KR101876008B1 - Light emitting diode assembly and method for transfering thereof - Google Patents

Abstract

An object of the present invention is to provide an LED structure capable of easily transferring an LED module to another substrate by attaching the LED module to a support substrate and using a passivation layer having a weak adhesive force with the ultraviolet absorbing layer, and a method for transferring the LED structure. To this end, when a plurality of LED modules having a pn junction structure are bonded to a support substrate through a metal bonding layer, and adhesion of the LED module to the support substrate is weakened by light in a certain wavelength range, So that they are separated from each other in the support substrate. Accordingly, the present invention is advantageous in that the LED module can be easily transferred to another substrate by attaching the LED module to the support substrate and separating the LED module using a passivation layer having a weak adhesive force with the ultraviolet absorbing layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting diode (LED)

The present invention relates to a LED structure and a method of transferring the same. More specifically, the present invention relates to an LED structure capable of easily transferring an LED module to another substrate by attaching an LED module to a support substrate and using a passivation layer having a weak adhesive force with the ultraviolet absorbing layer And a transfer method thereof.

Recently, lighting devices composed of LEDs (Light Emitting Diodes) have a longer lifespan compared to conventional incandescent lamps or fluorescent lamps, have relatively low power consumption, and do not emit pollutants in the manufacturing process. And LEDs are being applied not only to display devices using light emission but also to backlight devices of lighting devices and LCD display devices.

In particular, LEDs can be driven at a relatively low voltage, but have the advantages of low heat generation and long life due to high energy efficiency. As technology for providing white light, which was difficult to implement in the past, has been developed, most light sources And it is expected that it will replace the device.

A typical structure of a nitride semiconductor light emitting device includes a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, a p-type nitride semiconductor layer and an active layer And a part of the region is removed by a process such as etching to expose a part of the upper surface of the n-type nitride semiconductor layer.

A p-type bonding electrode is formed after an n-type electrode is formed on the exposed n-type nitride semiconductor layer and a transparent electrode layer is formed on the p-type nitride semiconductor layer to form an ohmic contact.

On the other hand, LEDs applied to a medical device for a pixel display or a human body are generally required to be transferred to a flexible substrate having a thickness of 100 mu m or less and a very thin thickness of 30 mu m or less.

In this case, in order to transfer individual LEDs or arrays, an LED is attached to a separate support substrate, and heat is applied to the attached interface to induce a phase change from a solid state to a liquid state, thereby weakening the adhesive force of the interface, To the individual chips is used.

At this time, there is a problem in that some LEDs are not separated from the support substrate due to the problem of uniformity of the entire wafer due to the process of making the liquid from the solid state by applying heat to the interface.

Korean Patent Laid-Open Publication No. 10-2014-0111254 (entitled Micro Light Emitting Diode)

In order to solve such problems, the present invention provides a LED structure capable of easily transferring an LED module to another substrate by attaching an LED module to a supporting substrate and using a passivation layer having a weak adhesive force with the ultraviolet absorbing layer, and a method of transferring the same The purpose.

According to an aspect of the present invention, there is provided an LED module including: a plurality of LED modules having a metal bonding layer bonded to a support substrate; an ultraviolet absorbing layer having a weak adhesive strength when light of a certain wavelength is absorbed; The adhesive strength of the ultraviolet absorbing layer is reduced and the LED module is bonded to the support substrate with the metal bonding layer of the support substrate, And are separated in an individual or an array form.

In addition, the LED module according to the present invention is bonded to the support substrate through eutectic bonding via a metal bonding layer.

In addition, the LED module according to the present invention is characterized by being a horizontal structure, a vertical structure, a structure, and a flip structure.

In addition, the LED module according to the present invention is characterized by including an epitaxial structure from which a growth substrate is removed, a first electrode, a second electrode, and a protective layer.

The second electrode according to the present invention is formed of at least one material or alloy selected from the group consisting of ITO, InO2, SnO2, Ni, Au, Pd, Ag, Pt and Ti.

In addition, the metal bonding layer according to the present invention includes at least one of Au, AuSn, PdIn, InSn, NiSn, and Au-Au.

In addition, the LED module according to the present invention may further include a bonding separation layer between the protective layer and the metal bonding layer.

