KR102062471B1 - Film type probe card with vertical probe for RF chip test - Google Patents

Abstract

The present invention relates to a film type probe card with a vertical probe for RF chip testing. The present invention, spring fixing block; And a pair of probe structures corresponding to the pair of vertical MEMS probes formed at the rear end of the vertical MEMS probe formed in the spring fixing block and formed outside of the spring fixing block, wherein each pair is formed in a plurality. A vertical spring structure to enable driving; Characterized in that it comprises a.
This allows wafers produced by 5G and 28GHz RF chip manufacturing processes to be tested for defects, while minimizing wafer test marks, simplifying components to simplify manufacturing processes, and reducing manufacturing time and costs. Provides an effect that can be reduced.
In addition, the present invention, coupled to the test head (Test Head) of the tester (Tester) can solve the problem that the Fail Contact Mark is formed on the MEMS film as a contact mark when used in the inspection of the semiconductor device by the tester Provide effect.
In addition, the present invention, after fabricating only the probe in contact with the wafer through the micro-electromechanical systems (Micro-Electro Mechanical Systems), the components for alignment of the probe in the test is designed according to the customer's specifications The design provides a possible effect.

Description

Film type probe card with vertical probe for RF chip test}

The present invention relates to a film-type probe card having a vertical probe for RF chip test, and more specifically, to test the wafer produced according to the 5G, 28GHz RF chip manufacturing process to determine the defective product, A film type probe card with a vertical probe for RF chip testing to minimize wafer test marks, simplify components to simplify the manufacturing process, and reduce manufacturing time and cost.

1 is a view for explaining a problem when using a cantilever probe of the film type probe card for the RF chip test according to the prior art. That is, referring to FIG. 1, the cantilever probe Cp of FIG. 1A of the film type probe card for RF chip test is coupled to a test head of a tester, and used when testing a semiconductor device by the tester. As a contact mark such as 1b, a failure contact mark such as B regions (B1 and B2) at the bottom may be formed on the bonding pad 2 in addition to the success contact mark such as the upper A region. have.

On the other hand, there are many conventional techniques related to probe cards for wafer testing.

For example, Korean Patent Application No. 10-2007-0091224 "Probe Card for Wafer Test Probe Card for Wireless Interface Probe Card for High Speed One Shot Wafer Test and Semiconductor Test Device Having the Same (Wireless Interface Probe Card for High Speed One- shot wafer test and semiconductor testing apparatus having the same) "is a high-speed one-shot wafer test wireless interface probe card for performing one-shot testing of large-area semiconductor wafers at high speed through wireless data transmission and reception, and a semiconductor inspection apparatus having the same It is about.

In addition, Republic of Korea Patent Application No. 10-2008-0076529 "Head socket for to contact probe card and interface and wafer test apparatus including the same" (probe card) The present invention relates to a probe card connection head socket and an interface and a wafer test apparatus including the same, wherein the connection between the card and the test head is simple and at the same time preventing damage to the connector or the head socket when the probe card and the test head are connected.

In addition, Korean Patent Application No. 10-2017-0007898 "HYBRID PROBE CARD FOR COMPONENT MOUNTED WAFER TEST" is a hybrid for effectively testing three-dimensional wafers mounted parts It is about a probe card.

In addition, the Republic of Korea Patent Application No. 10-2008-0052181 "Probe card for testing wafer (Probe card for testing wafer)" is a frequency noise and test by forming a grid printed portion in the printed circuit portion of the probe card during the test of the wafer The present invention relates to a probe card for a wafer test, which reduces the leakage of current and increases the transfer speed of the test current, thereby increasing the accuracy of the fast test and the test.

However, the above techniques are all related to the probe card for wafer test, but it does not provide a test method when the height difference is more than a predetermined level due to the flatness of the wafer, and simplifies the manufacturing process for manufacturing the wafer test probe card, and the manufacturing time. And there is a limitation that can not provide a way to reduce the cost.

Korean Patent Application No. 10-2007-0091224 "Probe Card for Wafer Test Probe Card for Wireless Interface Probe Card for High Speed One-Shot Wafer Test and semiconductor testing apparatus having the same) " Korean Patent Application No. 10-2008-0076529 "Head socket for to contact probe card and interface and wafer test apparatus including there" Korean Patent Application No. 10-2017-0007898 "HYBRID PROBE CARD FOR COMPONENT MOUNTED WAFER TEST Republic of Korea Patent Application No. 10-2008-0052181 "Probe card for testing wafer"

The present invention is to solve the above problems, to test the wafers produced in accordance with the 5G, 28GHz RF chip manufacturing process to determine the defective product, minimize the wafer test marks, simplify the components manufacturing process To provide a film type probe card with a vertical probe for RF chip testing to simplify and reduce manufacturing time and cost.

