KR101867507B1 - Acid-resistant catalyst for decomposing perfluorinated compounds and use thereof - Google Patents

Abstract

The present invention relates to a process for the preparation of zirconia (ZrO ₂ ) or zirconia sol from raw materials selected from the group consisting of aluminum trihydroxide, boehmite and pseudo-boehmite, (Zn) supported on an alumina and zirconia mixed catalyst support, comprising an alumina and zirconia mixed catalyst support prepared by drying and firing an alumina and zirconia mixed catalyst support. The catalyst for decomposing a perfluorinated compound according to the present invention is an acid-resistant catalyst having durability against fluorine generated by decomposition of a halogen acid gas or a perfluorinated compound contained in a perfluorinated compound, and can increase the reaction activity. Therefore, for the purpose of decomposition of the semiconductor manufacturing processes and cleaning agents and etchants in the perfluorinated compounds to be used in display manufacturing process used is possible, in particular, F _2, Cl _2, discharged from the process using a halogen acid gas, such as Br ₂ Which can be used as a catalyst for decomposing perfluorinated compounds.

Description

Acid-resistant catalysts for decomposing perfluorinated compounds and their use {Acid-resistant catalysts for decomposing perfluorinated compounds and use thereof}

The present invention relates to an acid-resistant catalyst capable of decomposing a perfluorinated compound, and a production method and use thereof.

The harmful waste gas emitted from the semiconductor manufacturing process is discharged in a very wide variety depending on each process. Most of the harmful waste gas is volatile and is harmful to the human body or has a high global warming index. Among them, perfluorocompound (PFC), which is a perfluorocompound which is mainly discharged in the etching and CVD (chemical vapor deposition) process of a semiconductor process, is very stable and is not easy to remove. PFCs are more stable than CFCs (chlorofluorocompounds) used as refrigerants, and have a problem of not only being large in global warming index but also having a very long decomposition time and accumulating in the atmosphere when they are released. PFC emissions from semiconductor processes are increasing at an increasing rate each year. As the impact of PFC on global warming is increasing, countries are gradually strengthening regulations on PFC.

There has been an attempt to develop a new alternative gas to reduce PFC emissions, but there has been no alternative gas that is more efficient and more productive than CF ₄ as a gas used to etch silicon substrates during the semiconductor manufacturing process. As a result, CF ₄ is being used in most semiconductor manufacturing processes.

Several technologies for removing PFCs, especially carbon-based PFCs, are being developed, including PSA and membrane separation and recovery, and decomposition and removal using plasma, combustion, or catalysis.

Catalytic cracking is a technique to decompose poorly decomposing PFC at a low temperature of 800 ° C or lower using catalyst and water vapor. Catalytic cracking can significantly lower the decomposition temperature, resulting in many advantages. For example, decomposition at a temperature as low as 800 ° C or less suppresses the advantages of easy operation cost reduction and system durability, and the generation of thermal NO _x due to N ₂ present in the exhaust gas And has the advantage of significantly reducing device corrosion. On the other hand, since the reaction activity of the catalyst is increased, the size of the scrubber can be largely reduced and the size can be reduced.

However, in the catalytic cracking method, since halogen compounds such as HF and F ₂ produced after the reaction rapidly degrade the performance of the catalyst, there is a problem that the catalyst must be periodically replaced. In order to solve this problem, Various studies have been carried out, such as bringing the catalyst into contact with water vapor and returning it to the original catalyst state, or forming a film on the catalyst surface.

Japanese Unexamined Patent Application, First Publication No. Hei 11-70332 and Hei 10-46824 disclose a process for producing a catalyst in the form of a composite oxide of a metal component containing aluminum and at least one transition metal such as Zn, Ni, Ti, Fe, Disclose that perfluorinated compounds can be decomposed, and U.S. Patent Nos. 6,023,007 and 6,162,957 disclose that various types of metal phosphate catalysts can be used as catalysts for decomposing perfluorinated compounds. However, as described above, the aluminum phosphate in the form of a multi-component complex oxide in which a metal component is separately added is not only complicated but also disadvantageous in terms of economy and durability for a long period of time. Thus, durability There is a continuing need to develop a method capable of easily and economically producing a catalyst having a high catalytic activity.

The present invention relates to a process for producing a halogen-containing compound capable of completely decomposing a perfluorinated compound containing a halogen compound, which is an acid gas, as a by-product after being used in a semiconductor manufacturing process or a display manufacturing process such as an LCD, And to provide a catalyst for decomposing a compound.

