KR101797660B1 - Electronic component with indium alloy electric plating layer having excellent blackening resistance and method using the same - Google Patents

Abstract

The present invention relates to an electric and electronic device part having an indium alloy electrolytic plating layer excellent in weathering resistance and a method of manufacturing the same, and more particularly, to an electric and electronic device part having an indium alloy electroplating layer having excellent heat resistance and black weatherability, To an electric and electronic device part having an indium alloy electrolytic plating layer excellent in weathering resistance and a manufacturing method thereof.

Description

TECHNICAL FIELD [0001] The present invention relates to an electric and electronic device part having an indium alloy electrolytic plating layer excellent in weathering resistance, and a method of manufacturing the same. BACKGROUND ART [0002]

The present invention relates to an electric and electronic device part having an indium alloy electrolytic plating layer excellent in weathering resistance, and more particularly to an electric and electronic device part having excellent heat resistance and black marking, low contact electric resistance, high light reflectivity, And an electrodeposition coating layer of an indium alloy excellent in weathering resistance by electroplating the excellent indium alloy, and a manufacturing method thereof.

In general, a light emitting device such as a light emitting diode (LED) emits a considerable amount of heat to the outside. A light emitting device having a light emitting element such as a light emitting diode (LED) is provided with a light reflecting surface for further improving brightness. The light reflecting surface is attached to the bottom and periphery of the light emitting element such that light reflected on the side surface and the bottom surface of the light emitting element is directed, for example, in the main axis direction of irradiation. In the case of a light source such as a flash module, a reflector is attached to the LED package to attach the LED package to the circuit board in order to compensate the straightness of the generated light toward the front. Such a light reflecting surface and a light reflecting plate are mainly formed by plating a metal on the surface. Among the various metals, since silver plating is highly reflecting light, a silver (Ag) plating layer is widely used as a reflecting surface.

However, in the silver (Ag) plating layer, the silver (Ag) plated surface reacts with moisture, sulfur ions, and chlorine ions as time elapses or humidity and temperature rise in an environment containing sulfur, There is a problem that the light reflectance is lowered because the color gradually changes to black. For this reason, a method is employed in which silver (Ag) is formed by coating a protective coating layer composed of an organic material on a plated reflective surface. These countermeasures are effective in their own way. However, due to the high temperature condition of the plasma pretreatment and the manufacturing process at the time of manufacturing a light emitting diode (LED) package, the organic protective film layer for preventing the surface of the silver plating layer from being changed, And the effect of preventing the sulfuration reaction which causes discoloration is largely reduced so that the discoloration of the surface of the silver plating layer due to the heat generation of the light emitting element and the sulfidation reaction at the time of use of the apparatus for a long time can not be suppressed Will not have a satisfactory effect.

Taking this into consideration, it is preferable to form a silver plating reflecting surface and a reflector which have excellent weathering resistance against reaction with water, chlorine, and sulfur generated on the plated surface of electric / electronic parts and heat. In addition, although the silver (Ag) plating structure is widely used for contacts such as switches (refer to KR 10-2011-0007062, 10-1298780), the surface of the contact plated with silver also has a problem that the time has elapsed, The surface of the substrate is discolored due to temperature rise. Taking this fact into consideration, it is required to invent a plating contact material excellent in heat resistance and black weathering.

As described above, it is preferable to form a plating structure which is free from damage that the surface of the silver plating is discolored due to the passage of time or generated heat in an environment containing chlorine ion, sulfur ion component and moisture. In addition, various methods for improving the corrosion resistance, electrical connectivity, and the like by plating the surfaces of various metal substrates with silver have been conventionally attempted. In recent years, light emitting diodes have been used as reflective surfaces utilizing the reflection performance peculiar to silver, In the light emitting diode, silver plating is applied to the bottom surface and some side surfaces as a reflecting surface. Silver plating is also applied to reflectors that direct the generated light of the LED in a certain direction. However, the silver (Ag) surface has a problem that it is easily discolored black due to reaction with chlorine and sulfur and generation of heat.

Because of these features, it has been disclosed to form tin or tin and silver alloy layers on the surface in order to meet the demand for soldering characteristics in silver plating in printed circuit boards (see KR 10-2007-0041759). In this case, when the tin or tin and silver alloy layers are thickened, there arises a problem that the contact resistance is increased, and the inherent luster and reflection performance of silver deteriorates and the function thereof is lost. (See KR 10-0572089). However, since the organic thin film is largely removed in the process of packaging the light emitting diode and the heat resistance is insufficient, There is a problem with sex.

