KR102099092B1 - Photo-sensitive resin composition, method for manufacturing cured film by using the same, cured film, liquid crystal display and organic el device - Google Patents
Photo-sensitive resin composition, method for manufacturing cured film by using the same, cured film, liquid crystal display and organic el device Download PDFInfo
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- KR102099092B1 KR102099092B1 KR1020130017371A KR20130017371A KR102099092B1 KR 102099092 B1 KR102099092 B1 KR 102099092B1 KR 1020130017371 A KR1020130017371 A KR 1020130017371A KR 20130017371 A KR20130017371 A KR 20130017371A KR 102099092 B1 KR102099092 B1 KR 102099092B1
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- resin composition
- alkyl group
- photosensitive resin
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- 239000011342 resin composition Substances 0.000 title claims abstract description 116
- 238000000034 method Methods 0.000 title claims description 83
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 140
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 73
- 229920000642 polymer Polymers 0.000 claims abstract description 71
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 69
- 239000002253 acid Substances 0.000 claims abstract description 38
- 239000002904 solvent Substances 0.000 claims abstract description 32
- 125000004429 atom Chemical group 0.000 claims abstract description 28
- 125000005647 linker group Chemical group 0.000 claims abstract description 24
- 125000003566 oxetanyl group Chemical group 0.000 claims abstract description 17
- 125000000466 oxiranyl group Chemical group 0.000 claims abstract description 13
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 74
- 125000003118 aryl group Chemical group 0.000 claims description 62
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 59
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 49
- 125000001424 substituent group Chemical group 0.000 claims description 42
- 125000005843 halogen group Chemical group 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 37
- 230000008569 process Effects 0.000 claims description 29
- 239000011229 interlayer Substances 0.000 claims description 12
- 125000003277 amino group Chemical group 0.000 claims description 10
- 125000000732 arylene group Chemical group 0.000 claims description 9
- 150000004292 cyclic ethers Chemical class 0.000 claims description 9
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 3
- 229920001187 thermosetting polymer Polymers 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 31
- -1 2-acryloyloxyethyl Chemical group 0.000 description 168
- 239000010408 film Substances 0.000 description 121
- 150000001875 compounds Chemical class 0.000 description 69
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 46
- 230000001681 protective effect Effects 0.000 description 37
- 229920005989 resin Polymers 0.000 description 34
- 239000011347 resin Substances 0.000 description 34
- 239000000178 monomer Substances 0.000 description 33
- 239000000243 solution Substances 0.000 description 33
- 238000006243 chemical reaction Methods 0.000 description 29
- 125000003545 alkoxy group Chemical group 0.000 description 28
- 239000000203 mixture Substances 0.000 description 28
- 230000015572 biosynthetic process Effects 0.000 description 27
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 25
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 22
- 238000003786 synthesis reaction Methods 0.000 description 22
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 21
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 21
- 229920000647 polyepoxide Polymers 0.000 description 21
- 239000010410 layer Substances 0.000 description 20
- 239000003822 epoxy resin Substances 0.000 description 17
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 17
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 16
- 230000001012 protector Effects 0.000 description 16
- 150000003254 radicals Chemical class 0.000 description 16
- 229920001577 copolymer Polymers 0.000 description 15
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 15
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 14
- 239000000126 substance Substances 0.000 description 14
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical group C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 13
- 150000001241 acetals Chemical group 0.000 description 13
- 239000003963 antioxidant agent Substances 0.000 description 13
- 235000006708 antioxidants Nutrition 0.000 description 13
- 150000002148 esters Chemical group 0.000 description 13
- 238000011156 evaluation Methods 0.000 description 13
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 12
- 239000003431 cross linking reagent Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- FVCSARBUZVPSQF-UHFFFAOYSA-N 5-(2,4-dioxooxolan-3-yl)-7-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C(C(OC2=O)=O)C2C(C)=CC1C1C(=O)COC1=O FVCSARBUZVPSQF-UHFFFAOYSA-N 0.000 description 11
- 238000004132 cross linking Methods 0.000 description 11
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 11
- 125000001072 heteroaryl group Chemical group 0.000 description 11
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 239000000047 product Substances 0.000 description 11
- 239000004094 surface-active agent Substances 0.000 description 11
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 10
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 238000011161 development Methods 0.000 description 10
- 230000018109 developmental process Effects 0.000 description 10
- QYGBYAQGBVHMDD-XQRVVYSFSA-N (z)-2-cyano-3-thiophen-2-ylprop-2-enoic acid Chemical compound OC(=O)C(\C#N)=C/C1=CC=CS1 QYGBYAQGBVHMDD-XQRVVYSFSA-N 0.000 description 9
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 9
- 150000008065 acid anhydrides Chemical class 0.000 description 9
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 8
- 125000004849 alkoxymethyl group Chemical group 0.000 description 8
- 125000002947 alkylene group Chemical group 0.000 description 8
- 230000003078 antioxidant effect Effects 0.000 description 8
- 150000007514 bases Chemical class 0.000 description 8
- 229910052801 chlorine Inorganic materials 0.000 description 8
- 125000001309 chloro group Chemical group Cl* 0.000 description 8
- 238000006116 polymerization reaction Methods 0.000 description 8
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 8
- 125000001412 tetrahydropyranyl group Chemical group 0.000 description 8
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 7
- XLLXMBCBJGATSP-UHFFFAOYSA-N 2-phenylethenol Chemical compound OC=CC1=CC=CC=C1 XLLXMBCBJGATSP-UHFFFAOYSA-N 0.000 description 7
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 7
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 7
- 125000000524 functional group Chemical group 0.000 description 7
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 7
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 7
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 7
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 6
- YYROPELSRYBVMQ-UHFFFAOYSA-N 4-toluenesulfonyl chloride Chemical compound CC1=CC=C(S(Cl)(=O)=O)C=C1 YYROPELSRYBVMQ-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical group C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000003513 alkali Substances 0.000 description 6
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 239000000470 constituent Substances 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 6
- 229910052753 mercury Inorganic materials 0.000 description 6
- JESXATFQYMPTNL-UHFFFAOYSA-N mono-hydroxyphenyl-ethylene Natural products OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 6
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000003377 acid catalyst Substances 0.000 description 5
- 125000004414 alkyl thio group Chemical group 0.000 description 5
- 125000004397 aminosulfonyl group Chemical group NS(=O)(=O)* 0.000 description 5
- 125000005161 aryl oxy carbonyl group Chemical group 0.000 description 5
- 125000005110 aryl thio group Chemical group 0.000 description 5
- 125000004104 aryloxy group Chemical group 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 125000004093 cyano group Chemical group *C#N 0.000 description 5
- 125000001153 fluoro group Chemical group F* 0.000 description 5
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 5
- ZQMHJBXHRFJKOT-UHFFFAOYSA-N methyl 2-[(1-methoxy-2-methyl-1-oxopropan-2-yl)diazenyl]-2-methylpropanoate Chemical compound COC(=O)C(C)(C)N=NC(C)(C)C(=O)OC ZQMHJBXHRFJKOT-UHFFFAOYSA-N 0.000 description 5
- 229920003986 novolac Polymers 0.000 description 5
- 239000012044 organic layer Substances 0.000 description 5
- 239000004014 plasticizer Substances 0.000 description 5
- 239000003505 polymerization initiator Substances 0.000 description 5
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 5
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 5
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 4
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 4
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 4
- XDHUWCBFSRIEEC-UHFFFAOYSA-N [[cyano(phenyl)methylidene]amino] methanesulfonate Chemical compound CS(=O)(=O)ON=C(C#N)C1=CC=CC=C1 XDHUWCBFSRIEEC-UHFFFAOYSA-N 0.000 description 4
- 125000005138 alkoxysulfonyl group Chemical group 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 125000006165 cyclic alkyl group Chemical group 0.000 description 4
- 125000000753 cycloalkyl group Chemical group 0.000 description 4
- 125000003700 epoxy group Chemical group 0.000 description 4
- 125000004185 ester group Chemical group 0.000 description 4
- 238000006460 hydrolysis reaction Methods 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 4
- 125000004184 methoxymethyl group Chemical group [H]C([H])([H])OC([H])([H])* 0.000 description 4
- 125000001624 naphthyl group Chemical group 0.000 description 4
- 239000002736 nonionic surfactant Substances 0.000 description 4
- 150000002923 oximes Chemical class 0.000 description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 4
- 229920002223 polystyrene Polymers 0.000 description 4
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 4
- PJMXUSNWBKGQEZ-UHFFFAOYSA-N (4-hydroxyphenyl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1=CC=C(O)C=C1 PJMXUSNWBKGQEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005160 1H NMR spectroscopy Methods 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- 229940090248 4-hydroxybenzoic acid Drugs 0.000 description 3
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical class NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- 229930185605 Bisphenol Natural products 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 3
- 239000007877 V-601 Substances 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
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- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
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- 125000005997 bromomethyl group Chemical group 0.000 description 3
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 3
- 150000001721 carbon Chemical group 0.000 description 3
- 239000012986 chain transfer agent Substances 0.000 description 3
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- 125000001046 glycoluril group Chemical class [H]C12N(*)C(=O)N(*)C1([H])N(*)C(=O)N2* 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
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- 239000003999 initiator Substances 0.000 description 3
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- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 3
- 239000011976 maleic acid Substances 0.000 description 3
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 125000003854 p-chlorophenyl group Chemical group [H]C1=C([H])C(*)=C([H])C([H])=C1Cl 0.000 description 3
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- 229910000027 potassium carbonate Inorganic materials 0.000 description 3
- 235000011181 potassium carbonates Nutrition 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 3
- 239000007870 radical polymerization initiator Substances 0.000 description 3
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- 125000005504 styryl group Chemical group 0.000 description 3
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- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 3
- HTZQBKXLNQEOHK-UHFFFAOYSA-N (2,6-difluorophenoxy)boronic acid Chemical compound OB(O)OC1=C(F)C=CC=C1F HTZQBKXLNQEOHK-UHFFFAOYSA-N 0.000 description 2
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- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- MRYQZMHVZZSQRT-UHFFFAOYSA-M tetramethylazanium;acetate Chemical compound CC([O-])=O.C[N+](C)(C)C MRYQZMHVZZSQRT-UHFFFAOYSA-M 0.000 description 1
- IEVVGBFMAHJELO-UHFFFAOYSA-M tetramethylazanium;benzoate Chemical compound C[N+](C)(C)C.[O-]C(=O)C1=CC=CC=C1 IEVVGBFMAHJELO-UHFFFAOYSA-M 0.000 description 1
- 150000004897 thiazines Chemical class 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- 229950003937 tolonium Drugs 0.000 description 1
- HNONEKILPDHFOL-UHFFFAOYSA-M tolonium chloride Chemical compound [Cl-].C1=C(C)C(N)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 HNONEKILPDHFOL-UHFFFAOYSA-M 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- URAYPUMNDPQOKB-UHFFFAOYSA-N triacetin Chemical compound CC(=O)OCC(OC(C)=O)COC(C)=O URAYPUMNDPQOKB-UHFFFAOYSA-N 0.000 description 1
- 229960002622 triacetin Drugs 0.000 description 1
- 125000005409 triarylsulfonium group Chemical group 0.000 description 1
- 150000003628 tricarboxylic acids Chemical class 0.000 description 1
- 125000004784 trichloromethoxy group Chemical group ClC(O*)(Cl)Cl 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- 125000005580 triphenylene group Chemical group 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
- 125000001834 xanthenyl group Chemical class C1=CC=CC=2OC3=CC=CC=C3C(C12)* 0.000 description 1
- 150000007964 xanthones Chemical class 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- 229960001763 zinc sulfate Drugs 0.000 description 1
- 229910000368 zinc sulfate Inorganic materials 0.000 description 1
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Abstract
감도, 잔막률, 및 비유전율이 우수한 포지티브형 감광성 수지 조성물등의 제공.
(A) (a1) 산기가 산분해성기로 보호된 잔기를 갖는 반복단위, (a2) 옥시라닐기, 옥세타닐기, 또는 -NH-CH2-OR(R은 탄소수 1∼20의 알킬기이다)로부터 선택되는 기를 갖는 반복단위, 및 (a3) 측쇄 말단에 카르복실기를 갖고, 폴리머 주쇄와 상기 카르복실기를 연결하는 2가의 연결기의 원자수가 4 이상인 반복단위를 동일 또는 다른 중합체에 포함하는 중합체 성분, (B) 광산발생제, 및 (D) 용제를 함유하는 감광성 수지 조성물이다.Provision of a positive photosensitive resin composition having excellent sensitivity, residual film ratio, and relative dielectric constant.
(A) (a1) a repeating unit having an acid group protected by an acid-decomposable group, (a2) an oxiranyl group, an oxetanyl group, or -NH-CH 2 -OR (R is an alkyl group having 1 to 20 carbon atoms) A polymer component comprising a repeating unit having a selected group, and (a3) a repeating unit having a carboxyl group at the side chain terminal and having 4 or more atoms of a divalent linking group linking the polymer main chain and the carboxyl group in the same or different polymer, (B) It is a photosensitive resin composition containing a photoacid generator and (D) a solvent.
Description
본 발명은 감광성 수지 조성물, 경화막의 형성 방법, 경화막, 유기 EL 표시 장치, 및 액정 표시 장치에 관한 것이다. 더욱 상세하게는 액정 표시 장치, 유기 EL 표시 장치, 집적 회로 소자, 고체 촬상 소자 등의 전자부품의 평탄화막, 보호막이나 층간 절연막의 형성에 바람직한 포지티브형 감광성 수지 조성물 및 그것을 사용한 경화막의 형성 방법에 관한 것이다.The present invention relates to a photosensitive resin composition, a method for forming a cured film, a cured film, an organic EL display device, and a liquid crystal display device. More specifically, a planarizing film of an electronic component such as a liquid crystal display device, an organic EL display device, an integrated circuit element, a solid-state imaging device, a positive photosensitive resin composition suitable for forming a protective film or an interlayer insulating film, and a method for forming a cured film using the same will be.
박막 트랜지스터(이하, 「TFT」라고 기재한다)형 액정 표시 소자나 자기 헤드 소자, 집적 회로 소자, 고체 촬상 소자 등의 전자부품에는 일반적으로 층상으로 배치되는 배선 사이를 절연하기 위해서 층간 절연막이 형성되어 있다. 층간 절연막을 형성하는 재료로서는 필요로 하는 패턴 형상을 얻기 위한 공정수가 적고 또한 충분한 평탄성을 갖는 것이 바람직한 점에서 감광성 수지 조성물이 폭넓게 사용되고 있다.In the electronic components such as thin film transistor (hereinafter referred to as "TFT") type liquid crystal display elements, magnetic head elements, integrated circuit elements, and solid-state imaging elements, an interlayer insulating film is generally formed to insulate between wirings arranged in layers. have. As a material for forming the interlayer insulating film, a photosensitive resin composition is widely used in that it is desirable to have a small number of steps for obtaining the required pattern shape and to have sufficient flatness.
구체적으로는 감광성 수지 조성물로서는 아세탈 구조 및/또는 케탈 구조, 및 에폭시 구조를 갖는 수지와, 광산발생제를 포함하는 조성물(일본 특허 공개 2004-264623호 공보)이 알려져 있다. 그러나, 상기 조성물은 포스트 익스포저 베이킹(PEB)을 행하지 않으면 현상할 수 없으므로 적용 범위가 한정된다. 또한, 일본 특허 공개 2004-264623호 공보에 기재된 조성물은 내열성, 현상 마진이 우수하지만, 저감도이며, 잔막성에 문제가 있다. Specifically, as a photosensitive resin composition, a composition comprising a resin having an acetal structure and / or a ketal structure and an epoxy structure and a photoacid generator (Japanese Patent Publication No. 2004-264623) is known. However, the composition cannot be developed without post exposure baking (PEB), so the scope of application is limited. In addition, the composition disclosed in Japanese Patent Laid-Open No. 2004-264623 has excellent heat resistance and development margin, but is low in sensitivity and has a problem with residual film properties.
또한, 산의 작용에 의해 분해되어 알칼리 가용성기를 발생시키는 기를 갖는 반복단위, 및 가열에 의해 수지 사이를 가교하는 관능기를 갖는 반복단위를 갖는 수지와, 광산발생제를 포함하는 조성물(일본 특허 공개 2009-288343호 공보)이 알려져 있다. 그러나, 상기 조성물은 더블 패터닝법으로 사용하는 것을 전제로 하고 있기 때문에 적용 범위가 한정된다. 또한, 일본 특허 공개 2009-288343호 공보에 기재된 조성물은 잔막성, 비유전율에 문제가 있다.Further, a composition comprising a repeating unit having a group that is decomposed by the action of an acid to generate an alkali-soluble group, and a resin having a repeating unit having a functional group that crosslinks between resins by heating, and a photoacid generator (Japanese Patent Publication 2009 -288343 publication) is known. However, the scope of application is limited because the composition is premised to be used by the double patterning method. In addition, the composition disclosed in Japanese Patent Laid-Open Publication No. 2009-288343 has problems in residual film properties and relative dielectric constant.
또한, 중합체에 락톤 골격 또는 나프탈렌 골격을 갖는 구성 단위를 함유하는 수지를 포함하는 중합체(일본 특허 공개 2008-95087호 공보)가 알려져 있다. 일본 특허 공개 2008-95087호 공보에 기재된 중합체는 ArF 레이저를 사용하지 않으면 고감도를 발휘할 수 없다.Moreover, a polymer (Japanese Patent Publication No. 2008-95087 publication) containing a resin containing a structural unit having a lactone skeleton or a naphthalene skeleton in a polymer is known. The polymer disclosed in Japanese Patent Laid-Open Publication No. 2008-95087 cannot exhibit high sensitivity without using an ArF laser.
본원 발명은 상기 과제를 해결하는 것을 목적으로 한 것으로서, 감도, 잔막률, 및 비유전율이 우수한 포지티브형 감광성 수지 조성물을 제공하는 것을 목적으로 한다.An object of the present invention is to solve the above problems, and an object of the present invention is to provide a positive type photosensitive resin composition excellent in sensitivity, residual film ratio, and relative dielectric constant.
상기 과제 하에서 본원 발명자가 예의 검토를 행한 결과, 특정 2종류의 폴리머에 장쇄 카르복실산의 반복단위를 갖는 폴리머를 병용함으로써 산기의 운동성 향상과 막의 유리 전이점(Tg) 저하에 의한다고 보여지는 대폭적인 감도 향상과 잔막률 향상이 보여져서 상기 과제를 해결할 수 있는 것을 찾아냈다.As a result of intensive investigations by the inventors of the present invention under the above-mentioned problems, it is shown that the use of a polymer having a repeating unit of a long chain carboxylic acid in combination with a specific two kinds of polymers leads to an improvement in the mobility of the acid groups and a decrease in the glass transition point (Tg) of the membrane. An improvement in sensitivity and an improvement in residual film rate were shown, and it was found that the above problem could be solved.
상기 과제를 해결하기 위한 수단은 하기 [1]의 수단이며, 바람직하게는 하기 [2]∼[13]의 수단이다.The means for solving the above problems are the means of the following [1], preferably the means of the following [2] to [13].
[1] (A) (a1) 산기가 산분해성기로 보호된 잔기를 갖는 반복단위, (a2) 옥시라닐기, 옥세타닐기, 또는 -NH-CH2-OR(R은 탄소수 1∼20의 알킬기이다)로부터 선택되는 가교성기를 갖는 반복단위, 및 (a3) 측쇄 말단에 카르복실기를 갖고, 폴리머 주쇄와 상기 카르복실기를 연결하는 2가의 연결기의 원자수가 4 이상인 반복단위를 동일 또는 다른 중합체에 포함하는 중합체 성분,[1] (A) (a1) Recurring unit having an acid group protected by an acid-decomposable group, (a2) an oxiranyl group, an oxetanyl group, or -NH-CH 2 -OR (R is an alkyl group having 1 to 20 carbon atoms) A repeating unit having a crosslinkable group selected from), and (a3) a polymer having a carboxyl group at the end of the side chain and having a repeating unit having 4 or more atoms in the divalent linking group connecting the polymer main chain and the carboxyl group in the same or different polymer ingredient,
(B) 광산발생제, 및(B) a photoacid generator, and
(D) 용제를 함유하고,(D) contains a solvent,
상기 2가의 연결기는 -CR1 2-(R1은 수소원자 또는 메틸기를 나타낸다), -O-, -O-SO2-, -O-C(O)-, -C(O)-O-, -S-, -C(O)-, 치환기를 갖고 있어도 좋은 아미노기, 치환기를 갖고 있어도 좋은 페닐렌기, 또는 하기 (iv)의 구조로부터 선택되어 임의로 조합되는 기인 것을 특징으로 하는 감광성 수지 조성물.The divalent linking group is -CR 1 2- (R 1 represents a hydrogen atom or a methyl group), -O-, -O-SO 2- , -OC (O)-, -C (O) -O-,- A photosensitive resin composition characterized by S-, -C (O)-, an amino group which may have a substituent, a phenylene group which may have a substituent, or a group selected from structures of (iv) below and optionally combined.
(식(iv) 중, z는 0∼5의 정수를 나타낸다)(In formula (iv), z represents the integer of 0-5)
[2] [1]에 있어서, 상기 (A) 중합체 성분은 상기 반복단위(a2), 및 상기 반복단위(a3)를 포함하는 중합체를 갖는 감광성 수지 조성물.[2] The photosensitive resin composition according to [1], wherein the polymer component (A) has the repeating unit (a2) and a polymer containing the repeating unit (a3).
[3] [1] 또는 [2]에 있어서, 상기 (A) 중합체 성분은 상기 반복단위(a1), 상기 반복단위(a2), 및 상기 반복단위(a3)를 포함하는 중합체를 갖는 감광성 수지 조성물.[3] The photosensitive resin composition according to [1] or [2], wherein the polymer component (A) has the repeating unit (a1), the repeating unit (a2), and a polymer comprising the repeating unit (a3). .
[4] [1]∼[3] 중 어느 하나에 있어서, 화학 증폭 포지티브형 감광성 수지 조성물인 감광성 수지 조성물.[4] The photosensitive resin composition according to any one of [1] to [3], which is a chemically amplified positive type photosensitive resin composition.
[5] [1]∼[4] 중 어느 하나에 있어서, 상기 반복단위(a3)는 일반식(i)∼(iii)으로 나타내어지는 반복단위를 1종 이상 포함하는 감광성 수지 조성물.[5] The photosensitive resin composition according to any one of [1] to [4], wherein the repeating unit (a3) contains at least one repeating unit represented by formulas (i) to (iii).
(일반식(i)∼(iii) 중, R1은 수소원자 또는 메틸기를 나타내고, L은 원자수가 4 이상인 2가의 연결기를 나타내고, R2는 할로겐원자, 수산기 또는 탄소수 1∼3의 알킬기를 나타내고, n은 0∼4의 정수를 나타낸다)(In the general formulas (i) to (iii), R 1 represents a hydrogen atom or a methyl group, L represents a divalent linking group having 4 or more atoms, and R 2 represents a halogen atom, a hydroxyl group, or an alkyl group having 1 to 3 carbon atoms. , n represents an integer from 0 to 4)
[6] [1]∼[5] 중 어느 하나에 있어서, 상기 반복단위(a1)는 일반식(A2')으로 나타내어지는 반복단위인 감광성 수지 조성물.[6] The photosensitive resin composition according to any one of [1] to [5], wherein the repeating unit (a1) is a repeating unit represented by the general formula (A2 ').
(일반식(A2') 중, R1 및 R2는 각각 수소원자, 알킬기 또는 아릴기를 나타내고, 적어도 R1 및 R2 중 어느 하나가 알킬기 또는 아릴기이며, R3은 알킬기 또는 아릴기를 나타내고, R1 또는 R2와, R3이 연결되어 환상 에테르를 형성해도 좋고, R4는 수소원자 또는 메틸기를 나타내고, X는 단결합 또는 아릴렌기를 나타낸다)(In the general formula (A2 '), R 1 and R 2 each represents a hydrogen atom, an alkyl group or an aryl group, at least one of R 1 and R 2 is an alkyl group or an aryl group, and R 3 represents an alkyl group or an aryl group, R 1 or R 2 and R 3 may be connected to form a cyclic ether, R 4 represents a hydrogen atom or a methyl group, and X represents a single bond or an arylene group)
[7] [1]∼[6] 중 어느 하나에 있어서, 상기 반복단위(a2)는 일반식(2)으로 나타내어지는 반복단위인 감광성 수지 조성물.[7] The photosensitive resin composition according to any one of [1] to [6], wherein the repeating unit (a2) is a repeating unit represented by formula (2).
(일반식(2) 중, R1은 수소원자 또는 메틸기를 나타내고, R2는 탄소수 1∼20의 알킬기를 나타낸다)(In the general formula (2), R 1 represents a hydrogen atom or a methyl group, and R 2 represents an alkyl group having 1 to 20 carbon atoms)
[8] [1]∼[7] 중 어느 하나에 있어서, 상기 반복단위(a2)는 옥시라닐기 및/또는 옥세타닐기를 갖는 반복단위인 감광성 수지 조성물.[8] The photosensitive resin composition according to any one of [1] to [7], wherein the repeating unit (a2) is a repeating unit having an oxiranyl group and / or an oxetanyl group.
[9] (1) [1]∼[8] 중 어느 하나에 기재된 감광성 수지 조성물을 기판 상에 적용하는 공정,[9] (1) The step of applying the photosensitive resin composition according to any one of [1] to [8] on a substrate,
(2) 적용된 감광성 수지 조성물로부터 용제를 제거하는 공정,(2) process of removing the solvent from the applied photosensitive resin composition,
(3) 활성 방사선으로 노광하는 공정,(3) Process of exposing with active radiation,
(4) 수성 현상액으로 현상하는 공정, 및(4) Process for developing with an aqueous developer, and
(5) 열경화하는 포스트 베이킹 공정을 포함하는 것을 특징으로 하는 경화막의 제조 방법.(5) A method for producing a cured film comprising a post-baking step of thermosetting.
[10] [9]에 있어서, 상기 현상 공정 후이고 포스트 베이킹 공정 전에, 전면 노광하는 공정을 포함하는 경화막의 형성 방법.[10] The method for forming a cured film according to [9], comprising a step of exposing the entire surface after the developing step and before the post-baking step.
[11] [1]∼[8] 중 어느 한 항에 기재된 감광성 수지 조성물을 경화해서 이루어지는 경화막.[11] A cured film obtained by curing the photosensitive resin composition according to any one of [1] to [8].
[12] [11]에 있어서, 층간 절연막인 경화막.[12] The cured film according to [11], which is an interlayer insulating film.
[13] [11] 또는 [12]의 경화막을 갖는 액정 표시 장치 또는 유기 EL 표시 장치.[13] A liquid crystal display device or an organic EL display device having the cured film of [11] or [12].
(발명의 효과)(Effects of the Invention)
본 발명에 의하면, 감도, 잔막률, 및 비유전율이 우수한 포지티브형 감광성 수지 조성물, 패턴의 제조 방법, 유기 EL 표시 장치, 액정 표시 장치의 제조 방법 및 경화막을 제공할 수 있다.ADVANTAGE OF THE INVENTION According to this invention, the positive photosensitive resin composition excellent in sensitivity, residual film rate, and relative dielectric constant, the manufacturing method of a pattern, the organic EL display device, the manufacturing method of a liquid crystal display device, and the cured film can be provided.
도 1은 유기 EL 표시 장치의 일례의 구성 개념도를 나타낸다. 보텀 이미션형의 유기 EL 표시 장치에 있어서의 기판의 모식적 단면도를 나타내고, 평탄화막(4)을 갖고 있다.
도 2는 액정 표시 장치의 일례의 구성 개념도를 나타낸다. 액정 표시 장치에 있어서의 액티브 매트릭스 기판의 모식적 단면도를 나타내고, 층간 절연막인 경화막(17)을 갖고 있다.1 shows a conceptual view of a configuration of an example of an organic EL display device. A schematic cross-sectional view of a substrate in a bottom emission type organic EL display device is shown, and a flattening film 4 is provided.
2 shows a conceptual view of a configuration of an example of a liquid crystal display device. It shows a schematic cross section of the active matrix substrate in a liquid crystal display device, and has a cured
이하에 있어서, 본 발명의 내용에 대해서 상세하게 설명한다. 이하에 기재하는 구성 요건의 설명은 본 발명의 대표적인 실시형태에 의거해서 이루어지는 경우가 있지만, 본 발명은 그러한 실시형태에 한정되는 것은 아니다. 또한, 본원 명세서에 있어서 「∼」란 그 전후에 기재되는 수치를 하한값 및 상한값으로서 포함하는 의미로 사용된다. 또한, 본 발명에 있어서의 유기 EL 표시 장치란 유기 일렉트로 루미네센스 표시 장치(유기 일렉트로 루미네센스 소자)를 말한다.Hereinafter, the content of the present invention will be described in detail. The description of the constitutional requirements described below may be made based on representative embodiments of the present invention, but the present invention is not limited to such embodiments. In addition, in this specification, "-" is used by the meaning including the numerical value described before and after that as a lower limit and an upper limit. Note that the organic EL display device in the present invention refers to an organic electroluminescence display device (organic electroluminescence element).
또한, (메타)아크릴산이란 아크릴산 및/또는 메타크릴산을 의미한다. In addition, (meth) acrylic acid means acrylic acid and / or methacrylic acid.
또한, 본 발명에 있어서 「알칼리 가용성」이란 화합물(수지)의 용액을 기판 상에 적용하고, 90℃에서 2분간 가열함으로써 형성되는 화합물(수지)의 막(두께 3㎛)의 23℃에 있어서의 0.4% 테트라메틸암모늄히드록시드 수용액에 대한 용해 속도가 0.01㎛/초 이상인 것을 말하고, 「알칼리 불용성」이란 화합물(수지)의 용액을 기판 상에 적용하고, 90℃에서 2분간 가열함으로써 형성되는 화합물(수지)의 막(두께 3㎛)의 23℃에 있어서의 0.4% 테트라메틸암모늄히드록시드 수용액에 대한 용해 속도가 0.01㎛/초 미만인 것을 말한다.In addition, in the present invention, the "alkali-soluble" solution of a compound (resin) is applied on a substrate, and heated at 90 ° C for 2 minutes at 23 ° C of a film (
[감광성 수지 조성물][Photosensitive resin composition]
본 발명의 감광성 수지 조성물은,The photosensitive resin composition of the present invention,
(A) (a1) 산기가 산분해성기로 보호된 잔기를 갖는 반복단위, (a2) 옥시라닐기, 옥세타닐기, 또는 -NH-CH2-OR(R은 탄소수 1∼20의 알킬기이다)로부터 선택되는 기를 갖는 반복단위, 및 (a3) 측쇄 말단에 카르복실기를 갖고, 폴리머 주쇄와 상기 카르복실기를 연결하는 2가의 연결기의 원자수가 4 이상인 반복단위를 동일 또는 다른 중합체에 포함하는 중합체 성분,(A) (a1) a repeating unit having an acid group protected by an acid-decomposable group, (a2) an oxiranyl group, an oxetanyl group, or -NH-CH 2 -OR (R is an alkyl group having 1 to 20 carbon atoms) A polymer component comprising a repeating unit having a selected group and (a3) a repeating unit having a carboxyl group at the side chain terminal and having 4 or more atoms of a divalent linking group linking the polymer main chain and the carboxyl group in the same or different polymer,
(B) 광산발생제, 및(B) a photoacid generator, and
(D) 용제를 함유하는 것을 특징으로 한다. (D) It is characterized by containing a solvent.
상기 (A)성분은,The component (A),
(1):반복단위(a1), 반복단위(a2), 및 반복단위(a3)를 공중합해서 이루어지는 형태,(1): Formation by copolymerizing the repeating unit (a1), repeating unit (a2), and repeating unit (a3),
(2):반복단위(a1)와 반복단위(a3)의 공중합체, 반복단위(a2)와 반복단위(a3)의 공중합체의 형태,(2): Copolymer of repeating unit (a1) and repeating unit (a3), copolymer of repeating unit (a2) and repeating unit (a3),
(3):반복단위(a1)를 포함하는 폴리머, 반복단위(a2)를 포함하는 폴리머, 및 반복단위(a3)를 포함하는 폴리머의 형태,(3): the form of a polymer containing a repeating unit (a1), a polymer containing a repeating unit (a2), and a polymer containing a repeating unit (a3),
(4):반복단위(a1)와 반복단위(a3)의 공중합체, 반복단위(a2)를 포함하는 폴리머의 형태,(4): Copolymer of repeating unit (a1) and repeating unit (a3), form of polymer comprising repeating unit (a2),
(5):반복단위(a2)와 반복단위(a3)의 공중합체, 반복단위(a1)를 포함하는 폴리머의 형태, 및(5): Copolymer of repeating unit (a2) and repeating unit (a3), form of polymer comprising repeating unit (a1), and
(6):반복단위(a1)와 반복단위(a2)의 공중합체, 반복단위(a3)를 포함하는 폴리머의 형태를 들 수 있다.(6): Examples of the copolymer of the repeating unit (a1) and the repeating unit (a2) and the form of a polymer containing the repeating unit (a3).
이들의 형태 중에서도 (1), (3)∼(4), 및 (6)의 형태가 바람직하다.Among these forms, the forms (1), (3) to (4), and (6) are preferred.
상기 (A)성분은 이들 형태를 복수종 포함하고 있어도 좋고, 또한, 다른 반복단위(a4)를 포함하고 있어도 좋다.The said (A) component may contain multiple types of these forms, and may also contain another repeating unit (a4).
이하, 본 발명의 감광성 수지 조성물의 각 성분에 대해서 설명한다.Hereinafter, each component of the photosensitive resin composition of this invention is demonstrated.
<(A)성분><(A) component>
본 발명의 감광성 수지 조성물(이하, 본 발명의 감광성 조성물 또는 본 발명의 조성물이라고도 한다)은 (A)성분으로서 반복단위(a1), 반복단위(a2), 및 반복단위(a3)를 동일 또는 다른 중합체에 포함한다.The photosensitive resin composition of the present invention (hereinafter also referred to as the photosensitive composition of the present invention or the composition of the present invention) is the same or different repeating unit (a1), repeating unit (a2), and repeating unit (a3) as (A) component We include in polymer.
(A)성분은 상기 반복단위(a1)∼(a3) 이외에도 그 밖의 구성(반복)단위(a4)를 함유하고 있어도 좋다.The component (A) may contain other structural (repeating) units (a4) other than the repeating units (a1) to (a3).
[반복단위(a1)][Repeat unit (a1)]
(A)성분이 구성 단위(a1)를 가짐으로써 매우 고감도의 감광성 수지 조성물로 할 수 있다.(A) When a component has a structural unit (a1), it can be set as the highly sensitive photosensitive resin composition.
본 발명에 있어서의 「산기가 산분해성기로 보호된 잔기」는 카르복실기가 아세탈로 보호된 잔기, 산기가 케탈로 보호된 잔기, 산기가 제3급 알킬기로 보호된 잔기, 또는 산기가 제3급 알킬카보네이트기로 보호된 잔기이다.In the present invention, "a residue in which the acid group is protected with an acid-decomposable group" refers to a residue in which the carboxyl group is protected with acetal, a residue in which the acid group is protected with a ketal, a residue in which the acid group is protected with a tertiary alkyl group, or a tertiary alkyl with an acid group. It is a residue protected with a carbonate group.
산기로서는 카르복실기, 및 페놀성 수산기를 바람직하게 들 수 있다.Examples of the acid group include a carboxyl group and a phenolic hydroxyl group.
또한, 산기가 산분해성기로 보호된 잔기로서 구체적으로는 예를 들면, 후술하는 식(A1)으로 나타내어지는 기의 에스테르 구조, 테트라히드로피라닐에스테르기, 또는 테트라히드로푸라닐에스테르기 등의 아세탈 또는 케탈계 관능기나, t-부틸에스테르기, t-부틸카보네이트기 등의 제3급 알킬계 관능기를 들 수 있다.In addition, specifically, as the residue in which the acid group is protected with an acid-decomposable group, acetal such as an ester structure, a tetrahydropyranyl ester group, or a tetrahydrofuranyl ester group of a group represented by formula (A1) described later, or And tertiary alkyl-based functional groups such as ketal-based functional groups, t-butyl ester groups, and t-butyl carbonate groups.
(a1) 산기가 산분해성기로 보호된 잔기를 갖는 구성 단위는 산분해성기로 보호된 보호 카르복실기를 갖는 구성 단위, 또는 산분해성기로 보호된 보호 페놀성 수산기를 갖는 구성 단위인 것이 바람직하다.(a1) It is preferable that the structural unit which has the residue whose acid group was protected by the acid-decomposable group is a structural unit which has the protective carboxyl group protected by the acid-decomposable group, or the structural unit which has the protective phenolic hydroxyl group protected by the acid-decomposable group.
이하, 산분해성기로 보호된 보호 카르복실기를 갖는 구성 단위(a1-1)와, 산분해성기로 보호된 보호 페놀성 수산기를 갖는 구성 단위(a1-2)에 대해서 순서대로 각각 설명한다.Hereinafter, the structural unit (a1-1) having a protective carboxyl group protected by an acid-decomposable group and the structural unit (a1-2) having a protective phenolic hydroxyl group protected by an acid-decomposable group are respectively described in order.
<<<(a1-1)산분해성기로 보호된 보호 카르복실기를 갖는 구성 단위>>><<< Constituent unit having a protective carboxyl group protected by (a1-1) acid-decomposable group >>>
상기 산분해성기로 보호된 보호 카르복실기를 갖는 구성 단위(a1-1)는 카르복실기를 갖는 구성 단위의 상기 카르복실기가 이하에 상세하게 설명하는 산분해성기에 의해 보호된 보호 카르복실기를 갖는 구성 단위이다.The structural unit (a1-1) having a protective carboxyl group protected by the acid-decomposable group is a structural unit having a protective carboxyl group protected by an acid-decomposable group described in detail below.
상기 산분해성기로 보호된 보호 카르복실기를 갖는 구성 단위(a1-1)에 사용할 수 있는 상기 카르복실기를 갖는 구성 단위로서는 특별히 제한은 없고 공지의 구성 단위를 사용할 수 있다. 예를 들면, 불포화 모노 카르복실산, 불포화 디카르복실산, 불포화 트리카르복실산 등의 분자 중에 적어도 1개의 카르복실기를 갖는 불포화 카르복실산 등에 유래하는 구성 단위(a1-1-1)나, 에틸렌성 불포화기와 산무수물 유래의 구조를 모두 갖는 구성 단위(a1-1-2)를 들 수 있다.There is no restriction | limiting in particular as a structural unit which has the said carboxyl group which can be used for the structural unit (a1-1) which has the protective carboxyl group protected by the said acid-decomposable group, A well-known structural unit can be used. For example, a structural unit (a1-1-1) derived from an unsaturated carboxylic acid having at least one carboxyl group in a molecule such as an unsaturated mono carboxylic acid, an unsaturated dicarboxylic acid, an unsaturated tricarboxylic acid, or ethylene The structural unit (a1-1-2) which has both the structure derived from an unsaturated group and an acid anhydride is mentioned.
이하, 상기 카르복실기를 갖는 구성 단위로서 사용되는 (a1-1-1)분자 중에 적어도 1개의 카르복실기를 갖는 불포화 카르복실산 등에 유래하는 구성 단위와, (a1-1-2)에틸렌성 불포화기와 산무수물 유래의 구조를 모두 갖는 구성 단위에 대해서 각각 순서대로 설명한다.Hereinafter, a structural unit derived from an unsaturated carboxylic acid or the like having at least one carboxyl group in the (a1-1-1) molecule used as the structural unit having the carboxyl group, and (a1-1-2) ethylenically unsaturated group and acid anhydride Structural units having all of the derived structures will be described in order, respectively.
