KR102273653B1 - Light emitting diode package - Google Patents

Abstract

The present invention relates to a light emitting diode package including a phosphor. A light emitting diode package according to the present invention includes a first light emitting diode chip emitting light having a first peak wavelength; a second light emitting diode chip emitting light having a second peak wavelength; a first phosphor excited by at least one of the first light emitting diode chip and the second light emitting diode chip to emit green light; and a second phosphor excited by at least one of the first light emitting diode chip and the second light emitting diode chip to emit red light, wherein the first light emitting diode chip, the second light emitting diode chip, the first phosphor and White light is formed by the synthesis of light emitted from the second phosphor, the second phosphor is a phosphor having _{a chemical formula of A 2} MF ₆ :Mn ⁴⁺ , and A is among Li, Na, K, Rb, Ce and NH ₄ . one, and M is one of Si, Ti, Nb, and Ta, but the difference between the first peak wavelength and the second peak wavelength is 7 nm or less.

Description

Light Emitting Diode Package {LIGHT EMITTING DIODE PACKAGE}

The present invention relates to a light emitting diode package. More particularly, the present invention relates to a light emitting diode package including a phosphor.

A light emitting diode (LED) package is a compound semiconductor having a p-n junction structure of a semiconductor and refers to a device that emits predetermined light by recombination of minority carriers (electrons or holes). The light emitting diode package consumes less power, has a long lifespan, and can be miniaturized.

The light emitting diode package may implement white light using a phosphor, which is a wavelength conversion means. That is, by disposing the phosphor on the light emitting diode chip, white light can be realized by mixing a part of the primary light of the light emitting diode chip and the secondary light wavelength-converted by the phosphor. A white light emitting diode package having such a structure is widely used because of its low price and simple principle and structure.

Specifically, white light may be obtained by applying a phosphor emitting yellow green or yellow by absorbing a portion of blue light as excitation light on a blue light emitting diode chip. Referring to Korean Patent Laid-Open No. 10-2004-0032456, a phosphor that emits yellow-green to yellow light is attached to a light-emitting diode chip that emits blue light as an excitation source, and blue light emission of the light-emitting diode and yellow-green to yellow light emission of the phosphor Disclosed is a light emitting diode that emits white light in accordance with the present invention.

However, since the white light emitting diode package using this method utilizes the light emission of the yellow phosphor, it is difficult to realize high color reproducibility due to the lack of spectrum in the green and red regions of the emitted light. In particular, when used as a backlight unit, it is difficult to implement a color close to a natural color due to low color purity after passing through a color filter.

In order to solve this problem, a light emitting diode is manufactured using a blue light emitting diode chip and green and red phosphors using blue light as excitation light. That is, white light having high color rendering can be realized through a mixture of blue light and green light and red light excited by blue light. When such a white light emitting diode is used as the backlight unit, since the degree of matching with the color filter is very high, an image closer to a natural color may be realized. However, light emitted through excitation of the phosphor has a wide full width at half maximum, compared with a light emitting diode chip. Also, referring to Korean Patent Registration No. 10-0961324, a nitride phosphor, a method for manufacturing the same, and a light emitting device are disclosed. Examining the emission spectrum of the light emitting device including the nitride phosphor, it can be seen that it has a wide half maximum width in the red region. Therefore, even in this case, it is difficult to realize high color reproducibility.

Accordingly, in order to realize white light having higher color reproducibility, it is necessary to use a phosphor having a narrower half maximum width. However, phosphors having a narrow full width at half maximum generally show a property vulnerable to moisture, which has a problem of lowering the overall reliability of the light emitting diode package. Recently, a fluoride-based phosphor is used as a phosphor emitting red light having a narrow half maximum width. However, as described above, the fluoride-based phosphor is not only vulnerable to moisture, but also has poor thermal stability, so that the reliability of the phosphor is a problem. In order for a light emitting diode package including a phosphor to be applied to various products, high reliability must be ensured.

In addition, the light emitting diode package is required to secure color reproducibility and to improve the amount of light. However, it is difficult to simultaneously satisfy the light quantity and color reproducibility of the light emitting diode package. This is because, in general, when the amount of light of the light emitting diode package increases, heat generated from the light emitting diode package also increases, and the reliability of the phosphor may deteriorate due to the heat.