In addition, the present invention is coupled to the test head of the tester (Test Head) to solve the problem that the Fail Contact Mark is formed in the MEMS film as a contact mark when used in the inspection of the semiconductor device by the tester (Tester) An object of the present invention is to provide a film type probe card having a vertical probe for testing an RF chip.

In addition, according to the present invention, only the probe in contact with the wafer is manufactured through Micro-Electro Mechanical Systems, and then, the component for the alignment of the probe in the test is designed according to the specification of the customer. To provide a film type probe card with a vertical probe for RF chip testing to enable it.

However, the objects of the present invention are not limited to the above-mentioned objects, and other objects not mentioned will be clearly understood by those skilled in the art from the following description.

In order to achieve the above object, a film type probe card having a vertical probe for testing an RF chip according to an embodiment of the present invention includes a spring fixing block; And a pair of probe structures corresponding to the pair of vertical MEMS probes formed at the rear end of the vertical MEMS probe formed in the spring fixing block and formed outside of the spring fixing block, wherein each pair is formed in a plurality. A vertical spring structure to enable driving; Characterized in that it comprises a.

In this case, the vertical MEMS probe is characterized in that at least one bump formed on one MEMS film at the same time contact.

On the other hand, the vertical MEMS probe, when contacting two or more bumps formed in one MEMS film at the same time, when the low resistance measurement (four-terminal measurement) method is used to determine the fine resistance such as COF, FPC of the measurement sample Each bump and line can be configured on the MEMS film to transfer current and voltage to one terminal, and the two terminals can be configured to apply equal pressure.

In addition, each of the bumps is formed through the MEMS film and formed on the surface of the MEMS film, characterized in that to form a pattern on the MEMS film.

Here, each of the bumps are composed of a GND plane, a Sigal plane, a GND plane, or a GND plane, and a Sig plane in the MEMS film when the bumps do not penetrate the MEM film, thereby securing RF characteristics. In this case, the MEMS film is responsible for the RF and contact characteristics, and the elastic body (pogo, rubber, wire, etc.) can control only the load.

Accordingly, the expected effect is that when the elastic part and the contact part are conventionally constructed in the MEMS film, problem 1 should be designed in consideration of RF characteristics and elasticity, and problem 2 is a high process cost, but the elastic part / contact part of the present invention When configured separately, the first improvement, the design is easy, and the second improvement has a process cost of 50% or more.

In addition, the vertical spring structure, characterized in that to provide an elastic structure.

In addition, the vertical spring structure includes a spring member inwardly in the cylindrical housing, the pressure acting from the lower end of the vertical MEMS probe to the top when contacting the wafer through the MEMS film of the vertical MEMS probe at the bottom A spring built-in housing for providing compression and decompression by means of an inner spring member; Characterized in that it comprises a.

Film type probe card having a vertical probe for testing the RF chip according to an embodiment of the present invention, the wafer produced according to the 5G, 28GHz RF chip manufacturing process to determine the defective product, but the wafer test marks Minimize the number of components, simplify the components to simplify the manufacturing process, and reduce the manufacturing time and cost.

In addition, a film-type probe card having a vertical probe for testing an RF chip according to another embodiment of the present invention is coupled to a test head of a tester and used when testing a semiconductor device by the tester. Mark (Contact Mark) provides the effect that can solve the problem that the Fail Contact Mark is formed on the MEMS film.

In addition, the film type probe card having a vertical probe for testing an RF chip according to another embodiment of the present invention may be manufactured only through micro-electromechanical systems after the probes contacting the wafer are manufactured. In the test, the components for the alignment of the probes can be designed to meet customer specifications.

