KR101867873B1 - Method for preparing organic semiconductor thin film and method for fabricating organic field-effect transistor comprising the same - Google Patents

Abstract

(A) preparing an organic semiconductor solution in which the number of crystal nuclei of the organic semiconductor is controlled by preparing an organic semiconductor solution in which an organic semiconductor is dissolved and adjusting a time for stirring the organic semiconductor solution; (b) coating an organic semiconductor solution having a controlled number of crystal nuclei on a substrate to prepare an organic semiconductor solution / substrate; And (c) crystallizing the organic semiconductor of the organic semiconductor solution by bringing the organic semiconductor solution of the organic semiconductor solution / substrate into contact with the vapor of the solvent and evaporating the solvent of the organic semiconductor solution, thereby forming a plurality of A method of manufacturing an organic semiconductor thin film, comprising the steps of: preparing an organic semiconductor thin film including an aggregation crystal in which crystal grains are mutually formed; Wherein the grain size of the organic field effect transistor is controlled. The method for preparing an organic semiconductor thin film according to the present invention can control the grain size of the organic semiconductor thin film by controlling the agitation time of the organic semiconductor solution by controlling the agitation time of the organic semiconductor solution, and applying the solution process. Further, it is possible to provide an organic field effect transistor in which field effect mobility is improved by applying an organic semiconductor thin film having a large crystal grain size.

Description

TECHNICAL FIELD The present invention relates to a method of manufacturing an organic semiconductor thin film, and a method of manufacturing an organic field effect transistor including the organic thin film. [0001] The present invention relates to a method of manufacturing an organic semiconductor thin film,

The present invention relates to a method of manufacturing an organic semiconductor thin film and a method of manufacturing an organic field effect transistor including the same. More particularly, the present invention relates to an organic semiconductor thin film capable of controlling the number of organic semiconductors, And a method of manufacturing an organic field effect transistor including the same.

In recent 10 years, development of organic materials with semiconducting properties and various application studies using them have been actively conducted. Applications of organic semiconductors such as electromagnetic wave shielding films, capacitors, organic electroluminescence displays, organic thin film transistors, organic solar cells, and memory devices using multiphoton absorption phenomena have continued It is expanding. In particular, the organic EL field has become part of the commercialization, thereby serving as a catalyst for activating application research using organic materials in the field of electronics. Organic thin film transistors using organic materials are expected to be applied to next generation smart cards and the like as well as to be used for active driving devices for organic EL. In addition, since flexible electronic circuit boards are expected to become important element technologies for future industries, development of organic thin film transistors capable of meeting these demands is becoming an important research field. Organic thin film transistors can not be used for high-speed devices such as silicon (Si) or germanium (Ge) because of their low charge mobility due to the nature of organic semiconductors. However, they are used when devices are manufactured over a large area, Organic thin film transistors can be useful, especially since low cost processes are possible. The organic thin film transistor implemented on a plastic substrate can be applied to driving a bendable liquid crystal display device or an electronic paper and an organic light emitting device which have recently attracted great interest. In particular, recently developed electronic paper is a display device which does not require a high charge mobility and a high speed switching speed due to voltage driving, and is an advantageous technology to be applied to a large area capable of bending, so that the application of the organic thin film transistor is very high. The optimal organic thin film transistor is superior to the amorphous silicon (a-Si: H) device.

It is reported that pentacene has the largest mobility value (2.1 cm 2 / V · sec) among organic semiconductor materials and has an on / off current ratio of about 10 ⁸ . The blink rate is one of the most important characteristics in a pixel-address device in an active matrix display. Therefore, the application value of the organic thin film transistor using pentacene is very high. However, since pentacene itself is a low-solubility organic material, it is mainly used in organic thin film transistors through a dry process such as vacuum deposition. In addition to the dry process, there are wet (solution) processes for depositing organic materials, and since the solution process does not use vacuum equipment, the process cost can be lowered and a large area process can be performed. In particular, Since the organic thin film transistor can be applied to an organic thin film transistor through a solution process, the use value of the organic thin film transistor can be very high.

