KR102315663B1 - Method and Apparatus for treating a substrate - Google Patents

Abstract

The present invention provides a method of processing a substrate. A method of processing a substrate, comprising: heating the substrate to evaporate moisture remaining on the substrate provided in a processing space of a process chamber; After the heating step, a hydrophobization treatment step of supplying a hydrophobization gas to the substrate may be included.

Description

Substrate processing method and substrate processing apparatus TECHNICAL FIELD

The present invention relates to a method for processing a substrate and an apparatus for processing a substrate.

A photo-lithography process among semiconductor manufacturing processes is a process of forming a desired pattern on a wafer. The photographic process is usually carried out in a spinner local facility that is connected to an exposure facility and continuously processes the coating process, the exposure process, and the developing process. This spinner facility sequentially performs a hexamethyl disilazane (HMDS) treatment process, a coating process, a heat treatment process, and a developing process. Here, the HMDS treatment process is a process of supplying HMDS gas onto the wafer before application of the photoresist in order to increase the adhesion efficiency of the photoresist (PR).

In order to increase the adhesion efficiency of the photoresist, the contact angle between the HMDS gas and the wafer should be appropriately adjusted. For example, when the contact angle between the HMDS gas and the wafer is larger or smaller than the target value, the adhesion efficiency between the photoresist solution supplied to the wafer after the HMDS processing process and the wafer is lowered. The contact angle is affected by the thickness or structure of the moisture layer remaining on the wafer and the relative humidity in the process chamber. The moisture layer remaining on the wafer, and moisture in the process chamber, act as a catalyst when HMDS reacts with the wafer. That is, when the thickness of the moisture layer remaining on the wafer is large or the relative humidity in the process chamber is high, the contact angle between the HMDS gas and the wafer is increased. When the contact angle is greater than the target value, a pushing phenomenon occurs in which the photoresist is pushed in one direction from the upper surface of the wafer in a photoresist application process performed later.

An object of the present invention is to provide a substrate processing method and a substrate processing apparatus for efficiently processing a substrate.

Another object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of controlling a contact angle between a substrate and a hydrophobizing gas by adjusting the thickness of the moisture layer remaining on the substrate and/or the relative humidity in the process chamber. do it with

Another object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of efficiently evacuating organic gas generated in the process of processing a substrate by supplying a gas.

The problems to be solved by the present invention are not limited thereto, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

The present invention provides a method of processing a substrate. A method of processing a substrate, comprising: heating the substrate to evaporate moisture remaining on the substrate provided in a processing space of a process chamber; After the heating step, a hydrophobization treatment step of supplying a hydrophobization gas to the substrate may be included.

According to one embodiment, after the hydrophobic treatment step, a gas supply step of supplying an inert gas to the processing space may be included.

According to an embodiment, in the heating step, the hydrophobicization treatment step, and the gas supply step, the processing space may be exhausted from an edge region of the process chamber in an upward direction.

According to an embodiment, in the hydrophobization treatment step, the processing space may be exhausted upward from the center region of the process chamber.

The present invention also provides an apparatus for processing a substrate. An apparatus for processing a substrate, comprising: a process chamber having a processing space therein; a support unit supporting a substrate in the processing space and heating the supported substrate; a gas supply unit supplying a hydrophobization gas or an inert gas to the processing space; an exhaust unit for exhausting the processing space; a controller, wherein the controller may control the support unit and the gas supply unit to heat the substrate supported by the support unit and then supply the hydrophobization gas to the substrate supported by the support unit.

According to an embodiment, the controller may control the gas supply unit to supply the inert gas to the processing space after the hydrophobization gas is supplied.

In an exemplary embodiment, the exhaust unit may include: a lower exhaust unit configured to exhaust the processing space in a downward direction; It may include an upper exhaust for exhausting the processing space in an upward direction.

In an embodiment, the upper exhaust unit may include: an edge exhaust line provided in an edge region of the process chamber; A center exhaust line provided in a center region of the process chamber may be included.

According to an embodiment, the controller is configured such that the edge exhaust line is connected to the processing space while the support unit heats the substrate, the gas supply unit supplies the hydrophobization gas, or the gas supply unit supplies the inert gas. It is possible to control the exhaust unit to exhaust the.

According to an embodiment, the controller may control the exhaust unit such that the center exhaust line exhausts the processing space while the gas supply unit supplies the hydrophobized gas.

According to an embodiment of the present invention, it is possible to efficiently process the substrate.

In addition, according to an embodiment of the present invention, the contact angle between the substrate and the hydrophobizing gas may be adjusted by adjusting the thickness of the moisture layer remaining on the substrate and/or the relative humidity in the process chamber.

According to an embodiment of the present invention, it is possible to efficiently exhaust the organic gas generated in the process of processing the substrate by supplying the gas.

Effects of the present invention are not limited to the above-described effects, and effects not mentioned will be clearly understood by those of ordinary skill in the art to which the present invention belongs from the present specification and accompanying drawings.

