KR102092336B1 - Photoresist stripper composition - Google Patents

Abstract

The present invention relates to a photoresist stripper composition comprising (a) a compound represented by Formula 1, (b) an alkali-based compound, and (c) a water-soluble organic solvent. The photoresist stripper composition of the present invention has superior peel strength and solubility compared to a single alkali-based compound or an organic solvent with the effect of Formula 1, which has both the peel strength and the ability to improve the solubility, thereby reducing the cost of additional materials. Can simplify the strip process. In addition, it is possible to process a large number of substrates in the manufacturing process of a flat panel display device, so that a high yield can be expected, and accordingly, it can greatly contribute to cost reduction.

Description

Photoresist stripper composition {PHOTORESIST STRIPPER COMPOSITION}

The present invention relates to a photoresist stripper composition in a manufacturing process for a flat panel display substrate.

Photoresist is a chemical film that can form a fine pattern pre-drawn on a photomask on a desired substrate using a photochemical reaction by light, and is a polymer material applied to exposure technology together with a photomask. It is recognized as a major factor that directly affects the integration density and determines the ultimate resolution limit. According to Moore's law (the theory that the density of semiconductors doubles every two years), in order to put the density of circuits that increase every year into semiconductors of a limited size, the designed circuits must be patterned smaller. Increasing semiconductor integration is inevitably demanding the development of new photoresists.

In order to manufacture a high-resolution flat panel display, a photolithography process in which a fine wiring is formed on a substrate using such a photoresist is generally used, which applies a photoresist to the substrate using thermal, mechanical, and chemical properties of the photoresist. After that, exposure to light of a constant wavelength (exposure), dry or wet etching is a method.

In the fine patterning technology using a photoresist, a field that has been emphasized with the development of a new photoresist is a resist stripper (or photoresist remover). The photoresist must be removed by a solvent called a stripper (or photoresist remover) after the photolithography process is completed. This is an unnecessary photoresist layer after the etching process, and a metal residue remaining on the substrate through the etching and washing process, or This is because the deteriorated photoresist residue causes problems such as a decrease in yield in semiconductor manufacturing.

Accordingly, there is a demand for a peeling liquid having a removal power for the etching residue generated after the etching process. Furthermore, in order to secure price competitiveness, a stripper having economical efficiency such as an increase in the number of substrates is required.

In general, water-soluble organic amines such as ethanolamine and monoisopropanolamine, and organic solvents such as gamma butyllactone and DMSO are used to remove the photoresist. In addition, various types of corrosion inhibitors such as catechol, lesocinol, and benzotriazole are generally used to suppress corrosion of metals generated by amines, and a photoresist stripper composition containing the same has been proposed.

However, conventional photoresist stripper compositions are known to have problems such as corrosion performance, number of treatments, and stability problems in processing or long-term storage. For example, Korean Patent Registration No. 10-0950779 discloses a stripper composition comprising tertiary alkanolamine, water, and a cyclic organic solvent, but the stripper composition has a peel force when the curing degree of the photoresist becomes stronger. Even if it is rapidly falling and a polar solvent is added, there is a problem in that there is a risk of re-adhesion because the modified photoresist is not broken into pieces, and thus there is a limitation that it cannot be peeled off quickly.

Republic of Korea Registered Patent No. 10-0950779

In order to solve the problems of the prior art as described above, the present invention has superior peel strength and dissolving power than a single alkali-based compound or an organic solvent, thereby reducing the cost of additional materials and increasing the number of substrates. An object of the present invention is to provide a photoresist stripper composition that is excellent in economic efficiency and capable of being peeled off quickly.

In order to achieve the above object, the present invention,

(a) a compound represented by Formula 1;

(b) alkali-based compounds; And

(c) A photoresist stripper composition comprising a water-soluble organic solvent is provided.

[Formula 1]

In Formula 1, R ₁ and R ₂ may be the same or different from each other, and independently hydrogen, a straight-chain or branched alkyl group, an aryl group, an alkenyl group, an alkoxy group, a hydroxy group, a hydroxyalkyl group, a carboxyl group, a phenyl group, or It may be an acetate group, or may be connected to each other to form a ring.

