KR102179621B1 - Method for manufacturing component-embedded wiring substrate and semiconductor device - Google Patents

Abstract

[Problem] Provided is a method of manufacturing a component-embedded wiring board capable of suppressing substrate warpage and suppressing positional change (displacement) of components in a cavity, thereby realizing excellent component placement accuracy.
[Solution means] A method for manufacturing a component-embedded wiring board comprising the following steps (A), (B), (C) and (D) in this order:
(A) a first comprising a first support and a first thermosetting resin composition layer bonded to the first support on an inner-layer substrate having first and second main surfaces and having a cavity penetrating between the first and second main surfaces 1 Step of vacuum laminating the adhesive film so that the first thermosetting resin composition layer is bonded to the first main surface of the inner substrate
(B) Process of temporarily attaching parts to the first thermosetting resin composition layer in the cavity
(C) a second adhesive film comprising a second support and a second thermosetting resin composition layer bonded to the second support on the second main surface of the inner substrate, and the second thermosetting resin composition layer is the second main surface of the inner substrate As a process of vacuum laminating so as to bond with, the process of vacuum laminating under conditions where the heating temperature of the first adhesive film surface is lower than the heating temperature of the second adhesive film surface
(D) Step of forming an insulating layer by thermosetting the first and second thermosetting resin composition layers.

Description

A manufacturing method of a component-embedded wiring board, and a semiconductor device TECHNICAL FIELD [METHOD FOR MANUFACTURING COMPONENT-EMBEDDED WIRING SUBSTRATE AND SEMICONDUCTOR DEVICE]

The present invention relates to a method of manufacturing a component-embedded wiring board and a semiconductor device.

Recently, the demand for small, high-function electronic devices such as smart phones and tablet PCs is increasing. Accordingly, there is a demand for further higher functionality and miniaturization of printed wiring boards used in such small, high-performance electronic devices.

Components such as bare chips, chip capacitors, and chip inductors are mounted on the printed wiring board. Conventionally, such components have been mounted only on the surface circuit of a printed wiring board, but the mounting amount is limited, and it has been difficult to meet the demands for further higher functionality and miniaturization of the recent printed wiring board.

In order to cope with such a problem, a component-embedded wiring board has been proposed as a printed wiring board capable of miniaturization while increasing the mounting amount of components (Patent Document 1).

Japanese Patent Laid-Open Publication No. 2011-216636

The component-embedded wiring board can be manufactured in accordance with the following procedures (i) to (v) using, for example, an inner layer board in which a cavity for accommodating components is formed. In addition, when manufacturing a component-embedded wiring board, it is common to use a circuit board as an inner layer board. (i) A temporary attachment material for temporarily attaching components is laminated on one main surface of the inner-layer substrate on which the cavity is formed. (ii) Temporarily attach the part to the adhesive surface of the exposed temporary adhesive material through the cavity. (iii) An insulating layer is formed by installing a thermosetting resin composition layer on the other main surface of the inner-layer substrate on which components are temporarily attached in the cavity, and heat curing. (iv) After peeling off the temporary attachment material, a thermosetting resin composition layer is provided on one main surface of the exposed inner-layer substrate and thermally cured to form an insulating layer. After that, (v) a conductor layer (circuit wiring) is provided.

In order to further reduce the size and weight of electronic devices, it is desired to reduce the size and thickness of the component-embedded wiring board itself. However, in the case of using an inner layer substrate with high cavity density or a thin inner layer substrate to achieve miniaturization and thickness reduction of the component-embedded wiring board itself, the step of forming an insulating layer on one main surface of the inner layer substrate ((iii) After)), the present inventors have found that there is a case where the inner-layer substrate curls (hereinafter, also referred to as "substrate warpage") with the surface on which the insulating layer is installed as the inner peripheral side. When a substrate warp occurs, it causes a problem in substrate transport, resulting in a decrease in manufacturing efficiency (manufacturing yield).

In addition, miniaturization of components to be embedded and micro-wiring of circuits are also progressing, and the demand for the precision of arranging components in the cavity of the inner layer substrate is increasing.

An object of the present invention is to provide a method for manufacturing a component-embedded wiring board capable of suppressing substrate warpage and suppressing positional change (displacement) of components in a cavity, thereby realizing excellent component placement accuracy.

As a result of earnestly examining the above-described problems, the inventors of the present invention have found that the above-mentioned problems can be solved by manufacturing a component-embedded wiring board by the following specific method, and the present invention has been completed.

That is, the present invention includes the following contents.

[1] A method for manufacturing a component-embedded wiring board comprising the following steps (A), (B), (C) and (D) in this order:

(A) a first comprising a first support and a first thermosetting resin composition layer bonded to the first support on an inner-layer substrate having first and second main surfaces and having a cavity penetrating between the first and second main surfaces 1 Step of vacuum laminating the adhesive film so that the first thermosetting resin composition layer is bonded to the first main surface of the inner substrate

(B) Process of temporarily attaching parts to the first thermosetting resin composition layer in the cavity

(C) a second adhesive film comprising a second support and a second thermosetting resin composition layer bonded to the second support on the second main surface of the inner substrate, and the second thermosetting resin composition layer is the second main surface of the inner substrate As a process of vacuum laminating so as to bond with, the process of vacuum laminating under conditions where the heating temperature of the surface of the first adhesive film is lower than the heating temperature of the surface of the second adhesive film

(D) Step of forming an insulating layer by thermosetting the first and second thermosetting resin composition layers.

[2] The method described in [1], wherein the inner layer substrate is a circuit board (hereinafter, also referred to as "the method of the first embodiment").

[3] The method described in [1], wherein the inner layer substrate is an insulating substrate (hereinafter, also referred to as "the method of the second embodiment").

[4] The method according to [3], wherein the insulating substrate is a cured prepreg, a glass substrate, or a ceramic substrate.

[5] In the step (C), when the heating temperature of the first adhesive film surface is T ₁ (°C) and the heating temperature of the second adhesive film surface is T ₂ (°C), T ₁ and T ₂ are, method according to any one of T ₂ -40≤T _{1, [1]} to [4] which satisfy the relationship of ≤T _2-10.

[6] The method according to any one of [1] to [5], wherein the second thermosetting resin composition layer is thicker than the first thermosetting resin composition layer.

[7] In step (A), the height (h _A ) of the cavity of the inner layer substrate before vacuum lamination of the first adhesive film and the height of the non-resin filling region of the cavity of the inner layer substrate after vacuum lamination of the first adhesive film The method according to any one of [1] to [6], wherein (h _B ) satisfies the relationship of 0.8h _A ≤ h _B ≤ h _A.

[8] The method according to any one of [1] to [7], in which the melt viscosity of the first thermosetting resin composition layer in the step (C) is 2000 poise or more.

[9] In any one of [1] to [8], including a step of smoothing both surfaces of the first adhesive film side and the second adhesive film side by a hot press between the step (C) and the step (D). Described method.

[10] In the step (D), the method according to any one of [1] to [9], wherein the first and second supports are thermally cured while being attached.

[11] The method according to any one of [2], [5] to [10], wherein the thickness of the circuit board is 50 to 350 µm.

[12] The method according to any one of [3] to [10], wherein the thickness of the insulating substrate is 30 to 350 µm.

[13] The method according to any one of [1] to [12], wherein the pitch between the cavities is 1 to 10 mm.

[14] The method according to any one of [1] to [13], wherein the content of the inorganic filler in the first thermosetting resin composition layer is 50% by mass or more.

[15] The method according to any one of [1] to [14], wherein the substrate obtained in the step (B) has a warpage of 25 mm or less.

[16] (E) The method according to any one of [1] to [15], further including a step of drilling.

[17] (F) The method according to any one of [1] to [16], further comprising a step of forming a conductor layer on the insulating layer.

[18] Step (F),

Roughening the insulating layer, and

The method according to [17], comprising forming a conductor layer by plating on the roughened insulating layer.

[19] an insulating substrate having first and second main surfaces and having a cavity penetrating between the first and second main surfaces;

A first insulating layer bonded to the first main surface of the insulating substrate,

A second insulating layer bonded to the second main surface of the insulating substrate,

Includes a component installed on the first insulating layer so as to be accommodated in the interior of the cavity of the insulating substrate,

A component-embedded insulating substrate in which the second insulating layer fills the cavity of the insulating substrate so as to fill the component.

[20] first and second conductor layers,

The component-embedded insulating substrate according to [19] bonded to the first and second conductor layers and provided between the first and second conductor layers;

An interlayer connection body electrically connecting the first and second conductor layers,

A component-embedded two-layer wiring board containing.

[21] The component-embedded two-layer wiring board according to [20], wherein the first and second conductor layers are formed by plating.

[22] A semiconductor device comprising a component-embedded wiring board manufactured by the method according to any one of [1] to [18].

Advantageous Effects of Invention According to the present invention, it is possible to provide a manufacturing method of a component-embedded wiring board capable of suppressing substrate warpage and suppressing positional change (displacement) of components in a cavity, thereby realizing excellent component placement accuracy.

1A is a schematic diagram (1) showing a procedure for preparing a circuit board with a cavity used in the method of the first embodiment of the present invention.
1B is a schematic diagram (2) showing a procedure for preparing a circuit board with a cavity used in the method of the first embodiment of the present invention.
2A is a schematic diagram (1) showing a procedure for preparing an insulating substrate with a cavity used in the method of the second embodiment of the present invention.
2B is a schematic diagram (2) showing a procedure for preparing an insulating substrate with a cavity used in the method of the second embodiment of the present invention.
3 is a schematic diagram showing an embodiment of the first adhesive film used in the manufacturing method of the component-embedded wiring board of the present invention.
4A is a schematic diagram (1) for explaining the method of the first embodiment of the present invention.
4B is a schematic diagram (2) for explaining the method of the first embodiment of the present invention.
4C is a schematic diagram (3) for explaining the method of the first embodiment of the present invention.
4D is a schematic diagram (4) for explaining the method of the first embodiment of the present invention.
4E is a schematic diagram (5) for explaining the method of the first embodiment of the present invention.
Fig. 4F is a schematic diagram (6) for explaining the method of the first embodiment of the present invention.
4G is a schematic diagram (7) for explaining the method of the first embodiment of the present invention.
5A is a schematic diagram (1) for explaining a method of a second embodiment of the present invention.
5B is a schematic diagram (2) for explaining the method of the second embodiment of the present invention.
5C is a schematic diagram (3) for explaining the method of the second embodiment of the present invention.
5D is a schematic diagram (4) for explaining the method of the second embodiment of the present invention.
5E is a schematic diagram (5) for explaining the method of the second embodiment of the present invention.
5F is a schematic diagram (6) for explaining the method of the second embodiment of the present invention.
5G is a schematic diagram (7) for explaining the method of the second embodiment of the present invention.
6 is a schematic diagram for explaining a method of evaluating substrate warpage.

[Manufacturing method of wiring board with embedded parts]

The manufacturing method of the component-embedded wiring board of this invention includes the following steps (A), (B), (C), and (D) in this order.

(A) a first comprising a first support and a first thermosetting resin composition layer bonded to the first support on an inner-layer substrate having first and second main surfaces and having a cavity penetrating between the first and second main surfaces 1 Step of vacuum laminating the adhesive film so that the first thermosetting resin composition layer is bonded to the first main surface of the inner substrate

(B) Process of temporarily attaching parts to the first thermosetting resin composition layer in the cavity

(C) a second adhesive film comprising a second support and a second thermosetting resin composition layer bonded to the second support on the second main surface of the inner substrate, and the second thermosetting resin composition layer is the second main surface of the inner substrate As a process of vacuum laminating so as to bond with, the process of vacuum laminating under conditions where the heating temperature of the surface of the first adhesive film is lower than the heating temperature of the surface of the second adhesive film

(D) Step of forming an insulating layer by thermosetting the first and second thermosetting resin composition layers.

In addition, in the present invention, the "include in this order" refers to the steps (A) to (D), including each step of the steps (A) to (D), and of the steps (A) to (D). As long as each process is performed in this order, it does not preclude the inclusion of other processes.

Hereinafter, the same applies to "included in this order" referring to a process or treatment.

When manufacturing a component-embedded wiring board, a circuit board is generally used as the inner layer board. Therefore, in the method of the first embodiment of the present invention, the inner layer substrate is a circuit board ("circuit board" will be described later). Hereinafter, the component-embedded wiring board obtained by the method of the first embodiment is also referred to as a "component embedded circuit board".

The present invention is also applicable to an embodiment in which an insulating substrate is used as the inner layer substrate. Therefore, in the method of the second embodiment of the present invention, the inner layer substrate is an insulating substrate (a "insulation substrate" will be described later). Hereinafter, the component-embedded wiring board obtained by the method of the second embodiment is also referred to as a "component embedded substrate".

Before explaining in detail the methods of the first and second embodiments of the present invention, "circuit board with cavity", "insulation substrate with cavity" and "adhesive film" used in the method of the present invention Explain about.

<Circuit board with cavity>

The circuit board on which the cavity used in the method of the first embodiment of the present invention is formed has first and second main surfaces, and is a circuit board with a cavity penetrating between the first and second main surfaces.

The circuit board in which the cavity is formed may be prepared according to a conventionally known arbitrary procedure at the time of manufacturing the component-embedded wiring board. Hereinafter, an example of a procedure for preparing a circuit board in which a cavity is formed will be described with reference to FIGS. 1A and 1B.

First, a circuit board is prepared (Fig. 1A). In the present invention, the term "circuit board" refers to a plate-shaped substrate having opposing first and second main surfaces and having circuit wiring patterned on one or both of the first and second main surfaces. 1A schematically shows a cross section of the circuit board 11, and the circuit board 11 includes a board 12 and circuit wiring 13 such as via wiring and surface wiring. In the following description, for convenience, the first main surface of the circuit board refers to the lower main surface of the illustrated circuit board, and the second main surface of the circuit board refers to the upper main surface of the illustrated circuit board.

As the substrate 12 used for the circuit board 11, for example, a glass epoxy substrate, a metal substrate, a polyester substrate, a polyimide substrate, a BT resin substrate, a thermosetting polyphenylene ether substrate, etc. may be mentioned. Glass epoxy substrates are preferred. Further, when manufacturing a printed wiring board, an inner-layer circuit board of an intermediate product on which an insulating layer and/or a conductor layer should be formed is also included in the "circuit board" referred to in the present invention.

The thickness of the board 12 of the circuit board 11 is preferably thinner, preferably less than 400 µm, more preferably 350 µm or less, and even more preferably 300 µm or less, from the viewpoint of thinning the circuit board with built-in components. , More preferably 250 µm or less, particularly preferably 200 µm or less, 180 µm or less, 170 µm or less, 160 µm or less, or 150 µm or less. According to the method of the present invention, even when a circuit board provided with such a thin substrate is used, the occurrence of substrate warpage can be suppressed. The lower limit of the thickness of the substrate 12 is not particularly limited, but from the viewpoint of improving handling properties during transport, preferably 20 µm or more, more preferably 40 µm or more, 50 µm or more, 60 µm or more, 70 µm or more , Or 80 μm or more.

The coefficient of thermal expansion of the substrate 12 is preferably 15 ppm/°C or less, more preferably 13 ppm/°C or less, and still more preferably 11 ppm/°C or less from the viewpoint of suppressing the occurrence of circuit deformation or cracks. The lower limit of the coefficient of thermal expansion of the substrate 12 is also different depending on the composition of the resin composition used to form the insulating layer, but is preferably -2 ppm/°C or more, more preferably 0 ppm/°C or more, and even more preferably 4 ppm. /℃ or higher. In the present invention, the coefficient of thermal expansion of the substrate 12 is a coefficient of linear thermal expansion of 25 to 150°C in a planar direction obtained by thermomechanical analysis (TMA) by a tensile weighting method. Examples of thermomechanical analyzers that can be used to measure the linear thermal expansion coefficient of the substrate 12 include Rigaku Co., Ltd. ``Thermo Plus TMA8310'' and Seiko Instruments Co., Ltd. ``TMA-SS6100''. have.

The glass transition temperature (Tg) of the substrate 12 is preferably 170°C or higher, and more preferably 180°C or higher from the viewpoint of the mechanical strength of the circuit board with a built-in component. The upper limit of the Tg of the substrate 12 is not particularly limited, but is usually 300°C or less. The Tg of the substrate 12 can be measured by thermomechanical analysis by a tensile weighting method. As the thermomechanical analysis device, the same thing as the above can be used.

