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KR101877452B1 - Patterning apparatus and method of conductive material - Google Patents

Patterning apparatus and method of conductive material Download PDF

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KR101877452B1
KR101877452B1 KR1020160061597A KR20160061597A KR101877452B1 KR 101877452 B1 KR101877452 B1 KR 101877452B1 KR 1020160061597 A KR1020160061597 A KR 1020160061597A KR 20160061597 A KR20160061597 A KR 20160061597A KR 101877452 B1 KR101877452 B1 KR 101877452B1
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conductive material
transfer substrate
substrate
laser beam
unit
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KR20170130852A (en
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장원석
박철민
최원석
조성학
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한국기계연구원
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Abstract

본 발명의 일 실시예에 따른 도전 물질의 패터닝 장치는 액체 금속을 포함하는 도전 물질이 형성된 전사 기판, 상기 전사 기판을 회전시키는 회전부, 상기 도전 물질에 레이저 빔을 조사하는 레이저부, 상기 전사 기판과 이격되어 위치하며 상기 도전 물질을 수용하는 수용 기판이 탑재되는 스테이지, 그리고 상기 전사 기판과 인접하여 위치하며 상기 도전 물질을 냉각시키는 냉각부를 포함한다.According to an aspect of the present invention, there is provided an apparatus for patterning a conductive material, including: a transfer substrate on which a conductive material containing a liquid metal is formed; a rotation unit for rotating the transfer substrate; a laser unit for irradiating the conductive material with a laser beam; And a cooling unit located adjacent to the transfer substrate and cooling the conductive material. The conductive substrate may be a conductive substrate.

Description

도전 물질의 패터닝 장치 및 방법{PATTERNING APPARATUS AND METHOD OF CONDUCTIVE MATERIAL}TECHNICAL FIELD [0001] The present invention relates to a patterning apparatus and a patterning method for a conductive material,

본 발명은 도전 물질의 패터닝 장치 및 방법에 관한 것이다.The present invention relates to an apparatus and a method for patterning a conductive material.

금속을 패터닝하기 위한 방법으로 사진 식각 공정, 레이저 전사 공정 등이 사용되고 있다.As a method for patterning metal, a photolithography process, a laser transfer process, and the like are used.

특히, 레이저 전사 공정은 금속을 전사 기판의 앞면에 코팅하고 레이저 빔을 전사 기판의 뒷면에 조사하여 수용 기판에 특정 패턴의 금속만을 전사시키므로 사진 식각 공정에 비해 제조 공정이 단순하고 제조 비용이 절감된다.In particular, the laser transfer process simplifies the manufacturing process and reduces the manufacturing cost compared to the photolithography process because the metal is coated on the front surface of the transfer substrate and the laser beam is irradiated on the back surface of the transfer substrate to transfer only the metal of a specific pattern to the receiving substrate .

그러나, 레이저 전사 공정으로 금속을 전사시키는 경우에는 레이저 빔의 강한 에너지에 의해 금속에 크랙(crack) 등의 손상이 발생할 수 있어 유연 소자에 적용하기 어렵다.However, when a metal is transferred by a laser transfer process, cracks or the like may be damaged due to the strong energy of the laser beam, which is difficult to apply to a flexible device.

또한, 전사 기판에 강하게 부착된 금속을 수용 기판으로 용이하게 전사하기 위해서는 전사 기판과 금속 사이에 별도의 희생층을 형성하여야 하므로 제조 공정이 복잡해진다. Further, in order to easily transfer the metal strongly adhered to the transfer substrate to the receiving substrate, a separate sacrificial layer must be formed between the transfer substrate and the metal, thereby complicating the manufacturing process.

본 발명은 제조 공정이 단순한 도전 물질의 패터닝 장치 및 방법을 제공하고자 한다.The present invention seeks to provide an apparatus and method for patterning a conductive material that is simple in manufacturing process.

본 발명의 일 실시예에 따른 도전 물질의 패터닝 장치는 액체 금속을 포함하는 도전 물질이 형성된 전사 기판, 상기 전사 기판을 회전시키는 회전부, 상기 도전 물질에 레이저 빔을 조사하는 레이저부, 상기 전사 기판과 이격되어 위치하며 상기 도전 물질을 수용하는 수용 기판이 탑재되는 스테이지, 그리고 상기 전사 기판과 인접하여 위치하며 상기 도전 물질을 냉각시키는 냉각부를 포함한다.According to an aspect of the present invention, there is provided an apparatus for patterning a conductive material, including: a transfer substrate on which a conductive material containing a liquid metal is formed; a rotation unit for rotating the transfer substrate; a laser unit for irradiating the conductive material with a laser beam; And a cooling unit located adjacent to the transfer substrate and cooling the conductive material. The conductive substrate may be a conductive substrate.

