KR102246974B1 - Resin composition for semiconductor package, prepreg and metal clad laminate using the same - Google Patents

Abstract

The present invention includes a thermosetting resin composition for a semiconductor package containing an amine compound containing a specific functional group, a thermosetting resin, a thermoplastic resin, and an inorganic filler and having a glass transition temperature of 230°C or less, and a prepreg and a metal clad laminate comprising the composition. About.

Description

Thermosetting resin composition for semiconductor package, prepreg and metal foil laminate {RESIN COMPOSITION FOR SEMICONDUCTOR PACKAGE, PREPREG AND METAL CLAD LAMINATE USING THE SAME}

The present invention relates to a thermosetting resin composition for a semiconductor package, a prepreg, and a metal clad laminate, and in more detail, excellent flowability can be secured, a low glass transition temperature and modulus, a low coefficient of thermal expansion can be implemented, and warpage (warpage ) The present invention relates to a thermosetting resin composition for a semiconductor package capable of minimizing the phenomenon, and a prepreg and a metal foil laminate including the same.

The copper clad laminate used in the conventional printed circuit board becomes a prepreg when a substrate of glass fabric is impregnated with the varnish of the thermosetting resin and then semi-cured to form a prepreg, which is heated and pressurized again with copper foil. To manufacture. The prepreg is used again for the purpose of constructing a circuit pattern on such a copper clad laminate and performing a build-up on it.

As high performance, thinner, and lighter weights of electronic devices, communication devices, personal computers, and smart phones are accelerated, the need for thinner semiconductor packages is also required, and at the same time, the need for thinner printed circuit boards for semiconductor packages is increasing.

However, in the process of thinning, there is a problem that the rigidity of the printed circuit board decreases, and at the same time, a warpage problem of the semiconductor package occurs due to a difference in thermal expansion coefficient between the chip and the printed circuit board. This warping phenomenon is intensified as a phenomenon in which the printed circuit board does not return to its original state while undergoing a high-temperature process such as reflow.

Accordingly, research is being conducted on a technology to lower the thermal expansion coefficient of the substrate in order to improve the warpage, and for example, a technology for filling the prepreg with a high content of filler has been proposed, but simply adding a high content of the filler to the prepreg. There was a limit to decreasing the flowability of the prepreg when filling with only.

Accordingly, there is a need to develop a prepreg and a metal-clad laminate that can achieve a low coefficient of thermal expansion while securing flowability and reduce warpage occurrence.

An object of the present invention is to provide a thermosetting resin composition for a semiconductor package capable of securing excellent flowability, realizing a low glass transition temperature and modulus, and a low coefficient of thermal expansion, and minimizing warpage.

In addition, the present invention is to provide a prepreg comprising the thermosetting resin composition for a semiconductor package.

In addition, the present invention is to provide a metal foil laminate comprising the prepreg.

In this specification, a sulfone group; Carbonyl group; Halogen group; An alkyl group having 1 to 20 carbon atoms unsubstituted or substituted with a nitro group, a cyano group, or a halogen group; An aryl group having 6 to 20 carbon atoms unsubstituted or substituted with a nitro group, a cyano group, or a halogen group; A heteroaryl group having 2 to 30 carbon atoms unsubstituted or substituted with a nitro group, a cyano group, or a halogen group; And an alkylene group having 1 to 20 carbon atoms substituted or unsubstituted with a nitro group, a cyano group, or a halogen group; an amine compound containing at least one functional group selected from the group consisting of, a thermosetting resin, a thermoplastic resin, and an inorganic filler. , A thermosetting resin composition for a semiconductor package having a glass transition temperature of 230°C or less is provided.

The present specification also provides a prepreg obtained by impregnating a fiber substrate with the thermosetting resin composition for a semiconductor package.

In the present specification, the prepreg; And a metal foil integrated with the prepreg by heating and pressing.

Hereinafter, a thermosetting resin composition for a semiconductor package according to a specific embodiment of the present invention and a prepreg and a metal foil laminate using the same will be described in more detail.

According to one embodiment of the invention, a sulfone group; Carbonyl group; Halogen group; An alkyl group having 1 to 20 carbon atoms unsubstituted or substituted with a nitro group, a cyano group, or a halogen group; An aryl group having 6 to 20 carbon atoms unsubstituted or substituted with a nitro group, a cyano group, or a halogen group; A heteroaryl group having 2 to 30 carbon atoms unsubstituted or substituted with a nitro group, a cyano group, or a halogen group; And an alkylene group having 1 to 20 carbon atoms substituted or unsubstituted with a nitro group, a cyano group, or a halogen group; an amine compound containing at least one functional group selected from the group consisting of, a thermosetting resin, a thermoplastic resin, and an inorganic filler. , it may be provided having a glass transition temperature not higher than 230 ℃, the thermosetting resin composition for semiconductor package.

The inventors of the present invention have conducted research on a material for a semiconductor package, so that a composition having the above-described characteristics can secure excellent flowability, a low glass transition temperature and a modulus, a low coefficient of thermal expansion, and a warpage phenomenon. It was confirmed through an experiment that it can be minimized and the invention was completed.

More specifically, the resin composition for a semiconductor package of the embodiment is a sulfone group; Carbonyl group; Halogen group; An alkyl group having 1 to 20 carbon atoms unsubstituted or substituted with a nitro group, a cyano group, or a halogen group; An aryl group having 6 to 20 carbon atoms unsubstituted or substituted with a nitro group, a cyano group, or a halogen group; A heteroaryl group having 2 to 30 carbon atoms unsubstituted or substituted with a nitro group, a cyano group, or a halogen group; And a nitro group, a cyano group, or an alkylene group having 1 to 20 carbon atoms unsubstituted or substituted with a halogen group; and an amine compound containing at least one functional group selected from the group consisting of, wherein the amine compound is a strong electron attracting functional group (Electron Withdrawing Group, EWG) exhibits a relatively low reactivity, so that the curing reaction of the thermosetting resin composition can be easily controlled.

In particular, the resin composition for a semiconductor package of the embodiment includes the thermosetting resin content of 400 parts by weight or less, based on 100 parts by weight of the amine compound, so that the thermosetting resin is at a more sufficient level without the influence of the filler added in a high content. By inducing uniformly curable, the reliability of the final product can be improved, mechanical properties such as toughness can also be increased, and the glass transition temperature can be lowered to 230°C or less.

