KR101978514B1 - Resist stripper composition and method of stripping resist using the same - Google Patents

Abstract

(A) from 0.1 to 20% by weight of a compound represented by the formula (1), (b) from 60 to 95% by weight of an organic solvent, and (c) from 3 to 20% by weight of a basic compound, based on the total weight of the composition The resist stripper composition comprising:
[Chemical Formula 1]

Description

Resist stripper liquid composition and stripping method of resist using the resist stripper composition

The present invention relates to a resist stripping liquid composition and a stripping method of a resist using the same.

In recent years, efforts have been made to increase the number of pixels per unit area as the demand for high-resolution implementation of flat panel displays increases. In accordance with this tendency, reduction of the wiring width is also required, and in order to cope with this, the dry etching process has been introduced, and the process conditions have become increasingly severe. In addition, due to the enlargement of the flat panel display device, an increase in the signal speed in the wiring is also required, and copper having a lower resistivity than aluminum is now being used as a wiring material. Accordingly, the required performance of the stripping solution used in the stripping process, which is a resist stripping process, is increasing. Specifically, a considerable level of exfoliation characteristics is required for the removal power against etch residue generated after the dry etching process and the corrosion inhibiting ability against metal wiring. In particular, corrosion resistance to copper as well as aluminum is required, and in order to secure price competitiveness, economic efficiency such as increase in the number of processed substrates is also required.

As a conventional technique proposed to meet the above requirements, Korean Patent Laid-Open No. 10-2006-0117666 discloses a release agent composition comprising a water-soluble organic amine, a solvent, and a benzotriazole-based anticorrosive agent. However, the exfoliant composition causes a problem that the benzotriazole based anticorrosion agent remains on the substrate.

Korean Patent Laid-Open No. 10-2008-0043076 discloses a composition for removing resist and dry etching residue, which comprises a phosphate ester and (poly) phosphoric acid ammonium salt. However, in the composition for removing the resist and the dry etching residue, the acidic component may corrode the metal wiring.

Korean Patent Publication No. 10-2006-0117666 Korean Patent Publication No. 10-2008-0043076

SUMMARY OF THE INVENTION The present invention has been made to overcome the problems of the prior art as described above, and it is an object of the present invention to provide a resist stripper composition which is excellent in resist pattern, dry / wet etch residue removal capability, And the like.

According to the present invention,

(A) a resist stripping solution containing 0.1 to 20% by weight of a compound represented by the formula (1), (b) 60 to 95% by weight of an organic solvent, and (c) 3 to 20% by weight of a basic compound, based on the total weight of the composition A composition is provided:

[Chemical Formula 1]

In this formula,

(C1-C4) alkyl, and C5-C20 aryl, C5-C20 aryl, or C5-C20 aryl, wherein each of R1, R2 and R3 is independently selected from the group consisting of hydrogen, C1 to C15 linear or branched alkyl, C1 to C12 alkoxy, C3 to C12 cycloalkyl, C20 arylalkyl and 2- (diphenylphosphinyl) ethyl]. ≪ / RTI >

In addition,

(I) depositing a conductive metal film on a flat panel display substrate,

(II) forming a resist film on the conductive metal film;

(III) selectively exposing the resist film;

(IV) developing the exposed resist film to form a resist pattern;

(V) etching the conductive metal film using the resist pattern as a mask; And

(VI) a step of peeling the resist from the substrate using the resist stripping liquid composition of the present invention after the etching process.

In addition,

There is provided a method of manufacturing a flat panel display device, which comprises a step of peeling off a resist for a flat panel substrate using the resist stripping liquid composition of the present invention.

The resist stripper composition of the present invention has excellent resist pattern and dry / wet etch residue removal ability and is excellent in corrosion resistance against metal wiring. Therefore, in order to realize high resolution, a process for manufacturing a flat panel display device using a fine pattern, It can be usefully used in a manufacturing process of a flat panel display device in which wiring is used.