1 is a perspective view schematically showing a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view of the substrate processing apparatus showing the application block or the developing block of FIG. 1 .
3 is a plan view of the substrate processing apparatus of FIG. 1 .
FIG. 4 is a view showing an example of a hand of the conveying unit of FIG. 3 .
5 is a plan sectional view schematically illustrating an example of the heat treatment chamber of FIG. 3 .
6 is a front cross-sectional view of the heat treatment chamber of FIG. 5 .
7 is a cross-sectional view illustrating a substrate processing apparatus provided in the heating unit of FIG. 6 .
8 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.
9 is a table showing a processing recipe for treating a substrate in a heating step, a hydrophobic treatment step, and a gas supply step of FIG. 8 .
FIG. 10 is a view showing a state of a substrate processing apparatus performing the heating step of FIG. 8 .
FIG. 11 is a view showing a state of a substrate processing apparatus performing the hydrophobization process of FIG. 8 .
12 is a view showing a state of a substrate processing apparatus performing the gas supply step of FIG. 8 .
13 is a diagram illustrating a contact angle between a substrate and a hydrophobization gas when a method for processing a substrate according to an embodiment of the present invention is performed.

Hereinafter, an embodiment of the present invention will be described in more detail with reference to the accompanying drawings. Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more completely explain the present invention to those of ordinary skill in the art. Accordingly, the shapes of elements in the drawings are exaggerated and reduced to emphasize a clearer description.

1 is a perspective view schematically showing a substrate processing apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of the substrate processing apparatus showing the application block or the developing block of FIG. 1 , and FIG. is a plan view of

1 to 3 , the substrate processing apparatus 1 includes an index module 20 , a processing module 30 , and an interface module 40 . According to an embodiment, the index module 20 , the processing module 30 , and the interface module 40 are sequentially arranged in a line. Hereinafter, a direction in which the index module 20 , the processing module 30 , and the interface module 40 are arranged is referred to as an X-axis direction 12 , and a direction perpendicular to the X-axis direction 12 when viewed from the top The Y-axis direction 14 is called, and the direction perpendicular to both the X-axis direction 12 and the Y-axis direction 14 is called the Z-axis direction 16 .

The index module 20 transfers the substrate W from the container 10 in which the substrate W is accommodated to the processing module 30 , and accommodates the processed substrate W in the container 10 . The longitudinal direction of the index module 20 is provided in the Y-axis direction 14 . The index module 20 has a load port 22 and an index frame 24 . With reference to the index frame 24 , the load port 22 is located on the opposite side of the processing module 30 . The container 10 in which the substrates W are accommodated is placed on the load port 22 . A plurality of load ports 22 may be provided, and the plurality of load ports 22 may be disposed along the Y-axis direction 14 .

As the container 10, a closed container 10 such as a Front Open Unified Pod (FOUP) may be used. Vessel 10 may be placed in loadport 22 by an operator or by a transfer means (not shown) such as an Overhead Transfer, Overhead Conveyor, or Automatic GuidedVehicle. have.

An index robot 2200 is provided inside the index frame 24 . A guide rail 2300 having a longitudinal direction in the Y-axis direction 14 is provided in the index frame 24 , and the index robot 2200 may be provided to be movable on the guide rail 2300 . The index robot 2200 includes a hand 2220 on which the substrate W is placed, and the hand 2220 moves forward and backward, rotates about the Z-axis direction 16, and performs the Z-axis direction 16. It may be provided to be movable along with it.

The processing module 30 performs a coating process and a developing process on the substrate W. The processing module 30 has an application block 30a and a developing block 30b. The application block 30a performs a coating process on the substrate W, and the developing block 30b performs a development process on the substrate W. A plurality of application blocks 30a are provided, and they are provided to be stacked on each other. A plurality of developing blocks 30b are provided, and the developing blocks 30b are provided to be stacked on each other. According to the embodiment of Fig. 3, two application blocks 30a are provided, and two development blocks 30b are provided. The application blocks 30a may be disposed below the developing blocks 30b. According to an example, the two application blocks 30a may perform the same process as each other, and may be provided in the same structure. Also, the two developing blocks 30b may perform the same process as each other, and may be provided in the same structure.

Referring to FIG. 3 , the application block 30a includes a heat treatment chamber 3200 , a transfer chamber 3400 , a liquid processing chamber 3600 , and a buffer chamber 3800 . The heat treatment chamber 3200 performs a heat treatment process on the substrate W. The heat treatment process may include a cooling process and a heating process. The liquid processing chamber 3600 supplies a liquid on the substrate W to form a liquid film. The liquid film may be a photoresist film or an antireflection film. The transfer chamber 3400 transfers the substrate W between the heat treatment chamber 3200 and the liquid treatment chamber 3600 in the application block 30a.

