KR101925581B1 - Method for chamber cleaning - Google Patents

Abstract

The present invention relates to a chamber cleaning method, and more particularly, to a chamber cleaning method comprising: a process of introducing a cleaning process gas into a chamber; Cleaning the inside of the chamber by adjusting a gap between a substrate support installed in the chamber and a gas injector opposed to the substrate support at a first interval; Cleaning the inside of the chamber by adjusting a gap between the substrate support and the gas injector to a second gap larger than the first gap; And adjusting a gap between the substrate support and the gas injector to a third gap that is wider than the first gap and narrower than the second gap to clean the chamber interior, To a chamber cleaning method.
Further, the present invention precisely controls the cleaning process for cleaning each region in the chamber, thereby reducing the damage of various components in the chamber.

Description

Method for chamber cleaning [0002]

The present invention relates to a chamber cleaning method, and more particularly, to a chamber cleaning method capable of suppressing damage to a chamber component.

When various electronic devices such as semiconductor memories are manufactured on a substrate, various thin films are required. That is, when a semiconductor device is manufactured, various thin films are formed on a substrate, and the thin film thus formed is patterned using a photo-etching process to form a device structure.

Methods for producing thin films include physical methods and chemical methods. In recent years, chemical vapor deposition (CVD), which forms a thin film of a metal, a dielectric, or an insulator on a substrate by a chemical reaction of a gas, is mainly used. Atomic layer deposition (ALD) method is also used when a thin film is required due to the reduction of the device size.

The thin film is manufactured by introducing a gas for preparing a thin film into a process chamber in which the substrate is loaded, controlling the substrate to a temperature, and reacting the gas to form a thin film on the substrate. At this time, in the chamber in which the thin film deposition is performed, an unwanted film is formed on the inner surface due to various gases introduced into the chamber when the number of deposition processes increases. In addition, the thus-formed film adversely affects the thin film made of impurities such as particles.

Thus, the inside of the chamber where the thin film is manufactured is periodically cleaned. That is, the manufacturing of the thin film is terminated, and a cleaning gas is injected into the chamber at a desired time to clean the chamber. A conventional method of cleaning the interior of the chamber is as follows. First, the substrate support provided in the chamber is moved upward to expose only the upper region inside the chamber, and the cleaning gas is injected into the chamber to clean only the upper region in the chamber. Subsequently, the substrate support is moved downward to expose to the lower region of the chamber, and a cleaning gas is injected into the chamber to clean up to the lower region in the chamber. The upper area cleaning and the lower area cleaning are repeated, and the upper area cleaning time is longer than the lower area cleaning time. That is, in the total cleaning time, the upper area cleaning time is 75% and the lower cleaning time is 25%.

However, such a chamber cleaning method causes an undesired cleaning to occur on various components provided in the chamber during cleaning, thereby causing a problem of damaging the components. In particular, during the course of cleaning, the temperature of the part, for example, the gas injector, is raised and such an elevated temperature causes the undesired cleaning to proceed more rapidly, thereby increasing the damage of the part. If such parts are damaged, they will affect subsequent thin film manufacturing and cause a problem of reducing the period of replacement of these parts. On the other hand, when the cleaning conditions are adjusted to prevent damage to the chamber components, particularly when the amount of the cleaning gas is reduced, the increase in the temperature of the gas injection device can be suppressed to some extent. However, have. The generation of such particles affects the subsequent production of the thin film, which makes it impossible to produce a high quality thin film. On the other hand, various problems in such cleaning occur more seriously when the temperature in the chamber is raised, for example, when a thin film is produced at a high temperature and then the chamber is cleaned at the same temperature.

KR 10-0530246 B KR 2003-4681 A

The present invention provides a chamber cleaning method capable of suppressing damage to a chamber part.

The present invention provides a stable and reliable chamber cleaning method.

A chamber cleaning method according to an embodiment of the present invention is a method of cleaning the inside of a chamber, comprising: a process of introducing a cleaning process gas into the chamber; Cleaning the inside of the chamber by adjusting a gap between a substrate support installed in the chamber and a gas injector opposed to the substrate support at a first interval; Cleaning the inside of the chamber by adjusting a gap between the substrate support and the gas injector to a second gap larger than the first gap; And adjusting a gap between the substrate support and the gas injector to a third gap that is wider than the first gap and narrower than the second gap to clean the chamber interior, .

