KR102039968B1 - Apparatus for treating substrate, unit for spporting substrate and method for manufacturing substrate spporting unit - Google Patents

Abstract

The present invention provides an apparatus for processing a substrate. In one embodiment, an apparatus for processing a substrate includes: a process chamber providing a processing space therein; a support unit supporting the substrate in the processing space; a gas supply unit supplying a process gas into the processing space; And a plasma source for generating a plasma from the process gas, wherein the support unit includes a plurality of first supply flow paths disposed on an upper surface thereof and penetrating from an upper surface to a lower surface so that cooling gas can be supplied toward the substrate. A base plate formed at a lower portion of the dielectric plate and having a plurality of second supply passages extending from the first supply passage and penetrating the bottom surface from an upper surface thereof so as to transfer the cooling gas; And a porous member provided in the first supply flow passage and integrally formed with the dielectric plate.

Description

A method for manufacturing a dielectric plate of a substrate processing apparatus, a substrate support unit, and a substrate support unit {APPARATUS FOR TREATING SUBSTRATE, UNIT FOR SPPORTING SUBSTRATE AND METHOD FOR MANUFACTURING SUBSTRATE SPPORTING UNIT}

The present invention relates to an apparatus for processing a substrate, and more particularly, to an apparatus for processing a substrate using plasma.

Plasma may be used for the processing of the substrate. For example, plasma may be used for etching, deposition or dry cleaning processes. Plasma is generated by very high temperatures, strong electric fields, or RF Electromagnetic Fields, and plasma is an ionized gas state composed of ions, electrons, radicals, and the like. Dry cleaning, ashing, or etching processes using plasma are performed by collision of ions or radicals contained in the plasma with the substrate.

The above-described process is provided with an electrostatic chuck for holding the substrate in place in the chamber. The electrostatic chuck is provided with a supply flow path for supplying a cooling gas such as helium between the upper surface of the electrostatic chuck and the back surface of the substrate for cooling the substrate.

When a cooling gas such as helium is supplied during the process, discharge arching due to high voltage occurs.

An object of the present invention is to provide a substrate processing apparatus that can increase the processing efficiency during substrate processing with plasma.

In addition, an object of the present invention is to reduce the discharge phenomenon that can occur in the supply flow path during the substrate processing using the plasma.

The present invention provides an apparatus for processing a substrate. In one embodiment, an apparatus for processing a substrate includes: a process chamber providing a processing space therein; a support unit supporting the substrate in the processing space; a gas supply unit supplying a process gas into the processing space; And a plasma source for generating a plasma from the process gas, wherein the support unit includes a plurality of first supply flow paths disposed on an upper surface thereof and penetrating from an upper surface to a lower surface so that cooling gas can be supplied toward the substrate. A base plate formed at a lower portion of the dielectric plate and having a plurality of second supply passages extending from the first supply passage and penetrating the bottom surface from an upper surface thereof so as to transfer the cooling gas; And a porous member provided in the first supply flow passage and integrally formed with the dielectric plate.

In addition, a junction part of a different material may not be formed between the dielectric plate and the porous member.

In addition, a bushing of a dielectric material may be installed on an inner wall of the base plate on which the second supply flow path is formed.

In addition, an adhesive layer may be formed on a surface where the dielectric plate and the base plate face each other.

In addition, the bushing may be provided to extend to the adhesive layer.

In addition, the porous member may be a dielectric material.

The porous member may also be provided at the outlet end of the cooling gas.

The present invention also provides a method of manufacturing a dielectric plate provided in a substrate support unit that supports a substrate in a wound space of a substrate processing apparatus, and in which a plurality of cooling gas supply flow paths penetrate a bottom surface from an upper surface thereof. In one embodiment, the porous material disposed in the cooling gas supply flow path and the dielectric plate processing raw material are simultaneously fired to be integrally manufactured.

In addition, the porous member may be provided as a dielectric material.

According to an embodiment of the present invention, substrate processing efficiency can be improved when processing a substrate using plasma.

In addition, according to an embodiment of the present invention, the discharge phenomenon that can occur in the supply flow path during the substrate processing using the plasma is reduced.

1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.
2 is an enlarged cross-sectional view illustrating a supply flow path of a substrate support unit according to an embodiment of the present invention.
3 is a flowchart illustrating a method of manufacturing a dielectric plate provided in an electrostatic plate of a substrate support unit according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape of the elements in the drawings are exaggerated to emphasize a more clear description.

