light.

The first and fourth light emitting devices 151 and 156 are disposed on the first frame 121 , the second and fifth light emitting devices 152 and 157 are disposed on the second frame 131 , and the third light emitting device 155 . may be disposed on the first and second frames 121 and 131 . The third light emitting device 155 may be disposed on the body 113 . Each of the electrodes of the fourth and fifth light emitting devices 156 and 157 may have a bonding structure between electrodes in which a bonding structure with other devices is disclosed above, and a detailed description thereof will be omitted. The light emitting devices may be connected in series.

FIG. 10 is a third modified example of the light emitting device package of FIG. 1 .

Referring to FIG. 10 , the body 113 disposed on the bottom of the cavity 112 is disposed between the first frame 121 and the second frame 131 . The body 113 may be disposed adjacent to the bottom edge of the cavity 112 rather than the center of the bottom. Accordingly, at the bottom of the cavity 112 , the area of the first frame 121 may be larger than the area of the second frame 131 , for example, it may be 1.5 times larger than the area of the second frame 131 .

The first light emitting device 151 is disposed on the first frame 121 , the second light emitting device 152 is disposed on the first and second frames 121 and 131 , and the third light emitting device 153 is disposed on the first and second frames 121 and 131 . It may be disposed on the second light emitting devices 151 and 152 . The third light emitting device 153 may not overlap the body 113 in a vertical direction. The second light emitting device 152 may be disposed to overlap the first and second frames 121 and 131 and the body 113 in a vertical direction. The second light emitting device 152 may be disposed on the first frame 121 and may be connected to the second frame 131 with a wire 142 .

11 is a side cross-sectional view illustrating a light emitting device package according to a second embodiment. In the description of FIG. 11 , the same parts as those of the first embodiment will be referred to the description of the first embodiment.

Referring to FIG. 11 , the first frame 121 and the second frame 131 disposed on the bottom of the cavity 112 may be disposed on different horizontal planes. In the cavity 112 , the second frame 131 may be disposed higher than the first frame 121 . The second frame 131 may be bent in the package body 110 to extend to the bottom of the cavity 112 . There is a height difference between the second frame 131 and the first frame 121 . A portion of the body 113 may extend to a lower portion of the second frame 131 .

A first light emitting device 151A may be disposed on the first frame 121 , and a second light emitting device 153A may be disposed on the first light emitting device 151A and the second frame 131 . The second light emitting device 153A may vertically overlap with the first light emitting device 151A, the second frame 131 and the body 113 . The first light emitting device 151A may emit blue light W4 as shown in FIG. 16 , and the second light emitting device 153A may emit green light W5 as shown in FIG. 16 . As another example, the first light emitting device 151A may emit green light, and the second light emitting device 153A may emit blue light. As another example, the first and second light emitting devices 151A and 153A may emit blue or green light having different peak wavelengths and different main wavelengths.

The molding part 181 in the cavity 112 may include a phosphor that covers the plurality of light emitting devices 151A and 153A and emits a color different from the blue and green, for example, a red phosphor. The color reproducibility may be improved by such multi-colored lights.

An adhesive 118 may be disposed between the second light emitting device 153A and the bottom of the cavity 112 . The adhesive 118 may be disposed between the body 113 and the second light emitting device 153A. The adhesive 118 may be in contact with the side surface of the first light emitting device 151A.

The first electrode P5 of the second light emitting device 152 is bonded to the second electrode P2 of the first light emitting device 151 , and the second electrode P6 of the second light emitting device 152 . The silver may be bonded to the second frame 131 with the intermetallic compound layer P30 or solder paste. Accordingly, in the process of re-bonding the light emitting device package on the circuit board, it is possible to prevent a re-melting phenomenon from occurring in the bonding region in the light emitting device package.

12 is a light source device in which the light emitting device package of FIG. 2 is disposed on a circuit board.

