KR102156778B1 - Organic light emitting diode display - Google Patents

Abstract

The present invention discloses an organic electroluminescent display device. More specifically, the present invention relates to an organic light emitting display device in which image quality is maximized by minimizing variation in parasitic capacitors between pixels while implementing high resolution by improving the structure of sub-pixels.
According to an exemplary embodiment of the present invention, a luminance deviation between odd-numbered and even-numbered pixels can be improved by forming signal wirings formed in subpixels so that the same parasitic capacitance is applied according to the structure of the light emitting unit.

Description

Organic light emitting display device {ORGANIC LIGHT EMITTING DIODE DISPLAY}

The present invention relates to an organic light emitting display device, and in particular, to an organic light emitting display device that maximizes image quality by minimizing the deviation of parasitic capacitors between pixels while implementing high resolution by improving the structure of sub-pixels.

As a flat panel display device proposed to replace the existing cathode ray tube display device, a liquid crystal display, a field emission display, and a plasma display device (Plasma Display Panel) and organic light-emitting display devices (Organic Light-Emitting Diode Display, OLED Display).

Among them, the organic light emitting display device has a high luminance and low operating voltage characteristics of the organic light emitting diode provided in the display panel, and is a self-luminous type that emits light by itself, so the contrast ratio is large and the ultra-thin display It has the advantage that it can be implemented. In addition, it is easy to implement a moving image with a response time of several microseconds (µs), there is no limit on the viewing angle, and it has stable characteristics even at low temperatures.

The organic electroluminescent display device is divided into a top emission method and a bottom emission method depending on the direction in which light is emitted. The lower emission method has a high degree of stability and process freedom. It is difficult to apply to high-resolution products due to its limitations, and the top light-emitting method is in the spotlight according to the recent trend of high resolution and large area of flat panel display devices.

1A and 1B are diagrams illustrating an example of a pixel structure of a conventional top emission type organic light emitting display device.

1A and 1B, FIG. 1A shows three subpixels 10, 20, and 30 of red (R), green (G), and blue (B) forming one pixel PX in a horizontal direction, respectively. Accordingly, as a non-flip structure arranged side by side in a line, the light emitting portions 11, 21, and 31 of each subpixel 10, 20, 30 are arranged side by side.

In this stripe structure, each of the sub-pixels 10, 20, and 30 are regularly arranged in the horizontal and vertical directions, so that the data wiring, the power supply voltage wiring, the reference voltage wiring, and the initialization signal wiring are shared between the neighboring pixels. It is connected equally every 10, 20, 30), which has the advantage of high design space efficiency and consistency in pattern.

In addition, Fig. 1B shows the structure of the sub-pixels 10, 20, and 30 is the same as that of Fig. 1A, but the two light-emitting parts 11 and 21 are horizontally arranged in a Flip structure, and one light-emitting part 31 is vertically It is a combination of the two structures by forming a non-flip structure arranged in a row, and the position of the sub-pixel and the light emitting part is not consistent. This structure has the advantage of being able to design as close as possible to the limit of the designable resolution in the mask process.

Conventionally, in order to maximize the aperture ratio of the organic light emitting display device, the pixel structure as shown in FIG. 1B was applied, but this is a disadvantage in that the performance of the thin film transistor is degraded depending on the signal wiring formed in each pixel and the parasitic capacitor between the electrodes forming the light emitting part. There is this.

2 is a diagram showing a configuration of signal wiring formed in a pixel of an organic light emitting display device according to a conventional pixel structure.

Referring to FIG. 2, in a conventional organic light emitting display device, six adjacent subpixels (10 to 60) are formed in a horizontal direction, and R, G light emitting units (11, 21, 41, 51) have a flip structure. When the B light-emitting parts 31 and 61 are formed in a non-flip structure, the data wires Vdata_R, Vdata_B, and Vdata_G are the power supply line VDD and the light-emitting parts 11 and 21, respectively. 31,41,51,61) have different parasitic capacitance components.