<<<<(a1-1-1)분자 중에 적어도 1개의 카르복실기를 갖는 불포화 카르복실산 등에 유래하는 구성 단위>>>><<<< Constituent unit derived from unsaturated carboxylic acid or the like having at least one carboxyl group in the (a1-1-1) molecule >>>>
상기 분자 중에 적어도 1개의 카르복실기를 갖는 불포화 카르복실산 등에 유래하는 구성 단위(a1-1-1)로서 본 발명에서 사용되는 불포화 카르복실산으로서는 이하에 열거한 것이 사용된다. 즉, 불포화 모노 카르복실산으로서는 예를 들면, 아크릴산, 메타크릴산, 크로톤산, α-클로로아크릴산, 계피산 등을 들 수 있다. 또한, 불포화 디카르복실산으로서는 예를 들면, 말레산, 푸말산, 이타콘산, 시트라콘산, 메사콘산 등을 들 수 있다. 또한, 카르복실기를 갖는 구성 단위를 얻기 위해서 사용되는 불포화 다가 카르복실산은 그 산무수물이어도 좋다. 구체적으로는 무수 말레산, 무수 이타콘산, 무수 시트라콘산 등을 들 수 있다. 또한, 불포화 다가 카르복실산은 다가 카르복실산의 모노(2-메타크릴로일옥시알킬)에스테르이어도 좋고, 예를 들면, 숙신산 모노(2-아크릴로일옥시에틸), 숙신산 모노(2-메타크릴로일옥시에틸), 프탈산 모노(2-아크릴로일옥시에틸), 프탈산 모노(2-메타크릴로일옥시에틸) 등을 들 수 있다. 또한, 불포화 다가 카르복실산은 그 양 말단 디카르복시폴리머의 모노(메타)아크릴레이트이어도 좋고, 예를 들면, ω-카르복시폴리카프로락톤모노아크릴레이트, ω-카르복시폴리카프로락톤모노메타크릴레이트 등을 들 수 있다. 또한, 불포화 카르복실산으로서는 아크릴산-2-카르복시에틸에스테르, 메타크릴산-2-카르복시에틸에스테르, 말레산 모노알킬에스테르, 푸말산 모노알킬에스테르, 4-카르복시스티렌 등도 사용할 수 있다. As the structural unit (a1-1-1) derived from an unsaturated carboxylic acid having at least one carboxyl group in the molecule and the like, the unsaturated carboxylic acid used in the present invention is used below. That is, examples of the unsaturated mono carboxylic acid include acrylic acid, methacrylic acid, crotonic acid, α-chloroacrylic acid, and cinnamic acid. Moreover, as an unsaturated dicarboxylic acid, maleic acid, fumaric acid, itaconic acid, citraconic acid, mesaconic acid etc. are mentioned, for example. Moreover, the acidic anhydride may be sufficient as the unsaturated polycarboxylic acid used for obtaining the structural unit which has a carboxyl group. Specifically, maleic anhydride, itaconic anhydride, citraconic anhydride, etc. are mentioned. Moreover, the unsaturated polyhydric carboxylic acid may be mono (2-methacryloyloxyalkyl) ester of polyhydric carboxylic acid, for example, mono succinic acid (2-acryloyloxyethyl), mono succinic acid (2-methacryl). Royloxyethyl), phthalic acid mono (2-acryloyloxyethyl), phthalic acid mono (2-methacryloyloxyethyl), and the like. Moreover, the unsaturated polyvalent carboxylic acid may be a mono (meth) acrylate of both terminal dicarboxy polymers, for example, ω-carboxypolycaprolactone monoacrylate, ω-carboxypolycaprolactone monomethacrylate, etc. You can. Moreover, as an unsaturated carboxylic acid, acrylic acid-2-carboxyethyl ester, methacrylic acid-2-carboxyethyl ester, maleic acid monoalkyl ester, fumaric acid monoalkyl ester, 4-carboxystyrene, etc. can also be used.
그 중에서도 현상성의 관점에서 상기 분자 중에 적어도 1개의 카르복실기를 갖는 불포화 카르복실산 등에 유래하는 구성 단위(a1-1-1)를 형성하기 위해서는 아크릴산, 메타크릴산, 또는 불포화 다가 카르복실산의 무수물 등을 사용하는 것이 바람직하고, 아크릴산 또는 메타크릴산을 사용하는 것이 보다 바람직하다. Among them, in order to form a structural unit (a1-1-1) derived from an unsaturated carboxylic acid or the like having at least one carboxyl group in the molecule from the viewpoint of developability, acrylic acid, methacrylic acid, or anhydride of an unsaturated polycarboxylic acid, etc. It is preferable to use, and it is more preferable to use acrylic acid or methacrylic acid.
상기 분자 중에 적어도 1개의 카르복실기를 갖는 불포화 카르복실산 등에 유래하는 구성 단위(a1-1-1)는 1종 단독으로 구성되어 있어도 좋고, 2종 이상으로 구성되어 있어도 좋다.The structural unit (a1-1-1) derived from an unsaturated carboxylic acid having at least one carboxyl group in the molecule or the like may be composed of one type alone, or two or more types.
<<<<(a1-1-2)에틸렌성 불포화기와 산무수물 유래의 구조를 모두 갖는 구성 단위>>>><<<< (a1-1-2) Structural unit having both an ethylenically unsaturated group and an acid anhydride-derived structure >>>>
에틸렌성 불포화기와 산무수물 유래의 구조를 모두 갖는 구성 단위(a1-1-2)는 에틸렌성 불포화기를 갖는 구성 단위 중에 존재하는 수산기와 산무수물을 반응시켜서 얻어진 모노머에 유래하는 단위인 것이 바람직하다.It is preferable that the structural unit (a1-1-2) which has both the ethylenic unsaturated group and the structure derived from an acid anhydride is a unit derived from the monomer obtained by reacting the hydroxyl group and the acid anhydride present in the structural unit having an ethylenically unsaturated group.
상기 산무수물로서는 공지의 것을 사용할 수 있고, 구체적으로는 무수 말레산, 무수 숙신산, 무수 이타콘산, 무수 프탈산, 테트라히드로 무수 프탈산, 헥사히드로 무수 프탈산, 무수 클로렌드산 등의 이염기산 무수물; 무수 트리멜리트산, 무수 피로멜리트산, 벤조페논테트라카르복실산 무수물, 비페닐테트라카르복실산 무수물 등의 산무수물을 들 수 있다. 이들 중에서는 현상성의 관점에서 무수 프탈산, 테트라히드로 무수 프탈산, 또는 무수 숙신산이 바람직하다.As the acid anhydride, a known one can be used, and specifically, dibasic acid anhydrides such as maleic anhydride, succinic anhydride, itaconic anhydride, phthalic anhydride, phthalic anhydride tetrahydro, phthalic anhydride hexahydrophthalic anhydride and chlorendic anhydride; And acid anhydrides such as trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic anhydride, and biphenyltetracarboxylic anhydride. Of these, phthalic anhydride, tetrahydro phthalic anhydride, or succinic anhydride is preferred from the viewpoint of developability.
상기 산무수물의 수산기에 대한 반응율은 현상성의 관점에서 바람직하게는 10∼100몰%, 보다 바람직하게는 30∼100몰%이다.The reaction rate of the acid anhydride to a hydroxyl group is preferably 10 to 100 mol%, more preferably 30 to 100 mol% from the viewpoint of developability.
<<<<구성 단위(a1-1)에 사용할 수 있는 산분해성기>>>><<<< An acid-decomposable group that can be used in the structural unit (a1-1) >>>>
상기 산분해성기로 보호된 보호 카르복실기를 갖는 구성 단위(a1-1)에 사용할 수 있는 상기 산분해성기로서는 지금까지 KrF용 포지티브형 레지스트, ArF용 포지티브형 레지스트에 있어서의 산분해성기로서 공지의 것을 사용할 수 있고, 특별히 한정되지 않는다. 종래, 산분해성기로서는 산에 의해 비교적 분해되기 쉬운 기(예를 들면, 테트라히드로피라닐기 등의 아세탈계 관능기)나 산에 의해 비교적 분해되기 어려운 기(예를 들면, tert-부틸에스테르기, tert-부틸카보네이트기 등의 tert-부틸계 관능기)가 알려져 있다.As the acid-decomposable group that can be used for the structural unit (a1-1) having a protective carboxyl group protected by the acid-decomposable group, conventionally known as the acid-decomposable groups in the positive resist for KrF and the positive resist for ArF can be used. It may, and is not particularly limited. Conventionally, as an acid-decomposable group, a group that is relatively easily decomposed by an acid (for example, an acetal-based functional group such as tetrahydropyranyl group) or a group that is relatively difficult to decompose by an acid (for example, tert-butyl ester group, tert -Tert-butyl functional groups such as butyl carbonate groups) are known.
이들의 산분해성기 중에서도 카르복실기가 아세탈 또는 케탈로 보호된 보호 카르복실기, 또는 카르복실기가 케탈로 보호된 보호 카르복실기를 갖는 구성 단위인 것이 레지스트의 기본 물성, 특히 감도나 패턴 형상, 콘택트 홀의 형성성, 감광성 수지 조성물의 보존 안정성의 관점에서 바람직하다. 또한 산분해성기 중에서도 카르복실기가 하기 일반식(a1-1)으로 나타내어지는 아세탈 또는 케탈로 보호된 보호 카르복실기인 것이 감도의 관점에서 보다 바람직하다. 또한, 카르복실기가 하기 일반식(a1-1)으로 나타내어지는 아세탈 또는 케탈로 보호된 보호 카르복실기인 경우 보호 카르복실기의 전체로서는 -(C=O)-O-CR101R102(OR103)의 구조로 되어 있다.Among these acid-decomposable groups, the basic properties of the resist, in particular, sensitivity or pattern shape, contact hole formation, photosensitive resin, is a structural unit having a protective carboxyl group protected by acetal or ketal, or a protective carboxyl group protected by ketal. It is preferable from the viewpoint of storage stability of the composition. Further, among the acid-decomposable groups, it is more preferable from the viewpoint of sensitivity that the carboxyl group is a protective carboxyl group protected by acetal or ketal represented by the following general formula (a1-1). In addition, when the carboxyl group is a protective carboxyl group protected by acetal or ketal represented by the following general formula (a1-1), the entire protective carboxyl group has a structure of-(C = O) -O-CR 101 R 102 (OR 103 ) It is done.
일반식(a1-1)General formula (a1-1)
(식(a1-1) 중, R101 및 R102는 각각 독립적으로 수소원자 또는 알킬기를 나타내고, 단, R101과 R102가 모두 수소원자인 경우를 제외한다. R103은 알킬기를 나타낸다. R101 또는 R102와, R103이 연결되어 환상 에테르를 형성해도 좋다)(In formula (a1-1), R 101 and R 102 each independently represent a hydrogen atom or an alkyl group, except that R 101 and R 102 are both hydrogen atoms. R 103 represents an alkyl group. R 101 or R 102 and R 103 may be connected to form a cyclic ether)
상기 일반식(a1-1) 중, R101∼R103은 각각 독립적으로 수소원자 또는 알킬기를 나타내고, 상기 알킬기는 직쇄상, 분기쇄상, 환상 중 어느 것이라도 좋다. 여기에서, R101 및 R102의 쌍방이 수소원자를 나타내는 경우는 없고, R101 및 R102 중 적어도 한쪽은 알킬기를 나타낸다.In the general formula (a1-1), R 101 to R 103 each independently represent a hydrogen atom or an alkyl group, and the alkyl group may be either linear, branched or cyclic. Here, in the case where both of R 101 and R 102 represent a hydrogen atom is not, at least one of R 101 and R 102 represents an alkyl group.
상기 일반식(a1-1)에 있어서 R101, R102 및 R103이 알킬기를 나타내는 경우, 상기 알킬기는 직쇄상, 분기쇄상 또는 환상 중 어느 것이어도 좋다.When R 101 , R 102 and R 103 in the general formula (a1-1) represent an alkyl group, the alkyl group may be linear, branched or cyclic.
상기 직쇄상 또는 분기쇄상의 알킬기로서는 탄소수 1∼12인 것이 바람직하고, 탄소수 1∼6인 것이 보다 바람직하고, 탄소수 1∼4인 것이 더욱 바람직하다. 구체적으로는 메틸기, 에틸기, n-프로필기, i-프로필기, n-부틸기, i-부틸기, sec-부틸기, tert-부틸기, n-펜틸기, 네오펜틸기, n-헥실기, 텍실기(2,3-디메틸-2-부틸기), n-헵틸기, n-옥틸기, 2-에틸헥실기, n-노닐기, n-데실기 등을 들 수 있다.The linear or branched alkyl group is preferably 1 to 12 carbon atoms, more preferably 1 to 6 carbon atoms, and even more preferably 1 to 4 carbon atoms. Specifically, methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, sec-butyl group, tert-butyl group, n-pentyl group, neopentyl group, n-hexyl group , Texyl group (2,3-dimethyl-2-butyl group), n-heptyl group, n-octyl group, 2-ethylhexyl group, n-nonyl group, n-decyl group and the like.
상기 환상 알킬기로서는 탄소수 3∼12인 것이 바람직하고, 탄소수 4∼8인 것이 보다 바람직하고, 탄소수 4∼6인 것이 더욱 바람직하다. 상기 환상 알킬기로서는 예를 들면 시클로프로필기, 시클로부틸기, 시클로펜틸기, 시클로헥실기, 시클로헵틸기, 시클로옥틸기, 노르보르닐기, 이소보르닐기 등을 들 수 있다.The cyclic alkyl group preferably has 3 to 12 carbon atoms, more preferably 4 to 8 carbon atoms, and even more preferably 4 to 6 carbon atoms. As said cyclic alkyl group, cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, norbornyl group, isobornyl group etc. are mentioned, for example.
상기 알킬기는 치환기를 갖고 있어도 좋고, 치환기로서는 할로겐원자, 아릴기, 알콕시기를 예시할 수 있다. 치환기로서 할로겐원자를 갖을 경우, R101, R102, R103은 할로알킬기가 되고, 치환기로서 아릴기를 갖을 경우, R101, R102, R103은 아랄킬기가 된다.The said alkyl group may have a substituent, and a halogen atom, an aryl group, and an alkoxy group can be illustrated as a substituent. When having a halogen atom as a substituent, R 101 , R 102 , R 103 become a haloalkyl group, and when having aryl group as a substituent, R 101 , R 102 , R 103 become an aralkyl group.
상기 할로겐원자로서는 불소원자, 염소원자, 브롬원자, 요오드원자가 예시되고, 이들 중에서도 불소원자 또는 염소원자가 바람직하다.Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and among these, a fluorine atom or a chlorine atom is preferable.
또한, 상기 아릴기로서는 탄소수 6∼20의 아릴기가 바람직하고, 보다 바람직하게는 탄소수 6∼12이며, 구체적으로는 페닐기, α-메틸페닐기, 나프틸기 등을 예시할 수 있고, 아릴기로 치환된 알킬기 전체, 즉, 아랄킬기로서는 벤질기, α-메틸벤질기, 페네틸기, 나프틸메틸기 등을 예시할 수 있다.Moreover, as said aryl group, a C6-C20 aryl group is preferable, More preferably, it is C6-C12, Specifically, a phenyl group, alpha-methylphenyl group, naphthyl group, etc. can be illustrated, The alkyl group substituted by the aryl group As a whole, that is, an aralkyl group, a benzyl group, an α-methylbenzyl group, a phenethyl group, a naphthylmethyl group, etc. can be illustrated.
상기 알콕시기로서는 탄소수 1∼6의 알콕시기가 바람직하고, 보다 바람직하게는 탄소수 1∼4이며, 메톡시기 또는 에톡시기가 보다 바람직하다. The alkoxy group is preferably an alkoxy group having 1 to 6 carbon atoms, more preferably 1 to 4 carbon atoms, and more preferably a methoxy group or an ethoxy group.
또한, 상기 알킬기가 시클로알킬기인 경우, 상기 시클로알킬기는 치환기로서 탄소수 1∼10의 직쇄상 또는 분기쇄상의 알킬기를 갖고 있어도 좋고, 알킬기가 직쇄상 또는 분기쇄상의 알킬기인 경우에는 치환기로서 탄소수 3∼12의 시클로알킬기를 갖고 있어도 좋다.Moreover, when the said alkyl group is a cycloalkyl group, the said cycloalkyl group may have a C1-C10 linear or branched alkyl group as a substituent, and when the alkyl group is a linear or branched alkyl group, it has 3 ~ You may have 12 cycloalkyl groups.
이들 치환기는 상기 치환기로 더 치환되어 있어도 좋다.These substituents may be further substituted with the above substituents.
상기 일반식(a1-1)에 있어서 R101, R102 및 R103이 아릴기를 나타내는 경우, 상기 아릴기는 탄소수 6∼12인 것이 바람직하고, 탄소수 6∼10인 것이 보다 바람직하다. 상기 아릴기는 치환기를 갖고 있어도 좋고, 상기 치환기로서는 탄소수 1∼6의 알킬기를 바람직하게 예시할 수 있다. 아릴기로서는 예를 들면, 페닐기, 톨릴기, 실릴기, 쿠메닐기, 1-나프틸기 등을 예시할 수 있다.In the general formula (a1-1), when R 101 , R 102 and R 103 represent an aryl group, the aryl group is preferably 6 to 12 carbon atoms, more preferably 6 to 10 carbon atoms. The aryl group may have a substituent, and as the substituent, an alkyl group having 1 to 6 carbon atoms can be preferably exemplified. As an aryl group, a phenyl group, a tolyl group, a silyl group, a cumenyl group, 1-naphthyl group, etc. can be illustrated, for example.
또한, R101, R102 및 R103은 서로 결합하고, 이들이 결합하고 있는 탄소원자와 하나로 합쳐져서 환을 형성할 수 있다. R101과 R102, R101과 R103 또는 R102와 R103이 결합한 경우의 환구조로서는 예를 들면 시클로부틸기, 시클로펜틸기, 시클로헥실기, 시클로헵틸기, 테트라히드로푸라닐기, 아다만틸기 및 테트라히드로피라닐기 등을 들 수 있다.In addition, R 101 , R 102 and R 103 are bonded to each other, and they may be combined with one carbon atom to which they are attached to form a ring. As the ring structure when R 101 and R 102 , R 101 and R 103 or R 102 and R 103 are bonded, for example, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, tetrahydrofuranyl group, adamantine And til groups and tetrahydropyranyl groups.
또한, 상기 일반식(a1-1)에 있어서 R101 및 R102 중 어느 하나가 수소원자 또는 메틸기인 것이 바람직하다. In addition, in the general formula (a1-1), it is preferable that any one of R 101 and R 102 is a hydrogen atom or a methyl group.
상기 일반식(a1-1)으로 나타내어지는 보호 카르복실기를 갖는 구성 단위를 형성하기 위해서 사용되는 라디칼 중합성 단량체는 시판의 것을 사용해도 좋고, 공지의 방법으로 합성한 것을 사용할 수도 있다. 예를 들면, 하기에 나타낸 바와 같이 (메타)아크릴산을 산촉매의 존재 하에서 비닐에테르와 반응시킴으로써 합성할 수 있다. 이 반응은 모노머의 단계에서 행해도 좋고, 중합체로 하고 나서 행해도 좋다.A commercially available radical polymerizable monomer used to form a structural unit having a protective carboxyl group represented by the general formula (a1-1) may be used, or a synthesized one by a known method may be used. For example, as shown below, (meth) acrylic acid can be synthesized by reacting with vinyl ether in the presence of an acid catalyst. This reaction may be performed in the step of a monomer, or may be carried out after forming a polymer.
상기 스킴 중, R111은 수소원자 또는 알킬기를 나타내고, 상기 알킬기는 상기 일반식(a1-1)에 있어서 R101∼R103으로서 나타낸 알킬기와 같다. R111로서는 수소원자 또는 메틸기가 바람직하다.In the above scheme, R 111 represents a hydrogen atom or an alkyl group, and the alkyl group is the same as the alkyl group represented by R 101 to R 103 in the general formula (a1-1). R 111 is preferably a hydrogen atom or a methyl group.
R112 및 R113은 -CH(R112)(R113)으로서, 상기 일반식(a1-1)에 있어서의 R102와 동의이며, R114는 상기 일반식(a-1)에 있어서의 R101과 동의이며, R115는 상기 일반식(a1-1)에 있어서의 R103과 동의이며, 또한, 이들은 바람직한 범위도 같다.R 112 and R 113 are -CH (R 112 ) (R 113 ), which is synonymous with R 102 in the general formula (a1-1), and R 114 is R in the general formula (a-1). and 101 and consent, R 115 is R 103, and accept in the general formula (a1-1), also, all of which it is like a preferable range.
상기 합성은 (메타)아크릴산을 그 밖의 모노머와 미리 공중합시켜 놓고, 그 후에 산촉매의 존재 하에서 비닐에테르와 반응시켜도 좋다.In the above synthesis, (meth) acrylic acid may be previously copolymerized with other monomers, and then reacted with vinyl ether in the presence of an acid catalyst.
상기 산분해성기로 보호된 보호 카르복실기를 갖는 구성 단위(a1-1)의 제1의 바람직한 형태는 식(A2')으로 나타내어지는 구성 단위이다.The first preferred form of the structural unit (a1-1) having a protective carboxyl group protected by the acid-decomposable group is a structural unit represented by formula (A2 ').
식(A2')Expression (A2 ')
(식 중, R1 및 R2는 각각 수소원자, 알킬기 또는 아릴기를 나타내고, 적어도 R1 및 R2 중 어느 하나가 알킬기 또는 아릴기이며, R3은 알킬기 또는 아릴기를 나타내고, R1 또는 R2와, R3이 연결되어 환상 에테르를 형성해도 좋고, R4는 수소원자 또는 메틸기를 나타내고, X는 단결합 또는 아릴렌기를 나타낸다)(Wherein, R 1 and R 2 each represents a hydrogen atom, an alkyl group or an aryl group, at least one of R 1 and R 2 is an alkyl group or an aryl group, R 3 represents an alkyl group or an aryl group, R 1 or R 2 And, R 3 may be connected to form a cyclic ether, R 4 represents a hydrogen atom or a methyl group, and X represents a single bond or an arylene group)
R1 및 R2가 알킬기인 경우, 탄소수는 1∼10의 알킬기가 바람직하다. R1 및 R2가 아릴기인 경우, 페닐기가 바람직하다. R1 및 R2는 각각 수소원자 또는 탄소수 1∼4의 알킬기가 바람직하다.When R 1 and R 2 are alkyl groups, the alkyl group having 1 to 10 carbon atoms is preferable. When R 1 and R 2 are aryl groups, a phenyl group is preferred. R 1 and R 2 are preferably a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, respectively.
R3은 알킬기 또는 아릴기를 나타내고, 탄소수 1∼10의 알킬기가 바람직하고, 1∼6의 알킬기가 보다 바람직하다.R 3 represents an alkyl group or an aryl group, preferably an alkyl group having 1 to 10 carbon atoms, and more preferably an alkyl group having 1 to 6 carbon atoms.
X는 단결합 또는 아릴렌기를 나타내고, 단결합이 바람직하다.X represents a single bond or an arylene group, and a single bond is preferable.
상기 산분해성기로 보호된 보호 카르복실기를 갖는 구성 단위(a1-1)의 제2의 바람직한 형태는 하기 일반식의 구조단위이다.The second preferred form of the structural unit (a1-1) having a protective carboxyl group protected by the acid-decomposable group is a structural unit of the following general formula.
(식 중, R121은 수소원자 또는 탄소수 1∼4의 알킬기를 나타내고, L1은 카르보닐기 또는 페닐렌기를 나타내고, R122∼R128은 각각 독립적으로 수소원자 또는 탄소수 1∼4의 알킬기를 나타낸다)(Wherein, R 121 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, L 1 represents a carbonyl group or a phenylene group, and R 122 to R 128 each independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms)
R121은 수소원자 또는 메틸기가 바람직하다.R 121 is preferably a hydrogen atom or a methyl group.
L1은 카르보닐기가 바람직하다.L 1 is preferably a carbonyl group.
R122∼R128은 수소원자가 바람직하다.R 122 to R 128 are preferably a hydrogen atom.
상기 산분해성기로 보호된 보호 카르복실기를 갖는 구성 단위(a1-1)의 바람직한 구체예로서는 하기의 구성 단위를 예시할 수 있다. 또한, R은 수소원자 또는 메틸기를 나타낸다.The following structural unit can be illustrated as a preferable specific example of the structural unit (a1-1) which has the protective carboxyl group protected by the said acid-decomposable group. In addition, R represents a hydrogen atom or a methyl group.
<<<(a1-2)산분해성기로 보호된 보호 페놀성 수산기를 갖는 구성 단위>>><<< Constituent unit having a protective phenolic hydroxyl group protected by (a1-2) acid decomposable group >>>
상기 산분해성기로 보호된 보호 페놀성 수산기를 갖는 구성 단위(a1-2)는 페놀성 수산기를 갖는 구성 단위가 이하에서 상세하게 설명하는 산분해성기에 의해 보호된 보호 페놀성 수산기를 갖는 구성 단위이다.The structural unit (a1-2) having a protective phenolic hydroxyl group protected by the acid-decomposable group is a structural unit having a protective phenolic hydroxyl group protected by an acid-decomposable group described in detail below.
<<<<(a1-2-1)페놀성 수산기를 갖는 구성 단위>>>><<<< Constituent unit having (a1-2-1) phenolic hydroxyl group >>>>
상기 페놀성 수산기를 갖는 구성 단위로서는 히드록시스티렌계 구성 단위나 노볼락계의 수지에 있어서의 구성 단위를 들 수 있지만, 이들 중에서는 히드록시스티렌, 또는 α-메틸히드록시스티렌에 유래하는 구성 단위가 투명성의 관점에서 바람직하다. 페놀성 수산기를 갖는 구성 단위 중에서도 하기 일반식(a1-2)으로 나타내어지는 구성 단위가 투명성, 감도의 관점에서 바람직하다.Examples of the structural unit having a phenolic hydroxyl group include a hydroxystyrene-based structural unit and a structural unit in a novolac-based resin, among which structural units derived from hydroxystyrene or α-methylhydroxystyrene. Is preferred from the viewpoint of transparency. Among the structural units having a phenolic hydroxyl group, the structural units represented by the following general formula (a1-2) are preferred from the viewpoint of transparency and sensitivity.
일반식(a1-2)General formula (a1-2)
(일반식(a1-2) 중, R220은 수소원자 또는 메틸기를 나타내고, R221은 단결합 또는 2가의 연결기를 나타내고, R222는 할로겐원자 또는 탄소수 1∼5의 직쇄 또는 분기쇄상의 알킬기를 나타내고, a는 1∼5의 정수를 나타내고, b는 0∼4의 정수를 나타내고, a+b는 5 이하이다. 또한, R222가 2 이상 존재할 경우, 이들 R222는 서로 달라도 좋고 같아도 좋다)(In the general formula (a1-2), R 220 represents a hydrogen atom or a methyl group, R 221 represents a single bond or a divalent linking group, and R 222 represents a halogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms. Represents, a represents an integer from 1 to 5, b represents an integer from 0 to 4, and a + b is 5 or less, and when R 222 is 2 or more, these R 222 may be different or the same)
상기 일반식(a1-2) 중, R220은 수소원자 또는 메틸기를 나타내고, 메틸기인 것이 바람직하다.In the general formula (a1-2), R 220 represents a hydrogen atom or a methyl group, and is preferably a methyl group.
또한, R221은 단결합 또는 2가의 연결기를 나타낸다. 단결합인 경우에는 감도를 향상시킬 수 있고, 또한 경화막의 투명성을 향상시킬 수 있으므로 바람직하다. R221의 2가의 연결기로서는 알킬렌기를 예시할 수 있고, R221이 알킬렌기인 구체예로서는 메틸렌기, 에틸렌기, 프로필렌기, 이소프로필렌기, n-부틸렌기, 이소부틸렌기, tert-부틸렌기, 펜틸렌기, 이소펜틸렌기, 네오펜틸렌기, 헥실렌기 등을 들 수 있다. 그 중에서도, R221이 단결합, 메틸렌기, 에틸렌기인 것이 바람직하다. 또한, 상기 2가의 연결기는 치환기를 갖고 있어도 좋고, 치환기로서는 할로겐원자, 수산기, 알콕시기 등을 들 수 있다.Further, R 221 represents a single bond or a divalent linking group. In the case of a single bond, it is preferable because the sensitivity can be improved and the transparency of the cured film can be improved. R may be exemplified by an alkylene group as the divalent linkage group of 221, R 221 is an alkylene group Specific examples include methylene group, ethylene group, propylene group, isopropylene group, an n- butyl group, isobutyl group, tert- butyl group, And a pentylene group, an isopentylene group, a neopentylene group, and a hexylene group. Especially, it is preferable that R 221 is a single bond, a methylene group, and an ethylene group. Moreover, the said bivalent coupling group may have a substituent, and a halogen atom, a hydroxyl group, an alkoxy group, etc. are mentioned as a substituent.
또한, a는 1∼5의 정수를 나타내지만, 본 발명의 효과의 관점이나, 제조가 용이하다는 점에서 a는 1 또는 2인 것이 바람직하고, a가 1인 것이 보다 바람직하다.In addition, a represents an integer of 1 to 5, but a is preferably 1 or 2, and more preferably a is 1 from the viewpoint of the effect of the present invention and ease of manufacture.
또한, 벤젠환에 있어서의 수산기의 결합 위치는 R221과 결합하고 있는 탄소원자를 기준(1위치)으로 했을 때, 4위치에 결합하고 있는 것이 바람직하다.In addition, the bonding position of the hydroxyl group in the benzene ring is preferably bonded to the 4 position when the carbon atom bound to R 221 is used as the reference (1 position).
R222는 할로겐원자 또는 탄소수 1∼5의 직쇄 또는 분기쇄상의 알킬기이다. 구체적으로는 불소원자, 염소원자, 브롬원자, 메틸기, 에틸기, 프로필기, 이소프로필기, n-부틸기, 이소부틸기, tert-부틸기, 펜틸기, 이소펜틸기, 네오펜틸기 등을 들 수 있다. 그 중에서도 제조가 용이하다고 하는 점에서 염소원자, 브롬원자, 메틸기 또는 에틸기인 것이 바람직하다.R 222 is a halogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms. Specifically, fluorine atom, chlorine atom, bromine atom, methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, neopentyl group, etc. You can. Especially, it is preferable that it is a chlorine atom, a bromine atom, a methyl group, or an ethyl group from the point that manufacture is easy.
또한, b는 0 또는 1∼4의 정수를 나타낸다.In addition, b represents 0 or an integer of 1-4.
<<<<구성 단위(a1-2)에 사용할 수 있는 산분해성기>>>><<<< An acid-decomposable group that can be used in structural units (a1-2) >>>>
상기 산분해성기로 보호된 보호 페놀성 수산기를 갖는 구성 단위(a1-2)에 사용할 수 있는 상기 산분해성기로서는 상기 산분해성기로 보호된 보호 카르복실기를 갖는 구성 단위(a1-1)에 사용할 수 있는 상기 산분해성기와 마찬가지로 공지의 것을 사용할 수 있고, 특별히 한정되지 않는다. 산분해성기 중에서도 아세탈로 보호된 보호 페놀성 수산기, 또는 페놀성 수산기가 케탈로 보호된 보호 페놀성 수산기를 갖는 구성 단위인 것이 레지스트의 기본 물성, 특히 감도나 패턴 형상, 감광성 수지 조성물의 보존 안정성, 콘택트 홀의 형성성의 관점에서 바람직하다. 또한, 산분해성기 중에서도 페놀성 수산기가 상기 일반식(a1-1)으로 나타내어지는 아세탈 또는 케탈로 보호된 보호 페놀성 수산기인 것이 감도의 관점에서 보다 바람직하다. 또한, 페놀성 수산기가 상기 일반식(a1-1)으로 나타내어지는 아세탈 또는 케탈로 보호된 보호 페놀성 수산기일 경우, 보호 페놀성 수산기의 전체로서는 -Ar-O-CR101R102(OR103)의 구조로 되어 있다. 또한, AR은 아릴렌기를 나타낸다.As the acid-decomposable group that can be used for the structural unit (a1-2) having a protective phenolic hydroxyl group protected by the acid-decomposable group, it can be used for the structural unit (a1-1) having a protective carboxyl group protected by the acid-decomposable group. A well-known thing can be used like an acid-decomposable group, and it is not specifically limited. Among the acid-decomposable groups, the basic physical properties of the resist, particularly sensitivity and pattern shape, storage stability of the photosensitive resin composition, are the structural units having a protective phenolic hydroxyl group protected by acetal or a protective phenolic hydroxyl group protected by ketal. It is preferable from the viewpoint of formability of the contact hole. Further, among the acid-decomposable groups, it is more preferable from the viewpoint of sensitivity that the phenolic hydroxyl group is a protective phenolic hydroxyl group protected by acetal or ketal represented by the general formula (a1-1). In addition, when the phenolic hydroxyl group is a protected phenolic hydroxyl group protected by acetal or ketal represented by the general formula (a1-1), the entire protective phenolic hydroxyl group is -Ar-O-CR 101 R 102 (OR 103 ) It is made of a structure. In addition, AR represents an arylene group.
페놀성 수산기의 아세탈에스테르 구조의 바람직한 예는 R101=R102=R103=메틸기나 R101=R102=메틸기이며 R103=벤질기의 조합을 예시할 수 있다.Preferred examples of the acetal ester structure of the phenolic hydroxyl group are R 101 = R 102 = R 103 = methyl group or R 101 = R 102 = methyl group and R 103 = benzyl group can be exemplified.
또한, 페놀성 수산기가 아세탈 또는 케탈로 보호된 보호 페놀성 수산기를 갖는 구성 단위를 형성하기 위해서 사용되는 라디칼 중합성 단량체로서는 예를 들면, 히드록시스티렌의 1-알콕시알킬 보호체, 히드록시스티렌의 테트라히드로피라닐 보호체, α-메틸-히드록시스티렌의 1-알콕시알킬 보호체, α-메틸-히드록시스티렌의 테트라히드로피라닐 보호체, 4-히드록시페닐메타크릴레이트의 1-알콕시알킬 보호체, 4-히드록시페닐메타크릴레이트의 테트라히드로피라닐 보호체, 4-히드록시벤조산(1-메타크릴로일옥시메틸)에스테르의 1-알콕시알킬 보호체, 4-히드록시벤조산(1-메타크릴로일옥시메틸)에스테르의 테트라히드로피라닐 보호체, 4-히드록시벤조산(2-메타크릴로일옥시에틸)에스테르의 1-알콕시알킬 보호체, 4-히드록시벤조산(2-메타크릴로일옥시에틸)에스테르의 테트라히드로피라닐 보호체, 4-히드록시벤조산(3-메타크릴로일옥시프로필)에스테르의 1-알콕시알킬 보호체, 4-히드록시벤조산(3-메타크릴로일옥시프로필)에스테르의 테트라히드로피라닐 보호체, 4-히드록시벤조산(3-메타크릴로일옥시-2-히드록시프로필)에스테르의 1-알콕시알킬 보호체, 4-히드록시벤조산(3-메타크릴로일옥시-2-히드록시프로필)에스테르의 테트라히드로피라닐 보호체 등을 들 수 있다.Moreover, as a radically polymerizable monomer used to form a structural unit having a protective phenolic hydroxyl group protected by acetal or ketal, the phenolic hydroxyl group is, for example, a 1-alkoxyalkyl protector of hydroxystyrene or hydroxystyrene. Tetrahydropyranyl protector, α-methyl-hydroxystyrene 1-alkoxyalkyl protector, α-methyl-hydroxystyrene tetrahydropyranyl protector, 4-hydroxyphenylmethacrylate 1-alkoxyalkyl Protector, tetrahydropyranyl protector of 4-hydroxyphenylmethacrylate, 1-alkoxyalkyl protector of 4-hydroxybenzoic acid (1-methacryloyloxymethyl) ester, 4-hydroxybenzoic acid (1 Tetrahydropyranyl protector of methacryloyloxymethyl) ester, 1-alkoxyalkyl protector of 4-hydroxybenzoic acid (2-methacryloyloxyethyl) ester, 4-hydroxybenzoic acid (2-metha Kryloyloxyethyl) Stear's tetrahydropyranyl protector, 1-alkoxyalkyl protector of 4-hydroxybenzoic acid (3-methacryloyloxypropyl) ester, 4-hydroxybenzoic acid (3-methacryloyloxypropyl) ester Tetrahydropyranyl protector, 4-hydroxybenzoic acid (3-methacryloyloxy-2-hydroxypropyl) ester 1-alkoxyalkyl protector, 4-hydroxybenzoic acid (3-methacryloyloxy And tetrahydropyranyl protectors of -2-hydroxypropyl) ester.
이들 중에서, 4-히드록시페닐메타크릴레이트의 1-알콕시알킬 보호체, 4-히드록시페닐메타크릴레이트의 테트라히드로피라닐 보호체가 투명성의 관점에서 바람직하다. Of these, 4-hydroxyphenyl methacrylate 1-alkoxyalkyl protectors and 4-hydroxyphenylmethacrylate tetrahydropyranyl protectors are preferred from the viewpoint of transparency.
페놀성 수산기의 아세탈 보호기 및 케탈 보호기의 구체예로서는 1-알콕시알킬기를 들 수 있고, 예를 들면, 1-에톡시에틸기, 1-메톡시에틸기, 1-n-부톡시에틸기, 1-이소부톡시에틸기, 1-(2-클로로에톡시)에틸기, 1-(2-에틸헥실옥시)에틸기, 1-n-프로폭시에틸기, 1-시클로헥실옥시에틸기, 1-(2-시클로헥실에톡시)에틸기, 1-벤질옥시에틸기 등을 들 수 있고, 이들은 단독 또는 2종류 이상을 조합해서 사용할 수 있다.Specific examples of the acetal protecting group and ketal protecting group of the phenolic hydroxyl group include a 1-alkoxyalkyl group, for example, 1-ethoxyethyl group, 1-methoxyethyl group, 1-n-butoxyethyl group, 1-isobutoxyethyl group , 1- (2-chloroethoxy) ethyl group, 1- (2-ethylhexyloxy) ethyl group, 1-n-propoxyethyl group, 1-cyclohexyloxyethyl group, 1- (2-cyclohexylethoxy) ethyl group And 1-benzyloxyethyl groups, and these can be used alone or in combination of two or more.
상기 산분해성기로 보호된 보호 페놀성 수산기를 갖는 구성 단위(a1-2)를 형성하기 위해서 사용되는 라디칼 중합성 단량체는 시판의 것을 사용해도 좋고, 공지의 방법으로 합성한 것을 사용할 수도 있다. 예를 들면, 페놀성 수산기를 갖는 화합물을 산촉매의 존재 하에서 비닐에테르와 반응시킴으로써 합성할 수 있다. 상기 합성은 페놀성 수산기를 갖는 모노머를 그 밖의 모노머와 미리 공중합시켜 놓고, 그 후에 산촉매의 존재 하에서 비닐에테르와 반응시켜도 좋다. A commercially available radical polymerizable monomer used to form the structural unit (a1-2) having a protective phenolic hydroxyl group protected by the acid-decomposable group may be used, or a compound synthesized by a known method may also be used. For example, a compound having a phenolic hydroxyl group can be synthesized by reacting with vinyl ether in the presence of an acid catalyst. In the above synthesis, a monomer having a phenolic hydroxyl group may be previously copolymerized with other monomers, and then reacted with vinyl ether in the presence of an acid catalyst.
상기 산분해성기로 보호된 보호 페놀성 수산기를 갖는 구성 단위(a1-2)의 바람직한 구체예로서는 하기의 구성 단위를 예시할 수 있지만, 본 발명은 이들에 한정되는 것은 아니다.Although the following structural unit can be illustrated as a preferable specific example of the structural unit (a1-2) which has the protective phenolic hydroxyl group protected by the said acid-decomposable group, This invention is not limited to these.
<<<구성 단위(a1)의 바람직한 형태>>><<< preferable form of structural unit (a1) >>>
(A)성분을 구성하는 구성 단위 중, 구성 단위(a1)의 함유율은 감도의 관점에서 중합체를 전체로 해서 1∼95몰%가 바람직하고, 10∼80몰%가 보다 바람직하고, 20∼70몰%가 더욱 바람직하고, 20∼50몰%가 특히 바람직하다. 또한, 특히 상기 구성 단위(a1)에 사용할 수 있는 상기 산분해성기가 카르복실기가 아세탈로 보호된 보호 카르복실기, 또는 카르복실기가 케탈로 보호된 보호 카르복실기를 갖는 구성 단위일 경우, 구성 단위(a1)를 포함하는 중합체를 구성하는 구성 단위 중의 구성 단위(a1)의 함유율은 20∼60몰%가 더욱 바람직하고, 20∼50몰%가 특히 바람직하다. (A) Among the structural units constituting the component, the content rate of the structural unit (a1) is preferably 1 to 95 mol%, more preferably 10 to 80 mol%, and 20 to 70, from the viewpoint of sensitivity as a whole of the polymer. Molar% is more preferable, and 20 to 50 mol% is particularly preferable. In addition, especially when the acid-decomposable group that can be used in the structural unit (a1) is a carboxyl group-protected carboxyl group protected with acetal or a carboxyl group-protected carboxyl group-protected carboxyl group, the structural unit (a1) is included. The content rate of the structural unit (a1) in the structural unit constituting the polymer is more preferably 20 to 60 mol%, and particularly preferably 20 to 50 mol%.
상기 산분해성기로 보호된 보호 카르복실기를 갖는 구성 단위(a1-1)는 상기 산분해성기로 보호된 보호 페놀성 수산기를 갖는 구성 단위(a1-2)에 비하면 현상이 빠르다고 하는 특징이 있다. 따라서, 빠르게 현상하고 싶을 경우에는 산분해성기로 보호된 보호 카르복실기를 갖는 구성 단위(a1-1)가 바람직하다. 반대로 현상을 느리게 하고 싶을 경우에는 산분해성기로 보호된 보호 페놀성 수산기를 갖는 구성 단위(a1-2)를 사용하는 것이 바람직하다.The structural unit (a1-1) having a protective carboxyl group protected by the acid-decomposable group has a feature that the phenomenon is faster than that of the structural unit (a1-2) having a protective phenolic hydroxyl group protected by the acid-decomposable group. Therefore, when it is desired to develop rapidly, the structural unit (a1-1) having a protective carboxyl group protected by an acid-decomposable group is preferable. Conversely, when it is desired to slow development, it is preferable to use a structural unit (a1-2) having a protective phenolic hydroxyl group protected by an acid-decomposable group.
