KR102009446B1 - Thermoelectric module and method for manufacturing the same - Google Patents

Abstract

Provided are a thermoelectric module having a higher power density by integrating more thermoelectric elements per unit area, and a method of manufacturing the same. Method for manufacturing a thermoelectric module according to the present invention comprises the steps of alternately laminating by bonding between the p-type wafer and the n-type wafer with an insulating adhesive to prepare a stack; Slicing the stack in two directions perpendicular to and perpendicular to the base surface of the stack to obtain a rod comprising a plurality of pairs of p-type thermoelectric elements and n-type thermoelectric elements; And forming a lattice-shaped block in which the p-type thermoelectric element and the n-type thermoelectric element are alternated by integrating the rod.

Description

Thermoelectric module and method for manufacturing the same {Thermoelectric module and method for manufacturing the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermoelectric device used for thermoelectric power generation and a method for manufacturing the same, and more particularly, to a thermoelectric module including a plurality of small and large pairs of thermoelectric elements and a manufacturing method thereof.

Due to the temperature difference between the two ends of the solid state material, electrons (or holes) having thermal dependences generate concentration differences at both ends, which are represented by an electrical phenomenon called thermoelectric power, that is, a thermoelectric phenomenon. These thermoelectric phenomena can be classified into thermoelectric power generation, which produces electrical energy, and thermoelectric cooling / heating, which causes a temperature difference between both ends by supplying electricity.

Thermoelectric materials exhibiting thermoelectric phenomena have an environmentally friendly and sustainable advantage in the process of power generation and cooling, and many studies have been conducted. In particular, the production of electric power from industrial waste heat and automobile waste heat is of interest for improving fuel efficiency and CO ₂ reduction.

In general, a thermoelectric device may be a basic unit of a pair of pn thermoelectric elements consisting of a p-type thermoelectric element in which holes move and move thermal energy, and an n-type thermoelectric element in which electrons move and transfer thermal energy. Including a plurality of pairs of thermoelectric elements, it may be of a module type consisting of electrodes of the upper and lower pn thermoelectric elements, and an insulating substrate electrode.

1 is a partial cutaway perspective view schematically illustrating a conventional general thermoelectric module.

Referring to FIG. 1, a conventional thermoelectric module 60 ′ includes a p-type thermoelectric element 64 and an n-type thermoelectric element 65. The electrodes 63 are attached to the pair of insulating substrates 61 and 62 in predetermined patterns, respectively, so that the p-type and n-type thermoelectric elements 64 and 65 are electrically connected by the electrodes 63.

If there is a temperature difference between the insulating substrates 61 and 62, an electromotive force is generated between the p-type thermoelectric element 64 and the n-type thermoelectric element 65, and this is pulled out through the lead wire connected to the terminal. As described above, the conventional thermoelectric module has a structure in which a pair consisting of a p-type thermoelectric element 64 and an n-type thermoelectric element 65 is repeatedly arranged in accordance with a use condition. Each pair is connected to the electrode 63, and the electrode 63 is connected to the insulating substrates 61 and 62. That is, a general thermoelectric module regularly arranges p-type and n-type thermoelectric elements (sometimes called legs because they are generally columnar) so that a plurality of thermoelectric elements are formed in a plane, and electrically connects these thermoelectric elements in series. Thermally, they are connected in parallel.

Conventional methods of manufacturing such thermoelectric modules are known to make p-type and n-type thermoelectric elements separately and then integrate them on an insulating substrate. The gap between the integrated pn thermoelectric elements is large, increasing the number of thermoelectric elements per unit area. There is a limit to this. In addition, in manufacturing, the individual p-n thermoelectric elements must be subjected to various processes such as bonding to electrodes formed on an insulating substrate, and thus, there is a problem in that manufacturing cost increases and product reliability falls.

SUMMARY OF THE INVENTION An object of the present invention is to provide a thermoelectric module having a higher power density by integrating more thermoelectric elements per unit area and a method of manufacturing the same.

In order to solve the above problems, the method of manufacturing a thermoelectric module according to the present invention comprises the steps of alternately laminating by bonding between the p-type wafer and the n-type wafer with an insulating adhesive to produce a stack; Slicing the stack in two directions perpendicular to and perpendicular to the base surface of the stack to obtain a rod comprising a plurality of pairs of p-type thermoelectric elements and n-type thermoelectric elements; And forming a lattice-shaped block in which the p-type thermoelectric element and the n-type thermoelectric element are alternated by integrating the rod.