1 is a view for explaining a problem when using a cantilever probe of the film type probe card for the RF chip test according to the prior art.
2 is a diagram illustrating a film type probe card 100 having a vertical probe for testing an RF chip according to an exemplary embodiment of the present invention.
3 is an enlarged cross-sectional view (FIG. 3A) of AA and a region A of the cut cross-sectional view of a film-type probe card 100 having a vertical probe for RF chip test according to an embodiment of the present invention (FIG. 3b).
4 is a view for explaining the relationship with the PCB circuit board 3 of the cross-sectional view of the film type probe card 100 having a vertical probe for RF chip test according to an embodiment of the present invention.
FIG. 5 is a view for explaining the structure of a wafer inspection film 1 to which a film type probe card 100 having a vertical probe for RF chip testing according to an embodiment of the present invention is applied for wafer inspection (FIG. It is a figure (FIG. 5C) which shows the state in which the vertical MEMS probe 120 contacted with 5A, FIG. 5B) and the film 1 for wafer inspection.
6 is a view for explaining that the plate 140 is not formed on the film type probe card 100 having a vertical probe for RF chip test according to an embodiment of the present invention.
7 to 9 are views for explaining that the plate 140 is formed on the film type probe card 100 having a vertical probe for the RF chip test according to an embodiment of the present invention.
FIG. 10 is a view illustrating a coating end 121 formed on a vertical MEMS probe 120 on a film type probe card 100 having a vertical probe for testing an RF chip according to an exemplary embodiment of the present invention.
FIG. 11 is a view for explaining another embodiment of the vertical MEMS probe 120 in the film type probe card 100 having the vertical probe for RF chip test according to the embodiment of the present invention.

Hereinafter, the detailed description of the preferred embodiment of the present invention will be described with reference to the accompanying drawings. In the following description of the present invention, detailed descriptions of well-known functions or configurations will be omitted when it is deemed that they may unnecessarily obscure the subject matter of the present invention.

2 is a diagram illustrating a film type probe card 100 having a vertical probe for testing an RF chip according to an exemplary embodiment of the present invention. 3 is an enlarged cross-sectional view (FIG. 3A) of AA and a region A of the cut cross-sectional view of a film-type probe card 100 having a vertical probe for RF chip test according to an embodiment of the present invention (FIG. 3b). 4 is a view for explaining the relationship with the PCB circuit board 3 of the cross-sectional view of the film type probe card 100 having a vertical probe for RF chip test according to an embodiment of the present invention. FIG. 5 is a view for explaining the structure of a wafer inspection film 1 to which a film type probe card 100 having a vertical probe for RF chip testing according to an embodiment of the present invention is applied for wafer inspection (FIG. It is a figure (FIG. 5C) which shows the state in which the vertical MEMS probe 120 contacted with 5A, FIG. 5B) and the film 1 for wafer inspection. 6 is a view for explaining that the plate 140 is not formed on the film type probe card 100 having a vertical probe for RF chip test according to an embodiment of the present invention. 7 to 9 are views for explaining that the plate 140 is formed on the film type probe card 100 having a vertical probe for the RF chip test according to an embodiment of the present invention. FIG. 10 is a view illustrating a coating end 121 formed on a vertical MEMS probe 120 on a film type probe card 100 having a vertical probe for testing an RF chip according to an exemplary embodiment of the present invention. 11 is a view for explaining another embodiment of the vertical MEMS probe 120 in the film type probe card 100 having the vertical probe for RF chip test according to an embodiment of the present invention.

First, referring to FIGS. 3 and 4, the film type probe card 100 having a vertical probe for testing an RF chip may include a spring fixing block 110, a vertical MEMS probe 120, and a vertical spring structure 130. And bumps 1-3 formed on the MEMS film 1-2 through the vertical MEMS probe 120. In the present invention, the vertical MEMS probe 120 is used for a probe card for RF chip test, and is overdrive 80 μm (movable upward by 80 μm in the F1 direction and the F2 direction), Contact Resistance 0.5 μs or less, Leakage 10 nA or less Therefore, it can provide the characteristic of Impedance 50ance.

More specifically, as shown in FIG. 5C, the vertical MEMS probe 120 may be in contact with the bumps 1-3 formed on the GND layer 1-1 and the signal layer 1-4 on the MEMS film 1-2. The connection pattern may be configured to serve as an interface to the PCB circuit board 3.

Meanwhile, referring to FIGS. 5A and 5B, the film 1 having the GND layer includes the GND layer 1-1, the MEMS film 1-2, the bump 1-3, and the signal layer 1. -4), bumps 1-3 correspond to wafer contacts.

3 and 4, the vertical spring structure 130 formed in the spring fixing block 110 has a vertical MEMS probe 120 at a rear end of the vertical MEMS probe 120 formed outside the spring fixing block 110. By forming a probe structure (100a) corresponding to one pair (pair), a plurality of each pair is formed so that each can be driven individually.

Meanwhile, the vertical MEMS probe 120 may simultaneously contact two or more bumps 1-3 formed on one MEMS film 1-2, and the bumps 1-3 may also contact the MEMS film 1-3. Each pattern can be comprised by penetrating through the thing, what was formed in the surface of the MEMS film 1-3, etc.

