KR102267912B1 - 기판 처리 방법 및 기판 처리 장치 - Google Patents
기판 처리 방법 및 기판 처리 장치 Download PDFInfo
- Publication number
- KR102267912B1 KR102267912B1 KR1020190056565A KR20190056565A KR102267912B1 KR 102267912 B1 KR102267912 B1 KR 102267912B1 KR 1020190056565 A KR1020190056565 A KR 1020190056565A KR 20190056565 A KR20190056565 A KR 20190056565A KR 102267912 B1 KR102267912 B1 KR 102267912B1
- Authority
- KR
- South Korea
- Prior art keywords
- liquid
- processing
- substrate
- supplied
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 133
- 238000000034 method Methods 0.000 title claims abstract description 39
- 239000007788 liquid Substances 0.000 claims abstract description 203
- 238000001704 evaporation Methods 0.000 claims abstract description 46
- 230000008020 evaporation Effects 0.000 claims abstract description 45
- 239000003112 inhibitor Substances 0.000 claims abstract description 27
- 239000003960 organic solvent Substances 0.000 claims abstract description 14
- 238000003672 processing method Methods 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 37
- 230000002401 inhibitory effect Effects 0.000 claims description 3
- 239000007791 liquid phase Substances 0.000 claims 2
- 239000007921 spray Substances 0.000 claims 1
- 238000004140 cleaning Methods 0.000 abstract description 18
- 230000006378 damage Effects 0.000 abstract description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 96
- 239000008367 deionised water Substances 0.000 description 17
- 229910021641 deionized water Inorganic materials 0.000 description 17
- 239000000126 substance Substances 0.000 description 12
- 239000000872 buffer Substances 0.000 description 11
- 238000011084 recovery Methods 0.000 description 5
- 239000002699 waste material Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- -1 Sulfuric acid Peroxide Chemical class 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 발명의 일 실시예에 의하면, 기판을 세정할 때에 기판 상의 세정액 주위에 증기분위기를 형성하여 세정액이 유기용제로 치환되는 과정에서 액막 파괴 현상을 방지할 수 있다.
Description
도 2는 도 1의 액 처리 챔버의 일 실시예를 개략적으로 보여주는 도면이다.
도 3은 본 발명의 일 실시예에 따른 액처리 공정 순서를 개략적으로 보여주는 그래프이다.
도 4 내지 도 11은 각각 도3에 따른 세정 과정을 순차적으로 보여주는 도면들이다.
도 12는 도 1의 액 처리 챔버의 변형예를 개략적으로 보여주는 도면이다.
도 13 내지 도 16은 본 발명의 변형예에 따른 액처리 공정 순서를 개략적으로 보여주는 그래프이다.
도 17은 일반적인 세정 공정에서 세정액이 유기용제로 치환되는 과정에서 발생하는 액막 파괴 현상을 보여주는 도면이다.
463: 제1 처리액 공급 유닛
464: 제2 처리액 공급 유닛
470: 증기 발생 조절 유닛
490: 가스 공급 유닛
Claims (17)
- 기판을 처리하는 장치에 있어서,
처리공간을 제공하는 하우징과;
상기 처리공간에서 기판을 지지하는 지지 유닛;
상기 지지 유닛에 지지된 기판의 처리면에 제1 처리액을 공급하는 제1 처리액 공급 유닛;
상기 지지 유닛에 지지된 기판의 상기 처리면에 상기 제1 처리액 보다 표면장력이 낮은 제2 처리액을 액상으로 공급하는 제2 처리액 공급 유닛; 및
상기 처리공간에 증발 억제액을 증기 상태로 분사하는 증기 발생 조절 유닛;을 포함하는 기판 처리 장치. - 제 1항에 있어서,
상기 제1 처리액 공급 유닛, 상기 제2 처리액 공급 유닛 및 상기 증기 발생 조절 유닛을 제어하는 제어기;를 포함하고,
상기 제어기는,
상기 제1 처리액이 공급된 상기 처리면에 상기 제2 처리액을 공급하여 상기 처리면에서 상기 제1 처리액이 상기 제2 처리액으로 치환되고,
상기 제2 처리액의 토출 시점 이전에 상기 처리공간으로 상기 증기가 공급되도록 상기 제1 처리액 공급 유닛, 상기 제2 처리액 공급 유닛 및 상기 증기 발생 조절 유닛을 제어하는 기판 처리 장치. - 제1항에 있어서,
상기 제1 처리액은 DIW이고, 상기 제2 처리액은 유기용제이고, 상기 증발 억제액은 물인 기판 처리 장치. - 제1항에 있어서
상기 증발 억제액의 표면장력은 상기 제2 처리액의 표면장력 보다 큰 기판 처리 장치. - 제1항에 있어서,
상기 증발 억제액의 표면장력은 상기 제1 처리액의 표면장력과 같거나 큰 기판 처리 장치. - 제1항에 있어서,
상기 증발 억제액은 상기 제1 처리액과 동일한 액인 기판 처리 장치. - 제1항 내지 제6항 중 어느 하나에 있어서,
상기 제2 처리액은 상기 처리공간에서 상기 증발 억제액의 상대습도가 100%인 상태에서 상기 처리면에 공급되는 기판 처리 장치. - 제1항 내지 제6항 중 어느 한 항에 있어서,
하우징 내 처리공간의 상대습도를 측정하는 상대습도 측정장치;를 더 포함하는 기판 처리 장치. - 기판을 처리하는 방법에 있어서,