Further, the supporting substrate according to the present invention includes a supporting substrate main body; A passivation layer formed on the support substrate body; An ultraviolet absorbing layer formed on the passivation layer; And a metal bonding layer formed on the ultraviolet absorbing layer.

In addition, the support substrate main body according to the present invention is a rigid transparent substrate that is rigidly rigid to prevent bowing.

Further, the support substrate body according to the present invention is characterized by being made of any one of Si, GaAs, glass, sapphire, and plastic.

Also, the passivation layer according to the present invention includes at least one of SiO 2, SiN x, and Al 2 O 3.

The ultraviolet absorbing layer according to the present invention is characterized by absorbing ultraviolet rays in the range of 190 nm to 280 nm.

Also, the present invention provides a method of manufacturing an LED module, comprising the steps of: a) forming an epitaxial structure on a growth substrate, and forming at least one of a first electrode and a second electrode on the epitaxial structure; b) forming a metal bonding layer on the LED module; c) bonding the LED module to a support substrate having an ultraviolet absorbing layer whose adhesion is weakened when light of a certain wavelength range is absorbed and a metal bonding layer adhered to the metal bonding layer of the LED module; d) removing the growth substrate from the LED module and separating the growth substrate into individual epitaxial structures; And e) the LED module bonded together with the metal bonding layer of the support substrate is transferred from the support substrate to the carrier substrate by irradiating light of a certain wavelength range to the support substrate and reducing the adhesive force of the ultraviolet absorbing layer, As shown in FIG.

Further, the step b) may further comprise forming a bonding separation layer between the protective layer and the metal bonding layer, wherein the LED module transferred to the carrier substrate has a metal bonding layer The method comprising the steps of:

Further, in the step of separating into the epitaxial structure in the step d) according to the present invention, the metal bonding layer is also removed.

The present invention is advantageous in that the LED module can be easily transferred to another substrate by attaching the LED module to the support substrate and separating the LED module using a passivation layer having a weak adhesive force with the ultraviolet absorbing layer.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an exemplary view showing a LED structure according to the present invention. FIG.
2 is a view illustrating an example of a vertical LED module of an LED structure according to the present invention.
Fig. 3 is an illustration showing a support substrate of the LED structure according to Fig. 2; Fig.
4 is a view illustrating an LED module manufacturing process of the LED structure according to FIG. 2. FIG.
FIG. 5 is an exemplary view showing a transfer process of the LED structure according to FIG. 2;
6 is a cross-sectional view of the carrier substrate of the LED structure according to Fig. 2;
7 is an exemplary view showing a horizontal LED module of an LED structure according to the present invention.
8 is an exemplary view showing a process of bonding the LED module and the supporting substrate of the LED structure according to FIG. 7;
FIG. 9 is a view illustrating an LED module manufacturing process of the LED structure according to FIG. 7. FIG.
10 is an exemplary view showing a transfer process of the LED structure according to FIG. 7. FIG.
11 is a view illustrating a manufacturing process of a flip chip type LED module of an LED structure according to the present invention.
12 is an exemplary view showing a transfer process of the LED structure according to FIG.

Hereinafter, preferred embodiments of a LED structure and a method of transferring the LED structure according to the present invention will be described in detail with reference to the accompanying drawings.

(Embodiment 1)

FIG. 1 is a view showing an LED structure according to the present invention, FIG. 2 is an illustration showing a vertical LED module of the LED structure according to the present invention, FIG. 3 is a view showing a supporting substrate of the LED structure according to FIG. FIG. 4 is a view illustrating an LED module manufacturing process of the LED structure of FIG. 2, and FIG. 5 is a view illustrating a transfer process of the LED structure of FIG.

1 to 5, the LED structure according to the first embodiment has a structure in which a plurality of LED modules 100 having a pn junction structure are bonded to the support substrate 200 through the metal bonding layer 160, The bonded LED module 100 is separated from the supporting substrate 200 in an individual or an array form when the bonding strength with the supporting substrate 200 is weakened by the light in the wavelength range.

The LED module 100 has a vertical structure. The LED module 100 includes an epitaxial structure 120 from which the growth substrate 110 is removed, a first electrode 140, a second electrode 130, (150), a metal bonding layer (160), and a bonding separation layer (161).

That is, the LED module 100 includes an epitaxial structure 120 having a pn junction structure in which a first semiconductor layer 121, an active layer 122, and a second semiconductor layer 123 are sequentially formed on a growth substrate 110 And the growth substrate 110 is removed by laser lift-off (LLO), wet etching, or the like.