In 2001, Anthony and colleagues at the University of Kentucky synthesized TIPS-pentacene, a relatively stable material with excellent solubility and crystallinity. In 2007, Jackson et al. Of Pen - State University produced an excellent device with a surface roughness of 1.2 ㎠ / Vsec and a blinking ratio of about 10 ⁸ . However, in the case of the tip-pentacene, there is a disadvantage that preprocessing of the substrate is necessarily required for the excellent characteristics due to the characteristics of the material, and a large cost is paid to the foreign patentee in order to use it. In addition, in the case of most solution-process low-molecular organic semiconductors such as the tip-pentacene, there is a lot of disagreement about the influence of the grain boundaries on the charge mobility. Particularly, It was not presented.

Therefore, there is a need to develop a technique capable of controlling the size and grain size of a material having a higher field effect mobility and which can be applied to a solution process with better crystallinity and solubility.

SUMMARY OF THE INVENTION The object of the present invention is to solve the above-mentioned problems, and an object of the present invention is to provide an organic semiconductor thin film which can control the crystal grain size of the organic semiconductor thin film by controlling the agitation time of the organic semiconductor solution, And a method for producing the same.

Another object of the present invention is to provide an organic field effect transistor having an improved field effect mobility by applying an organic semiconductor thin film having a large crystal grain size.

According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: (a) adjusting an aggregation number of organic semiconductors by controlling a time for stirring an organic semiconductor solution; (b) coating the result of step (a) on a substrate to produce a substrate coated with an organic semiconductor; And (c) contacting the substrate coated with the organic semiconductor with a vapor of a solvent to produce an organic semiconductor thin film.

The grain size of the organic semiconductor thin film can be controlled by adjusting the number of aggregations.

The stirring time of step (a) can be from 1 minute to 24 hours.

The stirring time of step (a) can be from 1 minute to 15 hours.

The stirring time of step (a) can be from 3 minutes to 13 hours.

Stirring of step (a) can be carried out under dark conditions of anoxic.

The organic semiconductor may be at least one selected from triethylsilylethynyl anthradithiophene (TES-ADT), poly (3-hexylthiophene), TIPS-Pentacene, F8T2, PTCDI and PQT12.

The organic semiconductor may be triethylsilylethynyl anthradithiophene (TES-ADT).

The solvent of the organic semiconductor solution may be at least one selected from toluene, benzene, dichloromethane, chlorobenzene, chloroform and dichloroethane.

The solvent of the organic semiconductor solution may be toluene.

The solvent of step (c) may be at least one selected from the group consisting of 1,2-dichloroethane, toluene, benzene, dichloromethane, chlorobenzene and chloroform.

The solvent may be 1,2-dichloroethane.

(B-1) coating the polymer having a hydroxy group on the substrate to form a polymer brush before the step (b).

The polymer may be at least one selected from polystyrene, polymethyl methacrylate, and polyethylene oxide.

The polymer may be polystyrene.

According to another aspect of the present invention, there is provided a method of manufacturing an organic field effect transistor including a method of manufacturing the organic semiconductor thin film.

The method of the present invention can control the grain size of the organic semiconductor thin film by controlling the agglomeration number of the organic semiconductor by adjusting the agitation time of the organic semiconductor solution and applying the solution process .

Further, it is possible to provide an organic field effect transistor in which field effect mobility is improved by applying an organic semiconductor thin film having a large crystal grain size.

1 is an optical microscope photograph of an organic semiconductor thin film produced according to Examples 1 to 3 and Comparative Examples 1 to 3.
FIG. 2 is a polarized-light microphotograph after exposing the organic semiconductor thin film prepared according to Comparative Example 1 to DCE vapor. FIG.
FIG. 3 shows the results of measurement of transfer characteristics of the organic field effect transistor according to Comparative Examples 1 to 3.
4 shows the results of measurement of the electrical characteristics of the organic field effect transistor manufactured according to the device embodiments 4 to 6. FIG.
5 shows the results of measurement of the electrical characteristics of the organic field effect transistor manufactured according to the device embodiments 1 to 3.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention.

However, the following description does not limit the present invention to specific embodiments. In the following description of the present invention, detailed description of related arts will be omitted if it is determined that the gist of the present invention may be blurred .

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises ", or" having ", and the like, specify that the presence of stated features, integers, steps, operations, elements, or combinations thereof, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, or combinations thereof.

Hereinafter, a method of manufacturing the organic semiconductor thin film of the present invention will be described in detail. However, it should be understood that the present invention is not limited thereto, and the present invention is only defined by the scope of the following claims.

First, the number of aggregations of the organic semiconductor is controlled by adjusting the time for stirring the organic semiconductor solution (step a).

