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KR101954758B9 - Substrate processing device and substrate processing method - Google Patents

Substrate processing device and substrate processing method

Info

Publication number
KR101954758B9
KR101954758B9 KR1020120006951A KR20120006951A KR101954758B9 KR 101954758 B9 KR101954758 B9 KR 101954758B9 KR 1020120006951 A KR1020120006951 A KR 1020120006951A KR 20120006951 A KR20120006951 A KR 20120006951A KR 101954758 B9 KR101954758 B9 KR 101954758B9
Authority
KR
South Korea
Prior art keywords
substrate processing
processing device
processing method
substrate
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020120006951A
Other languages
Korean (ko)
Other versions
KR20130085842A (en
KR101954758B1 (en
Inventor
한정훈
황철주
Original Assignee
주성엔지니어링(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주성엔지니어링(주) filed Critical 주성엔지니어링(주)
Priority to KR1020120006951A priority Critical patent/KR101954758B1/en
Publication of KR20130085842A publication Critical patent/KR20130085842A/en
Priority to KR1020190022982A priority patent/KR102076512B1/en
Application granted granted Critical
Publication of KR101954758B1 publication Critical patent/KR101954758B1/en
Publication of KR101954758B9 publication Critical patent/KR101954758B9/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
KR1020120006951A 2012-01-20 2012-01-20 Substrate processing apparatus and substrate processing method Active KR101954758B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020120006951A KR101954758B1 (en) 2012-01-20 2012-01-20 Substrate processing apparatus and substrate processing method
KR1020190022982A KR102076512B1 (en) 2012-01-20 2019-02-27 Substrate processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120006951A KR101954758B1 (en) 2012-01-20 2012-01-20 Substrate processing apparatus and substrate processing method

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020190022982A Division KR102076512B1 (en) 2012-01-20 2019-02-27 Substrate processing method

Publications (3)

Publication Number Publication Date
KR20130085842A KR20130085842A (en) 2013-07-30
KR101954758B1 KR101954758B1 (en) 2019-03-06
KR101954758B9 true KR101954758B9 (en) 2024-12-20

Family

ID=48995924

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120006951A Active KR101954758B1 (en) 2012-01-20 2012-01-20 Substrate processing apparatus and substrate processing method

Country Status (1)

Country Link
KR (1) KR101954758B1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102115337B1 (en) * 2013-07-31 2020-05-26 주성엔지니어링(주) Substrate processing apparatus
KR102137998B1 (en) * 2013-11-05 2020-07-28 주성엔지니어링(주) Substrate processing apparatus
KR20170022459A (en) * 2015-08-20 2017-03-02 주성엔지니어링(주) Substrate processing apparatus andsubstrate processing method
KR102669903B1 (en) * 2016-08-30 2024-05-28 주성엔지니어링(주) Substrate Processing Apparatus
KR102224709B1 (en) * 2020-05-20 2021-03-08 주성엔지니어링(주) Substrate processing apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100905278B1 (en) * 2007-07-19 2009-06-29 주식회사 아이피에스 Thin film deposition apparatus, thin film deposition method and gap-fill method of semiconductor device
KR101497413B1 (en) * 2008-08-28 2015-03-02 주식회사 뉴파워 프라즈마 Capacitively coupled plasma reactor, plasma processing method using the same, and semiconductor device manufactured by the method
KR101561013B1 (en) * 2009-12-22 2015-10-14 주식회사 원익아이피에스 Substrate processing device
KR101771228B1 (en) * 2010-06-04 2017-08-25 주성엔지니어링(주) Source supplying apparatus and substrate treating apparatus having the same

Also Published As

Publication number Publication date
KR20130085842A (en) 2013-07-30
KR101954758B1 (en) 2019-03-06

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