Accordingly, it is required to develop a high-intensity light emitting diode package including a phosphor capable of ensuring color reproducibility and reliability by emitting light having a narrow full width at half maximum.

Republic of Korea Patent Publication No. 10-2004-0032456 Republic of Korea Patent Registration No. 10-0961324

SUMMARY OF THE INVENTION An object of the present invention is to provide a light emitting diode package with improved reliability by solving a problem of deterioration of a phosphor in a high temperature and/or high humidity environment.

Another object to be solved by the present invention is to provide a light emitting diode package with improved color reproducibility, including a phosphor for emitting light having a narrow half maximum width.

Another problem to be solved by the present invention is to provide a high light intensity light emitting diode package with improved heat dissipation capability.

A light emitting diode package according to an embodiment of the present invention includes a first light emitting diode chip emitting light having a first peak wavelength; a second light emitting diode chip emitting light having a second peak wavelength; a first phosphor excited by at least one of the first light emitting diode chip and the second light emitting diode chip to emit green light; and a second phosphor excited by at least one of the first light emitting diode chip and the second light emitting diode chip to emit red light, wherein the first light emitting diode chip, the second light emitting diode chip, White light is formed by synthesizing light emitted from the first phosphor and the second phosphor, and the second phosphor is a phosphor having _{a chemical formula of A 2} MF ₆ :Mn ⁴⁺ , wherein A is Li, Na, K, One of Rb, Ce, and NH ₄ , wherein M is one of Si, Ti, Nb and Ta, and a difference between the first peak wavelength and the second peak wavelength may be 7 nm or less.

The first light emitting diode chip and the second light emitting diode chip may further include a housing including a mounting area, wherein the first light emitting diode chip and the second light emitting diode chip are disposed in the mounting area through a paste member. can be mounted on

Meanwhile, the paste member may have a thermal conductivity A represented by Equation 1 below.

[Equation 1]

In Equation 1, A is the thermal conductivity, W (Watt) is the power consumption of any one of the first light emitting diode chip and the second light emitting diode chip, m is the unit thickness, k (kelvin) is It is the unit temperature difference (Δt).

In addition, the paste member may include at least one of a metal such as gold, aluminum, and silver, and a nano-conductive material such as graphene and carbon nanotubes as a thermally conductive material.

Further, the white light may have x and y color coordinates that form points within a region on the CIE chromaticity diagram, the x color coordinate being 0.25 to 0.33, and the y color coordinate being 0.22 to 0.35.

In some embodiments, the first phosphor is a BAM (Ba-Al-Mg)-based phosphor, a quantum dot phosphor, a silicate-based phosphor, a beta-SiAlON-based phosphor, or a garnet ( Garnet)-based phosphors and LSN-based phosphors.

A peak wavelength of green light of the first phosphor may be located in a range of 500 to 570 nm, and a peak wavelength of red light of the second phosphor may be located in a range of 610 to 650 nm.

The first light emitting diode chip and/or the second light emitting diode chip may be a blue light emitting diode chip or an ultraviolet light emitting diode chip.

The white light may have a national television system committee (NTSC) color saturation of 83% or more.

The red light emitted by the second phosphor may have a full width at half maximum (FWMH) of 20 nm or less.

A molding part covering the first light emitting diode chip and the second light emitting diode chip may be further included, wherein the molding part may include at least one of silicon, epoxy, PMMA, PE, and PS.

Meanwhile, the first and second phosphors may be distributed in the molding part.

Further, the method may further include a buffer part disposed between the molding part and at least one of the first and second light emitting diode packages, wherein the buffer part may have a lower hardness than the molding part.

Furthermore, the molding part may include: a first molding part covering the first and second light emitting diode packages; and a second molding part covering the first molding part, wherein the first molding part may contain the second phosphor, and the second molding part may contain the first phosphor.

It may further include a phosphor plate disposed on the molding part, wherein the phosphor plate may contain the first and second phosphors.

In addition, the housing may include a reflector that reflects the light emitted from the at least one light emitting diode chip.

The housing may further include a barrier reflector covering the reflector.

In addition, it further includes at least one third light emitting diode chip, wherein the at least one third light emitting diode chip is an ultraviolet light emitting diode package or a blue light emitting diode package, and the at least one third light emitting diode chip is the first light emitting diode package. The diode chip and the second light emitting diode chip may have different peak wavelengths.

