KR102350586B1 - Method of forming fine patterns - Google Patents

Abstract

The method for forming a fine pattern according to the technical concept of the present invention comprises the steps of forming a plurality of cylindrical guides regularly arranged on a layer to be etched, forming a liner on the exposed surfaces of the plurality of cylindrical guides and the layer to be etched, a plurality of forming a block copolymer layer covering the cylindrical guide and the layer to be etched; forming a plurality of first domains in a regular arrangement by phase-separating the block copolymer layer and a second domain surrounding the plurality of first domains, respectively; The method includes removing the plurality of first domains, and forming a plurality of holes in the etched layer by etching the etched layer using the plurality of cylindrical guides and the second domains as an etch mask.

Description

Method of forming fine patterns

The technical idea of the present invention relates to a method for forming a fine pattern, and more particularly, to a method for forming a fine pattern using a block copolymer.

As the degree of integration of semiconductor devices increases, the area occupied by each unit cell in a planar manner decreases. In response to such a reduction in the unit cell area, a design rule of a smaller nanoscale critical dimension (CD) of several to tens of nm is applied, and accordingly, the nanoscale opening size is reduced. There is a need for a new fine pattern formation method capable of improving CD uniformity.

The problem to be solved by the technical idea of the present invention is to easily form a plurality of hole patterns repeatedly formed at a fine pitch in forming a pattern required for manufacturing a high-integration semiconductor device that exceeds the resolution limit in a photolithography process. It is to provide a method for forming a fine pattern.

The problems to be solved by the technical spirit of the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

A method of forming a fine pattern according to an embodiment according to the technical idea of the present invention includes: forming a plurality of cylindrical guides regularly arranged on a layer to be etched; forming a liner on the plurality of cylindrical guides and the exposed surfaces of the layer to be etched; forming a block copolymer layer covering the plurality of cylindrical guides and the layer to be etched; forming a plurality of first domains in a regular arrangement by phase-separating the block copolymer layer and a second domain surrounding the plurality of first domains, respectively; removing the plurality of first domains; and forming a plurality of holes in the etched layer by etching the etched layer using the plurality of cylindrical guides and the second domain as an etch mask.

In exemplary embodiments, the thickness of the thickest portion of the block copolymer layer is 1 to 1.5 times the height of the plurality of cylindrical guides.

In exemplary embodiments, a difference between the outer diameter and the inner diameter of the plurality of cylindrical guides is greater than a diameter of the plurality of first domains.

In example embodiments, the liner may include: a first liner formed on an exposed surface of the etched layer and an upper surface of the plurality of cylindrical guides; and a second liner formed on sidewalls of the plurality of cylindrical guides, wherein chemical properties of the first liner and the second liner are different from each other.

In exemplary embodiments, the plurality of cylindrical guides are formed to be arranged in a hexagonal array having a first pitch that is at least three times the _{bulk period L 0 of the block copolymer layer, and the bulk period L 0 of the block copolymer layer} is characterized in that it is 20 to 40 nm.

In example embodiments, the plurality of first domains may include a domain A formed in a central portion of the plurality of cylindrical guides, a domain B formed above the plurality of cylindrical guides, and a space between the plurality of cylindrical guides. It includes a domain C formed in , and is characterized in that it is regularly arranged with a second pitch smaller than the first pitch.

In exemplary embodiments, the height of the domain B is smaller than the height of the domain A or the domain C.

In example embodiments, the plurality of holes may have a third pitch, and the third pitch may be greater than the second pitch.

In an exemplary embodiment, the plurality of the cylindrical guide is formed so as to be arranged as a hexagonal array with 1.73 times the first pitch of the bulk period L ₀ of the block copolymer layer, the bulk period of the block copolymer layer L ₀ is It is characterized in that 40 to 60 nm.