A first aspect of the present invention is aluminum tri hydroxide (aluminum trihydroxide), boehmite (boehmite) and uibo boehmite water to the selected raw material and a zirconia (ZrO ₂₎ or zirconia sol from the group consisting of (pseudo-boehmite) in the There is provided a catalyst for decomposing a perfluorinated compound comprising an alumina and zirconia mixed catalyst support comprising Al: Zr (mass) = 100: 0.01 to 50, which is prepared by mixing, drying and firing in a solvent containing an alumina and a zirconia.

A second aspect of the present invention is a process for producing a zirconium-zirconium-zirconium-zirconium-zirconium-zirconium-zirconium-zirconium-zirconium-zirconium-zirconium-zirconium-zirconium-zirconium-zirconium-zirconium-zirconium-zirconium- (Step 1); And a step (step 2) of producing a Zr-alumina oxide having Al: Zr (mass) = 100: 0.01 to 50 by drying and firing do.

A third aspect of the present invention provides a method for treating a perfluorinated compound, which comprises decomposing a perfluorinated compound in a gas containing a perfluorinated compound, using the catalyst for decomposing the perfluorinated compound of the first aspect.

A fourth aspect of the present invention provides a semiconductor manufacturing process or a display manufacturing process characterized by comprising decomposing a perfluorinated compound in a gas containing a perfluorinated compound using the catalyst for decomposing the perfluorinated compound of the first aspect .

Hereinafter, the present invention will be described in detail.

The term "perfluoro compound" (PFC) includes carbon-containing perfluoro compounds (PFCs) containing two or more fluorine (F), nitrogen-containing perfluoro compounds (PFC) containing perfluoro compound. The carbon-containing PFC include _{CF 4, CHF 3, CH 2} F 2, C 2 F 4, C 2 F 6, C 3 F 6, C 3 F 8, C 4 F 8, saturated and unsaturated aliphatic, such as C ₄ F ₁₀ aliphatic components as well as cyclic aliphatic and aromatic perfluorocarbons. Nitrogen-containing PFCs may include NF ₃ , and sulfur-containing PFCs may include SF ₄ , SF _6, and the like. However, the perfluorinated compounds (PFC) herein can be extended to compounds capable of decomposing by a catalyst to form gaseous products such as HF, which also falls within the scope of the present invention.

The acid gas is an acidic gas when it comes into contact with water, and examples thereof include halogen, hydrogen halide, NOx, sulfur oxides, acetic acid, hydrogen sulfide, hydrogen sulfide, and carbon dioxide. The acid gas not only causes corrosion but also can reduce the activity of the catalyst.

The hydrolysis reaction between PFC and moisture is an endothermic reaction, and PFC decomposition proceeds rapidly because higher temperatures can induce spontaneous reactions that are easier to decompose. However, high temperatures degrade the thermal stability of the catalyst.

That is, the operation conditions of 500 to 800 ° C are the highest obstacle to maintaining the durability of the catalyst as a high temperature condition for maintaining the catalyst for a long time without physical or chemical change. In particular, the development of a catalyst having durability in a reaction atmosphere of 500 to 800 ° C. in which HF and water vapor generated as by-products are present at the same time is the key to commercialization.

On the other hand, the impregnation method, which is a kind of a supported catalyst production method, is a method in which a carrier is immersed in an aqueous solution containing an active ingredient to support the active ingredient on the carrier surface. When the active catalyst is dispersed in the carrier, the catalyst can be stabilized by preventing sintering of the active catalyst.

It is preferable to highly disperse the active ingredient in order to increase the resistance to a halogen acid gas, but the technique of highly dispersing the active ingredient is not easy, and as a result, the degradation activity is lowered. Therefore, in order to solve such problems, the catalyst for decomposing perfluorinated compounds according to the present invention is not limited to Zr and / or other active metals supported on alumina by the coprecipitation method, but may contain Al: Zr (mass) 50, and it is a feature of the present invention that a porous catalyst support having alumina and zirconia uniformly mixed therein is prepared so as to have a specific surface area of 50 to 50, and an active metal such as zinc (Zn) to be. At this time, an aqueous solution in which zirconia or zirconia sol is dissolved in preparing the catalyst support is mixed with an alumina precursor selected from the group consisting of aluminum trihydroxide, boehmite and pseudo-boehmite .