The process of cleaning at the first interval may be performed twice or more.

The cleaning process of the first interval, the cleaning process of the second interval, and the cleaning process of the third interval may be continuously performed, but the same cleaning process may not be continuous.

The cleaning process of the first interval may be performed two or more times in succession.

Wherein the first gap is in the range of 15 to 40, the second gap is in the range of 90 to 100, and the third gap is in the range of 40 to 90, when the maximum gap between the substrate support and the gas injector is 100 have.

And the total cleaning time is 100%, the cleaning time of the first interval is 40 to 70%, and the sum of the cleaning time of the second interval and the cleaning time of the third interval is the first interval The cleaning time may be excluded.

The second gap cleaning time and the first gap cleaning time may be the same time.

The cleaning process gas may include an active species generated by the plasma generated outside the chamber.

The temperature of the substrate support during the cleaning of the chamber may range from 500 to 600 degrees Celsius.

The chamber cleaning method according to the embodiment of the present invention precisely controls the cleaning process for cleaning each region in the chamber, thereby reducing the damage of various components in the chamber. Particularly, since the time for cleaning the upper region inside the chamber is reduced and the temperature rise of the components in the chamber is suppressed, it is possible to efficiently clean the entire interior of the chamber while reducing damage to various components. In addition, particle generation in the chamber during cleaning can be suppressed.

It is possible to secure the stability and reliability of various components and to prolong the period of replacement of these components.

Since the generation of particles is suppressed and the stability / reliability of the components in the chamber is ensured, stability and reliability of the thin film manufacturing process performed in the chamber can be ensured, and the quality of the thin film produced can be improved.

Further, since the stability / reliability of the chamber components is ensured and the replacement cycle is extended, the cost of maintaining the thin film manufacturing apparatus can be reduced, and the productivity of the entire process can be remarkably improved.

1 is a schematic sectional view showing an example of a substrate processing apparatus to which the chamber cleaning method of the present invention is applied.
FIG. 2 is a flowchart sequentially illustrating a chamber cleaning method according to an embodiment of the present invention; FIG.
3 to 5 are schematic cross-sectional views illustrating an operation process of a chamber cleaning method according to an embodiment of the present invention.
FIG. 6 is a simplified process chart depicting a chamber cleaning method according to variations of the present invention. FIG.
7 is a graph showing the results of measuring the temperature of the showerhead according to the cleaning of Comparative Examples 1 to 3;
8 is a graph showing the results of measuring the temperature of the showerhead according to the cleaning of the experimental example.
9 is a graph showing the results of measurement of the number of particles generated during cleaning in Comparative Examples and Experimental Examples.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the present invention are shown. However, the present invention is not limited to the embodiments described below. It is provided to let you know.

First, before explaining the chamber cleaning method of the embodiments of the present invention, the structure of the apparatus in which such a cleaning method is performed will be described as an example. 1 is a schematic sectional view showing an example of a substrate processing apparatus to which the chamber cleaning method of the present invention is applied.

The substrate processing apparatus is an apparatus in which various processes such as a device for manufacturing a thin film on a substrate and an apparatus for etching a substrate are performed. Here, an apparatus for producing a thin film is exemplarily described. The thin film manufacturing apparatus includes a chamber 10, a substrate support 30, and a gas injector 20. It may also include a gas source for supplying various gases to the gas injector 20 and means for applying power to the gas injector.

The chamber 10 has a main body 12 with an open top and a top lead 11 which is openably and closably provided on the top of the main body 12. [ When the top lead 11 is coupled to the upper portion of the main body 12 to close the main body 12, a space for processing the substrate such as a deposition process is formed in the chamber 10, for example. Since the space portion is generally formed in a vacuum atmosphere, an exhaust port for discharging gas existing in the space portion is formed at a predetermined position of the chamber 10, and the exhaust port is connected to an exhaust pipe (not shown) connected to the vacuum pump 52 51). A through hole is formed in the bottom surface of the main body 12 to insert a drive shaft connected to the substrate support 30, which will be described later. A gate valve (not shown) is formed on the side wall of the main body 12 to carry the substrate into or out of the chamber 10.