The transfer chamber 3400 is provided so that its longitudinal direction is parallel to the X-axis direction 12 . The transfer chamber 3400 is provided with a transfer unit 3420 . The transfer unit 3420 transfers a substrate between the heat treatment chamber 3200 , the liquid processing chamber 3600 , and the buffer chamber 3800 . According to an example, the transfer unit 3420 has a hand A on which the substrate W is placed, and the hand A moves forward and backward, rotates about the Z-axis direction 16 , and the Z-axis direction. It may be provided movably along (16). A guide rail 3300 having a longitudinal direction parallel to the X-axis direction 12 is provided in the transfer chamber 3400 , and the transfer unit 3420 may be provided movably on the guide rail 3300 . .

FIG. 4 is a view showing an example of a hand of the conveying unit of FIG. 3 . Referring to FIG. 4 , the hand A has a base 3428 and a support protrusion 3429 . The base 3428 may have an annular ring shape in which a portion of the circumference is bent. The base 3428 has an inner diameter greater than the diameter of the substrate W. As shown in FIG. A support protrusion 3429 extends from the base 3428 inward thereof. A plurality of support protrusions 3429 are provided, and support an edge region of the substrate W. As shown in FIG. According to an example, four support protrusions 3429 may be provided at equal intervals.

Referring back to FIGS. 2 and 3 , a plurality of heat treatment chambers 3200 are provided. The heat treatment chambers 3200 are arranged in a row along the X-axis direction 12 . The heat treatment chambers 3200 are located at one side of the transfer chamber 3400 .

5 is a plan sectional view schematically illustrating an example of the heat treatment chamber of FIG. 3 , and FIG. 6 is a front cross-sectional view of the heat treatment chamber of FIG. 5 . The heat treatment chamber 3200 includes a housing 3210 , a cooling unit 3220 , a heating unit 5000 , and a conveying plate 3240 .

The housing 3210 is provided in the shape of a substantially rectangular parallelepiped. An inlet (not shown) through which the substrate W enters and exits is formed on the sidewall of the housing 3210 . The inlet may remain open. A door (not shown) may optionally be provided to open and close the inlet. A cooling unit 3220 , a heating unit 5000 , and a conveying plate 3240 are provided in the housing 3210 . The cooling unit 3220 and the heating unit 5000 are provided side by side along the Y-axis direction 14 . According to an example, the cooling unit 3220 may be located closer to the transfer chamber 3400 than the heating unit 5000 .

The cooling unit 3220 has a cooling plate 3222 . The cooling plate 3222 may have a generally circular shape when viewed from the top. The cooling plate 3222 is provided with a cooling member 3224 . According to an example, the cooling member 3224 is formed inside the cooling plate 3222 and may be provided as a flow path through which the cooling fluid flows.

The transport plate 3240 is provided in a substantially circular plate shape and has a diameter corresponding to that of the substrate W. As shown in FIG. A notch 3244 is formed at an edge of the conveying plate 3240 . The notch 3244 may have a shape corresponding to the protrusion 3429 formed on the hand A of the transfer robot 3420 described above. In addition, the notch 3244 is provided in a number corresponding to the protrusions 3429 formed on the hand A, and is formed at positions corresponding to the protrusions 3429 . When the upper and lower positions of the hand A and the transfer plate 3240 are changed in the position where the hand A and the transfer plate 3240 are aligned in the vertical direction, the substrate W between the hand A and the transfer plate 3240 is transmission takes place The conveying plate 3240 is mounted on the guide rail 3249 and is moved along the guide rail 3249 by the actuator 3246 . A plurality of slit-shaped guide grooves 3242 are provided in the carrying plate 3240 . The guide groove 3242 extends from the end of the carrying plate 3240 to the inside of the carrying plate 3240 . The guide grooves 3242 are provided along the Y-axis direction 14 in their longitudinal direction, and the guide grooves 3242 are spaced apart from each other along the X-axis direction 12 . The guide groove 3242 prevents the transfer plate 3240 and the lift pins from interfering with each other when the substrate W is transferred between the transfer plate 3240 and the heating unit 5000 .

The heating unit 5000 provided in some of the heat treatment chambers 3200 may supply a gas while heating the substrate W to improve adhesion of the photoresist to the substrate W. The gas may be a hydrophobizing gas that hydrophobizes the substrate W. According to an example, the gas may be hexamethyldisilane gas. Hereinafter, an apparatus for supplying a gas for improving adhesion of a photoresist to a substrate among the heating units 5000 provided in the heat treatment chamber 3200 will be described as an example.

7 is a cross-sectional view illustrating a substrate processing apparatus provided in the heating unit of FIG. 6 . Referring to FIG. 7 , the substrate processing apparatus provided in the heating unit 5000 includes a process chamber 5100 , a sealing member 5200 , a support unit 5300 , a gas supply unit 5500 , and exhaust units 5760 and 5660 . ), and a controller 5900 .

