KR101674081B1 - Composition for High Dielectric Film Condenser, Method for Manufacturing the Same, and High Dielectric Film for Film condenser comprising the Same - Google Patents

Abstract

The present invention relates to a composition for a high dielectric constant film capacitor comprising a thermoplastic polymer having a surface of a high dielectric constant inorganic particle having a particle diameter of 100 nm or less, a method for producing the composition, and a high dielectric constant film for a film capacitor comprising the same.
According to the present invention, a composition including a polymer in which nano-sized high-dielectric inorganic particles are formed has a high dielectric constant because nano inorganic particles are uniformly dispersed in the polymer and nano inorganic particles are tightly bonded in the film, A high dielectric constant film for a film capacitor having high durability and stability can be produced.

Description

TECHNICAL FIELD The present invention relates to a composition for a high dielectric film capacitor, a process for producing the same, and a dielectric film for a film capacitor including the dielectric film.

The present invention relates to a composition for a high dielectric film capacitor, a method for producing the same, and a dielectric film for a film capacitor including the same.

Since the insulating plastic has a high insulation resistance, excellent frequency characteristics, and excellent flexibility, it is expected to be used as a material for film capacitors for communication, electronic devices, electric power, and inverters have.

Film capacitors typically include film capacitors (called metallized film capacitors), films of aluminum foil and dielectric films on the surface of a dielectric film on which aluminum or zinc is deposited Multilayered film capacitors (called film / foil capacitors), and the like. In recent years, electrodes formed on a dielectric plastic film by metal vapor deposition have also been widely used.

Examples of the deposited metal include aluminum, zinc, tin, nickel chrome, iron, copper titanium, and alloys of these metals. Zinc, aluminum, tin, or an alloy containing them is preferably used in terms of electrical characteristics and productivity of the film capacitor.

Hydrocarbon polymers such as polypropylene (PP), polyester (PET) and polyphenylene sulfide (PPS) have been studied as dielectric polymers of film for film capacitors. However, (dielectric permittivity) is about 2.3 ~ 3.

A metallized film capacitor using a film made of polypropylene (PP), polyester (PET) film as a dielectric film and a metal deposition layer as an electrode on the surface thereof, And thus it is widely used. Polyester (PET) films are inexpensive and easy to use. On the other hand, a polypropylene (PP) film has an advantage that a high-precision and high-performance film capacitor can be formed more than a polyester (PET) film. BACKGROUND ART Polypropylene films are widely used in electric applications because of their excellent electrical properties and the like. The thickness of the polypropylene (PP) film or the polyester (PET) film is appropriately set depending on the application, but is generally in the range of 0.5 to 25 μm, preferably 1.5 to 16 μm. It is known that a polyphenylene sulfide film can be used as a dielectric of a film capacitor to provide a capacitor excellent in heat resistance, frequency characteristics, and temperature characteristics.

However, such a capacitor is disadvantageous in that the range of manufacturing conditions in the manufacturing process such as winding, cutting, molding and the like is so narrow that such management is insufficient and defective products due to low-voltage breakage are increased due to variations in physical properties of the film surface.

As the film capacitor is miniaturized / increased in capacity, there is a strong demand for an additional high dielectric constant of the capacitor film. Among them, the elongation as a dielectric material in capacitor applications is remarkable. In recent years, there has been a strong demand for downsizing and cost reduction, and film thickness of the dielectric film is progressing.

The capacitance value of the film capacitor is proportional to the dielectric constant of the film material used and is known to be inversely proportional to the film thickness of the film.

(1) a technique of increasing the capacitance by using polyvinylidene fluoride (PVDF) and a polypropylene copolymer film which are polymers having high dielectric constant, (2) a technique of increasing the dielectric constant by using a polyvinylidene fluoride (PVDF) A technique of increasing the capacitance by using a film containing high barium titanate oxide particles, and the like are known.

Polyvinylidene fluoride (PVDF) polymer, which is a high permittivity polymer, has a dielectric constant of 18 to 20, but its use is limited to a Curie temperature of 60, and polypropylene (PP), polyester (PET) film, the tensile strength, endurance, and productivity are lowered.

Though the film thickness of the film, that is, the film has been studied, it is difficult to form the film when the film is thinned, but the withstand voltage is lowered.