In one embodiment of the present invention, in Chemical Formula 1, R ₁ and R ₂ may be the same or different from each other, and independently hydrogen, a linear or branched alkyl group having 1 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, a carbon number It is an alkenyl group of 2 to 20, an alkoxy group of 1 to 20 carbon atoms, a hydroxy group, a hydroxyalkyl group of 1 to 20 carbon atoms, a carboxyl group, a phenyl group, or an acetate group, or an alkyl group of 1 to 20 carbon atoms or an aryl group of 6 to 20 carbon atoms. It can be connected to each other by an alkylidene group to form a ring.

In another embodiment of the present invention, the compound represented by the formula (a) (a) is 2-amino-N-methylacetamide, 2-amino-N, N-dimethylacetamide, 2-amino-N-ethyl-N One or two or more selected from the group consisting of -methyl-acetamide, 2-amino-N, N-diethylacetamide, 2-aminoacetamide, and 2-amino-N-methyl-N-phenylacetamide It can be a mixture.

Another embodiment of the present invention, based on the total weight of the composition (a) 0.01 to 20% by weight of a compound represented by Formula 1; (b) 0.1 to 20% by weight of an alkali-based compound; And (c) 60 to 99% by weight of a water-soluble organic solvent.

In another embodiment of the present invention, the (b) alkali-based compound is KOH, NaOH, TMAH (Tetramethyl ammonium hydroxide), TEAH (Tetraethyl ammonium hydroxide), carbonate, phosphate, ammonia and one selected from the group consisting of amines Or it may be two or more.

In another embodiment of the present invention, the (c) water-soluble organic solvent may be a quantum polar solvent, an aprotic polar solvent, or a mixture thereof.

Another embodiment of the present invention may be a photoresist stripper composition further comprising a corrosion inhibitor. As a specific example, the corrosion inhibitor may be one or two or more mixtures selected from the group consisting of organic acids, organic acid amide esters, azole compounds, quinone compounds and alkyl gallate compounds.

Another embodiment of the present invention may be a photoresist stripper composition further comprising deionized water.

The photoresist stripper composition of the present invention has superior peel strength and solubility compared to a single alkali-based compound or an organic solvent with the effect of Formula 1, which has both the peel strength and the ability to improve the solubility, thereby reducing the cost of additional materials. It can simplify the stripping process. In addition, it is possible to process a large number of substrates in the manufacturing process of a flat panel display device, so that a high yield can be expected, and accordingly, it can greatly contribute to cost reduction.

Hereinafter, the present invention will be described in detail.

The present invention, (a) a compound represented by the formula (1);

(b) alkali-based compounds; And

(c) Photoresist stripper composition comprising a water-soluble organic solvent.

Hereinafter, each component will be described in detail.

(a) Compound represented by Formula 1

The photoresist stripper composition of the present invention uses a compound represented by Formula 1 below.

[Formula 1]

In Formula 1, R ₁ and R ₂ may be the same or different from each other, and independently hydrogen, a straight-chain or branched alkyl group, an aryl group, an alkenyl group, an alkoxy group, a hydroxy group, a hydroxyalkyl group, a carboxyl group, a phenyl group, or It may be an acetate group, or may be connected to each other to form a ring. In more detail, R ₁ and R ₂ may be the same or different from each other, and independently hydrogen, a straight or branched alkyl group having 1 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms. , An alkoxy group having 1 to 20 carbon atoms, a hydroxy group, a hydroxyalkyl group having 1 to 20 carbon atoms, a carboxyl group, a phenyl group, or an acetate group, or an alkylidine group including an alkyl group having 1 to 20 carbon atoms or an aryl group having 6 to 20 carbon atoms It can be connected to form a ring.

The compound represented by Formula 1 is preferably 2-amino-N-methylacetamide, 2-amino-N, N-dimethylacetamide, 2-amino-N-ethyl-N-methyl-acetamide, 2- It may be one or a mixture of two or more selected from the group consisting of amino-N, N-diethylacetamide, 2-aminoacetamide, and 2-amino-N-methyl-N-phenylacetamide.

