KR101737828B1 - Fiber type transistor with ionic elastomer dielectric and method for manufacturing the same - Google Patents

Abstract

The ionic elastic dielectric based fiber-based transistor of the present invention comprises: a first fiber element formed by coating a semiconductor active material on a conductive core fiber and sequentially winding conductive fibers; And a second fibrous element coated with an ionic elastic dielectric layer on the conductive core fiber. At this time, the first fiber element and the second fiber element are arranged to cross each other.

Description

FIELD OF THE INVENTION [0001] The present invention relates to an ionic elastic dielectric-based fiber type transistor and a fabrication method thereof. BACKGROUND OF THE INVENTION < RTI ID =

The present invention relates to an ionic elastic dielectric-based fiber-type transistor and a method of manufacturing the same.

Recently, attention has been focused on smart wearable electronic devices. Flexible dielectrics, conductors, and semiconductors are needed to implement wearable electronic devices, and new materials are being studied. There is also a growing interest in not only new materials, but also part geometry, efficient devices and new element processing methods.

Research has been conducted on a fiber type device that is excellent in bending and deformation characteristics and can operate smoothly even in a deformed state. However, research on fiber-type devices up to now has focused on super capacitors and batteries that are easy to structure. Further, in order to realize a fiber-type device, there is a problem that a complicated process such as lithography or deposition is required in the process of manufacturing or requiring a substrate in the form of fiber or fabric.

On the other hand, in relation to the fiber material and the fiber structure for exploiting the characteristics of the wearable fiber in relation to the geometrical structure of the component, Korean Patent Laid-Open Publication No. 10-2013-0103835 (entitled: ≪ / RTI > discloses a manufacturing method for constructing an active drive display by applying driver fibers and fibers thereof. Through such a technique, a large display can be manufactured by combining conductive fibers in a woven manner.

However, such a method using a conductive fiber requires a complicated process such as patterning or lithography in order to form an array, and a high driving voltage is required.

Some embodiments of the present invention provide fiber-type transistors that can be made large by applying a fiber process, have high productivity, and a method of manufacturing the same.

It should be understood, however, that the technical scope of the present invention is not limited to the above-described technical problems, and other technical problems may exist.

According to a first aspect of the present invention, there is provided an ionic elastic dielectric based fiber-based transistor comprising a conductive core fiber coated with a semiconductor active material, Fiber element; And a second fibrous element coated with an ionic elastic dielectric layer on the conductive core fiber. At this time, the first fiber element and the second fiber element are arranged to cross each other.

According to a second aspect of the present invention, there is provided an ionic elastic dielectric based fiber-based transistor array comprising: a plurality of first fiber elements formed by coating a semiconductor active material on conductive core fibers and sequentially winding conductive fibers; And a plurality of second fibrous elements coated with an ionic elastic dielectric layer on the conductive core fiber. At this time, the plurality of first fiber elements and the plurality of second fibrous elements are woven crosswise.

 According to a third aspect of the present invention, there is provided a method of fabricating an ionic elastic dielectric based fiber-based transistor, comprising: coating a semiconductor active material on a conductive core fiber, sequentially forming a conductive fiber, And crossing the second fibrous element formed by coating the ionic elastic dielectric layer.

According to the above-mentioned object of the present invention, it is possible to fabricate a fiber-type transistor having a large area and high productivity by applying a fiber process itself without using a fiber or a fabric as a substrate.

Some embodiments of the present invention also use an ionic elastic dielectric to induce a scale of carriers in the semiconductor layer through the movement of ions within the ionic elastomer layer when a voltage is applied. Therefore, if the gate electrode is in contact with the dielectric layer, it is possible to drive the device by making the carrier scale of the semiconductor layer possible, and it is easy to realize the device in an array form.

1 is a conceptual diagram of an ionic elastic dielectric based fiber-based transistor according to an embodiment of the present invention.
FIG. 2 is a flowchart illustrating a method of fabricating an ionic elastic dielectric-based fiber-type transistor according to one embodiment of the present invention.
3 is a view for explaining a method of manufacturing a first fibrillated element according to an embodiment of the present invention.
4 is a flowchart illustrating a method of manufacturing a first fibrillated filament according to an embodiment of the present invention.
5 is a view for explaining a method of manufacturing a second fibrous element according to an embodiment of the present invention.
6 is a flowchart illustrating a method of manufacturing a second fibrillator according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, which will be readily apparent to those skilled in the art. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and similar parts are denoted by like reference characters throughout the specification.