[반복단위(a2)][Repeat unit (a2)]
반복단위(a2)는 통상 옥시라닐기, 옥세타닐기, 또는 -NH-CH2-OR(R은 탄소수 1∼20의 알킬기)로부터 선택되는 가교성기를 갖는 구성 단위로서 수지 중에 구성된다. 상기 가교성기를 갖는 구성 단위는 바람직하게는 환상 에테르기를 갖는 화합물유래의 구성 단위가 바람직하고, 옥시라닐기 및/또는 옥세탄기를 갖는 화합물 유래의 구성 단위가 보다 바람직하고, (3)∼(5) 중 어느 하나로 나타내어지는 라디칼 중합성 단량체로 이루어지는 반복단위가 더욱 바람직하다. 이들 화합물은 단독 또는 2종 이상을 조합해서 사용할 수 있다. 또한, 하기 일반식(2)으로 나타내어지는 반복단위여도 좋다.The repeating unit (a2) is a structural unit having a crosslinkable group selected from an oxiranyl group, an oxetanyl group, or -NH-CH 2 -OR (R is an alkyl group having 1 to 20 carbon atoms). The structural unit having the crosslinkable group is preferably a compound-derived structural unit having a cyclic ether group, more preferably a structural unit derived from a compound having an oxiranyl group and / or an oxetane group, (3) to (5) ) Is more preferably a repeating unit composed of a radically polymerizable monomer. These compounds may be used alone or in combination of two or more. Moreover, the repeating unit represented by the following general formula (2) may be sufficient.
일반식(3)∼(5) 중, X는 2가의 연결기를 나타내고, 예를 들면, -O-, -S-, 또는 -COO-, -OCH2COO- 등의 유기기를 들 수 있다. X는 바람직하게는 -COO-이다.In General Formulas (3) to (5), X represents a divalent linking group, and examples thereof include organic groups such as -O-, -S-, or -COO-, -OCH 2 COO-. X is preferably -COO-.
R7은 수소원자, 메틸기 또는 할로겐원자를 나타내고, 수소원자 또는 메틸기가 바람직하다. R 7 represents a hydrogen atom, a methyl group or a halogen atom, and a hydrogen atom or a methyl group is preferable.
R8∼R15는 각각 독립적으로 수소원자, 알킬기를 나타낸다. 바람직하게는 수소원자 또는 메틸기를 나타낸다.R 8 to R 15 each independently represent a hydrogen atom or an alkyl group. It preferably represents a hydrogen atom or a methyl group.
n은 1∼10의 정수이며, 바람직하게는 1∼3의 정수이다.n is an integer of 1-10, Preferably it is an integer of 1-3.
옥시라닐기를 함유하는 구성 단위를 형성하기 위해서 사용되는 라디칼 중합성 단량체를 구체적으로 예시하면, 아크릴산 글리시딜, 메타크릴산 글리시딜, 아크릴산 3,4-에폭시부틸, 메타크릴산 3,4-에폭시부틸, 아크릴산 4,5-에폭시펜틸, 메타크릴산 4,5-에폭시펜틸, 아크릴산 6,7-에폭시헵틸, 메타크릴산 6,7-에폭시헵틸, 3,4-에폭시시클로헥실메틸아크릴레이트, 3,4-에폭시시클로헥실메틸메타크릴레이트 등의 (메타)아크릴레이트류; o-비닐벤질글리시딜에테르, m-비닐벤질글리시딜에테르, p-비닐벤질글리시딜에테르, α-메틸-o-비닐벤질글리시딜에테르, α-메틸-m-비닐벤질글리시딜에테르, α-메틸-p-비닐벤질글리시딜에테르 등의 비닐벤질글리시딜에테르류; o-비닐페닐글리시딜에테르, m-비닐페닐글리시딜에테르, p-비닐페닐글리시딜에테르 등의 비닐페닐글리시딜에테르류를 들 수 있다. 아크릴산 글리시딜, 메타크릴산 글리시딜, p-비닐페닐글리시딜에테르, 3,4-에폭시시클로헥실메틸아크릴레이트, 3,4-에폭시시클로헥실메틸메타크릴레이트가 바람직하고, 아크릴산 글리시딜, 메타크릴산 글리시딜이 특히 바람직하다.Specific examples of the radically polymerizable monomer used to form a structural unit containing an oxiranyl group include glycidyl acrylate, glycidyl methacrylate, 3,4-epoxybutyl acrylate, and 3,4-methacrylate. Epoxybutyl, 4,5-epoxypentyl acrylate, 4,5-epoxypentyl methacrylate, 6,7-epoxyheptyl acrylate, 6,7-epoxyheptyl methacrylate, 3,4-epoxycyclohexylmethyl acrylate, (Meth) acrylates such as 3,4-epoxycyclohexyl methyl methacrylate; o-vinylbenzylglycidyl ether, m-vinylbenzylglycidyl ether, p-vinylbenzylglycidyl ether, α-methyl-o-vinylbenzylglycidyl ether, α-methyl-m-vinylbenzylglycine Vinyl benzyl glycidyl ethers such as dil ether and α-methyl-p-vinyl benzyl glycidyl ether; and vinyl phenyl glycidyl ethers such as o-vinyl phenyl glycidyl ether, m-vinyl phenyl glycidyl ether, and p-vinyl phenyl glycidyl ether. Acrylic acid glycidyl, methacrylic acid glycidyl, p-vinylphenylglycidyl ether, 3,4-epoxycyclohexylmethylacrylate, 3,4-epoxycyclohexylmethylmethacrylate are preferred, and acrylic acid glycylic acid Dill and glycidyl methacrylate are particularly preferred.
상기 가교성기를 갖는 구성 단위로서는 다른 형태에 있어서 하기 일반식(6) 또는 (7)으로 나타내어지는 라디칼 중합성 단량체로 이루어지는 구성 단위가 바람직하고, 단독 또는 2종 이상을 조합해서 사용할 수 있다. 일반식(6) 또는 (7)으로 나타내어지는 라디칼 중합성 단량체의 분자량은 바람직하게는 100∼500, 보다 바람직하게는 150∼200이다.As a structural unit which has the said crosslinkable group, the structural unit which consists of a radically polymerizable monomer represented by the following general formula (6) or (7) in another form is preferable, and can be used individually or in combination of 2 or more type. The molecular weight of the radically polymerizable monomer represented by the general formula (6) or (7) is preferably 100 to 500, more preferably 150 to 200.
일반식(6) 및 (7) 중, X는 2가의 연결기를 나타내고, 예를 들면, -O-, -S-, 또는 -COO-, -OCH2COO- 등의 유기기를 들 수 있다. X는 바람직하게는 -COO-이다. In General Formulas (6) and (7), X represents a divalent linking group, and examples thereof include organic groups such as -O-, -S-, or -COO-, -OCH 2 COO-. X is preferably -COO-.
R7은 수소원자, 메틸기 또는 할로겐원자를 나타내고, 수소원자 또는 메틸기가 바람직하다.R 7 represents a hydrogen atom, a methyl group or a halogen atom, and a hydrogen atom or a methyl group is preferable.
R8∼R15는 각각 독립적으로 수소원자, 알킬기를 나타낸다. 바람직하게는 수소원자 또는 메틸기를 나타낸다.R 8 to R 15 each independently represent a hydrogen atom or an alkyl group. It preferably represents a hydrogen atom or a methyl group.
n은 1∼10의 정수이며, 바람직하게는 1∼3의 정수이다.n is an integer of 1-10, Preferably it is an integer of 1-3.
이러한 옥세타닐기를 갖는 구성 단위를 형성하기 위해서 사용되는 라디칼 중합성 단량체의 예로서는 옥시라닐기를 함유하는 라디칼 중합성 단량체의 상기 구체예에 있어서 옥시라닐기를 옥세타닐기로 치환한 화합물이나, 예를 들면, 일본 특허 공개 2001-330953호 공보의 단락 0011∼0016에 기재된 옥세타닐기를 갖는 (메타)아크릴산 에스테르 등을 들 수 있다.Examples of the radically polymerizable monomer used to form the structural unit having such an oxetanyl group include a compound in which the oxiranyl group is substituted with an oxetanyl group in the above specific example of a radically polymerizable monomer containing an oxiranyl group, for example And (meth) acrylic acid esters having an oxetanyl group described in paragraphs 0011 to 0016 of Japanese Patent Laid-Open No. 2001-330953.
가교성기를 갖는 구성 단위를 형성하기 위해서 사용되는 라디칼 중합성 단량체는 시판의 것을 사용해도, 공지의 방법으로 합성한 것을 사용해도 좋다. 예를 들면, 오사카 유키 카가쿠 고교제의 OXE 시리즈 등을 들 수 있다.As the radically polymerizable monomer used to form a structural unit having a crosslinkable group, commercially available ones or those synthesized by a known method may be used. For example, Osaka Yuki Kagaku High School's OXE series and the like.
카르복실기와 반응해서 공유결합을 형성할 수 있는 관능기를 갖는 구성 단위의 바람직한 구체예로서는 하기의 구성 단위를 예시할 수 있다.The following structural unit can be illustrated as a preferable specific example of the structural unit which has a functional group which can react and form a covalent bond by reacting with a carboxyl group.
상기 가교성기를 갖는 구성 단위는 -NH-CH2-O-R(R은 탄소수 1∼20의 알킬기)을 갖는 구성 단위(a2-2)도 바람직하다. 구성 단위(a2-2)를 가짐으로써 완만한 가열 처리로 경화 반응을 일으킬 수 있고, 여러가지 특성이 우수한 경화막을 얻을 수 있다.The structural unit having the crosslinkable group is also preferably a structural unit (a2-2) having -NH-CH 2 -OR (R is an alkyl group having 1 to 20 carbon atoms). By having the structural unit (a2-2), a curing reaction can be caused by gentle heat treatment, and a cured film excellent in various characteristics can be obtained.
R은 탄소수 1∼20의 알킬기가 바람직하고, 탄소수 1∼9의 알킬기가 보다 바람직하고, 탄소수 1∼4의 알킬기가 더욱 바람직하다. 또한, 알킬기는 직쇄, 분기 또는 환상의 알킬기 중 어느 것이어도 좋고, 직쇄 또는 분기의 알킬기가 바람직하다.R is preferably an alkyl group having 1 to 20 carbon atoms, more preferably an alkyl group having 1 to 9 carbon atoms, and more preferably an alkyl group having 1 to 4 carbon atoms. Further, the alkyl group may be either a straight chain, branched or cyclic alkyl group, and a straight chain or branched alkyl group is preferable.
또한, 상기 알킬기는 치환기를 갖고 있어도 좋다. 알킬기가 갖고 있어도 좋은 치환기로서는 할로겐원자, 아릴기, 알콕시기를 들 수 있다.Moreover, the said alkyl group may have a substituent. Examples of the substituent that the alkyl group may have include a halogen atom, an aryl group, and an alkoxy group.
-NH-CH2-O-R을 갖는 구성 단위(a2-2)로서는 하기 일반식(2)으로 나타내어지는 기를 갖는 구성 단위가 바람직하다.As the structural unit (a2-2) having -NH-CH 2 -OR, a structural unit having a group represented by the following general formula (2) is preferable.
일반식(2)General formula (2)
(상기 식 중, R1은 수소원자 또는 메틸기를 나타내고, R2는 탄소수 1∼20의 알킬기를 나타낸다)(In the formula, R 1 represents a hydrogen atom or a methyl group, and R 2 represents an alkyl group having 1 to 20 carbon atoms)
R2는 탄소수 1∼9의 알킬기가 바람직하고, 탄소수 1∼4의 알킬기가 더욱 바람직하다. 또한, 알킬기는 직쇄, 분기 또는 환상의 알킬기 중 어느 것이어도 좋지만, 바람직하게는 직쇄 또는 분기의 알킬기이다.R 2 is preferably an alkyl group having 1 to 9 carbon atoms, and more preferably an alkyl group having 1 to 4 carbon atoms. Further, the alkyl group may be either a straight chain, branched or cyclic alkyl group, but is preferably a straight chain or branched alkyl group.
R2의 구체예로서는 메틸기, 에틸기, n-부틸기, i-부틸기, 시클로헥실기, 및 n-헥실기를 들 수 있다. 그 중에서도 i-부틸기, n-부틸기, 메틸기가 바람직하다.Specific examples of R 2 include methyl group, ethyl group, n-butyl group, i-butyl group, cyclohexyl group, and n-hexyl group. Especially, i-butyl group, n-butyl group, and methyl group are preferable.
(A)성분을 구성하는 구성 단위 중, 구성 단위(a2)의 함유율은 1∼95몰%가 바람직하고, 5∼70몰%가 보다 바람직하고, 10∼50몰%가 더욱 바람직하고, 20∼50몰%가 보다 더욱 바람직하고, 30∼50몰%가 특히 바람직하다. 상기 수치의 범위내이면 감광성 수지 조성물로부터 얻어지는 경화막의 여러가지 특성이 양호하게 된다.(A) Among the structural units constituting the component, the content rate of the structural unit (a2) is preferably 1 to 95 mol%, more preferably 5 to 70 mol%, still more preferably 10 to 50 mol%, and 20 to 50 mol% is more preferable, and 30-50 mol% is especially preferable. If it is within the range of the above values, various properties of the cured film obtained from the photosensitive resin composition will be good.
[반복단위(a3)][Repeat Unit (a3)]
본 발명의 감광성 조성물은 측쇄 말단에 카르복실기를 갖고, 폴리머 주쇄와 측쇄 말단의 카르복실기를 연결하는 기를 구성하는 2가의 연결기의 원자수가 4 이상인 모노머 단위(a3)를 함유하고, 2가의 연결기는 -CR1 2-(R1은 수소원자 또는 메틸기를 나타낸다), -O-, -O-SO2-, -O-C(O)-, -C(O)-O-, -S-, -C(O)-, 치환기를 갖고 있어도 좋은 아미노기, 치환기를 갖고 있어도 좋은 페닐렌기, 또는 하기 (iv)의 구조로부터 선택되어 임의로 조합되는 기이다.The photosensitive composition of the present invention contains a monomeric unit (a3) having a carboxyl group at the side chain terminal and having at least 4 atoms in a divalent linking group constituting a group connecting a polymer main chain and a side chain terminal carboxyl group, and the bivalent linking group is -CR 1 2- (R 1 represents a hydrogen atom or a methyl group), -O-, -O-SO 2- , -OC (O)-, -C (O) -O-, -S-, -C (O) -, An amino group which may have a substituent, a phenylene group which may have a substituent, or a group selected from structures of (iv) below and optionally combined.
L은 폴리머 주쇄와 카르복실기를 연결하는 원자수가 4 이상인 2가의 연결기이며, 원자수가 6 이상 20 이하인 것이 바람직하고, 8 이상 12 이하인 것이 보다 바람직하다.L is a divalent linking group having 4 or more atoms connecting the polymer main chain and a carboxyl group, preferably 6 to 20 atoms, and more preferably 8 to 12 atoms.
원자수가 4 이상인 2가의 연결기(L)로서는 -CR1 2-(R1은 수소원자 또는 메틸기를 나타낸다), -O-, -O-SO2-, -O-C(O)-, -C(O)-O-, -S-, -C(O)-, 치환기를 갖고 있어도 좋은 아미노기, 치환기를 갖고 있어도 좋은 페닐렌기 또는 하기 (iv)의 구조로부터 선택되어 임의로 조합되는 기이다.As a divalent linking group (L) having 4 or more atoms, -CR 1 2- (R 1 represents a hydrogen atom or a methyl group), -O-, -O-SO 2- , -OC (O)-, -C (O ) -O-, -S-, -C (O)-, an amino group which may have a substituent, a phenylene group which may have a substituent, or a group selected from the structures of (iv) below and optionally combined.
일반식(iv) 중, z는 0∼5까지의 정수를 나타낸다.In general formula (iv), z represents the integer of 0-5.
Z는 2∼3이 바람직하고, 3이 특히 바람직하다.Z is preferably 2-3, and 3 is particularly preferable.
아미노기로서는 탄소수 0∼50의 아미노기가 바람직하고, 예를 들면, -NH2, N-알킬아미노기, N-아릴아미노기, N-아실아미노기, N-술포닐아미노기, N,N-디알킬아미노기, N,N-디아릴아미노기, N-알킬-N-아릴아미노기, N,N-디술포닐아미노기 등을 들 수 있다. 보다 구체적으로는 N-메틸아미노기, N-에틸아미노기, N-프로필아미노기, N-이소프로필아미노기, N-부틸아미노기, N-tert-부틸아미노기, N-헥실아미노기, N-시클로헥실아미노기, N-옥틸아미노기, N-2-에틸헥실아미노기, N-데실아미노기, N-옥타데실아미노기, N-벤질아미노기, N-페닐아미노기, N-2-메틸페닐아미노기, N-2-클로로페닐아미노기, N-2-메톡시페닐아미노기, N-2-이소프로폭시페닐아미노기, N-2-(2-에틸헥실)페닐아미노기, N-3-클로로페닐아미노기, N-3-니트로페닐아미노기, N-3-시아노페닐아미노기, N-3-트리플루오로메틸페닐아미노기, N-4-메톡시페닐아미노기, N-4-시아노페닐아미노기, N-4-트리플루오로메틸페닐아미노기, N-4-메틸술파닐페닐아미노기, N-4-페닐술파닐페닐아미노기, N-4-디메틸아미노페닐아미노기, N-메틸-N-페닐아미노기, N,N-디메틸아미노기, N,N-디에틸아미노기, N,N-디부틸아미노기, N,N-디페닐아미노기, N,N-디아세틸아미노기, N,N-디벤조일아미노기, N,N-(디부틸카르보닐)아미노기, N,N-(디메틸술포닐)아미노기, N,N-(디에틸술포닐)아미노기, N,N-(디부틸술포닐)아미노기, N,N-(디페닐술포닐)아미노기, 모르폴리노기, 3,5-디메틸모르폴리노기, 카르바졸기 등을 들 수 있다. 이들 중에서도 -NH2, N,N-디페닐아미노기, 카르바졸기가 바람직하다.As the amino group, an amino group having 0 to 50 carbon atoms is preferable, for example, -NH 2 , N-alkylamino group, N-arylamino group, N-acylamino group, N-sulfonylamino group, N, N-dialkylamino group, N And N-diarylamino groups, N-alkyl-N-arylamino groups, and N, N-disulfonylamino groups. More specifically, N-methylamino group, N-ethylamino group, N-propylamino group, N-isopropylamino group, N-butylamino group, N-tert-butylamino group, N-hexylamino group, N-cyclohexylamino group, N- Octylamino group, N-2-ethylhexylamino group, N-decylamino group, N-octadecylamino group, N-benzylamino group, N-phenylamino group, N-2-methylphenylamino group, N-2-chlorophenylamino group, N-2 -Methoxyphenylamino group, N-2-isopropoxyphenylamino group, N-2- (2-ethylhexyl) phenylamino group, N-3-chlorophenylamino group, N-3-nitrophenylamino group, N-3-sia Nophenylamino group, N-3-trifluoromethylphenylamino group, N-4-methoxyphenylamino group, N-4-cyanophenylamino group, N-4-trifluoromethylphenylamino group, N-4-methylsulfanylphenyl Amino group, N-4-phenylsulfanylphenylamino group, N-4-dimethylaminophenylamino group, N-methyl-N-phenylamino group, N, N-dimethylamino group, N, N-di Tylamino group, N, N-dibutylamino group, N, N-diphenylamino group, N, N-diacetylamino group, N, N-dibenzoylamino group, N, N- (dibutylcarbonyl) amino group, N, N -(Dimethylsulfonyl) amino group, N, N- (diethylsulfonyl) amino group, N, N- (dibutylsulfonyl) amino group, N, N- (diphenylsulfonyl) amino group, morpholino group, 3, 5-dimethylmorpholino group, carbazole group, etc. are mentioned. Among these, -NH 2 , N, N-diphenylamino group and carbazole group are preferable.
페닐렌기로서는 예를 들면, o-페닐렌기, m-페닐렌기, 및 p-페닐렌기를 들 수 있다. 이들 중에서도 o-페닐렌기, p-페닐렌기가 바람직하다.As a phenylene group, an o-phenylene group, m-phenylene group, and p-phenylene group are mentioned, for example. Among these, o-phenylene group and p-phenylene group are preferable.
아미노기 및 페닐렌기가 갖고 있어도 좋은 치환기로서는 할로겐원자, 아릴기, 알콕시기를 들 수 있다.A halogen atom, an aryl group, and an alkoxy group are mentioned as a substituent which the amino group and the phenylene group may have.
또한, 본 명세서에 있어서 2가의 연결기의 원자수란 폴리머 주쇄와 카르복실기를 연결하는 주쇄를 구성하는 원자수가 작은 쪽의 원자수를 말한다. 예를 들면, 하기 예시 화합물(a3-1)은 원자수가 8이며, (a3-2)는 원자수가 8이며 (폴리머 주쇄와 카르복실기를 연결하는 주쇄를 구성하는 원자수는 8의 경우와 12의 경우가 고려되지만, 폴리머 주쇄와 카르복실기를 연결하는 주쇄를 구성하는 원자수가 작은 쪽의 원자수를 원자수로 정의하므로, 원자수는 8이다), (a3-20)은 원자수가 8이다(하기 식 중의 숫자는 원자수를 의미한다).In addition, in this specification, the number of atoms of a divalent linking group means the number of atoms in which the number of atoms constituting the main chain connecting the polymer main chain and the carboxyl group is small. For example, the following exemplary compound (a3-1) has 8 atoms, (a3-2) has 8 atoms (the number of atoms constituting the main chain connecting the polymer main chain and the carboxyl group is 8 and 12) Is considered, but since the number of atoms constituting the main chain connecting the polymer main chain and the carboxyl group is defined as the number of atoms, the number of atoms is 8), and (a3-20) is 8 atoms (in the formula below) Numbers refer to the number of atoms).
상기 (a3)성분으로서는 하기 일반식(i)∼(iii)으로 나타내어지는 반복단위를 1종 이상 포함하는 것이 바람직하다.As the component (a3), it is preferable to include at least one repeating unit represented by the following general formulas (i) to (iii).
(식(i)∼(iii) 중, R1은 수소원자 또는 메틸기를 나타내고, L은 원자수가 4 이상인 2가의 연결기를 나타낸다. 일반식(iii) 중, R2는 할로겐원자, 수산기 또는 탄소수 1∼3의 알킬기를 나타내고, n은 0∼4의 정수를 나타낸다)(In formulas (i) to (iii), R 1 represents a hydrogen atom or a methyl group, and L represents a divalent linking group having 4 or more atoms. In general formula (iii), R 2 represents a halogen atom, a hydroxyl group, or 1 carbon atom.) Represents an alkyl group of ∼3, and n represents an integer of 0 to 4)
L의 예로서는 이하에 나타내는 연결기의 군에서 선택되는 것이 바람직하다. 이하의 연결기 중,「*」은 폴리머 주쇄 및 카르복실기의 연결 부위를 나타낸다.It is preferable that it is selected from the group of the linking group shown below as an example of L. Among the following linking groups, "*" represents the linking site of the polymer main chain and the carboxyl group.
일반식(iii) 중, R2는 할로겐원자, 수산기 또는 탄소수 1∼3의 알킬기이며, 염소원자, 브롬원자, 수산기 또는 메틸기가 바람직하다.In General Formula (iii), R 2 is a halogen atom, a hydroxyl group, or an alkyl group having 1 to 3 carbon atoms, and a chlorine atom, a bromine atom, a hydroxyl group, or a methyl group is preferable.
n은 0∼4의 정수이며, 0이 바람직하다.n is an integer of 0-4, and 0 is preferable.
상기 일반식(i)∼(iii)으로 나타내어지는 반복단위는 하기 일반식(i')∼(iii')으로 나타내어지는 반복단위인 것이 바람직하다.It is preferable that the repeating units represented by the general formulas (i) to (iii) are repeating units represented by the following general formulas (i ') to (iii').
(식(i')∼(iii') 중, R1은 식(i)∼(iii)의 R1과 동의이며, L1은 탄소수가 1∼4인 알킬렌기를 나타낸다)(Formula (i ') ~ (iii' ) of, R 1 is formula (i) and R ~ 1 and consent of (iii), L 1 represents an alkylene group of a carbon number of 1 to 4.)
L1은 탄소수가 1∼4인 알킬렌기를 나타내고, 탄소수가 2∼3인 알킬렌기가 바람직하다.L 1 represents an alkylene group having 1 to 4 carbon atoms, and an alkylene group having 2 to 3 carbon atoms is preferable.
반복단위(a3)의 구체예로서는 하기 구조를 들 수 있지만, 본 발명은 하기 구조에 한정되는 것은 아니다.Although the following structure is mentioned as a specific example of a repeating unit (a3), This invention is not limited to the following structure.
상기 구체예 중에서도, (a3-1)∼(a3-15)가 바람직하고, (a3-1)∼(a3-3), (a3-5), (a3-7), 및 (a3-9)가 보다 바람직하고, (a3-2)가 더욱 바람직하다.Among the specific examples, (a3-1) to (a3-15) are preferred, and (a3-1) to (a3-3), (a3-5), (a3-7), and (a3-9) Is more preferable, and (a3-2) is more preferable.
(A)성분을 구성하는 구성 단위 중, 반복단위(a3)의 함유율은 전체 수지 성분의 구조단위의 0.1∼50몰%가 바람직하고, 0.1∼45몰%가 보다 바람직하고, 5.0∼35몰%가 더욱 바람직하다. 함유량을 0.1몰% 이상으로 함으로써 고감도, 고잔막률이라는 효과가 얻어지고, 45몰% 이하이면 현상성 향상의 점에서 바람직하다.(A) Among the structural units constituting the component, the content rate of the repeating unit (a3) is preferably 0.1 to 50 mol%, more preferably 0.1 to 45 mol%, and 5.0 to 35 mol%, of the structural units of all resin components. Is more preferred. When the content is 0.1 mol% or more, an effect of high sensitivity and high residual film ratio is obtained, and if it is 45 mol% or less, it is preferable from the viewpoint of improving developability.
반복단위(a3)를 갖는 폴리머의 중량 평균 분자량(Mw)은 3000∼300000의 범위인 것이 바람직하고, 보다 바람직하게는 4000∼100000이며, 더욱 바람직하게는 8000∼50000이다. 3000 이상으로 함으로써 잔막률 향상 효과가 얻어지고, 300000 이하로 함으로써 고감도라는 효과가 얻어진다. 여기에서, 중량 평균 분자량은 겔투과 크로마토그래피의 폴리스티렌 환산값으로서 정의된다.The weight average molecular weight (Mw) of the polymer having a repeating unit (a3) is preferably in the range of 3000 to 300000, more preferably 4000 to 100,000, and still more preferably 8000 to 50000. The effect of improving the residual film rate is obtained by setting it to 3000 or more, and the effect of high sensitivity is obtained by setting it to 300000 or less. Here, the weight average molecular weight is defined as the polystyrene conversion value of gel permeation chromatography.
[반복단위(a4)][Repeat unit (a4)]
상기 (A)성분은 상기 반복단위(a1)∼(a3) 이외에 다른 모노머로부터 유도되는 반복단위(a4)로서 갖는 폴리머가 포함되어도 좋다. 또한, 반복단위(a4)를 공중합시켜도 좋다. 다른 모노머로서는 수소화 히드록시스티렌; 할로겐, 알콕시 또는 알킬 치환 히드록시스티렌; 스티렌; 할로겐, 알콕시, 아실옥시 또는 알킬 치환 스티렌; 무수 말레산; 아크릴산 유도체; 메타크릴산 유도체; N-치환 말레이미드 등을 들 수 있지만, 이들에 한정되는 것은 아니다.The said (A) component may contain the polymer which has as a repeating unit (a4) derived from another monomer other than the said repeating units (a1)-(a3). Moreover, you may copolymerize the repeating unit (a4). Other monomers include hydrogenated hydroxystyrene; Halogen, alkoxy or alkyl substituted hydroxystyrene; Styrene; Halogen, alkoxy, acyloxy or alkyl substituted styrene; Maleic anhydride; Acrylic acid derivatives; Methacrylic acid derivatives; And N-substituted maleimide, and the like, but are not limited to these.
(A)성분을 구성하는 구성 단위 중, 구성 단위(a4)의 함유율은 0.01∼50몰%가 바람직하고, 0.01∼33몰%가 보다 바람직하고, 5∼23몰%가 더욱 바람직하다.(A) Among the structural units constituting the component, the content of the structural unit (a4) is preferably 0.01 to 50 mol%, more preferably 0.01 to 33 mol%, and even more preferably 5 to 23 mol%.
본 발명에서는 (A)성분을 구성하는 반복단위 중 상기 일반식(i)∼(iii)으로 나타내어지는 반복단위 중의 「L」의 원자수가 3 이하인 반복단위가 3몰% 이하인 것이 바람직하고, 실질적으로 포함하지 않는 것이 보다 바람직하다. 실질적으로 포함하지 않는다란 예를 들면, 본 발명의 효과에 영향을 주지 않는 것을 말한다.In the present invention, among the repeating units constituting the component (A), the repeating units having 3 or less atoms of "L" in the repeating units represented by the general formulas (i) to (iii) are preferably 3 mol% or less, and substantially It is more preferable not to include it. By not including substantially, it means that it does not affect the effect of this invention, for example.
[(A)성분의 분자량][Molecular weight of component (A)]
상기 (A)성분의 중량 평균 분자량(Mw)은 3000∼300000의 범위인 것이 바람직하고, 보다 바람직하게는 4000∼100000이며, 더욱 바람직하게는 8000∼50000이다. 3000 이상으로 함으로써 잔막률 향상 효과가 얻어지고, 300000 이하로 함으로써 고감도라는 효과가 얻어진다. 여기에서, 중량 평균 분자량은 겔투과 크로마토그래피의 폴리스티렌 환산값으로서 정의된다.The weight average molecular weight (Mw) of the component (A) is preferably in the range of 3000 to 300,000, more preferably 4000 to 100,000, and even more preferably 8000 to 50000. The effect of improving the residual film rate is obtained by setting it to 3000 or more, and the effect of high sensitivity is obtained by setting it to 300000 or less. Here, the weight average molecular weight is defined as the polystyrene conversion value of gel permeation chromatography.
<<(A)의 배합량>><< (A) compounding amount >>
본 발명의 감광성 수지 조성물은 (A)성분을 중합체 성분의 30중량% 이상 포함하는 것이 바람직하고, 40중량% 이상 포함하는 것이 보다 바람직하고, 50중량% 이상 포함하는 것이 더욱 바람직하다. 이러한 범위로 함으로써 구성 단위(a2)가 조성물 중에 남김없이 존재하는 것이 되고, 본 발명의 효과가 보다 효과적으로 발휘된다. 상한치로서는 특별히 정해진 것은 아니고, 100중량% 이어도 좋다.The photosensitive resin composition of the present invention preferably contains at least 30% by weight of the component (A), more preferably at least 40% by weight, and even more preferably at least 50% by weight. By setting it as such a range, the structural unit (a2) will remain in the composition, and the effect of this invention will be exhibited more effectively. The upper limit is not particularly limited, and may be 100% by weight.
<<(A)성분의 제조 방법>><< (A) Method of manufacturing >>
또한, (A)성분의 합성법에 대해서도 여러가지 방법이 알려져 있지만, 일례를 들면 적어도 상기 (a1) 및 상기 (a2)로 나타내어지는 구성 단위를 형성하기 위해서 사용되는 라디칼 중합성 단량체를 포함하는 라디칼 중합성 단량체 혼합물을 유기 용제 내에서 라디칼 중합 개시제를 사용해서 중합함으로써 합성할 수 있다. 또한, 소위 고분자 반응으로 합성할 수도 있다. 또한, (A)성분은 말단에 카르복시기를 갖는 것도 바람직하다.In addition, although various methods are known for the method for synthesizing the component (A), for example, radical polymerization properties including, for example, radically polymerizable monomers used to form the structural units represented by (a1) and (a2) above The monomer mixture can be synthesized by polymerization in an organic solvent using a radical polymerization initiator. It can also be synthesized by a so-called polymer reaction. Moreover, it is also preferable that (A) component has a carboxyl group at the terminal.
〔말단에 카르복실기를 갖는 수지의 합성 방법〕[Synthesis method of resin having a carboxyl group at the terminal]
말단에 카르복실기를 갖는 수지는 대응하는 단량체를 라디칼 중합, 음이온 중합, 그룹 트랜스퍼 중합(GTP) 등에 의해 공중합함으로써 제조할 수 있다. 본 발명의 말단에 카르복실기를 갖는 수지의 제조 방법은 특별히 한정되지 않지만, 예를 들면 일본 특허 공개 2005-122035호 공보 0099단락∼0117 단락 기재의 (a)∼(h)의 방법을 들 수 있다. 이 중에서도 a와 b의 방법이 바람직하다.The resin having a carboxyl group at the terminal can be produced by copolymerizing a corresponding monomer by radical polymerization, anionic polymerization, group transfer polymerization (GTP) or the like. Although the manufacturing method of the resin which has a carboxyl group at the terminal of this invention is not specifically limited, For example, the method of (a)-(h) described in paragraph of Japanese Patent Publication 2005-122035-0099 paragraph -0117 paragraph is mentioned. Among these, the methods of a and b are preferred.
(a)카르복실기를 갖는 중합 개시제를 사용하는 방법으로서는 중합시에 개시제로서 카르복실기를 갖는 중합 개시제를 사용한다.(a) As a method of using a polymerization initiator having a carboxyl group, a polymerization initiator having a carboxyl group is used as an initiator during polymerization.
카르복실기를 갖는 중합 개시제로서는 광범위하게 사용되지만, 예로서, VA-057(Wako Pure Chemical Industries, Ltd.제), V-501(Wako Pure Chemical Industries, Ltd.제)을 들 수 있다.Although widely used as a polymerization initiator having a carboxyl group, VA-057 (manufactured by Wako Pure Chemical Industries, Ltd.) and V-501 (manufactured by Wako Pure Chemical Industries, Ltd.) are exemplified.
이러한 중합 개시제는 중합성 모노머 100몰에 대해서 0.05∼10몰%인 것이 바람직하고, 0.1∼5몰%인 것이 더욱 바람직하다. It is preferable that this polymerization initiator is 0.05-10 mol% with respect to 100 mol of polymerizable monomers, and it is more preferable that it is 0.1-5 mol%.
공중합 반응의 반응 온도는 50∼100℃인 것이 바람직하고, 60∼100℃인 것이 보다 바람직하다.The reaction temperature of the copolymerization reaction is preferably 50 to 100 ° C, more preferably 60 to 100 ° C.
(H) 중합시에 카르복실기를 갖는 연쇄 이동제를 사용하는 방법에서는 카르복실기를 적어도 1개 갖는 티올 화합물을 중합시에 병용한다. 카르복실기를 적어도 1개 갖는 티올 화합물로서는 이하의 예가 있다.(H) In the method of using a chain transfer agent having a carboxyl group during polymerization, a thiol compound having at least one carboxyl group is used together during polymerization. The following examples are given as thiol compounds having at least one carboxyl group.
연쇄 이동제는 개시제량에 대해서 1/100∼2/3몰의 비율로 배합되는 것이 바람직하고, 1/20∼1/3몰의 비율로 배합되는 것이 보다 바람직하다.The chain transfer agent is preferably blended in a ratio of 1/100 to 2/3 mol with respect to the amount of initiator, and more preferably blended in a ratio of 1/20 to 1/3 mol.
개시제량과 연쇄 이동제의 총합에 의해 분자량이 조정되지만, 전체 모노머 총 몰에 대해서 0.05∼10몰%인 것이 바람직하고, 0.1∼5몰%인 것이 더욱 바람직하다. 공중합 반응의 반응 온도는 50∼100℃인 것이 바람직하고, 60∼95℃인 것이 보다 바람직하다.Although the molecular weight is adjusted by the sum of the initiator amount and the chain transfer agent, it is preferably 0.05 to 10 mol%, more preferably 0.1 to 5 mol%, based on the total moles of all monomers. The reaction temperature of the copolymerization reaction is preferably 50 to 100 ° C, more preferably 60 to 95 ° C.
<(B) 광산발생제><(B) Photoacid generator>
본 발명의 감광성 수지 조성물은 광산발생제(B)를 함유한다. 본 발명에서 사용되는 광산발생제로서는 파장 300nm 이상, 바람직하게는 파장 300∼450nm의 활성 광선에 감응하여 산을 발생하는 화합물이 바람직하지만, 그 화학구조는 특별히 제한되는 것은 아니다. 또한, 파장 300nm 이상의 활성 광선에 직접 감응하지 않는 광산발생제에 대해서도 증감제와 병용함으로써 파장 300nm 이상의 활성 광선에 감응하여 산을 발생하는 화합물이면, 증감제와 조합해서 바람직하게 사용할 수 있다. 본 발명에서 사용되는 광산발생제로서는 pKa가 4 이하인 산을 발생하는 광산발생제가 바람직하고, pKa가 3 이하인 산을 발생하는 광산발생제가 보다 바람직하다. The photosensitive resin composition of the present invention contains a photoacid generator (B). The photoacid generator used in the present invention is preferably a compound that generates an acid in response to actinic rays having a wavelength of 300 nm or more, preferably a wavelength of 300 to 450 nm, but its chemical structure is not particularly limited. In addition, for a photoacid generator that does not directly respond to actinic rays having a wavelength of 300 nm or more, any compound that generates an acid in response to actinic rays having a wavelength of 300 nm or more by using in combination with a sensitizer can be preferably used in combination with a sensitizer. The photoacid generator used in the present invention is preferably a photoacid generator that generates an acid having a pKa of 4 or less, and more preferably a photoacid generator that generates an acid having a pKa of 3 or less.
광산발생제의 예로서 트리클로로메틸-s-트리아진류, 술포늄염이나 요오드늄염, 제4급 암모늄염류, 디아조메탄 화합물, 이미드술포네이트 화합물, 및 옥심술포네이트 화합물 등을 들 수 있다. 이들 중에서도 절연성의 관점에서 옥심술포네이트 화합물을 사용하는 것이 바람직하다. 이들 광산발생제는 1종 단독 또는 2종류 이상을 조합해서 사용할 수 있다. Examples of the photoacid generator include trichloromethyl-s-triazines, sulfonium salts or iodonium salts, quaternary ammonium salts, diazomethane compounds, imide sulfonate compounds, and oxime sulfonate compounds. Among these, it is preferable to use an oxime sulfonate compound from an insulating viewpoint. These photoacid generators may be used alone or in combination of two or more.
이들의 구체예로서는 이하를 예시할 수 있다. The following can be illustrated as a specific example of these.
트리클로로메틸-s-트리아진류로서 2-(3-클로로페닐)-비스(4,6-트리클로로메틸)-s-트리아진, 2-(4-메톡시페닐)-비스(4,6-트리클로로메틸)-s-트리아진, 2-(4-메틸티오페닐)-비스(4,6-트리클로로메틸)-s-트리아진, 2-(4-메톡시-β-스티릴)-비스(4,6-트리클로로메틸)-s-트리아진, 2-피페로닐-비스(4,6-트리클로로메틸)-s-트리아진, 2-[2-(푸란-2-일)에테닐]-비스(4,6-트리클로로메틸)-s-트리아진, 2-[2-(5-메틸푸란-2-일)에테닐]-비스(4,6-트리클로로메틸)-s-트리아진, 2-[2-(4-디에틸아미노-2-메틸페닐)에테닐]-비스(4,6-트리클로로메틸)-s-트리아진 또는 2-(4-메톡시나프틸)-비스(4,6-트리클로로메틸)-s-트리아진 등;As trichloromethyl-s-triazine, 2- (3-chlorophenyl) -bis (4,6-trichloromethyl) -s-triazine, 2- (4-methoxyphenyl) -bis (4,6- Trichloromethyl) -s-triazine, 2- (4-methylthiophenyl) -bis (4,6-trichloromethyl) -s-triazine, 2- (4-methoxy-β-styryl)- Bis (4,6-trichloromethyl) -s-triazine, 2-piperonyl-bis (4,6-trichloromethyl) -s-triazine, 2- [2- (furan-2-yl) Ethenyl] -bis (4,6-trichloromethyl) -s-triazine, 2- [2- (5-methylfuran-2-yl) ethenyl] -bis (4,6-trichloromethyl)- s-triazine, 2- [2- (4-diethylamino-2-methylphenyl) ethenyl] -bis (4,6-trichloromethyl) -s-triazine or 2- (4-methoxynaphthyl ) -Bis (4,6-trichloromethyl) -s-triazine, etc .;
디아릴요오드늄염류로서 디페닐요오드늄트리플루오로아세테이트, 디페닐요오드늄트리플루오로메탄술포네이트, 4-메톡시페닐페닐요오드늄트리플루오로메탄술포네이트, 4-메톡시페닐페닐요오드늄트리플루오로아세테이트, 페닐,4-(2'-히드록시-1'-테트라데카옥시)페닐요오드늄트리플루오로메탄술포네이트, 4-(2'-히드록시-1'-테트라데카옥시)페닐요오드늄헥사플루오로안티모네이트, 페닐,4-(2'-히드록시-1'-테트라데카옥시)페닐요오드늄-p-톨루엔술포네이트 등;As a diaryl iodonium salt, diphenyl iodonium trifluoroacetate, diphenyl iodonium trifluoromethanesulfonate, 4-methoxyphenylphenyl iodonium trifluoromethanesulfonate, 4-methoxyphenylphenyl iodonium tree Fluoroacetate, phenyl, 4- (2'-hydroxy-1'-tetradecaoxy) phenyl iodonium trifluoromethanesulfonate, 4- (2'-hydroxy-1'-tetradecaoxy) phenyliodine Niumhexafluoroantimonate, phenyl, 4- (2'-hydroxy-1'-tetradecaoxy) phenyl iodonium-p-toluenesulfonate, etc .;
트리아릴술포늄염류로서 트리페닐술포늄트리플루오로메탄술포네이트, 트리페닐술포늄트리플루오로아세테이트, 4-메톡시페닐디페닐술포늄트리플루오로메탄술포네이트, 4-메톡시페닐디페닐술포늄트리플루오로아세테이트, 4-페닐티오페닐디페닐술포늄트리플루오로메탄술포네이트 또는 4-페닐티오페닐디페닐술포늄트리플루오로아세테이트 등;As triarylsulfonium salts, triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium trifluoroacetate, 4-methoxyphenyldiphenylsulfonium trifluoromethanesulfonate, 4-methoxyphenyldiphenylsulfate Phonium trifluoroacetate, 4-phenylthiophenyldiphenylsulfonium trifluoromethanesulfonate, or 4-phenylthiophenyldiphenylsulfonium trifluoroacetate;
제4급 암모늄염류로서 테트라메틸암모늄부틸트리스(2,6-디플루오로페닐)보레이트, 테트라메틸암모늄헥실트리스(p-클로로페닐)보레이트, 테트라메틸암모늄헥실트리스(3-트리플루오로메틸페닐)보레이트, 벤질디메틸페닐암모늄부틸트리스(2,6-디 플루오로페닐)보레이트, 벤질디메틸페닐암모늄헥실트리스(p-클로로페닐)보레이트, 벤질디메틸페닐암모늄헥실트리스(3-트리플루오로메틸페닐)보레이트 등;As a quaternary ammonium salt, tetramethylammonium butyltris (2,6-difluorophenyl) borate, tetramethylammoniumhexyltris (p-chlorophenyl) borate, tetramethylammoniumhexyltris (3-trifluoromethylphenyl) borate , Benzyldimethylphenylammoniumbutyltris (2,6-difluorophenyl) borate, benzyldimethylphenylammoniumhexyltris (p-chlorophenyl) borate, benzyldimethylphenylammoniumhexyltris (3-trifluoromethylphenyl) borate, etc .;
디아조메탄 유도체로서 비스(시클로헥실술포닐)디아조메탄, 비스(t-부틸술포닐)디아조메탄, 비스(p-톨루엔술포닐)디아조메탄 등;As a diazomethane derivative, bis (cyclohexylsulfonyl) diazomethane, bis (t-butylsulfonyl) diazomethane, bis (p-toluenesulfonyl) diazomethane, etc .;
이미드술포네이트 유도체로서 트리플루오로메틸술포닐옥시비시클로[2.2.1]헵토-5-엔디카르복시이미드, 숙신이미드트리플루오로메틸술포네이트, 프탈이미드트리플루오로메틸술포네이트, N-히드록시나프탈이미드메탄술포네이트, N-히드록시-5-노르보르넨-2,3-디카르복시이미드프로판술포네이트 등;As an imide sulfonate derivative, trifluoromethylsulfonyloxybicyclo [2.2.1] hepto-5-endicarboxyimide, succinimide trifluoromethylsulfonate, phthalimide trifluoromethylsulfonate, N- Hydroxynaphthalimidemethanesulfonate, N-hydroxy-5-norbornene-2,3-dicarboxyimidepropanesulfonate, etc .;
옥심술포네이트 화합물로서 이하에 나타내는 화합물.The compound shown below as an oxime sulfonate compound.
