KR101692265B1 - 마스크리스 노광 장치와 이를 이용한 패턴 보정 방법 - Google Patents
마스크리스 노광 장치와 이를 이용한 패턴 보정 방법 Download PDFInfo
- Publication number
- KR101692265B1 KR101692265B1 KR1020090120917A KR20090120917A KR101692265B1 KR 101692265 B1 KR101692265 B1 KR 101692265B1 KR 1020090120917 A KR1020090120917 A KR 1020090120917A KR 20090120917 A KR20090120917 A KR 20090120917A KR 101692265 B1 KR101692265 B1 KR 101692265B1
- Authority
- KR
- South Korea
- Prior art keywords
- stage
- peg
- synchronization signal
- dmds
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000012937 correction Methods 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 25
- 230000001360 synchronised effect Effects 0.000 claims description 6
- 238000012935 Averaging Methods 0.000 claims description 4
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2057—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using an addressed light valve, e.g. a liquid crystal device
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
- G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Data Mining & Analysis (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (12)
- 패턴 정보에 따라 광을 기판에 선택적으로 조사하는 다수개의 DMD;상기 기판을 스캔 방향으로 이동시키는 스테이지;상기 스테이지의 적어도 2개의 위치를 측정하는 위치 측정부; 및상기 스테이지의 적어도 2개의 위치의 평균값에 따라 상기 다수개의 DMD의 구동 시점을 조정하는 동기 신호(PEG)를 발생하는 동기 신호 발생부;를 포함하는 마스크리스 노광 장치.
- 제1항에 있어서,상기 위치 측정부는 상기 스테이지의 적어도 2개의 위치 측정을 위해 다수개의 레이저 간섭계를 포함하는 마스크리스 노광 장치.
- 제2항에 있어서,상기 동기 신호 발생부는 상기 다수개의 레이저 간섭계를 통해 측정된 위치 카운터를 평균하여 상기 스테이지의 중심부 위치 데이터를 구하고, 상기 스테이지의 중심부 위치 데이터를 이용하여 상기 동기 신호(PEG)를 주기적으로 발생하는 마스크리스 노광 장치.
- 제2항에 있어서,상기 동기 신호 발생부는 상기 다수개의 레이저 간섭계를 통해 측정된 위치 카운터 차이에 따라 상기 스테이지의 요잉량을 환산하여 각각의 DMD에서 보정해야 할 상기 요잉량의 보정량을 계산하는 마스크리스 노광 장치.
- 제4항에 있어서,상기 동기 신호 발생부는 상기 다수개의 DMD 수와 동일한 수의 동기 신호(PEG)를 발생하고, 상기 계산된 보정량에 따라 상기 다수개의 동기 신호가 발생되는 간격을 조정하여 상기 각각의 DMD에 전송하는 마스크리스 노광 장치.
- 제4항에 있어서,상기 동기 신호 발생부는 상기 계산된 보정량의 증가분과 상기 레이저 간섭계의 증가분을 비교하여 상기 동기 신호(PEG)의 간격 조정 여부를 결정하는 마스크리스 노광 장치.
- 제5항에 있어서,상기 다수개의 DMD는 상기 동기 신호 발생부로부터 서로 다른 동기 신호(PEG)를 전송받아 각각의 프레임을 서로 다른 위치에서 스위칭하는 마스크리스 노광 장치.
- 기판이 안착된 스테이지를 스캔 방향으로 이동시키고;상기 스테이지의 적어도 2개의 위치를 측정하여 상기 스테이지의 요잉량을 환산하고;상기 스테이지의 적어도 2개의 위치를 평균하여 평균값을 획득하고;상기 평균값에 따라 다수개의 DMD를 구동시키는 동기 신호(PEG)의 간격을 조정하고;상기 간격이 조정된 동기 신호(PEG)를 상기 다수개의 DMD에 전송하여 상기 기판에 패턴을 노광하는 마스크리스 노광 장치의 패턴 보정 방법.
- 제8항에 있어서,상기 스테이지의 위치를 측정하는 것은,상기 스테이지의 적어도 2개의 위치를 다수개의 레이저 간섭계를 이용하여 측정하는 마스크리스 노광 장치의 패턴 보정 방법.
- 제9항에 있어서,상기 스테이지의 요잉량을 환산하는 것은,상기 스테이지의 적어도 2개의 위치의 카운터 차이에 따라 상기 스테이지의 요잉량을 환산하여 상기 다수개의 DMD에서 보정해야 할 상기 요잉량의 보정량을 계산하는 마스크리스 노광 장치의 패턴 보정 방법.