In the embodiment of the present invention, a substrate processing apparatus for etching a substrate using plasma will be described. However, the present invention is not limited thereto, and the present invention can be applied to various kinds of apparatuses that perform a process by supplying plasma into the chamber.

1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the substrate processing apparatus 10 processes a substrate W using plasma. For example, the substrate processing apparatus 10 may perform an etching process on the substrate (W). The substrate processing apparatus 10 includes a chamber 100, a support unit 200, a gas supply unit 300, a plasma source 400, and an exhaust baffle 500.

The chamber 100 provides a space in which a substrate processing process is performed. The chamber 100 includes a housing 110, a dielectric cover 120, and a liner 130.

The housing 110 has an open top and a processing space therein. The processing space is a space where the substrate processing process is performed. The housing 110 is provided of a metallic material. The housing 110 may be provided of aluminum material. The housing 110 may be grounded.

An exhaust hole 102 is formed in the bottom surface of the housing 110. The exhaust hole 102 is connected to the exhaust line 151. Reaction by-products generated during the process and the gas remaining in the inner space of the housing may be discharged to the outside through the exhaust line (151). The inside of the housing 110 is decompressed to a predetermined pressure by the exhaust process.

The dielectric cover 120 covers the open top surface of the housing 110. The dielectric cover 120 is provided in a plate shape and seals the internal space of the housing 110. The dielectric cover 120 may be provided to be detachable. According to one embodiment of the present invention, a flow path 611 is formed in the dielectric cover 120. In addition, the dielectric cover 120 may include a plurality of dielectric plates.

The liner 130 is provided inside the housing 110. The liner 130 has a space in which the upper and lower surfaces are opened. The liner 130 may be provided in a cylindrical shape. The liner 130 may have a radius corresponding to the inner side of the housing 110. The liner 130 is provided along the inner side of the housing 110. A support ring 131 is formed at the top of the liner 130. The support ring 131 is provided as a ring-shaped plate and protrudes out of the liner 130 along the circumference of the liner 130. The support ring 131 sits on top of the housing 110 and supports the liner 130. The liner 130 may be provided of the same material as the housing 110. The liner 130 may be provided of aluminum material. The liner 130 protects the inner surface of the housing 110.

The support unit 200 is located in the processing space of the chamber 100. The support unit 200 supports the substrate (W). The support unit 200 may include an electrostatic chuck 210 that absorbs the substrate W by using electrostatic force. Alternatively, the support unit 200 may support the substrate W in various ways such as mechanical clamping. Hereinafter, the supporting unit 200 including the electrostatic chuck 210 will be described.

The support unit 200 includes an electrostatic chuck 210, an insulating plate 250, and a lower cover 270. The support unit 200 is positioned spaced upward from the bottom of the housing 110 in the chamber 100.

The electrostatic chuck 210 includes a dielectric plate 220, an electrode 223, a heater 225, a base plate 230, and an edge ring 240.

The dielectric plate 220 is located at the upper end of the electrostatic chuck 210. The dielectric plate 220 is provided as a discotic dielectric substance. The substrate W is disposed on an upper surface of the dielectric plate 220.

The first supply channel 221 is formed in the dielectric plate 220. The first supply passage 221 is provided from the top surface of the dielectric plate 210 to the bottom surface. A plurality of first supply flow paths 221 are formed to be spaced apart from each other, and provided as a passage through which a heat transfer medium is supplied to the bottom surface of the substrate W.

The chucking electrode 223 and the heater 225 are embedded in the dielectric plate 220. The chucking electrode 223 is positioned above the heater 225. The chucking electrode 223 is electrically connected to the first lower power source 223a. The first lower power source 223a includes a DC power source.

A switch 223b is installed between the chucking electrode 223 and the first lower power source 223a. The chucking electrode 223 may be electrically connected to the first lower power source 223a by ON / OFF of the switch 223b. When the switch 223b is turned on, a direct current is applied to the chucking electrode 223. An electrostatic force acts between the chucking electrode 223 and the substrate W by the current applied to the chucking electrode 223, and the substrate W is absorbed by the dielectric plate 220 by the electrostatic force.

The heater 225 is electrically connected to the second lower power source 225a. The heater 225 generates heat by resisting a current applied from the second lower power source 225a. The generated heat is transferred to the substrate W through the dielectric plate 220. The substrate W is maintained at a predetermined temperature by the heat generated by the heater 225. The heater 225 includes a spiral coil.