Therefore, the present inventors propose a technique of composing inorganic nanoparticles having a high dielectric constant and a polymer and forming them into a film, as one means of increasing the dielectric constant of a film for a film capacitor.

KR 2010-0109942 A KR 2011-0096596 A

In order to solve the problems of the prior art, it is an object of the present invention to provide a composition for a high dielectric constant film capacitor that enables high dielectric constant of a film capacitor, a method for producing the composition, and a high dielectric constant film for a film capacitor .

In order to achieve the above object, the present invention provides a composition for a high dielectric constant film capacitor comprising a thermoplastic polymer having a surface of a high dielectric constant inorganic particle having a particle diameter of 100 nm or less.

The present invention also provides a method for producing a thermoplastic polymer, comprising the steps of: 1) forming a high-dielectric inorganic nanoparticle on the surface of a powder or chip-shaped thermoplastic polymer to prepare a thermoplastic polymer having a high-dielectric inorganic nanoparticle; And 2) dispersing the thermoplastic polymer in which the high-dielectric inorganic nanoparticles are formed in a solvent to prepare a composition for a high-dielectric film capacitor.

In addition, the present invention provides a high dielectric constant film for a film capacitor comprising the composition for the high dielectric constant film capacitor.

The present invention also provides a high dielectric constant film for a film capacitor, wherein the high dielectric inorganic nanoparticle comprises a thermoplastic polymer having a surface attached thereto.

According to the present invention, a composition including a polymer in which nano-sized high-dielectric inorganic particles are formed has a high dielectric constant because nano inorganic particles are uniformly dispersed in the polymer and nano inorganic particles are tightly bonded in the film, A high dielectric constant film for a film capacitor having high durability and stability can be produced.

1 is a conceptual diagram of a process for forming inorganic nanoparticles on the surface of a thermoplastic polymer in powder or chip form according to the present invention.
2 is a conceptual diagram of a vacuum deposition apparatus equipped with an agitating vessel for forming inorganic nanoparticles on the surface of a thermoplastic polymer in powder or chip form in an embodiment of the present invention.
FIG. 3 is a photograph showing a PVDF powder and a PVDF powder in which silver (Ag) and brass nanoparticles are formed on the surface of the PVDF powder according to the present invention.

Hereinafter, the present invention will be described in detail.

The present invention provides a composition for a high dielectric constant film capacitor comprising a thermoplastic polymer to which a high dielectric constant inorganic particle having a particle diameter of 100 nm or less is attached to a surface.

The composition for a high dielectric film capacitor includes a thermoplastic polymer.

The thermoplastic polymer may be one or a mixture of two or more selected from the group consisting of a fluorine-containing thermoplastic polymer and a non-fluorine-containing thermoplastic polymer.

(PTFE), trifluoroethylene (TrFE), hexafluoropropylene (HFP), perfluoro (alkyl vinyl ether) (PAVE), polyvinylidene fluoride ) May be used, but the present invention is not limited thereto.

In particular, when the relative dielectric constant (20 占 폚, 1 kHz) is 3 or more, preferably 5 or more, more preferably 8 or more, and most preferably 10 or more, improvement of withstand voltage, insulation property and relative dielectric constant, Is preferred because of its high relative dielectric constant. Therefore, it is most preferable to use a vinylidene fluoride (PVdF) based resin.

The upper limit value of the relative dielectric constant is not particularly limited, but is usually 12, preferably 11.

The non-fluorine-containing thermoplastic polymer is preferably a polyester-based polymer such as polybutylene terephthalate (PBT), polyester (PET), polyethylene naphthalate (PEN) or the like in view of flexibility and high dielectric constant; Polycarbonate-based (PC); Silicone resin, polyether-based resin, polyvinyl acetate resin, polyethylene-based resin and polypropylene (PP) -based resin are preferable. In order to increase the strength, poly (meth) acrylate, epoxy resin, polyethylene oxide , Polypropylene oxide, polyphenylene oxide (PPO), polyphenylene sulfide (PPS), polyamide series (PA), polyimide series (PI), polyamideimide series (PAI), polystyrene series, (PBI) can be used. In addition, cyanoplurane, a copper phthalocyanine-based polymer and the like can be used in order to supplement the high dielectric constant. From the viewpoint of improving the mechanical strength and insulation resistance, a resin such as a cellulose- .

