KR101785916B1 - Organic thin flim transitor, method for manufacturing the same and liquid crystal display device having the same - Google Patents

Abstract

The present invention relates to an organic thin film transistor, a method of manufacturing the same, and a liquid crystal display device including the organic thin film transistor.
An organic thin film transistor according to the present invention includes a substrate formed with a plurality of trenches spaced apart from each other, source and drain electrodes formed in each of the plurality of trenches, and source and drain electrodes formed on the substrate, A gate insulating layer formed on the organic semiconductor layer, and a gate electrode formed on the gate insulating layer.
According to the present invention, by forming the source and drain electrodes in the substrate, the organic semiconductor layer formed on the source and drain electrodes can be formed on the flat substrate, thereby improving the device characteristics of the organic thin film transistor.

Description

TECHNICAL FIELD [0001] The present invention relates to an organic thin film transistor (TFT), a method of manufacturing the same, and a liquid crystal display device having the same.

The present invention relates to an organic thin film transistor, a method of manufacturing the same, and a liquid crystal display device including the organic thin film transistor. More particularly, the present invention relates to an organic thin film transistor having improved interfacial characteristics.

(CRT), a plasma display panel (PDP), a liquid crystal display device (LCD), an organic light emitting diode diode (OLED) are widely studied and used.

Of these flat panel display devices, liquid crystal display devices are most widely used because of their excellent image quality, light weight, thinness, and low power consumption. In addition to mobile type applications such as monitors of notebook computers, televisions and computers And various monitors are being developed.

2. Description of the Related Art In recent years, researches on techniques utilizing an organic semiconductor as an active layer among thin film transistors of a liquid crystal display device have been actively conducted.

Typically, organic semiconductors have been developed by the development of polyacetylene, a conjugated organic polymer that exhibits semiconducting properties, and then, due to the nature of organic materials such as various synthetic methods, ease in film form, flexibility, Functional electronic devices and optical devices as materials.

Among devices using such a conductive polymer, researches on an organic thin film transistor (OTFT) using an organic material as an active layer have been extensively studied.

The organic thin film transistor is structurally similar to the Si-TFT in that the organic material is used instead of Si in the semiconductor region. The organic thin film transistor has flexibility, is capable of using a plastic substrate, has a low driving voltage, .

Here, the efficiency of the organic thin film transistor is affected by the degree of crystallization of the organic semiconductor layer, the charge characteristics at the interface of the organic semiconductor layer, the thin film characteristics of the gate insulating layer, and the carrier injection ability at the interface between the source and drain electrodes and the organic semiconductor layer.

In particular, the threshold voltage and mobility of the organic thin film transistor are greatly affected by the planarization characteristics of the surface.

The organic thin film transistor is divided into a top gate type and a bottom gate type depending on the position of the gate electrode.

1 is a cross-sectional view showing an organic thin film transistor 1 of a bottom gate type.

1, the organic thin film transistor 1 includes a substrate 10, a gate electrode 36, a gate insulating film 55, an organic semiconductor layer 45, and source and drain electrodes 32, and 34 are stacked in this order.

Here, the gate electrode 36, the source electrode 32, and the drain electrode 34 are formed through a conventional photolithography process. For example, a metal layer is laminated on a substrate 10, a photoresist is stacked thereon and developed, and then a metal layer is etched by the developed photoresist pattern to form a gate electrode 36.

When the gate electrode 36 is formed through the photolithography process and the organic semiconductor layer 45 is formed after the gate insulating film 55 is formed on the gate electrode 36, And the organic semiconductor layer 45 formed between the drain electrodes 32 and 34 and the gate insulating film 55 not only deteriorate the interface characteristics with the source and drain electrodes 32 and 34 but also increase the contact resistance .

In addition, crystallization and grain growth of the organic semiconductor layer 45 show a great difference depending on the material and surface condition of the substrate, which is directly related to the performance of the organic thin film transistor. That is, the performance of the organic thin film transistor is directly affected by the surface roughness and surface roughness of the organic semiconductor layer.

For example, relatively large grain boundaries and high crystal growth can be achieved on the surfaces of glass and silica series, while there is a problem that a non-crystallized small grain boundary shape is formed on the surface of a metal.

Therefore, heterogeneous surface structure removal and planarization of the substrate during fabrication of the organic thin film transistor is a major factor for improving the performance of the organic thin film transistor device.