The dimensions of the circuit wiring 13 included in the circuit board 11 may be determined according to desired characteristics. For example, the thickness of the surface wiring is preferably 40 µm or less, more preferably 35 µm or less, still more preferably 30 µm or less, and even more preferably 25 µm or less from the viewpoint of thinning the circuit board with built-in components. , Particularly preferably 20 µm or less, 19 µm or less, or 18 µm or less. The lower limit of the thickness of the surface wiring is not particularly limited, but is usually 1 µm or more, 3 µm or more, 5 µm or more.

Next, a cavity for accommodating the component is installed on the circuit board (Fig. 1B). As schematically shown in FIG. 1B, a cavity 12a penetrating between the first and second main surfaces of the circuit board can be provided at a predetermined position on the substrate 12. Thereby, the circuit board 11' in which the cavity was formed is obtained. The cavity 12a can be formed by a known method using, for example, a drill, laser, plasma, etching medium or the like in consideration of the characteristics of the substrate 12.

Although only one cavity 12a is shown in FIG. 1B, a plurality of cavities 12a may be provided at predetermined intervals from each other. The pitch between the cavities 12a is preferably short from the viewpoint of miniaturization of the circuit board with built-in components. The pitch between the cavities 12a is also different depending on the opening size of the cavity 12a itself, but is preferably 10 mm or less, more preferably 9 mm or less, even more preferably 8 mm or less, even more preferably 7 mm or less, particularly It is preferably 6 mm or less. According to the method of the present invention, even when the cavity is provided with such a short pitch, it is possible to suppress the occurrence of substrate warpage. The lower limit of the pitch between the cavities 12a is also different depending on the opening size of the cavity 12a itself, but is usually 1 mm or more, 2 mm or more, and the like. Each pitch between the cavities 12a need not be the same over the circuit board, but may be different.

The shape of the opening of the cavity 12a is not particularly limited, and may be any shape such as a rectangle, a circle, an approximately rectangle, or an approximately circular shape. In addition, the opening dimension of the cavity 12a is also different depending on the design of the circuit wiring, for example, when the opening shape of the cavity 12a is rectangular, 5 mm x 5 mm or less is preferable, and 3 mm x 3 mm or less is more. desirable. The lower limit of the opening size is also different depending on the size of the part to be accommodated, but is usually 0.5 mm x 0.5 mm or more. The opening shape and opening dimension of the cavity 12a need not be the same over the circuit board, but may be different.

As described above, an example of a procedure for preparing a circuit board with a cavity has been described with reference to FIGS. 1A and 1B, but the procedure is not limited to the above procedure as long as a circuit board with a cavity is obtained. For example, circuit wiring may be provided after forming a cavity in the substrate. A form in which a circuit board with built-in components is manufactured using a circuit board with a cavity prepared by this modification is also within the scope of the present invention.

<Insulation substrate with cavity formed>

The insulating substrate having a cavity used in the method of the second embodiment of the present invention is an insulating substrate having first and second main surfaces, and having a cavity penetrating between the first and second main surfaces.

The insulating substrate in which the cavity is formed may be prepared according to an arbitrary procedure. Hereinafter, an example of a procedure for preparing an insulating substrate having a cavity formed thereon will be described with reference to FIGS. 2A and 2B.

First, an insulating substrate is used (Fig. 2A). In the present invention, the "insulating substrate" refers to a plate-shaped substrate having opposing first and second main surfaces and exhibiting electrical insulation. In the following description, for convenience, the first main surface of the insulating substrate refers to the lower main surface of the illustrated insulating substrate, and the second main surface of the insulating substrate refers to the upper main surface of the illustrated insulating substrate.

The insulating substrate 21 is not particularly limited, and may be a substrate in which insulation is imparted by coating a conductive substrate such as a metal substrate with an insulating material. However, from the viewpoint of suppressing the warpage of the substrate and from the viewpoint of the insulation reliability of the component-embedded substrate, the cured prepreg , A glass substrate or a ceramic substrate is preferable, and a cured prepreg is more preferable.

The cured prepreg refers to the cured product of the prepreg. The prepreg is a sheet-like material containing a thermosetting resin composition and a sheet-like fiber base material, and can be formed, for example, by impregnating a thermosetting resin composition into a sheet-like fiber base material. The thermosetting resin composition used for the prepreg is not particularly limited as long as the cured product has sufficient hardness and insulation, and a conventionally known thermosetting resin composition used for forming an insulating layer of a printed wiring board may be used. Alternatively, the thermosetting resin composition used for the prepreg may be the same composition as the thermosetting resin composition used for the adhesive film described later. The sheet-like fibrous base material used for the prepreg is not particularly limited, and a commercially available base material for prepreg may be used. From the viewpoint of reducing the thermal expansion coefficient of the cured prepreg, the sheet-like fiber base material is preferably a glass fiber base material, an organic fiber base material (for example, an aramid fiber base material), more preferably a glass fiber base material, and a glass woven fabric ( Glass cloth) is more preferred. As the glass fiber used for the glass fiber base material, from the viewpoint of reducing the coefficient of thermal expansion, at least one glass fiber selected from the group consisting of E glass fiber, S glass fiber, T glass fiber and Q glass fiber is preferable, S glass fiber and Q glass fiber are more preferable, and Q glass fiber is still more preferable. Q glass fiber refers to a glass fiber in which the content of silicon dioxide occupies 90% by mass or more. The thickness of the sheet-like fibrous substrate is preferably 200 µm or less, more preferably 100 µm or less, still more preferably 80 µm or less, even more preferably 50 µm or less, particularly from the viewpoint of thinning the cured prepreg. It is preferably 40 μm or less. The lower limit of the thickness of the sheet-like fiber substrate is preferably 1 µm or more, more preferably 10 µm or more, and still more preferably 15 µm or more from the viewpoint of obtaining a cured prepreg having sufficient rigidity.

The thickness of the insulating substrate 21 is preferably thinner, preferably less than 400 µm, more preferably 350 µm or less, still more preferably 300 µm or less, even more preferably from the viewpoint of thinning the component-embedded board. Is 250 µm or less, particularly preferably 200 µm or less, 180 µm or less, 170 µm or less, 160 µm or less, or 150 µm or less. According to the method of the present invention, even when such a thin insulating substrate is used, the occurrence of substrate warpage can be suppressed. The lower limit of the thickness of the insulating substrate 21 is not particularly limited, but from the viewpoint of improving the handling properties during transport, preferably 30 µm or more, more preferably 40 µm or more, still more preferably 50 µm or more, furthermore Preferably it is 60 micrometers or more, 70 micrometers or more, or 80 micrometers or more.

The thermal expansion coefficient and the glass transition temperature Tg of the insulating substrate 21 may be the same as the thermal expansion coefficient and the glass transition temperature Tg of the substrate 11.

Next, a cavity for accommodating the component is installed on the insulating substrate (Fig. 2B). As schematically shown in FIG. 2B, a cavity 21a penetrating between the first and second main surfaces of the insulating substrate can be provided at a predetermined position on the insulating substrate 21. The cavity 21a can be formed by a known method using, for example, a drill, laser, plasma, etching medium or the like in consideration of the characteristics of the insulating substrate 21.

Although only one cavity 21a is shown in FIG. 2B, a plurality of cavities 21a may be provided at predetermined intervals from each other. The pitch between the cavities 21a is preferably short from the viewpoint of miniaturization of the component-embedded substrate. The pitch between the cavities 21a may be the same as the pitch between the cavities 21a. Each pitch between the cavities 21a need not be the same over the insulating substrate, but may be different.

The opening shape and the opening dimension of the cavity 21a can be the same as the opening shape and the opening dimension of the cavity 12a. The opening shape and opening dimension of the cavity 21a need not be the same over the insulating substrate, but may be different.

By the above procedure, the insulating substrate 1'in which the cavity is formed can be prepared.

<Adhesive film>

In the method of the present invention, a first adhesive film and a second adhesive film are used.

(First adhesive film)

3 schematically shows a cross section of the first adhesive film. The first adhesive film 100 includes a first support 101 and a first thermosetting resin composition layer 102 bonded to the first support.

Examples of the first support include a film made of a plastic material, a metal foil, and a release paper, and a film made of a plastic material and a metal foil are preferable.

When a film made of a plastic material is used as the first support, examples of the plastic material include polyethylene terephthalate (hereinafter sometimes abbreviated as "PET"), polyethylene naphthalate (hereinafter abbreviated as "PEN"), for example. Polyester, polycarbonate (hereinafter sometimes abbreviated as "PC"), acrylic such as polymethyl methacrylate (PMMA), cyclic polyolefin, triacetylcellulose (TAC), polyether Sulfide (PES), polyether ketone, polyimide, etc. are mentioned. Among these, polyethylene terephthalate and polyethylene naphthalate are preferred, and inexpensive polyethylene terephthalate is particularly preferred.

When using a metal foil as a 1st support body, as a metal foil, a copper foil, an aluminum foil, etc. are mentioned, for example, copper foil is preferable. As the copper foil, a foil made of a single metal of copper may be used, and a foil made of an alloy of copper and other metals (eg, tin, chromium, silver, magnesium, nickel, zirconium, silicon, titanium, etc.) may be used. Also good.

The first support may be subjected to a mat treatment or corona treatment to the surface to be bonded to the first thermosetting resin composition layer described later.

Further, as the first support, a support with a release layer having a release layer on the surface to be bonded to the first thermosetting resin composition layer described later may be used. As a releasing agent used for the releasing layer of the support with a releasing layer, for example, one or more releasing agents selected from the group consisting of alkyd resins, polyolefin resins, urethane resins, and silicone resins can be mentioned. As the support with the release layer, a commercially available product may be used. For example, ``SK-1'', ``AL-5'', ``AL'' manufactured by Lintec Co., Ltd., which is a PET film having a release layer mainly composed of an alkyd resin release agent. -7" etc. are mentioned.

The thickness of the first support is not particularly limited, but is preferably in the range of 5 to 75 µm, and more preferably in the range of 10 to 60 µm. Moreover, when using a support body with a release layer, it is preferable that the thickness of the whole support body with a release layer is the said range.

The first support may contain a laser absorbing material, as described later. Examples of the laser absorbing material include metal compound powder, carbon powder, metal powder, and black dye. When a laser absorbing material is contained, the content of the laser absorbing material in the first support is preferably 0.05 to 40 mass%, more preferably 0.1 to 20 mass%.

The resin composition used for the first thermosetting resin composition layer reduces the thermal expansion coefficient of the obtained insulating layer, thereby preventing the occurrence of cracks or circuit deformation due to the difference in thermal expansion between the insulating layer and the conductor layer, and preventing excessive reduction in melt viscosity. It is preferable to contain an inorganic filler from a viewpoint of preventing and suppressing positional displacement of a part.

The content of the inorganic filler in the resin composition is preferably 30% by mass or more, more preferably 40% by mass or more, from the viewpoint of reducing the thermal expansion coefficient of the resulting insulating layer and from the viewpoint of preventing excessive reduction of the melt viscosity to suppress the positional displacement of the part. It is mass% or more, more preferably 50 mass% or more, still more preferably 60 mass% or more, particularly preferably 62 mass% or more, 64 mass% or more, or 66 mass% or more. In particular, from the viewpoint of suppressing the positional displacement of the parts, the content of the inorganic filler in the resin composition is preferably 50% by mass or more. The upper limit of the content of the inorganic filler in the resin composition is preferably 90% by mass or less, and more preferably 85% by mass or less from the viewpoint of the mechanical strength of the resulting insulating layer.

On the other hand, in the present invention, the content of each component in the resin composition is a value when the total of the nonvolatile components in the resin composition is 100% by mass.

As an inorganic filler, for example, silica, alumina, glass, cordierite, silicon oxide, barium sulfate, talc, clay, mica powder, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, nitride Aluminum, manganese nitride, aluminum borate, barium titanate, strontium titanate, calcium titanate, magnesium titanate, bismuth titanate, titanium oxide, barium zirconate, calcium zirconate, zirconium phosphate, and zirconium tungsten phosphate. Among these, silicas such as amorphous silica, fused silica, crystalline silica, synthetic silica and hollow silica are particularly suitable. Moreover, spherical silica is preferable as silica. The inorganic filler may be used alone or in combination of two or more. As commercially available spherical fused silica, "SOC2" and "SOC1" manufactured by Adomex Co., Ltd. are mentioned.

The average particle diameter of the inorganic filler is preferably in the range of 0.01 to 4 µm, more preferably in the range of 0.05 to 2 µm, even more preferably in the range of 0.1 to 1 µm, and even more preferably in the range of 0.3 to 0.8 µm. The average particle diameter of the inorganic filler can be measured by a laser diffraction/scattering method based on the Mie scattering theory. Specifically, it can be measured by creating a particle size distribution of an inorganic filler on a volume basis with a laser diffraction scattering type particle size distribution measuring device, and setting the median diameter as an average particle diameter. As the measurement sample, the inorganic filler dispersed in water by ultrasonic waves can be preferably used. As a laser diffraction scattering type particle size distribution measuring apparatus, "LA-500" manufactured by Horibasakusho Co., Ltd. can be used.

Inorganic fillers, from the viewpoint of improving moisture resistance and dispersibility, include aminosilane coupling agents, epoxysilane coupling agents, mercaptosilane coupling agents, silane coupling agents, organosilazane compounds, titanate coupling agents, etc. It is preferably treated with at least one surface treatment agent. As a commercial product of the surface treatment agent, Shin-Etsu Chemical Co., Ltd. "KBM403" (3-glycidoxypropyltrimethoxysilane), Shin-Etsu Chemical Co., Ltd. "KBM803" (3-mercapto) Propyltrimethoxysilane), Shin-Etsu Chemical Co., Ltd. "KBE903" (3-aminopropyl triethoxysilane), Shin-Etsu Chemical Co., Ltd. "KBM573" (N-phenyl-3-aminopropyl tri Methoxysilane), Shin-Etsu Chemical Co., Ltd. product "SZ-31" (hexamethyldisilazane), etc. are mentioned.

The degree of surface treatment by the surface treatment agent can be evaluated by the amount of carbon per unit surface area of the inorganic filler. The amount of carbon per unit surface area of the inorganic filler is preferably 0.02 mg/m 2 or more, more preferably 0.1 mg/m 2 or more, and still more preferably 0.2 mg/m 2 or more, from the viewpoint of improving the dispersibility of the inorganic filler. On the other hand, from the viewpoint of preventing an increase in the melt viscosity of the resin varnish or the melt viscosity in the form of a film, 1 mg/m 2 or less is preferable, 0.8 mg/m 2 or less is more preferable, and 0.5 mg/m 2 or less is still more preferable. .

The amount of carbon per unit surface area of the inorganic filler can be measured after washing the inorganic filler after surface treatment with a solvent (for example, methyl ethyl ketone (MEK)). Specifically, a sufficient amount of MEK as a solvent is added to the inorganic filler surface-treated with a surface treatment agent, followed by ultrasonic cleaning at 25°C for 5 minutes. After removing the supernatant and drying the solid, the amount of carbon per unit surface area of the inorganic filler can be measured using a carbon analyzer. As a carbon analyzer, "EMIA-320V" manufactured by Horibasakusho, etc. can be used.

As the thermosetting resin used for the first thermosetting resin composition layer, a conventionally known thermosetting resin used when forming the insulating layer of a printed wiring board can be used, and among them, an epoxy resin is preferable. In one embodiment, the resin composition used for the 1st thermosetting resin composition layer contains an inorganic filler and an epoxy resin. The resin composition may further contain a curing agent as necessary. In one embodiment, the resin composition used for the 1st thermosetting resin composition layer contains an inorganic filler, an epoxy resin, and a hardening agent. The resin composition used for the first thermosetting resin composition layer may further contain additives such as a thermoplastic resin, a curing accelerator, a flame retardant, and rubber particles.

Hereinafter, an epoxy resin, a curing agent, and an additive that can be used as a material of the resin composition will be described.

-Epoxy resin-

As an epoxy resin, for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AF type epoxy resin, dicyclopentadiene type epoxy resin, trisphenol type epoxy resin, naphthol novolak type Epoxy resin, phenol novolak type epoxy resin, tert-butyl-catechol type epoxy resin, naphthalene type epoxy resin, naphthol type epoxy resin, anthracene type epoxy resin, glycidylamine type epoxy resin, glycidyl ester type epoxy resin, Cresol novolak type epoxy resin, biphenyl type epoxy resin, linear aliphatic epoxy resin, butadiene structure epoxy resin, alicyclic epoxy resin, heterocyclic epoxy resin, spiro ring containing epoxy resin, cyclohexanedimethanol type epoxy resin, naphe And a styrene ether type epoxy resin and a trimethylol type epoxy resin. Epoxy resin may be used individually by 1 type, or may use 2 or more types together.