The growth substrate 110 may be a sapphire substrate or the like and a buffer layer (not shown) may be formed between the growth substrate 110 and the first semiconductor layer 121.

The first semiconductor layer 121 may be an n-type nitride semiconductor layer, and the second semiconductor layer 123 may be a p-type nitride semiconductor layer.

In addition, an n-GaN layer may be formed after the buffer layer is formed on the growth substrate 110 as needed. This buffer layer is used to reduce the lattice constant difference between the substrate and the semiconductor layer. Thus, an AlInN structure, an InGaN / GaN superlattice structure, an InGaN / GaN laminated structure, and a laminated structure of AlInGaN / InGaN / GaN.

A second electrode 130 is formed at a predetermined interval in the second semiconductor layer 123. A second electrode 130 is formed on the second semiconductor layer 123 to prevent heat from being emitted from the epitaxial structure 120, A two-electrode connection layer (not shown) may be provided.

The second electrode 130 is made of at least one material or alloy selected from the group consisting of ITO, InO2, SnO2, Ni, Au, Pd, Ag, Pt and Ti.

The first electrode 140 may be formed on a surface of the first semiconductor layer 121 exposed by removing the growth substrate 110 and may include a part of the first electrode 140 and an epitaxial structure exposed through an etching process A protective layer 150 may be formed to protect the first and second electrodes 120 and 120.

The first electrode 140 may be formed of one or more materials selected from the group consisting of ITO, InO2, SnO2, Ni, Au, Pd, Ag, Pt and Ti.

The passivation layer 150 is formed on the upper surface of the second semiconductor layer 123 of the epitaxial structure 120 and on the second electrode 130 to protect the epitaxial structure 120 and the second electrode 130, Ti, Pt, Pd, Cu, CuW, and the like can be formed from any one material selected from SiO2, Si3N4, Resin resin or SOG (Spin on Glass) , Mo, MoW, and Ag.

The metal bonding layer 160 is provided on the upper portion of the passivation layer 150 to bond the LED module 100 to the support substrate 200. The metal bonding layer 160 is formed of Au, AuSn, PdIn, InSn, NiSn, And is preferably bonded to the support substrate 200 by Eutectic Bonding.

That is, the metal bonding layer 160 may be formed to be firmly adhered to the support substrate 200 during the removal of the growth substrate 110 of the LED module 100, so that cracks or breakage of the epitaxial structure 120 .

The bonding separation layer 161 is made of a material such as Cr and Ti and is installed between the protective layer 150 and the metal bonding layer 160 to transfer the LED module 100 to the carrier substrate 300, The metal bonding layer 160 is removed, and the second electrode 130 is exposed through an additional process.

The support substrate 200 adheres to the LED module 100 and prevents bowing of the epitaxial structure 120 when the growth substrate 110 is removed from the LED module 100, The LED module 100 is separated from the LED module 100 by the light having a certain wavelength range, and the LED module 100 is separated from the LED module 100. As a result, A passivation layer 220, an ultraviolet absorbing layer 230, and a metal bonding layer 240. The supporting substrate main body 210 includes a supporting substrate main body 210, a passivation layer 220, an ultraviolet absorbing layer 230,

The support substrate main body 210 is made of a rigid material which is rigidly rigid to prevent bowing and is made of Si, GaAs, glass, sapphire, Plastic, or the like.

The passivation layer 220 is formed on one side of the support substrate body 210, and is formed of at least one of SiO 2, SiN x, and Al 2 O 3.

The ultraviolet absorbing layer 230 is formed on one side of the passivation layer 220 and includes an adhesive material having a photoreactive material which is weakened in response to light in the ultraviolet (UV) wavelength range, An adhesive material is deposited.

That is, when ultraviolet rays in the range of 190 nm to 280 nm are absorbed, for example, the ultraviolet absorbing layer 230 weakens the adhesive strength and weakens the adhesive force with the metal bonding layer 240.

In the present embodiment, the adhesive material is described as an acrylic adhesive material, but the present invention is not limited thereto, and any adhesive material that can be adhered at room temperature can be used.

The metal bonding layer 240 is formed on one side of the ultraviolet absorbing layer 230 and bonded to the metal bonding layer 160 formed on the LED module 100 through eutectic bonding, (Not shown).