Accordingly, the present invention provides an organic thin film transistor for forming an organic semiconductor layer on a flat surface by forming a plurality of trenches on a substrate to form source and drain electrodes, a manufacturing method thereof, and a liquid crystal display device including the organic thin film transistor .

According to an aspect of the present invention, there is provided an organic thin film transistor comprising: a substrate on which first and second trenches are formed; Source and drain electrodes formed in the first and second trenches, respectively; An organic semiconductor layer formed on the substrate so as to overlap with the source and drain electrodes; A gate insulating layer formed on the organic semiconductor layer, and a gate electrode formed on the gate insulating layer.

And a transfer layer between the source and drain electrodes and the organic semiconductor layer to improve carrier injection efficiency into the organic semiconductor layer.

And the transmission layer is formed inside each of the first and second trenches.

According to another aspect of the present invention, there is provided a method of manufacturing an organic thin film transistor, including: forming first and second trenches corresponding to source and drain electrodes on a substrate; A second step of forming source and drain electrodes in the first and second trenches; A third step of forming an organic semiconductor layer overlying the source and drain electrodes on the substrate; A fourth step of forming a gate insulating film on the organic semiconductor layer; And a fifth step of forming a gate electrode on the gate insulating film.

Wherein the first step includes forming a plurality of etch stoppers on the substrate and forming the first and second trenches by partially etching the substrate using the plurality of etch stoppers as an etching mask .

And forming a transfer layer between the source electrode and the drain electrode and the organic semiconductor layer to improve a carrier injection efficiency into the organic semiconductor layer.

Forming a source and a drain metal layer on the front surface of the substrate and forming a metal oxide layer on the interface by deposition through heat treatment; and performing a surface treatment to planarize the surface of the substrate, And forming a drain electrode and forming a transport layer for improving a carrier injection efficiency on each of the source and drain electrodes.

Forming an organic layer corresponding to the organic semiconductor layer, forming a gate insulating layer on the substrate on which the organic layer is formed, the gate insulating layer corresponding to the gate insulating layer, Forming a gate metal layer corresponding to the gate electrode on the substrate; patterning the organic layer, the gate insulating layer, and the gate metal layer at once to form the organic semiconductor layer, the gate insulating layer, And forming a metal layer.

According to another aspect of the present invention, there is provided a liquid crystal display comprising: a substrate having a plurality of trenches spaced apart from each other; A plurality of gate wirings formed on the substrate in one direction; A plurality of data lines crossing the gate lines perpendicularly to define pixel regions; A source electrode extending in the data line, a drain electrode spaced apart from the source electrode, and an organic semiconductor layer superimposed on the source and drain electrodes, at an intersection where the plurality of gate wirings cross the data line, A gate insulating layer formed on the organic semiconductor layer; An organic thin film transistor formed on the gate insulating film and including a gate electrode integrally formed with the gate wiring; Wherein the pixel electrode is connected to the drain electrode and includes a pixel electrode formed in the pixel region, and the pixel electrode connected to the data line, the source electrode, the drain electrode, and the drain electrode, And an organic thin film transistor formed in the substrate.

Wherein the organic thin film transistor further includes a gate electrode, a gate insulating layer, and a gate contact hole covering the organic semiconductor layer and partially exposing the gate electrode, and a gate wiring metal layer formed on the passivation layer And an organic thin film transistor.

According to the present invention, by forming a plurality of trenches in a substrate and forming source and drain electrodes in each trench, an organic semiconductor layer can be formed on a flat substrate.

Thus, the device performance and flexibility of the organic thin film transistor can be improved.

Particularly, a transfer layer for improving the carrier injection efficiency between each of the source and drain electrodes and the organic semiconductor layer is formed together in the substrate when the source and drain electrodes are formed, thereby reducing the carrier injection barrier and shortening the response speed of the organic thin film transistor .

1 is a sectional view showing an organic thin film transistor of a bottom gate type.
FIGS. 2A to 2F are process cross-sectional views of an organic thin film transistor according to a preferred embodiment of the present invention.
3 is an exploded perspective view schematically showing a liquid crystal display device including an organic thin film transistor according to a preferred embodiment of the present invention.
4 is a cross-sectional view showing the organic thin film transistor of FIG. 3;

The present invention provides an organic thin film transistor capable of eliminating a step caused by an electrode by forming a trench in a substrate and forming source and drain electrodes in the substrate.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

2A to 2F are cross-sectional views illustrating an organic thin film transistor according to a preferred embodiment of the present invention.