Since the light emitting diode package according to the present invention includes a phosphor emitting light having a narrow full width at half maximum, color reproducibility of the light emitting diode package can be improved. In addition, it is possible to prevent deterioration of the phosphor in a high-temperature and/or high-humidity environment, such as deterioration of light emitting characteristics, thereby improving the reliability of the phosphor, thereby improving the overall reliability of the light emitting diode package. In addition, since the light emitting diode package according to the present invention improves the amount of light and heat dissipation ability, it is possible to prevent deterioration of the phosphor, thereby securing the reliability of the light emitting diode package.

1 is a cross-sectional view illustrating a light emitting diode package according to an embodiment of the present invention.
2 is a cross-sectional view illustrating a light emitting diode package according to another embodiment of the present invention.
3 is a cross-sectional view illustrating a light emitting diode package according to another embodiment of the present invention.
4 is a cross-sectional view illustrating a light emitting diode package according to another embodiment of the present invention.
5 is a cross-sectional view illustrating a light emitting diode package according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments introduced below are provided as examples so that the spirit of the present invention can be sufficiently conveyed to those skilled in the art to which the present invention pertains. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. And, in the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience. In addition, when one component is described as being “on” or “on” another component, each component is different from each component, as well as when each component is “immediately above” or “directly on” the other component. It includes cases where there is another component in between. Like reference numerals refer to like elements throughout.

1 is a cross-sectional view illustrating a light emitting diode package according to an embodiment of the present invention. Referring to FIG. 1 , the light emitting diode package includes a housing 101 , a first light emitting diode chip 102 , a second light emitting diode chip 103 , a molding part 104 , a first phosphor 105 , and a second phosphor ( 106 ) and a face boot member 107 .

A first light emitting diode chip 102 , a second light emitting diode chip 103 , a molding part 104 , a first phosphor 105 , a second phosphor 106 , and a paste member 107 are disposed on the housing 101 . can be placed. Lead terminals (not shown) for inputting power to the light emitting diode chip 102 may be installed in the housing 101 . The housing 101 may include a mounting area for mounting the first and second light emitting diode chips 102 and 103 on the lead terminals. The first light emitting diode chip 102 and the second light emitting diode chip 103 may be mounted on the mounting region using the paste member 107 . The molding part 104 may include the first and second phosphors 105 and 106 and cover the first and second light emitting diode chips 102 and 103 .

The housing 101 is made of general plastic (polymer), ABS (acrylonitrile butadiene styrene), LCP (liquid crystalline polymer), PA (polyamide), IPS (polyphenylene sulfide) or TPE (thermoplastic elastomer), or the like, or made of metal or ceramic. may be formed. When the first light emitting diode chip 102 or the second light emitting diode chip 103 is an ultraviolet light emitting diode chip, the housing 101 may be formed of ceramic. When the housing 101 is made of ceramic, there is no fear of discoloration or deterioration of the housing 101 including the ceramic due to the ultraviolet light emitted from the ultraviolet light emitting diode chip, thereby maintaining the reliability of the light emitting diode package. When the housing 101 is made of metal, the housing 101 may include two or more metal frames, and the metal frames may be insulated from each other. Through the housing 101 including the metal, the heat dissipation capability of the light emitting diode package may be improved. Although materials capable of forming the housing 101 have been described above, the housing 101 is not limited thereto and may be formed of various materials.

The housing 101 may include an inclined inner wall to reflect light emitted from the first and second light emitting diode chips 102 and 103 .

The molding part 104 may be formed of a material including at least one of silicon, epoxy, polymethyl methacrylate (PMMA), polyethylene (PE), and polystyrene (PS). The molding part 104 may be formed of a material having a certain hardness, if necessary, and is not limited to the above-described material.

The molding part 104 may be formed through an injection process using a mixture of the above-described material and the first and second phosphors 105 and 106 . In addition, the molding part 104 may be formed by using a separate mold and then pressurizing or heat-treating it. The molding part 104 may be formed in various shapes, such as a convex lens shape, a flat plate shape (not shown), and a shape having predetermined irregularities on the surface. Although the light emitting diode package according to the present invention discloses the molding part 104 having a convex lens shape, the shape of the molding part 104 is not limited thereto.