It is preferable that the epoxy resin contains an epoxy resin having two or more epoxy groups in one molecule. When the nonvolatile component of the epoxy resin is 100% by mass, at least 50% by mass or more is preferably an epoxy resin having two or more epoxy groups per molecule. Among these, an epoxy resin having two or more epoxy groups in one molecule, liquid at a temperature of 20°C (hereinafter referred to as “liquid epoxy resin”), and three or more epoxy groups per molecule, and a solid state at a temperature of 20°C. It is preferable to contain a phosphorus epoxy resin (hereinafter referred to as "solid epoxy resin"). As the epoxy resin, a resin composition having excellent flexibility is obtained by using a liquid epoxy resin and a solid epoxy resin together. Further, the breaking strength of the insulating layer formed by curing the resin composition is also improved.

The liquid epoxy resin is preferably a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a phenol novolak type epoxy resin, or a naphthalene type epoxy resin, and a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, or a naphthalene type epoxy resin Is more preferable. As a specific example of the liquid epoxy resin, "HP4032", "HP4032H", "HP4032D", "HP4032SS" (naphthalene type epoxy resin) manufactured by DIC Corporation, and "jER828EL" manufactured by Mitsubishi Chemical Corporation (bisphenol A type Epoxy resin), ``jER807'' (bisphenol F-type epoxy resin), ``jER152'' (phenol novolac-type epoxy resin), ``ZX1059'' manufactured by Shinnittetsu Sumiking Chemical Co., Ltd. (bisphenol A-type epoxy resin and bisphenol F type Mixtures of epoxy resins), "EX-721" manufactured by Nagase Chemtex Co., Ltd. (glycidyl ester type epoxy resin), and the like. These may be used individually by 1 type, or may use 2 or more types together.

As the solid epoxy resin, naphthalene type tetrafunctional epoxy resin, cresol novolak type epoxy resin, dicyclopentadiene type epoxy resin, trisphenol type epoxy resin, naphthol novolak type epoxy resin, biphenyl type epoxy resin, or naphthylene ether A type epoxy resin is preferable, a naphthalene type tetrafunctional epoxy resin, a biphenyl type epoxy resin, or a naphthylene ether type epoxy resin is more preferable, and a biphenyl type epoxy resin is still more preferable. As a specific example of the solid epoxy resin, "HP-4700", "HP-4710" (naphthalene-type tetrafunctional epoxy resin), "N-690" (cresol novolac-type epoxy resin) manufactured by DIC Corporation, and "N- 695" (cresol novolak type epoxy resin), "HP-7200" (dicyclopentadiene type epoxy resin), "EXA7311", "EXA7311-G3", "HP6000", "EXA7311-G4", "EXA7311-G4S" '' (Naphthylene ether type epoxy resin), ``EPPN-502H'' manufactured by Nihon Kayaku Co., Ltd. (trisphenol epoxy resin), ``NC7000L'' (naphthol novolac epoxy resin), ``NC3000H'', ``NC3000'', `` NC3000L”, “NC3100” (biphenyl type epoxy resin), “ESN475V” (naphthol novolak type epoxy resin) manufactured by Shinnittetsu Sumiking Chemical Co., Ltd., “ESN485” (naphthol novolak type epoxy resin), Mitsubishiga "YL6121" (biphenyl-type epoxy resin), "YX4000H", "YX4000HK" (bixylenol-type epoxy resin) manufactured by Gaku Corporation, "PG-100", "CG-500" manufactured by Osaka Gas Chemical Co., Ltd. ", "YL7800" (fluorene type epoxy resin) manufactured by Mitsubishi Chemical Co., Ltd. can be mentioned.

When a liquid epoxy resin and a solid epoxy resin are used in combination as the epoxy resin, the amount ratio (liquid epoxy resin: solid epoxy resin) is preferably in the range of 1:0.1 to 1:4 by mass ratio. By setting the amount ratio of the liquid epoxy resin and the solid epoxy resin to such a range, i) proper adhesion is brought about when used in the form of an adhesive film, and ii) sufficient flexibility is obtained when used in the form of an adhesive film, The handleability is improved, and effects such as iii) being able to obtain an insulating layer having sufficient breaking strength are obtained. From the viewpoint of the effects of the above i) to iii), the ratio of the liquid epoxy resin to the solid epoxy resin (liquid epoxy resin: solid epoxy resin) is in the range of 1:0.3 to 1:3.5 by mass ratio, more preferably 1 The range of :0.6 to 1:3 is more preferable, and the range of 1:0.8 to 1:2.5 is particularly preferable.

The content of the epoxy resin in the resin composition is preferably 3 to 50% by mass, more preferably 5 to 45% by mass, still more preferably 5 to 40% by mass, and particularly preferably 7 to 35% by mass.

The epoxy equivalent of the epoxy resin is preferably 50 to 3000, more preferably 80 to 2000, still more preferably 110 to 1000. By being in this range, the crosslinking density of a cured product becomes sufficient, and an insulating layer with low surface roughness is produced. On the other hand, the epoxy equivalent can be measured according to JIS K 7236, and is the mass of a resin containing 1 equivalent of an epoxy group.

-Hardener-

The curing agent is not particularly limited as long as it has a function of curing the epoxy resin, and examples thereof include a phenol curing agent, a naphthol curing agent, an active ester curing agent, a benzoxazine curing agent, and a cyanate ester curing agent. The curing agent may be used alone or in combination of two or more.

As the phenolic curing agent and the naphthol curing agent, from the viewpoint of heat resistance and water resistance, a phenolic curing agent having a novolac structure or a naphthol curing agent having a novolac structure is preferable. Further, from the viewpoint of adhesion to the conductor layer (circuit wiring), a nitrogen-containing phenol-based curing agent or a nitrogen-containing naphthol-based curing agent is preferable, and a triazine skeleton-containing phenolic curing agent or a triazine skeleton-containing naphthol curing agent is more preferable. Among these, it is preferable to use a triazine skeleton-containing phenol novolac resin as a curing agent from the viewpoint of highly satisfying heat resistance, water resistance, and adhesion (peel strength) with the conductor layer.

Specific examples of the phenolic curing agent and the naphthol curing agent include, for example, "MEH-7700", "MEH-7810", "MEH-7851" manufactured by Meiwa Kasei Co., Ltd., and manufactured by Nihon Kayaku Corporation. "NHN", "CBN", "GPH", "SN170", "SN180", "SN190", "SN475", "SN485", "SN495", "SN375" manufactured by Shin-Nitetsu Sumiking Chemical Co., Ltd. "SN395", "LA7052", "LA7054", and "LA3018" manufactured by DIC Corporation are mentioned.

Although there is no restriction|limiting in particular as an active ester-type hardening agent, In general, 2 ester groups with high reactive activity, such as phenol esters, thiophenol esters, N-hydroxyamine esters, and esters of heterocyclic hydroxy compounds, per molecule. Compounds having two or more are preferably used. The active ester-based curing agent is preferably obtained by a condensation reaction of a carboxylic acid compound and/or a thiocarboxylate compound and a hydroxy compound and/or a thiol compound. In particular, from the viewpoint of improving heat resistance, an active ester curing agent obtained from a carboxylic acid compound and a hydroxy compound is preferable, and an active ester curing agent obtained from a carboxylic acid compound and a phenol compound and/or a naphthol compound is more preferable. Examples of the carboxylic acid compound include benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid, and pyromellitic acid. As a phenol compound or a naphthol compound, for example, hydroquinone, resorcin, bisphenol A, bisphenol F, bisphenol S, phenolphthalin, methylated bisphenol A, methylated bisphenol F, methylated bisphenol S, phenol, o-cresol, m- Cresol, p-cresol, catechol, α-naphthol, β-naphthol, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, dihydroxybenzophenone, Trihydroxybenzophenone, tetrahydroxybenzophenone, fluoroglucine, benzenetriol, dicyclopentadiene-type diphenol, phenol novolac, and the like.

Specifically, an active ester compound containing a dicyclopentadiene-type diphenol structure, an active ester compound containing a naphthalene structure, an active ester compound containing an acetylated product of phenol novolac, and a benzoylated product of phenol novolac. Active ester compounds are preferred, and among them, active ester compounds containing a naphthalene structure and active ester compounds containing a dicyclopentadiene-type diphenol structure are more preferred. On the other hand, in the present invention, the "dicyclopentadiene-type diphenol structure" refers to a divalent structural unit composed of phenylene-dicyclopentalene-phenylene.

Commercially available active ester curing agents are active ester compounds containing dicyclopentadiene-type diphenol structures, such as ``EXB9451'', ``EXB9460'', ``EXB9460S'', and ``HPC-8000-65T'' (manufactured by DIC Corporation). , ``EXB9416-70BK'' (manufactured by DIC Corporation) as an active ester compound containing a naphthalene structure, ``DC808'' (manufactured by Mitsubishi Chemical Corporation) as an active ester compound containing an acetylated phenol novolac, phenol As an active ester compound containing a benzoylated novolac, "YLH1026" (manufactured by Mitsubishi Chemical Co., Ltd.) and the like can be mentioned.

As specific examples of the benzoxazine-based curing agent, "HFB2006M" manufactured by Showa Kohunshi Co., Ltd., "P-d" and "F-a" manufactured by Shikoku Chemical Engineering Co., Ltd. are mentioned.

As a cyanate ester curing agent, for example, bisphenol A dicyanate, polyphenol cyanate, oligo(3-methylene-1,5-phenylene cyanate), 4,4'-methylenebis(2,6- Dimethylphenylcyanate), 4,4′-ethylidenediphenyldicyanate, hexafluorobisphenol A dicyanate, 2,2-bis(4-cyanate)phenylpropane, 1,1-bis(4- Cyanatephenylmethane), bis(4-cyanate-3,5-dimethylphenyl)methane, 1,3-bis(4-cyanatephenyl-1-(methylethylidene))benzene, bis(4-cya Difunctional cyanate resins such as natephenyl)thioether, and bis(4-cyanatephenyl)ether, polyfunctional cyanate resins derived from phenol novolac and cresol novolac, and these cyanate resins are partially triazineized Prepolymers, etc. are mentioned. As specific examples of the cyanate ester curing agent, ``PT30'' and ``PT60'' manufactured by Ronza Japan Co., Ltd. (any phenol novolak type polyfunctional cyanate ester resin), ``BA230'' (part of bisphenol A dicyanate or Prepolymers in which all of them are triazineized to become trimers) and the like.

The amount ratio of the epoxy resin and the curing agent is a ratio of [the total number of epoxy groups of the epoxy resin]: [the total number of reactors of the curing agent], and is preferably in the range of 1:0.2 to 1:2, and 1:0.3 to 1:1.5 Is more preferable, and 1:0.4 to 1:1 is more preferable. Here, the reactive group of the curing agent is an active hydroxyl group, an active ester group, or the like, and varies depending on the type of curing agent. In addition, the total number of epoxy groups in the epoxy resin is a value obtained by dividing the solid content mass of each epoxy resin by the epoxy equivalent weight for all epoxy resins, and the total number of reactors of the curing agent is the solid content mass of each curing agent divided by the reactor equivalent. The value is the sum of all curing agents. By setting the amount ratio of the epoxy resin and the curing agent in such a range, the heat resistance of the cured product of the resin composition is further improved.

In one embodiment, the resin composition used for the 1st thermosetting resin composition layer contains the said inorganic filler, an epoxy resin, and a hardening agent. The resin composition includes silica as an inorganic filler, and a mixture of a liquid epoxy resin and a solid epoxy resin as an epoxy resin (the mass ratio of the liquid epoxy resin: the solid epoxy resin is preferably in the range of 1:0.1 to 1:4, and 1:0.3 to The range of 1:3.5 is more preferable, the range of 1:0.6 to 1:3 is more preferable, and the range of 1:0.8 to 1:2.5 is particularly preferable.), as a curing agent, a phenolic curing agent and a naphthol curing agent. , At least one selected from the group consisting of an active ester curing agent and a cyanate ester curing agent (preferably, at least one selected from the group consisting of a phenolic curing agent and a naphthol curing agent, more preferably a triazine skeleton-containing phenol It is preferable to each contain at least one selected from the group consisting of a novolac resin and a naphthol-based curing agent, more preferably a curing agent containing a triazine skeleton-containing phenol novolak resin). Regarding the resin composition containing these specific components in combination, the appropriate content of the inorganic filler, the epoxy resin, and the curing agent is as described above, but among them, the content of the inorganic filler is 30 to 90% by mass, and the content of the epoxy resin is 3 It is preferable that it is 50 to 50 mass %, and it is more preferable that the content of an inorganic filler is 50 to 90 mass %, and the content of an epoxy resin is 5 to 45 mass %. Regarding the content of the curing agent, the ratio of the total number of epoxy groups in the epoxy resin and the total number of reactors of the curing agent is in the range of 1:0.2 to 1:2, more preferably in the range of 1:0.3 to 1:1.5 , More preferably 1:0.4 to 1:1.

The resin composition may further contain additives such as a thermoplastic resin, a curing accelerator, a flame retardant, and rubber particles, if necessary.

-Thermoplastic resin-

Examples of the thermoplastic resin include phenoxy resin, polyvinyl acetal resin, polyolefin resin, polybutadiene resin, polyimide resin, polyamideimide resin, polyethersulfone resin, polyphenylene ether resin, and polysulfone resin. Can be lifted. Thermoplastic resins may be used alone or in combination of two or more.

The weight average molecular weight of the thermoplastic resin in terms of polystyrene is preferably in the range of 8,000 to 70,000, more preferably in the range of 10,000 to 60,000, and even more preferably in the range of 20,000 to 60,000. The weight average molecular weight of the thermoplastic resin in terms of polystyrene is measured by gel permeation chromatography (GPC). Specifically, the weight average molecular weight of the thermoplastic resin in terms of polystyrene is LC-9A/RID-6A manufactured by Shimadzu Corporation as a measuring device, and Shodex K-800P/K manufactured by Showa Denko Corporation as a column. -804L/K-804L can be measured at a column temperature of 40°C using chloroform or the like as a mobile phase, and calculated using a calibration curve of standard polystyrene.

As the phenoxy resin, for example, bisphenol A skeleton, bisphenol F skeleton, bisphenol S skeleton, bisphenol acetphenone skeleton, novolac skeleton, biphenyl skeleton, fluorene skeleton, dicyclopentadiene skeleton, norbornene skeleton, naphthalene And a phenoxy resin having one or more skeletons selected from the group consisting of skeletons, anthracene skeletons, adamantane skeletons, terpene skeletons, and trimethylcyclohexane skeletons. The terminal of the phenoxy resin may be any functional group such as a phenolic hydroxyl group or an epoxy group. Phenoxy resins may be used alone or in combination of two or more. As specific examples of the phenoxy resin, "1256" and "4250" manufactured by Mitsubishi Chemical Co., Ltd. (both are bisphenol A skeleton-containing phenoxy resins), "YX8100" (bisphenol S skeleton-containing phenoxy resin) and "YX6954" ( Bisphenol acetphenone skeleton-containing phenoxy resin), and in addition, "FX280" and "FX293" manufactured by Shinnittetsu Sumiking Chemical Co., Ltd., "YL7553" and "YL6794" manufactured by Mitsubishi Chemical Corporation. , "YL7213", "YL7290", and "YL7482".

As a specific example of a polyvinyl acetal resin, Denki Chemical Co., Ltd. product Denkabutyral 4000-2, 5000-A, 6000-C, 6000-EP, Sekisui Chemical Co., Ltd. product SREC BH series , BX series, KS series, BL series, and BM series.

As a specific example of a polyimide resin, "Licacoat SN20" and "Licacoat PN20" manufactured by Shinnihon Rika Co., Ltd. are mentioned. As a specific example of the polyimide resin, further, a linear polyimide obtained by reacting a bifunctional hydroxyl group-terminated polybutadiene, a diisocyanate compound and a tetrabasic acid anhydride (described in Japanese Laid-Open Patent Publication No. 2006-37083), a polysiloxane skeleton And modified polyimides such as containing polyimides (described in JP 2002-12667 A and JP 2000-319386 A).

As a specific example of a polyamide-imide resin, "Viromax HR11NN" and "Viromax HR16NN" manufactured by Toyobo Seki Co., Ltd. are mentioned. As a specific example of the polyamideimide resin, modified polyamideimide, such as the polyamideimide "KS9100" and "KS9300" with a polysiloxane skeleton manufactured by Hitachi Chemical Industries, Ltd., can be mentioned.

As a specific example of a polyether sulfone resin, "PES5003P" etc. manufactured by Sumitomo Chemical Co., Ltd. are mentioned.

As a specific example of a polysulfone resin, the polysulfone "P1700" and "P3500" manufactured by Solvay Advanced Polymers Co., Ltd. can be mentioned.