Referring to FIG. 12 , the light emitting device package 100 is disposed on a circuit board 201 . The circuit board 201 may be arranged in a light unit such as a display device, a terminal, a vehicle lamp, or a lighting device. The circuit board 201 may include a circuit layer electrically connected to the light emitting device package 100 . The circuit board 201 may include at least one of a resin material PCB, a metal core PCB (MCPCB, Metal Core PCB), a non-flexible PCB, and a flexible PCB (FPCB, Flexible PCB), but is not limited thereto. does not

Third and fourth electrode pads 211 and 213 are disposed on the circuit board 201 , and the third electrode pad 211 includes the first frame 121 of the light emitting device package 100 and the conductive adhesive 221 . is adhered to, and the fourth electrode pad 223 may be adhered to the second frame 131 of the light emitting device package 100 with a conductive adhesive 223 . The conductive adhesives 221 and 223 may include, for example, solder paste.

13 is an example of a light unit having a plurality of light emitting devices according to an embodiment.

Referring to FIG. 13 , a plurality of light emitting devices 151 , 152 , and 153 are disposed on a circuit board 201 . The plurality of light emitting devices 151 , 152 , and 153 include a first light emitting device 151 and a second light emitting device 152 , and a third light emitting device 153 on the first and second light emitting devices 151 and 152 . The first to third light emitting devices 151 , 152 and 153 include first electrodes P1 , P3 , and P5 and second electrodes P2 , P4 , and P6 . For the bonding structure of the first to third light emitting devices 151, 152, and 153 and the first and second electrodes P5 and P6 of the third light emitting device 153, the description disclosed in the first embodiment will be referred to. , a detailed description will be omitted.

The first and second light emitting devices 151 and 152 may emit blue light having different peak wavelengths and different main wavelengths, and the third light emitting device 153 may emit green light. The first and second light emitting devices 151 and 152 may emit green light having different peak wavelengths and different main wavelengths, and the third light emitting device 153 may emit blue light.

The first light emitting device 151 may be adhered to the upper surface of the circuit board 201 with an adhesive 218 . The adhesive 218 may include a conductive or insulating adhesive, and may be connected to the third electrode pad 211 of the circuit board 201 by a wire 241 . The third electrode pad 211 may be further disposed under the first light emitting device 151 to improve heat dissipation characteristics.

The second light emitting device 152 may be adhered to the upper surface of the circuit board 201 with an adhesive 219 . The adhesive 219 may include a conductive or insulating adhesive, and may be connected to the fourth electrode pad 213 of the circuit board 201 by a wire 243 . The fourth electrode pad 213 may be further disposed under the second light emitting device 152 to improve heat dissipation characteristics.

A red phosphor layer may be further disposed on at least one of the first and second light emitting devices 151 and 152 and the third light emitting device 153 , but the present invention is not limited thereto. As another example, a molding part covering the first to third light emitting devices 153 may be provided, and a red phosphor may be added to the molding part. Accordingly, it is possible to provide a light emitting unit capable of high color reproducibility having blue, green, and red colors and to control driving.

An adhesive (not shown) may be disposed between the third light emitting device 153 and the upper surface of the circuit board 201 . The adhesive may include a filler such as TiO ₂ having a high refractive index in the resin material, but is not limited thereto. The configuration of such an adhesive will be referred to the description of FIGS. 3 and 4 . At least one of the plurality of light emitting devices 151, 152, and 153 on the circuit board 201 overlaps with other light emitting devices and is connected in series with each other, thereby improving consumption efficiency, facilitating driving control by a driver, and improving color reproducibility. can give

The plurality of light emitting devices 151 , 152 , and 153 may be defined as a single light emitting part, and such a light emitting part may be arranged as a plurality of light emitting parts 150 and 150A as shown in FIG. 14 . Each of the plurality of light emitting units 150 and 150A may be driven by an individual driver. That is, each of the light emitting units 150 and 150A may be individually driven, emit light of two or more colors, and may have a peak wavelength greater than the number of colors, thereby improving color reproducibility.

The light emitting device package or the light emitting unit according to the embodiment may be applied to a light source device. The light source device may be applied to lamps such as a display device, a lighting device, a vehicle lamp, for example, a fog lamp, a side lamp, a turn indicator, a brake lamp, a tail lamp, a reversing lamp, a high beam, a low beam, and a fog lamp according to an industrial field.