In exemplary embodiments, the inner diameter of the plurality of cylindrical guides is the same as _{the bulk period L 0 of the block copolymer layer.}

According to the method of forming a fine pattern according to the technical idea of the present invention, block copolymerization having a relatively short bulk cycle using a plurality of cylindrical guides in the phase separation process using the block copolymer layer and the process of forming the self-assembled layer obtained by phase separation By forming a fine pattern having a relatively large pitch even with a sieve, a plurality of hole patterns repeatedly formed at a fine pitch can be easily formed in forming a pattern required for manufacturing a highly integrated semiconductor device that exceeds the resolution limit in the photolithography process. can be formed

1A and 1B to 12A and 12B are views illustrating a process sequence in order to explain a method of forming a fine pattern according to an embodiment according to the technical idea of the present invention, and FIGS. 1A, 2A, ..., and FIG. 12A is a plan view illustrating main parts for explaining a method of forming a fine pattern, and FIGS. 1B, 2B, ..., and 12B are AA of FIGS. 1A, 2A, ..., and 12A, respectively. ' It is a cross-section of a line.
13 is a plan view for explaining in more detail a first domain and a second domain formed according to a method of forming a fine pattern according to an embodiment of the inventive concept;
14 is a diagram schematically illustrating a self-assembly structure of polymers included in a self-assembly layer formed according to a method for forming a fine pattern according to an embodiment of the technical idea of the present invention.
15 is a system including an integrated circuit device manufactured by the method for forming a fine pattern according to the technical concept of the present invention.
16 is a memory card including an integrated circuit device manufactured by the method for forming a fine pattern according to the technical concept of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The same reference numerals are used for the same components in the drawings, and duplicate descriptions thereof are omitted.

The embodiments of the present invention are provided to more completely explain the present invention to those of ordinary skill in the art, and the following embodiments may be modified in various other forms, and the scope of the present invention It is not limited to the following examples. Rather, these examples are provided so that this disclosure will be more thorough and complete, and will fully convey the spirit of the invention to those skilled in the art.

Although the terms first, second, etc. are used herein to describe various members, regions, layers, regions, and/or components, these members, parts, regions, layers, regions, and/or components refer to these terms. It is self-evident that it should not be limited by These terms do not imply a specific order, upper and lower, or superiority, and are used only to distinguish one member, region, region, or component from another member, region, region, or component. Accordingly, a first member, region, region, or component described below may refer to a second member, region, region, or component without departing from the teachings of the present invention. For example, without departing from the scope of the present invention, a first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

Unless defined otherwise, all terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the inventive concept belongs, including technical and scientific terms. In addition, commonly used terms as defined in the dictionary should be construed as having a meaning consistent with their meaning in the context of the relevant technology, and unless explicitly defined herein, in an overly formal sense. It will be understood that they shall not be construed.

In cases where certain embodiments may be implemented otherwise, a specific process sequence may be performed different from the described sequence. For example, two processes described in succession may be performed substantially simultaneously, or may be performed in an order opposite to the described order.

In the accompanying drawings, variations of the illustrated shapes can be expected, for example depending on manufacturing technology and/or tolerances. Accordingly, the embodiments of the present invention should not be construed as limited to the specific shape of the region shown in the present specification, but should include, for example, changes in shape resulting from the manufacturing process. As used herein, all terms “and/or” include each and every combination of one or more of the recited elements.

1A and 1B to 12A and 12B are views illustrating a process sequence in order to explain a method of forming a fine pattern according to an embodiment according to the technical idea of the present invention, and FIGS. 1A, 2A, ..., and FIG. 12A is a plan view illustrating main parts for explaining a method of forming a fine pattern, and FIGS. 1B, 2B, ..., and 12B are AA of FIGS. 1A, 2A, ..., and 12A, respectively. ' It is a cross-section of a line.

In the drawings, only a part of the entire micro-pattern is shown for convenience of explanation, but the present invention is not limited thereto.

1A and 1B , an etched layer 104 is formed on a substrate 102 , and a first mask layer 106 and a second mask layer 108 are sequentially formed on the etched layer 104 . do.

The substrate 102 may be formed of a semiconductor substrate. In some embodiments, the substrate 102 may be made of a semiconductor such as Si or Ge. In some other embodiments, the substrate 102 may include a compound semiconductor such as SiGe, SiC, GaAs, InAs, or InP. In some other embodiments, the substrate 102 may have a silicon on insulator (SOI) structure. The substrate 102 may include a conductive region, for example, a well doped with an impurity or a structure doped with an impurity. In addition, the substrate 102 may have various device isolation structures such as a shallow trench isolation (STI) structure.