상기 수용 기판에 설치되며 상기 도전 물질과 상기 수용 기판간의 거리를 측정하는 거리 센서를 더 포함할 수 있다.And a distance sensor installed on the receiving substrate and measuring a distance between the conductive material and the receiving substrate.

상기 스테이지의 위치를 조절하는 스테이지 위치 조절부를 더 포함할 수 있다.And a stage position adjusting unit for adjusting a position of the stage.

상기 회전부에 연결되어 있으며 상기 전사 기판의 위치를 조절하는 전사 기판 위치 조절부를 더 포함할 수 있다.And a transfer substrate position adjusting unit connected to the rotation unit and adjusting the position of the transfer substrate.

상기 레이저 빔의 파장은 300nm 내지 1500nm이며, 상기 레이저 빔의 펄스 에너지는 0.2 J/cm2 내지 3J/cm2 일 수 있다.The wavelength of the laser beam may be 300 nm to 1500 nm, and the pulse energy of the laser beam may be 0.2 J / cm 2 to 3 J / cm 2 .

상기 액체 금속은 갈륨(Gallium)계 합금을 포함할 수 있다.The liquid metal may include a gallium-based alloy.

상기 전사 기판은 상기 액체 금속과 접촉할 수 있다.The transfer substrate may be in contact with the liquid metal.

또한, 본 발명의 일 실시예에 따른 도전 물질의 패터닝 방법은 전사 기판 위에 액체 금속을 포함하는 도전 물질을 형성하는 단계, 상기 전사 기판에 연결된 회전부를 이용하여 상기 전사 기판을 회전시켜 레이저 빔에 대응하는 위치에 상기 도전 물질을 위치시키는 단계, 상기 레이저 빔을 이용하여 상기 전사 기판으로부터 상기 도전 물질을 박리시켜 수용 기판에 전사하는 단계, 그리고 상기 전사 기판에 인접한 냉각부를 이용하여 상기 도전 물질을 냉각시키는 단계를 포함할 수 있다.According to another aspect of the present invention, there is provided a method of patterning a conductive material, the method comprising: forming a conductive material containing a liquid metal on a transfer substrate; rotating the transfer substrate using a rotation unit connected to the transfer substrate, A step of separating the conductive material from the transfer substrate using the laser beam and transferring the conductive material to a receiving substrate, and cooling the conductive material using a cooling unit adjacent to the transfer substrate Step < / RTI >

상기 전사 기판 위에 상기 도전 물질을 형성하는 단계는 상기 전사 기판의 표면을 플라즈마 처리하는 단계, 그리고 상기 전사 기판에 상기 도전 물질을 코팅하는 단계를 포함할 수 있다.The forming of the conductive material on the transfer substrate may include plasma processing the surface of the transfer substrate, and coating the conductive material on the transfer substrate.

상기 수용 기판에 설치되는 거리 센서를 이용하여 상기 전사 기판에 형성된 도전 물질의 표면과 상기 수용 기판간의 거리를 조절하는 단계를 더 포함할 수 있다.And adjusting a distance between the surface of the conductive material formed on the transfer substrate and the receiving substrate using a distance sensor provided on the receiving substrate.

상기 회전부에 연결된 전사 기판 위치 조절부를 이용하여 상기 전사 기판의 위치를 조절하는 단계를 더 포함할 수 있다.And adjusting a position of the transfer substrate using a transfer substrate position adjusting unit connected to the rotation unit.

상기 레이저 빔의 파장은 300nm 내지 1500nm이며, 상기 레이저 빔의 펄스 에너지는 0.2 J/cm2 내지 3J/cm2 일 수 있다.The wavelength of the laser beam may be 300 nm to 1500 nm, and the pulse energy of the laser beam may be 0.2 J / cm 2 to 3 J / cm 2 .

상기 액체 금속은 갈륨(Gallium)계 합금을 포함할 수 있다.The liquid metal may include a gallium-based alloy.

본 발명의 일 실시예에 따른 도전 물질의 패터닝 장치 및 방법은 액체 금속을 포함하는 도전 물질과 전사 기판간의 결합력이 크지 않으므로 작은 에너지의 레이저 빔을 이용하여 액체 금속을 포함하는 도전 물질을 용이하게 패터닝할 수 있다. 따라서, 작은 선폭의 패턴을 형성할 수 있다.The apparatus and method for patterning a conductive material according to an embodiment of the present invention can easily pattern a conductive material containing a liquid metal by using a laser beam of a small energy because the coupling force between the conductive material including the liquid metal and the transfer substrate is not large, can do. Therefore, a pattern with a small line width can be formed.