Next, a method of transferring the LED structure according to the first embodiment will be described.

The LED module 100 includes an epitaxial structure 120 on which a first semiconductor layer 121, an active layer 122 and a second semiconductor layer 123 are sequentially formed on a growth substrate 110, So that the second electrode 130 is deposited on the second semiconductor layer 123 of the first electrode 120.

A protective layer 150 for protecting the second semiconductor layer 123 and the second electrode 130 is formed on the first semiconductor layer 123. A metal bonding layer (160).

A bonding separation layer 161 made of Cr, Ti or the like is formed between the protective layer 150 and the metal bonding layer 160 to remove the metal bonding layer 160.

When the LED module 100 is bonded to the metal bonding layer 240 of the support substrate 200 through the metal bonding layer 160, the growth substrate 110 is removed from the LED module 100, (120).

The bonding between the LED module 100 and the support substrate 200 may be performed at room temperature and may be performed under a predetermined pressure so as to increase the adhesion between the LED module 100 and the support substrate 200 .

If the growth substrate 110 is a sapphire substrate, it is removed using a laser lift-off (LLO). If the growth substrate 110 is a Si substrate, the growth substrate 110 is removed by wet etching.

The epitaxial structure 120 is etched up to the chip separation etching region 170 through a wet etching process and is separated into individual units to remove the metal bonding layers 160 and 240 from the metal etching region 180, .

Etchant, time, mixing ratio and the like may be determined according to the materials included in the metal bonding layers 160 and 240. [

No Etchant Mixture Time Etching One ₂ O + HF + H _{2 2} O ₂ 20: 1: 1 180 sec Ti 2 HNO ₃ + HCl 1: 3 180 sec Au 3 HF + HCL 1: 1 60 sec Sn 4 HNO ₃ + HCl 1: 3 120 sec Au 5 HF + HCL 1: 1 60 sec Sn 6 HNO ₃ + HCl 1: 3 120 sec Au 7 HF + HCL 1: 1 60 sec Sn 8 H ₂ SO ₄ + H ₂ O ₂ 1: 2 10 min Ti, Ni, Cu, Ag 9 BOE6: 1 X 5 min SiO2

In addition, the metal bonding layers 160 and 240 may be removed by laser scribing or diamond tip scribing.

The size of the separated LED module 100 is preferably in the range of 5 탆 to 300 탆. However, the size of the LED module 100 may be changed according to need.

After the metal etching is performed, a first electrode 140 is formed on the exposed first semiconductor layer 121, and a protective layer for protecting the first semiconductor layer 121 and the first electrode 140 is formed It is possible.

The LED module 100 divided into individual units is positioned below the LED module 100 so that the carrier substrate 300 can be transferred from the supporting substrate 200 to the carrier substrate 300, 200).

When the adhesion between the LED module 100 and the supporting substrate 200 is weakened by the ultraviolet rays, the bonded LED module 100 is separated from the supporting substrate 200 into the carrier substrate 300 And the carrier substrate 300 is bonded to the LED module 100 so that the carrier substrate 300 can be transferred.

The carrier substrate 300 has a structure for transferring the LED module 100 from the support substrate 200 and moving the carrier module 300. The carrier substrate 300 includes a carrier substrate body 310 and a carrier And a substrate bonding layer 320.

The carrier substrate main body 310 may be made of one of a flexible material that is flexible and rigid or a rigid material that is rigidly rigid and does not bend well and is made of PDMA, PI, PET, PO or the like Lt; / RTI >

6, the carrier substrate main body 310 is formed with a carrier substrate protrusion 310a protruding by a predetermined length from an upper surface thereof to form an arbitrary pattern in order to improve adhesion with the LED module 100, The LED module 1000 can be transferred in the form of individual, array, or arbitrary pattern through the carrier substrate protrusion 310a.

The carrier substrate protrusions 310a are formed such that the height P1 is 0 占 퐉 to 50 占 퐉 and the pitch P2 is 0 占 퐉 to 300 占 퐉. Here, 0 占 퐉 may be a state in which the carrier substrate projection part 310a does not protrude.