The substrate support 30 is a structure for supporting a substrate, and can support a single substrate or a plurality of substrates. The substrate support 30 is horizontally disposed inside the chamber 10 in a disc shape and the drive shaft 40 is vertically connected to the bottom surface of the substrate support 30. The drive shaft 40 is connected to driving means (not shown) such as an external motor through the through holes to lift and rotate the substrate support 30. In addition, a heater (not shown) is provided on the lower side or inside of the substrate support 30 to heat the substrate to a predetermined process temperature. The substrate support 30 occupies most of the horizontal surface in the chamber except for a predetermined gap between the substrate support 30 and the wall of the chamber 10 so that the spatial region inside the chamber widens or narrows as the substrate support 30 moves. This will be described later in detail.

The gas injector 20 is spaced apart from the upper portion of the substrate support 30 and injects various process gases such as a raw material, a carrier gas, a reactive gas, and a cleaning gas, which have been vaporized toward the substrate support 30. The gas injector 20 mixes different kinds of gas introduced from the outside as a showerhead type, and injects these gases toward the substrate support 30. Of course, various types of injectors such as an injector and a nozzle may be used as the gas injector in addition to the shower head type. In the case of a shower dead-type gas injector, it extends horizontally in the chamber and occupies most of the horizontal plane on which the gas injector is located, except for the gap between the gas injector and the wall of the chamber 10. The gas injector 20 is connected to a gas supply source and a gas supply line for supplying various process gases. For example, gas supply sources and gas supply lines of various gases used in the manufacture of thin films are connected. Further, gas supply sources and gas supply lines 71, 72 of various process gases used for cleaning the chamber are connected.

The thin film manufacturing apparatus is provided with a remote plasma generating source 60. That is, a plasma generating source 60 may be provided to generate a plasma from the outside of the chamber to excite a gas used for cleaning to activate the activated species. For example, a plasma generating source 60 may be provided between a pipe 72 connected to a gas supply source and a pipe 71 supplying gas through a gas injector. In addition, the thin film production apparatus may be provided with a plasma generation unit for forming a plasma inside the chamber. That is, a plasma generating unit may be provided in order to generate plasma in the chamber to excite various process gases into an active species state. For example, by connecting a power supply means to the gas injector 20, from which RF (Radio Frequency) power is applied to the gas injector 20 above the substrate of the chamber 10 and the substrate support is grounded, And may be driven by a capacitively coupled plasma (CCP) method in which a plasma is excited using a RF to a reaction space which is a deposition space. In addition to the plasma generation, the plasma generation unit may include a coil to generate a plasma in the chamber 10 in an induced coupling manner.

A thin film is formed on a substrate by performing a deposition process in the thin film production apparatus thus configured. That is, various process gases are supplied to the upper portion of the substrate S placed on the substrate support 30 through the gas injector 20, and a plasma is formed in the chamber 20. The active paper is supplied on the substrate to form a thin film, and residual gas and by-products are discharged to the outside through the exhaust pipe 51. After the deposition process is repeated several times, the inside of the chamber is cleaned.

Meanwhile, in the thin film manufacturing apparatus, the space between the substrate supporter 30 and the gas injector 20 may be adjusted to separate the chamber interior space. When the substrate supporter 30 and the gas injector 20 are brought close to each other, the gap between them can be narrowed to the first gap d1. For example, if the substrate support 30 is raised in the upward direction and positioned on a horizontal plane a1 proximate the gas injector, the distance between the substrate support 30 and the gas injector 20 will be the first distance d1. At this time, the space (A1 region, hereinafter referred to as "upper region") inside the chamber 10 is formed as a space to be exposed. When the substrate support 30 and the gas injector 20 are separated from each other, the gap between them can be adjusted to be wide, that is, the second gap d2 wider than the first gap d1. For example, if the substrate support 30 is lowered in the downward direction and placed on a horizontal plane a2 close to the bottom of the chamber, the gap between the substrate support 30 and the gas injector 20 will be the second wide distance d2. At this time, the space inside the chamber 10 is formed as a space exposed to a space (A1 + A3 + A2, hereinafter referred to as "lower region") from the upper portion to the lower portion. Further, if the substrate supporter 30 and the gas injector 20 are spaced apart from each other, the interval between them can be adjusted to an intermediate interval. That is, the gap between the substrate support 30 and the gas injector 20 can be adjusted to a third gap d3 which is wider than the first gap d1 and narrower than the second gap d2. For example, if the substrate support 30 is lowered in the downward direction and positioned on the horizontal plane a3, which is the middle of the chamber, the gap between the substrate support 30 and the gas injector 20 is the third gap d3, . At this time, the space inside the chamber 10 is formed as a space exposed to a space (A1 + A3 region, hereinafter referred to as "intermediate region") from the upper portion to the intermediate portion. That is, at this time, the middle area is exposed, and the lower area (area A2) is not exposed.