The process chamber 5100 provides a processing space 5102 therein. The process chamber 5100 may include an upper chamber 5110 , a lower chamber 5120 , and a driver 5115 .

The upper chamber 5110 may be provided in a circular shape when viewed from above. The upper chamber 5110 may be provided in a cylindrical shape with an open lower part. The upper chamber 5110 may be provided in a cylindrical shape with an open lower portion. The lower chamber 5120 may be disposed below the upper chamber 5110 . The lower chamber 5120 may be provided in a circular shape when viewed from the top. The lower chamber 5120 may be provided in a cylindrical shape with an open top. The lower chamber 5120 may be provided in a cylindrical shape with an open top. The upper chamber 5110 and the lower chamber 5120 may be combined with each other to form a processing space 5102 .

The driver 5115 may be coupled to the upper chamber 5110 . The actuator 5115 may move the upper chamber 5110 up and down. The driver 5115 may open the inside of the process chamber 5100 by moving the upper chamber 5110 upward when the substrate W is loaded into the process chambers 5110 and 5120 . The driver 5115 may seal the inside of the process chambers 5110 and 5120 by bringing the upper chamber 5110 into contact with the lower chamber 5120 during the process of processing the substrate W. In this embodiment, the driver 5115 is provided in connection with the upper chamber 5110 as an example, but unlike this, the driver 5115 is connected to the lower chamber 5120 to raise and lower the lower chamber 5120. .

The sealing member 5200 seals the processing space 5102 from the outside. The sealing member 5200 is installed on the contact surface of the upper chamber 5110 and the lower chamber 5120 . For example, the sealing member 5200 may be installed on the contact surface of the lower chamber 5120 .

The support unit 5300 may support the substrate W. The support unit 5300 may include a support plate 5310 , a fin 5320 , and a heating member 5330 .

The support plate 5310 may support the substrate W in the processing space 5102 . A pin 5320 may be provided on the support plate 5310 to support the substrate W. The pins 5320 may be provided to space the lower surface of the substrate W and the upper surface of the support plate 5310 apart from each other. The support plate 5310 may be provided in a circular shape when viewed from above. The upper surface of the support plate 5310 may have a larger cross-sectional area than the substrate W. The support plate 5310 may be made of a material having excellent thermal conductivity. The support plate 5310 may be made of a material having excellent heat resistance. For example, the support plate 5310 may be made of a material including a metal. In addition, the pin 5320 may be a lift pin for elevating the substrate W. The pin 5320 receives the substrate W from the transfer means outside the process chamber 5100 and puts it down on the support unit 5300 , or lifts the substrate W to the transfer means outside the process chamber 5100 . can hand over

Also, the support unit 5300 may include a heating member 5330 that heats the substrate W placed on the support unit 5300 . For example, the heating member 5330 may be located inside the support plate 5310 . For example, the heating member 5330 may serve as a heater. A plurality of heaters may be provided inside the support plate 5310 .

The gas supply unit 5500 may supply a processing gas to the substrate W located in the processing space 5102 . The processing gas may include a gas for adhesion. The adhesion gas may be a hydrophobizing gas that hydrophobizes the substrate W. For example, the processing gas may include hexamethyldisyrein (HMDS). The processing gas may change the properties of the substrate W from hydrophilicity to hydrophobicity. In addition, the process gas may include an inert gas. The inert gas may be a gas containing nitrogen. That is, the gas supply unit 5500 may supply the inert gas to the substrate W together with the hydrophobization gas. Alternatively, the gas supply unit 5500 may supply only the inert gas to the processing space 5102 without the hydrophobization gas.

The gas supply unit 5500 may include a gas supply pipe 5510 and a gas supply line 5530 . The gas supply pipe 5510 may be connected to the central region of the upper chamber 5110 . The gas supply pipe 5510 may supply the processing gas delivered from the gas supply line 5530 to the substrate W. A supply position of the processing gas supplied by the gas supply pipe 5510 may be positioned to face the central upper region of the substrate W. Referring to FIG.

The exhaust units 5610 and 5660 may exhaust the processing space 5102 . The exhaust units 5610 and 5660 may include a lower exhaust part 5610 and an upper exhaust part 5660 .

