KR101994895B1 - Apparatus for processing substrate - Google Patents

Abstract

The present invention provides a substrate processing apparatus capable of preheating a substrate in a transfer chamber connected between a first chamber and a second chamber.
A substrate processing apparatus according to an embodiment of the present invention includes a transfer chamber forming a moving space of a substrate between a first chamber and a second chamber, the inside of which is maintained in a vacuum state; A transfer robot installed in the transfer chamber for transferring the substrate; And a heating unit installed in the transfer chamber for transferring radiant energy to a substrate which is seated on the transfer robot and moved to a heating position.

Description

[0001] APPARATUS FOR PROCESSING SUBSTRATE [0002]

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus connected between a first chamber and a second chamber to heat-treat a substrate.

In a semiconductor manufacturing process, a substrate is transported into a process chamber that performs various processes, and processing according to each process chamber is performed on the substrate. In such a semiconductor manufacturing process, it is necessary that the substrate to be processed be heated so as to maintain a certain temperature or more in the process chamber.

For example, a photoresist used as a mask in forming various fine circuit patterns, such as a line or space pattern on a substrate or in an ion implantation process, And is removed from the substrate through an ashing process.

In the ashing process, the plasma generated from the gas supplied while the substrate is placed on the substrate support heated at a high temperature (200 to 300 ° C) is reacted with the photoresist to remove the photoresist. Here, the energy required for the reaction between the plasma and the photoresist is obtained from the heat energy supplied to the substrate.

In order to supply thermal energy to the substrate in such an ashing process, the substrate is typically placed on a heated substrate support in a process chamber to transfer heat from the substrate support to the substrate. However, in the case of a process chamber that maintains a vacuum state, the medium for heat transfer from the substrate support to the substrate is thin, which makes it difficult to transfer thermal energy. Thus, a pressure increase is artificially induced by injecting a large amount of gas, such as oxygen (O ₂ ) or nitrogen (N ₂ ), to form a heat transfer medium from the substrate support to the substrate, The substrate was placed on the heated substrate support to supply heat energy.

However, the process time required in such a process not only deteriorates the productivity of the semiconductor manufacturing facility, but also the sudden change of the substrate temperature due to the pressure increase is caused by the difference in thermal expansion coefficient between the substrate and the specific film formed on the substrate, (warpage) and thermal stress.

In addition, in the semiconductor manufacturing process, the substrate is loaded or unloaded by repeating the atmospheric pressure state and the vacuum state by using the load lock chamber to transfer the substrate to the transfer chamber and the process chamber. In such a load lock chamber, The temperature of the substrate is lowered. When the substrate having a low temperature is brought to a rapid temperature rise in the process chamber by the above-described method, the warping of the substrate and the generation of thermal stress are further intensified, There was a problem that had a serious effect.

KR 10-2009-0088608 A

The present invention provides a substrate processing apparatus capable of preheating a substrate in a transfer chamber connected between a first chamber and a second chamber.

A substrate processing apparatus according to an embodiment of the present invention includes a transfer chamber for forming a moving space of a substrate between a first chamber and a second chamber; A transfer robot installed in the transfer chamber for transferring the substrate; And a heating unit installed in the transfer chamber for transferring radiant energy in a vacuum state to a substrate which is seated on the transfer robot and moved to a heating position.

The heating unit includes: a light emitting unit including a heating lamp and a supporting member to which the heating lamp is mounted; And a blocking member extending from the outside of the heating lamp toward the heating position and having a hollow interior space.

A plurality of the heating lamps may be radially arranged.

Sectional area of the inner space surrounded by the end portion of the blocking member may be larger than the area of the substrate.

The blocking member may have a light reflective inner surface.

The heating unit may further include a gas supply member for injecting gas into the inner space of the blocking member.

The gas supply member can inject gas through the support member.

The heating unit may further include a flow control member for controlling a flow path of the gas.

The flow control member may include a light transmitting body disposed on a front surface of the light emitting unit, and the light transmitting body may be spaced apart from the inner surface of the light emitting unit and the blocking member.

The transfer robot includes: a robot arm on which a substrate is placed; A connecting portion rotatably connected to the robot arm; And a support shaft connected to the connection portion so as to be rotatable, and a heat insulating member formed on a surface of the robot arm contacting the substrate may be provided at one end of the robot arm.