The chamber cleaning method of the embodiment of the present invention will be described below. FIG. 2 is a flowchart sequentially illustrating a chamber cleaning method according to an embodiment of the present invention, and FIGS. 3 to 5 are schematic cross-sectional views illustrating an operation process of a chamber cleaning method according to an embodiment of the present invention.

The chamber cleaning method of the present invention includes the steps of introducing the cleaning processing gas into the chamber, adjusting the gap between the substrate support installed in the chamber to support the substrate and the gas ejector installed opposite to the substrate support to a first interval Cleaning the inside of the chamber by adjusting the gap between the substrate support and the gas injector to a second gap larger than the first gap and cleaning the chamber interior, And a third interval narrower than the second interval to clean the inside of the chamber, and each step is performed at least once.

That is, the chamber cleaning method is a method of cleaning the interior of the chamber by dividing the chamber into a plurality of regions in the vertical direction, including a process of introducing the cleaning process gas into the chamber, a process of adjusting the gap between the substrate support and the gas ejector, Exposing and cleaning the upper region of the chamber, adjusting the gap between the substrate support and the gas injector to a second gap to expose and clean the lower region within the chamber, and removing the gap between the substrate support and the gas injector And exposing and cleaning the intermediate region inside the chamber by adjusting the distance between the chambers.

First, the process gas is introduced into the chamber (S11). The process gas includes a scrubbing gas for scrubbing the chamber 10. For example, nitrogen trifluoride (NF3). This cleaning gas reacts with the coating formed on the inner wall of the chamber to remove the coating. The cleaning gas may be used alone, or it may be used with a diluting gas that dilutes it or with a carrier gas that carries it. Further, if the cleaning gas is formed into an active species by using plasma, the cleaning efficiency can be increased. The active species cleaning gas may be formed using a remote plasma generating source 60. For example, argon gas, a dilution gas such as helium or nitrogen is injected into a remote plasma generating source 60 connected to the chamber 10 and installed outside the chamber 10, a power is applied to generate plasma, and a remote plasma generating source 60 ) To generate an active species. As the cleaning gas, a gas having a high reactivity such as nitrogen trifluoride (NF3) is used. The thus formed cleaning gas active species is introduced into the chamber 10 through the connection pipe.

The gap between the substrate supporter 30 and the gas injector 20 provided in the chamber 10 is adjusted to a first distance d1 and the upper region inside the chamber is exposed and cleaned (S12). The first spacing d1 is the distance between the substrate support 30 and the gas injector 20 adjacent to the top of the chamber 10 so that the upper region of the chamber 10 is mainly cleaned ). In other words. The gas injector 20 and the periphery thereof are mainly cleaned. At this time, since the narrow area is cleaned, the temperature of the components in the chamber, particularly the gas injector 20, may rise. The process of cleaning by exposing the upper region is referred to as top cleaning (T).

The gap between the substrate supporter 30 and the gas injector 20 is adjusted to a second gap d2 that is wider than the first gap d1 and the lower region inside the chamber is exposed and cleaned at step S13. The second gap d2 is an interval between the substrate supporter 30 and the gas injector 20 so as to be spaced apart and expose to the lower region of the chamber 10 so that the inside of the chamber 10 is entirely cleaned 4). The process of exposing the lower region to the lower region is referred to as lower cleaning (B).

The distance between the substrate supporter 30 and the gas injector 20 is adjusted to a third gap d3 which is wider than the first gap d1 and narrower than the second gap d2 and is located lower than the upper region, The intermediate region inside the chamber located on the upper side is exposed and cleaned (S14). The third space d3 is an interval which is intermediate between the substrate supporter 30 and the gas injector 20 and exposes to the middle area inside the chamber 10, A3 space is cleaned (see Fig. 5). The process of cleaning by exposing the intermediate region is referred to as intermediate cleaning (M).