옥심술포네이트 화합물, 즉, 옥심술포네이트 잔기를 갖는 화합물로서는 식(b1)으로 나타내어지는 옥심술포네이트 잔기를 함유하는 화합물을 바람직하게 예시할 수 있다.As the oxime sulfonate compound, that is, a compound having an oxime sulfonate residue, a compound containing an oxime sulfonate residue represented by the formula (b1) can be preferably exemplified.
(식(b1) 중, R5는 알킬기 또는 아릴기를 나타낸다)(In formula (b1), R 5 represents an alkyl group or an aryl group.)
어느 기나 치환되어도 좋고, R5에 있어서의 알킬기는 직쇄상이어도 분기상이어도 환상이어도 좋다. 허용되는 치환기는 이하에 설명한다.Any group may be substituted, and the alkyl group for R 5 may be linear or branched or cyclic. Acceptable substituents are described below.
R5의 알킬기로서는 탄소수 1∼10의 직쇄상 또는 분기상 알킬기가 바람직하다. R5의 알킬기는 탄소수 6∼11의 아릴기, 탄소수 1∼10의 알콕시기, 또는 시클로알킬기(7,7-디메틸-2-옥소노르보르닐기 등의 유교식 지환기를 포함하는 바람직하게는 비시클로알킬기 등)로 치환되어도 좋다.The alkyl group of R 5 is preferably a linear or branched alkyl group having 1 to 10 carbon atoms. The alkyl group of R 5 preferably contains bicyclic cycloaliphatic groups such as an aryl group having 6 to 11 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, or a cycloalkyl group (7,7-dimethyl-2-oxonorbornyl group). Alkyl group, etc.).
R5의 아릴기로서는 탄소수 6∼11의 아릴기가 바람직하고, 페닐기 또는 나프틸기가 보다 바람직하다. R5의 아릴기는 저급 알킬기, 알콕시기 또는 할로겐원자로 치환되어도 좋다.The aryl group of R 5 is preferably an aryl group having 6 to 11 carbon atoms, and more preferably a phenyl group or a naphthyl group. The aryl group of R 5 may be substituted with a lower alkyl group, an alkoxy group or a halogen atom.
상기 식(b1)으로 나타내어지는 옥심술포네이트 잔기를 함유하는 화합물로서는 식(OS-3), 식(OS-4) 또는 식(OS-5)으로 나타내어지는 옥심술포네이트 화합물인 것이 바람직하다.It is preferable that it is an oxime sulfonate compound represented by Formula (OS-3), Formula (OS-4), or Formula (OS-5) as a compound containing the oxime sulfonate residue represented by said Formula (b1). .
(식(OS-3)∼식(OS-5) 중, R1은 알킬기, 아릴기 또는 헤테로아릴기를 나타내고, R2는 각각 독립적으로 수소원자, 알킬기, 아릴기 또는 할로겐원자를 나타내고, R6은 각각 독립적으로 할로겐원자, 알킬기, 알킬옥시기, 술폰산기, 아미노술포닐기 또는 알콕시술포닐기를 나타내고, X는 O 또는 S를 나타내고, n은 1 또는 2를 나타내고, m은 0∼6의 정수를 나타낸다)(In formulas (OS-3) to (OS-5), R 1 represents an alkyl group, an aryl group, or a heteroaryl group, and R 2 each independently represents a hydrogen atom, an alkyl group, an aryl group, or a halogen atom, and R 6 Each independently represents a halogen atom, an alkyl group, an alkyloxy group, a sulfonic acid group, an aminosulfonyl group or an alkoxysulfonyl group, X represents O or S, n represents 1 or 2, and m represents an integer from 0 to 6 Indicates)
상기 식(OS-3)∼(OS-5) 중, R1에 있어서의 알킬기, 아릴기 또는 헤테로아릴기는 치환기를 갖고 있어도 좋다.In the formulas (OS-3) to (OS-5), the alkyl group, aryl group, or heteroaryl group for R 1 may have a substituent.
상기 식(OS-3)∼(OS-5) 중, R1에 있어서의 알킬기로서는 치환기를 갖고 있어도 좋은 총탄소수 1∼30의 알킬기인 것이 바람직하다.Among the formulas (OS-3) to (OS-5), the alkyl group for R 1 is preferably an alkyl group having 1 to 30 carbon atoms which may have a substituent.
R1에 있어서의 알킬기가 갖고 있어도 좋은 치환기로서는 할로겐원자, 알킬옥시기, 아릴옥시기, 알킬티오기, 아릴티오기, 알킬옥시카르보닐기, 아릴옥시카르보닐기, 아미노카르보닐기를 들 수 있다.Examples of the substituent that the alkyl group in R 1 may have include a halogen atom, an alkyloxy group, an aryloxy group, an alkylthio group, an arylthio group, an alkyloxycarbonyl group, an aryloxycarbonyl group, and an aminocarbonyl group.
R1에 있어서의 알킬기로서는 메틸기, 에틸기, n-프로필기, i-프로필기, n-부틸기, s-부틸기, t-부틸기, n-펜틸기, n-헥실기, n-옥틸기, n-데실기, n-도데실기, 트리플루오로메틸기, 퍼플루오로프로필기, 퍼플루오로헥실기, 벤질기를 들 수 있다.Examples of the alkyl group for R 1 are methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, s-butyl group, t-butyl group, n-pentyl group, n-hexyl group, and n-octyl group. , n-decyl group, n-dodecyl group, trifluoromethyl group, perfluoropropyl group, perfluorohexyl group, benzyl group.
또한, 상기 식(OS-3)∼(OS-5) 중, R1에 있어서의 아릴기로서는 치환기를 가져도 좋은 총탄소수 6∼30의 아릴기가 바람직하다.Moreover, among the formulas (OS-3) to (OS-5), the aryl group for R 1 is preferably an aryl group having 6 to 30 carbon atoms, which may have a substituent.
R1에 있어서의 아릴기가 갖고 있어도 좋은 치환기로서는 할로겐원자, 알킬기, 알킬옥시기, 아릴옥시기, 알킬티오기, 아릴티오기, 알킬옥시카르보닐기, 아릴옥시카르보닐기, 아미노카르보닐기, 술폰산기, 아미노술포닐기, 알콕시술포닐기를 들 수 있다.Examples of the substituent which the aryl group in R 1 may have include a halogen atom, an alkyl group, an alkyloxy group, an aryloxy group, an alkylthio group, an arylthio group, an alkyloxycarbonyl group, an aryloxycarbonyl group, an aminocarbonyl group, a sulfonic acid group, and an aminosulfonyl group. And an alkoxysulfonyl group.
R1에 있어서의 아릴기로서는 페닐기, p-메틸페닐기, p-클로로페닐기, 펜타클로로페닐기, 펜타플루오로페닐기, o-메톡시페닐기, p-페녹시페닐기를 들 수 있다. Examples of the aryl group for R 1 include a phenyl group, p-methylphenyl group, p-chlorophenyl group, pentachlorophenyl group, pentafluorophenyl group, o-methoxyphenyl group, and p-phenoxyphenyl group.
또한, 상기 식(OS-3)∼(OS-5) 중, R1에 있어서의 헤테로아릴기로서는 치환기를 가져도 좋은 총탄소수 4∼30의 헤테로아릴기가 바람직하다.Moreover, in the formulas (OS-3) to (OS-5), a heteroaryl group having 4 to 30 carbon atoms is preferable as the heteroaryl group for R 1 .
R1에 있어서의 헤테로아릴기가 갖고 있어도 좋은 치환기로서는 할로겐원자, 알킬기, 알킬옥시기, 아릴옥시기, 알킬티오기, 아릴티오기, 알킬옥시카르보닐기, 아릴옥시카르보닐기, 아미노카르보닐기, 술폰산기, 아미노술포닐기, 알콕시술포닐기를 들 수 있다.As a substituent which the heteroaryl group in R 1 may have, a halogen atom, an alkyl group, an alkyloxy group, an aryloxy group, an alkylthio group, an arylthio group, an alkyloxycarbonyl group, an aryloxycarbonyl group, an aminocarbonyl group, a sulfonic acid group, an amino sulfo And a nil group and an alkoxysulfonyl group.
상기 식(OS-3)∼(OS-5) 중, R1에 있어서의 헤테로아릴기는 적어도 1개의 환이 복소 방향환이면 좋고, 예를 들면, 복소 방향환과 벤젠환이 축환되어 있어도 좋다.In the formulas (OS-3) to (OS-5), the heteroaryl group for R 1 may be at least one ring as long as it is a heteroaromatic ring, and for example, the heteroaromatic ring and benzene ring may be condensed.
R1에 있어서의 헤테로아릴기로서는 치환기를 갖고 있어도 좋은 티오펜환, 피롤환, 티아졸환, 이미다졸환, 푸란환, 벤조티오펜환, 벤조티아졸환, 및 벤조이미다졸환으로 이루어지는 군에서 선택된 환으로부터 1개의 수소원자를 제외한 기를 들 수 있다.The heteroaryl group for R 1 is selected from the group consisting of thiophene ring, pyrrole ring, thiazole ring, imidazole ring, furan ring, benzothiophene ring, benzothiazole ring, and benzoimidazole ring which may have a substituent. The group which excluded one hydrogen atom from the ring is mentioned.
상기 식(OS-3)∼(OS-5) 중, R2는 수소원자, 알킬기 또는 아릴기인 것이 바람직하고, 수소원자 또는 알킬기인 것이 보다 바람직하다.In the formulas (OS-3) to (OS-5), R 2 is preferably a hydrogen atom, an alkyl group or an aryl group, and more preferably a hydrogen atom or an alkyl group.
상기 식(OS-3)∼(OS-5) 중, 화합물 중에 2 이상 존재하는 R2 중 1개 또는 2개가 알킬기, 아릴기 또는 할로겐원자인 것이 바람직하고, 1개가 알킬기, 아릴기 또는 할로겐원자인 것이 보다 바람직하고, 1개가 알킬기이며, 또한 나머지가 수소원자인 것이 특히 바람직하다.In the formulas (OS-3) to (OS-5), one or two of R 2 present in two or more compounds is preferably an alkyl group, an aryl group or a halogen atom, and one is an alkyl group, an aryl group or a halogen atom. It is more preferable that it is, one is an alkyl group, and the rest are particularly preferably hydrogen atoms.
상기 식(OS-3)∼(OS-5) 중, R2에 있어서의 알킬기 또는 아릴기는 치환기를 갖고 있어도 좋다.In the formulas (OS-3) to (OS-5), the alkyl group or aryl group for R 2 may have a substituent.
R2에 있어서의 알킬기 또는 아릴기가 갖고 있어도 좋은 치환기로서는 상기 R1에 있어서의 알킬기 또는 아릴기가 갖고 있어도 좋은 치환기와 같은 기를 예시할 수 있다.As a substituent which the alkyl group or aryl group in R 2 may have, the same group as the substituent which the alkyl group or aryl group in R 1 may have may be exemplified.
R2에 있어서의 알킬기로서는 치환기를 가져도 좋은 총탄소수 1∼12의 알킬기인 것이 바람직하고, 치환기를 가져도 좋은 총탄소수 1∼6의 알킬기인 것이 보다 바람직하다.The alkyl group for R 2 is preferably an alkyl group having 1 to 12 total carbons which may have a substituent, and more preferably an alkyl group having 1 to 6 total carbons which may have a substituent.
R2에 있어서의 알킬기로서는 메틸기, 에틸기, n-프로필기, i-프로필기, n-부틸기, i-부틸기, s-부틸기, n-헥실기, 알릴기, 클로로메틸기, 브로모메틸기, 메톡시메틸기, 벤질기가 바람직하고, 메틸기, 에틸기, n-프로필기, i-프로필기, n-부틸기, i-부틸기, s-부틸기, n-헥실기가 바람직하고, 메틸기, 에틸기, n-프로필기, n-부틸기, n-헥실기가 더욱 바람직하고, 메틸기가 바람직하다.Examples of the alkyl group for R 2 are methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, s-butyl group, n-hexyl group, allyl group, chloromethyl group, and bromomethyl group. , Methoxymethyl group, benzyl group is preferred, methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, s-butyl group, n-hexyl group is preferred, methyl group, ethyl group , n-propyl group, n-butyl group, n-hexyl group is more preferable, and a methyl group is preferred.
R2에 있어서의 아릴기로서는 치환기를 가져도 좋은 총탄소수 6∼30의 아릴기인 것이 바람직하다.The aryl group for R 2 is preferably an aryl group having 6 to 30 carbon atoms, which may have a substituent.
R2에 있어서의 아릴기로서 구체적으로는 페닐기, p-메틸페닐기, o-클로로페닐기, p-클로로페닐기, o-메톡시페닐기, p-페녹시페닐기가 바람직하다.As the aryl group for R 2 , specifically, a phenyl group, p-methylphenyl group, o-chlorophenyl group, p-chlorophenyl group, o-methoxyphenyl group, or p-phenoxyphenyl group is preferable.
R2에 있어서의 할로겐원자로서는 불소원자, 염소원자, 브롬원자, 요오드원자를 들 수 있다.Examples of the halogen atom for R 2 include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
이들 중에서도, 염소원자, 브롬원자가 바람직하다.Among these, chlorine atom and bromine atom are preferable.
상기 식(OS-3)∼(OS-5) 중, X는 O 또는 S를 나타내고, O인 것이 바람직하다.In the formulas (OS-3) to (OS-5), X represents O or S and is preferably O.
식(OS-3)∼(OS-5)에 있어서 X를 환원으로서 포함하는 환은 5원환 또는 6원환이다.In Formulas (OS-3) to (OS-5), the ring containing X as a reduction is a 5-membered ring or a 6-membered ring.
상기 식(OS-3)∼(OS-5) 중, n은 1 또는 2를 나타내고, X가 O일 경우, n은 1인 것이 바람직하고, 또한, X가 S일 경우, n은 2인 것이 바람직하다.In the formulas (OS-3) to (OS-5), n represents 1 or 2, and when X is O, n is preferably 1, and when X is S, n is 2 desirable.
상기 식(OS-3)∼(OS-5) 중, R6에 있어서의 알킬기 및 알킬옥시기는 치환기를 갖고 있어도 좋다.In the formulas (OS-3) to (OS-5), the alkyl group and alkyloxy group for R 6 may have a substituent.
상기 식(OS-3)∼(OS-5) 중, R6에 있어서의 알킬기로서는 치환기를 갖고 있어도 좋은 총탄소수 1∼30의 알킬기인 것이 바람직하다.Among the formulas (OS-3) to (OS-5), the alkyl group for R 6 is preferably an alkyl group having 1 to 30 carbon atoms which may have a substituent.
R6에 있어서의 알킬기가 갖고 있어도 좋은 치환기로서는 할로겐원자, 알킬옥시기, 아릴옥시기, 알킬티오기, 아릴티오기, 알킬옥시카르보닐기, 아릴옥시카르보닐기, 아미노카르보닐기를 들 수 있다.Examples of the substituent which the alkyl group in R 6 may have include a halogen atom, an alkyloxy group, an aryloxy group, an alkylthio group, an arylthio group, an alkyloxycarbonyl group, an aryloxycarbonyl group, and an aminocarbonyl group.
R6에 있어서의 알킬기로서는 메틸기, 에틸기, n-프로필기, i-프로필기, n-부틸기, s-부틸기, t-부틸기, n-펜틸기, n-헥실기, n-옥틸기, n-데실기, n-도데실기, 트리플루오로메틸기, 퍼플루오로프로필기, 퍼플루오로헥실기, 벤질기가 바람직하다.Examples of the alkyl group for R 6 are methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, s-butyl group, t-butyl group, n-pentyl group, n-hexyl group, and n-octyl group. , n-decyl group, n-dodecyl group, trifluoromethyl group, perfluoropropyl group, perfluorohexyl group, benzyl group is preferred.
상기 식(OS-3)∼(OS-5) 중, R6에 있어서의 알킬옥시기로서는 치환기를 가져도 좋은 총탄소수 1∼30의 알킬옥시기인 것이 바람직하다.In the formulas (OS-3) to (OS-5), the alkyloxy group for R 6 is preferably an alkyloxy group having 1 to 30 carbon atoms which may have a substituent.
R6에 있어서의 알킬옥시기가 갖고 있어도 좋은 치환기로서는 할로겐원자, 알킬옥시기, 아릴옥시기, 알킬티오기, 아릴티오기, 알킬옥시카르보닐기, 아릴옥시카르보닐기, 아미노카르보닐기를 들 수 있다.Examples of the substituent which the alkyloxy group in R 6 may have include a halogen atom, an alkyloxy group, an aryloxy group, an alkylthio group, an arylthio group, an alkyloxycarbonyl group, an aryloxycarbonyl group, and an aminocarbonyl group.
R6에 있어서의 알킬옥시기로서는 메틸옥시기, 에틸옥시기, 부틸옥시기, 헥실옥시기, 페녹시에틸옥시기, 트리클로로메틸옥시기, 또는 에톡시에틸옥시기가 바람직하다.The alkyloxy group for R 6 is preferably a methyloxy group, ethyloxy group, butyloxy group, hexyloxy group, phenoxyethyloxy group, trichloromethyloxy group, or ethoxyethyloxy group.
상기 식(OS-3)∼(OS-5) 중, R6에 있어서의 아미노술포닐기로서는 메틸아미노술포닐기, 디메틸아미노술포닐기, 페닐아미노술포닐기, 메틸페닐아미노술포닐기, 아미노술포닐기를 들 수 있다.In the formulas (OS-3) to (OS-5), examples of the aminosulfonyl group for R 6 include methylaminosulfonyl group, dimethylaminosulfonyl group, phenylaminosulfonyl group, methylphenylaminosulfonyl group and aminosulfonyl group. have.
상기 식(OS-3)∼(OS-5) 중, R6에 있어서의 알콕시술포닐기로서는 메톡시술포닐기, 에톡시술포닐기, 프로필옥시술포닐기, 부틸옥시술포닐기를 들 수 있다.In the formulas (OS-3) to (OS-5), examples of the alkoxysulfonyl group for R 6 include a methoxysulfonyl group, an ethoxysulfonyl group, a propyloxysulfonyl group, and a butyloxysulfonyl group.
또한, 상기 식(OS-3)∼(OS-5) 중, m은 0∼6의 정수를 나타내고, 0∼2의 정수인 것이 바람직하고, 0 또는 1인 것이 보다 바람직하고, 0인 것이 특히 바람직하다.Further, in the formulas (OS-3) to (OS-5), m represents an integer from 0 to 6, preferably an integer from 0 to 2, more preferably 0 or 1, and particularly preferably 0. Do.
또한, 상기 식(b1)으로 나타내어지는 옥심술포네이트 잔기를 함유하는 화합물은 하기 식(OS-6)∼(OS-11) 중 어느 하나로 나타내어지는 옥심술포네이트 화합물인 것이 특히 바람직하다.In addition, it is particularly preferable that the compound containing an oxime sulfonate residue represented by the formula (b1) is an oxime sulfonate compound represented by any one of the following formulas (OS-6) to (OS-11).
(식(OS-6)∼(OS-11) 중, R1은 알킬기, 아릴기 또는 헤테로아릴기를 나타내고, R7은 수소원자 또는 브롬원자를 나타내고, R8은 수소원자, 탄소수 1∼8의 알킬기, 할로겐원자, 클로로메틸기, 브로모메틸기, 브로모에틸기, 메톡시메틸기, 페닐기 또는 클로로페닐기를 나타내고, R9는 수소원자, 할로겐원자, 메틸기 또는 메톡시기를 나타내고, R10은 수소원자 또는 메틸기를 나타낸다)(In formulas (OS-6) to (OS-11), R 1 represents an alkyl group, an aryl group, or a heteroaryl group, R 7 represents a hydrogen atom or a bromine atom, R 8 represents a hydrogen atom, and has 1 to 8 carbon atoms. Alkyl group, halogen atom, chloromethyl group, bromomethyl group, bromoethyl group, methoxymethyl group, phenyl group or chlorophenyl group, R 9 represents a hydrogen atom, halogen atom, methyl group or methoxy group, R 10 hydrogen atom or methyl group Indicates)
식(OS-6)∼(OS-11)에 있어서의 R1은 상기 식(OS-3)∼(OS-5)에 있어서의 R1과 동의이며, 바람직한 형태도 같다.Expression (OS-6) ~ R 1 in (OS-11) is R 1 and agreed in the formula (OS-3) ~ (OS -5), as a preferred form.
식(OS-6)에 있어서의 R7은 수소원자 또는 브롬원자를 나타내고, 수소원자인 것이 바람직하다.R 7 in formula (OS-6) represents a hydrogen atom or a bromine atom, and is preferably a hydrogen atom.
식(OS-6)∼(OS-11)에 있어서의 R8은 수소원자, 탄소수 1∼8의 알킬기, 할로겐원자, 클로로메틸기, 브로모메틸기, 브로모에틸기, 메톡시메틸기, 페닐기 또는 클로로페닐기를 나타내고, 탄소수 1∼8의 알킬기, 할로겐원자 또는 페닐기인 것이 바람직하고, 탄소수 1∼8의 알킬기인 것이 보다 바람직하고, 탄소수 1∼6의 알킬기인 것이 더욱 바람직하고, 메틸기인 것이 특히 바람직하다.R 8 in the formulas (OS-6) to (OS-11) is a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, a halogen atom, a chloromethyl group, a bromomethyl group, a bromoethyl group, a methoxymethyl group, a phenyl group or a chlorophenyl group It represents, It is preferable that it is a C1-C8 alkyl group, a halogen atom, or a phenyl group, It is more preferable that it is a C1-C8 alkyl group, It is more preferable that it is a C1-C6 alkyl group, It is especially preferable that it is a methyl group.
식(OS-8) 및 식(OS-9)에 있어서의 R9는 수소원자, 할로겐원자, 메틸기 또는 메톡시기를 나타내고, 수소원자인 것이 바람직하다.R 9 in formula (OS-8) and formula (OS-9) represents a hydrogen atom, a halogen atom, a methyl group or a methoxy group, and is preferably a hydrogen atom.
식(OS-8)∼(OS-11)에 있어서의 R10은 수소원자 또는 메틸기를 나타내고, 수소원자인 것이 바람직하다.R 10 in formulas (OS-8) to (OS-11) represents a hydrogen atom or a methyl group, and is preferably a hydrogen atom.
또한, 상기 옥심술포네이트 화합물에 있어서 옥심의 입체구조(E, Z)에 대해서는 어느 한쪽이어도 혼합물이어도 좋다.In addition, in the oxime sulfonate compound, any one of the three-dimensional structures (E, Z) of the oxime may be a mixture.
상기 식(OS-3)∼식(OS-5)으로 나타내어지는 옥심술포네이트 화합물의 구체예로서는 하기 예시 화합물을 들 수 있지만, 본 발명은 이들에 한정되는 것은 아니다.Although the following example compound is mentioned as a specific example of the oxime sulfonate compound represented by said Formula (OS-3)-Formula (OS-5), This invention is not limited to these.
식(b1)으로 나타내어지는 옥심술포네이트 잔기를 함유하는 상기 화합물로서는 식(OS-1)으로 나타내어지는 화합물인 것도 바람직하다.It is also preferable that it is a compound represented by Formula (OS-1) as said compound containing the oxime sulfonate residue represented by Formula (b1).
(식(OS-1) 중, R1은 수소원자, 알킬기, 알케닐기, 알콕시기, 알콕시카르보닐기, 아실기, 카르바모일기, 술파모일기, 술포기, 시아노기, 아릴기, 또는 헤테로아릴기를 나타낸다. R2는 알킬기, 또는 아릴기를 나타낸다)(In formula (OS-1), R 1 is a hydrogen atom, an alkyl group, an alkenyl group, an alkoxy group, an alkoxycarbonyl group, an acyl group, a carbamoyl group, a sulfamoyl group, a sulfo group, a cyano group, an aryl group, or a heteroaryl group R 2 represents an alkyl group or an aryl group)
X는 -O-, -S-, -NH-, -NR5-, -CH2-, -CR6H-, 또는 -CR6R7-을 나타내고, R5∼R7은 알킬기, 또는 아릴기를 나타낸다.X represents -O-, -S-, -NH-, -NR 5- , -CH 2- , -CR 6 H-, or -CR 6 R 7- , R 5 to R 7 are alkyl groups, or aryl Group.
R21∼R24는 각각 독립적으로 수소원자, 할로겐원자, 알킬기, 알케닐기, 알콕시기, 아미노기, 알콕시카르보닐기, 알킬카르보닐기, 아릴카르보닐기, 아미드기, 술포기, 시아노기, 또는 아릴기를 나타낸다. R21∼R24 중 2개는 각각 서로 결합해서 환을 형성해도 좋다. R 21 to R 24 each independently represent a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkoxy group, an amino group, an alkoxycarbonyl group, an alkylcarbonyl group, an arylcarbonyl group, an amide group, a sulfo group, a cyano group, or an aryl group. Two of R 21 to R 24 may be bonded to each other to form a ring.
R21∼R24로서는 수소원자, 할로겐원자, 및 알킬기가 바람직하고, 또한, R21∼R24 중 적어도 2개가 서로 결합해서 아릴기를 형성하는 형태도 또 바람직하게 들 수 있다. 그 중에서도, R21∼R24가 모두 수소원자인 형태가 감도의 관점에서 바람직하다.As R 21 to R 24 , a hydrogen atom, a halogen atom, and an alkyl group are preferable, and a form in which at least two of R 21 to R 24 are bonded to each other to form an aryl group is also preferable. Among them, the form in which R 21 to R 24 are all hydrogen atoms is preferred from the viewpoint of sensitivity.
상술한 관능기는 모두 치환기를 더 갖고 있어도 좋다.All of the functional groups described above may further have a substituent.
상기 식(OS-1)으로 나타내어지는 화합물은 하기 식(OS-2)으로 나타내어지는 화합물인 것이 보다 바람직하다.It is more preferable that the compound represented by the formula (OS-1) is a compound represented by the following formula (OS-2).
상기 식(OS-2) 중, R1, R2, R21∼R24는 각각 식(OS-1)에 있어서의 것과 동의이며, 바람직한 예도 또 같다.In the formula (OS-2), R 1 , R 2 , and R 21 to R 24 are the same as those in the formula (OS-1), and preferred examples are also the same.
이들 중에서도, 식(OS-1) 및 식(OS-2)에 있어서의 R1이 시아노기, 또는 아릴기인 형태가 보다 바람직하고, 식(OS-2)으로 나타내어지며, R1이 시아노기, 페닐기 또는 나프틸기인 형태가 가장 바람직하다.Among these, the form in which R 1 in formula (OS-1) and formula (OS-2) is a cyano group or an aryl group is more preferable, represented by formula (OS-2), and R 1 is a cyano group, The most preferred form is a phenyl group or naphthyl group.
또한, 상기 옥심술포네이트 화합물에 있어서 옥심이나 벤조티아졸환의 입체구조(E, Z 등)에 대해서는 각각 어느 한쪽이어도 혼합물이어도 좋다.In addition, in the oxime sulfonate compound, any one of the three-dimensional structures (E, Z, etc.) of an oxime or a benzothiazole ring may be a mixture, respectively.
이하에, 본 발명에 바람직하게 사용할 수 있는 식(OS-1)으로 나타내어지는 화합물의 구체예(예시 화합물 b-1∼b-34)를 나타내지만, 본 발명은 이것에 한정되지 않는다. 또한, Me는 메틸기를 나타내고, Et는 에틸기를 나타내고, Bn은 벤질기를 나타내고, Ph는 페닐기를 나타낸다. Below, although the specific example (example compounds b-1-b-34) of the compound represented by Formula (OS-1) which can be used suitably for this invention is shown, this invention is not limited to this. In addition, Me represents a methyl group, Et represents an ethyl group, Bn represents a benzyl group, and Ph represents a phenyl group.
상기 화합물 중에서도, 감도와 안정성의 양립의 관점에서 b-9, b-16, b-31, b-33이 바람직하다.Among these compounds, b-9, b-16, b-31, and b-33 are preferred from the viewpoint of compatibility of sensitivity and stability.
식(b1)으로 나타내어지는 옥심술포네이트 잔기를 함유하는 상기 화합물은 하기 식(b2)으로 나타내어지는 옥심술포네이트 화합물이어도 좋다.The compound containing an oxime sulfonate residue represented by the formula (b1) may be an oxime sulfonate compound represented by the following formula (b2).
(식(b2) 중, R5는 알킬기 또는 아릴기를 나타내고, X는 알킬기, 알콕시기, 또는 할로겐원자를 나타내고, m은 0∼3의 정수를 나타내고, m이 2 또는 3일 때, 복수의 X는 동일해도 달라도 좋다)(In formula (b2), R 5 represents an alkyl group or an aryl group, X represents an alkyl group, an alkoxy group, or a halogen atom, m represents an integer of 0 to 3, and m is 2 or 3, a plurality of X May be the same or different)
X로서의 알킬기는 탄소수 1∼4의 직쇄상 또는 분기상 알킬기가 바람직하다.The alkyl group as X is preferably a linear or branched alkyl group having 1 to 4 carbon atoms.
X로서의 알콕시기는 탄소수 1∼4의 직쇄상 또는 분기상 알콕시기가 바람직하다.The alkoxy group as X is preferably a linear or branched alkoxy group having 1 to 4 carbon atoms.
X로서의 할로겐원자는 염소원자 또는 불소원자가 바람직하다.The halogen atom as X is preferably a chlorine atom or a fluorine atom.
m은 0 또는 1이 바람직하다.m is preferably 0 or 1.
식(b2) 중, m이 1이며, X가 메틸기이며, X의 치환 위치가 오르토 위치이며, R5이 탄소수 1∼10의 직쇄상 알킬기, 7,7-디메틸-2-옥소노르보르닐메틸기, 또는 p-톨루일기인 화합물이 특히 바람직하다.In formula (b2), m is 1, X is a methyl group, the substitution position of X is an ortho position, R5 is a linear alkyl group having 1 to 10 carbon atoms, 7,7-dimethyl-2-oxonorbornylmethyl group, Or a compound which is a p-toluyl group is particularly preferable.
식(b1)으로 나타내어지는 옥심술포네이트 잔기를 함유하는 화합물은 식(b3)으로 나타내어지는 옥심술포네이트 화합물이어도 좋다.The compound containing an oxime sulfonate residue represented by formula (b1) may be an oxime sulfonate compound represented by formula (b3).
(식(b3) 중, R5는 식(b1)에 있어서의 R5와 동의이며, X'는 할로겐원자, 수산기, 탄소수 1∼4의 알킬기, 탄소수 1∼4의 알콕시기, 시아노기 또는 니트로기를 나타내고, L은 0∼5의 정수를 나타낸다)(Wherein (b3) of, R 5 is R 5 as agreed in the formula (b1), X 'is an alkoxy group of the alkyl group, having 1 to 4 carbon atoms a halogen atom, a hydroxyl group, having 1 to 4 carbon atoms, a cyano group or a nitro group Group, and L represents an integer from 0 to 5)
식(b3)에 있어서의 R5로서는 메틸기, 에틸기, n-프로필기, n-부틸기, n-옥틸기, 트리플루오로메틸기, 펜타플루오로에틸기, 퍼플루오로-n-프로필기, 퍼플루오로-n-부틸기, p-톨릴기, 4-클로로페닐기 또는 펜타플루오로페닐기가 바람직하고, n-옥틸기가 특히 바람직하다.As R 5 in the formula (b3), a methyl group, ethyl group, n-propyl group, n-butyl group, n-octyl group, trifluoromethyl group, pentafluoroethyl group, perfluoro-n-propyl group, perfluoro A ro-n-butyl group, p-tolyl group, 4-chlorophenyl group or pentafluorophenyl group is preferred, and n-octyl group is particularly preferred.
X'로서는 탄소수 1∼5의 알콕시기가 바람직하고, 메톡시기가 보다 바람직하다.As X ', an alkoxy group having 1 to 5 carbon atoms is preferable, and a methoxy group is more preferable.
L로서는 0∼2가 바람직하고, 0∼1이 특히 바람직하다. As L, 0-2 are preferable and 0-1 are especially preferable.
식(b3)으로 나타내어지는 화합물의 구체예로서는 α-(메틸술포닐옥시이미노)벤질시아니드, α-(에틸술포닐옥시이미노)벤질시아니드, α-(n-프로필술포닐옥시이미노)벤질시아니드, α-(n-부틸술포닐옥시이미노)벤질시아니드, α-(4-톨루엔술포닐옥시이미노)벤질시아니드, α-〔(메틸술포닐옥시이미노)-4-메톡시페닐〕아세토니트릴, α-〔(에틸술포닐옥시이미노)-4-메톡시페닐〕아세토니트릴, α-〔(n-프로필술포닐옥시이미노)-4-메톡시페닐〕아세토니트릴, α-〔(n-부틸술포닐옥시이미노)-4-메톡시페닐〕아세토니트릴, α-〔(4-톨루엔술포닐옥시이미노)-4-메톡시페닐〕아세토니트릴을 들 수 있다.Specific examples of the compound represented by formula (b3) include α- (methylsulfonyloxyimino) benzyl cyanide, α- (ethylsulfonyloxyimino) benzyl cyanide, α- (n-propylsulfonyloxyimino) benzylsia Need, α- (n-butylsulfonyloxyimino) benzyl cyanide, α- (4-toluenesulfonyloxyimino) benzyl cyanide, α-[(methylsulfonyloxyimino) -4-methoxyphenyl] aceto Nitrile, α-[(ethylsulfonyloxyimino) -4-methoxyphenyl] acetonitrile, α-[(n-propylsulfonyloxyimino) -4-methoxyphenyl] acetonitrile, α-[(n- Butylsulfonyloxyimino) -4-methoxyphenyl] acetonitrile, α-[(4-toluenesulfonyloxyimino) -4-methoxyphenyl] acetonitrile.
바람직한 옥심술포네이트 화합물의 구체예로서는 하기 화합물(i)∼(viii) 등을 들 수 있고, 1종 단독으로 사용하거나, 또는 2종류 이상을 병용할 수 있다. 화합물(i)∼(viii)은 시판품으로서 입수할 수 있다. 또한, 다른 종류의 광산발생제(B)와 조합시켜서 사용할 수도 있다.The following compound (i)-(viii) etc. are mentioned as a specific example of a preferable oxime sulfonate compound, It can be used individually by 1 type, or can use 2 or more types together. Compounds (i) to (viii) can be obtained as commercial products. Moreover, it can also be used in combination with another kind of photo-acid generator (B).
본 발명의 감광성 수지 조성물에 있어서 광산발생제(B)는 수지성분 100중량부에 대해서 0.1∼10중량부 사용하는 것이 바람직하고, 0.5∼10중량부 사용하는 것이 보다 바람직하다.In the photosensitive resin composition of the present invention, the photoacid generator (B) is preferably used in an amount of 0.1 to 10 parts by weight, more preferably 0.5 to 10 parts by weight based on 100 parts by weight of the resin component.
<(C)성분><(C) component>
본 발명의 감광성 수지 조성물은 (C) 적어도 가교기를 갖는 중합체(폴리머)를 포함하는 것이 바람직하다.It is preferable that the photosensitive resin composition of this invention contains the polymer (polymer) which has (C) at least a crosslinking group.
(C)성분은 부가 중합형의 수지인 것이 바람직하고, (메타)아크릴산 및/또는 그 에스테르에 유래하는 구성 단위를 포함하는 중합체인 것이 보다 바람직하다. 또한, (메타)아크릴산 및/또는 그 에스테르에 유래하는 구성 단위 이외의 구성 단위, 예를 들면, 스티렌에 유래하는 구성 단위나, 비닐 화합물에 유래하는 구성 단위 등을 갖고 있어도 좋다.(C) It is preferable that a component is resin of an addition polymerization type, and it is more preferable that it is a polymer containing the structural unit derived from (meth) acrylic acid and / or its ester. Moreover, you may have a structural unit other than the structural unit derived from (meth) acrylic acid and / or its ester, for example, a structural unit derived from styrene, a structural unit derived from a vinyl compound, or the like.
(C)성분은 (메타)아크릴산 및/또는 그 에스테르에 유래하는 구성 단위를 중합체에 있어서의 전체 구성 단위에 대해서 50몰% 이상 함유하는 것이 바람직하고, 90몰% 이상 함유하는 것이 보다 바람직하고, (메타)아크릴산 및/또는 그 에스테르에 유래하는 구성 단위만으로 이루어지는 중합체인 것이 특히 바람직하다.It is preferable that (C) component contains 50 mol% or more of the structural unit derived from (meth) acrylic acid and / or its ester with respect to all the structural units in a polymer, and it is more preferable to contain 90 mol% or more, It is particularly preferable that it is a polymer composed of only structural units derived from (meth) acrylic acid and / or its esters.
또한, 「(메타)아크릴산 및/또는 그 에스테르에 유래하는 구성 단위」를 「아크릴계 구성 단위」라고도 한다. 또한, 「(메타)아크릴산」은 「메타크릴산 및/또는 아크릴산」을 의미하는 것으로 한다.Moreover, "the structural unit derived from (meth) acrylic acid and / or its ester" is also called an "acrylic structural unit". In addition, "(meth) acrylic acid" shall mean "methacrylic acid and / or acrylic acid."
(C)성분은 또한, (c1)산기가 산분해성기로 보호된 잔기를 갖는 구성 단위를 포함하고 있어도 좋다. (C)성분이 (c1)을 함유함으로써 감도가 향상되고, (c2)를 함유함으로써 영구막 특성이 향상된다. 또한, (C)성분은 -NH-CH2-O-R(R은 알킬기)을 갖는 구성 단위를 실질적으로 포함하지 않는 쪽이 바람직하다. 이러한 구성으로 함으로써, 본 발명의 효과가 보다 효과적으로 발휘되는 경향이 있다. 여기에서, 실질적으로 포함하지 않는다란 본 발명의 효과에 영향을 주는 레벨로 첨가하지 않는 것을 말하고, 예를 들면, (C)성분의 앞구성 단위의 3몰% 이하, 또한 1몰% 이하로 하는 것을 들 수 있다.(C) component may also contain the structural unit which the (c1) acidic radical has the residue protected by the acid-decomposable group. (C) When component (c1) contains, sensitivity improves, and by containing (c2), the permanent film characteristic improves. Further, (C) component is the side that does not include a structural unit having -NH-CH 2 -OR (R is an alkyl group) in a substantially preferred. By setting it as such a structure, the effect of this invention tends to be exhibited more effectively. Here, substantially not included means not adding at a level that affects the effect of the present invention, for example, 3 mol% or less, and 1 mol% or less of the preceding constituent units of the component (C). Things are listed.