In particular, polycarbonate-based, polyethylene oxide, polypropylene oxide, poly (meth) acrylate-based, polyvinyl acetate, and cellulose-based resins are preferable in terms of improvement of mechanical strength and insulation resistance.

Among them, when used in combination with the fluorine-containing thermoplastic polymer, at least one kind selected from the group consisting of a cellulose-based resin, a polyester resin and a polymethylmethacrylate is particularly preferable in view of the excellent miscibility with the fluorine- desirable.

Particularly, when a cellulose resin is used in combination, it is effective to improve the relative dielectric constant and reduce the dielectric loss.

The thermoplastic polymer is preferable in that the powder having a diameter of 2.0 m or less is easy to handle when the high dielectric constant film is formed.

The dielectric constant of the high-dielectric inorganic material is preferably 5 to 200, and may be selected according to the characteristics of the composition for a film capacitor.

The high dielectric inorganic material may be at least one selected from the group consisting of Si, Cu, Zn, Br, Al, Ber, Mg, Sr, Ba, (Ag), gold (Au), tantalum (Y), titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium , platinum (Pt), palladium (Pd) or of their oxides of silicon oxide (SiO _2), copper oxide (CuO), zinc oxide (ZnO), copper oxide (CuO), alumina (Al ₂ O _3), beryllium oxide (BeO), magnesium (MgO), strontium oxide (SrO), barium (BaO), yttrium oxide oxide (Y ₂ O _3), titanium (TiO), titanium dioxide (TiO _2), zirconium oxide (ZrO ₂₎ oxide, a half-di (HfO _2), vanadium oxide (V ₂ O _3), niobium (Nb ₂ O _5), tantalum oxide (Ta ₂ O _5), lanthanum (La ₂ O _3), silver oxide (Ag ₂ O oxide ), Gold oxide (Au ₂ O ₃ ), platinum oxide (PtO ₂ ), palladium oxide (PdO), and the like.

Preferably, the high dielectric inorganic material is at least one selected from the group consisting of silicon (Si), titanium oxide (TiO ₂ ), titanium dioxide (TiO ₂ ), copper oxide (CuO), zinc oxide (ZnO), alumina (Al ₂ O ₃ ), yttrium oxide Y ₂ O ₃ ), magnesium oxide (MgO), zirconium oxide (ZrO ₂ ), beryllium oxide (BeO) and lanthanum oxide (La ₂ O ₃ ).

The diameter of the particles on the thermoplastic polymer surface is 100 nm or less, preferably 80 nm or less. The lower limit is not particularly limited, but the high-dielectric inorganic particles having 10 to 50 nm are attached.

When such inorganic nanoparticles are uniformly dispersed on the surface of the thermoplastic polymer, the electrical insulation of the film can be greatly improved by a small amount of the inorganic nanoparticles.

The present invention provides a process for producing the composition for a high dielectric constant film capacitor.

Specifically, the present invention provides a method for preparing a thermoplastic polymer, comprising the steps of: 1) preparing a thermoplastic polymer having a high-dielectric inorganic nanoparticle formed on the surface of a powder or chip-shaped thermoplastic polymer; And 2) dispersing the thermoplastic polymer in which the high-dielectric inorganic nanoparticles are formed in a solvent to prepare a composition for a high-dielectric film capacitor.

The step 1) is performed in an apparatus for producing nanoparticles having an agitator for stirring thermoplastic polymer powder and an evaporation source for generating inorganic nanoparticles.

More specifically, the nanoparticle production apparatus includes a vacuum deposition vessel; A stirring tank provided in the vacuum evaporation tank; A screw provided in the stirring tank and stirring the thermoplastic polymer powder; And an evaporation source provided in the upper portion of the stirring tank in the vacuum evaporation tank and evaporating the inorganic particles.

The upper end of the side surface of the stirring tank is bent to 1 to 90 degrees in the center direction with respect to the vertical surface, and the screw is horizontally or vertically disposed at an angle of 1/5 to 3/4 of the total depth of the thermoplastic polymer powder charged into the stirring tank. 4 is stirred.

