KR101895099B1 - Cleaning method and substrate processing apparatus - Google Patents

Abstract

A cleaning method capable of efficiently removing a reaction product adhered to a processing vessel of a gas flow path, a gas supply hole, and a substrate processing apparatus.
A plasma processing apparatus comprising: a processing container; a holding section for holding the substrate, the electrode plate being provided in the processing container and facing the holding section; a gas supply source for supplying the process gas; A plurality of gas flow paths partitioned by a first region corresponding to a position in the first plane and a second region corresponding to a position in the second plane where the position in the plane of the substrate is different from the position in the first plane are formed A gas supply part for discharging the processing gas from the gas supply source to the space between the holding part and the electrode plate through the plurality of gas flow paths and a gas supply part for supplying high frequency power to at least one of the holding part and the electrode plate And a high-frequency power source for converting the processing gas in the space into a plasma, the cleaning method comprising the steps of: The first flow rate of the process gas is set to be smaller than the second flow rate of the process gas supplied to the second region and the first gas corresponding to the first region of the plurality of gas flow channels And a third flow rate of the process gas supplied to the first region is set to be larger than a fourth flow rate of the process gas supplied to the second region, And a second cleaning step of cleaning the second gas flow path corresponding to the second region out of the plurality of gas flow paths.

Description

CLEANING METHOD AND SUBSTRATE PROCESSING APPARATUS [0002]

The present invention relates to a cleaning method and a substrate processing apparatus.

As a substrate processing apparatus, a plasma processing apparatus for applying a predetermined plasma processing such as etching to a substrate such as a wafer for a semiconductor device by using plasma is well known.

The plasma processing apparatus includes, for example, a processing vessel in which a plasma is generated, an upper electrode and a lower electrode provided opposite to each other, a gas supply unit for supplying a processing gas to a space between the upper electrode and the lower electrode through a gas supply hole Respectively. Then, high frequency electric power is applied to at least one of the upper electrode and the lower electrode provided opposite to each other, the plasma is generated by exciting the processing gas by the electric field energy, and the substrate is subjected to plasma processing by the generated discharge plasma.

In the plasma processing apparatus, when a deposition reaction gas is used as the process gas, the reaction product generated from the process gas is attached to the inner surface (inner wall) of the process container or the gas supply hole. Attachment of the reaction product causes defects due to adhesion of particles to the semiconductor device to be produced and failure of the plasma processing apparatus. Therefore, as exemplified in Patent Document 1, a cleaning process is performed to remove reaction products adhered to the processing vessel every predetermined period.

(Prior art document)

(Patent Literature)

(Patent Document 1) Japanese Patent Laid-Open No. 2007-214512

However, the method of Patent Document 1 has a problem that the cleaning effect of the reaction product adhered to the gas flow path and the gas supply hole of the gas supply portion for supplying the process gas is low.

The present invention provides a cleaning method capable of efficiently removing a reaction product adhered to a processing vessel of a gas flow path, a gas supply hole, and a substrate processing apparatus.

According to an aspect of the present invention, there is provided a plasma processing apparatus comprising: a processing container; a holding section for holding the substrate; a gas supply source provided in the processing container and opposed to the holding section; A plurality of gas flow paths partitioned by a first region corresponding to a position in the first plane and a second region corresponding to a position in the second plane where the position in the plane of the substrate is different from the position in the first plane are formed A gas supply part for discharging the processing gas from the gas supply source to the space between the holding part and the electrode plate through the plurality of gas flow paths and a gas supply part for supplying high frequency power to at least one of the holding part and the electrode plate And a high-frequency power source for converting the processing gas in the space into a plasma, the cleaning method comprising the steps of: The first flow rate of the process gas is set to be smaller than the second flow rate of the process gas supplied to the second region and the plasma of the process gas is applied to the first region of the plurality of gas flow channels corresponding to the first region And a third flow rate of the process gas supplied to the first region is set to be larger than a fourth flow rate of the process gas supplied to the second region, And a second cleaning step of cleaning the second gas flow path corresponding to the second area out of the plurality of gas flow paths by the second cleaning step.