The content of the thermoplastic resin in the resin composition is preferably 0.1 to 20% by mass. By setting the content of the thermoplastic resin in such a range, the viscosity of the resin composition becomes appropriate, and a resin composition having a uniform thickness and bulk properties can be formed. It is more preferable that the content of the thermoplastic resin in the resin composition is 0.5 to 10% by mass.

-Hardening accelerator-

Examples of the curing accelerator include phosphorus curing accelerators, amine curing accelerators, imidazole curing accelerators, guanidine curing accelerators, and the like, phosphorus curing accelerators, amine curing accelerators, and imidazole curing accelerators are preferred. , An amine-based curing accelerator and an imidazole-based curing accelerator are more preferable.

Examples of phosphorus-based curing accelerators include triphenylphosphine, phosphonium borate compounds, tetraphenylphosphonium tetraphenylborate, n-butylphosphonium tetraphenylborate, tetrabutylphosphonium decanoate, (4-methylphenyl)triphenyl Phosphonium thiocyanate, tetraphenylphosphonium thiocyanate, butyl triphenylphosphonium thiocyanate, etc. are mentioned, and triphenylphosphine and tetrabutylphosphonium decanoate are preferable.

Examples of amine-based curing accelerators include trialkylamines such as triethylamine and tributylamine, 4-dimethylaminopyridine, benzyldimethylamine, 2,4,6-tris(dimethylaminomethyl)phenol, 1,8 -Diazabicyclo(5,4,0)-undecene, and the like, and 4-dimethylaminopyridine and 1,8-diazabicyclo(5,4,0)-undecene are preferable.

Examples of the imidazole-based curing accelerator include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, and 2-ethyl-4-methyl Imidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methyl Midazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl -4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimeritate, 1-cyanoethyl-2-phenylimidazolium Trimeritate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-undecyl Imidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s- Triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3-dihydro-1H-pyrroro[1,2-a ]Imidazole compounds such as benzimidazole, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazoline, and 2-phenylimidazoline, and adducts of imidazole compounds and epoxy resins Sieves are mentioned, and 2-ethyl-4-methylimidazole and 1-benzyl-2-phenylimidazole are preferable.

Examples of the guanidine-based curing accelerator include dicyandiamide, 1-methylguanidine, 1-ethylguanidine, 1-cyclohexylguanidine, 1-phenylguanidine, 1-(o-tolyl)guanidine, dimethylguanidine, and diphenylguanidine. , Trimethylguanidine, tetramethylguanidine, pentamethylguanidine, 1,5,7-triazabicyclo[4.4.0]deca-5-ene, 7-methyl-1,5,7-triazabicyclo[4.4.0] Deca-5-ene, 1-methyl biguanide, 1-ethyl biguanide, 1-n-butyl biguanide, 1-n-octadecyl biguanide, 1,1-dimethyl biguanide, 1, 1-diethyl biguanide, 1-cyclohexyl biguanide, 1-allyl biguanide, 1-phenyl biguanide, 1-(o-tolyl) biguanide, etc. are mentioned, dicyandiamide, 1,5,7-triazabicyclo[4.4.0]deca-5-ene is preferred.

Curing accelerators may be used alone or in combination of two or more. The content of the curing accelerator in the resin composition is preferably used in the range of 0.05 to 3% by mass when the total amount of the epoxy resin and the nonvolatile component of the curing agent is 100% by mass.

-Flame retardant-

Examples of the flame retardant include an organic phosphorus flame retardant, an organic nitrogen-containing phosphorus compound, a nitrogen compound, a silicon flame retardant, and a metal hydroxide. Flame retardants may be used alone or in combination of two or more. The content of the flame retardant in the resin composition layer is not particularly limited, but is preferably 0.5 to 10% by mass, more preferably 1 to 9% by mass, and still more preferably 1.5 to 8% by mass.

-Rubber particles-

As the rubber particles, for example, those that are not soluble in an organic solvent described later and are not compatible with the above-described epoxy resin, curing agent, and thermoplastic resin are used. In general, such rubber particles are prepared by increasing the molecular weight of the rubber component to a level in which it is not dissolved in an organic solvent or resin to form particles.

Examples of the rubber particles include core-shell rubber particles, cross-linked acrylonitrile butadiene rubber particles, cross-linked styrene butadiene rubber particles, and acrylic rubber particles. Core-shell rubber particles are rubber particles having a core layer and a shell layer, for example, a two-layer structure in which the shell layer of the outer layer is composed of a glassy polymer, the core layer of the inner layer is composed of a rubbery polymer, or the shell layer of the outer layer is And a three-layer structure composed of a glassy polymer, an intermediate layer of a rubbery polymer, and a core layer of a glassy polymer. The glassy polymer layer is composed of, for example, a methyl methacrylate polymer, and the rubbery polymer layer is composed of, for example, a butyl acrylate polymer (butyl rubber) or the like. The rubber particles may be used alone or in combination of two or more.

The average particle diameter of the rubber particles is preferably in the range of 0.005 to 1 µm, more preferably in the range of 0.2 to 0.6 µm. The average particle diameter of the rubber particles can be measured using a dynamic light scattering method. For example, rubber particles are uniformly dispersed in an appropriate organic solvent by ultrasonic or the like, and the particle size distribution of rubber particles is prepared based on mass using a thick particle diameter analyzer (FPAR-1000; manufactured by Otsuka Denshi Co., Ltd.). And it can measure by making the median diameter into the average particle diameter. The content of the rubber particles in the resin composition is preferably 1 to 10% by mass, more preferably 2 to 5% by mass.

The resin composition used for the first thermosetting resin composition layer may contain other additives as necessary, and such other additives include, for example, organometallic compounds such as organocopper compounds, organozinc compounds, and organocobalt compounds. , And resin additives such as an organic filler, a thickener, an antifoaming agent, a leveling agent, an adhesive imparting agent, and a colorant.

The thickness of the first thermosetting resin composition layer is preferably 80 µm or less, more preferably 60 µm or less, still more preferably 40 µm or less, even more preferably 30 µm from the viewpoint of thinning the component-embedded wiring board. Below. The lower limit of the thickness of the first thermosetting resin composition layer is not particularly limited, but is usually 10 μm or more.

The lowest melt viscosity of the first thermosetting resin composition layer is preferably 100 poise or more, more preferably 300 poise or more, even more preferably from the viewpoint of layer retention (prevention of leakage) during the manufacture of a component-embedded wiring board. Is 500 poise or more. The upper limit of the lowest melt viscosity of the first thermosetting resin composition layer is not particularly limited, but is preferably 10000 poise or less, more preferably 8000 poise or less, still more preferably 6000 poise or less, even more preferably 4000 poise or less. , Particularly preferably 3000 poise or less.

Here, the "lowest melt viscosity" of the thermosetting resin composition layer refers to the lowest viscosity exhibited by the thermosetting resin composition layer when the resin of the thermosetting resin composition layer is melted. Specifically, when the resin is melted by heating the thermosetting resin composition layer at a constant temperature rising rate, the melt viscosity in the initial stage decreases with increasing temperature, and after that, when the temperature exceeds a certain temperature, the melt viscosity increases along with the temperature increase. . The "lowest melt viscosity" refers to the melt viscosity at such a minimum point. The lowest melt viscosity of the thermosetting resin composition layer can be measured by a dynamic viscoelastic method. Specifically, the minimum melt viscosity of the thermosetting resin composition layer can be obtained by performing dynamic viscoelasticity measurement under the conditions of a measurement start temperature of 60°C, a temperature increase rate of 5°C/min, a frequency of 1 Hz, and a strain of 1 deg. As a dynamic viscoelasticity measuring device, "Rheosol-G3000" manufactured by Yu-B-M Co., Ltd. can be mentioned, for example.

(2nd adhesive film)

The second adhesive film includes a second support and a second thermosetting resin composition layer bonded to the second support.

The material and thickness of the second support may be the same as those described for the first support.

The material of the second thermosetting resin composition layer may be the same as that described for the first thermosetting resin composition layer.

The content of the inorganic filler in the resin composition constituting the second thermosetting resin composition layer from the viewpoint of lowering the thermal expansion coefficient of the obtained insulating layer and preventing excessive reduction of the melt viscosity at the time of thermosetting to suppress the positional displacement of the part It is preferably at least 30% by mass, more preferably at least 40% by mass, still more preferably at least 50% by mass, still more preferably at least 60% by mass, particularly preferably at least 62% by mass, 64 It is mass% or more, or 66 mass% or more. In particular, it is preferably 50% by mass or more from the viewpoint of suppressing the positional displacement of the parts. The upper limit of the content of the inorganic filler in the resin composition is preferably 90% by mass or less, and more preferably 85% by mass or less from the viewpoint of mechanical strength and embedding property of the resulting insulating layer.

The thickness of the second thermosetting resin composition layer is preferably 100 µm or less, more preferably 80 µm or less, still more preferably 60 µm or less, even more preferably 50 µm from the viewpoint of thinning the component-embedded wiring board. Below. The lower limit of the thickness of the second thermosetting resin composition layer is also different depending on the thickness of the inner substrate and the like, but is usually 15 µm or more from the viewpoint of embedding properties and cavity filling properties.

In one suitable embodiment, the second thermosetting resin composition layer is thicker than the first thermosetting resin composition layer.

From the viewpoint of realizing sufficient embedding property and cavity filling property in the manufacture of a component-embedded wiring board, the lowest melt viscosity of the second thermosetting resin composition layer is preferably 10000 poise or less, more preferably 8000 poise or less, It is still more preferably 6000 poise or less, still more preferably 4000 poise or less, and particularly preferably 3000 poise or less. The lower limit of the lowest melt viscosity of the second thermosetting resin composition layer is preferably 100 poise or more, more preferably 300 poise or more, and further from the viewpoint of layer retention (spill prevention) at the time of manufacturing a component-embedded wiring board. Preferably it is 500 poise or more.

Hereinafter, an example of the procedure for producing the first and second adhesive films is shown.

Regardless of the first and second adhesive films, for example, a resin varnish in which a resin composition is dissolved in an organic solvent is prepared, and the resin varnish is applied on a support body using a die coater or the like, and the resin varnish is applied. It can be produced by drying.

Examples of the organic solvent include ketones such as acetone, methyl ethyl ketone and cyclohexanone, ethyl acetate, butyl acetate, cellosolve acetate, acetic acid esters such as propylene glycol monomethyl ether acetate and carbitol acetate, cellosolve, and Carbitols such as butylcarbitol, aromatic hydrocarbons such as toluene and xylene, and amide solvents such as dimethylformamide, dimethylacetamide, and N-methylpyrrolidone. Organic solvents may be used alone or in combination of two or more.

Drying of the resin varnish may be performed by a known drying method such as heating or hot air spraying. Although it also differs depending on the boiling point of the organic solvent in the resin varnish, for example, in the case of using a resin varnish containing 30 to 60 mass% of an organic solvent, drying at 50 to 150°C for 3 to 10 minutes, the thermosetting resin on the support A composition layer can be formed.

Regardless of the first and second adhesive films, the adhesive film may further include a protective film on the surface of the thermosetting resin composition layer that is not bonded to the support body (that is, the surface opposite to the support body). The protective film contributes to the prevention of adhesion of dust or the like to the surface of the thermosetting resin composition layer and scratches. As the material of the protective film, the same material as described for the support may be used. The thickness of the protective film is not particularly limited, but is, for example, 1 to 40 µm. When manufacturing a component-embedded wiring board, the adhesive film becomes usable by peeling a protective film.

As mentioned above, although an example of the procedure of manufacturing the 1st and 2nd adhesive films was shown, as long as the 1st and 2nd adhesive films are obtained, it is not limited to the said procedure. For example, after forming a thermosetting resin composition layer on a protective film, you may laminate a support body on the said thermosetting resin composition layer, and you may produce an adhesive film. In the present invention, the term "support" refers to a member laminated on the main surface of the inner substrate together with the thermosetting resin composition layer at the time of manufacturing the component-embedded wiring board, and limited to the support member of the resin varnish at the time of manufacturing the adhesive film. It is not indicated as.

Hereinafter, the manufacturing method of the component-embedded wiring board of this invention is demonstrated in detail based on the preferred embodiment.

<Method of the first embodiment>

In the method of the first embodiment of the present invention, a circuit board is used as the inner layer substrate. Thus, the method of the first embodiment of the present invention includes the following steps (A1), (B1), (C1) and (D1) in this order:

(A1) A circuit board having first and second main surfaces and having a cavity penetrating between the first and second main surfaces, comprising a first support and a first thermosetting resin composition layer bonded to the first support 1 Step of vacuum laminating the adhesive film so that the first thermosetting resin composition layer is bonded to the first main surface of the circuit board

(B1) Process of temporarily attaching parts to the first thermosetting resin composition layer in the cavity

(C1) A second adhesive film comprising a second support and a second thermosetting resin composition layer bonded to the second support on the second main surface of the circuit board, and the second thermosetting resin composition layer is the second main surface of the circuit board. As a process of vacuum laminating so as to bond with, the process of vacuum laminating under conditions where the heating temperature of the surface of the first adhesive film is lower than the heating temperature of the surface of the second adhesive film

(D1) A step of forming an insulating layer by thermosetting the first and second thermosetting resin composition layers.

Hereinafter, each step of the method of the first embodiment of the present invention will be described with reference to Figs. 4A to 4G.

-Step (A1)-

In step (A1), the first adhesive film 100 is vacuum-laminated on the circuit board 11 ′ in which the cavity is formed so that the first thermosetting resin composition layer 102 is bonded to the first main surface of the circuit board (Fig. 4a).

The configuration of the circuit board 11 ′ in which the cavity is formed and the first adhesive film 100 are as described above.

Vacuum lamination of the first adhesive film 100 onto the circuit board 11 ′ in which the cavity is formed, for example, under reduced pressure conditions, from the first support 101 side, the first adhesive film 100 It can be performed by heat-pressing bonding to the formed circuit board 11'. As a member (not shown; hereinafter, also referred to as "heat compression member") for heat-pressing the first adhesive film 100 to the circuit board 11' in which the cavity is formed, for example, a heated metal plate (SUS hard plate). Etc.) or a metal roll (SUS roll), etc. are mentioned. In addition, without directly pressing the heat-pressed member onto the first adhesive film 100, the first adhesive film 100 is applied to the unevenness caused by the circuit wiring 13 or the cavity 12a of the circuit board 11' in which the cavity is formed. It is preferable to press through an elastic material such as heat-resistant rubber so that) is sufficiently harvested.

The heating compression temperature is preferably in the range of 60 to 160°C, more preferably 70 to 140°C, even more preferably 80 to 130°C, and the heating compression pressure is preferably 0.098 to 1.77 MPa, more preferably Is in the range of 0.29 to 1.47 MPa, more preferably 0.40 to 1.10 MPa, and the heat compression time is preferably in the range of 10 to 400 seconds, more preferably 20 to 300 seconds, and even more preferably 20 to 200 seconds. . Vacuum lamination is preferably carried out under reduced pressure conditions of 26.7 hPa or less. On the other hand, the heat press bonding temperature refers to the surface temperature of the heat press bonding member, and when pressing through an elastic material such as heat-resistant rubber, refers to the temperature of the surface of the elastic material bonded to the first adhesive film.

Vacuum lamination can be performed by a commercially available vacuum laminator. As a commercially available vacuum laminator, for example, a vacuum pressurized laminator manufactured by Meiki Sesakusho Co., Ltd. and a vacuum applicator manufactured by Nichigo Moton Co., Ltd. are mentioned.

In this step (A1), the first thermosetting resin composition layer 102 is bonded to the first main surface of the circuit board 1'in which the cavity is formed (Fig. 4B). At that time, the first thermosetting resin composition layer 102 fills the circuit 13 such as the surface wiring formed on the first main surface of the circuit board, and also fills a partial region within the cavity 12a (Fig. 4B). Hereinafter, the region in the cavity 12a filled by the first thermosetting resin composition layer 102 is referred to as a ``resin filling region'', and a region in the cavity 12a other than the resin filling region (that is, the first thermosetting resin composition The area in the cavity 12a not filled by the layer 102) is referred to as a &quot;non-resin filling area&quot;.

