KR101848481B1 - Method for manufacturing metal-oxide thin film, metal-oxide thin film, and electric device thereof - Google Patents

Abstract

The present invention relates to a method for manufacturing an oxide thin film, and more particularly, to a method for manufacturing an oxide thin film using a low temperature process, an oxide thin film, and an electronic device therefor. The present invention can easily and quickly form a high-performance functional oxide thin film by a low-temperature solution process, thereby greatly shortening a manufacturing cost and a manufacturing time, thereby greatly improving productivity.

Description

FIELD OF THE INVENTION [0001] The present invention relates to an oxide thin film, an oxide thin film, and an electronic device therefor,

The present invention relates to a method for manufacturing an oxide thin film, and more particularly, to a method for manufacturing an oxide thin film using a low temperature process, an oxide thin film, and an electronic device therefor.

The oxide thin film is used as an electronic device in various fields such as a display field, a solar cell field, and a touch panel field, and a thin film having high electrical conductivity can be formed by a simple composition change.

In the case of conventional oxide thin films, expensive processes and materials have been mainly used. Recently, attention has been focused on thin film formation by solubilization using simple metal salts and organic chemicals.

However, in order to form a solution process oxide thin film, a high-temperature heat treatment temperature of 300 ° C or more is required. Such a high heat treatment temperature is required to increase the process cost of the oxide thin film, and also to perform a low temperature process such as plastic, paper, A problem arises which makes it impossible to use.

In addition, in the low-temperature formation process of the conventional functional oxide thin films, the methods of vacuum deposition (MOCVD, ALD, PECVD, etc.) and thin film formation by forming nanoparticles or nanostructures have been mainly used. However, And non-uniformity of the thin film, deterioration of performance, and the like.

BACKGROUND ART [0002] The background of the related art of the present invention is disclosed in Korean Patent Laid-Open Publication No. 2013-0116785 (published on October 24, 2014, a method of manufacturing an oxide thin film using a low temperature process, an oxide thin film and an electronic device thereof).

The present invention provides a method for producing an oxide thin film, a thin oxide film and an electronic device for forming a high performance functional oxide thin film at a low temperature by a solution process.

The present invention also relates to a method for manufacturing an oxide thin film which can form a functional oxide thin film easily and rapidly at a low temperature solution process, Device.

The present invention also provides a method for producing a functional oxide thin film, an oxide thin film and an electronic device thereof, which have flexibility in mechanical properties by forming an oxide on a substrate requiring a low temperature process.

The present invention also provides a method for preparing a high-performance functional oxide thin film, an oxide thin film and an electronic device using the precursor of a high-energy solution through heat treatment and irradiation with ultraviolet rays, by controlling the chemical reactivity through controlling the reactive atmosphere.

The objects of the present invention are not limited to the above-mentioned objects, and other objects not mentioned can be clearly understood from the following description.

According to an aspect of the present invention, there is provided a method for manufacturing an oxide thin film.

A method of manufacturing an oxide thin film according to an embodiment of the present invention includes forming an oxide solution as an oxide thin film on a substrate by a solution process, heat treating the oxide thin film formed, irradiating ultraviolet rays to the heat- A step of inducing volatilization and oxide formation; a step of irradiating the oxide thin film on which oxide formation is induced to remove the impurities of the oxide thin film by irradiation with ultraviolet rays; Lt; 0 > C to 254 nm to achieve oxygen defect control and metal dopant activation of the oxide thin film.

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The ultraviolet ray has a wavelength in the ultraviolet region or the extreme ultraviolet region, and may be 100 nm to 254 nm.

In the step of heat-treating the formed oxide thin film, the oxide thin film may be heat-treated at a temperature ranging from room temperature to 200 ° C.

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In the step of forming the oxide solution into an oxide thin film on a substrate by a solution process, the solution process may use any one of spin coating, dip coating, inkjet printing, offset printing, reverse offset printing, gravure printing and roll printing .

The substrate may be any one of plastic, paper, and a substrate of a textile material.

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Another aspect of the present invention provides an oxide thin film produced by the oxide thin film manufacturing method described above.

Another aspect of the present invention provides an electronic device comprising an oxide thin film produced by the oxide thin film manufacturing method described above.