It is possible to provide a cleaning method capable of efficiently removing reaction products adhered to a processing vessel of a gas flow path, a gas supply hole, and a substrate processing apparatus.

1 is a schematic configuration diagram of an example of a substrate processing apparatus according to the present embodiment.
2 is a schematic enlarged view of the vicinity of a gas flow path of the substrate processing apparatus of FIG.
3 is a flowchart of an example of a cleaning method according to the present embodiment.
4 is a schematic diagram for explaining an example of the effect of the cleaning method according to the present embodiment.
5 is a schematic view for explaining an example of end point detection of the cleaning method according to the present embodiment.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Note that, in this specification and the drawings, substantially the same constituent elements are denoted by the same reference numerals, and redundant description is omitted.

(Substrate processing apparatus)

First, the configuration of a substrate processing apparatus capable of carrying out the cleaning method according to the present embodiment will be described. The substrate processing apparatus capable of carrying out the cleaning method according to the present embodiment is not particularly limited and may be a plasma processing apparatus such as a plasma processing apparatus such as a plasma processing apparatus such as a RIE (Reactive Ion Etching) And a plasma processing apparatus of a parallel plate type (also referred to as a capacitively coupled type) capable of performing processing. Although the semiconductor wafer W is described as an object to be processed in this specification, various substrates used for an LCD (Liquid Crystal Display), an FPD (Flat Panel Display), a photomask, a CD substrate, a printed substrate, or the like may be used.

Fig. 1 shows a schematic configuration diagram of an example of a substrate processing apparatus according to the present embodiment.

The substrate processing apparatus 1 has a processing vessel 10 made of a conductive material such as aluminum and a gas supply source 15 for supplying a processing gas into the processing vessel 10. The process gas is appropriately selected depending on the kind of the process, the kind of the film to be treated, and the like.

The processing vessel 10 is electrically grounded and includes a lower electrode 20 (corresponding to the holding portion) and an upper electrode 25 arranged parallel to the lower electrode 20 ).

The lower electrode 20 also functions as a mount for mounting a semiconductor wafer W (hereinafter referred to as a wafer W) on which a monolayer film, a lamination film, or the like is formed.

In at least one of the lower electrode 20 and the upper electrode 25, the lower electrode 20 in Fig. 1 is connected to a power supply device 30 for supplying a two-frequency superposed electric power. The power supply device 30 includes a first high frequency power supply 32 for supplying a first high frequency power of a first frequency (a high frequency power for generating plasma), a second high frequency power supply of a second frequency lower than the first frequency And a second high frequency power source 34 for supplying a high frequency power for generating a voltage). The first high frequency power source 32 is electrically connected to the lower electrode 20 via the first matching unit 33. The second high frequency power source 34 is electrically connected to the lower electrode 20 via the second matching device 35. [

The first matching unit 33 and the second matching unit 35 are for matching the load impedance to the internal (or output) impedance of the first high frequency power source 32 and the second high frequency power source 34, respectively. When the plasma is generated in the processing vessel 1, the internal impedance and the load impedance of the first RF power supply 32 and the second RF power supply 34 function so as to coincide with each other.

The upper electrode 25 is provided at the ceiling portion of the processing vessel 10 through a shield ring 40 covering the periphery thereof. The upper electrode 25 may be electrically grounded as shown in Fig. Alternatively, the upper electrode 25 may be connected to a variable DC power source (not shown) to apply a predetermined direct current (DC) voltage.