Throughout the specification, when a part is referred to as being "connected" to another part, it includes not only "directly connected" but also "electrically connected" with another part in between . Also, when a part is referred to as "including " an element, it does not exclude other elements unless specifically stated otherwise.

An ionic dielectric according to an embodiment of the present invention includes an ionic material that can be used as a dielectric material. In one embodiment of the present invention, an ionic dielectric layer comprising an elastic polymeric compound and an ionic dielectric is used, but the polymeric material used as the matrix is not limited to silicon-based inorganic materials, ceramics, organic materials ≪ / RTI >

In addition, the fiber processes (hereinafter referred to as weaving, spinning, spinning, coater, etc.) used in the present invention are similar to those used in producing actual fibers. One embodiment of the present invention has fabricated source, gate, and drain electrodes using a conductive material by a fiber processing method. At this time, ionic elastic dielectrics were used together to function as a fiber type transistor.

Hereinafter, an ionic elastic dielectric-based fiber type transistor according to an embodiment of the present invention and a method of manufacturing the same will be described in detail with reference to the drawings.

1 is a conceptual diagram of an ionic elastic dielectric based fiber-based transistor according to an embodiment of the present invention.

First, as shown in FIG. 1 (a), an ionic elastic dielectric-based fiber type transistor according to an embodiment of the present invention includes a first fiber element 100 and a second fiber element 200 . At this time, the first fiber element 100 and the second fiber element 200 are disposed in contact with each other. In the structure arranged in the figure, they are arranged so as to intersect with each other in a perpendicular manner, but they may be arranged in a form of a cloth crossing each other in various forms.

More specifically, the first fiber element 100 includes a drain electrode 110, an active layer 120, and a source electrode 130.

The second fiber element 200 includes a gate electrode 210, and an ionic elastic dielectric layer 220.

First, the first fiber element 100 is formed by coating the semiconductor active material on the conductive core fibers and sequentially winding the conductive fibers. At this time, the conductive core fibers of the first fiber element 100 function as the drain electrode 110, the semiconductor active material functions as the active layer 120, and the conductive fibers function as the source electrode 130.

The first fiber element 100 surrounds the drain electrode 110 and the drain electrode 110 disposed in the core region and coating the drain electrode 110 with the first fiber element 100 And a source electrode 130 which radially surrounds the surface of the active layer 120 in contact with the active layer 120. [

Here, the active layer 120 is made of a semiconductor material, and the semiconductor material may include at least one of an organic semiconductor, an inorganic semiconductor, and a carbon semiconductor. For example, the organic semiconductor may include polysiophene, pentacene, and the like, and the inorganic semiconductor may include silicon, germanium, gallium, arsenic, and the like. In addition, the carbon semiconductor includes carbon, and may include, for example, graphene, carbon nanotubes, and the like. The material constituting the organic semiconductor, the inorganic semiconductor, and the carbon semiconductor is merely an example, and is not limited to the above-mentioned materials.

The drain electrode 110 and the source electrode 130 may be formed of an electrode material selected from metals, conductive metal oxides, conductive polymers, conductive carbon, conductive nanoparticles, or nanoparticles interposed between organic materials or conductive materials.

Next, the second fiber element 200 is formed by coating the conductive core fiber 210 with an ionic elastic dielectric layer 220. At this time, the ionic elastic dielectric layer 220 of the second fiber element 200 functions as an insulating film, and the conductive core fibers function as the gate electrode 210.

The second fiber element 200 includes a gate electrode 210 disposed in a core region and an ionic elastic dielectric layer 220 surrounding the gate electrode 210 and coating the gate electrode 210. [ .

Like the drain electrode 110 and the source electrode 130 described above, the gate electrode 210 is formed of a metal, a conductive metal oxide, a conductive polymer, a conductive carbon, a conductive nanoparticle, or a nanoparticle inserted between an organic material or a conductive material Electrode material.