Accordingly, the catalyst for decomposing perfluorinated compounds according to the present invention is a catalyst for decomposing perfluorinated compounds, which comprises a raw material selected from the group consisting of aluminum trihydroxide, boehmite and pseudo-boehmite, zirconia (ZrO ₂ Zirconia mixed catalyst support having Al: Zr (mass) = 100: 0.01 to 50, which is prepared by mixing, drying and firing a zirconia sol or a zirconia sol in a water-containing solvent.

Most of the catalysts applicable in catalytic cracking of perfluorinated compounds are solid acid catalysts, among which Al ₂ O ₃ catalysts are the most widely used. Therefore, in the catalyst for decomposing perfluorinated compounds according to the present invention, alumina serves not only as a support to be supported on an active metal but also as a main catalyst having a perfluorinated compound decomposing activity. From the viewpoint of catalytic activity, γ-alumina in α, γ, δ-alumina is preferable. Further, if the transfer of? -Alumina to the? -Phase can be suppressed, a high resolution for PFC can be maintained for a long time.

It is preferred to use alumina precursors selected from the group consisting of aluminum trihydroxide, boehmite and pseudo-boehmite in the preparation of the catalyst support.

It is preferable that the alumina and zirconia-containing catalyst supports have a specific surface area of 20 m ² / g or more to maintain a high decomposition activity.

Zirconia can stabilize alumina. As shown in Table 2, it is preferable that zirconia is mixed in the alumina precursor-containing aqueous solution during the production of the alumina catalyst support by calcination from the alumina precursor in view of the catalyst durability against HF generated during the PFC catalytic cracking reaction (Examples 1 - 3, Comparative Example 1, and Comparative Example 2), it is preferable that zinc (Zn) be supported by impregnation on a zirconia / alumina catalyst support prepared rather than being mixed in preparing the alumina catalyst support (Examples 1 to 3 Example 2). When Zr and Zn were applied simultaneously, the alpha phase did not change, but the durability decreased as the catalyst crystallinity increased. On the other hand, when the metal material such as Zn was applied to the Zr-alumina oxide as in Example 3, the change in crystallinity of the post-reaction catalyst was small compared to the metal oxide catalyst (Example 2) (Examples 2 to 3, Fig. 1).

Meanwhile, the process for producing a catalyst for decomposing a perfluorinated compound according to the present invention comprises

Zirconia or zirconia sol with an alumina precursor selected from the group consisting of aluminum trihydroxide, boehmite and pseudo-boehmite (step 1);

(Step 2) of preparing a Zr-alumina oxide having Al: Zr (mass) = 100: 0.01 to 50 by filtration, followed by drying and firing.

Further, the method may further include wet impregnation, drying and calcination of the Zr-alumina oxide support with an active metal-containing aqueous solution (step 3).

The active metal may be selected from the group consisting of zinc, gallium, cerium, phosphorus, ruthenium, and cobalt. The active metal may include 0.01 to 20 parts by weight of active metal per 100 parts by weight of the catalyst support.

If zinc (Zn) is supported as an active metal, favorable results can be given in terms of improvement of catalytic efficiency with respect to HF generated in the PFC catalytic cracking reaction.

When ruthenium (Ru) is supported as an active metal, the resistance to halogen acid gas can be increased.

Phosphorus (P) as the active metal can increase the thermal stability of the catalyst and promote the hydrolysis reaction, but if not used excessively or highly dispersed, the catalyst activity is reduced. The -OH group generated by the P component existing on the surface of the catalyst and the Cat.-F formed on the catalyst surface react with each other to generate and discharge HF, so that F is not accumulated in the catalyst.

Cat. + HF Cat.-F

Cat.-F + H ₂ O Cat. + HF

(Cat. = PFC decomposition catalyst)

If cobalt (Co) is supported as an active metal, favorable results can be given in terms of catalytic activity.

If gallium is supported as the active metal, the decomposition efficiency of PFC gas can be increased.

The active metal may be supported on the catalyst support by a wet-incipient method.

The active metal precursor in the active metal-containing aqueous solution may be di-ammonium hydroxide ((NH ₄ ) ₂ HPO ₄ ), ammonium dihydrophosphate (NH ₄ H ₂ PO ₄ ), phosphoric acid (H ₃ PO ₄ ) And the precursor of the active metal other than phosphorus may be an acetylacetate, a chloride, a croiodide, a nitrosylnitrate, an oxide, or a mixture thereof of the metal.

Drying and firing can be carried out independently in steps 2 and 3 by primary drying in a constant temperature and humidity bath at 40 ° C, secondary drying at 100 ° C or higher, and firing in an air atmosphere at 400 to 800 ° C, followed by tertiary drying.