또한, 액체 금속을 포함하는 도전 물질과 전사 기판간의 결합력이 크지 않으므로 도전 물질과 전사 기판간에 별도의 희생층이 요구되지 않아 제조 공정이 단순해진다. In addition, since the bonding force between the conductive material including the liquid metal and the transfer substrate is not large, a separate sacrificial layer is not required between the conductive material and the transfer substrate, thereby simplifying the manufacturing process.

또한, 액체 금속을 포함하는 도전 물질은 레이저 빔에 의해 손상되어도 전사 후에 결함이 스스로 메워지므로 공정 효율이 높아진다. Further, even if the conductive material containing the liquid metal is damaged by the laser beam, the defect is self-contained after the transfer, so that the process efficiency is enhanced.

또한, 유연한 액체 금속을 포함하는 도전 물질을 패터닝할 수 있으므로 유연 소자에 적용 가능하다.Further, since a conductive material including a flexible liquid metal can be patterned, it is applicable to a flexible device.

도 1은 본 발명의 일 실시예에 따른 도전 물질의 패터닝 장치의 개략적인 도면이다.
도 2 내지 도 6은 본 발명의 일 실시예에 따른 도전 물질의 패터닝 장치를 이용한 도전 물질의 패터닝 방법을 순서대로 도시한 도면이다.1 is a schematic view of a patterning apparatus for a conductive material according to an embodiment of the present invention.
FIGS. 2 to 6 are views sequentially illustrating a patterning method of a conductive material using a patterning apparatus for a conductive material according to an embodiment of the present invention.

이하, 첨부한 도면을 참고로 하여 본 발명의 여러 실시예들에 대하여 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자가 용이하게 실시할 수 있도록 상세히 설명한다. 본 발명은 여러 가지 상이한 형태로 구현될 수 있으며 여기에서 설명하는 실시예들에 한정되지 않는다.DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention may be embodied in many different forms and is not limited to the embodiments described herein.

본 발명을 명확하게 설명하기 위해서 설명과 관계없는 부분은 생략하였으며, 명세서 전체를 통하여 동일 또는 유사한 구성요소에 대해서는 동일한 참조 부호를 붙이도록 한다.In order to clearly illustrate the present invention, parts not related to the description are omitted, and the same or similar components are denoted by the same reference numerals throughout the specification.

그러면 본 발명의 일 실시예에 따른 도전 물질의 패터닝 장치에 대하여 도 1을 참고로 상세하게 설명한다.A patterning apparatus for a conductive material according to an embodiment of the present invention will now be described in detail with reference to FIG.

도 1은 본 발명의 일 실시예에 따른 도전 물질의 패터닝 장치의 개략적인 도면이다.1 is a schematic view of a patterning apparatus for a conductive material according to an embodiment of the present invention.

도 1에 도시한 바와 같이, 본 발명의 일 실시예에 따른 도전 물질의 패터닝 장치는 액체 금속을 포함하는 도전 물질(1)이 형성된 전사 기판(10), 전사 기판(10)에 연결되는 회전부(20), 전사 기판(10)에 레이저 빔(2)을 조사하는 레이저부(30), 전사 기판(10)과 이격되어 아래에 위치하는 스테이지(40), 그리고 및 도전 물질(10)을 냉각시키는 냉각부(50)를 포함한다. 1, an apparatus for patterning a conductive material according to an exemplary embodiment of the present invention includes a transfer substrate 10 having a conductive material 1 formed of a liquid metal, a rotation unit connected to the transfer substrate 10, A laser unit 30 for irradiating the transfer substrate 10 with a laser beam 2, a stage 40 disposed below the transfer substrate 10 and a stage 40 for cooling the conductive material 10, And a cooling unit 50.

전사 기판(10)은 원판 형상이나, 반드시 여기에 한정되는 것은 아니며, 다양한 형상으로 변형이 가능하다. 전사 기판(10)은 레이저 빔(2)이 도전 물질(1)에 효율적으로 조사될 수 있도록 투명한 물질일 수 있다. 전사 기판(10)은 소다 석회 유리(soda lime glass), 쿼츠(quartz), 사파이어(sapphire) 등 중에서 선택된 어느 하나일 수 있다.The transfer substrate 10 is in the form of a disk, but is not necessarily limited thereto, and can be modified into various shapes. The transfer substrate 10 may be a transparent material so that the laser beam 2 can be efficiently irradiated onto the conductive material 1. [ The transfer substrate 10 may be any one selected from soda lime glass, quartz, sapphire, and the like.