The lower exhaust unit 5610 may exhaust the processing space 5102 . The lower exhaust unit 5610 may exhaust the processing space 5102 downward. The lower exhaust unit 5610 may include a lower exhaust line 5612 , a lower valve 5613 , and a lower pressure reducing member 5614 . The lower exhaust line 5612 may be connected to the bottom surface of the process chamber 5100 . The lower exhaust line 5612 may be connected to the bottom surface of the lower chamber 5120 . The lower exhaust line 5610 may be branched into a plurality and may be connected to the bottom surface of the lower chamber 5120 . The lower exhaust line 5610 may be connected to the lower chamber 5120 so as to surround the circumference of the support plate 5310 when viewed from above. Each of the plurality of branched lower exhaust lines 5610 may be connected to the lower chamber 5120 so as to surround the circumference of the support plate 5310 . The lower pressure reducing member 5614 may provide reduced pressure to the lower exhaust line 5612 . The lower pressure reducing member 5614 may be a pump. However, the present invention is not limited thereto and the lower pressure-reducing member 5614 may be modified into a known device for providing pressure reduction in the processing space 5102 . The reduced pressure provided to the lower exhaust line 5612 may be transferred to the processing space 5102 . Accordingly, the processing space 5102 may be exhausted. Also, the lower exhaust line 5612 may be provided with a lower valve 5613 . The lower valve 5613 may be an on/off valve or may be provided as a flow control valve.

The upper exhaust unit 5660 may exhaust the processing space 5102 . The upper exhaust unit 5660 may exhaust the processing space 5102 in an upward direction. The lower exhaust portion 5660 may include a center exhaust line 5661 , a center valve 5662 , a center pressure reducing member 5663 , an edge exhaust line 5666 , an edge valve 5667 , and an edge pressure reducing member 5668 . can

The center exhaust line 5661 may be provided in a center region of the process chamber 5100 . The center exhaust line 5661 may exhaust the center region of the processing space 5102 in an upward direction. The center exhaust line 5661 may be connected to the ceiling surface of the process chamber 5100 . The center exhaust line 5661 may be connected to a center region of the ceiling surface of the upper chamber 5110 . The center exhaust line 5661 may be branched into a plurality and may be connected to the ceiling surface of the upper chamber 5120 . The center exhaust line 5661 may be connected to the upper chamber 5110 so as to surround the circumference of the gas supply pipe 5510 when viewed from above. Each of the plurality of branched center exhaust lines 5661 may be connected to the upper chamber 5110 to surround the gas supply pipe 5510 . The center pressure reducing member 5663 may provide a pressure reduction to the center exhaust line 5661 . The center pressure reducing member 5663 may be a pump. However, the present invention is not limited thereto and the center pressure reducing member 5663 may be modified with a known device for providing pressure reduction to the processing space 5102 . The reduced pressure provided to the center exhaust line 5661 may be transferred to the processing space 5102 . Accordingly, the processing space 5102 may be exhausted. Also, the center exhaust line 5661 may be provided with a center valve 5662 . The center valve 5662 may be an on/off valve or may be provided as a flow control valve.

The edge exhaust line 5666 may be provided in an edge region of the process chamber 5100 . The edge exhaust line 5666 may exhaust the edge region of the processing space 5102 in an upward direction. The edge exhaust line 5666 may be connected to the ceiling surface of the process chamber 5100 . The edge exhaust line 5666 may be connected to an edge region of the ceiling surface of the upper chamber 5110 . The edge exhaust line 5666 may be branched into a plurality and may be connected to the ceiling surface of the upper chamber 5120 . The edge exhaust line 5666 may be connected to the upper chamber 5110 so as to surround the circumference of the gas supply pipe 5510 when viewed from above. Also, the edge exhaust line 5666 may be provided outside the center exhaust line 5661 when viewed from above. Each of the plurality of branched edge exhaust lines 5666 may be connected to the upper chamber 5110 . Edge pressure reducing member 5668 can provide reduced pressure to edge exhaust line 5666 . The edge pressure reducing member 5668 may be a pump. However, it is not limited thereto and the edge pressure reducing member 5668 may be modified with a known device for providing pressure reduction to the processing space 5102 . The reduced pressure provided to the edge exhaust line 5666 may be delivered to the processing space 5102 . Accordingly, the processing space 5102 may be exhausted. The edge exhaust line 5666 may also be provided with an edge valve 5667 . The edge valve 5667 may be an on/off valve or may be provided as a flow control valve.

The controller 5900 may control the substrate processing apparatus. The controller 5900 may control a substrate processing apparatus provided to the heating unit 5000 . For example, the controller 5900 may control the support unit 5300 , the gas supply unit 5500 , and the exhaust units 5610 and 5660 . The controller 5900 may control the substrate processing apparatus to perform a substrate processing method described below. For example, the controller 5900 heats the substrate W supported by the support unit 5300 , and then supplies the hydrophobicization gas to the substrate supported by the support unit 5300 , the support unit 5300 and the gas supply unit 5500 . ) can be controlled. Also, the controller 5900 may control the gas supply unit 5500 to supply the inert gas to the processing space 5102 after the hydrophobization gas is supplied to the substrate. In addition, the controller 5900 controls the edge exhaust line 5666 while the support unit 5300 heats the substrate W, the gas supply unit 5500 supplies the hydrophobic gas, and the gas supply unit 5500 supplies the inert gas. ) may control the exhaust units 5610 and 5660 to exhaust the processing space 5102 . Also, the controller 5900 may control the exhaust units 5610 and 5660 such that the center exhaust line 5661 exhausts the processing space 5102 while the gas supply unit 5500 supplies the inert gas.