The support shaft may move in the axial direction to adjust an interval between the substrate and the heating unit.

At least one of the first chamber and the second chamber includes a load lock chamber and the heating position may be located in a position adjacent to the load lock chamber within the transfer chamber.

The transfer chamber may include at least one exhaust port for exhausting gas injected from the gas supply member, and the exhaust port may be disposed opposite the heating section with the heating position interposed therebetween.

According to the substrate processing apparatus according to the embodiment of the present invention, the substrate is heated by the radiant energy in the transfer chamber kept in a vacuum state, thereby uniformly utilizing the waiting time before the transfer without raising the artificial pressure for transferring heat energy The substrate can be preheated, thereby improving the productivity.

Further, a blocking member extending from the outside of the light emitting unit for emitting radiant energy toward the heating position is provided to prevent the radiant energy emitted from the light emitting unit from being transmitted to the transfer robot and other devices provided in the transfer chamber It is possible to prevent the solvent component and the fume of the photoresist, which are generated when the substrate is heated, from being scattered.

In addition, by controlling the gas injected into the inner space of the blocking member to flow along the inner wall of the blocking member, it is possible to more effectively prevent the processing by-products from scattering and accumulating on the blocking member, By discharging the gas injected by the exhaust port and the process by-products, contamination of the transfer chamber due to internal accumulation of the process by-products can be prevented.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention; FIG.
FIG. 2 is a schematic view of the components of a heating unit according to an embodiment of the present invention; FIG.
3 is a view showing a state in which a plurality of heating lamps are arranged in a light emitting unit;
4 is a view showing a state in which the temperature of the substrate is controlled by adjusting the distance between the heating part and the substrate.
5 is a view showing a gas flow path of a heating section according to an embodiment of the present invention;

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, Is provided to fully inform the user. Wherein like reference numerals refer to like elements throughout.

1 is a view schematically showing a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1, a substrate processing apparatus according to an embodiment of the present invention includes a transfer chamber 10 that forms a moving space of a substrate W between a first chamber and a second chamber; A transfer robot (20) installed in the transfer chamber (10) and transferring the substrate (W); And a heating unit 30 installed in the transfer chamber 10 for transferring radiant energy to the substrate W placed on the transfer robot 20 and moved to a heating position in a vacuum state.

The transfer chamber 10 forms a moving space of the substrate W between the first chamber and the second chamber. The first chamber and the second chamber may be the process chamber 50 or the load lock chamber 70 and the transfer chamber 10 may be between the process chambers 50 and between the load lock chambers 70, 50 and the load lock chamber 70. In this case,

The process chamber 50 forms a space therein for various reactions for the production of semiconductors. The process chamber 50 may include any process chamber 50 that performs a fabrication process such as deposition, etching, or etching of a semiconductor, A process chamber 50 for performing an ashing process for forming various fine circuit patterns such as a space pattern or the like and for removing a photoresist used as a mask in an ion implantation process can do. In such an ashing process, much more process by-products are generated than in other processes, and the problem of contamination by the solvent component of the photoresist and the fume occurs when the substrate W is heated.

The load lock chamber 70 provides an interface between the atmospheric pressure state outside the load lock chamber 70 and the vacuum state of the transfer chamber 10. That is, the load lock chamber 70 is provided to bring the loaded substrate W into a vacuum state at atmospheric pressure, and the substrate W is transferred between the load lock chamber 70 and the transfer chamber 10 through the slit valve Lt; / RTI > In addition, the load lock chamber 70 may have pumping means for exhausting the internal air to form a vacuum.

The transfer chamber 10 is disposed between the process chamber 50 and the load lock chamber 70 and transfers the substrate W in the load lock chamber 70 to the process chamber 50, The interior is kept in a vacuum state to transfer the substrate W to the load lock chamber 70. A transfer robot 20 for transferring the substrate W between the process chamber 50 and the load lock chamber 70 is also provided in the transfer chamber 10. The planar shape of the transfer chamber 10 is not limited to the process chamber 50 and the load lock chamber 70 which are connected to the transfer chamber 10, And may be formed in various shapes such as hexagonal or octagonal depending on the shape and the number of holes.

