KR101758347B1 - 정전 척 및 리페어 방법 - Google Patents
정전 척 및 리페어 방법 Download PDFInfo
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- KR101758347B1 KR101758347B1 KR1020160097998A KR20160097998A KR101758347B1 KR 101758347 B1 KR101758347 B1 KR 101758347B1 KR 1020160097998 A KR1020160097998 A KR 1020160097998A KR 20160097998 A KR20160097998 A KR 20160097998A KR 101758347 B1 KR101758347 B1 KR 101758347B1
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- plate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
도 2는 본 기술의 일 실시예에 의한 정전 척의 결합 단면도이다.
도 3은 본 기술의 일 실시예에 의한 정전 척의 상부 평면도이다.
도 4는 본 기술의 일 실시예에 의한 정전 척의 저부 평면도이다.
도 5는 본 기술의 다른 실시예에 의한 정전 척의 분해 단면도이다.
도 6은 본 기술의 다른 실시예에 의한 정전 척의 결합 단면도이다.
도 7 내지 도 10은 본 기술의 일 실시예에 의한 정전 척 리페어 방법을 설명하기 위한 단면도이다.
110, 210, 310, 310A : 하부 플레이트
120, 220, 320, 420 : 상부 플레이트
140, 240, 340, 440 : 전극
Claims (14)
- 삭제
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- 삭제
- 하부 플레이트, 상부 플레이트 및 상기 하부 플레이트와 상부 플레이트 사이에 형성된 제 1 전극을 구비하며, 상기 하부 플레이트, 상기 제 1 전극 및 상기 상부 플레이트를 관통하여 복수의 핀홀이 형성된 리페어 대상 정전 척이 제공되는 단계;
상기 상부 플레이트 및 상기 제 1 전극을 제거하여 리페어용 하부 플레이트를 형성하는 단계;
상기 리페어용 하부 플레이트에 형성된 상기 핀홀의 구경을 확장하여 확장된 핀홀을 형성하는 단계;
상기 하부 플레이트 상면에 체결되는 평판부와 상기 확장된 핀홀 내에 체결되는 핀홀 보호부를 구비하고, 제 2 전극이 가둠구조로 형성된 리페어용 상부 플레이트를 제조하는 단계; 및
상기 확장된 핀홀 내에 상기 핀홀 보호부가 체결되도록 상기 리페어용 하부 플레이트와 상기 리페어용 상부 플레이트를 결합하는 단계;
를 포함하는 정전 척의 리페어 방법. - 제 9 항에 있어서,
상기 리페어용 하부 플레이트를 형성하는 단계는, 상기 리페어용 하부 플레이트의 외주에 상기 상면으로부터 지정된 깊이를 갖는 단차부를 형성하는 단계를 더 포함하고,
상기 리페어용 상부 플레이트를 제조하는 단계는, 상기 평판부의 외주로부터 수직 연장되어 상기 단차부에 체결되는 측면부를 형성하는 단계를 더 포함하는 정전 척의 리페어 방법. - 제 9 항에 있어서,
상기 핀홀 보호부는 상기 하부 플레이트와 상기 상부 플레이트 간의 경계면을 커버할 수 있는 길이로 형성되는 정전 척의 리페어 방법. - 제 9 항에 있어서,
상기 리페어용 하부 플레이트를 형성하는 단계는, 상기 리페어용 하부 플레이트의 에지를 지정된 폭으로 제거하는 단계를 더 포함하고,
상기 리페어용 상부 플레이트를 형성하는 단계는, 상기 리페어용 하부 플레이트의 외주 전체를 감싸도록 체결되는 측면부를 형성하는 단계를 더 포함하는 정전 척의 리페어 방법. - 제 9 항에 있어서,
상기 리페어용 상부 플레이트는 무기재료를 포함하는 세라믹 소재로 형성되는 정전 척의 리페어 방법. - 제 9 항에 있어서,
상기 리페어용 상부 플레이트를 형성하는 단계는 핫 프레스 방식, 그린 시트 방식, 압축 성형 방식, 소성 방식 중에서 선택된 방식에 의해 상기 제 2 전극을 가둠구조로 형성하는 단계를 더 포함하는 정전 척의 리페어 방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020160097998A KR101758347B1 (ko) | 2016-08-01 | 2016-08-01 | 정전 척 및 리페어 방법 |
CN201710629425.2A CN107680930B (zh) | 2016-08-01 | 2017-07-28 | 静电吸盘及修理方法 |
TW106125721A TWI627702B (zh) | 2016-08-01 | 2017-07-31 | 靜電吸盤的修理方法 |
Applications Claiming Priority (1)
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KR1020160097998A KR101758347B1 (ko) | 2016-08-01 | 2016-08-01 | 정전 척 및 리페어 방법 |
Publications (1)
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KR101758347B1 true KR101758347B1 (ko) | 2017-07-18 |
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KR1020160097998A Active KR101758347B1 (ko) | 2016-08-01 | 2016-08-01 | 정전 척 및 리페어 방법 |
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KR (1) | KR101758347B1 (ko) |