According to the present invention,

(A) a resist stripping solution containing 0.1 to 20% by weight of a compound represented by the formula (1), (b) 60 to 95% by weight of an organic solvent, and (c) 3 to 20% by weight of a basic compound, based on the total weight of the composition ≪ / RTI >

[Chemical Formula 1]

In this formula,

(C1-C4) alkyl, and C5-C20 aryl, C5-C20 aryl, or C5-C20 aryl, wherein each of R1, R2 and R3 is independently selected from the group consisting of hydrogen, C1 to C15 linear or branched alkyl, C1 to C12 alkoxy, C3 to C12 cycloalkyl, C20 arylalkyl and 2- (diphenylphosphinyl) ethyl]. ≪ / RTI >

In Formula 1, C5-C20 aryl may be phenyl or naphthyl, and C5-C20 arylalkyl may be benzyl or naphthylmethyl.

More specifically, the compound represented by Formula 1 may be at least one selected from the group consisting of trimethylphosphine oxide, tri-N-butylphosphine oxide, tricyclohexylphosphine oxide, trioctylphosphine oxide, (methoxymethyl) diphenylphosphine oxide, Octylphosphine oxide, octylphosphine oxide, 1,2-ethylene bis (diphenylphosphine oxide), diphenylethylphosphine oxide, tribenzylphosphine oxide, triethylphosphine oxide, triphenylphosphine oxide, Pinoxid, cyclohexyldiphenylphosphine oxide, methyldiphenylphosphine oxide, and the like.

The compound represented by Formula 1 may be contained in an amount of 0.1 to 20 wt%, more preferably 1 to 10 wt%, and still more preferably 1 to 5 wt% based on the total weight of the composition. .

If the amount of the compound represented by the formula (1) is less than 0.1% by weight, the effect of the method is insufficient. If the amount of the compound represented by the formula (1) is more than 20% by weight, dissolution or re-precipitation of the particles may occur.

The organic solvent (b) may be at least one selected from the group consisting of ethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol, diethylene glycol monomethyl ether, diethylene glycol monoethyl Diethylene glycol monobutyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, diethylene glycol dimethyl ether, diethylene glycol Diethylene glycol dibutyl ether, dipropylene glycol dimethyl ether, dipropylene glycol diethyl ether, dipropylene glycol dipropyl ether, dipropylene glycol dibutyl ether, tetrahydrofuran furyl alcohol, hexanol, heptanol , Glycerol, etc. A quantum-polar solvent such as a hydride-containing group;

Pyrrolidone compounds such as N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-hydroxyethyl-2-pyrrolidone and N-cyclohexyl- N, N-dimethylformamide, N-ethylformamide, N, N-ethylformamide, N-methylacetamide, N, N-dimethylacetamide, Amide compounds such as N-dimethylacetamide and N, N-diethylacetamide, lactone compounds such as? -Lactone,? -Lactone and? -Butyrolactone, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl Ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether acetic acid Based compounds such as dipropylene glycol monopropyl ether acetate, isopropyl acetate, ethyl acetate and methyl acetate, ketones such as dimethyl ketone, diethyl ketone, methyl ethyl ketone, isopropyl ketone, methyl propyl ketone, methyl butyl ketone, methyl isobutyl ketone Ketone-based compounds such as butyl ketone and cyclohexanol, and aprotic polar solvents composed of carbonate-based compounds such as ethylene carbonate, propylene carbonate, dimethyl carbonate and sodium carbonate. These may be used alone or in combination of two or more.

The organic solvent may be contained in an amount of 60 to 95% by weight based on the total weight of the composition. In the case where it is included in the above-mentioned content range, it is advantageous to exhibit the removal performance of the resist polymer modified or crosslinked by etching or the like, and the problem that the content of relatively different components is excessively reduced can be avoided.

The basic compound (c) strongly penetrates into the polymer matrix of the modified or crosslinked resist under various process conditions such as dry or wet etching, ashing or ion implant processing, It serves to break bonds existing between molecules. The action of such a basic compound is to form an empty space in a structurally weak portion in the resist remaining on the substrate, thereby deforming the resist into an amorphous polymer gel lump state so that the resist attached on the substrate can be easily removed .