The heating section 30 is installed in the transfer chamber 10, for example, above the transfer chamber 10. In general, when the processing time is short, the waiting time of the substrate W in the transfer chamber 10 is short. However, if the processing time is long, the waiting time of the substrate W in the transfer chamber 10 becomes long. The substrate W placed on the transfer robot 20 for transferring the substrate W from the load lock chamber 70 to the process chamber 50 is moved to the heating position to preheat the substrate W using the above- The time required for heat transfer of the substrate W in the process chamber 50 can be reduced. In addition, this preheating process can improve the productivity because the time required for the substrate W to wait in the transfer chamber 10 in the transfer chamber 10 is utilized.

The heating unit 30 is installed in the transfer chamber 10 and transfers the radiant energy to the substrate W which is seated on the transfer robot 20 and moved to the heating position. As described above, since the transfer chamber 10 is kept in a vacuum state, the medium for transferring heat to the substrate W is thin, and it is difficult to transfer thermal energy. The substrate processing apparatus according to the embodiment of the present invention transfers the radiant energy to the substrate W placed on the transfer robot 20 installed in the transfer chamber 10 to heat the substrate W. In other words, there is no need for a medium for transferring heat energy as compared with a method in which heat is conducted to the substrate W by placing the substrate W directly on a heating means such as a substrate supporting unit, Can be heated.

The heating position of the heating unit 30 as shown in the drawing is a position adjacent to the load lock chamber 70 in the transfer chamber 10, that is, a wall surface that is connected to the load lock chamber 70 in the transfer chamber 10 As shown in FIG. In this case, the substrate W can be heated from immediately after the substrate W loaded in the load lock chamber 70 is transferred to the transfer chamber 10 (for example, at the time when the transfer of the substrate by the transfer robot is completed) So that the waiting time in the transfer chamber 10 can be maximized to preheat the substrate W, thereby improving the productivity. In this case, the heating unit 30 may heat the substrate W positioned at each heating position to a different temperature, or alternatively, Of course it is.

The heating unit 30 according to the embodiment of the present invention is installed on a heating position and is placed on the transfer robot 20 and irradiates energy to the substrate W moved to the heating position in the form of infrared rays and transfers it to the substrate W. [ When the light is dispersed in the spectrum, it is the infrared ray which is outside the end of the red spectrum. Light is generally well reflected when its wavelength is short, and has a property of being absorbed well when it reaches a long object. Therefore, the heating unit 30 can directly transfer radiant energy as a form of infrared rays to the substrate W held on the transfer robot 20 in an environment in which a medium for heat transfer to the substrate W is maintained in a vacuum state, So that the substrate W can be effectively heated from the inside.

FIG. 2 is a view schematically showing the constituent elements of the heating unit according to the embodiment of the present invention, and FIG. 3 is a view showing a state in which a plurality of heating lamps are arranged in the light emitting unit.

2 and 3, the substrate processing apparatus according to the embodiment of the present invention includes a transfer chamber 10 and a transfer robot 20, which are installed in the transfer chamber 10 and transfer the radiant energy to the substrate W, Wherein the heating unit includes a light emitting unit including a heating lamp and a support member for mounting the heating lamp; And a blocking member 320 extending from the outside of the heating lamp 312 toward the heating position and having a hollow interior space.

The light emitting unit 310 emits radiant energy toward the substrate W which is seated on the transfer robot 20. The plurality of heating lamps 312 may be mounted on the supporting member 314 in such a manner that the plurality of heating lamps 312 are mounted on the supporting member 314 . Although an example is shown in which a separate support member 314 is provided on the upper surface of the transfer chamber 10, the support member 314 may be installed through the wall of the transfer chamber 10 .

The heating lamp 312 may be a bulb type or a linear type. The heating lamp 312 may be a halogen lamp, an arc lamp, an infrared lamp, or the like, Release. The heating lamp 312 may be a tubular tube having an empty interior. When the halogen lamp is implemented as a halogen lamp having a wavelength band of 0.8 μm to 4 μm, a tungsten filament for generating radiant energy is provided. In this case, the lamp body accommodating the tungsten filament may be made of glass or quartz, through which the radiant energy can be transmitted without loss. It is also effective that the inside of the lamp body is filled with an inert gas such as argon gas.