도전 물질(1)은 전사 기판(10)의 아래에 접촉하여 코팅된다. 도전 물질(1)은 액체 금속을 포함하며, 액체 금속은 GaIn, GaInSn, GaInSnZn 등의 갈륨(Gallium)계 합금을 포함할 수 있다. 고체 금속을 포함하는 도전 물질을 전사시키는 경우, 고체 금속을 포함하는 도전 물질과 전사 기판(10)간의 결합력은 크므로 도전 물질을 전사 기판(10)으로부터 용이하게 박리시키기 위해 희생층을 도전 물질과 전사 기판(10) 사이에 형성하게 된다. 희생층은 레이저 빔(2)에 의해 분해되므로 도전 물질을 전사 기판으로부터 용이하게 박리시킬 수 있다. 그러나, 액체 금속을 포함하는 도전 물질(1)과 전사 기판(10)간의 결합력은 크지 않으므로 액체 금속을 포함하는 도전 물질(1)과 전사 기판(10)간에 별도의 희생층이 요구되지 않아 제조 공정이 단순해진다. The conductive material 1 is coated in contact with the lower surface of the transfer substrate 10. The conductive material 1 includes a liquid metal, and the liquid metal may include a Gallium-based alloy such as GaIn, GaInSn, GaInSnZn, or the like. When the conductive material containing the solid metal is transferred, the bonding force between the conductive material including the solid metal and the transfer substrate 10 is large. Therefore, in order to easily peel off the conductive material from the transfer substrate 10, And is formed between the transfer substrate 10. The sacrificial layer is decomposed by the laser beam 2, so that the conductive material can be easily peeled off from the transfer substrate. However, since the bonding force between the conductive material 1 including the liquid metal and the transfer substrate 10 is not large, a separate sacrificial layer is not required between the conductive material 1 containing the liquid metal and the transfer substrate 10, This simplifies.

회전부(20)는 전사 기판(10)의 위에 부착되어 있으며, 회전부(20)는 전사 기판(10)의 중심에 위치하는 구동 모터일 수 있다. 회전부(20)가 회전하면서 레이저 빔(2)이 조사되는 도전 물질(1)의 영역을 변경할 수 있다. The rotation unit 20 may be attached to the transfer substrate 10 and the rotation unit 20 may be a drive motor located at the center of the transfer substrate 10. The area of the conductive material 1 irradiated with the laser beam 2 can be changed while the rotary part 20 rotates.

레이저부(30)는 전사 기판(10)에 코팅된 도전 물질(1)에 레이저 빔(2)을 조사하여 도전 물질(1)을 전사 기판(10)으로부터 분리시킨다. 레이저부(30)는 비점수차 방법(astigmatic method)을 이용하여 레이저 빔(2)을 도전 물질(1)에 집속한다.The laser unit 30 irradiates the laser beam 2 onto the conductive material 1 coated on the transfer substrate 10 to separate the conductive material 1 from the transfer substrate 10. The laser part 30 focuses the laser beam 2 onto the conductive material 1 using an astigmatic method.

레이저 빔(2)이 액체 금속을 포함하는 도전 물질(1)에 조사되는 경우, 도전 물질(1)은 팽창하여 전사 기판(10)으로부터 분리된다. 즉, 전사 기판(10)보다 도전 물질(1)의 열전도도(thermal conductivity)가 더 크기 때문에 레이저 빔(2)의 열은 주로 도전 물질(1) 내부에 머무르게 된다. 따라서, 레이저 빔(2)에 의해 국부적으로 급격하게 온도가 높아진 도전 물질(1)은 표면 장력과 점도가 낮아진다. 따라서, 도전 물질은 팽창하며 전사 기판(10)과의 결합력이 낮아지게 된다. 결과적으로, 레이저 빔(2)이 조사된 영역의 도전 물질(1)은 전사 기판(10)으로부터 분리되어 마주보는 수용 기판(3)으로 전사된다. When the laser beam 2 is irradiated to the conductive material 1 containing the liquid metal, the conductive material 1 expands and separates from the transfer substrate 10. That is, since the thermal conductivity of the conductive material 1 is larger than that of the transfer substrate 10, the heat of the laser beam 2 mainly stays in the conductive material 1. Therefore, the conductive material 1 whose temperature is locally increased suddenly by the laser beam 2 has a low surface tension and a low viscosity. Therefore, the conductive material expands and the bonding force with the transfer substrate 10 becomes low. As a result, the conductive material 1 in the region irradiated with the laser beam 2 is separated from the transfer substrate 10 and transferred to the opposing receiving substrate 3.