The nanoparticle production apparatus is characterized in that the sides of the agitator are bent by 1 to 90 degrees in the center direction with respect to the vertical plane. As a result, it is possible to prevent the thermoplastic polymer powder from escaping to the outside through the stirring vessel wall.

The screw is a horizontal or vertical screw, which stirs the thermoplastic polymer powder in the horizontal or vertical direction.

The nanoparticle production apparatus is characterized in that the screw is provided so as to agitate 1/5 to 3/4 of the total depth of the thermoplastic polymer powder charged in the stirring tank.

The apparatus for manufacturing nanoparticles prevents the thermoplastic polymer powders from scattering upward even at a high speed stirring by allowing the horizontal or vertical screw to be sufficiently loaded in the thermoplastic polymer powder and to prevent the thermoplastic polymer powders from stagnating at the central or wall surface, The powders were easily moved up and down inside the stirring tank.

The step 1) comprises the steps of: a) injecting a thermoplastic polymer powder (or a chip) into a stirring tank in a vacuum evaporation tank; b) vacuum evacuation to perform a vacuum deposition process; c) stirring the thermoplastic polymer powder (or chip); d) generating particles for formation of nano-sized inorganic particles using an evaporation source; And e) depositing inorganic particles onto the surface of the thermoplastic polymer powder (or chip).

As a method for generating the inorganic particles in the step d), thermal evaporation, E-beam evaporation, DC sputtering, cathodic arc sputtering, DC magnetron deposition (DC such as magnetron sputtering, RF sputtering, ion beam sputtering, molecular beam epitaxy, arc discharge process, and laser ablation. have.

The speed at which the polymer powder (or the chip) is stirred by the stirring wing of the stirring tank is preferably controlled in the range of 0.1 to 400 rpm.

Also, the working pressure of the vacuum deposition chamber is preferably adjusted to 5 x 10 ^-4 to 5 x 10 ^-3 torr. At a low vacuum of 5 x 10 ^-3 torr or less, the average distance of free movement of atomic particles is shortened, making it difficult for inorganic nanoparticles to form on the surface of polymer powder (pellets).

In the step of forming nano-sized inorganic particles on the polymer powder (or chip), the particles are deposited on the polymer powder (or chip) to form nuclei, and the nuclei are then added to the nano- After the particles are formed, the polymer powder (pellets) is mixed with stirring, rotated, and mixed with the inorganic particles (pellets) on the surface of the polymer powder (or chip) on which the inorganic particles are not deposited, Can be deposited to form nano-sized inorganic particles.

2, a polymer powder (or a chip) (not shown) charged into an agitating vessel 7 is stirred in a vacuum evaporator, and at the same time, the inorganic particles generated in the evaporation source 6 are directed to the surface of the polymer Inorganic particles form nuclei on the surface of the polymer and grow to form nano-sized particles.

Preferably, nano-sized inorganic particles are deposited on the polymer powder (or chip) to a thickness of 1 A to 10 mu m per unit area per minute.

The degree of vacuum of the vacuum deposition chamber is controlled by including an inert gas. The inert gas may be argon (Ar), neon (Ne), N ₂ , O _{2, and the} like.

The size of the inorganic particles formed on the surface of the polymer powder (or chip) in the step e) is preferably 1 to 100 nm.

The step 2) is a step of dispersing or dissolving the thermoplastic polymer having the high-dielectric inorganic nanoparticles formed therein in a solvent to prepare a solution, adding other additives to the solution, and dispersing the mixture by stirring, preferably with heating and stirring Lt; / RTI >

The solvent preferably disperses or dissolves the polymer to produce a coating composition. The solvent may be an inorganic solvent (water or the like) or an organic solvent, but it may be selected depending on the type of polymer.

For example, for the polycarbonate-based polymer, ether solvents such as dioxane and tetrahydrofuran; Non-polar solvents such as chloroform and cresol; Amide solvents such as dimethylformamide; And ketone solvents such as methyl ethyl ketone. In particular, ether solvents, amide solvents and ketone solvents are preferable from the viewpoint of good stability in the case of a mixed solvent.

Ketone solvents such as methyl ethyl ketone for the cellulose polymer; Ester solvents such as ethyl acetate; Ether solvents such as dioxane; And amide solvents such as dimethylformamide. Among them, ether solvents, amide solvents and ketone solvents are preferable from the viewpoint of good stability when mixed as a solvent.