Specifically, in the first to third subpixels 10 to 30, the first R light-emitting part 11 and the second G light-emitting part 21 are R data lines Vdata_R and G data lines ( Vdata_G), and the power voltage supply line (VDD) is disposed to overlap the center of the first R light-emitting part 11 and the second G light-emitting part 12, but the fourth to sixth subpixels 40 to 60 ), the R data line (Vdata_R) and the G data line (Vdata_G) are overlapped at the center of the second R light-emitting part 41 and the second G light-emitting part 51, and the power voltage supply line (VDD) is 2 The R light-emitting part 41 and the second G light-emitting part 51 are disposed on both sides to be connected.

Accordingly, the first R, G light emitting parts 11 and 21 and the second R, G light emitting parts 41 and 51 have different parasitic capacitances, respectively, so that the threshold voltage of the driving thin film transistor between the pixels in the even and odd columns It causes a difference in compensation and a difference in luminance, which causes color deviation.

FIG. 3A is a diagram illustrating a pixel for each color in an organic light emitting display device having a conventional structure, and FIG. 3B is a view showing a result of a luminance measurement between pixels in an odd column and an even column and a simulation result of a current flowing through the organic light emitting diode. As shown in 3A and 3B, it is confirmed that the parasitic capacitance deviation between each pixel is a level that can be directly visually recognized by the observer's eyes at low luminance, and the luminance measurement result and current deviation also appear to be greater than 60% at low gradation. I can.

The present invention was conceived to solve the above problems, and an object of the present invention is to improve the luminance deviation due to the difference in parasitic capacitance between pixels in odd and even columns in an organic light emitting display device having a pixel structure with improved aperture ratio. have.

In order to achieve the above object, in the organic light emitting display device according to the first embodiment of the present invention, in the organic light emitting display device including a plurality of pixels in which first to third subpixels are sequentially arranged, The pixels may include first and second data lines formed on one side of the first and second subpixels, respectively; A first power voltage supply line formed at a point where the first and second subpixels meet; A third data line and a second power voltage supply line formed on both sides of the third subpixel, respectively; First and second light emitting units formed parallel to each other over the first and second subpixels; And a third light emitting part formed on the third subpixel.

In the organic light emitting display device according to the second embodiment of the present invention, in an organic light emitting display device including a plurality of pixels in which first to third subpixels are sequentially arranged, the pixels include the first and third subpixels. First and second data lines respectively formed on one side of the second subpixel; A third data line formed on one side of the third subpixel; A power supply voltage supply line formed at a point where the first and second subpixels meet; First and second light emitting units formed parallel to each other over the first and second subpixels; A third light emitting part formed on the third sub-pixel; And a connection wiring electrically connecting the power voltage supply line and the third sub-pixel.

In addition, in order to achieve the above object, in the organic light emitting diode according to the third embodiment of the present invention, the first and second subpixels are arranged side by side in the first direction, and the third subpixel is arranged in the first direction. An organic light emitting display device comprising: a plurality of pixels disposed in a second direction perpendicular to the pixel, the pixel comprising: first and second data lines formed on both sides of the first and second subpixels, respectively; A third data line formed on one side of the third subpixel; A power supply voltage supply line formed at a point where the first and second subpixels and the third subpixel meet; And first to third light emitting portions respectively formed on the first to third subpixels.

The organic light emitting display device according to the embodiment of the present invention has the effect of improving the luminance deviation between the pixels in odd and even columns by forming the signal wiring formed in the sub-pixels so that the same parasitic capacitance is applied according to the structure of the light emitting part. There is.