The top gate type organic thin film transistor includes source and drain electrodes 132 and 134 formed at predetermined intervals in the substrate 100 as shown in FIG. 2F, and source and drain electrodes 132 and 134 formed between the substrate 100 and the source and drain An organic semiconductor layer 145 formed of an organic material formed on the electrodes 132 and 134, a gate insulating layer 155, and a gate electrode 136.

2A, a plurality of etch stoppers 131 are formed on a substrate 100, a plurality of etch stoppers 131 are formed on the substrate 100, A plurality of trenches corresponding to the trenches are formed as shown in FIG. 2B by selectively etching the substrate 100 using an etching mask.

If the etch stopper 131 is used as an etch mask, a part of the substrate 100 on which the etch stopper 131 is not formed is removed to a predetermined depth to correspond to the source and drain electrodes (132 and 134 in FIG. 2F) A plurality of trenches 131a are formed.

Here, the substrate 100 corresponds to a plastic substrate having flexibility. The plastic substrate may be made of an insulating organic material, for example, a polyethersulphone (PES), a polyacrylate (PAR), a polyetherimide (PEI), a polyethylene naphthalate (PEB) (PET), polyphenylene sulfide (PPS), polyallylate, polyimide, polycarbonate (PC), cellulose triacetate (TAC), cellulose acetate propionate And cellulose acetate propinonate (CAP).

Alternatively, the substrate 100 may be a flexible metal foil substrate. In this case, an insulating layer may be formed on the substrate 100 on which the plurality of trenches 131a are formed.

2C, source and drain metal layers 133 for forming source and drain electrodes (132 and 134 in FIG. 2F) are formed on the entire surface of the substrate 131a on which the plurality of trenches 131a are formed Followed by annealing in an oxidizing atmosphere.

The source and drain metal layers 133 are formed of a conductive metal material such as Au, Cu, Al, Al-Al, Mo, Cr, (IT), indium tin oxide (ITO), titanium (Ti), and neodymium (AlNd), or a combination of copper (Cu) and titanium (Ti), gold (Au) and indium tin oxide And may be formed of a double layer made of molybdenum (Mo), AlNd (neodymium), gold (Au) and indium tin oxide (ITO), ribbed (Mo) and neodymium (AlNd).

When the source and drain metal layers 133 are formed and annealed, metal ions of the source and drain metal layers 133 react with oxygen to be self-oxidized to form a conductive metal oxide film 133a at the interface do.

For example, when copper (cu) is used for the source and drain metal layers 133, copper oxide (CuOx) deposited by the thermal deposition method through annealing is formed as the metal oxide film 133a.

The metal oxide film 133a thus formed corresponds to a transport layer (135 in FIG. 2F) which improves the carrier injection efficiency into the organic semiconductor layer 145 serving as a channel.

The transfer layer 135 of FIG. 2F is positioned between the source and drain electrodes 132 and 134 of FIG. 2F and the organic semiconductor layer 145 of FIG. 2F to improve the characteristics of the organic thin film transistor device .

2D, the surface of the substrate is planarized by performing a dicing process, which is a surface treatment for flattening the surface of the substrate 100 for forming the organic semiconductor layer (145 in FIG. 2F) A source electrode 132 and a drain electrode 134 are formed on each of the plurality of trenches 131a and a transfer layer 135 directly contacting each of the source and drain electrodes 132 and 134 is formed on each of the trenches 131 and 132, Thereby completing formation.

The surface treatment may further include a cleaning treatment and an O 2 ashing treatment using a gas including oxygen.

Thus, the source and drain electrodes 132 and 134 and the transfer layer 135 in direct contact with the source and drain electrodes 132 and 134 are formed in the substrate 100 and the substrate is planarized to form the organic semiconductor layer 145) is formed, the degree of crystallization of the thin film is doubled.

As shown in FIG. 2E, the organic semiconductor layer 145a is formed on the substrate 100 on which the source and drain electrodes 132 and 134 are formed, as a material selected from one of the low molecular organic material groups.

Here, the organic semiconductor layer 145a is formed on the flat substrate 100 as it is formed on the substrate 100 after the surface treatment in FIG. 2D.