Examples of the polyphenylene ether polymer include ketone type solvents, aromatic hydrocarbon type solvents such as toluene and mesitylene, and chlorinated hydrocarbon type solvents such as chloroform and cyclomethane. In view of good applicability, ketone type solvents, An aromatic hydrocarbon solvent is preferred.

As the polycycloolefin polymer, a ketone-based solvent, an aromatic hydrocarbon-based solvent, a chlorinated hydrocarbon-based solvent and the like are exemplified, and an aromatic hydrocarbon-based solvent is preferable from the viewpoint of good applicability.

Examples of the polysulfone polymer include alcohol solvents such as isopropyl alcohol and butanol, ketone solvents and chlorinated hydrocarbon solvents. Alcohol solvents and ketone solvents are preferable in view of good coatability.

Examples of the polyethersulfone polymer include alcohol solvents, ketone solvents and chlorinated hydrocarbon solvents. Alcohol solvents and ketone solvents are particularly preferable in view of good coatability.

The composition for a high dielectric film capacitor of the present invention is preferably adjusted to have a viscosity of from 0.01 to 3 Pa.s, in view of good coatability and uniform and smooth film. Particularly, it is preferable that the surface roughness is suppressed to 1.5 Pa · s or less.

The composition for the high-dielectric film capacitor may be an emulsion type (solvent is water, etc.). Particularly, it is preferable to disperse the inorganic particles in the solution of the polymer organic solvent from the viewpoint that the composition can be uniformly adjusted and the homogeneous film can be easily obtained from the composition.

In addition, the present invention provides a high dielectric constant film for a film capacitor comprising the composition for the high dielectric constant film capacitor.

Preferably, the film is formed by applying a composition for a high dielectric film capacitor to a substrate and drying to form a film; And peeling the film from the substrate.

Coating methods such as a knife coating method, a cast coating method, a roll coating method, a gravure coating method, a blade coating method, a rod coating method, an air doctor coating method, a curtain coating method, a Faknelane coating method, A spin coating method, a spray coating method, an extrusion coating method, an electrodeposition coating method, and the like can be used. Among these, ease of operation is easy, variation in film thickness is small, productivity A roll coating method, a gravure coating method and a cast coating method are preferable.

Drying can be performed by a method using a Yankee cylinder, counter flow, hot air blowing, air flow cylinder, air through, infrared ray, microwave, induction heating or the like. For example, in the hot air blowing method, a condition of within 1 minute at 130 to 200 DEG C can be preferably adopted.

Since the high-dielectric film for a film capacitor is peeled off from the base material, the base material may be a material which is liable to peel off the polymer, for example, a metal plate such as stainless steel or copper; Glass plate; A polymer film on which ITO or ZnO is deposited; A polymer film subjected to a releasing treatment on the surface thereof and the like are preferable. Among them, the polymer film subjected to the releasing treatment on the surface is preferably peelable and high in productivity.

The substrate preferably has surface free energy (unit: J / m < 2 >) of 30 or more and a contact angle with water of 110 or less.

Alternatively, in order to store the film as a substrate, the coating composition of the present invention may be applied to the polymer film and dried to form a laminated film. As the substrate of the laminated film, a polymer film having a thickness of about 1.5 to 3 mu m which is excellent in adhesion to the VdF-based polymer (A) is preferable. Examples of the polymer include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polyacrylate (PA), polyimide (PI), polyamideimide (PAI), polybenzimidazole , Polyphenylene sulfide (PPS), polyphenylene oxide (PPO), and polysulfone (PSF).

Examples of the mold-releasing treatment include a treatment for applying various releasing agents, a plasma treatment, and a treatment for laminating a releasable film.

The film obtained as a result of peeling may be used as it is or may be stretched by a known biaxial stretching method. In this case, the stretching magnification is preferably 2 to 6 times.

As a method of biaxial stretching, one of inflation simultaneous biaxial stretching method, simultaneous biaxial stretching method of stenter and biaxial stretching method of stenter biaxial stretching can be used. Among these methods, however, it is preferable to control film forming stability, thickness uniformity, So that the stenter biaxial stretching method is preferably used.

The present invention also provides a high dielectric constant film for a film capacitor, wherein the high dielectric inorganic nanoparticle comprises a thermoplastic polymer having a surface attached thereto.