In the step (A1), the height h _A of the cavity of the circuit board before vacuum lamination of the first adhesive film (Fig. 4A) and the non-resin filling region of the cavity of the circuit board after vacuum lamination of the first adhesive film height (h _B) (Fig. 4b) it is 0.8h and _a is preferred to satisfy the relationship of _B ≤h ≤h _a, and it is more preferable to satisfy the relationship of _{0.85h a ≤h B ≤h a, 0.90h} a it is more preferable to satisfy the relationship of _B ≤h ≤h _a, and it is particularly preferable to satisfy the relationship of 0.95h _a ≤h _B ≤h _a. In the case of h _B <0.8 h _A , there is a tendency that the resin in the resin-filled region tends to move easily when installing the component in the step (B1) described later, and it is difficult to temporarily attach the component to a desired position. In addition, the component tends to protrude out of the cavity, and the pressure is concentrated on the component in the step (C1) to be described later, so that the positional shift of the component is likely to occur. By satisfying the above relationship between h _A and h _B , even when using a thin circuit board, sufficient space for embedding components can be secured, and displacement of components can be effectively suppressed.

In the vacuum lamination of the first adhesive film and the circuit board with the cavity in step (A1), a protective film may be provided on the second main surface of the circuit board with the cavity. As the protective film, it is good to use a film-like temporary attachment material used for temporary attachment of parts in the prior art, for example, the UC series (UV tape for wafer dicing) manufactured by Furukawa Denki Kogyo Co., Ltd. . When a protective film is provided on the second main surface of the circuit board in which the cavity is formed, the substrate may be used for the step (B1) by peeling the protective film after the step (A1).

In addition, the first support may be peeled off before the step of installing a conductor layer (circuit wiring) on the insulating layer obtained by curing the first thermosetting resin composition layer, for example, between steps (C1) and (D1) described later. It may be peeled off, or may be peeled off after the process (D1) mentioned later. In a suitable embodiment, the first support is peeled after the step (D1) described later. On the other hand, in the case of using a metal foil such as copper foil as the first support, since it is possible to provide a conductor layer (circuit wiring) using such a metal foil as described later, the first support does not need to be peeled off.

-Step (B1)-

In step (B1), the component 15 is temporarily attached to the first thermosetting resin composition layer 102 in the cavity 12a (Fig. 4C). That is, the component 15 is temporarily attached to the first thermosetting resin composition layer 102 exposed in the cavity 12a.

As the component 15, an appropriate electrical component may be selected according to desired characteristics, and examples thereof include passive components such as capacitors, inductors, and resistors, and active components such as semiconductor bare chips. The same part 15 may be used for all cavities, or different parts 15 may be used for each cavity.

As described above, in the prior art, the temporary attachment of the parts was performed using a temporary attachment material to be peeled off in a later step. In such a technique, in order to prevent the component from falling off when the temporary adhesive material is peeled off or the position of the component in the cavity, a thermosetting resin composition layer is provided on the main surface opposite to the main surface on which the temporary adhesive material is installed. , After filling the inside of the cavity with a thermosetting resin composition, the thermosetting resin composition was thermosetted to form a cured body (insulating layer). However, in such a technique, in the case of using a circuit board with a high cavity density or a circuit board with a thin thickness to achieve miniaturization and thickness reduction of a circuit board with built-in components, in the step of forming an insulating layer on one main surface of the circuit board. In some cases, the substrate warpage occurred. On the other hand, in the present invention, a component is temporarily attached to the thermosetting resin composition layer which later becomes the insulating layer. Therefore, in the present invention, it is not necessary to peel off and remove the temporary attachment material, and the problem of substrate warpage accompanying the prior art can be advantageously solved.

In the step (B1), the part is held by the first thermosetting resin composition layer due to the surface adhesion of the first thermosetting resin composition layer in the cavity. From the viewpoint of the surface adhesion of the first thermosetting resin composition layer, it is preferable to perform step (B1) under heating conditions. As a method of heating, for example, a method of bonding a heating member to the first support and heating it may be mentioned. The heating member may be directly bonded to the first support, or may be bonded to the first support through an elastic material such as heat-resistant rubber.

The heating conditions in step (B1) are not particularly limited as long as the surface of the first thermosetting resin composition layer in the cavity can exhibit sufficient adhesiveness. In one suitable embodiment, the heating temperature in the step (B1) is preferably 60°C or higher, more preferably 70°C or higher, still more preferably 80 from the viewpoint of the adhesiveness of the first thermosetting resin composition layer. It is at least 90°C, more preferably at least 90°C. The upper limit of the heating temperature is preferably 140° C. or less, more preferably 135° C. or less, and still more preferably 130° C. or less from the viewpoint of preventing and suppressing the curing of the substrate due to curing of the first thermosetting resin composition layer. . The heating temperature in step (B1) refers to the surface temperature of the heating member when heating is performed using a heating member from the first support side.

The heating time in the step (B1) may be sufficient time to temporarily attach the parts, and is preferably 2 seconds or longer, more preferably 3 seconds or longer, and still more preferably 4 seconds or longer. The upper limit of the heating time can be usually 60 seconds or less.

The heat treatment in step (B1) is preferably performed under atmospheric pressure (under normal pressure).

In a suitable embodiment, the curvature of the substrate obtained in step (B1) is preferably 25 mm or less, more preferably 20 mm or less, still more preferably 15 mm or less, even more preferably 10 mm or less, particularly preferably 5 mm or less. to be. On the other hand, the curvature of the substrate is the arithmetic of the vertical height of both ends of the opposite side of the substrate from a virtual vertical plane when one side of the substrate obtained in step (B1) is fixed with a fixture and suspended perpendicularly to the ground (horizontal plane). Means the average value. The warpage of the substrate can be specifically measured by the measurement method described in Examples.

After step (B1), you may further heat the 1st thermosetting resin composition layer. Thereby, the positional shift of the part in the process (C1) mentioned later can be further suppressed. Therefore, in a suitable embodiment, the method of the present invention includes a step of heating the first thermosetting resin composition layer (B1') between the step (B1) and the step (C1).

The heating temperature in step (B1') is preferably 80°C or higher, more preferably 90°C or higher, and still more preferably 100°C from the viewpoint of suppressing the positional displacement of the part in step (C1). That's it. The upper limit of the heating temperature is preferably less than 150° C., more preferably 140° C. or less, further preferably 130° C. or less, from the viewpoint of preventing and suppressing the curing of the substrate due to curing of the first thermosetting resin composition layer. Even more preferably, it is 120 degreeC or less.

The heating time in step (B1') is preferably 30 seconds or more, more preferably 1 minute or more, and still more preferably 3 minutes from the viewpoint of suppressing the positional displacement of the parts in step (C1). It is more than, even more preferably, 5 minutes or more, 10 minutes or more, or 20 minutes or more. The upper limit of the heating time can be usually 60 minutes or less from the viewpoint of preventing and suppressing the warpage of the substrate due to curing of the first thermosetting resin composition layer.

It is preferable to perform the heat treatment in step (B1') under atmospheric pressure (under normal pressure).

When step (B1) is carried out under heating conditions, after step (B1), it may proceed to step (B1') as it is, or may proceed to step (B1') after cooling the circuit board to room temperature (room temperature).

-Step (C1)-

In step (C1), the second adhesive film 200 is vacuum-laminated on the second main surface of the circuit board so that the second thermosetting resin composition layer 202 is bonded to the second main surface of the circuit board (Fig. 4D). ).

In this step (C1), the second thermosetting resin composition layer 202 is filled in the cavity 12a, and the component 15 temporarily attached in the cavity 12a is attached to the second thermosetting resin composition layer 202. It will be buried (Fig. 4e).

From the viewpoint of suppressing the positional displacement of the part, it is important to perform step (C1) on a condition where the heating temperature of the first adhesive film surface is lower than the heating temperature of the second adhesive film surface.

When the heating temperature of the surface of the first adhesive film is T ₁ (° C.) and the heating temperature of the surface of the second adhesive film is T ₂ (° C.), T ₁ and T ₂ are from the viewpoint of suppressing the positional displacement of the part, preferably T ₂ -40≤T ₁ ≤T ₂ -10 relationship, and more preferably the relationship of T ₂ -40≤T ₁ ≤T ₂ -15, more preferably T ₂ ≤T ₁ -35≤T it is the relation of _2-15, more preferably more preferably satisfies the relationship T ₂ -35≤T ₁ ≤T ₂ -20.

The heating temperature (T ₂ ) of the surface of the second adhesive film is preferably 120° C. or higher, more preferably 125° C. or higher, further preferably 130° C. from the viewpoint of realizing sufficient part embedding and cavity filling. It is above, 135 degreeC or more, 140 degreeC or more, or 145 degreeC or more. The upper limit of T ₂ is preferably 200°C or less, and more preferably 180°C or less from the viewpoint of suppressing the positional displacement of the part.

The heating temperature (T ₁ ) of the first adhesive film surface is not particularly limited as long as T ₁ and T ₂ satisfy the above relationship, but from the viewpoint of suppressing the positional displacement of the part, it is preferably less than 140°C, more preferably Preferably, it is 135°C or less, more preferably 130°C or less, particularly preferably 125°C or less, 120°C or less, or 115°C or less. The lower limit of T _1, can be in a not particularly limited, usually, less than 60 ℃ of the T ₁ and T ₂ satisfy the above relationship.

In the present invention, the heating temperature (T ₁ ) (°C) of the surface of the first adhesive film refers to the surface temperature of the heat-pressed member bonded to the surface of the first adhesive film, and when pressing is performed through an elastic material such as heat-resistant rubber. E refers to the surface temperature of the elastic material bonded to the first adhesive film. In addition, the heating temperature (T ₂ ) (°C) of the surface of the second adhesive film refers to the surface temperature of the heat-pressed member bonded to the surface of the second adhesive film, and when pressing through an elastic material such as heat-resistant rubber, 2 It refers to the surface temperature of the elastic material bonded to the adhesive film.

The vacuum lamination of the second adhesive film 200 in the step (C1) may employ the same method and conditions as the vacuum lamination of the first adhesive film in the step (A1) except for the temperature condition. In addition, from the viewpoint of suppressing the occurrence of voids, the vacuum evacuation time in the step (C1) is preferably 20 seconds or more, more preferably 30 seconds or more, 40 seconds or more, 50 seconds or more, or 60 seconds or more. In particular, when the elapsed time from performing step (A1) until performing step (C1) is long, the vacuum evacuation time in step (C1) is lengthened (e.g., 30 seconds or more, 40 seconds or more. , 50 seconds or more or 60 seconds or more), it is possible to effectively suppress the occurrence of voids in the insulating layer.

In the step (C1), the melt viscosity of the first thermosetting resin composition layer is preferably 2000 poise or more, more preferably 3000 poise or more, further preferably 4000 poise or more, from the viewpoint of suppressing the positional displacement of parts. , Still more preferably 5000 poise or more, particularly preferably 6000 poise or more, 7000 poise or more, 8000 poise or more, 9000 poise or more, or 10000 poise or more. By adopting the above temperature conditions, it is possible to maintain the melt viscosity of the first thermosetting resin composition layer in such a range while realizing sufficient component embedding and cavity filling properties by the second thermosetting resin composition layer. The upper limit of the melt viscosity of the first thermosetting resin composition layer in the step (C1) is not particularly limited, but is usually 1000000 poise or less.

The melt viscosity of the first thermosetting resin composition layer in step (C1) can be obtained by performing dynamic viscoelasticity measurement at a temperature (T ₁ ) (°C). Measurement devices that can be used for measurement are as described above.

The configuration of the second adhesive film 200 is as described above. In addition, the second support 201 of the second adhesive film 200 used in the step (C1) may be the same as the first support 101 of the first adhesive film 100 used in the step (A1), It may be different.

Further, the resin composition used for the second thermosetting resin composition layer may be the same as or different from the resin composition used for the first thermosetting resin composition layer.

According to the method of the present invention using a thermosetting resin composition layer (i.e., a first thermosetting resin composition layer) that becomes an insulating layer later as a temporary attachment material for a component, the cavity density is increased in order to achieve miniaturization and thickness reduction of the circuit board in which the component is built. Even when a high circuit board or a thin circuit board is used, it is possible to suppress the occurrence of substrate warpage. For this reason, the process (C1) can be performed smoothly, without causing a problem in conveying the substrate from the process (B1) to the process (C1). Further, in the present invention in which the step (C1) is performed under the specific temperature conditions, the positional shift of the parts can also be suppressed due to the vacuum lamination in the step (C1), and a circuit board with a built-in component with excellent component placement accuracy is provided. It can be realized with good manufacturing yield.

After the step (C1), by pressing under normal pressure (under atmospheric pressure), for example, a heat-pressing member from the second support 202 side or from both sides of the first support 102 and the second support 202 , It is preferable to perform a step of smoothing both sides of the laminated first adhesive film side and the second adhesive film side (hereinafter, also referred to as "step (C1')"). Therefore, in a suitable embodiment, the method of the first embodiment of the present invention is to smooth both surfaces of the first adhesive film side and the second adhesive film side by hot pressing between the step (C1) and the step (D1). Including the process. The press conditions in the step (C1') can be set to the same conditions as the heat-pressing conditions in the step (C1).

Step (C1') can be performed by a commercially available laminator. On the other hand, step (C1) and step (C1') may be performed continuously using the commercially available vacuum laminator described above.

In one suitable embodiment, in the step (C1) (and the step (C1')), the positional shift of the part is less than 40 μm. Here, the positional shift of the part means after vacuum lamination of the center of the part at the time of temporary attachment to the first thermosetting resin composition layer in step (B1) and the second thermosetting resin composition layer in step (C1) (step (C1) In the case of performing'), it refers to a change in position with the center of the part after smoothing treatment). The positional shift of the part can be measured specifically by the measuring method described in Examples.

In addition, the second support 201 may be peeled before the step of installing a conductor layer (circuit wiring) on the insulating layer obtained by curing the second thermosetting resin composition layer, for example, step (C1) and step ( You may peel off between D1), and you may peel after process (D1) mentioned later. In one suitable embodiment, the second support is peeled off after the step (D1) described later. On the other hand, in the case of using a metal foil such as copper foil as the second support, since it is possible to provide a conductor layer (circuit wiring) using such a metal foil as described later, the second support does not need to be peeled off.

-Process (D1)-

In step (D1), the first and second thermosetting resin composition layers are thermally cured to form an insulating layer. Thereby, the 1st thermosetting resin composition layer 102 forms the insulating layer 102', and the 2nd thermosetting resin composition layer 202 forms the insulating layer 202', respectively (FIG. 4F).

The conditions for thermal curing are not particularly limited, and conditions generally employed when forming the insulating layer of the printed wiring board may be used.

For example, the thermosetting conditions of the first and second thermosetting resin composition layers are also different depending on the composition of the resin composition used for each thermosetting resin composition layer, but the curing temperature is in the range of 120 to 240°C (preferably 150 To 210°C, more preferably 170 to 190°C), and the curing time may be in the range of 5 to 90 minutes (preferably 10 to 75 minutes, more preferably 15 to 60 minutes).

Before thermosetting, the first and second thermosetting resin composition layers may be preheated at a temperature lower than the curing temperature. For example, prior to thermal curing, at a temperature of 50°C or more and less than 120°C (preferably 60°C or more and 110°C or less, more preferably 70°C or more and 100°C or less), the first and second thermosetting resin composition layers You may preheat for 5 minutes or more (preferably 5 to 150 minutes, more preferably 15 to 120 minutes). When performing preheating, it is assumed that such preheating is also included in step (D1).

It is preferable to perform thermosetting of the 1st and 2nd thermosetting resin composition layers in process (D1) under atmospheric pressure (under normal pressure).

It is preferable to perform process (D1) in the state which held the board|substrate substantially horizontally. For example, it is preferable to perform step (D1) in a state in which the axis in the thickness direction of the substrate is in the range of 80 to 100° with respect to the horizontal plane.

As described above, it is preferable to peel the first and second supports after the step (D1). Therefore, in the step (D1), it is preferable to thermoset the first and second thermosetting resin composition layers in a state where the first and second supports are attached. Thereby, an insulating layer having a low-illuminance surface can be obtained.

In one suitable embodiment, between the step (C1) and the step (D1), a treatment for cooling the circuit board to room temperature (room temperature) may be performed.

In addition, in the following description, the insulating layer 102' obtained by thermosetting the 1st thermosetting resin composition layer 102 may be called a "first insulating layer." In addition, the insulating layer 202 ′ obtained by thermosetting the second thermosetting resin composition layer 202 is sometimes referred to as a “second insulating layer”.

-Other processes-

The method of the first embodiment of the present invention may further include a step of (E1) drilling and (F1) a step of forming a conductor layer on the insulating layer. These steps (E1) and (F1) may be performed according to various methods known to those skilled in the art used for manufacturing a printed wiring board. On the other hand, when peeling the first and second supports after the step (D1), the peeling of the first and second supports is performed between the steps (D1) and (E1), or between the steps (E1) and (F1). It is good to carry out.