1A and 1B are diagrams illustrating an example of a pixel structure of a conventional top emission type organic light emitting display device.
2 is a diagram showing a configuration of signal wiring formed in a pixel of an organic light emitting display device according to a conventional pixel structure.
3A is a diagram illustrating a pixel for each color in an organic light emitting display device having a conventional structure, and FIG. 3B is a diagram illustrating a result of a luminance measurement between pixels in odd and even columns and a simulation result of a current flowing through an organic light emitting diode.
4 is a cross-sectional view illustrating a thin film transistor and an organic light emitting diode included in one subpixel constituting a pixel of an organic light emitting display device according to an exemplary embodiment of the present invention.
5A is a view showing a pixel structure of a conventional organic light emitting display device and its parasitic capacitance component, and FIG. 5B is a view showing a pixel structure of an organic light emitting display device according to the first embodiment of the present invention and its parasitic capacitance component. to be.
6 is a diagram showing the structure of an organic light emitting display device according to a second embodiment of the present invention.
7 is a diagram illustrating a structure of an organic light emitting display device according to a third embodiment of the present invention.

Hereinafter, an organic light emitting display device according to a preferred embodiment of the present invention will be described with reference to the drawings.

4 is a cross-sectional view illustrating a thin film transistor and an organic light emitting diode included in one subpixel constituting a pixel of an organic light emitting display device according to an exemplary embodiment of the present invention.

Referring to FIG. 4, a first insulating layer 175 exposing a part of the semiconductor layer 173 and the semiconductor layer 173 is formed on a substrate 170, and a gate electrode 177 and a second insulating layer are formed thereon. 179 is formed in a stacked structure, and a source electrode 183a and a drain electrode 183b are formed on the semiconductor layer 173 exposed through the first and second insulating layers 175 and 179.

In addition, a protective layer 185 is formed on the drain electrode 183b, and an anode electrode 191, an organic light emitting layer 193, and a cathode electrode 195 connected to the drain electrode 183b through a contact hole are sequentially formed. Are stacked to form an organic light emitting diode (EL).

The substrate 170 may be a transparent substrate made of glass or plastic, and although not shown, an insulating material over the entire surface of the substrate 170, for example, an inorganic insulating material such as silicon oxide (SiO2) or silicon nitride (SiNx) A buffer layer (not shown) made of may be further formed.

A semiconductor layer 173 is formed on the substrate 170. The semiconductor layer may be doped with different concentrations of impurities for each region, and may be formed of polysilicon. The semiconductor layer 137 may be replaced with amorphous silicon instead of polysilicon, and when polysilicon is used, it may be formed in a form in which amorphous silicon is deposited and then crystallized into polysilicon.

The crystallization method is RTA (Rapid Thermal Annealing) process, SPC (Solid Phase Crystallization), ELA (Excimer Laser Annealing), MIC (Metal Induced Crystallization), MILC (Metal Induced Lateral Crystallization) or SLS (Sequential Lateral) Solidification) can be applied.

A gate insulating layer 275 is formed on the semiconductor layer 173. The gate insulating layer 175 serves to insulate between the semiconductor layer 173 and the gate electrode 177 and may be formed of an insulating material such as a silicon oxide layer (SiOx) or a silicon nitride layer (SiNx).

A gate electrode 177 is formed on the gate insulating layer 175. Such a gate electrode is a single layer made of any one of a metal material having low resistance properties, for example, aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), and molitanium (MoTi). It may be formed in a structure or a double layer or triple layer structure in which two or more metal materials are combined.

An interlayer insulating film 179 is formed over the entire surface of the substrate 100 on the gate electrode 177. The interlayer insulating layer 179 may be formed of the same insulating material as the gate insulating layer 175, for example, silicon oxide (SiO2) or silicon nitride (SiNx), which are inorganic insulating materials.

A contact hole exposing a partial region of the semiconductor layer 173 is formed in the gate insulating layer 175 and the interlayer insulating layer 179, and a source electrode 183a and a drain electrode 183b are formed above the contact hole. .

The source electrode 183a and the drain electrode 183b are aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, molybdenum (Mo), molitanium (MoTi), chromium (Cr), titanium (Ti ) May be made of any one or two or more materials.

In particular, although not shown, data wiring and power supply voltage wiring are formed of the same metal as the source electrode 183a and the drain electrode 183b.