(C)성분의 (c1)로서는 상술한 <<(a1)산기가 산분해성기로 보호된 잔기를 갖는 구성 단위>>와 같은 기를 사용할 수 있다. 공중합체(C)를 구성하는 구성 단위 중, 구성 단위(c1)의 함유율은 감도의 관점에서 중합체를 전체로 해서 0∼95몰%가 바람직하고, 5∼90몰%가 보다 바람직하고, 20∼70몰%가 특히 바람직하다.As the component (c1) of the component (C), a group such as the above-described << (a1) structural unit having a residue protected by an acid-decomposable group >> can be used. Among the structural units constituting the copolymer (C), the content rate of the structural unit (c1) is preferably 0 to 95 mol%, more preferably 5 to 90 mol%, and 20 to 20 mol%, with the polymer as a whole from the viewpoint of sensitivity. 70 mol% is particularly preferable.
(C)성분의 (c2)로서는 상술의 <<(a3)가교기를 갖는 구성 단위>>와 같은 기를 사용할 수 있다. 바람직한 형태도 같다. 공중합체(C)를 구성하는 구성 단위 중, 구성 단위(c2)의 함유율은 감도의 관점에서 중합체를 전체로 해서 0∼95몰%가 바람직하고, 5∼90몰%가 보다 바람직하고, 30∼70몰%가 특히 바람직하다.As the component (c2) of the component (C), groups such as the above-mentioned << (a3) structural unit having a crosslinking group >> can be used. The preferred form is also the same. Among the structural units constituting the copolymer (C), the content rate of the structural unit (c2) is preferably 0 to 95 mol%, more preferably 5 to 90 mol%, and 30 to 30 mol%, with the polymer as a whole from the viewpoint of sensitivity. 70 mol% is particularly preferable.
(C)성분은 (c1), (c2) 및 (a2)를 제외하고, 그 밖의 구성 단위(c3)를 갖고 있어도 좋다. 그 밖의 구성 단위(c3)가 되는 모노머로서는 특별히 제한은 없다. 상술한 [반복단위(a3)], 및 <<(a4)기타의 구성 단위>>와 같은 기를 바람직하게 사용할 수 있다. 바람직한 형태도 같다. 바람직한 범위도 같다.(C) A component may have other structural units (c3) except (c1), (c2), and (a2). There is no restriction | limiting in particular as a monomer which becomes another structural unit (c3). Groups such as the above-described [repeating unit (a3)] and << (a4) other structural units >> can be preferably used. The preferred form is also the same. The preferred range is also the same.
<<(C)성분의 분자량>><< (C) molecular weight of component >>
(C)성분의 분자량은 폴리스티렌 환산 중량 평균 분자량으로 바람직하게는 1,000∼200,000, 보다 바람직하게는 2,000∼50,000의 범위이다. 상기 수치의 범위내이면 여러가지특성이 양호하다. 수평균 분자량과 중량 평균 분자량의 비(분산도)은 1.0∼5.0이 바람직하고, 1.5∼3.5가 보다 바람직하다.The molecular weight of the component (C) is a weight average molecular weight in terms of polystyrene, preferably 1,000 to 200,000, more preferably 2,000 to 50,000. Various characteristics are favorable as long as it is within the range of the above values. The ratio (dispersity) between the number average molecular weight and the weight average molecular weight is preferably 1.0 to 5.0, and more preferably 1.5 to 3.5.
<<(C)성분의 분자량의 제조 방법>><< Method for producing molecular weight of component (C) >>
(C)성분의 합성법에 대해서도 여러가지 방법이 알려져 있지만, 일례를 들면 상기 (c1) 및 상기 (c2)로 나타내어지는 구성 단위를 형성하기 위해서 사용되는 라디칼 중합성 단량체를 포함하는 라디칼 중합성 단량체 혼합물을 유기용제 중 라디칼 중합 개시제를 사용해서 중합함으로써 합성할 수 있다. 또한, 소위 고분자 반응으로 합성할 수도 있다.Although various methods are known for the method for synthesizing the component (C), for example, a radically polymerizable monomer mixture containing a radically polymerizable monomer used to form the structural units represented by (c1) and (c2) above is used. It can be synthesized by polymerization using a radical polymerization initiator in an organic solvent. It can also be synthesized by a so-called polymer reaction.
(A)성분과 마찬가지로 말단에 카르복시기를 갖는 것도 바람직하다.It is also preferable to have a carboxyl group at the terminal similar to the component (A).
(C)성분의 예로서(C) Examples of ingredients
메타크릴산-3,4-에폭시시클로헥실메틸/아크릴산/히드록시스티렌/메타크릴산 메틸 공중합체(몰비로 30/40/15/15, Mw 7000)Methacrylic acid-3,4-epoxycyclohexylmethyl / acrylic acid / hydroxystyrene / methyl methacrylate copolymer (30/40/15/15 in molar ratio, Mw 7000)
메타크릴산 글리시딜/메타크릴산/스티렌/디시클로펜타닐메타크릴레이트 공중합체(몰비로 70/10/10/10, Mw 15000)Methacrylic acid glycidyl / methacrylic acid / styrene / dicyclopentanyl methacrylate copolymer (molar ratio 70/10/10/10, Mw 15000)
p-비닐벤질글리시딜에테르/(3-에틸-3-옥세타닐)메틸메타크릴레이트/말레산/메타크릴산 시클로헥실 공중합체(몰비로 25/25/30/20, Mw 27000)p-vinylbenzylglycidyl ether / (3-ethyl-3-oxetanyl) methyl methacrylate / maleic acid / methacrylic acid cyclohexyl copolymer (25/25/30/20 in molar ratio, Mw 27000)
메타크릴산 1-에톡시에틸/메타크릴산/메타크릴산(3-에틸옥세탄-3-일)메틸/메타크릴산 2-히드록시에틸/메타크릴산 메틸 공중합체(38/7/35/15/5, Mw 35000),Methacrylic acid 1-ethoxyethyl / methacrylic acid / methacrylic acid (3-ethyloxetan-3-yl) methyl / methacrylic acid 2-hydroxyethyl / methyl methacrylate copolymer (38/7/35 / 15/5, Mw 35000),
메타크릴산 1-시클로헥실옥시에틸/메타크릴산/메톡시폴리에틸렌글리콜메타크릴레이트(브렘머 PME-400, 니치유(주) 공중합체(70/10/10, Mw 45000)Methacrylic acid 1-cyclohexyloxyethyl / methacrylic acid / methoxypolyethylene glycol methacrylate (Bremmer PME-400, Nichiyu Co., Ltd. (70/10/10, Mw 45000)
(3-에틸-3-옥세타닐)메틸아크릴레이트/메타크릴산/N-페닐말레이미드 공중합체(몰비로 30/30/, Mw 57000)를 들 수 있다.(3-ethyl-3-oxetanyl) methyl acrylate / methacrylic acid / N-phenylmaleimide copolymer (30/30 / in molar ratio, Mw 57000).
(C)성분의 함유량은 전체 폴리머 성분의 0∼80중량%가 바람직하고, 8∼70중량%가 보다 바람직하고, 30∼65중량%인 것이 더욱 바람직하고, 30∼50중량%가 특히 바람직하다. (C)성분을 2종류 이상 포함할 경우는 그 합계량이 상기 범위가 된다.The content of the component (C) is preferably 0 to 80% by weight of the total polymer component, more preferably 8 to 70% by weight, even more preferably 30 to 65% by weight, and particularly preferably 30 to 50% by weight. . (C) When 2 or more types of components are included, the total amount becomes said range.
<전체 중합체 성분에 대한 각 구성 단위의 비율><Ratio of each constituent unit to the total polymer component>
본 발명의 감광성 수지 조성물은 폴리머 성분의 99중량% 이상이 (A)성분 또는 (C)성분인 것이 바람직하다.It is preferable that 99 weight% or more of the photosensitive resin composition of this invention is (A) component or (C) component.
또한, 본 발명에서는 전체 중합체 성분 중의 구성 단위(a2)의 비율이 1∼50몰%인 것이 바람직하고, 10∼50몰%인 것이 보다 바람직하고, 15∼50몰%인 것이 더욱 바람직하다. 또한, 본 발명에서는 전체 중합체 성분 중의 가교기의 비율이 1∼40몰%인 것이 바람직하고, 10∼35몰%인 것이 보다 바람직하고, 15∼30몰%인 것이 더욱 바람직하다.In the present invention, the proportion of the structural unit (a2) in the total polymer component is preferably 1 to 50 mol%, more preferably 10 to 50 mol%, and even more preferably 15 to 50 mol%. In the present invention, the proportion of the crosslinking group in the total polymer component is preferably 1 to 40 mol%, more preferably 10 to 35 mol%, and even more preferably 15 to 30 mol%.
특히, 본 발명에서는 포지티브형 감광성 조성물에 포함되는 전체 중합체 성분의 10몰% 이상이 -NH-CH2-O-R(R은 알킬기)을 갖는 구성 단위(a2)이며, 전체 중합체 성분의 20몰% 이상이 가교기인 것이 바람직하다.In particular, in the present invention, 10 mol% or more of the total polymer component included in the positive photosensitive composition is a structural unit (a2) having -NH-CH 2 -OR (R is an alkyl group), and 20 mol% or more of the total polymer component. It is preferable that it is this crosslinking group.
또한, 본 발명에서는 전체 중합체 성분 중의 가교성기 및 구성 단위(a2)의 합계량의 비율이 10∼70몰%인 것이 바람직하고, 40∼60몰%인 것이 보다 바람직하다. 이러한 범위로 함으로써 본 발명의 효과가 보다 효과적으로 발휘되는 경향이 있다.Moreover, in this invention, it is preferable that the ratio of the total amount of a crosslinkable group and a structural unit (a2) in a whole polymer component is 10-70 mol%, and it is more preferable that it is 40-60 mol%. By setting it as such a range, the effect of this invention tends to be exhibited more effectively.
<(D) 용제><(D) Solvent>
본 발명의 감광성 수지 조성물은 통상 (D) 용제를 함유한다. 본 발명의 감광성 수지 조성물은 필수 성분, 바람직한 성분, 임의의 성분을 (D) 용제에 용해한 용액으로서 조제되는 것이 바람직하다.The photosensitive resin composition of this invention usually contains (D) solvent. It is preferable that the photosensitive resin composition of this invention is prepared as a solution which melt | dissolved the essential component, preferable component, and arbitrary components in (D) solvent.
본 발명의 감광성 수지 조성물에 사용되는 (D) 용제로서는 공지의 용제를 사용할 수 있고, 에틸렌글리콜모노알킬에테르류, 에틸렌글리콜디알킬에테르류, 에틸렌글리콜모노알킬에테르아세테이트류, 프로필렌글리콜모노알킬에테르류, 프로필렌글리콜디알킬에테르류, 프로필렌글리콜모노알킬에테르아세테이트류, 디에틸렌글리콜디알킬에테르류, 디에틸렌글리콜모노알킬에테르아세테이트류, 디프로필렌글리콜모노알킬에테르류, 디프로필렌글리콜디알킬에테르류, 디프로필렌글리콜모노알킬에테르아세테이트류, 에스테르류, 케톤류, 아미드류, 락톤류 등을 예시할 수 있다.As the (D) solvent used in the photosensitive resin composition of the present invention, a known solvent can be used, and ethylene glycol monoalkyl ethers, ethylene glycol dialkyl ethers, ethylene glycol monoalkyl ether acetates, and propylene glycol monoalkyl ethers , Propylene glycol dialkyl ethers, propylene glycol monoalkyl ether acetates, diethylene glycol dialkyl ethers, diethylene glycol monoalkyl ether acetates, dipropylene glycol monoalkyl ethers, dipropylene glycol dialkyl ethers, di And propylene glycol monoalkyl ether acetates, esters, ketones, amides and lactones.
본 발명의 감광성 수지 조성물에 사용되는 (D) 용제로서는 예를 들면,As a solvent (D) used for the photosensitive resin composition of this invention, For example,
(D-1)에틸렌글리콜모노메틸에테르, 에틸렌글리콜모노에틸에테르, 에틸렌글리콜모노프로필에테르, 에틸렌글리콜모노부틸에테르 등의 에틸렌글리콜모노알킬에테르류;(D-1) ethylene glycol monoalkyl ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, and ethylene glycol monobutyl ether;
(D-2)에틸렌글리콜디메틸에테르, 에틸렌글리콜디에틸에테르, 에틸렌글리콜디프로필에테르 등의 에틸렌글리콜디알킬에테르류;(D-2) ethylene glycol dialkyl ethers such as ethylene glycol dimethyl ether, ethylene glycol diethyl ether, and ethylene glycol dipropyl ether;
(D-3)에틸렌글리콜모노메틸에테르아세테이트, 에틸렌글리콜모노에틸에테르아세테이트, 에틸렌글리콜모노프로필에테르아세테이트, 에틸렌글리콜모노부틸에테르아세테이트 등의 에틸렌글리콜모노알킬에테르아세테이트류;(D-3) ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monopropyl ether acetate, and ethylene glycol monobutyl ether acetate;
(D-4)프로필렌글리콜모노메틸에테르, 프로필렌글리콜모노에틸에테르, 프로필렌글리콜모노프로필에테르, 프로필렌글리콜모노부틸에테르 등의 프로필렌글리콜모노알킬에테르류;(D-4) Propylene glycol monoalkyl ethers, such as propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, and propylene glycol monobutyl ether;
(D-5)프로필렌글리콜디메틸에테르, 프로필렌글리콜디에틸에테르, 디에틸렌글리콜모노메틸에테르, 디에틸렌글리콜모노에틸에테르 등의 프로필렌글리콜디알킬에테르류;(D-5) Propylene glycol dialkyl ethers such as propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, and diethylene glycol monoethyl ether;
(D-6)프로필렌글리콜모노메틸에테르아세테이트, 프로필렌글리콜모노에틸에테르아세테이트, 프로필렌글리콜모노프로필에테르아세테이트, 프로필렌글리콜모노부틸에테르아세테이트 등의 프로필렌글리콜모노알킬에테르아세테이트류;(D-6) propylene glycol monoalkyl ether acetates such as propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, and propylene glycol monobutyl ether acetate;
(D-7)디에틸렌글리콜디메틸에테르, 디에틸렌글리콜디에틸에테르, 디에틸렌글리콜에틸메틸에테르 등의 디에틸렌글리콜디알킬에테르류;(D-7) diethylene glycol dialkyl ethers such as diethylene glycol dimethyl ether, diethylene glycol diethyl ether, and diethylene glycol ethyl methyl ether;
(D-8)디에틸렌글리콜모노메틸에테르아세테이트, 디에틸렌글리콜모노에틸에테르아세테이트, 디에틸렌글리콜모노프로필에테르아세테이트, 디에틸렌글리콜모노부틸에테르아세테이트 등의 디에틸렌글리콜모노알킬에테르아세테이트류;(D-8) diethylene glycol monoalkyl ether acetates such as diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monopropyl ether acetate and diethylene glycol monobutyl ether acetate;
(D-9)디프로필렌글리콜모노메틸에테르, 디프로필렌글리콜모노에틸에테르, 디프로필렌글리콜모노프로필에테르, 디프로필렌글리콜모노부틸에테르 등의 디프로필렌글리콜모노알킬에테르류; (코)디프로필렌글리콜디메틸에테르, 디프로필렌글리콜디에틸에테르, 디프로필렌글리콜에틸메틸에테르 등의 디프로필렌글리콜디알킬에테르류;(D-9) dipropylene glycol monoalkyl ethers such as dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monopropyl ether, and dipropylene glycol monobutyl ether; (Co) dipropylene glycol dialkyl ethers such as dipropylene glycol dimethyl ether, dipropylene glycol diethyl ether, and dipropylene glycol ethyl methyl ether;
(D-10)디프로필렌글리콜모노메틸에테르아세테이트, 디프로필렌글리콜모노에틸에테르아세테이트, 디프로필렌글리콜모노프로필에테르아세테이트, 디프로필렌글리콜모노부틸에테르아세테이트 등의 디프로필렌글리콜모노알킬에테르아세테이트류;(D-10) dipropylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether acetate, dipropylene glycol monopropyl ether acetate, dipropylene glycol monobutyl ether acetate, and other dipropylene glycol monoalkyl ether acetates;
(D-11)락트산 메틸, 락트산 에틸, 락트산 n-프로필, 락트산 이소프로필, 락트산 n-부틸, 락트산 이소부틸, 락트산 n-아밀, 락트산 이소아밀 등의 락트산 에스테르류;(D-11) lactic acid esters such as methyl lactate, ethyl lactate, n-propyl lactate, isopropyl lactate, n-butyl lactate, isobutyl lactate, n-amyl lactate and isoamyl lactate;
(D-12)아세트산 n-부틸, 아세트산 이소부틸, 아세트산 n-아밀, 아세트산 이소아밀, 아세트산 n-헥실, 아세트산 2-에틸헥실, 프로피온산 에틸, 프로피온산 n-프로필, 프로피온산 이소프로필, 프로피온산 n-부틸, 프로피온산 이소부틸, 부티르산 메틸, 부티르산 에틸, 부티르산 에틸, 부티르산 n-프로필, 부티르산 이소프로필, 부티르산 n-부틸, 부티르산 이소부틸 등의 지방족 카르복실산 에스테르류;(D-12) n-butyl acetate, isobutyl acetate, n-amyl acetate, isoamyl acetate, n-hexyl acetate, 2-ethylhexyl acetate, ethyl propionate, n-propyl propionate, isopropyl propionate, n-butyl propionate , Aliphatic carboxylic acid esters such as isobutyl propionate, methyl butyrate, ethyl butyrate, ethyl butyrate, n-propyl butyrate, isopropyl butyrate, n-butyl butyrate, and isobutyl butyrate;
(D-13)히드록시아세트산 에틸, 2-히드록시-2-메틸프로피온산 에틸, 2-히드록시-3-메틸부티르산 에틸, 메톡시아세트산 에틸, 에톡시아세트산 에틸, 3-메톡시프로피온산 메틸, 3-메톡시프로피온산 에틸, 3-에톡시프로피온산 메틸, 3-에톡시프로피온산 에틸, 3-메톡시부틸아세테이트, 3-메틸-3-메톡시부틸아세테이트, 3-메틸-3-메톡시부틸프로피오네이트, 3-메틸-3-메톡시부틸부틸레이트, 아세토아세트산 메틸, 아세토아세트산 에틸, 피루브산 메틸, 피루브산 에틸 등의 다른 에스테르류;(D-13) ethyl hydroxyacetate, ethyl 2-hydroxy-2-methylpropionate, ethyl 2-hydroxy-3-methylbutyrate, ethyl methoxyacetate, ethyl ethoxyacetate, methyl 3-methoxypropionate, 3 -Ethyl methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, 3-methyl-3-methoxybutylpropionate , Other esters such as 3-methyl-3-methoxybutylbutylate, methyl acetoacetate, ethyl acetoacetate, methyl pyruvate, ethyl pyruvate;
(D-14)메틸에틸케톤, 메틸프로필케톤, 메틸-n-부틸케톤, 메틸이소부틸케톤, 2-헵타논, 3-헵타논, 4-헵타논, 시클로헥사논 등의 케톤류;(D-14) ketones such as methyl ethyl ketone, methyl propyl ketone, methyl-n-butyl ketone, methyl isobutyl ketone, 2-heptanone, 3-heptanone, 4-heptanone and cyclohexanone;
(D-15)N-메틸포름아미드, N,N-디메틸포름아미드, N-메틸아세트아미드, N,N-디메틸아세트아미드, N-메틸피롤리돈 등의 아미드류;(D-15) amides such as N-methylformamide, N, N-dimethylformamide, N-methylacetamide, N, N-dimethylacetamide and N-methylpyrrolidone;
(D-16)γ-부틸로락톤 등의 락톤류 등을 들 수 있다.And lactones such as (D-16) γ-butylolactone.
또한, 이들의 용제에 또한 필요에 따라서 벤질에틸에테르, 디헥실에테르, 에틸렌글리콜모노페닐에테르아세테이트, 디에틸렌글리콜모노메틸에테르, 디에틸렌글리콜모노에틸에테르, 이소포론, 카프론산, 카프릴산, 1-옥타놀, 1-노날, 벤질알코올, 아니솔, 아세트산 벤질, 벤조산 에틸, 옥살산 디에틸, 말레산 디에틸, 탄산 에틸렌, 탄산 프로필렌 등의 용제를 첨가할 수도 있다. 이들 용제는 1종 단독으로 또는 2종 이상을 혼합해서 사용할 수 있다. 본 발명에 사용할 수 있는 용제는 1종 단독, 또는 2종을 병용하는 것이 바람직하고, 2종을 병용하는 것이 보다 바람직하고, 프로필렌글리콜모노알킬에테르아세테이트류와 디에틸렌글리콜디알킬에테르류를 병용하는 것이 더욱 바람직하다.In addition, benzyl ethyl ether, dihexyl ether, ethylene glycol monophenyl ether acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, isophorone, caproic acid, caprylic acid, 1, if necessary also for these solvents. -Solvents such as octanol, 1-nonal, benzyl alcohol, anisole, benzyl acetate, ethyl benzoate, diethyl oxalate, diethyl maleate, ethylene carbonate, and propylene carbonate may also be added. These solvents can be used alone or in combination of two or more. The solvent which can be used in the present invention is preferably one type or a combination of two types, more preferably two types, and propylene glycol monoalkyl ether acetates and diethylene glycol dialkyl ethers are used in combination. It is more preferable.
본 발명의 감광성 수지 조성물에 있어서의 (D) 용제의 함유량은 수지성분 100중량부당 50∼3,000중량부인 것이 바람직하고, 100∼2,000중량부인 것이 보다 바람직하고, 150∼1,500중량부인 것이 더욱 바람직하다.The content of the (D) solvent in the photosensitive resin composition of the present invention is preferably 50 to 3,000 parts by weight per 100 parts by weight of the resin component, more preferably 100 to 2,000 parts by weight, and even more preferably 150 to 1,500 parts by weight.
본 발명의 포지티브형 감광성 수지 조성물에는 상기 성분에 추가해서 가교제, 밀착 개량제, 염기성 화합물, 계면활성제, 가소제, 및 열 라디칼 발생제, 산화 방지제, 및, 열산발생제, 자외선 흡수제, 증점제, 및 유기 또는 무기의 침전 방지제 등의 공지의 첨가제를 첨가할 수 있다.In the positive photosensitive resin composition of the present invention, in addition to the above components, a crosslinking agent, adhesion improving agent, basic compound, surfactant, plasticizer, and thermal radical generator, antioxidant, and thermal acid generator, UV absorber, thickener, and organic or Known additives, such as inorganic precipitation inhibitors, can be added.
<(E)밀착 개량제><(E) Adherence improving agent>
본 발명의 감광성 수지 조성물은 (E)밀착 개량제를 함유해도 좋다. 본 발명의 감광성 수지 조성물에 사용할 수 있는 (E)밀착 개량제는 기재가 되는 무기물, 예를 들면, 실리콘, 산화 실리콘, 질화 실리콘 등의 실리콘 화합물, 금, 구리, 알루미늄 등의 금속과 절연막의 밀착성을 향상시키는 화합물이다. 구체적으로는 실란 커플링제, 티올계 화합물 등을 들 수 있다. 본 발명에서 사용되는 (E)밀착 개량제로서의 실란 커플링제는 계면의 개질을 목적으로 하는 것이며, 특별히 한정되지 않고 공지의 것을 사용할 수 있다.The photosensitive resin composition of this invention may contain (E) adhesion improver. (E) Adhesion improvers that can be used in the photosensitive resin composition of the present invention provide adhesion between an inorganic substance serving as a base material, for example, silicon compounds such as silicon, silicon oxide, and silicon nitride, metals such as gold, copper, and aluminum, and insulating films. It is a compound to improve. Specifically, a silane coupling agent, a thiol type compound, etc. are mentioned. The silane coupling agent used as the (E) adhesion improving agent used in the present invention is for the purpose of modifying the interface, and is not particularly limited and a known one can be used.
바람직한 실란 커플링제로서는 예를 들면, γ-아미노프로필트리메톡시실란, γ-아미노프로필트리에톡시실란, γ-글리시독시프로필트리알콕시실란, γ-글리시독시프로필디알콕시실란, γ-메타크릴옥시프로필트리알콕시실란, γ-메타크릴옥시프로필디알콕시실란, γ-클로로프로필트리알콕시실란, γ-메르캅토프로필트리알콕시실란, β-(3,4-에폭시시클로헥실)에틸트리알콕시실란, 비닐트리알콕시실란을 들 수 있다. 이들 중 γ-글리시독시프로필트리알콕시실란이나 γ-메타크릴옥시프로필트리알콕시실란이 보다 바람직하고, γ-글리시독시프로필트리알콕시실란이 더욱 바람직하다. 이들은 1종 단독 또는 2종 이상을 조합시켜서 사용할 수 있다. 이들은 기판과의 밀착성의 향상에 유효함과 아울러 기판과의 테이퍼각의 조정에도 유효하다.Preferred silane coupling agents include, for example, γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-glycidoxypropyltrialkoxysilane, γ-glycidoxypropyldialkoxysilane, and γ-meta Krilloxypropyltrialkoxysilane, γ-methacryloxypropyldialkoxysilane, γ-chloropropyltrialkoxysilane, γ-mercaptopropyltrialkoxysilane, β- (3,4-epoxycyclohexyl) ethyl trialkoxysilane, And vinyl trialkoxysilane. Among these, γ-glycidoxypropyl trialkoxysilane or γ-methacryloxypropyl trialkoxysilane is more preferable, and γ-glycidoxypropyl trialkoxysilane is more preferable. These may be used alone or in combination of two or more. These are effective not only for improving the adhesion to the substrate but also for adjusting the taper angle with the substrate.
본 발명의 감광성 수지 조성물에 있어서의 (E)밀착 개량제의 함유량은 수지성분 100중량부에 대해서 0.1∼20중량부가 바람직하고, 0.5∼10중량부가 보다 바람직하다.The content of the adhesion improving agent (E) in the photosensitive resin composition of the present invention is preferably 0.1 to 20 parts by weight, more preferably 0.5 to 10 parts by weight with respect to 100 parts by weight of the resin component.
<(G)염기성 화합물><(G) basic compound>
본 발명의 감광성 수지 조성물은 (G)염기성 화합물을 함유해도 좋다. (G)염기성 화합물로서는 화학 증폭 레지스트에서 사용되는 것 중에서 임의로 선택해서 사용할 수 있다. 예를 들면, 지방족 아민, 방향족 아민, 복소환식 아민, 제4급 암모늄히드록시드, 카르복실산의 제4급 암모늄염 등을 들 수 있다. The photosensitive resin composition of this invention may contain (G) basic compound. (G) As a basic compound, it can be used selecting arbitrarily from what is used by chemically amplified resist. Examples thereof include aliphatic amines, aromatic amines, heterocyclic amines, quaternary ammonium hydroxides, quaternary ammonium salts of carboxylic acids, and the like.
지방족 아민으로서는 예를 들면, 트리메틸아민, 디에틸아민, 트리에틸아민, 디-n-프로필아민, 트리-n-프로필아민, 디-n-펜틸아민, 트리-n-펜틸아민, 디에탄올아민, 트리에탄올아민, 디시클로헥실아민, 디시클로헥실메틸아민 등을 들 수 있다.Examples of the aliphatic amines include trimethylamine, diethylamine, triethylamine, di-n-propylamine, tri-n-propylamine, di-n-pentylamine, tri-n-pentylamine, diethanolamine, And triethanolamine, dicyclohexylamine, and dicyclohexylmethylamine.
방향족 아민으로서는 예를 들면, 아닐린, 벤질아민, N,N-디메틸아닐린, 디페닐아민 등을 들 수 있다.Examples of aromatic amines include aniline, benzylamine, N, N-dimethylaniline, and diphenylamine.
복소환식 아민으로서는 예를 들면, 피리딘, 2-메틸피리딘, 4-메틸피리딘, 2-에틸피리딘, 4-에틸피리딘, 2-페닐피리딘, 4-페닐피리딘, N-메틸-4-페닐피리딘, 4-디메틸아미노피리딘, 이미다졸, 벤즈이미다졸, 4-메틸이미다졸, 2-페닐벤즈이미다졸, 2,4,5-트리페닐이미다졸, 니코틴, 니코틴산, 니코틴산 아미드, 퀴놀린, 8-옥시 퀴놀린, 피라진, 피라졸, 피리다진, 푸린, 피롤리딘, 피페리딘, 피페라진, 모르폴린, 4-메틸모르폴린, 1,5-디아자비시클로[4.3.0]-5-노넨, 1,8-디아자비시클로[5.3.0]-7-운데센 등을 들 수 있다.As the heterocyclic amine, for example, pyridine, 2-methylpyridine, 4-methylpyridine, 2-ethylpyridine, 4-ethylpyridine, 2-phenylpyridine, 4-phenylpyridine, N-methyl-4-phenylpyridine, 4 -Dimethylaminopyridine, imidazole, benzimidazole, 4-methylimidazole, 2-phenylbenzimidazole, 2,4,5-triphenylimidazole, nicotine, nicotinic acid, nicotinic acid amide, quinoline, 8-oxy Quinoline, pyrazine, pyrazole, pyridazine, purine, pyrrolidine, piperidine, piperazine, morpholine, 4-methylmorpholine, 1,5-diazabicyclo [4.3.0] -5-nonene, 1 And 8-diazabicyclo [5.3.0] -7-undecene.
제4급 암모늄히드록시드로서는 예를 들면, 테트라메틸암모늄히드록시드, 테트라에틸암모늄히드록시드, 테트라-n-부틸암모늄히드록시드, 테트라-n-헥실암모늄히드록시드 등을 들 수 있다.Examples of the quaternary ammonium hydroxide include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetra-n-butylammonium hydroxide, and tetra-n-hexylammonium hydroxide. .
카르복실산의 제4급 암모늄염으로서는 예를 들면, 테트라메틸암모늄아세테이트, 테트라메틸암모늄벤조에이트, 테트라-n-부틸암모늄아세테이트, 테트라-n-부틸암모늄벤조에이트 등을 들 수 있다.As a quaternary ammonium salt of a carboxylic acid, tetramethylammonium acetate, tetramethylammonium benzoate, tetra-n-butylammonium acetate, tetra-n-butylammonium benzoate, etc. are mentioned, for example.
본 발명에 사용할 수 있는 염기성 화합물은 1종 단독으로 사용해도, 2종 이상을 병용해도 좋지만, 2종 이상을 병용하는 것이 바람직하고, 2종을 병용하는 것이 보다 바람직하고, 복소환식 아민을 2종 병용하는 것이 더욱 바람직하다.The basic compound that can be used in the present invention may be used singly or in combination of two or more kinds, but two or more kinds are preferably used in combination, more preferably two kinds in combination, and two kinds of heterocyclic amines. It is more preferable to use together.
본 발명의 감광성 수지 조성물에 있어서의 (G)염기성 화합물의 함유량은 수지성분 100중량부에 대해서 0.001∼1중량부인 것이 바람직하고, 0.005∼0.2중량부인 것이 보다 바람직하다.The content of the basic compound (G) in the photosensitive resin composition of the present invention is preferably 0.001 to 1 part by weight, more preferably 0.005 to 0.2 part by weight with respect to 100 parts by weight of the resin component.
<(H)계면활성제><(H) surfactant>
본 발명의 감광성 수지 조성물은 (H)계면활성제를 함유해도 좋다. (H)계면활성제로서는 음이온계, 양이온계, 비이온계, 또는 양성 중 어느 것이라도 사용할 수 있지만, 바람직한 계면활성제는 비이온계 계면활성제이다.The photosensitive resin composition of this invention may contain (H) surfactant. (H) As the surfactant, any of anionic, cationic, nonionic, or amphoteric surfactants can be used, but preferred surfactants are nonionic surfactants.
비이온계 계면활성제의 예로서는 폴리옥시에틸렌 고급 알킬에테르류, 폴리옥시에틸렌 고급 알킬페닐에테르류, 폴리옥시에틸렌글리콜의 고급지방산 디에스테르류, 실리콘계, 불소계 계면활성제를 들 수 있다. 또한, 이하 상품명으로 KP(신에츠 카가쿠 고교(주)제), 폴리플로우(교에이샤 카가쿠(주)제), 에프톱(JEMCO사제), 메가팩(DIC(주)제), 플로라드(스미토모 스리엠(주)제), 아사히 가드, 서프론(아사히 가라스(주)제), PolyFox(OMNOVA사제) 등의 각 시리즈를 들 수 있다.Examples of the nonionic surfactant include polyoxyethylene higher alkyl ethers, polyoxyethylene higher alkylphenyl ethers, higher fatty acid diesters of polyoxyethylene glycol, silicone-based and fluorine-based surfactants. In addition, the following product names are KP (made by Shin-Etsu Chemical Co., Ltd.), polyflow (made by Kyoeisha Kagaku Co., Ltd.), F-top (manufactured by JEMCO), Megapack (manufactured by DIC Co., Ltd.), Florad (Sumitomo 3M Co., Ltd.), Asahi Guard, Surfon (Asahi Garas Co., Ltd.), PolyFox (manufactured by OMNOVA) and the like.
또한, 계면활성제로서 하기 식(1)으로 나타내어지는 구조단위A 및 구조단위B를 포함하고, 테트라히드로푸란(THF)을 용매로 한 경우의 겔퍼미에이션 크로마토그래피로 측정되는 폴리스티렌 환산의 중량 평균 분자량(Mw)이 1,000 이상 10,000 이하인 공중합체를 바람직한 예로서 들 수 있다.Moreover, the weight average molecular weight of polystyrene conversion measured by gel permeation chromatography, which includes structural unit A and structural unit B represented by the following formula (1) as a surfactant and using tetrahydrofuran (THF) as a solvent. A copolymer having (Mw) of 1,000 to 10,000 is exemplified as a preferred example.
(식(1) 중, R1 및 R3은 각각 독립적으로 수소원자 또는 메틸기를 나타내고, R2는 탄소수 1 이상 4 이하의 직쇄 알킬렌기를 나타내고, R4는 수소원자 또는 탄소수 1 이상 4 이하의 알킬기를 나타내고, L은 탄소수 3 이상 6 이하의 알킬렌기를 나타내고, p 및 q는 중합비를 나타내는 중량 백분률이며, p는 10중량% 이상 80중량% 이하의 수치를 나타내고, q는 20중량% 이상 90중량% 이하의 수치를 나타내고, r은 1 이상 18 이하의 정수를 나타내고, n은 1 이상 10 이하의 정수를 나타낸다)(In formula (1), R 1 and R 3 each independently represent a hydrogen atom or a methyl group, R 2 represents a straight-chain alkylene group having 1 to 4 carbon atoms, and R 4 is a hydrogen atom or 1 to 4 carbon atoms) Represents an alkyl group, L represents an alkylene group having 3 to 6 carbon atoms, p and q are weight percentages representing a polymerization ratio, p represents a value of 10% by weight or more and 80% by weight or less, and q is 20% by weight More than 90% by weight, r represents an integer of 1 to 18, and n represents an integer of 1 to 10)
상기 L은 하기 식(2)으로 나타내어지는 분기 알킬렌기인 것이 바람직하다. 식(2)에 있어서의 R5는 탄소수 1 이상 4 이하의 알킬기를 나타내고, 상용성과 피도포면에 대한 젖음성의 점에서 탄소수 1 이상 3 이하의 알킬기가 바람직하고, 탄소수 2 또는 3의 알킬기가 보다 바람직하다. p와 q의 합(p+q)은 p+q=100, 즉, 100중량%인 것이 바람직하다.It is preferable that L is a branched alkylene group represented by the following formula (2). R 5 in the formula (2) represents an alkyl group having 1 to 4 carbon atoms, preferably an alkyl group having 1 to 3 carbon atoms in terms of compatibility and wettability to the surface to be coated, and more preferably an alkyl group having 2 or 3 carbon atoms. Do. The sum of p and q (p + q) is preferably p + q = 100, that is, 100% by weight.
상기 공중합체의 중량 평균 분자량(Mw)은 1,500 이상 5,000 이하가 보다 바람직하다.The weight average molecular weight (Mw) of the copolymer is more preferably 1,500 or more and 5,000 or less.
이들 계면활성제는 1종 단독으로 또는 2종 이상을 혼합해서 사용할 수 있다.These surfactants can be used alone or in combination of two or more.
본 발명의 감광성 수지 조성물에 있어서의 (H)계면활성제의 첨가량은 수지성분 100중량부에 대해서 10중량부 이하인 것이 바람직하고, 0.01∼10중량부인 것이 보다 바람직하고, 0.01∼1중량부인 것이 더욱 바람직하다.The addition amount of the (H) surfactant in the photosensitive resin composition of the present invention is preferably 10 parts by weight or less, more preferably 0.01 to 10 parts by weight, and even more preferably 0.01 to 1 part by weight with respect to 100 parts by weight of the resin component. Do.
<(I)가소제><(I) Plasticizer>
본 발명의 감광성 수지 조성물은 (I)가소제를 함유해도 좋다. (I)가소제로서는 예를 들면, 디부틸프탈레이트, 디옥틸프탈레이트, 디도데실프탈레이트, 폴리에틸렌글리콜, 글리세린, 디메틸글리세린프탈레이트, 주석산 디부틸, 아디프산 디옥틸, 트리아세틸글리세린 등을 들 수 있다.The photosensitive resin composition of this invention may contain (I) plasticizer. Examples of the plasticizer (I) include dibutyl phthalate, dioctyl phthalate, didodecyl phthalate, polyethylene glycol, glycerin, dimethylglycerin phthalate, dibutyl stannate, dioctyl adipic acid, and triacetylglycerin.
본 발명의 감광성 수지 조성물에 있어서의 (I)가소제의 첨가량은 수지성분 100중량부에 대해서 0.1∼30중량부인 것이 바람직하고, 1∼10중량부인 것이 보다 바람직하다. The addition amount of the plasticizer (I) in the photosensitive resin composition of the present invention is preferably 0.1 to 30 parts by weight, more preferably 1 to 10 parts by weight with respect to 100 parts by weight of the resin component.
<(J)열 라디칼 발생제><(J) Thermal radical generator>
본 발명의 감광성 수지 조성물은 (J)열 라디칼 발생제를 포함하고 있어도 좋고, 상술한 적어도 1개의 에틸렌성 불포화 이중 결합을 갖는 화합물과 같은 에틸렌성 불포화 화합물을 함유할 경우, (J)열 라디칼 발생제를 함유하는 것이 바람직하다. 본 발명에 있어서의 열 라디칼 발생제로서는 공지의 열 라디칼 발생제를 사용할 수 있다.The photosensitive resin composition of the present invention may include (J) a thermal radical generator, and when it contains an ethylenically unsaturated compound such as a compound having at least one ethylenically unsaturated double bond described above, (J) thermal radical generation It is preferred to contain the agent. As the thermal radical generator in the present invention, a known thermal radical generator can be used.
열 라디칼 발생제는 열에너지에 의해 라디칼을 발생하고, 중합성 화합물의 중합 반응을 개시 또는 촉진시키는 화합물이다. 열 라디칼 발생제를 첨가함으로써, 얻어진 경화막이 보다 강인해져 내열성, 내용제성이 향상되는 경우가 있다.Thermal radical generators are compounds that generate radicals by thermal energy and initiate or accelerate the polymerization reaction of the polymerizable compound. By adding a thermal radical generator, the obtained cured film may be more robust, and heat resistance and solvent resistance may be improved.
바람직한 열 라디칼 발생제로서는 방향족 케톤류, 오늄염 화합물, 유기 과산화물, 티오 화합물, 헥사아릴비이미다졸 화합물, 케토옥심에스테르 화합물, 보레이트 화합물, 아지늄 화합물, 메탈로센 화합물, 활성 에스테르 화합물, 탄소 할로겐 결합을 갖는 화합물, 아조계 화합물, 비벤질 화합물 등을 들 수 있다. (J)열 라디칼 발생제는 1종을 단독으로 사용해도 좋고, 2종 이상을 병용하는 것도 가능하다.Preferred thermal radical generators include aromatic ketones, onium salt compounds, organic peroxides, thio compounds, hexaarylbiimidazole compounds, ketooxime ester compounds, borate compounds, azinium compounds, metallocene compounds, active ester compounds, carbon halogen bonds And compounds having, azo-based compounds, and non-benzyl compounds. (J) The thermal radical generator may be used alone or in combination of two or more.
본 발명의 감광성 수지 조성물에 있어서의 (J)열 라디칼 발생제의 첨가량은 막물성 향상의 관점에서 (A)중합체를 100중량부로 했을 때 0.01∼50중량부가 바람직하고, 0.1∼20중량부가 보다 바람직하고, 0.5∼10중량부인 것이 가장 바람직하다. The addition amount of the thermal radical generator (J) in the photosensitive resin composition of the present invention is preferably from 0.01 to 50 parts by weight, and more preferably from 0.1 to 20 parts by weight, when the polymer (A) is 100 parts by weight from the viewpoint of improving film properties. And most preferably 0.5 to 10 parts by weight.
<(K)산화 방지제><(K) antioxidant>
본 발명의 감광성 수지 조성물은 (K)산화 방지제를 함유해도 좋다. (K)산화 방지제로서는 공지의 산화 방지제를 함유할 수 있다. (K)산화 방지제를 첨가함으로써 경화막의 착색을 방지할 수 있거나 또는 분해에 의한 막두께 감소를 저감할 수 있고, 또한, 내열 투명성이 우수하다는 이점이 있다.The photosensitive resin composition of this invention may contain (K) antioxidant. (K) As an antioxidant, a well-known antioxidant can be contained. (K) By adding an antioxidant, coloring of the cured film can be prevented, or a decrease in film thickness due to decomposition can be reduced, and there is an advantage of excellent heat resistance and transparency.
