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KR101758548B1 - 질화갈륨 자립 기판, 발광 소자 및 이들의 제조 방법 - Google Patents

질화갈륨 자립 기판, 발광 소자 및 이들의 제조 방법 Download PDF

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Publication number
KR101758548B1
KR101758548B1 KR1020157035267A KR20157035267A KR101758548B1 KR 101758548 B1 KR101758548 B1 KR 101758548B1 KR 1020157035267 A KR1020157035267 A KR 1020157035267A KR 20157035267 A KR20157035267 A KR 20157035267A KR 101758548 B1 KR101758548 B1 KR 101758548B1
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KR
South Korea
Prior art keywords
gallium nitride
single crystal
substrate
self
crystal
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Expired - Fee Related
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KR1020157035267A
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English (en)
Korean (ko)
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KR20160053846A (ko
Inventor
모리미치 와타나베
준 요시카와
츠토무 나나타키
가츠히로 이마이
도모히코 스기야마
다카시 요시노
유키히사 다케우치
게이 사토
Original Assignee
엔지케이 인슐레이터 엘티디
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Priority claimed from US14/499,688 external-priority patent/US9312446B2/en
Application filed by 엔지케이 인슐레이터 엘티디 filed Critical 엔지케이 인슐레이터 엘티디
Publication of KR20160053846A publication Critical patent/KR20160053846A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H01L33/02—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • H01L33/007—
    • H01L33/06—
    • H01L33/18—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
KR1020157035267A 2014-09-29 2015-06-25 질화갈륨 자립 기판, 발광 소자 및 이들의 제조 방법 Expired - Fee Related KR101758548B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/499,688 2014-09-29
US14/499,688 US9312446B2 (en) 2013-05-31 2014-09-29 Gallium nitride self-supported substrate, light-emitting device and manufacturing method therefor
PCT/JP2015/068391 WO2016051890A1 (ja) 2014-09-29 2015-06-25 窒化ガリウム自立基板、発光素子及びそれらの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020177018793A Division KR102172356B1 (ko) 2014-09-29 2015-06-25 질화갈륨 자립 기판, 발광 소자 및 이들의 제조 방법

Publications (2)

Publication Number Publication Date
KR20160053846A KR20160053846A (ko) 2016-05-13
KR101758548B1 true KR101758548B1 (ko) 2017-07-14

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KR1020157035267A Expired - Fee Related KR101758548B1 (ko) 2014-09-29 2015-06-25 질화갈륨 자립 기판, 발광 소자 및 이들의 제조 방법
KR1020177018793A Active KR102172356B1 (ko) 2014-09-29 2015-06-25 질화갈륨 자립 기판, 발광 소자 및 이들의 제조 방법

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Country Status (3)

Country Link
KR (2) KR101758548B1 (zh)
CN (1) CN105658849B (zh)
WO (1) WO2016051890A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6846913B2 (ja) * 2016-11-11 2021-03-24 日本碍子株式会社 広波長域発光素子および広波長域発光素子の作製方法
CN108242385B (zh) * 2016-12-23 2021-03-12 比亚迪股份有限公司 生长氮化镓的方法、氮化镓外延结构及半导体器件
CN106711023A (zh) * 2016-12-29 2017-05-24 苏州纳维科技有限公司 Iii族氮化物衬底及其制备方法
WO2018179240A1 (ja) * 2017-03-30 2018-10-04 日本碍子株式会社 アルミナ結晶及びその製法
JP7159449B2 (ja) * 2019-03-28 2022-10-24 日本碍子株式会社 下地基板及びその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004359495A (ja) 2003-06-04 2004-12-24 Ngk Insulators Ltd エピタキシャル膜用アルミナ基板
JP2009073710A (ja) 2007-09-25 2009-04-09 Panasonic Corp 窒化ガリウム基板の製造方法、および窒化ガリウム基板ならびに半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3410863B2 (ja) * 1995-07-12 2003-05-26 株式会社東芝 化合物半導体装置及び化合物半導体発光装置
TW428331B (en) 1998-05-28 2001-04-01 Sumitomo Electric Industries Gallium nitride single crystal substrate and method of producing the same
EP1806770A4 (en) * 2005-07-21 2009-02-25 Sumitomo Electric Industries GALLIUMNITRIDWAFER
JP2007056164A (ja) * 2005-08-25 2007-03-08 Univ Nagoya 発光層形成用基材、発光体及び発光物質
JP4341702B2 (ja) * 2007-06-21 2009-10-07 住友電気工業株式会社 Ｉｉｉ族窒化物系半導体発光素子
JP2009091175A (ja) * 2007-10-04 2009-04-30 Sumitomo Electric Ind Ltd ＧａＮエピタキシャル基板、半導体デバイス、ＧａＮエピタキシャル基板及び半導体デバイスの製造方法
JP2011121815A (ja) * 2009-12-10 2011-06-23 Sumitomo Electric Ind Ltd 単結晶の製造方法
JP2012184144A (ja) 2011-03-07 2012-09-27 Tokuyama Corp 窒化ガリウム結晶積層基板及びその製造方法
CN102208331B (zh) * 2011-04-11 2012-09-19 青岛铝镓光电半导体有限公司 晶体生长方法及衬底的制作方法
WO2014034338A1 (ja) * 2012-08-30 2014-03-06 日本碍子株式会社 複合基板、その製造方法、１３族元素窒化物からなる機能層の製造方法および機能素子
WO2014192911A1 (ja) * 2013-05-31 2014-12-04 日本碍子株式会社 窒化ガリウム自立基板、発光素子及びそれらの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004359495A (ja) 2003-06-04 2004-12-24 Ngk Insulators Ltd エピタキシャル膜用アルミナ基板
JP2009073710A (ja) 2007-09-25 2009-04-09 Panasonic Corp 窒化ガリウム基板の製造方法、および窒化ガリウム基板ならびに半導体装置

Also Published As

Publication number Publication date
CN105658849B (zh) 2018-09-14
KR102172356B1 (ko) 2020-10-30
KR20160053846A (ko) 2016-05-13
KR20170083644A (ko) 2017-07-18
WO2016051890A1 (ja) 2016-04-07
CN105658849A (zh) 2016-06-08

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