The grain size of the organic semiconductor thin film can be controlled by adjusting the number of aggregations. The larger the grain size, the more the field effect mobility can be improved when applied to the organic field effect transistor.

The stirring time may be from 1 minute to 24 hours, preferably from 1 minute to 15 hours, more preferably from 3 minutes to 13 hours. However, as the stirring time is minimized, The particle size can be increased. Therefore, the stirring time may be more preferably 3 minutes to 10 minutes.

The stirring is preferably carried out under an oxygen-free dark condition, and stirring in an oxygen-free dark condition may be preferable because aggregation of organic semiconductor molecules and degradation that generates impurities are not caused.

The organic semiconductor may be triethylsilylethynyl anthradithiophene (TES-ADT), poly (3-hexylthiophene), TIPS-pentacene, F8T2, PTCDI, PQT12, And triethylsilylethynyl anthradithiophene (TES-ADT).

The solvent of the organic semiconductor solution may be toluene, benzene, dichloromethane, chlorobenzene, chloroform, dichloroethane and the like, preferably toluene.

Next, the result of step (a) is coated on a substrate to prepare a substrate coated with an organic semiconductor (step b).

In some cases, the method may further include a step (b-1) of forming a polymer brush by coating a polymer having a hydroxy group on the substrate before the coating.

When the polymer brush is formed on the substrate, a trapping site existing at an interface between the substrate and the organic semiconductor can be removed. If the organic semiconductor thin film having the polymer brush formed thereon is applied to the organic field effect transistor, the field effect mobility can be improved.

The polymer may be polystyrene, polymethyl methacrylate, polyethylene oxide or the like, preferably polystyrene.

Finally, the substrate coated with the organic semiconductor is brought into contact with the vapor of the solvent to prepare an organic semiconductor thin film (step c).

The solvent may be 1,2-dichloroethane, toluene, benzene, dichloromethane, chlorobenzene, chloroform and the like, preferably 1,2-dichloroethane.

When the substrate coated with the organic semiconductor contacts the vapor of the solvent, the organic semiconductor begins to crystallize. The crystal grain size of the crystallized organic semiconductor thin film can be controlled according to the number of aggregations described above. The smaller the number of aggregations, the larger the crystal grain size can be.

In addition, the present invention can provide a method of manufacturing an organic field effect transistor including the method of manufacturing the organic semiconductor thin film.

[Example]

Hereinafter, preferred embodiments of the present invention will be described. However, this is for illustrative purposes only, and thus the scope of the present invention is not limited thereto.

Example  1: Manufacture of organic semiconductor thin film

Silicon wafers (Fine Science) with SiO ₂ of 300 nm were cleaned by sonication in acetone and isopropyl alcohol for 20 minutes continuously. Next, the silicon wafer was rinsed with deionized water, dried in a nitrogen gas, and exposed to ultraviolet rays for 10 minutes.

ADT solution was prepared by dissolving triethylsilylethynyl anthradithiophene (TES-ADT) in toluene to prepare a 1.5 wt% TES-ADT solution. The TES-ADT solution was heated at 500 rpm for 5 minutes Lt; / RTI > The TES-ADT solution was spin-coated on the silicon wafer at 1,000 rpm for 60 seconds and immediately transferred to a hot plate of 90 to remove residual solvent to prepare an organic semiconductor thin film.

The organic semiconductor thin film was placed in a petri dish made of DCE (1,2-dichloroethane, Aldrich Chemical Co.) solvent, and was made into a crystalline state by exposure to DCE vapor, followed by drying in a vacuum oven.

Example  2: Manufacture of organic semiconductor thin film

An organic semiconductor thin film was prepared in the same manner as in Example 1, except that the TES-ADT solution was stirred for 1 hour instead of 5 minutes.

Example  3: Manufacture of organic semiconductor thin film

An organic semiconductor thin film was prepared in the same manner as in Example 1, except that the TES-ADT solution was stirred for 12 hours instead of stirring for 5 minutes.

Example  4: Manufacture of organic semiconductor thin film

An organic semiconductor thin film was prepared in the same manner as in Example 1, except that a silicone wafer grafted with a PS brush was used instead of the silicon wafer.