A plurality of heating lamps 312 are radially arranged on a region including the heating position. The radial type means a structure in which the heating lamps are arranged extending from the central portion of the support member 314 to the outside when the center portion of the heating position, for example, the support member 314 is formed to have the region corresponding to the heating position, In this case, the plurality of heating lamps may be arranged along a plurality of concentric circles arranged from the central portion of the support member 314. When the heating lamp 312 is radially arranged as described above, the substrate W can be heated to a uniform temperature.

In addition, the heating lamps 312 may be arranged so as to have different arrangements in a plurality of regions on one surface of the support member 314. [ That is, the support member 314 is divided into a plurality of regions according to the distance from the central point, and the heating lamps 312 disposed in the central region and the heating lamps 312 disposed in the peripheral region, As shown in Fig. For example, the heating lamps 312 disposed in the central region are arranged to have honeycomb arrangements having a dense structure, the heating lamps 312 disposed in the peripheral region are arranged in a concentric arrangement, The substrate W can be heated to a uniform temperature even when a gradient occurs.

In the substrate processing apparatus according to the embodiment of the present invention, since the substrate W is heated while being placed on the transfer robot 20, the transfer robot 20 is brought into contact with the substrate W in the substrate W The temperature of the region is lower than that of the other region, so that a temperature gradient may occur. Therefore, the heating lamps 312 are arranged in different arrangements in the contact area where the transfer robot 20 and the substrate W are in contact with each other and in the outside area except the contact area between the transfer robot 20 and the substrate W in the substrate W, As shown in FIG.

The blocking member 320 is seated on the transfer robot 20 from the outside of the heating lamp 312 and extends toward the heating position of the moved substrate W. [ When the heating lamp 312 is installed on one side of the supporting member 314 as shown in the figure, the blocking member 320 may extend from the outside of the supporting member 314 in the direction of transmission of the radiant energy, have. The blocking member 320 may be formed to have a hollow inner space to form a transfer path of radiant energy emitted from the light emitting unit 310. [ At this time, the upper end connected to the support member 314 may be formed so as to extend in a curved line so as to increase the internal cross-sectional area toward the lower part in order to smoothly flow the gas to be described later. The lower end portion may be formed so that the cross sectional area of the inner space of the blocking member 320 surrounded by the end portion is larger than that of the substrate W to discharge the gas to the outside of the substrate W. [ The flow path of the gas by the blocking member 320 having the above-described shape will be described later with reference to FIG.

The blocking member 320 prevents the radiant energy emitted from the light emitting unit 310 from being transmitted to the transfer robot 20 and other devices provided in the transfer chamber 10, (W) forms a propagation path of radiant energy for efficient heating. The blocking member 320 may be formed of a material having a high reflectivity to prevent the radiant energy emitted from the light emitting unit 310 from being transmitted to the outside of the blocking member 320 and to effectively reflect the radiant energy inside the blocking member 320. [ Surface. For example, the blocking member 320 may be formed of a metal such as aluminum to efficiently reflect radiant energy. In this case, the inner surface may be polished to improve reflectance.

4 is a view showing a state in which the temperature of the substrate is controlled by adjusting the distance between the heating unit and the substrate.

The substrate processing apparatus according to the embodiment of the present invention transfers the radiant energy to the substrate W placed on the transfer robot 20 and transfers the substrate W to the transfer chamber 10 at a temperature of 250 ° C or higher and 300 ° C or lower Preheat to a range. The preheating temperature of the substrate W is higher than the temperature of the substrate W in the load lock chamber 70 and can be set to be equal to or lower than the temperature of the substrate W in the processing chamber 50. [ In this case, the temperature of the substrate W may be controlled by controlling the power application time of the light emitting unit 310, for example, the halogen lamp, and the substrate W and the heating unit 30 ) May be adjusted.