The carrier substrate adhesion layer 320 may be bonded to the LED module 100 bonded to the support substrate 200 to be transferred to the carrier substrate 300. The adhesion strength of the carrier substrate adhesion layer 320 may be determined by ultraviolet The adhesion strength of the support substrate 200 is set to be higher than that of the support substrate 200 having a weak adhesive force so that the LED module 100 can be easily transferred.

The LED module 100 transferred to the carrier substrate 300 may be etched to remove the metal bonding layer 160.

Therefore, the LED module can be easily transferred to another substrate by attaching the LED module to the support substrate and separating the LED module using a passivation layer having a weak adhesive force with the ultraviolet absorbing layer.

(Second Embodiment)

FIG. 7 is a view illustrating an example of the horizontal LED module of the LED structure according to the present invention, FIG. 8 is an exemplary view showing a process of bonding the LED module and the support substrate of the LED structure according to FIG. 7, FIG. 10 is an exemplary view illustrating a process of transferring an LED structure according to FIG. 7. Referring to FIG.

First, repetitive descriptions of the same components as those of the LED structure according to the first embodiment are omitted, and the same reference numerals are used for the same components.

As shown in FIGS. 7 to 10, the LED structure according to the second embodiment has a structure in which a plurality of LED modules 100a having a pn junction structure are bonded to the support substrate 200 through the metal bonding layer 160, The bonded LED module 100 is separated from the supporting substrate 200 in an individual or an array form when the bonding strength with the supporting substrate 200 is weakened by the light in the wavelength range.

The LED module 100a has a horizontal structure. The LED module 100a includes an epitaxial structure 120 from which the growth substrate 110 is removed, a first electrode 140, a second electrode 130, An electrode pad 130a, a protective layer 150, a metal bonding layer 160, and a bonding separation layer 161. [

The LED module 100a has a structure in which an epitaxial structure 120 having a pn junction structure in which a first semiconductor layer 121, an active layer 122, and a second semiconductor layer 123 are sequentially formed on a growth substrate 110 is grown And the growth substrate 110 is removed through laser lift-off (LLO), wet etching, or the like.

When the upper surface of the first semiconductor layer 121 is exposed by performing a patterning and etching process so that the first semiconductor layer 121 may be exposed at a predetermined interval on the second semiconductor layer 123, A second electrode 130 is formed on the upper surface of the layer 123 and a first electrode 140 is formed on the exposed part of the first semiconductor layer 121, An electrode pad 130a may be provided.

The first and second electrodes 130 and 140 are made of one or more materials or alloys selected from the group consisting of ITO, InO 2, SnO 2, Ni, Au, Pd, Ag, Pt and Ti.

The protective layer 150 is formed to prevent a short between the first electrode 140 and the second electrode 130 and the second electrode pad 130a. The protective layer 150 may be formed of SiO2, Si3N4, At least one selected material may be formed through SOG (Spin on Glass), and may include at least one of Ni, Ti, Pt, Pd, Cu, CuW, Mo, MoW and Ag.

The protective layer 150 may be deposited to protect the upper surface of the first electrode 140 and the entire upper surface of the second electrode pad 130a or may be deposited to protect the first electrode 140 and the second electrode pad 130a. A portion of the first electrode 140 and the second electrode pad 130a may be exposed by depositing a passivation layer 150 over the entire region, It can also be configured to be exposed.

The metal bonding layer 160 is provided on the upper part of the passivation layer 150 to bond the LED module 100a to the support substrate 200. The metal bonding layer 160 is formed of Au, AuSn, PdIn, InSn, NiSn, The supporting substrate 200 is bonded to the supporting substrate 200 by eutectic bonding to remove the growth substrate 110 from the LED module 100a, So that cracks or breakage of the epitaxial structure 120 can be prevented from occurring.

The bonding separation layer 161 is formed of a material such as Cr and Ti and is disposed between the protective layer 150 and the metal bonding layer 160 to transfer the LED module 100a to the carrier substrate 300, The metal bonding layer 160 is removed, and the second electrode pad 130a is exposed through an additional process.

The support substrate 200 adheres to the LED module 100a and prevents bowing of the epitaxial structure 120 when the growth substrate 110 is removed from the LED module 100a, The LED module 100a is separated from the LED module 100a by the light having a certain wavelength range and the LED module 100a is separated from the LED module 100a. And includes a support substrate main body 210, a passivation layer 220, an ultraviolet absorbing layer 230, and a metal bonding layer 240.

Next, a method of transferring the LED structure according to the second embodiment will be described.