The compound represented by Chemical Formula 1 has an alkali-based compound structure having a peeling property and an amide-based organic solvent compound structure having a dissolving ability of a photoresist at the same time, bringing simplification of a peeling and cleaning composition and a manufacturing process using a peeling solution This simplifies and reduces the economic cost of additional materials. In addition, because it fills the shortage of the alkali-based compound and the water-soluble organic solvent, it is possible to expect a more excellent peeling effect and an improvement in dissolving ability when using each component alone, which can be expected in a high yield in the future flat panel display (FPD) manufacturing process. It is possible to reduce the tack time generated in the peeling process.

The compound represented by Formula 1 is preferably included in an amount of 0.01 to 20% by weight based on the total weight of the composition, and most preferably in an amount of 0.01 to 5% by weight to maximize the effect of the invention. If it exceeds 20% by weight, it is possible to corrode the metal surface by strengthening the aggression on the metal surface, and a cost saving effect may not be obtained.

(b) alkali-based compounds

The alkali-based compound strongly penetrates into the polymer matrix of a denatured or crosslinked photoresist under a variety of process conditions such as dry or wet etching, ashing or ion implant processing, and thus in-molecular or intermolecular It serves to break the bond that exists in By forming an empty space in a structurally vulnerable portion in the photoresist remaining on the substrate, the photoresist is transformed into an amorphous polymer gel mass, so that the photoresist attached to the substrate can be easily removed.

The alkali-based compounds are preferably KOH, NaOH, TMAH (Tetramethyl ammonium hydroxide), TEAH (Tetraethyl ammonium hydroxide), carbonates, phosphates, ammonia and amines, etc. These may be used alone or in combination of two or more. Can be used.

Among them, the amines include primary amines such as methylamine, ethylamine, monoisopropylamine, n-butylamine, sec-butylamine, isobutylamine, t-butylamine, and pentylamine; Secondary such as dimethylamine, diethylamine, dipropylamine, diisopropylamine, dibutylamine, diisobutylamine, methylethylamine, methylpropylamine, methylisopropylamine, methylbutylamine, methylisobutylamine Amine; Tertiary amines such as diethyl hydroxyamine, trimethylamine, triethylamine, tripropylamine, tributylamine, tripentylamine, dimethylethylamine, methyldiethylamine and methyldipropylamine; Choline, ethanolamine, diethanolamine, triethanolamine, monopropanolamine, 2-aminoethanol, 2- (ethylamino) ethanol, 2- (methylamino) ethanol, N-methyl diethanolamine, N, N-dimethylethanol Amine, N, N-diethylaminoethanol, 2- (2-aminoethylamino) -1-ethanol, 1-amino-2-propanol, 2-amino-1-propanol, 3-amino-1-propanol, 4 -Alkanolamines such as amino-1-butanol, dibutanolamine, diglycolamine, and monoisopropanolamine; (Butoxymethyl) diethylamine, (methoxymethyl) diethylamine, (methoxymethyl) dimethylamine, (butoxymethyl) dimethylamine, (isobutoxymethyl) dimethylamine, (methoxymethyl) diethanolamine , (Hydroxyethyloxymethyl) diethylamine, methyl (methoxymethyl) aminoethane, methyl (methoxymethyl) aminoethanol, methyl (butoxymethyl) aminoethanol, 2- (2-aminoethoxy) ethanol, etc. Alkoxyamine; 1- (2-hydroxyethyl) piperazine, 1- (2-aminoethyl) piperazine, 1- (2-hydroxyethyl) methylpiperazine, N- (3-aminopropyl) morpholine, 2-methyl Piperazine, 1-methylpiperazine, 1-amino-4-methylpiperazine, 1-benzyl piperazine, 1-phenyl piperazine, N-methylmorpholine, 4-ethylmorpholine, N-formylmorpholine, N And cyclic amines forming rings such as-(2-hydroxyethyl) morpholine and N- (3-hydroxypropyl) morpholine.

The alkali-based compound is preferably included in an amount of 0.1 to 20% by weight based on the total weight of the composition. If it is less than 0.1% by weight, the peeling power of the photoresist may decrease, and if it exceeds 20% by weight, damage to the metal surface may increase.

(c) Water-soluble organic solvent

The water-soluble organic solvent may be a quantum polar solvent, an aprotic polar solvent, or a mixture thereof.