On the other hand, the oxide thin film can be utilized as an electronic device in a thin-film transistor (TFT), a semiconductor field, a solar cell field, or a touch panel field in a display field, and a semiconductor layer, an insulating layer, electrode and the like. Most preferably, it is used as a channel layer of a thin film transistor. In addition, various types of thin film transistors are possible if the present invention can be applied. For example, a structure in which a gate electrode is formed under a channel layer, or a structure in which a gate electrode is formed in an upper portion of a channel layer.

The present invention can easily and quickly form a high-performance functional oxide thin film by a low-temperature solution process, thereby greatly shortening a manufacturing cost and a manufacturing time, thereby greatly improving productivity.

The present invention has the effect of manufacturing a flexible device by applying various solution process oxides including a conductor, a semiconductor, and a non-conductor to a substrate such as plastic, paper, and textiles.

1 is a view for explaining a method of manufacturing an oxide thin film according to an embodiment of the present invention.
2 is a structural view of an oxide thin film transistor according to an embodiment of the present invention.
3 is a structural view of a touch panel using an oxide electrode according to an embodiment of the present invention.
FIGS. 4 to 6 are views for explaining electrical characteristics of the ITO thin oxide transparent electrode according to an embodiment of the present invention. FIG.
7 (a) to 8 are views for explaining the effect of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Also, when a part is referred to as "including " an element, it does not exclude other elements unless specifically stated otherwise.

FIG. 1 is a view for explaining a method of manufacturing an oxide thin film according to an embodiment of the present invention.

Referring to FIG. 1, the oxide thin film manufacturing method includes an oxide thin film formation step, a heat treatment step, a solvent volatilization and oxide formation step, an impurity removal step, an oxygen defect control and a metal dopant activation step.

In the oxide thin film forming step of step S100, an oxide solution is coated on the substrate by a solution process to form an oxide thin film.

The oxide solution is selected from a zinc precursor, a gallium precursor, an indium precursor or a tin precursor, and mixtures thereof. Wherein the zinc precursor is selected from the group consisting of zinc chloride, zinc acetate, zinc acetate hydrate, zinc nitrate, zinc nitrate hydrate, zinc alkoxide alkoxides) or derivatives thereof. Gallium precursors include gallium nitrate, gallium nitrate hydrate, gallium acetate, gallium acetate hydrate, gallium alkoxides, or derivatives thereof. can do. The indium precursor may be selected from the group consisting of indium chloride, indium acetate, indium acetate hydrate, indium nitrate, indium nitrate hydrate, indium alkoxides ) Or derivatives thereof. Tin precursors may include Tin chloride, Tin acetate, Tin nitrate, Tin alkoxides, and derivatives thereof. It goes without saying that other metal precursors such as aluminum precursors may be utilized.

The oxide solution is a solvent for dissolving the precursors, for example, acetonitrile, 2-methoxyethanol, methanol, D.I. water or isopropylalcohol (IPA), but it is not limited thereto and can be used correspondingly to the precursors. The oxide solution may be, but is not limited to, mono-ethanolamine, acetic acid or acetylacetone as an additive. The oxide solution may be mixed with the nanomaterial solution and the oxide solution at the same time or may be used as a separate solution. Herein, the nanomaterial solution is prepared by mixing nanoparticles, nanorods, and nanowires with acetonitrile, 2-methoxyethanol, methanol, ethanol, and the like according to the substance and the dispersing agent. water or isopropyl alcohol (IPA). The oxide solution is not limited in the thickness of the oxide solution to be coated, and can be coated, for example, in a thickness of 5 to 300 nm.

The solution process may be, for example, spin coating, dip coating, ink jet printing, offset printing, reverse offset printing, gravure printing or roll printing. But the present invention is not limited thereto and may include all commonly used solution processes.

The substrate is not limited to a specific type, and a semiconductor substrate, a glass substrate, a polymer-based substrate such as plastic, paper, textile, or the like can be used. Since the present invention uses an ultraviolet irradiation method It may be more effective in the case of a substrate for a flexible display in which a high-temperature process such as a plastic series can not be performed.

The heat treatment step of step S200 heat-treats the oxide thin film formed on the substrate. Here, the heat treatment step is a step for stabilizing the oxide formed on the substrate, thereby improving the uniformity of the entire thin film and maintaining the thickness uniformity. In the heat treatment step, the oxide thin film is preferably heat-treated at 20 to 200 DEG C (including room temperature) for 1 to 60 minutes.