Conventionally, such as including the thermosetting resin content of 400 parts by weight or less with respect to 100 parts by weight of the amine curing agent, when an amine curing agent is added in a relatively excessive amount, flowability and moldability are reduced due to excessive curing of the thermosetting resin. There was. However, even if a specific amine curing agent with reduced reactivity including an electron withdrawing group (EWG) is added in an excessive amount as described above, due to the decrease in the reactivity of the curing agent, the curing rate of the thermosetting resin can be suppressed from rapidly increasing. Thus, the resin composition for a semiconductor package or a prepreg obtained therefrom can exhibit high flowability even when stored for a long period of time, thereby having excellent moldability.

The thermosetting resin content is 400 parts by weight or less, or 150 parts by weight to 400 parts by weight, or 180 parts by weight to 300 parts by weight, or 180 parts by weight to 290 parts by weight, or 190 parts by weight, based on 100 parts by weight of the amine curing agent. It may be 290 parts by weight. When the amine curing agent or thermosetting resin is a mixture of two or more, the thermosetting resin mixture content is also 400 parts by weight or less, or 150 parts by weight to 400 parts by weight, or 180 parts by weight to 300 parts by weight, based on 100 parts by weight of the amine curing agent mixture, Alternatively, it may be 180 parts by weight to 290 parts by weight, or 190 parts by weight to 290 parts by weight.

When the content of the thermosetting resin is excessively increased to more than 400 parts by weight based on 100 parts by weight of the amine curing agent, it is difficult to uniformly cure the thermosetting resin to a more sufficient level due to the increase in curing density and the effect of the filler added in a high content. The reliability of the product being produced can be reduced, and mechanical properties such as toughness can also be reduced.

Meanwhile, the resin composition for a semiconductor package may have an equivalent ratio calculated by Equation 1 below of 1.4 or more, or 1.4 to 2.5, or 1.45 to 2.5, or 1.45 to 2.1, or 1.45 to 1.8, or 1.49 to 1.75.

[Equation 1]

Equivalent ratio = total active hydrogen equivalent contained in the amine curing agent / total curable functional group equivalent contained in the thermosetting resin

More specifically, in Equation 1, the total active hydrogen equivalent contained in the amine curing agent is a value obtained by dividing the total weight (unit: g) of the amine curing agent by the active hydrogen unit equivalent (g/eq) of the amine curing agent Means.

When the amine curing agent is a mixture of two or more types, the weight (unit: g) for each compound is obtained by dividing the active hydrogen unit equivalent (g/eq), and the sum of these values is contained in the amine curing agent of Equation 1 The total activated hydrogen equivalent can be obtained.

The active hydrogen contained in the amine curing agent _{means a hydrogen atom contained in the amino group (-NH 2} ) present in the amine curing agent, and the active hydrogen can form a cured structure through reaction with the curable functional group of the thermosetting resin. have.

In addition, in Equation 1, the total curable functional group equivalent contained in the thermosetting resin means a value obtained by dividing the total weight (unit: g) of the thermosetting resin by the curable functional group unit equivalent (g/eq) of the thermosetting resin. do.

When the thermosetting resin is a mixture of two or more, the weight (unit: g) for each compound is obtained by dividing the curable functional group unit equivalent (g/eq), and the sum of these values is contained in the thermosetting resin of Equation 1 The total curable functional group equivalent can be determined.

The curable functional group contained in the thermosetting resin refers to a functional group that forms a cured structure through the reaction of the amine curing agent with active hydrogen, and the type of the curable functional group may also vary depending on the type of the thermosetting resin.

For example, when an epoxy resin is used as the thermosetting resin, the curable functional group contained in the epoxy resin may be an epoxy group, and when a bismaleimide resin is used as the thermosetting resin, the curability contained in the bismaleimide resin The functional group can be a maleimide group.

That is, the fact that the resin composition for a semiconductor package satisfies the equivalent ratio calculated by Equation 1 above 1.4 means that the amine curing agent is contained in a sufficient level so that the curable functional groups contained in all thermosetting resins can cause a curing reaction. Means. Therefore, when the equivalent ratio calculated by Equation 1 in the resin composition for a semiconductor package decreases to less than 1.4, it is difficult for the thermosetting resin to be uniformly cured to a more sufficient level due to the effect of the filler added in a high content, and the final product is produced. There is a disadvantage that the reliability of the can be reduced, and the mechanical properties can also be reduced.

The amine compound is a sulfone group; Carbonyl group; Halogen group; An alkyl group having 1 to 20 carbon atoms unsubstituted or substituted with a nitro group, a cyano group, or a halogen group; An aryl group having 6 to 20 carbon atoms unsubstituted or substituted with a nitro group, a cyano group, or a halogen group; A heteroaryl group having 2 to 30 carbon atoms unsubstituted or substituted with a nitro group, a cyano group, or a halogen group; And an alkylene group having 1 to 20 carbon atoms substituted or unsubstituted with a nitro group, a cyano group, or a halogen group; and at least one functional group selected from the group consisting of, and may be an aromatic amine compound containing 2 to 5 amine groups. have.

More specifically, the amine compound may include one or more compounds selected from the group consisting of the following Chemical Formulas 1 to 3.

[Formula 1]

In Formula 1, A is a sulfone group, a carbonyl group, or an alkylene group having 1 to 10 carbon atoms, and X ₁ to X ₈ are each independently a nitro group, a cyano group, a hydrogen atom, a halogen group, an alkyl group having 1 to 6 carbon atoms , A C6-C15 aryl group, or a C2-C20 heteroaryl group, and R _1, R ₁ ′ _, R ₂ and R ₂ ′ are each independently a hydrogen atom, a halogen group, a C 1 to C 6 alkyl group, It is a C6-C15 aryl group, or a C2-C20 heteroaryl group, and n may be an integer of 1-10.

The alkylene group having 1 to 10 carbon atoms, an alkyl group having 1 to 6 carbon atoms, an aryl group having 6 to 15 carbon atoms, and a heteroaryl group having 2 to 20 carbon atoms are each independently selected from the group consisting of a nitro group, a cyano group, and a halogen group It may be substituted with the above functional groups.

[Formula 2]

In Formula 2, Y ₁ to Y ₈ are each independently a nitro group, a cyano group, a hydrogen atom, a halogen group, an alkyl group having 1 to 6 carbon atoms, an aryl group having 6 to 15 carbon atoms, or a heteroaryl group having 2 to 20 carbon atoms And R _3, R ₃ ' _, R ₄ and R _4'are each independently a hydrogen atom, a halogen group, an alkyl group having 1 to 6 carbon atoms, an aryl group having 6 to 15 carbon atoms, or a heteroaryl group having 2 to 20 carbon atoms. , m is an integer of 1 to 10, and the alkyl group having 1 to 6 carbon atoms, an aryl group having 6 to 15 carbon atoms, and the heteroaryl group having 2 to 20 carbon atoms are each independently selected from the group consisting of a nitro group, a cyano group, and a halogen group. It may be substituted with one or more functional groups.