The layer to be etched 104 may be an insulating layer or a conductive layer. For example, the to-be-etched layer 104 may be formed of a metal, alloy, metal carbide, metal nitride, metal oxynitride, metal oxycarbide, semiconductor, polysilicon, oxide, nitride, oxynitride, hydrocarbon compound, or a combination thereof. However, the present invention is not limited thereto. When the pattern to be finally formed is implemented on the substrate 102 , the layer to be etched 104 may be omitted.

The first mask layer 106 may constitute a guide forming structure for forming a plurality of cylindrical guides to be described later.

In some embodiments, the first mask layer 106 may be formed of a carbon-containing film such as a spin-on hardmask (SOH) material, a silicon oxide film, or a combination thereof. The carbon-containing film made of the SOH material may be formed of an organic compound having a relatively high carbon content of about 85 to 99% by weight based on the total weight thereof. The organic compound may be composed of a hydrocarbon compound containing an aromatic ring, such as phenyl, benzene, or naphthalene, or a derivative thereof.

The second mask layer 108 may be formed of a material different from that of the first mask layer 106 . In some embodiments, the second mask layer 108 may serve as an anti-reflection layer.

In some embodiments, the second mask layer 108 may be formed of a material containing Si. For example, the second mask layer 108 may be formed of a silicon nitride film, a silicon oxide film, a silicon oxynitride film, a silicon carbonitride film, or a combination thereof, but is not limited thereto.

A third mask pattern 110 is formed on the second mask layer 108 .

The inner diameter of the cylindrical guide, which will be described later, may be determined by the width W1 of each of the third mask patterns 110 . The third mask pattern 110 may be arranged in a regular shape. For example, it may be formed to be arranged in a hexagonal array or a matrix array.

The third mask pattern 110 may be formed of photoresist. In some embodiments, the third mask pattern 110 is a resist for a KrF excimer laser (248 nm), a resist for an ArF excimer laser (193 nm), a resist for an F ₂ excimer laser (157 nm), or extreme ultraviolet rays (13.5 nm). It may be made of a resist.

Referring to FIGS. 2A and 2B , the first mask layer 106 and the second mask layer 108 are etched using the third mask pattern 110 (see FIGS. 1A and 1B ) as an etch mask to form a first A mask pattern 106P and a second mask pattern 108P are formed. As a result, a plurality of guide forming structures GS including the first mask pattern 106P and the second mask pattern 108P are formed.

The plurality of guide structures GS may be arranged in a regular shape. For example, the plurality of guide structures GS may be formed to be arranged in a hexagonal array or a matrix array.

Referring to FIGS. 3A and 3B , the guide forming layer 112 conformally covering the plurality of guide forming structures GS and the etched layer 104 is formed.

The guide forming layer 112 may be made of a material containing Si. In some embodiments, the guide forming layer 112 may be formed of silicon oxide. In some embodiments, an atomic layer deposition (ALD) or chemical vapor deposition (CVD) process may be used to form the guide forming layer 112 .

4A and 4B , a front etch-back process is performed to expose a top surface of the second mask pattern 108P and a portion of the top surface of the etched layer 104 .

An etch-back process is performed to form a cylindrical guide pattern 112P surrounding the sidewall of the structure for forming the guide SG. The height and width of the cylindrical guide pattern 112P are adjusted by adjusting the etch-back process time.

5A and 5B , the second mask pattern 108P and the cylindrical guide pattern 112P (see FIGS. 4A and 4B ) may be etched to obtain a cylindrical guide 112C having a desired shape.

A cylindrical guide 112C is formed on a sidewall of the first mask pattern 106P. A plurality of the cylindrical guides 112C may exist. The cylindrical guide 112C may be arranged in a regular shape. For example, it may be formed to be arranged in a hexagonal array or a matrix array.

6A and 6B , the first mask pattern 106P (refer to FIGS. 5A and 5B ) present in the center of the cylindrical guide 112C is removed.

In some embodiments, the cylindrical guide 112C may have a hollow shape. That is, the cylindrical guide 112C may be formed in a shape with an empty center instead of a pillar-shaped guide having a cylindrical shape.

As will be described later, since the block copolymer can be self-assembled into the empty central portion of the cylindrical guide 112C, a regular fine pattern can be obtained.