Another thermoelectric module manufacturing method according to the present invention comprises the steps of alternately stacking by bonding between the p-type wafer and the n-type wafer with an insulating adhesive to produce a stack; First slicing the stack along a direction perpendicular to the base surface of the stack to obtain a block in which p-type thermoelectric bars and n-type thermoelectric bars are alternately stacked; Bonding the first slicing surface to each other while the p-type thermoelectric rod and the n-type thermoelectric rod are alternately bonded to each other by the insulating adhesive between the blocks; And second slicing the stacked blocks in a direction crossing the first slicing surface to form a lattice-shaped block in which a p-type thermoelectric element and an n-type thermoelectric element are alternately formed.

In the thermoelectric module manufacturing method according to the present invention, the p-type wafer and n-type wafer is preferably sliced ingot prepared by sintering by SPS (Spark Plasma Sintering) or hot press (Hot Press).

Each of the p-type wafer and the n-type wafer may have a thickness of 0.01 mm to 10 mm. Preferably it is 0.1mm to 2mm.

Integrating the rods may be combining the rods with the insulating adhesive.

The heat insulating adhesive may be one in which an inorganic powder is filled in the curable material. The inorganic powder may include at least one of metal oxides, metal nitrides, metal carbides, and metal hydroxides. The curable material may include at least one of silicone resin, acrylic, polyurethane, epoxy, polyimide, and polyamide.

In one specific embodiment, the step of obtaining the rod comprises: primary slicing the stack along a direction perpendicular to the base surface of the stack to obtain a block in which p-type thermoelectric rods and n-type thermoelectric rods are alternately stacked; And secondary slicing the block in a direction crossing the primary slicing surface.

The thermoelectric module according to the present invention may be manufactured so that the fill factor (total area of the thermoelectric element / module area) is 0.8 or more.

In the thermoelectric module according to the present invention, a p-type thermoelectric element and an n-type thermoelectric element are alternated from a wafer manufactured by sintering with SPS or hot press, and the p-type thermoelectric element and the n-type thermoelectric element are bonded with an insulating adhesive.

According to the present invention, by stacking a wafer sintered with SPS or hot press with a heat insulating adhesive to manufacture a thermoelectric module, more thermoelectric elements per unit area may be integrated to increase the output density of the thermoelectric module.

In the present invention, the p-type and n-type thermoelectric elements are not individually made and then integrated into an insulating substrate, but the p-type thermoelectric material and the n-type thermoelectric material are collectively arranged like a block cut into a stack or a bar cut from a block. By integrating with an aggregate, it is possible to manufacture thermoelectric modules more easily and with fewer process times. This simpler manufacturing process can reduce manufacturing costs and increase product reliability.

The following drawings, which are attached to this specification, illustrate preferred embodiments of the present invention, and together with the contents of the present invention serve to further understand the technical spirit of the present invention, the present invention is limited to the matters described in such drawings. It should not be construed as limited.
1 is a partial cutaway perspective view schematically illustrating a conventional general thermoelectric module.
2 is a flow chart of a method of manufacturing a thermoelectric module according to an embodiment of the present invention.
3 is a view for explaining a thermoelectric module manufacturing method according to an embodiment of the present invention by process order.
4 is a flow chart of a method of manufacturing a thermoelectric module according to another embodiment of the present invention.
5 is a view for explaining a thermoelectric module manufacturing method according to another embodiment of the present invention by process order.
6 is a photograph of a lattice-shaped block manufactured according to the experimental example of the present invention.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the present embodiments are intended to complete the disclosure of the present invention and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you. Shapes of elements in the drawings and the like have been exaggerated for clarity and the same reference numbers refer to the same components.

2 is a flow chart of a method of manufacturing a thermoelectric module according to an embodiment of the present invention.

Referring to FIG. 2, the thermoelectric module manufacturing method of the present invention includes a stack manufacturing step s1, a slicing step s2, and an integration step s3.

In the stack fabrication step (s1), a stack is manufactured by alternately stacking a p-type wafer and an n-type wafer with an insulating adhesive. 'Alternative' lamination means alternating lamination, as is well known. For example, p-type, n-type, p-type, n-type,…. Laminate alternately so that they can be stacked in order.