Preferably, the film is produced by melt extruding a thermoplastic polymer having a surface-attached high-dielectric inorganic nanoparticle.

In addition, plasma treatment or corona discharge treatment may be further applied to the surface of the film in order to facilitate deposition of aluminum for the electrode on the resulting film for use as a high-dielectric film for a film capacitor. Further, in order to suppress the surface roughness of the film, a kind of polymer may be coated on the surface, or a crosslinking treatment by ultraviolet rays, electron beams, or radiation may be performed to improve the strength.

Hereinafter, the present invention will be described in more detail by way of examples.

The dielectric constant of nano-sized inorganic particles (1 to 100 nm) formed in the polymer powder in the present invention is as follows.

Minerals Dielectric constant Silicon (Si) 11.0-12.0 Titanium dioxide (TiO2) 110 Titanium oxide (TiO) 40 to 50 Copper oxide (CuO) 18.1 Zinc oxide (ZnO) 10.8-11 Alumina (Al2O3) 9.3 to 11.5 Yttrium oxide (Y2O3) 14-18.2 Magnesium oxide (MgO) 9.7 Zirconium oxide (ZrO2) 12.5 Beryllium oxide (BeO) 6.6 Lanthanum oxide (La2O3), 27 Silver (Ag) 4.0 Brass 6.0 ~ 6.2

≪ Example 1 >

Step 1: coating with high-dielectric inorganic nanoparticles PVDF  Preparation of powder

10 kg of polyvinylidene fluoride (PVDF) powder was poured into a stirring tank and vacuum pumping was performed until the base pressure was reached. In this case, the basic vacuum degree is 1 × 10 ^-5 to 5 × 10 ^-5 Torr. After reaching the basic degree of vacuum, the PVDF powder is stirred and the deposition process is carried out by sputtering using a silver (Ag) or brass target Respectively. The working pressure during the vacuum deposition was maintained in the range of 1 x 10 ^-4 to 5 x 10 ^-3 Torr. In the deposition process, the power of the DC power source is 500W, and the time is 3 hours and 20 minutes, and the content of silver or brass nano-particles is 1,000ppm.

As a result, 1,000 ppm of silver (Ag) and brass inorganic nanoparticles were formed on the surface of the PVDF powder.

Referring to FIG. 3, it can be seen that the silver and brass nanoparticles are uniformly colored according to kinds of the raw materials of the nanoparticles due to the plasmon phenomenon, and uniform color is formed, and they are uniformly formed on the surface of the PVDF powder Able to know. The content of the nanoparticles in the powder may be adjusted to a higher content by controlling the deposition time if necessary.

Step 2: For film capacitor  Preparation of composition

A PVDF powder (or a chip) having the above-described inorganic nanoparticles formed on its surface was dispersed or dissolved in an amide-based solvent (EQUAMIDE, manufactured by Idemitsu Kosan Co., Ltd.) to prepare a composition for a high dielectric film capacitor.

Step 3: Film For condenser  Manufacture of high dielectric films

The composition for a high dielectric film capacitor prepared above was applied to a PET substrate using a cast coating method and dried under hot air spraying at 130 to 200 ° C for 1 minute to form a film, And peeled from the substrate to prepare a high-dielectric film for a film capacitor.

≪ Example 2 >

Copper nanoparticles were formed on the surface of a low-density polypropylene (LDPP) powder in the same manner as in Example 1. At this time, the content of the nanoparticles was 1,500 ppm by weight. And 1,500 ppm of copper oxide nanoparticles were formed on the surface of the high-melt tension polypropylene (HMS-PP) powder. In addition, 1,500 ppm of titanium dioxide nanoparticles were formed on the surface of the low density polypropylene (LDPP) powder instead of the copper oxide nanoparticles.

The low-density polypropylene formed with the copper oxide nanoparticles and the low-density polypropylene formed with the titanium dioxide nanoparticles and the high-melt-strength polypropylene formed with the copper oxide nanoparticles were blended and melt-extruded. The melt-extruded resin was passed through a filtration filter and extruded from a slit-shaped nip (flat die) at a temperature of 220 to 280 ° C. The polymer extruded from the cage was solidified on a cooling drum to obtain an unstretched (unstretched cast sheet).