In some embodiments, the plurality of cylindrical guides 112C may be formed to be arranged in a hexagonal array having a first pitch P1 that is 1.73 times the _{bulk period L 0 of the block copolymer layer 202 .} In this case, the inner diameter of the plurality of cylindrical guides 112C may be the same as _{the bulk period L 0 of the block copolymer layer.} That is, the size of the inner diameter of the cylindrical guide 112C can be adjusted so that the domain A 202A formed in the center of the plurality of cylindrical guides 112C _{can be self-assembled with a bulk period L 0 .} In this case, the bulk period L ₀ of the block copolymer layer may be 40 to 60 nm.

Depending on what type of block copolymer is used, and also depending on what arrangement of the cylindrical guide 112C is formed, the pitch and arrangement of the finally formed fine pattern may vary.

Referring to FIGS. 7A and 7B , a liner 114 covering the exposed surface of the etched layer 104 and upper surfaces and sidewalls of the plurality of cylindrical guides 112C is formed.

In some embodiments, the liner 114 has a higher affinity for the first polymer block PB1 than the affinity for the second polymer block PB2 among the constituent materials of the paper assembly layer 202S, which will be described later with reference to FIGS. 13 and 14 . ) may include a material having a greater affinity for

In some embodiments, the liner 114 may be formed of a polymer layer containing polystyrene (PS) as a main component. In this case, in a subsequent process, the constituent material of the block copolymer layer 202 formed around the plurality of cylindrical guides 112C, for example, poly(methyl methacrylate) (PMMA) and PS, has PS affinity. can make it happen

In some embodiments, the liner 114 includes a first liner 114A formed on the exposed surface of the layer to be etched and upper surfaces of the plurality of cylindrical guides, and a second liner formed on sidewalls of the plurality of cylindrical guides ( 114B), and chemical properties of the first liner 114A and the second liner 114B may be different from each other. That is, the first liner 114A may include a material having a greater affinity for the first polymer block PB1 than for the second polymer block PB2 among the constituent materials of the block copolymer layer 202 . have. Alternatively, the second liner 114B may include a material having a greater affinity for the second polymer block PB2 than the affinity for the first polymer block PB1 among the constituent materials of the block copolymer layer 202 . can

In this way, when the liner 114 is formed of the first liner 114A and the second liner 114B, after the block copolymer layer 202 is phase-separated, the periphery of the plurality of cylindrical guides 112C is not desired. It is possible to prevent the occurrence of defects in which the non-existent PMMA domains remain in a ring shape or an intermittent ring shape.

Referring to FIGS. 8A and 8B , the block copolymer layer 202 covering both the etched layer 104 covered with the liner 114 and the plurality of cylindrical guides 112C is formed. The block copolymer layer 202 is made of a block copolymer including a first polymer block having a first repeating unit and a second polymer block having a second repeating unit.

In some embodiments, the block copolymer may be formed of a linear or branched polymer having a molecular weight of about 3,000 to 2,000,000 g/mol.

In the block copolymer, the first polymer block may be poly(methyl methacrylate) (PMMA), poly(ethylene oxide) (PEO), poly(lactic acid) (PLA), or polyisoprene (PI). The second polymer block may be polystyrene (PS).

In some embodiments, the volume ratio of the first polymer block to the second polymer block in the block copolymer may be about 20:80 to about 40:60.

In some embodiments, the block copolymer layer 202 may be formed using a dip coating, solution casting, or spin-coating process.

In some embodiments, the height H2 of the thickest part of the block copolymer layer 202 is from one time the height H1 of the cylindrical guide 112C to the height of the cylindrical guide 112C ( It can be formed up to 1.5 times the height of H1). When the block copolymer layer 202 is formed in this way, the effects of the cylindrical guide 112C and the liner 114 work most efficiently, so that the first domain 202X (see FIGS. 9A and 9B ) is regularly magnetic. can be assembled.

9A and 9B, the block copolymer layer 202 (see FIGS. 8A and 8B) is phase-separated, and a plurality of first domains 202X including the first polymer block, and the second polymer block to form a self-assembled layer 202S including second domains 202Y surrounding the plurality of cylindrical guides 112C and the plurality of first domains 202X, respectively.