- 삭제
- 삭제
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090120917A KR101692265B1 (ko) | 2009-12-08 | 2009-12-08 | 마스크리스 노광 장치와 이를 이용한 패턴 보정 방법 |
US12/926,514 US8619233B2 (en) | 2009-12-08 | 2010-11-23 | Maskless exposure apparatus and pattern compensation method using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090120917A KR101692265B1 (ko) | 2009-12-08 | 2009-12-08 | 마스크리스 노광 장치와 이를 이용한 패턴 보정 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20110064361A KR20110064361A (ko) | 2011-06-15 |
KR101692265B1 true KR101692265B1 (ko) | 2017-01-04 |
Family
ID=44081719
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020090120917A Expired - Fee Related KR101692265B1 (ko) | 2009-12-08 | 2009-12-08 | 마스크리스 노광 장치와 이를 이용한 패턴 보정 방법 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8619233B2 (ko) |
KR (1) | KR101692265B1 (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140103740A (ko) * | 2013-02-19 | 2014-08-27 | 삼성전자주식회사 | 리소그래피 장치 및 방법 |
KR102149535B1 (ko) * | 2013-07-18 | 2020-10-15 | 삼성디스플레이 주식회사 | 디지털 노광기 |
KR102151254B1 (ko) * | 2013-08-19 | 2020-09-03 | 삼성디스플레이 주식회사 | 노광장치 및 그 방법 |
DE102014203040A1 (de) | 2014-02-19 | 2015-08-20 | Carl Zeiss Smt Gmbh | Beleuchtungssystem einer mikrolithographischen Projektionsbelichtungsanlage und Verfahren zum Betreiben eines solchen |
US9395631B2 (en) * | 2014-04-01 | 2016-07-19 | Applied Materials, Inc. | Multi-beam pattern generators employing yaw correction when writing upon large substrates, and associated methods |
KR20170105247A (ko) | 2016-03-09 | 2017-09-19 | 삼성전자주식회사 | 마스크리스 노광 장치 및 이를 이용한 누적 광량의 측정 방법 |
CN109426091B (zh) | 2017-08-31 | 2021-01-29 | 京东方科技集团股份有限公司 | 曝光装置、曝光方法及光刻方法 |
CN109656101B (zh) * | 2018-12-07 | 2021-04-02 | 东莞市多普光电设备有限公司 | 一种数字微镜倾斜扫描的数据处理方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5200798A (en) * | 1990-07-23 | 1993-04-06 | Hitachi, Ltd. | Method of position detection and the method and apparatus of printing patterns by use of the position detection method |
JPH10321502A (ja) * | 1997-05-16 | 1998-12-04 | Nikon Corp | 荷電粒子線投影方法 |
AU1053199A (en) * | 1997-11-14 | 1999-06-07 | Nikon Corporation | Exposure apparatus and method of manufacturing the same, and exposure method |
US6891624B2 (en) * | 2001-03-13 | 2005-05-10 | Zygo Corporation | Cyclic error reduction in average interferometric position measurements |
JP4320694B2 (ja) * | 2001-08-08 | 2009-08-26 | 株式会社オーク製作所 | 多重露光描画装置および多重露光式描画方法 |
JP4201178B2 (ja) * | 2002-05-30 | 2008-12-24 | 大日本スクリーン製造株式会社 | 画像記録装置 |
CN101171826A (zh) * | 2005-03-31 | 2008-04-30 | 富士胶片株式会社 | 描绘点数据取得方法及装置和描绘方法及装置 |
-
2009
- 2009-12-08 KR KR1020090120917A patent/KR101692265B1/ko not_active Expired - Fee Related
-
2010
- 2010-11-23 US US12/926,514 patent/US8619233B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20110134407A1 (en) | 2011-06-09 |
US8619233B2 (en) | 2013-12-31 |
KR20110064361A (ko) | 2011-06-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101692265B1 (ko) | 마스크리스 노광 장치와 이를 이용한 패턴 보정 방법 | |
US8599358B2 (en) | Maskless exposure apparatuses and frame data processing methods thereof | |
JP6111606B2 (ja) | 駆動制御装置および駆動制御方法、並びに映像出力装置 | |
JP4201178B2 (ja) | 画像記録装置 | |
US20090097002A1 (en) | Exposure device | |
US20100208229A1 (en) | Maskless exposure method | |
EP0811882A1 (en) | Laser pattern generation apparatus | |
US10914574B2 (en) | Three-dimensional measurement device | |
TW201229984A (en) | Image display device | |
KR100482019B1 (ko) | 주사형노광장치및방법 | |
JP6129579B2 (ja) | 露光装置 | |
KR101698141B1 (ko) | 마스크리스 노광장치 및 그 제어방법 | |
KR20100042864A (ko) | 노광장치 및 그 진직도 측정방법 | |
US9041907B2 (en) | Drawing device and drawing method | |
JP2010123694A (ja) | 走査露光装置およびデバイス製造方法 | |
JP2010272673A (ja) | 露光装置及びデバイス製造方法 | |
KR101437692B1 (ko) | 복수의 공간광변조기를 이용한 마스크리스 노광장치 및이를 이용한 패턴 형성 방법 | |
JP5305967B2 (ja) | 露光装置、露光方法、及び表示用パネル基板の製造方法 | |
JP4208467B2 (ja) | カメラシステム及びその制御方法、デバイス製造装置、露光装置並びにデバイスの製造方法 | |
JP6148135B2 (ja) | 露光装置 | |
JP2005001153A (ja) | 画素位置特定方法、画像ずれ補正方法、および画像形成装置 | |
US8319943B2 (en) | Exposure apparatus, light source apparatus and method of manufacturing device | |
JP2011064829A (ja) | パターン描画装置および描画方法 | |
JP2010102084A (ja) | 露光装置、露光方法、及び表示用パネル基板の製造方法 | |
WO2014174352A1 (ja) | 露光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20091208 |
|
PG1501 | Laying open of application | ||
A201 | Request for examination | ||
PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20141208 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 20091208 Comment text: Patent Application |
|
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20160408 Patent event code: PE09021S01D |
|
E90F | Notification of reason for final refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Final Notice of Reason for Refusal Patent event date: 20160927 Patent event code: PE09021S02D |
|
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20161221 |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20161228 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 20161229 End annual number: 3 Start annual number: 1 |
|
PG1601 | Publication of registration | ||
PR1001 | Payment of annual fee |
Payment date: 20191129 Start annual number: 4 End annual number: 4 |
|
PC1903 | Unpaid annual fee |