이러한 산화 방지제로서는 예를 들면, 인계 산화 방지제, 히드라지드류, 힌다드아민계 산화 방지제, 유황계 산화 방지제, 페놀계 산화 방지제, 아스코르브산류, 황산 아연, 당류, 아질산염, 아황산염, 티오황산염, 히드록실아민 유도체 등을 들 수 있다. 이들 중에서는 경화막의 착색, 막두께 감소의 관점에서 특히 페놀계 산화 방지제가 바람직하다. 이들은 1종 단독으로 사용해도 좋고, 2종 이상을 혼합해서 사용해도 좋다.Examples of such antioxidants include phosphorus-based antioxidants, hydrazides, hindered amine-based antioxidants, sulfur-based antioxidants, phenol-based antioxidants, ascorbic acid, zinc sulfate, sugars, nitrites, sulfites, thiosulfate, hydroxyl And amine derivatives. Among these, a phenolic antioxidant is particularly preferred from the viewpoint of coloring the cured film and reducing film thickness. These may be used alone or in combination of two or more.
페놀계 산화 방지제의 시판품으로서는 예를 들면, 아데카스타브 AO-60, 아데카스타브 AO-80(이상, (주)ADEKA제), 이르가녹스 1098(치바재팬(주)제)을 들 수 있다.Commercial products of phenolic antioxidants include, for example, Adekastab AO-60, Adekastab AO-80 (above, manufactured by ADEKA Corporation), and Irganox 1098 (manufactured by Chiba Japan Corporation). .
(K)산화 방지제의 함유량은 감광성 수지 조성물의 전체 고형분에 대해서 0.1∼6질량%인 것이 바람직하고, 0.2∼5질량%인 것이 보다 바람직하고, 0.5∼4질량%인 것이 특히 바람직하다. 이 범위로 함으로써 형성된 막의 충분한 투명성이 얻어지고, 또한, 패턴 형성시의 감도도 양호하게 된다.The content of the (K) antioxidant is preferably 0.1 to 6% by mass, more preferably 0.2 to 5% by mass, and particularly preferably 0.5 to 4% by mass, based on the total solid content of the photosensitive resin composition. By setting it as this range, sufficient transparency of the formed film is obtained and also the sensitivity at the time of pattern formation is favorable.
또한, 산화 방지제 이외의 첨가제로서, "고분자 첨가제의 신전개((주)닛간 고교 신문사)"에 기재된 각종 자외선 흡수제나, 금속 불활성화제 등을 본 발명의 감광성 수지 조성물에 첨가해도 좋다.Further, as the additives other than the antioxidant, various ultraviolet absorbers, metal deactivators, and the like described in "Advanced Polymer Additives (Nigan Kogyo Newspaper Co., Ltd.)" may be added to the photosensitive resin composition of the present invention.
<(L)가교제><(L) crosslinking system>
본 발명의 감광성 수지 조성물은 필요에 따라 가교제(L)를 함유하는 것이 바람직하다. 가교제(L)로서는 예를 들면, 이하에 서술하는 분자내에 2개 이상의 에폭시기 또는 옥세타닐기를 갖는 화합물, 알콕시메틸기 함유 가교제, 적어도 1개의 에틸렌성 불포화 이중 결합을 갖는 화합물을 첨가할 수 있다. 가교제(L)를 첨가함으로써 경화막을 보다 강고한 막으로 할 수 있다. 가교제로서는 이하의 것을 첨가할 수 있다.It is preferable that the photosensitive resin composition of this invention contains a crosslinking agent (L) as needed. As the crosslinking agent (L), for example, a compound having two or more epoxy groups or oxetanyl groups, a alkoxymethyl group-containing crosslinking agent, and a compound having at least one ethylenically unsaturated double bond can be added to the molecule described below. A cured film can be made into a more robust film by adding a crosslinking agent (L). The following can be added as a crosslinking agent.
<분자내에 2개 이상의 에폭시기를 갖는 화합물><A compound having two or more epoxy groups in a molecule>
분자내에 2개 이상의 에폭시기를 갖는 화합물의 구체예로서는 비스페놀A형 에폭시 수지, 비스페놀F형 에폭시 수지, 페놀노볼락형 에폭시 수지, 크레졸 노볼락형 에폭시 수지, 지방족 에폭시 수지 등을 들 수 있다.Specific examples of the compound having two or more epoxy groups in the molecule include bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, and aliphatic epoxy resin.
이들은 시판품으로서 입수할 수 있다. 예를 들면, 비스페놀A형 에폭시 수지로서는 JER827, JER828, JER834, JER1001, JER1002, JER1003, JER1055, JER1007, JER1009, JER1010(이상, 재팬 에폭시레진(주)제), EPICLON860, EPICLON1050, EPICLON1051, EPICLON1055(이상, DIC(주)제) 등이, 비스페놀F형 에폭시 수지로서는 JER806, JER807, JER4004, JER4005, JER4007, JER4010(이상, 재팬 에폭시레진(주)제), EPICLON830, EPICLON835(이상, DIC(주)제), LCE-21, RE-602S(이상, 니폰 카야쿠(주)제) 등이, 페놀노볼락형 에폭시 수지로서는 JER152, JER154, JER157S65, JER157S70(이상, 재팬 에폭시레진(주)제), EPICLON N-740, EPICLON N-740, EPICLON N-770, EPICLON N-775(이상, DIC(주)제) 등이, 크레졸 노볼락형 에폭시 수지로서는 EPICLON N-660, EPICLON N-665, EPICLON N-670, EPICLON N-673, EPICLON N-680, EPICLON N-690, EPICLON N-695(이상, DIC(주)제), EOCN-1020(이상, 니폰 카야쿠(주)제) 등이, 지방족 에폭시 수지로서는 ADEKA RESIN EP-4080S, 동 EP-4085S, 동 EP-4088S(이상, (주)ADEKA제), 셀록사이드 2021P, 셀록사이드 2081, 셀록사이드 2083, 셀록사이드 2085, EHPE3150, EPOLEAD PB 3600, 동 PB 4700(이상, 다이셀 카가쿠 고교(주)제) 등을 들 수 있다. 그 밖에도, ADEKA RESIN EP-4000S, 동 EP-4003S, 동 EP-4010S, 동 EP-4011S(이상, (주)ADEKA제), NC-2000, NC-3000, NC-7300, XD-1000, EPPN-501, EPPN-502(이상, (주)ADEKA제) 등을 들 수 있다. 이들은 1종 단독 또는 2종 이상을 조합시켜서 사용할 수 있다.These can be obtained as a commercial item. For example, as the bisphenol A type epoxy resin, JER827, JER828, JER834, JER1001, JER1002, JER1003, JER1055, JER1007, JER1009, JER1010 (above, manufactured by Japan Epoxy Resin Co., Ltd.), EPICLON860, EPICLON1050, EPICLON1051, EPICLON1055 , DIC Corporation), etc., as bisphenol F-type epoxy resins JER806, JER807, JER4004, JER4005, JER4007, JER4010 (above, manufactured by Japan Epoxy Resin Co., Ltd.), EPICLON830, EPICLON835 (above, manufactured by DIC Corporation) ), LCE-21, RE-602S (above, manufactured by Nippon Kayaku Co., Ltd.) are phenol novolac-type epoxy resins such as JER152, JER154, JER157S65, JER157S70 (above, manufactured by Japan Epoxy Resin Co., Ltd.), EPICLON N-740, EPICLON N-740, EPICLON N-770, and EPICLON N-775 (above, manufactured by DIC Corporation) are examples of cresol novolac-type epoxy resins such as EPICLON N-660, EPICLON N-665, EPICLON N- 670, EPICLON N-673, EPICLON N-680, EPICLON N-690, EPICLON N-695 (above, manufactured by DIC Corporation), EOCN-1020 (above, manufactured by Nippon Kayaku Co., Ltd.), aliphatic epoxy As resin, ADEKA RESIN EP-4080S, EP-4085S, Copper EP-4088S (above, manufactured by ADEKA Corporation), Celloxide 2021P, Celloxide 2081, Celloxide 2083, Celloxide 2085, EHPE3150, EPOLEAD PB 3600, Copper PB 4700 (above, Daicel Kagaku High School Co., Ltd.) etc. are mentioned. In addition, ADEKA RESIN EP-4000S, copper EP-4003S, copper EP-4010S, copper EP-4011S (above, manufactured by ADEKA Corporation), NC-2000, NC-3000, NC-7300, XD-1000, EPPN And -501, EPPN-502 (above, manufactured by Adeka Corporation). These may be used alone or in combination of two or more.
이들 중에서 바람직한 것으로서는 비스페놀A형 에폭시 수지, 비스페놀F형 에폭시 수지, 지방족 에폭시 수지, 페놀노볼락형 에폭시 수지, 크레졸 노볼락형 에폭시 수지를 들 수 있다. 특히 비스페놀A형 에폭시 수지, 페놀노볼락형 에폭시 수지, 지방족 에폭시 수지가 바람직하다.Among them, bisphenol A-type epoxy resins, bisphenol F-type epoxy resins, aliphatic epoxy resins, phenol novolac-type epoxy resins, and cresol novolac-type epoxy resins are preferred. In particular, bisphenol A type epoxy resin, phenol novolak type epoxy resin, and aliphatic epoxy resin are preferred.
<분자내에 2개 이상의 옥세타닐기를 갖는 화합물><A compound having two or more oxetanyl groups in the molecule>
분자내에 2개 이상의 옥세타닐기를 갖는 화합물의 구체예로서 OXT-121, OXT-221, OX-SQ, PNOX(이상, 도아 고세이(주)제)를 사용할 수 있다. As a specific example of a compound having two or more oxetanyl groups in the molecule, OXT-121, OXT-221, OX-SQ, and PNOX (above, manufactured by Toagosei Co., Ltd.) can be used.
에폭시기 또는 옥세타닐기를 갖는 화합물의 감광성 수지 조성물에의 첨가량은 수지성분의 총량을 100중량부로 했을 때 1∼50중량부가 바람직하고, 3∼30중량부가 보다 바람직하다.The addition amount of the compound having an epoxy group or an oxetanyl group to the photosensitive resin composition is preferably 1 to 50 parts by weight, more preferably 3 to 30 parts by weight when the total amount of the resin component is 100 parts by weight.
<알콕시메틸기 함유 가교제><Alkoxymethyl group-containing crosslinking agent>
알콕시메틸기 함유 가교제로서는 알콕시메틸화 멜라민, 알콕시메틸화 벤조구아나민, 알콕시메틸화 글리콜우릴 및 알콕시메틸화 요소 등이 바람직하다. 이들은 각각 메티롤화 멜라민, 메티롤화 벤조구아나민, 메티롤화 글리콜우릴, 또는 메티롤화 요소의 메티롤기를 알콕시메틸기로 변환함으로써 얻어진다. 이 알콕시메틸기의 종류에 대해서는 특별히 한정되는 것은 아니고, 예를 들면, 메톡시메틸기, 에톡시 메틸기, 프로폭시메틸기, 부톡시메틸기 등을 들 수 있지만, 아웃 가스의 발생량의 관점에서 특히 메톡시메틸기가 바람직하다. 이들 가교성 화합물 중 알콕시메틸화 멜라민, 알콕시메틸화 벤조구아나민, 알콕시메틸화 글리콜우릴을 바람직한 가교성 화합물로서 들 수 있고, 투명성의 관점에서 알콕시메틸화 글리콜우릴이 특히 바람직하다.As the alkoxymethyl group-containing crosslinking agent, alkoxymethylated melamine, alkoxymethylated benzoguanamine, alkoxymethylated glycoluril, and alkoxymethylated urea are preferable. These are each obtained by converting the methylol group of methirolated melamine, methirolated benzoguanamine, metilylated glycoluril, or methirolated urea to an alkoxymethyl group. The type of the alkoxymethyl group is not particularly limited, and examples thereof include a methoxymethyl group, an ethoxy methyl group, a propoxymethyl group, and a butoxymethyl group. desirable. Among these crosslinkable compounds, alkoxymethylated melamine, alkoxymethylated benzoguanamine, and alkoxymethylated glycoluril are mentioned as preferred crosslinkable compounds, and alkoxymethylated glycoluril is particularly preferred from the viewpoint of transparency.
이들 알콕시메틸기 함유 가교제는 시판품으로서 입수 가능하며, 예를 들면, 사이멜 300, 301, 303, 370, 325, 327, 701, 266, 267, 238, 1141, 272, 202, 1156, 1158, 1123, 1170, 1174, UFR65, 300(이상, 미츠이 사이아나미드(주)제), 니카락 MX-750, -032, -706, -708, -40, -31, -270, -280, -290, 니카락 MS-11, 니카락 MW-30HM, -100LM, -390(이상, (주)산와 케미컬제) 등을 바람직하게 사용할 수 있다.These alkoxymethyl group-containing crosslinking agents are available as commercial products, for example, Cymel 300, 301, 303, 370, 325, 327, 701, 266, 267, 238, 1141, 272, 202, 1156, 1158, 1123, 1170, 1174, UFR65, 300 (above, manufactured by Mitsui Cyanamide Co., Ltd.), Nikarac MX-750, -032, -706, -708, -40, -31, -270, -280, -290, Nikarac MS-11, Nikarac MW-30HM, -100LM, -390 (above, manufactured by Sanwa Chemical Co., Ltd.) and the like can be preferably used.
본 발명의 감광성 수지 조성물에 알콕시메틸기 함유 가교제를 사용할 경우의 알콕시메틸기 함유 가교제의 첨가량은 수지성분 100중량부에 대해서 0.05∼50중량부인 것이 바람직하고, 0.5∼10중량부인 것이 보다 바람직하다. 이 범위에서 첨가 함으로써 현상시의 바람직한 알칼리 용해성과, 경화후의 막이 우수한 내용제성이 얻어진다.When the alkoxymethyl group-containing crosslinking agent is used in the photosensitive resin composition of the present invention, the addition amount of the alkoxymethyl group-containing crosslinking agent is preferably 0.05 to 50 parts by weight, more preferably 0.5 to 10 parts by weight based on 100 parts by weight of the resin component. By adding in this range, preferable alkali solubility at the time of development and excellent solvent resistance of the film after curing are obtained.
<적어도 1개의 에틸렌성 불포화 이중 결합을 갖는 화합물><A compound having at least one ethylenically unsaturated double bond>
적어도 1개의 에틸렌성 불포화 이중 결합을 갖는 화합물로서는 단관능 (메타)아크릴레이트, 2관능 (메타)아크릴레이트, 3관능 이상의 (메타)아크릴레이트 등의 (메타)아크릴레이트 화합물을 바람직하게 사용할 수 있다.As the compound having at least one ethylenically unsaturated double bond, a (meth) acrylate compound such as a monofunctional (meth) acrylate, bifunctional (meth) acrylate, or trifunctional or higher (meth) acrylate can be preferably used. .
단관능 (메타)아크릴레이트로서는 예를 들면, 2-히드록시에틸(메타)아크릴레이트, 카르비톨(메타)아크릴레이트, 이소보로닐(메타)아크릴레이트, 3-메톡시부틸(메타)아크릴레이트, 2-(메타)아크릴로일옥시에틸-2-히드록시프로필프탈레이트 등을 들 수 있다.As monofunctional (meth) acrylate, for example, 2-hydroxyethyl (meth) acrylate, carbitol (meth) acrylate, isoboronil (meth) acrylate, 3-methoxybutyl (meth) acrylic Rate, 2- (meth) acryloyloxyethyl-2-hydroxypropylphthalate, and the like.
2관능 (메타)아크릴레이트로서는 예를 들면, 에틸렌글리콜(메타)아크릴레이트, 1,6-헥산디올디(메타)아크릴레이트, 1,9-노난디올디(메타)아크릴레이트, 폴리프로필렌글리콜디(메타)아크릴레이트, 테트라에틸렌글리콜디(메타)아크릴레이트, 비스페녹시에탄올플루오렌디아크릴레이트, 비스페녹시에탄올플루오렌디아크릴레이트 등을 들 수 있다.As the bifunctional (meth) acrylate, for example, ethylene glycol (meth) acrylate, 1,6-hexanedioldi (meth) acrylate, 1,9-nonanedioldi (meth) acrylate, polypropylene glycoldi (Meth) acrylate, tetraethylene glycol di (meth) acrylate, bisphenoxyethanol fluorene diacrylate, bisphenoxyethanol fluorene diacrylate, and the like.
3관능 이상의 (메타)아크릴레이트로서는 예를 들면 트리메티롤프로판트리(메타)아크릴레이트, 펜타에리스리톨트리(메타)아크릴레이트, 트리((메타)아크릴로일옥시에틸)포스페이트, 펜타에리스리톨테트라(메타)아크릴레이트, 디펜타에리스리톨펜타(메타)아크릴레이트, 디펜타에리스리톨헥사(메타)아크릴레이트 등을 들 수 있다.As trifunctional or higher (meth) acrylates, for example, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, tri ((meth) acryloyloxyethyl) phosphate, pentaerythritol tetra (metha) ) Acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and the like.
이들 중 적어도 1개의 에틸렌성 불포화 이중 결합을 갖는 화합물은 1종 단독 또는 2종 이상을 조합시켜서 사용된다.Among these, compounds having at least one ethylenically unsaturated double bond are used singly or in combination of two or more.
본 발명의 감광성 수지 조성물에 있어서의 적어도 1개의 에틸렌성 불포화 이중 결합을 갖는 화합물의 사용 비율은 수지성분 100중량부에 대해서 50중량부 이하인 것이 바람직하고, 30중량부 이하인 것이 보다 바람직하다. 이러한 비율로 적어도 1개의 에틸렌성 불포화 이중 결합을 갖는 화합물을 함유시킴으로써 본 발명의 감광성 수지 조성물로부터 얻어지는 절연막의 내열성 및 표면경도 등을 향상시킬 수 있다. 적어도 1개의 에틸렌성 불포화 이중 결합을 갖는 화합물을 첨가할 경우에는 (J)열 라디칼 발생제를 첨가하는 것이 바람직하다.The use ratio of the compound having at least one ethylenically unsaturated double bond in the photosensitive resin composition of the present invention is preferably 50 parts by weight or less, more preferably 30 parts by weight or less with respect to 100 parts by weight of the resin component. By containing a compound having at least one ethylenically unsaturated double bond in such a ratio, the heat resistance and surface hardness of the insulating film obtained from the photosensitive resin composition of the present invention can be improved. When adding a compound having at least one ethylenically unsaturated double bond, it is preferable to add (J) a thermal radical generator.
본 발명의 포지티브형 감광성 수지 조성물은 질량환산으로 전체 고형분에 대해서 적어도 상기 광산발생제(B)를 0.1질량%∼10질량%의 범위에서 포함하고, 또한 수지(A)를 합계로 40질량%∼95질량%의 범위에서 포함하는 것이 바람직하다. 또한, 전체 고형분에 대해서 수지(A)를 합계로 40질량%∼95질량%의 범위에서 포함하고, 광산발생제(B)를 0.1질량∼10질량%의 범위에서 포함하고, 또한 가교제(D)을 3질량∼40질량%의 범위에서 포함하는 것이 보다 바람직하다.The positive photosensitive resin composition of the present invention contains at least the photoacid generator (B) in the range of 0.1% by mass to 10% by mass relative to the total solid content in terms of mass conversion, and further comprises 40% by mass of the resin (A). It is preferable to include in the range of 95% by mass. In addition, with respect to the total solid content, the resin (A) is included in the range of 40% by mass to 95% by mass, the photoacid generator (B) is included in the range of 0.1% by mass to 10% by mass, and the crosslinking agent (D) It is more preferable to contain 3 mass% to 40 mass%.
<증감제><Sensitizer>
본 발명의 감광성 수지 조성물은 광산발생제(B)와의 조합에 있어서 그 분해를 촉진시키기 위해서 증감제를 함유하는 것이 바람직하다. 증감제는 활성 광선 또는 방사선을 흡수해서 전자여기상태가 된다. 전자여기상태가 된 증감제는 광산발생제와 접촉해서 전자 이동, 에너지 이동, 발열 등의 작용이 생긴다. 이것에 의해 광산발생제는 화학변화를 일으켜서 분해되어 산을 생성한다. 바람직한 증감제의 예로서는 이하의 화합물류에 속하고 있고, 또한 350nm∼450nm의 파장역 중 어느 하나에 흡수 파장을 갖는 화합물을 들 수 있다.It is preferable that the photosensitive resin composition of this invention contains a sensitizer in order to accelerate its decomposition in combination with the photoacid generator (B). The sensitizer absorbs actinic rays or radiation and becomes an electron excitation state. The sensitizer in the electronic excitation state comes into contact with the photoacid generator, and causes electron transfer, energy transfer, and heat generation. Thereby, the photoacid generator causes chemical changes and decomposes to produce an acid. Preferred sensitizers include compounds belonging to the following compounds and having absorption wavelengths in any one of the wavelength ranges of 350 nm to 450 nm.
다핵 방향족류(예를 들면, 피렌, 페릴렌, 트리페닐렌, 안트라센, 9,10-디부톡시안트라센, 9,10-디에톡시안트라센, 3,7-디메톡시안트라센, 9,10-디프로필옥시안트라센), 크산텐류(예를 들면, 플루오레세인, 에오신, 에리스로신, 로다민B, 로즈 벵갈), 크산톤류(예를 들면, 크산톤, 티오크산톤, 디메틸티오크산톤, 디에틸티옥산톤), 시아닌류(예를 들면 티아카르보시아닌, 옥사카르보시아닌), 메로시아닌류(예를 들면, 메로시아닌, 카르보메로시아닌), 로다시아닌류, 옥소놀류, 티아진류(예를 들면, 티오닌, 메틸렌블루, 톨루이딘블루), 아크리딘류(예를 들면, 아크리딘 오렌지, 클로로플라빈, 아크리플라빈), 아크리돈류(예를 들면, 아크리돈, 10-부틸-2-클로로아크리돈), 안트라퀴논류(예를 들면, 안트라퀴논), 스쿠알륨류(예를 들면, 스쿠알륨), 스티릴류, 베이스 스티릴류(예를 들면, 2-[2-[4-(디메틸아미노)페닐]에테닐]벤조옥사졸), 쿠마린류(예를 들면, 7-디에틸아미노4-메틸쿠마린, 7-히드록시4-메틸쿠마린, 2,3,6,7-테트라히드로-9-메틸-1H,5H,11H [1]벤조피라노[6,7,8-ij]퀴놀리딘-11-논).Polynuclear aromatics (for example, pyrene, perylene, triphenylene, anthracene, 9,10-dibutoxyanthracene, 9,10-diethoxyanthracene, 3,7-dimethoxyanthracene, 9,10-dipropyloxy Anthracene), xanthenes (e.g., fluorescein, eosin, erythrosine, rhodamine B, rose bengal), xanthones (e.g. xanthone, thioxanthone, dimethylthioxanthone, diethylthioxane) Tone), cyanines (for example, thiacarbocyanine, oxacarbocyanine), merocyanines (for example, merocyanine, carbomerocyanine), rodacyanine, oxonol, thiazines (For example, thionine, methylene blue, toluidine blue), acridines (for example, acridine orange, chloroflavin, acriflavine), acridones (for example, acridon, 10 -Butyl-2-chloroacridone), anthraquinones (for example, anthraquinone), squaliums (for example, squalium), styryls, base STRY Class (eg, 2- [2- [4- (dimethylamino) phenyl] ethenyl] benzoxazole), coumarins (eg, 7-diethylamino4-methylcoumarin, 7-hydroxy4) -Methylcoumarin, 2,3,6,7-tetrahydro-9-methyl-1H, 5H, 11H [1] benzopyrano [6,7,8-ij] quinolidine-11-non).
이들 증감제 중에서도 다핵 방향족류, 아크리돈류, 스티릴류, 베이스 스티릴류, 쿠마린류가 바람직하고, 다핵 방향족류가 보다 바람직하다. 다핵 방향족류 중에서도 안트라센 유도체가 가장 바람직하다.Among these sensitizers, polynuclear aromatics, acridons, styryls, base styryls, and coumarins are preferred, and polynuclear aromatics are more preferred. Among the polynuclear aromatics, anthracene derivatives are most preferred.
(경화막의 형성 방법)(How to form a cured film)
이어서, 본 발명의 경화막의 형성 방법을 설명한다. Next, the method of forming the cured film of the present invention will be described.
본 발명의 경화막의 형성 방법은 이하의 (1)∼(5)의 공정을 포함하는 것을 특징으로 한다.The method for forming a cured film of the present invention is characterized by including the following steps (1) to (5).
(1)본 발명의 감광성 수지 조성물을 기판 상에 적용하는 공정(1) Process of applying the photosensitive resin composition of the present invention on a substrate
(2)적용된 감광성 수지 조성물로부터 용제를 제거하는 공정(2) Process of removing solvent from applied photosensitive resin composition
(3)활성 광선에 의해 노광하는 공정(3) Process of exposing with active light
(4)수성 현상액에 의해 현상하는 공정(4) Process developed with aqueous developer
(5)열경화하는 공정(포스트 베이킹 공정)(5) Heat curing process (post baking process)
이하에 각 공정을 순서대로 설명한다.Each process is explained in order below.
(1)의 공정에서는 본 발명의 감광성 수지 조성물을 기판 상에 적용(통상은 도포)해서 용제를 포함하는 습윤막으로 한다.In the step (1), the photosensitive resin composition of the present invention is applied (usually applied) to a substrate to obtain a wet film containing a solvent.
가열 공정 전에 활성 광선을 전면조사하는 공정을 추가하면 활성 광선의 조사에 의해 발생되는 산에 의해 가교 반응을 촉진시킬 수 있다.Addition of a step of irradiating the active light before the heating process can promote a crosslinking reaction by an acid generated by irradiation of the active light.
이어서, 본 발명의 포지티브형 감광성 수지 조성물을 사용한 경화막의 형성 방법을 구체적으로 설명한다.Next, a method of forming a cured film using the positive photosensitive resin composition of the present invention will be specifically described.
(2)의 용제 제거 공정에서는 적용된 상기 막으로부터 감압(버큠) 및/또는 가열에 의해 용제를 제거해서 기판 상에 건조막을 형성시킨다.In the solvent removal step of (2), the solvent is removed from the applied film by depressurization (holding) and / or heating to form a dry film on the substrate.
(3)의 노광하는 공정에서는 얻어진 도막에 파장 300nm 이상 450nm 이하의 활성 광선을 조사한다. 이 공정에서는 (B) 광산발생제가 분해되어 산이 발생한다. 발생한 산의 촉매작용에 의해 (A)성분 중에 포함되는 산분해성기가 가수분해 되어서 카르복시기 또는 페놀성 수산기가 생성된다. 얻어진 막에 활성 광선을 조사함으로써 광산발생제가 분해되어 산이 발생한다. 발생한 산의 촉매작용에 의해 수지(A) 중에 포함되는 일반식(A2')으로 나타내어지는 구성 단위 중의 산해리성 기가 가수분해반응에 의해 분해되어 카르복실기가 생성된다. 이어서 알칼리 현상액을 사용해서 현상함으로써 알칼리 현상액에 용해되기 쉬운 카르복실기를 갖는 수지를 포함하는 노광부를 제거하고, 포지티브 화상이 형성된다.In the step of exposing (3), active light having a wavelength of 300 nm or more and 450 nm or less is irradiated to the obtained coating film. In this process, (B) the photoacid generator decomposes to generate an acid. The acid-decomposable group contained in the component (A) is hydrolyzed by the catalytic action of the generated acid to generate a carboxyl group or a phenolic hydroxyl group. By irradiating the obtained film with actinic light, a photoacid generator decomposes to generate an acid. The acid-dissociable group in the structural unit represented by the general formula (A2 ') contained in the resin (A) is decomposed by a hydrolysis reaction to generate a carboxyl group by the catalytic action of the generated acid. Subsequently, by developing using an alkali developer, the exposed portion containing the resin having a carboxyl group that is easily soluble in the alkali developer is removed, and a positive image is formed.
이 가수분해반응의 반응식을 이하에 나타낸다.The reaction formula of this hydrolysis reaction is shown below.
산촉매가 생성된 영역에 있어서 상기 가수분해반응을 가속시키기 위해서 필요에 따라서 노광후 가열 처리:Post Exposure Bake(이하, 「PEB」이라고도 한다)를 행할 수 있다. PEB에 의해 산분해성기로부터의 카르복시기 또는 페놀성 수산기의 생성을 촉진시킬 수 있다.In order to accelerate the hydrolysis reaction in the region where the acid catalyst is generated, post-exposure heat treatment: Post Exposure Bake (hereinafter also referred to as "PEB") can be performed as necessary. The production of carboxyl groups or phenolic hydroxyl groups from acid-decomposable groups can be promoted by PEB.
본 발명에 있어서의 식(1)으로 나타내어지는 모노머 단위 중의 산분해성기는 산분해의 활성화 에너지가 낮고, 노광에 의한 산발생제 유래의 산에 의해 용이하게 분해되어 카르복시기 또는 페놀성 수산기를 발생시키므로 반드시 PEB를 행하지 않고 현상에 의해 포지티브 화상을 형성할 수도 있다.The acid-decomposable group in the monomer unit represented by formula (1) in the present invention has low activation energy for acid decomposition, and is easily decomposed by acid derived from an acid generator by exposure to generate a carboxyl group or phenolic hydroxyl group. It is also possible to form a positive image by developing without performing PEB.
또한, 비교적 저온에서 PEB를 행함으로써 가교 반응을 일으키지 않고 산분해성기의 가수분해를 촉진시킬 수도 있다. PEB를 행하는 경우의 온도는 30℃ 이상 130℃ 이하인 것이 바람직하고, 40℃ 이상 110℃ 이하가 보다 바람직하고, 50℃ 이상 80℃ 이하가 특히 바람직하다.Moreover, it is also possible to promote the hydrolysis of the acid-decomposable group without causing a crosslinking reaction by performing PEB at a relatively low temperature. When PEB is performed, the temperature is preferably 30 ° C or higher and 130 ° C or lower, more preferably 40 ° C or higher and 110 ° C or lower, and particularly preferably 50 ° C or higher and 80 ° C or lower.
(4)의 현상하는 공정에서는 유리한 카르복시기 또는 페놀성 수산기를 갖는 공중합체를 알카리성 현상액을 사용해서 현상한다. 알카리성 현상액에 용해되기 쉬운 카르복시기 또는 페놀성 수산기를 갖는 수지 조성물을 포함하는 노광부 영역을 제거함으로써 포지티브 화상이 형성된다.In the developing step (4), a copolymer having an advantageous carboxyl group or phenolic hydroxyl group is developed using an alkaline developer. A positive image is formed by removing the region of the exposed portion containing the resin composition having a carboxyl group or a phenolic hydroxyl group that is easily soluble in an alkaline developer.
(5)의 포스트 베이킹하는 공정에 있어서 얻어진 포지티브 화상을 가열함으로써 모노머 단위(a1) 중의 산분해성기를 열분해하여 카르복시기 또는 페놀성 수산기를 생성시켜 모노머 단위(a2)의 가교기와 가교시킴으로써 경화막을 형성할 수 있다. 이 가열은 150℃ 이상의 고온으로 가열하는 것이 바람직하고, 180∼250℃로 가열하는 것이 보다 바람직하고, 200∼250℃로 가열하는 것이 특히 바람직하다. 가열 시간은 가열 온도 등에 의해 적당히 설정할 수 있지만, 10∼90분의 범위내로 하는 것이 바람직하다.By heating the positive image obtained in the step of post-baking in (5), the acid decomposable group in the monomer unit (a1) is thermally decomposed to generate a carboxy group or a phenolic hydroxyl group to crosslink the crosslinking group in the monomer unit (a2) to form a cured film. have. The heating is preferably heated to a high temperature of 150 ° C or higher, more preferably 180 to 250 ° C, and particularly preferably 200 to 250 ° C. The heating time can be appropriately set depending on the heating temperature or the like, but is preferably within the range of 10 to 90 minutes.
포스트 베이킹 공정 전에 활성 광선, 바람직하게는 자외선을 현상 패턴에 전면조사하는 공정을 추가하면 활성 광선조사에 의해 발생하는 산에 의해 가교 반응을 촉진시킬 수 있다.Adding a step of irradiating the development pattern with active light, preferably ultraviolet light, before the post-baking process can promote a crosslinking reaction with an acid generated by active light irradiation.
이어서, 본 발명의 감광성 수지 조성물을 사용한 경화막의 형성 방법을 구체적으로 설명한다.Next, a method for forming a cured film using the photosensitive resin composition of the present invention will be specifically described.
<감광성 수지 조성물의 조제 방법><Preparation method of photosensitive resin composition>
각종 성분을 소정의 비율로 또한 임의의 방법으로 혼합하고, 교반 용해해서 감광성 수지 조성물을 조제한다. 예를 들면, 각각의 성분을 미리 용제에 용해시킨 용액으로 한 후, 이들을 소정의 비율로 혼합해서 수지 조성물을 조제할 수도 있다. 이상과 같이 조제한 조성물 용액은 구멍직경 0.2㎛의 필터 등을 사용해서 여과한 후에 사용에 제공할 수도 있다.Various components are mixed in a predetermined ratio and by any method, and the mixture is stirred and dissolved to prepare a photosensitive resin composition. For example, a resin composition can also be prepared by preparing each component in a solution previously dissolved in a solvent, and then mixing them at a predetermined ratio. The composition solution prepared as described above may be provided for use after filtration using a filter having a pore diameter of 0.2 µm or the like.
<적용 공정 및 용제 제거 공정><Application process and solvent removal process>
감광성 수지 조성물을 소정의 기판에 적용하고, 감압 및/또는 가열(프리베이킹)에 의해 용제를 제거함으로써 소망의 건조 도막을 형성할 수 있다. 상기 기판으로서는 예를 들면 액정 표시 소자의 제조에 있어서는 편광판, 또한 필요에 따라서 블랙 매트릭스층, 컬러 필터층을 설치하고, 또한 투명 도전 회로층을 설치한 유리판 등을 예시할 수 있다. 기판에의 적용 방법은 특별히 한정되지 않고, 예를 들면, 슬릿 코팅법, 스프레이법, 롤 코팅법, 회전 도포법 등의 방법을 사용할 수 있다. 그 중에서도 슬릿 코팅법이 대형기판에 적합하다는 관점에서 바람직하다. 대형기판으로 제조하면 생산성이 높아 바람직하다. 여기서 대형기판이란 각 변이 1m 이상인 크기의 기판을 말한다.A desired dry coating film can be formed by applying a photosensitive resin composition to a predetermined substrate and removing the solvent by reducing pressure and / or heating (pre-baking). As the substrate, for example, in the manufacture of a liquid crystal display device, a polarizing plate, a black matrix layer and a color filter layer are provided as necessary, and a glass plate provided with a transparent conductive circuit layer can be exemplified. The method of application to the substrate is not particularly limited, and for example, methods such as a slit coating method, a spray method, a roll coating method, and a rotation coating method can be used. Especially, it is preferable from a viewpoint that a slit coating method is suitable for a large substrate. It is preferable to manufacture a large substrate due to high productivity. Here, a large substrate means a substrate having a size of 1 m or more on each side.
또한, (2)용제 제거 공정의 가열 조건은 미노광부에 있어서의 수지성분 중의 모노머 단위(a1)에 있어서 산분해성기가 분해되어 수지성분을 알칼리 현상액에 가용성으로 하지 않는 범위이며, 각 성분의 종류나 배합비에 따라서도 다르지만, 바람직하게는 80∼130℃에서 30∼120초간 정도이다.In addition, the heating condition of the (2) solvent removal step is a range in which the acid-decomposable group is decomposed in the monomer unit (a1) in the resin component in the unexposed portion so that the resin component is not soluble in the alkali developer. Although it differs depending on the mixing ratio, it is preferably about 30 to 120 seconds at 80 to 130 ° C.
<노광 공정 및 현상 공정(패턴 형성 방법)><Exposure process and development process (pattern formation method)>
노광 공정에서는 도막을 설치한 기판에 소정의 패턴을 갖는 마스크를 통해 활성 광선을 조사한다. 노광 공정 후 필요에 따라 가열 처리(PEB)를 행한 후, 현상 공정에서는 알카리성 현상액을 사용해서 노광부 영역을 제거해서 화상 패턴을 형성한다.In the exposure process, the active light is irradiated to the substrate on which the coating film is provided through a mask having a predetermined pattern. After the heat treatment (PEB) is performed as necessary after the exposure step, in the developing step, an exposed portion region is removed using an alkaline developer to form an image pattern.
활성 광선에 의한 노광에는 저압 수은등, 고압 수은등, 초고압 수은등, 케미칼 램프, LED 광원, 엑시머 레이저 발생 장치 등을 사용할 수 있고, g선(436nm), i선(365nm), h선(405nm) 등의 파장 300nm 이상 450nm 이하의 파장을 갖는 활성 광선을 바람직하게 사용할 수 있다. 또한, 필요에 따라 장파장 컷 필터, 단파장 컷 필터, 밴드 패스 필터와 같은 분광 필터를 통해서 조사광을 조정할 수도 있다.For exposure by actinic light, a low pressure mercury lamp, a high pressure mercury lamp, an ultra high pressure mercury lamp, a chemical lamp, an LED light source, an excimer laser generator, etc. can be used, such as g-ray (436nm), i-ray (365nm), h-ray (405nm), etc. Active light rays having a wavelength of 300 nm or more and 450 nm or less can be preferably used. In addition, if necessary, the irradiation light may be adjusted through a spectral filter such as a long wavelength cut filter, a short wavelength cut filter, or a band pass filter.
현상 공정에서 사용하는 현상액에는 염기성 화합물이 포함되는 것이 바람직하다. 염기성 화합물로서는 예를 들면, 수산화 리튬, 수산화 나트륨, 수산화 칼륨 등의 알칼리 금속 수산화물류; 탄산 나트륨, 탄산 칼륨 등의 알칼리 금속 탄산염류; 중탄산 나트륨, 중탄산 칼륨 등의 알칼리 금속 중탄산염류; 테트라메틸암모늄히드록시드, 테트라에틸암모늄히드록시드, 콜린히드록시드 등의 암모늄히드록시드류; 규산 나트륨, 메타규산 나트륨 등의 수용액을 사용할 수 있다. 또한, 상기 알칼리류의 수용액에 메탄올이나 에탄올 등의 수용성 유기용제나 계면활성제를 적당량 첨가한 수용액을 현상액으로서 사용할 수도 있다. It is preferable that the basic compound is contained in the developer used in the developing process. Examples of the basic compound include alkali metal hydroxides such as lithium hydroxide, sodium hydroxide and potassium hydroxide; Alkali metal carbonates such as sodium carbonate and potassium carbonate; Alkali metal bicarbonates such as sodium bicarbonate and potassium bicarbonate; Ammonium hydroxides such as tetramethylammonium hydroxide, tetraethylammonium hydroxide, and choline hydroxide; An aqueous solution such as sodium silicate or sodium metasilicate can be used. Further, an aqueous solution in which an appropriate amount of a water-soluble organic solvent such as methanol or ethanol or a surfactant is added to the aqueous solution of the alkalis can also be used as the developer.
현상액의 pH는 바람직하게는 10.0∼14.0이다.The pH of the developer is preferably 10.0 to 14.0.
현상 시간은 바람직하게는 30∼180초간이며, 또한, 현상의 방법은 퍼들법, 딥법 등 중 어느 것이라도 좋다. 현상 후에는 유수세정을 30∼90초간 행하여 소망의 패턴을 형성시킬 수 있다.The developing time is preferably 30 to 180 seconds, and the developing method may be any of a puddle method and a dip method. After development, water washing can be performed for 30 to 90 seconds to form a desired pattern.
<포스트 베이킹 공정(가교 공정)><Post baking process (crosslinking process)>
현상에 의해 얻어진 미노광 영역에 대응하는 패턴에 대해서 핫플레이트나 오븐 등의 가열 장치를 사용하고, 소정의 온도, 예를 들면 180∼250℃에서 소정의 시간, 예를 들면 핫플레이트 상이라면 5∼60분간, 오븐이면 30∼90분간 가열 처리를 함으로써 수지성분에 있어서의 산분해성기를 분해하고, 카르복시기 또는 페놀성 수산기를 발생시키고, 가교성기와 반응시켜서 가교시킴으로써 내열성, 경도 등이 우수한 보호막이나 층간 절연막을 형성할 수 있다. 또한, 가열 처리를 행할 때는 질소 분위기 하에서 행함으로써 투명성을 향상시킬 수도 있다. For a pattern corresponding to the unexposed area obtained by development, a heating device such as a hot plate or oven is used, and at a predetermined temperature, for example, 180 to 250 ° C, for a predetermined time, for example, 5 to 5 on a hot plate phase. A protective film or interlayer insulating film having excellent heat resistance, hardness, etc., by decomposing an acid decomposable group in a resin component by heating treatment for 30 minutes to 90 minutes in an oven, generating a carboxy group or a phenolic hydroxyl group, and reacting with a crosslinking group to crosslink it. Can form. Moreover, when heat-processing, transparency can also be improved by performing under nitrogen atmosphere.
또한, 가열 처리에 앞서 패턴을 형성한 기판에 활성 광선에 의해 재노광한 후, 포스트 베이킹하는 것(재노광/포스트 베이킹)에 의해 미노광 부분에 존재하는 (B)성분으로부터 산을 발생시켜 가교 공정을 촉진시키는 촉매로서 기능시키는 것이 바람직하다.Further, prior to heat treatment, after re-exposure to the substrate on which the pattern has been formed by actinic rays, post-baking (reexposure / post-baking) generates an acid from the component (B) present in the unexposed portion and crosslinks. It is desirable to function as a catalyst to accelerate the process.