The basic compound may be at least one selected from the group consisting of an organic basic compound and an inorganic basic compound. Examples of the basic compound include methylamine, ethylamine, monoisopropylamine, n-butylamine, sec-butylamine, isobutyl Primary amines such as amine, t-butylamine and pentylamine; There may be mentioned secondary alcohols such as dimethylamine, diethylamine, dipropylamine, diisopropylamine, dibutylamine, diisobutylamine, methylethylamine, methylpropylamine, methylisopropylamine, methylbutylamine and methylisobutylamine Amine; Tertiary amines such as trimethylamine, triethylamine, tripropylamine, tributylamine, tripentylamine, dimethylethylamine, methyldiethylamine and methyldipropylamine; But are not limited to, choline, monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, 2-aminoethanol, 2- (ethylamino) ethanol, 2- (methylamino) ethanol, Amino-2-propanol, 2-amino-1-propanol, 3-amino-1-propanol, Alkanolamines such as 4-amino-1-butanol and dibutanolamine; (Methoxymethyl) dimethylamine, (methoxymethyl) dimethylamine, (butoxymethyl) dimethylamine, (isobutoxymethyl) dimethylamine, (methoxymethyl) diethanolamine (Methoxymethyl) aminoethanol, methyl (butoxymethyl) aminoethanol, 2- (2-aminoethoxy) ethanol and the like Alkoxyamine; 1- (2-hydroxyethyl) piperazine, 1- (2-aminoethyl) piperazine, 1- Cyclic amines in which a ring such as piperazine, 1-methylpiperazine, 1-amino-4-methylpiperazine, 1-benzylpiperazine or 1-phenylpiperazine is formed; Tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, monomethyltripropylammonium hydroxide, (2-hydroxyethyl) tripropylammonium hydroxide , And quaternary ammonium salts such as (1-hydroxypropyl) trimethylammonium hydroxide. These may be used singly or in combination of two or more.

The basic compound is preferably contained in an amount of 3 to 20% by weight, more preferably 3 to 15% by weight based on the total weight of the composition.

When the basic compound is contained in the same amount as described above, it is possible to exhibit favorable peeling properties without a problem of insufficient resist peeling effect or a rapid increase in corrosion rate with respect to aluminum and copper wiring. Specifically, when the basic compound is contained in an amount of less than 3% by weight, the removal performance of the modified or crosslinked resist is lowered. If the basic compound is contained in an amount exceeding 20% by weight, corrosion of the metal wiring can be caused.

The resist stripping liquid composition of the present invention may further contain (d) water in addition to the above components.

The water (d) may be contained in an amount of 1 to 40% by weight based on the total weight of the composition. When water is added, the removal rate of the resist is increased by improving the activation of the basic compound. In the rinsing step, the organic contaminants and resist remover remaining on the substrate are quickly and completely removed, The residual removal force formed by the cleaning agent can be further improved.

In the above, it is preferable to use deionized water having a resistivity value of 18 M? / Cm or more as water for semiconductor processing.

The resist stripper composition of the present invention may further comprise at least one member selected from the group consisting of (e) a corrosion inhibitor and (f) an F-containing compound in addition to the above components.

Examples of the corrosion inhibitor include those conventionally used in this field and may be selected from the group consisting of a sulfur-containing antiseptics, sugar alcohols, polyhydric alcohols, aromatic hydroxides, azoles, imidazoles, One or more species may be used.

The corrosion inhibitor may be included in an amount of 0.1 to 5% by weight based on the total weight of the composition. When it is included in the above range, it is possible to increase the effect of preventing the corrosion of the metal wiring and to minimize the influence on other physical properties of the composition.

Examples of the F-containing compound include at least one selected from the group consisting of hydrofluoric acid, ammonium fluoride, ammonium fluoride, fluoroboric acid, ammonium fluoroborate, tetramethylammonium fluoride, tetraethylammonium fluoride, and tetrabutylammonium fluoride .

The F-containing compound may be contained in an amount of 0.01 to 3% by weight based on the total weight of the composition. When it is included in the above range, it may be effective to remove the cured resist.

The resist stripping composition of the present invention can be preferably applied to a substrate on which at least one metal wiring selected from the group consisting of metal wiring, particularly aluminum, copper and molybdenum is formed because of excellent anticorrosion property. Aluminum, copper, molybdenum, and the like are concepts that include pure aluminum, copper and molybdenum as well as alloys thereof.

The resist stripping composition of the present invention can be prepared by mixing the above-mentioned compounds in an appropriate amount.