The final shape of the catalyst may be a granule such as a sphere, pellet or ring, or may be formed into a honeycomb shape or the like. As the catalyst forming method, an arbitrary method such as an extrusion molding method, a tablet molding method, and a power assembling method can be used. The catalyst of the present invention may be coated on a honeycomb or plate made of ceramic or metal.

Since the catalyst for decomposing perfluorinated compounds according to the present invention exhibits excellent decomposing effect and durability in decomposing and removing perfluorinated compounds containing halogen acid acid gas, it is possible to use a process containing a halogen acid gas, It can be used for decomposing a perfluorinated compound in a cleaning agent, an etching agent and a solvent used up to the site, and can be used for decomposing perfluorinated compounds discharged from a process using a halogen acidic gas such as F ₂ , Cl ₂ , Br ₂ , And can be usefully used to decompose and remove compounds.

The method for treating a perfluorinated compound according to the present invention may include decomposing a perfluorinated compound in a gas containing a perfluorinated compound, using a catalyst for decomposing the perfluorinated compound according to the present invention.

Further, the semiconductor manufacturing process or the display manufacturing process according to the present invention may include decomposing the perfluorinated compound in the gas containing the perfluorinated compound, using the catalyst for decomposing the perfluorinated compound according to the present invention.

The catalyst for decomposing CF ₄ can decompose most of the PFC contained in the waste gas and can convert the carbon forming the perfluorinated compound into CO ₂ and thus can be used mainly for the waste gas generated in the semiconductor process. , It can be usefully used in a process or a workplace where PFC is used or manufactured for the purpose of a cleaning agent, an etching agent, a solvent, a reaction material, or the like.

For example, in the PFC treatment process using the catalyst according to the present invention, the various gases discharged from the PFC collection duct are treated with acid gases through an alkali scrubber, and then the RCS (Regenerative Catalytic System) The PFC can be removed through a hydrolysis reaction represented by the following formula.

CF ₄ + 2H ₂ O? CO ₂ + 4HF

CHF ₃ + (1/2) O ₂ + H ₂ O? CO ₂ + 3HF

C ₂ F ₆ + 3H ₂ O + (1/2) O ₂ → 2CO ₂ + 6HF

SF ₆ + 3H ₂ O - > SO ₃ + 6HF

Acidic gases including hydrofluoric acid (HF) are removed through an acid gas scrubber and then discharged. However, hydrofluoric acid generated from hydrolysis not only causes serious corrosion problems in the downstream process including RCS, but also affects the activity of the PFC decomposition catalyst.

Therefore, the catalyst for decomposing perfluorinated compounds according to the present invention is particularly suitable for treating a gas containing a perchloric compound containing a halogen acid gas, because the catalyst is resistant to halogen acid gases.

In the present invention, the temperature for catalytic cracking of PFC is 500 to 800 ° C, preferably 600 to 750 ° C, and more preferably 600 to 700 ° C.

The catalyst according to the present invention can be used to form a bed in the catalytic reactor after it has been molded in the form of particles, spheres, pellets, rings or the like, which are prepared for decomposing and removing the perfluorinated compound in the waste gas, have. The catalyst layer formed in the catalytic reactor can be operated in the form of a packed bed (or fixed bed) or a fluidized bed.

Water may be introduced into the reactor from the outside to perform the hydrolysis reaction in the catalytic reactor. Water may be supplied through a separate source outside the reactor and may be heated and fed in the form of steam in the heat exchanger before entering the reactor. Preferably, pure water is used as the water to be supplied to the inside of the reactor, and the supply amount can be controlled in consideration of the hydrolysis reaction formula.

The water vapor contains a water / PFC molar ratio in the range of 1 to 100, and the PFC may be decomposed without deactivation of the catalyst by using 0 to 50% concentration of oxygen together with water vapor. If the content of water vapor is out of the above range, the reaction activity is decreased.

The catalyst for decomposing a perfluorinated compound according to the present invention is an acid-resistant catalyst having durability against fluorine generated by decomposition of a halogen acid gas or a perfluorinated compound contained in a perfluorinated compound, and can increase the reaction activity. Therefore, it can be used for the purpose of decomposing perfluorinated compounds in cleaning agents and etching agents used in the semiconductor manufacturing process and the display manufacturing process. In particular, it is possible to use a halogen acid gas such as F ₂ , Cl ₂ , Br ₂ , Which can be used as a catalyst for decomposing perfluorinated compounds.