The first light emitting diode chip 102 and/or the second light emitting diode chip 103 may be an ultraviolet light emitting diode chip or a blue light emitting diode chip. When the light emitting diode chips 102 and 103 are blue light emitting diode chips, the peak wavelength of the emitted light may be in the range of 410 to 490 nm. A full width at half maximum (FWHM) of a peak wavelength of light emitted by the light emitting diode chips 102 and 103 may be less than or equal to 40 nm.

In addition, the peak wavelength of light emitted by each of the first light emitting diode chip 102 and the second light emitting diode chip 103 may be different from each other. The difference between the peak wavelengths of light emitted by each of the first light emitting diode chip 102 and the second light emitting diode chip 103 may be greater than 0 and less than or equal to 7 nm. In the present invention, since the light emitting diode package includes the first and second light emitting diode chips 102 and 103 having different peak wavelengths, the amount of light can be improved. Specific effects thereof will be described later.

In this embodiment, although the light emitting diode package is illustrated as including two light emitting diode chips 102 and 103, it is not limited thereto. Accordingly, at least one third light emitting diode chip emitting light having a peak wavelength different from that of the first and second light emitting diode chips 102 and 103 may be included.

The first phosphor 105 may be excited by the first and/or second light emitting diode chips 102 and 103 to emit green light. The second phosphor 106 may be excited by the first and/or second light emitting diode chips 102 and 103 to emit red light.

A peak wavelength of green light emitted by the first phosphor 105 may be within a range of 500 to 570 nm. The first phosphor 105 may emit green light having a full width at half maximum of 60 nm or less. The first phosphor 105 is a BAM (Ba-Al-Mg)-based phosphor, a quantum dot phosphor, a silicate-based phosphor, a beta-SiAlON-based phosphor, a Garnet-based phosphor, and an LSN. At least one phosphor selected from series and fluoride-based phosphors may be included. The fluoride-based phosphor may be a phosphor having a chemical formula of _{A 2} MF ₆ :Mn ^{4+ .} In the above formula, A may be one of Li, Na, K, Rb, Ce, and NH ₄ , and M may be one of Si, Ti, Nb, and Ta.

Although the type of the first phosphor 105 has been described above, the type of the first phosphor 105 according to the present invention is not limited thereto.

As the half width of green light is narrower, green light having high color purity may be realized. When the half width is 60 nm or more, since the color purity of the emitted light is relatively low, 80% or more of the total color reproduction range specified by the standard of the NTSC (National Television System Committee) system used as a color television broadcasting system is reproduced. hard to do Therefore, in order to realize NTSC color saturation of 80% or more of white light emitted by the light emitting device according to the present invention, the first phosphor emits green light having a full width at half maximum of 60 nm or less.

The second phosphor 106 may be excited by the light emitting diode chip 102 to emit red light. The peak wavelength of the red light emitted by the second phosphor 106 may be within a range of 610 to 650 nm. The second phosphor 106 may include at least one phosphor selected from a quantum dot phosphor, a sulfide-based phosphor, and a fluoride-based phosphor. The fluoride-based phosphor may be a phosphor having a chemical formula _{of A 2} MF ₆ :Mn ^{4+ .} In the above formula, A may be one of Li, Na, K, Rb, Ce, and NH ₄ , and M may be one of Si, Nb, Ti, and Ta.

The second phosphor 106 may emit red light having a narrow full width at half maximum. Specifically, the quantum dot phosphor may emit red light having a half width of 30 to 40 nm, in the case of a sulfide-based phosphor, a half width of 65 nm or less, and in the case of a fluoride-based phosphor, red light having a half width of 20 nm or less. That is, when the second phosphor 106 is a fluoride-based phosphor, red light having the narrowest half maximum width may be emitted. Since the light emitting diode package according to the present invention emits red light having a narrow full width at half maximum, color reproducibility is improved.

The following experiment was performed to confirm the effect of increasing the amount of light of the light emitting diode package according to the present invention.