In the slicing step (s2), the stack is sliced along two directions perpendicular to and perpendicular to the base surface of the stack to obtain a bar including a plurality of pairs of p- and n-type thermoelectric elements. The term 'base surface of the stack' corresponds to the broad sides of the p-type wafer and the n-type wafer.

In the integration step s3, the bars are integrated to form a lattice block in which the p-type thermoelectric element and the n-type thermoelectric element are alternated. The stacks are p-type, n-type, p-type, n-type,... Along the stacking direction. Alternating in order, the lattice blocks are p-type, n-type, p-type, n-type,... In addition to alternating order, p-type, n-type, p-type, n-type,... In order.

This manufacturing method will be described in more detail with reference to FIG. 3.

3 is a view for explaining a thermoelectric module manufacturing method according to an embodiment of the present invention by process order.

Referring to FIG. 3A, first, the stack manufacturing step S1 of FIG. 2 is performed to manufacture the stack 30. The stack 30 is manufactured by alternately stacking the p-type wafer 10 and the n-type wafer 20, and is manufactured by bonding the thermal insulation adhesive 15 between the p-type wafer 10 and the n-type wafer 20. . When the heat insulating adhesive 15 operates at room temperature, the stack 30 manufacturing step is performed at room temperature, and in the case of the heat insulating adhesive 15 using a thermosetting material or the like, curing step at a high temperature is required after lamination.

The p-type wafer 10 and the n-type wafer 20 may be manufactured by sintering with SPS or hot press. The SPS or hot press is a pressure sintering method, and when sintered by this pressure sintering method, the thermoelectric material may easily obtain a high sintered density and a thermoelectric performance improvement effect. The SPS method is a step of applying pulsed electrical energy directly to a particle gap of a powder compact to effectively apply high energy of a discharge plasma generated by a spark discharge by thermal diffusion, an action of an electric field, or the like. Since rapid temperature rising is possible, the growth of particles can be controlled, a compact sintered body can be obtained in a short time, and an sintered material can be easily sintered. The hot press uses a high pressure and a high temperature of 100 to 200 Mpa, and is a method of filling a capsule with a predetermined amount of powder or a molded product, degassing sealing, pressurizing and simultaneously heating and sintering.

In terms of mass production, the p-type wafer 10 and the n-type wafer 20 are preferably wafers sliced in an ingot manufactured by sintering with SPS or hot press. The thermoelectric material at this time may be any thermoelectric material sinterable. The thermoelectric material is preferably a semiconductor, metal, metal alloy, semimetal, or a combination thereof. Skaterudite, clathrate, Half-Heusler intermetallic alloy, Zintl phase, antimony zinc, chalcogenide, silicon germanium and Pb- Semiconductors of Te based materials are preferred. In the case of using a wafer manufactured by the crystal growth method, there is a limit to the material capable of crystal growth and the mechanical strength is sometimes poor. In the present invention, since pellets or wafers prepared by sintering are used, there are few restrictions on the materials that can be used and excellent mechanical strength.

The thickness of each of the p-type wafer 10 and the n-type wafer 20 may be determined in consideration of the ease of manufacture and handling and the size of the desired thermoelectric module, which may be 0.01 mm to 10 mm. Preferably it is 0.1mm to 2mm.

The heat insulating adhesive 15 is also called ceramic glue or polymer glue, and is filled with a heat insulating inorganic powder in a curable material. It is widely used in thermal bonding interface due to its good price advantage and thermal conductivity performance, and in particular, it is easy to fix and used in various forms.

In order to reduce the thermal conductivity of the heat insulating adhesive, the curable resin may be filled with a material having a low thermal conductivity and thinned. What is necessary is just to adjust the viscosity of an adhesive agent and the size of a filler for thinning. The smaller the viscosity of the adhesive, the smaller the size of the filler can be thinned. Examples of low thermal conductivity materials include metal oxides such as aluminum oxide, magnesium oxide, zinc oxide, silicon carbide, quartz, and aluminum hydroxide, metal carbides, and metal hydroxides. The curable material may include at least one of silicone resin, acrylic, polyurethane, epoxy, poly imide, and poly amide.