The upper electrode 25 is provided with a diffusion chamber 50 for diffusing gas introduced from a gas supply source 15 to be described later. In the diffusion chamber 50, as shown exemplarily in Fig. 1, at least one annular partition wall member 26 made of an O-ring is provided. The at least one annular partition wall member 26 is disposed at a different position in the radial direction of the upper electrode 25, that is, the in-plane position of the wafer W to be processed. 1, the annular partition wall member 26 includes a first annular partition wall member 26a, a second annular partition wall member 26b, a second annular partition wall member 26b, Three-ring-shaped partition member 26c are disposed. Thereby, the diffusion chamber 50 is divided into the first diffusion chamber 50a, the second diffusion chamber 50b, the third diffusion chamber 50c, and the fourth diffusion chamber 50d from the center side. In this case, for example, the first diffusion chamber 50a corresponds to the center portion of the processed wafer W, the second diffusion chamber 50b corresponds to the middle portion, the third diffusion chamber 50c corresponds to the edge portion, The fourth diffusion chamber 50d is formed in correspondence with the edge of the barrier.

The number of the annular partition wall members 26 is not particularly limited as long as the number of the annular partition wall members 26 is one or more. For example, by arranging the N annular partition wall members 26, N + 1 divided diffusion chambers 50 can be provided have.

The diffusion chambers 50a to 50d are provided with gas introducing ports 45a to 45d and supply various gases from the gas supply source 15 through the gas introducing ports 45a to 45d to the diffusion chambers 50a to 50d ). ≪ / RTI >

Fig. 2 is an enlarged schematic view of the vicinity of the gas flow path 55 of the substrate processing apparatus 1 of Fig. 2, the upper electrode 25 is provided with a plurality of gas flow paths 55a for supplying the processing gas from the diffusion chamber 50 into the processing vessel 10. In addition,

Although not shown in Fig. 1, the surface of the upper electrode 25 on the side of the lower electrode 20 is protected by plasma or scratches on the surface of the upper electrode 25, and quartz A cover member 27 made of an insulating ceramics of the present invention is disposed. The gas passage 55b is formed in the cover member 27 so as to correspond to the gas passage 55a of the upper electrode 25 described above. The gas passage 55a of the upper electrode 25 has a configuration in which the diameter of the gas passage 55a closer to the cover member 27 is reduced. This makes it possible to reduce the mixing of the leakage gas from the outside.

The process gas from the gas supply source 15 is first distributed and supplied to the diffusion chambers 50a to 50d through the gas introduction ports 45a to 45d. The process gas supplied to the diffusion chamber 50 is supplied into the processing vessel 10 through the gas flow channels 55a and 55b and the gas supply holes 28 formed in the cover member 27. [ From the above, the upper electrode 25 having such a configuration also functions as a gas showerhead for supplying the process gas.

An exhaust port 60 is formed in the bottom surface of the processing vessel 10 and exhausted by the exhaust apparatus 65 connected to the exhaust port 60 to maintain the inside of the processing vessel 10 at a predetermined degree of vacuum .

On the side wall of the processing vessel 10, a gate valve G is provided. The gate valve G opens and closes the entrance and exit when the wafer W is carried in and out from the processing vessel 10.

Magnets (not shown) extending in an annular or concentric shape may be arranged in the upper and lower two stages around the processing vessel 10, for example. In the case of disposing the magnets, a RF field is formed in the vertical direction by the high-frequency power in the space between the lower electrode 20 and the upper electrode 25, and a magnetic field is formed in the horizontal direction. High-density plasma can be formed in the vicinity of the surface of the lower electrode 25 by the magnetron discharge using these orthogonal electromagnetic fields.

The substrate processing apparatus 1 is provided with a control section 100 for controlling the operation of the entire apparatus. The control unit 100 has a central processing unit (CPU) 105 and a recording area of a ROM (Read Only Memory) 110 and a RAM (Random Access Memory)

The CPU 105 executes various kinds of plasma processing (cleaning processing etching processing, ashing processing, and the like) in accordance with various recipes stored in these storage areas. The recipe includes process information such as process time, pressure (exhaust gas), high frequency power or voltage, various process gas flow rates, chamber temperature (e.g., upper electrode temperature, chamber side wall temperature, ESC temperature) . The recipe representing these programs and processing conditions may be stored in a hard disk or a semiconductor memory, or may be stored in a storage medium readable by a portable computer such as a CD-ROM or a DVD, It may be configured to be set.