Using the first and second light emitting diode chips 102 and 103 and the first and second phosphors 105 and 106 according to the present invention, the first light emitting diode chip 102 and the second light emitting diode chip 103 are used. The change in the amount of light and the change in NTSC according to the difference in the peak wavelength between the two groups were measured. The first light emitting diode chip 102 emits light having a peak wavelength of 440 nm, and the first phosphor 105 uses a beta-SiAlON-based phosphor, and the beta-sialon (Beta-) SiAlON)-based phosphors may be represented by a β-SiAlON:Eu ^{2+ chemical formula.} The second phosphor 106 is a fluoride-based phosphor, and the fluoride-based phosphor has a chemical formula of _{K 2} SiF ₆ :Mn ^{4+ .}

First, for comparison, the amount of light and NTSC of the light emitting diode package when only the first light emitting diode chip 102 emits excitation light under the above conditions were measured. As a result of the measurement, it was possible to measure that the amount of light was 12.12mcd and that the NTSC was 85.3%.

Next, in order to confirm the effect of the light emitting diode package according to the present invention, under the same conditions as above, the peak wavelength of the second light emitting diode chip 103 is 442 nm of the first light emitting diode package and the second light emitting diode chip 103 . a second light emitting diode package having a peak wavelength of 445 nm, a third light emitting diode package having a peak wavelength of the second light emitting diode chip 103 of 447 nm, and a fourth light emitting diode having a peak wavelength of the second light emitting diode chip 103 of 450 nm A package was prepared and the amount of light and NTSC were measured.

As a result of the measurement, the light quantity of the first light emitting diode package is 12.25 mcd, NTS is 84.7%, the light quantity of the second light emitting diode package is 12.34 mcd, NTS is 84.3%, and the light quantity of the third light emitting diode package is 12.44 mcd, NTS is 83.7%, the light amount of the fourth light emitting diode package was 12.59mcd, and the NTS was 82.9%.

As a result of the experiment, it can be seen that the first, second and third light emitting diode packages, which are light emitting diode packages according to the present invention, compared with the comparative light emitting diode package, the amount of light increased by about 3.9%, and the NTSC decreased by about 1.87. there was.

That is, the light emitting diode package according to the present invention in which the difference between the peak wavelengths of the light emitted by the first light emitting diode chip 102 and the second light emitting diode chip 103 is 7 nm or less is less than 2% compared to the conventional light emitting diode package. Although the color reproducibility fell, it was found that the amount of light increased by close to 4%. That is, the light emitting diode package according to the present invention was able to secure a high amount of light while securing color reproducibility of a certain level or more, compared to the light emitting diode package according to the prior art.

Next, in the light emitting diode package according to an embodiment of the present invention, the first and second light emitting diode chips 102 and 103 are mounted in a mounting area within the housing 101 through the paste member 107 . In the paste member 107 , a resin part and a filler including a thermally conductive material may be mixed. The resin part includes an epoxy or silicone material. The filler includes a thermally conductive material and may include metal and ceramic components. The metal may be at least one of Ag, Au, Al, and Cu, and the ceramic may include at least one of Si, Al, Mg, Ba, Ti, and Zr. In addition, the filler may include a nano-conductive material such as graphene or carbon nanotubes.

In the present invention, the paste member 107 has a thermal conductivity A satisfying Equation 1 below.

[Equation 1]

In Equation 1, A is the thermal conductivity, W (Watt) is the power consumption of any one of the first light emitting diode chip 102 and the second light emitting diode chip 103, m is the unit thickness , k (kelvin) means the unit temperature difference (Δt).

That is, the paste member 107 has a thermal conductivity twice or more than the thermal conductivity expressed by dividing the power consumption of the light emitting diode chips 102 and 103 on which they are disposed by the difference between the unit thickness and the unit temperature. In the present invention, since the paste member 107 has such thermal conductivity, the heat dissipation effect can be improved even in the case of a light emitting diode package including a multi-chip. Through this, the reliability of the light emitting diode package is improved.

In order to confirm the reliability of the light emitting diode package according to the present invention, a reliability test was performed by changing the CIE color coordinates.

The power consumption of the light emitting diode chip is 0.9 W, the thermal conductivity of the paste member is 0.6 W/m*k, the power consumption of the first light emitting diode package and the light emitting diode chip is 1.2 W, and the thermal conductivity of the paste member is 2.4 W/m* A second light emitting diode package of k was prepared. Using the first and second light emitting diode packages, an input current of 300 mA, a temperature of 60 ° C, and other conditions such as size were all the same. A 500 hour reliability test was performed on the change of CIE color coordinates. .