For phase separation of the block copolymer layer 202 , the block copolymer layer 202 may be annealed at a temperature higher than the glass transition temperature (Tg) of the block copolymer in the block copolymer layer 202 . For example, in order to phase-separate the block copolymer layer 202 , the block copolymer layer 202 may be annealed at a temperature selected within a range of about 130 to 190° C. for about 1 to 24 hours. The annealing time may increase as the _{bulk period L 0 to be described later increases.}

The plurality of first domains 202X may form a regular arrangement together with the plurality of cylindrical guides 112C. For example, the second pitch P2 smaller than the first pitch P1 by the plurality of first domains 202X and the plurality of cylindrical guides 112C, which will be described later with reference to FIGS. 13 and 14 . A hexagonal array arranged as .

In some embodiments, the plurality of first domains 202X formed by the phase separation process of the block copolymer layer 202 include the domain A 202A formed in the center of the plurality of cylindrical guides 112C, the Domain B 202B formed on the plurality of cylindrical guides 112C and domain C 220C formed in a central portion between three cylindrical guides 112C adjacent to each other among the plurality of cylindrical guides 112C ) can be self-assembled. That is, although the plurality of first domains are made of the same material, they may be subdivided according to positions where they are formed. The first domain may have a hexagonal array shape arranged at the second pitch P2. In the case of the domain B 202B formed on the plurality of cylindrical guides 112C, growth cannot be achieved as much as the height of the cylindrical guide 112C, and thus the domain A 202A and the domain C 202C. may be smaller than the

In addition, in the case of the domain B 202B, since it should be formed on the cylindrical guide 112C, the diameter L2 of the domain B 202B is the difference between the outer diameter and the inner diameter of the cylindrical guide 112C ( It may be smaller than L1).

That is, according to the technical idea of the present invention, since the bottom surface of the domain B 202B may be included in the top surface of the cylindrical guide 112C, the domain B 202B of the first domain 202X is the etched layer 104 . ) may not be transferred.

The first domains 202X are regularly arranged at intervals of the second pitch P2 so that the third domains B 202B can be formed on the cylindrical guide 112C in FIGS. 1A and 1B. The mask pattern 110 may be adjusted.

13 is a plan view illustrating the first domain 202X and the second domain 202Y illustrated in FIGS. 9A and 9B in more detail.

Referring to FIG. 13 , the plurality of first domains 202X included in the self-assembly layer 202S and the second domain 202Y surrounding the plurality of first domains 202X will be described in more detail.

In some embodiments, a domain A 202A in which a plurality of first domains 202X is formed at a central portion of the plurality of cylindrical guides 112C, and a domain B formed over the plurality of cylindrical guides 112C. In order to be self-assembled into a domain C (220C) formed in a central portion between 202B and three adjacent cylindrical guides (112C) among the plurality of cylindrical guides (112C), the plurality of cylindrical guides When forming 112C, the plurality of cylindrical guides 112C may be formed to be arranged in a hexagonal array having a first pitch P1 of about three times the _{bulk period L 0 of the block copolymer layer.} .

14 is a diagram schematically illustrating a self-assembly structure of polymers included in the self-assembly layer 202S.

Referring to FIG. 14 , a self-assembled structure of polymers included in the local region LR indicated by a dotted circle of the self-assembled layer 202S obtained as a result of the phase separation process described in FIG. 13 is schematically shown.

In the self-assembled layer 202S, a bonding structure of the first polymer block PB1 constituting the plurality of first domains 202X and the second polymer block PB2 constituting the second domain 220Y is exemplified. has been _{The bulk period L 0} determined in the bonding structure of the first polymer block (PB1) and the second polymer block (PB2), that is, the intrinsic repeating unit of the self-assembled structure obtained as a result of self-assembly from the block copolymer layer 202 The bulk period L ₀ corresponding to the pitch may be about 20 to 60 nm.

10A and 10B , the plurality of first domains 202X is removed from the self-assembly layer 202S (see FIGS. 9A and 9B ).

In some embodiments, in order to selectively remove only the plurality of first domains 202X of the self-assembled layer 202S, a polymer decomposer is applied to the self-assembled layer 202S to remove the plurality of first domains 202X. After selectively decomposing the first domains 202X, a process of stripping the plurality of decomposed first domains 202X using a cleaning solution, for example, isopropyl alcohol (IPA) may be performed.