(Cleaning method)

Next, a cleaning method according to the present embodiment using the above-described substrate processing apparatus 1 will be described. In the cleaning process based on the cleaning method of the present embodiment, the pressure in the processing container 10, the output of the high-frequency power by the power supply device 30, the cleaning time, and the like can be appropriately set by those skilled in the art .

Fig. 3 shows a flowchart of an example of the cleaning method according to the present embodiment.

The cleaning method of the present embodiment is carried out after plasma treatment such as RIE treatment is performed on the wafer W by using the substrate processing apparatus 1 described above. The reaction product generated from the process gas is adhered to the surface of the upper electrode 25, the side wall of the processing vessel 10, the inner surface of the gas supply hole 28, and the like when the wafer W is subjected to plasma processing. In order to remove this reaction product, the following cleaning method is carried out. A method for removing the reaction product adhered to the surface of the upper electrode 25 or the side wall of the processing vessel 10 or the like is mainly known, but will be described in the following description.

First, in S200, the wafer W subjected to the plasma treatment is taken out from the processing vessel 10 in the substrate processing apparatus 1 described above. The cleaning method according to the present embodiment may be carried out while the wafer W is accommodated in the processing container 10. [

Next, in S210, oxygen gas is introduced into the processing vessel 10, and high-frequency electric power for plasma generation is applied to the lower electrode 20 to generate a plasma of oxygen gas. Thereby, oxygen radicals (and oxygen ions) are generated from the oxygen gas. The oxygen radicals decompose and remove the reaction product by reacting with the reaction product attached to the inner wall of the processing vessel 10 (and the surface of the upper electrode 25). The decomposed reaction products, oxygen radicals, and the like are discharged from the exhaust port 60 by the exhaust apparatus 65 of the substrate processing apparatus.

However, in the process of S210, it is difficult to remove the reaction product adhered to the inner surface of the gas supply hole 28 or the like. 4 is a schematic view for explaining an example of the effect of the cleaning method according to the present embodiment. More specifically, Fig. 4 is a schematic view of the vicinity of the gas supply hole 28 of the substrate processing apparatus 1. Fig. The arrow in the downward direction in Fig. 4 schematically shows the moving direction of the cleaning gas, and the arrow in the upper direction schematically shows the moving direction of the radical generated by the plasma of the cleaning gas. The patternless portion in Fig. 4 schematically shows the distribution region of the radicals.

4A, in the conventional cleaning method, oxygen gas, which is a cleaning gas, is supplied from the diffusion chamber 50 to the processing vessel 10 through the gas channels 55a and 55b at a high flow rate. Therefore, it is difficult for the oxygen radicals generated in the processing vessel 10 to enter the gas flow channels 55b, 55a from the processing vessel 10. Therefore, in the cleaning process S210 described above, at least some of the reaction products R adhered on the gas flow path 55 remain without being removed, even when a long time process is performed.

Therefore, in the present embodiment, with respect to the diffusion chamber 50 partitioned by the annular partition wall member 26 into at least two zones, the flow rate of the supplied cleaning gas is large and the flow rate of the supplied cleaning gas A cleaning gas is supplied so that this small area is generated. In other words, with respect to the diffusion chamber 50 partitioned by the annular partition wall member 26 into at least two zones, the cleaning gas is supplied to the first region corresponding to the in-plane position of the wafer W at the first flow rate, The cleaning gas is supplied to the second region corresponding to the second in-plane position where the in-plane position of the wafer W differs from the in-plane position of the wafer W by a second flow rate larger than the first flow rate S220). In other words, the first flow rate is made smaller than the second flow rate, and the cleaning process is performed.

In the gas supply hole 28 corresponding to the second region in which the cleaning gas is introduced at the second flow rate, the radicals generated in the processing vessel 10 as described above with reference to Fig. 4 (a) It is difficult to enter the gas passages 55a and 55b from the gas passage 10. However, in the gas supply hole 28 corresponding to the first region in which the cleaning gas is introduced at the first flow rate smaller in flow rate than the second flow rate, as shown in Fig. 4 (b) It becomes easy for one of the radicals to enter the gas flow paths 55a, 55b from the processing vessel 10. The introduced radical decomposes and removes the reaction product R adhered on the inner surface of the gas flow path 55. That is, the gas flow path 55 corresponding to the first region is cleaned by the contained radical.