The base plate 230 is positioned below the dielectric plate 220. The bottom surface of the dielectric plate 220 and the top surface of the base plate 230 may be bonded by the adhesive layer 236. The base plate 230 may be provided of aluminum material. The upper surface of the base plate 230 may be stepped so that the center region is positioned higher than the edge region. The upper center region of the base plate 230 has an area corresponding to the bottom of the dielectric plate 220 and is bonded to the bottom of the dielectric plate 220. In the base plate 230, a first circulation channel 231, a second circulation channel 232, and a second supply channel 233 are formed.

The first circulation passage 231 is provided as a passage through which the heat transfer medium circulates. The first circulation channel 231 may be formed in a spiral shape in the base plate 230. Alternatively, the first circulation channel 231 may be arranged such that ring-shaped channels having different radii have the same center. Each of the first circulation passages 231 may communicate with each other. The first circulation passages 231 are formed at the same height.

The second circulation passage 232 is provided as a passage through which the cooling fluid circulates. The second circulation channel 232 may be formed in a spiral shape in the base plate 230. In addition, the second circulation channel 232 may be disposed such that ring-shaped channels having different radii have the same center. Each of the second circulation passages 232 may communicate with each other. The second circulation passage 232 may have a larger cross-sectional area than the first circulation passage 231. The second circulation passages 232 are formed at the same height. The second circulation passage 232 may be located below the first circulation passage 231.

The second supply flow path 233 extends upward from the first circulation flow path 231 and is provided as an upper surface of the base plate 230. The second supply flow path 243 is provided in a number corresponding to the first supply flow path 221 and connects the first circulation flow path 231 and the first supply flow path 221.

 The first circulation passage 231 is connected to the heat transfer medium storage unit 231a through the heat transfer medium supply line 231b. The heat transfer medium storage unit 231a stores the heat transfer medium. The heat transfer medium includes an inert gas. According to an embodiment, the heat transfer medium comprises helium (He) gas. The helium gas is supplied to the first circulation channel 231 through the supply line 231b, and is sequentially supplied to the bottom surface of the substrate W through the second supply channel 233 and the first supply channel 221. The helium gas serves as a medium through which heat transferred from the plasma to the substrate W is transferred to the electrostatic chuck 210.

The second circulation passage 232 is connected to the cooling fluid storage unit 232a through the cooling fluid supply line 232c. Cooling fluid is stored in the cooling fluid storage unit 232a. A cooler 232b may be provided in the cooling fluid reservoir 232a. Cooler 232b cools the cooling fluid to a predetermined temperature. Alternatively, cooler 232b may be installed on cooling fluid supply line 232c. The cooling fluid supplied to the second circulation passage 232 through the cooling fluid supply line 232c circulates along the second circulation passage 232 and cools the fingerboard 230. The base plate 230 cools the dielectric plate 220 and the substrate W while being cooled to maintain the substrate W at a predetermined temperature.

The focus ring 240 is disposed in an edge region of the electrostatic chuck 210. The focus ring 240 has a ring shape and is disposed along the circumference of the dielectric plate 220. The upper surface of the focus ring 240 may be stepped so that the outer portion 240a is higher than the inner portion 240b. The upper inner side portion 240b of the focus ring 240 is positioned at the same height as the upper surface of the dielectric plate 220. The inner surface of the focus ring 240 is provided to surround the edge region of the substrate W positioned on the top surface of the dielectric plate 220. The focus ring 240 allows the plasma to be concentrated in the chamber 100 to the area facing the substrate W.

An insulation plate 250 is positioned below the base plate 230. The insulating plate 250 is provided with a cross section corresponding to the base plate 230. The insulating plate 250 is positioned between the base plate 230 and the lower cover 270. The insulating plate 250 is provided with an insulating material, and electrically insulates the base plate 230 and the lower cover 270.

The lower cover 270 is located at the lower end of the support unit 200. The lower cover 270 is spaced apart from the bottom of the housing 110 to the top. The lower cover 270 has a space where an upper surface is opened. The upper surface of the lower cover 270 is covered by the insulating plate 250. Therefore, the outer radius of the cross section of the lower cover 270 may be provided with the same length as the outer radius of the insulating plate 250. In the inner space of the lower cover 270, a lift pin module (not shown) for moving the substrate W to be transferred from the external transport member to the electrostatic chuck 210 may be located.