[Formula 3]

In Formula 3, Z ₁ to Z ₄ are each independently a nitro group, a cyano group, a hydrogen atom, a halogen group, an alkyl group having 1 to 6 carbon atoms, an aryl group having 6 to 15 carbon atoms, or a heteroaryl group having 2 to 20 carbon atoms And R _5, R ₅ ′ _, R ₆ and R ₆ ′ are each independently a hydrogen atom, a halogen group, an alkyl group having 1 to 6 carbon atoms, an aryl group having 6 to 15 carbon atoms, or a heteroaryl group having 2 to 20 carbon atoms , The alkyl group having 1 to 6 carbon atoms, an aryl group having 6 to 15 carbon atoms, and the heteroaryl group having 2 to 20 carbon atoms may each independently be substituted with one or more functional groups selected from the group consisting of a nitro group, a cyano group, and a halogen group. .

The alkyl group is a monovalent functional group derived from alkane, for example, as a straight chain, branched or cyclic, methyl, ethyl, propyl, isobutyl, sec-butyl, tert-butyl, pentyl, It can be hexyl or the like. One or more hydrogen atoms included in the alkyl group may each be substituted with a substituent.

The alkylene group is a divalent functional group derived from alkane, for example, as a straight chain, branched or cyclic, methylene group, ethylene group, propylene group, isobutylene group, sec-butylene group, It may be a tert-butylene group, a pentylene group, a hexylene group, and the like. At least one hydrogen atom included in the alkylene group may be substituted with the same substituent as in the case of the alkyl group.

The aryl group is a monovalent functional group derived from arene, and may be, for example, monocyclic or polycyclic. Specifically, the monocyclic aryl group may be a phenyl group, a biphenyl group, a terphenyl group, or a stilbenyl group, but is not limited thereto. The polycyclic aryl group may be a naphthyl group, an anthryl group, a phenanthryl group, a pyrenyl group, a perylenyl group, a chrysenyl group, a fluorenyl group, and the like, but is not limited thereto. One or more hydrogen atoms of these aryl groups may each be substituted with the same substituents as in the case of the alkyl group.

The heteroaryl group is a heterocyclic group including O, N or S as a heteroatom, and the number of carbon atoms is not particularly limited, but may have 2 to 30 carbon atoms. Examples of heterocyclic groups include thiophene group, furan group, pyrrole group, imidazole group, thiazole group, oxazole group, oxadiazole group, triazole group, pyridyl group, bipyridyl group, triazine group, acridyl group, pyridazine group , Quinolinyl group, isoquinoline group, indole group, carbazole group, benzoxazole group, benzoimidazole group, benzothiazole group, benzocarbazole group, benzothiophene group, dibenzothiophene group, benzofuranyl group and dibenzofuran And the like, but are not limited to these. At least one hydrogen atom in the heteroaryl group may be substituted with the same substituent as in the case of the alkyl group.

The term "substituted" means that other functional groups are bonded in place of a hydrogen atom in the compound, and the position to be substituted is not limited as long as the position at which the hydrogen atom is substituted, that is, the position where the substituent can be substituted. The substituents may be the same or different from each other.

More specifically, Formula 1 may include a compound represented by Formula 1-1 below.

[Formula 1-1]

In Formula 1-1, _{the contents of A, X 1} to X ₈ , R _1, R ₁ ′ _, R ₂ and R ₂ ′, n include the contents described above in Formula 1 above.

Specific examples of Formula 1-1 include 4,4'-diaminodiphenyl sulfone (in Formula 1-1, A is a sulfone group, X ₁ to X _8, R _1, R ₁ ′ _, R ₂ and R ₂ ′ are each independently a hydrogen atom, n is 1.), bis (4- aminophenyl) methanone ( formula 1-1 in a is a carbonyl _{group, X 1, X 2, R} 1, R 1 ', R 2 and R _2' are each Independently, it is a hydrogen atom, and n is 1.), 4,4'-(perfluoropropane-2,2-diyl)dianiline (in Formula 1-1, A is perfluoropropane-2,2-diyl, X ₁ to X _8, R _1, R ₁ ′ _, R ₂ and R ₂ ′ are each independently a hydrogen atom, and n is 1.), 4,4'-(2,2,2-trifluoroethane-1,1-diyl)dianiline ( In Formula 1-1, A is 2,2,2-trifluoroethane-1,1-diyl, X ₁ to X _8, R _1, R ₁ ′ _, R ₂ and R ₂ ′ are each independently a hydrogen atom, and n is 1).

In addition, Formula 2 may include a compound represented by Formula 2-1 below.

[Formula 2-1]

In Formula 2-1, _{the contents of Y 1} to Y ₈ , R _3, R ₃ ′ _, R ₄ and R ₄ ′, and m include the contents described above in Formula 2 above.

Specific examples of Formula 2-1 include 2,2',3,3',5,5',6,6'-octafluorobiphenyl-4,4'-diamine (Y ₁ to Y ₈ in Formula 2-1 are halogen a fluorine _{group, R 3, R 3 ',} R 4 and R _4' are each independently a hydrogen atom, m is 1.), 2,2'-bis ( trifluoromethyl) biphenyl-4,4'-diamine ( Y ₂ and Y ₇ is a trifluoromethyl group, _{respectively, Y 1, Y 3, Y} 4, Y 5, Y 6, Y 8 are each a hydrogen _{atom, R 3, R 3 ',} R 4 and R _4' independently Is a hydrogen atom, and m is 1.) and the like.

In addition, Formula 3 may include a compound represented by Formula 3-1 below.

[Chemical Formula 3-1]

In Formula 3-1, _{the contents of Z 1} to Z ₄ , R _5, R ₅ ′ _, R ₆ and R ₆ ′ include the contents described above in Formula 3 above.

Specific examples of Chemical Formula 3-1 include 2,3,5,6-tetrafluorobenzene-1,4-diamine (Z ₁ to Z ₄ in Chemical Formula 3-1 are halogen and fluorine groups _, R _5, R ₅ ' _, R ₆ And R ₆ ′ each independently represent a hydrogen atom.) and the like.

Meanwhile, the thermosetting resin composition for a semiconductor package may have a glass transition temperature of 230° C. or less, or 170 to 230° C., or 180 to 220° C. after thermal curing, as it includes the above-described components.