1. Korean Patent No. 1521874 2. Korean Patent No. 1298780 3. Korea Patent No. 0572089 4. Korean Patent Publication No. 10-2011-0007062

The present invention has been made in view of the above-mentioned needs, and it is an object of the present invention to provide a method for manufacturing a semiconductor device, which comprises forming an indium (In) alloy plating layer and discoloring gold (Au) or silver (Ag) And a method for producing the same, which is capable of preventing the surface of the electroplating layer from being discolored by reacting in an atmosphere containing the electroplating layer and the electroplating layer.

According to an aspect of the present invention, there is provided an electrical and electronic device component having a plating layer having excellent anti-blackness and electrical conductivity, comprising: a base metal layer formed of nickel (Ni) or copper (Cu) An intermediate plating layer formed of gold (Au) or silver (Ag) on the base plating layer, and an indium (In) alloy plating layer formed of an indium (In) alloy by electrolytic plating on the intermediate plating layer.

In some embodiments of the present invention, the indium (In) alloy is selected from the group consisting of indium (In) and tin (Sn), zinc (Zn), manganese (Mn), nickel (Ni), copper (Cu), cobalt Containing at least one additive metal selected from the group consisting of cadmium (Cd), palladium (Pd), antimony (Sb), rhodium (Rh), chromium (Cr), tungsten (W), gold (Au) and platinum It can be made more than a circle system.

In some embodiments of the present invention, the indium (In) alloy plating layer may be composed of 10 to 90 wt% of indium (In) and 10 to 90 wt% of the at least one additive metal.

In some embodiments of the present invention, the indium (In) alloy plating layer comprises 30 to 70 wt% of indium (In), 10 to 30 wt% of tin and 20 to 60 wt% of zinc, ≪ / RTI >

In some embodiments of the present invention, the indium (In) alloy plating layer may further include 1 to 5 wt% of manganese (Mn) or nickel (Ni).

In some embodiments of the present invention, the indium (In) alloy plating layer is composed of a ternary system of indium (In) - tin (Sn) - zinc and indium (In) - manganese (Mn) In the quaternary alloy of zinc (Zn), indium (In) - nickel (Ni) - tin (Sn) - zinc (Zn) or indium (In) - rhodium (Rh) It can be either.

In some embodiments of the present invention, the underlying plating layer may have a thickness of 0.001 to 10 mu m.

In some embodiments of the present invention, the intermediate plating layer may have a thickness of 0.001 to 100 mu m.

In some embodiments of the present invention, the indium alloy plating layer may have a thickness of 0.0001 to 1.0 mu m.

In some embodiments of the present invention, the electrical and electronic components may be a support for mounting a light emitting element.

According to an aspect of the present invention, there is provided a method of forming a plating layer having excellent anti-blackness and electrical conductivity on an electrical and electronic part of a device, comprising the steps of: Forming an intermediate plating layer of gold (Au) or silver (Ag) on the base plating layer; and forming a plating layer of indium (In) And then plating it.

In some embodiments of the present invention, the method may further comprise cleaning the electrical and electronic components before forming the underlying plating layer.

In some embodiments of the present invention, the intermediate plating layer may be formed using an electrolytic plating method.

In some embodiments of the present invention, the underlying plating layer may be plated using a nickel (Ni) or copper (Cu) plating solution.

In some embodiments of the present invention, the intermediate plating layer may be plated in a silver plating solution composed of silver cyanide (AgCN) and potassium cyanide (KCN).

In some embodiments of the present invention, the indium (In) alloy is selected from the group consisting of indium (In) and tin (Sn), zinc (Zn), manganese (Mn), nickel (Ni), copper (Cu), cobalt At least one of cadmium, cadmium, palladium, palladium, antimony, rhodium, chromium, tungsten, Or a binary system including a metal.

According to an aspect of the present invention, there is provided a light emitting device including an electrical and electronic device part, the method including the steps of: forming a plating layer having excellent anti-blackness and electrical conductivity.

According to an aspect of the present invention, there is provided an electrical and electronic device contact point comprising a plating layer having excellent anti-blackness and electrical conductivity, the contact pad comprising a base plating layer formed of nickel (Ni) or copper (Cu) An intermediate plating layer formed of gold (Au) or silver (Ag) on the lower plating layer, and an indium (In) alloy plating layer formed of indium (In) alloy on the intermediate plating layer.

In some embodiments of the invention, the contact may be a switch contact or a contact of an electrical or electronic component.

In the electric and electronic device parts having the plating layer excellent in the anti-blackness and electrical conductivity according to the present invention, gold (Au) or silver (Ag) plated on the surface is discolored by the passage of time, It is possible to prevent discoloration of the surface due to blackening of the surface, thereby improving reliability.