As described above, the ionic elastic dielectric layer 220 comprises an ionic bonding material that can be used as a dielectric. In one embodiment of the present invention, the ionic elastic dielectric layer 220 includes, but is not limited to, an ionic dielectric layer comprising an elastic polymeric compound and an ionic dielectric. At this time, the polymer compound is used as a matrix and can be replaced with an elastic material, a silicon-based inorganic material, a ceramic, or an organic material.

FIG. 1 (b) is a cross-sectional view of a first fiber element 100 and a second fiber element 100 when a voltage is applied in the ionic elastic dielectric layer 220 of the ionic elastic dielectric-based fiber- Fig. 3 is a conceptual diagram of a phenomenon appearing at an intersection point of the device 200. Fig.

When a voltage is applied to the gate electrode 210, the positive and negative ions of the ionic dielectric in the ionic elastic dielectric layer 220 move as shown in FIG. 1 (b). For example, the positive ions move to the gate electrode 210, and the negative ions move to the surface of the first fiber element 100 having the source electrode 130 and the drain electrode 110. As a result, the ionic elastic dielectric layer 220 forms an electric double layer, and a semiconductor carrier is accumulated in the active layer 120. When a voltage is applied to the drain electrode 110, a voltage difference occurs between the source electrode 130 and the drain electrode 110, and a current flows between the source electrode 130 and the drain electrode 110.

FIG. 2 is a flow chart for fabricating an ionic elastic dielectric-based fiber-type transistor according to an embodiment of the present invention.

A method of fabricating an ionic elastic dielectric based fiber-based transistor according to an embodiment of the present invention includes coating a semiconductor active material on a conductive core fiber and sequentially winding conductive fibers to form a first fiber element (S210) Coating the conductive core fiber with an ionic elastic dielectric layer to form a second fibrous element (S220), and weaving the first fibrous element and the second fibrous element crosswise (S230).

However, there is no particular significance in the order of forming the first fiber element (S210) and forming the second fiber element (S220), and each step may be performed in parallel. That is, the step of forming the second fiber element (S220) may be performed first, or each step may be performed simultaneously.

First, a step S210 for forming a first fiber element will be described in more detail with reference to FIGS. 3 and 4. FIG.

3 is a view for explaining a method of manufacturing a first fibrillated element according to an embodiment of the present invention.

4 is a flowchart illustrating a method of manufacturing a first fibrillated filament according to an embodiment of the present invention.

Referring to the flowchart of FIG. 4, a first method for fabricating a fibrillated fiber includes the steps of forming a conductive core fiber using a conductive material (S410), melting or spinning a semiconductor active material to the conductive core fiber, Coating the conductive fibers on the core fibers (S420), and winding the conductive fibers injected using the conductive material onto the conductive core fibers coated with the semiconductor active material (S430).

In step S410, conductive core fibers may be formed through a generally known fiber process. Alternatively, a plurality of conductive materials having different thicknesses may be combined and stretched to form a uniform conductive material. The conductive material may be finely drafted according to the properties of some materials, and then twisted to form a bobbin, The conductive core fibers can be formed.

Next, as shown in FIG. 3B, the semiconductor active material is coated on the conductive core fibers by melting or spinning the semiconductor active material on the conductive core fibers formed in the preceding step S410 (S420). That is, the active layer 120 made of a semiconductor is coated on the drain electrode 110 (S420). At this time, the semiconductor material may include at least one of an organic semiconductor, an inorganic semiconductor, and a carbon semiconductor. For example, the organic semiconductor may include polysiophene, pentacene, and the like, and the inorganic semiconductor may include silicon, germanium, gallium, arsenic, and the like. In addition, the carbon semiconductor includes carbon, and may include, for example, graphene, carbon nanotubes, and the like. The material constituting the organic semiconductor, the inorganic semiconductor, and the carbon semiconductor is merely an example, and is not limited to the above-mentioned materials.