Step (E1) is a step of drilling. Thereby, holes such as via holes and through holes can be formed. In one suitable embodiment, step (E1) includes forming via holes in the first and second insulating layers. For example, a via hole may be formed in the first and second insulating layers using a drill, laser, plasma, or the like.

From the viewpoint of being able to protect the surface of the insulating layer at the time of hole formation, it is preferable to perform the step (E1) before peeling the first and second supports. In this case, for example, by irradiating laser light from above the support, holes such as via holes and through holes may be formed. Further, for the purpose of improving laser processability, a support containing a laser absorbing material suitable for the wavelength of the laser to be used may be used. The opening diameter and opening shape of holes such as via holes and through holes may be appropriately determined according to the design of the circuit wiring.

In the case of forming a hole with a laser, examples of the laser light source include carbon dioxide laser, YAG laser, excimer laser, and the like. Among these, a carbon dioxide gas laser is preferable from the viewpoint of processing speed and cost.

Step (F1) is a step of forming a conductor layer on the insulating layer.

The conductor material used for the conductor layer is not particularly limited. In a suitable embodiment, the conductor layer contains at least one metal selected from the group consisting of gold, platinum, palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin and indium. . The conductor layer may be a single metal layer or an alloy layer, and the alloy layer is, for example, an alloy of two or more metals selected from the above group (e.g., nickel-chromium alloy, copper-nickel alloy, and copper-titanium alloy. ) Formed by. Among these, from the viewpoints of versatility, cost, and ease of patterning for forming a conductor layer, a monometallic layer of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver or copper, or a nickel-chromium alloy, or a copper-nickel alloy , An alloy layer of a copper-titanium alloy is preferable, a single metal layer of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver or copper, or an alloy layer of a nickel-chromium alloy is more preferable, and a single metal layer of copper This is more preferable.

The conductor layer may have a single-layer structure or a multilayer structure in which two or more layers of a single metal layer or an alloy layer made of different types of metals or alloys are stacked. When the conductor layer has a multilayer structure, the layer in contact with the insulating layer is preferably a monometallic layer of chromium, zinc or titanium, or an alloy layer of a nickel-chromium alloy.

The thickness of the conductor layer depends on the design of the desired component-embedded circuit board, but is generally 3 to 35 μm, preferably 5 to 30 μm.

In one embodiment, the step (F1),

Roughening the insulating layer, and

It includes forming a conductor layer by plating on the harmonized insulating layer.

The procedure and conditions of the roughening treatment are not particularly limited, and known procedures and conditions commonly used in the manufacture of a printed wiring board can be adopted. For example, the first and second insulating layers can be roughened by performing a swelling treatment with a swelling liquid, a roughening treatment with an oxidizing agent, and a neutralization treatment with a neutralizing liquid in this order. Although it does not specifically limit as a swelling liquid, An alkali solution, a surfactant solution, etc. are mentioned, Preferably it is an alkali solution, As said alkali solution, a sodium hydroxide solution and a potassium hydroxide solution are more preferable. As a commercially available swelling liquid, Atotech Japan Co., Ltd. swelling dip securigant P, swelling dip securigant SBU, etc. are mentioned, for example. The swelling treatment with the swelling liquid is not particularly limited, but can be performed by immersing the first and second insulating layers in a swelling liquid of 30 to 90°C for 1 to 20 minutes, for example. From the viewpoint of controlling the swelling of the resin of the first and second insulating layers to a suitable level, it is preferable to immerse the first and second insulating layers in a swelling liquid of 40 to 80°C for 5 seconds to 15 minutes. Although it does not specifically limit as an oxidizing agent, For example, an alkaline permanganic acid solution in which potassium permanganate or sodium permanganate is dissolved in an aqueous solution of sodium hydroxide is mentioned. The roughening treatment with an oxidizing agent such as an alkaline permanganic acid solution is preferably performed by immersing the first and second insulating layers in the oxidizing agent solution heated at 60 to 80°C for 10 to 30 minutes. Further, the concentration of permanganate in the alkaline permanganic acid solution is preferably 5 to 10% by mass. Examples of commercially available oxidizing agents include alkaline permanganic acid solutions such as Atotech Japan Co., Ltd. concentrate compact CP and dosing solution Securigant P. In addition, an acidic aqueous solution is preferable as the neutralizing liquid, and as a commercial item, reduction solutions manufactured by Atotech Japan Co., Ltd. and Securigant P are mentioned. Treatment with the neutralizing liquid can be performed by immersing the treated surface on which the roughening treatment with the oxidizing agent solution has been performed in the neutralizing liquid at 30 to 80°C for 5 to 30 minutes. From the standpoint of workability and the like, a method of immersing the object subjected to the roughening treatment with an oxidizing agent solution in a neutralization solution of 40 to 70°C for 5 to 20 minutes is preferable.

The method of forming the conductor layer is not particularly limited as long as the conductor layer (circuit wiring) having a desired pattern can be formed. For example, it is possible to form a conductor layer (circuit wiring) having a desired pattern by plating on the surfaces of the first and second insulating layers by conventionally known techniques such as a semiadditive method and a positive method. Hereinafter, an example of forming a conductor layer by a semiadditive method is shown.

First, a plating seed layer is formed on the surfaces of the first and second insulating layers by electroless plating. Subsequently, on the formed plating seed layer, a mask pattern for exposing a part of the plating seed layer corresponding to a desired wiring pattern is formed. On the exposed plating seed layer, a metal layer is formed by electrolytic plating, and then the mask pattern is removed. After that, the unnecessary plating seed layer is removed by etching or the like, so that a conductor layer having a desired pattern can be formed.

When a metal foil such as copper foil is used as the first and second supports, a conductor layer may be formed by a subtractive method or the like using this metal foil. Further, a conductor layer may be formed by electrolytic plating using a metal foil as a plating seed layer.

Conductors (wirings) are also formed in holes such as via holes by these processes, circuit wiring 13 provided on the surfaces of the first insulating layer 102' and the second insulating layer 202', and circuit wiring of a circuit board And the components are electrically connected, and a component-embedded circuit board 1000 is obtained (Fig. 4G). In addition, as long as electrical connection occurs, the inside of the hole such as a via hole need not be filled with a conductor, and a thin layer of conductor may be formed to coat the wall surface of the hole.

The method of the first embodiment of the present invention may further include the step of (G1) reorganizing the circuit board with a built-in component.

In step (G1), for example, the structure obtained by grinding by a conventionally known dicing apparatus equipped with a rotating blade can be divided into individual parts-embedded circuit board units.

As described above, the method of the first embodiment of the present invention has been described based on a preferred embodiment, but each of the steps (A1) to (D1) is included, and each of the steps (A1) to (D1) is As long as it is carried out in order, the method of the first embodiment of the present invention is not limited to the embodiments specifically shown above. For example, step (G1) may be performed between step (C1) and step (D1), between step (D1) and step (E1), or between step (E1) and step (F1). Further, steps (A1) to (F1) may be repeated to further achieve multilayer wiring. A number of modifications can be considered to the method of the first embodiment of the present invention.

<Method of the second embodiment>

In the method of the second embodiment of the present invention, an insulating substrate is used as the inner layer substrate.

As described above, in manufacturing a component-embedded wiring board, it is common to use a circuit board as an inner layer board. In an embodiment in which a circuit board is used as the inner layer substrate, in general, components are placed inside the circuit board, and then an insulating layer and a conductor layer are sequentially stacked to obtain a component-embedded wiring board with multilayer wiring. In this regard, depending on the electronic device, a wiring board (a two-layer wiring board) in which circuits are formed only on both sides of an insulating board may be employed. In such a case, the inventors of the present invention conceived of obtaining a two-layer wiring board that is more functional and capable of miniaturization by arranging components inside an insulating substrate and then forming an insulating layer and a conductor layer.

Thus, the method of the second embodiment of the present invention includes the following steps (A2), (B2), (C2) and (D2) in this order:

(A2) a first comprising a first support and a first thermosetting resin composition layer bonded to the first support on an insulating substrate having first and second main surfaces and having a cavity penetrating between the first and second main surfaces 1 Step of vacuum laminating the adhesive film so that the first thermosetting resin composition layer is bonded to the first main surface of the insulating substrate

(B2) Process of temporarily attaching parts to the first thermosetting resin composition layer in the cavity

(C2) A second adhesive film comprising a second support and a second thermosetting resin composition layer bonded to the second support on the second main surface of the insulating substrate, and the second thermosetting resin composition layer is the second main surface of the insulating substrate. As a process of vacuum laminating so as to bond with, the process of vacuum laminating under conditions where the heating temperature of the first adhesive film surface is lower than the heating temperature of the second adhesive film surface

(D2) Step of forming an insulating layer by thermosetting the first and second thermosetting resin composition layers.

Steps (A2), (B2), (C2), and (D2) in the second embodiment of the present invention are basically the first of the present invention, except that an insulating substrate is used as an inner layer substrate in which a component is embedded. It corresponds to the steps (A1), (B1), (C1) and (D1) in the embodiment, respectively. Advantageous effects of the present invention described with respect to the steps (A1), (B1), (C1) and (D1) in the method of the first embodiment of the present invention are the steps in the method of the second embodiment of the present invention. In (A2), (B2), (C2) and (D2), it is similarly achieved. In addition, the advantageous effects of the present invention explaining steps (A2), (B2), (C2) and (D2) in the method of the second embodiment of the present invention are compared to the method of the first embodiment of the present invention. It is similarly achieved also in the steps (A1), (B1), (C1) and (D1).

Hereinafter, each step of the method of the second embodiment of the present invention will be described with reference to Figs. 5A to 5G.

-Step (A2)-

In step (A2), the first adhesive film 100 is vacuum-laminated on the insulating substrate 21 ′ with the cavity formed so that the first thermosetting resin composition layer 102 is bonded to the first main surface of the insulating substrate ( Figure 5a).

The configurations of the insulating substrate 21 ′ having the cavity formed and the first adhesive film 100 are as described above.

The vacuum lamination of the first adhesive film 100 onto the insulating substrate 21 ′ in which the cavity is formed can be carried out in the same procedure and conditions as in the step (A1) in the method of the first embodiment of the present invention.

In such a step (A2), the first thermosetting resin composition layer 102 is bonded to the first main surface of the insulating substrate 21' in which the cavity is formed (Fig. 5B). At that time, the first thermosetting resin composition layer 102 is also filled in a partial region within the cavity 21a of the insulating substrate (Fig. 5B).

In step (A2), the height h _A of the cavity of the insulating substrate before vacuum lamination of the first adhesive film (Fig. 5A) and the non-resin filling region of the cavity of the insulating substrate after vacuum lamination of the first adhesive film The height h _B (Fig. 5B) preferably satisfies the same relationship as the relationship between hA and hB described with respect to the step (A1) in the method of the first embodiment of the present invention. Thereby, even when a thin insulating substrate is used, a sufficient space for incorporating components can be secured, and displacement of components can be effectively suppressed.

In addition, the first support may be peeled off before the step of installing a conductor layer (circuit wiring) on the insulating layer obtained by curing the first thermosetting resin composition layer, for example, between steps (C2) and (D2) described later. It may be peeled off to or may be peeled off after the step (D2) described later. In a suitable embodiment, the first support is peeled off after the step (D2) described later. In addition, when a metal foil such as copper foil is used as the first support, it is possible to provide a conductor layer (circuit wiring) using such a metal foil as described later, so that the first support does not need to be peeled off.

-Step (B2)-

In step (B2), the component 25 is temporarily attached to the first thermosetting resin composition layer 102 in the cavity 21a (Fig. 5C). That is, the component 25 is temporarily attached to the exposed first thermosetting resin composition layer 102 in the cavity 21a. The component 25 can be similar to the component 15 described with respect to the method of the first embodiment of the present invention.

Step (B2) is preferably carried out under heating conditions, and in this case, heating conditions (heating temperature, heating time, pressure during heating, etc.) are the same as step (B1) in the method of the first embodiment of the present invention. We can do it together. In addition, suitable values of the warpage of the substrate obtained in the step (B2) and the measurement method thereof are as described for the step (B1) in the method of the first embodiment of the present invention.

After the step (B2), it is preferable to perform the step of heating the first thermosetting resin composition layer (step (B2')). The conditions of step (B2') can be the same as step (B1') in the method of the first embodiment of the present invention.

When performing step (B2) under heating conditions, after step (B2), you may proceed to step (B2') as it is, or may proceed to step (B2') after cooling the substrate to room temperature (room temperature).

-Process (C2)-

In step (C2), the second adhesive film 200 is vacuum-laminated on the second main surface of the insulating substrate so that the second thermosetting resin composition layer 202 is bonded to the second main surface of the insulating substrate (Fig. 5D ).

In this step (C2), the second thermosetting resin composition layer 202 is filled in the cavity 21a, and the component 25 temporarily attached in the cavity 21a is attached to the second thermosetting resin composition layer 202. It will be buried (Fig. 5e).

From the viewpoint of suppressing the positional displacement of the part, it is important to perform step (C2) on a condition in which the heating temperature of the first adhesive film surface is lower than that of the second adhesive film surface.

Conditions of step (C2) (appropriate relationship between the heating temperature of the first adhesive film surface (T ₁ ) (°C) and the heating temperature of the second adhesive film surface (T ₂ ) (°C), a suitable range of T ₁ , T ₂ The suitable range of, vacuum evacuation time, melt viscosity of the first thermosetting resin composition, etc.) can be carried out in the same manner as in step (C1) in the method of the first embodiment of the present invention.

The configuration of the second adhesive film 200 is as described above. In addition, the second support 201 of the second adhesive film 200 used in the step (C2) may be the same as the first support 101 of the first adhesive film 100 used in the step (A2), It may be different. In addition, the resin composition used for the second thermosetting resin composition layer 202 used in the step (C2) may be the same as or different from the resin composition used for the first thermosetting resin composition layer in the step (A2).

According to the method of the second embodiment of the present invention using a thermosetting resin composition layer (i.e., a first thermosetting resin composition layer) that will later become an insulating layer as a temporary attachment material for a component, miniaturization and thinning of the component-embedded substrate are achieved. For this reason, even when an insulating substrate having a high cavity density or an insulating substrate having a thin thickness is used, the occurrence of substrate warpage can be suppressed. For this reason, the process (C2) can be performed smoothly, without causing an obstacle to the board|substrate conveyance from process (B2) to process (C2). In addition, in the method of the second embodiment of the present invention in which the step (C2) is carried out under the specific temperature condition, the positional shift of the parts caused by the vacuum lamination in the step (C2) can be suppressed, and the placement of the parts A component-embedded board with excellent precision can be realized with good manufacturing yield.

In a preferred embodiment, the method of the second embodiment of the present invention is a step of smoothing both surfaces of the first adhesive film side and the second adhesive film side by hot pressing between the step (C2) and the step (D2). (Step (C2')) is included. The conditions of step (C2') can be the same as that of step (C1') in the method of the first embodiment of the present invention.

In one suitable embodiment, the positional shift of the part in the step (C2) (and the step (C2')) is less than 40 μm. The definition of the positional displacement of the part and the measurement method are the same as those described for the step (C1) (and step (C1')) in the method of the first embodiment of the present invention.

In addition, the second support 201 may be peeled off before the step of providing a conductor layer (circuit wiring) to the insulating layer obtained by curing the second thermosetting resin composition layer, for example, step (C2) and the step ( You may peel between D2), and you may peel after process (D2) mentioned later. In one suitable embodiment, the second support is peeled off after the step (D2) described later. In addition, when a metal foil such as a copper foil is used as the second support, since it is possible to provide a conductor layer (circuit wiring) using such a metal foil as described later, the second support does not need to be peeled off.

-Process (D2)-

In step (D2), the first and second thermosetting resin composition layers are thermally cured to form an insulating layer. Thereby, the 1st thermosetting resin composition layer 102 forms the insulating layer 102', and the 2nd thermosetting resin composition layer 202 forms the insulating layer 202', respectively (FIG. 5F).

The conditions of thermal curing in step (D2) (curing temperature, curing time, pressure at the time of curing, presence or absence of preheating, and conditions thereof, conditions for arranging the substrate at the time of curing, etc.) are the method of the first embodiment of the present invention. In the same manner as in step (D1).

As described above, it is preferable that the first and second supports are peeled after step (D2). Therefore, in the step (D2), it is preferable to thermoset the first and second thermosetting resin composition layers with the first and second supports attached thereto. Thereby, an insulating layer having a low-illuminance surface can be obtained.

In one suitable embodiment, between the step (C2) and the step (D2), a treatment for cooling the insulating substrate to room temperature (room temperature) may be performed.

In addition, in the following description, the substrate obtained in the step (D2) is sometimes referred to as a "component-embedded insulating substrate".