In addition, the storage modulus at 30° C. and 180° C. measured after curing of the thermosetting resin composition for a semiconductor package may be 16 Gpa or less, respectively. In addition, the storage modulus at 260° C. measured after curing of the thermosetting resin composition for a semiconductor package may be 8 Gpa or less.

The thermosetting resin composition for a semiconductor package has a low storage modulus of 16 Gpa or less in a relatively low temperature range such as 30°C and 180°C after curing, and thus may exhibit a relatively deformable force at the same coefficient of thermal expansion, and thus 30 In a low temperature range such as °C and 180 °C, the warpage of the semiconductor package may be relatively low.

Since the thermosetting resin composition for a semiconductor package has the above-described storage modulus at 260° C. after curing, it can exhibit a relatively deformable force at the same coefficient of thermal expansion, and accordingly, the warpage of the semiconductor package at 260° C. is relatively low. Can have.

The thermosetting resin composition for a semiconductor package may have a thermal expansion coefficient of 12 ppm/° C. or less, or 5 to 12 ppm/° C., or 4 to 10 ppm/° C. after curing.

The thermosetting resin composition for a semiconductor package of the above embodiment may include an amine compound, a thermosetting resin, a thermoplastic resin, and an inorganic filler.

Although the content of the components is not largely limited, the above-described components may be included in consideration of the physical properties of the final product prepared from the thermosetting resin composition for a semiconductor package of the embodiment, and the content ratio between these components will be described later. As shown.

The thermosetting resin may include an epoxy resin. The epoxy resin may be used without limitation, which is usually used in a thermosetting resin composition for a semiconductor package, and its type is not limited, and a bisphenol A type epoxy resin, a phenol novolac epoxy resin, a phenyl aralkyl epoxy resin, a tetra It may be one or more selected from the group consisting of a phenyl ethane epoxy resin, a naphthalene-based epoxy resin, a biphenyl-based epoxy resin, a dicyclopentadiene epoxy resin, and a mixture of a dicyclopentadiene-based epoxy resin and a naphthalene-based epoxy resin.

Specifically, the epoxy resin is a bisphenol-type epoxy resin represented by the following Formula 5, a novolak-type epoxy resin represented by the following Formula 6, a phenyl aralkyl-based epoxy resin represented by the following Formula 7, and a tetraphenyl represented by the following Formula 8. 1 selected from the group consisting of an ethane type epoxy resin, a naphthalene type epoxy resin represented by the following Formulas 9 and 10, a biphenyl type epoxy resin represented by the following Formula 11, and a dicyclopentadiene type epoxy resin represented by the following Formula 12 More than one species can be used.

[Formula 5]

In Chemical Formula 5,

또는

이고, R is

or

ego,

n is 0 or an integer from 1 to 50.

More specifically, the epoxy resin of Formula 5 may be a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a bisphenol M type epoxy resin, or a bisphenol S type epoxy resin, depending on the type of R.

[Formula 6]

In Chemical Formula 6,

R is H or CH ₃ ,

n is 0 or an integer from 1 to 50.

More specifically, the novolak-type epoxy resin of Formula 6 may be a phenol novolak-type epoxy resin or a cresol novolac-type epoxy resin, respectively, depending on the type of R.

[Formula 7]

[Formula 8]

[Formula 9]

[Formula 10]

[Formula 11]

In Formula 11,

n is 0 or an integer from 1 to 50.

[Formula 12]

In Formula 12, n is 0 or an integer of 1 to 50.

Meanwhile, the thermosetting resin may further include at least one resin selected from the group consisting of a bismaleimide resin, a cyanate ester resin, and a bismaleimide-triazine resin.

The bismaleimide resin may be used without limitation, which is usually used in a thermosetting resin composition for a semiconductor package, and the type is not limited. For a preferred example, the bismaleimide resin is a diphenylmethane-type bismaleimide resin represented by the following formula (13), a phenylene-type bismaleimide resin represented by the following formula (14), and a bisphenol A-type diphenyl represented by the following formula (15). It may be one or more selected from the group consisting of an ether bismaleimide resin and an oligomer of diphenylmethane-type bismaleimide and phenylmethane-type maleimide resin represented by Formula 16 below.

[Formula 13]

In Chemical Formula 13,

R ₁ and R ₂ are each independently H, CH ₃ or C ₂ H ₅ .

[Formula 14]

[Formula 15]

[Formula 16]

In Chemical Formula 16,

n is 0 or an integer from 1 to 50.

In addition, a specific example of the cyanate-based resin may be a cyanate ester resin, and what is usually used in a thermosetting resin composition for a semiconductor package may be used without limitation, and the type is not limited.

For a preferred example, the cyanate ester resin is a novolac-type cyanate resin represented by the following formula (17), a dicyclopentadiene-type cyanate resin represented by the following formula (18), and a bisphenol-type cyanate resin represented by the following formula (19). And some of these triazine-formed prepolymers, and these may be used alone or in combination of two or more.

[Formula 17]

In Chemical Formula 17,

n is 0 or an integer from 1 to 50.

[Formula 18]

In Chemical Formula 18,

n is 0 or an integer from 1 to 50.

[Formula 19]

In Chemical Formula 19,

또는

이다.R is

or

to be.

More specifically, the cyanate resin of Formula 19 may be a bisphenol A type cyanate resin, a bisphenol E type cyanate resin, a bisphenol F type cyanate resin, or a bisphenol M type cyanate resin, depending on the type of R. .

In addition, the bismaleimide resin may include a bismaleimide-triazine resin, and the bismaleimide-triazine resin may be used without limitation, which is usually used in a thermosetting resin composition for a semiconductor package. The type is not limited.

On the other hand, the thermoplastic resin has an effect of increasing toughness after curing of the prepreg, and may play a role of reducing warpage of a semiconductor package by lowering a coefficient of thermal expansion and an elastic modulus. A specific example of the thermoplastic resin may be a (meth)acrylate-based polymer.

Examples of the (meth)acrylate-based polymer are not largely limited, for example, an acrylic acid ester copolymer including a repeating unit derived from a (meth)acrylate-based monomer and a repeating unit derived from a (meth)acrylonitrile; Or it may be an acrylic acid ester copolymer containing repeating units derived from butadiene. For example, the (meth)acrylate-based polymer contains monomers such as butyl acrylate, ethyl acrylate, acrylonitrile, methyl methacrylate, and glycidyl methacrylate in the range of 1 to 40% by weight, respectively ( It may be a copolymer that is used in (relative to the total weight of the entire monomer).