회전하는 기판의 처리면에 제1 처리액을 공급하고, 이후에 상기 기판에 공급된 상기 제1 처리액의 주변이 증기 상태의 증발 억제액으로 제공된 상태에서 상기 기판에 상기 제1 처리액 보다 표면장력이 낮은 제2 처리액을 액상으로 공급하여, 상기 기판 상에서 상기 제1 처리액을 상기 제2 처리액으로 치환하는 기판 처리 방법. - 제9항에 있어서,
상기 제2 처리액이 공급되는 동안 제1 처리액의 주변의 습도는 100%로 유지되는 기판 처리 방법. - 제9항에 있어서,
상기 증발 억제액의 표면장력은 상기 제2 처리액의 표면장력 보다 큰 기판 처리 방법. - 제9항에 있어서,
상기 증발 억제액의 표면장력은 상기 제1 처리액의 표면장력과 같거나 큰 기판 처리 방법. - 제9항에 있어서,
상기 증발 억제액은 상기 제1 처리액과 동일한 액인 기판 처리 방법. - 제9항에 있어서,
상기 제1 처리액은 DIW이고, 상기 제2 처리액은 유기용제이고, 상기 증발 억제액은 물인 기판 처리 방법. - 제9항에 있어서,
상기 증발 억제액은 상기 제1 처리액이 공급되기 전, 또는 상기 제1 처리액의 공급과 동시에, 또는 상기 제1 처리액이 공급되는 도중에 공급되는 기판 처리 방법. - 제9항 또는 제15항에 있어서,
상기 증발 억제액은 제2 처리액이 공급되는 도중까지, 또는 상기 제2 처리액의 공급이 종료될 때까지 계속적으로 공급되는 기판 처리 방법. - 제9항에 있어서,
상기 제2 처리액은 상기 기판의 중앙 영역에서 가장자리 영역으로 탄착 지점이 변경되면서 상기 기판으로 토출되는 기판 처리 방법.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190056565A KR102267912B1 (ko) | 2019-05-14 | 2019-05-14 | 기판 처리 방법 및 기판 처리 장치 |
JP2020084408A JP7282714B2 (ja) | 2019-05-14 | 2020-05-13 | 基板処理方法及び基板処理装置 |
US15/931,911 US11232942B2 (en) | 2019-05-14 | 2020-05-14 | Substrate treating method and substrate treating apparatus |
CN202010406079.3A CN111952218B (zh) | 2019-05-14 | 2020-05-14 | 基板处理方法及基板处理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020190056565A KR102267912B1 (ko) | 2019-05-14 | 2019-05-14 | 기판 처리 방법 및 기판 처리 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20200131950A KR20200131950A (ko) | 2020-11-25 |
KR102267912B1 true KR102267912B1 (ko) | 2021-06-23 |
Family
ID=73222058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020190056565A Active KR102267912B1 (ko) | 2019-05-14 | 2019-05-14 | 기판 처리 방법 및 기판 처리 장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11232942B2 (ko) |
JP (1) | JP7282714B2 (ko) |
KR (1) | KR102267912B1 (ko) |
CN (1) | CN111952218B (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102619967B1 (ko) * | 2020-05-22 | 2024-01-03 | 세메스 주식회사 | 기판 처리 장치 및 액 공급 유닛 |
JP7614273B1 (ja) * | 2023-08-28 | 2025-01-15 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11344286A (ja) * | 1998-06-01 | 1999-12-14 | Daikin Ind Ltd | 基板乾燥方法 |
US6729040B2 (en) * | 1999-05-27 | 2004-05-04 | Oliver Design, Inc. | Apparatus and method for drying a substrate using hydrophobic and polar organic compounds |
US20090081810A1 (en) * | 2004-10-06 | 2009-03-26 | Ebara Corporation | Substrate processing apparatus and substrate processing method |
JP4584783B2 (ja) | 2005-06-22 | 2010-11-24 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法、ならびにコンピュータ読取可能な記憶媒体 |
JP4527660B2 (ja) * | 2005-06-23 | 2010-08-18 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
JP4176779B2 (ja) | 2006-03-29 | 2008-11-05 | 東京エレクトロン株式会社 | 基板処理方法,記録媒体及び基板処理装置 |
JP5143498B2 (ja) * | 2006-10-06 | 2013-02-13 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置、プログラムならびに記録媒体 |
JP5188216B2 (ja) * | 2007-07-30 | 2013-04-24 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
JP5117365B2 (ja) * | 2008-02-15 | 2013-01-16 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記憶媒体 |
JP6317547B2 (ja) * | 2012-08-28 | 2018-04-25 | 株式会社Screenホールディングス | 基板処理方法 |
US20140231012A1 (en) * | 2013-02-15 | 2014-08-21 | Dainippon Screen Mfg, Co., Ltd. | Substrate processing apparatus |
JP6242057B2 (ja) * | 2013-02-15 | 2017-12-06 | 株式会社Screenホールディングス | 基板処理装置 |
KR101579507B1 (ko) | 2013-05-08 | 2015-12-22 | 세메스 주식회사 | 기판 처리 장치 |
JP6371253B2 (ja) * | 2014-07-31 | 2018-08-08 | 東京エレクトロン株式会社 | 基板洗浄システム、基板洗浄方法および記憶媒体 |