Next, in the solvent volatilization and oxide formation step of step S300, ultraviolet rays are irradiated on the heat-treated oxide thin film to induce solvent volatilization and oxide formation. This is a step for removal of the solvent contained in the oxide thin film and oxide formation. The ultraviolet ray to be irradiated has a wavelength in an ultraviolet ray region and / or an extreme ultraviolet ray region, specifically in a range of 100 nm to 254 nm, but more preferably in a range of 149 nm to 254 nm. In the case of ultra-low ultraviolet radiation (below 100 nm), the light source is very expensive, and ultraviolet light at too high a wavelength (above 254 nm) does not provide sufficient energy for efficient solvent volatilization and oxide formation. At this time, the temperature of the substrate which is raised due to ultraviolet irradiation is preferably maintained at about 50 to 300 ° C.

In the impurity removal step of step S400, the oxide thin film is irradiated with ultraviolet light to remove impurities contained in the oxide. Here, the impurities may be carbon, hydrogen, nitrogen, chlorine, etc. contained in the oxide itself. Such impurities may act as a factor for lowering the functionality of the thin film. It is preferable that the impurity removing step is maintained for 1 to 240 minutes by ultraviolet irradiation. If the ultraviolet ray is irradiated for too long (240 minutes or more), the oxide itself may be denatured or the substrate may be deformed. The ultraviolet ray to be irradiated has a wavelength in an ultraviolet ray region and / or an extreme ultraviolet ray region, specifically in a range of 100 nm to 254 nm, but more preferably in a range of 149 nm to 254 nm.

The oxygen defect control and metal dopant activation step in step S500 irradiate the oxide thin film with ultraviolet rays in a reactive atmosphere using hydrogen and an inert gas at a low temperature. The oxygen deficiency control and the metal dopant activating step are performed by directly mixing a hydrogen atmosphere with an inert gas such as nitrogen or argon to maintain the reactive atmosphere for functionalizing the oxide thin film and irradiating ultraviolet rays to the oxide thin film at a low temperature of 50 to 300 ° C To 240 minutes. If the ultraviolet ray irradiation time exceeds 240 minutes, there is a possibility of causing denaturation of the oxide or deformation of the substrate. The ultraviolet ray to be irradiated has a wavelength in an ultraviolet ray region and / or an extreme ultraviolet ray region, specifically in a range of 100 nm to 254 nm, but more preferably in a range of 149 nm to 254 nm. The oxygen defect control and the metal dopant activating step may be performed at the same time or after the step of removing the impurities of the oxide thin film described above.

On the other hand, the oxide thin film can be utilized as an electronic device in a thin-film transistor (TFT), a semiconductor field, a solar cell field, or a touch panel field in a display field, and a semiconductor layer, an insulating layer, electrode and the like. Hereinafter, the oxide thin film is utilized as a channel layer of a thin film transistor.

2 is a structural view of an oxide thin film transistor according to an embodiment of the present invention.

2, an oxide thin film transistor according to the present invention includes a substrate 100, a gate electrode 200, a gate insulating layer 300, an oxide channel layer 400, a drain electrode 500 and a source electrode 600, .

The oxide thin film transistor includes a gate electrode 200 and a gate insulating layer 300 formed on a substrate 100 and an oxide channel layer 400, a drain electrode 500, and a source electrode 600 ). ≪ / RTI > The oxide channel layer 400 is formed through heat treatment of the oxide thin film by ultraviolet ray irradiation and maintenance using the oxide thin film production method described above with reference to FIG. 1, that is, the low temperature formation method of the solution process oxide thin film. The oxide channel layer 400 provides a high-performance functional oxide thin film by controlling chemical reactivity through controlling the reactive atmosphere, and by using a high-energy solution precursor through heat treatment and ultraviolet irradiation. The method of forming the gate electrode 200, the gate insulating layer 300, the drain electrode 500, and the source electrode 600 is the same as or similar to that of a known thin film transistor, and thus a detailed description thereof will be omitted .

The gate electrode 200 may be formed of a metal such as ITO, IZO or ZTO in addition to a metal such as gold, silver, chromium, tantalum, titanium, copper, aluminum, molybdenum, tungsten, nickel, palladium, .