The vertical MEMS probe 120 may be manufactured based on MEMS (Micro-Electro Mechanical Systems), but may be manufactured using tungsten wire as a material.

Here, the vertical spring structure 130 may correspond to an elastic structure, and may include a spring-containing housing 131 and a first pressure providing end 132.

The elastomer structure in the present invention may be provided as a pogo pin, rubber, wire probe, MEMS probe, or the like.

The spring-embedded housing 131 includes a spring member inwardly in the cylindrical housing so that the bottom of the vertical MEMS probe 120 is in contact with the wafer through the MEMS film 1-2 of the bottom vertical MEMS probe 120. Compression and decompression by pressure acting from end to top may be provided through the inner spring member.

In addition, the first pressure providing end 132 moves to the upper end according to the compressive force provided through the spring member of the spring-integrated housing 131 to be in contact with the wire formed at the upper end, thereby providing an electric signal. When the compressive force provided through the spring member of the built-in housing 131 is released, it may move downward to release the contact with the wire formed at the upper end, thereby providing a function of cutting off the electrical signal transmission.

Accordingly, the vertical MEMS probe 120 may determine its own height through a structure having elasticity such as a spring inside the vertical spring structure 130 having a pogo pin structure.

That is, the vertical spring structure 130 is formed at the bottom to stably provide the vertical movement of the vertical MEMS probe 120 in contact with the wafer, while the RF chip test is unsuitable when the height difference of the flatness of the wafer is 10 μm or more. You can solve the problem.

In addition, in another embodiment of the present invention, at least one plate 140 determining a position relative to the vertical MEMS probe 120 and / or the vertical spring structure 130 may be configured as shown in FIGS. 7 to 8. .

That is, in FIG. 6, the plate 140 is not formed on the probe structure 100a corresponding to one pair of the vertical spring structure 130 at the rear end of the vertical MEMS probe 120 in the spring fixing block 110. In such a case, problems such as torsion and angle change between the vertical spring structure 130 and the vertical MEMS probe 120 may occur due to repeated use.

To this end, the vertical MEMS probe 120 has at least one layer in the horizontal direction inside the jig 4 formed to be spaced apart from the outer circumferential surface of the spring fixing block 110 with respect to the vertical MEMS probe 120 protruding out of the spring fixing block 110. The plate 140 may be formed in an area except for an area in which the 120 is linearly moved up and down.

In addition, the plate 140 is formed with respect to the vertical spring structure 130 formed in the spring fixing block 110, except for an area in which the spring-containing housing 131 is formed of at least one layer on the inner circumferential surface of the spring fixing block 110. Can be.

In this case, the inside of the inner circumferential surface of the spring fixing block 110 may be formed in a hollow structure, while the inside of the inner circumferential surface may be formed to fill the interior, but in this case, the spring fixing block ( 110) may need to be rebuilt.

Next, referring to FIG. 10, the lower end corresponding to the end of the vertical MEMS probe 120 is provided with a coating end 121, so that the coating end 121 has bumps corresponding to wafer contact portions on the wafer 1. 3) may act as a contact part of the MEMS film 1-2 formed at the bottom to provide an electric shock and abrasion reduction effect. In this case, the coating end 121 may be formed as a ceramic coaching layer for electrically conducting a probe (conductive, non-adhesive coating layer, electrical device, device, etc.) at the end of the contact part of the vertical MEMS probe 120. More specifically, the ceramic coating layer may be It may be composed of titanium nitride (TiN), it is preferable to use a CVD and plasma deposition method that applies a ceramic to the end of the vertical MEMS probe 120 corresponding to the substrate.

Next, referring to FIG. 11, a tension bar 121 is formed in an upper region of the vertical MEMS probe 120 in which the probe end 120a is formed, and performs a vertical movement of the upper and lower sides for the action and release of the pressure. Can be. In this case, the tension bar 121 may be provided with an external force to the upper portion for the action and release of the pressure to the lower pressure on the probe end (120a) of the vertical MEMS probe 120.

In the probe movement hole 123 of the vertical MEMS probe 120, when the pressure provided upward from the lower side of each tension bar 121 with respect to the probe end 120a is released, each probe end 120a is moved downward. It is preferable that the elastic spring 122 is further formed to maintain the original state, wherein the elastic spring 122 is preferably made of a conductive material.