레이저 빔(2)은 레이저 빔(2)의 파장은 300nm 내지 1500nm으로서, 자외선, 가시광선 및 적외선을 사용할 수 있다.In the laser beam 2, the wavelength of the laser beam 2 is 300 nm to 1500 nm, and ultraviolet rays, visible rays, and infrared rays can be used.

레이저부(30)는 전사 기판(10) 및 도전 물질(1)에 열 영향부를 발생시키지 않고 순간적으로 강한 에너지를 액체 금속을 포함하는 도전 물질(1)에 집속하기 위하여 나노초(nanosecond), 피코초(picosecond), 펨토초(femtosecond)의 펄스폭(pulse duration)을 갖는 레이저 빔(2)를 사용한다. 이러한 레이저 빔(2)의 펄스 에너지는 0.2 J/cm2 내지 3J/cm2 일 수 있다. 레이저 빔(2)의 펄스 에너지가 0.2 J/cm2 보다 작으면 도전 물질(1)을 박리시키기 어렵고, 레이저 빔(2)의 펄스 에너지가 3J/cm2 보다 높으면 도전 물질(1)에 손상이 많이 발생하게 된다. The laser unit 30 is used for focusing nanosecond, picosecond, and the like on the transfer substrate 10 and the conductive material 1 in order to focus the instantaneous strong energy to the conductive material 1 containing the liquid metal, a laser beam 2 having a picosecond and a pulse duration of femtosecond is used. The pulse energy of the laser beam 2 may be 0.2 J / cm 2 to 3 J / cm 2 . If the pulse energy of the laser beam 2 is less than 0.2 J / cm 2 , it is difficult to peel off the conductive material 1 and if the pulse energy of the laser beam 2 is higher than 3 J / cm 2 , A lot occurs.

이와 같이, 액체 금속을 포함하는 도전 물질과 전사 기판간의 결합력이 크지 않으므로 작은 에너지의 레이저 빔을 이용하여 액체 금속을 포함하는 도전 물질을 용이하게 패터닝할 수 있다. 따라서, 작은 선폭의 패턴을 형성할 수 있다.Since the bonding force between the conductive material including the liquid metal and the transfer substrate is not large, the conductive material containing the liquid metal can be easily patterned using the laser beam of low energy. Therefore, a pattern with a small line width can be formed.

또한, 액체 금속을 포함하는 도전 물질은 레이저 빔에 의해 손상되어도 전사 후에 결함이 스스로 메워지므로 공정 효율이 높아진다. 또한, 유연한 액체 금속을 포함하는 도전 물질을 패터닝할 수 있으므로 유연 소자에 적용 가능하다.Further, even if the conductive material containing the liquid metal is damaged by the laser beam, the defect is self-contained after the transfer, so that the process efficiency is enhanced. Further, since a conductive material including a flexible liquid metal can be patterned, it is applicable to a flexible device.

전사 기판(10)의 위치를 조절하는 전사 기판 위치 조절부(70)가 회전부(20)에 연결된다. 따라서, 전사 기판 위치 조절부(70)를 이용하여 전사 기판(10)에 코팅된 도전 물질(1)에 레이저 빔(2)이 정확하게 집속되도록 조절한다.A transfer substrate position adjusting unit 70 for adjusting the position of the transfer substrate 10 is connected to the rotation unit 20. Therefore, the laser beam 2 is accurately focused on the conductive material 1 coated on the transfer substrate 10 by using the transfer substrate position adjusting unit 70.

스테이지(40)에 탑재된 수용 기판(3)은 도전 물질(1)을 수용한다. 수용 기판(3)은 실리콘, 유리, 폴리머 필름 중에서 선택된 어느 하나일 수 있다. The receiving substrate 3 mounted on the stage 40 receives the conductive material 1. [ The receiving substrate 3 may be any one selected from silicon, glass, and polymer films.

수용 기판(3)에는 전사 기판(10)에 코팅된 도전 물질(1)의 표면과 수용 기판(3)간의 거리(d)를 측정하는 거리 센서(60)가 설치된다. 스테이지(40)에는 스테이지(40)의 위치를 수평 방향(X, Y) 및 수직 방향(Y)으로 조절하는 스테이지 위치 조절부(80)가 연결된다. A distance sensor 60 for measuring the distance d between the surface of the conductive material 1 coated on the transfer substrate 10 and the receiving substrate 3 is provided on the receiving substrate 3. [ The stage 40 is connected with a stage position adjustment unit 80 for adjusting the position of the stage 40 in the horizontal direction (X, Y) and vertical direction (Y).