The gate insulating layer 300 may include an oxide film such as a silicon oxide film, a silicon nitride film, an aluminum oxide film or a tantalum oxide film and an organic material such as polyvinyl phenol, polyvinyl alcohol, polyimide, A mixed material of organic materials, a laminated structure, or the like.

For example, the oxide channel layer 400 may be formed by coating an oxide solution on the gate insulating layer 300 through a solution process, stabilizing it by heat treatment, then irradiating ultraviolet rays to induce oxide formation, The oxide channel layer 400 can be formed by removing impurities of the oxide and maintaining a reactive atmosphere using hydrogen and an inert gas at a low temperature and irradiating ultraviolet rays to the oxide thin film. Accordingly, a high-performance functional oxide thin film can be formed easily and rapidly at a low-temperature solution process, thereby greatly shortening a manufacturing cost and a manufacturing time, thereby greatly improving productivity.

The drain electrode 500 and the source electrode 600 may be formed of a metal such as gold, silver, chromium, calcium, barium, tantalum, titanium, copper, aluminum, molybdenum, tungsten, nickel, palladium, platinum, , A conductive polymer, a carbon nanotube (CNT), or the like.

3 is a structural view of a touch panel using an oxide electrode according to another embodiment of the present invention.

Referring to FIG. 3, a touch panel using an oxide electrode according to another embodiment of the present invention forms a pattern required for a touch panel, a solar cell, and a photo sensor on a substrate 100 by a solution process, When the oxide thin film 400 is formed by the oxide thin film manufacturing method described above, the oxide thin film electrode can be formed very easily by the low temperature process. The oxide thin film 400 provides a high-performance functional oxide thin film by controlling the chemical reactivity through controlling the reactive atmosphere and by using a high-energy solution precursor through heat treatment and ultraviolet irradiation. The solution process high performance oxide thin film of the present invention can be used for various applications such as solar cell, display panel, touch panel, sensor and diode.

Hereinafter, embodiments of the present invention will be described in detail, but the scope of the present invention is not limited to the following embodiments.

[Example 1]

A 200 nm thick silicon oxide film was formed on the heavily p-doped silicon wafer by heat treatment. The doped silicon wafer is used not only as a substrate but also as a gate electrode because of its high conductivity. The silicon oxide film formed by heat treatment serves as a gate insulating film. Then, for the formation of the IGZO oxide semiconductor on the silicon oxide film, the IGZO coating solution was spin-coated. The IGZO coating solution used was 2-methoxyethanol as the solvent, indium nitrate hydrate (0.0759 mol) (M), gallium nitrate hydrate (Indium nitrate hydrate) (M) and 0.0152 molar concentration (M) of zinc nitrate hexahydrate were used, respectively. A high energy solution phase precursor composition of 0.2 molar concentration of acetylacetone (M) and 0.3 molar ammonia (M) was prepared. The solution is coated and then subjected to a first heat treatment step. The temperature used in the first heat treatment step may vary from 20 to 200 ° C. In this embodiment, the first heat treatment step is performed at a temperature of 20 ° C and 200 ° C for 10 minutes, respectively. The sample was then moved to an instrument capable of irradiating ultraviolet and extreme ultraviolet light (wavelength band 149 nm to 254 nm) and irradiated for ultraviolet and extreme ultraviolet radiation for 90 minutes. At this time, the atmosphere was kept in a nitrogen atmosphere and nitrogen was continuously supplied. In order to obtain oxide thin film of sufficient thickness, the coating solution was coated once more, and the first heat treatment and extreme ultraviolet irradiation were repeated. Then, a sample was taken out and an IZO electrode layer having a thickness of 100 nm was formed on the IGZO channel layer using a lift-off method and patterned to form a source and a drain electrode.

