KR101740748B1 - 분산된 기공 구조를 갖는 cmp패드 및 그 제조방법 - Google Patents
분산된 기공 구조를 갖는 cmp패드 및 그 제조방법 Download PDFInfo
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- KR101740748B1 KR101740748B1 KR1020120126927A KR20120126927A KR101740748B1 KR 101740748 B1 KR101740748 B1 KR 101740748B1 KR 1020120126927 A KR1020120126927 A KR 1020120126927A KR 20120126927 A KR20120126927 A KR 20120126927A KR 101740748 B1 KR101740748 B1 KR 101740748B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
본 발명에 따르면, 화학적 기계적 연마 패드에 대한 발명으로 고분자 매트릭스 내에 반응기 교반에 의한 기공형성을 조절하며, 고경도 패드에서 균일한 기공으로 연마효?? 및 웨이퍼의 평탄도를 극대화 할 수 있을 뿐만 아니라 안정적인 기공형성으로 고집적화되고 세분화된 현재 공정에서의 문제로 대두되는 디펙(defect)과 디싱(dishing), 그리고 낮은 연마 속도 문제 등을 해결할 수 있다.
Description
도 2 내지 4는 본 발명의 일 실시예에 따른 우레탄 프리폴리머와 경화제의 혼합 방식을 설명하는 도면이다.
도 5는 연마속도의 비교 그래프이다.
도 6은 본 발명에 따라 자연기공이 형성된 CMP 패드와, 질소를 인위적으로 인가하여 형성된, 평균 직경 200㎛ 이상의 기공 형성 CMP 패드(비교예 2)의 2분 연마 후 웨이퍼 두께 분포를 비교한 그래프이다.
Claims (5)
- 우레탄 프리폴리머 및 경화제를 반응기에 혼입하는 단계;
상기 반응기 내에서 우레탄 프리폴리머 및 경화제를 대기압 조건에서 소정 시간 동안 교반하여 혼합시키는 단계; 및
상기 혼합된 혼합물을 경화시키는 단계를 포함하며, 상기 교반에 따라 상기 혼합물에는 20 내지 200㎛ 직경을 가지며, 공극률이 10 내지 30%인 기공이 형성되며,
상기 혼합시키는 단계에서, 상기 우레탄 프리폴리머 및 경화제의 혼합물 일부는 상기 반응기 내에서 수평으로 연장되는 회전축에 의해 회전하고 상부가 상기 혼합물 위로 노출되는 스크루 블레이드의 회전에 의해 상기 반응기의 수직으로 상승된 후 공기와 접촉하여 낙하되는 방식으로 혼합되는 것을 특징으로 하는 CMP 패드 제조방법. - 삭제
- 제 1항에 있어서,
상기 우레탄 프리폴리머 및 경화제의 혼합물은 상기 반응기 내에 형성된 미세 채널을 관통함에 따라 기공 크기가 제어되는 것을 특징으로 하는 CMP 패드 제조방법. - 제 1항 또는 제 3항에 따라 제조된 CMP 패드.
- 제 4항에 있어서,
상기 CMP 패드는 20 내지 200㎛ 직경을 가지는 기공을 가지며, 상기 기공의 공극률은 10 내지 30%인 것을 특징으로 하는 CMP 패드.
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KR1020120126927A KR101740748B1 (ko) | 2012-11-09 | 2012-11-09 | 분산된 기공 구조를 갖는 cmp패드 및 그 제조방법 |
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KR1020120126927A KR101740748B1 (ko) | 2012-11-09 | 2012-11-09 | 분산된 기공 구조를 갖는 cmp패드 및 그 제조방법 |
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KR20140060161A KR20140060161A (ko) | 2014-05-19 |
KR101740748B1 true KR101740748B1 (ko) | 2017-06-08 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008512006A (ja) * | 2004-09-01 | 2008-04-17 | キャボット マイクロエレクトロニクス コーポレイション | 微小孔性領域を有する磨きパッド |
KR100838673B1 (ko) * | 2002-05-07 | 2008-06-16 | 도요 고무 고교 가부시키가이샤 | 연마 패드용 폴리우레탄 발포체의 제조 방법, 폴리우레탄 발포체, 및 연마 패드용 폴리우레탄 발포체의 제조 장치 |
JP2008238399A (ja) * | 1992-08-19 | 2008-10-09 | Rohm & Haas Electronic Materials Cmp Holdings Inc | 研磨パッド |
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2012
- 2012-11-09 KR KR1020120126927A patent/KR101740748B1/ko active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008238399A (ja) * | 1992-08-19 | 2008-10-09 | Rohm & Haas Electronic Materials Cmp Holdings Inc | 研磨パッド |
KR100838673B1 (ko) * | 2002-05-07 | 2008-06-16 | 도요 고무 고교 가부시키가이샤 | 연마 패드용 폴리우레탄 발포체의 제조 방법, 폴리우레탄 발포체, 및 연마 패드용 폴리우레탄 발포체의 제조 장치 |
JP2008512006A (ja) * | 2004-09-01 | 2008-04-17 | キャボット マイクロエレクトロニクス コーポレイション | 微小孔性領域を有する磨きパッド |
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