As a result of the experiment, the first light emitting diode package showed a change of -0.0041 in the x color coordinate and -0.0014 in the y color coordinate. The second light emitting diode package according to the present invention exhibited a change of -0.0004 in the x color coordinate and +0.0040 in the y color coordinate.

In addition, a 500-hour reliability test was performed on the change of CIE color coordinates at an input current of 300 mA and a temperature of 85°C.

As a result of the experiment, the first light emitting diode package showed a change of -0.0060 in the x color coordinate and -0.0030 in the y color coordinate. The second light emitting diode package according to the present invention exhibited a change of -0.0034 in the x color coordinate and +0.0025 in the y color coordinate.

In addition, a 500-hour reliability test was performed on the CIE color coordinate change in a state where the input current was 300 mA, the temperature was 60° C., and the relative humidity was 90%.

As a result of the experiment, the first light emitting diode package showed a change of -0.0060 in the x color coordinate and -0.0023 in the y color coordinate. The second light emitting diode package according to the present invention showed a change of -0.0022 in the x color coordinate and +0.0032 in the y color coordinate.

As such, it was confirmed that the second light emitting diode package, which is the light emitting diode package according to the present invention, showed little change in color coordinates even when used for a long time compared to the light emitting diode package according to the prior art even in a high temperature and/or high humidity environment. That is, since the light emitting diode package according to the present invention has excellent heat dissipation effect through the paste member 107 , it is possible to prevent deterioration in reliability of the light emitting diode package due to heat.

As described above, since the light emitting diode package according to an embodiment of the present invention includes a phosphor emitting red light having a half width of 20 nm or less, it has high color reproducibility. In addition, by using two light emitting diode chips showing a difference in peak wavelength within a certain range, the amount of light can be improved, and since it includes a paste member having thermal conductivity proportional to the power consumption of the light emitting diode chip, the heat dissipation effect is improved. can be improved Accordingly, it is possible to realize a high-light-intensity light emitting diode package having improved color reproducibility and thermal conductivity.

2 is a cross-sectional view illustrating a light emitting diode package according to another embodiment of the present invention. Referring to FIG. 2 , the light emitting diode package includes a housing 101 , a first light emitting diode chip 102 , a second light emitting diode chip 103 , a molding part 104 , a first phosphor 105 , and a second phosphor ( 106 ), a paste member 107 , and a buffer unit 109 . The light emitting diode package according to the present embodiment is substantially similar to the light emitting diode package according to the above embodiment except for the buffer unit 109 , and thus overlapping description will be omitted.

The buffer unit 109 may be disposed between the first light emitting diode chip 102 and the molding unit 104 . The buffer unit may be formed of a material including at least one of silicone, epoxy, polymethyl methacrylate (PMMA), polyethylene (PE), and polystyrene (PS). The hardness of the buffer part 109 may be smaller than that of the molding part 104 . By using the buffer unit 109 , it is possible to prevent thermal stress of the molding unit 104 due to heat generated by the first light emitting diode chip 102 . Although the buffer unit 109 according to the present embodiment has been described as being disposed in the area around the first light emitting diode chip 102, the buffer unit 109 may also be disposed in the area of the second light emitting diode chip 103, Furthermore, it may be disposed in a wide area so as to be in contact with both the left and right walls of the housing 101 .

3 is a cross-sectional view illustrating a light emitting diode package according to another embodiment of the present invention. Referring to FIG. 3 , the light emitting diode package includes a housing 101 , a first light emitting diode chip 102 , a second light emitting diode chip 103 , a molding part 104 , a first phosphor 105 , and a second phosphor ( 106 ), a paste member 107 , a reflector 111 , and a barrier reflector 112 . The light emitting diode package according to the present embodiment is substantially similar to the light emitting diode package according to the above embodiment except for the reflector 111 and the barrier reflector 112 , and thus overlapping description will be omitted.