A protective layer 185 is formed on the source electrode 183a and the drain electrode 183b. The protective layer 185 is provided on the source electrode 183a and the drain electrode 183b to protect and planarize each thin film transistor TR. Here, the protective layer 185 may be configured in various forms, and may be formed of an organic material such as BCB (benzocyclobutene) or acrylic (acryl), or an inorganic material such as SiNx, and may be formed as a single layer or as a double or multiple layer. Can be.

An anode electrode 191 is formed on the protective layer 185. The anode electrode 191 is independently formed on each subpixel to form a light emitting portion, and is in contact with the drain electrode 183b. Such an anode electrode may be made of an opaque conductive material, and a metal material having a work function value relatively lower than that of the cathode electrode described later, for example, aluminum (Al), aluminum lead (AlNd), silver (Ag), magnesium ( Mg), gold (Au), and aluminum-magnesium alloy (AlMg) may be formed of any one material selected from.

The organic emission layer 193 is formed to correspond to the anode electrode 191. The organic light-emitting layer 193 is composed of a single layer made of a light-emitting material, or in order to increase luminous efficiency, a hole injection layer, a hole transporting layer, a light-emitting material layer, or It may be composed of multiple layers of an electron transporting layer and an electron injection layer.

A cathode electrode 195 is formed over the entire surface of the substrate 170, facing the anode electrode 191 with the organic emission layer 193 therebetween. Unlike the anode electrode 191, the cathode electrode 195 may be formed of a transparent conductive material having a relatively large work function value, for example, indium-tin-oxide (ITO) or indium-zinc-oxide (IZO).

The anode electrode 191, the organic light emitting layer 193, and the cathode electrode 195 form one organic light emitting diode EL, and serve as a light emitting part in each pixel.

On the other hand, each organic light emitting diode EL is divided for each sub-pixel through the bank layer 187. The bank layer 187 may be formed of an insulating material such as a silicon oxide layer (SiOx) or a silicon nitride layer (SiNx), and may be formed of various insulating organic materials.

Hereinafter, the technical configuration of the present invention will be described in comparison with the pixel structure of the conventional and organic light emitting display device according to the first embodiment of the present invention. The thin film transistor pattern described in the following description includes all of the metal layers constituting the thin film transistor of FIG. 5 and signal wirings connected thereto.

5A is a view showing a pixel structure and a parasitic capacitance component thereof of a conventional organic light emitting display device, and FIG. 5B is a diagram showing a pixel structure of an organic light emitting display device according to the first embodiment of the present invention and a parasitic capacitance component thereof to be.

Referring to FIG. 5A, in a conventional organic light emitting display device, two pixels arranged side by side have a structure in which six subpixels 10 to 60 are arranged side by side in a horizontal direction.

Of these, in the three sub-pixels (10 to 30) included in the pixels of odd columns, the R and G light emitting parts 11 and 21 are formed in a flip structure, and the B light emitting parts 31 and 61 have a non-flip structure. It is formed, and the thin film transistor patterns 15, 25, and 35 of each of the sub-pixels 10 to 30 are formed side by side in the horizontal direction.

In the following description, the thin film transistor patterns 15, 25, and 35 schematically show a configuration including not only source and drain electrodes of the thin film transistor, but also signal wirings connected thereto and a lower gate electrode.

In addition, the R data line (Vdata_R) is formed on the left side of the first thin film transistor pattern 15, the G data line (Vdata_G) is formed on the right side of the second thin film transistor pattern 25, and the B data line (Vdata_B) Is formed on the left side of the third thin film transistor pattern 35.

In this structure, the power supply voltage supply wiring VDD for supplying the power voltage to the first and second subpixels 10 and 20 is formed between the first and second thin film transistor patterns 15 and 25. , The third subpixel 30 is supplied with a power voltage through a power voltage supply line VDD formed between the fourth subpixel 40 and the fourth subpixel 40.

In addition, the three sub-pixels 40 to 60 included in the pixels of the even column are in the direction of the R, G, B light emitting portions 41, 51, 61 and the thin film transistor patterns 45, 55, 65 Same as pixel.