[Example 2]

An ITO solution was spin coated on the glass substrate to form ITO thin film transparent electrodes. The ITO coating solution used was 2-methoxyethanol as the solvent, indium nitrate hydrate (0.36 molar concentration), tin (II) chloride (II) chloride ) Chloride) 0.04 mol (M), acetylacetone 0.8 mol (M), ammonia 0.63 mol (M) and ammonium nitrate 0.04 mol (M) Respectively. The solution is coated and then subjected to a first heat treatment step. The temperature used in the first heat treatment step may vary from 20 to 200 ° C. In this embodiment, the first heat treatment step was performed at a temperature of 50 캜 for 10 minutes. Subsequently, the sample was moved to a device capable of irradiating ultraviolet light and extreme ultraviolet light (wavelength band 149 to 254 nm), and ultraviolet light and extreme ultraviolet light were irradiated for 30 minutes. At this time, the atmosphere was kept in a nitrogen atmosphere and nitrogen was continuously supplied. In order to obtain a thin film of sufficient thickness, coating of the solution and primary heat-treatment extreme ultraviolet irradiation were repeated to the desired thickness. After that, 5% hydrogen mixed nitrogen was continuously supplied, and the substrate temperature was maintained at 200, 275, and 300 ° C and extreme ultraviolet rays were irradiated for 30 minutes.

FIG. 4 shows resistivity and conductivity characteristics and Hall measurement results of the ITO device fabricated in the same manner as in the second embodiment. Referring to FIG. 4, it can be seen that the present invention has sufficient resistivity and conductivity characteristics at reaction temperatures of 200, 275 and 300 ° C.

[Example 3]

An ITO solution was spin coated on the glass substrate to form ITO thin film transparent electrodes. The ITO coating solution used was 2-methoxyethanol as the solvent, indium nitrate hydrate (0.36 molar concentration), tin (II) chloride (II) chloride ) Chloride) 0.04 mol (M), acetylacetone 0.8 mol (M), ammonia 0.63 mol (M) and ammonium nitrate 0.04 mol (M) Respectively. The solution is coated and then subjected to a first heat treatment step. The temperature used in the first heat treatment step may vary from 20 to 200 ° C. In this embodiment, the first heat treatment step was performed at a temperature of 50 캜 for 10 minutes. Subsequently, the sample was moved to a device capable of irradiating ultraviolet light and extreme ultraviolet light (wavelength band 149 to 254 nm), and ultraviolet light and extreme ultraviolet light were irradiated for 30 minutes. At this time, the atmosphere was kept in a nitrogen atmosphere and nitrogen was continuously supplied. To obtain a thin film of sufficient thickness, the coating of the solution and the first heat treatment extreme ultraviolet irradiation were repeated three more times. Subsequently, 3 ml of hydrazine monohydrate was supplied to the equipment, nitrogen was continuously supplied, and the substrate temperature was kept at 100, 150 ° C and extreme ultraviolet was irradiated for 30 minutes.

FIG. 5 shows resistivity and conductivity characteristics and Hall measurement results of the ITO device fabricated in the same manner as in the third embodiment. Referring to FIG. 5, it can be seen that the present invention has excellent resistivity and conductivity at a reaction temperature of 100 and 150 ° C.

[Example 4]

An ITO oxide nanostructure transparent electrode was formed on a glass substrate by spin coating a 6 wt% 20 to 100 nm ITO nanoparticle solution dispersed in IPA. The solution is coated and then subjected to a first heat treatment step, wherein the temperature used in the first heat treatment step may vary from 20 to 200 ° C. In this embodiment, the first heat treatment step was performed at a temperature of 50 캜 for 10 minutes. Then, the ITO solution was spin-coated on the nanoparticle structure for connection between the nanoparticles. The ITO coating solution used was 2-methoxyethanol as the solvent, indium nitrate hydrate (0.36 molar concentration), tin (II) chloride (II) chloride ) Chloride) 0.04 mol (M), acetylacetone 0.8 mol (M), ammonia 0.63 mol (M) and ammonium nitrate 0.04 mol (M) Respectively. The solution is coated and then subjected to a first heat treatment step. The temperature used in the first heat treatment step may vary from 20 to 200 ° C. In this embodiment, the first heat treatment step was performed at a temperature of 50 캜 for 10 minutes. Subsequently, the sample was moved to a device capable of irradiating ultraviolet light and extreme ultraviolet light (wavelength band 149 to 254 nm), and ultraviolet light and extreme ultraviolet light were irradiated for 30 minutes. At this time, the atmosphere was kept in a nitrogen atmosphere and nitrogen was continuously supplied. To obtain a thin film of sufficient thickness, the coating of the solution and the first heat treatment extreme ultraviolet irradiation were repeated three more times. Then, 5% hydrogen mixed nitrogen was continuously supplied, and the substrate temperature was kept at 250, 275, and 300 ° C, and extreme ultraviolet rays were irradiated for 30 minutes.