The quantum polar solvent is preferably ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, Diethylene glycol monoethyl ether, diethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol Cole monoisopropyl ether, triethylene glycol monobutyl ether, polyethylene glycol monomethyl ether, polyethylene glycol monobutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene Glycol monomethyl ether, ethylene glycol dimethyl ether, diethylene glycol dime Ether compounds, such as ether, triethylene glycol dimethyl ether, diethylene glycol methyl ethyl ether, diethylene glycol methyl ether, triethylene glycol methyl ether, propylene glycol monomethyl ether acetate; Alkyl glycols such as diethylene glycol, methyl diglycol, butyl diglycol, triethylene glycol, and isopropyl glycol; Alcohols such as tetrahydrofurfuryl alcohol, perfuryl alcohol diacetone alcohol, ethylene glycol, and glycerin; Pyrrolidone compounds such as N-methyl pyrrolidone (NMP) and N-ethyl pyrrolidone; Imidazolidinone compounds such as 1,3-dimethyl-2-imidazolidinone and 1,3-dipropyl-2-imidazolidinone; lactone compounds such as γ-butyrolactone; Sulfoxide compounds such as dimethyl sulfoxide (DMSO) and sulfolane; Phosphate compounds such as triethyl phosphate and tributyl phosphate; Carbonate compounds such as dimethyl carbonate and ethylene carbonate; Formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, N- (2-hydroxyethyl) acetamide, 3-methoxy And amide compounds such as -N, N-dimethylpropionamide, 3- (2-ethylhexyloxy) -N, N-dimethylpropionamide, 3-butoxy-N, N-dimethylpropionamide, and dimethyllactamide. These may be used alone or in combination of two or more.

The quantum polar solvent further increases the dissolution rate of the photoresist swollen and dispersed by the stripper and helps to strengthen the rinse force in the DI water rinse process used after cleaning the stripper. Since it helps the role of cleanly rinsing the solvent containing the photoresist dispersed after the peeling process with deionized water, the DI rinsing process time can be shortened, there is no residual foreign matter, and it also helps to improve the yield. In addition, as one of the problems that may appear on the metal film, when a quantum polar solvent is added to the stain, the problem related to the stain can be solved because it is cleanly removed in the deionized water rinse process.

The aprotic polar solvent is preferably a pyrrolidone compound such as N-methyl pyrrolidone (NMP), N-ethyl pyrrolidone; Imidazolidinone compounds such as 1,3-dimethyl-2-imidazolidinone and 1,3-dipropyl-2-imidazolidinone; lactone compounds such as γ-butyrolactone; Sulfoxide compounds such as dimethyl sulfoxide (DMSO) and sulfolane; Phosphate compounds such as triethyl phosphate and tributyl phosphate; Carbonate compounds such as dimethyl carbonate and ethylene carbonato; Formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, N- (2-hydroxyethyl) acetamide, 3-methoxy And amide compounds such as -N, N-dimethylpropionamide, 3- (2-ethylhexyloxy) -N, N-dimethylpropionamide, and 3-butoxy-N, N-dimethylpropionamide. It can be used alone or in combination of two or more.

The aprotic polar solvent serves to dissolve the resist polymer gelled by the alkali-based compound, and facilitates the dispersion of the photoresist so that it is solvated, so it is a very effective organic solvent for dissolving the photoresist. It is a component that improves the peeling performance by rapidly penetrating the organic amine compound into the solidified photoresist. In addition, it is easy to remove the stripping solution by deionized water in the rinsing process of the deionized water after stripping the photoresist, thereby minimizing re-adsorption / re-adhesion of the stripping solution and dissolved photoresist. The water-soluble polar solvent is preferably not too high or low boiling point for a suitable peel force, it can be used in combination.

The water-soluble organic solvent is preferably included in 60% to 99% by weight relative to the total weight of the composition. If the content is less than 60% by weight, the ability to contain the photoresist dissolved in the solution may drop, and the ability to process the water may decrease, and if it exceeds 99% by weight, the content of other components decreases, thereby affecting metal corrosion and peeling strength. have.

(d) Corrosion inhibitor

The stripper composition of the present invention may further include a corrosion inhibitor.