즉, 본 발명의 경화막의 형성 방법은 현상 공정과 포스트 베이킹 공정 사이에 활성 광선에 의해 재노광하는 재노광 공정을 포함하는 것이 바람직하다. 재노광 공정에 있어서의 노광은 상기 노광 공정과 같은 수단에 의해 행하면 좋지만, 상기 재노광 공정에서는 기판의 본 발명의 감광성 수지 조성물에 의해 막이 형성된 측에 대해서 전면 노광을 행하는 것이 바람직하다.That is, it is preferable that the method for forming a cured film of the present invention includes a re-exposure step of re-exposure by actinic rays between the developing step and the post-baking step. The exposure in the re-exposure step may be performed by the same means as the above-described exposure step, but in the re-exposure step, it is preferable to perform full-face exposure on the side of the substrate formed with the photosensitive resin composition of the present invention.
재노광 공정의 바람직한 노광량으로서는 100∼1,000mJ/㎠이다.The preferred exposure amount of the reexposure process is 100 to 1,000 mJ / cm 2.
본 발명의 감광성 수지 조성물에 의해 절연성이 우수하고, 고온에서 베이킹된 경우에 있어서도 높은 투명성을 갖는 층간 절연막이 얻어진다. 본 발명의 감광성 수지 조성물을 사용해서 이루어지는 층간 절연막은 높은 투명성을 갖고, 경화막 물성이 우수하므로 유기 EL 표시 장치나 액정 표시 장치의 용도에 유용하다. The photosensitive resin composition of the present invention provides an insulating film having excellent insulating properties and high transparency even when baked at a high temperature. The interlayer insulating film formed by using the photosensitive resin composition of the present invention has high transparency and is excellent in physical properties of a cured film, and thus is useful for use in organic EL display devices or liquid crystal display devices.
본 발명의 유기 EL 표시 장치나 액정 표시 장치로서는 상기 본 발명의 감광성 수지 조성물을 사용해서 형성되는 평탄화막이나 층간 절연막을 갖는 것 이외는 특별히 제한되지 않고, 여러가지 구조를 취하는 공지의 각종 유기 EL 표시 장치나 액정 표시 장치를 들 수 있다.The organic EL display device or liquid crystal display device of the present invention is not particularly limited except for having a planarizing film or an interlayer insulating film formed by using the photosensitive resin composition of the present invention, and various known organic EL display devices taking various structures And a liquid crystal display device.
또한, 본 발명의 감광성 수지 조성물 및 본 발명의 경화막은 상기 용도에 한정되지 않고 각종 용도로 사용할 수 있다. 예를 들면, 평탄화막이나 층간 절연막 이외에도 컬러 필터의 보호막이나, 액정 표시 장치에 있어서의 액정층의 두께를 일정하게 유지하기 위한 스페이서나 고체 촬상 소자에 있어서 컬러 필터 상에 설치되는 마이크로 렌즈 등에 바람직하게 사용할 수 있다.Moreover, the photosensitive resin composition of this invention and the cured film of this invention are not limited to the said use, but can be used for various uses. For example, in addition to a planarization film or an interlayer insulating film, a protective film of a color filter, a spacer for keeping the thickness of a liquid crystal layer in a liquid crystal display device, a micro lens provided on a color filter in a solid-state imaging device, etc. are preferable. Can be used.
도 1은 유기 EL 표시 장치의 일례의 구성 개념도를 나타낸다. 보텀 이미션형의 유기 EL 표시 장치에 있어서의 기판의 모식적 단면도를 나타내고, 평탄화막(4)을 갖고 있다.1 shows a conceptual view of a configuration of an example of an organic EL display device. A schematic cross-sectional view of a substrate in a bottom emission type organic EL display device is shown, and a flattening film 4 is provided.
유리 기판(6) 상에 보텀 게이트형의 TFT(1)를 형성하고, 이 TFT(1)를 덮는 상태로 Si3N4로 이루어지는 절연막(3)이 형성되어 있다. 절연막(3)에 여기에서는 도시를 생략한 콘택트 홀을 형성한 후, 이 콘택트 홀을 통해 TFT(1)에 접속되는 배선(2)(높이 1.0㎛)이 절연막(3) 상에 형성되어 있다. 배선(2)은 TFT(1) 사이 또는 후공정에서 형성되는 유기 EL 소자와 TFT(1)를 접속하기 위한 것이다.A
또한, 배선(2)의 형성에 의한 요철을 평탄화하기 위해서 배선(2)에 의한 요철을 메워 넣는 상태로 절연막(3) 상에 평탄화층(4)이 형성되어 있다. Further, in order to flatten the unevenness due to the formation of the wiring 2, the planarization layer 4 is formed on the insulating
평탄화막(4) 상에는 보텀 이미션형의 유기 EL 소자가 형성되어 있다. 즉, 평탄화막(4) 상에 ITO로 이루어지는 제1전극(5)이 콘택트 홀(7)을 통해 배선(2)에 접속시켜서 형성되어 있다. 또한, 제1전극(5)은 유기 EL 소자의 양극에 상당한다.On the planarization film 4, a bottom emission type organic EL element is formed. That is, the first electrode 5 made of ITO is formed on the planarization film 4 by connecting it to the wiring 2 through the contact hole 7. Note that the first electrode 5 corresponds to the anode of the organic EL element.
제1전극(5)의 주변을 덮는 형상의 절연막(8)이 형성되어 있고, 이 절연막(8)을 설치함으로써 제1전극(5)과 이 후의 공정에서 형성하는 제2전극 사이의 쇼트를 방지할 수 있다. An insulating film 8 having a shape covering the periphery of the first electrode 5 is formed, and by installing the insulating film 8, a short circuit between the first electrode 5 and the second electrode formed in a subsequent process is prevented. can do.
또한, 도 1에는 도시가 생략되어 있지만, 소망의 패턴 마스크를 통해 정공 수송층, 유기 발광층, 전자 수송층을 순차 증착해서 설치하고, 이어서, 기판 상방의 전체면에 Al로 이루어지는 제2전극을 형성하고, 밀봉용 유리판과 자외선 경화형 에폭시 수지를 사용해서 서로 부착시킴으로써 밀봉하고, 각 유기 EL 소자에 이것을 구동하기 위한 TFT(1)가 접속되어 이루어지는 액티브 매트릭스형의 유기 EL 표시 장치가 얻어진다.In addition, although not shown in FIG. 1, a hole transport layer, an organic light emitting layer, and an electron transport layer are sequentially deposited through a desired pattern mask, and then a second electrode made of Al is formed on the entire surface of the substrate, An active matrix type organic EL display device is obtained, which is sealed by adhering to each other using a sealing glass plate and an ultraviolet curable epoxy resin, and the
도 2는 액티브 매트릭스 방식의 액정 표시 장치(10)의 일례를 나타내는 개념적 단면도이다. 이 컬러 액정 표시 장치(10)는 배면에 백라이트 유닛(12)을 갖는 액정 패널로서, 액정 패널은 편광 필름이 붙여진 2매의 유리 기판(14,15) 사이에 배치된 모든 화소에 대응하는 TFT(16)의 소자가 배치되어 있다. 유리 기판 상에 형성된 각 소자에는 경화막(17) 중에 형성된 콘택트 홀(18)을 통해 화소전극을 형성하는 ITO 투명전극(19)이 배선되어 있다. ITO 투명전극(19) 상에는 액정(20)의 층과 블랙 매트릭스를 배치한 RGB 컬러 필터(22)가 설치되어 있다.2 is a conceptual cross-sectional view showing an example of the active matrix type
본 발명의 유기 EL 표시 장치 및 액정 표시 장치가 구비하는 TFT(Thin-Film Transistor)의 구체예로서는 어모퍼스 실리콘-TFT, 실리콘 저온 폴리실리콘-TFT, 산화물 반도체 TFT를 들 수 있다. 본 발명의 경화막은 전기 특성이 우수하므로 이들의 TFT에 조합시켜서 바람직하게 사용할 수 있다.Examples of the TFT (Thin-Film Transistor) included in the organic EL display device and the liquid crystal display device of the present invention include amorphous silicon-TFT, silicon low-temperature polysilicon-TFT, and oxide semiconductor TFT. Since the cured film of the present invention has excellent electrical properties, it can be suitably used in combination with these TFTs.
또한, 본 발명의 액정 표시 장치가 취할 수 있는 액정 표시 장치의 방식으로서는 TN(TwistedNematic)방식, VA(Virtical Alignment)방식, IPS(In-Place-Switching)방식, FFS(Frings Field Switching)방식, OCB(Optical Compensated Bend)방식 등을 들 수 있다.In addition, as a method of the liquid crystal display device of the present invention, TN (TwistedNematic) method, VA (Virtical Alignment) method, IPS (In-Place-Switching) method, FFS (Frings Field Switching) method, OCB And the (Optical Compensated Bend) method.
또한, 본 발명의 액정 표시 장치가 취할 수 있는 액정 배향막의 구체적인 배향 방식으로서는 러빙 배향법, 광배향 방식 등을 들 수 있다. 또한, 일본 특허 공개 2003-149647호 공보나 일본 특허 공개 2011-257734호 공보에 기재된 PSA(Polymer Sustained Alignment)기술에 의해 폴리머 배향 지지되어 있어도 좋다.Moreover, a rubbing alignment method, a photo-alignment method, etc. are mentioned as a specific alignment method of the liquid crystal aligning film which the liquid crystal display device of this invention can take. Further, the polymer orientation may be supported by PSA (Polymer Sustained Alignment) technology described in Japanese Patent Laid-Open No. 2003-149647 or Japanese Patent Laid-Open No. 2011-257734.
실시예Example
이하에 실시예를 들어서 본 발명을 더욱 구체적으로 설명한다. 이하의 실시예에 나타내는 재료, 사용량, 비율, 처리 내용, 처리 순서 등은 본 발명의 취지를 일탈하지 않는 한, 적당히 변경할 수 있다. 따라서, 본 발명의 범위는 이하에 나타내는 구체예에 한정되는 것은 아니다. 또한, 특별히 언급하지 않는 한 「부」, 「%」는 질량기준이다.The present invention will be described in more detail with reference to Examples below. Materials, amounts, proportions, treatment contents, treatment procedures, and the like shown in the following examples can be appropriately changed without departing from the spirit of the present invention. Therefore, the scope of the present invention is not limited to the specific examples shown below. Note that "parts" and "%" are based on mass unless otherwise specified.
이하의 합성예에 있어서, 이하의 부호는 각각 이하의 화합물을 나타낸다.In the following synthesis examples, the following symbols denote the following compounds, respectively.
V-65:2,2'-아조비스(2,4-디메틸발레로니트릴)(와코 준야쿠 고교제)V-65: 2,2'-azobis (2,4-dimethylvaleronitrile) (manufactured by Wako Junyaku High School)
V-601:디메틸-2,2'-아조비스(2-메틸프로피오네이트)(와코 준야쿠 고교제)V-601: dimethyl-2,2'-azobis (2-methylpropionate) (manufactured by Wako Junyaku High School)
MAEVE:메타크릴산 1-에톡시에틸MAEVE: 1-ethoxyethyl methacrylate
MATHF:메타크릴산 테트라히드로-2H-푸란-2-일MATHF: Methacrylic acid tetrahydro-2H-furan-2-yl
MATHP:메타크릴산 테트라히드로-2H-피란-2-일MATHP: Tetrahydro methacrylate-2H-pyran-2-yl
NBMA:n-부톡시메틸아크릴아미드(NBMA, 도쿄 카세이제)NBMA: n-butoxymethylacrylamide (NBMA, manufactured by Tokyo Kasei)
GMA:글리시딜메타크릴레이트GMA: glycidyl methacrylate
St:스티렌St: Styrene
MMA:메타크릴산 메틸MMA: methyl methacrylate
MAA:메타크릴산MAA: Methacrylic acid
EDM:디에틸렌글리콜에틸메틸에테르(도호 카가쿠 고교제, 하이솔브 EDM)EDM: Diethylene glycol ethyl methyl ether (manufactured by Toho Kagaku High School, Highsolve EDM)
OXE-30:메타크릴산(3-에틸옥세탄-3-일)메틸(오사카 유키 카가쿠 고교(주))OXE-30: Methacrylic acid (3-ethyloxetan-3-yl) methyl (Osaka Yuki Kagaku High School Co., Ltd.)
DCPM:메타크릴산(트리시클로[5.2.1.02,6]데칸-8-일)DCPM: Methacrylic acid (tricyclo [5.2.1.02,6] decane-8-yl)
(a3-1)∼(a3-3), (a3-5)∼(a3-7), (a3-9), (a3-10), (a3-14), (a3-16) 하기 화합물(a3-1) to (a3-3), (a3-5) to (a3-7), (a3-9), (a3-10), (a3-14), (a3-16) the following compounds
<중합체 C-2의 합성><Synthesis of Polymer C-2>
3구 플라스크에 용매로서 디에틸렌글리콜에틸메틸에테르(도호 카가쿠 고교제, 하이솔브 EDM, 36g)를 넣고, 질소 분위기 하에서 70℃로 승온했다. 글리시딜메타크릴레이트 34.7g(244mmmol), 메타크릴산 메틸 1.63g(16.3mmol), 라이트아크릴레이트 HO-a-HH(교에이샤제, 7.04g, 26.06mmmol), 스티렌 4.07g(39.08mmol)의 혼합 용액을 질소기류 하에서 70℃로 가열했다. 이 혼합 용액을 교반하면서 라디칼 중합 개시제 V-65(와코 준야쿠 고교(주)제, 3.64g) 및 디에틸렌글리콜에틸메틸에테르(35.6g)의 혼합 용액을 2.5시간에 걸쳐서 적하했다. 적하가 종료되고 나서 70℃에서 5시간 반응시킴으로써 바인더 a-1의 디에틸렌글리콜에틸메틸에테르 용액(고형분 농도:40중량%)을 얻었다. 얻어진 바인더 C-2의 중량 평균 분자량은 9,000이었다.Diethylene glycol ethyl methyl ether (manufactured by Toho Kagaku Kogyo Co., Highsolve EDM, 36 g) was added to the three-neck flask as a solvent, and the temperature was elevated to 70 ° C under a nitrogen atmosphere. Glycidyl methacrylate 34.7g (244mmmol), methyl methacrylate 1.63g (16.3mmol), light acrylate HO-a-HH (Kyoeisha, 7.04g, 26.06mmmol), styrene 4.07g (39.08mmol) ) Was heated to 70 ° C under a nitrogen stream. While stirring this mixed solution, a mixed solution of a radical polymerization initiator V-65 (manufactured by Wako Pure Chemical Industries, Ltd., 3.64 g) and diethylene glycol ethyl methyl ether (35.6 g) was added dropwise over 2.5 hours. After the dropping was completed, the mixture was reacted at 70 ° C for 5 hours to obtain a diethylene glycol ethyl methyl ether solution (solid content concentration: 40% by weight) of binder a-1. The weight average molecular weight of the obtained binder C-2 was 9,000.
<MATHF의 합성><Synthesis of MATHF>
메타크릴산(86g, 1몰)을 15℃로 냉각해 두고, 캠퍼 술폰산(4.6g, 0.02몰)첨가했다. 그 용액에 2-디히드로푸란(71g, 1몰, 1.0당량)을 적하했다. 1시간 교반한 후에, 포화 탄산수소나트륨(500㎖)을 첨가하고, 아세트산 에틸(500㎖)로 추출하고, 황산 마그네슘으로 건조후, 불용물을 여과후 40℃ 이하에서 감압 농축하고, 잔사인 황색 오일형상물을 감압 증류해서 비점(bp.) 54∼56℃/3.5mmHg 증류분의 메타크릴산 테트라히드로-2H-푸란-2-일(MATHF) 125g을 무색 오일형상물로서 얻었다(수율 80%).Methacrylic acid (86 g, 1 mol) was cooled to 15 ° C, and camphor sulfonic acid (4.6 g, 0.02 mol) was added. 2-Dihydrofuran (71 g, 1 mol, 1.0 eq) was added dropwise to the solution. After stirring for 1 hour, saturated sodium hydrogen carbonate (500 mL) was added, extracted with ethyl acetate (500 mL), dried over magnesium sulfate, filtered and concentrated under reduced pressure at 40 ° C. or lower after filtering, and the residue was yellow. The oily product was distilled under reduced pressure to obtain 125 g of methacrylic acid tetrahydro-2H-furan-2-yl (MATHF) having a boiling point (bp.) Of 54 to 56 ° C / 3.5 mmHg as a colorless oily product (yield 80%).
<중합체 A-1의 합성><Synthesis of Polymer A-1>
3구 플라스크에 용매로서 디에틸렌글리콜에틸메틸에테르(도호 카가쿠 고교제, 하이솔브 EDM, 43g)를 넣고, 질소 분위기 하에서 90℃로 승온했다. 그 용액에 단량체 성분으로서 메타크릴산 1-에톡시에틸(MAEVE, 20.61g), n-부톡시메틸아크릴아미드(NBMA, 도쿄 카세이제, 14.58g), 라이트아크릴레이트 HO-a-HH(교에이샤제, 19.81g), 스티렌(St, 와코 준야쿠 고교제, 3.39g), 및, 중합 개시제로서 디메틸 2,2'-아조비스(2-메틸프로피오네이트)(V-601, 와코 준야쿠 고교제, 6.00g, 모노머에 대하여 8몰%), 디에틸렌글리콜에틸메틸에테르(도호 카가쿠 고교제, 하이솔브 EDM, 43g)을 용해시켜 2시간에 걸쳐서 적하했다. 적하 종료후 2시간 교반했다. 그 용액에 또한 V-601(1.5g, 모노머에 대하여 2몰%)을 첨가하고, 또한 2시간 교반하고, 반응을 종료시켰다. 그것에 의해 바인더 A-1을 얻었다. 중량 평균 분자량은 16000이었다.Diethylene glycol ethyl methyl ether (manufactured by Toho Kagaku Kogyo Co., Highsolve EDM, 43 g) was added to the three-neck flask as a solvent, and the temperature was raised to 90 ° C under a nitrogen atmosphere. As a monomer component in the solution, methacrylic acid 1-ethoxyethyl (MAEVE, 20.61 g), n-butoxymethylacrylamide (NBMA, manufactured by Tokyo Kasei, 14.58 g), light acrylate HO-a-HH (Kyoe Ishaze, 19.81 g), Styrene (St, Wako Junyaku High School, 3.39 g), and dimethyl 2,2'-azobis (2-methylpropionate) (V-601, Wako Junyaku as polymerization initiator) High school agent, 6.00 g, 8 mol% with respect to monomer) and diethylene glycol ethyl methyl ether (Toho Kagaku Kogyo company, Hisolve EDM, 43 g) were dissolved and added dropwise over 2 hours. It stirred after completion | finish of dripping for 2 hours. V-601 (1.5 g, 2 mol% based on monomer) was also added to the solution, stirred for 2 hours, and the reaction was terminated. Thereby, binder A-1 was obtained. The weight average molecular weight was 16000.
모노머 종류 등을 하기 표에 나타내는 대로 변경하고, 중합체 A-2∼24, A'-1∼5, 및 C-1, C-3∼5를 마찬가지로 합성했다.The monomer types and the like were changed as shown in the table below, and polymers A-2 to 24, A'-1 to 5, and C-1 and C-3 to 5 were synthesized similarly.
(감광성 수지 조성물의 조정)(Adjustment of photosensitive resin composition)
[실시예 1][Example 1]
표에 기재된 고형분비가 되도록 성분을 용해 혼합하고, 구경 0.2㎛의 폴리테트라플루오로에틸렌제 필터로 여과하고, 실시예 1의 감광성 수지 조성물을 얻었다. 또한, 용매는 프로필렌글리콜모노메틸에테르아세테이트/디에틸렌글리콜에틸메틸에테르/1,3-부틸렌글리콜디아세테이트=60/37/3(중량비)의 혼합 용매를 사용하고, 점도가 5mPa·s가 되도록 조정했다.The components were dissolved and mixed so as to have a solid secretion shown in the table, filtered through a filter made of polytetrafluoroethylene having a diameter of 0.2 µm, and the photosensitive resin composition of Example 1 was obtained. In addition, as a solvent, a mixed solvent of propylene glycol monomethyl ether acetate / diethylene glycol ethyl methyl ether / 1,3-butylene glycol diacetate = 60/37/3 (weight ratio) was used, and the viscosity was 5 mPa · s. Adjusted.
[실시예 2∼36, 비교예 1∼5][Examples 2 to 36 and Comparative Examples 1 to 5]
실시예 1에 있어서 사용한 각 화합물을 표 4∼7에 기재된 화합물로 변경한 이외는 실시예 1과 동일하게 조정했다. Each compound used in Example 1 was adjusted in the same manner as in Example 1 except that the compounds described in Tables 4 to 7 were changed.
실시예, 비교예에 사용한 각 화합물을 나타내는 약호의 상세한 것은 이하와 같다.The details of the symbol used for each compound used in Examples and Comparative Examples are as follows.
B-1:PAG-103(BASF사제)B-1: PAG-103 (manufactured by BASF)
B-1B-1
B-2:PAI-101(치바스페셜티 케미컬사제)B-2: PAI-101 (manufactured by Chiba Specialty Chemicals)
B-3:하기에 나타내는 구조(합성예는 후술한다)B-3: Structure shown below (synthesis examples will be described later)
B-4:하기에 나타내는 구조(합성예는 후술한다)B-4: Structure shown below (synthesis example will be described later)
<B-3의 합성><Synthesis of B-3>
B-3으로서 나타낸 화합물(α-(메틸술포닐옥시이미노)-2-페닐아세토니트릴)은 이하와 같이 합성했다.The compound represented by B-3 (α- (methylsulfonyloxyimino) -2-phenylacetonitrile) was synthesized as follows.
[α-(히드록시이미노)-2-페닐아세토니트릴의 합성][Synthesis of α- (hydroxyimino) -2-phenylacetonitrile]
페닐아세토니트릴 5.85g(도쿄 카세이사제)을 테트라히드로푸란:50㎖(와코 준야쿠사제)에 혼합시키고, 빙욕에 부여해서 반응액을 5℃ 이하로 냉각했다. 이어서, SM-28(나트륨메톡시드 28% 메탄올 용액, 와코 준야쿠사제) 11.6g을 적하하고, 빙욕 하에서 30분간 교반하여 반응시켰다. 이어서, 아질산 이소펜틸 7.03g(도쿄 카세이사제)을 내온 20℃ 이하로 유지하면서 적하하고, 적하 종료후에 반응액을 실온화 1시간 반응시켰다. 얻어진 반응액을 수산화 나트륨 1g을 용해시킨 물 150㎖에 투입해서 완전용해시키고, 이어서 아세트산 에틸 100㎖를 첨가해서 분액하고, 목적물을 갖는 수층 약 180㎖를 얻었다. 또한 다시 아세트산 에틸 100㎖를 첨가하고, 농염산으로 수층을 pH3 이하의 산성으로 하고, 생성물을 추출, 농축했다. 얻어진 조결정을 헥산으로 세정하면, α-(히드록시이미노)-2-페닐아세토니트릴 4.6g이 수율 63%로 얻어졌다.5.85 g of phenyl acetonitrile (manufactured by Tokyo Chemical Industry Co., Ltd.) was mixed with tetrahydrofuran: 50 ml (manufactured by Wako Pure Chemical Industries, Ltd.) and applied to an ice bath to cool the reaction solution to 5 ° C or lower. Subsequently, 11.6 g of SM-28 (sodium methoxide 28% methanol solution, manufactured by Wako Pure Chemical Industries, Ltd.) was added dropwise, and the mixture was stirred and reacted under an ice bath for 30 minutes. Subsequently, 7.03 g of isopentyl nitrite (manufactured by Tokyo Chemical Industry Co., Ltd.) was added dropwise while maintaining an internal temperature of 20 ° C or lower, and the reaction solution was allowed to react for 1 hour at room temperature after completion of the dropwise addition. The obtained reaction solution was poured into 150 ml of water in which 1 g of sodium hydroxide was dissolved, completely dissolved, and then 100 ml of ethyl acetate was added and separated to obtain about 180 ml of an aqueous layer having the target product. Further, 100 ml of ethyl acetate was added again, the aqueous layer was made acidic with a pH of 3 or less with concentrated hydrochloric acid, and the product was extracted and concentrated. When the obtained crude crystal was washed with hexane, 4.6 g of α- (hydroxyimino) -2-phenylacetonitrile was obtained in a yield of 63%.
[α-(메틸술포닐옥시이미노)-2-페닐아세토니트릴(화합물 b-3)의 합성][Synthesis of α- (methylsulfonyloxyimino) -2-phenylacetonitrile (Compound b-3)]
α-(히드록시이미노)-2-페닐아세토니트릴 11.5g을 테트라히드로푸란:100㎖(와코 준야쿠사제)에 용해시키고, 빙욕에 부여하여 반응액을 5℃ 이하로 냉각했다. 이어서 메탄술포닐클로리드 9.9g(와코 준야쿠사제)을 적하하고, 이어서 트리에틸아민 9.55g(와코 준야쿠사제)을 내온 20℃ 이하로 유지하면서 적하하고, 빙욕 하에서 1시간 교반하여 반응시켰다.11.5 g of α- (hydroxyimino) -2-phenylacetonitrile was dissolved in 100 mL of tetrahydrofuran (manufactured by Wako Pure Chemical Industries, Ltd.), and applied to an ice bath to cool the reaction solution to 5 ° C or lower. Subsequently, 9.9 g of methanesulfonyl chloride (manufactured by Wako Junyakus) was added dropwise, and then, 9.55 g (manufactured by Wako Junyakus) of triethylamine was added dropwise while maintaining an internal temperature of 20 ° C. or lower, and the mixture was stirred and reacted under an ice bath for 1 hour.
얻어진 반응액을 물 500㎖에 적하하고, 실온하에서 1시간 교반했다. 얻어진 분말상의 석출물을 여과, 건조시키면, α-(메틸술포닐옥시이미노)-2-페닐아세토니트릴(화합물 b-5) 16g이 수율 90%로 얻어졌다. 이 화합물의 H-NMR 스펙트럼은 생성물이 옥심 구조 이성체(syn/anti)의 혼합물인 것을 나타내고, 그 존재비는 syn:anti=25/75였다.The obtained reaction solution was added dropwise to 500 ml of water, and stirred at room temperature for 1 hour. When the obtained powdery precipitate was filtered and dried, 16 g of α- (methylsulfonyloxyimino) -2-phenylacetonitrile (compound b-5) was obtained in a yield of 90%. The H-NMR spectrum of this compound indicates that the product is a mixture of oxime structure isomers (syn / anti), and the abundance ratio is syn: anti = 25/75.
<B-4의 합성><Synthesis of B-4>
일본 특허 공표 2002-528451호 공보의 단락번호 [0108]에 기재된 방법에 따라서 α-(p-톨루엔술포닐옥시이미노)페닐아세토니트릴(화합물 b-4)을 합성했다.Α- (p-toluenesulfonyloxyimino) phenylacetonitrile (Compound b-4) was synthesized according to the method described in paragraph No. [0108] of Japanese Patent Publication No. 2002-528451.
B-5:하기에 나타내는 구조(합성예는 후술한다)B-5: Structure shown below (synthesis examples will be described later)
B-6:하기에 나타내는 구조(합성예는 후술한다)B-6: Structure shown below (synthesis examples will be described later)
B-7:하기에 나타내는 구조(합성예는 후술한다)B-7: Structure shown below (synthesis examples will be described later)
B-8:하기에 나타내는 구조(합성예는 후술한다)B-8: Structure shown below (synthesis examples will be described later)
<B-5의 합성><Synthesis of B-5>
1-1.합성 중간체 B-5A의 합성1-1. Synthesis of Synthetic Intermediate B-5A
2-아미노벤젠티올:31.3g(도쿄 카세이 고교(주)제)을 톨루엔:100㎖(와코 준야쿠 고교(주)제)에 실온(25℃) 하에서 용해시켰다. 이어서, 얻어진 용액에 페닐아세틸클로리드:40.6g(도쿄 카세이 고교(주)제)을 적하하고, 실온 하에서 1시간, 이어서 100℃에서 2시간 교반하여 반응시켰다. 얻어진 반응액에 물 500㎖를 넣어 석출한 염을 용해시키고, 톨루엔 유분을 추출하고, 추출액을 로터리 에바포레이터로 농축시키고, 합성 중간체 B-5A를 얻었다.2-Aminobenzenethiol: 31.3 g (manufactured by Tokyo Kasei Kogyo Co., Ltd.) was dissolved in toluene: 100 ml (manufactured by Wako Junyaku Kogyo Co., Ltd.) under room temperature (25 ° C). Subsequently, phenylacetyl chloride: 40.6 g (manufactured by Tokyo Kasei Kogyo Co., Ltd.) was added dropwise to the resulting solution, and reacted by stirring at room temperature for 1 hour and then at 100 ° C for 2 hours. 500 ml of water was added to the obtained reaction solution to dissolve the precipitated salt, toluene oil was extracted, and the extract was concentrated with a rotary evaporator to obtain a synthetic intermediate B-5A.
1-2.B-5의 합성Synthesis of 1-2.B-5
상기와 같이 해서 얻어진 합성 중간체 B-5A 2.25g을 테트라히드로푸란:10㎖(와코 준야쿠 고교(주)제)에 혼합시킨 후, 빙욕에 부여하여 반응액을 5℃ 이하로 냉각했다. 이어서, 반응액에 테트라메틸암모늄히드록시드:4.37g(25질량% 메탄올 용액, Alfa Acer사제)을 적하하고, 빙욕 하에서 0.5시간 교반해서 반응시켰다. 또한, 아질산 이소펜틸:7.03g을 내온 20℃ 이하로 유지하면서 적하하고, 적하 종료후에 반응액을 실온까지 승온 후, 한시간 교반했다. 2.25 g of the synthetic intermediate B-5A obtained as described above was mixed with 10 ml of tetrahydrofuran (manufactured by Wako Pure Chemical Industries, Ltd.), and then applied to an ice bath to cool the reaction solution to 5 ° C or lower. Subsequently, tetramethylammonium hydroxide: 4.37g (25 mass% methanol solution, Alfa Acer company make) was dripped at the reaction liquid, and it reacted by stirring for 0.5 hour in an ice bath. Furthermore, isopentyl nitrite: 7.03 g was added dropwise while maintaining an internal temperature of 20 ° C or lower, and after completion of the dropwise addition, the reaction solution was heated to room temperature, and then stirred for 1 hour.
이어서, 반응액을 5℃ 이하로 냉각한 후, p-톨루엔술포닐클로리드(1.9g) (도쿄 카세이 고교(주)제)를 투입하고, 10℃ 이하를 유지하면서 1시간 교반했다. 그 후 물 80㎖를 투입하고, 0℃에서 1시간 교반했다. 얻어진 석출물을 여과한 후, 이소프로필알콜(IPA) 60㎖를 투입하고, 50℃로 가열해서 1시간 교반하고, 열시 여과, 건조시킴으로써 B-5(상술의 구조) 1.8g을 얻었다. Subsequently, after the reaction solution was cooled to 5 ° C or lower, p-toluenesulfonyl chloride (1.9 g) (manufactured by Tokyo Kasei Kogyo Co., Ltd.) was added and stirred for 1 hour while maintaining at 10 ° C or lower. Thereafter, 80 ml of water was added, and the mixture was stirred at 0 ° C for 1 hour. After filtering the obtained precipitate, 60 ml of isopropyl alcohol (IPA) was added, heated to 50 ° C., stirred for 1 hour, filtered and dried on heat to obtain 1.8 g of B-5 (structure described above).
얻어진 B-5의 1H-NMR 스펙트럼(300MHz, 중DMSO((D3C)2S=O))는 δ=8.2∼8.17(m,1H), 8.03∼8.00(m,1H), 7.95∼7.9(m,2H), 7.6∼7.45(m,9H), 2.45(s,3H)였다.The obtained B-5 has 1 H-NMR spectrum (300 MHz, heavy DMSO ((D 3 C) 2 S = O)) δ = 8.2 to 8.17 (m, 1H), 8.03 to 8.00 (m, 1H), 7.95 to 7.9 (m, 2H), 7.6 to 7.45 (m, 9H), 2.45 (s, 3H).
상기 1H-NMR 측정 결과로부터 얻어진 B-5는 1종 단독의 기하 이성체인 것이 추정된다.It is estimated that B-5 obtained from the results of the above 1 H-NMR measurement is a single type isomer.
<B-6의 합성><Synthesis of B-6>
2-나프톨(10g), 클로로벤젠(30㎖)의 현탁 용액에 염화 알루미늄(10.6g), 2-클로로프로피오닐클로리드(10.1g)를 첨가하고, 혼합액을 40℃로 가열해서 2시간 반응시켰다. 빙냉 하에서 반응액에 4NHCl 수용액(60㎖)을 적하하고, 아세트산 에틸(50㎖)을 첨가해서 분액했다. 유기층에 탄산 칼륨(19.2g)을 첨가하고, 40℃에서 1시간 반응시킨 후, 2NHCl 수용액(60㎖)을 첨가해서 분액하고, 유기층을 농축후, 결정을 디이소프로필에테르(10㎖)로 리슬러리하고, 여과, 건조해서 케톤 화합물(6.5g)을 얻었다.Aluminum chloride (10.6 g) and 2-chloropropionyl chloride (10.1 g) were added to a suspension solution of 2-naphthol (10 g) and chlorobenzene (30 mL), and the mixture was heated to 40 ° C. and reacted for 2 hours. . Under ice-cooling, 4 NHCl aqueous solution (60 mL) was added dropwise to the reaction solution, and ethyl acetate (50 mL) was added to separate the solution. Potassium carbonate (19.2 g) was added to the organic layer, and after reacting at 40 ° C. for 1 hour, a 2 NHCl aqueous solution (60 mL) was added to separate the solution, and the organic layer was concentrated, and the crystals were recovered with diisopropyl ether (10 mL). The slurry was filtered, and dried to obtain a ketone compound (6.5 g).
얻어진 케톤 화합물(3.0g), 메탄올(30㎖)의 현탁 용액에 아세트산(7.3g), 50질량% 히드록실아민 수용액(8.0g)을 첨가하고, 가열 환류했다. 방냉 후, 물(50㎖)을 첨가하고, 석출한 결정을 여과, 냉메탄올 세정후, 건조해서 옥심 화합물(2.4g)을 얻었다.Acetic acid (7.3 g) and 50 mass% hydroxylamine aqueous solution (8.0 g) were added to the suspension solution of the obtained ketone compound (3.0 g) and methanol (30 mL), and the mixture was heated to reflux. After cooling, water (50 ml) was added, and the precipitated crystals were filtered, washed with cold methanol, and dried to obtain an oxime compound (2.4 g).
얻어진 옥심 화합물(1.8g)을 아세톤(20㎖)에 용해시키고, 빙냉 하에서 트리에틸아민(1.5g), p-톨루엔술포닐클로리드(2.4g)를 첨가하고, 실온으로 승온해서 1시간 반응시켰다. 반응액에 물(50㎖)을 첨가하고, 석출한 결정을 여과후, 메탄올(20㎖)로 리슬러리하고, 여과, 건조해서 B-6(상술의 구조) 2.3g을 얻었다. The obtained oxime compound (1.8 g) was dissolved in acetone (20 mL), triethylamine (1.5 g) and p-toluenesulfonyl chloride (2.4 g) were added under ice cooling, and the mixture was heated to room temperature and reacted for 1 hour. . Water (50 ml) was added to the reaction solution, and the precipitated crystals were filtered, reslurried with methanol (20 ml), filtered and dried to obtain 2.3 g of B-6 (structure described above).
또한, B-6의 1H-NMR 스펙트럼(300MHz, CDCl3)은 δ=8.3(d,1H), 8.0(d,2H), 7.9(d,1H), 7.8(d,1H), 7.6(dd,1H), 7.4(dd,1H) 7.3(d,2H), 7.1(d.1H), 5.6(q,1H), 2.4(s,3H), 1.7(d,3H)이었다.In addition, 1 H-NMR spectrum of B-6 (300MHz, CDCl 3 ) is δ = 8.3 (d, 1H), 8.0 (d, 2H), 7.9 (d, 1H), 7.8 (d, 1H), 7.6 ( dd, 1H), 7.4 (dd, 1H) 7.3 (d, 2H), 7.1 (d.1H), 5.6 (q, 1H), 2.4 (s, 3H), 1.7 (d, 3H).
<B-7의 합성><Synthesis of B-7>
2-나프톨(20g)을 N,N-디메틸아세트아미드(150㎖)에 용해시키고, 탄산 칼륨(28.7g), 2-브로모옥탄산 에틸(52.2g)을 첨가해서 100℃에서 2시간 반응시켰다. 반응액에 물(300㎖), 아세트산 에틸(200㎖)을 첨가해서 분액하고, 유기층을 농축후, 48질량% 수산화 나트륨 수용액(23g), 에탄올(50㎖), 물(50㎖)을 첨가하고, 2시간 반응시켰다. 반응액을 1N HCl 수용액(500㎖)에 투입하고, 석출한 결정을 여과, 수세해서 카르복실산 조체를 얻은 후, 폴리인산 30g을 첨가해서 170℃에서 30분 반응시켰다. 반응액을 물(300㎖)에 투입하고, 아세트산 에틸(300㎖)을 첨가해서 분액하고, 유기층을 농축한 후 실리카겔 컬럼 크로마토그래피로 정제하고, 케톤 화합물(10g)을 얻었다. 2-naphthol (20 g) was dissolved in N, N-dimethylacetamide (150 ml), potassium carbonate (28.7 g) and 2-bromooctanoate ethyl (52.2 g) were added and reacted at 100 ° C for 2 hours. Water (300 ml) and ethyl acetate (200 ml) were added to the reaction mixture, and the organic layer was concentrated, followed by addition of 48% by mass aqueous sodium hydroxide solution (23 g), ethanol (50 ml), and water (50 ml). , And reacted for 2 hours. The reaction solution was poured into a 1N HCl aqueous solution (500 mL), and the precipitated crystals were filtered and washed to obtain a carboxylic acid composition, and 30 g of polyphosphoric acid was added to react at 170 ° C for 30 minutes. The reaction solution was poured into water (300 mL), ethyl acetate (300 mL) was added and separated, and the organic layer was concentrated and purified by silica gel column chromatography to obtain a ketone compound (10 g).
얻어진 케톤 화합물(10.0g), 메탄올(100㎖)의 현탁 용액에 아세트산 나트륨(30.6g), 염산 히드록실아민(25.9g), 황산 마그네슘(4.5g)을 첨가하고, 24시간 가열 환류했다. 방냉 후, 물(150㎖), 아세트산 에틸(150mL)을 첨가해서 분액하고, 유기층을 물 80㎖로 4회 분액하고, 농축한 후 실리카겔 컬럼 크로마토그래피로 정제해서 옥심 화합물(5.8g)을 얻었다.Sodium acetate (30.6 g), hydroxylamine hydrochloride (25.9 g), and magnesium sulfate (4.5 g) were added to the suspension solution of the obtained ketone compound (10.0 g) and methanol (100 mL), followed by heating to reflux for 24 hours. After cooling, water (150 mL) and ethyl acetate (150 mL) were added for separation, and the organic layer was partitioned four times with 80 mL of water, concentrated and purified by silica gel column chromatography to obtain an oxime compound (5.8 g).
얻어진 옥심(3.1g)에 대해서 B-6과 마찬가지로 술포네이트화를 행하고, B-7(상술의 구조) 3.2g을 얻었다.The obtained oxime (3.1 g) was sulfonated similarly to B-6, and 3.2 g of B-7 (structure described above) was obtained.
또한, B-7의 1H-NMR 스펙트럼(300MHz, CDCl3)은 δ=8.3(d,1H), 8.0(d,2H), 7.9(d,1H), 7.8(d,1H), 7.6(dd,1H), 7.5(dd,1H) 7.3(d,2H), 7.1(d.1H), 5.6(dd,1H), 2.4(s,3H), 2.2(ddt,1H), 1.9(ddt,1H), 1.4∼1.2(m,8H), 0.8(t,3H)이었다.In addition, 1 H-NMR spectrum of B-7 (300MHz, CDCl 3 ) is δ = 8.3 (d, 1H) , 8.0 (d, 2H), 7.9 (d, 1H), 7.8 (d, 1H), 7.6 ( dd, 1H), 7.5 (dd, 1H) 7.3 (d, 2H), 7.1 (d.1H), 5.6 (dd, 1H), 2.4 (s, 3H), 2.2 (ddt, 1H), 1.9 (ddt, 1H), 1.4 to 1.2 (m, 8H), and 0.8 (t, 3H).
<B-8의 합성><Synthesis of B-8>
B-6에 있어서의 p-톨루엔술포닐클로리드 대신에 벤젠술로닐클로리드를 사용한 이외는 B-6과 동일하게 해서 B-8(상술의 구조)을 합성했다. B-8 (structure described above) was synthesized in the same manner as B-6 except that benzenesulonyl chloride was used in place of p-toluenesulfonyl chloride in B-6.
또한, B-8의 1H-NMR 스펙트럼(300MHz, CDCl3)은 δ=8.3(d,1H), 8.1(d,2H), 7.9(d,1H), 7.8(d,1H), 7.7-7.5(m,4H), 7.4(dd,1H), 7.1(d.1H), 5.6(q,1H), 1.7(d,3H)이었다.In addition, the 1-8 H-NMR spectrum of B-8 (300MHz, CDCl 3 ) is δ = 8.3 (d, 1H), 8.1 (d, 2H), 7.9 (d, 1H), 7.8 (d, 1H), 7.7- 7.5 (m, 4H), 7.4 (dd, 1H), 7.1 (d.1H), 5.6 (q, 1H), 1.7 (d, 3H).