The light source device may include at least one of an optical lens and an optical sheet having a light guide plate in the light emission area. As an example of the light source device, the display device includes a bottom cover, a reflecting plate disposed on the bottom cover, a light emitting module that emits light and includes a light emitting device, and is disposed in front of the reflecting plate and guides light emitted from the light emitting module to the front A light guide plate, an optical sheet including prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel; It may include a color filter disposed in front. Here, the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit. Also, the display device may have a structure in which light emitting devices emitting red, green, and blue light are respectively disposed without including a color filter.

As another example of the light source device, the head lamp is a light emitting module including a light emitting device package disposed on a substrate, a reflector that reflects light emitted from the light emitting module in a predetermined direction, for example, forward, and is reflected by the reflector It may include a lens that refracts light forward, and a shade that blocks or reflects a portion of light reflected by the reflector and directed to the lens to form a light distribution pattern desired by a designer.

A lighting device, which is another example of the light source device, may include a cover, a light source module, a heat sink, a power supply unit, an inner case, and a socket. Also, the light source device according to the embodiment may further include any one or more of a member and a holder. The light source module may include a light emitting device package according to an embodiment.

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, etc. illustrated in each embodiment can be combined or modified for other embodiments by a person skilled in the art to which the embodiments belong. Therefore, the contents related to such combinations and modifications should be interpreted as being included in the scope of the embodiment.

In the above, the embodiment has been mainly described, but this is only an example, and does not limit the embodiment, and those of ordinary skill in the art to which the embodiment pertains may find several not illustrated above within a range that does not depart from the essential characteristics of the embodiment. It can be seen that the transformation and application of branches are possible. For example, each component specifically shown in the embodiment can be implemented by modification. And the differences related to these modifications and applications should be interpreted as being included in the scope of the embodiments set forth in the appended claims.

110: package body
121: first frame
131: second frame
113: body
118: adhesive
151,152,153,151A,153A,155,156,157: light emitting device
P1, P3, P5: first electrode
P2, P4, P6: second electrode
181: molding unit
201: circuit board
211: first electrode pad
213: second electrode pad
P10, P11: intermetallic compound layer

Claims (10)

first and second frames spaced apart from each other;
a body disposed between the first and second frames; and
a first light emitting device having first and second electrodes and disposed on the first frame;
a second light emitting device having first and second electrodes and disposed on the body; and
and an adhesive disposed between the second light emitting element and the body,
The wavelength with the greatest intensity among the wavelengths of the light emitted from the first light emitting device and the wavelength with the greatest intensity among the wavelengths of the light emitted from the second light emitting device are different from each other,
The second electrode of the first light emitting device overlaps the first electrode of the second light emitting device in a first direction perpendicular to the upper surface of the first frame,
and a first intermetallic compound layer disposed between the second electrode of the first light emitting device and the first electrode of the second light emitting device. The method of claim 1,
A third light emitting device having first and second electrodes and disposed on the second frame,
The wavelength with the greatest intensity among the wavelengths of light emitted from the third light emitting device is different from the wavelength with the greatest intensity among the wavelengths of light emitted from the first and second light emitting devices,
The first electrode of the third light emitting device overlaps the second electrode of the second light emitting device in a second direction perpendicular to the upper surface of the second frame,
and a second intermetallic compound layer disposed between the first electrode of the third light emitting device and the second electrode of the second light emitting device. delete The method of claim 1,
The second electrode of the second light emitting device overlaps the second frame in a direction perpendicular to an upper surface of the second frame. 3. The method of claim 2,
The first and third light emitting devices emit different blue peak wavelengths and main wavelengths,
The second light emitting device emits a green peak wavelength,
A light emitting device package including a molding part having a red phosphor on the first to third light emitting devices. delete 3. The method of claim 2,
The first and second intermetallic compound layers include at least one of Ag _x In _y , Cu _x Sn _y , Ag _x Sn _y , Au _x Sn _y , Cu _x Ni _y , wherein x is 0<x<1, y =1-x light emitting device package. delete delete The method of claim 1,
A light emitting device package in which an upper surface of the second frame is disposed higher than an upper surface of the first light emitting device.

Images