거리 센서(60)를 이용하여 도전 물질(1)의 표면과 수용 기판(3)간의 거리(d)를 측정하고, 측정 결과를 스테이지 위치 조절부(80)로 피드백하여 스테이지(40)의 위치를 조절한다. 따라서, 수용 기판(3)에 전사되는 도전 물질(1)의 전사 위치를 조절할 수 있다. 또한, 도전 물질(1)의 표면과 수용 기판(3)간의 거리(d)를 조절하여 전사하려는 패턴의 선폭을 조절할 수 있다.The distance d between the surface of the conductive material 1 and the receiving substrate 3 is measured using the distance sensor 60 and the measurement result is fed back to the stage position adjusting unit 80 to adjust the position of the stage 40 . Therefore, the transfer position of the conductive material 1 transferred to the receiving substrate 3 can be adjusted. In addition, the line width of the pattern to be transferred can be adjusted by adjusting the distance d between the surface of the conductive material 1 and the receiving substrate 3.

냉각부(50)는 전사 기판(10)과 인접하여 위치하며 도전 물질(1)을 냉각시킨다. 냉각부(50)는 전사 기판(10)의 온도를 저온으로 유지시킨다. 따라서, 레이저 빔(2)에 의해 가열된 전사 기판(10)에 의해 액체 금속을 포함하는 도전 물질(1)이 전사 기판(10)으로부터 이탈되는 것을 방지할 수 있다.The cooling unit 50 is located adjacent to the transfer substrate 10 and cools the conductive material 1. [ The cooling unit 50 maintains the temperature of the transfer substrate 10 at a low temperature. Therefore, it is possible to prevent the conductive material 1 including the liquid metal from being detached from the transfer substrate 10 by the transfer substrate 10 heated by the laser beam 2.

상기 본 발명의 일 실시예에 따른 도전 물질의 패터닝 장치를 이용한 도전 물질의 패터닝 방법에 대해 이하에서 도면을 참조하여 상세히 설명한다.A method of patterning a conductive material using the patterning apparatus for a conductive material according to an embodiment of the present invention will be described in detail with reference to the drawings.

도 2 내지 도 6은 본 발명의 일 실시예에 따른 도전 물질의 패터닝 장치를 이용한 도전 물질의 패터닝 방법을 순서대로 도시한 도면이다.FIGS. 2 to 6 are views sequentially illustrating a patterning method of a conductive material using a patterning apparatus for a conductive material according to an embodiment of the present invention.

우선, 도 2에 도시한 바와 같이, 산소(O2), 아르곤(Ar) 등의 플라즈마(4)를 이용하여 전사 기판(10)의 표면 에너지를 낮추는 표면 처리를 진행한다.First, as shown in Fig. 2, the surface treatment for lowering the surface energy of the transfer substrate 10 is carried out by using a plasma 4 such as oxygen (O 2 ) or argon (Ar).

다음으로, 도 3에 도시한 바와 같이, 표면 처리된 전사 기판(10)에 도전 물질(1)을 코팅한다. 예컨대, 가압 롤러(8)를 이용하여 액체 금속을 포함하는 도전 물질(1)을 0.5 Pa 내지 1.5 Pa의 압력으로 가압하여 코팅할 수 있다. Next, as shown in Fig. 3, the surface of the transfer substrate 10 is coated with the conductive material 1. Then, as shown in Fig. For example, the conductive material 1 containing a liquid metal may be coated by a pressure roller 8 under a pressure of 0.5 Pa to 1.5 Pa.

다음으로, 도 4에 도시한 바와 같이, 회전부(20)를 전사 기판(10)에 부착하고, 전사 기판(10)을 뒤집어서 도전 물질(1)이 수용 기판(3)과 마주보도록 한다. 그리고, 회전부(20)를 이용하여 전사 기판(10)을 회전시켜 레이저 빔(2)에 대응하는 위치에 도전 물질(1)을 위치시킨다. 4, the rotation unit 20 is attached to the transfer substrate 10, and the transfer substrate 10 is turned upside down so that the conductive material 1 faces the receiving substrate 3. Then, as shown in Fig. Then, the transfer substrate 10 is rotated using the rotation unit 20 to position the conductive material 1 at a position corresponding to the laser beam 2. [

그리고, 레이저 빔(2)을 이용하여 도전 물질(1)을 가열하여 전사 기판(10)으로부터 도전 물질(1)을 박리시켜 수용 기판(3)에 전사한다. 이 때, 전사 기판 위치 조절부(70)를 이용하여 전사 기판(10)에 코팅된 도전 물질(1)에 레이저 빔(2)이 정확하게 집속되도록 조절한다.The conductive material 1 is heated using the laser beam 2 to peel off the conductive material 1 from the transfer substrate 10 and transfer it to the receiving substrate 3. At this time, the laser beam 2 is accurately focused on the conductive material 1 coated on the transfer substrate 10 by using the transfer substrate positioning unit 70.