In some embodiments, radiation or plasma may be used as the polymer decomposition means. The radiation may be provided under an oxygen atmosphere, and may be deep ultraviolet (DUV), soft X-ray, or E-beam. The plasma may be an oxygen plasma. In order to selectively decompose the plurality of first domains 202X, the type or energy of the polymer decomposition means may be selected. For example, the plurality of first domains 202X and the second domain 202Y may have different threshold energies at which decomposition may start. Accordingly, radiation or plasma having energy capable of selectively decomposing only the plurality of first domains 202X among the plurality of first domains 202X and second domains 202Y is applied to the self-assembled layer 202S. can The radiation energy or plasma energy can be controlled by the radiation time or plasma exposure time.

When the first domain 202X is removed, a first domain hole 202XH is formed in its place. The first domain hole 202XH may include a domain A hole 202AH, a domain B hole 202BH, and a domain C hole 202CH according to a formed position. The domain A hole 202AH, the domain B hole 202BH, and the domain C hole 202CH are formed in the place where the domain A 202A, the domain B 202B, and the domain C 202C were, respectively.

11A and 11B , the liner 114 and the etched layer 104 exposed using the plurality of cylindrical guides 112C and the second domain 202Y as an etch mask ( FIGS. 10A and 10B ) reference) to form an etched layer pattern 104P having a plurality of holes 104PH corresponding to the arrangement shape of the domain A 202A and the domain C 202C among the plurality of first domains 202X.

An etching process may be performed to form the etched layer pattern 104P, and the plurality of cylindrical guides 112C and the second domains 202Y used as an etch mask may also be partially etched.

12A and 12B , unnecessary layers remaining on the etched layer pattern 104P are removed to expose the upper surface of the etched layer pattern 104P.

The cylindrical guide 112C, the liner pattern 114P, and the second domain pattern 202Y2 (refer to FIGS. 11A and 11B ) present on the upper surface of the etched layer pattern 104P are removed.

13 and 14 , a fine pattern may be formed by selecting the first polymer block PB1 and the second polymer block PB2 of the block copolymer to match the desired pitch of the fine pattern. _{The block copolymer may have various bulk cycles L 0} depending on the types of the first polymer block PB1 and the second polymer block PB2 constituting the block copolymer. In the case of a block copolymer having a large bulk period L ₀ , the heat treatment time for self-assembly may take a relatively long time compared to a block copolymer having a small _{bulk period L 0 .} In order to self-assemble by heat treatment for a short time, a block copolymer having a small _{bulk period L 0 is selected. In the case of using a block copolymer having a large bulk period L 0} because the third pitch P3, which is a desired fine pattern interval, is relatively long, productivity may decrease due to a long heat treatment time required.

Therefore, in the method of forming a fine pattern according to the technical idea of the present invention, a fine pattern having a second pitch P2 is formed on the etched layer 104 even when a block copolymer having a relatively small _{bulk period L 0 is used.} Instead, a portion of the first domain 202X of the self-assembled layer 202S does not form a hole in the layer 104 to be etched by the plurality of cylindrical guides 112C, so that the third pitch is longer than the second pitch P2. Holes 104PH having a pitch P3 may be formed in the layer 104 to be etched.

15 is a system 1000 including an integrated circuit device manufactured by the method for forming a fine pattern according to the technical concept of the present invention.

The system 1000 includes a controller 1010 , an input/output device 1020 , a storage device 1030 , and an interface 1040 . The system 1000 may be a mobile system or a system for transmitting or receiving information. In some embodiments, the mobile system is a PDA, portable computer, web tablet, wireless phone, mobile phone, digital music player, or memory card. (memory card). The controller 1010 is for controlling an executable program in the system 1000 , and may include a microprocessor, a digital signal processor, a microcontroller, or a similar device. The input/output device 1020 may be used to input or output data of the system 1000 . The system 1000 may be connected to an external device, for example, a personal computer or a network, using the input/output device 1020 , and may exchange data with the external device. The input/output device 1020 may be, for example, a keypad, a keyboard, or a display.

The storage device 1030 may store codes and/or data for the operation of the controller 1010 or data processed by the controller 1010 . The memory device 1030 includes at least one integrated circuit device obtained by the pattern forming method according to the embodiments according to the inventive concept. For example, the memory device 1030 includes at least one integrated circuit device obtained by any one of the methods of forming a fine pattern described with reference to FIGS. 1A to 12B .