The lower cover 270 has a connecting member 273. The connection member 273 connects the outer surface of the lower cover 270 with the inner wall of the housing 110. A plurality of connection members 273 may be provided on the outer surface of the lower cover 270 at regular intervals. The connection member 273 supports the support unit 200 inside the chamber 100. In addition, the connection member 273 is connected to the inner wall of the housing 110 to allow the lower cover 270 to be electrically grounded. A first power line 223c connected to the first lower power source 223a, a second power line 225c connected to the second lower power source 225a, and a heat transfer medium supply line connected to the heat transfer medium storage unit 231a ( 231b and the cooling fluid supply line 232c connected to the cooling fluid storage unit 232a extend into the lower cover 270 through the inner space of the connection member 273.

The gas supply unit 300 supplies a process gas to the processing space inside the chamber 100. The gas supply unit 300 includes a gas supply nozzle 310, a gas supply line 320, and a gas storage unit 330. The gas supply nozzle 310 is installed at the center of the airtight cover 120. An injection hole is formed at the bottom of the gas supply nozzle 310. The injection hole is located below the airtight cover 120 and supplies process gas to the processing space of the chamber 100. The gas supply line 320 connects the gas supply nozzle 310 and the gas storage unit 330. The gas supply line 320 supplies the process gas stored in the gas storage unit 330 to the gas supply nozzle 310. The valve 321 is installed in the gas supply line 320. The valve 321 opens and closes the gas supply line 320 and adjusts the flow rate of the process gas supplied through the gas supply line 320.

The plasma source 400 excites the process gas supplied into the processing space of the chamber 100 in a plasma state. As the plasma source 400, an inductively coupled plasma (ICP) source may be used. The plasma source 400 includes an antenna chamber 410, an antenna 420, and a plasma power source 430. The antenna chamber 410 is provided in a cylindrical shape with an open bottom. The antenna chamber 410 is provided with a space therein. The antenna chamber 410 is provided to have a diameter corresponding to the chamber 100. The lower end of the antenna chamber 410 is provided to be detachable to the hermetic cover 120. Anna 420 is disposed inside the antenna chamber 410. The antenna 420 is provided as a spiral coil wound around a plurality of times, and is connected to the plasma power source 430. The antenna 420 receives power from the plasma power source 430. The plasma power source 430 may be located outside the chamber 100. The antenna 420 to which power is applied may form an electromagnetic field in the processing space of the chamber 100. The process gas is excited in the plasma state by the electromagnetic field.

The exhaust baffle 500 is positioned between the inner wall of the housing 110 and the support member 400. The exhaust baffle 500 has a through hole 511 formed therein. The exhaust baffle 500 is provided in an annular ring shape. Process gas provided in the housing 110 passes through the through holes 511 of the baffle 510 and is exhausted to the exhaust hole 102. The flow of the process gas may be controlled according to the shape of the baffle 510 and the shape of the through holes 511.

2 is an enlarged cross-sectional view of a supply flow path of a support unit according to an embodiment of the present invention.

2, a porous member 222 is provided in the first supply passage 221 of the dielectric plate 220. The porous member 222 is provided with a dielectric material to maintain the dielectric property of the dielectric plate 220. The porous member 222 may be a heat resistant porous engineering plastic (porous plastic) or porous ceramic material (porous ceramic).

The porous member 222 is provided at the outlet end of the cooling gas. According to one embodiment, the porous member 222 is provided from the inlet end to the outlet end of the first supply passage 221.

The porous member 222 forms a fine flow path through which the cooling gas may pass. The path of the cooling gas inside the porous member 222 becomes an unspecific path rather than an upward straight path. Since the cooling gas is discharged through the pore portion of the porous member 222, the path of the cooling gas is relatively long compared to the path where the porous member 222 is not provided.

While the cooling gas is introduced through the micropores of the porous member 222, the cooling gas flow flowing through the path of the micropores blocks the plasma from flowing into the filter and the cooling gas flow path.

The porous member 222 is provided integrally molded with the dielectric plate. The junction of the heterogeneous material is not formed between the dielectric plate 230 and the porous member 222. If the porous member 222 and the dielectric plate 220 are assembled and bonded, a minute gap is inevitably formed. The gap provides a straight stream through which the plasma can enter. In order to eliminate the gap, when adhesive is used, particles may be generated due to plasma treatment. Particles generated by the adhesive can cause contamination of the substrate.

However, when the porous member 222 is integrally formed with the dielectric plate 220 and provided, no minute gap is formed. In addition, as the diameter of the first supply passage 221 can be reduced beyond the limit according to machining, the discharge phenomenon can be reduced. In addition, since there is no adhesive agent, there is little possibility of particle generation.