The reflector 111 may be spaced apart from the first and second light emitting diode chips 102 and 103 and disposed on the side thereof. The reflector 111 may maximize reflection of light emitted from the first and second light emitting diode chips 102 and 103 and the first and second phosphors 105 and 106 to increase luminous efficiency. The reflector 111 may be formed of any one of a reflective coating film and a reflective coating material layer. The reflector 111 may be formed of at least one of an inorganic material, an organic material, a metal material, and a metal oxide material having excellent heat resistance and light resistance. For example, the reflector 111 may include a metal having a high reflectance, such as aluminum (Al), silver (Ag), gold (Au), titanium dioxide (TiO _{2 ), or a metal oxide.} The reflector 111 may be formed by depositing or coating a metal or a metal oxide on the housing 101 , or may be formed by printing a metal ink. In addition, the reflector 111 may be formed by bonding a reflective film or a reflective sheet on the housing 101 .

The barrier reflector 112 may cover the reflector 111 . The barrier reflector 112 may prevent deterioration of the reflector 111 due to heat emitted from the first and second light emitting diode chips 102 and 103 . The barrier reflector 112 may be formed of an inorganic material or a metal material having high light resistance and reflectance.

4 is a cross-sectional view illustrating a light emitting diode package according to another embodiment of the present invention. Referring to FIG. 4 , the light emitting device includes a housing 101 , a first light emitting diode chip 102 , a second light emitting diode chip 103 , a molding part 104 , a first phosphor 105 , and a second phosphor 106 . ) and the paste member 107 , and the molding part 104 may further include a first molding part 104b and a second molding part 104a. The light emitting diode package according to the present embodiment is substantially similar to the light emitting diode package according to the embodiment except for the first molding part 104b and the second molding part 104a, and thus the overlapping description will be omitted.

The first molding part 104b may cover the first and second light emitting diode chips 102 and 103 . The second molding part 104a may cover the first molding part 104b. The first molding part 104b may be formed of a material having the same hardness as the second molding part 104a or may be formed of a material having a different hardness. The hardness of the first molding part 104b may be lower than that of the second molding part 104a, and in this case, the same as the buffer part 109 of the above-described embodiment, thermal stress due to the light emitting diode chips 102 and 103 . can alleviate

The first molding part 104b may contain the second phosphor 106 emitting red light. The second molding part 104a may contain the first phosphor 105 emitting green light. By disposing the phosphors emitting a long wavelength at the bottom and phosphors emitting a short wavelength at the top, it is possible to prevent the green light emitted from the first phosphor 105 from being absorbed and lost again by the second phosphor 106. .

5 is a cross-sectional view illustrating a light emitting diode package according to another embodiment of the present invention. Referring to FIG. 5 , the light emitting diode package includes a housing 101 , a first light emitting diode chip 102 , a second light emitting diode chip 103 , a molding part 104 , a first phosphor 105 , and a second phosphor ( 106 ), a paste member 107 , and a phosphor plate 118 . The light emitting diode package according to the present embodiment is substantially similar to the light emitting diode package according to the above embodiment except for the phosphor plate 118 , and thus overlapping description will be omitted.

The phosphor plate 118 is spaced apart from the first and second light emitting diode chips 102 and 103 and is disposed on the molding part 104 , and may include first and second phosphors 105 and 106 . The phosphor plate 118 may be formed of the same material as the molding part 104 according to an embodiment of the present invention or a material having a high hardness.

Since the first and second phosphors 105 and 106 are disposed to be spaced apart from the light emitting diode chips 102 and 103 , the first and second phosphors 105 and 106 and the heat or light of the phosphor plate 118 . damage can be reduced. Accordingly, the reliability of the first and second phosphors 105 and 106 may be improved.

An empty space may be formed between the phosphor plate 118 and the first and second light emitting diode chips 102 and 103 instead of the molding part 104 .

The above description is merely illustrative of the technical idea of the present invention, and various modifications, changes, and substitutions are possible within the range that does not depart from the essential characteristics of the present invention by those of ordinary skill in the art to which the present invention pertains. will be. Accordingly, the embodiments disclosed in the present invention and the accompanying drawings are intended to explain, not to limit the technical spirit of the present invention, and the scope of the technical spirit of the present invention is not limited by these embodiments and the accompanying drawings. . The protection scope of the present invention should be construed by the following claims, and all technical ideas within the equivalent range should be construed as being included in the scope of the present invention.