Next, oxygen gas is supplied to the first region at a third flow rate, and oxygen gas is supplied to the second region at a fourth flow rate smaller than the third flow rate (S230). In other words, the third flow rate is made larger than the fourth flow rate, and the cleaning process is performed.

As a result, oxygen radicals can enter the gas flow path 55 corresponding to the second area, so that the gas flow path 55 corresponding to the second area is also cleaned.

The flow rate ratio between the first flow rate and the second flow rate supplied in S220 is not limited, but is preferably set within a range of, for example, 0: 100 to 40: 60. Similarly, the flow rate ratio between the third flow rate and the fourth flow rate supplied in S230 is not limited, but is preferably set within a range of, for example, 100: 0 to 60:40. The flow rate ratio between the first flow rate and the second flow rate may be equal to or different from the flow rate ratio between the fourth flow rate and the third flow rate. The reaction product R adhered to the gas passage 55 differs depending on the processing conditions of the plasma treatment using the substrate processing apparatus 1 of Fig. Therefore, it is important to sufficiently remove the reaction product R in the gas passage 55 by adjusting the flow rate ratio and the cleaning time according to the deposition amount of the reaction product R.

In the present embodiment, the diffusion chamber 50 is divided into at least two zones by the annular partition member 26. For example, by using one annular partition wall member 26, the diffusion chamber 50 can be divided into two zones corresponding to the center portion and the edge portion of the wafer W, for example. In this case, the first region may correspond to the center portion, the second region may correspond to the edge portion, or the first region may correspond to the edge portion and the second region may correspond to the center portion.

In another form, the two annular partition wall members 26 can be used to divide the diffusion chamber 50 into three zones corresponding to, for example, the center portion, the middle portion and the edge portion of the wafer W have. In this case, for example, the first region may correspond to the center portion and the second region may correspond to the middle portion and the edge portion, or vice versa. The first region may correspond to the center portion and the middle portion, the second region may correspond to the edge portion, or vice versa. The first region may correspond to the center portion and the edge portion, the second region may correspond to the middle portion, or vice versa.

Further, in another form, by using the three annular partition wall members 26, for example, it is possible to partition into four zones corresponding to the center portion, the middle portion, the edge portion and the berry edge portion of the wafer W. [ In this case as well, the first area and the second area may be assigned in any combination.

That is, when N + 1 diffusion chambers 50 are provided by arranging, for example, N annular partition wall members 26, N + 1 diffusion chambers are appropriately divided into a first region and a second region, Can be allocated to the second area. When the first flow rate is relatively smaller than the second flow rate, first, the gas flow path 55 corresponding to the first region is cleaned in S220, and then the gas flow path 55 corresponding to the second region is removed in S230. Is cleaned.

The cleaning time in S220 and S230 is not limited, but is usually about half the cleaning time in S210.

In S220 and S230, not only the gas channels 55a and 55b can be efficiently cleaned, but also the reaction product adhering to the surface of the upper electrode 25 and the side wall of the processing vessel 10 can be cleaned. Therefore, compared with the conventional cleaning method described, for example, in S210, the entire cleaning time can be reduced. The cleaning method of the present embodiment has a feature that it is possible to easily perform accurate end point detection as described in the second embodiment to be described later.

In the cleaning process according to S210, S220, and S230, a process gas containing oxygen gas may be used as an example. In this case, since oxygen ions and oxygen radicals are generated, if silicon or the like is used as a material of the constituent elements of the substrate processing apparatus 1, they may react with each other to generate oxides such as silicon oxide (SiO ₂ ). The resulting oxide is attached, for example, to the surface of the upper electrode 25, the side wall of the processing vessel 10, and the like. Therefore, in this embodiment, in S240, a process gas containing a fluorine-containing gas is introduced into the processing vessel 10, and high-frequency electric power for plasma generation is applied to the lower electrode 20, It is preferable to generate a plasma of As a result, fluorine ions and fluorine radicals are generated from the fluorine-containing gas. The fluorine ion or the fluorine radical decomposes by reacting with the oxide attached to the surface of the upper electrode 25, the side wall of the processing vessel 10, and the like. The decomposed reaction product, fluorine ion, fluorine radical, and the like are discharged from the discharge port 60 by the discharge device 65 of the substrate processing apparatus.