The present invention also provides a resist stripping method characterized by using the resist stripper composition of the present invention. The above-mentioned resist peeling method is a method for peeling a resist,

(I) depositing a conductive metal film on a flat panel display substrate,

(II) forming a resist film on the conductive metal film;

(III) selectively exposing the resist film;

(IV) developing the exposed resist film to form a resist pattern;

(V) etching the conductive metal film using the resist pattern as a mask; And

(VI) separating the remaining resist from the substrate using the resist stripper composition of the present invention after the etching process.

In addition, the removing method of the present invention may be carried out by performing a dry etching process such as an etchback process or a CMP (Chemical Mechanical Polishing) process without performing a resist pattern forming process using a mask, And a method of peeling off with the peeling liquid composition of the invention.

The peeling method may be a deposition method, a spraying method, or a deposition and spraying method. In the case of peeling by immersion, spraying or immersion and spraying, the temperature for peeling is usually from 15 to 100 캜, preferably from 30 to 70 캜, and the immersion, spraying or immersion and spraying time is usually from 30 seconds to 40 minutes, Preferably 1 minute to 20 minutes, but is not strictly applied in the present invention, and can be modified in a condition that is easy and suitable for a person skilled in the art.

The resist stripping composition of the present invention and the stripping method using the resist stripping composition of the present invention can be used not only for general resist removal but also for removal of resist and etching residue which are modified or cured by etching gas and high temperature.

In addition,

There is provided a method of manufacturing a flat panel display device, which comprises a step of peeling off a resist for a flat panel substrate using the resist stripping liquid composition of the present invention.

Hereinafter, the present invention will be described in more detail with reference to examples and comparative examples. However, the following examples and comparative examples are provided for illustrating the present invention, and the present invention is not limited by the following examples, and various modifications and changes may be made.

Example  1 to 10 and Comparative Example 1 ~ 3: Resist Peeling liquid  Preparation of composition

The components and contents described in Table 1 below were mixed to prepare a resist stripper composition.

Formula 1
compound
(weight%) receptivity
Organic solvent
(weight%) Basic
compound
(weight%) Corrosion inhibitor
(weight%) F-containing compound
(weight%) water
(weight%) Example 1 C-1 4 DMSO 89 MEA 7 Example 2 C-1 5 NMF 85 MEA 10 Example 3 C-1 3 BDG 90 MIPA 7 Example 4 C-2 5 DMSO 89 MEA 6 Example 5 C-2 4 NMP 90 MEA 6 Example 6 C-2 4 BDG 89 MIPA 7 Example 7 C-2 4 BDG 74 MIPA 7 15 Example 8 C-1 4 BDG 85 MIPA 10 C-3 One Example 9 C-2 3 BDG 85.5 MIPA 10 C-3 One FBA 0.5 Example 10 C-2 4 BDG 88.5 MIPA 7 FBA 0.5 Example 11 C-1 4 BDG 78.5 MEA 7 C-3 0.5 10 Example 12 C-1 4 NMP 59 MEA 7 C-4 5 25 Comparative Example 1 NMP 90 MEA 10 Comparative Example 2 BDG 75 MIPA 10 15 Comparative Example 3 C-2 0.01 BDG 89.99 MIPA 10

 (Unit: wt%)

Note) C-1: Trimethylphosphine oxide

C-2: Triphenylphosphine oxide

C-3: benzotriazole

C-4: Sorbitol

MEA: Monoethanolamine

MIPA: Monoisopropanolamine

DMSO: dimethylsulfoxide

BDG: butyl diglycol

NMP: N-methylpyrrolidone

NMF: N-methylformamide

FBA: fluoroboric acid

Test Example  One: Peelability  And Improvisation  evaluation

Each of the substrates on which Al or Cu metal wiring was formed on the SiO ₂ insulating film, which had deteriorated photoresist residues and polymer residues after plasma etching or high-temperature ashing attached to the metal wiring and the insulating film, Examples 1 to 12 and Comparative Examples 1 to 3) for 20 minutes, the specimens were taken out from the peeling solution, rinsed with ultrapure water for 1 minute, and dried using nitrogen gas. Then, using a scanning electron microscope, the removability of the photoresist residue and polymer remaining after the dry etching or the hot ashing from the substrate on which the Al or Cu metal wiring was formed on the SiO ₂ insulating film was evaluated. The peelability and corrosion resistance were evaluated according to the following criteria. The results are shown in Table 2 below.