Hereinafter, a substrate processing method according to an embodiment of the present invention will be described in detail. 8 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention, and FIG. 9 is a table showing a processing recipe for processing a substrate in the heating step, hydrophobicization treatment step, and gas supply step of FIG. 8 , FIG. 10 is a view showing a state of the substrate processing apparatus performing the heating step of FIG. 8 , FIG. 11 is a view showing the appearance of the substrate processing apparatus performing the hydrophobization treatment step of FIG. 8 , and FIG. 12 is the gas supply of FIG. 8 It is a diagram showing the appearance of a substrate processing apparatus performing the steps. 8 to 12 , the substrate processing method according to an embodiment of the present invention may include a heating step S10 , a hydrophobization treatment step S20 , and a gas supply step S30 .

The heating step ( S10 ) may be a step of heating the substrate W . The heating step S10 may be a step of evaporating moisture remaining in the substrate W provided in the processing space 5102 of the process chamber 5100 . In addition, the heating step ( S10 ) may be a step of evaporating moisture in the process chamber 5100 to lower the relative humidity of the processing space 5102 . The heating step ( S10 ) may be performed for a first time ( T1 ). The heating step S10 may be performed while the upper chamber 5110 and the lower chamber 5120 are in close contact with each other. In the heating step ( S10 ), the fins 5320 may be performed in a state in which the gap between the substrate W and the support plate 5310 is narrowed. In addition, in the heating step ( S10 ), the heating member 5330 may generate heat H to heat the substrate W . In addition, in the heating step ( S10 ), the supply of the hydrophobicization gas ( G1 ) and the inert gas ( G2 ) may be stopped. Also, in the heating step S10 , the center exhaust line 5661 may not exhaust the processing space 5102 . Also, in the heating step S10 , an edge exhaust line 5666 may exhaust the processing space 5102 upward (see FIG. 10 ).

The hydrophobization treatment step ( S20 ) may be a step of supplying the hydrophobization gas G1 to the substrate W . The hydrophobization treatment step (S20) may be performed after the heating step (S10). The hydrophobization treatment step S20 may be performed for a second time T2. The second time T2 may be longer than the first time T1 . The hydrophobization treatment step S20 may be performed while the upper chamber 5110 and the lower chamber 5120 are in close contact with each other. The hydrophobization treatment step S20 may be performed in a state in which the pin 5320 narrows the gap between the substrate W and the support plate 5310 . In addition, the supply of the inert gas (G2) may be stopped in the hydrophobization treatment step (S20). Also, in the hydrophobization treatment step S20 , the center exhaust line 5661 may exhaust the treatment space 5102 upward. Also, in the hydrophobization treatment step S20 , an edge exhaust line 5666 may exhaust the treatment space 5102 upward. In addition, in the hydrophobic treatment step S20 , the lower exhaust line 5612 may exhaust the treatment space 5102 downward (refer to FIG. 11 ).

The gas supply step S30 may be a step of supplying the inert gas G2 to the substrate W and/or the processing space 5102 . The gas supply step (S30) may be performed after the heating step (S10) and the hydrophobization treatment step (S30). The gas supply step S30 may be performed for a third time T3. The third time T3 may be longer than the first time T1 . Also, the third time period T3 may be shorter than the second time period T2 . The gas supply step ( S30 ) may be performed while the upper chamber 5110 and the lower chamber 5120 are in close contact with each other. The gas supply step S30 may be performed in a state in which the fin 5320 narrows the gap between the substrate W and the support plate 5310 . In addition, in the gas supply step ( S30 ), the supply of the hydrophobization gas G1 may be stopped. Also, in the gas supply step S30 , the center exhaust line 5661 may not exhaust the processing space 5102 . Also, in the gas supply step S30 , an edge exhaust line 5666 may exhaust the processing space 5102 upward. Also, in the hydrophobic treatment step S20 , a lower exhaust line 5612 may exhaust the treatment space 5102 downward (see FIG. 12 ).

13 is a diagram illustrating a contact angle between a substrate and a hydrophobic gas when performing a substrate processing method according to an embodiment of the present invention. In general, when the hydrophobization gas is supplied to the substrate W, the moisture layer remaining on the substrate W increases the contact angle between the substrate W and the hydrophobization gas. This is because the moisture layer remaining on the substrate W acts as a catalyst, and similarly, the contact angle between the substrate W and the hydrophobization gas is affected by the relative humidity in the processing space 5102 of the process chamber 5100 . . As the relative humidity in the processing space 5102 increases, the contact angle increases. That is, the moisture remaining in the substrate W and moisture in the processing space 5102 may not properly adjust the contact angle between the substrate W and the hydrophobizing gas. For example, as shown in FIG. 13 , when the hydrophobization treatment step S20 is directly performed without the heating step S10 , a contact angle A1 larger than the target contact angle TA is formed. In this case, when the photoresist application process is performed after the hydrophobicization step S20 , the photoresist solution supplied to the substrate W is pushed in one direction, and a pushing phenomenon occurs. However, according to an embodiment of the present invention, the heating step (S10) is performed in advance with respect to the hydrophobic treatment step (S20). In the heating step S10 , the substrate W is heated to evaporate the moisture layer formed on the substrate W, and further, the relative humidity in the processing space 5102 is lowered. Accordingly, it is possible to suppress the moisture layer and/or moisture from acting as a catalyst in the hydrophobization treatment step (S20). That is, by performing the heating step S10 in advance with respect to the hydrophobization treatment step S20 , the contact angle between the substrate W and the hydrophobicization gas can be properly maintained at the target contact angle TA.