Next, as shown in FIG. 3C, the conductive fibers injected using the conductive material in the preceding step S420 are wound on the conductive core fiber coated with the semiconductor active material (S430). For example, in the step S430 of winding the injected conductive fibers onto the conductive core fiber coated with the semiconductor active material, the injected conductive fibers may be wound into a helical structure in contact with the coated surface of the semiconductor active material have. That is, the source electrode 130 can be formed in a spiral structure on the drain electrode 110 coated with the active layer 120 by winding the conductive fiber in a spiral structure on the conductive core fiber coated with the semiconductor active material.

Meanwhile, the step of forming the second fiber element (S220) will be described in detail with reference to FIGS. 5 and 6. FIG.

5 is a view for explaining a method of manufacturing a second fibrous element according to an embodiment of the present invention.

6 is a flowchart illustrating a method of manufacturing a second fibrillator according to an embodiment of the present invention.

6, the method for fabricating the second fiber element 200 includes the steps of forming a conductive core fiber using a conductive material (S610), and a step of forming an ionic elastic dielectric material And coating the ionic elastic dielectric layer by spinning (S620).

The process of forming the conductive core fibers is the same as that described above with reference to FIG. 3 (a), and thus a detailed description thereof will be omitted.

In step (S620) of coating the ionic elastic dielectric layer by melting or solution spinning of the ionic elastic dielectric material on the conductive core fiber, the conductive core fiber formed in step (S610) The ionic elastic dielectric layer is coated on the conductive core fiber by melting or solution spinning. That is, the ionic elastic dielectric layer 220 made of an ionic elastic dielectric is coated on the conductive core fibers used as the gate electrode 210.

Next, referring again to FIG. 2, a first fiber element and a second fiber element formed through FIGS. 3 to 6 described above are cross-woven to fabricate a fiber-type transistor (S230). At this time, the method of fabricating the fiber-type transistor may use any textile method as long as the first fiber element and the second fiber element can contact each other.

According to the ionic elastic dielectric-based fiber-type transistor and the method for fabricating the same, one transistor is implemented at the intersection of the first fiber element 100 and the second fiber element 200 . Therefore, when the plurality of first fiber elements 100 and the plurality of second fiber elements 200 intersect, it is possible to realize an array in which a plurality of transistors are arranged at each intersection.

That is, the ionic elastic dielectric-based fiber-type transistor array according to an embodiment of the present invention includes a plurality of first fiber elements 100 formed by coating a semiconductor active material on conductive core fibers, sequentially winding conductive fibers, And a plurality of second fiber elements 200 coated with an ionic elastic dielectric layer on the conductive core fibers. Here, the conductive core fibers included in the first fiber element 100 are electrically connected to the drain electrode 110, and the conductive fiber core 100 is electrically connected to the drain electrode 110. The first fiber element 100 may be formed by weaving a plurality of first fiber elements and a plurality of second fiber elements, The semiconductor active material functions as the active layer 120, and the conductive fibers function as the source electrode 130 to form a fiber-type transistor.

At this time, the conductive core fibers included in the second fiber element 200 may be used as the gate electrode 220.

It will be understood by those skilled in the art that the foregoing description of the present invention is for illustrative purposes only and that those of ordinary skill in the art can readily understand that various changes and modifications may be made without departing from the spirit or essential characteristics of the present invention. will be. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

100: first fiber element
110: drain electrode
120: active layer
130: source electrode
200: second fiber element
210: gate electrode
220: ionic elastic dielectric layer

Claims (14)