-Other processes-

The method of the second embodiment of the present invention may further include (E2) a step of drilling, and (F2) a step of forming a conductor layer on the insulating layer. These steps (E2) and (F2) may be performed according to various methods known to those skilled in the art used for manufacturing a printed wiring board, for example, steps (E1) and ( It can be done as in F1). In one suitable embodiment, step (E2) includes forming a through hole.

Conductors (wirings) are formed in holes such as through holes by these processes, and circuit wirings 23 provided on the surface of the first insulating layer 102 ′ and circuits provided on the surfaces of the second insulating layer 202 ′ The wiring 23 and the component 25 are electrically connected, and the component-embedded board 2000 is obtained (Fig. 5G). As long as electrical connection is effected, the inside of the hole such as through hole need not be filled with a conductor, and a thin layer of conductor may be formed to coat the wall surface of the hole.

In the method of the second embodiment of the present invention, a two-layer wiring board can be manufactured by forming a fine conductor (wiring) by plating on an insulating layer having a low surface roughness (the value of the surface roughness will be described later. ). In addition to embedding a component in an insulating substrate, the method of the second embodiment of the present invention enables fine wiring while increasing the mounting amount of the component. Compared to the conventional two-layer wiring board, it is remarkably high-function and small-sized 2 A layer wiring board (hereinafter, also referred to as a "part-embedded two-layer wiring board") can be realized.

The method of the second embodiment of the present invention may further include (G2) a step of reorganizing the component-embedded substrate into pieces. Step (G2) may be carried out in the same manner as step (G1) in the method of the first embodiment of the present invention.

As described above, the method of the second embodiment of the present invention has been described based on a preferred embodiment for manufacturing a component-embedded two-layer wiring board, but includes each of the steps (A2) to (D2), and further includes the steps (A2). ) To (D2) are performed in this order, the method of the second embodiment of the present invention is not limited to the embodiments specifically shown above. For example, after performing the steps (A2) to (D2), the step of forming a conductor layer (i.e., the step (F2)) and the step of forming an insulating layer are repeated, and a component-embedded wiring board having a multilayer wiring You may manufacture. The step of forming the insulating layer may be carried out according to a conventionally known arbitrary method at the time of manufacturing the printed wiring board, for example, may be carried out in the same manner as in the above steps (C2) and (D2). Further, the step (G2) may be performed between the step (C2) and the step (D2), between the step (D2) and the step (E2), or between the step (E2) and the step (F2). A number of modifications can be considered to the method of the second embodiment of the present invention.

[Insulation board with built-in parts]

Conventionally, when manufacturing a component-embedded wiring board, it is common to use a circuit board as an inner layer board. On the other hand, in the method of the second embodiment of the present invention, a component-embedded wiring board is manufactured by incorporating a component into an insulating substrate. Hereinafter, in the method of the second embodiment of the present invention, a component-embedded insulating substrate obtained in step (D2) will be described.

Insulation board with built-in components,

An insulating substrate having first and second main surfaces and having a cavity penetrating between the first and second main surfaces;

A first insulating layer bonded to the first main surface of the insulating substrate,

A second insulating layer bonded to the second main surface of the insulating substrate,

Includes a component installed on the first insulating layer so as to be accommodated in the interior of the cavity of the insulating substrate,

It is characterized in that the second insulating layer fills the cavity of the insulating substrate so that the component is filled.

The insulating substrate with the cavity, the thermosetting resin composition for forming the first and second insulating layers, and the parts are as described above.

The first insulating layer and the second insulating layer may have different compositions or the same composition. In a case where the first insulating layer and the second insulating layer have the same composition or the like, the first insulating layer and the second insulating layer do not show a clear interface and may be continuously integrated.

The thickness of the component-embedded insulating board is preferably thinner, preferably 400 µm or less, more preferably 300 µm or less, still more preferably 200 µm or less, even more preferably from the viewpoint of thinning the component-embedded wiring board. Is 150 µm or less, particularly preferably 100 µm or less. The lower limit of the thickness of the component-embedded insulating substrate is not particularly limited, but may generally be 30 µm or more, 50 µm or more, or 80 µm or more.

In the component-embedded insulating substrate, the pitch between components corresponds to the pitch between the cavities 21a described above. Specifically, the pitch between components in the component-embedded insulating substrate is preferably 10 mm or less, more preferably 9 mm or less, still more preferably 8 mm or less, even more preferably 7 mm or less, and particularly preferably 6 mm or less. . The lower limit of the pitch between parts is usually 1mm or more, 2mm or more. The pitch between components does not need to be the same across the component-embedded insulating substrate, but may be different.

A component-embedded wiring board such as a component-embedded two-layer wiring board can be manufactured by forming holes such as through holes and a conductor layer in the component-embedded insulating substrate.

From the viewpoint of fine wiring, the component-embedded insulating substrate preferably has an arithmetic mean roughness (Ra) of the surface after the roughening treatment is 350 nm or less, more preferably 300 nm or less, further preferably 250 nm or less, even more preferably 200 nm or less, , 180 nm or less, 160 nm or less, 140 nm or less, 120 nm or less, 100 nm or less, or 80 nm or less is particularly preferred. The lower limit of the arithmetic mean roughness Ra is not particularly limited, and is 20 nm, 40 nm, or the like.

Meanwhile, the arithmetic mean roughness (Ra) can be measured using a non-contact type surface roughness machine. As a specific example of the non-contact type surface roughness machine, "WYKO NT3300" manufactured by Bcoin Instruments is mentioned.

[2-layer wiring board with built-in parts]

In the method of the second embodiment of the present invention, a component-embedded two-layer wiring board can be suitably manufactured.

In one embodiment, the component-embedded two-layer wiring board,

First and second conductor layers,

A component-embedded insulating substrate bonded to the first and second conductor layers and provided between the first and second conductor layers;

And an interlayer connecting body electrically connecting the first and second conductor layers.

The conductor layer and the component-embedded insulating substrate are as described above.

The interlayer connection body is not particularly limited as long as the first and second conductor layers can be electrically connected, for example, a connection body formed by filling a through hole with a conductor, and a connection formed by coating a thin layer of a conductor on the wall of the through hole. A sieve can be mentioned.

In the method of the second embodiment of the present invention, since the conductor layer is formed by plating on the insulating layer having a low surface roughness, a component-embedded two-layer wiring board having fine wiring can be obtained. For example, a component having fine wiring with a line/space ratio (L/S ratio) of preferably 50/50 μm or less, more preferably 40/40 μm or less, and even more preferably 30/30 μm or less A built-in two-layer wiring board can be formed with good manufacturing yield, and an L/S ratio of 20/20 µm or less, 10/10 µm or less, and a component having fine wiring of 7/7 µm or less can also be produced. It can be formed in good yield.

[Semiconductor device]

A semiconductor device can be manufactured using the component-embedded wiring board manufactured by the method of the present invention.

Examples of such semiconductor devices include various semiconductor devices provided in electric products (for example, computers, mobile phones, digital cameras, televisions, etc.) and vehicles (for example, motorcycles, automobiles, tanks, ships and aircraft, etc.). I can.

[ Example ]

Hereinafter, the present invention will be described in detail by examples, but the present invention is not limited to these examples. In addition, in the following description, "part" and "%" mean "part by mass" and "% by mass", respectively, unless otherwise specified.

First, various measurement methods and evaluation methods will be described.

[Preparation 1 of sample for measurement and evaluation]

(1-1) Preparation of circuit board with cavity

A cavity having a size of 0.8 mm × 1.2 mm penetrating between the first and second main surfaces of the inner circuit board was fabricated in a 5 mm pitch on an inner circuit board having a size of 340 mm × 510 mm (70% residual ratio). As an inner circuit board, a glass cloth-based epoxy resin double-sided copper-clad laminate with an inner layer circuit formed thereon (the thickness of the copper foil on one side is 12 µm, the thickness of the board (=height of the cavity (h _A )) 100 µm, the total thickness 124 µm, A thermal expansion coefficient of 7 ppm, a glass transition temperature of 230° C. of the substrate, and "832NSR-LC" manufactured by Mitsubishi Gas Chemical Co., Ltd.) were used. Subsequently, both surfaces of the inner circuit board in which the cavity was formed were etched by 1 µm by "CZ8100" manufactured by MEC Co., Ltd. to perform roughening treatment on the copper surface. Let the obtained substrate be "substrate (a1)".

(1-2) vacuum lamination of the first adhesive film

The protective film was peeled from the 1st adhesive film produced in the following production example. Thereafter, the first adhesive film was applied using a batch-type vacuum pressurized laminator ("MVLP-500" manufactured by Meiki Sesakusho Co., Ltd.) so that the first thermosetting resin composition layer contacts the first main surface of the circuit board, Vacuum lamination was performed on the substrate a1. Vacuum lamination of the first adhesive film was performed under reduced pressure for 30 seconds (i.e., vacuum evacuation time of 30 seconds) to reduce the atmospheric pressure to 13 hPa or less, and then the temperature (``Step (A)'') shown in Table 2-1 below, and the pressure of 0.5 MPa. Then, for 30 seconds, a lamination treatment was performed by heat-pressing bonding through a heat-resistant rubber from above the first support. Let the obtained substrate be "substrate (b1)". This step corresponds to step (A) (in detail, step (A1)).

(1-3) Temporary attachment of parts

Thereafter, under the conditions shown in Table 2-1 ("Step (B)"), a component (manufactured by Murata Corporation Co., Ltd., laminated thin film capacitor 1005) on the first thermosetting resin composition layer in the cavity of the substrate (b1) , 1.0mm×0.5mm size, thickness 180㎛) was temporarily attached. This step corresponds to step (B) (in detail, step (B1)).

In addition, with respect to Examples 1-3, 1-4, and Comparative Example 1-2, after temporary attachment of the parts, in the conditions shown in Table 2-1 ("Step (B')"), 1 The thermosetting resin composition layer was heat-treated. This step corresponds to the step (B1').

Let the obtained substrate be "substrate (c1)".

(1-4) vacuum lamination of the second adhesive film

The protective film was peeled from the 2nd adhesive film produced in the following production example. After that, using a batch-type vacuum pressurized laminator ("MVLP-500" manufactured by Meiki Sesakusho Co., Ltd.), the second adhesive film is in contact with the second main surface of the circuit board, Vacuum lamination was carried out on the substrate c1. Vacuum lamination of the second adhesive film is performed under reduced pressure for 30 seconds (i.e., the vacuum evacuation time is 30 seconds) to reduce the atmospheric pressure to 13 hPa or less, and then the heating temperature of the first adhesive film surface (T ₁ ) and the heating temperature of the second adhesive film surface. (T ₂ ) was set to the value shown in Table 2-1 below ("Step (C)"), and the laminate treatment was carried out by heat-pressing bonding at a pressure of 0.74 MPa for 30 seconds through a heat-resistant rubber. This step corresponds to step (C) (in detail, step (C1)).

Further, by hot pressing with a SUS plate for 60 seconds at a pressure of 0.5 MPa under normal pressure, smoothing treatment on both sides of the substrate was performed. The temperature conditions of the smoothing treatment were the same as those of the lamination treatment. The obtained substrate is referred to as "substrate (d1)". This step corresponds to the step (C1').

(1-5) Thermal curing of the first and second thermosetting resin composition layers

The supports derived from the first and second adhesive films were peeled from the substrate d1. Thereafter, the substrate d1 was heated at 100° C. for 30 minutes and then at 180° C. for 30 minutes under normal pressure to heat cure the first and second thermosetting resin composition layers. Thermal curing was performed with the substrate in a horizontal state. In this way, insulating layers were formed on both surfaces of the inner circuit board. This process corresponds to the process (D) (in detail, the process (D1)).

(Preparation 2 of sample for measurement and evaluation)

(2-1) Preparation of an insulating substrate with a cavity

A cavity having a size of 0.8 mm × 1.2 mm penetrating between the first and second main surfaces of the insulating substrate was fabricated in a 5 mm pitch on an insulating substrate having a size of 340 mm × 510 mm. As an insulating substrate, a glass fiber base epoxy resin double-sided copper clad laminate (the thickness of the copper foil on one side is 12 µm, the thickness of the substrate (glass fiber base-epoxy resin-based cured prepreg) (= the height of the cavity (h _A )) 100 µm, the whole A thickness of 124 μm, a coefficient of thermal expansion of 7 ppm of the substrate, a glass transition temperature of 230° C. of the substrate, and “832NSR-LC” manufactured by Mitsubishi Gas Chemical Co., Ltd.) were all removed. Let the obtained substrate be "substrate (a2)".

(2-2) vacuum lamination of the first adhesive film

The protective film was peeled from the 1st adhesive film produced in the following production example. Thereafter, the first adhesive film is applied to the substrate so that the first thermosetting resin composition layer contacts the first main surface of the insulating substrate by using a batch-type vacuum pressurized laminator (MVLP-500 manufactured by Meiki Sesakusho Co., Ltd.). Vacuum lamination was performed on (a2). Vacuum lamination of the first adhesive film was performed under reduced pressure for 30 seconds (i.e., vacuum evacuation time of 30 seconds) to reduce the atmospheric pressure to 13 hPa or less, and then the temperature (``Step (A)'') shown in Table 2-2 below, and the pressure of 0.5 MPa. Then, for 30 seconds, a lamination treatment was performed by heat-pressing bonding through a heat-resistant rubber from above the first support. Let the obtained substrate be "substrate (b2)". This step corresponds to step (A) (in detail, step (A2)).

(2-3) Temporary attachment of parts

Thereafter, under the conditions shown in Table 2-2 ("Step (B)"), on the first thermosetting resin composition layer in the cavity, a component (manufactured by Murata Corporation Co., Ltd. Multilayer Thin Film Capacitor 1005, 1.0 mm × 0.5) mm size, thickness 180㎛) was temporarily attached. This step corresponds to step (B) (in detail, step (B2)).

In addition, with respect to Examples 2-3 and 2-4, after temporary attachment of the parts, in the conditions shown in Table 2-2 ("Step (B')"), a first thermosetting resin composition layer Heat treatment. Let the obtained substrate be "substrate (c2)". This step corresponds to the step (B2').

(2-4) vacuum lamination of the second adhesive film

The protective film was peeled from the 2nd adhesive film produced in the following production example. Thereafter, the second adhesive film is applied to the substrate so that the second thermosetting resin composition layer is in contact with the second main surface of the insulating substrate using a batch-type vacuum pressurized laminator (MVLP-500 manufactured by Meiki Sesakusho Co., Ltd.). Vacuum lamination was performed on (c2). Vacuum lamination of the second adhesive film is performed under reduced pressure for 30 seconds (i.e., vacuum evacuation time of 30 seconds) to reduce the atmospheric pressure to 13 hPa or less, and then the heating temperature of the first adhesive film surface (T ₁ ) and the heating temperature of the second adhesive film surface. (T ₂ ) was set to the value shown in Table 2-2 below ("Step (C)"), and the laminate treatment was performed by heat-pressing bonding at a pressure of 0.74 MPa for 30 seconds through a heat-resistant rubber. This step corresponds to step (C) (in detail, step (C2)).

Further, by hot pressing with a SUS plate for 60 seconds at a pressure of 0.5 MPa under normal pressure, smoothing treatment on both sides of the substrate was performed. The temperature conditions of the smoothing treatment were the same as those of the lamination treatment. The obtained substrate is referred to as "substrate (d2)". This step corresponds to the step (C2').

(2-5) Thermal curing of the first and second thermosetting resin composition layers

The supports derived from the first and second adhesive films were peeled off from the substrate d2. Thereafter, the substrate d2 was heated at 100° C. for 30 minutes and then at 180° C. for 30 minutes under normal pressure to heat cure the first and second thermosetting resin composition layers. Thermal curing was performed with the substrate in a horizontal state. In this way, insulating layers were formed on both surfaces of the insulating substrate. This step corresponds to the step (D) (in detail, the step (D2)).

<Measurement of the height (h _B ) of the non-resin filling area of the cavity>

The height h _B of the non-resin filled region of the cavity was measured using a microscope ("VH-5500" manufactured by Keyence) for the substrate b1 and the substrate b2.

<Measurement of the melt viscosity of the first thermosetting resin composition layer in the vacuum lamination process of the second adhesive film>

With respect to the first thermosetting resin composition layer in the first adhesive film produced in the following production example, the melt viscosity was measured using a dynamic viscoelasticity measuring device ("Rheosol-G3000" manufactured by U.B.M.) I did. For 1 g of the sample resin composition, a parallel plate having a diameter of 18 mm was used, and after holding for 1 minute at T ₁ (℃) shown in Table 2-1 or 2-2, the dynamic point was measured under vibration 1 Hz and strain 1 deg. The modulus of elasticity was measured and the melt viscosity (poise) was calculated. In addition, the sample resin composition, prior to the measurement of the melt viscosity, in the same thermal history as the steps (A) and (B) (if necessary, step (B')) described in Table 2-1 or Table 2-2. Sent.