The transfer robot 20 includes a robot arm 220 on which the substrate W is placed; Connection portions (230, 240) rotatably connected to the robot arm (220); And a support shaft 250 to which the connection portions 230 and 240 are rotatably connected. The transfer robot 20 places the substrate W waiting in the load lock chamber 70 on the robot arm 220 and enters the transfer chamber 10 to transfer the substrate W to the process chamber 50, . To this end, an end effector is formed at one end of the robot arm 220, and the other end of the robot arm 220 is connected to the connection portions 230 and 240 so as to be rotatable. The connection portions 230 and 240 may include a first connection portion 230 and a second connection portion 240 that are rotatably coupled to each other and one end of the connection portions 230 and 240 may be connected to the robot arm 220, and the other ends of the connection portions 230, 240 are rotatably coupled to the support shaft 250. As shown in FIG. The support shaft 250 rotates the connection portions 230 and 240 and can be installed to be movable in the axial direction.

Here, since the substrate W is mounted on one end of the robot arm 220 and heated, one end of the robot arm 220 may be provided with a heat insulating material formed on a surface contacting the substrate W. [ The heat insulating member may be formed of a heat insulating pad formed on one end of the robot arm, or may be formed by covering one end of the robot arm with a heat insulating material. In addition, the robot arm 220 may be provided with a plurality of heaters for simultaneously mounting a plurality of substrates. In this case, heat insulating materials may be provided on the surfaces of the robot arm 220 and the substrate W, to be.

Accordingly, the substrate processing apparatus according to the embodiment of the present invention can adjust the heating temperature of the substrate W by moving the support shaft 250 in the axial direction. That is, the substrate W is heated by the radiant energy transferred from the heating unit 30 in a state of being mounted on the robot arm 220. At this time, the support shaft 250 is moved in the axial direction, The heating temperature of the substrate W can be adjusted by adjusting the interval between the heating units 30. [ The interval between the substrate W and the heating unit 30 may be determined according to a predetermined value according to the heating temperature of the substrate W. [

5 is a view showing a gas flow path of a heating section according to an embodiment of the present invention.

5, a substrate processing apparatus according to an embodiment of the present invention includes a transfer chamber 10 installed in a transfer chamber 10 to transfer radiant energy to a substrate W placed on the transfer robot 20, The heating unit 30 includes a heating unit 30 and a light emitting unit 310 including a heating member 312 and a supporting member 314. The heating unit 30 includes a heating lamp 312 and a supporting member 314, A gas supply member 330 for injecting gas into the inner space of the blocking member 320 in addition to the hollow member 320 which is extended; And a flow control member for controlling the flow path of the injected gas.

The gas supply member 330 continuously injects gas into the interior of the blocking member 320. The process chamber 50 may be a process chamber 50 where the ashing process is performed and the process chamber 50 may be any process chamber that performs a fabrication process such as deposition, The process chamber 50 may include various types of fine circuit patterns such as a line or a space pattern on the substrate W or a mask And a process chamber 50 for performing an ashing process for removing the photoresist used as the photoresist. In such an ashing process, much more process by-products are generated than in other processes, and the problem of contamination by the solvent component of the photoresist and the fume occurs when the substrate W is heated.

Accordingly, the substrate processing apparatus according to the embodiment of the present invention includes a shielding member 320 that forms a path for transmitting radiant energy to the heating unit 30 that transfers and radiates radiant energy to the substrate W, A solvent component and a fume of the photoresist which are generated when the substrate W is heated are scattered from the substrate W and are injected into the inside of the heating unit 30 And the blocking member 320 can be prevented from being accumulated. The gas injected from the gas supply member 330 may be an inert gas such as argon (Ar) gas or nitrogen (N ₂ ), and the gas supply member 330 may be installed on the support member 314 Gas can be injected into the blocking member 320.

The gas injected from the gas supply member 330 does not serve as an intermediary for supplying heat to the substrate W and the byproduct generated during the heating of the substrate W is supplied to the heating unit 30, In order to prevent accumulation in the interior of the housing. Accordingly, it is possible to block a fraction of the amount of discharge of the gas is also a by-product rather than the amount of the gas supplied for the purpose of the artificial increase in pressure for the heat transfer to the substrate (W), The transfer chamber 10 by the 10 ^-1 torr It is possible to maintain a high vacuum state with a pressure equal to or lower than the pressure. It goes without saying that the by-product generated when the substrate W is heated may be prevented from being discharged to the outside of the heating unit 30, that is, the blocking member 320.

