KR102264959B1 - 고투자율의 이종복합자성시트 및 그의 제조방법 - Google Patents
고투자율의 이종복합자성시트 및 그의 제조방법 Download PDFInfo
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- KR102264959B1 KR102264959B1 KR1020170096453A KR20170096453A KR102264959B1 KR 102264959 B1 KR102264959 B1 KR 102264959B1 KR 1020170096453 A KR1020170096453 A KR 1020170096453A KR 20170096453 A KR20170096453 A KR 20170096453A KR 102264959 B1 KR102264959 B1 KR 102264959B1
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- 238000004891 communication Methods 0.000 description 4
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- 239000010959 steel Substances 0.000 description 3
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
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- 229910017518 Cu Zn Inorganic materials 0.000 description 1
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- 229910017752 Cu-Zn Inorganic materials 0.000 description 1
- 229910017931 Cu—Si Inorganic materials 0.000 description 1
- 229910017943 Cu—Zn Inorganic materials 0.000 description 1
- 208000032368 Device malfunction Diseases 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910001047 Hard ferrite Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910008423 Si—B Inorganic materials 0.000 description 1
- 229910008458 Si—Cr Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
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- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- WCCJDBZJUYKDBF-UHFFFAOYSA-N copper silicon Chemical compound [Si].[Cu] WCCJDBZJUYKDBF-UHFFFAOYSA-N 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
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- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
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- 239000007779 soft material Substances 0.000 description 1
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- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/0302—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity characterised by unspecified or heterogeneous hardness or specially adapted for magnetic hardness transitions
- H01F1/0311—Compounds
- H01F1/0313—Oxidic compounds
- H01F1/0315—Ferrites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/14—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing iron or nickel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Soft Magnetic Materials (AREA)
- Hard Magnetic Materials (AREA)
Abstract
Description
도 2는 본 발명의 일실시예에 따른 이종복합자성시트 제조방법의 흐름도이다.
도 3a는 본 발명의 일실시예에 따른 이종복합자성시트 제조방법에서 사용되는 자성금속분말의 SEM 이미지이고, 도 3b는 도 3a의 확대도이다.
도 4a 내지 도 4e는 자성금속분말의 볼밀링 시간을 각각 1시간, 2시간, 4시간, 6시간 및 8시간으로 설정하여 수행한 후의 SEM 이미지이다.
도 5는 자성층의 SEM 단면이미지이다.
도 6은 자성층 상에 형성된 페라이트 박막층의 Fe-SEM 이미지이다.
도 7은 본 발명의 일실시예에 따라 제조된 이종복합자성시트 및 종래의 자성시트의 자성특성측정결과를 도시한 그래프이다.
110 자성층
120 페라이트 박막층
Claims (8)
- 자성층; 및
상기 자성층 상에 형성된 페라이트 박막층;을 포함하는 이종복합자성시트로서,
자성층은 시트 표면과 평행하게 배열되어 있는 편상형 자성금속분말을 포함하여 시트의 자성 특성을 효과적으로 전달하고,
페라이트 박막층은 자성층 상에 스핀스프레이 공정으로 주상구조를 갖도록 성장되어 고주파수영역에서 고투자율을 갖는 것을 특징으로 하는 이종복합자성시트. - 청구항 1에 있어서,
상기 자성층은 상기 페라이트 박막층 두께의 100 내지 300배의 두께를 갖는 것을 특징으로 하는 이종복합자성시트. - 청구항 1에 있어서,
상기 자성층은 Fe-Si 및 Fe-Si-Al 중 적어도 하나를 포함하고,
상기 페라이트 박막층은 Ni-Zn 페라이트를 포함하는 것을 특징으로 하는 이종복합자성시트. - 청구항 1에 있어서,
상기 자성층은 자성금속 및 소수성 경화형 바인더를 포함하는 것을 특징으로 하는 이종복합자성시트. - 자성층 형성단계; 및
상기 자성층 상에 페라이트 박막층을 형성하는 단계;를 포함하는 이종복합자성시트 제조방법으로서,
상기 자성층 형성단계는,
자성금속분말을 볼밀링하여 상기 자성금속분말을 편상화시키는 단계;
상기 편상화된 자성금속분말 및 바인더를 혼합하여 자성금속슬러리를 형성하는 단계; 및
상기 자성금속슬러리를 시트성형하는 단계;를 포함하고,
상기 페라이트 박막층은 상기 자성층 상에 페라이트를 스핀스프레이 공정수행하여 형성되며,
편상화된 자성금속분말은 시트 표면과 평행하게 배열되어 있어 시트의 자성 특성을 효과적으로 전달하고,
페라이트 박막층은 자성층 상에 스핀스프레이 공정으로 주상구조를 갖도록 성장되어 고주파수영역에서 고투자율을 갖는 것을 특징으로 하는 이종복합자성시트 제조방법. - 삭제
- 삭제
- 청구항 5에 있어서,
상기 바인더는 소수성 경화형 바인더이고,
상기 스핀스프레이 공정은 수용성 용액 기반으로 수행되는 것을 특징으로 하는 이종복합자성시트 제조방법.
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US20140302344A1 (en) * | 2011-10-27 | 2014-10-09 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf | Thin film ferrite lamination |
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US20140302344A1 (en) * | 2011-10-27 | 2014-10-09 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf | Thin film ferrite lamination |
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