Subsequently, a gate insulating layer 155a is formed on the organic semiconductor layer 145a with one or more selected organic insulating material groups.

A gate metal layer 136a is formed on the substrate having the organic semiconductor layer 145a and the gate insulating layer 155a formed thereon.

Here, the organic semiconductor layer 145a may be formed by a spin coating method, a vapor deposition method, or a printing method. As the low molecular organic material for forming the organic semiconductor layer 145a, pentacene, tetracene, anthracene, naphthalene, alpha-6-thiophene, alpha-5-thiophene, alpha-4-thiophene, perylene and its derivatives, rubrene and its derivatives, coronene and derivatives thereof, perylene tetracarboxylic diimide and derivatives thereof, perylene tetracarboxylic dianhydride and derivatives thereof, polythiophenes (PT) And derivatives thereof, polyphenylene vinylene (PPV) and derivatives thereof, polyphenylene and derivatives thereof, polyfluorenes (PFs) and derivatives thereof, polythiophene vinylene polythiophenes vinylene and derivatives thereof, Polythiophenes-heterocyclic compound copolymers and derivatives thereof, phthalocyanine and derivatives thereof containing or not containing metals, pyromellitic dianhydride and derivatives thereof, pyromellitic diimide And derivatives thereof, and the like.

The gate insulating layer 155a may be formed using a deposition method or a printing method. The gate insulating layer 155a may be formed of one of a group of inorganic insulating materials such as silicon oxide, silicon nitride, or the like, or one or more selected from organic insulating material groups such as polystyrene ≪ / RTI >

The gate electrode layer 136a may be formed of a conductive metal material such as Au, Cu, Al, Al alloy, Mo, Cr, (ITO), titanium (Ti), and neodymium (AlNd), or may be formed of copper (Cu), titanium (Ti), gold (Au), indium tin oxide (ITO), molybdenum Mo), AlNd (neodymium), gold (Au) and indium tin oxide (ITO), and ribbed (Mo) and neodymium (AlNd).

The organic semiconductor layer 145a, the gate insulating layer 155a and the gate metal layer 136a are collectively patterned to form the organic semiconductor layer 145a, the gate insulating layer 155a, the gate electrode 136a to form the organic thin film transistor.

By patterning the organic semiconductor layer 145a, the gate insulating layer 155a and the gate metal layer 136a at one time, the cross sections of the organic semiconductor layer 145a, the gate insulating film 155a and the gate electrode 136a coincide with each other do.

3 is an exploded perspective view schematically showing a liquid crystal display device having an organic thin film transistor according to the present invention.

The liquid crystal display device 110 includes an array substrate and color filter substrates 100a and 122, which are bonded to each other with a liquid crystal layer 105 interposed therebetween.

The array substrate 100a includes a plurality of gate lines 120 extending in a first direction on a first substrate and a plurality of data lines 130 extending in a second direction perpendicular to the first direction, The gate line 120 and the data line 130 of the pixel region 130 intersect with each other to define a plurality of pixel regions P. Here, the first substrate may be a flexible plastic substrate or a metal foil substrate.

The OTFT OT and the pixel electrode 170 are formed for each of the plurality of pixel regions P and the OT thin film transistor OT includes a plurality of gate wirings 120, And the data lines 130, and are connected in a one-to-one correspondence with the pixel electrodes 170 provided in the respective pixel regions P.

The organic thin film transistor OT includes a source electrode, a drain electrode spaced apart from the source electrode, an organic semiconductor layer formed on the source and drain electrodes in superposition with the source and drain electrodes, And a gate electrode over the gate insulating film. At this time, the source and drain electrodes are formed in a trench formed in the substrate.

The gate wiring 120 and the data wiring 130 are excellent in electric conductivity and mainly use a resistivity metal.

The color filter substrate 122, which is also referred to as an upper substrate, facing the array substrate 100a having such a structure, is electrically connected to the gate wiring 120, the data wiring 130, the organic thin film transistor OT Shaped black matrix 125 that covers each pixel region P so as to expose the pixel electrode 170 while covering the non-display elements of the non-display element.

Green (G), and blue (B) color filter layers 126, which are sequentially and repeatedly arranged in correspondence to the respective pixel regions P, are formed in these lattices, A transparent common electrode 128 is provided over the entire surface of the matrix 125 and the red, green and blue color filter layers 126.