가열된 도전 물질(1)은 수용 기판(3)에 전사되어 도전 패턴(1')이 된다. 거리 센서(60)를 이용하여 도전 물질(1)의 표면과 수용 기판(3)간의 거리(d)를 측정하고, 측정 결과를 스테이지 위치 조절부(80)로 피드백하여 스테이지(40)의 위치를 조절한다. 따라서, 수용 기판(3)에 전사되는 도전 패턴(1')의 전사 위치를 조절할 수 있다. The heated conductive material 1 is transferred to the receiving substrate 3 to become the conductive pattern 1 '. The distance d between the surface of the conductive material 1 and the receiving substrate 3 is measured using the distance sensor 60 and the measurement result is fed back to the stage position adjusting unit 80 to adjust the position of the stage 40 . Therefore, the transfer position of the conductive pattern 1 'transferred to the receiving substrate 3 can be adjusted.

다음으로, 도 5에 도시한 바와 같이, 전사 기판(10)에 인접한 냉각부(50)를 이용하여 잔류하는 도전 물질(1") 및 전사 기판(10)을 냉각시킨다. 이는 레이저 빔(2)에 의해 쉽게 가열된 액체 금속을 포함하는 도전 물질(1")이 전사 기판(10)으로부터 이탈되는 것을 방지하기 위함이다. 5, the cooling material 50 adjacent to the transfer substrate 10 is used to cool the remaining conductive material 1 "and the transfer substrate 10. This causes the laser beam 2 to pass through, To prevent the conductive material 1 "containing the liquid metal, which is easily heated by the conductive material 1 ", from being detached from the transfer substrate 10.

다음으로, 도 6에 도시한 바와 같이, 도전 물질(1)이 전사 기판(10)으로부터 분리되어 수용 기판(3)으로 전사되면, 레이저 빔(2)에 대응하는 전사 기판(10)에는 도전 물질(1)이 없게 된다. 따라서, 전사 기판(10)을 회전시켜 전사 기판(10)에 잔류하는 도전 물질(1")이 레이저 빔(2)에 대응되도록 위치시킨다. 따라서, 대면적 수용 기판(3)에 연속적으로 도전 물질(1)을 전사할 수 있다.6, when the conductive material 1 is separated from the transfer substrate 10 and transferred to the receiving substrate 3, the transfer substrate 10, corresponding to the laser beam 2, (1). Therefore, the transfer substrate 10 is rotated so that the conductive material 1 "remaining on the transfer substrate 10 is positioned so as to correspond to the laser beam 2. Thus, (1) can be transferred.

본 발명을 앞서 기재한 바에 따라 바람직한 실시예를 통해 설명하였지만, 본 발명은 이에 한정되지 않으며 다음에 기재하는 특허청구범위의 개념과 범위를 벗어나지 않는 한, 다양한 수정 및 변형이 가능하다는 것을 본 발명이 속하는 기술 분야에 종사하는 자들은 쉽게 이해할 것이다.While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made therein without departing from the spirit and scope of the following claims. Those who are engaged in the technology field will understand easily.

1: 도전 물질 2: 레이저 빔
3: 수용 기판 10: 전사 기판
20: 회전부 30: 레이저부
40: 스테이지 50: 냉각부1: Conductive material 2: Laser beam
3: receiving substrate 10: transfer substrate
20: rotation part 30: laser part
40: stage 50: cooling section

Claims (13)