FIG. 6 shows resistivity and conductivity characteristics and Hall measurement results of an ITO device fabricated in the same manner as in Example 4 described above. Referring to FIG. 6, it can be seen that the present invention has sufficient resistivity and conductivity characteristics at reaction temperatures of 250, 275 and 300 ° C.

Figs. 7 (a) to 8 are diagrams for explaining the effect of the present invention. Fig.

7 (a) and 7 (c) are electron mobility diagrams when a high-energy precursor is used at a reaction temperature of 100 ^° C and 120 ^° C according to an embodiment of the present invention. And FIG. 7 (d) are graphs showing the electron mobility when a sol-gel precursor is used at a reaction temperature of 100 ^° C. and 150 ^° C. according to an embodiment of the present invention. The vertical axis on the left side of the drawing shows the current (A), the vertical axis on the right side shows the electron mobility (cm ² / Vs), and the horizontal axis shows the gate voltage (V).

Figure 7 (a) to Referring to FIG. 7 (d), the present invention, using a high-energy precursor of the present invention in a low temperature 100 ^o 150 ^o C reported in the prior invention, movement of the C Figure 2-2.5 cm ² / achieves the Vs, the present invention can be seen that by moving the optical activation reaction of 100 ^o C, and also achieve a ² cm 2 / Vs even greater movement in 120 ^o C also achieved a 4-4.5 cm ² / Vs. Therefore, the present invention is able to realize a photo activation reaction at a low temperature through the control of the precursor chemistry unlike the prior art.

FIG. 8 shows electrical properties using a photochemical reaction under a reactive atmosphere according to an embodiment of the present invention. In the present invention, the electrical characteristics of 72-nm ITO using a photo-activation reaction were measured at a reducing atmosphere (H ₂ , N ₂ H ₄ H ₂ O) and a reaction temperature of 100 ^° C, , And 300 ^° C, respectively.

Referring to FIG. 8, although the photochemical reaction using the inert atmosphere can activate the conductor, the photoactivation reaction using the reducing atmosphere mainly increases the oxygen deficiency and further increases the charge mobility, . ≪ / RTI > This indicates that the control of the chemical atmosphere such as the reducing atmosphere of the present invention plays a major role in improving the electrical properties.

The embodiments of the present invention have been described above. It will be understood by those skilled in the art that the foregoing description of the present invention has been presented for illustrative purposes and that those skilled in the art will readily understand that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It will be possible. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention.

100: substrate
200: gate electrode
300: gate insulating layer
400: oxide channel layer
500: drain electrode
600: source electrode

Claims (11)

In the method for producing an oxide thin film,
Forming an oxide solution into an oxide thin film on a substrate by a solution process;
Heat treating the formed oxide thin film;
Irradiating the heat-treated oxide thin film with ultraviolet light to induce solvent volatilization and oxide formation;
Irradiating the oxide thin film on which oxide formation is induced with ultraviolet light to remove impurities of the oxide thin film; And
The oxide thin film at a low temperature of 50 to 300 DEG C in which the impurities are removed in an atmosphere of nitrogen mixed with hydrogen is irradiated with extreme ultraviolet rays having a wavelength band of 149 to 254 nm to control oxygen defects and activation of metal dopants To form an oxide thin film.
delete delete delete The method according to claim 1,
Wherein the ultraviolet light has a wavelength in an ultraviolet region or an extreme ultraviolet region, and is from 100 nm to 254 nm.
The method according to claim 1,
The step of heat-treating the formed oxide thin film
Wherein the oxide thin film is heat-treated at a temperature ranging from room temperature to 200 占 폚.
delete The method according to claim 1,
In the step of forming the oxide solution into an oxide thin film on a substrate by a solution process, the solution process may be performed by using an oxide thin film using any one of spin coating, dip coating, inkjet printing, offset printing, reverse offset printing, gravure printing, ≪ / RTI >
The method according to claim 1,
Wherein the substrate is one of a plastic, a paper, and a substrate of a textile material.
An oxide thin film produced by the oxide thin film manufacturing method according to any one of claims 1, 5, 6, 8, and 9.
An electronic device comprising an oxide thin film produced by the oxide thin film manufacturing method according to any one of claims 1, 5, 6, 8, and 9.

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