The LED module 100a grows an epitaxial structure 120 on which a first semiconductor layer 121, an active layer 122 and a second semiconductor layer 123 are sequentially formed on a growth substrate 110, A portion of the semiconductor layer 121 is etched to form a mesa and a second electrode 130 is deposited on the mesa-etched second semiconductor layer 123.

A first electrode 140 is deposited on the first semiconductor layer 121 and a second electrode pad 130a is formed on the second electrode 130. The epitaxial structure 120 and the first electrode And a protective layer 150 for protecting the second electrode pad 130a and a metal bonding layer 160 for adhesion with the support substrate 200 are formed on the protective layer 150 .

A bonding separation layer 161 made of Cr, Ti or the like is formed between the protective layer 150 and the metal bonding layer 160 to remove the metal bonding layer 160.

When the LED module 100a is bonded to the metal bonding layer 240 of the support substrate 200 through the metal bonding layer 160, the growth substrate 110 is removed from the LED module 100a, (120).

The bonding between the LED module 100a and the support substrate 200 may be performed at a room temperature and may be pressed to a predetermined pressure so as to increase the adhesion between the LED module 100a and the support substrate 200 .

The epitaxial structure 120 is etched up to the chip separation etching region 170 through a wet etching process and separated into individual units to remove the metal bonding layers 160 and 240 from the metal etching region 180, Etching is performed.

The LED module 100a separated into individual units is positioned below the LED module 100a so that the carrier substrate 300 can be transferred from the supporting substrate 200 to the carrier substrate 300, 200).

When the adhesion between the LED module 100a and the supporting substrate 200 is weakened by the ultraviolet rays, the bonded LED module 100a is separated from the supporting substrate 200 into the carrier substrate 300 And the carrier substrate 300 is bonded to the LED module 100a so as to be transferred.

The LED module 100a transferred to the carrier substrate 300 can remove the metal bonding layer 160 through the etching of the bonding separation layer 161 and remove the first electrode 140 and the second electrode pad 130a may be exposed.

Therefore, the LED module can be easily transferred to another substrate by attaching the LED module to the support substrate and separating the LED module using a passivation layer having a weak adhesive force with the ultraviolet absorbing layer.

(Third Embodiment)

11 is a view illustrating a manufacturing process of a flip chip type LED module of the LED structure according to the present invention, and FIG. 12 is an exemplary view showing a transfer process of the LED structure according to FIG.

First, repetitive descriptions of the same constituent elements as those of the first embodiment are omitted, and the same reference numerals are used for the same constituent elements.

11 and 12, in the LED structure according to the third embodiment, a plurality of LED modules 100b having a pn junction structure are bonded to the support substrate 200 through the metal bonding layer 160, The bonded LED module 100b is separated from the supporting substrate 200 in an individual or an array form when the bonding strength with the supporting substrate 200 is weakened by the light in the wavelength range.

The LED module 100b has a flip structure. The LED module 100b includes an epitaxial structure 120 from which the growth substrate 110 is removed, a first electrode 140, a second electrode 130, A connection terminal 141 and a second electrode connection terminal 131, a passivation layer 150, a metal bonding layer 160, and a bonding separation layer 161.

The LED module 100b is formed by growing an epitaxial structure 120 of a pn junction structure in which a first semiconductor layer 121, an active layer 122 and a second semiconductor layer 123 are sequentially formed on a growth substrate 110 And the growth substrate 110 is removed through laser lift-off (LLO), wet etching, or the like.

When the upper surface of the first semiconductor layer 121 is exposed by performing a patterning and etching process so that the first semiconductor layer 121 may be exposed at a predetermined interval on the second semiconductor layer 123, A second electrode 130 is formed on the upper surface of the layer 123 and a first electrode 140 is formed on the exposed part of the first semiconductor layer 121, A first electrode connection terminal 141 and a second electrode connection terminal 131 connected to the second electrode 130 are provided.

The first and second electrodes 130 and 140 are made of one or more materials or alloys selected from the group consisting of ITO, InO 2, SnO 2, Ni, Au, Pd, Ag, Pt and Ti.