The (meth)acrylate-based polymer may have a weight average molecular weight of 500,000 to 1,000,000. If the weight average molecular weight of the (meth)acrylate-based polymer is too small, after curing, the effect of increasing the toughness of the prepreg or reducing the coefficient of thermal expansion and elasticity decreases, which may be technically disadvantageous. In addition, if the weight average molecular weight of the (meth)acrylate-based polymer is too large, the flowability of the prepreg may be reduced.

The amount of the thermoplastic resin to be used may be determined in consideration of the use and characteristics of the final product, for example, the thermosetting resin composition for a semiconductor package includes 10 to 200 parts by weight of the thermoplastic resin based on 100 parts by weight of the thermosetting resin. can do.

Meanwhile, the thermosetting resin composition for a semiconductor package of the embodiment may include the above-described amine compound, and may further include an additional curing agent other than the amine compound.

More specifically, the thermosetting resin composition for a semiconductor package of the embodiment is a second amine compound different from the amine compound, an acid anhydride resin, a bismaleimide resin, a cyanate resin, a phenol novolak resin, and a benzoxazine resin. It may further include one or more curing agents selected from the group consisting of.

In addition, the thermosetting resin composition for a semiconductor package of the embodiment may include an inorganic filler.

The inorganic filler can be used without limitation, which is usually used in a thermosetting resin composition for a semiconductor package, and specific examples include silica, aluminum trihydroxide, magnesium hydroxide, molybdenum oxide, zinc molybdate, zinc borate. , Zinc stanate, alumina, clay, kaolin, talc, calcined kaolin, calcined talc, mica, short glass fibers, glass fine powder, and hollow glass, and may be one or more selected from the group consisting of these.

The thermosetting resin composition for a semiconductor package may include 30 to 300 parts by weight, or 30 to 200 parts by weight, or 50 to 150 parts by weight of an inorganic filler based on 100 parts by weight of the total of the thermosetting resin, the thermoplastic resin and the amine compound. If the content of the inorganic filler is too small, the coefficient of thermal expansion increases, so that warpage during the reflow process is intensified, and the rigidity of the printed circuit board decreases.

In addition, when the surface-treated filler is used, a small size of a nano particle diameter and a large size of a micro particle diameter are used together to increase the packing density, thereby increasing the filling rate.

The inorganic filler may include two or more types of inorganic fillers having different average particle diameters. Specifically, at least one of the two or more inorganic fillers may be an inorganic filler having an average particle diameter of 0.1 μm to 100 μm, and the other type may be an inorganic filler having an average particle diameter of 1 nm to 90 nm.

The content of the inorganic filler having an average particle diameter of 1 nm to 90 nm may be 1 to 30 parts by weight based on 100 parts by weight of the inorganic filler having an average particle diameter of 0.1 µm to 100 µm.

As the inorganic filler, silica surface-treated with a silane coupling agent may be used from the viewpoint of improving moisture resistance and dispersibility.

As a method of surface treatment of the inorganic filler, a method of treating silica particles in a dry or wet manner using a silane coupling agent as a surface treatment agent may be used. For example, the silica may be surface-treated by a wet method using 0.01 to 1 part by weight of a silane coupling agent based on 100 parts by weight of silica particles.

Specifically, examples of the silane coupling agent include 3-aminopropyltriethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, and N-2-(aminoethyl)-3-aminopropyltrimethoxysilane. Aminosilane coupling agent, epoxy silane coupling agent such as 3-glycidoxypropyltrimethoxysilane, vinyl silane coupling agent such as 3-methacryloxypropyl trimethoxysilane, N-2-(N-vinylbenzylaminoethyl) ) A cationic silane coupling agent such as -3-aminopropyltrimethoxysilane hydrochloride and a phenyl silane coupling agent, and the silane coupling agent may be used alone, or a combination of at least two silane coupling agents as necessary. Can be used.

More specifically, the silane compound may include an aromatic amino silane or a (meth)acrylic silane, and an aromatic amino silane-treated silica may be used as the inorganic filler having an average particle diameter of 0.1 μm to 100 μm, and the Silica treated with (meth)acrylic silane may be used as an inorganic filler having an average particle diameter of 1 nm to 90 nm. Specific examples of the aromatic amino silane-treated silica include SC2050MTO (Admantechs), and specific examples of the (meth)acrylsilane-treated silica include AC4130Y (Nissan Chemical). The (meth)acrylic was used in the sense of including both acrylic or methacrylic.

In addition, the thermosetting resin composition for a semiconductor package of the embodiment may be used as a solution by adding a solvent as needed. The type of the solvent is not particularly limited as long as it exhibits good solubility in the resin component, and alcohol, ether, ketone, amide, aromatic hydrocarbon, ester, nitrile, etc. can be used. Alternatively, a mixed solvent used in combination of two or more may be used. In addition, the content of the solvent is not particularly limited as long as the resin composition can be impregnated into the glass fiber when preparing the prepreg.

In addition, the thermosetting resin composition for a semiconductor package may further include various polymer compounds such as other thermosetting resins, thermoplastic resins and oligomers and elastomers thereof, and other flame retardant compounds or additives as long as the properties of the resin composition are not impaired. . These are not particularly limited as long as they are selected from those commonly used. For example, additives include ultraviolet absorbers, antioxidants, photopolymerization initiators, optical brighteners, photosensitizers, pigments, dyes, thickeners, lubricants, defoaming agents, dispersants, There are leveling agents, brightening agents, etc., and it is also possible to mix and use them to suit the purpose.

Meanwhile, according to another embodiment of the present invention, a prepreg including the thermosetting resin composition for the semiconductor package and a fiber substrate may be provided.

The prepreg means that the thermosetting resin composition for a semiconductor package is impregnated into a fibrous substrate in a semi-cured state.

The type of the fiber substrate is not particularly limited, but polyamide resin fibers such as glass fiber substrates, polyamide resin fibers, and aromatic polyamide resin fibers, polyester resin fibers, aromatic polyester resin fibers, and wholly aromatic polyester Synthetic fiber substrates composed of woven or nonwoven fabrics mainly composed of polyester resin fibers such as resin fibers, polyimide resin fibers, polybenzoxazole fibers, fluororesin fibers, etc., kraft paper, cotton linter paper, linter and kraft pulp. A paper substrate or the like containing mixed paper or the like as a main component may be used, and a glass fiber substrate is preferably used. The glass fiber substrate can improve the strength of the prepreg, reduce the water absorption rate, and can reduce the coefficient of thermal expansion.