In addition, a light-emitting device having a light-emitting element such as a light-emitting diode has excellent heat resistance, prevents the surface from being discolored by reaction in an atmosphere containing chlorine or sulfur, and has an indium alloy electroplating structure with improved initial light reflectance And a light-emitting element mounting support having a reflecting surface.

In addition, electronic and electric device parts having an indium alloy electroplating layer have inherent luster of gold (Au) or silver (Ag) due to the indium alloy electroplating, have low contact resistance, and have excellent bonding with the bonding wire wire bonding.

The effects of the present invention described above are exemplarily described, and the scope of the present invention is not limited by these effects.

1 is a cross-sectional explanatory view showing an example of the shape of a silver alloy electroplating structure for obtaining a plating structure of the present invention.
2 (a) and 2 (b) are cross-sectional schematic diagrams showing an example of a lead frame type having a plating structure of the present invention.
Figs. 3 (a), 3 (b) and 3 (c) are cross-sectional schematic diagrams showing substrate types of each step of forming the plating structure of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. The scope of technical thought is not limited to the following examples. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the scope of the invention to those skilled in the art. As used herein, the term "and / or" includes any and all combinations of one or more of the listed items. The same reference numerals denote the same elements at all times. Further, the various elements and regions in the drawings are schematically drawn. Accordingly, the technical spirit of the present invention is not limited by the relative size or spacing drawn in the accompanying drawings.

The electric and electronic device parts having the plating layer having excellent anti-blackness and electrical conductivity according to the present invention may include a lower plating layer, an intermediate plating layer and an indium (In) alloy plating layer.

The underlying plating layer may be formed of nickel (Ni) or copper (Cu) on the surface of the component, and may have a thickness of 0.001 to 10 탆. The intermediate plating layer may be formed of gold (Au) or silver (Ag) on the base plating layer and may have a thickness of 0.001 to 100 탆. The indium (In) In) alloy may be formed by electrolytic plating, and the indium alloy plating layer may have a thickness of 0.0001 to 1.0 mu m.

As shown in Fig. 1, an electric and electronic device part having a plating layer with excellent anti-blackness and electric conductivity has a base plating layer 103 formed of nickel (Ni) or copper (Cu) on the surface of the plating support 102, An intermediate plating layer 104 formed of gold (Au) or silver (Ag) on the lower plating layer 103 and an indium (In) alloy plating layer 105 formed on the intermediate plating layer 104 by electrolytic plating .

 The support 102 for plating is a conductor which can be electroplated and can be made of metal. For example, a copper-based metal, an iron-based metal, an aluminum-based metal, and a stainless steel-based metal, but is not limited to these metals.

On the other hand, in the case of using a copper-based metal, nickel (Ni) or copper (Cu) plating is performed as underlying plating before plating of gold (Au) or silver (Ag) on the plating supporting member 102. In the case where the plating support 102 is made of ceramic or resin, it is also possible to form a conductive coating on its surface by electroless plating, vapor deposition, or metalizing by diffusion formation of the metal layer.

The shape of the plating support 102 is not limited to that shown in Fig. 1, but may be a pin or a pipe. The plating structure of the present invention can be formed by a plating support, which is made of a long member such as a metal wire or a wire, and is provided with a base plating layer, an intermediate plating layer and an electrolytic plating And an indium alloy plating layer formed in this order.

The indium (In) alloy plating layer may be formed by electrolytic plating of an indium (In) alloy on the intermediate plating layer. The indium (In) alloy plating layer may have a thickness of 0.0001 to 1.0 mu m. The indium alloy plating layer 105 having a thickness of 0.0001 to 1.0 占 퐉 is excellent in electrical conductivity and excellent in light reflectance and is formed of an intermediate plated layer 104 formed of gold or silver over time or discolored by heat, It is possible to suppress the accelerated blackening by reacting in the contained atmosphere. If the thickness of the indium alloy plating layer 105 is 0.0001 탆 or less, the weathering resistance becomes insufficient in an atmosphere containing chlorine or sulfur. If the thickness of the indium alloy plating layer 105 is 1 占 퐉 or more, the surface characteristics and surface electrical conductivity specific to gold or silver are lowered and the function thereof starts to deteriorate. In addition, have.