Types of corrosion inhibitors include monocarboxylic acids such as formic acid, acetic acid and propionic acid, dicarboxylic acids such as oxalic acid, malonic acid, succinic acid, glutanoic acid, adipic acid, pimelic acid, maleic acid, furmaic acid and glutaconic acid. , Tricarboxylic acids such as trimellitic acid and tricarbalic acid, and organic acids such as hydroxycarboxylic acid, lactic acid, salicylic acid, malic acid, tartaric acid, citric acid and oxycarboxylic acids such as gluconic acid; Succinic amide ester, maleic amide ester, maleic amide ester, fumaric amide ester, oxalic amide ester, malonic amide ester, glutaric amide ester, acetic amide ester, lactic amide ester, citric amide ester, tar Organic acid amide esters such as taric amide ester, glucolic amide ester, formic amide ester and uric amide ester; Benzotriazole, tolytriazole, methyl tolytriazole, 2,2 '-[[[benzotriazole] methyl] imino] bisethanol, 2,2'-[[[methyl-1 hydrogen-benzotria Zol-1-yl] methyl] imino] bismethanol, 2,2 '-[[[ethyl-1hydrogen-benzotriazol-1-yl] methyl] imino] bisethanol, 2,2'-[[ [Methyl-1 hydrogen-benzotriazol-1-yl] methyl] imino] bisethanol, 2,2 '-[[[methyl-1hydrogen-benzotriazol-1-yl] methyl] imino] biscarboxylic acid , 2,2 '-[[[methyl-1 hydrogen-benzotriazol-1-yl] methyl] imino] bismethylamine, 2,2'-[[[amine-1 hydrogen-benzotriazole-1- Azole compounds such as 1] methyl] imino] bisethanol; Quinone compounds such as 1,2-benzoquinone, 1,4-benzoquinone, 1,4-naphthoquinone, anthraquinone and catechol, pyrogallol, methylgallate, propylgallate, dodecylgallate, jade Alkyl gallate compounds such as tilgalate and gallic acid, and the like, but is not limited thereto. These can be used individually by 1 type or in mixture of 2 or more types.

The compound acts as a corrosion inhibitor, but is particularly excellent in solubility in water and a polar solvent, and therefore does not remain on the substrate surface, and thus has excellent corrosion protection ability of metal wiring metal wiring containing aluminum and / or copper, as well as of the peeling agent composition. Does not cause color change.

The corrosion inhibitor is preferably included in 0.001% by weight to 3% by weight relative to the total weight of the composition. If it is less than 0.001% by weight, corrosion may occur in the metal wiring made of aluminum or aluminum alloy and copper or copper alloy in the peeling or deionized water rinsing process, and if it exceeds 3% by weight, secondary contamination by adsorption of the surface of the metal wiring and A drop in peeling force may occur.

(e) deionized water

The deionized water contained in the photoresist stripper composition of the present invention improves the activation of the alkali-based compound to increase the removal rate of the photoresist, and is mixed with the water-soluble organic solvent and remains on the substrate during the rinsing process with deionized water. It has the effect of quickly and completely removing the organic contaminants and the photoresist stripper.

The deionized water is preferably included in an amount of more than 40% by weight to 60% by weight based on the total weight of the composition. If it exceeds 60% by weight, the dissolution capacity of the photoresist is reduced to affect the number of treatments, and in the case of long deposition of the substrate, corrosion of the metal wiring may be caused.

Hereinafter, the present invention will be described in more detail using Examples, Comparative Examples and Experimental Examples. However, the following examples, comparative examples and experimental examples are intended to illustrate the present invention, and the present invention is not limited by the following examples, comparative examples, and experimental examples, and can be variously modified and changed.

Example  1 to 8 and Comparative example  1 to 5: Photoresist Peeling solution  Preparation of the composition

The photoresist stripper composition was prepared by mixing the components and contents shown in Table 1 below.