1 is a graph showing changes in the crystal phase of the catalyst before and after the CF ₄ decomposition reaction using the catalysts of Examples 2 and 3.

Hereinafter, the present invention will be described in more detail with reference to Examples. These embodiments are only for describing the present invention more specifically, and the scope of the present invention is not limited by these examples.

Example  One. Zr / Alumina Oxide Catalyst Preparation

The solution in which zirconia was dissolved in distilled water was put into a stirrer together with 150 g of boehmite and mixed for 8 hours. After filtration, it was primarily dried at 40 DEG C and then secondarily dried at 110 DEG C for 8 hours. Subsequently, the resultant was calcined at 650 DEG C for 6 hours under a temperature elevation condition of 2 DEG C / min to prepare a Zr-alumina oxide. At this time, the amount of zirconium was applied at a weight ratio of 20% to boehmite used as a support.

Example  2. Zn / Zr / Alumina Oxide Catalyst Preparation

10 g of active metal Zr and 10 wt% of Zn were added to 100 g of distilled water, and 3 g of nitric acid was added to the solution. 150 g of boehmite was added to the dissolved mixture and stirred for 1 hour. After filtration, it was dried at 110 DEG C for 8 hours. And fired at 650 DEG C for 6 hours under a temperature elevation condition of 2 DEG C / min.

Example  3. Wet Impregnation  The applied Zn - Zr / Alumina Oxide Catalyst Preparation

Zr-alumina oxide was prepared in the same manner as in Example 1, except that the amount of Zr was 10 wt% instead of 20 wt%.

10 g of active metal Zn was added to 80 g of distilled water and completely dissolved. The mixed solution was applied to 100 g of the Zr-alumina oxide thus prepared three times. Followed by primary drying at 40 占 폚 and secondary drying at 110 占 폚 for 8 hours. After drying, the resultant was fired at 700 ° C for 6 hours under a temperature elevation condition of 2 ° C / min.

During the 48 hours, and in the case of Example 3 as shown in Figure 1 was less CF ₄ by the change of crystalline phase after decomposition catalyst in comparison with Example 2.

Comparative Example  1. Preparation of Alumina Catalyst

Nitric acid and phosphorus were added to 400 g of distilled water to prepare an acidic solution having a pH of 1, 500 g of boehmite was added, and the mixture was stirred for 1 hour and then dried for 6 hours at 650 ° C. in an air atmosphere. In the case of Comparative Example 1, the efficiency of decomposition of CF ₄ was reduced as time elapsed (Table 2).

Comparative Example  2. Preparation of Zn / alumina oxide catalyst

Zn (20 wt%) (108 g) was added to 100 g of distilled water and completely dissolved. 150 g of boehmite was added thereto and stirred for 1 hour. After filtration, it was dried at 110 DEG C for 8 hours. Lt; RTI ID = 0.0 > 650 C < / RTI > for 6 hours.

Experimental Example  One. Measurement and comparison of perfluorinated compound removal rate

In order to compare the removal rates of the perfluorinated compound (CF ₄ ) of the aluminum phosphate catalyst prepared by the method of Comparative Example 1 as the catalyst of Examples 1 to 3, the following experiment was conducted.

7.6 g of each of the catalysts prepared in Examples 1 to 3 and Comparative Example 1 were placed in a 3/4 inch Inconel reaction tube and the reaction temperature was adjusted to 650 to 800 ° C using an external heater. h- ¹ , tetrafluoromethane was decomposed while supplying tetrafluoromethane (CF ₄ ) 3000 ppm, air (Air) 368 ml / min and distilled water 0.04 ml / min. The conversion of tetrafluoromethane was calculated by the following equation (1), and the reactants were analyzed using FT-IR. The results are shown in Table 1 below.

Removal rate (%) Reaction temperature (캜) 650 ° C 700 ℃ 750 ℃ 800 ° C Example 1 80 93 98.0 99 Example 2 85.9 95 99.5 99.9 Example 3 89.0 100 99.9 100 Comparative Example 1 72.6 91 98.2 99.8 Comparative Example 2 86.1 98 99.8 99.9

As shown in Table 1, the removal rate of tetrafluoromethane in the catalyst prepared by the method of Example 3 according to the present invention was 99.5% under a temperature condition of 700 ° C or higher, The removal efficiency of tetrafluoromethane of the aluminum phosphate catalyst (Comparative Example 1) showed a removal efficiency of 91% of tetrafluoromethane under the condition of 700 ° C.