In addition, in pixels of even columns, the R data line (Vdata_R) is formed on the right side of the fourth thin film transistor pattern 45, the G data line (Vdata_G) is formed on the left side of the fifth thin film transistor pattern 55, and B The data line Vdata_B is formed on the right side of the sixth thin film transistor pattern 65.

According to this structure, the power supply voltage supply wiring (VDD) provided in the pixels in even columns is at the left side of the fourth subpixel 40 and at the portion where the fifth subpixel 50 and the sixth subpixel 60 meet, respectively. Will be formed one by one.

Therefore, in the conventional organic light emitting display device, the odd-numbered pixels overlap the first and second light emitting portions 11 and 21, the first and second thin film transistor patterns 15 and 25, and the power supply line VDD. The parasitic capacitance (Cpara1) is affected at the portion where the even-numbered column is connected to the fourth and fifth light emitting units 41 and 51, the fourth and fifth thin film transistor patterns 45 and 55, and the power supply voltage supply wiring. It can be seen that the parasitic capacitance acting on the two pixels is different from each other because it is affected by the parasitic capacitance (Cpara2) at the overlapping portion with (VDD) (Cpara1≠Cpara2).

In contrast, referring to FIG. 5B, in the organic light emitting display device according to the first embodiment of the present invention, six subpixels 110 to 160 are formed horizontally in two pixels arranged side by side. The arrangement of the pixels 110 to 160 is the same as that of FIG. 5A.

In addition, in the first pixel, the R data line (Vdata_R) is formed on the left side of the first thin film transistor pattern 115, the G data line (Vdata_G) is formed on the right side of the second thin film transistor pattern 125, The B data line Vdata_B is formed on the left side of the third thin film transistor pattern 135.

In addition, the power voltage supply wiring VDD connected to the first and second subpixels 110 and 120 is formed between the first and second thin film transistor patterns 115 and 125, and the third subpixel 130 The power voltage supply line VDD connected to is formed on the third subpixel 130 at one side adjacent to the fourth subpixel 140.

In addition, the R data line (Vdata_R) in the three subpixels 140 to 160 included in the pixels in the even column is formed on the left side of the fourth thin film transistor pattern 145, and the G data line (Vdata_G) is the fifth thin film. It is formed on the right side of the transistor pattern 155, and the B data line Vdata_B is formed on the left side of the sixth thin film transistor pattern 165.

Accordingly, the power supply voltage supply wiring VDD connected to the fourth and fifth subpixels 140 and 150 provided in pixels in even columns is formed between the fourth and fifth thin film transistor patterns 145 and 155, The power voltage supply line VDD connected to the sixth subpixel 160 is formed on the left side of the sixth subpixel 160.

Accordingly, in the organic light emitting display device according to the first embodiment of the present invention, the first and second light emitting portions 111 and 121 of odd-numbered pixels and the fourth and fifth light-emitting portions 141 and 151 of even-numbered pixels are respectively Parasitic capacitances (Cpara1, Cpara2) at portions overlapping with the first and fourth thin film transistor patterns 115 and 145 and the second and fifth thin film transistor patterns 125 and 155 and the central power supply voltage supply line VDD It can be seen that the parasitic capacitance acting on the even-numbered pixels and the odd-numbered columns becomes the same (Cpara1 = Cpara2).

Hereinafter, a structure of an organic light emitting display device according to the second and third embodiments of the present invention will be described with reference to the drawings.

6 is a diagram showing the structure of an organic light emitting display device according to a second embodiment of the present invention. In the following second embodiment, the pixel structure and the arrangement of the thin film transistors thereof are the same as those of the first embodiment, except that the connection structure of the signal wirings is different so that each light emitting unit has the same parasitic capacitance component.

Referring to FIG. 6, in the organic light emitting display device according to the second exemplary embodiment of the present invention, as two pixels are arranged side by side, their subpixels 10 to 60 are also arranged side by side in a horizontal direction. Among them, in the three subpixels 210 to 230 included in the pixels of odd columns, the R and G light emitting parts 211 and 221 are formed in a flip structure, and the B light emitting part 231 is formed in a non-flip direction, and each The thin film transistor patterns 215, 225, and 235 of the subpixels 210 to 230 are formed side by side in the horizontal direction.