The interface 1040 may be a data transmission path between the system 1000 and another external device. The controller 1010 , the input/output device 1020 , the storage device 1030 , and the interface 1040 may communicate with each other via the bus 1050 . The system 1000 may be used in a mobile phone, an MP3 player, a navigation system, a portable multimedia player (PMP), a solid state disk (SSD), or household appliances. can be used

16 is a memory card 1100 including an integrated circuit device manufactured by the method for forming a fine pattern according to the technical idea of the present invention.

The memory card 1100 includes a storage device 1110 and a memory controller 1120 .

The storage device 1110 may store data. In some embodiments, the memory device 1110 may have a non-volatile characteristic capable of maintaining stored data even when power supply is interrupted. The memory device 1110 includes at least one integrated circuit device obtained by the pattern forming method according to the embodiments according to the inventive concept. For example, the memory device 1110 includes at least one integrated circuit device obtained by any one of the methods of forming a fine pattern described with reference to FIGS. 1A to 12B .

The memory controller 1120 may read data stored in the memory device 1110 or store data in the memory device 1110 in response to a read/write request from the host 1130 . The memory controller 1120 includes at least one integrated circuit device obtained by the method according to the embodiments according to the inventive concept. For example, the memory controller 1120 includes at least one integrated circuit device obtained by any one of the methods of forming a fine pattern described with reference to FIGS. 1A to 12B .

In the above, the present invention has been described in detail with reference to preferred embodiments, but the present invention is not limited to the above embodiments, and various modifications and variations by those skilled in the art within the technical spirit and scope of the present invention Changes are possible.

112C: cylindrical guide
202: block copolymer layer
202A: domain A, 202B: domain B, 202C: domain C

Claims (10)

forming a plurality of cylindrical guides regularly arranged on the layer to be etched;
forming a liner on the plurality of cylindrical guides and the exposed surfaces of the layer to be etched;
forming a block copolymer layer covering the plurality of cylindrical guides and the layer to be etched;
forming a plurality of first domains in a regular arrangement by phase-separating the block copolymer layer and a second domain surrounding the plurality of first domains, respectively;
removing the plurality of first domains; and
forming a plurality of holes in the layer to be etched by etching the layer to be etched using the plurality of cylindrical guides and the second domain as an etch mask,
The liner includes a first liner formed on an exposed surface of the layer to be etched and an upper surface of the plurality of cylindrical guides, and a second liner formed on sidewalls of the plurality of cylindrical guides, the first liner and the second liner A method of forming a fine pattern, characterized in that the chemical properties of the According to claim 1,
The height of the thickest part of the block copolymer layer is 1 to 1.5 times the height of the plurality of cylindrical guides. According to claim 1,
The difference between the outer diameter and the inner diameter of the plurality of cylindrical guides is a method of forming a fine pattern, characterized in that greater than the diameter of the plurality of first domains. delete According to claim 1,
The plurality of cylindrical guides are formed to be arranged in a hexagonal array having a first pitch that is at least three times the _{bulk period L 0 of the block copolymer layer,
The bulk period L 0} of the block copolymer layer is a method of forming a fine pattern, characterized in that 20 to 40nm. 6. The method of claim 5,
The plurality of first domains includes a domain A formed in the center of the plurality of cylindrical guides, a domain B formed on the plurality of cylindrical guides, and a domain C formed between the plurality of cylindrical guides. and a method of forming a fine pattern, characterized in that it is regularly arranged with a second pitch smaller than the first pitch. 7. The method of claim 6,
A height of the domain B is smaller than a height of the domain A or the domain C. 7. The method of claim 6,
The plurality of holes have a third pitch,
The third pitch is a fine pattern forming method, characterized in that greater than the second pitch. According to claim 1,
The plurality of cylindrical guides are formed to be arranged in a hexagonal array having a first pitch that is 1.73 times the _{bulk period L 0 of the block copolymer layer,
The bulk period L 0} of the block copolymer layer is a method of forming a fine pattern, characterized in that 40 to 60nm. 10. The method of claim 9,
The inner diameters of the plurality of cylindrical guides are the same as _{the bulk period L 0 of the block copolymer layer.}

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