Experimental Example  2. Long term evaluation

The following experiments were conducted to compare the removal rates of perfluorinated compounds (CF ₄ ) with time for each catalyst prepared in Examples 1 to 3 and Comparative Examples 1 and 2.

In the same manner as in Experimental Example 1, except that the reaction temperature was fixed at 700 ° C., the removal rate of the tetrafluoromethane compound was measured over time. The results are shown in Table 2 below.

Removal rate (%) time Initial efficiency 400 (h) Example 1 93 88 Example 2 95 88 Example 3 100 95 Comparative Example 1 91 80 Comparative Example 2 98 83

As shown in Table 2, the removal rate of the peroxide compound of the oxidation catalyst of Example 3 was 97.0-95%, and it was confirmed that the conversion rate was maintained at 95% or more even after 17 days of continuous use.

Claims (14)

(I) aluminum trihydroxide, boehmite and boehmite (hereinafter referred to as " alumina catalyst "), and Zr (mass) = 100 (mass) produced by mixing, drying and firing zirconia (ZrO ₂ ) or zirconia sol in a water-containing solvent, and (ii) an alumina precursor material selected from the group consisting of pseudo- : A catalyst for hydrolysis of perfluorinated compounds comprising alumina and zirconia mixed catalyst supports of 0.01 to 50 wt%. The catalyst for hydrolysis of perfluorinated compounds according to claim 1, wherein zinc (Zn) as an active metal is supported on alumina and zirconia mixed catalyst support in an amount of 0.01 to 20 parts by weight per 100 parts by weight of the catalyst support. The catalyst support according to claim 1, wherein at least one selected from the group consisting of gallium, cerium, phosphorus, ruthenium, and cobalt is supported on alumina and zirconia mixed catalyst supports in an amount of 0.01 to 20 parts by weight, A catalyst for the hydrolysis of perfluorinated compounds. The catalyst for hydrolysis of perfluorinated compounds according to claim 2 or 3, wherein the active metal is supported on alumina and zirconia mixed catalyst supports by a wet-incipient method. Zirconia or zirconia sol with an alumina precursor selected from the group consisting of aluminum trihydroxide, boehmite and pseudo-boehmite (step 1); And
A process for producing a catalyst for hydrolysis of perfluorinated compounds according to claim 1, comprising a step (step 2) of producing Zr-alumina oxide having Al: Zr (mass) = 100: 0.01 to 50 by drying and firing. 6. The method of claim 5, further comprising the step of wet-impregnating, drying and calcining the Zr-alumina oxide support with an aqueous solution containing zinc (Zn) (step 3). The method according to claim 5, wherein an active metal selected from the group consisting of zinc, gallium, Cerium, Phosphorus, Ruthenium, and cobalt is added to an aqueous solution containing 0.01 to 20 parts by weight of an active metal relative to 100 parts by weight of the catalyst support, Further comprising the step of wet impregnating, drying and calcining the support (step 3). The method of claim 7, wherein, when the active metal precursor of the active metal-containing aqueous solution is phosphoric di-ammonium phosphate _{((NH 4) 2 HPO 4} ), ammonium dihydro phosphate _{(NH 4 H 2 PO 4)} , phosphoric acid (H ₃ PO ₄ ) Or a mixture thereof,
Wherein the precursor of the active metal other than phosphorus is an acetylacetate, a chloride, a cloiodide, a nitrosylnitrate, an oxide, or a mixture thereof of the metal. A process for treating a perfluorinated compound characterized by comprising the step of decomposing a perfluorinated compound in a gas containing a perfluorinated compound using the catalyst for hydrolysis of the perfluorinated compound according to any one of claims 1 to 3. 10. The method of claim 9, wherein the perfluorinated compound containing gas comprises a halogen acid gas. A semiconductor manufacturing process characterized by comprising the step of hydrolyzing a perfluorinated compound in a gas containing perfluorinated compound using the catalyst for hydrolysis of a perfluorinated compound according to any one of claims 1 to 3. 12. The semiconductor manufacturing process according to claim 11, wherein the gas containing the perfluorinated compound is a harmful waste gas discharged from a semiconductor manufacturing process. A process for producing a display characterized by comprising the step of hydrolyzing a perfluorinated compound in a gas containing perfluorinated compound using the catalyst for hydrolysis of the perfluorinated compound according to any one of claims 1 to 3. 14. The display manufacturing process according to claim 13, wherein the perfluorinated compound-containing gas is a harmful waste gas discharged from a display manufacturing process.

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