<Evaluation of board warpage>

The evaluation of the substrate warpage was performed as shown in FIG. 6 using the substrate c1 and the substrate c2. Specifically, at room temperature (23° C.), one side (CD side) of the substrate c1 or the substrate c2 (50 in FIG. 6) is fixed with a fixture 31, and a direction perpendicular to the ground (horizontal surface) Hung with it. Here, a plane perpendicular to the ground including the CD side of the substrate c1 or c2 is assumed, and this is assumed to be a vertical plane (30 in Fig. 6). And, from the vertical plane 30, measure the vertical heights (H _A and H _B ) of both ends of the opposite side (AB side), that is, ends A and B, and the average value ((H _A + H _B )/2) Was obtained. And based on the following criteria, the board|substrate warp was evaluated. In addition, if the average value in this evaluation is larger than 25 mm, a problem is likely to occur in conveyance of the substrate in the step of vacuum lamination of the second adhesive film.

Evaluation standard:

○: The average value is 25 mm or less

×: the average value is larger than 25 mm

<Evaluation of component position misalignment>

The change in the position of the part before and after lamination of the second adhesive film was measured with an optical microscope ("VH-5500" manufactured by Keyence). For the measurement, the change in the position of the target component between the substrate c1 and the substrate d1 or between the substrate c2 and the substrate d2 was measured. In addition, in this evaluation, the position change (µm) of the reference point was measured with the center of the part as a reference point. And based on the following evaluation criteria, the positional displacement of a component was evaluated.

Evaluation standard:

○: The position change is less than 40 μm

×: the position change is 40 µm or more

[Production Example 1]

(1) Preparation of resin varnish 1

Bisphenol A type epoxy resin (epoxy equivalent 180, manufactured by Mitsubishi Chemical Co., Ltd. ``jER828EL'') 28 parts, naphthalene type tetrafunctional epoxy resin (epoxy equivalent 163, manufactured by Dainihon Ink Chemical Co., Ltd. ``HP4700'') 28 Parts and 20 parts of a phenoxy resin ("YX6954BH30" manufactured by Mitsubishi Chemical Co., Ltd., a 30% solid content MEK solution) were dissolved by heating in a mixed solvent of 15 parts of MEK and 15 parts of cyclohexanone while stirring. There, 27 parts of a triazine skeleton-containing phenol novolak resin (hydroxyl equivalent of 125, manufactured by DIC Co., Ltd. "LA7054", a solid 60% MEK solution, nitrogen content of about 12% by weight), a naphthol-based hardener (hydroxyl equivalent of 215, Synnittetsu Sumiking Chemical Co., Ltd. ``SN-485'', solid content 50% by weight MEK solution) 27 parts, imidazole-based hardening accelerator (Shikoku Chemical Industry Co., Ltd., ``2E4MZ'') 0.1 part, flame retardant ( Sanko Co., Ltd. "HCA-HQ", 10-(2,5-dihydroxyphenyl)-10-hydro-9-oxa-10-phosphaphenanthrene-10-oxide, average particle diameter 2㎛) 5 Part, 140 parts of spherical silica (average particle diameter 0.5 μm, "SOC2" manufactured by Adomex Corporation) surface-treated with an aminosilane-based coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.), and polyvinyl 30 parts of butyral resin (“KS-1” manufactured by Sekisui Chemical Industry Co., Ltd., a 1:1 solution of ethanol and toluene having a solid content of 15% by weight) was mixed and uniformly dispersed with a high-speed rotary mixer to obtain resin varnish 1. Was produced.

When the total of the nonvolatile components in the resin varnish 1 was 100% by mass, the content of the inorganic filler (spherical silica) was about 58% by mass.

(2) Preparation of the first adhesive film 1

As a support, a PET film ("AL5" manufactured by Lintec Co., Ltd., 38 µm in thickness) with an alkyd resin-based release layer was prepared. The resin varnish 1 prepared above was uniformly applied to the surface of the release layer side of the support with a die coater, and dried at 80 to 120°C (average 100°C) for 5 minutes to form a first thermosetting resin composition layer. The thickness of the first thermosetting resin composition layer was 25 µm. Next, the smooth surface side of a polypropylene film ("Alpan MA-411" manufactured by Ojitokushu City, 15 µm in thickness) was bonded to the surface of the thermosetting resin composition layer as a protective film to prepare the first adhesive film 1.

(3) Preparation of the second adhesive film 1

As a support, a PET film ("AL5" manufactured by Lintec Co., Ltd., 38 µm in thickness) with an alkyd resin-based release layer was prepared. The resin varnish 1 prepared above was uniformly applied to the surface of the release layer side of the support with a die coater, and dried at 80 to 120°C (100°C on average) for 4 minutes to form a second thermosetting resin composition layer. The thickness of the second thermosetting resin composition layer was 30 µm. Next, the smooth surface side of a polypropylene film ("Alpan MA-411" manufactured by Ojitokushu City, 15 µm in thickness) was bonded to the surface of the thermosetting resin composition layer as a protective film to prepare a second adhesive film 1.

[Production Example 2]

(1) Preparation of resin varnish 2

Bisphenol type epoxy resin (``ZX1059'' manufactured by Shinnittetsu Sumiking Chemical Co., Ltd., 1:1 mixture of bisphenol A type and bisphenol F type, epoxy equivalent of about 169) 5 parts, naphthalene type epoxy resin (manufactured by DIC Corporation) ``HP4032SS'', epoxy equivalent of about 144) 5 parts, bixylenol type epoxy resin (Mitsubishi Chemical Co., Ltd. ``YX4000HK'', epoxy equivalent of about 185) 5 parts, biphenyl type epoxy resin (manufactured by Nihon Kayaku Co., Ltd.) 15 parts of ``NC3000H'', epoxy equivalent of about 288), and 10 parts of phenoxy resin (``YL7553BH30'' manufactured by Mitsubishi Chemical Co., Ltd., a weight average molecular weight of about 35000, a solid content of 30% MEK solution), while stirring 25 parts of solvent naphtha Heated and dissolved. After cooling to room temperature, 10 parts of a triazine skeleton-containing phenol novolak curing agent ("LA-7054" manufactured by DIC Corporation, a hydroxyl equivalent of 125, a solid content 60% MEK solution) 10 parts, and a naphthol curing agent (Shinnit Tetsusumi Kinkaku Co., Ltd. ``SN-485'', hydroxyl equivalent weight 215, solid content 60% MEK solution) 10 parts, hardening accelerator (4-dimethylaminopyridine (DMAP), solid content 5 mass% MEK solution) 1 part , Flame retardant ("HCA-HQ" manufactured by Sanko Corporation, 10-(2,5-dihydroxyphenyl)-10-hydro-9-oxa-10-phosphaphenanthrene-10-oxide, average particle diameter 2 Μm) 3 parts, spherical silica surface-treated with an aminosilane coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Co., Ltd.) ("SOC2" manufactured by Adomex Co., Ltd.), average particle diameter 0.5 μm, per unit surface area 130 parts of carbon amount 0.39 mg/m 2) were mixed and uniformly dispersed in a high-speed rotary mixer to prepare a resin varnish 2.

When the total of the non-volatile components in the resin varnish 2 was 100% by mass, the content of the inorganic filler (spherical silica) was about 73% by mass.

(2) Preparation of the first adhesive film 2

As a support, a PET film ("AL5" manufactured by Lintec Co., Ltd., 38 µm in thickness) with an alkyd resin-based release layer was prepared. The resin varnish 2 prepared above was uniformly applied to the surface of the release layer side of the support with a die coater, and dried at 80 to 120°C (average 100°C) for 5 minutes to form a first thermosetting resin composition layer. The thickness of the first thermosetting resin composition layer was 30 µm. Next, the smooth surface side of a polypropylene film ("Alpan MA-411" manufactured by Ojitokushu City Co., Ltd., thickness 15 µm) was bonded to the surface of the thermosetting resin composition layer as a protective film to prepare a first adhesive film 2.

(3) Preparation of the second adhesive film 2

As a support, a PET film ("AL5" manufactured by Lintec Co., Ltd., 38 µm in thickness) with an alkyd resin-based release layer was prepared. The resin varnish 2 prepared above was uniformly applied to the surface of the release layer side of the support with a die coater, and dried at 80 to 120°C (average 100°C) for 4 minutes to form a second thermosetting resin composition layer. The thickness of the second thermosetting resin composition layer was 50 µm. Next, the smooth surface side of a polypropylene film ("Alpan MA-411" manufactured by Ojitokushu City Co., Ltd., thickness 15 µm) was bonded to the surface of the thermosetting resin composition layer as a protective film to prepare a second adhesive film 2.

<Example 1-1>

Using the first adhesive film 1 and the second adhesive film 1, the substrates (a1) to (d1) were produced in accordance with the procedure of [Preparation 1 of a sample for measurement and evaluation]. Each evaluation result is described in 2-1. On the other hand, regarding the obtained substrate b1, the height h _B of the non-resin filled region of the cavity was 97 µm.

<Example 1-2>

Using the first adhesive film 2 and the second adhesive film 2, the substrates (a1) to (d1) were produced according to the procedure of [Preparation 1 of the sample for measurement and evaluation]. Each evaluation result is described in 2-1. On the other hand, with respect to the obtained substrate b1, the height h _B of the non-resin filled region of the cavity was 95 µm.

<Example 1-3>

Using the first adhesive film 1 and the second adhesive film 1, the substrates (a1) to (d1) were produced in accordance with the procedure of [Preparation 1 of a sample for measurement and evaluation]. Each evaluation result is described in 2-1. On the other hand, regarding the obtained substrate b1, the height h _B of the non-resin filled region of the cavity was 97 µm.

<Example 1-4>

Using the first adhesive film 1 and the second adhesive film 1, the substrates (a1) to (d1) were produced in accordance with the procedure of [Preparation 1 of a sample for measurement and evaluation]. Each evaluation result is described in 2-1. On the other hand, regarding the obtained substrate b1, the height h _B of the non-resin filled region of the cavity was 97 µm.

<Example 1-5>

Substrates a1 to d1 were manufactured in the same manner as in Example 1-1, except that the vacuum evacuation time at the time of vacuum lamination of the second adhesive film was changed from 30 seconds to 60 seconds. Each evaluation result is described in 2-1. On the other hand, regarding the obtained substrate b1, the height h _B of the non-resin filled region of the cavity was 97 µm.

<Comparative Example 1-1>

Using the first adhesive film 1 and the second adhesive film 1, evaluation substrates (a1) to substrates (d1) were produced in accordance with the procedure of [Preparation 1 of a sample for measurement and evaluation]. Each evaluation result is described in 2-1. On the other hand, regarding the obtained substrate b1, the height h _B of the non-resin filled region of the cavity was 97 µm.

[ Table 2-1 ]

<Example 2-1>

Using the first adhesive film 1 and the second adhesive film 1, the substrates (a2) to (d2) were produced in accordance with the procedure of [Preparation 2 of the sample for measurement and evaluation]. Each evaluation result is described in 2-2. On the other hand, with respect to the obtained substrate b2, the height h _B of the non-resin filled region of the cavity was 97 µm.

<Example 2-2>

Using the first adhesive film 2 and the second adhesive film 2, the substrates (a2) to (d2) were manufactured according to the procedure of the above [Preparation 2 of a sample for measurement and evaluation]. Each evaluation result is described in 2-2. On the other hand, with regard to the obtained substrate b2, the height h _B of the non-resin filled region of the cavity was 95 µm.

<Example 2-3>

Using the first adhesive film 1 and the second adhesive film 1, the substrates (a2) to (d2) were produced in accordance with the procedure of [Preparation 2 of the sample for measurement and evaluation]. Each evaluation result is described in 2-2. On the other hand, with respect to the obtained substrate b2, the height h _B of the non-resin filled region of the cavity was 97 µm.

<Example 2-4>

Using the first adhesive film 1 and the second adhesive film 1, the substrates (a2) to (d2) were produced in accordance with the procedure of [Preparation 2 of the sample for measurement and evaluation]. Each evaluation result is described in 2-2. On the other hand, for the obtained substrate b2, the height h _B of the non-resin filled region of the cavity was 98 µm.

<Example 2-5>

Substrates a2 to d2 were manufactured in the same manner as in Example 2-1, except that the vacuum evacuation time at the time of vacuum lamination of the second adhesive film was changed from 30 seconds to 60 seconds. Each evaluation result is described in 2-2. On the other hand, with respect to the obtained substrate b2, the height h _B of the non-resin filled region of the cavity was 97 µm.

<Comparative Example 2-1>

Using the first adhesive film 1 and the second adhesive film 1, an evaluation substrate (a2) to a substrate (d2) were produced in accordance with the procedure of [Preparation of a sample for measurement and evaluation]. Each evaluation result is described in 2-2. On the other hand, with respect to the obtained substrate b2, the height h _B of the non-resin filled region of the cavity was 97 µm.

[ Table 2-2 ]

11 circuit board
Circuit board with 11' cavity
12 substrate
12a cavity
13 circuit wiring
15 parts
21 Insulation board
Insulation substrate with 21' cavity
21a cavity
23 circuit wiring
25 parts
30 vertical plane
31 Fixture
50 Substrate (c1), Substrate (c2)
100 first adhesive film
101 first support
102 First thermosetting resin composition layer
102' first insulating layer
200 second adhesive film
201 second support
202 second thermosetting resin composition layer
202' second insulating layer
1000 parts built-in circuit board
2000 parts embedded board

Claims (22)

A manufacturing method of a component-embedded wiring board comprising the following steps (A), (B), (C) and (D) in this order:
(A) a first comprising a first support and a first thermosetting resin composition layer bonded to the first support on an inner-layer substrate having first and second main surfaces and having a cavity penetrating between the first and second main surfaces 1 Step of vacuum laminating the adhesive film so that the first thermosetting resin composition layer is bonded to the first main surface of the inner substrate
(B) Process of temporarily attaching parts to the first thermosetting resin composition layer in the cavity
(C) a second adhesive film comprising a second support and a second thermosetting resin composition layer bonded to the second support on the second main surface of the inner substrate, and the second thermosetting resin composition layer is the second main surface of the inner substrate As a process of vacuum laminating so as to bond with, the process of vacuum laminating under conditions where the heating temperature of the surface of the first adhesive film is lower than the heating temperature of the surface of the second adhesive film
(D) Step of forming an insulating layer by thermosetting the first and second thermosetting resin composition layers. The method of claim 1, wherein the inner layer substrate is a circuit board. The method of claim 1, wherein the inner layer substrate is an insulating substrate. The method according to claim 3, wherein the insulating substrate is a cured prepreg, a glass substrate or a ceramic substrate. The method according to claim 1, wherein in the step (C), when the heating temperature of the surface of the first adhesive film is T ₁ (°C) and the heating temperature of the surface of the second adhesive film is T ₂ (°C), T ₁ and T , the method of the _second, satisfy the relationship of T ₂ -40≤T ₁ ≤T ₂ -10. The method according to claim 1, wherein the second thermosetting resin composition layer is thicker than the first thermosetting resin composition layer. The non-resin filling of the cavity of the inner substrate after vacuum lamination of the first adhesive film and the height h _A of the inner substrate before vacuum lamination of the first adhesive film according to claim 1, in step (A) The method, wherein the height of the region (h _B ) satisfies the relationship of 0.8h _A ≤ h _B ≤ h _A. The method according to claim 1, wherein in the step (C), the melt viscosity of the first thermosetting resin composition layer is 2000 poise or more. The method according to claim 1, comprising a step of smoothing both surfaces of the first adhesive film side and the second adhesive film side by hot pressing between the step (C) and the step (D). The method according to claim 1, wherein in step (D), heat curing is performed in a state where the first and second supports are attached. The method of claim 2, wherein the circuit board has a thickness of 50 to 350 μm. The method according to claim 3, wherein the thickness of the insulating substrate is 30 to 350 μm. The method of claim 1, wherein the pitch between the cavities is between 1 and 10 mm. The method according to claim 1, wherein the content of the inorganic filler in the first thermosetting resin composition layer is 50% by mass or more. The method according to claim 1, wherein the curvature of the substrate obtained in the step (B) is 25 mm or less. The method according to claim 1, further comprising the step of (E) perforating. The method according to claim 1, further comprising the step of (F) forming a conductor layer over the insulating layer. The method according to claim 17, wherein step (F),
Roughening the insulating layer, and
A method comprising forming a conductor layer by plating over the harmonized insulating layer. delete delete delete delete

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