For the production of silicon wafers is the PS brush the grafting, first _{PS-Si (CH 3) 2} Cl (dimethyl chlorosilane-terminated polystyrene, M w = 8,000, PDI = 1.06, Polymer Source) PS brush toluene (Aldrich Chemical Co ) For 5 minutes to prepare a 0.3 wt% PS brush solution. The PS brush solution was spin-coated on the silicon wafer under ambient air at 1,000 rpm for 30 seconds and heat-treated at 120 for 30 seconds to prepare a silicon wafer grafted with a PS brush. The silicon wafer to which the PS brush was grafted was sonicated in a toluene bath for 30 seconds to remove unreacted PS brushes and dried in nitrogen gas.

Example  5: Manufacture of organic semiconductor thin film

An organic semiconductor thin film was prepared in the same manner as in Example 2, except that a silicon wafer grafted with a PS brush was used instead of the silicon wafer.

Example  6: Manufacture of organic semiconductor thin film

An organic semiconductor thin film was prepared in the same manner as in Example 3, except that a silicone wafer grafted with a PS brush was used instead of the silicon wafer.

Comparative Example  1: Manufacture of organic semiconductor thin film

An organic semiconductor thin film was prepared in the same manner as in Example 1, except that it was not exposed to DCE vapor.

Comparative Example  2: Manufacture of organic semiconductor thin film

An organic semiconductor thin film was prepared in the same manner as in Example 2, except that it was not exposed to DCE vapor.

Comparative Example  3: Manufacture of organic semiconductor thin film

An organic semiconductor thin film was prepared in the same manner as in Example 3, except that it was not exposed to DCE vapor.

device Example  One: Organic field effect  Manufacture of transistors

A gold source-drain electrode (channel length: 150 μm, channel width: 1,500 μm) was thermally deposited on the organic semiconductor thin film according to Example 1 using a shadow mask to produce an organic field effect transistor.

device Example  2: Organic field effect  Manufacture of transistors

An organic field effect transistor was fabricated in the same manner as in Example 1 except that the organic semiconductor thin film prepared in Example 2 was used instead of the organic semiconductor thin film prepared in Example 1.

device Example  3: Organic field effect  Manufacture of transistors

An organic field effect transistor was fabricated in the same manner as in Example 1 except that the organic semiconductor thin film prepared in Example 3 was used instead of the organic semiconductor thin film prepared in Example 1.

device Example  4: Organic field effect  Manufacture of transistors

An organic field effect transistor was fabricated in the same manner as in Example 1 except that the organic semiconductor thin film prepared in Example 4 was used instead of the organic semiconductor thin film prepared in Example 1.

device Example  5: Organic field effect  Manufacture of transistors

An organic field effect transistor was fabricated in the same manner as in Example 1 except that the organic semiconductor thin film prepared in Example 5 was used instead of the organic semiconductor thin film prepared in Example 1.

device Example  6: Organic field effect  Manufacture of transistors

An organic field effect transistor was fabricated in the same manner as in Example 1, except that the organic semiconductor thin film prepared in Example 6 was used instead of the organic semiconductor thin film prepared in Example 1.

device Comparative Example  One: Organic field effect  Manufacture of transistors

An organic field effect transistor was fabricated in the same manner as in Example 1 except that the organic semiconductor thin film prepared according to Comparative Example 1 was used instead of the organic semiconductor thin film prepared according to Example 1.

device Comparative Example  2: Organic field effect  Manufacture of transistors

An organic field effect transistor was fabricated in the same manner as in Example 1 except that the organic semiconductor thin film prepared according to Comparative Example 2 was used instead of the organic semiconductor thin film prepared according to Example 1.

device Comparative Example  3: Organic field effect  Manufacture of transistors

An organic field effect transistor was fabricated in the same manner as in Example 1 except that an organic semiconductor thin film prepared according to Comparative Example 3 was used in place of the organic semiconductor thin film prepared according to Example 1.

[Test Example]

Test Example  1: Aggregation of organic semiconductor thin films and determination of crystal grain size

1 (a) to 1 (c) show optical microscopic results (a: Comparative Example 1, b: Comparative Example 2, c: Comparative Example 3) of the organic semiconductor thin film produced according to Comparative Examples 1 to 3, d to f show polarized optical microscopic analysis results (d: Example 1, e: Example 2, f: Example 3) of the organic semiconductor thin film produced according to Examples 1 to 3, G to i schematically show the molecular arrangement according to the difference of the grain boundaries of d to f in Fig.

