KR101926042B1 - 파우더 코팅 방법 및 파우더 코팅 장치 - Google Patents
파우더 코팅 방법 및 파우더 코팅 장치 Download PDFInfo
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- KR101926042B1 KR101926042B1 KR1020170088867A KR20170088867A KR101926042B1 KR 101926042 B1 KR101926042 B1 KR 101926042B1 KR 1020170088867 A KR1020170088867 A KR 1020170088867A KR 20170088867 A KR20170088867 A KR 20170088867A KR 101926042 B1 KR101926042 B1 KR 101926042B1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
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Abstract
Description
도 2는 본 발명의 일 실시예에 따른 파우더 코팅 장치의 반응 챔버, 조절 밸브, 진동 제공부 및 가열부를 확대 도시한 단면도이다.
도 3은 본 발명의 일 실시예에 따른 파우더 코팅 방법을 설명하기 위한 순서도이다.
도 4 및 5는 실시예 1에 따라 아연 산화물(ZnO)이 코팅된 Bi-Sb-Te 파우더의 투과전자현미경 사진들이다.
도 6은, 도 5의 1구역 및 2구역의 EDS(Energy Dispersive Spectroscopy) 분석 결과이다.
Claims (12)
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 파우더를 수납하는 반응 챔버;
상기 반응 챔버에 소스 가스를 제공하는 소스 가스 제공부;
상기 반응 챔버에 음압을 제공하는 배기부; 및
상기 반응 챔버 외부에서 발생된 진동을, 상기 반응 챔버에 제공하는 진동 제공부를 포함하고,
상기 진동 제공부는, 상기 반응 챔버와 접촉하는 액체 매질, 상기 액체 매질을 수용하는 컨테이너, 상기 컨테이너의 외면에 부착되어 상기 액체 매질에 진동을 전달하는 초음파 생성부 및 상기 액체 매질을 통하여 상기 반응 챔버에 열을 제공하는 가열부를 포함하며,
상기 액체 매질은 실리콘 오일을 포함하는 것을 특징으로 하는 파우더 코팅 장치. - 삭제
- 삭제
- 제8항에 있어서, 상기 반응 챔버와 상기 소스 가스 제공부를 연결하는 조절 밸브를 더 포함하는 것을 특징으로 하는 파우더 코팅 장치.
- 제11항에 있어서, 복수의 반응 챔버들이 상기 조절 밸브와 연결되는 것을 특징으로 하는 파우더 코팅 장치.
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109576673A (zh) * | 2018-12-10 | 2019-04-05 | 华中科技大学 | 用于微纳米颗粒充分分散包覆的超声流化原子层沉积装置 |
KR20220074296A (ko) * | 2020-11-27 | 2022-06-03 | 한국생산기술연구원 | 다성분계 단일 합금타겟을 이용한 나노구조 코팅층 형성방법 |
KR20220073401A (ko) * | 2020-11-26 | 2022-06-03 | 한국생산기술연구원 | 진동/회전 볼 밀링 장치로 제조된 다성분계 합금분말의 aip 코팅타겟 제조방법 |
CN117364063A (zh) * | 2023-10-27 | 2024-01-09 | 无锡松煜科技有限公司 | 一种银粉及其制备方法与应用 |
DE102023119088A1 (de) | 2023-07-19 | 2025-01-23 | Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden e.V. (IFW Dresden e.V.) | Stabilisierte thermoelektrische Materialien und Verfahren zu ihrer Herstellung |
Citations (2)
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KR100203218B1 (ko) | 1996-03-23 | 1999-06-15 | 게마 플스타틱 아게 | 파우더 코팅장치 |
US20110220082A1 (en) | 2010-03-15 | 2011-09-15 | Scuderi Group, Llc | Split-cycle air-hybrid engine having a threshold minimum tank pressure |
-
2017
- 2017-07-13 KR KR1020170088867A patent/KR101926042B1/ko active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100203218B1 (ko) | 1996-03-23 | 1999-06-15 | 게마 플스타틱 아게 | 파우더 코팅장치 |
US20110220082A1 (en) | 2010-03-15 | 2011-09-15 | Scuderi Group, Llc | Split-cycle air-hybrid engine having a threshold minimum tank pressure |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109576673A (zh) * | 2018-12-10 | 2019-04-05 | 华中科技大学 | 用于微纳米颗粒充分分散包覆的超声流化原子层沉积装置 |
CN109576673B (zh) * | 2018-12-10 | 2020-02-14 | 华中科技大学 | 用于微纳米颗粒充分分散包覆的超声流化原子层沉积装置 |
KR20220073401A (ko) * | 2020-11-26 | 2022-06-03 | 한국생산기술연구원 | 진동/회전 볼 밀링 장치로 제조된 다성분계 합금분말의 aip 코팅타겟 제조방법 |
KR102465798B1 (ko) * | 2020-11-26 | 2022-11-14 | 한국생산기술연구원 | 진동/회전 볼 밀링 장치로 제조된 다성분계 합금분말의 aip 코팅타겟 제조방법 |
KR20220074296A (ko) * | 2020-11-27 | 2022-06-03 | 한국생산기술연구원 | 다성분계 단일 합금타겟을 이용한 나노구조 코팅층 형성방법 |
KR102465799B1 (ko) * | 2020-11-27 | 2022-11-14 | 한국생산기술연구원 | 다성분계 단일 합금타겟을 이용한 나노구조 코팅층 형성방법 |
DE102023119088A1 (de) | 2023-07-19 | 2025-01-23 | Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden e.V. (IFW Dresden e.V.) | Stabilisierte thermoelektrische Materialien und Verfahren zu ihrer Herstellung |
CN117364063A (zh) * | 2023-10-27 | 2024-01-09 | 无锡松煜科技有限公司 | 一种银粉及其制备方法与应用 |
CN117364063B (zh) * | 2023-10-27 | 2024-05-10 | 无锡松煜科技有限公司 | 一种银粉及其制备方法与应用 |
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