The composition of the heat insulation adhesive 15 used by this invention is not limited to what was illustrated above. The heat insulating adhesive 15 can use any product on the market if the heat transfer is reduced while making the thermoelectric module light and small. Especially, if it is an adhesive excellent in adhesiveness, impact resistance, heat insulation, etc., it is better.

Although not specifically intended to be limited to any product, a possible thermal adhesive 15 may have a bonding thickness (BLT) as small as 130 μm. It also reliably adheres to various types of substrates. This small BLT increases the fill factor of the thermoelectric module according to the present invention.

Next, referring to FIG. 3 (b), the p-type thermoelectric rod 10a and the n-type thermoelectric are first sliced by slicing the stack 30 along a direction c perpendicular to the base surface of the stack 30. The block 30a in which the rods 20a are alternately stacked is obtained. Reference numeral 40 denotes the primary slicing direction. The slicing can be performed with a normal fine cutter or the like. For example, a wire saw 50 or the like used to slice the wafer from the ingot may be used.

Primary slicing may be performed by repeatedly performing one wire saw 50 several times to sequentially obtain several blocks 30a. Of course, the wire saws 50 may be arranged at equal intervals, and then several blocks 30a may be simultaneously manufactured by one slicing process.

Then, as shown in FIG. 3C, the block 30a is second-sliced in the direction crossing the primary slicing surface, so that the p-type thermoelectric element 10b and the n-type thermoelectric element 20b are separated. The rod 30b including several pairs is obtained. Reference numeral 60 denotes the secondary slicing direction. In general, it is optimal to orthogonal to the primary slicing direction 40 and the secondary slicing direction 60.

In the second slicing, a plurality of rods 30b may be sequentially obtained by repeatedly performing a single wire saw 50. After placing the wire saws 50 at equal intervals, a plurality of rods 30b may be manufactured at the same time by a single slicing process.

3 (b) and (c) described above correspond to the slicing step s2 of FIG. 2.

Next, as shown in FIG. 3D, the bar 30b is integrated to form a lattice block 30c in which the p-type thermoelectric element 10b and the n-type thermoelectric element 20b are alternated. This corresponds to the integration step s3 of FIG.

When the bars 30b are integrated, the two adjacent bars 30b are separated from each other so that the p-type thermoelectric element 10b and the n-type thermoelectric element 20b are alternated along the columns or rows of the lattice-shaped block 30c. Lay out the stacking order. The rod 30b is also bonded by the heat insulating adhesive 15.

At this time, the lattice block 30c may be clamped or inserted between two electrically separated substrates 70 and 80 as shown to form a complete thermoelectric module 100. The substrates 70 and 80 are insulating substrates such as ceramic substrates. The electrode (not shown) is directly formed on the upper and lower portions of the lattice-shaped block 30c and then adhered to the substrates 70 and 80, or after the electrodes are formed on the substrates 70 and 80, the lattice-shaped block 30c is attached thereto. Is bonded between the substrates 70 and 80 and the lattice block 30c. The electrode has a structure in which the p-type thermoelectric element 10b and the n-type thermoelectric element 20b are repeatedly arranged in series according to the use conditions. Depending on the application, it may also be manufactured as a bare type thermoelectric module in which none or none of the substrates 70 and 80 are present.

As the substrates 70 and 80, sapphire, silicon, pyrex, quartz substrates and the like can be used. The material of the electrode may be variously selected, such as aluminum, nickel, gold, titanium, etc., and the size thereof may also be variously selected. As the method for patterning the electrode, a conventionally known patterning method can be used without limitation, and for example, a lift-off semiconductor process, a deposition method, a photolithography method, or the like can be used.

Thus, in the method of manufacturing the thermoelectric module 100 according to the present invention, as described with reference to FIG. 3, the p-type wafer 10 and the n-type wafer 20 from the ingot sintered by SPS or hot press are coated with an insulating adhesive ( 15) after stacking (manufacturing the stack 30), slicing in one direction (manufacturing the block 30a), and slicing the sliced in the longitudinal direction to produce a row of pn thermoelectric elements (manufacturing the rod 30b). ]. Thereafter, the rows of p-n thermoelectric elements are arranged on a substrate to form a module, and at this time, the thermal insulation adhesive 15 is bonded between the rows of p-n thermoelectric elements (manufacture of grid-shaped block 30c).