The upper cleaning (T), the lower cleaning (B), and the intermediate cleaning (M) may be performed in the order described above, and the order of each process may be changed. At this time, the overall cleaning performs each cleaning process at least once. Further, the upper cleaning T may be performed twice or more. For example, the upper cleaning (T), the lower cleaning (B), and the intermediate cleaning (M) may be performed and the upper cleaning T may be performed again (S15). In addition, the upper cleaning T, the lower cleaning B, and the intermediate cleaning M may not be performed successively, and the upper cleaning T may be performed twice in succession. That is, the upper cleaning (T), the lower cleaning (B), and the intermediate cleaning (M) may be performed in various ways. As shown in the table of FIG. 6, the order and the number of times of each process can be changed variously by marking each cleaning process as T, B, and M. Of course, such a combination of processes and processes may be repeatedly performed.

On the other hand, when the maximum distance between the substrate support 30 and the gas injector 20 is 100, the first distance d1 ranges from 15 to 40, the second interval d2 ranges from 90 to 100, The third spacing d3 may be from 40 to 90. The first gap is an interval in which the gas injector and its periphery are sufficiently cleaned, and the second gap is adjusted such that the entire region in the chamber is cleaned at an interval that is as far as possible between the gas injector 20 and the substrate support 30. Further, the third gap is adjusted at intervals giving less influence to the temperature rise of the gas injector while cleaning the middle portion of the chamber.

When the total chamber cleaning time is 100%, the cleaning time of the first interval is 40 to 70%, the sum of the cleaning time of the second interval and the cleaning time of the third interval is the cleaning time of the first interval It may be time except time. That is, the time of the upper cleaning (T) is 40 to 70%, and the sum of the time of the lower cleaning (B) and the time of the intermediate cleaning (M) may be the time excluding the upper cleaning (T) time at the whole cleaning time. Wherein the second interval cleaning time and the first interval cleaning time may be the same time. This cleaning time control scheme can reduce the time for the upper cleaning (T) compared to the conventional chamber cleaning method and thereby prevent the temperature of the components in the chamber 10, particularly the gas injector 20, from rising. That is, if the cleaning time T of the first interval is set to be smaller than 40%, the gas injector 20 and the periphery of the chamber are not sufficiently cleaned. If the cleaning time is longer than 70%, the temperature of the gas injector 20 is raised do.

When the interior of the chamber 10 is sufficiently cleaned, the inflow of the processing gas is blocked (S16), and the chamber cleaning is completed.

Hereinafter, concrete experimental examples and evaluation results thereof will be described. The inside of the chamber was cleaned under the conditions of the comparative example and the experimental example of the present invention, and the temperature change of the gas injector, that is, the shower head and the generation of particles were evaluated at this time. The same chambers were used for the experimental example and the comparative example. In each of the examples, chamber cleaning was performed after several thin film fabrication proceeded at a high temperature (500 to 600 degrees) in the substrate processing apparatus.

Comparative Examples 1 to 3 illustrate the process of raising the substrate support 30 in the chamber toward the gas injector 20 to clean only the upper region of the chamber (i.e., top cleaning T) The process of cleaning the lower region of the chamber with the maximum distance from the injector 20 (i.e., the lower cleaning B) was repeatedly performed. The total cleaning time was 150 seconds and the procedure was carried out in the order and time of top cleaning (T) 80 seconds / bottom cleaning (B) 40 seconds / top cleaning (T) 30 seconds / bottom cleaning (B) 10 seconds. In Comparative Examples 1 to 3, all the conditions except for the cleaning gas flow rate were the same. That is, after the thin film manufacturing process is completed, a plasma is generated by flowing 5000 to 10000 sccm of argon gas and 3000 to 8000 sccm of helium gas to a remote plasma source, and nitrogen trifluoride (NF3) gas is introduced into the remote plasma source at 3500 to 7000 sccm To form an active species. Subsequently, an upper cleaning (T) of 80 seconds / a lower cleaning (B) of 40 seconds / an upper cleaning (T) of 30 seconds / a lower cleaning (B) of 10 seconds was performed while introducing active species of nitrogen trifluoride into the chamber. During chamber cleaning, the temperature of the substrate support 30 was maintained at 500-600 degrees Celsius and the pressure inside the chamber was maintained at 2-7 Torr. In Comparative Example 1, nitrogen trifluoride was introduced at 7000 sccm. In Comparative Example 2, nitrogen trifluoride was introduced at 5000 sccm. In Comparative Example 3, nitrogen trifluoride was introduced at 3500 sccm.