[Evaluation criteria for peelability]

⊚: very good, ∘: good, △: presence of some residues, X: impossible to remove residues

[Evaluation criteria for Cu etchability]

?: No corrosion,?: Almost no corrosion,?: Partial corrosion, Change in surface roughness, X: Etching

Peelability Al corrosion resistance Cu anticorrosive Example 1 ○ ○ ○ Example 2 ○ ○ ○ Example 3 ◎ ◎ ○ Example 4 ○ ○ ○ Example 5 ◎ ○ ◎ Example 6 ○ ○ ○ Example 7 ○ ○ ○ Example 8 ○ ◎ ◎ Example 9 ◎ ◎ ◎ Example 10 ◎ ○ ○ Example 11 ○ ◎ ◎ Example 12 ○ ○ ◎ Comparative Example 1 ◎ X X Comparative Example 2 ○ X X Comparative Example 3 ◎ X X

As shown in Table 2, the resist stripping liquid compositions of Examples 1 to 12 and Comparative Examples 1 to 3 exhibited excellent resist stripping performance. In addition, the resist stripping compositions of Examples 1 to 12 exhibited excellent barrier ability to aluminum and copper wiring.

However, the composition of Comparative Examples 1 to 2, which does not include the compound of Formula 1, and the composition of Comparative Example 3, which contains a very small amount of the compound of Formula 1, cause etching for aluminum and copper metal wiring, It was confirmed to be very scarce.

Claims (12)

(a) a compound represented by the following formula (1), (b) an organic solvent, and (c) a basic compound,
The basic compound (c) may be at least one selected from the group consisting of methylamine, ethylamine, monoisopropylamine, n-butylamine, sec-butylamine, isobutylamine, t-butylamine, pentylamine, dimethylamine, diethylamine, dipropylamine , Diisopropylamine, dibutylamine, diisobutylamine, methylethylamine, methylpropylamine, methylisopropylamine, methylbutylamine, methylisobutylamine, trimethylamine, triethylamine, tripropylamine, tributyl But are not limited to, amines such as amine, tripentylamine, dimethylethylamine, methyldiethylamine, methyldipropylamine, choline, monoethanolamine, diethanolamine, triethanolamine, monopropanolamine, 2- aminoethanol, 2- N-dimethylaminoethanol, N, N-diethylaminoethanol, 2- (2-aminoethylamino) -1-ethanol, 1-amino- Propanol, 2-amino-1-propanol, 3-amino-1-propanol, (Methoxymethyl) dimethylamine, (butoxymethyl) dimethylamine, (isobutoxymethyl) diethylamine, (methoxymethyl) dimethylamine, ) Methyl (methoxymethyl) aminoethanol, methyl (methoxymethyl) aminoethanol, methyl (methoxymethyl) aminoethanol, , 2- (2-aminoethoxy) ethanol, 1- (2-hydroxyethyl) piperazine, 1- Methylpiperazine, 1-amino-4-methylpiperazine, 1-benzylpiperazine, 1-phenylpiperazine, tetramethylammonium hydroxide, Tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, monomethyltripropylammonium hydroxide, (2-hydroxyethyl) Ammonium hydroxide, and (1-hydroxypropyl) trimethylammonium hydroxide would least one member selected from the group consisting of,
The organic solvent (b) is selected from the group consisting of a protonic solvent having a hydroxyl group, a pyrrolidone compound, a sulfoxide compound, an amide compound, a lactone compound, an acetate compound, a ketone compound and a carbonate compound Wherein the resist stripping liquid composition comprises:
[Chemical Formula 1]

In this formula,
(C1-C4) alkyl, and C5-C20 aryl, C5-C20 aryl, or C5-C20 aryl, wherein each of R1, R2 and R3 is independently selected from the group consisting of hydrogen, C1 to C15 linear or branched alkyl, C1 to C12 alkoxy, C3 to C12 cycloalkyl, C20 arylalkyl and 2- (diphenylphosphinyl) ethyl]. ≪ / RTI > The method according to claim 1,
(A) a resist stripping solution containing 0.1 to 20% by weight of a compound represented by the formula (1), (b) 60 to 95% by weight of an organic solvent, and (c) 3 to 20% by weight of a basic compound, based on the total weight of the composition Composition:
[Chemical Formula 1]