In the present invention, rather than making the p-type and n-type thermoelectric elements separately and integrating them into an insulating substrate, the bar 30b cut the stack 30, the block 30a cut the stack 30, the block 30a It is possible to manufacture the thermoelectric module 100 more easily with fewer processes by integrating the p-type thermoelectric material and the n-type thermoelectric material collectively, and by integrating the rods 30b.

As shown in (d) of FIG. 3, the thermoelectric module 100 according to the present invention is a p-type thermoelectric element 10b and an n-type thermoelectric element 20b from pellets or wafers prepared by sintering with SPS or hot press. Are alternately coupled between the p-type thermoelectric element (10b) and the n-type thermoelectric element (20b) by a heat insulating adhesive (15).

In the thermoelectric module integrated by the conventional method, there is a limit in increasing the number of thermoelectric elements per unit area due to the large gap between p-n thermoelectric elements. However, according to the present invention, there is an advantage that the p-type thermoelectric element 10b and the n-type thermoelectric element 20b are coupled with the heat insulating adhesive 15 and compactly integrated without empty space. Accordingly, the fill factor (thermoelectric element total area / module area) can be manufactured to be 0.8 or more, it is possible to manufacture a thermoelectric module having a high power density.

The closer to 1 the fill factor is, the more it is ideal, but there are limitations depending on the manufacturing method and thermoelectric arrangement. The present invention has a batch and a manufacturing method that is 0.8 or more when the thickness of the heat insulating adhesive 15 is calculated on the assumption that the thickness is the minimum thickness to maintain the bond.

The heat insulating adhesive 15 is preferably one that is not electrically conductive. The heat insulating adhesive 15 acts as an insulating diaphragm between the p-type thermoelectric element 10b and the n-type thermoelectric element 20b and effectively prevents moisture penetration from the outside. Thus, the thermal insulation adhesive 15 provides for easier module production and further protects the p-type thermoelectric element 10b and the n-type thermoelectric element 20b from degradation and contamination by external factors such as humidity, oxygen or chemicals. Protect.

The thermoelectric module 100 according to the present invention may be, for example, a thermoelectric cooling system or a thermoelectric power generation system. The thermoelectric cooling system may be a general-purpose cooling device such as a refrigerantless refrigerator or an air conditioner, a micro cooling system, an air conditioner, or waste heat generation. Systems, and the like, but are not limited thereto. The construction and manufacturing method of the thermoelectric cooling system are well known in the art, and thus detailed description thereof is omitted.

4 is a flow chart of a method of manufacturing a thermoelectric module according to another embodiment of the present invention.

Referring to FIG. 4, another method of manufacturing a thermoelectric module according to the present invention includes a stack manufacturing step s11, a first slicing step s12, an assembling step s13, a second slicing step s14, and an integration step s15. Include.

The stack fabrication step s11 is the same as the stack fabrication step s1 described with reference to FIG. 2.

In the first slicing step s12, the stack is first sliced along a direction perpendicular to the base surface of the stack to obtain a block in which p-type thermoelectric bars and n-type thermoelectric bars are alternately stacked.

In the assembling step (s13), the first slicing surfaces are opposed to each other, and the p-type thermoelectric rods and the n-type thermoelectric rods are alternately bonded to each other with the heat insulating adhesive to be laminated.

In the second slicing step (s14), the stacked blocks manufactured in the assembling step (s13) are second sliced in a direction crossing the first slicing surface to form a lattice block in which the p-type thermoelectric element and the n-type thermoelectric element are alternately formed. do.

In the integration step s15, the lattice-shaped block, the electrode, and the substrate are integrated to manufacture a thermoelectric module.

This manufacturing method will be described in more detail with reference to FIG. 5.

5 is a view for explaining a thermoelectric module manufacturing method according to another embodiment of the present invention by process order.

Referring to FIG. 5A, first, a stack 30 is manufactured. The stack 30 is manufactured by alternately stacking the p-type wafer 10 and the n-type wafer 20, and is manufactured by bonding the thermal insulation adhesive 15 between the p-type wafer 10 and the n-type wafer 20. . The stack 30 manufacturing method is the same as that described with reference to FIG.