Although not shown, in order to prevent the outflow of the liquid crystal layer 105 interposed between the array substrate 100a and the color filter substrate 122, a space between the array substrate 100a and the color filter substrate 122 The array substrate 100a and the color filter substrate 122 are bonded together by forming a seal pattern (not shown) printed along the outermost edge of the liquid crystal panel 110 to form the liquid crystal panel 110. [

First and second polarizing plates 102 and 104 are provided on the outer surfaces of the array substrate 100a and the color filter substrate 122, respectively. A backlight including a light source is disposed on the back surface of the liquid crystal panel 110, -light unit (not shown).

Accordingly, light is supplied by a backlight unit (not shown), and on / off signals of the organic thin film transistor OT are sequentially scanned and applied to the gate wiring 120, The liquid crystal molecules between the common electrode 128 and the pixel electrode 170 are driven by the vertical electric field between the common electrode 128 and the pixel electrode 170. As a result, So that various images can be displayed.

FIG. 4 is a cross-sectional view showing the organic thin film transistor of FIG. 3, and FIGS. 2A to 2F are referred to.

 4, the organic thin film transistor OT includes source and drain electrodes 132 and 134 formed at a predetermined distance in the substrate 100, and a plurality of source and drain electrodes 132 and 134, An organic semiconductor layer 145 formed on the substrate 100 and overlapped with the source and drain electrodes 132 and 134, and an organic semiconductor layer 145 formed on the organic semiconductor layer 145. [ A gate electrode 136 formed on the gate insulating film 155 and a gate contact hole HO covering the gate electrode 136 and partially exposing the gate electrode 136 A passivation layer 160 and a gate wiring metal layer 120a formed on the passivation layer 160. [

The organic thin film transistor OT is formed at the intersection of the gate wiring (120 in FIG. 3) and the data wiring (130 in FIG. 3).

Here, the source electrode 132 of the organic thin film transistor OT is connected to the data line (130 of FIG. 3), and the drain electrode 134 is connected to the pixel electrode (170 of FIG. 3).

2A, an etch stopper 131 is formed on a substrate 100 and a trench 131a corresponding to the source and drain electrodes 132 and 134 is formed in the substrate 100 The data line 130 is formed so that the width of the trench 131a is wide and is in direct contact with the source electrode 132. The pixel electrode 170 is in direct contact with the drain electrode 134, The substrate 100 may be provided with a space.

In this way, the source electrode 132, the data wiring 130 connected to the source electrode 132, the drain electrode 134 formed apart from the source electrode 132, and the drain electrode 134 connected to the drain electrode 134 The electrodes 170 are formed on the same line in the substrate 100, but the present invention is not limited thereto and can be variously changed.

The pixel electrode 170 is formed by depositing indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) on the substrate 100 on which the source and drain electrodes 132 and 134 and the transport layer 135 are formed. ) And a pattern of the transparent conductive metal material may be formed so as to be positioned in the pixel region P while being in direct contact with the drain electrode 134 in the substrate 100. Here, the surface treatment process of FIG. 2D for planarizing the substrate can be performed even after the pixel electrode 170 is formed.

Then, the organic semiconductor layer 145, the gate insulating layer 155, and the gate electrode 136 are formed as shown in FIGS. 2E and 2F.

Thereafter, the passivation layer 160 is formed on the substrate 100 having the gate electrode 136 formed thereon. Here, the passivation layer 160 is formed to cover the gate electrode 136, the gate insulating layer 155, and the organic semiconductor layer 145, and may be composed of an organic insulating material and an inorganic insulating material.

A gate contact hole HO for partially exposing the gate electrode 136 is formed by patterning the passivation layer 160. The passivation layer 160 is formed on the passivation layer 160 by using a metal such as Cr, molybdenum (Mo), or aluminum alloy (AlNd) A selected one of the conductive metal groups may be deposited to form a gate wiring metal layer and patterned to form a gate wiring metal layer 120a connected to the gate wiring 120. [

As described above, the organic thin film transistor according to the present invention has a structure in which a plurality of trenches are formed in a substrate to form source and drain electrodes in each trench, and a transfer layer for improving carrier injection efficiency between each of the source and drain electrodes and the organic semiconductor layer Is formed at the time of forming the source and drain electrodes, the device characteristics of the organic thin film transistor can be improved.