101: housing
102: first light emitting diode chip
103: second light emitting diode chip
104: molding unit
104a: first molding part
104b: second molding part
105: first phosphor
106: second phosphor
109: buffer unit
111: reflector
112: barrier reflector
118: phosphor plate

Claims (18)

a first light emitting diode chip emitting light having a first peak wavelength;
a second light emitting diode chip emitting light having a second peak wavelength different from the first peak wavelength;
a first phosphor excited by at least one of the first light emitting diode chip and the second light emitting diode chip to emit green light; and
a second phosphor excited by at least one of the first light emitting diode chip and the second light emitting diode chip to emit red light;
White light is formed by synthesizing light emitted from the first light emitting diode chip, the second light emitting diode chip, the first phosphor, and the second phosphor;
The second phosphor is a phosphor having _{a chemical formula of A 2} MF ₆ :Mn ⁴⁺ , wherein A is one of Li, Na, K, Rb, Ce, and NH4, and M is one of Si, Ti, Nb and Ta. be,
The first light emitting diode chip and the second light emitting diode chip both emit blue light or ultraviolet light,
A difference between the first peak wavelength and the second peak wavelength is greater than 0 nm and less than or equal to 7 nm. The method according to claim 1,
Further comprising a housing including a mounting region in which the first light emitting diode chip and the second light emitting diode chip are mounted,
The first light emitting diode chip and the second light emitting diode chip are mounted on the mounting region through a paste member. 3. The method according to claim 2,
The paste member is a light emitting diode package having a thermal conductivity A represented by Equation 1 below.
[Equation 1]

In Equation 1, A is the thermal conductivity, W (Watt) is the power consumption of any one of the first light emitting diode chip and the second light emitting diode chip, m is the unit thickness, k (kelvin) is It is the unit temperature difference (Δt). 4. The method according to claim 3,
The paste member is a light emitting diode package comprising at least one of gold, silver aluminum, graphene, and carbon nanotubes as a thermally conductive material. The method according to claim 1,
the white light has x and y color coordinates that form points within the region on the CIE chromaticity diagram;
The x color coordinate is 0.25 to 0.33, and the y color coordinate is 0.22 to 0.35. The method according to claim 1,
The first phosphor is a BAM (Ba-Al-Mg)-based phosphor, a quantum dot phosphor, a silicate-based phosphor, a beta-SiAlON-based phosphor, a Garnet-based phosphor, and an LSN-based phosphor At least one of the light emitting diode package. The method according to claim 1,
The peak wavelength of the green light of the first phosphor is located within the range of 500 to 570 nm,
A peak wavelength of the red light of the second phosphor is located within a range of 610 to 650 nm. delete The method according to claim 1,
The white light is a light emitting diode package having a national television system committee (NTSC) color saturation of 83% or more. The method according to claim 1,
The red light emitted by the second phosphor has a full width at half maximum (FWMH) of 20 nm or less. The method according to claim 1,
Further comprising a molding part covering the first light emitting diode chip and the second light emitting diode chip,
The molding part is a light emitting diode package comprising at least one of silicon, epoxy, PMMA, PE, and PS. 12. The method of claim 11,
The light emitting diode package in which the first and second phosphors are distributed in the molding part. 13. The method of claim 12,
Further comprising a buffer portion disposed between the molding portion and at least one of the first and second light emitting diode packages,
The buffer portion is a light emitting diode package having a lower hardness than the molding portion. 12. The method of claim 11,
The molding part may include: a first molding part covering the first and second light emitting diode packages; and
Comprising a second molding part covering the first molding part,
The first molding part contains the second phosphor,
The second molding part is a light emitting diode package containing the first phosphor. 12. The method of claim 11,
Further comprising a phosphor plate disposed on the molding portion,
The phosphor plate is a light emitting diode package containing the first and second phosphors. 3. The method according to claim 2,
The housing includes a reflector for reflecting the light emitted from the at least one light emitting diode chip. 17. The method of claim 16,
The housing further includes a barrier reflector covering the reflector. The method according to claim 1,
Further comprising at least one third light emitting diode chip,
The at least one third light emitting diode chip is an ultraviolet light emitting diode package or a blue light emitting diode package,
The at least one third light emitting diode chip has a different peak wavelength from that of the first light emitting diode chip and the second light emitting diode chip.

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