Next, FIG. 5B shows a block 30a manufactured by the first slicing. The block 30a is formed by alternately stacking the p-type thermoelectric rod 10a and the n-type thermoelectric rod 20a. The method of manufacturing the block 30a is the same as the primary slicing description made with reference to FIG. 3 (b). The first slicing direction is shown at 40 'in FIG. 5A.

Next, FIG. 5C shows the assembling step s13 of FIG. 4. The first slicing surfaces face each other and are laminated by bonding the insulating adhesive 15 between the blocks 30a such that the p-type thermoelectric rod 10a and the n-type thermoelectric rod 20a alternate.

Next, the stacked blocks 30a are second sliced in a direction intersecting the first slicing surface (indicated by reference numeral 60 'in FIG. 5C). In general, it is optimal to orthogonal to the first slicing surface.

Then, as shown in FIG. 5D, a lattice-shaped block 30d in which the p-type thermoelectric element 10b and the n-type thermoelectric element 20b are alternately formed is formed.

Subsequent integration into the thermoelectric module (step s15 of FIG. 4) is the same as that described with reference to FIG. 3d. Electrodes may be formed on the upper and lower portions of the lattice block 30d to form a bare type thermoelectric module, or a substrate may be further integrated on the upper and lower portions to form a thermoelectric module.

6 is a photograph of a lattice-shaped block manufactured according to the experimental example of the present invention.

The lattice-shaped block was manufactured according to the description with reference to FIG. 5, and the module dimension was designed to be 7 x 4.5 mm ² . The pn thermoelectric element pair was eight (the number of thermoelectric elements was 16). In this way, a very compact lattice-shaped block can be manufactured and used as a thermoelectric module. The fill factor may have a very high power density of 0.8 or more.

As mentioned above, although the preferred embodiment of the present invention has been illustrated and described, the present invention is not limited to the specific preferred embodiment described above, and the present invention belongs to the present invention without departing from the gist of the present invention as claimed in the claims. Various modifications can be made by those skilled in the art, and such changes are within the scope of the claims.

10: p-type wafer 10a: p-type thermoelectric rod
10b: p-type thermoelectric element 15: heat insulating adhesive
20: n-type wafer 20a: n-type thermoelectric rod
20b: n-type thermoelectric element 30: stack
30a: Block 30b: Bar
30c, 30d: Grid block 40: Primary slicing direction
40 ': first slicing direction 50: wire saw
60: second slicing direction 60 ': second slicing direction
70, 80: substrate 100: thermoelectric module

Claims (15)

thermal insulation between the p-type wafer and the n-type wafer bonding) alternately laminating to produce a stack;
Slicing the stack in two directions perpendicular to and perpendicular to the base surface of the stack to obtain a rod comprising a plurality of pairs of p-type thermoelectric elements and n-type thermoelectric elements; And
A method of manufacturing a thermoelectric module, comprising: forming a lattice-shaped block in which the p-type thermoelectric element and the n-type thermoelectric element are alternately formed by integrating the rods without empty space by coupling the rods with the insulating adhesive.
The heat insulating adhesive is a heat insulating inorganic powder filler is included in the curable material,
By adjusting the viscosity of the heat insulating adhesive and the size of the filler to at least the thickness of the heat insulating adhesive thinning to maintain the bond, the fill factor (thermoelectric element total area / module area) is 0.8 or more The thermoelectric module manufacturing method characterized by obtaining a thermoelectric module. delete The method of claim 1, wherein the p-type wafer and the n-type wafer are pellets or wafers prepared by sintering with SPS or hot press. The method of claim 1, wherein each of the p-type wafer and the n-type wafer has a thickness of 0.1 mm to 2 mm. delete delete The method of claim 1, wherein the inorganic powder comprises at least one of a metal oxide, a metal carbide, and a metal hydroxide. The thermoelectric module of claim 1, wherein the curable material comprises at least one of silicone resin, acrylic, polyurethane, epoxy, polyimide, and polyamide. Manufacturing method. The method of claim 1, wherein the obtaining of the rod comprises:
Primary slicing the stack along a direction perpendicular to the base surface of the stack to obtain a block in which p-type thermoelectric bars and n-type thermoelectric bars are alternately stacked; And
And slicing the block in a direction intersecting the primary slicing surface. delete Thermoelectric module characterized in that produced by the manufacturing method according to claim 1. delete delete delete delete

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