In this formula,
(C1-C4) alkyl, and C5-C20 aryl, C5-C20 aryl, or C5-C20 aryl, wherein each of R1, R2 and R3 is independently selected from the group consisting of hydrogen, C1 to C15 linear or branched alkyl, C1 to C12 alkoxy, C3 to C12 cycloalkyl, C20 arylalkyl and 2- (diphenylphosphinyl) ethyl]. ≪ / RTI > The method according to claim 1 or 2,
The compound represented by the formula (1) is preferably at least one compound selected from the group consisting of trimethylphosphine oxide, tri-N-butylphosphine oxide, tricyclohexylphosphine oxide, trioctylphosphine oxide, (methoxymethyl) diphenylphosphine oxide, (Triphenylphosphine oxide), triphenylphosphine oxide, triphenylphosphine oxide, triphenylphosphine oxide, tri-N-amylphosphine oxides , Cyclohexyldiphenylphosphine oxide, and methyldiphenylphosphine oxide. The resist stripper composition according to claim 1, delete The method according to claim 1,
The organic solvent (b) may be at least one selected from the group consisting of ethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol, diethylene glycol monomethyl ether, diethylene glycol monoethyl Diethylene glycol monobutyl ether, diethylene glycol monobutyl ether, triethylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, diethylene glycol dimethyl ether, diethylene glycol Diethylene glycol dibutyl ether, dipropylene glycol dimethyl ether, dipropylene glycol diethyl ether, dipropylene glycol dipropyl ether, dipropylene glycol dibutyl ether, tetrahydrofuran furyl alcohol, hexanol, heptanol , Glycerol, N- Pyrrolidone, N-ethyl-2-pyrrolidone, N-hydroxyethyl-2-pyrrolidone, N-cyclohexyl-2-pyrrolidone, dimethylsulfoxide, diethylsulfoxide, N-dimethylformamide, N, N-dimethylformamide, N, N-ethylformamide, N-methylacetamide, N, N-dimethylacetamide, N, ,? -lactone,? -lactone,? -butyrolactone, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether Acetate, diethylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether acetate, dipropylene glycol monopropyl ether acetate, isopropyl acetate, ethyl acetate Methyl ethyl ketone, methyl isobutyl ketone, cyclohexanol, ethylene carbonate, propylenecarbonate, dimethyl carbonate, and sodium carbonate in a solvent such as methanol, ethanol, propanol, And the resist stripping liquid composition is at least one selected from the group consisting of delete The method according to claim 1 or 2,
Wherein the resist stripping liquid composition further comprises (d) water. The method according to claim 1 or 2,
Wherein the resist stripping liquid composition further comprises at least one member selected from the group consisting of (e) a corrosion inhibitor and (f) an F-containing compound. The method of claim 8,
(F) the F-containing compound is at least one selected from the group consisting of hydrofluoric acid, hydrofluoric acid, hydrofluoric acid, hydrofluoric acid, hydrofluoric acid, Wherein the resist stripping liquid composition is at least one selected from the group consisting of ammonium fluoride , ammonium fluoride , fluoroboric acid, ammonium fluoroborate, tetramethylammonium fluoride, tetraethylammonium fluoride and tetrabutylammonium fluoride . The resist stripping composition according to claim 1 or 2, wherein the resist stripper composition is used for resist stripping of a flat panel substrate having at least one metal wiring selected from the group consisting of aluminum, copper and molybdenum. / RTI > (I) depositing a conductive metal film on a flat panel display substrate,
(II) forming a resist film on the conductive metal film;
(III) selectively exposing the resist film;
(IV) developing the exposed resist film to form a resist pattern;
(V) etching the conductive metal film using the resist pattern as a mask; And
(VI) removing the remaining resist after the etching process using the resist stripper composition according to claim 1 or 2. A method for manufacturing a flat panel display device, which comprises a step of peeling off a resist for a flat panel substrate using the resist stripping liquid composition of claim 1 or claim 2.