The glass fiber substrate may be selected from glass substrates used for various printed circuit board materials. Examples of these include, but are not limited to, glass fibers such as E glass, D glass, S glass, T glass, NE glass and L glass, and Q glass. The glass-based material can be selected according to the intended use or performance as needed. The glass substrate type is typically woven, nonwoven, roving, chopped strand mat or surfacing mat. The thickness of the glass substrate is not particularly limited, but may be about 0.01 to 0.3mm or the like. Among the above materials, glass fiber materials are more preferred in terms of strength and moisture absorption properties.

In addition, a method of manufacturing the prepreg is not particularly limited, and may be manufactured by a method well known in the art. For example, the preparation method of the prepreg may use an impregnation method, a coating method using various coaters, a spray spray method, or the like.

In the case of the impregnation method, after preparing a varnish, a prepreg may be manufactured by impregnating the fibrous substrate into the varnish.

That is, the production conditions of the prepreg and the like are not particularly limited, but it is preferably used in a varnish state in which a solvent is added to the thermosetting resin composition for a semiconductor package. The solvent for resin varnish is not particularly limited as long as it can be mixed with the resin component and has good solubility. Specific examples thereof include ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone and cyclohexanone, aromatic hydrocarbons such as benzene, toluene and xylene, and amides such as dimethylformamide and dimethylacetamide, methylcello Aliphatic alcohols such as Solve and Butyl Cellosolve.

In addition, when preparing the prepreg, it is preferable that the used solvent volatilizes at least 80% by weight. For this reason, the manufacturing method, drying conditions, and the like are also not limited, the temperature during drying is about 80°C to 200°C, and the time is not particularly limited in balance with the gelation time of the varnish. In addition, the impregnation amount of the varnish is preferably such that the resin solid content of the varnish is about 30 to 80% by weight based on the total amount of the resin solid content and the base material of the varnish.

In addition, according to another embodiment of the invention, the prepreg described above having a sheet shape; And a metal foil formed on at least one surface of the prepreg.

The metal foil is copper foil; Aluminum foil; A composite foil having a three-layer structure including nickel, nickel-phosphorus, nickel-tin alloy, nickel-iron alloy, lead or lead-tin alloy as an intermediate layer, and copper layers having different thicknesses on both sides thereof; Or, it includes a composite foil of a two-layer structure in which aluminum and copper foil are combined.

According to a preferred embodiment, copper foil or aluminum foil may be used as the metal foil, and one having a thickness of about 2 to 200 μm may be used, but it is preferable that the thickness is about 2 to 35 μm. Preferably, copper foil is used as the metal foil. In addition, as the metal foil, nickel, nickel-phosphorus, nickel-tin alloy, nickel-iron alloy, lead, or lead-tin alloy is used as an intermediate layer, and a copper layer of 0.5 to 15 µm and a copper layer of 10 to 300 µm on both sides thereof A three-layer composite foil provided with a copper layer or a two-layer composite foil obtained by combining aluminum and copper foil can also be used.

After laminating one or more metal laminates including the prepreg thus prepared, it can be used for manufacturing a double-sided or multilayer printed circuit board. The metal foil laminate may be circuit-processed to manufacture a double-sided or multilayer printed circuit board, and the circuit processing may be performed using a method performed in a general double-sided or multi-layer printed circuit board manufacturing process.

According to the present invention, a thermosetting resin composition for a semiconductor package capable of securing excellent flowability, realizing a low glass transition temperature and modulus, and a low coefficient of thermal expansion, and minimizing warpage, and the semiconductor package A prepreg provided by using the thermosetting resin composition and a metal foil laminate including the prepreg may be provided.

The invention will be described in more detail in the following examples. However, the following examples are merely illustrative of the present invention, and the contents of the present invention are not limited by the following examples.

<Examples and Comparative Examples: Thermosetting resin composition for semiconductor package, prepreg, and copper clad laminate>

(1) Preparation of thermosetting resin composition for semiconductor package

According to the composition of Table 1 and Table 2 below, each component was added to methyl ethyl ketone in accordance with 40% solid content and mixed, and then stirred at room temperature for one day at a speed of 400 rpm to form the resin composition for semiconductor packages of Examples and Comparative Examples (resin Varnish) was prepared. Specifically, the specific composition of the resin composition prepared in the above Example is as described in Table 1, and the specific composition of the resin composition prepared in the Comparative Example is as described in Table 2 below.

(2) Preparation of prepreg and copper clad laminate

After impregnating the prepared resin composition (resin varnish) for a semiconductor package in a 13 μm-thick glass fiber (manufactured by Nittobo, T-glass #1010), hot air drying at 170° C. for 2 to 5 minutes, Prepreg was prepared.

After stacking the two prepregs prepared above, copper foil (thickness 12 μm, manufactured by Mitsui) was placed on both sides of the sheet, and then cured at 220° C. and 35 kg/cm 2 for 100 minutes to prepare a copper clad laminate. I did.

<Experimental Example: Measurement of physical properties of thermosetting resin compositions for semiconductor packages, prepregs, and copper clad laminates obtained in Examples and Comparative Examples>

Physical properties of the thermosetting resin composition for semiconductor package, prepreg, and copper clad laminate obtained in the above Examples and Comparative Examples were measured by the following method, and the results are shown in Table 3.

1. Coefficient of thermal expansion (CTE)

After removing the copper foil layer of the copper clad laminate obtained in the above Examples and Comparative Examples by etching, a test piece was prepared in the MD direction, and using TMA (TA Instruments, Q400), from 30° C. to 260° C., a heating rate of 10° C./ After measurement under the min condition, the measured value in the range of 50°C to 150°C was recorded as the coefficient of thermal expansion.

2. Glass transition temperature (Tg)

After removing the copper foil layer of the copper clad laminate obtained in the above Examples and Comparative Examples by etching, a test piece was prepared in the MD direction, and a temperature increase condition of 5°C/min at 5°C/min using DMA (TA Instruments, Q800) was used. It was measured from to 300°C, and the peak temperature of tan delta was taken as the glass transition temperature.

3. Measurement of storage modulus (Storage Modulus)

After removing the copper foil layer of the copper clad laminate obtained in the above Examples and Comparative Examples by etching, a test piece was prepared in the MD direction, and a temperature increase condition of 5°C/min at 5°C/min using DMA (TA Instruments, Q800) was used. Storage modulus was measured from to 300°C.

4. Circuit pattern fillability

The prepreg obtained in Examples and Comparative Examples was placed on both sides of a circuit pattern (pattern height 7 um, residual ratio 50%), and copper foil (thickness 12 µm, manufactured by Mitsui) was placed thereon, at 220° C. and 35 After pressing for 100 minutes under the condition of kg/cm 2, copper foils on both sides were etched, and the circuit pattern filling property was evaluated under the following criteria.