division Formula 1 (% by weight) Alkali-based compound (% by weight) Quantum polar organic solvent (% by weight) Aprotic polar organic solvent (% by weight) Corrosion inhibitor (% by weight) Example 1 2-amino-N-ethyl-N-methyl acetamide 5 MIPA 0.1 EDG 84.9 DMSO 10 Example 2 2-aminoacetamide 5 TEA 0.3 BDG 88.7 NMP 6 Example 3 2-amino-N-methylacetamide 3 MDEA 0.4 MDG 86.6 NEP 10 Example 4 2-amino-N, N-dimethylacetamide One MEA 0.2 EDG 82.8 DMSO 15 BTA One Example 5 2-aminoacetamide 5 TEA 0.3 BDG 88.7 NMP 5 BTA One Example 6 2-amino-N-methylacetamide 3 MDEA 0.4 MDG 85.6 NEP 10 BTA One Example 7 2-amino-N, N-diethyl acetamide One DGA 0.3 TEG 89.7 NMP 8 BTA One Example 8 2-amino-N-ethyl-N-methyl acetamide 5 MIPA 0.1 IPG 73.9 NEP 20 BTA One Comparative Example 1 DGA 6 EDG 87 NMP 6 BTA One Comparative Example 2 MDEA 5 MDG 81 DMSO 13 BTA One Comparative Example 3 DEA 0.2 IPG 68.8 DMAC 30 BTA One Comparative Example 4 TEA 0.3 EDG 63.7 DMF 35 BTA One Comparative Example 5 DGA 0.3 MDG 58.7 NMF 40 BTA One

Note) MEA: Ethanolamine

TEA: triethanolamine

MDEA: methyldiethanolamine

DEA: diethanolamine

DGA: diglycolamine

MIPA: monoisopropanolamine

EDG: Diethylene glycol

MDG: methyldiglycol

BDG: Butyl Diglycol

TEG: triethylene glycol

IPG: isopropyl glycol

NMP: N-methylpyrrolidone

DMSO: Dimethyl sulfoxide

NEP: N-ethylpyrrolidone

DMAC: N, N-dimethylacetamide

DMF: N, N-dimethylformamide

NMF: N-methylformamide

< Experimental example  1> Peeling solution  Evaluation of peeling performance of the composition

In order to confirm the peeling effect of the photoresist stripper compositions of Examples 1 to 8 and Comparative Examples 1 to 5, after uniformly coating the photoresist with a film thickness of 1.2 μm through a spin coater on 10 × 10 glass, 10 minutes at 150 ° C. After curing, the substrate was prepared by cutting to 2x2 cm. After maintaining the temperature at 50 ° C. for the photoresist stripper compositions of Examples 1 to 8 and Comparative Examples 1 to 5 at a constant temperature, the substrate was immersed, and a scanning electron microscope (SEM, Hitach S-4700) was used to deposit the substrate. The modified or cured photoresist and dry etch residue removal performance were confirmed, and the time at which the cured photoresist was completely removed in the substrate was measured and shown in Table 2 below. Afterwards, cleaning was performed with deionized water for 1 minute to remove the stripping liquid remaining on the substrate, and the substrate was completely dried using nitrogen to remove deionized water remaining on the substrate after cleaning.

division Peeling time Weight percent of the solidified photoresist dissolved One% 2% 3% 4% 5% Example 1 30 sec ◎ ◎ ◎ ◎ ○ Example 2 20 sec ◎ ◎ ◎ ◎ ○ Example 3 40 sec ◎ ◎ ◎ ◎ ○ Example 4 30 sec ◎ ◎ ◎ ◎ ○ Example 5 20 sec ◎ ◎ ◎ ◎ ○ Example 6 40 sec ◎ ◎ ◎ ◎ ○ Example 7 40 sec ◎ ◎ ◎ ◎ ○ Example 8 20 sec ◎ ◎ ◎ ◎ ○ Comparative Example 1 5 min ◎ ○ △ X X Comparative Example 2 30 min ◎ ◎ ○ △ X Comparative Example 3 Not removed ◎ ◎ ◎ △ X Comparative Example 4 Not removed ◎ ◎ ◎ △ X Comparative Example 5 Not removed ◎ ◎ ◎ △ X

From the results shown in Table 2, the photoresist stripper compositions of Examples 1 to 8 of the present invention were exfoliated with excellent efficiency within 1 minute on all of the cured glass substrates, and exhibited a very rapid and excellent peeling effect.

However, the compositions of Comparative Examples 1 and 2, which do not contain Formula 1, have a peeling effect that is not good as compared to those of Examples 1 to 8, but also takes a long time to peel, and the compositions of Comparative Examples 3 to 5 are cured. The results showed that all the glass substrates could not be removed.