The protection layer 150 prevents a short between the first electrode 140 and the second electrode 130, the first electrode connection terminal 141 and the second electrode connection terminal 131, At least one material selected from among SiO2, Si3N4 and Resin resins may be formed through SOG (Spin on Glass) so that the emitted light may be reflected upwardly, and at least one material selected from the group consisting of Ni, Ti, Pt, Pd, Cu , CuW, Mo, MoW, and Ag.

The metal bonding layer 160 is formed on the protective layer 150 to bond the LED module 100b to the support substrate 200. The metal bonding layer 160 is formed of Au, AuSn, PdIn, InSn, NiSn, The supporting substrate 200 is bonded to the supporting substrate 200 by eutectic bonding to remove the growth substrate 110 from the LED module 100b, So that cracks or breakage of the epitaxial structure 120 can be prevented from occurring.

The bonding separation layer 161 is formed of a material such as Cr and Ti and is disposed between the protective layer 150 and the metal bonding layer 160 so that the LED module 100b is transferred to the carrier substrate 300, The metal bonding layer 160 can be removed by removing the metal bonding layer 160. [

The support substrate 200 adheres to the LED module 100b and prevents bowing of the epitaxial structure 120 when the growth substrate 110 is removed from the LED module 100b, And the LED module 100b is separated from the LED module 100b by the light having a certain wavelength range after the LED module 100b is separated into individual chips, And includes a support substrate main body 210, a passivation layer 220, an ultraviolet absorbing layer 230, and a metal bonding layer 240.

Next, a method of transferring the LED structure according to the third embodiment will be described.

The LED module 100b grows an epitaxial structure 120 on which a first semiconductor layer 121, an active layer 122 and a second semiconductor layer 123 are successively formed on a growth substrate 110, A first electrode 140 and a second electrode 140 are formed on the mesa-etched first and second semiconductor layers 121 and 123. The mesa-etched first semiconductor layer 121 and the second semiconductor layer 123 are etched to expose the semiconductor layer 121, Thereby allowing the electrode 130 to be deposited.

A first electrode connection terminal 141 is formed on the first electrode 140 and a second electrode connection terminal 131 is formed on the second electrode 130. The epitaxial structure 120, A protective layer 150 for protecting the electrode 140, the first electrode connection terminal 141, the second electrode 130 and the second electrode connection terminal 131 is formed. On the protective layer 150, A metal bonding layer 160 is formed for adhesion with the substrate 200.

A bonding separation layer 161 made of Cr, Ti or the like is formed between the protective layer 150 and the metal bonding layer 160 to remove the metal bonding layer 160.

When the LED module 100b is bonded to the metal bonding layer 240 of the support substrate 200 through the metal bonding layer 160, the growth substrate 110 is removed from the LED module 100b, (120).

The bonding between the LED module 100b and the support substrate 200 may be performed at a room temperature and may be performed under a predetermined pressure so as to increase the adhesion between the LED module 100b and the support substrate 200 .

The LED module 100b separated into individual units is positioned below the LED module 100b so that the carrier substrate 300 can be transferred from the supporting substrate 200 to the carrier substrate 300, 200).

When the adhesion between the LED module 100b and the supporting substrate 200 is weakened by the ultraviolet rays, the bonded LED module 100b is separated from the supporting substrate 200 into the carrier substrate 300 And the carrier substrate 300 is bonded to the LED module 100b so as to be transferred.

The LED module 100b transferred to the carrier substrate 300 may be etched to remove the metal bonding layer 160 and the first electrode connection terminal 141 and the second electrode Etching may be performed so that the connection terminal 131 is exposed.

Therefore, the LED module can be easily transferred to another substrate by attaching the LED module to the support substrate and separating the LED module using a passivation layer having a weak adhesive force with the ultraviolet absorbing layer.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims. It can be understood that

In the course of the description of the embodiments of the present invention, the thicknesses of the lines and the sizes of the components shown in the drawings may be exaggerated for clarity and convenience of explanation, , Which may vary depending on the intentions or customs of the user, the operator, and the interpretation of such terms should be based on the contents throughout this specification.