1, the organic semiconductor thin film prepared according to Comparative Example 1, in which the stirring time of the TES-ADT solution is 5 minutes, is less than that of Comparative Example 3 in which the agitation time of the TES-ADT solution is 12 hours The organic semiconductor thin films thus fabricated showed relatively high aggregation. The organic semiconductor thin film of Example 1 in which the organic semiconductor thin film produced according to Comparative Example 1 was crystallized had a grain size of about 1.5 mm to 2 mm and crystallized the organic semiconductor thin film produced according to Comparative Example 3 The organic semiconductor thin film of Example 3 has a crystal grain size of about 600 mu m.

Therefore, it was found that as the agitation time of the TES-ADT solution was increased, the aggregation was increased and thus the grain size of the organic semiconductor thin film was decreased.

Test Example  2: Confirmation of crystallization process of organic semiconductor thin film

FIG. 2 is a polarized light micrograph of the organic semiconductor thin film prepared according to Comparative Example 3 at 40 seconds, 1 minute, 1 minute, 30 seconds, and 4 minutes after exposure to DCE vapor.

Referring to FIG. 2, spherulites of the organic semiconductor thin film are radically grown from the nucleation center, and when the organic thin film is exposed to the DCE vapor for 4 minutes, the organic semiconductor thin film is completely crystallized .

Therefore, it is judged that the crystallization progresses until the sphere crystal is influenced by the other sphere crystals, and the size of the spherical crystal is determined by the number of the center of the crystal nucleus. That is, the smaller the agitation time of the TES-ADT solution is, the smaller aggregation occurs, the number of centers of crystal nuclei is reduced, and the size of spherical crystals can be increased.

Test Example  3: Organic field effect  Check electrical characteristics of transistor

FIG. 3 shows transfer characteristics of the organic field effect transistor manufactured according to the device comparison examples 1 to 3. FIG. 4 (a) shows the transfer characteristic of the organic field effect transistor manufactured according to the device embodiments 4 to 6 FIG. 5A shows the relative threshold voltage shift (V _th ), FIG. 5B shows the relative threshold voltage shift (V _th ), and FIG. 5A shows the organic field effect FIG. 5B shows the transfer characteristics of the transistor, and FIG. 5B shows the transfer of the relative threshold voltage. Electrical characteristics of the organic field effect transistor manufactured according to the device embodiments 1 to 6 and the device comparison examples 1 to 3 are shown in Table 1 below.

division Agitation time of TES-ADT solution
(Mixing time) Mobility
(cm ² V ^-1 s ^-1 ) V _th (V) I _on / I _off Before DCE solvent treatment Device Comparative Example 1 5 mins 0.22 x 10 ^-2
± 0.0001 -10.66 1.0x10 ⁵ Device Comparative Example 2 1 hour 0.34 x 10 ^-2
± 0.0001 -12.67 1.0x10 ⁵ Device Comparative Example 3 12 hours 0.39 x 10 ^-2
± 0.0002 -11.13 1.0x10 ⁵ After DCE solvent treatment Device Example 4 5 mins 0.248 + 0.013 1.64 1.0 x 10 ⁶ Element Embodiment 5 1 hour 0.161 + 0.022 6.98 1.0 x 10 ⁶ Device Example 6 12 hours 0.139 + 0.010 2.50 1.0x10 ⁵ After PS brushing and DCE solvent treatment Device Embodiment 1 5 mins 0.913 + 0.124 0.01 1.0 x 10 ⁶ Device Example 2 1 hour 0.358 + 0.083 2.30 1.0 x 10 ⁶ Device Embodiment 3 12 hours 0.236 + 0.032 1.67 1.0x10 ⁵

Referring to FIGS. 3 to 5 and Table 1, the organic field effect transistor manufactured according to Comparative Examples 1 to 3, in which the DCE solvent treatment was not performed, showed an on-current level ) Were found to increase. Therefore, it was found that stirring under dark conditions of anoxic oxygen does not cause aggregation of TES-ADT molecules and degradation that generates impurities. It is considered that the field effect mobility increases as the stirring time of the TES-ADT solution increases in the device comparison example 3 in the device comparison example 1 because of crystallization due to agglomeration.