B-9:TPS-1000(미도리 카가쿠사제)B-9: TPS-1000 (Midori Kagaku Corporation)
NQD:4,4'-[1-[4-[1-[4-히드록시페닐]-1-메틸에틸]페닐]에틸리덴]비스페놀(1.0몰)과 1,2-나프토퀴논디아지드-5-술폰산 클로리드(2.0몰)의 축합물NQD: 4,4 '-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol (1.0 mol) and 1,2-naphthoquinonediazide- Condensate of 5-sulfonic acid chloride (2.0 mol)
E-1:DBA(9,10-디부톡시안트라센, 가와사키 카세이 고교제)E-1: DBA (9,10-dibutoxyanthracene, Kawasaki Kasei high school)
E-2:NBCA(쿠로가네 카세이(주)제)E-2: NBCA (Kurogane Kasei Co., Ltd.)
F-1:JER157S65(상품명, 페놀노볼락형 에폭시 수지, 재팬 에폭시레진(주)제)F-1: JER157S65 (brand name, phenol novolac type epoxy resin, made by Japan Epoxy Resin Co., Ltd.)
F-2:니카락 MW-100LM(산와 케미컬(주)제)F-2: Nikarak MW-100LM (manufactured by Sanwa Chemical Co., Ltd.)
F-3:EX-111(나가세 켐텍스사제)F-3: EX-111 (manufactured by Nagase Chemtex)
F-4:EX-212L (나가세 켐텍스사제)F-4: EX-212L (manufactured by Nagase Chemtex)
F-5:카야라드 DPHA(니폰 카야쿠사제)F-5: Kayarad DPHA (manufactured by Nippon Kayaku Co., Ltd.)
G-1:KBM-403(상품명, 3-글리시독시프로필트리메톡시실란, 하기에 나타내는 구조, 신에츠 카가쿠 고교(주)제)G-1: KBM-403 (brand name, 3-glycidoxypropyl trimethoxysilane, structure shown below, Shin-Etsu Chemical Co., Ltd. product)
G-2:KBE-403(상품명, 3-글리시독시프로필트리에톡시실란, 신에츠 카가쿠 고교(주)제)G-2: KBE-403 (trade name, 3-glycidoxypropyl triethoxysilane, manufactured by Shin-Etsu Chemical Co., Ltd.)
G-3:KBE-1003(상품명, 비닐트리에톡시실란, 신에츠 카가쿠 고교(주)제)G-3: KBE-1003 (brand name, vinyl triethoxysilane, Shin-Etsu Chemical Co., Ltd. product)
G-4:KBM-502(상품명, 3-메타크릴옥시프로필디메톡시실란, 신에츠 카가쿠 고교(주)제)G-4: KBM-502 (trade name, 3-methacryloxypropyl dimethoxysilane, manufactured by Shin-Etsu Chemical Co., Ltd.)
G-5:KBM-5103(상품명, 3-아크릴옥시프로필트리메톡시실란, 신에츠 카가쿠 고교(주)제)G-5: KBM-5103 (brand name, 3-acryloxypropyl trimethoxysilane, manufactured by Shin-Etsu Chemical Co., Ltd.)
G-6:KBM-803(상품명, 3-메르캅토프로필트리메톡시실란, 신에츠 카가쿠 고교(주)제)G-6: KBM-803 (trade name, 3-mercaptopropyl trimethoxysilane, manufactured by Shin-Etsu Chemical Co., Ltd.)
G-7:KBM-903(상품명, 3-아미노프로필트리메톡시실란, 신에츠 카가쿠 고교(주)제)G-7: KBM-903 (trade name, 3-aminopropyl trimethoxysilane, manufactured by Shin-Etsu Chemical Co., Ltd.)
H-1:1,5-디아자비시클로[4.3.0]-5-노넨H-1: 1,5-diazabicyclo [4.3.0] -5-nonene
H-2:트리페닐이미다졸H-2: Triphenylimidazole
H-3:하기 구조H-3: The following structure
I-1:하기 구조식으로 나타내어지는 퍼플루오로알킬기 함유 비이온성 계면활성제I-1: Nonionic surfactant containing perfluoroalkyl group represented by the following structural formula
I-2:실리콘계 계면활성제 SH-8400(도레이 다우코닝 실리콘)I-2: Silicone surfactant SH-8400 (Toray Dow Corning Silicone)
이상에 의해 얻어진 실시예, 및 비교예의 감광성 수지 조성물에 대해서 이하에 나타내는 각 평가를 행했다.Each evaluation shown below was performed about the photosensitive resin composition of the Example obtained by the above and the comparative example.
<감도의 평가><Evaluation of sensitivity>
유리 기판(코닝 1737, 0.7mm 두께(코닝사제)) 상에 각 감광성 수지 조성물을 슬릿 도포한 후, 95℃/140초 핫플레이트 상에서 프리베이킹해서 용제를 휘발시켜 막두께 4.0㎛의 감광성 수지 조성물층을 형성했다.After slit-coating each photosensitive resin composition on a glass substrate (Corning 1737, 0.7 mm thickness (manufactured by Corning)), pre-baking on a hot plate at 95 ° C / 140 seconds to volatilize the solvent, the photosensitive resin composition layer having a thickness of 4.0 µm Formed.
이어서, 얻어진 감광성 수지 조성물층을 캐논(주)제 PLA-501F 노광기(초고압 수은 램프)를 사용하고, 소정의 마스크를 통해 노광했다. 그리고, 노광후의 감광성 조성물층을 알칼리 현상액(0.4중량%의 테트라메틸암모늄히드록시드 수용액)으로 23℃/60초간 현상한 후, 초순수로 20초 린스했다.Subsequently, the obtained photosensitive resin composition layer was exposed using a PLA-501F exposure machine (ultra high pressure mercury lamp) manufactured by Canon Co., Ltd. through a predetermined mask. Then, the photosensitive composition layer after exposure was developed with an alkali developer (0.4% by weight of tetramethylammonium hydroxide aqueous solution) for 23 ° C./60 seconds, and then rinsed with ultrapure water for 20 seconds.
이들의 조작에 의해 9㎛의 라인앤드스페이스를 1:1로 해상할 때의 최적 i선 노광량(Eopt)을 감도로 했다. 또한, 평가 기준은 하기와 같다. 3∼5가 실용상 문제 없는 레벨이다.The optimum i-line exposure amount (Eopt) when resolving a 9 µm line and space 1: 1 by these operations was defined as sensitivity. In addition, evaluation criteria are as follows. 3 to 5 are practically no problem levels.
5:40mJ/㎠ 미만Less than 5: 40mJ / ㎠
4:40mJ/㎠ 이상 60mJ/㎠ 미만4: 40mJ / ㎠ to 60mJ / ㎠
3:60mJ/㎠ 이상 80mJ/㎠ 미만3:60 mJ / cm2 or more and less than 80 mJ / cm2
2:80mJ/㎠ 이상 150mJ/㎠ 미만2: 80 mJ / cm 2 or more and less than 150 mJ / cm 2
1:150mJ/㎠ 이상1: 150mJ / ㎠ or more
<잔막률의 평가><Evaluation of residual rate>
현상 후의 미노광부의 막두께를 측정하고, 도포 후의 막두께에 대한 비율(현상 후의 미노광부 막두께÷도포 후의 막두께×100(%))을 구함으로써 현상시의 잔막률을 하기 기준으로 평가했다.By measuring the film thickness of the unexposed portion after development, and obtaining the ratio to the film thickness after application (film thickness after undeveloped portion ÷ film thickness after application x 100 (%)), the residual film rate during development was evaluated based on the following criteria. .
5:98% 이상5: 98% or more
4:95% 이상 98% 미만4: 95% or more but less than 98%
3:90% 이상 95% 미만3: 90% or more but less than 95%
2:80% 이상 90% 미만2: 80% or more and less than 90%
1:80% 미만Less than 1: 80%
<비유전율의 평가><Evaluation of relative dielectric constant>
베어웨이퍼(N형 저저항)(SUMCO사제) 상에 감광성 수지 조성물 용액을 슬릿 도포한 후, 90도에서 2분간 핫플레이트상에서 프리베이킹해서 막두께 3.0㎛의 감광성 수지 조성물층을 형성했다. 얻어진 감광성 수지 조성물을 캐논(주)제 PLA-501F 노광기(초고압 수은 램프)로 적산 조사량이 300mJ/㎠(조도:20mW/㎠)가 되도록 노광하고, 이 기판을 오븐에서 220℃에서 1시간 가열함으로써 경화막을 얻었다.After slit-coating a photosensitive resin composition solution on a bare wafer (N-type low resistance) (manufactured by SUMCO), it was prebaked on a hot plate at 90 degrees for 2 minutes to form a photosensitive resin composition layer having a thickness of 3.0 µm. The obtained photosensitive resin composition was exposed with a PLA-501F exposure machine (ultra high pressure mercury lamp) manufactured by Canon Co., Ltd. so that the accumulated irradiation amount was 300 mJ / cm 2 (roughness: 20 mW / cm 2), and the substrate was heated in an oven at 220 ° C. for 1 hour. A cured film was obtained.
이 경화막에 대해서 CVmap92A(Four Dimensions Inc.사제)를 사용하고, 측정 주파수 1MHz로 비유전율을 측정해서 하기 기준으로 평가했다. 이 값이 작을 때, 경화막의 비유전율은 양호하다고 할 수 있다.CVmap92A (manufactured by Four Dimensions Inc.) was used for this cured film, and the relative dielectric constant was measured at a measurement frequency of 1 MHz and evaluated according to the following criteria. When this value is small, it can be said that the relative dielectric constant of the cured film is good.
5:3.5 미만Less than 5: 3.5
4:3.5 이상 3.7 미만4: 3.5 or more and less than 3.7
3:3.7 이상 3.9 미만3: 3.7 or more and less than 3.9
2:3.9 이상 4.2 미만2: 3.9 or more and less than 4.2
1:4.2 이상1: 4.2 or higher
표에 나타내어지는 바와 같이, 실시예의 감광성 수지 조성물은 반복단위(a3)를 포함하므로 감광성 수지 조성물층이 유연해진다. 이 때문에, 현상액에 용해되기 쉬워져 기판, 노광기 중 어떤 것에도 상관없이 우수한 감도, 우수한 잔막률, 및 우수한 비유전율을 나타내고, 또한, 형성된 패턴의 형상도 우수한 것을 알 수 있었다. 한편, 반복단위(a3)를 포함하지 않는 비교예는 실시예와 비교해서 감도, 잔막성, 및 비유전율이 떨어지는 것을 알 수 있다.As shown in the table, since the photosensitive resin composition of the example contains a repeating unit (a3), the photosensitive resin composition layer becomes flexible. For this reason, it became easy to dissolve in the developer, showing excellent sensitivity, excellent residual film ratio, and excellent relative dielectric constant regardless of any of the substrate and the exposure machine, and the shape of the formed pattern was also excellent. On the other hand, it can be seen that the comparative example not including the repeating unit (a3) had a lower sensitivity, residual film property, and relative dielectric constant than the example.
[실시예 100][Example 100]
실시예 100에서는 실시예 24의 감광성 수지 조성물을 사용하고, 기판을 유리 기판(코닝 1737, 0.7mm 두께(코닝사제))으로부터 6inch 실리콘 웨이퍼로 변경한 이외는 실시예 1의 감광성 수지 조성물에 대해서 행한 것과 마찬가지로 감도, 잔막성, 및 비유전율을 평가한 결과 평가는 모두 5였다.In Example 100, the photosensitive resin composition of Example 24 was used, and the substrate was changed to a 6 inch silicon wafer from a glass substrate (Corning 1737, 0.7 mm thick (manufactured by Corning)) to the photosensitive resin composition of Example 1 As in the case of evaluation of sensitivity, residual film properties, and relative dielectric constant, all of the evaluations were 5.
[실시예 101][Example 101]
실시예 100과 동일한 고형성분에 대해서 프로필렌글리콜모노메틸에테르아세테이트/디에틸렌글리콜에틸메틸에테르/1,3-부틸렌글리콜디아세테이트=60/37/3(중량비)의 혼합 용매를 사용하고, 점도가 35mPa·s가 되도록 조정하고, 모든 도포를 스핀 코트로 한 것 이외는 실시예 100과 동일하게 평가했다. 실시예 1의 감광성 수지 조성물에 대해서 행한 것과 마찬가지로 감도, 잔막성, 및 비유전율을 평가한 결과 평가는 모두 5였다.For the same solid component as in Example 100, a mixed solvent of propylene glycol monomethyl ether acetate / diethylene glycol ethyl methyl ether / 1,3-butylene glycol diacetate = 60/37/3 (weight ratio) was used, and the viscosity was It adjusted to 35 mPa * s, and evaluated similarly to Example 100 except having made all the coatings into spin coat. As in the case of the photosensitive resin composition of Example 1, evaluation of sensitivity, residual film property, and relative dielectric constant was all evaluated.
[실시예 102][Example 102]
실시예 100의 감광성 수지 조성물을 사용하고, 노광기를 캐논(주)제 PLA-501F 노광기로부터 Nikon(주)제 FX-803M(gh-Line 스테퍼)로 변경한 이외는 실시예 1의 감광성 수지 조성물에 대해서 행한 것과 마찬가지로 감도, 잔막성, 및 비유전율을 평가한 결과 평가는 모두 5였다.To the photosensitive resin composition of Example 1 except that the photosensitive resin composition of Example 100 was used and the exposure machine was changed from a PLA-501F exposure machine made by Canon Co., Ltd. to a FX-803M (gh-Line stepper) manufactured by Nikon Co., Ltd. As for the evaluation, all of the evaluations were conducted as a result of evaluating the sensitivity, residual film properties, and relative dielectric constant.
[실시예 103][Example 103]
실시예 100의 감광성 수지 조성물을 사용하고, 노광기를 캐논(주)제 PLA-501F 노광기로부터 355nm 레이저 노광기로 변경해서 355nm 레이저 노광을 행한 이외는 실시예 1의 감광성 수지 조성물에 대해서 행한 것과 마찬가지로 감도를 평가했다. Sensitivity was similar to that performed for the photosensitive resin composition of Example 1 except that the photosensitive resin composition of Example 100 was used and the exposure machine was changed from a PLA-501F exposure machine made by Canon Co., Ltd. to a 355 nm laser exposure machine to perform 355 nm laser exposure. Evaluated.
또한, 355nm 레이저 노광기로서는 가부시키가이샤 브이테크놀로지사제의 「AEGIS」를 사용하고(파장 355nm, 펄스폭 6nsec), 노광량은 OPHIR사제의 「PE10B-V2」를 사용해서 측정한 결과 평가는 5였다. 또한, 실시예 1의 감광성 수지 조성물에 대해서 행한 것과 마찬가지로 잔막성, 및 비유전율을 평가한 결과 평가는 모두 5였다.In addition, as a 355 nm laser exposure machine, "AEGIS" manufactured by V Technology Co., Ltd. was used (wavelength 355 nm, pulse width 6 nsec). In addition, as in the case of the photosensitive resin composition of Example 1, evaluation of the residual film property and the relative dielectric constant was all evaluated.
[실시예 104][Example 104]
실시예 100의 감광성 수지 조성물을 사용하고, 노광기를 캐논(주)제 PLA-501F 노광기로부터 UV-LED 광원 노광기로 변경한 이외는 실시예 1의 감광성 수지 조성물에 대해서 행한 것과 마찬가지로 감도를 평가한 결과 평가는 5였다. 또한, 실시예 1의 감광성 수지 조성물에 대해서 행한 것과 마찬가지로 잔막성, 및 비유전율을 평가한 결과 평가는 모두 5였다.The sensitivity was evaluated in the same manner as for the photosensitive resin composition of Example 1 except that the photosensitive resin composition of Example 100 was used and the exposure machine was changed from a PLA-501F exposure machine made by Canon Corporation to a UV-LED light source exposure machine. The evaluation was 5. In addition, as in the case of the photosensitive resin composition of Example 1, evaluation of the residual film property and the relative dielectric constant was all evaluated.
[실시예 200][Example 200]
박막 트랜지스터(TFT)를 사용한 유기 EL 표시 장치를 이하의 방법으로 제작했다(도 1 참조). An organic EL display device using a thin film transistor (TFT) was produced by the following method (see Fig. 1).
유리 기판(6) 상에 보텀 게이트형의 TFT(1)를 형성하고, 이 TFT(1)를 덮는 상태로 Si3N4로 이루어지는 절연막(3)을 형성했다. 이어서, 이 절연막(3)에 여기에서는 도시를 생략한 콘택트 홀을 형성한 후, 이 콘택트 홀을 통해 TFT(1)에 접속되는 배선(2)(높이 1.0㎛)을 절연막(3) 상에 형성했다. 이 배선(2)은 TFT(1) 사이 또는 후공정에서 형성되는 유기 EL 소자와 TFT(1)를 접속하기 위한 것이다.A bottom
또한, 배선(2)의 형성에 의한 요철을 평탄화하기 위해서 배선(2)에 의한 요철을 메워 넣는 상태로 절연막(3) 상에 평탄화막(4)을 형성했다. 절연막(3) 상에의 평탄화막(4)의 형성은 실시예 16의 감광성 수지 조성물을 기판 상에 스핀 도포하고, 핫플레이트 상에서 프리베이킹(90℃×2분)한 후, 마스크 상으로부터 고압 수은등을 사용해서 i선(365nm)을 45mJ/㎠(조도 20mW/㎠) 조사한 후, 알칼리 수용액으로 현상해서 패턴을 형성하고, 230℃에서 60분간의 가열 처리를 행했다.Further, in order to flatten the unevenness due to the formation of the wiring 2, the planarization film 4 is formed on the insulating
감광성 수지 조성물을 도포할 때의 도포성은 양호하며, 노광, 현상, 소성 후에 얻어진 경화막에는 주름이나 크랙의 발생은 확인되지 않았다. 또한, 배선(2)의 평균 단차는 500nm, 제작한 평탄화막(4)의 막두께는 2,000nm이었다.The coatability at the time of applying the photosensitive resin composition was good, and no occurrence of wrinkles or cracks was observed in the cured film obtained after exposure, development and firing. Moreover, the average level difference of the wiring 2 was 500 nm, and the thickness of the produced flattening film 4 was 2,000 nm.
이어서, 얻어진 평탄화막(4) 상에 보텀 이미션형의 유기 EL 소자를 형성했다. 우선, 평탄화막(4) 상에 ITO로 이루어지는 제1전극(5)을 콘택트 홀(7)을 통해 배선(2)에 접속시켜서 형성했다. 그 후, 레지스트를 도포, 프리베이킹하고, 소망의 패턴의 마스크를 통해 노광하고, 현상했다. 이 레지스트 패턴을 마스크로 해서 ITO 애천트를 사용한 웨트 에칭에 의해 패턴 가공을 행했다. 그 후, 레지스트 박리액(리무버 100, AZ 일렉트로닉스 마테리얼즈사제)을 사용해서 상기 레지스트 패턴을 50℃에서 박리했다. 이렇게 해서 얻어진 제1전극(5)은 유기 EL 소자의 양극에 상당한다.Subsequently, a bottom emission type organic EL element was formed on the obtained planarization film 4. First, the first electrode 5 made of ITO was formed on the planarization film 4 by connecting to the wiring 2 through the contact hole 7. Thereafter, the resist was applied, prebaked, exposed through a mask of a desired pattern, and developed. Using this resist pattern as a mask, pattern processing was performed by wet etching using an ITO etchant. Thereafter, the resist pattern was peeled at 50 ° C using a resist stripper (remover 100, manufactured by AZ Electronics Materials). The first electrode 5 thus obtained corresponds to the anode of the organic EL element.
이어서, 제1전극(5)의 주변을 덮는 형상의 절연막(8)을 형성했다. 절연막(8)에는 실시예 100의 감광성 수지 조성물을 사용하고, 상기와 동일한 방법으로 절연막(8)을 형성했다. 이 절연막(8)을 설치함으로써 제1전극(5)과 이 후의 공정에서 형성하는 제2전극 사이의 쇼트를 방지할 수 있다.Next, an insulating film 8 having a shape covering the periphery of the first electrode 5 was formed. The photosensitive resin composition of Example 100 was used for the insulating film 8, and the insulating film 8 was formed in the same manner as above. By providing this insulating film 8, it is possible to prevent a short circuit between the first electrode 5 and the second electrode formed in a subsequent process.
또한, 진공 증착 장치내에서 소망의 패턴 마스크를 통해 정공 수송층, 유기 발광층, 전자 수송층을 순차 증착해서 설치했다. 이어서, 기판 상방의 전면에 Al로 이루어지는 제2전극을 형성했다. 얻어진 상기 기판을 증착기로부터 인출하고, 밀봉용 유리판과 자외선 경화형 에폭시 수지를 사용해서 서로 접합함으로써 밀봉했다.Further, a hole transport layer, an organic light emitting layer, and an electron transport layer were sequentially deposited through a desired pattern mask in a vacuum deposition apparatus. Next, a second electrode made of Al was formed on the entire surface above the substrate. The obtained board | substrate was taken out from the vapor deposition machine, and it sealed by bonding to each other using a sealing glass plate and an ultraviolet curing epoxy resin.
이상과 같이 해서, 각 유기 EL 소자에 이것을 구동하기 위한 TFT(1)가 접속해서 이루어지는 액티브 매트릭스형의 유기 EL 표시 장치가 얻어졌다. 구동 회로를 통해 전압을 인가한 결과 양호한 표시 특성을 나타내고, 신뢰성이 높은 유기 EL 표시 장치인 것을 알 수 있었다.As described above, an active matrix organic EL display device obtained by connecting
[실시예 201][Example 201]
일본 특허 제3321003호 공보의 도 1에 기재된 액티브 매트릭스형 액정 표시 장치에 있어서 층간 절연막으로서 경화막(17)을 이하와 같이 해서 형성하고, 실시예 201의 액정 표시 장치를 얻었다. In the active matrix type liquid crystal display device described in Fig. 1 of Japanese Patent No. 3321003, a cured
즉, 실시예 100의 감광성 수지 조성물을 사용하고, 상기 실시예 200에 있어서의 유기 EL 표시 장치의 평탄화막(4)의 형성 방법과 같은 방법으로 층간 절연막으로서 경화막(17)을 형성했다.That is, the photosensitive resin composition of Example 100 was used, and the cured
얻어진 액정 표시 장치에 대해서 구동 전압을 인가한 결과 양호한 표시 특성을 나타내고, 신뢰성이 높은 액정 표시 장치인 것을 알 수 있었다.As a result of applying a driving voltage to the obtained liquid crystal display device, it was found that the liquid crystal display device exhibits good display characteristics and is highly reliable.
1:TFT(박막 트랜지스터) 2:배선
3:절연막 4:평탄화막
5:제1전극 6:유리 기판
7:콘택트 홀 8:절연막
10:액정 표시 장치 12:백라이트 유닛
14,15:유리 기판 16:TFT
17:경화막 18:콘택트 홀
19:ITO 투명전극 20:액정
22:컬러 필터1: TFT (Thin Film Transistor) 2: Wiring
3: insulating film 4: flattened film
5: first electrode 6: glass substrate
7: Contact hole 8: Insulation film
10: liquid crystal display device 12: backlight unit
14, 15: Glass substrate 16: TFT
17: hard film 18: contact hole
19: ITO transparent electrode 20: liquid crystal
22: Color filter
Claims (18)
(B) 광산발생제, 및
(D) 용제를 함유하고,
상기 2가의 연결기는 -CR1 2-(R1은 수소원자 또는 메틸기를 나타낸다), -O-, -O-SO2-, -O-C(O)-, -C(O)-O-, -S-, -C(O)-, 치환기를 갖고 있어도 좋은 아미노기, 치환기를 갖고 있어도 좋은 페닐렌기, 및 하기 (iv)의 구조로부터 선택되어 임의로 조합되는 기인 것을 특징으로 하는 감광성 수지 조성물.
[식(iv) 중, z는 0∼5의 정수를 나타낸다](A) (a1) a repeating unit having an acid group protected by an acid-decomposable group, (a2) an oxiranyl group, an oxetanyl group, or -NH-CH 2 -OR (R is an alkyl group having 1 to 20 carbon atoms) A polymer component comprising a repeating unit having a crosslinkable group selected, and (a3) a repeating unit having a carboxyl group at the side chain end and having 6 to 20 or less atoms in the divalent linking group connecting the polymer main chain and the carboxyl group in the same or different polymer ,
(B) a photoacid generator, and
(D) contains a solvent,
The divalent linking group is -CR 1 2- (R 1 represents a hydrogen atom or a methyl group), -O-, -O-SO 2- , -OC (O)-, -C (O) -O-,- A photosensitive resin composition characterized by S-, -C (O)-, an amino group which may have a substituent, a phenylene group which may have a substituent, and a group selected from structures of (iv) below and optionally combined.
[In formula (iv), z represents the integer of 0-5]
상기 (A) 중합체 성분은 상기 반복단위(a2) 및 상기 반복단위(a3)를 포함하는 중합체를 갖는 것을 특징으로 하는 감광성 수지 조성물.According to claim 1,
The (A) polymer component is a photosensitive resin composition, characterized in that it has a polymer comprising the repeating unit (a2) and the repeating unit (a3).
상기 (A) 중합체 성분은 상기 반복단위(a1), 상기 반복단위(a2), 및 상기 반복단위(a3)를 포함하는 중합체를 갖는 것을 특징으로 하는 감광성 수지 조성물.The method of claim 1 or 2,
The polymer component (A) has a polymer comprising the repeating unit (a1), the repeating unit (a2), and the repeating unit (a3).
화학 증폭 포지티브형 감광성 수지 조성물인 것을 특징으로 하는 감광성 수지 조성물.The method of claim 1 or 2,
A photosensitive resin composition characterized by being a chemically amplified positive type photosensitive resin composition.
상기 반복단위(a3)는 일반식(i)∼(iii)으로 나타내어지는 반복단위를 1종 이상 포함하는 것을 특징으로 하는 감광성 수지 조성물.
[일반식(i)∼(iii) 중, R1은 수소원자 또는 메틸기를 나타내고, L은 원자수가 4 이상인 2가의 연결기를 나타내고, R2는 할로겐원자, 수산기 또는 탄소수 1∼3의 알킬기를 나타내고, n은 0∼4의 정수를 나타낸다]The method of claim 1 or 2,
The repeating unit (a3) is a photosensitive resin composition comprising at least one repeating unit represented by formulas (i) to (iii).
[In the general formulas (i) to (iii), R 1 represents a hydrogen atom or a methyl group, L represents a divalent linking group having 4 or more atoms, and R 2 represents a halogen atom, a hydroxyl group, or an alkyl group having 1 to 3 carbon atoms. , n represents the integer of 0-4]
상기 반복단위(a1)는 일반식(A2')으로 나타내어지는 반복단위인 것을 특징으로 하는 감광성 수지 조성물.
[일반식(A2') 중, R1 및 R2는 각각 수소원자, 알킬기 또는 아릴기를 나타내고, 적어도 R1 및 R2 중 어느 하나가 알킬기 또는 아릴기이며, R3은 알킬기 또는 아릴기를 나타내고, R1 또는 R2와, R3이 연결되어 환상 에테르를 형성해도 좋고, R4는 수소원자 또는 메틸기를 나타내고, X는 단결합 또는 아릴렌기를 나타낸다]The method of claim 1 or 2,
The repeating unit (a1) is a photosensitive resin composition, characterized in that the repeating unit represented by the general formula (A2 ').
[In the general formula (A2 '), R 1 and R 2 each represent a hydrogen atom, an alkyl group or an aryl group, at least one of R 1 and R 2 is an alkyl group or an aryl group, and R 3 represents an alkyl group or an aryl group, R 1 or R 2 and R 3 may be connected to form a cyclic ether, R 4 represents a hydrogen atom or a methyl group, and X represents a single bond or an arylene group]
상기 반복단위(a2)는 일반식(2)으로 나타내어지는 반복단위인 것을 특징으로 하는 감광성 수지 조성물.
[일반식(2) 중, R1은 수소원자 또는 메틸기를 나타내고, R2는 탄소수 1∼20의 알킬기를 나타낸다]The method of claim 1 or 2,
The repeating unit (a2) is a photosensitive resin composition, characterized in that the repeating unit represented by the general formula (2).
[In the general formula (2), R 1 represents a hydrogen atom or a methyl group, and R 2 represents an alkyl group having 1 to 20 carbon atoms]
상기 반복단위(a2)는 옥시라닐기 및/또는 옥세타닐기를 갖는 반복단위인 것을 특징으로 하는 감광성 수지 조성물.The method of claim 1 or 2,
The repeating unit (a2) is a photosensitive resin composition characterized in that it is a repeating unit having an oxiranyl group and / or an oxetanyl group.
상기 반복단위(a1)는 일반식(A2')으로 나타내어지는 반복단위이며, 상기 반복단위(a2)는 일반식(2)으로 나타내어지는 반복단위이며, 상기 반복단위(a3)는 일반식(i)∼(iii)으로 나타내어지는 반복단위를 1종 이상 포함하는 것을 특징으로 하는 감광성 수지 조성물.
[일반식(A2') 중, R1 및 R2는 각각 수소원자, 알킬기 또는 아릴기를 나타내고, 적어도 R1 및 R2 중 어느 하나가 알킬기 또는 아릴기이며, R3은 알킬기 또는 아릴기를 나타내고, R1 또는 R2와, R3이 연결되어 환상 에테르를 형성해도 좋고, R4는 수소원자 또는 메틸기를 나타내고, X는 단결합 또는 아릴렌기를 나타낸다]
[일반식(2) 중, R1은 수소원자 또는 메틸기를 나타내고, R2는 탄소수 1∼20의 알킬기를 나타낸다]
[일반식(i)∼(iii) 중, R1은 수소원자 또는 메틸기를 나타내고, L은 원자수가 4 이상인 2가의 연결기를 나타내고, R2는 할로겐원자, 수산기 또는 탄소수 1∼3의 알킬기를 나타내고, n은 0∼4의 정수를 나타낸다]The method of claim 1 or 2,
The repeating unit (a1) is a repeating unit represented by the general formula (A2 '), the repeating unit (a2) is a repeating unit represented by the general formula (2), and the repeating unit (a3) is the general formula (i )-(Iii), a photosensitive resin composition comprising at least one repeating unit.
[In the general formula (A2 '), R 1 and R 2 each represent a hydrogen atom, an alkyl group or an aryl group, at least one of R 1 and R 2 is an alkyl group or an aryl group, and R 3 represents an alkyl group or an aryl group, R 1 or R 2 and R 3 may be connected to form a cyclic ether, R 4 represents a hydrogen atom or a methyl group, and X represents a single bond or an arylene group]
[In the general formula (2), R 1 represents a hydrogen atom or a methyl group, and R 2 represents an alkyl group having 1 to 20 carbon atoms]
[In the general formulas (i) to (iii), R 1 represents a hydrogen atom or a methyl group, L represents a divalent linking group having 4 or more atoms, and R 2 represents a halogen atom, a hydroxyl group, or an alkyl group having 1 to 3 carbon atoms. , n represents the integer of 0-4]
상기 반복단위(a1)는 일반식(A2')으로 나타내어지는 반복단위이며, 상기 반복단위(a2)는 옥시라닐기 및/또는 옥세타닐기를 갖는 반복단위이며, 상기 반복단위(a3)는 일반식(i)∼(iii)으로 나타내어지는 반복단위를 1종 이상 포함하는 것을 특징으로 하는 감광성 수지 조성물.
[일반식(A2') 중, R1 및 R2는 각각 수소원자, 알킬기 또는 아릴기를 나타내고, 적어도 R1 및 R2 중 어느 하나가 알킬기 또는 아릴기이며, R3은 알킬기 또는 아릴기를 나타내고, R1 또는 R2와, R3이 연결되어 환상 에테르를 형성해도 좋고, R4는 수소원자 또는 메틸기를 나타내고, X는 단결합 또는 아릴렌기를 나타낸다]
[일반식(i)∼(iii) 중, R1은 수소원자 또는 메틸기를 나타내고, L은 원자수가 4 이상인 2가의 연결기를 나타내고, R2는 할로겐원자, 수산기 또는 탄소수 1∼3의 알킬기를 나타내고, n은 0∼4의 정수를 나타낸다]The method of claim 1 or 2,
The repeating unit (a1) is a repeating unit represented by the general formula (A2 '), the repeating unit (a2) is a repeating unit having an oxiranyl group and / or oxetanyl group, and the repeating unit (a3) is a general unit A photosensitive resin composition comprising at least one repeating unit represented by formulas (i) to (iii).
[In the general formula (A2 '), R 1 and R 2 each represent a hydrogen atom, an alkyl group or an aryl group, at least one of R 1 and R 2 is an alkyl group or an aryl group, and R 3 represents an alkyl group or an aryl group, R 1 or R 2 and R 3 may be connected to form a cyclic ether, R 4 represents a hydrogen atom or a methyl group, and X represents a single bond or an arylene group]
[In the general formulas (i) to (iii), R 1 represents a hydrogen atom or a methyl group, L represents a divalent linking group having 4 or more atoms, and R 2 represents a halogen atom, a hydroxyl group, or an alkyl group having 1 to 3 carbon atoms. , n represents the integer of 0-4]
상기 (A) 중합체 성분은 상기 반복단위(a1), 상기 반복단위(a2), 및 상기 반복단위(a3)를 포함하는 중합체를 갖고, 상기 반복단위(a1)는 일반식(A2')으로 나타내어지는 반복단위이며, 상기 반복단위(a2)는 일반식(2)으로 나타내어지는 반복단위이며, 상기 반복단위(a3)는 일반식(i)∼(iii)으로 나타내어지는 반복단위를 1종 이상 포함하는 것을 특징으로 하는 감광성 수지 조성물.
[일반식(A2') 중, R1 및 R2는 각각 수소원자, 알킬기 또는 아릴기를 나타내고, 적어도 R1 및 R2 중 어느 하나가 알킬기 또는 아릴기이며, R3은 알킬기 또는 아릴기를 나타내고, R1 또는 R2와, R3이 연결되어 환상 에테르를 형성해도 좋고, R4는 수소원자 또는 메틸기를 나타내고, X는 단결합 또는 아릴렌기를 나타낸다]
[일반식(2) 중, R1은 수소원자 또는 메틸기를 나타내고, R2는 탄소수 1∼20의 알킬기를 나타낸다]
[일반식(i)∼(iii) 중, R1은 수소원자 또는 메틸기를 나타내고, L은 원자수가 4 이상인 2가의 연결기를 나타내고, R2는 할로겐원자, 수산기 또는 탄소수 1∼3의 알킬기를 나타내고, n은 0∼4의 정수를 나타낸다]The method of claim 1 or 2,
The polymer component (A) has a polymer comprising the repeating unit (a1), the repeating unit (a2), and the repeating unit (a3), and the repeating unit (a1) is represented by the general formula (A2 '). Paper is a repeating unit, and the repeating unit (a2) is a repeating unit represented by general formula (2), and the repeating unit (a3) includes one or more repeating units represented by general formulas (i) to (iii). Photosensitive resin composition, characterized in that.
[In the general formula (A2 '), R 1 and R 2 each represent a hydrogen atom, an alkyl group or an aryl group, at least one of R 1 and R 2 is an alkyl group or an aryl group, and R 3 represents an alkyl group or an aryl group, R 1 or R 2 and R 3 may be connected to form a cyclic ether, R 4 represents a hydrogen atom or a methyl group, and X represents a single bond or an arylene group]
[In the general formula (2), R 1 represents a hydrogen atom or a methyl group, and R 2 represents an alkyl group having 1 to 20 carbon atoms]
[In the general formulas (i) to (iii), R 1 represents a hydrogen atom or a methyl group, L represents a divalent linking group having 4 or more atoms, and R 2 represents a halogen atom, a hydroxyl group, or an alkyl group having 1 to 3 carbon atoms. , n represents the integer of 0-4]
상기 (A) 중합체 성분은 상기 반복단위(a1), 상기 반복단위(a2), 및 상기 반복단위(a3)를 포함하는 중합체를 갖고, 상기 반복단위(a1)는 일반식(A2')으로 나타내어지는 반복단위이며, 상기 반복단위(a2)는 옥시라닐기 및/또는 옥세타닐기를 갖는 반복단위이며, 상기 반복단위(a3)는 일반식(i)∼(iii)으로 나타내어지는 반복단위를 1종 이상 포함하는 것을 특징으로 하는 감광성 수지 조성물.
[일반식(A2') 중, R1 및 R2는 각각 수소원자, 알킬기 또는 아릴기를 나타내고, 적어도 R1 및 R2 중 어느 하나가 알킬기 또는 아릴기이며, R3은 알킬기 또는 아릴기를 나타내고, R1 또는 R2와, R3이 연결되어 환상 에테르를 형성해도 좋고, R4는 수소원자 또는 메틸기를 나타내고, X는 단결합 또는 아릴렌기를 나타낸다]
[일반식(i)∼(iii) 중, R1은 수소원자 또는 메틸기를 나타내고, L은 원자수가 4 이상인 2가의 연결기를 나타내고, R2는 할로겐원자, 수산기 또는 탄소수 1∼3의 알킬기를 나타내고, n은 0∼4의 정수를 나타낸다]The method of claim 1 or 2,
The polymer component (A) has a polymer comprising the repeating unit (a1), the repeating unit (a2), and the repeating unit (a3), and the repeating unit (a1) is represented by the general formula (A2 '). Paper is a repeating unit, and the repeating unit (a2) is a repeating unit having an oxiranyl group and / or an oxetanyl group, and the repeating unit (a3) is a repeating unit represented by general formulas (i) to (iii) 1 A photosensitive resin composition comprising at least a species.
[In the general formula (A2 '), R 1 and R 2 each represent a hydrogen atom, an alkyl group or an aryl group, at least one of R 1 and R 2 is an alkyl group or an aryl group, and R 3 represents an alkyl group or an aryl group, R 1 or R 2 and R 3 may be connected to form a cyclic ether, R 4 represents a hydrogen atom or a methyl group, and X represents a single bond or an arylene group]
[In the general formulas (i) to (iii), R 1 represents a hydrogen atom or a methyl group, L represents a divalent linking group having 4 or more atoms, and R 2 represents a halogen atom, a hydroxyl group, or an alkyl group having 1 to 3 carbon atoms. , n represents the integer of 0-4]
(2) 적용된 감광성 수지 조성물로부터 용제를 제거하는 공정,
(3) 활성 방사선으로 노광하는 공정,
(4) 수성 현상액으로 현상하는 공정, 및
(5) 열경화하는 포스트 베이킹 공정을 포함하는 것을 특징으로 하는 경화막의 제조 방법.(1) The step of applying the photosensitive resin composition according to item 1 or 2 on a substrate,
(2) process of removing the solvent from the applied photosensitive resin composition,
(3) Process of exposing with active radiation,
(4) Process for developing with an aqueous developer, and
(5) A method for producing a cured film comprising a post-baking step of thermosetting.
상기 현상 공정 후이고 상기 포스트 베이킹 공정 전에, 전면 노광하는 공정을 포함하는 것을 특징으로 하는 경화막의 제조 방법.The method of claim 13,
After the developing step and before the post-baking step, a method of manufacturing a cured film comprising the step of exposing the entire surface.
층간 절연막인 것을 특징으로 하는 경화막.The method of claim 15,
A cured film, which is an interlayer insulating film.
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JP6136787B2 (en) * | 2013-09-05 | 2017-05-31 | Jsr株式会社 | Radiation sensitive resin composition for forming insulating film of display element, method for preparing the composition, insulating film for display element, method for forming the insulating film, and display element |
JP6147218B2 (en) * | 2014-03-26 | 2017-06-14 | 富士フイルム株式会社 | Photosensitive resin composition, method for producing cured film, cured film, liquid crystal display device, organic EL display device, touch panel display device |
JP6622479B2 (en) * | 2015-03-31 | 2019-12-18 | 住友化学株式会社 | Resist composition and method for producing resist pattern |
JP6782102B2 (en) | 2015-06-26 | 2020-11-11 | 住友化学株式会社 | Resist composition |
JP6864994B2 (en) * | 2015-06-26 | 2021-04-28 | 住友化学株式会社 | Resist composition |
JP6632636B2 (en) * | 2016-01-26 | 2020-01-22 | 富士フイルム株式会社 | Surface-modified inorganic substance and method for producing the same, resin composition, heat conductive material, and device |
KR102635564B1 (en) * | 2016-05-03 | 2024-02-08 | 동우 화인켐 주식회사 | Positive photosensitive resist composition and insulation layer prepared from the same |
KR102539889B1 (en) * | 2016-08-11 | 2023-06-05 | 동우 화인켐 주식회사 | Chemically amplified photosensitive resist composition and insulation layer prepared from the same |
TWI799484B (en) * | 2018-12-25 | 2023-04-21 | 奇美實業股份有限公司 | Chemically amplified positive photosensitive resin composition and application thereof |
JP7424788B2 (en) * | 2019-10-04 | 2024-01-30 | 日鉄ケミカル&マテリアル株式会社 | Curable resin composition containing siloxane resin, cured film thereof, and method for producing siloxane resin |
CN117590695B (en) * | 2023-11-29 | 2024-07-30 | 深圳市道尔顿电子材料股份有限公司 | Low-temperature-curable negative photosensitive resin composition, hardening film and preparation method thereof |
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