In addition, the R data line (Vdata_R) is formed on the left side of the first thin film transistor pattern 215, the G data line (Vdata_G) is formed on the right side of the second thin film transistor pattern 225, and the B data line (Vdata_B) Is formed on the left side of the third thin film transistor pattern 235.

In addition, the power voltage supply wiring (VDD) is formed between the first and second thin film transistor patterns 215 and 225 to be connected to the first and second subpixels 210 and 220, and the power voltage supply wiring ( The first connection line CL1 formed on a metal layer different from the VDD and extending to one side is also electrically connected to the third subpixel 230. That is, in the second embodiment of the present invention, the first and second sub-pixels 210 are not provided with a separate power supply voltage supply line (VDD) for supplying a power voltage to the third sub-pixel 230. 220) is characterized in that the power supply voltage is supplied through the first connection line CL1 connected to the power voltage supply line VDD.

In addition, the pixel structure and signal wiring of the fourth to sixth subpixels 240, 250, 260 of the even-numbered pixels are formed to be symmetrical with the odd-numbered pixels, and the fifth thin film transistor pattern 265 is a fourth subpixel As the power voltage is electrically connected through the second connection line CL2 connected to the power voltage supply line VDD disposed between the 240 and the fifth subpixel 250, the power voltage is supplied.

According to the above structure, in the organic light emitting display device according to the second exemplary embodiment of the present invention, the first and second pixels and signal wiring structures thereof are the same, and the parasitic capacitance Cpara1 included in the first pixel is the first And the second light emitting units 211 and 221, the first and second thin film transistor patterns 215 and 225, and the power supply voltage supply wiring VDD, and the parasitic capacitance Cpara2 included in the second pixel is a fourth And the fifth light emitting portions 241 and 251, the fourth and fifth thin film transistor patterns 245 and 255, and the power supply voltage supply wiring VDD, the parasitic capacitances of the two pixels become the same (Cpara1 = Cpara2). ).

Hereinafter, a structure of an organic light emitting display device according to a third embodiment of the present invention will be described with reference to the drawings. In the following third embodiment, the thin film transistor pattern is applied to a pixel in which the thin film transistor pattern is formed differently according to the pixel structure, and there is a difference in that the thin film transistor pattern is formed in the horizontal direction.

7 is a diagram illustrating a structure of an organic light emitting display device according to a third embodiment of the present invention.

Referring to FIG. 7, in the organic light emitting display device according to the third exemplary embodiment of the present invention, first and second pixels are arranged side by side, and first to third subpixels 310 to 330 constituting the first pixel. ), the first and second subpixels 310 and 320 are formed in a flip structure in a horizontal direction in a vertical direction, and the third subpixel 330 is formed in a non-flip structure in a vertical direction.

In addition, the thin film transistor patterns 315 and 325 of each of the first to second subpixels 310 and 320 are formed in the same horizontal direction as the corresponding subpixel, and the thin film transistor pattern 335 of the third subpixel 330 ) Is formed in the vertical direction.

Likewise, the first to third light emitting units 311, 321, and 331 provided in each of the subpixels 310 to 330 are also formed in the same direction as the first to third thin film transistor patterns 315, 325, and 335. .

In addition, the R data line (Vdata_R) is formed on the left side of the first and second thin film transistor patterns 315 and 325, and the G data line (Vdata_G) is on the right side of the first and second thin film transistor patterns 315 and 325 And the B data line Vdata_B is formed on the right side of the third thin film transistor pattern 335.

In addition, the power voltage supply line VDD is formed on the right side of the first and second subpixels 310 and 320 and between the third subpixel 330. That is, only one power voltage supply line VDD is provided in one pixel. Here, the G data line (Vdata_G) is disposed adjacent to the left side of the power voltage supply line (VDD), but the power voltage supply line (VDD) partially overlaps the regions of the first and second subpixels 310 and 320 As it is formed, it does not affect my electrical connection.