As the fluorine-containing gas in S240, for example, a fluorocarbon straight chain saturated gas such as CF ₄ , C ₂ F ₆ , or C ₃ F ₈ expressed by C _x F _{2x + 2} or the like can be used. It is also possible to use a mixed gas containing other gases.

After S240, as an additional cleaning process (S250), oxygen gas is introduced into the processing vessel 10 and high-frequency electric power for plasma generation is applied to the lower electrode 20 to change the plasma of the oxygen gas Respectively. As a result, oxygen radicals (and oxygen ions) are generated from the oxygen gas, and the reaction products and oxides remaining in the processing vessel 10 can be decomposed and removed. The decomposed reaction products, oxides, ions, radicals, and the like are discharged from the discharge port 60 by the discharge device 65 of the substrate processing apparatus. Then, the cleaning method of this embodiment ends.

(First Embodiment)

Next, the present invention will be described in more detail by way of specific embodiments. First, an embodiment in which it is confirmed that the cleaning method of the present embodiment can efficiently remove reaction products adhered to the gas supply holes will be described.

1, the annular partition wall member 26 is disposed, and the diffusion chamber 50 is divided from the center side into two zones, that is, a center portion and an edge portion. A predetermined number of wafers were subjected to plasma treatment by using the substrate processing apparatus 1. [ After the plasma treatment, the wafer was taken out (refer to S200), and the substrate processing apparatus 1 after the plasma treatment was subjected to cleaning treatment at the following gas type and gas flow rate ratio based on the flow chart shown in Fig.

As the gas type and gas flow rate,

[Gas type and gas flow rate of S210]

Gas type: O ₂ gas and He gas

Gas flow rate: Center part: Edge part = 50: 50

[Gas type and gas flow rate of S220]

Gas type: O ₂ gas

Gas flow rate: Center part: Edge part = 5: 95

[Gas type and gas flow rate of S230]

Gas type: O ₂ gas

Gas flow rate: Center part: Edge part = 95: 5

[Gas type and gas flow rate of S240]

Gas type: CF ₄ gas and O ₂ gas

Gas flow rate: Center part: Edge part = 50: 50

[Gas type and gas flow rate of S250]

Gas type O ₂ gas and He gas

Gas flow rate: Center part: Edge part = 50: 50

.

As a comparative example, a conventional cleaning process in which steps S220 and S230 are not performed using the same substrate processing apparatus 1 was performed under the following conditions.

As the conditions of the gas type and the gas flow rate ratio,

[Gas type and gas flow rate of S210]

Gas type: O ₂ gas

Gas flow rate: Center part: Edge part = 50: 50

[Gas type and gas flow rate of S240]

Gas type: CF ₄ gas and O ₂ gas

Gas flow rate: Center part: Edge part = 50: 50

[Gas type and gas flow rate of S250]

Gas type: O ₂ gas and He gas

Gas flow rate: Center part: Edge part = 50: 50

.

After the cleaning method according to the present embodiment was carried out, the gas channels 55 and the gas supply holes 28 formed in the upper electrode 25 and the cover member 27 were confirmed by naked eyes, Not confirmed. On the other hand, the reaction product R remained in the gas flow path after the cleaning method according to the comparative embodiment. From this, it can be seen that the cleaning method according to the present embodiment can efficiently clean the gas passage 55 and the gas supply hole 28.

(Second Embodiment)

Next, an embodiment in which it is confirmed that the cleaning method of the present embodiment can stably remove reaction products will be described.