On the other hand, the upper end 126 is the support end 125 of the probe hole 123 with respect to the elastic spring 122 by the downward pressure provided by the second pressure providing end 124 of the lower end of the tension bar 121. May provide stress towards the body. Subsequently, as the pressure is released from the lower side to the upper side by the second pressure providing end 124 at the lower end of the tension bar 121, the elastic spring 122 is connected to the upper end 126 due to the elastic force around the support end 125. And the probe end 120a formed integrally with the upper part again.

As described above, the present specification and drawings have been described with respect to preferred embodiments of the present invention, although specific terms are used, it is only used in a general sense to easily explain the technical contents of the present invention and to help the understanding of the present invention. It is not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that other modifications based on the technical idea of the present invention can be carried out in addition to the embodiments disclosed herein.

100: Film type probe card with vertical probe for RF chip test
110: spring fixing block
120: Vertical MEMS Probe
130: vertical spring structure
140: plate

Claims (5)

Spring fixing block 110;
A probe structure 100a corresponding to a pair of the vertical MEMS probe 120 and a pair is formed at a rear end of the vertical MEMS probe 120 formed in the spring fixing block 110 and formed outside the spring fixing block 110. In this way, a plurality of pairs are formed and driven separately, and the spring-embedded housing 131 includes a spring-loaded housing 131 and a first pressure providing end 132 in an elastic structure so that the spring-loaded housing 131 is inwardly disposed in the cylindrical housing. By including, the compression and decompression by the pressure acting from the lower end of the vertical MEMS probe 120 to the upper end in contact with the wafer through the MEMS film (1-2) of the lower vertical MEMS probe 120 It is provided through the inner spring member, the first pressure providing end 132 is moved to the upper end in accordance with the compressive force provided through the spring member of the spring-integrated housing 131 formed at the upper end A function of transmitting electrical signal by contacting with the other, and when the compressive force provided through the spring member of the spring-integrated housing 131 is released, the function moves to the bottom to release the contact with the wire formed at the upper end to cut off the electrical signal transmission. Vertical spring structure 130 to provide;
Film 1 having a GND layer comprising a GND layer 1-1, a MEMS film 1-2, a bump corresponding to the wafer contact 1-3, and a signal layer 1-4 In contact with the bump (1-3) formed on the MEMS film (1-2) or at least two bumps (1-3) at the same time, the GND layer (1-1) on the MEMS film (1-2) , Forming a connection pattern according to contact with the bumps 1-3 formed on the signal layer 1-4, serves as an interface to the PCB circuit board 3, and has elasticity inside the vertical spring structure 130. Vertical MEMS probe 120 to determine its own height through the structure; And
Formed to be spaced apart from the outer circumferential surface of the spring fixing block 110 with respect to the vertical MEMS probe 120 protruding out of the spring fixing block 110 to determine positions for the vertical MEMS probe 120 and the vertical spring structure 130. Vertical spring structure 130 formed in the spring fixing block 110, as well as formed in the region other than the vertical MEMS probe 120 in the vertical direction in at least one layer in the horizontal direction inside the jig (4). A plate 140 formed in an area other than an area in which the spring-containing housing 131 is formed in at least one layer as an inner circumferential surface of the spring fixing block 110; Including;
The lower end corresponding to the end of the vertical MEMS probe 120 is provided with a coating end 121, and the coating end 121 is a conductive, non-stick coating layer formed on the end of the contact part of the vertical MEMS probe 120. Tension bar 121 is formed in the upper region of the vertical end 120a of the vertical MEMS probe 120, the upper and lower linear movement for the action and release of the pressure to the lower portion, the tension Bar 121 is provided with an external force to the upper for the action and release of the pressure to the lower pressure on the probe end (120a) of the vertical MEMS probe 120, the second pressure providing end 124 to the lower It is formed in a structure connected to, and when the pressure is provided upward from the lower side of each tension bar 121 for the probe end (120a) to the probe movement hole 123 of the vertical MEMS probe 120, each probe end Downward 120a A film type probe card having a vertical probe for testing an RF chip, characterized in that an elastic spring 122 is formed to move and keep it in its original state.
The method according to claim 1,
The upper connecting portion 126 located below the second pressure providing end 124 in the probe movement hole 123 is provided by the downward pressure provided by the second pressure providing end 124 of the lower end of the tension bar 121. By providing a stress toward the support end 125 of the probe hole 123 with respect to the elastic spring 122, it is possible to release the pressure from below to upward by the second pressure providing end 124 of the lower end of the tension bar 121. Accordingly, the elastic spring 122 performs the RF chip test, which serves to return the probe end 120a integrally formed with the upper connection part 126 back to the upper end due to the elastic force around the support end 125. Film type probe card with vertical probe for.
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