Here, the gas supply member 330 may include a gas supply pipe for injecting an inert gas, and the gas injected from the gas supply member 330 may pass through the support member 314, Can be injected into the space. A gas supply member 330 may be inserted into a center of the support member 314 through which the center of the support member 314 penetrates and a plurality of gas supply members 330 may be provided on the support member 314 Can be inserted. In addition, it is also possible to form a gas movement path having a jet opening formed in the mounting surface of the heating lamp 312 in the inner space of the support member 314, and to connect the gas supply member 330 to the gas movement path Structure.

Further, the heating unit 30 may further include a flow control member for controlling the flow path of the gas injected from the gas supply member 330. The flow control member controls the flow path of the gas so that the gas injected from the gas supplying member 330 flows along the inner surface of the blocking member 320 and is generated when the substrate W is heated in the form of an air curtain A solvent component of the photoresist and a by-product such as a fume can be prevented from adhering to the inner wall of the blocking member 320. When the gas injected from the gas supplying member 330 is formed to flow along the inner surface of the blocking member 320, the solvent of the photoresist discharged from the substrate W and scattered to the inner wall of the blocking member 320 the solvent component and the fume can be discharged along the spacing space between the inner wall of the blocking member 320 and the substrate W. [

Here, the flow control member includes a light transmitting body 340 disposed on the front surface of the light emitting unit 310, and the light transmitting body 340 is disposed inside the light emitting unit 310 and the blocking member 320 And can be installed separately from the surface.

The light transmitting body 340 is disposed on the front surface of the light emitting unit 310 and not only transmits the radiation energy emitted from the light emitting unit 310 but also transmits the solvent component of the photoresist It is possible to prevent the fume from adhering to the light emitting unit 310. The light transmitting body 340 may be formed in the shape of a plate and may have a size including a region including all the plurality of heating lamps 312 formed in the light emitting unit 310. In addition, the light transmitting body 340 may be formed in the form of a convex or concave lens to diffuse or concentrate radiation energy. The light transmitting body 340 may be formed of a transparent material to transmit radiation energy emitted from the light emitting unit 310. For example, the light transmitting unit 340 may include a light emitting unit 310, And may be formed of a material or structure that selectively transmits radiation energy of a specific wavelength for optimal heat transfer to the substrate W, such as cutting off other wavelength bands.

The light transmitting body 340 may be spaced apart from the inner surface of the light emitting unit 310 and the blocking member 320, respectively. A support pin (not shown) having a predetermined length is provided in the light emitting unit 310 to provide the light transmitting body 340 so as to be spaced apart from the inner surfaces of the light emitting unit 310 and the blocking member 320, It is also possible to fix the light transmitting body 340 by fixing the light transmitting body 340 on the inner surface of the shielding member 320 or by providing such support pins on the inner surface of the shielding member 320.

The spacing space between the light emitting unit 310 and the light transmitting body 340 and the spacing space between the light transmitting body 340 and the inner surface of the blocking member 320 form a flow path of the gas injected from the gas supplying member 330 do. The gas injected into the center of the light emitting unit 310 flows to the edge of the light emitting unit 310 along the spacing space between the light emitting unit 310 and the light transmitting body 340 as shown by the dotted line in FIG. The gas flowing to the edge of the light emitting unit 310 can also flow from the spacing space between the light transmitting body 340 and the inner surface of the blocking member 320 along the inner surface of the blocking member 320, The solvent component of the photoresist and the fume generated during the heating of the substrate W are controlled by controlling the flow path of the gas so that the gas injected from the supply member 330 flows along the inner surface of the blocking member 320. [ Can be prevented from accumulating on the inner wall of the blocking member 320, and can be prevented from being discharged to the outside of the heating unit 30.

The transfer chamber 10 according to the embodiment of the present invention may include at least one exhaust port 110 installed on one surface thereof for discharging gas injected from the gas supply member 330, The heating unit 110 may be arranged to face the heating unit 30 with the heating position in between. The transfer chamber 10 transfers the substrate W in the load lock chamber 70 to the process chamber 50 and transfers the substrate W in the process chamber 50 to the load lock chamber 70, The transfer chamber 10 may include at least one exhaust port 110 to maintain such a vacuum state. An exhaust line 120 communicating with the internal space of the transfer chamber 10 is provided in the exhaust port 110. The exhaust line 120 is connected to the vacuum pump 130 and is connected to the exhaust port 120 by the suction force of the vacuum pump 130. [ The gas discharged from the port 110 is discharged along the exhaust line 120.