1, the annular partition wall member 26 is disposed, and the diffusion chamber 50 is divided from the center side into two zones, that is, a center portion and an edge portion. After the plasma processing for a predetermined number of wafers by using the substrate processing apparatus 1 and the plasma processing, the same cleaning processing as that of the first embodiment was repeated. In the plasma treatment, a plasma treatment was performed in which a deposition reaction product containing carbon was generated. Further, in the cleaning treatment, the emission intensity of the carbon monoxide radical (483 nm) generated by the reaction of the reaction product containing carbon with the plasma of the oxygen gas is detected from the plasma emission spectrum in the treatment vessel 10, Was detected. In the end point detection, the cleaning time was detected when the slope of the light emission intensity with respect to time became zero.

Fig. 5 is a schematic view for explaining an example of end point detection of the cleaning method according to the present embodiment. 5, the abscissa axis indicates the number of wafers W processed, and the ordinate axis indicates the cleaning time at the end point detection.

As shown in Fig. 5, in the cleaning method according to the present embodiment, the cleaning time at the end point detection is stable. When the cleaning time at the end point detection is unstable by the cleaning method, it means that there is a reaction product not removed at the time of cleaning. Therefore, the cleaning method according to the present embodiment, in which the cleaning time at the end point detection is stable, is a process capable of stably removing the reaction products even when the plasma treatment is repeated.

Note that the present invention is not limited to the configurations shown in the above-described embodiment, such as combinations with other elements. This point can be changed within a range not deviating from the gist of the present invention, and can be appropriately determined according to the application form.

1: substrate processing apparatus 10: processing vessel
15: gas supply source 20: lower electrode
25: upper electrode 26: annular partition wall member
27: cover member 28: gas supply hole
30: power supply device 32: first high frequency power source
33: first matcher 34: second high frequency power source
35: second matcher 40: shield ring
45: gas introduction port 50: diffusion chamber
55: gas flow path 60: exhaust port
65: Exhaust device 100: Control device
105: CPU 110: RAM
W: semiconductor wafer (object to be processed)

Claims (15)