The indium (In) alloy includes indium (In) and tin (Sn), zinc (Zn), manganese (Mn), nickel (Ni), copper (Cu), cobalt (Co), cadmium (Cd) ) Or at least one additive metal selected from the group consisting of antimony (Sb), rhodium (Rh), chromium (Cr), tungsten (W), gold (Au) and platinum (Pt). Among them, tin (Sn), zinc (Zn), nickel (Ni), rhodium (Rh), chromium (Cr), tungsten (W), palladium (Pd), gold (Au), manganese Pt) is particularly preferable because it has excellent weathering resistance in an environment containing chlorine or sulfur.

The indium (In) alloy plating layer may be a binary or indium (In) alloy plating layer composed of 10 to 90 wt% of indium (In) and 10 to 90 wt% 10 to 30 wt% of tin (Sn), and 20 to 60 wt% of zinc (Zn). It is also preferable that the indium (In) alloy plating layer is formed by adding 1 to 5 wt% of manganese (Mn) or nickel (Ni) to the quaternary metal (In) alloy plating layer.

The indium (In) alloy plating layer is composed of a ternary system of indium (In) - tin (Sn) - zinc (Zn), indium (In) - manganese (Mn) - tin (Sn) Or a quaternary alloy of nickel (Ni) - tin (Sn) - zinc (Zn) or indium (In) - rhodium (Rh) - tin (Sn) - zinc (Zn).

The indium alloy plating layer formed by the electrolytic plating method is a binary ternary system of In-Sn or In-Zn or a ternary system of In-Sn-Zn. In the present invention, the indium (In) 10 to 30 wt% of tin (Sn), and 20 to 60 wt% of zinc (Zn). When the content of indium in the indium alloy plating layer is 30 wt% or less, black discoloration is easy. When it is more than 70 wt%, the light reflectance and electric conductivity are lowered. When the content is less than 10 wt%, tin is easily discolored. When the content is more than 30 wt%, the electrical conductivity is deteriorated and the light reflectivity is deteriorated. When the content of zinc is less than 20 wt% If it is more than wt%, the electrical conductivity is deteriorated and the light reflectivity becomes worse.

In addition, it is also preferable to form a quaternary alloying gold plating layer in which 1 to 5 wt% of one of manganese (Mn) and nickel (Ni) is added.

An electric and electronic device part having a plating layer excellent in anti-blackness and electric conductivity according to the present invention is formed by forming a base plating layer of nickel (Ni) or copper (Cu) and forming a plating layer of gold (Au) or silver An intermediate plated layer is formed, and an indium alloy plating layer having excellent blackening and heat resistance characteristics is formed by electrolytic plating.

This is different from the conventional form of a metal such as zinc on a silver plating layer, which forms a protective plating layer and forms a layer which is alloyed with another metal at the interface of the silver plating layer by mechanical diffusion with the silver plating layer by heating, Is alloyed by electroplating to inhibit discoloration of the surface is remarkably different in that tin is the main component and silver luster and surface electrical resistance increase.

The electric and electronic device parts may be a support for mounting a light emitting element. FIG. 2 is a view showing an example of a form of a support for mounting a light emitting diode (LED) having a plating structure of the present invention, in which a lead frame 201 for LED which has been plated with indium alloy, a Au wire bonding (202) and the light emitting device 203 that has been packaged.

The support 200 for mounting a light emitting element means a substrate of a lead frame having a recess 206 or a portion on which the light emitting element 204 is mounted. The substrate in the form of a lead frame is composed of the land 208 and the lid 209 and the recess 206 can be formed so that the light emitting element can be mounted on the land 208 more easily.

The light emitting element 204 is located on the bottom surface of the concave portion 206 so that one terminal of the light emitting element 204 is energized via the land 208 and the bonding wire 205, The terminal is energized with the lead 209 through the wire 214.

In the present invention, gold (Au) or silver (Ag) is formed by plating the reflective surface with nickel (Ni) or copper (Cu) And the upper surface of the intermediate plating layer is plated by electrolytic plating to form indium (In) and tin (Sn), zinc (Zn), manganese (Mn), nickel (Ni), copper (Cu), cobalt And indium (indium), which is an alloy of two or more elements, with at least one of metal (Cd), palladium (Pd), antimony (Sb), rhodium (Rh), chromium (Cr), tungsten (In) alloy electroplating layer.

The method for forming a plating layer having excellent anti-blackness and electrical conductivity in the electric and electronic part of the present invention includes the steps of forming a base plating layer, forming an intermediate plating layer, and forming an indium (In) alloy plating layer can do. The method may further include cleaning the electric and electronic parts before forming the underlying plating layer.

