KR102195081B1 - 지문인식 센서 패키지 - Google Patents
지문인식 센서 패키지 Download PDFInfo
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- KR102195081B1 KR102195081B1 KR1020190028285A KR20190028285A KR102195081B1 KR 102195081 B1 KR102195081 B1 KR 102195081B1 KR 1020190028285 A KR1020190028285 A KR 1020190028285A KR 20190028285 A KR20190028285 A KR 20190028285A KR 102195081 B1 KR102195081 B1 KR 102195081B1
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- 239000000758 substrate Substances 0.000 claims abstract description 59
- 230000005540 biological transmission Effects 0.000 claims abstract description 34
- 239000010410 layer Substances 0.000 claims description 72
- 238000009792 diffusion process Methods 0.000 claims description 58
- 230000000903 blocking effect Effects 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 35
- 239000011241 protective layer Substances 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 8
- 239000000945 filler Substances 0.000 claims description 7
- 229920003023 plastic Polymers 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000005137 deposition process Methods 0.000 claims description 4
- 239000000088 plastic resin Substances 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000000463 material Substances 0.000 description 14
- 230000001965 increasing effect Effects 0.000 description 7
- 238000000465 moulding Methods 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 239000002313 adhesive film Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- FZCCRONMPSHDPF-UHFFFAOYSA-N 2,6-dichloro-4-(3,4,5-trichlorophenyl)phenol Chemical compound C1=C(Cl)C(O)=C(Cl)C=C1C1=CC(Cl)=C(Cl)C(Cl)=C1 FZCCRONMPSHDPF-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920006336 epoxy molding compound Polymers 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910009815 Ti3O5 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 210000000554 iris Anatomy 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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Classifications
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- H01L27/14678—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/198—Contact-type image sensors [CIS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H01L27/14623—
-
- H01L27/14629—
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- H01L27/14685—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Image Input (AREA)
- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
Abstract
Description
도 2 및 도 3은 각각 본 발명의 다른 실시예에 따른 지문인식 센서 패키지의 단면도이다.
20: 지문인식 센서 모듈 21: 하부 기판
22: 지문인식 센서 23: 몰딩부
30: 발광소자 40: 제1 반사층,
50: 광 확산부 60: 차광부
70: 보호막 80: 반사벽
90: 제2 반사층 100: 충진재
AR1, AR11: 투과 영역 AR2, AR12: 차광 영역
Claims (18)
- 베이스 기판;
상기 베이스 기판 상에 위치하는 지문인식 센서 모듈;
상기 지문인식 센서 모듈의 상면 및 측면에 위치하는 제1 반사층;
상기 베이스 기판 위에 위치하는 발광소자; 및
상기 지문인식 센서 모듈과 상기 발광소자 위에 위치하고 투과 영역과 차광 영역을 구비하는 차광부
를 포함하는 지문인식 센서 패키지. - 제1 항에 있어서,
상기 제1 반사층은 상기 베이스 기판 위에 추가로 위치하는 지문인식 센서 패키지. - 제1 항 또는 제2 항에 있어서,
상기 제1 반사층은 비전도 증착(non-conductive vacuum metallization, NCVM) 공정이나 비전도 광학 코팅(non-conductive optical coating, NCOC) 공정으로 형성된 지문인식 센서 패키지. - 제1 항에 있어서,
상기 제1 반사층과 상기 차광부 사이 그리고 상기 발광소자와 상기 차광부 사이에 위치하는 광 확산부를 더 포함하는 지문인식 센서 패키지. - 제4 항에 있어서,
상기 광 확산부는 광 확산 수지나 광 확산 에폭시로 이루어져 있는 지문인식 센서 패키지. - 제4 항에 있어서,
상기 광 확산부는 위치에 무관하게 동일한 높이의 상면을 갖는 지문인식 센서 패키지. - 제4 항에 있어서,
상기 차광부 위에 위치하는 보호막을 더 포함하는 지문인식 센서 패키지. - 제7 항에 있어서,
상기 보호막은 상기 차광 영역 위에 위치하는 지문인식 센서 패키지. - 제7 항에 있어서,
상기 보호막은 상기 투과 영역 내에 추가로 위치하는 지문인식 센서 패키지. - 제7 항에 있어서,
상기 보호막은 상기 투과 영역 위에 추가로 위치하는 지문인식 센서 패키지. - 제10 항에 있어서,
상기 보호막과 상기 광 확산부 사이에는 상기 광 확산부로 채워지지 않는 빈 공간인 공기층이 위치하는 지문인식 센서 패키지. - 제11 항에 있어서,
상기 공기층 내에 위치하는 충진재를 더 포함하는 지문인식 센서 패키지. - 제12 항에 있어서,
상기 충진재는 투명한 플라스틱 수지로 채워져 있는 지문인식 센서 패키지. - 제7 항에 있어서,
상기 보호막은 투명한 플라스틱이나 유리로 이루어져 있는 지문인식 센서 패키지. - 제4 항에 있어서,
상기 베이스 기판 및 상기 광 확산부 측면에 위치하는 반사벽을 더 포함하는 지문인식 센서 패키지. - 제4 항에 있어서,
상기 광 확산부와 상기 차광부 사이에 위치한 제2 반사층을 더 포함하는 지문인식 센서 패키지. - 제16 항에 있어서,
상기 제2 반사층은 상기 차광부의 투과 영역과 중첩하는 개구 영역을 포함하는 지문인식 센서 패키지. - 제16 항에 있어서,
상기 제2 반사층은 비전도 증착 공정이나 비전도 광학 코팅 공정으로 형성된 지문인식 센서 패키지.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020190028285A KR102195081B1 (ko) | 2019-03-12 | 2019-03-12 | 지문인식 센서 패키지 |
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KR1020190028285A KR102195081B1 (ko) | 2019-03-12 | 2019-03-12 | 지문인식 센서 패키지 |
Publications (2)
Publication Number | Publication Date |
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KR20200109146A KR20200109146A (ko) | 2020-09-22 |
KR102195081B1 true KR102195081B1 (ko) | 2020-12-24 |
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KR1020190028285A Expired - Fee Related KR102195081B1 (ko) | 2019-03-12 | 2019-03-12 | 지문인식 센서 패키지 |
Country Status (1)
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KR (1) | KR102195081B1 (ko) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6259108B1 (en) * | 1998-10-09 | 2001-07-10 | Kinetic Sciences Inc. | Fingerprint image optical input apparatus |
US8605960B2 (en) | 2009-03-02 | 2013-12-10 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Fingerprint sensing device |
KR101809437B1 (ko) * | 2016-02-15 | 2017-12-15 | 크루셜텍 (주) | 센서 패키지 |
KR20170104314A (ko) | 2016-03-07 | 2017-09-15 | 주식회사 아모센스 | 지문 감지 센서 |
KR20180062976A (ko) * | 2016-10-25 | 2018-06-11 | 선전 구딕스 테크놀로지 컴퍼니, 리미티드 | 센서 장치 및 이동 단말기 |
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2019
- 2019-03-12 KR KR1020190028285A patent/KR102195081B1/ko not_active Expired - Fee Related
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