Here, the exhaust port 110 may be disposed so as to face the heating unit 30 with the heating position of the substrate W therebetween. That is, the exhaust port 110 may include at least one exhaust port 110 in the lower region of the transfer chamber 10 opposed to the light emitting unit 310, for example, when the light emitting unit 310 is installed on the upper portion of the transfer chamber 10 .

The exhaust port 110 may be disposed at a lower portion of the transfer chamber 10 so as to face the heating unit 30 installed at the upper portion of the transfer chamber 10, The gas injected from the gas supplying member 330 flows along the inner surface of the blocking member 320 and the gas exhausted to the edge of the substrate W flows through the exhaust port 110. [ So that the flow path of the gas can be controlled to be discharged. Accordingly, the solvent component and the fume of the photoresist, which are generated when the substrate W is heated, can flow to the edge of the substrate W and can be discharged to the exhaust port 110, It is possible to effectively prevent contamination in the container 10.

While the preferred embodiments of the present invention have been described and illustrated above using specific terms, such terms are used only for the purpose of clarifying the invention, and the embodiments of the present invention and the described terminology are intended to be illustrative, It will be obvious that various changes and modifications can be made without departing from the spirit and scope of the invention. Such modified embodiments should not be individually understood from the spirit and scope of the present invention, but should be regarded as being within the scope of the claims of the present invention.

10: Transfer chamber 20: Transfer robot
30: heating section 50: process chamber
70: load lock chamber 110: exhaust port
120: exhaust line 130: vacuum pump
220: robot arm 230, 240:
250: support shaft 310: light emitting unit
312: heating lamp 314: supporting member
320: blocking member 330: gas supply member
340: light transmitting body

Claims (13)

A transfer chamber forming a transfer space of the substrate between the first chamber and the second chamber;
A transfer robot installed in the transfer chamber for transferring the substrate; And
And a heating unit installed in the transfer chamber for transferring radiant energy in a vacuum state to a substrate moved to the heating position by being placed on the transfer robot,
The heating unit includes:
A light emitting unit;
A blocking member extending from the outside of the light emitting unit toward the heating position to form an inner space;
A gas supply member for injecting gas into the inner space of the blocking member; And
Wherein the light emitting unit and the blocking member are disposed on the front surface of the light emitting unit so as to be spaced apart from the inner surface of the light emitting unit and the blocking member, And a flow control member that forms a flow path to flow toward an edge of the flow control member,
The inner surface of the blocking member is formed into a curved surface whose inner cross-sectional area increases along the extending direction,
Wherein the flow control member includes a light transmitting body that transmits radiation energy emitted from the light emitting unit.
The method according to claim 1,
Wherein the light emitting unit includes a heating lamp and a supporting member to which the heating lamp is mounted.
The method of claim 2,
Wherein the plurality of heating lamps are radially arranged.
The method according to claim 1,
Sectional area of the inner space surrounded by the end portion of the blocking member is larger than the area of the substrate.
The method according to claim 1,
Wherein the blocking member has a light reflective inner surface.
delete The method according to claim 1,
Wherein the gas supply member penetrates the support member to inject gas.
delete delete The method according to claim 1,
The transfer robot includes:
A robot arm on which the substrate is seated;
A connecting portion rotatably connected to the robot arm; And
And a support shaft connected to the connection portion so as to be rotatable,
Wherein the one end of the robot arm is provided with a heat insulating material formed on a surface contacting the substrate.
The method of claim 10,
And the support shaft moves in the axial direction to adjust an interval between the substrate and the heating unit.
The method according to claim 1,
Wherein at least one of the first chamber and the second chamber includes a load lock chamber,
Wherein the heating position is located in a position adjacent to the load lock chamber within the transfer chamber.
The method according to claim 1,
Wherein the transfer chamber includes at least one exhaust port for exhausting the gas injected from the gas supply member,
Wherein the exhaust port is disposed opposite to the heating section with the heating position interposed therebetween.

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