As shown in Fig. 1, in a method for manufacturing an electric and electronic component part having a plating layer excellent in resistance to black color and electric conductivity, the surface of the plating support member 102 is first degreased or the like, The surface of the intermediate plating layer 104 is cleaned and the surface of the intermediate plating layer 104 is cleaned and then the plating layer 103 is formed to a thickness of 0.001 to 10 μm by copper or nickel and the intermediate plating layer 104 is formed of gold or silver to a thickness of 0.001 to 100 μm, An indium alloy plating layer 105 having a thickness of 0.0001 to 1.0 占 퐉 may be formed by electrolytic plating.

The step of forming the underlying plating layer may be formed by plating nickel or copper on the surface of the component. The underlying plating layer may be formed by plating a nickel (Ni) or copper (Cu) can do.

The step of forming the intermediate plating layer may be formed by plating gold (Au) or silver (Ag) on the upper plating layer, and the intermediate plating layer may be formed using an electrolytic plating method. The intermediate plating layer may be plated in a silver plating solution composed of silver cyanide (AgCN) and potassium cyanide (KCN).

The intermediate plating layer 104 formed of gold (Au) or silver (Ag) can be obtained by plating gold (Au) or silver (Ag) on the surface of the plating support 102 by a general plating method. The intermediate plating layer 104 may be formed of gold (Au) or silver (Ag) by other film formation methods such as electroless plating and vacuum deposition, and the thickness of the intermediate plating layer 104 is preferably 0.001 to 100 mu m . It is preferable that the plating supporting member 102 is formed with a base plating layer 103 such as nickel (Ni) or copper (Cu) on its surface.

In the step of forming the indium (In) alloy plating layer, an indium (In) alloy plating layer made of indium (In) alloy may be formed on the intermediate plating layer by electrolytic plating.

The indium (In) alloy includes indium (In) and tin (Sn), zinc (Zn), manganese (Mn), nickel (Ni), copper (Cu), cobalt (Co), cadmium (Cd) ) Containing at least one additive metal selected from palladium (Pd), antimony (Sb), rhodium (Rh), chromium (Cr), tungsten (W), gold (Au) and platinum .

The indium alloy electroplating structure 101 having a high reliability and a black marking according to the present invention is excellent in gold (Au) or silver (Ag) plating, although the thickness of the indium alloy plating layer 105 is as thin as 0.0001 to 1.0 占 퐉 The discoloration of the intermediate plating layer 104 formed by the first plating layer 104 is prevented. This is because the indium alloy plating layer 105 is plated by electroplating to form a layer for protecting the intermediate plating layer 104, so that the plated indium alloy structure suppresses the discoloration reaction action. The intermediate plating layer 104 and the indium alloy plating layer 105 can be formed by electrolytic plating.

The light emitting device including the electric and electronic device parts according to the present invention can be manufactured by a method of forming a plating layer having excellent anti-blackness and electrical conductivity. 2 shows the light emitting device in which the light emitting element 204 is mounted. In the mounting step of the light emitting element 204, the heating furnace antireflection film may be peeled off or scattered in order to mold the case, wire bonding with the chip, and curing the resin. As the effect of preventing the discoloration of the plating layer formed of gold (Au) or silver (Ag) is reduced, the metal plated on the reflecting surface reacts at high temperature or reacts in an environment containing chlorine or sulfur, There is a problem that the reflectance is lowered.

When the light emitting element 204 emits light, heat generation is accompanied. In the reflective surface formed of the plating layer formed of conventional gold (Au) or silver (Ag), the discoloration further proceeds due to the decrease in the effect of preventing discoloration due to such heat generation.

On the contrary, the reflective surface of the support 200 for mounting a light emitting element of the present invention hardly causes discoloration due to passage of time or temperature rise of the reflective surface, and can maintain a high reflectance for a long period of time. That is, a plating layer formed of highly reliable light reflection gold (Au) or silver (Ag) for a light emitting element (LED) can be obtained.

2B shows a structure in which the lead 209 of the substrate is connected in the form of a chip scale flip chip 214 without being connected through wires. A phosphor 215 and a resin 216 constituting the phosphor and the lens are shown.

FIG. 3 illustrates an example of a PCB type light emitting diode (LED) packaging structure to which the present invention is applied. The light emitting device LED is disposed on the reflective surface 314 on which an intermediate plating layer formed of gold (Au) or silver (Ag) according to the present invention and an indium (In) alloy plating layer are formed. Since the reflective surface 314 according to the present invention has a light reflectivity inherent to gold (Au) or silver (Ag) and discoloration due to heat or chlorine or sulfur due to passage of time hardly occurs, (LED) has high reliability since it has a large amount of emitted light and hardly reduces the amount of emitted light with time.