○: No void occurrence

X: Void generation

5. Tensile Elongation Measurement

15 sheets of the prepreg obtained in Examples and Comparative Examples were stacked so that the MD and TD directions of the glass fibers coincide, and pressed for 100 minutes at 220°C and 35 kg/cm 2 18.3), the tensile elongation in the MD direction was measured using a Universal Testing Machine (Instron 3365).

6. Warpage of semiconductor package (Warpage measurement)

In the copper clad laminates obtained in the above Examples and Comparative Examples, a part of the copper foil was wired through a conventional etching method to manufacture a printed wiring board (thickness: 90 μm). A semiconductor package (14.5mm x 14.5mm x thickness 390um) was manufactured by mounting a semiconductor chip (11.5mm x 11.5mm x 80um thickness) on the manufactured printed wiring board. For the manufactured semiconductor package, warpage was measured based on the Shadow Moire measurement theory using a warpage measuring device (THERMOIRE PS100 manufactured by AKROMETRIX). Warpage was measured from 30° C. to 260° C. for the semiconductor package, and then when cooled to 30° C., the warpage was calculated as the difference between the maximum and minimum warpage values, and warpage of the semiconductor package was evaluated under the following criteria.

○: The difference between the maximum and minimum values of warpage is 170um or less

X: The difference between the maximum and minimum values of warpage is 170um or more

7. Thermal Stress Factor Calculation

Based on the obtained coefficient of thermal expansion and storage modulus, multiply the coefficient of thermal expansion and the storage modulus at each temperature in 1°C increments from 30°C to 260°C, and then add them together to measure the thermal stress factor of General Formula 1 below. (Calculated).

[General Formula 1]

Thermal Stress Factor (Unit: MPa)

=∫[Storage Modulus * Coefficient of thermal expansion] dT

Confirmation of the composition of the thermosetting resin composition for semiconductor package of the embodiment and the physical properties of the prepreg (unit: g) Example 1 Example 2 Example 3 Example 4 Epoxy resin XD-1000
(Epoxy equivalent 253 g/eq) 0 0 14 0 NC-3000H
(Epoxy equivalent 290 g/eq) 46.1 39.48 33.5 12 HP-6000
(Epoxy equivalent 250 g/eq) 24 Bismaleimide BMI-2300
(Maleimide equivalent 179g/eq) 4.3 3.72 4.3 3.72 Diamine compound DDS
(Active hydrogen equivalent 62g/eq) 19.6 16.8 18.2 10.14 TFB
(Active hydrogen equivalent 80g/eq) 10.14 DDM
(Active hydrogen equivalent 49.5g/eq) Thermoplastic resin Acrylic rubber B (KG-3015P, Mw 80 only) 30 30 Acrylic rubber C (KG-3113, Mw 60 only) 40 40 Inorganic filler SC2050MTO 70 90 108 135 AC4130Y 0 10 12 15 Equivalent ratio (diamine/epoxy) 1.73 1.73 1.51 1.84 Tg ℃ 212 209 221 197 CTE ppm/℃ 9.1 8.5 8.1 7.8 Circuit pattern fillability ○ ○ ○ ○ Storage modulus
(Storage Modulus) 30℃ Gpa 13.1 14.5 15.1 15.4 180℃ Gpa 9.7 11.2 11.6 11.8 260℃ Gpa 6.4 6.6 6.8 6.4 Tensile elongation
(Elongation) % 4.1 3.9 3.8 3.6 TSF Mpa 17.3 20.4 20.4 20.2 Warpage um ○ ○ ○ ○

Confirmation of the composition of the thermosetting resin composition for semiconductor package of the comparative example and the physical properties of the prepreg (unit: g) Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Epoxy
Suzy XD-1000
(Epoxy equivalent 253 g/eq) 14.0 0 0 NC-3000H
(Epoxy equivalent 290 g/eq) 65.8 65.8 65.8 HP-6000
(Epoxy equivalent 250 g/eq) 28.0 Bismaleimide BMI-2300
(Maleimide equivalent 179g/eq) 6.2 16.8 6.2 6.2 Hardener DDS
(Active hydrogen equivalent 62g/eq) 11.2 28 28 TFB
(Active hydrogen equivalent 80g/eq) DDM
(Active hydrogen equivalent 49.5g/eq) 28 Thermoplastic resin Acrylic rubber B (KG-3015P, Mw 80 only) 30 Acrylic rubber C (KG-3113, Mw 60 only) Inorganic filler SC2050MTO 260 135 260 135 AC4130Y 0 15 0 15 Equivalent ratio (diamine/epoxy) 2.16 0.69 1.73 1.73 Tg ℃ 195 289 213 215 CTE ppm/℃ 9.8 7.8 9.6 11.6 Circuit pattern fillability X ○ ○ ○ Storage modulus
(Storage Modulus) 30℃ Gpa 21.7 16.1 21.3 18.3 180℃ Gpa 18.2 15 19.2 16.6 260℃ Gpa 7.9 13.1 8.1 7 Tensile elongation
(Elongation) % 2.4 3.1 2.6 3 TSF Mpa 40.3 28.5 39.6 41.2 Warpage um Substrate manufacturing impossible due to poor formability X X X

* DDS: 4,4'-diaminodiphenyl sulfone

* TFB: 2,2`-bis(trifluoromethyl)benzidine; 2,2'-Bis(trifluoromethyl)-4,4'-biphenyldiamine

* DDM: 4,4'-diaminodiphenyl methane

* XD-1000: Epoxy resin (Nippon kayaku)

* NC-3000H: Epoxy resin (Nippon kayaku)

* HP-6000: Epoxy resin (DIC)

* BMI-2300: Bismaleimide resin (DAIWA KASEI)

* Acrylic rubber B(Mw 800,000): PARACRON KG-3015P (Negami chemical industrial Co., Ltd.)

* Acrylic rubber C (Mw 600,000): PARACRON KG-3113 (Negami chemical industrial Co., Ltd.)