In an ionic elastic dielectric-based fiber-type transistor,
A first fiber element formed by coating a conductive active material on a conductive core fiber and sequentially winding conductive fibers; And
And a second fibrous element coated with an ionic elastic dielectric layer on the conductive core fiber,
Wherein the first fiber element and the second fibril element are arranged crossing each other. The method according to claim 1,
The ionic elastic dielectric layer
Lt; RTI ID = 0.0 > a < / RTI > dielectric material that can be used as a dielectric. The method according to claim 1,
Wherein the conductive core fiber of the first fibrous element functions as a drain electrode, the semiconductor active material functions as an active layer, the conductive fiber functions as a source electrode,
Wherein the ionic elastic dielectric layer of the second fibrous element functions as an insulating film, and the conductive core fibers of the second fibrous element function as a gate electrode. Claim 4 has been abandoned due to the setting registration fee. The method of claim 3,
Ions included in the ionic elastic dielectric layer move according to a voltage applied to the gate electrode and a current flows between the drain electrode and the source electrode by ions adjacent to the active layer,
When a negative voltage is applied to the gate electrode, positive ions in the ionic elastic dielectric layer move to the gate electrode, negative ions move to the first fiber element,
Wherein an anion in the ionic elastic dielectric layer migrates to the gate electrode when the positive voltage is applied to the gate electrode and a cation moves toward the first fiber element. Claim 5 has been abandoned due to the setting registration fee. The method of claim 3,
The ionic elastic dielectric layer
On the intersection of the first fiber element and the second fiber element
According to the voltage applied to the gate electrode,
When a negative voltage is applied to the gate electrode, positive ions in the ionic elastic dielectric layer move to the gate electrode, negative ions move to the first fiber element,
When positive voltage is applied to the gate electrode, anions in the ionic elastic dielectric layer move to the gate electrode, cations move to the first fiber element to form an electric double layer, Wherein a carrier is deposited. In an ionically-elastic dielectric-based fiber-type transistor array,
A plurality of first fiber elements formed by coating a conductive semiconductor fiber with a conductive core fiber and sequentially winding conductive fibers; And
A plurality of second fibrous elements coated with an ionic elastic dielectric layer on the conductive core fibers,
Wherein the plurality of first fiber elements and the plurality of second fibrils are woven by crossing. The method according to claim 6,
The ionic elastic dielectric layer
Lt; RTI ID = 0.0 > a < / RTI > dielectric material that can be used as a dielectric. The method according to claim 6,
Wherein the conductive core fiber of the first fibrous element functions as a drain electrode, the semiconductor active material functions as an active layer, the conductive fiber functions as a source electrode,
Wherein the ionic elastic dielectric layer of the second fibrous element functions as an insulating film and the conductive core fibers of the second fibrous element function as a gate electrode. Claim 9 has been abandoned due to the setting registration fee. 9. The method of claim 8,
Ions included in the ionic elastic dielectric layer move according to a voltage applied to the gate electrode and a current flows between the drain electrode and the source electrode by ions adjacent to the active layer,
When a negative voltage is applied to the gate electrode, positive ions in the ionic elastic dielectric layer move to the gate electrode, negative ions move to the first fiber element,
Wherein anions in the ionic elastic dielectric layer migrate to the gate electrode and positive ions migrate toward the first fiber element when positive voltage is applied to the gate electrode. Claim 10 has been abandoned due to the setting registration fee. 9. The method of claim 8,
The ionic elastic dielectric layer
On the intersection of the first fiber element and the second fiber element
According to the voltage applied to the gate electrode,
When a negative voltage is applied to the gate electrode, positive ions in the ionic elastic dielectric layer move to the gate electrode, negative ions move to the first fiber element,
When positive voltage is applied to the gate electrode, anions in the ionic elastic dielectric layer migrate to the gate electrode and positive ions migrate toward the first fiber element to form an electric double layer, Wherein the carrier accumulates the carriers. A method of fabricating an ionic elastic dielectric based fiber-type transistor,
A step of coating a semiconductor active material on the conductive core fibers, coating the first fiber element formed by sequentially winding the conductive fibers, and coating the ionic elastic dielectric layer on the conductive core fibers to cross the second fiber element, ≪ / RTI > 12. The method of claim 11,
The first fibrillation material may include a conductive material to form the conductive core fiber;
Coating a semiconductor active material on the conductive core fibers by melting or solution spinning the semiconductor active material on the conductive core fibers; And
Wherein the step of winding the conductive fiber on the conductive core fiber coated with the semiconductor active material is conducted through a step of winding the conductive fiber injected using the conductive material onto the conductive core fiber coated with the semiconductor active material. Claim 13 has been abandoned due to the set registration fee. 13. The method of claim 12,
The step of winding the conductive core fiber
Wherein the injected conductive fibers contact a surface coated with the semiconductor active material and take up a spiral structure. 12. The method of claim 11,
The second fibrillation material may include a conductive material to form the conductive core fiber; And
And coating the ionic elastic dielectric layer by melting or solution spinning the ionic elastic dielectric onto the conductive core fibers.

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