In addition, in the heating step S10 , the edge exhaust line 5666 exhausts the processing space 5102 upward from the edge region of the process chamber 5100 . When the moisture layer is evaporated in the heating step ( S10 ), it is diffused upward. The edge exhaust line 5666 exhausts the processing space 5102 in the upward direction so that moisture can be efficiently exhausted.

In addition, in the hydrophobization treatment step S20 , the lower exhaust line 5612 exhausts the treatment space 5102 downward. A lower exhaust line 5612 exhausts the processing space 5102 in a downward direction to allow the hydrophobicization gas to flow downward. Accordingly, the hydrophobicization gas is efficiently supplied to the substrate W.

In addition, in the hydrophobization treatment step S20 , the center exhaust line 5661 and the edge exhaust line 5666 exhaust the processing space 5102 upward. In the process of performing the hydrophobization treatment step (S20), organic substances such as ammonia may be generated. The organic material such as ammonia is lighter than air and diffuses upward. The center exhaust line 5661 and the edge exhaust line 5666 exhaust the processing space 5102 in the upward direction to efficiently exhaust the organic material.

In addition, in the gas supply step S30 , the lower exhaust line 5612 and the edge exhaust line 5666 exhaust the processing space 5102 in the downward and upward directions, respectively. That is, in the gas supply step S30 , the processing space 5102 is exhausted from the edge region of the process chamber 5100 . By evacuating the processing space 5102 in the edge region of the process chamber 5100 in the gas supply step S30 , re-adhesion of ammonia remaining in the processing space 5102 to the substrate W may be minimized.

Referring back to FIGS. 2 and 3 , a plurality of buffer chambers 3800 are provided. Some of the buffer chambers 3800 are disposed between the index module 20 and the transfer chamber 3400 . Hereinafter, these buffer chambers are referred to as a front buffer 3802 (front buffer). The front-end buffers 3802 are provided in plurality, and are positioned to be stacked on each other in the vertical direction. Another portion of the buffer chambers 3802 and 3804 is disposed between the transfer chamber 3400 and the interface module 40 below. These buffer chambers are referred to as rear buffer 3804 (rear buffer). The rear end buffers 3804 are provided in plurality, and are positioned to be stacked on each other in the vertical direction. Each of the front-end buffers 3802 and the back-end buffers 3804 temporarily stores a plurality of substrates W. As shown in FIG. The substrate W stored in the shear buffer 3802 is loaded or unloaded by the index robot 2200 and the transfer robot 3420 . The substrate W stored in the downstream buffer 3804 is carried in or carried out by the transfer robot 3420 and the first robot 4602 .

The developing block 30b has a heat treatment chamber 3200 , a transfer chamber 3400 , and a liquid treatment chamber 3600 . The heat treatment chamber 3200 , the transfer chamber 3400 , and the liquid treatment chamber 3600 of the developing block 30b are the heat treatment chamber 3200 , the transfer chamber 3400 , and the liquid treatment chamber 3600 of the application block 30a . ) and is provided in a structure and arrangement substantially similar to those of the above, a description thereof will be omitted. However, in the developing block 30b, all of the liquid processing chambers 3600 are provided as the developing chamber 3600 for processing the substrate by supplying a developer in the same manner.

The interface module 40 connects the processing module 30 to the external exposure apparatus 50 . The interface module 40 includes an interface frame 4100 , an additional process chamber 4200 , an interface buffer 4400 , and a transfer member 4600 .

A fan filter unit for forming a descending airflow therein may be provided at an upper end of the interface frame 4100 . The additional process chamber 4200 , the interface buffer 4400 , and the transfer member 4600 are disposed inside the interface frame 4100 . The additional process chamber 4200 may perform a predetermined additional process before the substrate W, which has been processed in the application block 30a, is loaded into the exposure apparatus 50 . Optionally, the additional process chamber 4200 may perform a predetermined additional process before the substrate W, which has been processed in the exposure apparatus 50 , is loaded into the developing block 30b. According to an example, the additional process is an edge exposure process of exposing an edge region of the substrate W, a top surface cleaning process of cleaning the upper surface of the substrate W, or a lower surface cleaning process of cleaning the lower surface of the substrate W can A plurality of additional process chambers 4200 may be provided, and they may be provided to be stacked on each other. All of the additional process chambers 4200 may be provided to perform the same process. Optionally, some of the additional process chambers 4200 may be provided to perform different processes.