Reference numerals 301, 311 and 321 in FIGS. 3 (a), 3 (b) and 3 (C) are related to a PCB for a light emitting diode (LED), and are a layout after mounting the light emitting diodes 302 and 312 and wire bonding, And FIG. Reference numerals 303, 313 and 323 are layout drawings after packaging is completed.

The electrical and electronic device contacts having the plating layer having excellent anti-blackness and electrical conductivity according to the present invention can be plated with a base plating layer, an intermediate plating layer and an indium (In) alloy plating layer. The contact may be a contact of a switch contact or an electrical or electronic component.

The underlying plating layer may be formed of nickel (Ni) or copper (Cu) on the surface of the component. The intermediate plating layer may be formed of gold (Au) or silver (Ag) on the base plating layer. The indium (In) alloy plating layer may be formed of an indium (In) alloy on the intermediate plating layer.

The plating structure of the present invention may be substituted for post-treatment of gold plating of PCB products, and may be applied to parts such as probe pins, switches, and bus bars. The probe pin, switch contact or terminal having the plating structure of the present invention has gloss and good surface electrical conductivity of gold or silver and prevents the reaction in an environment containing heat or chlorine or sulfur by long-term use The change in the surface characteristics is small.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, details of the present invention will be described with reference to examples and experimental examples.

1. Indium alloy electroplating layer formation

The copper alloy lead frame was the same as the plating support 102 of FIG. 1 and was used as a plating sample material. A copper or nickel base plating of 0.5 mu m was applied to one surface of the plating sample, and intermediate plating of gold or silver having a thickness of 1 mu m was carried out to prepare a basic sample. To this basic sample, indium and tin Electroplating was performed to form an indium alloy electrolytic plating layer made of at least one metal of manganese, copper, nickel, cobalt, zinc, cadmium, palladium, antimony, rhodium, chromium, tungsten, .

[Example 1]

The lead frame shown in Fig. 2 was subjected to nickel plating and silver intermediate plating, and a ternary system and a quaternary indium alloy electrolytic plating. The lead frame was formed by punching using a copper alloy. The molded lead frame was degreased, cleaned, and subjected to nickel plating with nickel plating solution (500 g / L of sodium hypophosphite, 50 g / L of boric acid and 5 g / L of nickel chloride). The coating thickness of the underlying nickel plating was 0.3 탆. Subsequently, silver plating with a plating film thickness of 1 占 퐉 was performed with a silver plating solution (90g / L of cyanide silver and 100g / L of potassium cyanide).

Silver plating was performed, and then a ternary indium alloy plating solution (20 g / L of indium sulfate, 5 g / L of sodium tartrate, 10 g / L of zinc sulfate, 100 g / L of potassium cyanide, 20 g / Tin (Sn) -zinc (Zn), which had a plating film thickness of 0.01 mu m, and then washed and dried to obtain a multi-layered lead frame.

[Example 2]

The lead frame shown in Fig. 2 was subjected to nickel plating, silver plating and silver plating, and quaternary indium alloy electroplating. The lead frame was formed by punching using a copper alloy. The molded lead frame was degreased, cleaned, and subjected to nickel plating with nickel plating solution (500 g / L of sodium hypophosphite, 50 g / L of boric acid and 5 g / L of nickel chloride). The coating thickness of the underlying nickel plating was 0.3 탆. Subsequently, silver plating with a plating film thickness of 1 占 퐉 was performed with a silver plating solution (90g / L of cyanide silver and 100g / L of potassium cyanide). L, sodium manganese sulfate 3 g / L, zinc sulfate 10 g / L, potassium cyanide 100 g / L, sodium hydroxide 20 g / L, and the electrolytic plating solution of the quaternary indium alloy electrolytic plating solution (20 g / L of indium sulfate, (Mn), zinc (Sn), and tin (Zn), each having a plating film thickness of 0.01 占 퐉, and then washed and dried to obtain a multilayer A plated lead frame was obtained.

[Example 3]

The lead frame shown in Fig. 2 was subjected to nickel plating, silver plating and silver plating, and quaternary indium alloy electroplating. The lead frame was formed by punching using a copper alloy. The molded lead frame was degreased, cleaned, and subjected to nickel plating with nickel plating solution (500 g / L of sodium hypophosphite, 50 g / L of boric acid and 5 g / L of nickel chloride). The coating thickness of the underlying nickel plating was 0.3 탆. Subsequently, silver plating with a plating film thickness of 1 占 퐉 was performed with a silver plating solution (90g / L of cyanide silver and 100g / L of potassium cyanide). L, zinc chloride 10 g / L, potassium cyanide 100 g / L, sodium hydroxide 20 g / L, and the like were added to the electrolytic plating solution of the four element indium alloy electrolytic plating solution (indium sulfate 20 g / L, sodium tartrate 5 g / (Ni) -Zn (Sn) -Tin (Zn) electrodeposition indium alloy electroplating with a plating film thickness of 0.01 mu m with a thickness of 3 mu m / A plated lead frame was obtained.