액체 금속을 포함하는 도전 물질이 형성된 전사 기판,
상기 전사 기판을 회전시키는 회전부,
상기 도전 물질에 레이저 빔을 조사하는 레이저부,
상기 전사 기판과 이격되어 위치하며 상기 도전 물질을 수용하는 수용 기판이 탑재되는 스테이지, 그리고
상기 전사 기판과 인접하여 위치하며 상기 도전 물질을 냉각시키는 냉각부
를 포함하고,
상기 레이저 빔의 파장은 300nm 내지 1500nm이며, 상기 레이저 빔의 펄스 에너지는 0.2 J/cm2 내지 3J/cm2 이고,
상기 액체 금속은 갈륨(Gallium)계 합금을 포함하며,
상기 전사 기판은 상기 액체 금속과 접촉하고,
상기 냉각부는 상기 회전부를 기준으로 상기 레이저부와 반대편에 위치하는 도전 물질의 패터닝 장치.A transfer substrate on which a conductive material containing a liquid metal is formed,
A rotation unit for rotating the transfer substrate,
A laser unit for irradiating the conductive material with a laser beam,
A stage which is located apart from the transfer substrate and on which a receiving substrate for receiving the conductive material is mounted,
And a cooling unit disposed adjacent to the transfer substrate for cooling the conductive material,
Lt; / RTI >
The wavelength of the laser beam is 300 to 1500 nm, the pulse energy of the laser beam is 0.2 J / cm 2 to 3 J / cm 2 ,
Wherein the liquid metal comprises a Gallium-based alloy,
Wherein the transfer substrate contacts the liquid metal,
Wherein the cooling unit is located on the opposite side of the laser unit with respect to the rotation unit. 제1항에서,
상기 수용 기판에 설치되며 상기 도전 물질과 상기 수용 기판간의 거리를 측정하는 거리 센서를 더 포함하는 도전 물질의 패터닝 장치.The method of claim 1,
And a distance sensor disposed on the receiving substrate and measuring a distance between the conductive material and the receiving substrate. 제2항에서,
상기 스테이지의 위치를 조절하는 스테이지 위치 조절부를 더 포함하는 도전 물질의 패터닝 장치.3. The method of claim 2,
And a stage position adjusting unit for adjusting a position of the stage. 제2항에서,
상기 회전부에 연결되어 있으며 상기 전사 기판의 위치를 조절하는 전사 기판 위치 조절부를 더 포함하는 도전 물질의 패터닝 장치.3. The method of claim 2,
And a transfer substrate position adjusting unit connected to the rotation unit and adjusting a position of the transfer substrate. 삭제delete 삭제delete 삭제delete 전사 기판 위에 액체 금속을 포함하는 도전 물질을 형성하는 단계,
상기 전사 기판에 연결된 회전부를 이용하여 상기 전사 기판을 회전시켜 레이저 빔에 대응하는 위치에 상기 도전 물질을 위치시키는 단계,
상기 레이저 빔을 이용하여 상기 전사 기판으로부터 상기 도전 물질을 박리시켜 수용 기판에 전사하는 단계, 그리고
상기 전사 기판에 인접한 냉각부를 이용하여 상기 도전 물질을 냉각시키는 단계
를 포함하고,
상기 레이저 빔의 파장은 300nm 내지 1500nm이며, 상기 레이저 빔의 펄스 에너지는 0.2 J/cm2 내지 3J/cm2 이고,
상기 액체 금속은 갈륨(Gallium)계 합금을 포함하며,
상기 전사 기판은 상기 액체 금속과 접촉하고,
상기 냉각부는 상기 회전부를 기준으로 레이저부와 반대편에 위치하는 도전 물질의 패터닝 방법.Forming a conductive material on the transfer substrate including a liquid metal,
Rotating the transfer substrate using a rotation unit connected to the transfer substrate to position the conductive material at a position corresponding to the laser beam,
Peeling the conductive material from the transfer substrate using the laser beam and transferring the conductive material to the receiving substrate, and
Cooling the conductive material using a cooling unit adjacent to the transfer substrate
Lt; / RTI >
The wavelength of the laser beam is 300 to 1500 nm, the pulse energy of the laser beam is 0.2 J / cm 2 to 3 J / cm 2 ,
Wherein the liquid metal comprises a Gallium-based alloy,
Wherein the transfer substrate contacts the liquid metal,
Wherein the cooling unit is located opposite to the laser unit with respect to the rotation unit. 제8항에서,
상기 전사 기판 위에 상기 도전 물질을 형성하는 단계는
상기 전사 기판의 표면을 플라즈마 처리하는 단계, 그리고
상기 전사 기판에 상기 도전 물질을 코팅하는 단계
를 포함하는 도전 물질의 패터닝 방법.9. The method of claim 8,
The step of forming the conductive material on the transfer substrate
Subjecting the surface of the transfer substrate to plasma treatment, and
Coating the conductive material on the transfer substrate
≪ / RTI > 제8항에서,
상기 수용 기판에 설치되는 거리 센서를 이용하여 상기 전사 기판에 형성된 도전 물질의 표면과 상기 수용 기판간의 거리를 조절하는 단계를 더 포함하는 도전 물질의 패터닝 방법.9. The method of claim 8,
Further comprising the step of adjusting a distance between the surface of the conductive material formed on the transfer substrate and the receiving substrate using a distance sensor provided on the receiving substrate. 제8항에서,
상기 회전부에 연결된 전사 기판 위치 조절부를 이용하여 상기 전사 기판의 위치를 조절하는 단계를 더 포함하는 도전 물질의 패터닝 방법.9. The method of claim 8,
And adjusting a position of the transfer substrate using a transfer substrate position adjusting unit connected to the rotating unit. 삭제delete 삭제delete
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