CN (1) | CN107680930B (ko) |
TW (1) | TWI627702B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023101168A1 (ko) * | 2021-12-01 | 2023-06-08 | 주식회사 유진테크 | 리프트핀 프로텍션 어셈블리 및 기판 처리 장치 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113782479A (zh) * | 2021-07-27 | 2021-12-10 | 君原电子科技(海宁)有限公司 | 一种静电吸盘基座的修复方法 |
Citations (2)
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JP2003243492A (ja) | 2003-02-19 | 2003-08-29 | Hitachi High-Technologies Corp | ウエハ処理装置とウエハステージ及びウエハ処理方法 |
JP2009302347A (ja) * | 2008-06-13 | 2009-12-24 | Shinko Electric Ind Co Ltd | 静電チャック及び基板温調固定装置 |
Family Cites Families (11)
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TW277139B (ko) * | 1993-09-16 | 1996-06-01 | Hitachi Seisakusyo Kk | |
US6159055A (en) * | 1998-07-31 | 2000-12-12 | Applied Materials, Inc. | RF electrode contact assembly for a detachable electrostatic chuck |
US6535372B2 (en) * | 2001-06-20 | 2003-03-18 | Applied Materials, Inc. | Controlled resistivity boron nitride electrostatic chuck apparatus for retaining a semiconductor wafer and method of fabricating the same |
US7697260B2 (en) * | 2004-03-31 | 2010-04-13 | Applied Materials, Inc. | Detachable electrostatic chuck |
JP4425850B2 (ja) * | 2005-11-07 | 2010-03-03 | 日本碍子株式会社 | 基板載置部材の分離方法及び再利用方法 |
CN101276071A (zh) * | 2007-03-30 | 2008-10-01 | 财团法人工业技术研究院 | 缺陷修补装置及靶材结构 |
JP4450106B1 (ja) * | 2008-03-11 | 2010-04-14 | 東京エレクトロン株式会社 | 載置台構造及び処理装置 |
US7947523B2 (en) * | 2008-04-25 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing photoelectric conversion device |
KR101286724B1 (ko) * | 2011-10-17 | 2013-07-18 | (주)제니스월드 | 분할 엠보싱 구조 정전척 |
WO2013162641A1 (en) * | 2012-04-26 | 2013-10-31 | Applied Materials, Inc. | Methods and apparatus toward preventing esc bonding adhesive erosion |
WO2014157082A1 (ja) * | 2013-03-29 | 2014-10-02 | 東京応化工業株式会社 | 貼付方法 |
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2016
- 2016-08-01 KR KR1020160097998A patent/KR101758347B1/ko active Active
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2017
- 2017-07-28 CN CN201710629425.2A patent/CN107680930B/zh active Active
- 2017-07-31 TW TW106125721A patent/TWI627702B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2003243492A (ja) | 2003-02-19 | 2003-08-29 | Hitachi High-Technologies Corp | ウエハ処理装置とウエハステージ及びウエハ処理方法 |
JP2009302347A (ja) * | 2008-06-13 | 2009-12-24 | Shinko Electric Ind Co Ltd | 静電チャック及び基板温調固定装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023101168A1 (ko) * | 2021-12-01 | 2023-06-08 | 주식회사 유진테크 | 리프트핀 프로텍션 어셈블리 및 기판 처리 장치 |
Also Published As
Publication number | Publication date |
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CN107680930B (zh) | 2021-10-08 |
TW201806071A (zh) | 2018-02-16 |
CN107680930A (zh) | 2018-02-09 |
TWI627702B (zh) | 2018-06-21 |
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