The lead frames obtained in Examples 1 to 3 were subjected to initial light reflectance measurement, sulfur discoloration test, light flux reliability evaluation and Au wire bonding property confirmation with the comparative example, and the results of the test analysis and evaluation are shown in Tables 1 to 4 below.

2. Light reflectance measurement

The initial light reflectance was 350 mA, respectively, after injection and packaging of the lead frame of the present invention, and the initial light reflectance due to the light emitted from the LED was measured by a conventional silver- Plated LED package samples were measured as comparative examples.

Table 1 compares the initial light reflectance at the time of light emitting diode (LED) emission by energizing the current after completion of injection and packaging after plating the test sample.

Remarks Applied current 350mA Example 1 99.10% Example 2 97.14% Example 3 98.05% Comparative Example 100%

3. Yellow discoloration test

The sulfur coloration test was carried out in a sulfur gas generating system. A solution of 0.7 g of K ₂ S dissolved in 50 ml of water was placed in a sealed container, and the test sample was placed in a container so as not to be in direct contact with the solution. Then, the sealed container is put in an oven capable of maintaining a constant temperature, and the temperature is set at 50 ° C. After that, the rise of the sample temperature and the color due to humidity and sulphide are visually determined as follows.

In addition,

○ ... Almost no sulphide is recognized on the surface, and the gloss and hue of the silver surface are almost maintained

△ ... Sulfur is slightly recognized on the surface, but the silver surface and gloss are maintained to some extent

× ... Sulfurization proceeds on the surface, and the silver surface does not have gloss and hue

Table 2 shows the results of analyzing the degree of discoloration over time by placing a solution of 0.7 g of K2S in 50 ml of water in an oven together with a test sample in a closed container, maintaining the temperature at 50 ° C. In the example in which the indium alloy plating layer was formed, the luster and the hue of the surface did not change even after 2 hours, and the luster was maintained almost at the same level as the beginning. However, in the comparative example, When 30 minutes have elapsed, it is found that the sulphurization has completely proceeded, the gloss disappears and the color tone disappears.

Kinds Elapsed time 30 minutes 2 hr Example 1 ○ ○ Example 2 ○ ○ Example 3 ○ ○ Comparative Example △ ×

4. Light reflection  Reliability Comparison

In Table 3, after completion of injection and baking after the test sample plating, the test conditions were a LED light emission with an applied current IF = 350 mA in a high temperature and high humidity environment at a temperature of 85 캜 and a humidity of 85% It is.

division Optical reliability over time 0hr 250hr 500 hr 750hr 1000hr Example 1 100% 99.0% 98.9% 97.3% 92.8% Example 2 100% 99.3% 99.1% 98.5% 96.4% Example 3 100% 98.1% 98.0% 96.7% 92.6% Comparative Example 100% 98.5% 88.6% 87.6% 82.4%

As can be seen from Table 3, the optical reliability is much better than the comparative example in which the embodiment was tested with the conventional LED package samples over time. Particularly, although the reduction of the optical reliability is remarkably reduced even after 500 hours have elapsed in the embodiment, the comparative example starts to deteriorate sharply and it can be recognized that the optical reliability difference is remarkably widened by more than 10% when 1000 hours have elapsed.

As described above, the surfaces of various parts obtained by manufacturing a multi-element indium alloy electroplating layer for a light emitting diode (LED), a PCB, or an electric and electronic device part are difficult to be discolored due to reaction with chlorine or sulfur in the atmosphere, will be.

In particular, it is excellent in bonding with gold (Au) wire, and has a luster like silver, and maintains the light reflectance with time. It has been confirmed that there are differences in the properties which contribute to the respective characteristics depending on the metal to be alloyed with indium.

 In the present invention, when the tin and zinc are alloyed with indium and electroplated with a plating layer, it is confirmed that the light reflectance characteristics are excellent.

In addition, all of the examples showed excellent optical conduction property compared with the comparative examples and the optical reliability was excellent when the electroplating was performed with a quaternary indium alloy of indium (In) - manganese (Mn) - zinc (Sn) - tin (Zn) Respectively.