According to this structure, only the first or second thin film transistor patterns 315 and 325 overlapping with the parasitic capacitance Cpara1 component that affects the first or second light emitting units 311 and 321 exist.

Also, the pixel structure and signal wiring structure of the fourth to sixth subpixels 340, 350, and 360 of the even-numbered pixels are applied in the same manner as the odd-numbered pixels, and the fourth or fifth light emitting units 341 and 351 Only the fourth or fifth thin film transistor patterns 345 and 355 overlapping with the parasitic capacitance Cpara2 component affecting the are present.

According to the above structure, in the organic electroluminescent display device according to the third embodiment of the present invention, the parasitic capacitance Cpara1 included in the first pixel is the first or second light emitting portions 311 and 321, and the first or second Generated by the thin film transistor patterns 315 and 325, the parasitic capacitance Cpara2 included in the second pixel includes the fourth or fifth light emitting portions 341 and 351, and the fourth or fifth thin film transistor pattern 345, 355) and the power supply voltage supply line (VDD), the parasitic capacitance of the two pixels becomes the same (Cpara1 = Cpara2).

Although many items are specifically described in the above description, this should be interpreted as an example of a preferred embodiment rather than limiting the scope of the invention. Accordingly, the invention should not be determined by the described embodiments, but should be defined by the claims and equivalents to the claims.

Vdata_R: R data wiring Vdata_G: G data wiring
Vdata_B: B data wiring VDD: Power supply voltage supply wiring
110 to 160: first to sixth subpixels
111 to 161: first to sixth light emitting units
115 to 165: first to sixth thin film transistor patterns

Claims (12)

delete delete delete In an organic light emitting display device comprising a plurality of pixels in which first to third subpixels are sequentially arranged in parallel,
The pixel,
First and second data lines formed on one side of the first and second subpixels, respectively;
A third data line formed on one side of the third subpixel;
A power supply voltage supply line formed at a point where the first and second subpixels meet;
First and second light emitting units formed parallel to each other over the first and second subpixels;
A third light emitting part formed on the third sub-pixel; And
Connection wiring for electrically connecting the power voltage supply wiring and the third sub-pixel
An organic electroluminescent display device comprising a. The method of claim 4,
The first to third subpixels,
First to third thin film transistor patterns each formed in the same direction and electrically connected to the first to third light emitting units, respectively
Organic electroluminescent display device comprising a. The method of claim 4,
The first to third subpixels,
Organic electroluminescent display device, characterized in that the non-flip structure each formed in a vertical direction. The method of claim 4,
The connection wiring,
An organic light emitting display device comprising: formed on a lower metal layer of the power voltage supply line and connected to the power voltage supply line and a third subpixel through a contact hole. The method of claim 4,
The connection wiring,
The organic electroluminescent display device, characterized in that formed in a direction crossing the lower portion of the second data line. In an organic light emitting display device comprising a plurality of pixels in which first and second subpixels are arranged in parallel in a first direction, and a third subpixel is arranged in a second direction perpendicular to the first direction,
The pixel,
First and second data lines formed on both sides of the first and second subpixels, respectively;
A third data line formed on one side of the third subpixel;
A power supply voltage supply line formed at a point where the first and second subpixels and the third subpixel meet; And
First to third light emitting units respectively formed on the first to third subpixels
An organic electroluminescent display device comprising a. The method of claim 9,
The first to third subpixels,
First to third thin film transistor patterns each formed in the same direction and electrically connected to the first to third light emitting units, respectively
Organic electroluminescent display device comprising a. The method of claim 9,
Each of the first to second subpixels is a Flip structure formed in a horizontal direction,
The third sub-pixel has a non-flip structure formed in a vertical direction. The method of claim 9,
The first to third subpixels,
First to third thin film transistor patterns formed in the same direction and connected to the first to third light emitting units, respectively
Organic electroluminescent display device comprising a.

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