The lower portion of the dielectric plate 220 is a base plate 230 bonded by the adhesive layer 236 is located. The second supply flow path 233 of the base plate 230 communicates with the first supply flow path 221. A bushing 234 is installed on an inner wall of the base plate 230 on which the first supply flow path 221 is formed. Bushing 234 extends to adhesive layer 236. The adhesive layer 236 and the base plate 230 are not exposed to the plasma by the bushing 234.

3 is a flowchart illustrating a method of manufacturing a dielectric plate provided on an electrostatic plate of a substrate support unit according to an embodiment of the present invention.

The porous member 222 prepares a porous member 222 having heat resistance, pressure resistance, and dielectric properties such as heat resistant porous engineering plastic material or porous ceramic material (S100).

And the raw material for processing the dielectric plate 220 is prepared. The processing raw material may be ceramic powder, plastic pellets, or the like (S200).

The prepared porous member 222 and the processing material are fired together to manufacture the dielectric plate 230 integrated with the porous member 222 (S300).

The embodiment according to the present invention has been described above. However, the present invention is not limited to the above-described embodiments, and those skilled in the art to which the present invention pertains can vary as many as possible without departing from the spirit of the technical idea of the present invention described in the claims below. Changes may be made.

100: chamber, 200: support unit;
300: gas supply unit, 400: plasma source;
500: exhaust baffle.

Claims (12)

In the apparatus for processing a substrate,
A process chamber providing a processing space therein;
A support unit for supporting a substrate in the processing space;
A gas supply unit supplying a process gas into the processing space;
A plasma source for generating a plasma from the process gas,
The support unit,
A dielectric plate having a substrate disposed on an upper surface thereof and having a plurality of first supply flow passages penetrating from the upper surface to the lower surface such that cooling gas can be supplied toward the substrate;
A base plate positioned below the dielectric plate and having a plurality of second supply flow passages extending from the first supply flow passage and passing through the bottom surface at an upper surface thereof so that the cooling gas can be transferred;
A porous member provided in the first supply flow path of the dielectric plate and integrally formed with the dielectric plate,
The dielectric plate is integrally manufactured by simultaneously firing the porous member disposed in the first supply flow path and the dielectric plate processing raw material, and a joint of a different material is not formed between the dielectric plate and the porous member. Substrate processing apparatus. delete According to claim 1,
And a bushing of a dielectric material is installed on an inner wall of the base plate on which the second supply flow path is formed. According to claim 1,
And a bonding layer formed on a surface of the dielectric plate and the base plate facing each other. According to claim 1,
A bushing of dielectric material is installed on an inner wall of the base plate on which the second supply flow path is formed.
An adhesive layer is formed on a surface of the dielectric plate and the base plate facing each other,
And the bushing extends to the adhesive layer. According to claim 1,
The porous member is provided with a dielectric material. According to claim 1,
The porous member is provided at the outlet end of the cooling gas. In the manufacturing method of the dielectric plate provided in the board | substrate support unit which supports a board | substrate in the wound space of a board | substrate processing apparatus, and the some cooling gas supply flow path which penetrates the bottom surface from the upper surface is provided,
The porous material disposed in the cooling gas supply passage and the dielectric plate processing material are simultaneously manufactured by integrally firing,
Dielectric plate manufacturing method for manufacturing so that the junction between the heterogeneous material is not formed between the dielectric plate and the porous member. The method of claim 8,
The porous member is a dielectric plate manufacturing method provided by a dielectric material. A support unit for supporting a substrate in a processing space of an apparatus for processing a substrate,
The support unit,
A dielectric plate having a substrate disposed on an upper surface thereof and having a plurality of first supply flow passages penetrating from the upper surface to the lower surface such that cooling gas can be supplied toward the substrate;
A base plate positioned below the dielectric plate and having a plurality of second supply flow passages extending from the first supply flow passage and penetrating the bottom surface from an upper surface thereof so that the cooling gas can be transferred;
A porous member provided in the first supply passage of the dielectric plate and integrally formed with the dielectric plate,
The dielectric plate is integrally manufactured by simultaneously firing the porous member disposed in the first supply flow path and the dielectric plate processing raw material, and a joint of a different material is not formed between the dielectric plate and the porous member. Substrate support unit. delete The method of claim 10,
The porous member is provided with a dielectric material, and a bushing of a dielectric material is installed on an inner wall of the base plate on which the second supply flow path is formed.

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