< Experimental example  2> Peeling solution  Evaluation of the number of treatments of the composition

To evaluate the number of substrate treatments of the photoresist stripper compositions of Examples 1 to 8 and Comparative Examples 1 to 5, solidified photoresist (solidified photoresist by removing all of the solvent through heat treatment at 130 ° C. for 72 hours) Mo / Al and Cu / Mo-Ti wiring boards after etching the metal film by wet etching and dry etching after forming a photoresist pattern on the stripper composition dissolved in 1, 2, 3, 4, and 5% by weight, respectively. Each was prepared. The stripper composition of Examples 1 to 8 and Comparative Examples 1 to 5 was kept at a temperature of 50 ° C., and then the substrate was immersed for 10 minutes, followed by washing and drying to perform a scanning electron microscope (SEM, Hitach S-). 4700), and the results are shown in Table 2 above. Very good was ◎, good was ○, normal was △, and bad was ×.

From the results shown in Table 2, the effect of the number of treatments of the photoresist stripper compositions of Examples 1 to 8 of the present invention was also excellent.

However, it was confirmed that the compositions of Comparative Examples 1 and 2, which do not include Formula 1, compared to the compositions of Examples 1 to 8 in the same amount, and the number of treatments rapidly decreased.

In addition, the compositions of Comparative Examples 3 to 5 showed the result of lowering the number of treatments compared to the compositions of Examples 1 to 8. And, as in Examples 4 to 8, in the composition containing the corrosion inhibitor, the corrosion resistance of aluminum or copper was better than the composition without the corrosion inhibitor, and thus the metal anticorrosive effect was very excellent.

Claims (9)

(a) a compound represented by the following formula (1);
(b) alkali-based compounds; And
(c) Photoresist stripper composition comprising a water-soluble organic solvent:
[Formula 1]

In Formula 1, R ₁ and R ₂ may be the same or different from each other, and independently hydrogen, a straight-chain or branched alkyl group, an aryl group, an alkenyl group, an alkoxy group, a hydroxy group, a hydroxyalkyl group, a carboxyl group, a phenyl group, or It may be an acetate group, or may be connected to each other to form a ring. The method according to claim 1,
(a) a compound represented by the following formula (1);
(b) alkali-based compounds; And
(c) Photoresist stripper composition comprising a water-soluble organic solvent:
[Formula 1]

In Chemical Formula 1, R ₁ and R ₂ may be the same as or different from each other, and independently hydrogen, a straight or branched alkyl group having 1 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, C1 to C20 alkoxy group, hydroxy group, C1 to C20 hydroxyalkyl group, carboxyl group, phenyl group, or acetate group, or C1 to C20 alkyl group or C6 to C20 aryl group containing aryl group connected to each other Can form a ring. The method according to claim 1,
The compound represented by the formula (a) is 2-amino-N-methylacetamide, 2-amino-N, N-dimethylacetamide, 2-amino-N-ethyl-N-methyl-acetamide, 2- Photoresist characterized by being a mixture of one or two or more selected from the group consisting of amino-N, N-diethylacetamide, 2-aminoacetamide, and 2-amino-N-methyl-N-phenylacetamide. Peeler composition. The method according to claim 1,
(A) 0.01 to 20% by weight of a compound represented by Formula 1 relative to the total weight of the composition; (b) 0.1 to 20% by weight of an alkali-based compound; And (c) 60 to 99% by weight of a water-soluble organic solvent. The method according to claim 1,
The (b) alkali-based compound is KOH, NaOH, TMAH (Tetramethyl ammonium hydroxide), TEAH (Tetraethyl ammonium hydroxide), carbonate, phosphate, ammonia and amines selected from the group consisting of one or two or more types of photo Resist stripper composition. The method according to claim 1,
The (c) water-soluble organic solvent is a quantum polar solvent, aprotic polar solvent, or a photoresist stripper composition, characterized in that a mixture thereof. The method according to claim 1,
(d) Photoresist stripper composition further comprising a corrosion inhibitor. The method according to claim 7,
The anti-corrosion agent is a photoresist stripper composition, characterized in that the mixture of one or two or more selected from the group consisting of organic acids, organic acid amide esters, azole-based compounds, quinone-based compounds and alkyl gallate compounds. The method according to claim 1,
(e) A photoresist stripper composition comprising deionized water.