100, 100a, 100b: LED module
110: growth substrate 120: epitaxial structure
121: first semiconductor layer 122: active layer
123: second semiconductor layer 130: second electrode
130a: second electrode pad 131: second electrode connection terminal
140: first electrode 141: first electrode connection terminal
150: protective layer 160: metal bonding layer
161: bonding separation layer 170: chip separation etching region
180: metal etching area 200: supporting substrate
210: Support substrate body 220: Passivation layer
230: ultraviolet absorbing layer 240: metal bonding layer
300: Carrier substrate 310: Carrier substrate body
320: carrier substrate adhesive layer

Claims (16)

A plurality of LED modules 100, 100a, and 100b having a metal bonding layer 160 adhered to the support substrate 200 may have an ultraviolet absorbing layer 230 having an adhesive strength weakened when light in a certain wavelength range is absorbed, Bonded to a supporting substrate 200 having a metal bonding layer 240 adhered to the metal bonding layer 160 of the supporting substrate 100, 100a, 100b, and when light of a certain wavelength range is irradiated to the supporting substrate 200 The adhesive force of the ultraviolet absorbing layer 230 is reduced so that the LED modules 100, 100a and 100b are separated from the support substrate 200 together with the metal bonding layer 240 of the support substrate 200, LED structure.
The method according to claim 1,
Wherein the LED modules 100, 100a and 100b are bonded to the support substrate 200 through eutectic bonding through a metal bonding layer 160. [
3. The method of claim 2,
Wherein the LED module (100, 100a, 100b) is one of a horizontal structure, a vertical structure, and a flip structure.
The method of claim 3,
The LED modules 100, 100a and 100b include an epitaxial structure 120 from which the growth substrate 110 is removed, a first electrode 140, a second electrode 130 and a protective layer 150 .
5. The method of claim 4,
Wherein the second electrode comprises at least one material selected from the group consisting of ITO, InO ₂ , SnO ₂ , Ni, Au, Pd, Ag, Pt and Ti.
6. The method of claim 5,
Wherein the metal bonding layer 160 comprises at least one of Au, AuSn, PdIn, InSn, NiSn, and Au-Au. 6. The method of claim 5,
Wherein the LED module further comprises a bonding separation layer between the passivation layer and the metal bonding layer.
The method according to claim 1,
The supporting substrate 200 includes a supporting substrate main body 210;
A passivation layer 220 formed on the support substrate body 210;
An ultraviolet absorbing layer 230 formed on the passivation layer 220; And
And a metal bonding layer (240) formed on the ultraviolet absorbing layer (230).
9. The method of claim 8,
Wherein the supporting substrate main body 210 is a rigid transparent substrate that is rigidly rigid to prevent bowing.
10. The method of claim 9,
Wherein the support substrate main body 210 is made of one of Si, GaAs, glass, sapphire, and plastic.
9. The method of claim 8,
Wherein the passivation layer 220 comprises at least one of SiO ₂ , SiN x, and Al ₂ O ₃ .
9. The method of claim 8,
Wherein the ultraviolet absorbing layer (230) absorbs ultraviolet light in a range of 190 nm to 280 nm.
A method of manufacturing an LED module (100, 100a, 100b) comprising: forming an epitaxial structure (120) on a growth substrate (110) and forming at least one of a first electrode (140) , 100b);
b) forming a metal bonding layer (160) on the LED module (100, 100a, 100b);
c) an ultraviolet absorbing layer 230 having a weak adhesive strength when light of a certain wavelength is absorbed and a metal bonding layer 240 adhered to the metal bonding layer 160 of the LED module 100, 100a, 100b Bonding the LED modules (100, 100a, 100b) to the supporting substrate (200);
d) removing the growth substrate (110) from the LED modules (100, 100a, 100b) and separating the growth substrate (110) into individual epitaxial structures (120); And
e) When the adhesive strength of the ultraviolet absorbing layer 230 is reduced by irradiating the ultraviolet absorbing layer 230 with light in a certain wavelength range, the LED module 100 bonded together with the metal bonding layer 240 of the supporting substrate 200 100a, 100b are transferred to the carrier substrate 300 from the supporting substrate 200. In the method of transferring the LED structure,
14. The method of claim 13,
The step b) includes a protective layer 150 for protecting the epi-structured body 120 and the second electrode 130 and a bonding separation layer 161 formed between the protective layer 150 and the metal bonding layer 160 The method further comprising the step of:
15. The method of claim 14,
The LED module 100, 100a, 100b transferred to the carrier substrate 300 may further include a step of removing the metal bonding layer 160 through the bonding separation layer 161. [ .
14. The method of claim 13,
Wherein the step of separating the epi-structure 120 of step d) includes removing the metal bonding layer 160.

Images