On the contrary, the field effect mobility decreases as the agitation time of the TES-ADT solution increases in the organic field effect transistor manufactured according to the device embodiments 4 to 6 because the agglomeration increases and the size of the spherical crystal decreases . In addition, the organic field effect transistor manufactured according to the device embodiments 4 to 6 has a field effect mobility increased about 100 times as compared with the organic field effect transistor manufactured according to the device comparison examples 1 to 3, It is judged that the organic semiconductor thin film is completely crystallized. Thus, it can be seen that the field effect mobility increases with increasing crystallinity and spherical crystal size of the organic semiconductor thin film.

As the agitation time of the TES-ADT solution is increased, the field effect mobility is decreased in the organic field effect transistor manufactured according to the first to third embodiments, which is similar to the organic field effect transistor manufactured according to the fourth to sixth embodiments The reason is judged. In addition, the organic field effect transistor manufactured according to the first embodiment of the present invention has a field effect mobility increased about 4 times as compared with the organic field effect transistor manufactured according to the fourth embodiment, and the organic field effect transistor manufactured according to the third embodiment The effect transistor showed about twice the field effect mobility as compared to the organic field effect transistor manufactured according to the device example 6. This is because PS brushing is performed on the silicon wafer to remove the trapping site such as the silanol group existing at the interface between the silicon wafer and the TES-ADT thin film. Further, since the grain boundary system is a trapping position, the voltage stability of the organic field effect transistor manufactured according to the first embodiment of the present invention having a large grain size is excellent.

Therefore, it was found that it is preferable to apply an organic semiconductor thin film which minimizes the agitation time of the TES-ADT solution by removing the trapping position by PS brushing the silicon wafer with the organic field effect transistor.

The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

Claims (14)

(a) preparing an organic semiconductor solution in which the number of crystal nuclei of the organic semiconductor is controlled by preparing an organic semiconductor solution in which an organic semiconductor is dissolved, and controlling a stirring time of the organic semiconductor solution;
(b) coating an organic semiconductor solution having a controlled number of crystal nuclei on a substrate to prepare an organic semiconductor solution / substrate; And
(c) evaporating a solvent of the organic semiconductor solution of the organic semiconductor solution / substrate to form the organic semiconductor on the substrate, crystallizing the organic semiconductor formed on the substrate to form a plurality of Preparing an organic semiconductor thin film including aggregation crystals in which crystal grains are mutually formed,
And adjusting the number of the crystal nuclei to adjust the grain size of the crystal grains contained in the aggregation crystals of the organic semiconductor thin film.
A method of manufacturing an organic field effect transistor. The method according to claim 1,
Wherein the stirring time of step (a) is from 1 minute to 24 hours. 3. The method of claim 2,
Wherein the stirring time of step (a) is from 1 minute to 15 hours. The method of claim 3,
Wherein the stirring time of step (a) is from 3 minutes to 13 hours. 5. The method of claim 4,
Wherein stirring of step (a) is carried out under dark conditions of anoxic oxygen. The method according to claim 1,
Wherein the organic semiconductor is at least one selected from triethylsilylethynyl anthradithiophene (TES-ADT), poly (3-hexylthiophene), TIPS-Pentacene, F8T2, PTCDI and PQT12 Gt; < / RTI > The method according to claim 6,
Wherein the organic semiconductor is triethylsilylethynyl anthradithiophene (TES-ADT). The method according to claim 1,
Wherein the solvent of the organic semiconductor solution is at least one selected from the group consisting of toluene, benzene, dichloromethane, chlorobenzene, chloroform and dichloroethane. 9. The method of claim 8,
Wherein the solvent of the organic semiconductor solution is toluene. The method according to claim 1,
In the step (c), crystallizing the organic semiconductor formed on the substrate crystallizes the organic semiconductor by bringing the organic semiconductor formed on the substrate into contact with the solvent vapor,
Wherein the solvent is at least one selected from the group consisting of 1,2-dichloroethane, toluene, benzene, dichloromethane, chlorobenzene and chloroform. 11. The method of claim 10,
Wherein the solvent is dichloroethane (1,2-dichloroethane). The method according to claim 1,
Further comprising the step of (b-1) coating a polymer having a hydroxy group on the substrate to form a polymer brush before the step (b). 13. The method of claim 12,
Wherein the polymer is at least one selected from the group consisting of polystyrene, polymethyl methacrylate, and polyethylene oxide. 14. The method of claim 13,
Wherein the polymer is polystyrene.

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