JP6454245B2 (ja) | 2014-10-21 | 2019-01-16 | 東京エレクトロン株式会社 | 基板液処理方法及び基板液処理装置並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
JP6611172B2 (ja) * | 2016-01-28 | 2019-11-27 | 株式会社Screenホールディングス | 基板処理方法 |
JP2017157800A (ja) * | 2016-03-04 | 2017-09-07 | 東京エレクトロン株式会社 | 液処理方法、基板処理装置、及び記憶媒体 |
JP6672023B2 (ja) * | 2016-03-08 | 2020-03-25 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
EP3340280A1 (en) * | 2016-12-26 | 2018-06-27 | SCREEN Holdings Co., Ltd. | Substrate treating apparatus and substrate treating method |
JP7034634B2 (ja) * | 2017-08-31 | 2022-03-14 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP6946474B2 (ja) * | 2018-01-29 | 2021-10-06 | 東京エレクトロン株式会社 | 基板乾燥装置、基板乾燥方法および記憶媒体 |
JP7018792B2 (ja) * | 2018-03-22 | 2022-02-14 | 株式会社Screenホールディングス | 基板処理方法及び基板処理装置 |
US10962285B2 (en) * | 2018-07-13 | 2021-03-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer drying system |
US11923210B2 (en) * | 2018-08-30 | 2024-03-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods for in-situ Marangoni cleaning |
-
2019
- 2019-05-14 KR KR1020190056565A patent/KR102267912B1/ko active Active
-
2020
- 2020-05-13 JP JP2020084408A patent/JP7282714B2/ja active Active
- 2020-05-14 CN CN202010406079.3A patent/CN111952218B/zh active Active
- 2020-05-14 US US15/931,911 patent/US11232942B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2020188257A (ja) | 2020-11-19 |
KR20200131950A (ko) | 2020-11-25 |
US11232942B2 (en) | 2022-01-25 |
CN111952218B (zh) | 2024-08-27 |
CN111952218A (zh) | 2020-11-17 |
US20200365395A1 (en) | 2020-11-19 |
JP7282714B2 (ja) | 2023-05-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7806989B2 (en) | Substrate processing method and substrate processing apparatus | |
JP4870837B2 (ja) | 基板乾燥装置及びその方法 | |
KR101350052B1 (ko) | 기판처리방법 및 기판처리장치 | |
KR102267912B1 (ko) | 기판 처리 방법 및 기판 처리 장치 | |
KR102584514B1 (ko) | 기판 반송 장치, 기판 처리 장치 및 방법 | |
KR102278561B1 (ko) | 기판 처리 방법 및 기판 처리 장치 | |
KR102454444B1 (ko) | 기판 처리 장치 | |
KR102265857B1 (ko) | 기판 처리 방법 및 기판 처리 장치 | |
KR102152911B1 (ko) | 기판 세정 조성물, 기판 처리 방법 및 기판 처리 장치 | |
KR102012206B1 (ko) | 기판 처리 장치 및 방법 | |
KR101021544B1 (ko) | 기판 처리 장치 및 그의 기판 처리 방법 | |
KR102279716B1 (ko) | 기판 처리 장치 및 기판 건조 방법 | |
KR20230132757A (ko) | 기판 처리 장치 및 기판 처리 방법 | |
KR102061004B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
US10460923B2 (en) | Apparatus and method for treating substrate | |
KR20080009838A (ko) | 기판 처리 장치 및 방법 | |
KR102724523B1 (ko) | 기판 처리 방법 및 기판 처리 장치 | |
KR20210098895A (ko) | 기판 처리 방법 및 기판 처리 장치 | |
KR102121239B1 (ko) | 기판처리장치 및 방법 | |
KR102347973B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
KR102180009B1 (ko) | 기판처리장치 및 방법 | |
US20250166987A1 (en) | Apparatus and method of treating substrate | |
KR102162189B1 (ko) | 기판 처리 방법 및 기판 처리 장치 | |
KR20240107908A (ko) | 기판 처리 장치 | |
KR20250077068A (ko) | 기판 처리 장치 및 기판 처리 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20190514 |
|
PA0201 | Request for examination | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20200710 Patent event code: PE09021S01D |
|
PG1501 | Laying open of application | ||
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20210526 |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20210616 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 20210617 End annual number: 3 Start annual number: 1 |
|
PG1601 | Publication of registration |