The unstretched film was passed through a plurality of rolls maintained at 120 to 150 ° C to be preheated. The preheating was performed so that there was no temperature difference so that both sides of the film had the same surface shape. While maintaining this temperature state, the film was passed between rolls having a main difference in speed, stretched 2 to 6 times in the longitudinal direction, cooled to room temperature, and biaxially stretched to biaxially orient the unstretched film.

Then, the film was stretched in the axial direction at 140 ° C and then stretched in the biaxial direction at 150 ° C to obtain a polypropylene film containing the high-dielectric nano-inorganic particles having a thickness of 3 μm. According to this stretching method, uniform irregularities of about 0.3 mu m were formed on the surface of the sheet.

Claims (10)

1) preparing a thermoplastic polymer having high-dielectric inorganic nanoparticles adhered to its surface by forming a high-dielectric inorganic nanoparticle having a diameter of 100 nm or less on the surface of a powder or chip-shaped thermoplastic polymer through vapor deposition; And
2) dispersing the thermoplastic polymer having the surface of the high-dielectric inorganic nanoparticles on the surface thereof in a solvent to prepare a composition for a high-dielectric film capacitor. The thermoplastic resin composition according to claim 1, wherein the thermoplastic polymer is at least one selected from the group consisting of a polyester, a polycarbonate, a silicone resin, a polyether, a polyvinyl acetate, a polyethylene, a polypropylene, a poly (meth) acrylate, an epoxy resin, Polypropylene oxide, polyphenylene oxide, polyphenylene sulfide, polyamide, polyimide, polyamideimide, polystyrene, polybenzimidazole, vinylidene fluoride, polytetrafluoroethylene, trifluoroethylene , Hexafluoropropylene, and perfluoro (alkyl vinyl ether) resin. The method for producing a composition for a high-dielectric-constant film capacitor according to claim 1, The method of claim 1, wherein the high dielectric inorganic material is selected from the group consisting of Si, Cu, Zn, Br, Al, Ber, Mg, (Ba), yttrium (Y), titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), lanthanum (La) , gold (Au), platinum (Pt), palladium (Pd) or of their oxides of silicon oxide (SiO _2), copper oxide (CuO), zinc oxide (ZnO), alumina (Al ₂ O _3), beryllium oxide ( BeO), magnesium (MgO), strontium oxide (SrO), barium (BaO), yttrium oxide oxide (Y ₂ O _3), titanium (TiO), titanium dioxide (TiO _2), zirconium oxide (ZrO _2), oxidation half-di (HfO _2), vanadium oxide (V ₂ O _3), niobium (Nb ₂ O ₅₎ oxide, tantalum oxide (Ta ₂ O _5), lanthanum (La ₂ O _3), silver oxide (Ag ₂ O) oxidation , gold (Au ₂ O _3), platinum oxide (PtO ₂₎ and one or more characterized in that the mixture of lead is selected from the group consisting of palladium (PdO) oxide Specific method for the conductive film capacitor composition. delete [2] The method of claim 1, wherein the step 1) comprises the steps of: a) injecting a thermoplastic polymer powder (or a chip) into a stirring tank in a vacuum evaporation tank; b) vacuum evacuation to perform a vacuum deposition process; c) stirring the thermoplastic polymer powder (or chip); d) generating particles for formation of nano-sized inorganic particles using an evaporation source; And e) depositing inorganic particles on the surface of the thermoplastic polymer powder (or chip). [7] The method of claim 5, wherein the inorganic particles are formed by thermal evaporation, E-beam evaporation, DC sputtering, cathodic arc sputtering, DC magnetron sputtering, RF sputtering, ion beam sputtering, Molecular Beam Epitaxy, arc discharge process, or laser ablation ). ≪ / RTI > The method according to claim 5, wherein the set of operations vacuum is a vacuum vapor deposition 5 x 10 ^-4 to 5 x 10 ^-3 torr to a method for the highly dielectric film capacitor composition characterized. [2] The method according to claim 1, wherein the step 2) is a step of dispersing or dissolving the thermoplastic polymer adhered to the surface of the high-dielectric inorganic nanoparticles on a surface to prepare a solution, adding an additive, A method for producing a composition for a conductive film capacitor. delete delete

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