A processing vessel,
A holding portion provided in the processing container for holding the substrate,
An electrode plate provided in the processing container and opposed to the holder,
A gas supply source for supplying a cleaning gas,
A plurality of gas passages defined by a first area corresponding to a position inside the first surface of the substrate and a second area corresponding to a second in-plane position where the in-plane position of the substrate is different from the first in- A gas supply part for discharging the cleaning gas from the gas supply source to the space between the holding part and the electrode plate through the plurality of gas flow paths,
Frequency power is supplied to at least one of the holding portion and the electrode plate, whereby the cleaning gas in the space is converted into a plasma by applying a high-
The cleaning method comprising: a cleaning step of cleaning the substrate processing apparatus with the cleaning gas,
Supplying a first flow rate of the cleaning gas to the first region corresponding to the first gas flow channel among the plurality of gas flow channels to the second region corresponding to the second gas flow channel among the plurality of gas flow channels, A first cleaning step of discharging the cleaning gas into the space through the plurality of gas flow paths and cleaning the first gas flow path by the plasma of the cleaning gas in the space,
The third flow rate of the cleaning gas supplied to the first region is made larger than the fourth flow rate of the cleaning gas supplied to the second region so that the cleaning gas is discharged into the space through the plurality of gas flow channels A second cleaning step of cleaning the second gas flow path by the plasma of the cleaning gas in the space,
.
The method according to claim 1,
Wherein the ratio of the first flow rate to the second flow rate is in the range of 0: 100 to 40: 60,
Wherein the ratio of the third flow rate to the fourth flow rate is within a range of 100: 0 to 60:40
Cleaning method.
3. The method according to claim 1 or 2,
Wherein the position in the first plane is one of the center portion and the edge portion when the substrate is divided from the center side into the center portion and the edge portion,
Wherein the position in the second plane is the other side of the center portion and the edge portion
Cleaning method.
3. The method according to claim 1 or 2,
Wherein the first in-plane position includes at least one or two regions of the center portion, the middle portion, and the edge portion when the substrate is partitioned from the center side to the center portion, the middle portion, and the edge portion,
Wherein the second in-plane position is a region of the center portion, the middle portion, and the remainder of the edge portion
Cleaning method.
3. The method according to claim 1 or 2,
The position in the first plane may be one or more of the center portion, the middle portion, the edge portion and the berry edge portion when the substrate is partitioned from the center side into the center portion, the middle portion, the edge portion and the berry edge portion. And includes three regions,
Wherein the second in-plane position is a region of the center portion, the middle portion, the edge portion, and the remainder of the berry edge portion
Cleaning method.
3. The method according to claim 1 or 2,
The cleaning method is a method for cleaning a deposit containing carbon adhered to at least the first gas flow path and the second gas flow path, wherein the cleaning gas includes oxygen gas.
3. The method according to claim 1 or 2,
And a third cleaning step of cleaning at least the inner wall of the processing vessel by plasma of a cleaning gas containing oxygen before the first cleaning step.
3. The method according to claim 1 or 2,
And a fourth cleaning step of cleaning at least the inner wall of the processing container by a plasma of a cleaning gas containing fluorine after the second cleaning step.
9. The method of claim 8,
And a fifth cleaning step of cleaning at least the inner wall of the processing container by a plasma of a cleaning gas containing oxygen after the fourth cleaning step.
3. The method according to claim 1 or 2,
And a third cleaning step of cleaning at least the inner wall of the processing vessel by a plasma of cleaning gas containing oxygen before the first cleaning step,
And a fourth cleaning step of cleaning at least the inner wall of the processing container by a plasma of a cleaning gas containing fluorine after the second cleaning step,
And a fifth cleaning step of cleaning at least the inner wall of the processing container by a plasma of a cleaning gas containing oxygen after the fourth cleaning step,
Wherein in the third cleaning step, the fourth cleaning step and the fifth cleaning step, the flow rate of the cleaning gas supplied to the first region is equal to the flow rate of the cleaning gas supplied to the second region, Way.
3. The method according to claim 1 or 2,
Wherein the gas supply unit is a showerhead formed inside the electrode plate.
A substrate processing apparatus comprising:
A processing vessel,
A holding portion provided in the processing container for holding the substrate,
An electrode plate provided in the processing container and opposed to the holder,
A gas supply source for supplying a cleaning gas,
A plurality of gas passages defined by a first area corresponding to a position inside the first surface of the substrate and a second area corresponding to a second in-plane position where the in-plane position of the substrate is different from the first in- A gas supply part for discharging the cleaning gas from the gas supply source to the space between the holding part and the electrode plate through the plurality of gas flow paths,
A high frequency power source for supplying the high frequency electric power to at least one of the holding portion and the electrode plate to plasmaize the cleaning gas in the space,
A controller for controlling the operation of the substrate processing apparatus;
Lt; / RTI &
Wherein,
Supplying a first flow rate of the cleaning gas to the first region corresponding to the first gas flow channel among the plurality of gas flow channels to the second region corresponding to the second gas flow channel among the plurality of gas flow channels, A first cleaning step of discharging the cleaning gas into the space through the plurality of gas flow paths and cleaning the first gas flow path by the plasma of the cleaning gas in the space,
The third flow rate of the cleaning gas supplied to the first region is made larger than the fourth flow rate of the cleaning gas supplied to the second region so that the cleaning gas is discharged into the space through the plurality of gas flow channels A second cleaning step of cleaning the second gas flow path by the plasma of the cleaning gas in the space,
To control the substrate processing apparatus to perform the process
/ RTI >
13. The method of claim 12,
Wherein the first cleaning process and the second cleaning process are performed after RIE (Reactive Ion Etching) is performed on the substrate.
3. The method according to claim 1 or 2,
Wherein the first cleaning step and the second cleaning step are performed after RIE (Reactive Ion Etching) is performed on the substrate.
15. The method of claim 14,
Further comprising the step of removing the substrate subjected to the RIE before the first cleaning step and the second cleaning step to the outside of the processing container.

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