As described above, by forming the source and drain electrodes in the substrate to form the organic semiconductor layer on the flat substrate, it is possible to remove the heterogeneous surface structure of the substrate, thereby doubling the crystallization degree of the organic semiconductor layer, And the efficiency of carrier injection from the drain electrode to the organic semiconductor layer is increased, so that the performance and flexibility of the device can be improved.

The embodiments of the present invention as described above are merely illustrative, and those skilled in the art can make modifications without departing from the gist of the present invention. Accordingly, the protection scope of the present invention includes modifications of the present invention within the scope of the appended claims and equivalents thereof.

100: substrate 131: etch stopper
131a: trench 132: source electrode
134: drain electrode 136: gate electrode
145: organic semiconductor layer 155: gate insulating film
160: protective film 170: pixel electrode

Claims (10)

A substrate on which first and second trenches are formed;
Source and drain electrodes formed in the first and second trenches, respectively;
An organic semiconductor layer formed on the substrate so as to overlap with the source and drain electrodes;
A gate insulating layer formed on the organic semiconductor layer;
A gate electrode formed on the gate insulating film;
Between the source and drain electrodes and the organic semiconductor layer
A transport layer made of a conductive metal oxide film for improving carrier injection efficiency into the organic semiconductor layer;
And an organic thin film transistor.
delete The method according to claim 1,
The transport layer
Wherein the first and second trenches are formed in the first and second trenches, respectively.
A first step of forming first and second trenches corresponding to the source and drain electrodes, respectively, on the substrate;
A second step of forming source and drain electrodes in the first and second trenches, and a transfer layer on each of the source and drain electrodes;
A third step of forming an organic semiconductor layer overlying the transfer layer on the substrate;
A fourth step of forming a gate insulating film on the organic semiconductor layer;
A fifth step of forming a gate electrode on the gate insulating film,
Lt; / RTI >
The second step
Forming source and drain metal layers on the front surface of the substrate and forming a metal oxide film on the interface by vapor deposition through heat treatment;
Performing a surface treatment to planarize the surface of the substrate to form the source and drain electrodes in the substrate and forming a transport layer for improving the carrier injection efficiency on each of the source and drain electrodes, A method of manufacturing a transistor.
5. The method of claim 4,
The first step
Forming a plurality of etch stoppers on the substrate;
And forming the first and second trenches by partially etching the substrate using the plurality of etch stoppers as an etching mask.
delete delete A first step of forming first and second trenches corresponding to the source and drain electrodes, respectively, on the substrate;
A second step of forming source and drain electrodes in the first and second trenches;
A third step of forming an organic semiconductor layer overlying the source and drain electrodes on the substrate;
A fourth step of forming a gate insulating film on the organic semiconductor layer;
A fifth step of forming a gate electrode on the gate insulating film,
Lt; / RTI >
The third, fourth, fifth,
Forming an organic layer corresponding to the organic semiconductor layer;
Forming a gate insulating layer corresponding to the gate insulating layer on the substrate on which the organic layer is formed
Forming a gate metal layer corresponding to the gate electrode on the substrate on which the gate insulating layer is formed;
Forming the organic semiconductor layer, the gate insulating layer, and the gate metal layer by patterning the organic layer, the gate insulating layer, and the gate metal layer all at once.
A substrate having a plurality of trenches spaced apart from each other;
A plurality of gate wirings formed on the substrate in one direction;
A plurality of data lines crossing the gate lines perpendicularly to define pixel regions;
A source electrode extending in the data line, a drain electrode spaced apart from the source electrode, and an organic semiconductor layer superimposed on the source and drain electrodes, at an intersection where the plurality of gate wirings cross the data line, A gate insulating layer formed on the organic semiconductor layer; An organic thin film transistor formed on the gate insulating film and including a gate electrode integrally formed with the gate wiring;
And a pixel electrode connected to the drain electrode and configured in the pixel region,
And the pixel electrode connected to the data line, the source electrode, the drain electrode, and the drain electrode connected to the data line are formed in the plurality of trenches, respectively.
10. The method of claim 9,
The organic thin film transistor
An organic thin film transistor including a gate electrode, a gate insulating layer, and a gate contact hole covering the organic semiconductor layer and partially exposing the gate electrode; and a gate wiring metal layer formed on the passivation layer .

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