The interface buffer 4400 provides a space in which the substrate W transferred between the application block 30a, the additional process chamber 4200, the exposure apparatus 50, and the developing block 30b temporarily stays during the transfer. A plurality of interface buffers 4400 may be provided, and a plurality of interface buffers 4400 may be provided to be stacked on each other.

According to an example, the additional process chamber 4200 may be disposed on one side of the transfer chamber 3400 along the lengthwise extension line, and the interface buffer 4400 may be disposed on the other side thereof.

The transfer member 4600 transfers the substrate W between the coating block 30a, the addition process chamber 4200, the exposure apparatus 50, and the developing block 30b. The transfer member 4600 may be provided as one or a plurality of robots. According to an example, the conveying member 4600 has a first robot 4602 and a second robot 4606 . The first robot 4602 transfers the substrate W between the application block 30a, the additional process chamber 4200, and the interface buffer 4400, and the interface robot 4606 uses the interface buffer 4400 and the exposure apparatus ( 50), and the second robot 4604 may be provided to transfer the substrate W between the interface buffer 4400 and the developing block 30b.

The first robot 4602 and the second robot 4606 each include a hand on which a substrate W is placed, and the hand moves forward and backward, rotates about an axis parallel to the Z-axis direction 16, and Z It may be provided to be movable along the axial direction 16 .

The above detailed description is illustrative of the present invention. In addition, the above description shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the concept of the invention disclosed herein, the scope equivalent to the written disclosure, and/or within the scope of skill or knowledge in the art. The written embodiment describes the best state for implementing the technical idea of the present invention, and various changes required in the specific application field and use of the present invention are possible. Accordingly, the detailed description of the present invention is not intended to limit the present invention to the disclosed embodiments. Also, the appended claims should be construed as including other embodiments.

Process Chamber: 5100
Upper chamber: 5110
Lower chamber: 5120
Sealing member: 5200
Support unit: 5300
Support plate: 5310
Pin: 5320
Heating element: 5330
Gas supply unit: 5500
Exhaust unit: 5610, 5660
Lower exhaust: 5610
Bottom exhaust line: 5612
Bottom valve: 5613
Lower pressure reducing member: 5614
Upper exhaust: 5660
Center exhaust line: 5661
Center valve: 5662
Center decompression member: 5663
Edge exhaust line: 5666
Edge valve: 5667
Edge decompression member: 5668
Controller: 5900

Claims (10)

A method of processing a substrate, comprising:
a heating step of heating the substrate to evaporate moisture remaining on the substrate provided in the processing space of the process chamber;
Including a hydrophobization treatment step of supplying a hydrophobization gas to the substrate after the heating step,
In the heating step,
and evacuating the processing space in an upward direction in an edge region of the process chamber. According to claim 1,
and a gas supply step of supplying an inert gas to the processing space after the hydrophobization treatment step. 3. The method of claim 2,
In the hydrophobization treatment step, and the gas supply step,
and evacuating the processing space in an upward direction in an edge region of the process chamber. 3. The method of claim 2,
In the hydrophobization treatment step,
and evacuating the processing space in an upward direction from a center region of the process chamber. An apparatus for processing a substrate, comprising:
a process chamber having a processing space therein;
a support unit supporting a substrate in the processing space and heating the supported substrate;
a gas supply unit supplying a hydrophobization gas or an inert gas to the processing space;
an exhaust unit for exhausting the processing space;
a controller;
The exhaust unit is
an upper exhaust for exhausting the processing space in an upward direction;
The upper exhaust part,
an edge exhaust line provided in an edge region of the process chamber;
a center exhaust line provided in a center region of the process chamber;
The controller is
heating the substrate supported by the support unit;
then controlling the support unit and the gas supply unit to supply the hydrophobization gas to the substrate supported by the support unit,
and controlling the exhaust unit such that the edge exhaust line exhausts the processing space while the support unit heats the substrate. 6. The method of claim 5,
The controller is
and controlling the gas supply unit to supply the inert gas to the processing space after the hydrophobization gas is supplied. 6. The method of claim 5,
The exhaust unit is
The substrate processing apparatus further comprising a lower exhaust for exhausting the processing space in a downward direction. delete 8. The method of claim 7,
The controller is
and controlling the exhaust unit such that the edge exhaust line exhausts the processing space while the gas supply unit supplies the hydrophobization gas or the gas supply unit supplies the inert gas. 8. The method of claim 7,
The controller is
and controlling the exhaust unit such that the center exhaust line exhausts the processing space while the gas supply unit supplies the hydrophobized gas.

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