* Equivalent ratio: calculated through Equation 1 below

[Equation 1]

Equivalent ratio of amine compound to thermosetting resin

= (Total active hydrogen equivalent of DDS + total active hydrogen equivalent of TFB + total active hydrogen equivalent of DDM) / ((total epoxy equivalent of XD-1000 + total epoxy equivalent of NC-3000H + total epoxy equivalent of HP-6000) + (Total maleimide equivalent of BMI-2300)}

In Equation 1, the total active hydrogen equivalent of DDS is a value obtained by dividing the total weight (g) of DDS by the active hydrogen unit equivalent of DDS (62 g/eq),

The total active hydrogen equivalent of TFB is a value obtained by dividing the total weight (g) of TFB by the active hydrogen unit equivalent of TFB (80g/eq),

The total active hydrogen equivalent of DDM is a value obtained by dividing the total weight (g) of DDM by the unit equivalent of active hydrogen of DDM (49.5 g/eq),

The total epoxy equivalent of XD-1000 is a value obtained by dividing the total weight (g) of XD-1000 by the epoxy unit equivalent of XD-1000 (253g/eq),

The total epoxy equivalent of NC-3000H is the value obtained by dividing the total weight (g) of NC-3000H by the unit equivalent of epoxy (290g/eq) of NC-3000H,

The total epoxy equivalent of HP-6000 is a value obtained by dividing the total weight (g) of HP-6000 by the unit equivalent of epoxy (250 g/eq) of HP-6000,

The total maleimide equivalent of BMI-2300 is a value obtained by dividing the total weight (g) of BMI-2300 by the maleimide unit equivalent (179 g/eq) of BMI-2300.

As shown in Table 1, the prepreg including the amine compound having electron withdrawing group (EWG) as in Example has a glass transition temperature of 230°C or less, and a low thermal expansion coefficient of 10 ppm/°C. In addition, it was confirmed that it has excellent circuit pattern filling properties.

That is, as in the Example, it includes a thermosetting resin of 290 parts by weight or less relative to 100 parts by weight of an amine compound having an electron withdrawing group (EWG), and the equivalent ratio, which is the equivalent ratio of the amine compound based on the equivalent of the thermosetting resin, satisfies 1.4 or more. , When the addition amount of the inorganic additive contains 150 parts by weight of inorganic additives at 50 parts by weight to 100 parts by weight of the total amount of the thermosetting resin, thermoplastic resin and amine compound, the thermal properties bonded to the semiconductor packaging, excellent low thermal expansion properties, flowability and mechanical properties It was confirmed that physical properties can be secured.

On the other hand, it is confirmed that the thermal stress factor for each prepreg obtained in the examples is 21 Mpa or less, and a semiconductor package manufactured using a prepreg having such a thermal stress factor has a relatively low level of warpage. It was found to represent only. On the other hand, it was confirmed that the thermal stress factor for each prepreg obtained in the comparative examples was greater than 25 Mpa, and that a semiconductor package manufactured using the prepreg having such a high thermal stress factor had relatively high warpage. .

Claims (17)

Sulfonic; Carbonyl group; Halogen group; An alkyl group having 1 to 20 carbon atoms unsubstituted or substituted with a nitro group, a cyano group, or a halogen group; An aryl group having 6 to 20 carbon atoms unsubstituted or substituted with a nitro group, a cyano group, or a halogen group; A heteroaryl group having 2 to 30 carbon atoms unsubstituted or substituted with a nitro group, a cyano group, or a halogen group; And an alkylene group having 1 to 20 carbon atoms substituted or unsubstituted with a nitro group, a cyano group, or a halogen group; an amine compound containing at least one functional group selected from the group consisting of,
Thermosetting resin,
Thermoplastic resin, and
Containing inorganic fillers,
Has a glass transition temperature of 230° C. or less,
180 parts by weight to 300 parts by weight of the thermosetting resin relative to 100 parts by weight of the amine compound,
The thermoplastic resin contains a (meth)acrylate-based polymer,
The equivalent ratio calculated by the following Equation 1 is 1.45 to 2.1, a thermosetting resin composition for a semiconductor package:
[Equation 1]
Equivalent ratio = total active hydrogen equivalent contained in the amine compound / total curable functional group equivalent contained in the thermosetting resin.
delete delete The method of claim 1,
The amine compound comprises an aromatic amine compound containing 2 to 5 amine groups, a thermosetting resin composition for a semiconductor package.
The method of claim 1,
The thermosetting resin composition for a semiconductor package comprises 50 parts by weight to 150 parts by weight of the inorganic filler based on a total of 100 parts by weight of the thermosetting resin, a thermoplastic resin, and an amine compound.
The method of claim 1,
The thermosetting resin composition for a semiconductor package has a thermal expansion coefficient of 12 ppm/°C or less after curing, a thermosetting resin composition for a semiconductor package.
The method of claim 1,
Storage modulus at 30° C. and 180° C. measured after curing of the thermosetting resin composition for a semiconductor package is 16 Gpa or less, respectively.
The method of claim 7,
The thermosetting resin composition for semiconductor packages having a storage modulus of 8 Gpa or less at 260° C. measured after curing of the thermosetting resin composition for semiconductor packages.
The method of claim 1,
The thermosetting resin is bisphenol A type epoxy resin, phenol novolac epoxy resin, tetraphenyl ethane epoxy resin, naphthalene epoxy resin, biphenyl epoxy resin, dicyclopentadiene epoxy resin, and dicyclopentadiene epoxy resin and naphthalene. A thermosetting resin composition for a semiconductor package comprising at least one epoxy resin selected from the group consisting of a mixture of epoxy resins.
The method of claim 9,
The thermosetting resin further comprises at least one resin selected from the group consisting of a bismaleimide resin, a cyanate ester resin, and a bismaleimide-triazine resin, a thermosetting resin composition for a semiconductor package.
The method of claim 1,
A thermosetting resin composition for a semiconductor package further comprising at least one curing agent selected from the group consisting of a second amine compound different from the amine compound, an acid anhydride resin, a phenol novolak resin, and a benzoxazine resin.
delete The method of claim 1,
The (meth)acrylate-based polymer is an acrylic acid ester copolymer containing a repeating unit derived from a (meth)acrylate monomer and a repeating unit derived from (meth)acrylonitrile; Or an acrylic acid ester copolymer containing a repeating unit derived from butadiene, a thermosetting resin composition for a semiconductor package.
The method of claim 1,
The (meth)acrylate-based polymer has a weight average molecular weight of 500,000 to 1,000,000, a thermosetting resin composition for a semiconductor package.
The method of claim 1,
The inorganic filler may include two or more types of inorganic fillers having different average particle diameters,
At least one of the two or more inorganic fillers is an inorganic filler having an average particle diameter of 0.1 μm to 100 μm, and the other one is an inorganic filler having an average particle diameter of 1 nm to 90 nm, a thermosetting resin composition for a semiconductor package.
A prepreg comprising the thermosetting resin composition for a semiconductor package of claim 1 and a fiber base material.
The prepreg of claim 16 having a sheet shape; And a metal foil formed on at least one surface of the prepreg.