It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined in the appended claims. And will be apparent to those skilled in the art.

101: indium alloy electroplating structure 102: electrically conductive substrate
103: lower plating layer 104: intermediate plating layer
105: indium alloy plating layer
201: Indium alloy plated lead frame for LED
202: After mounting light emitting element and after wire bonding
203: Completion of packaging 204: LED light emitting diode
205: Au wire bonding 206: White resin housing
207: Phosphor and silicone resin 301: PCB for COB LED
302: After mounting light emitting element and after wire bonding
303: Packaging completed
304: Substrate and circuit for LED and indium alloy plated LED
311: PCB for COM LED 312: After mounting light emitting element and after wire bonding
313: Packaging completed
314: Metal parts for silver and indium alloy plated LEDs
315: Circuit parts for silver and indium alloy plated LEDs

Claims (19)

An electrical and electronic device part having a plated layer formed on its surface,
An underlying plating layer formed of nickel (Ni) or copper (Cu) on the surface of the plating support;
An intermediate plating layer formed of gold (Au) or silver (Ag) on the base plating layer; And
And an indium (In) alloy plating layer formed on the intermediate plating layer by electrolytic plating,
The indium (In) alloy plating layer contains 30 to 69 wt% of indium (In), 10 to 30 wt% of tin (Sn), 20 to 59 wt% of zinc (Zn) (In) -manganese (Mn) -stin (Sn) -zinc (Zn)
Electrical and electronic equipment parts having a plated layer excellent in blackness and electric conductivity.
delete delete delete delete delete The method according to claim 1,
Wherein the base plating layer has a thickness of 0.001 to 10 탆 and a coating layer having excellent black color and excellent electrical conductivity.
The method according to claim 1,
Wherein the intermediate plating layer has a thickness of 0.001 to 100 占 퐉 and a coating layer excellent in electrical blackness and electrical conductivity.
The method according to claim 1,
Wherein the indium alloy plating layer has a thickness of 0.0001 to 1.0 占 퐉 and a coating layer excellent in electrical blackness and electrical conductivity.
The method according to claim 1,
Wherein the electric and electronic device parts are provided with a plating layer excellent in the transparency and electrical conductivity in the support chain for mounting the light emitting device.
A method for forming a plating layer on a surface of an electrical and electronic device component according to claim 1,
Forming a base plating layer made of nickel (Ni) or copper (Cu) on the surface of the plating support;
Forming an intermediate plating layer made of gold (Au) or silver (Ag) on the base plating layer; And
And forming an indium (In) alloy plating layer made of indium (In) alloy on the intermediate plating layer by electrolytic plating,
The indium (In) alloy plating layer contains 30 to 69 wt% of indium (In), 10 to 30 wt% of tin (Sn), 20 to 59 wt% of zinc (Zn) (In) -manganese (Mn) -stin (Sn) -zinc (Zn)
A method for forming an electroplating layer having excellent blackness and electric conductivity on electrical and electronic parts.
12. The method of claim 11,
And a step of cleaning the electric and electronic parts before forming the underlying plated layer, and forming a plating layer having excellent anti-blackness and electrical conductivity on the parts of the electric and electronic apparatuses.
12. The method of claim 11,
Wherein the intermediate plating layer is formed by electrolytic plating, and a plating layer having excellent anti-blackness and electrical conductivity is formed on the electric and electronic parts.
12. The method of claim 11,
Wherein the underlying plating layer is plated with nickel (Ni) or copper (Cu) plating solution to form a plating layer having excellent resistance to electrodeposition and electrical conductivity in electric and electronic parts.
12. The method of claim 11,
Wherein the intermediate plating layer is formed by plating a silver plating solution comprising silver cyanide (AgCN) and potassium cyanide (KCN), thereby forming a plating layer having excellent anti-blackness and electrical conductivity.
delete An electroluminescent device comprising an electric and electronic device part manufactured by a method of forming a plating layer having excellent anti-blackness and electric conductivity according to any one of claims 11 to 15.
An electrical and electronic device contact point using the electric and electronic device parts according to claim 1,
A base plating layer formed of nickel (Ni) or copper (Cu) on the surface of the component;
An intermediate plating layer formed of gold (Au) or silver (Ag) on the base plating layer; And
And a plating layer formed on the intermediate plating layer and formed of an indium (In) alloy plating layer and having excellent anti-blackness and electrical conductivity.
19. The method of claim 18,
Wherein said contact point is a contact point of a switch or a contact point of an electric or electronic device part, and has a plating layer excellent in electrical conductivity and electrical conductivity.

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