On the other hand, the experimental example was carried out in combination with the upper cleaning (T), the lower cleaning (B) and the intermediate cleaning (M) as described above in the chamber. That is, the total cleaning time was 150 seconds, and the procedure was conducted in the order and time of the upper cleaning (T) 50 sec / lower cleaning (B) 40 sec / intermediate cleaning (M) 40 sec / upper cleaning (T) 20 sec. Specifically, after the thin film manufacturing process is completed, a plasma is generated by flowing 5000 to 10000 sccm of argon gas and 3000 to 8000 sccm of helium gas to a remote plasma source, and nitrogen trifluoride (NF3) gas is introduced into the remote plasma source at 5000 sccm To form an active species. Subsequently, the active species, nitrogen trifluoride, was introduced into the chamber for an upper cleaning (T) of 50 sec / lower cleaning (B) of 40 sec / intermediate cleaning (M) of 40 sec / upper cleaning (T) of 20 sec. During chamber cleaning, the temperature of the substrate support 30 was maintained at 500-600 degrees Celsius and the pressure inside the chamber was maintained at 2-7 Torr.

FIG. 7 and FIG. 8 show the results of measuring the temperature of the shower head while the cleaning of the above Experimental Example and Comparative Examples 1 to 3 is performed. FIG. 9 shows the number of particles generated during the cleaning. As shown in Figs. 7 and 8, when the chamber is cleaned under the conditions of Comparative Examples 1 and 2, the temperature of the shower head excessively rises during cleaning, which causes damage of the parts. On the other hand, as in Comparative Example 3, it is shown that the temperature rise of the showerhead can be suppressed by reducing the amount of the cleaning gas used for cleaning. However, as shown in Fig. 9, in the comparative example 3, the temperature rise of the showerhead is suppressed, but it can be seen that particles are generated very much during cleaning. On the other hand, in the case of the experimental example, as shown in FIG. 8, the temperature rise of the showerhead is suppressed during the entire time of cleaning, and the number of particles generated during cleaning can be remarkably suppressed as shown in FIG. 9 . From this, according to the cleaning method of the experimental example, it is possible to suppress the damage of the parts and ensure the stability and reliability of various parts.

Although the present invention has been described in connection with certain exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Therefore, the scope of the present invention should not be limited by the described embodiments, but should be defined by the appended claims and equivalents thereof.

10: chamber 20: gas injector
30: substrate support 52: vacuum pump
60: Plasma source

Claims (9)

A method of cleaning an interior of a chamber,
Introducing a process gas for cleaning into the chamber;
Cleaning the inside of the chamber by adjusting a gap between a substrate support installed in the chamber and a gas injector opposed to the substrate support at a first interval;
Cleaning the inside of the chamber by adjusting a gap between the substrate support and the gas injector to a second gap larger than the first gap; And
And adjusting the gap between the substrate support and the gas injector to a third gap larger than the first gap and narrower than the second gap to clean the chamber interior,
Each of the steps is performed at least once,
The process of introducing the cleaning process gas may include the step of injecting a cleaning process gas between the gas ejector and the substrate support using the gas ejector,
Wherein the process of cleaning the inside of the chamber includes moving the substrate support vertically so as to adjust an interval between the support and the gas injector.
The method according to claim 1,
Wherein the cleaning is performed at least twice at the first interval. The method of claim 2,
Wherein the cleaning process of the first interval, the cleaning process of the second interval, and the cleaning process of the third interval are continuously performed, but the same cleaning process is not continued. The method of claim 2,
Wherein the cleaning process of the first interval is performed two or more times in succession. The method according to any one of claims 1 to 4,
Wherein the first gap is in the range of 15 to 40, the second gap is in the range of 90 to 100, and the third gap is in the range of 40 to 90 when the maximum gap between the substrate support and the gas injector is 100, Cleaning method. The method according to any one of claims 2 to 4,
And the total cleaning time is 100%, the cleaning time of the first interval is 40 to 70%, and the sum of the cleaning time of the second interval and the cleaning time of the third interval is the first interval Wherein the cleaning time is a time other than the cleaning time of the chamber. The method of claim 6,
Wherein the second interval cleaning time and the first interval cleaning time are the same time. The method according to claim 1,
Wherein the cleaning process gas comprises an active species generated by a plasma generated outside the chamber. The method according to any one of claims 1 to 4,
Wherein the temperature of the substrate support is in the range of 500 to 600 degrees Celsius while the chamber is being cleaned.

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